JP5459099B2 - Manufacturing method of semiconductor device - Google Patents

Description

  The present invention relates to a method of manufacturing a semiconductor device by anisotropically conductively connecting an electrode of a wiring board and a semiconductor chip.

  An anisotropic conductive film used for anisotropic conductive connection between an electrode of a wiring board and a bump of a semiconductor chip usually has an anisotropic conductive adhesive layer sandwiched between a base film and a cover film. It is a long film with a structure. In such an anisotropic conductive film, a wide long film is slit into a predetermined narrow width, and is wound and stored in a roll shape. For this reason, when the anisotropic conductive adhesive layer protrudes from between the base film and the cover film, the cover film cannot be peeled off smoothly, or the anisotropic conductive film with the cover film peeled off is temporarily attached to the wiring board. In this case, only the base film cannot be peeled off, and the anisotropic conductive adhesive layer is peeled off together, which makes it difficult to realize good temporary stickability. In addition, even when the temporary adhesion is successfully performed, the protruding portion of the end portion in the width direction of the anisotropic conductive adhesive layer is not pressed by the base film, so there is a problem that connection reliability may be lacking. It was.

Therefore, by using an anisotropic conductive adhesive layer sandwiched between the base film and the cover film having a viscosity of 10 ⁸ mPa · sec or less at 30 ° C., and slitting a wide anisotropic conductive film An anisotropic conductive film is proposed in which the edge in the width direction of the anisotropic conductive adhesive layer is retreated by 50 μm or more from the edge in the width direction between the base film and the cover film (Patent Document 1). . According to this anisotropic conductive film, since the anisotropic conductive adhesive layer does not protrude from the cover film or the base film, the cover film can be easily peeled off, and the anisotropy is peeled off from the cover film. When the conductive film is temporarily attached to the wiring board, the end of the anisotropic conductive adhesive layer is always covered with the base film, so that when the anisotropic conductive adhesive layer is pressed from above the base film with a heating bonder, Since it can be firmly pressed to the wiring substrate to the end, and the base film can be easily peeled off, it is possible to realize good temporary sticking properties and good connection reliability.

JP 2004-262161 A

  By the way, when performing anisotropic conductive connection using the anisotropic conductive film described in Patent Document 1, there is a single layer between the wiring substrate and the semiconductor chip that are to be anisotropically connected. There is only an anisotropic conductive adhesive layer. In this case, even if the thickness of the anisotropic conductive adhesive layer is reduced, as long as the conductive particles exist between the bumps of the semiconductor chip and the electrodes of the wiring board, there is a fatal inconvenience in the anisotropic conductive connection. Although there is not, the space between the semiconductor chip and the wiring board could not be sufficiently filled with the anisotropic conductive adhesive, and there was a problem that the adhesive strength between the semiconductor chip and the wiring board was insufficient. . On the other hand, if the layer thickness is too thick, sufficient adhesive strength can be obtained, but there is a problem that short-circuiting easily occurs.

  Therefore, for the anisotropic conductive film used to mount the semiconductor chip on the wiring board, the base film and the anisotropic conductive adhesive can function as an underfill agent without increasing the thickness of the anisotropic conductive adhesive layer. Attempts have been made to dispose an insulating adhesive layer between the layers. However, Patent Document 1 does not describe the size relationship in the width direction among the base film, the insulating adhesive layer, and the anisotropic conductive adhesive layer, and is different in that the insulating adhesive layer is laminated on the anisotropic conductive adhesive layer. For the isotropic conductive film, it is required to clarify the magnitude relationship necessary for realizing good temporary sticking property and connection reliability.

  An object of the present invention is to solve the above-mentioned problems of the prior art, in which an electrode of a wiring board and a bump of a semiconductor chip are formed on an insulating adhesive layer and an anisotropic conductive adhesive layer on a base film. When manufacturing semiconductor devices by conducting anisotropic conductive connection with laminated anisotropic conductive films, it gives good stickability to anisotropic conductive films and also gives good connection reliability to semiconductor devices. It is to be able to manufacture the semiconductor device as possible.

The inventor of the present invention relates to the width of the release film, the width of the insulation adhesive layer, and the anisotropy of the anisotropic conductive film formed by laminating an insulating adhesive layer and an anisotropic conductive adhesive layer on the release film. The inventors have found that the above object can be achieved by reducing the width of the conductive adhesive layer in this order, and have completed the present invention.

