JP5488541B2 - Semiconductor device - Google Patents

Description

  The present invention relates to a semiconductor in which a heat sink is arranged on both sides of each semiconductor element and the heat sinks in each semiconductor element are electrically connected via a conductive portion for the first semiconductor element and the second semiconductor element. Relates to the device.

  Conventionally, as this type of semiconductor device, for example, the one described in Patent Document 1 has been proposed. In this device, a first semiconductor element and a second semiconductor element are sandwiched between a pair of heat sinks.

  Specifically, a conductive first heat sink provided on one surface side of the first semiconductor element and electrically connected to the one surface side of the first semiconductor element, and the other surface side of the first semiconductor element And a conductive second heat sink that is electrically connected to the other surface side of the first semiconductor element.

  A conductive third heat sink is disposed on the same plane as the first heat sink, and a conductive fourth heat sink is disposed on the same plane as the second heat sink. A second semiconductor element is interposed between the third heat sink and the fourth heat sink, one surface side of the second semiconductor element is electrically connected to the third heat sink, and the other surface side is the first heat sink. 4 is electrically connected to the heat sink.

  Furthermore, a conductive portion extending from the second heat sink to the third heat sink side and electrically connecting the second heat sink and the third heat sink is provided, and the third heat sink and the leading end side of the conductive portion are made of solder or the like. It is electrically connected via a conductive adhesive, and the other surface side of the first semiconductor element and the one surface of the second semiconductor element are at the same potential via this conductive portion.

JP 2006-140217 A

  However, in the above-described conventional configuration, the second heat sink or the third heat sink is inclined due to variations in the height of the conductive portion and the conductive adhesive, or variations in the distance between the second heat sink and the third heat sink. There arises a problem that the parallelism of the two heat sinks is deteriorated or a poor contact between the conductive portion and the two heat sinks occurs.

  In particular, the connection by the conductive part is an electrical connection between the first and second semiconductor elements, and the unstable connection of the conductive part directly affects the electrical characteristics of the semiconductor device. It will be.

  The present invention has been made in view of the above-described problems. For the first semiconductor element and the second semiconductor element, heat sinks are disposed on both sides of each semiconductor element, and a conductive portion is provided between the heat sinks in each semiconductor element. An object of the present invention is to appropriately secure a connection by a conductive portion in a semiconductor device that is electrically connected via a conductor.

In order to achieve the above object, according to the first aspect of the present invention, the first semiconductor element (50) is provided on the one surface (51) side and the first semiconductor element (50) is electrically connected to the one surface (51) side. Conductive first heat sink (10) connected to the other surface (52) side of the first semiconductor element (50), and the other surface (52) of the first semiconductor element (50) A conductive second heat sink (20) electrically connected to the side, a conductive third heat sink (30) disposed on the same plane as the first heat sink (10), a second An electrically conductive fourth heat sink (40) disposed on the same plane as the heat sink (20), and interposed between the third heat sink (30) and the fourth heat sink (40), and one surface (61) Side is electrically connected to the third heat sink (30) and the other side (6 ) Side of the second semiconductor element (60) electrically connected to the fourth heat sink (40), and the second heat sink (20) extending from the second heat sink (20) to the third heat sink (30) side. ) And a third heat sink (30), and a conductive portion (90) for electrically connecting,
The third heat sink (30) and the leading end side of the conductive portion (90) are electrically connected via a conductive adhesive (80), and the first semiconductor element is connected via the conductive portion (90). In the semiconductor device in which the other surface (52) side of (50) and one surface (61) of the second semiconductor element (60) are at the same potential,
A concave portion (100) for storing the conductive adhesive (80) is provided at a connection portion of the third heat sink (30) with the conductive portion (90), and the conductive portion (90) is provided in the concave portion (100). The tip end side of each is inserted and connected by a conductive adhesive (80).

  According to this, the conductive adhesive (80) is stored in the recess (100) provided in the third heat sink (30), and the leading end side of the conductive part (90) is inserted therein, and the conductive adhesive (80 ), Even if the height of the conductive portion (90) and the distance between the second heat sink (20) and the third heat sink (30) vary, the depth of the concave portion (100) Variation is absorbed.

  As a result, the parallelism between the second heat sink (20) and the third heat sink (30) connected via the conductive portion (90) is ensured, and poor connection due to the conductive portion (90) is prevented. The Therefore, according to this invention, the connection by the electroconductive part (90) can be ensured appropriately.

  Here, in the invention according to claim 2, in the semiconductor device according to claim 1, the conductive portion (90) is a columnar shape extending between the second heat sink (20) and the third heat sink (30). The portion of the conductive portion (90) that is inserted into the recess (100) and contacts the conductive adhesive (80) has a bent shape (see FIG. 1 and the like). ).

  According to this, the contact area between the conductive portion (90) and the conductive adhesive (80) is increased by the amount of bending, and an improvement in connection strength can be expected.

  According to a third aspect of the present invention, in the semiconductor device according to the first or second aspect, the recess (100) is provided in the third heat sink (30) itself ( (See FIG. 1 etc.)

  Furthermore, in the invention according to claim 4, in the semiconductor device according to claim 3, the portion of the third heat sink (30) in which the recess (100) is formed is the third heat sink (30). The thin portion (30a) is thinner than other portions (see FIGS. 15 to 18 and the like).

  According to it, when forming a recessed part (100) in the 3rd heat sink (30) by press work, by forming the said recessed part (100) in the said thin part (30a), it is processing rather than processing thickly. Pressing is easy.

Furthermore, in the invention according to claim 5, in the semiconductor device according to claim 4, the first heat sink (10) and the second heat sink (20) have surfaces facing each other as inner surfaces (11, 21). The outer surface opposite to the inner surfaces (11, 21) is the heat radiating surface (12, 22), and the third heat sink (30) and the fourth heat sink (40) are surfaces facing each other. As the inner surface (31, 41), the outer surface opposite to the inner surface (31, 41) is the heat dissipation surface (32, 42).
The first, second, third and fourth heat sinks (10 to 40) are sealed with a mold resin (110), and the heat dissipation surfaces (12 to 42) of the respective heat sinks (10 to 40) are Exposed on the outer surface of the mold resin (110),
In the third heat sink (30), a portion closer to the first heat sink (10) than the heat radiation surface (32) of the third heat sink (30) is the thin portion (30a). The thin-walled portion (30a) of (30) is made thinner by denting the outer surface (32a) than the heat radiating surface (32) of the third heat sink (30), and the third heat sink (30 The outer surface (32a) of the thin-walled portion (30a) is sealed with the mold resin (110), and the concave portion (100) is formed on the inner surface (31a) of the thin-walled portion (30a) of the third heat sink (30). It is formed (refer FIGS. 15-17).

