JP5458927B2 - High frequency dielectric ceramic, method for manufacturing the same, and high frequency circuit element using the same - Google Patents

Description

  The present invention relates to a high frequency dielectric ceramic suitable as a member constituting a high frequency circuit element used in a high frequency region such as a microwave and a millimeter wave. Examples of such high-frequency dielectric ceramics are used in dielectric blocks, dielectric substrates, and various high-frequency circuit elements, which are components such as dielectric resonators, dielectric waveguides, and dielectric antennas. And a substrate and a supporting member. The high-frequency circuit element constitutes an electronic device such as a communication device in a high-frequency range, for example.

  The most basic dielectric resonator is a coaxial dielectric resonator. In this coaxial dielectric resonator, a through-hole is provided in a block made of dielectric ceramic, and only one surface (open surface) of the block in which the through-hole opens is left as it is. A conductor film is formed on the surface and the inner surface of the through hole.

  A microstrip line is the most basic dielectric waveguide that is a planar high-frequency circuit element. In this microstrip line, a strip conductor is provided on one of the front and back surfaces of the dielectric ceramic substrate, and a ground conductor film is provided on the other surface of the dielectric ceramic substrate.

  A dielectric resonator control type microwave transmitter can be configured using the above coaxial dielectric resonator and microstrip line. In this microwave oscillator, a coaxial dielectric resonator is attached to a dielectric ceramic substrate via a support member made of a dielectric ceramic, and an electromagnetic field leaking out of the coaxial dielectric resonator is utilized. The resonator is coupled to the microstrip line provided on the dielectric ceramic substrate.

In this type of high-frequency circuit, a resonance system with a high unloaded Q is configured by suppressing the electric field from leaking through the support member. Therefore, it is necessary to use a material for the support member that has a low relative dielectric constant and a small dielectric loss (tan δ) (that is, Qm × f is large: where Qm is a material loss coefficient). For this reason, conventionally, as a material of the support member, the relative dielectric constant εr is about 7, and Qm × f. Was forsterite (Mg ₂ SiO ₄ ) of about 150,000 GHz. In addition, as a material for the dielectric ceramic substrate, the relative permittivity εr is mainly about 10 and Qm × f. Alumina ceramics (Al ₂ O ₃ ) of 200000 GHz or higher have been employed (see, for example, Patent Document 1). However, in these materials, the temperature coefficient τ _f of the resonance frequency tends to be −30 to −70 ppm / ° C., so that the use of the high frequency circuit is limited. In addition, when these materials are mixed with impurities, there is a problem that the structure of the generated phase and the electrical characteristics greatly vary.

Further, a dielectric ceramic composition (see Non-Patent Document 1) in which titanium oxide (TiO ₂ ) is added to forsterite (Mg ₂ SiO ₄ ) has been proposed. However, in this dielectric ceramic composition, although the temperature coefficient τ _{f of the} resonance frequency is gradually shifted to the positive side with the addition of titanium oxide (TiO ₂ ), the temperature coefficient τ of the resonance frequency is added even when 30 wt% of titanium oxide is added. _{Since f} is a negative and large value of −62 ppm / ° C., a dielectric ceramic based on this is not practical.

On the other hand, Teflon (registered trademark) and alumina porcelain (Al ₂ O ₃ ) are generally used as materials for the dielectric ceramic substrate constituting the dielectric waveguide. However, since these materials tend to have a temperature coefficient τ _f of the resonance frequency of −30 to −70 ppm / ° C., the use of the high frequency circuit is limited.

Further, relative dielectric constant εr = 24, Qm × f. There is a development example (Non-patent Document 2) in which a dielectric having a temperature coefficient of τ _f = 0 ppm / ° C. is applied to a planar filter (Non-patent Document 2), but in order to meet the demand for further higher frequency in the future The relative dielectric constant εr is about 12 or less and Qm × f. Is 50000 GHz or more and the resonance frequency f. It is necessary that the absolute value of the temperature coefficient τ _f is 30 ppm / ° C. or less.

  Further, the higher the frequency region, the greater the influence of the skin effect. For example, when Ag is used as the conductor, the skin depth is 1.18 to 2.04 μm in the region of 1 to 3 GHz (non-patented). Reference 3).

