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JP5488874B2 - Inspection equipment for integrated circuit boards - Google Patents
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JP5488874B2 - Inspection equipment for integrated circuit boards - Google Patents

Inspection equipment for integrated circuit boards Download PDF

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JP5488874B2
JP5488874B2 JP2009168311A JP2009168311A JP5488874B2 JP 5488874 B2 JP5488874 B2 JP 5488874B2 JP 2009168311 A JP2009168311 A JP 2009168311A JP 2009168311 A JP2009168311 A JP 2009168311A JP 5488874 B2 JP5488874 B2 JP 5488874B2
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circuit board
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mems
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正喜 江刺
宏和 高橋
友崇 矢部
篤 尾上
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Tohoku University NUC
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Description

本発明は、MEMS(Micro Electro Mechanical Systems)素子が搭載されるべき集積回路基板を事前に検査するための集積回路基板用検査装置に関する。   The present invention relates to an inspection apparatus for an integrated circuit board for inspecting in advance an integrated circuit board on which a MEMS (Micro Electro Mechanical Systems) element is to be mounted.

集積回路が形成されている基板(以下、これを「集積回路基板」と呼ぶ。)上に受動素子(一般に「MEMS素子」と呼ぶ。)を搭載することで、集積回路と受動素子とで回路を形成し、各種の機能デバイスを作製することがなされている。ここで、「MEMS素子」とはMEMS作製のための技術を用いて、立体形成された機能デバイスをいう。「搭載する」とは別々に作製した集積回路基板とMEMS素子を接合し一体化させること、もしくは集積回路基板上に直接MEMS素子を形成することをいう。   By mounting a passive element (generally referred to as a “MEMS element”) on a substrate on which an integrated circuit is formed (hereinafter referred to as an “integrated circuit board”), a circuit is formed by the integrated circuit and the passive element. To form various functional devices. Here, the “MEMS element” refers to a functional device that is three-dimensionally formed using a technique for manufacturing MEMS. “Mounting” means that an integrated circuit board and a MEMS element produced separately are joined and integrated, or a MEMS element is formed directly on the integrated circuit board.

図23は従来の機能デバイス100を模式的に示しており、機能デバイス100は、集積回路が形成されている基板、つまり集積回路基板110に、回路素子を有する別の基板つまり、MEMS素子120が搭載されている。具体的には、集積回路基板110には薄膜形成、微細加工などの各種工程の繰り返しを経て複数の電子素子が形成されていて、複数の素子が配線パターンにより接続されており、集積回路基板110の表面には電極パッド111A,111Bが形成されている。MEMS素子120にも同様に薄膜形成、微細加工などの各種工程の繰り返しを経て一又は複数の素子が形成されており、MEMS素子120は下面に接続用電極121A,121Bを有している。接続用電極121A,121Bが電極パッド111A,111B上に電気的に接続されるようMEMS素子120が集積回路基板110上に搭載されて固定される。このような構造を有する機能デバイス100は、MEMS素子120内の回路素子が接続用電極121A,121Bと電極パッド111A、111Bとをそれぞれ経由して集積回路に接続され、所定の機能を発揮する。   FIG. 23 schematically shows a conventional functional device 100. The functional device 100 includes a substrate on which an integrated circuit is formed, that is, an integrated circuit substrate 110, and another substrate having circuit elements, that is, a MEMS device 120. It is installed. Specifically, a plurality of electronic elements are formed on the integrated circuit substrate 110 through repetition of various processes such as thin film formation and microfabrication, and the plurality of elements are connected by a wiring pattern. Electrode pads 111A and 111B are formed on the surface. Similarly, the MEMS element 120 is formed with one or a plurality of elements through repetition of various processes such as thin film formation and microfabrication, and the MEMS element 120 has connection electrodes 121A and 121B on the lower surface. The MEMS element 120 is mounted on the integrated circuit substrate 110 and fixed so that the connection electrodes 121A and 121B are electrically connected to the electrode pads 111A and 111B. In the functional device 100 having such a structure, the circuit elements in the MEMS element 120 are connected to the integrated circuit through the connection electrodes 121A and 121B and the electrode pads 111A and 111B, respectively, and exhibit a predetermined function.