  Also in this case, the concave portion (100) can be easily formed by pressing. In this case, the third heat sink (30) is likely to bulge on the outer surface side due to the formation of the recess (100), but the outer surface (32a) side of the thin-walled portion (30a) is more than the heat radiating surface (32). Since it is recessed, it can suppress that the said bulge protrudes rather than the thermal radiation surface (32).

  Further, in this case, the heat radiation surfaces of the first heat sink (10) and the third heat sink (30) arranged on the same plane and sealed with the mold resin (110) via the mold resin (110). The distance between (12, 32), the so-called creepage distance (L), can be lengthened as the outer surface (32a) of the thin part (30a) of the third heat sink (30) is resin-sealed, This is preferable for ensuring electrical insulation reliability.

Furthermore, in the invention according to claim 6, in the semiconductor device according to claim 5, in the second heat sink (20), a fourth heat sink than the heat radiating surface (22) of the second heat sink (20). (40) The portion closer to the outer surface (22a) is a thin-walled portion (20a) made thinner by denting the heat dissipation surface (22) of the second heat sink (20),
The outer surface (22a) of the thin portion (20a) of the second heat sink (20) is sealed with the mold resin (110), and the conductive portion (90 from the thin portion (20a) of the second heat sink (20). ) Extends toward the third heat sink (30) (see FIGS. 16 and 17).

  According to this, the second heat sink (20) and the fourth heat sink (40) arranged on the same plane and sealed with the mold resin (110) mutually radiate heat through the mold resin (110). The distance between the surfaces (22, 42), the so-called creepage distance, can be increased as much as the outer surface (22a) of the thin portion (20a) of the second heat sink (20) is resin-sealed. This is preferable for ensuring reliable insulation reliability.

  In the semiconductor device according to claim 7, in the semiconductor device according to claim 4, the third heat sink (30) has an inner surface (31) as a surface facing the fourth heat sink (40). The outer surface opposite to (31) is the heat radiating surface (32), and the thin portion (30a) is thinned by denting a part of the inner surface (31) of the third heat sink (30). The concave portion (100) is formed on the inner surface (31a) of the thin-walled portion (30a) (see FIG. 18).

  According to this, both the thin portion (30a) and the concave portion (100) can be formed by processing from the inner surface (31) side of the third heat sink (30) by pressing or the like, and the processing becomes easy.

  According to an eighth aspect of the present invention, in the semiconductor device according to any one of the first to sixth aspects, a connection portion of the conductive portion (90) with the conductive adhesive (80), The heat sink (30) is located on the same plane as the connection portion with the second semiconductor element (60) (see FIG. 1 and the like).

  According to this, it is possible to inspect the connection portion of the conductive portion (90) in the third heat sink (30) at the same time as the connection portion of the second semiconductor element (60).

  According to a ninth aspect of the present invention, in the semiconductor device according to the first or second aspect, the recess (100) is a separate member (160) electrically connected to the third heat sink (30). (See FIG. 19).

  As described above, the recess (100) may be provided in the third heat sink (30) through the separate member (160).

  According to a tenth aspect of the present invention, in the semiconductor device according to any one of the first to ninth aspects, the conductive portion (90) includes the first, second, third, and fourth heat sinks (10). ˜40) (see FIG. 1 etc.).

  According to this, each heat sink (10-40) can ensure heat dissipation as being thick, and the conductive part (90) can be expected to be small in size because it is thin.

  According to an eleventh aspect of the present invention, in the semiconductor device according to any one of the first to tenth aspects, the conductive portion (90) includes the second heat sink (20) and the fourth heat sink (40). It is provided in the position which remove | deviated from between facing. (Refer FIGS. 20-24).

  According to this, since the interval between the heat sinks can be reduced by not positioning the conductive portion (90) between the opposing heat sinks between the semiconductor elements (50, 60), it is preferable for downsizing the physique of the semiconductor device. .

  According to a twelfth aspect of the present invention, in the semiconductor device according to any one of the first to eleventh aspects, the conductive portion (90) is formed integrally with the second heat sink (20). It is characterized (see FIG. 1 etc.).

  Thus, the conductive portion (90) may be formed integrally with the second heat sink (20), or may be a separate body as in the following claim 13.

  That is, according to a thirteenth aspect of the present invention, in the semiconductor device according to any one of the first to eleventh aspects, the conductive portion (90) is separate from the second heat sink (20). The second heat sink (20) is electrically connected via a conductive adhesive (80) (see FIGS. 8 and 9).

  According to a fourteenth aspect of the present invention, in the semiconductor device according to any one of the first to thirteenth aspects, the conductive portion (90) has an opening at the tip of the conductive portion (90) and a bottom portion. Is provided with an inner hole (91) positioned outside the recess (100), and the conductive adhesive (80) is filled in the entire inner hole (91) ( (See FIG. 13).

  According to this, even if the opening area and depth of the recess (100) are small, the contact area between the conductive part (90) and the conductive adhesive (80) can be efficiently earned. Specifically, the conductive adhesive (80) can be caused to enter the inner hole (91) of the conductive portion (90) by a capillary phenomenon or the like.

In the invention according to claim 15, the conductivity is provided on the one surface (51) side of the first semiconductor element (50) and is electrically connected to the one surface (51) side of the first semiconductor element (50). The first heat sink (10) and the other surface (52) side of the first semiconductor element (50) are electrically connected to the other surface (52) side of the first semiconductor element (50). The conductive second heat sink (20), the conductive third heat sink (30) arranged on the same plane as the first heat sink (10), and the same plane as the second heat sink (20) The conductive fourth heat sink (40) disposed above, the third heat sink (30), and the fourth heat sink (40) are interposed, and one surface (61) side is the third heat sink (30 ) And the other surface (62) side is the fourth heat shield. A second semiconductor element (60) electrically connected to the main body (40), and extending from the second heat sink (20) to the third heat sink (30) side, the second heat sink (20) and the third heat sink (20) A conductive portion (90) for electrically connecting the heat sink (30),
The third heat sink (30) and the leading end side of the conductive portion (90) are electrically connected via a conductive adhesive (80), and the first semiconductor element is connected via the conductive portion (90). In the semiconductor device in which the other surface (52) side of (50) and one surface (61) of the second semiconductor element (60) are at the same potential,
The conductive portion (90) is a separate body from the second heat sink (20), and the second heat sink (20) is provided with a hole (25), and this hole (25). And the conductive portion (90) and the second heat sink (20) are electrically connected to each other through the conductive adhesive (80) in the hole (25). They are connected (see FIGS. 26 and 27).

  According to this, the conductive adhesive (80) is provided in the hole (25) provided in the second heat sink (20), and the base side of the conductive part (90) is inserted therein, and the conductive adhesive (80 ), Even if the height of the conductive portion (90) and the distance between the second heat sink (20) and the third heat sink (30) vary, the depth of the hole (91) is increased. This variation is absorbed.

