JP5434910B2 - Joining apparatus and joining method - Google Patents

Description

The present invention relates to a bonding apparatus and a bonding method. More specifically, the present invention relates to a bonding apparatus used when a substrate such as a wafer is bonded, and a substrate bonding method using the bonding apparatus. This application is related to the following Japanese application. For designated countries where incorporation by reference of documents is permitted, the contents described in the following application are incorporated into this application by reference and made a part of this application.
Japanese Patent Application No. 2008-083118 Application date March 27, 2008

  There is a stacked semiconductor device in which substrates each having an element and a circuit formed thereon are stacked (see Patent Document 1). A stacked semiconductor device has a high mounting density by forming a three-dimensional structure without increasing the mounting area. Further, it is said that the wiring between the stacked substrates is short, which contributes to an improvement in operation speed.

When the substrates are bonded together, a pair of substrates held in parallel with each other is pressed and pressed. For this reason, a bonding apparatus that holds and pressurizes a pair of substrates in parallel is used (see Patent Document 2).
JP 11-261000 A JP 2005-251972 A

  It is difficult to make the pair of substrates to be joined completely parallel, and pressurization may be started in a state where one substrate is slightly inclined. In such a case, the tilted substrate may oscillate in a pressurized state, and a positional shift may occur in a direction parallel to the surface of the substrate. When such a deviation is larger than the diameter of the bump formed on the bonding surface, the substrates cannot be electrically connected to each other, and a function as a laminated semiconductor device cannot be obtained. In addition, when the substrate is firmly held by the bonding apparatus, a stress that causes a positional shift may act on the substrate itself, and the substrate may be damaged.

  Therefore, in order to solve the above problems, as a first embodiment of the present invention, a first substrate holding member that holds and fixes one substrate of a pair of substrates, and a bonding surface of the other substrate of the pair of substrates Is held so as to face the bonding surface of one of the substrates, and the second substrate holding member is movable relative to the first substrate holding member so that the bonding surfaces of both substrates are bonded to each other; And one of the first substrate holding member and the second substrate holding member close to the bonding surface of the substrates held by the one substrate holding member. There is provided a joining device including a rocking portion that rocks around a rocking center.

  Further, as a second embodiment of the present invention, the step of holding one of the pair of substrates on the first substrate holding member, and the other substrate so that the bonding surface of the substrate faces the bonding surface of the one substrate Holding the second substrate holding member, swinging the second substrate holding member around a swing center close to the bonding surface of the other substrate, and making the pair of substrates parallel to each other; Displacing the second substrate holding member toward the first substrate holding member to bond the pair of substrates together; and coupling the first substrate holding member and the second substrate holding member to each other; Is provided. Thereby, it is possible to suppress the displacement in the horizontal direction when the wafer is swung with the center of rocking of the wafer aligned with the bonding surface of the wafer.

  Furthermore, as a third aspect of the present invention, the first substrate held by the first substrate holding unit is held by the fixed first table that holds the first substrate via the first substrate holding unit, and the second substrate holding unit. By displacing the second substrate table facing the first substrate holding unit and holding the second substrate table via the second substrate holding unit and displacing the second substrate table toward the first substrate table, One of the driving unit and the first substrate table and the second substrate table for joining the mutually facing joint surfaces of the first substrate and the second substrate and the first substrate or the second substrate around the swing center close to the joint surface. There is provided a joining device including a rocking portion that rocks the frame.

  The above summary of the invention does not enumerate all the features of the invention. Further, a sub-combination of these feature groups can be an invention.

  Hereinafter, the present invention will be described through embodiments of the invention. The embodiments described below do not limit the invention according to the claims. In addition, not all combinations of features described in the embodiments are essential for the solution of the invention.

  FIG. 1 is a cross-sectional view schematically showing the structure of the bonding apparatus 101. The joining apparatus 101 includes a drive unit 120, a lifting table 130, a fixed table 140, and a load cell 150 arranged inside the frame body 110.

  The frame 110 includes a top plate 112 and a bottom plate 116 that are parallel to each other and a plurality of columns 114 that couple the top plate 112 and the bottom plate 116. The top plate 112, the support column 114, and the bottom plate 116 are each formed of a highly rigid material, and no deformation occurs even when a reaction force of pressure applied to the wafers 162 and 164 in the later-described bonding is applied.

  The drive unit 120 is disposed on the bottom plate 116 inside the frame body 110. The drive unit 120 includes a cylinder 124 that is fixed to the upper surface of the bottom plate 116 and a piston 122 that is disposed inside the cylinder 124. The piston 122 is driven by a fluid circuit (not shown), a cam, a train wheel, and the like, and moves up and down in a direction perpendicular to the bottom plate 116 indicated by an arrow Z in the drawing. The piston 122 has a plane having a plurality of horizontal keys 126 at the upper end. The key 126 is formed in the depth direction with respect to the paper surface.

  A lifting table 130, which is an example of a second table, is attached to the upper end of the piston 122. The lifting table 130 includes a substrate holding member 131, a telescopic part 132, a spherical seat 134, an X stage 136 and a Y stage 138. The Y stage 138 has a key groove on the lower surface that fits the key 126 and is mounted on the upper surface of the piston 122. As a result, the Y stage 138 is displaced in the direction perpendicular to the paper surface at the top of the piston 122.