このように、集積回路基板110内の集積回路はそれ自体として機能せず、MEMS素子120と接続されることで、その集積回路とそのMEMS素子120とが初めて機能するわけである。しかしながら、集積回路基板110にMEMS素子120を搭載した後に検査を行って所定の機能が発揮しないことが分かった場合には、その原因が集積回路基板110それ自体、MEMS素子120それ自体、MEMS素子搭載プロセスの最中に発生した集積回路へのダメージの何れかにあるかを判断することはできない。   As described above, the integrated circuit in the integrated circuit substrate 110 does not function as such, but the integrated circuit and the MEMS element 120 function for the first time when connected to the MEMS element 120. However, when the inspection is performed after mounting the MEMS element 120 on the integrated circuit board 110 and it is found that the predetermined function is not exhibited, the causes are the integrated circuit board 110 itself, the MEMS element 120 itself, and the MEMS element. It cannot be determined whether there is any damage to the integrated circuit that occurred during the mounting process.

ところで、集積回路が形成されている基板を検査することはすでに知られている。(例えば特許文献1、2)。   By the way, it is already known to inspect a substrate on which an integrated circuit is formed. (For example, Patent Documents 1 and 2).

特許文献1は、プローブカードに設けられ、バネ部とこのバネ部より細径でバネ部の一端から直線状に延びる針部とを有する導電性のバネ型プローブを保持するプローブ保持構造について開示している。具体的には、プローブカード側に配置されるインタポーザと、インタポーザに主面を対向させて測定対象物側に配置されるプローブ支持基板とを有し、インタポーザにはバネ型プローブとプローブカードとを電気的に接続する導電路が設けられており、プローブ支持基板には主面に直交する貫通孔が形成されており、プローブ支持基板及びインタポーザは針部が貫通孔に貫通されると共にバネ部の後端が配線手段に接触して両基板間にバネ部を縮めた状態に挟んで保持している。   Patent Document 1 discloses a probe holding structure that is provided on a probe card and holds a conductive spring-type probe having a spring portion and a needle portion that is smaller in diameter than the spring portion and extends linearly from one end of the spring portion. ing. Specifically, the interposer has an interposer disposed on the probe card side and a probe support substrate disposed on the measurement object side with the main surface facing the interposer, and the interposer includes a spring-type probe and a probe card. A conductive path for electrical connection is provided, and a through hole perpendicular to the main surface is formed in the probe support substrate. The probe support substrate and the interposer have a needle portion that penetrates the through hole and a spring portion. The rear end is in contact with the wiring means and is held in a state where the spring portion is contracted between the two substrates.

特許文献2は、少なくとも1つの製品ダイ上の製品回路をテストするためのテストアセンブリについて開示している。具体的には、それぞれが製品ダイの少なくとも一部の製品回路をテストするためのテスト回路を有する複数の第1のレベルのテストダイと、第1のレベルのテストダイを少なくとも1つの製品ダイへ電気的に結合するための第1の相互接続手段と、1つの共有テストダイと、共有テストダイを第1のレベルのテストダイのそれぞれに電気的に結合するための第2の相互接続手段と、共有テストダイと通信を行うホストコントローラに共有テストダイを電気的に結合するための第3の相互接続手段とを備えている。第1の相互接続手段が複数の接触要素を備えており、これらの複数の接触要素がバネ接触要素から成っている。   U.S. Pat. No. 6,089,077 discloses a test assembly for testing a product circuit on at least one product die. Specifically, a plurality of first level test dies each having a test circuit for testing at least part of the product circuit of the product die, and electrically connecting the first level test die to the at least one product die First interconnect means for coupling to each other, one shared test die, second interconnect means for electrically coupling the shared test die to each of the first level test dies, and communicating with the shared test die And a third interconnect means for electrically coupling the shared test die to the host controller that performs the above. The first interconnection means comprises a plurality of contact elements, the plurality of contact elements comprising spring contact elements.