  As a result, the parallelism between the second heat sink (20) and the third heat sink (30) connected via the conductive portion (90) is ensured, and poor connection due to the conductive portion (90) is prevented. The Therefore, according to this invention, the connection by the electroconductive part (90) can be ensured appropriately.

  In addition, the code | symbol in the bracket | parenthesis of each means described in the claim and this column is an example which shows a corresponding relationship with the specific means as described in embodiment mentioned later.

(A) is a schematic sectional drawing of the semiconductor device which concerns on 1st Embodiment of this invention, (b) is an A arrow schematic plan view in (a). FIG. 2 is a schematic external view of the semiconductor device in FIG. FIG. 3 is a circuit equivalent diagram illustrating an example of a circuit configured by the semiconductor device according to the first embodiment. FIG. 6 is a schematic cross-sectional view of a semiconductor device as another example of the first embodiment. It is a schematic sectional drawing of the semiconductor device which concerns on 2nd Embodiment of this invention. It is a schematic sectional drawing of the semiconductor device as another example of 2nd Embodiment. It is a schematic sectional drawing of the semiconductor device as another example of 2nd Embodiment. It is a schematic sectional drawing of the semiconductor device which concerns on 3rd Embodiment of this invention. It is a schematic sectional drawing of the semiconductor device as another example of 3rd Embodiment. It is a schematic plan view which shows the 1st example of the variation of the planar structure of the electroconductive part in 3rd Embodiment. It is a schematic plan view which shows the 2nd example of the variation of the planar structure of the electroconductive part in 3rd Embodiment. It is a schematic plan view which shows the 3rd example of the variation of the planar structure of the electroconductive part in 3rd Embodiment. It is a schematic sectional drawing of the semiconductor device which concerns on 4th Embodiment of this invention. It is a schematic sectional drawing of the electroconductive part as another example of 4th Embodiment. It is a schematic sectional drawing of the semiconductor device which concerns on 5th Embodiment of this invention. It is a schematic sectional drawing of the semiconductor device as another example of 5th Embodiment. It is a schematic sectional drawing of the semiconductor device as another example of 5th Embodiment. It is a schematic sectional drawing of the semiconductor device as another example of 5th Embodiment. It is a schematic sectional drawing of the semiconductor device which concerns on 6th Embodiment of this invention. It is a schematic plan view of the semiconductor device which concerns on 7th Embodiment of this invention. It is a schematic plan view which shows the other example of 7th Embodiment. It is a schematic plan view which shows the other example of 7th Embodiment. It is a schematic plan view which shows the other example of 7th Embodiment. It is a schematic plan view which shows the other example of 7th Embodiment. It is a schematic sectional drawing of the semiconductor device which concerns on 8th Embodiment of this invention. (A) is a schematic sectional drawing of the semiconductor device which concerns on 9th Embodiment of this invention, (b) is a B plane schematic plan view in (a). (A) is a schematic sectional drawing of the semiconductor device as another example of 9th Embodiment, (b) is a C top schematic plan view in (a).

  Hereinafter, embodiments of the present invention will be described with reference to the drawings. In the following embodiments, parts that are the same or equivalent to each other are given the same reference numerals in the drawings in order to simplify the description.

(First embodiment)
FIG. 1 is a diagram showing a schematic configuration of a semiconductor device according to a first embodiment of the present invention. In FIG. 1, (a) is a schematic sectional view, and (b) is a mold resin from the direction of arrow A in (a). It is a figure which shows schematic planar structure of each heat sink 10-40 when seeing through 110. FIG. In FIG. 1B, some details of each heat sink are omitted, and the outer shape of the mold resin 110 is indicated by a one-dot chain line.

  Each of the first semiconductor element 50 and the second semiconductor element 60 is a plate-shaped semiconductor chip made of a silicon semiconductor or the like, and is one of the main surfaces 51 and 61 and the opposite main surface. This is a semiconductor element having electrodes (not shown) on the other surfaces 52 and 62. Specifically, power elements such as IGBTs and power transistors are employed.

  A conductive first heat sink 10 is provided on the one surface 51 side of the first semiconductor element 50, and the first heat sink 10 is electrically connected to the one surface 51 side of the first semiconductor element 50. Yes. In addition, a conductive second heat sink 20 is provided on the other surface 52 side of the first semiconductor element 50, and the second heat sink 20 is electrically connected to the other surface 52 side of the first semiconductor element 50. It is connected to the.

  A conductive third heat sink 30 is disposed on the same plane as the first heat sink 10, and a conductive fourth heat sink 40 is disposed on the same plane as the second heat sink 20. Yes.

  A second semiconductor element 60 is interposed between the third heat sink 30 and the fourth heat sink 40, and one surface 61 side of the second semiconductor element 60 is electrically connected to the third heat sink 30. The other surface 62 side is electrically connected to the fourth heat sink 40.

  That is, the first semiconductor element 50 and the second semiconductor element 60 are planarly arranged so that the one surface 61 side of the second semiconductor element 60 faces the same direction as the one surface 51 side of the first semiconductor element 50. In such an arrangement of the semiconductor elements 50 and 60, the conductive third heat sink 30 is provided on the one surface 61 side of the second semiconductor element 60, and the other surface of the second semiconductor element 60. A conductive fourth heat sink 40 is provided on the 61 side.

  Here, each of the heat sinks 10 to 40 has a plate shape made of a metal having excellent heat dissipation such as Cu or Fe. Here, as a typical example of this type of semiconductor device, a rectangular plate shape is formed. Yes.

  The first heat sink 10 and the second heat sink 20 sandwich the first semiconductor element 50 between the inner surfaces 11 and 21 while the inner surfaces 11 and 21 are opposed to each other. On the other hand, the third heat sink 30 and the fourth heat sink 40 sandwich the second semiconductor element 60 between the inner surfaces 31 and 41 while making the inner surfaces 31 and 41 face each other.

  Here, a conductive spacer 71 made of Cu or the like is interposed between the other surface 52 of the first semiconductor element 50 and the second heat sink 20, and the stacked first heat sink 10, The first semiconductor element 50, the spacer 71, and the second heat sink 20 are electrically and mechanically connected via a conductive adhesive 80.

  On the other hand, a conductive spacer 72 made of Cu or the like is interposed between the other surface 62 of the second semiconductor element 60 and the fourth heat sink 40, and the laminated third heat sink 30, The two semiconductor elements 60, the spacer 72, and the fourth heat sink 40 are electrically and mechanically connected via a conductive adhesive 80. Here, the conductive adhesive 80 is made of solder or a conductive adhesive represented by silver paste.