That is, the present invention is a method for manufacturing a semiconductor device in which an electrode of a wiring board and a bump of a semiconductor chip are anisotropically conductively connected,
An anisotropic conductive film in which an insulating adhesive layer and an anisotropic conductive adhesive layer are laminated in this order on a release film is placed on an electrode of a wiring board from the anisotropic conductive adhesive layer side, and a bonder The step of pressing and temporarily attaching with,
Peeling the release film from the anisotropic conductive film temporarily attached to the wiring board to expose the insulating adhesive layer, and wiring the bumps formed on the surface of the semiconductor chip from the exposed insulating adhesive layer Aligning with the electrode on the substrate, heating and pressing with a bonder from the back side of the semiconductor chip to make an anisotropic conductive connection, width of the release film of the anisotropic conductive film, insulation There is provided a manufacturing method characterized in that the mutual relationship between the width of the adhesive layer and the width of the anisotropic conductive adhesive layer satisfies the following formula (1), and a semiconductor device obtained by this manufacturing method.

  In the method for manufacturing a semiconductor device of the present invention, an insulating adhesive layer and an anisotropic conductive adhesive layer are provided on a release film as an anisotropic conductive film used for anisotropic conductive connection of a semiconductor chip to a wiring board. An anisotropic conductive film laminated in this order, wherein the width of the release film, the width of the insulating adhesive layer, and the width of the anisotropic conductive adhesive layer are reduced in this order. use. For this reason, favorable temporary sticking property can be given to an anisotropic conductive film, and also good connection reliability can be given to a semiconductor device.

FIG. 1 is an explanatory diagram of the production method of the present invention. FIG. 2 is an explanatory diagram of the production method of the present invention. FIG. 3 is a cross-sectional view of an anisotropic conductive film used in the production method of the present invention. FIG. 4 is a cross-sectional view of an anisotropic conductive film used in the production method of the present invention. FIG. 5 is a cross-sectional view of an anisotropic conductive film used in the production method of the present invention. FIG. 6 is an explanatory diagram of the production method of the present invention. FIG. 7 is an explanatory diagram of the production method of the present invention. FIG. 8 is an explanatory diagram of the production method of the present invention. FIG. 9 is a cross-sectional view of the semiconductor device of the present invention.

  The manufacturing method of the present invention is a manufacturing method of a semiconductor device in which an electrode of a wiring board and a bump of a semiconductor chip are anisotropically conductively connected, and includes a temporary bonding step, an insulating adhesive layer exposing step, and an anisotropic conductive layer. It has a connection process. These steps will be described in detail below.

<Temporary sticking process>
In the method of manufacturing a semiconductor device of the present invention, as shown in FIG. 1, first, an anisotropic conductive film in which an insulating adhesive layer 2 and an anisotropic conductive adhesive layer 3 are laminated in this order on a release film 1. 10 is placed on the electrode 21 of the wiring board 20 from the anisotropic conductive adhesive layer 3 side, and is temporarily attached by pressing with a bonder 30 while heating as necessary, as shown in FIG. The heating can be performed by the bonder 30 itself, or may be heated from a heating stage (not shown) that supports the wiring board 20.

  In the present invention, a known wiring board, electrode, and bonder can be applied as the wiring board 20, electrode 21, and bonder 30. For example, the wiring substrate 20 includes a glass substrate, a ceramic substrate, a polyimide flexible substrate, a glass epoxy substrate, and the electrode 21 includes a copper electrode, an aluminum electrode, a silver electrode, a gold electrode, an ITO electrode, and the like. These may be subjected to electrolysis or electroless nickel plating, solder plating, gold plating, or the like as required.

  The pressing surface of the bonder 30 may be a metal surface such as stainless steel, but is applied to the mounting method according to claim 1 of JP-A Nos. 2005-32952 and 2006-24554. An elastic body may be used like a thermocompression bonding head. When using an elastic body, it becomes possible to temporarily stick the anisotropic conductive adhesive layer of the anisotropic conductive film firmly to its end, and in the anisotropic conductive connection described later, The insulating adhesive protruding from between the semiconductor chip and the wiring board can also be heated and pressurized, and the connection reliability can be improved.

