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JP5458604B2 - Sn alloy plating apparatus and its Sn component replenishment method - Google Patents
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JP5458604B2 - Sn alloy plating apparatus and its Sn component replenishment method - Google Patents

Sn alloy plating apparatus and its Sn component replenishment method Download PDF

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JP5458604B2
JP5458604B2 JP2009051195A JP2009051195A JP5458604B2 JP 5458604 B2 JP5458604 B2 JP 5458604B2 JP 2009051195 A JP2009051195 A JP 2009051195A JP 2009051195 A JP2009051195 A JP 2009051195A JP 5458604 B2 JP5458604 B2 JP 5458604B2
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JP2010202941A (en
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喜章 川上
昭裕 増田
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Mitsubishi Materials Corp
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Description

本発明は、被処理基板にSn合金のめっき膜を形成するめっき装置及びそのSn成分補給方法に関する。   The present invention relates to a plating apparatus for forming a Sn alloy plating film on a substrate to be processed, and a method for supplying Sn component thereof.

めっき装置において、めっき液中の金属成分の濃度を一定に維持するために、金属成分を補給することが必要となる。特許文献1〜3に開示の発明では、めっき液の成分の補給液(要素液)を補給タンクに溜めておき、めっき液の成分濃度の分析結果に基づいて、補給タンクから補給液をめっき液中に補給するようにしている。   In the plating apparatus, it is necessary to replenish the metal component in order to keep the concentration of the metal component in the plating solution constant. In the inventions disclosed in Patent Documents 1 to 3, a replenisher solution (element solution) of a component of the plating solution is stored in a replenisher tank, and the replenisher solution is supplied from the replenisher tank based on the analysis result of the component concentration of the plating solution I try to replenish it inside.

特開2003−183898号公報JP 2003-183898 A 特開2001−73200号公報JP 2001-73200 A 特開平6−264251号公報JP-A-6-264251

近年、はんだ付けが必要な電子部品へのめっきや、半導体ウェハ等へのはんだ突起電極(バンプ)の形成に広く用いられてきたPb−Sn合金めっき液の代替として、Sn−Agめっき液が用いられるようになってきている。
このSn−Agめっき液において、その必須成分を溶解させた錫塩溶液等の要素液を投入してSn2+を補給する方法では、大量の要素液が必要になるため、液量の管理が煩雑であり、多大なコストが掛かる。
In recent years, Sn-Ag plating solution is used as an alternative to Pb-Sn alloy plating solution which has been widely used for plating on electronic parts that require soldering and forming solder bump electrodes (bumps) on semiconductor wafers. It is getting to be.
In this Sn-Ag plating solution, the element solution such as a tin salt solution in which its essential components are dissolved is added to replenish Sn 2+ , so that a large amount of the element solution is required. It is cumbersome and expensive.

本発明の目的は、めっき液の管理が容易であって、かつSn合金のめっき液へのSn成分の補給を簡便な方法により低コストで行うことができるめっき装置及びそのSn成分補給方法を提供することにある。   SUMMARY OF THE INVENTION An object of the present invention is to provide a plating apparatus capable of easily managing a plating solution and replenishing a Sn alloy plating solution with a simple method at a low cost, and a Sn component replenishing method thereof. There is to do.

本発明のSn合金めっき装置は、めっき槽内に貯留したSn合金のめっき液に被処理基板を接触させた状態とし、該被処理基板と電極との間に通電して被処理基板にSn合金のめっき膜を形成するめっき装置において、前記めっき槽との間で循環されるめっき液を貯留するタンクと、該タンク内のめっき液をポンプで圧送しながら前記めっき槽に供給するめっき液供給手段とを有するとともに、前記めっき液供給手段の前記ポンプよりも下流位置に、流通するめっき液内に酸化第一錫の粉末を供給する補給手段を設けてなり、前記補給手段は、前記めっき液供給手段におけるめっき液供給管に並列に設けたバイパス管と、該バイパス管を経由するめっき液の流通を制御する制御手段と、前記バイパス管の途中に前記酸化第一錫の粉末を所定量供給する定量供給機構と、前記バイパス管内の流体を排出可能なドレン機構とを備えることを特徴とする。 In the Sn alloy plating apparatus of the present invention, the substrate to be processed is brought into contact with the plating solution of Sn alloy stored in the plating tank, and the Sn alloy is applied to the substrate to be processed by energization between the substrate to be processed and the electrode. in the plating apparatus for forming a plating film, the a tank for storing the plating solution is circulated between the plating tank, the plating supplies the pumping article al before Symbol plating tank and pump the plating solution in the tank which has a liquid supply means, to a downstream position than the pump of the plating solution supply means, be provided with a supply means for supplying the powder of the stannous oxide to the plating solution flowing, said feeding means, said A bypass pipe provided in parallel with the plating solution supply pipe in the plating solution supply means; a control means for controlling the flow of the plating solution passing through the bypass pipe; and the stannous oxide powder is placed in the middle of the bypass pipe. Quantitative A metering mechanism for feeding, characterized by comprising the said bypass tube fluid can be discharged a drain mechanism.