特開2007−171139号公報(フロントページ)JP 2007-171139 A (front page) 特許第3754616号公報(請求項1、請求項5、請求項7)Japanese Patent No. 3754616 (Claim 1, Claim 5, Claim 7)

図23を示して説明したように、集積回路基板110上にMEMS素子120を搭載する場合、特に、集積回路基板110中の複数の素子とMEMS素子中の回路素子とで一体として高周波回路を形成するような場合において集積回路基板110を検査することを考えた時、検査装置のバネ性を有するプローブで検査すると、そのプローブ及びバネ接続要素の何れかと集積回路基板との電気的な接続経路の形状がプローブの押し付けによって変化する。MEMS素子を搭載した集積回路基板がGHz以上の高周波回路を形成する場合には、低周波回路とは異なり、検査は慎重に実施される必要がある。特に検査対象がGHzオーダーを超える高周波回路の部品としての集積回路基板110である場合、その周波数特性が周りの環境によって左右されるからである。   As shown in FIG. 23, when the MEMS element 120 is mounted on the integrated circuit board 110, in particular, a plurality of elements in the integrated circuit board 110 and circuit elements in the MEMS element are integrally formed with a high frequency circuit. When considering the inspection of the integrated circuit board 110 in such a case, if an inspection device is used to inspect with the probe having the spring property, the electrical connection path between the probe and the spring connecting element and the integrated circuit board The shape changes by pressing the probe. When the integrated circuit board on which the MEMS element is mounted forms a high frequency circuit of GHz or higher, unlike the low frequency circuit, the inspection needs to be performed carefully. This is because, in particular, when the inspection target is the integrated circuit board 110 as a component of a high-frequency circuit exceeding the GHz order, the frequency characteristics depend on the surrounding environment.

一例を挙げると、配線に高周波を流すと同じ頻度で変化する電磁波が発生する。従って、配線などの電気導通領域の周りに電磁波に反応する物質が存在すると、電磁気的な損失が生じる。具体的には、集積回路基板と検査装置との間で絶縁体ではない高抵抗物質があると渦電流の発生により渦電流損失が生じる。集積回路基板と検査装置との間で周りに誘電体が存在すると誘電損失が生じる。これらの損失により、Q値が低下して設計通りの特性を示さない。   For example, when a high frequency is passed through the wiring, an electromagnetic wave that changes at the same frequency is generated. Therefore, if there is a substance that reacts to electromagnetic waves around an electrical conduction region such as a wiring, an electromagnetic loss occurs. Specifically, if there is a high-resistance material that is not an insulator between the integrated circuit board and the inspection apparatus, eddy current loss occurs due to generation of eddy current. If there is a dielectric around the integrated circuit board and the inspection apparatus, dielectric loss occurs. Due to these losses, the Q value decreases and the designed characteristics are not exhibited.

別の例を挙げると、配線の周りに電気的な物質があると、その物質に受動的な性質が追加され、設計の仕様から変化する。具体的には、集積回路基板と検査装置との間の周りに磁性体が存在すると、その磁性体が磁場を溜めようとするのでインダクタンスの増加をもたらす。集積回路基板と検査装置との間の周りに別の電気導通領域があると浮遊容量の発生をもたらす。これら、インダクタンスの増加、浮遊容量の発生は、設計からずれた受動的な性質となってしまう。   As another example, if there is an electrical material around the wiring, it adds a passive property to the material and changes from the design specifications. Specifically, if a magnetic material is present between the integrated circuit board and the inspection apparatus, the magnetic material tends to accumulate a magnetic field, resulting in an increase in inductance. If there is another region of electrical conduction between the integrated circuit board and the inspection device, stray capacitance is generated. These increase in inductance and generation of stray capacitance become passive properties that deviate from the design.