  As shown in FIG. 3, the anisotropic conductive film 10 used in the present invention is usually formed by laminating an insulating adhesive layer 2 and an anisotropic conductive adhesive layer 3 in this order on the release film 1, and is necessary for storage. Further, a cover film (not shown) may be laminated. The anisotropic conductive film 10 has the following formula (1) when the width of the release film 1 is W1, the width of the insulating adhesive layer 2 is W2, and the width of the anisotropic conductive adhesive layer 3 is W3. Satisfied. Thereby, when temporarily sticking an anisotropic conductive film, even the terminal of the anisotropic conductive contact bonding layer 3 can be firmly temporarily attached to a wiring board.

  Further, the center line L of each layer of the release film 1, the insulating adhesive layer 2 and the anisotropic conductive adhesive layer 3 is uniform and satisfactorily adhered to the wiring board as shown in FIG. This is preferable.

  Here, if the width ΔW1 of the end portion of the release film 1 that is not covered with the insulating adhesive layer 2 is too narrow, the end portion of the insulating adhesive layer tends not to be temporarily attached at the time of temporary application, and is too wide. Since it tends to be difficult to temporarily attach to a narrow frame panel, the thickness is preferably 50 to 3000 μm. Further, if the width ΔW2 of the end portion of the insulating adhesive layer 2 that is not covered with the anisotropic conductive adhesive layer 3 is too narrow, the adhesive force of the insulating adhesive layer tends to decrease, and if it is too wide, the width ΔW2 is accompanied. Then, when ΔW1 becomes wide, it tends to be difficult to temporarily stick to a narrow frame panel, so the thickness is preferably 10 to 1000 μm. When the thickness of the insulating adhesive layer 2 is t2 and the thickness of the anisotropic conductive adhesive layer 3 is t3, ΔW1, ΔW2, t2, and t3 satisfy the following expressions (2) and (3) at the same time. It is preferable.

  Moreover, it is preferable that the melt viscosity at 30 degreeC by the Japanese Industrial Standard (JIS K7244-10) of the insulating contact bonding layer 2 is lower than the melt viscosity at 30 degreeC of the anisotropic conductive contact bonding layer 3. FIG. Thereby, it can be made to contact | adhere firmly to the edge part of an insulating contact bonding layer at the time of temporary attachment, and the connection reliability after anisotropic conductive connection can be improved.

Under such a relationship, if the melt viscosity at 30 ° C. of the insulating adhesive layer 2 is too low, it becomes difficult to peel (heavy) the base film, and as a result, good temporary sticking tends to be difficult. Yes, if it is too high, the adhesive strength is reduced, and as a result, good temporary sticking tends to be difficult, and preferably 1.0 × 10 ^{3 to} 1.0 × 10 ⁵ mPa · s, more preferably 1.0 × 10 ^{3 to} 1.0 × 10 ⁴ mPa · s.

On the other hand, if the melt viscosity at 30 ° C. of the anisotropic conductive adhesive layer 3 is too low, it becomes difficult to peel off from the back surface of the cover film or the base film, and as a result, good temporary sticking tends to be difficult. If it is too high, the winding of the reel tends to occur easily. Therefore, it is preferably 1.0 × 10 ^{3 to} 1.0 × 10 ⁶ mPa · s, more preferably 1.0 × 10 ^{4 to} 1.0 × 10. ⁵ mPa · s.

In addition, if the difference between the melt viscosity at 30 ° C. of the insulating adhesive layer 2 and the melt viscosity at 30 ° C. of the anisotropic conductive adhesive layer 3 is too small, good temporary sticking tends to be difficult. If it is too large, there is a concern that the intended characteristics cannot be realized due to fluctuations in the winding conditions, so 3.0 to 1.0 × 10 ² mPa · s is preferable.

  FIG. 4 is an example of an anisotropic conductive film of another embodiment applicable to the present invention, in which the insulating adhesive layer 2 is anisotropic to the first insulating adhesive layer 2a disposed on the release film 1 side. It is the example comprised from the 2nd insulating contact bonding layer 2b arrange | positioned at the conductive conductive contact bonding layer 3 side. By making the insulating adhesive layer 2 multi-layered in this way, the effect that the end portion of the anisotropic conductive adhesive layer 3 is more fully temporarily attached than the case where the insulating adhesive layer 2 is a single layer. can get.