すなわち、酸化第一錫の粉末をめっき液に供給することによりSn合金成分の補給を行うのであり、従来のような大量の要素液の調製が不要で、その管理も容易になる。この場合、めっき液供給手段のポンプの下流位置に酸化第一錫の粉末を供給するようにしており、そのポンプによって圧送されるめっき液の流れの中に酸化第一錫粉末が直接供給されることになる。したがって、酸化第一錫がめっき液に速やかに溶解するとともに、攪拌のための特別な装置を付加することなくめっき液の流れに乗ってめっき槽内に短時間で分散され、均一に補給することができる。 That is, the Sn alloy component is replenished by supplying the stannous oxide powder to the plating solution, so that it is not necessary to prepare a large amount of elemental solution as in the prior art, and its management is facilitated. In this case, the stannous oxide powder is supplied to the downstream position of the pump of the plating solution supply means, and the stannous oxide powder is directly supplied into the flow of the plating solution fed by the pump. It will be. Therefore, stannous oxide dissolves quickly in the plating solution, and it is dispersed in the plating tank in a short time by riding on the flow of the plating solution without adding a special device for stirring, so that it can be replenished uniformly. Can do.

また、通常時はめっき液供給管を経由してめっき液を流通させ、バイパス管を空の状態にしておき、酸化第一錫の粉末を補給する際には、バイパス管内に定量供給機構から粉末を所定量供給した後、制御手段によってめっき液をバイパス管内に流通可能な状態とすると、ポンプで送られるめっき液がバイパス管内の粉末を押し流しながら流通し、そのときに酸化第一錫の粉末は速やかにめっき液に溶解してめっき槽に供給される。 In addition, normally, when the plating solution is circulated through the plating solution supply pipe, the bypass pipe is left empty, and the powder of stannous oxide is replenished, the powder is supplied from the quantitative supply mechanism into the bypass pipe. After supplying a predetermined amount, the control means makes it possible to circulate the plating solution into the bypass pipe, and the plating solution sent by the pump circulates while flowing the powder in the bypass pipe. At that time, the powder of stannous oxide is It quickly dissolves in the plating solution and is supplied to the plating tank.

そして、めっき液にSn合金成分を補給する方法は、前記めっき槽と前記タンクとの間でめっき液を循環させながら、前記ポンプの下流位置に前記酸化第一錫の粉末を供給することを特徴とする。
タンクとめっき槽との間のめっき液の循環によってめっき液を攪拌しながら粉末を補給することができる。
And the method of replenishing the Sn alloy component to the plating solution is characterized in that the stannous oxide powder is supplied to the downstream position of the pump while circulating the plating solution between the plating tank and the tank. And
Powder can be replenished while stirring the plating solution by circulating the plating solution between the tank and the plating tank.

本発明のめっき装置によれば、酸化第一錫の粉末をめっき液に供給することによりSn合金成分を補給するようにしており、従来のような大量の要素液の調製が不要で、その管理も容易になる。また、その場合、タンクからめっき槽に送られるめっき液の流れに直接粉末を供給しており、めっき液への攪拌のための特別な装置が不要で、低コストでの実施が可能になる。   According to the plating apparatus of the present invention, the Sn alloy component is replenished by supplying the stannous oxide powder to the plating solution. Will also be easier. Moreover, in that case, the powder is directly supplied to the flow of the plating solution sent from the tank to the plating tank, and a special device for stirring the plating solution is not necessary, so that it can be implemented at a low cost.

本発明に係るめっき装置の第1実施形態を示す一部を縦断面にした概略構成図である。BRIEF DESCRIPTION OF THE DRAWINGS It is the schematic block diagram which made the longitudinal cross-section part which shows 1st Embodiment of the plating apparatus which concerns on this invention. 図1のめっき装置における補給機構の概略構成図である。It is a schematic block diagram of the replenishment mechanism in the plating apparatus of FIG. 本発明に係るめっき装置の第2実施形態を示す一部を縦断面にした概略構成図である。It is the schematic block diagram which made the longitudinal cross-section part which shows 2nd Embodiment of the plating apparatus which concerns on this invention.

以下、本発明に係るめっき装置及びその補給方法の実施形態を図面を参照しながら説明する。
図1及び図2は本発明を噴流式のめっき装置に適用した第1実施形態を示しており、この実施形態のめっき装置100は、めっき液が貯留されるめっき槽1と、めっき槽1の外側に設けられた架台2の上端部に設けられてめっき槽1の上部開口に被処理基板Sとなるウェハを配置する基板支持部3と、めっき槽1の底部からめっき槽1上部の被処理基板Sに向けてめっき液を供給するめっき液供給手段4と、めっき槽1からめっき液をオーバーフローさせながら外部に排出するめっき液排出手段5と、めっき液に酸化第一錫の粉末を供給する補給手段6とを有している。
Hereinafter, embodiments of a plating apparatus and a replenishing method thereof according to the present invention will be described with reference to the drawings.
1 and 2 show a first embodiment in which the present invention is applied to a jet-type plating apparatus. A plating apparatus 100 according to this embodiment includes a plating tank 1 in which a plating solution is stored, and a plating tank 1. A substrate support 3 provided at the upper end of the gantry 2 provided on the outer side and disposing a wafer to be processed S in the upper opening of the plating tank 1; and the processing of the upper part of the plating tank 1 from the bottom of the plating tank 1 A plating solution supply means 4 for supplying a plating solution toward the substrate S, a plating solution discharge means 5 for discharging the plating solution from the plating tank 1 to the outside while overflowing, and supplying a powder of stannous oxide to the plating solution Supply means 6.