JP-A-62-103904

Journal of the European Ceramic Society (Vol. 23 (2003), page 2575, see Table 3) A Ka-band Diplexer Using Planar TE Mode Dielectric Resonators with Plastic Package (Metamorphosis, No. 6, pp. 38-39 (2001)) Science chronology 2007 edition

  In view of the technical problems of the conventional high-frequency dielectric ceramics as described above, the present inventors have made the composition of the dielectric ceramics appropriate, and appropriately set the relative density of the dielectric ceramics. As a result, it has been found that the electrical characteristics in the high-frequency region are excellent and the manufacture is facilitated. And this invention is made | formed based on this knowledge.

  That is, an object of the present invention is to provide a high-frequency dielectric ceramic having excellent electrical characteristics in a high-frequency region and easy to manufacture, and a method for manufacturing the same.

  Another object of the present invention is to provide a high-frequency circuit element using such a high-frequency dielectric ceramic as a constituent member.

According to the present invention, the composition formula a (Sn, Ti) O ₂ —bMg ₂ SiO ₄ —cMgTi ₂ O ₅ —dMgSiO ₃ is achieved as one of the above objects.
A, b, c, and d (where a, b, c, and d are mol%) in the composition formula are 4 ≦ a ≦ 37, 34 ≦ b ≦ 92, and 2 ≦ c, respectively. ≦ 15 and 2 ≦ d ≦ 15, where a + b + c + d = 100, and an additive component composed of ZrO ₂ , the additive component with respect to 100 parts by weight of the principal component A high-frequency dielectric porcelain characterized in that 3.0 to 12.0 parts by weight is added.

Oite The present onset bright, the high-frequency dielectric ceramic is a relative density of 95% or more, a relative dielectric constant epsilon _r is from 7.5 to 12.0, Qm × f. The value is 50000 GHz or more and the resonance frequency f. Temperature coefficient tau _f of - 3 is 0~ + 3 0ppm / ℃.

In addition, according to the present invention, there is provided a method for manufacturing the above-described high frequency dielectric ceramic, which achieves any one of the above-described objects, and includes SnO ₂ , TiO ₂ and Mg ₂ SiO ₄ . Powder obtained by mixing 3.0 to 12.0 parts by weight of ZrO ₂ as a sintering aid with respect to 100 parts by weight of the starting material, using a pulverized powder after mixing and calcining a fixed amount There is provided a method for producing a dielectric ceramic for high frequency, characterized in that an organic binder is added to, molded and fired.

  In addition, according to the present invention, there is provided a high-frequency circuit element characterized by including a member made of the above-described high-frequency dielectric porcelain, in order to achieve any of the above objects.

ADVANTAGE OF THE INVENTION According to this invention, the dielectric ceramic for high frequency which is excellent in the electrical property in a high frequency area | region and is easy to manufacture is provided, especially, the dielectric constant (epsilon) r is 7.5-12.0, Qm * f. The value is sufficiently large, and the resonance frequency f. An absolute value of the temperature coefficient τ _f of the high frequency dielectric ceramic is 30 ppm / ° C. or less, and can be fired at a relatively low temperature. By using this high-frequency dielectric ceramic as a constituent member, a high-frequency circuit element having excellent characteristics, both good workability and ease of miniaturization is provided.

It is a typical sectional view of a dielectric resonator control type microwave transmitter which is an example of a high frequency circuit element. It is a typical perspective view of the coaxial dielectric resonator which is an example of a high frequency circuit element. It is a typical perspective view of the microstrip line which is an example of a high frequency circuit element. It is a typical top view which shows the pattern of the various microstrip line | wires which comprise a planar high frequency circuit element. FIG. 3 is an X-ray diffraction diagram of a high frequency dielectric ceramic according to the present invention.

The main component of the high frequency dielectric ceramic of the present invention is a composition formula a (Sn, Ti) O ₂ —bMg ₂ Si.
O4-cMgTi represented by ₂ O _{5 -dMgSiO 3,} a in the formula, b, c, and d (provided that, a, b, c, and d are mol%), respectively 4 ≦ a ≦ 37, 34 ≦ b
≦ 92, 2 ≦ c ≦ 15, and 2 ≦ d ≦ 15, where a + b + c + d = 10
0. The additive component of the high frequency dielectric ceramic of the present invention is made of ZrO ₂ . 3.0 to 12.0 parts by weight is added to 100 parts by weight of this additive component main component.