  The outer surfaces 12, 22, 32, and 42 of the heat sinks 10 to 40 are configured as heat radiating surfaces 12, 22, 32, and 42 that are exposed to the outside and radiate the heat of the semiconductor elements 50 and 60. Here, the outer surfaces 12 and 22 of the first heat sink 10 and the second heat sink 20 are parallel to each other, and the outer surfaces 32 and 42 of the third heat sink 30 and the fourth heat sink 40 are parallel to each other.

  Furthermore, the outer surface 12 of the first heat sink 10 and the outer surface 32 of the third heat sink 30 are located on the same plane, and the outer surface 22 of the second heat sink 20 and the outer surface 42 of the fourth heat sink 40 are located on the same plane. doing.

  As shown in FIG. 1, in this semiconductor device, a conductive portion 90 extending from the second heat sink 20 toward the third heat sink 30 is provided, and the second heat sink 20 is provided by the conductive portion 90. And the third heat sink 30 are electrically connected.

  Here, the conductive portion 90 is formed integrally with a portion of the second heat sink 20 that faces the fourth heat sink 40, and the tip side is the third side with the second heat sink 20 side as the root side. A columnar shape extending to the heat sink 30 is formed.

  The inner surface 31 side of the third heat sink 30 and the leading end side of the conductive portion 90 are electrically connected through the same conductive adhesive 80 as described above. As a result, the other surface 52 side of the first semiconductor element 50 and the one surface 61 of the second semiconductor element 60 are electrically connected via the conductive portion 90 to be at the same potential.

  Here, a concave portion 100 for accumulating the conductive adhesive 80 is provided at a connection portion of the third heat sink 30 with the conductive portion 90, and the leading end side of the conductive portion 90 is inserted into the concave portion 100 to conduct conductive adhesion. They are connected by a material 80. Here, the recess 100 is provided in the third heat sink 30 itself, and is formed by pressing, etching, cutting, or the like.

  In the present embodiment, the conductive portion 90 has a columnar shape extending between the second heat sink 20 and the third heat sink 30, but further on the distal end side of the conductive portion 90, that is, in the concave portion 100 of the conductive portion 90. The part that is inserted and contacts the conductive adhesive 80 has a bent shape. Here, the leading end side of the conductive portion 90 is bent in a direction parallel to the inner surface 31 of the third heat sink 30.

  As shown in FIG. 1, the conductive portion 90 is thinner than the first, second, third, and fourth heat sinks 10-40. Here, the conductive portion 90 is formed integrally with the second heat sink 20, but such a conductive portion 90 is easily formed by pressing, bending, cutting, or the like.

  As shown in FIG. 1, the heat sinks 10 to 40 and the semiconductor elements 50 and 60 are sealed with a general mold resin 110 such as an epoxy resin. Here, as described above, the outer surfaces 12 to 42 of the heat sinks 10 to 40 are exposed as the heat radiating surfaces 12 to 42 without being covered with the mold resin 110.

  2 is a schematic external view when the semiconductor device in FIG. 1A is viewed from the direction of arrow A, and FIG. 3 is a circuit equivalent diagram showing an example of a circuit constituted by the semiconductor device. is there.

  In the present embodiment, both the first semiconductor element 50 and the second semiconductor element 60 are configured as a diode built-in IGBT (RC-IGBT) or MOSFET as a single chip as shown in FIG. However, even in an embodiment in which, for example, the IGBT and the diode are composed of separate elements, the effect of the present application is not impaired.

  Here, in this embodiment, the positive electrode 120, the output electrode 130, and the negative electrode 140 in FIG. 3 are integrally formed with or connected to the first heat sink 10 and protrude from the mold resin 110, as shown in FIG. A portion that is integrally formed or connected to the second heat sink 20 and protrudes from the mold resin 110, and a portion that is integrally formed or connected to the fourth heat sink 40 and protrudes from the mold resin 110 to form the respective electrodes. It is configured as a terminal. Note that the output electrode 130 may be provided on the third heat sink 30 having the same potential as that of the second heat sink 20 instead of the second heat sink 20.

  In this case, the first semiconductor element 50 is electrically connected to the first heat sink 10 with the one surface 51 side as the collector side, and the second surface 52 side through the spacer 71 with the other surface 52 side as the emitter side. It is electrically connected to the heat sink 20.

  The second semiconductor element 60 is electrically connected to the third heat sink 30 with the one surface 61 side as the collector side, and is connected to the fourth heat sink 40 via the spacer 72 with the other surface 62 side as the emitter side. Electrically connected.

  As shown in FIG. 3, the emitter side of the first semiconductor element 50 and the collector side of the second semiconductor element 60 are electrically connected through the conductive portion 90 to have the same potential. . The circuit shown in FIG. 3 is used for an inverter that controls, for example, a motor driven by a three-phase alternating current.

  As shown in FIG. 2, the semiconductor device of this embodiment is provided with control terminals 150 and 151 having one end embedded in the mold resin 110 and the other end protruding from the mold resin 110.

  The control terminals 150 and 151 are electrically connected to the gates and sensor portions of the semiconductor elements 50 and 60 by wire bonding (not shown) in the mold resin 110. That is, the gates of the semiconductor elements 50 and 60 in FIG. 3 are connected to the control terminals 150 and 151. The spacers 71 and 72 serve to secure the wire bonding height of the control terminals 150 and 151.

  In the semiconductor device of this embodiment, the semiconductor elements 50 and 60 are wire-bonded to the control terminals 150 and 151, and the semiconductor elements 50 and 60 are sandwiched between the heat sinks 10 to 40 via the spacers 71 and 72. In addition to the connection by the conductive adhesive 80 and the connection by the conductive portion 90, this is put into a mold and sealed with the mold resin 110.

  In this semiconductor device, cooling members (not shown) are arranged on both sides of the first and third heat sinks 10 and 30 and the second and fourth heat sinks 20 and 40, and the outer surfaces 12 to 40 of the heat sinks 10 to 40 are arranged. Heat radiation and cooling are performed by bringing 42 into contact with the cooling member.

  By the way, according to the present embodiment, the conductive adhesive 80 is stored in the concave portion 100 provided in the third heat sink 30, and the leading end side of the conductive portion 90 extending from the second heat sink 20 side is inserted therein to conduct electricity. The adhesive material 80 is connected. Therefore, even if the height of the conductive portion 90 and the distance between the second heat sink 20 and the third heat sink 30 vary, the variation is absorbed in the depth direction of the recess 100.

  As a result, the parallelism between the second heat sink 20 and the third heat sink 30 connected via the conductive portion 90 is ensured, and connection failure due to the conductive portion 90 is prevented. Therefore, according to this embodiment, the connection by the electroconductive part 90 is ensured appropriately.