  The X stage 136 is mounted on the upper surface of the Y stage 138 and is fitted to the Y stage 138 by a fitting structure formed in parallel with the paper surface. As a result, the X stage 136 is displaced parallel to the paper surface. By combining the operations of the X stage 136 and the Y stage 138, an arbitrary displacement on the XY plane can be obtained. The spherical seat 134 has a lower surface complementary to a spherical recess formed on the upper surface of the X stage 136, and swings on the X stage 136.

  A substrate holding member 131 is mounted on the upper surface of the spherical seat 134 via an extendable part 132. The substrate holding member 131 has a holding surface 133 on the upper surface for holding the wafer holder 163 by electrostatic adsorption, negative pressure adsorption or the like. Thereby, the movement or dropping of the wafer holder 163 held by the substrate holding member 131 is suppressed.

  The wafer holder 163 held on the holding surface 133 sucks the wafer 164 with the bonding surface 168 facing upward. By handling the wafer 164 and the wafer holder 163 integrally, the operation of the wafer 164 is facilitated and damage to the wafer 164 is prevented.

  Note that the bonding surface 168 substantially corresponds to the upper surface of the wafer 164, but is a plane that is formed on the surface of the wafer 164 and includes top surfaces such as bumps and pads that protrude toward the opposite wafer 162 (described later). By coupling these bumps and the like to the bumps and the like of the wafer 162 facing each other, the circuit on the wafer 164 and the circuit on the wafer 162 are coupled. When bumps or the like are not formed on the wafers 162 and 164 and the surfaces of the wafers 162 and 164 where the circuits are formed are directly bonded to each other, the surfaces of the wafers 162 and 164 become the bonding surfaces 168.

  Further, when the substrate holding member 131 swings due to the swing of the spherical seat 134, the wafer holder 163 and the wafer 164 attracted to the substrate holding member 131 also swing together with the substrate holding member 131. That is, the spherical seat 134 and the concave portion of the X stage constitute a swinging portion that swings the substrate holding member 131.

  On the other hand, the fixed table 140 as an example of the first table includes a substrate holding member 141 and a plurality of suspension portions 144. The suspension part 144 is suspended from the lower surface of the top plate 112. The substrate holding member 141 is supported from below in the vicinity of the lower end of the suspension portion 144, and is disposed to face the lifting table 130.

  The substrate holding member 141 adsorbs and holds the wafer holder 161 on a holding surface 143 provided on the lower surface by electrostatic adsorption, negative pressure adsorption or the like. The wafer holder 161 holds the wafer 164 on the lower surface. As a result, the wafer 162 is held with the bonding surface 166 facing downward. Thus, the wafers 162 and 164 are held with the bonding surfaces 166 and 168 facing each other.

  The suspension portion 144 supports the substrate holding member 141 from below, but does not restrict upward movement. However, a plurality of load cells 150 are sandwiched between the substrate holding member 141 and the top plate 112. Thereby, the pressure applied to the wafer 162 held on the holding surface 143 of the substrate holding member 141 is detected, and the upward displacement of the substrate holding member 141 is restricted.

  The illustrated state corresponds to an initial state in the operation of the bonding apparatus 101. In this state, the piston 122 of the drive unit 120 is drawn into the cylinder 124, and the lifting table 130 is lowered. Therefore, there is a wide gap between the wafers 162 and 164 held on the lifting table 130 and the fixed table 140. A pair of wafers 162 and 164 to be bonded are loaded from the side with respect to the gap and held on the lift table 130 or the fixed table 140.

  Next, by operating the X stage 136 and the Y stage 138, the wafer 164 held on the lifting table 130 can be moved horizontally, and the center positions of the wafers 162 and 164 can be made to coincide with each other. Further, the wafer 164 can be swung by the spherical seat 134 to make the wafers 162 and 164 parallel to each other. In this way, the wafers 162 and 164 can be bonded by applying pressure by the driving unit 120 in a state of being aligned and parallel.

  Note that each of the wafer holders 161 and 163 includes coupling members 165 and 167. The coupling members 165 and 167 are, for example, permanent magnets whose polarities are adjusted so that they are attracted to each other. When the wafers 162 and 164 are bonded, they are coupled to each other so that the wafers 162 and 164 are sandwiched. Become. Thereby, the wafers 162 and 164 are transported to, for example, a facility for heating and pressurizing in a state where the bonded state is maintained.

  In the bonded wafers 162 and 164, signal terminals formed on the respective surfaces are connected to each other to form one circuit as a whole. In this way, a stacked semiconductor device can be manufactured. In the manufacturing process of the stacked semiconductor device, there may be a case where a step of bonding the wafers 162 and 164 with an adhesive or the like to make the bonding permanent is introduced.

  In the illustrated example, the center of the sphere including the spherical surface of the spherical seat 134, that is, the swing center C of the spherical seat 134 is the holding surface 133 of the substrate holding member 131 in a state where the substrate holding member 131 is disposed on the spherical seat 134. To a position away from the wafer 164 in the thickness direction. The value of the distance from the holding surface 133 of the substrate holding member 131 to the swing center C is larger than the value of the thickness dimension of the wafer 164 in the illustrated example.

  FIG. 2 is a diagram for explaining the operation of the position adjustment unit 201. That is, the bonding apparatus 101 includes a position adjustment unit 201 that brings the bonding surface 168 of the wafer 164 held by the substrate holding member 131 close to the swing center C.