  In the multilayered anisotropic conductive film 10 of FIG. 4, the width of the release film 1 is W1, the width of the first insulating adhesive layer 2a is W2a, the width of the second insulating adhesive layer 2b is W2b, When the width of the isotropic conductive adhesive layer 3 is W3, the following expression (4) is satisfied. Thereby, when temporarily sticking an anisotropic conductive film, even the terminal of the anisotropic conductive contact bonding layer 3 can be firmly temporarily attached to a wiring board.

  4, the center line L of each layer of the release film 1, the first insulating adhesive layer 2a, the second insulating adhesive layer 2b, and the anisotropic conductive adhesive layer 3 is shown in FIG. It is preferable that they coincide with each other in that they can be temporarily and uniformly attached to the wiring board.

  Here, if the width ΔW1 of the end portion of the release film 1 that is not covered with the first insulating adhesive layer 2a is too narrow, the end portion of the insulating adhesive layer 2 tends not to be temporarily attached at the time of temporary attachment. If it is too wide, it tends to be difficult to temporarily stick to a narrow frame panel, so the thickness is preferably 50 to 3000 μm. Further, the width ΔW2a of the end portion of the first insulating adhesive layer 2a not covered with the second insulating adhesive layer 2b and the second insulating adhesive not covered with the anisotropic conductive adhesive layer 3 If the sum of the width ΔW2b of the end portion of the layer 2b is too narrow, the adhesive force of the insulating adhesive layer 2 tends to be reduced, and if it is too wide, if ΔW1 is increased accordingly, the narrow frame Since it tends to be difficult to temporarily stick to the panel, the thickness is preferably 10 to 1000 μm.

  In the case of the embodiment of FIG. 4, the melt viscosity at 30 ° C. of the first insulating adhesive layer 2a is lower than the melt viscosity at 30 ° C. of the second insulating adhesive layer 2b, and the second insulating adhesive layer It is preferable that the melt viscosity at 30 ° C. of the layer 2 b is lower than the melt viscosity at 30 ° C. of the anisotropic conductive adhesive layer 3. Thereby, it can be made to adhere | attach firmly to the edge part of an insulating contact bonding layer at the time of temporary attachment, and the connection reliability after anisotropic conductive connection can be improved.

Under such a relationship, if the melt viscosity at 30 ° C. of the first insulating adhesive layer 2a is too low, the base film becomes difficult to peel (heavy), and as a result, it is difficult to make a good temporary attachment. If it is too high, the adhesive force is reduced, and as a result, good temporary sticking tends to be difficult. Therefore, preferably 1.0 × 10 ^{3 to} 1.0 × 10 ⁵ mPa · s, More preferably, it is 1.0 * 10 < ³ > -1.0 * 10 < ⁴ > mPa * s.

If the melt viscosity at 30 ° C. of the second insulating adhesive layer 2b is too low, the difference from the melt viscosity at 30 ° C. of the first insulating adhesive layer 2a is reduced, resulting in a decrease in the adhesion effect. Good temporary sticking tends to be difficult, and if it is too high, the adhesive strength is lowered. As a result, good temporary sticking tends to be difficult, and preferably 1.0 × 10 ^{3 to} 1.0. × 10 ⁵ mPa · s, more preferably 1.0 × 10 ^{3 to} 1.0 × 10 ⁴ mPa · s.

On the other hand, if the melt viscosity at 30 ° C. of the anisotropic conductive adhesive layer 3 is too low, it tends to be difficult to peel off from the back surface of the cover film or the base film, and good temporary sticking tends to be difficult. Since there is a tendency that winding deviation occurs easily, 1.0 × 10 ^{3 to} 1.0 × 10 ⁶ mPa · s is preferable, and 1.0 × 10 ^{4 to} 1.0 × 10 ⁵ mPa · s is more preferable. s.

Further, if the difference between the melt viscosity at 30 ° C. of the first insulating adhesive layer 2a and the melt viscosity at 30 ° C. of the second insulating adhesive layer 2b is too small, it is difficult to perform good temporary attachment. If it is too large, there is a concern that the intended characteristics cannot be realized due to fluctuations in the winding conditions, so 3.0 to 1.0 × 10 ² mPa · s is preferable.