以上のように、MEMS素子を集積回路基板上に搭載して高周波回路を構成する場合、集積回路基板のみを検査する際に、実際のMEMS素子を搭載した状態と同じ状態で検査しなければ、正しい検査を行うことができない。特許文献1、2に示すように検査装置がバネ性のプローブを備えており、そのプローブで集積回路基板を検査する場合には、集積回路基板と検査装置との間でのプローブの形状変化や実際のMEMS素子との寸法の違いのため実際のMEMSを搭載したときと異なるインダクタンスの発生、浮遊容量の発生、電磁気的な損失などが生じ、検査素子の周波数特性が設計仕様から変化して予測不能な結果を招来する。特に、MEMS素子を集積回路基板上に搭載して発振回路のような高周波回路を構成している場合には、共振周波数の変化や電磁気的な損失によるQ値の低下により発振しないことがある。またそのプローブと集積回路基板との接触抵抗が増加して発振しなかったりする。   As described above, when a high-frequency circuit is configured by mounting a MEMS element on an integrated circuit substrate, when inspecting only the integrated circuit substrate, if inspection is not performed in the same state as the state in which the actual MEMS element is mounted, The correct inspection cannot be performed. As shown in Patent Documents 1 and 2, when the inspection apparatus includes a spring-like probe, and the integrated circuit board is inspected with the probe, the shape change of the probe between the integrated circuit board and the inspection apparatus Due to the difference in dimensions with the actual MEMS element, the generation of inductance, stray capacitance, electromagnetic loss, etc., which are different from the actual MEMS mounted, occur, and the frequency characteristics of the test element are predicted to change from the design specifications Inviting an impossible result. In particular, when a MEMS element is mounted on an integrated circuit substrate to constitute a high-frequency circuit such as an oscillation circuit, oscillation may not occur due to a change in resonance frequency or a decrease in Q value due to electromagnetic loss. Further, the contact resistance between the probe and the integrated circuit board increases, and oscillation may not occur.

本発明は、以上の点に鑑み、集積回路基板にMEMS素子を搭載する前にその集積回路基板が仕様通りの性能があるかを正しく検査することができる、集積回路基板用検査装置を提供することを目的する。   In view of the above, the present invention provides an inspection apparatus for an integrated circuit board that can correctly inspect whether the integrated circuit board has performance as specified before mounting the MEMS element on the integrated circuit board. Purpose.

上記目的を達成するため、本発明の集積回路基板用検査装置は、パッケージを備えたMEMS素子が搭載されるべき集積回路基板の検査に供され、複数の検査用接続部を有する検査用素子と、集積回路基板の電極パッドに検査用接続部を押圧する押圧手段と、を備える集積回路基板用評価装置であって、
検査用素子と集積回路基板を接続して形成される回路と、MEMS素子を集積回路基板に搭載して形成される回路とが、等価回路として同一となるよう、検査用素子を構成し、
検査用素子は、MEMS素子のパッケージと同一構造で且つ電気配線が形成されたパッケージを有し、パッケージの集積回路基板との当接面には尖り部が突出して形成されており、尖り部は、検査用素子と集積回路基板とを接続する際に、集積回路基板に形成された電極パッドのうち、検査用接続部が当接する電極パッドとは別の電極パッドに当接するように構成され、
さらに、押圧手段により検査用接続部を電極パッドに押圧したとき、検査用接続部が変形しないよう、検査用接続部は剛性を有するとともに押圧手段は弾性を有することを特徴とする。
In order to achieve the above object, an inspection apparatus for an integrated circuit board according to the present invention is used for inspection of an integrated circuit board on which a MEMS element having a package is to be mounted, and has a plurality of inspection connection parts. An evaluation device for an integrated circuit board, comprising: a pressing unit that presses the connection part for inspection against the electrode pad of the integrated circuit board,
The inspection element is configured so that the circuit formed by connecting the inspection element and the integrated circuit board and the circuit formed by mounting the MEMS element on the integrated circuit board are the same as an equivalent circuit,
The inspection element has a package having the same structure as that of the MEMS element package and formed with electric wiring, and a pointed portion protrudes from a contact surface of the package with the integrated circuit substrate. When the test element and the integrated circuit board are connected, the electrode pad formed on the integrated circuit board is configured to come into contact with an electrode pad different from the electrode pad with which the test connection part comes into contact,
Further, when the inspection connecting portion is pressed against the electrode pad by the pressing means, the inspection connecting portion has rigidity and the pressing means has elasticity so that the inspection connecting portion is not deformed.