基板支持部3は、被処理基板Sに接触するカソード電極11が設けられ、被処理基板Sが外部の電源12に接続されるようになっているとともに、めっき槽1の上部開口からわずかに上昇した位置で被処理基板Sが支持されることにより、この上部開口からオーバーフローするめっき液の液面上に被処理基板Sの被めっき面を接触させた状態に保持できるようになっている。図1における符号13は被処理基板Sの上面に当接する錘である。
一方、めっき槽1の内部には、被処理基板Sの下方に間隔をおいてアノード電極14が設けられている。このアノード電極14は、例えばメッシュ状に形成された導電体であって、めっき槽1内部の電極支持部15に水平に取付けられている。この電極支持部15は、例えばめっき槽1の内周面に周方向に間隔をおいて複数個設けられている。
The substrate support unit 3 is provided with a cathode electrode 11 that is in contact with the substrate S to be processed, and the substrate S to be processed is connected to an external power source 12 and is slightly raised from the upper opening of the plating tank 1. The substrate to be processed S is supported at this position, so that the surface to be plated of the substrate to be processed S can be held in contact with the surface of the plating solution overflowing from the upper opening. Reference numeral 13 in FIG. 1 denotes a weight that contacts the upper surface of the substrate S to be processed.
On the other hand, an anode electrode 14 is provided inside the plating tank 1 with a space below the substrate S to be processed. The anode electrode 14 is a conductor formed in a mesh shape, for example, and is horizontally attached to the electrode support portion 15 in the plating tank 1. For example, a plurality of electrode support portions 15 are provided on the inner peripheral surface of the plating tank 1 at intervals in the circumferential direction.

めっき液供給手段4は、めっき槽1の底部の中心位置から垂直上方に向かってめっき液を噴出する噴出ノズル21と、該噴出ノズル21に対してめっき液を供給するめっき液供給部22とから構成されている。このめっき液供給部22は、めっき液を貯留するタンク23と、タンク23内のめっき液を噴出ノズル21に供給するためのめっき液供給管24と、該めっき液供給管24の途中に設けられたポンプ25とを備えている。そして、めっき液供給管24におけるポンプ25の下流位置に補給手段6が設けられている。   The plating solution supply means 4 includes an ejection nozzle 21 that ejects the plating solution vertically upward from the center position of the bottom of the plating tank 1, and a plating solution supply unit 22 that supplies the plating solution to the ejection nozzle 21. It is configured. The plating solution supply unit 22 is provided in the middle of the tank 23 for storing the plating solution, a plating solution supply pipe 24 for supplying the plating solution in the tank 23 to the ejection nozzle 21, and the plating solution supply pipe 24. The pump 25 is provided. A replenishing means 6 is provided at a position downstream of the pump 25 in the plating solution supply pipe 24.

すなわち、ポンプ25に接続されているめっき液供給管24に、図2に示すように、その途中から分岐して再びめっき液供給管24に至るバイパス管31が設けられ、そのバイパス管31の両端の分岐接続部に、流路をめっき液供給管24又はバイパス管31のいずれかに択一的に切り替え可能な切り替え弁(制御手段)32,33が配設されている。この場合、めっき液供給管24は、鉛直方向に沿って設けられており、バイパス管31もめっき液供給管24と平行な鉛直方向に沿って設けられる。そして、バイパス管31の途中に、バイパス管31内を上下に二分割するように開閉可能なシャッタ34が設けられており、そのシャッタ34よりも上方位置に区画される空間が粉末供給チャンバ35とされ、この粉末供給チャンバ35に酸化第一錫の粉末を所定量供給する定量供給機構36が接続されている。   That is, as shown in FIG. 2, the plating solution supply pipe 24 connected to the pump 25 is provided with a bypass pipe 31 that branches from the middle and reaches the plating solution supply pipe 24 again. Switching valves (control means) 32 and 33 that can selectively switch the flow path to either the plating solution supply pipe 24 or the bypass pipe 31 are disposed at the branch connection portion. In this case, the plating solution supply pipe 24 is provided along the vertical direction, and the bypass pipe 31 is also provided along the vertical direction parallel to the plating solution supply pipe 24. A shutter 34 that can be opened and closed is provided in the middle of the bypass pipe 31 so as to divide the bypass pipe 31 into two vertically, and a space defined above the shutter 34 is defined as a powder supply chamber 35. A fixed quantity supply mechanism 36 for supplying a predetermined amount of stannous oxide powder is connected to the powder supply chamber 35.

定量供給機構36は、粉末を収納して下部のフィーダー37から少量ずつ排出するホッパー38と、このホッパー38から排出された粉末を受け取り、計量して搬送する計量搬送機39と、計量搬送機39から搬送された粉末をバイパス管31の粉末供給チャンバ35内に移送する移送機40とから構成されている。
計量搬送機39は、コンベア41に計量器42を設けたものであり、ホッパー38から受け取った粉末を計量器42で計量した後、コンベア42によって搬送するようになっている。
移送機40は、図2の例では押し出し機によって構成されており、計量搬送機39から搬送される粉末をシリンダ43内で受け取り、ピストン44によって前方に押し出す構成である。この場合、シリンダ43の先端に傾斜したシュータ45が接続され、そのシュータ45がバイパス管31の粉末供給チャンバ35に接続されている。また、シリンダ43とシュータ45との間、及びシュータ45とチャンバ35との間には、それらの間を開閉するシャッタ46,47がそれぞれ設けられている。
The fixed amount supply mechanism 36 stores a powder and discharges it little by little from the lower feeder 37, a weighing transfer machine 39 that receives, measures and conveys the powder discharged from the hopper 38, and a weighing transfer machine 39. And a transfer machine 40 for transferring the powder conveyed from the inside of the powder into the powder supply chamber 35 of the bypass pipe 31.
The weighing and conveying machine 39 is provided with a weighing device 42 on the conveyor 41, and the powder received from the hopper 38 is measured by the weighing device 42 and then conveyed by the conveyor 42.
In the example of FIG. 2, the transfer device 40 is configured by an extruder, and receives the powder transported from the metering transport device 39 in the cylinder 43 and pushes it forward by the piston 44. In this case, an inclined shooter 45 is connected to the tip of the cylinder 43, and the shooter 45 is connected to the powder supply chamber 35 of the bypass pipe 31. Further, shutters 46 and 47 for opening and closing between the cylinder 43 and the shooter 45 and between the shooter 45 and the chamber 35 are provided, respectively.