  Further, according to the present embodiment, the conductive portion 90 has a columnar shape extending between the second heat sink 20 and the third heat sink 30, and is inserted into the concave portion 100 of the conductive portion 90 to be a conductive adhesive. The part which contacts 80 is made into the shape bent. Therefore, the contact area between the conductive portion 90 and the conductive adhesive 80 is increased by the amount of the bending, and the connection strength is improved.

  Here, the conductive portion 90 may be a columnar shape extending in a direction extending from the second heat sink 20 toward the third heat sink 30, and a wide plate having a wide width dimension in a direction orthogonal to the extending direction. The case of the shape, that is, the case of the plate shape is also included.

  Moreover, in this embodiment, since the electroconductive part 90 is thinner than the 1st, 2nd, 3rd, 4th heat sinks 10-40, about each of these heat sinks 10-40, it is thick. Thus, heat dissipation can be secured. On the other hand, the conductive portion 90 can be reduced in size as a thin structure, resulting in a reduction in the size of the apparatus.

  Also, as shown in FIG. 1, in the present embodiment, in the third heat sink 30, the connection portion of the conductive portion 90 with the conductive adhesive 80 and the second semiconductor element 60 in the third heat sink 30. It is located on the same plane as the connection part.

As a result, the connection portion of the conductive portion 90 and the connection portion of the second semiconductor element 50 located on the same plane in the third heat sink 30 can be easily connected together by an inspection jig. The connection location can be inspected simultaneously with the connection portion of the second semiconductor element 60. FIG. 4 is a schematic cross-sectional view of a semiconductor device as another example of this embodiment. In the case of FIG. 1, a part of the bent portion at the tip of the conductive portion 90 protrudes from the conductive adhesive 80, but as shown in FIG. 4, the entire bent portion is entirely made of the conductive adhesive. 90 may be buried.

  In any case, if the leading end side of the conductive portion 90 is inserted into the concave portion 100 and connected to the conductive adhesive 80 in the concave portion 100, the effect of absorbing variation in the depth direction of the concave portion 100 as described above is obtained. Demonstrated.

(Second Embodiment)
FIG. 5 is a diagram showing a schematic cross-sectional configuration of a semiconductor device according to the second embodiment of the present invention. In this embodiment, the difference from the first embodiment will be mainly described.

  In the said 1st Embodiment, although the site | part which is inserted in the recessed part 100 among the electroconductive parts 90 and contacts the conductive adhesive 80 was made into the shape bent, as FIG. 5 shows in this embodiment. In addition, the portion of the conductive portion 90 that is inserted into the recess 100 and contacts the conductive adhesive 80 has a straight shape without being bent. That is, the part has a shape extending straight in the depth direction of the recess 100.

  In this case as well, even if the height of the conductive portion 90 and the distance between the second heat sink 20 and the third heat sink 30 vary, the variation is absorbed in the depth direction of the recess 100, so that the first Similar to the embodiment, the connection by the conductive portion 90 is appropriately ensured.

  Here, FIGS. 6 and 7 are schematic cross-sectional views of a semiconductor device as another example of the second embodiment, respectively.

  In the example of FIG. 5, similarly to FIG. 1, the conductive portion 90 extends obliquely from the second heat sink 20 toward the third heat sink 30, and is bent at one place at the intermediate portion outside the recess 100. The bent portion was shaped to extend perpendicularly to the inner surface 31 of the third heat sink 30.

  On the other hand, as in the conductive part 90 of FIGS. 6 and 7, the whole may have a columnar shape perpendicular to the inner surface 31 of the third heat sink 30. 6 and 7, the portion of the conductive portion 90 that is inserted into the recess 100 and contacts the conductive adhesive 80 is bent as shown in FIG. 1. Of course, it may be a shape.

(Third embodiment)
FIG. 8 is a diagram showing a schematic cross-sectional configuration of a semiconductor device according to the third embodiment of the present invention.

  In FIG. 1, the conductive portion 90 is formed integrally with the second heat sink 20. However, as shown in FIG. 8, the conductive portion 90 is separate from the second heat sink 20. The second heat sink 20 may be electrically connected via a conductive adhesive 80.

  In this case, the conductive portion 90 may be made of the same material as that of the second heat sink 20, but may be made of a material different from that of the second heat sink 20 as long as it has conductivity. . Also in this embodiment, since the effect of absorbing variation in the depth direction of the recess 100 is exhibited, the connection by the conductive portion 90 is appropriately ensured as described above.

  FIG. 9 is a schematic cross-sectional view of a semiconductor device as another example of the third embodiment. As shown in the example of FIG. 9, also in this embodiment, the separate conductive portion 90 is inserted into the concave portion 100 of the conductive portion 90 in the same manner as in the second embodiment, and the conductive adhesive 80. The part that contacts the surface may be a straight shape without being bent.

  FIGS. 10, 11, and 12 are schematic plan views showing a first example, a second example, and a third example, respectively, of variations in the planar configuration of the conductive portion 90 in the third embodiment.

  As shown in FIG. 10, the number of the conductive portions 90 may be one, or the number of the conductive portions 90 may be two as shown in FIG. 11, or the number of the conductive portions 90 is four as shown in FIG. But you can. In addition to these, there is no limit on the number of conductive portions 90.

  It should be noted that the planar configurations shown in FIGS. 10 to 12 can be similarly applied even when the conductive portion 90 is integrally formed by being bent from the second heat sink 20. Furthermore, in these FIGS. 10-12, the site | part which is inserted in the recessed part 100 among the electroconductive parts 90 and contacts the electroconductive adhesive 80 may be made into the bent shape like the said FIG. Of course.

(Fourth embodiment)
FIG. 13 is a diagram showing a schematic cross-sectional configuration of a semiconductor device according to the fourth embodiment of the present invention. Also in FIG. 13, as in FIG. 9 of the third embodiment, the conductive portion 90 is separate from the second heat sink 20, and is connected to the second heat sink 20 via the conductive adhesive 80. It is supposed to be electrically connected.

  Here, in the present embodiment, an inner hole 91 is further provided on the end portion side of the conductive portion 90 on the third heat sink 30 side, that is, on the distal end side of the conductive portion 90. The inner hole 91 opens from the inside of the conductive portion 90 to the tip of the conductive portion 90, and the bottom portion protrudes from the concave portion 100 and is located outside the concave portion 100. Such an inner hole 91 is formed by cutting or the like.

  Then, the conductive adhesive 80 is filled in the entire inner hole 91 from the opening portion of the inner hole 91 to the bottom portion. According to this, even if the opening area and depth of the recess 91 are small, the contact area between the conductive portion 90 and the conductive adhesive 80 is efficiently increased by the amount of the conductive adhesive 80 entering the inner hole 91. You can earn. Specifically, the conductive adhesive 80 can enter the inner hole 91 by a capillary phenomenon or the like.