As shown in the X-ray diffraction diagram of FIG. 5, the high frequency dielectric ceramic of the present invention has tin titanate ((Sn, Ti) O ₂ ), forsterite (Mg ₂ SiO ₄ ), magnesium titanate ( MgTi ₂ O ₅ ) and steatite (MgSiO ₃ ) are the main production phases. As the (Sn, Ti) O ₂ , (Sn _0.8 Ti _0.2 ) O ₂ and (Sn _0.2 Ti _0.8 ) O ₂ are known. Among these, (Sn _0.8 Ti _0.2 ) O ₂ has characteristics that it is easier to sinter and more easily controls τ _f than (Sn _0.2 Ti _0.8 ) O ₂ . In FIG. 5, only the main production phase appears, and the additive component ZrO ₂ does not appear because the amount is small.

The high frequency dielectric ceramic of the present invention is Qm × f. Shows a high value of 50000 GHz or more, it is easy to provide a high frequency dielectric ceramic having a very low dielectric loss and a high frequency circuit element using the same. The high frequency dielectric ceramic according to the present invention has an absolute value of the temperature coefficient τ _f of the resonance frequency of 30 ppm / ° C. or less. It is easy to provide the high-frequency circuit element. Moreover, since the dielectric ceramic for high frequency according to the present invention has a relative dielectric constant εr of 7.5 to 12.0, it is possible to provide a high-frequency circuit element having both features of improved workability and downsizing. It becomes easy.

Furthermore, in the high frequency dielectric ceramic of the present invention, the additive component ZrO ₂ is added in an amount of 3.0 to 12.0 parts by weight with respect to 100 parts by weight of the main component and the relative density is 95% or more. Qm × f above. , Τ _f and ε r have good characteristics and are manufactured at a high yield without reacting with a base plate made of zirconia (ZrO ₂ ), alumina (Al ₂ O ₃ ), or the like that is contacted during firing during manufacturing. Accordingly, it is easy to provide a high-frequency circuit element. An example of such a high frequency circuit element is a coaxial dielectric resonator as shown in FIG. Here, a block in which a cylindrical through hole having a hole diameter of 3 mm is provided along the axial length direction in a block of a dielectric ceramic having an outer dimension of 10.6 mm × 10.6 mm × 12 mm (axial length), and the through hole is opened. Only one surface (open surface) of the dielectric ceramic is left as it is (ceramic surface), and a conductor film made of an Ag conductor is formed on the other surface of the dielectric ceramic and the inner surface of the through hole.

The reason for limiting the composition of the high frequency dielectric ceramic according to the present invention will be described. In the main component composition formula a (Sn, Ti) O ₂ -bMg ₂ SiO ₄ -cMgTi ₂ O ₅ -dMgSiO ₃ , if a is less than 4, the temperature coefficient τ _f of the resonance frequency becomes smaller than −30 ppm / ° C. ( That is, the absolute value of the temperature coefficient τ _f is greater than 30 ppm / ° C.), which is not preferable. When a exceeds 37, the relative dielectric constant εr becomes larger than 12.0, which is not preferable. A more preferable range of a is 18 ≦ a ≦ 36. Within this range, the absolute value of the temperature coefficient τ _f of the resonance frequency is 20 ppm / ° C. or less. If b is less than 34, the relative dielectric constant εr becomes larger than 12.0, which is not preferable. If b exceeds 92, the temperature coefficient τ _f of the resonance frequency becomes smaller than −30 ppm / ° C. (that is, the absolute value of the temperature coefficient τ _f becomes larger than 30 ppm / ° C.), which is not preferable. A more preferable range of b is 34 ≦ b ≦ 68. Within this range, the absolute value of the temperature coefficient τ _f of the resonance frequency is 30 ppm / ° C. or less. If c is less than 2, the temperature coefficient τ _f of the resonance frequency becomes smaller than −30 ppm / ° C. (that is, the absolute value of the temperature coefficient τ _f becomes larger than 30 ppm / ° C.), which is not preferable. When c exceeds 15, the relative dielectric constant εr becomes larger than 12.0, which is not preferable. If d is less than 2, the temperature coefficient τ _f of the resonance frequency becomes smaller than −30 ppm / ° C. (that is, the absolute value of the temperature coefficient τ _f becomes larger than 30 ppm / ° C.), which is not preferable. If d exceeds 15, the relative dielectric constant εr becomes larger than 12.0, which is not preferable.