  In the illustrated example, the position adjustment unit 201 includes an expansion / contraction unit 132 that is a substrate driving unit for displacing the wafer 164 held by the substrate holding member 131 in the thickness direction. The expansion / contraction part 132 is provided on the upper surface of the spherical seat 134 between the upper surface and the substrate holding member 131, and is in a direction perpendicular to the upper surface of the spherical seat 134 (in the direction indicated by the arrow L in the drawing). Stretch along.

  The substrate holding member 131 holding the wafer 164 is supported by the spherical seat 134 via the extendable part 132. When the wafer 164 is placed on the elevating table 130, first, the extendable portion 132 is operated to hold the substrate so that the swing center C of the spherical seat 134 is positioned on the bonding surface 168 corresponding to the upper surface of the wafer 164. The member 131 is moved. Accordingly, the swing center C can be easily arranged on the bonding surface 168 of the wafer 164 regardless of the thickness dimension of the wafer 164, and the wafer 164 is centered on the swing center C on the bonding surface 168. Can be swung.

  FIG. 3 is a diagram schematically showing the internal structure of the expansion / contraction unit 132 that operates as the position adjustment unit 201. The stretchable part 132 includes a support part 210, a bellows 216, and a driven part 218.

  The support part 210 is fixed to the upper surface of the spherical seat 134. In addition, a guide tube 213 stands upright substantially at the center inside the support portion 210. Further, the inside of the support portion 210 communicates with the pressure source 214 through the pressure-resistant pipe 211 that is airtightly connected. A control valve 212 is disposed in the middle of the pressure tube 211, and the pressure inside the support portion 210 can be changed by opening and closing the control valve 212.

  The driven portion 218 is fixed to the lower surface of the substrate holding member 131. Further, a guide shaft 215 extends downward from the lower surface of the inner center of the driven portion 218. The lower end side of the guide shaft 215 is inserted into the guide tube 213. As a result, the driven portion 218 can be displaced vertically with respect to the support portion 210 and the inclination is restricted.

  The support part 210 and the driven part 218 are hermetically coupled by an expandable / contractible bellows 216. As a result, when the pressure inside the support part 210 becomes high, the pressure acts on the driven part 218, and the substrate holding member 131 rises together with the driven part 218. Further, when the pressure inside the support part 210 becomes low, the driven part 218 descends.

  A braking portion 217 is disposed at the upper end of the guide cylinder 213. When the braking unit 217 is operated, the guide shaft 215 is gripped, and the displacement of the guide shaft 215 with respect to the guide tube 213 is stopped. Therefore, by operating the braking unit 217, the height of the driven unit 218 and the substrate holding member 131 can be held.

  In this way, the position of the wafer 164 held by the substrate holding member 131 is changed by moving the substrate holding member 131 up and down, so that the bonding surface 168 of the wafer 164 and the swing center C of the spherical seat 134 are changed. Can be matched. Further, the position of the wafer 164 in which the bonding surface 168 is aligned with the swing center C can be held by the braking unit 217. The operations of the control valve 212 and the braking unit 217 are controlled from a control unit provided outside.

  Needless to say, the structure of the stretchable part 132 is not limited to the above structure, and other drive mechanisms such as an air actuator, a piezoelectric element, and a ball screw formed of a hard material can be used. When using an air actuator, it is preferable to lubricate between the cylinder and the piston with an air bearing or the like. Thereby, generation | occurrence | production of abrasion powder can be prevented by avoiding sliding of the metal which produces abrasion powder.

  In addition, when a piezoelectric element is used, it is preferable to increase the amount of movement of the substrate holding member 131 using an insulator or the like because the expansion and contraction amount of the piezoelectric element itself is small. Further, when a ball screw is used, it is preferable to cover the sliding portion with a bellows type cover to prevent the sliding powder of the member from adhering to the wafer 164. Further, by using a stepping motor or the like as an actuator for rotationally driving the ball screw, the elevation amount of the wafer 164 can be precisely controlled from the outside.

  Regardless of which actuator is used, a control unit 219 for controlling a piezoelectric element, a stepping motor, and the like is provided, and by giving an appropriate target value to the control unit 219, the position of the wafer 164 held on the substrate holding member 131 can be adjusted. By changing, the bonding surface 168 of the wafer 164 and the swing center C of the spherical seat 134 can be matched. Since the position of the swing center C of the spherical seat 134, the initial position of the substrate holding member 131, and the like are known for each bonding apparatus 101, the thickness of the wafer 164 may be known in order to set an appropriate target value.

  When the thickness of the wafer 164 mounted on the substrate holding member 131 is known, or when the thickness of the wafer 164 is measured outside the bonding apparatus 101, the thickness of the wafer 164 is directly notified to the control unit 219. Just do it. Further, when the thickness of the wafer 164 depends on, for example, the number of stacked semiconductor substrates, the target value can be set in the control unit 219 by notifying the control unit 219 of the number of stacked layers. Furthermore, the thickness of the wafer 164 can be detected by the bonding apparatus 101 using a thickness detection unit or the like exemplified below.

  FIG. 4 is a diagram schematically showing the structure of the thickness detection unit 220 that detects the thickness of the wafer 164 mounted on the substrate holding member 131. The thickness detection unit 220 includes a downward-facing microscope 222 that is fixed to the top plate 112 of the bonding apparatus 101. The microscope 222 is also used for alignment of the wafers 162 and 164 in the horizontal direction (XY direction).