また、本発明の集積回路基板用検査装置は、MEMS素子が搭載されるべき集積回路基板の検査に供され、複数の検査用接続部を有する検査用素子と、集積回路基板の電極パッドに検査用接続部を押圧する押圧手段と、を備える集積回路基板用評価装置であって、The inspection apparatus for an integrated circuit board of the present invention is used for inspection of an integrated circuit board on which a MEMS element is to be mounted, and inspects an inspection element having a plurality of inspection connection portions and an electrode pad of the integrated circuit board. A pressing means for pressing the connecting portion, and an evaluation apparatus for an integrated circuit board comprising:
検査用素子と集積回路基板を接続して形成される回路と、MEMS素子を前記集積回路基板に搭載して形成される回路とが、等価回路として同一となるよう、検査用素子を構成し、The inspection element is configured so that the circuit formed by connecting the inspection element and the integrated circuit board and the circuit formed by mounting the MEMS element on the integrated circuit board are the same as an equivalent circuit,
押圧手段により検査用接続部を電極パッドに押圧したとき、検査用接続部が変形しないよう、検査用接続部は剛性を有するとともに、押圧手段は弾性を有し、When the inspection connecting portion is pressed against the electrode pad by the pressing means, the inspection connecting portion has rigidity and the pressing means has elasticity so that the inspection connecting portion is not deformed.
さらに、検査用素子には、MEMS素子の回路素子と同一の素子を保持する絶縁体が設けられると共に、絶縁体の集積回路基板との対向面から突出して疑似検査用接続部及び複数の検査用接続部が設けられ、押圧手段が検査用接続部を電極パッドに押圧する際に、疑似検査用接続部により検査用素子を水平に保って検査用接続部が電極パッドと接触することを特徴とする。Further, the test element is provided with an insulator that holds the same element as the circuit element of the MEMS element, and protrudes from the surface of the insulator facing the integrated circuit substrate to project the pseudo test connection portion and the plurality of test elements. A connecting portion is provided, and when the pressing means presses the inspection connecting portion against the electrode pad, the inspection connecting portion is in contact with the electrode pad while keeping the inspection element horizontal by the pseudo inspection connecting portion. To do.

本発明によれば、MEMS素子が搭載されるべき集積回路基板の電極パッドに対し、剛性の検査用接続部を含む検査用素子を接触させることで、MEMS素子を搭載した状態と電気的に同じ状態を再現できる。よって、集積回路基板を正しく検査することができる。集積回路基板自体を事前に検査しておき、検査に合格した集積回路基板に対してMEMS素子を搭載することになるので、歩留まりが向上する。特に、MEMS素子を搭載して高周波回路を構成するような集積回路基板に対する検査においては特に威力を発揮する。   According to the present invention, the inspection element including the rigid inspection connection portion is brought into contact with the electrode pad of the integrated circuit substrate on which the MEMS element is to be mounted, so that it is electrically the same as the state in which the MEMS element is mounted. The state can be reproduced. Therefore, the integrated circuit board can be correctly inspected. Since the integrated circuit board itself is inspected in advance and the MEMS element is mounted on the integrated circuit board that has passed the inspection, the yield is improved. In particular, it is particularly effective in the inspection of an integrated circuit substrate in which a MEMS element is mounted to constitute a high-frequency circuit.