また、この定量供給機構36には、タンク23内のめっき液をポンプ51によりサンプリングしてSn成分濃度を測定する分析器52と、分析器52の分析結果及び計量器42の計測結果に基づき算出される必要補充量の粉末をホッパー38から落下させるべくフィーダー37を制御する制御部53とが接続されている。
なお、バイパス管31の粉末供給チャンバ35にはドレン機構54が設けられている。このドレン機構54は、チャンバ35に接続されたドレン管55と、その流路を開閉する弁56とから構成される。
The quantitative supply mechanism 36 calculates based on the analyzer 52 that samples the plating solution in the tank 23 by the pump 51 and measures the Sn component concentration, the analysis result of the analyzer 52, and the measurement result of the measuring instrument 42. A control unit 53 that controls the feeder 37 is connected to drop the necessary replenishment amount of powder from the hopper 38.
A drain mechanism 54 is provided in the powder supply chamber 35 of the bypass pipe 31. The drain mechanism 54 includes a drain pipe 55 connected to the chamber 35 and a valve 56 that opens and closes the flow path.

一方、めっき液排出手段5は、基板支持部3によって支持された被処理基板Sとめっき槽1の上部開口との間に形成される液流出路61と、めっき槽1の回りを囲むように設けられた外槽62と、この外槽62の内部を液供給手段4のタンク23に接続する液回収管63とによって構成されており、めっき槽1内部のめっき液を液流出路61からオーバーフローさせて外槽62内に受け入れ、この外槽62に受け入れためっき液を液回収管63を経由して液供給手段4のタンク23に回収することができるようになっている。   On the other hand, the plating solution discharge means 5 surrounds the plating outflow path 61 formed between the substrate S to be processed supported by the substrate support unit 3 and the upper opening of the plating bath 1 and the plating bath 1. The outer tank 62 is provided and a liquid recovery pipe 63 that connects the inside of the outer tank 62 to the tank 23 of the liquid supply means 4. The plating solution in the plating tank 1 overflows from the liquid outflow path 61. The plating solution received in the outer tank 62 can be recovered in the tank 23 of the liquid supply means 4 via the liquid recovery pipe 63.

このように構成しためっき装置100において、カソード電極11及びアノード電極14に対して電源12から電流を供給しつつ、めっき液供給手段4から供給されためっき液を被処理基板Sの被めっき面に向けて噴射して接触させることによって、被処理基板Sの被めっき面に対してめっき処理を行う。基板支持部3に支持される被処理基板Sとなるウェハとしては、予めレジストパターンが形成されたシリコンウェハが使用され、該レジストパターン開口部のシリコンウェハ上にめっきが施される。   In the plating apparatus 100 configured as described above, the plating solution supplied from the plating solution supply means 4 is applied to the surface of the substrate S to be processed while supplying current from the power source 12 to the cathode electrode 11 and the anode electrode 14. By spraying and making contact, a plating process is performed on the plating surface of the substrate S to be processed. As a wafer to be processed substrate S supported by the substrate support unit 3, a silicon wafer on which a resist pattern is formed in advance is used, and plating is performed on the silicon wafer in the resist pattern opening.

また、めっき液としてはSn−Ag合金めっき液等が使用され、噴出ノズル21から噴出されためっき液は、図1の矢印で示すようにめっき槽1の中央部で上昇流となって上昇し、被処理基板Sの被めっき面の中央部に当たった後、被めっき面に沿って半径方向外方に広がり、めっき槽1内で対流しながら、一部ずつめっき槽1の上部開口の液排出路61からオーバーフローする。このめっき槽1からオーバーフローしためっき液は、外槽62から液回収管63を経由してタンク23に回収される。また、このタンク23内に貯留されているめっき液は、ポンプ25によりめっき液供給管24を介して噴出ノズル21からめっき槽1内に噴出させられる。   Moreover, Sn—Ag alloy plating solution or the like is used as the plating solution, and the plating solution ejected from the ejection nozzle 21 rises as an upward flow at the center of the plating tank 1 as shown by the arrow in FIG. After the contact with the central portion of the surface to be processed of the substrate S to be processed, the liquid spreads radially outward along the surface to be plated and convects in the plating tank 1 while the liquid in the upper opening of the plating tank 1 is partially Overflow from the discharge path 61. The plating solution overflowed from the plating tank 1 is recovered from the outer tank 62 to the tank 23 via the liquid recovery pipe 63. The plating solution stored in the tank 23 is ejected from the ejection nozzle 21 into the plating tank 1 through the plating solution supply pipe 24 by the pump 25.

このようにして、めっき槽1内のめっき液とタンク23内のめっき液とが循環されながら、めっき槽1内でのめっき処理に供される。また、タンク23内のめっき液は分析器52によりサンプリングされて成分濃度が分析され、そのSn成分濃度が低下した場合には、補給手段6から酸化第一錫の粉末が補給される。   In this way, the plating solution in the plating tank 1 and the plating solution in the tank 23 are circulated and are subjected to the plating treatment in the plating tank 1. Further, the plating solution in the tank 23 is sampled by the analyzer 52 and analyzed for the component concentration. When the Sn component concentration is lowered, the powder of stannous oxide is supplied from the supply means 6.