  The microscope 222 has an automatic focusing function and can know the distance D from its own position to the observation target. Therefore, for example, by observing the surface of the wafer 164 mounted on the wafer holder 163 on the substrate holding member 131, the distance D1 between the microscope 222 and the upper surface of the wafer 164 can be measured.

Next, after moving the wafer 164 by operating the X stage 136, the holding surface (upper surface) of the wafer holder 163 is observed by the microscope 222. Thereby, the distance D ₂ between the microscope 222 and the upper surface of the wafer 164 can be measured. By calculating the difference _DT between the distances D ₁ and D ₂ , the thickness of the wafer 164 can be calculated.

  When the substrate holding member 131 is tilted, the thickness of the wafer 164 may not be detected accurately. However, the accurate thickness of the wafer 164 can be detected by moving the observation position along the periphery of the wafer 164 and observing the distance D at a plurality of locations.

  Note that the thickness detection unit 220 using the microscope 222 can be provided outside the bonding apparatus 101. Further, even if a measuring device other than the microscope 222 is used, each distance from a specific reference position to the surface of the wafer 164 and the surface of the substrate holding member 131 can be measured. Specifically, each distance can be accurately measured by a laser length measuring device, a line sensor, image processing, or the like.

  When the thickness of the wafer 164 is detected as described above, the control unit 219 causes the substrate holding member so that the bonding surface of the wafer 164 having the thickness coincides with the swing center C of the spherical seat 134. 131 is moved up and down. If the lifting amount is controlled accurately, it is sufficient to indicate the operation to the actuator. However, the position of the surface of the wafer 164 is detected, and it is confirmed whether or not it is exactly coincident with the swing center C. It is also preferable.

  As the position detection unit that detects the position of the wafer 164, for example, a laser length measuring device, a line sensor, an imaging device, or the like can be used in addition to the microscope 222. That is, as already described, whether or not the bonding surface 168 of the wafer 164 is positioned at the known oscillation center C for each bonding apparatus 101 by measuring the distance from the microscope 222 or the like as the position detection unit. I understand. Further, the position of the wafer 164 can be detected by observing the wafer 164 from the horizontal direction with a microscope 222, an imaging device, or the like.

  Further, since the horizontal position of the swing center C of the spherical seat 134 is known for each bonding apparatus 101, the position adjustment of the wafer 164 can be confirmed by the following method. First, the swing center C is moved to a position vertically suspended from the microscope 222 or the like, and the distance to the bonding surface 168 of the wafer 164 is measured. Here, when the bonding surface 168 of the wafer 164 coincides with the swing center C, the measured distance does not change even if the wafer 164 is swung. However, if the bonding surface 168 and the swing center do not match, the measured value changes when the wafer 164 is swung.

  FIG. 5 is a diagram schematically showing the structure of another thickness detection unit 230. The thickness detection unit 230 is sandwiched between the substrate holding member 131 and the wafer holder 163 and has a support unit 232 and a load cell 234.

  The support portion 232 has a disk shape as a whole, and includes a plurality of accommodating portions 231 that are recessed from the upper surface. On the upper surface of the support portion 232, the region where the accommodating portion 231 is not formed has the same height and forms the pressing portion 233.

  A load cell 234 is accommodated in each of the accommodating portions 231. Further, the depth of the accommodating portion 231 is slightly smaller than the height of the load cell 234. As a result, the upper end of the load cell 234 slightly protrudes upward from above the support portion 232 to support the wafer holder 163.

  When the wafer holder 163 carrying the wafer 164 is placed on the thickness detection unit 230 as described above, the load cell 234 detects the received load and accurately detects the combined weight of the wafer holder 163 and the wafer 164. To do. Since the weight of the wafer holder 163 is known, the weight of the wafer 164 can be detected from the difference between the detected load and the weight of the wafer holder 163. Further, since the density of the wafer 164 is known, the thickness of the wafer 164 can be calculated from the detected weight.

  In the bonding apparatus 101, when the wafers 162 and 164 are pressurized and temporarily bonded, a large load is applied to the load cell 234. However, when the load increases, the strain body of the load cell 234 contracts and enters the housing portion 231. Thereby, thereafter, the pressing portion 233 of the support portion 232 pushes up the wafer holder 163. Therefore, the load cell 234 that receives an excessive load is prevented from being deteriorated.

  FIG. 6 is a diagram for explaining a phenomenon that occurs when the wafers 162 and 164 inclined on one side are brought into contact with each other and pressed. Here, as an example of the case where the wafer 164 tilted at the tilt angle θ is in contact with the horizontal wafer 162, the contact point M of the edge of the wafer 164 is generated with respect to the edge of the wafer 162. The positional deviation E will be described. In addition, assuming that the swing center C of the inclined wafer 164 is a distance Δh away from the bonding surface 168 of the wafer 164, the influence of the shift of the swing center C on the positional deviation E of the contact point M will be described.

The positional deviation E includes the positional deviation E ₁ that depends on the dimensions (radius D) of the wafers 162 and 164 and the inclination angle θ of the wafer 164, the distance Δh between the bonding surface 168 of the wafer 164 and the swing center C, and the inclination angle θ. and a positional deviation E ₂ of dependent, have the relationship shown in the equation below.
E = E ₁ + E ₂
E ₁ = D (1-cos θ)
E ₂ = Δh · sin θ

  FIG. 7 shows the result of measuring the positional deviation E in the horizontal direction generated on the wafers 162 and 164 by bonding while changing the tilt angle θ of one wafer 164. The wafers 162 and 164 were both 300 mm in diameter and 775 μm in thickness.