本発明の第1実施形態に係る集積回路基板用検査装置を模式的に示す図である。1 is a diagram schematically showing an integrated circuit board inspection apparatus according to a first embodiment of the present invention. 図1に示す検査用素子、MEMS素子と集積回路基板との大きさの関係を示しており、(A)は集積回路基板にMEMS素子が搭載されている場合、(B)及び(C)は集積回路基板に検査用素子が接続されている場合で、(B)はOKの場合、(C)はNGの場合をそれぞれ示す模式図である。FIG. 2 shows the size relationship between the inspection element, the MEMS element, and the integrated circuit substrate shown in FIG. 1, where (A) shows a case where the MEMS element is mounted on the integrated circuit substrate, and (B) and (C) show FIG. 5 is a schematic diagram showing a case where an inspection element is connected to the integrated circuit board, where (B) is OK and (C) is NG. 本発明の第2実施形態に係る集積回路基板用検査装置を模式的に示す図である。It is a figure which shows typically the test | inspection apparatus for integrated circuit boards which concerns on 2nd Embodiment of this invention. 図1に示す集積回路基板用検査装置による検査方法を模式的に示す図である。It is a figure which shows typically the inspection method by the integrated circuit board inspection apparatus shown in FIG. 本発明の第4実施形態に係る集積回路基板用検査装置を模式的に示す図である。It is a figure which shows typically the integrated circuit board inspection apparatus which concerns on 4th Embodiment of this invention. 本発明の第5実施形態に係る集積回路基板用検査装置を模式的に示す図である。It is a figure which shows typically the test | inspection apparatus for integrated circuit boards which concerns on 5th Embodiment of this invention. 図6に示す集積回路基板にMEMS素子が搭載されている様子を模式的に示す図である。It is a figure which shows typically a mode that the MEMS element is mounted in the integrated circuit board shown in FIG. 本発明の第6実施形態に係る集積回路基板用検査装置を模式的に示す図である。It is a figure which shows typically the inspection apparatus for integrated circuit boards which concerns on 6th Embodiment of this invention. MEMS素子が正方形のコイルである場合において、検査用素子と第1の弾性部材、第2の支持部材との距離をどのように決定すべきかを説明するための説明図であり、(A)はモデル設定の状態を示す図、(B)はZ軸方向の距離に対する磁場強度の変化を示す図、(C)はXY平面におけるコイルの一辺からの距離に対する磁場強度の変化を示す図である。When a MEMS element is a square coil, it is explanatory drawing for demonstrating how the distance of a test | inspection element, a 1st elastic member, and a 2nd supporting member should be determined, (A) The figure which shows the state of a model setting, (B) is a figure which shows the change of the magnetic field intensity with respect to the distance of a Z-axis direction, (C) is a figure which shows the change of the magnetic field intensity with respect to the distance from the one side of a coil in XY plane. 本発明の第7実施形態に係る集積回路基板用検査装置を示し、(A)は模式的な断面図、(B)は底面図である。The integrated circuit board inspection apparatus which concerns on 7th Embodiment of this invention is shown, (A) is typical sectional drawing, (B) is a bottom view. 図10に示す第7実施形態に係る集積回路基板用検査装置に関する一ユニットを示し、(A)は底面図、(B)はD−D線に沿う断面図である。FIGS. 10A and 10B show a unit related to the integrated circuit board inspection apparatus according to the seventh embodiment shown in FIG. 10. FIG. 10A is a bottom view, and FIG. 図10に示す第7実施形態に係る集積回路基板用検査装置を示し、(A)はA−A線に沿う断面図、(B)はB−B線に沿う断面図、(C)はC−C線に沿う断面図である。FIG. 10 shows an inspection apparatus for an integrated circuit board according to the seventh embodiment shown in FIG. 10, wherein (A) is a cross-sectional view taken along line AA, (B) is a cross-sectional view taken along line BB, and (C) is C It is sectional drawing which follows the -C line. 第7実施形態に係る集積回路基板用検査装置の作製工程を模式的に示す図である。It is a figure which shows typically the manufacturing process of the test | inspection apparatus for integrated circuit boards which concerns on 7th Embodiment. 図13に示す作製工程の続きを示す図である。FIG. 14 is a diagram showing a continuation of the manufacturing process shown in FIG. 13. 図14に示す作製工程の続きを示す図である。It is a figure which shows the continuation of the preparation process shown in FIG. 図15に示す作製工程の続きを示す図である。FIG. 16 is a diagram showing a continuation of the manufacturing process shown in FIG. 15. 図1に示す検査用素子の具体的な第一の構成を示す図であり、(A)は下斜め方向から見た斜視図、(B)は底面図である。It is a figure which shows the specific 1st structure of the test | inspection element shown in FIG. 1, (A) is the perspective view seen from the downward diagonal direction, (B) is a bottom view. 図1に示す検査用素子の具体的な第二の構成を示す図であり、(A)は下斜め方向から見た斜視図、(B)は底面図である。It is a figure which shows the concrete 2nd structure of the test | inspection element shown in FIG. 1, (A) is the perspective view seen from the downward diagonal direction, (B) is a bottom view. 図18に示すような検査用接続部を有する集積回路基板用装置を示し、(A)は平面図、(B)は側面図、(C)及び(D)は正面図である。FIG. 18 shows an integrated circuit board device having an inspection connecting portion as shown in FIG. 18, wherein (A) is a plan view, (B) is a side view, and (C) and (D) are front views. (A)乃至(F)は検査用素子の各種の変形例を模式的に示す底面図である。(A) thru | or (F) is a bottom view which shows typically the various modifications of the element for a test | inspection. 本発明の各実施形態において検査用素子と集積回路基板との関係を説明するための模式図であり、(A)はMEMS素子の平面図、(B)はMEMS素子の側面図、(C)は具体的な第1の例における検査用素子と集積回路基板との関係を示し、(D)は具体的な第2の例における検査用素子と集積回路基板との関係を示す図である。It is a schematic diagram for demonstrating the relationship between the element for a test | inspection and an integrated circuit board in each embodiment of this invention, (A) is a top view of a MEMS element, (B) is a side view of a MEMS element, (C) FIG. 4A shows the relationship between the testing element and the integrated circuit board in the specific first example, and FIG. 4D shows the relationship between the testing element and the integrated circuit board in the specific second example. 本発明の各実施形態において検査用素子と押圧手段との関係を模式的に示し、(A)は側面図、(B)は底面図である。In each embodiment of the present invention, the relation between an inspection element and pressing means is typically shown, (A) is a side view, and (B) is a bottom view. 従来の機能デバイスを模式的に示す図である。It is a figure which shows the conventional functional device typically.