この酸化第一錫の補給方法について説明する。
めっき液供給管24と並列に設けられているバイパス管31は、通常は上下の切り替え弁32,33がめっき液をめっき液供給管24にのみ流通させるようにしており、バイパス管31のチャンバ35内部は空の状態となっている。また、粉末の補給に先立って、めっき槽1の基板支持部3にはガラス板等のダミー基板を支持しておく。
そして、分析器52の分析結果に基づいて制御部53において必要な粉末の補給量が算出され、その分の粉末がホッパー38からフィーダー37によって計量搬送機39に排出される。計量搬送機39では受け取った粉末が計量され、その計量結果と必要補給量とを制御部53で比較し、計量結果が必要補給量に一致するまでフィーダー37を駆動する。
計量搬送機39に受け取った粉末が必要補給量に達したら、コンベア41により粉末を移送機構40のシリンダ43内に投入し、そのシリンダ43の前方のシャッタ46を開放して粉末をシュータ45に移送する。
A method for supplying the stannous oxide will be described.
In the bypass pipe 31 provided in parallel with the plating solution supply pipe 24, the upper and lower switching valves 32, 33 normally allow the plating solution to flow only through the plating solution supply pipe 24, and the chamber 35 of the bypass pipe 31. The interior is empty. Prior to the replenishment of the powder, a dummy substrate such as a glass plate is supported on the substrate support portion 3 of the plating tank 1.
Based on the analysis result of the analyzer 52, the required amount of powder replenished is calculated in the control unit 53, and the corresponding amount of powder is discharged from the hopper 38 to the weighing and conveying machine 39 by the feeder 37. In the weighing and conveying machine 39, the received powder is weighed, the weighing result and the necessary replenishment amount are compared by the control unit 53, and the feeder 37 is driven until the weighing result matches the necessary replenishment amount.
When the powder received by the weighing and conveying machine 39 reaches the required replenishment amount, the conveyor 41 puts the powder into the cylinder 43 of the transfer mechanism 40 and opens the shutter 46 in front of the cylinder 43 to transfer the powder to the shooter 45. To do.

次いで、シュータ45とシリンダ43との間のシャッタ46を閉じた後、シュータ45の前方のシャッタ47を開放すると、シュータ45内の粉末がバイパス管31のチャンバ35内に落下する。そして、シュータ45の出口のシャッタ47を閉じた状態とし、チャンバ35下端、つまりチャンバ35の上流位置のシャッタ34を開放するとともに、両切り替え弁32,33を切り替えて、めっき液供給管24へのめっき液の流通を停止して、めっき液をバイパス管31に流通させる。この切り替え操作により、バイパス管31内に供給されていた粉末がめっき液に溶解されながら押し流され、噴出ノズル21からめっき槽1内に噴出される。
バイパス管31は、内部の粉末が押し流される短時間だけ開放状態としておけばよく、所定時間めっき液を流通させた後、切り替え弁32,33を切り替えて、めっき液供給管24にめっき液を流通させ、めっき槽1とタンク23との間で循環させる。
めっき液の流通をめっき液供給管24に切り替えた後は、バイパス管31内に残っためっき液はドレン機構54により排出され、次回の補給時のためにチャンバ35内を空の状態にしておく。
Next, after closing the shutter 46 between the shooter 45 and the cylinder 43, when the shutter 47 in front of the shooter 45 is opened, the powder in the shooter 45 falls into the chamber 35 of the bypass pipe 31. Then, the shutter 47 at the outlet of the shooter 45 is closed, the shutter 34 at the lower end of the chamber 35, that is, the upstream position of the chamber 35 is opened, and both the switching valves 32 and 33 are switched to The distribution of the plating solution is stopped and the plating solution is circulated through the bypass pipe 31. By this switching operation, the powder supplied into the bypass pipe 31 is pushed away while being dissolved in the plating solution, and ejected from the ejection nozzle 21 into the plating tank 1.
The bypass pipe 31 need only be opened for a short time during which the internal powder is swept away. After the plating solution is circulated for a predetermined time, the switching valves 32 and 33 are switched to distribute the plating solution to the plating solution supply pipe 24. And circulate between the plating tank 1 and the tank 23.
After switching the plating solution flow to the plating solution supply pipe 24, the plating solution remaining in the bypass pipe 31 is discharged by the drain mechanism 54, and the chamber 35 is left empty for the next replenishment. .