Further, if the difference between the melt viscosity at 30 ° C. of the second insulating adhesive layer 2b and the melt viscosity at 30 ° C. of the anisotropic conductive adhesive layer 3 is too small, it tends to be difficult to perform good temporary attachment. If it is too large, there is a concern that the intended characteristics cannot be realized due to fluctuations in the winding condition, so 3.0 to 1.0 × 10 ² mPa · s is preferable.

  FIG. 5 is an example of another embodiment of the anisotropic conductive film applicable to the present invention, in which the insulating adhesive layer 2 has a second insulating adhesive layer 2b and both ends thereof on the plane of the release film 1. This is an example having the first insulating adhesive layer 2a disposed on the surface. Thereby, since the 1st insulating adhesive layer 2a with low melt viscosity in 30 degreeC exists in both ends, the effect that favorable temporary sticking property is acquired is acquired. In the embodiment shown in FIG. 5, it is preferable that the second insulating adhesive layer 2b and the first insulating adhesive layer 2a are continuously integrated from the viewpoint of handleability. Need not be integrated.

  The anisotropic conductive film 10 of FIG. 5 has the width of the release film 1 as W1, the width of the first insulating adhesive layer 2a as W2a, the width of the second insulating adhesive layer 2b as W2b, and the anisotropic conductive film. When the width of the adhesive layer 3 is W3, the following formula (5) is satisfied. Thereby, when temporarily sticking an anisotropic conductive film, even the terminal of the anisotropic conductive contact bonding layer 3 can be firmly temporarily attached to a wiring board.

  In the case of the embodiment of FIG. 5, the wiring board is such that the center lines L of the respective layers of the release film 1, the second insulating adhesive layer 2b, and the anisotropic conductive adhesive layer 3 coincide as shown in FIG. Is preferable in that it can be temporarily and uniformly attached.

  Here, if the width ΔW1 of the end portion of the release film 1 that is not covered with the first insulating adhesive layer 2a and the second insulating adhesive layer 2b is too narrow, the end portion of the insulating adhesive layer at the time of temporary attachment However, since it will become difficult to temporarily stick to a panel with a narrow frame if it is too wide, it is preferably 50 to 3000 μm. Further, if the width ΔW2a of the end portion of the first insulating adhesive layer 2a not covered with the anisotropic conductive adhesive layer 3 is too narrow, the adhesive force of the insulating adhesive layer 2 tends to decrease, and the wide If it is too large, if ΔW1 becomes wide accompanying it, it tends to be difficult to temporarily stick to a narrow frame panel, so the thickness is preferably 10 to 1000 μm.

  In the case of the embodiment of FIG. 5, the melt viscosity at 30 ° C. of the first insulating adhesive layer 2a is lower than the melt viscosity at 30 ° C. of the second insulating adhesive layer 2b. It is preferable that the melt viscosity at 30 ° C. of the layer 2 b is lower than the melt viscosity at 30 ° C. of the anisotropic conductive adhesive layer 3. Thereby, it can adhere firmly to the edge part of an insulating contact bonding layer at the time of temporary attachment, and can improve the connection reliability after anisotropic conductive connection.

Under such a relationship, if the melt viscosity at 30 ° C. of the first insulating adhesive layer 2a is too low, the base film becomes difficult to peel (heavy), and as a result, good temporary attachment becomes difficult. If the adhesive strength is too high, the adhesive strength decreases, and as a result, good temporary sticking tends to be difficult. Therefore, preferably 1.0 × 10 ^{3 to} 1.0 × 10 ⁵ mPa · s, more preferably Is 1.0 × 10 ^{3 to} 1.0 × 10 ⁴ mPa · s.

If the melt viscosity at 30 ° C. of the second insulating adhesive layer 2b is too low, the base film tends to be exfoliated heavily, and if it is too high, the first insulating adhesive layer 2a cannot follow the first insulating adhesive layer 2a. Therefore, it is preferably 1.0 × 10 ^{3 to} 1.0 × 10 ⁶ mPa · s, more preferably 1.0 × 10 ^{3 to} 1.0 × 10 ⁴ mPa · s.