As shown in the examples described later, the resonance frequency f is obtained by appropriately changing the molar ratios a, b, c, and d in the composition formula of the main component within the composition range in the high frequency dielectric ceramic of the present invention. Of being the absolute value of the temperature coefficient tau _f can be regarded a sufficiently large Qm value within a range close to zero is 30 ppm / ° C. or less i.e. tau _f, the relative dielectric constant εr in the desired value in the range of 7.5 to 12.0 It is possible to adjust.

Further, when the additive amount of the additive component ZrO ₂ with respect to 100 parts by weight of the main component is less than 3.0 parts by weight, it is difficult to make the relative density 95% or more by firing at a relatively low temperature of 1350 ° C. or less, particularly 1300 ° C. or less, Good Qm × f. Since it becomes difficult to obtain a value, it is not preferable. On the other hand, when the addition amount of the additive component ZrO ₂ with respect to 100 parts by weight of the main component exceeds 12.0 parts by weight, good Qm × f. It is difficult to obtain the value and εr, and the temperature coefficient τ _{f of the} resonance frequency becomes smaller than −30 ppm / ° C. (that is, the absolute value of the temperature coefficient τ _f becomes larger than 30 ppm / ° C.).

An embodiment of the method for manufacturing a high frequency dielectric ceramic according to the present invention is as follows. SnO ₂ , TiO ₂ , and Mg ₂ SiO ₄ are wet-mixed in predetermined amounts together with a solvent such as alcohol. Subsequently, after removing the solvent, it is calcined at 1000 to 1150 ° C. and pulverized to obtain a starting raw material powder.

A predetermined amount of ZrO ₂ is added to this starting material powder as a sintering aid, and wet mixed with a solvent such as alcohol. Subsequently, an organic binder such as polyvinyl alcohol is added to the powder obtained by removing the solvent, and after mixing, homogenizing, drying and crushing, the molding density is preferably 2.0 to 2.4 g / cm ³ , preferably Is pressure-molded so as to be 2.2 to 2.4 g / cm ³ . The obtained molded product is fired at 1200 to 1350 ° C. in an oxygen-containing gas atmosphere such as air, and contains the main component represented by the above composition formula and an additive component composed of ZrO ₂ , 3.0 to 12.0 parts by weight is added to 100 parts by weight of the main component, and a high frequency dielectric ceramic having a relative density of 95% or more can be obtained.

As shown in the examples described below, equimolar amounts of SnO ₂ and TiO ₂ can be used. In this case, in particular, the generated phase (Sn, Ti) O ₂ is preferably (Sn _0.8 Ti _0.2 ) O ₂ .

  The high-frequency dielectric ceramic thus obtained can be processed into an appropriate shape and size if necessary.

  The high frequency dielectric porcelain of the present invention includes a coaxial dielectric resonator as shown in FIG. 2 and a coaxial type using the same, for example, by forming a film or wiring made of a conductor such as silver or copper outside. It can be used to construct a high-frequency circuit element such as a dielectric filter. The plate-shaped high frequency dielectric ceramic of the present invention can be used as a dielectric wiring board for various high frequency circuits by forming a conductor wiring such as silver or copper.

In addition, a predetermined amount of ZrO ₂ is added to the starting material powder as a sintering aid, a low melting glass is added, and then mixed with a binder resin such as polyvinyl butyral, a plasticizer such as dibutyl phthalate, and an organic solvent such as toluene. Then, by forming a sheet by the doctor blade method, etc., laminating the obtained sheet and the conductor sheet and firing them integrally, a laminated high frequency circuit such as a laminated dielectric filter or a laminated dielectric wiring board An element can be obtained.

Incidentally, Sn is an element constituting the high-frequency dielectric ceramic of the present invention, Mg, Si, and Ti, as well as the of ZrO ₂ raw _material, in addition to _{SnO 2, TiO 2, Mg 2} SiO 4, ZrO 2, Oxides such as MgO and SiO ₂ can also be used, and nitrates, carbonates, hydroxides, chlorides, organometallic compounds and the like that become oxides upon firing can also be used.

  The high-frequency dielectric ceramic according to the present invention includes O, Sn, Mg, Si, and Ti, and Zr as constituent elements. For example, Ca, Ba, Ni, Fe, Cr, P, Na, etc. may be mixed as impurities.