このようにして、ポンプ25によって圧送されてくるめっき液に粉末を供給して、そのめっき液をタンク23とめっき槽1との間で循環させることにより、粉末が速やかにめっき液に溶解され、かつ全体的に均等に分散させられる。したがって、その補給作業を短時間で実施することができる。また、配管(バイパス管31)内に粉末を供給するという簡便な方法であり、粉末として管理も容易である。また、攪拌のための手段としては、通常のめっき処理に使用される噴出ノズル21からの噴流及びタンク23とめっき槽1との間の循環を利用しており、特別の攪拌装置を設ける必要はなく、低コストで実施することができる。
なお、Sn−Agめっき液は、Sn2+が97〜99wt%、Ag+が1〜3wt%で、大部分がSnであるから、この粉末による補給方法は極めて効果的である。この酸化第一錫の粉末は酸性めっき液1リットルに対して例えば2〜3g使用され、200リットルの酸性めっき液では400〜600gとなる。そのめっき液で被処理基板を100〜200枚めっき処理することができる。
In this way, the powder is rapidly dissolved in the plating solution by supplying the powder to the plating solution fed by the pump 25 and circulating the plating solution between the tank 23 and the plating tank 1. And evenly distributed throughout. Therefore, the replenishment work can be performed in a short time. Moreover, it is a simple method of supplying powder in piping (bypass pipe 31), and management as powder is also easy. Moreover, as a means for stirring, the jet stream from the jet nozzle 21 used for normal plating processing and the circulation between the tank 23 and the plating tank 1 are used, and it is necessary to provide a special stirring device. And can be implemented at low cost.
Since the Sn—Ag plating solution has Sn 2+ of 97 to 99 wt%, Ag + of 1 to 3 wt%, and most of it is Sn, the replenishment method using this powder is extremely effective. The stannous oxide powder is used in an amount of, for example, 2 to 3 g per 1 liter of the acidic plating solution, and 400 to 600 g for a 200 liter acidic plating solution. 100 to 200 substrates can be plated with the plating solution.

供給する酸化第一錫粉末について説明を補足しておくと、平均粒径がD50値で10〜20μmの範囲であり、かつタップ密度が0.6〜1.2g/cmである酸化第一錫粉末を使用することが好ましい。また比表面積は7〜10m/gの範囲であることが好ましい。平均粒径及びタップ密度が上記範囲内の酸化第一錫粉末は、酸又は酸性めっき液への溶解性が極めて高い、即ち酸又は酸性めっき液に対して易溶性があるからである。具体的には、この酸化第一錫粉末は温度25℃のアルカンスルホン酸水溶液300mlに、酸化第一錫粉末20gを添加して攪拌したとき、5秒以内で溶解する溶解速度を有する。 To supplement the explanation of the supplied stannous oxide powder, the average particle diameter is in the range of 10 to 20 μm in D50 value, and the tap density is 0.6 to 1.2 g / cm 3 . It is preferable to use tin powder. Moreover, it is preferable that a specific surface area is the range of 7-10 m < 2 > / g. This is because a stannous oxide powder having an average particle diameter and a tap density within the above ranges has extremely high solubility in an acid or acidic plating solution, that is, is easily soluble in an acid or acidic plating solution. Specifically, this stannous oxide powder has a dissolution rate that dissolves within 5 seconds when 20 g of stannous oxide powder is added to 300 ml of an alkanesulfonic acid aqueous solution at a temperature of 25 ° C. and stirred.

なお、D50値で規定される平均粒径とは、粒子分布を測定したときに全粒子体積に対する累積粒子体積が50%となるときの粒径をいう。溶解性に優れる酸としては、酸性めっき液の成分であるメタンスルホン酸、エタンスルホン酸又は1−プロパンスルホン酸等のアルカンスルホン酸が挙げられる。また酸性めっき液としては、SnとSnより貴なる元素からなるSn合金のめっき液である、前述のSn−Ag合金めっき液の他、Sn−Cu合金めっき液、Sn−Ag−Cu合金めっき液又はAu−Sn合金めっき液等が挙げられる。   In addition, the average particle diameter prescribed | regulated by D50 value means a particle diameter when the accumulation particle volume with respect to all the particle volumes will be 50% when particle distribution is measured. Examples of the acid having excellent solubility include alkane sulfonic acids such as methane sulfonic acid, ethane sulfonic acid, and 1-propane sulfonic acid, which are components of the acidic plating solution. In addition to the Sn-Ag alloy plating solution described above, which is an Sn alloy plating solution composed of noble elements from Sn and Sn, the acidic plating solution includes Sn-Cu alloy plating solution and Sn-Ag-Cu alloy plating solution. Or Au-Sn alloy plating solution etc. are mentioned.

この酸化第一錫の粉末を製造する場合、まず、金属Sn粉末を酸に溶解することにより酸性水溶液を調製する。酸としては塩酸が好ましく、使用する金属Sn粉末はα線放出量が0.05cph/cm以下であることが好ましい。次に、この調製した酸性水溶液にアルカリ水溶液を添加し、攪拌して中和させ、水酸化第一錫のスラリーを調製する。このアルカリ水溶液として、アンモニア水、重炭酸アンモニウム溶液またはこれらの混合液が例示される。この水酸化第一錫のスラリーを調製する中和工程は、窒素ガス雰囲気中で行う。この中和反応は、反応液の液温が30〜50℃で行われ、pHが6〜8の範囲で行うことが好ましい。 When producing this stannous oxide powder, first, an aqueous acid solution is prepared by dissolving a metal Sn powder in an acid. As the acid, hydrochloric acid is preferable, and the metal Sn powder used preferably has an α-ray emission amount of 0.05 cph / cm 2 or less. Next, an alkaline aqueous solution is added to the prepared acidic aqueous solution, and the mixture is stirred and neutralized to prepare a stannous hydroxide slurry. Examples of the alkaline aqueous solution include aqueous ammonia, ammonium bicarbonate solution, or a mixture thereof. The neutralization step for preparing the stannous hydroxide slurry is performed in a nitrogen gas atmosphere. This neutralization reaction is preferably performed at a reaction solution temperature of 30 to 50 ° C. and a pH of 6 to 8.