以下図面を参照しながら、本発明の実施形態について説明する。本発明の各実施形態における集積回路基板用検査装置は、例えば図23を示して前述した集積回路基板110をMEMS素子120が搭載される前に検査するためのものである。なお、集積回路基板110及びMEMS素子120については前述した場合と同じである。
(第1実施形態)
図1は、本発明の第1実施形態に係る集積回路基板用検査装置を模式的に示している。集積回路基板用検査装置10は集積回路基板110を検査するものである。集積回路基板110は表面に複数の、図示の場合では二つの電極パッド111A,111Bを有している。Siなどの基板上への薄膜形成とエッチングなどの微細加工とを経て、集積回路基板110には複数の回路素子112が配線パターンにより接続されている。図示の場合では回路素子112として増幅素子が模式的に示してある。MEMS素子120における接続用電極が電極パッド111A,111Bにそれぞれ接続され、集積回路基板110内の回路素子112とMEMS素子120とが接続して集積回路が形成され、MEMS素子120を搭載した集積回路基板110は所定の機能を発揮する(図23参照)。MEMS素子120は、集積回路基板110に搭載された状態において集積回路基板110と対向する面に突出して電極部(接続用電極とも呼ぶ。)121A,121Bを備えている。MEMS素子120は、本実施形態では抵抗、コイル、コンデンサの何れかを含む受動素子を有しているものとするが、他の回路素子を含んでいてもよい。
Embodiments of the present invention will be described below with reference to the drawings. The integrated circuit board inspection apparatus in each embodiment of the present invention is for inspecting the integrated circuit board 110 described above with reference to FIG. 23 before the MEMS element 120 is mounted, for example. The integrated circuit substrate 110 and the MEMS element 120 are the same as those described above.
(First embodiment)
FIG. 1 schematically shows an inspection apparatus for an integrated circuit board according to a first embodiment of the present invention. The integrated circuit board inspection apparatus 10 inspects the integrated circuit board 110. The integrated circuit board 110 has a plurality of electrode pads 111A and 111B in the illustrated case on the surface. A plurality of circuit elements 112 are connected to the integrated circuit substrate 110 by a wiring pattern through thin film formation on a substrate such as Si and fine processing such as etching. In the illustrated case, an amplifying element is schematically shown as the circuit element 112. An integrated circuit in which the connection electrodes in the MEMS element 120 are connected to the electrode pads 111A and 111B, the circuit element 112 in the integrated circuit substrate 110 and the MEMS element 120 are connected to form an integrated circuit, and the MEMS element 120 is mounted. The substrate 110 exhibits a predetermined function (see FIG. 23). The MEMS element 120 includes electrode portions (also referred to as connection electrodes) 121 </ b> A and 121 </ b> B that protrude from the surface facing the integrated circuit substrate 110 when mounted on the integrated circuit substrate 110. In the present embodiment, the MEMS element 120 has a passive element including any of a resistor, a coil, and a capacitor, but may include other circuit elements.