  The high frequency dielectric ceramic according to the present invention can be used as a constituent member of various high frequency circuit elements as long as a low dielectric constant and a high Qm value are required. One example is a component in a dielectric resonator-controlled microwave transmitter as shown in FIG. In this microwave oscillator, a coaxial dielectric resonator 1 is attached to a dielectric ceramic substrate 3 via a support member 2 made of a dielectric ceramic, and an electromagnetic field H leaking out of the coaxial dielectric resonator 1 is used. Thus, the coaxial dielectric resonator 1 and the microstrip line strip conductor 4 provided on the dielectric ceramic substrate 3 are coupled. Reference numeral 5 denotes a metal case that exhibits an electromagnetic shielding function. In this microwave oscillator, the high frequency dielectric ceramic according to the present invention is used as a dielectric block of the coaxial dielectric resonator 1 as described with reference to FIG. 2 as a support member 2 and further as a dielectric ceramic substrate 3. Each can be used. FIG. 3 shows details of the microstrip line. In the microstrip line, the strip conductor 7 is provided on the surface of the dielectric ceramic substrate 6 (corresponding to the dielectric ceramic substrate 3), and the ground conductor film 8 is provided on the back surface of the dielectric ceramic substrate 6. Examples of the material of the strip conductor 7 include Pd, Cu, Au, and Ag.

  Other examples of the high-frequency circuit element in which the high-frequency dielectric ceramic of the present invention is used as a constituent member include planar high-frequency circuit elements as shown in FIGS. 4A to 4I, respectively. These planar high-frequency circuit elements 9 are provided with a strip conductor 7 on the surface of the dielectric ceramic substrate 6 and a ground conductor film on the back surface of the dielectric ceramic substrate 6 in the same manner as the microstrip line. Various patterns of conductive films are formed on the surface of the dielectric ceramic substrate 6 with the same material as that of the strip conductors 7, and the functions of the respective elements are exhibited by the conductive films. In FIG. 4, the element (a) is an interdigital capacitor, the element (b) is a spiral inductor, the element (c) is a branch circuit, and the element (d) is a directional coupler. The element (e) is a power distribution synthesizer, the element (f) is a low-pass filter, the element (g) is a band-pass filter, and the element (h) is a ring resonator. , (I) is a patch antenna.

  Hereinafter, the present invention will be further described with reference to Examples and Comparative Examples.

[Example 1]
Predetermined amounts were weighed so that SnO ₂ was 4.8 mol%, TiO ₂ was 4.8 mol%, and Mg ₂ SiO ₄ was 90.5 mol% (see Table 1), and these were mixed with ethanol and ZrO ₂ balls in a ball mill. And wet mixed for 12 hours. Then, after removing the solution, it was calcined at 1100 ° C. for 2 hours and pulverized. Using this calcined powder as a starting material, 3.0 parts by weight of ZrO ₂ was added to 100 parts by weight of calcined powder, and these were placed in a ball mill together with ethanol and ZrO ₂ balls and wet mixed for 12 hours. Thereafter, the solution was removed, and an appropriate amount of polyvinyl alcohol (PVA) solution was added and dried. Then, the pellet was formed into a pellet having a diameter of 20 mm and a thickness of 8.2 mm, and baked at 1250 ° C. for 2 hours in an air atmosphere.

The relative density of the thus obtained high frequency dielectric ceramic (see Table 1) was measured using the Archimedes method and found to be 96%.

Furthermore, after processing this high frequency dielectric ceramic to a size of 16.7 mm in diameter and 7.8 mm in thickness, Qm × f at a resonance frequency of 5.9 to 6.5 GHz is measured by a dielectric resonance method. The value, the relative dielectric constant εr, and the temperature coefficient τ _f of the resonance frequency were obtained. The results are shown in Table 1.

When X-ray diffraction analysis was performed on the obtained dielectric ceramic for high frequency, as shown in FIG. 5, the main production phase was tin titanate ((Sn _0.8 Ti _0.2 ) O ₂ ), forsterite. It was confirmed that it was composed of crystal phases of (Mg ₂ SiO ₄ ), magnesium titanate (MgTi ₂ O ₅ ), and steatite (MgSiO ₃ ). Further, when X-ray fluorescence analysis was performed on the obtained high frequency dielectric ceramic, the presence of ZrO ₂ was confirmed.