次いで、調製したスラリーを加熱保持して、水酸化第一錫を熟成し脱水させ、酸化第一錫のスラリーを得る。この脱水工程は、窒素ガス雰囲気中で行う。加熱保持温度は80〜100℃が好ましい。更に、上記酸化第一錫のスラリーをろ過し、得られた酸化第一錫沈澱を水洗した後、真空乾燥により乾燥する。真空乾燥の際の温度は40〜100℃が好ましい。
以上の工程を経ることにより、平均粒径がD50値で10〜20μm、比表面積が7〜10m/g、タップ密度が0.6〜1.2g/cmである、酸又は酸性めっき液への溶解性が極めて高い酸化第一錫粉末が製造される。
Next, the prepared slurry is heated and held to age and dehydrate the stannous hydroxide to obtain a stannous oxide slurry. This dehydration step is performed in a nitrogen gas atmosphere. The heating and holding temperature is preferably 80 to 100 ° C. Further, the above stannous oxide slurry is filtered, and the resulting stannous oxide precipitate is washed with water and then dried by vacuum drying. The temperature during vacuum drying is preferably 40 to 100 ° C.
By passing through the above steps, an acid or acidic plating solution having an average particle diameter of 10 to 20 μm in D50 value, a specific surface area of 7 to 10 m 2 / g, and a tap density of 0.6 to 1.2 g / cm 3. A stannous oxide powder having a very high solubility in is produced.

なお、前記第1実施形態では、本発明を噴流式めっき装置に適用したが、図3に示すように浸漬式めっき装置に適用してもよい。この第2実施形態のめっき装置200は、めっき槽71内のめっき液中に被処理基板Sとアノード電極72とが浸漬状態に設けられ、外部の電源12に接続されている。そして、めっき槽71底部の噴出ノズル21から噴出されるめっき液をめっき槽71の上部からオーバーフローさせながら被処理基板Sとアノード電極72との間に通電してめっき処理を行うものである。また、めっき槽71との間で循環されるめっき液を溜めるタンク23が設けられ、このタンク23から噴出ノズル21にめっき液を供給するめっき液供給手段4のポンプ25よりも下流位置に、第1実施形態の場合と同様に補給機構6が設けられている。その他、第1実施形態と同様の構成要素には同一符号を付して説明を省略する。
このめっき装置200においても、めっき液としてSn−Ag合金めっき液等が使用され、そのめっき液をめっき槽71とタンク23との間で循環させながら酸化第一錫の粉末をめっき液供給手段4のポンプ25よりも下流位置に供給することにより、Sn成分の補給を行うことができる。
In the first embodiment, the present invention is applied to the jet plating apparatus, but may be applied to an immersion plating apparatus as shown in FIG. In the plating apparatus 200 according to the second embodiment, the substrate to be processed S and the anode electrode 72 are immersed in the plating solution in the plating tank 71 and connected to the external power source 12. Then, the plating solution ejected from the ejection nozzle 21 at the bottom of the plating tank 71 is caused to overflow from the upper part of the plating tank 71 to conduct current between the substrate S to be processed and the anode electrode 72 to perform the plating process. In addition, a tank 23 for storing a plating solution circulated between the plating tank 71 and a plating solution supply means 4 for supplying the plating solution from the tank 23 to the ejection nozzle 21 is provided at a position downstream of the pump 25. A replenishment mechanism 6 is provided as in the case of the first embodiment. In addition, the same code | symbol is attached | subjected to the component similar to 1st Embodiment, and description is abbreviate | omitted.
Also in this plating apparatus 200, an Sn—Ag alloy plating solution or the like is used as a plating solution, and the plating solution supply means 4 supplies the stannous oxide powder while circulating the plating solution between the plating tank 71 and the tank 23. By supplying to a position downstream of the pump 25, Sn component can be replenished.

以上、本発明の実施形態について図面を参照して詳述したが、具体的な構成はこの実施形態に限られるものではなく、本発明の要旨を逸脱しない範囲の設計変更等も含まれる。
例えば、実施形態では、めっき液供給管とバイパス管との分岐接続部に切り替え弁を設けて、粉末を補給する際に、めっき液供給管へのめっき液の流通を停止して、バイパス管にのみ流通させる構成としたが、制御弁を分岐接続部から離れたバイパス管の両端部のみに設けて、めっき液供給管にめっき液を流通させながら、バイパス管の制御弁を開閉することにより、めっき液の一部をバイパス管にも流通させ粉末を供給する構成としてもよい。本発明の制御手段は、実施形態のように、流路をいずれかに択一的に切り替える切り替え弁の他に、めっき液供給管を常時流通状態とし、バイパス管に必要に応じて流通させる構成のものも含むものとする。
また、粉末の補給量として粉末の重量を計量したが、その重量に相当する体積を計量することとしてもよい。
この粉末を補給した後にバイパス管内に残るめっき液は前述したようにドレン機構により排出されるが、このドレン機構により排出しためっき液をタンク23に回収してもよい。
さらに、めっき液をオーバーフローさせる液流出路をめっき槽の上部開口と被処理基板との間に形成するようにしたが、めっき槽の上端部に貫通孔や切欠きを設けて、これを液流出路とするようにしてもよい。また、第1実施形態においてアノード電極を支持する電極支持部もアノード電極と同様のメッシュ状に形成し、めっき槽の内周面全周に形成してもよい。
As mentioned above, although embodiment of this invention was explained in full detail with reference to drawings, the concrete structure is not restricted to this embodiment, The design change etc. of the range which does not deviate from the summary of this invention are included.
For example, in the embodiment, a switching valve is provided at the branch connection portion between the plating solution supply pipe and the bypass pipe, and when supplying powder, the flow of the plating solution to the plating solution supply pipe is stopped and the bypass pipe is connected. However, by providing a control valve only at both ends of the bypass pipe away from the branch connection portion, and opening and closing the control valve of the bypass pipe while circulating the plating solution to the plating solution supply pipe, It is good also as a structure which distribute | circulates a part of plating solution also to a bypass pipe and supplies powder. As in the embodiment, the control means of the present invention is configured so that the plating solution supply pipe is always in a circulation state and the bypass pipe is circulated as necessary, in addition to the switching valve that selectively switches the flow path to any one of them. Shall also be included.
Moreover, although the weight of the powder was measured as the replenishment amount of the powder, a volume corresponding to the weight may be measured.
The plating solution remaining in the bypass pipe after replenishing the powder is discharged by the drain mechanism as described above. However, the plating solution discharged by the drain mechanism may be collected in the tank 23.
In addition, a liquid outflow path for overflowing the plating solution was formed between the upper opening of the plating tank and the substrate to be processed, but a through-hole or notch was provided at the upper end of the plating tank, and this flowed out. A road may be used. In the first embodiment, the electrode support part for supporting the anode electrode may also be formed in the same mesh shape as the anode electrode, and formed on the entire inner peripheral surface of the plating tank.