On the other hand, if the melt viscosity at 30 ° C. of the anisotropic conductive adhesive layer 3 is too low, it tends to be difficult to peel off from the back surface of the cover film or the base film, and good temporary sticking tends to be difficult. Since there is a tendency that winding deviation occurs easily, 1.0 × 10 ^{3 to} 1.0 × 10 ⁶ mPa · s is preferable, and 1.0 × 10 ^{4 to} 1.0 × 10 ⁵ mPa · s is more preferable. s.

In addition, when the difference between the melt viscosity at 30 ° C. of the first insulating adhesive layer 2a and the melt viscosity at 30 ° C. of the second insulating adhesive layer 2b is too small, good temporary sticking tends to be difficult. If it is too large, the second insulative adhesive layer 2b cannot follow the deformation of the first insulative adhesive layer 2a at the time of applying pressure temporarily, and as a result, good temporary attachment tends to be difficult. Therefore, it is preferably 3.0 to 1.0 × 10 ² mPa · s.

Further, if the difference between the melt viscosity at 30 ° C. of the second insulating adhesive layer 2b and the melt viscosity at 30 ° C. of the anisotropic conductive adhesive layer 3 is too small, it tends to be difficult to perform good temporary attachment. If it is too large, there is a concern that the intended characteristics cannot be realized due to fluctuations in the winding condition, so 3.0 to 1.0 × 10 ² mPa · s is preferable.

  As the release film 1, the insulating adhesive layers 2 (2a, 2b), and the anisotropic conductive adhesive layer 3 constituting the anisotropic conductive film 10 described above, known ones can be employed.

  For example, the release film 1 can include a polyethylene terephthalate film that has been subjected to a release treatment.

  Further, as the insulating adhesive layer 2 (2a, 2b), a liquid, paste-like or film-like thermosetting epoxy adhesive can be used. Such a thermosetting epoxy adhesive can be composed of a film-forming resin, a liquid epoxy resin (curing component), a curing agent, a silane coupling agent, an inorganic filler, and the like. Further, by adding conductive particles, an anisotropic conductive adhesive can be obtained, and the anisotropic conductive adhesive layer 3 can be formed therefrom. These components can be appropriately selected from known ones according to the characteristics required for the adhesive layer.

  Examples of the film-forming resin include phenoxy resin, epoxy resin, unsaturated polyester resin, saturated polyester resin, urethane resin, butadiene resin, polyimide resin, polyamide resin, polyolefin resin, and the like. be able to. Among these, a phenoxy resin can be preferably used from the viewpoints of film formability, processability, and connection reliability.

  Examples of liquid epoxy resins include bisphenol A type epoxy resins, bisphenol F type epoxy resins, novolac type epoxy resins, modified epoxy resins thereof, and alicyclic epoxy resins, and these two or more types should be used in combination. Can do.

  Examples of the curing agent include anionic curing agents such as polyamine and imidazole, cationic curing agents such as sulfonium salts, and latent curing agents such as phenolic curing agents.

  Examples of the silane coupling agent include an epoxy silane coupling agent and an acrylic silane coupling agent. These silane coupling agents are mainly alkoxysilane derivatives.

  The conductive particles can be appropriately selected from those conventionally used for anisotropic conductive adhesives. For example, metal particles such as nickel, cobalt, silver, copper, gold, and palladium, metal-coated resin particles, and the like can be used, and two or more of these can be used in combination.

  The inorganic filler can be appropriately selected from those conventionally used for anisotropic conductive adhesives. For example, silica, talc, titanium oxide, calcium carbonate, magnesium oxide and the like can be used. By adjusting the content of the inorganic filler, the fluidity of the anisotropic conductive adhesive can be controlled and the particle capture rate can be improved. A rubber component or the like can also be used as appropriate for the purpose of relaxing the stress of the bonded body.

  If necessary, the thermosetting epoxy adhesive may contain a filler, a softening agent, an accelerator, an anti-aging agent, a colorant (pigment, dye), an organic solvent, an ion catcher agent, and the like.