On the other hand, with respect to 100 parts by weight of the above starting material powder, 3.0 parts by weight of ZrO ₂ is added as a sintering aid, and 2.75 parts by weight of PVA, 1 part by weight of cellosol, and 1 part by weight of dispersant are added. A spray granule was prepared. Using this spray granule, the green density was molded to 2.3 g / cm ³ , and then fired under an air atmosphere condition of 1250 ° C. × 2 hours. A coaxial dielectric resonator as shown in FIG. 2 was fabricated using the high frequency dielectric ceramic thus obtained as a constituent member. The coaxial dielectric resonator had a shaft length of 12 mm, an outer shape (a length of one side of a substantially rectangular open surface) of 10.6 mm, and a hole diameter of 3 mm.

  The obtained coaxial dielectric resonator was evaluated for an unloaded Q value at a resonance frequency of 2 GHz. As a result, the unloaded Q value as a coaxial dielectric resonator was 1250. Thus, the coaxial dielectric resonator which has the outstanding high frequency characteristic was obtained by using the dielectric ceramic for high frequencies which concerns on this invention.

[Examples 2 to 18]
A predetermined amount of SnO ₂ , TiO ₂ , and Mg ₂ SiO ₄ was weighed so as to have a mixing ratio shown in Table 1, mixed under the same conditions as in Example 1, calcined, and pulverized. Using this calcined powder as a starting material, a predetermined amount of ZrO ₂ was weighed and mixed so as to have the blending amount shown in Table 1, and the binder was added and molded in the same manner as in Example 1, and then in an air atmosphere Were fired at a temperature as shown in Table 1 for 2 hours to produce a high frequency dielectric ceramic, and the characteristics were evaluated in the same manner as in Example 1. The results are shown in Table 1.

[Comparative Examples 1 to 12]
A predetermined amount of SnO ₂ , TiO ₂ , and Mg ₂ SiO ₄ was weighed so as to have a mixing ratio shown in Table 1, mixed under the same conditions as in Example 1, calcined, and pulverized. Using this calcined powder as a starting material, a predetermined amount of ZrO ₂ was weighed and mixed so as to have the blending amount shown in Table 2, and the binder was added and molded in the same manner as in Example 1, and in an air atmosphere A high frequency dielectric ceramic was produced by firing at a temperature as shown in Table 2 for 2 hours, and the characteristics were evaluated in the same manner as in Example 1. The results are shown in Table 2.

  As described above, since the dielectric ceramic for high frequency of the present invention has a low dielectric constant and a high Q value and excellent temperature characteristics, for example, a high frequency such as an integrated circuit used in a high frequency region such as a microwave and a millimeter wave is used. It is optimal as a component for circuit elements.

DESCRIPTION OF SYMBOLS 1 ... Coaxial dielectric resonator 2 ... Support member 3 ... Dielectric ceramic substrate 4 ... Strip conductor 5 ... Metal case H ... Electromagnetic field 6 ... Dielectric ceramic substrate 7 ... Strip conductor 8 ... Grounding conductor film 9 ... Plane high-frequency circuit

Claims (3)

Composition formula a (Sn, Ti) O ₂ —bMg ₂ SiO ₄ —cMgTi ₂ O ₅ —dMgSiO ₃
A, b, c, and d (where a, b, c, and d are mol%) in the composition formula are 4 ≦ a ≦ 37, 34 ≦ b ≦ 92, and 2 ≦ c, respectively. ≦ 15 and 2 ≦ d ≦ 15, where a + b + c + d = 100, and an additive component composed of ZrO ₂ , the additive component with respect to 100 parts by weight of the principal component 3.0 to 12.0 parts by weight , the relative density is 95% or more, the relative dielectric constant εr is 7.5 to 12.0, and Qm × f. The value is 50000 GHz or more and the resonance frequency f. High-frequency dielectric ceramic temperature coefficient tau _f of characterized in that it is a -30~ + 30ppm / ℃. A method for producing a dielectric ceramic for high frequency according to claim 1 , wherein a predetermined amount of SnO ₂ , TiO ₂ and Mg ₂ SiO ₄ is mixed and calcined and then pulverized as a starting material. For high frequency, characterized in that an organic binder is added to a powder obtained by adding 3.0 to 12.0 parts by weight of ZrO ₂ as a sintering aid with respect to 100 parts by weight of the raw material, followed by firing. A method of manufacturing a dielectric ceramic. A high-frequency circuit element comprising a member comprising the high-frequency dielectric ceramic according to claim 1 .

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