1 めっき槽
3 基板支持部
4 めっき液供給手段
5 めっき液排出手段
6 補給手段
11 カソード電極
12 電源
14 アノード電極
15 電極支持部
21 噴出ノズル
22 液供給部
23 タンク
24 めっき液供給管
25 ポンプ
31 バイパス管
32,33 切り替え弁(制御手段)
34 シャッタ
35 粉末供給チャンバ
36 定量供給機構
37 フィーダー
38 ホッパー
39 計量搬送機
40 移送機
41 コンベア
42 計量器
43 シリンダ
44 ピストン
45 シュータ
46,47 シャッタ
51 ポンプ
52 分析器
53 制御部
54 ドレン機構
61 液流出路
62 外槽
63 液回収管
71 めっき槽
72 アノード電極
100 めっき装置
200 めっき装置
S 被処理基板
DESCRIPTION OF SYMBOLS 1 Plating tank 3 Substrate support part 4 Plating solution supply means 5 Plating solution discharge means 6 Supply means 11 Cathode electrode 12 Power supply 14 Anode electrode 15 Electrode support part 21 Jet nozzle 22 Liquid supply part 23 Tank 24 Plating liquid supply pipe 25 Pump 31 Bypass Pipe 32, 33 Switching valve (control means)
34 Shutter 35 Powder supply chamber 36 Fixed supply mechanism 37 Feeder 38 Hopper 39 Weighing and transporting machine 40 Transfer machine 41 Conveyor 42 Weighing instrument 43 Cylinder 44 Piston 45 Shuter 46, 47 Shutter 51 Pump 52 Analyzer 53 Control part 54 Drain mechanism 61 Liquid outflow Path 62 Outer tank 63 Liquid recovery pipe 71 Plating tank 72 Anode electrode 100 Plating apparatus 200 Plating apparatus S Substrate

Claims (2)

めっき槽内に貯留したSn合金のめっき液に被処理基板を接触させた状態とし、該被処理基板と電極との間に通電して被処理基板にSn合金のめっき膜を形成するめっき装置において、前記めっき槽との間で循環されるめっき液を貯留するタンクと、該タンク内のめっき液をポンプで圧送しながら前記めっき槽に供給するめっき液供給手段とを有するとともに、前記めっき液供給手段の前記ポンプよりも下流位置に、流通するめっき液内に酸化第一錫の粉末を供給する補給手段を設けてなり、
前記補給手段は、前記めっき液供給手段におけるめっき液供給管に並列に設けたバイパス管と、該バイパス管を経由するめっき液の流通を制御する制御手段と、前記バイパス管の途中に前記酸化第一錫の粉末を所定量供給する定量供給機構と、前記バイパス管内の流体を排出可能なドレン機構とを備えることを特徴とするSn合金めっき装置。
In a plating apparatus in which a substrate to be processed is brought into contact with a plating solution of Sn alloy stored in a plating tank, and an Sn alloy plating film is formed on the substrate to be processed by energization between the substrate to be processed and an electrode. And a tank for storing the plating solution circulated between the plating tank and a plating solution supply means for supplying the plating solution in the tank to the plating tank while pumping the plating solution. A replenishing means for supplying stannous oxide powder into the flowing plating solution is provided at a position downstream of the pump of the means ,
The replenishing means includes a bypass pipe provided in parallel to the plating solution supply pipe in the plating solution supply means, a control means for controlling the flow of the plating solution passing through the bypass pipe, and the oxidation solution in the middle of the bypass pipe. An Sn alloy plating apparatus , comprising: a fixed amount supply mechanism for supplying a predetermined amount of stannous powder; and a drain mechanism capable of discharging the fluid in the bypass pipe .
請求項1に記載のSn合金めっき装置にSn合金成分を補給する方法であって、
前記めっき槽と前記タンクとの間でめっき液を循環させながら、前記ポンプの下流位置に前記酸化第一錫の粉末を供給することを特徴とするSn合金めっき装置のSn成分補給方法。
A method for supplying Sn alloy components to the Sn alloy plating apparatus according to claim 1 , comprising:
An Sn component replenishing method for an Sn alloy plating apparatus, wherein the stannous oxide powder is supplied to a downstream position of the pump while circulating a plating solution between the plating tank and the tank.
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