  In FIG. 13, the case where the conductive portion 90 is separate from the second heat sink 20 is described. However, also in this embodiment, the conductive portion 90 is formed integrally with the second heat sink 20 as described above. It may be a thing.

  Further, in FIG. 13, the portion of the conductive portion 90 that is inserted into the concave portion 100 and contacts the conductive adhesive 80 has a straight shape without being bent. The part may be bent. An example of the bent shape of the conductive portion 90 in the fourth embodiment is shown in FIG.

(Fifth embodiment)
FIG. 15 is a diagram showing a schematic cross-sectional configuration of a semiconductor device according to the fifth embodiment of the present invention. In FIG. 15, the conductive portion 90 is formed integrally with the second heat sink 20 and has a straight shape as a whole.

  Further, as shown in FIG. 15, also in this embodiment, the first heat sink 10 and the second heat sink 20 have inner surfaces 11 and 21 as surfaces facing each other, and are opposite to the inner surfaces 11 and 21. The outer surfaces 12 and 22 are the heat radiating surfaces 12 and 22.

  The third heat sink 30 and the fourth heat sink 40 have inner surfaces 31 and 41 as surfaces facing each other, and outer surfaces 32 and 42 opposite to the inner surfaces 31 and 41 as heat radiation surfaces 32 and 42, respectively. is there.

  Also here, as in the above, the first to fourth heat sinks 10 to 40 are sealed with the mold resin 110, and the heat radiation surfaces 12 to 42 of the heat sinks 10 to 40 are on the outer surface of the mold resin 110. Exposed. The recess 100 is provided in the third heat sink 30 itself. Specifically, the recess 100 is formed on the inner surface 31 of the third heat sink 30.

  Here, in the present embodiment, the portion of the third heat sink 30 where the recess 100 is formed is a thin portion 30 a that is thinner than other portions of the third heat sink 30. Here, the thin portion 30 a of the third heat sink 30 is formed in a portion closer to the first heat sink 10 than the heat radiating surface 32 in the third heat sink 30.

  Further, in the example of FIG. 15, the thin portion 30 a of the third heat sink 30 is thinned by denting the outer surface 32 a more than the heat radiating surface 32 of the third heat sink 30. The outer surface 32 a of the thin portion 30 a of the heat sink 30 is sealed with the mold resin 110. A recess 100 is formed on the inner surface 31 a of the thin portion 30 a of the third heat sink 30. Such a thin-walled portion 30a is formed by pressing, extrusion molding, or the like.

  According to the present embodiment, when the recess 100 is formed in the third heat sink 30 by pressing, the recess 100 is formed in the thin portion 30a. Pressing is easy.

  In this case, the bulge on the heat radiating surface 32 side of the third heat sink 30 is likely to occur due to the formation of the concave portion 100, but the outer surface 32a side of the thin portion 30a is recessed from the heat radiating surface 32. Protruding from the heat radiating surface 32 is prevented. As a result, the contact between the heat radiation surface 32 of the third heat sink 30 and the external cooling member becomes good, which is preferable in terms of ensuring the cooling performance.

  Furthermore, in this case, a distance L between the heat radiation surfaces 12 and 32 of the first heat sink 10 and the third heat sink 30 arranged on the same plane and sealed with the mold resin 110 via the mold resin 110, The so-called creepage distance L (see FIG. 15) can be increased by the amount of sealing of the outer surface 32a of the thin portion 30a of the third heat sink 30, and an improvement in electrical insulation reliability is expected.

  FIG. 16 is a schematic cross-sectional view of a semiconductor device as another example of the fifth embodiment. As shown in FIG. 16, a thin portion 20 a for securing a creepage distance between the second heat sink 20 and the fourth heat sink 40 may also be provided on the second heat sink 20 side.

  In this case, in the second heat sink 20, a portion closer to the fourth heat sink 40 than the heat radiation surface 22 of the second heat sink 20 is a thin portion 20 a. And this thin part 20a is made thin by denting the outer surface 22a rather than the heat radiating surface 22 of the said 2nd heat sink 20. FIG.

  The outer surface 22a of the thin portion 20a of the second heat sink 20 is sealed with the mold resin 110, and the conductive portion 90 extends from the thin portion 20a of the second heat sink 20 to the third heat sink 30 side. Has been.

  According to FIG. 16, the creeping distance between the second heat sink 20 and the fourth heat sink 40 arranged on the same plane and sealed with the mold resin 110 is further determined by the thin-walled portion 20 a of the second heat sink 20. Since the outer surface 22a is resin-sealed, the outer surface 22a can be lengthened, and an improvement in electrical insulation reliability is expected.

  FIG. 17 is a schematic cross-sectional view of a semiconductor device as another example of the fifth embodiment, which is obtained by further bending the tip of the conductive portion 90 in FIG.

  FIG. 18 is a schematic cross-sectional view of a semiconductor device as still another example of the fifth embodiment. Also in FIG. 18, a portion of the third heat sink 30 where the recess 100 is formed is a thin portion 30 a that is thinner than other portions of the third heat sink 30.

  Here, the thin portion 30a of the third heat sink 30 is thinned by denting a part of the inner surface 31 of the third heat sink 30, and the concave portion 100 is formed on the inner surface 31a of the thin portion 30a. ing. According to this, since both the thin portion 30a and the concave portion 100 can be formed by processing from the inner surface 21 side of the third heat sink 30 by pressing or the like, the processing becomes easy.

  In the fifth embodiment, when the concave portion 100 is provided in the third heat sink 30 itself, the configuration of the thin portion 30a is adopted. Therefore, the conductive portion 90 is different from the second heat sink 20. Needless to say, it may be appropriately combined with the above-described embodiments, such as a body.

(Sixth embodiment)
FIG. 19 is a diagram showing a schematic cross-sectional configuration of a semiconductor device according to the sixth embodiment of the present invention.

  In each of the above embodiments, the recess 100 is formed in the third heat sink 30 itself. However, as shown in FIG. 19 of this embodiment, the recess 100 is electrically connected to the third heat sink 30. The third heat sink 30 may be provided on a separate member 160.

  Here, the separate member 160 only needs to be conductive, and may be the same material as the third heat sink 30 or a different material. Here, the separate member 160 and the third heat sink 30 are electrically and mechanically connected by the conductive adhesive 80, but may be connected by, for example, caulking, welding, or the like.

  Thus, since this embodiment provides the recessed part 100 in the 3rd heat sink 30 via the member 160 of another body, except this part, each said 1st-5th implementation suitably. Needless to say, the present invention can be applied in combination with the embodiment shown in the embodiment.

(Seventh embodiment)
FIG. 20 is a diagram showing a schematic plan configuration of a semiconductor device according to the seventh embodiment of the present invention.