As the tilt angle θ of the wafer 164 increases, the positional deviations E ₁ and E _{2 that} are elements of the positional deviation E both increase. As a result, it can be seen that the overall positional deviation E also increases.

Further, the inclination angle θ is less than 0.6 ° range of the wafer 164, increases the influence of positional deviation E _2. On the other hand, when the tilt angle θ of the wafer 164 exceeds 0.6 °, the influence of the positional deviation E ₁ becomes large. From the measurement results, the area the inclination angle θ of the wafer 164 is small, by suppressing the positional deviation E _2, it is understood that effectively reduce the overall positional deviation E.

  FIG. 8 is a graph showing the result of measuring the positional deviation E of the wafers 162 and 164 that occurs when the inclined wafers 164 having different thicknesses are bonded to the horizontal wafer 162. The diameters of the wafers 162 and 164 are 300 mm, and the inclination angle θ of the wafer 164 is fixed to 1 °.

When the thickness of the wafer 164 is changed while the inclination angle θ is fixed, the swing center C of the wafer 164 is on the surface of the substrate holding member 131 of the lifting table 130, so the positional deviation E ₁ is the thickness of the wafer 164. It becomes constant regardless of the size. On the other hand, the positional deviation E ₂ depending on the distance Δh between the oscillation center C and the bonding surface 168 increases as the thickness of the wafer 164 increases. In other words, it can be seen that the overall positional deviation E can be effectively suppressed by making the swing center C close to the surface of the wafer 164 and reducing the interval Δh.

  In response to such a phenomenon, when the bonding apparatus 101 displaces the height of the substrate holding member 131 in the thickness direction of the wafer 164 by the operation of the expansion and contraction unit 132 and the wafer 164 having a different thickness is loaded. In this case, the position of the swing center C can be made coincident with the bonding surface 168 of the wafer 164. Accordingly, it can be understood that the positional deviation E can be suppressed by reducing the distance Δh from the oscillation center C.

  As described above, the step of fixing one of the pair of wafers 162 and 164 horizontally, the step of holding the other of the pair of wafers 162 and 164 so as to face the one wafer 162, and the other wafer 164 include the wafer. The pair of wafers 162 and 164 are swung around the swing center C close to the bonding surface 168 facing the pair 162, and the other wafer 164 is displaced toward the one wafer 162. Then, a bonding method including a step of bonding the pair of wafers 162 and 164 to each other is performed. As a result, bonding defects due to the positional deviation E of the wafers 162 and 164 are reduced.

  When performing this bonding method, after holding the pair of wafers 162 and 164, respectively, the other wafer 164 is displaced toward the one wafer 162 before the pair of wafers 162 and 164 are parallel to each other. When the other wafer 164 is brought into contact with the one wafer 162 and the other wafer 164 is brought into contact with the one wafer 162, the other wafer 164 can be separated from the one wafer 162.

  FIG. 9 is a diagram illustrating a state of the wafers 162 and 164 loaded in the bonding apparatus 101. Except for the portions described below, the position adjusting unit 201 and the structure of the bonding apparatus 101 including the position adjusting unit 201 have the same structure as the bonding apparatus 101 illustrated in FIGS. 1 and 2. Therefore, common elements are denoted by the same reference numerals, and redundant description is omitted.

  In the position adjusting unit 201, the swing center C is located near the upper surface of the substrate holding member 131. As described above, the distance between the holding surface 133 of the substrate holding member 131 and the bonding surface 168 of the wafer 164 can be changed by operating the expansion / contraction part 132, so that the wafers 164 having different thicknesses are mounted. Even in this case, the bonding surface 168 of the wafer 164 can be made to coincide with the oscillation center C.

  However, for example, when bonding a wafer thinned by polishing or the like to a normal wafer, or bonding an already laminated wafer to a single wafer, the thickness of the wafers 162 and 164 related to the bonding is large. to differ greatly. In such a case, when mounted on the substrate holding member 131, the movement amount of the expansion / contraction part 132 is reduced by placing the wafer 164 having the bonding surface 168 closer to the swing center C on the lifting table 130 side. it can.

  In the bonding apparatus 101 in which the swing center C is positioned in the vicinity of the substrate holding member 131 in the initial state, the wafer 162 having a large thickness, such as a laminated wafer, is stretched and held by the substrate holding member 141 on the fixed table 140 side. The raising / lowering amount of the part 132 becomes small, and the work throughput in the joining apparatus 101 can be improved.

  As described above, of the pair of substrates, the substrate holding member 131 may hold the substrate having a thickness such that the bonding surface 168 is closer to the swing center C when held by the substrate holding member 131. Thereby, the horizontal displacement of the substrate due to the swing is reduced. Further, when adjusting the bonding surface 168 of the substrate to the swing center C, the adjustment allowance is reduced.

  In addition, when the difference between the bonding surface 168 and the swing center C is approximately the same, it is preferable that the thinner one of the wafers 162 and 164 is held by the substrate holding member 131 of the lifting table 130. Thereby, the displacement in the horizontal direction of the bonding surface 168 that occurs when the substrate holding member 131 is swung is reduced, and the influence on the positional deviation E can be reduced.