  In such an anisotropic conductive film 10, an insulating adhesive layer 2 was formed by applying a composition for forming an insulating adhesive layer such as a thermosetting epoxy adhesive to the release film 1 and drying it. Thereafter, the anisotropic conductive adhesive layer forming composition is further applied by a conventional method and dried to form the anisotropic conductive adhesive layer 3, and if necessary, a cover film (not shown) is laminated. be able to. In addition, an anisotropic conductive adhesive layer may be formed on the release film 1, and then an insulating adhesive layer may be formed, and a cover film (not shown) may be laminated. Also, the insulating adhesive layer 2 is formed on the release film 1, and the anisotropic conductive adhesive layer 3 is formed on the cover film or another release film separately from the insulating film 2 and laminated to form the insulating adhesive layer 2 And the anisotropic conductive adhesive layer 3 may be laminated.

<Insulating adhesive layer exposure process>
Next, as shown in FIG. 6, the release film 1 is peeled off from the anisotropic conductive film 10 temporarily attached to the wiring substrate 20 by a known method to expose the insulating adhesive layer 2.

<Anisotropic conductive connection process>
Next, as shown in FIG. 7, the bump 41 formed on the surface of the semiconductor chip 40 is aligned with the electrode 21 of the wiring substrate 20 from above the exposed insulating adhesive layer 2, and shown in FIG. Thus, anisotropic conductive connection is made by pressing the bonder 30 from the back side of the semiconductor chip 40 while heating. Thereby, the semiconductor device 100 shown in FIG. 9 is obtained. This semiconductor device is also one aspect of the present invention.

  As the semiconductor chip 40 and the bumps 41, known ones can be applied.

  In the method for manufacturing a semiconductor device of the present invention, an insulating adhesive layer and an anisotropic conductive adhesive layer are provided on a release film as an anisotropic conductive film used for anisotropic conductive connection of a semiconductor chip to a wiring board. An anisotropic conductive film laminated in this order, wherein the width of the release film, the width of the insulating adhesive layer, and the width of the anisotropic conductive adhesive layer are reduced in this order. use. For this reason, favorable temporary sticking property can be given to an anisotropic conductive film, and also good connection reliability can be given to a semiconductor device. Therefore, the present invention is useful for manufacturing a semiconductor device.

DESCRIPTION OF SYMBOLS 1 Release film 2 Insulating adhesive layer 2a 1st insulating adhesive layer 2b 2nd insulating adhesive layer 3 Anisotropic conductive adhesive layer 10 Anisotropic conductive film 20 Wiring board 21 Electrode 30 Bonder 40 Semiconductor chip 41 Bump 100 Semiconductor device

Claims (3)

A method of manufacturing a semiconductor device in which electrodes of a wiring board and bumps of a semiconductor chip are anisotropically conductively connected,
An anisotropic conductive film in which an insulating adhesive layer and an anisotropic conductive adhesive layer are laminated in this order on a release film is placed on an electrode of a wiring board from the anisotropic conductive adhesive layer side, and a bonder The step of pressing and temporarily attaching with,
Peeling the release film from the anisotropic conductive film temporarily attached to the wiring board to expose the insulating adhesive layer, and wiring the bumps formed on the surface of the semiconductor chip from the exposed insulating adhesive layer The length of the anisotropic conductive film having a long film structure has a step of performing anisotropic conductive connection by pressing with a bonder from the back side of the semiconductor chip while aligning with the electrode of the substrate and heating. When the direction orthogonal to the direction is defined as the width direction, the mutual relationship between the width of the release film of the anisotropic conductive film, the width of the insulating adhesive layer, and the width of the anisotropic conductive adhesive layer is expressed by the following formula (1 )

A manufacturing method characterized by satisfying   The insulating adhesive layer of the anisotropic conductive film is laminated with the first insulating adhesive layer disposed on the release film side and the second insulating adhesive layer disposed on the anisotropic conductive adhesive layer side. The melt viscosity at 30 ° C. of the first insulating adhesive layer is lower than the melt viscosity at 30 ° C. of the second insulating adhesive layer, and the width of the first insulating adhesive layer is the first The manufacturing method according to claim 1, wherein the size is equal to or larger than the width of the insulating adhesive layer.   The insulating adhesive layer of the anisotropic conductive film has a second insulating adhesive layer and first insulating adhesive layers disposed at both ends thereof on the release film plane, and has a first insulating property. The manufacturing method according to claim 1, wherein the melt viscosity at 30 ° C of the adhesive layer is lower than the melt viscosity at 30 ° C of the second insulating adhesive layer.

Images