  In FIG. 1, the conductive portion 90 is integrally formed at a portion of the second heat sink 20 that faces the fourth heat sink 40, but in this embodiment, as shown in FIG. 20. The conductive portion 90 is provided at a position away from the portion of the second heat sink 20 that faces the fourth heat sink 40.

  Specifically, in FIG. 20, a part of the second heat sink 20 having a rectangular plate shape that is orthogonal to the side facing the fourth heat sink 40 is part of the heat sink 20 in the direction orthogonal to the orthogonal side. The conductive portion 90 is provided in the protruding portion 23 which is a protruding portion, which protrudes in the plane direction. As a result, the conductive portion 90 is provided at a position deviated from a position where the second heat sink 20 and the fourth heat sink 40 face each other.

  Here, corresponding to the conductive portion 90, the protruding portion 33 is provided at a position out of the third heat sink 30 from the position facing the first heat sink 10, and the recessed portion 100 is provided in the protruding portion 33. . That is, the conductive portion 90 and the concave portion 100 connected to the conductive portion 90 and the second heat sink 20 and the fourth heat sink 40 are positioned away from each other, and the first heat sink 10 and the third heat sink. 30 is disposed at a position deviated from the facing position.

  According to the present embodiment, since the conductive portion 90 is not positioned between the opposing heat sinks 10 to 40 between the semiconductor elements 50 and 60, the interval between the heat sinks can be reduced, and thus the size of the semiconductor device can be reduced. This is a preferable configuration.

  21, FIG. 22, FIG. 23, and FIG. 24 are schematic plan views showing other examples of the seventh embodiment, respectively. Here, in FIGS. 21 to 23, the conductive portion 90 is a separate body from the second heat sink 20, and FIG. 24 is integrated and corresponds to FIG. 1 described above. The configuration of the conductive portion 90 in the present embodiment may be as shown in FIGS.

  In the present embodiment, the conductive portion 90 is provided at a position that is out of the space where the second heat sink 20 and the fourth heat sink 40 face each other. Of course, the present invention can be applied in combination with the modes shown in the sixth to sixth embodiments.

(Eighth embodiment)
FIG. 25 is a diagram showing a schematic cross-sectional configuration of a semiconductor device according to the eighth embodiment of the present invention.

  In each of the above embodiments, the first semiconductor element 50 and the second semiconductor element 60 are both configured as one diode as a diode built-in IGBT (RC-IGBT). For example, an IGBT is configured. A configuration in which each of the semiconductor elements 50 and 60 is configured by two chips, that is, the first chips 50a and 60a and the second chips 50b and 60b constituting the diode, may be a so-called 2-in-1 configuration.

(Ninth embodiment)
26A and 26B are diagrams showing a schematic configuration of a semiconductor device according to the ninth embodiment of the present invention, in which FIG. 26A is a schematic sectional view, and FIG. 26B is a mold resin from the direction of arrow B in FIG. It is a figure which shows schematic planar structure of each heat sink 10-40 when seeing through 110. FIG.

  Unlike the above embodiments, the present embodiment appropriately secures the connection by the conductive portion 90 by devising the connection configuration of the conductive portion 90 to the base side, that is, the second heat sink 20 side of the conductive portion 90. It is what I did.

  That is, as shown in FIG. 26, in the present embodiment, the conductive portion 90 is separate from the second heat sink 20, the hole 25 is provided in the second heat sink 20, and the hole 25 is electrically conductive. The base side of the portion 90 is inserted, and the conductive portion 90 and the second heat sink 20 are electrically connected through the conductive adhesive 80 in the hole 25.

  Here, the hole 25 is a through-hole formed in the inner surface 21 and the outer surface 22 of the second heat sink 20 formed by pressing or the like, but has a bottomed hole that opens in the inner surface 21 and closes on the outer surface 22. But you can. In FIG. 25, the concave portion 100 is not provided in the connection portion of the third heat sink 30 with the conductive portion 90, and the inner surface 31 that is the connection surface of the second semiconductor element 60 is provided on the inner surface 31 as in the conventional case. They are connected as they are through the conductive adhesive 80.

  According to the present embodiment, the conductive adhesive 80 is provided in the hole portion 25 provided in the second heat sink 20, and the base side of the conductive portion 90 is inserted therein to be connected by the conductive adhesive 80. Therefore, even if the height of the conductive portion 90 and the distance between the second heat sink 20 and the third heat sink 30 vary, the variation is absorbed in the depth direction of the hole portion 25.

  As a result, the parallelism between the second heat sink 20 and the third heat sink 30 connected via the conductive portion 90 is ensured, and connection failure due to the conductive portion 90 is prevented. Therefore, also by this embodiment, the connection by the electroconductive part 90 can be ensured appropriately.

  27 is a diagram showing a schematic configuration of a semiconductor device as another example of the ninth embodiment. In FIG. 27, (a) is a schematic cross-sectional view, and (b) is from the direction of arrow C in (a). It is a figure which shows the schematic planar structure of each heat sink 10-40 when permeate | transmitting the mold resin 110 and seeing.

  As shown in FIG. 27, in the present embodiment as well, as in the first embodiment, the concave portion 100 is provided in the connection portion of the third heat sink 30 with the conductive portion 90 or the conductive portion 90 is electrically conductive. The tip portion of the portion 90 may be bent.

(Other embodiments)
In each of the above embodiments, the conductive portion 90 is thinner than the first, second, third, and fourth heat sinks 10 to 40, but may be equivalent or thick. The mold resin 110 may be omitted if possible.

DESCRIPTION OF SYMBOLS 10 1st heat sink 11 Inner surface of 1st heat sink 12 Heat dissipation surface as outer surface of 1st heat sink 20 2nd heat sink 20a Thin part of 2nd heat sink 21 Inner surface of 2nd heat sink 21a Thin wall of 2nd heat sink Inner surface 22 heat radiating surface as outer surface of second heat sink 22a outer surface of thin portion of second heat sink 25 second heat sink hole 30 third heat sink 30a thin portion of third heat sink 31 third heat sink Inner surface 31a inner surface of the thin portion of the third heat sink 32 heat radiating surface as the outer surface of the third heat sink 32a outer surface of the thin portion of the third heat sink 40 fourth heat sink 41 inner surface of the fourth heat sink 42 fourth heat sink Radiating surface as the outer surface of the first semiconductor element 51 first One surface of the semiconductor element 52 Other surface of the first semiconductor element 60 Second semiconductor element 61 One surface of the second semiconductor element 62 Other surface of the second semiconductor element 80 Conductive adhesive 90 Conductive portion 91 Within the conductive portion Hole 100 Recess 160 Separate member

Claims (15)