  FIG. 10 is a view showing another form of the wafers 162 and 164 loaded in the bonding apparatus 101. The structure of the position adjustment unit 201 and the bonding apparatus 101 including the position adjustment unit 201 is the same as that shown in FIG. 8, and the following description shows different methods of using the same bonding apparatus 101.

  As shown in the figure, when a wafer 164 that is already laminated and has a large thickness and another wafer 162 that is further laminated thereon are laminated, the already-laminated wafer 164 is placed on the lower substrate holding member 131. The single-layer wafer 162 can be held by the upper substrate holding member 141.

  Thereby, it is possible to omit the work of inverting the stacked and heavy wafer 164 and holding it on the upper substrate holding member 141. In addition, it is possible to suppress the amount of damage that occurs when the multilayer wafer 164 falls from the substrate holding member 141 for some reason and is damaged.

  Up to this point, an example in which the substrate driving unit of the position adjusting unit 201 is the expansion / contraction unit 132 has been shown. Instead, if the wafer 164 held by the substrate holding member 131 can be displaced in the thickness direction, The substrate driving unit can be formed with a structure other than the stretchable unit 132.

  FIG. 11 is a cross-sectional view schematically showing the structure of the bonding apparatus 102 according to another embodiment. Except for the part described below, the structure of the bonding apparatus 102 is the same as that of the bonding apparatuses 101 and 102 shown in FIGS. Therefore, common elements are denoted by the same reference numerals, and redundant description is omitted.

  The joining device 102 includes a frame 110, a driving unit 120, a fixed table 140, and a load cell 150 having the same structure as the joining device 101. On the other hand, the lifting table 130 has a unique structure.

  In the bonding apparatus 102, the lifting table 130 includes a Y stage 138, an X stage 136, a spherical seat 134, and a substrate holding member 131 that are sequentially stacked on the top of the piston 122. However, the substrate holding member 131 is directly attached to the spherical seat 134, and the extendable portion 132 is omitted. In the example shown in FIG. 11, the position adjustment unit 202 includes a spacer 170 inserted between the wafer 164 and the substrate holding member 131 on the upper surface of the substrate holding member 131 instead of the expansion / contraction part 132.

  The spacer 170 has a planar dimension that is slightly larger than the wafer 164 and supports the entire lower surface of the wafer 164. In addition, the spacer 170 can be replaced, and the spacer 170 having a different thickness can be mounted in accordance with the thickness of the wafer 164 mounted on the substrate holding member 131. On the other hand, the swing center C of the spherical seat 134 is set to a position close to the fixed table 140 side, that is, a position away from the holding surface 133 corresponding to the upper surface of the substrate holding member 131.

  With such a structure, even when wafers 164 having different thicknesses are held on the substrate holding member 131, the swing center C of the spherical seat 134 can be set at the center of the wafer 164 by mounting the spacer 170 having an appropriate thickness. It can be matched on the joint surface 168. As described above, the position adjusting unit 202 is provided between the holding table 133 and the wafer 164 between the holding table 133 and the wafer 164 having the swing center C that is separated from the holding surface 133 of the substrate holding member 131 in the thickness direction of the wafer 164. It may also include a spacer 170 that is inserted to bring the bonding surface 168 of the wafer 164 close to the swing center C. Thereby, the position adjusting unit 202 can be formed with a simple structure.

  In the present embodiment, the example in which the bonding surface 168 of the wafer 164 held by the substrate holding member 131 and the swing center C are made to coincide with each other is shown, but the swing center C is displaced from the bonding surface 168 of the wafer 164. Can be set to a different position. In this case, for example, when the bonding surface 168 of the wafer 164 held by the substrate holding member 131 is used as a reference (0), the thickness dimension of the wafer 164 is measured from the bonding surface 168 to the opposite side of the substrate holding member 131 side. Between a position closer to the bonding surface 168 than a position away from the distance, and a position closer to the bonding surface 168 than a position away from the bonding surface 168 by the distance of the thickness dimension of the wafer 164 from the bonding surface 168 to the substrate holding member 131 side. Set the swing center C within the range. That is, assuming that the distance of the swing center C from the bonding surface 168 is Δh and the thickness dimension of the wafer 164 is d, the value of Δh can be in the range of −d <Δh <d. Therefore, in the present invention, “the swing center C is close to the bonding surface 168 of the wafer 164” not only means that the swing center C is located within the above-described range, but also the swing center C. Also coincides with the joint surface 168.

  In the present embodiment, an example in which the bonding apparatus 101 includes the position adjustment units 201 and 202 has been described. Instead, the bonding surface 168 of the wafer 164 held by the substrate holding member 131 and the substrate holding member 131 are used. When the distance from the upper surface of the wafer 165 is constant, the spherical seat 134 is designed so that the position adjusting units 201 and 202 are not required and the swing center C is located on the bonding surface 168 of the wafer 164. Can do.

  As mentioned above, although this invention was demonstrated using embodiment, the technical scope of this invention is not limited to the range as described in the said embodiment. In addition, it will be apparent to those skilled in the art that various modifications or improvements can be added to the above embodiment. Furthermore, it is apparent from the scope of the claims that the embodiments added with such changes or improvements can be included in the technical scope of the present invention.