A conductive first heat sink (10) provided on the one surface (51) side of the first semiconductor element (50) and electrically connected to the one surface (51) side of the first semiconductor element (50). When,
A conductive second heat sink provided on the other surface (52) side of the first semiconductor element (50) and electrically connected to the other surface (52) side of the first semiconductor element (50). (20) and
A conductive third heat sink (30) disposed on the same plane as the first heat sink (10);
A conductive fourth heat sink (40) disposed on the same plane as the second heat sink (20);
It is interposed between the third heat sink (30) and the fourth heat sink (40), one side (61) side is electrically connected to the third heat sink (30), and the other side (62) side is A second semiconductor element (60) electrically connected to the fourth heat sink (40);
A conductive portion (90) extending from the second heat sink (20) toward the third heat sink (30) and electrically connecting the second heat sink (20) and the third heat sink (30); With
The third heat sink (30) and the leading end side of the conductive portion (90) are electrically connected via a conductive adhesive (80),
A semiconductor device in which the other surface (52) side of the first semiconductor element (50) and one surface (61) of the second semiconductor element (60) are at the same potential via the conductive portion (90). In
A concave portion (100) for storing the conductive adhesive (80) is provided at a connection portion of the third heat sink (30) with the conductive portion (90). A semiconductor device, wherein a tip end side of the portion (90) is inserted and connected by the conductive adhesive (80).   The conductive portion (90) has a columnar shape extending between the second heat sink (20) and the third heat sink (30), and is inserted into the concave portion (100) of the conductive portion (90). 2. The semiconductor device according to claim 1, wherein a portion that contacts the conductive adhesive (80) has a bent shape.   The semiconductor device according to claim 1, wherein the concave portion (100) is provided in the third heat sink (30) itself.   The part of the third heat sink (30) where the recess (100) is formed is a thin part (30a) thinner than other parts of the third heat sink (30). The semiconductor device according to claim 3. The first heat sink (10) and the second heat sink (20) have mutually opposing surfaces as inner surfaces (11, 21), and an outer surface opposite to the inner surfaces (11, 21) as a heat radiating surface (12 22)
The third heat sink (30) and the fourth heat sink (40) have inner surfaces (31, 41) as surfaces facing each other, and an outer surface opposite to the inner surfaces (31, 41) as a heat radiating surface (32). 42)
The first, second, third, and fourth heat sinks (10 to 40) are sealed with a mold resin (110), and the heat dissipation surfaces (12 to 12) of the heat sinks (10 to 40) are sealed. 42) is exposed on the outer surface of the mold resin (110),
In the third heat sink (30), a portion closer to the first heat sink (10) than the heat radiating surface (32) of the third heat sink (30) is the thin portion (30a),
The thin part (30a) of the third heat sink (30) is thinned by denting the outer surface (32a) more than the heat radiating surface (32) of the third heat sink (30), The outer surface (32a) of the thin part (30a) of the third heat sink (30) is sealed with the mold resin (110),
The semiconductor device according to claim 4, wherein the recess (100) is formed in an inner surface (31a) of a thin portion (30a) of the third heat sink (30). In the second heat sink (20), a portion closer to the fourth heat sink (40) than the heat radiating surface (22) of the second heat sink (20) has an outer surface (22a) as the second heat sink ( 20) is a thin-walled portion (20a) made thinner by being recessed than the heat radiation surface (22),
The outer surface (22a) of the thin portion (20a) of the second heat sink (20) is sealed with the mold resin (110),
6. The semiconductor device according to claim 5, wherein the conductive portion (90) extends from the thin portion (20a) of the second heat sink (20) toward the third heat sink (30). The third heat sink (30) has a surface facing the fourth heat sink (40) as an inner surface (31) and an outer surface opposite to the inner surface (31) as a heat radiating surface (32). Yes,
The thin portion (30a) is thinned by denting a part of the inner surface (31) of the third heat sink (30),
The semiconductor device according to claim 4, wherein the recess (100) is formed in an inner surface (31a) of the thin-walled portion (30a).   The connection part of the conductive part (90) with the conductive adhesive (80) and the connection part of the third heat sink (30) with the second semiconductor element (60) are located on the same plane. The semiconductor device according to claim 1, wherein the semiconductor device is provided.   3. The semiconductor according to claim 1, wherein the recess (100) is provided in a separate member (160) electrically connected to the third heat sink (30). apparatus.   The conductive portion (90) is thinner than the first, second, third, and fourth heat sinks (10 to 40), according to any one of claims 1 to 9, The semiconductor device described.   The said conductive part (90) is provided in the position which remove | deviated from the space between the said 2nd heat sink (20) and the said 4th heat sink (40), The Claim 1 thru | or 10 characterized by the above-mentioned. The semiconductor device according to any one of the above.   The semiconductor device according to any one of claims 1 to 11, wherein the conductive portion (90) is formed integrally with the second heat sink (20).   The conductive portion (90) is separate from the second heat sink (20), and is electrically connected to the second heat sink (20) via the conductive adhesive (80). The semiconductor device according to claim 1, wherein the semiconductor device is connected to a semiconductor device. Inside the conductive portion (90) is provided an inner hole (91) that opens at the tip of the conductive portion (90) and whose bottom is located outside the concave portion (100),
The semiconductor device according to any one of claims 1 to 13, wherein the conductive adhesive (80) is filled in the entire inner hole (91). A conductive first heat sink (10) provided on the one surface (51) side of the first semiconductor element (50) and electrically connected to the one surface (51) side of the first semiconductor element (50). When,
A conductive second heat sink provided on the other surface (52) side of the first semiconductor element (50) and electrically connected to the other surface (52) side of the first semiconductor element (50). (20) and
A conductive third heat sink (30) disposed on the same plane as the first heat sink (10);
A conductive fourth heat sink (40) disposed on the same plane as the second heat sink (20);
It is interposed between the third heat sink (30) and the fourth heat sink (40), one side (61) side is electrically connected to the third heat sink (30), and the other side (62) side is A second semiconductor element (60) electrically connected to the fourth heat sink (40);
A conductive portion (90) extending from the second heat sink (20) toward the third heat sink (30) and electrically connecting the second heat sink (20) and the third heat sink (30); With
The third heat sink (30) and the leading end side of the conductive portion (90) are electrically connected via a conductive adhesive (80),
A semiconductor device in which the other surface (52) side of the first semiconductor element (50) and one surface (61) of the second semiconductor element (60) are at the same potential via the conductive portion (90). In
The conductive portion (90) is separate from the second heat sink (20),
The second heat sink (20) is provided with a hole (25),
The base of the conductive portion (90) is inserted into the hole (25), and the conductive portion (90) and the second heat sink (20) are connected to the conductive portion in the hole (25). A semiconductor device characterized in that it is electrically connected via an adhesive (80).

Images