It is sectional drawing which shows typically the structure of the joining apparatus 101 which concerns on one embodiment. 6 is a diagram for explaining the operation of the position adjustment unit 201. It is a figure which shows the internal structure of the expansion-contraction part 132 typically. It is a figure which shows the structure of the thickness detection part 220 typically. It is a figure which shows typically the other structure of the thickness detection part 220. FIG. It is a figure explaining the position shift which arises when wafers 162 and 164 are made to contact. 5 is a graph showing the relationship between the deviation of the swing center C and the positional deviation of the wafers 162 and 164. It is a graph which shows the relationship between the thickness of wafers 162 and 164, and position shift. FIG. 6 is a view showing wafers 162 and 164 loaded in the bonding apparatus 101. FIG. 6 is a view showing wafers 162 and 164 loaded in the bonding apparatus 101. 2 is a cross-sectional view schematically showing the structure of a bonding apparatus 102. FIG.

Explanation of symbols

101, 102 Joining device, 110 Frame body, 112 Top plate, 114 Support column, 116 Bottom plate, 120 Drive unit, 122 Piston, 124 Cylinder, 126 key, 130 Lifting table, 131, 141 Substrate holding member, 132 Extendable unit, 133, 143 Holding surface, 134 Spherical seat, 136 X stage, 138 Y stage, 140 Fixed table, 144 Suspension part, 150 Load cell, 161, 163 Wafer holder, 162, 164 Wafer, 165, 167 Bonding member, 166, 168 Bonding surface, 170 Spacer, 201, 202 Position adjustment unit, 210, 232 Support unit, 211 Pressure tube, 212 Control valve, 213 Guide cylinder, 214 Pressure source, 215 Guide shaft, 216 Bellows, 217 Braking unit, 218 Driven unit, 219 Control unit , 220, 2 30 Thickness detection unit, 222 microscope, 231 housing unit, 233 pressing unit, 234 load cell

Claims (32)

A joining apparatus for laminating and joining a first substrate and a second substrate,
A first substrate holding member having a holding surface for holding the first substrate;
A second substrate holding member for holding the second substrate with the bonding surface of the second substrate facing the bonding surface of the first substrate;
A first drive unit that moves the second substrate holding member in a direction in which the second substrate is brought into contact with the first substrate;
A second driving unit that moves the second substrate holding member along a plane orthogonal to a moving direction of the second substrate holding member by the first driving unit;
An oscillating part supported by a spherical concave part, having a lower surface complementary to the concave part and having a spherical seat for supporting and oscillating the second substrate holding member;
A position adjusting unit that adjusts the position of the swing center of the spherical seat according to the thickness of the second substrate ;
The first substrate holding member is disposed on the opposite side of the holding surface and detects the pressure applied to the first substrate when the first substrate and the second substrate are in contact with each other, and And a pressure detection unit that regulates movement of the second substrate holding member by the first driving unit.   The bonding apparatus according to claim 1, wherein the swinging section swings the second substrate holding member around a swing center close to a bonding surface of the second substrate.   3. The bonding according to claim 1, wherein the position adjusting unit brings the bonding surface of the second substrate held by the second substrate holding member close to the rocking center of the rocking unit. apparatus.   The joining apparatus according to any one of claims 1 to 3, wherein the position adjusting unit is disposed between the swinging unit and the second substrate holding member.   The center of swing is from the bonding surface to the side opposite to the second substrate holding member when the bonding surface of the second substrate held by the second substrate holding member is used as a reference. A position closer to the bonding surface than a position separated by a distance of the thickness dimension of the second substrate, and a distance of the thickness dimension of the second substrate from the bonding surface to the second substrate holding member side. The joining device according to any one of claims 1 to 4, wherein the joining device is set within a range between a position closer to the joining surface than a position.   The position adjusting unit displaces the second substrate holding member in the thickness direction of the second substrate held by the second substrate holding member, thereby causing the bonding surface of the second substrate to move. The bonding apparatus according to any one of claims 1 to 5, further comprising a substrate driving unit that is brought close to the swing center.   The position adjustment unit receives the thickness of the second substrate, and brings the joint surface of the second substrate held by the second substrate holding member close to the swing center. The joining device according to any one of claims 1 to 6.   The position adjusting unit receives the number of stacked layers of the second substrate, and brings the joint surface of the second substrate held by the second substrate holding member close to the swing center. Item 8. The joining device according to Item 7.   The thickness detection part which detects the thickness of the said 2nd board | substrate hold | maintained at the said 2nd board | substrate holding member, and inputs the value of the said thickness into the said position adjustment part is further provided with the thickness detection part. The joining apparatus according to any one of 6 to 6. The thickness detector is
An interval measuring unit for measuring an interval from a holding surface at which the second substrate holding member holds the second substrate to a surface of the second substrate held by the holding surface;
The bonding apparatus according to claim 9, further comprising: a thickness calculation unit that calculates a thickness of the second substrate held by the second substrate holding member from the interval measured by the interval measurement unit.   The bonding apparatus according to claim 10, wherein the interval measurement unit detects the interval at a plurality of locations of the second substrate holding member that holds the second substrate. The thickness detector is
A load measuring unit that measures a load applied to the second substrate holding member by the second substrate held by the second substrate holding member;
The bonding apparatus according to claim 9, further comprising: a thickness calculating unit that calculates a thickness of the second substrate held by the second substrate holding member from a load measured by the load measuring unit.   The bonding apparatus according to claim 3, further comprising a position detection unit that detects a relative position of the bonding surface of the second substrate held by the second substrate holding member with respect to the swing center. Wherein the position adjusting unit of the bonding surface of the second substrate being interdigitated between said holding surface and said second substrate from claim 1 comprising a spacer to be close to the swing center to claim 3 The joining apparatus as described in any one.   The bonding apparatus according to any one of claims 1 to 14, further comprising a coupling portion that couples the first substrate holding member and the second substrate holding member to each other. A joining method of laminating and joining a first substrate and a second substrate,
A first substrate holding step of holding the first substrate on a holding surface of a first substrate holding member;
A second substrate holding step in which the bonding surface of the second substrate is opposed to the bonding surface of the first substrate and held on the holding surface of the second substrate holding member;
The second substrate holding member is supported by a spherical concave portion, and has a lower surface that is complementary to the concave portion and has a spherical seat that supports and swings the second substrate holding member. A stage of holding
A position adjusting step of adjusting the position of the swing center according to the thickness of the second substrate by a position adjusting unit that adjusts the position of the swing center of the spherical seat ;
A second driving step of moving the second substrate holding member by a second driving unit along a plane orthogonal to a direction in which the second substrate is brought into contact with the first substrate;
A first driving step of moving the second substrate holding member by a first driving unit in a direction in which the second substrate is brought into contact with the first substrate;
The pressure applied to the first substrate when the first substrate and the second substrate are in contact with each other by the pressure detection unit disposed on the opposite side of the holding surface of the first substrate holding member. And a pressure detection stage that detects and restricts movement of the second substrate holding member by the first driving unit. The bonding method according to claim 16, further comprising a swinging step in which the swinging unit swings the second substrate holding member around a swing center positioned in the vicinity of the bonding surface of the second substrate.   The position adjusting step further includes a step of causing the bonding surface of the second substrate held by the second substrate holding member to approach the swing center of the swing portion by the position adjusting portion. Item 18. The joining method according to Item 16 or Item 17.   19. The position adjusting step includes a step of adjusting the position of the swing center by the position adjusting unit disposed between the swing unit and the second substrate holding member. The joining method according to any one of the above. In the position adjusting step, when the bonding surface of the second substrate held by the second substrate holding member is used as a reference, the bonding surface is moved from the bonding surface to the side opposite to the second substrate holding member. A position closer to the bonding surface than a position separated by a distance of the thickness dimension of the second substrate, and a distance of the thickness dimension of the second substrate from the bonding surface to the second substrate holding member side. The joining according to any one of claims 16 to 19, further comprising a step of setting the swing center by the position adjusting unit within a range between a position closer to the joining surface than a position. Method.   In the position adjusting step, the second substrate holding member is displaced by a substrate driving unit in the thickness direction of the second substrate held by the second substrate holding member, and the second substrate holding member is moved. 21. The joining method according to any one of claims 16 to 20, including a step of bringing the joining surface close to the swing center.   In the position adjusting step, the thickness of the second substrate is input, so that the position adjusting unit swings the bonding surface of the second substrate held by the second substrate holding member. The joining method according to any one of claims 16 to 21, further comprising a step of bringing the center into proximity.   In the position adjusting step, the position adjustment unit swings the joint surface of the second substrate held by the second substrate holding member by inputting the number of stacked layers of the second substrate. The bonding method according to claim 22, comprising a step of bringing the center close.   The position adjustment step includes a thickness detection step of detecting a thickness of the second substrate held by the second substrate holding member by a thickness detection unit, and a thickness detected by the thickness detection unit. The method according to claim 16, further comprising a step of inputting a value to the position adjustment unit. The thickness detection step includes
An interval measuring step in which the thickness detection unit measures an interval from the holding surface where the second substrate holding member holds the second substrate to the surface of the second substrate held on the holding surface; ,
25. A thickness calculating step of calculating a thickness of the second substrate held by the second substrate holding member from the interval measured by the thickness detecting unit in the interval measuring step. The joining method described in 1.   26. The joining method according to claim 25, wherein the interval measuring step includes a step of detecting the interval at a plurality of locations of the second substrate holding member that holds the second substrate. The thickness detection step includes
A load measuring step of measuring a load applied to the second substrate holding member by the second substrate held by the second substrate holding member;
25. The bonding method according to claim 24, further comprising a thickness calculating step of calculating a thickness of the second substrate held by the second substrate holding member from the load measured in the load measuring step.   The position adjusting step further includes a position detecting step of detecting a relative position of the bonding surface of the second substrate held by the second substrate holding member with respect to the swing center. Joining method. Wherein the position adjusting step, interdigitated spacers between said holding surface and the second substrate, the second claim of the joint surfaces of claims 16 including the step of proximity to the pivot center of the substrate 18 The joining method according to any one of the above.   30. The method according to claim 16, further comprising a step of coupling the first substrate holding member and the second substrate holding member with a coupling portion in a state where the first substrate and the second substrate are joined. The joining method according to any one of the above.   The second substrate holding step has a thickness in which the bonding surface is closer to the swing center of the swinging portion when held by the second substrate holding member among the pair of substrates to be bonded. The bonding method according to any one of claims 16 to 30, further comprising a step of holding an object on the second substrate holding member.   Prior to bonding the second substrate to the first substrate, contacting the second substrate with the first substrate; and the second substrate contacting the first substrate The bonding method according to any one of claims 16 to 31, further comprising a step of separating the substrate from the first substrate.

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