集積回路基板用検査装置10は、外部端子として剛性を有する複数の検査用接続部12A,12Bを含む検査用素子12と、集積回路基板110の表面に設けられている電極パッド111A,111Bに検査用接続部12A,12Bを押圧する押圧手段16とを含んでいる。ここで、検査用素子12は、押圧手段16が検査用素子12を電極パッド111A,111Bに押圧している状態で検査用素子12と集積回路基板110における集積回路とで形成される回路と、MEMS素子120が集積回路基板110に搭載されたときに集積回路とMEMS素子120とで形成される回路と、等価回路として同一となるよう、構成されている。つまり、集積回路基板110上に検査用素子12が押圧手段16により押圧されたとき、集積回路基板110における集積回路と検査用素子12中の素子とで形成される回路が、浮遊容量、損失の発生も含めて、集積回路基板110にMEMS素子120が搭載されたときに形成される回路と、等価回路として同一である。   The integrated circuit board inspection apparatus 10 inspects the inspection element 12 including a plurality of inspection connection portions 12A and 12B having rigidity as external terminals and the electrode pads 111A and 111B provided on the surface of the integrated circuit board 110. And pressing means 16 for pressing the connecting portions 12A and 12B. Here, the inspection element 12 includes a circuit formed by the inspection element 12 and the integrated circuit on the integrated circuit substrate 110 in a state where the pressing unit 16 presses the inspection element 12 against the electrode pads 111A and 111B. When the MEMS element 120 is mounted on the integrated circuit substrate 110, the circuit formed by the integrated circuit and the MEMS element 120 is configured to be the same as an equivalent circuit. That is, when the testing element 12 is pressed on the integrated circuit board 110 by the pressing means 16, the circuit formed by the integrated circuit on the integrated circuit board 110 and the elements in the testing element 12 has a stray capacitance and loss. Including the occurrence, the circuit formed when the MEMS element 120 is mounted on the integrated circuit substrate 110 is the same as an equivalent circuit.

例えば、検査用素子12が、MEMS素子120と電気的に等価な二端子回路を含んでいる場合が当てはまる。ここに、「電気的に等価」とは、MEMS素子120が集積回路基板110に搭載されたときと、検査用素子12が支持なしで集積回路の電極パッド111A,111Bと検査用接続部12A,12Bとがそれぞれ接触した場合とで、電気的に等価な特性を有することを言う。即ち、検査用素子12とMEMS素子120とが構造、寸法、材質の点で同一である場合に理想的な等価な特性を有することになる。   For example, the case where the test element 12 includes a two-terminal circuit that is electrically equivalent to the MEMS element 120 is applicable. Here, “electrically equivalent” means that when the MEMS element 120 is mounted on the integrated circuit board 110 and the test element 12 is not supported, the electrode pads 111A and 111B of the integrated circuit and the test connection portion 12A, It is said that it has an electrically equivalent characteristic when it contacts 12B. In other words, when the inspection element 12 and the MEMS element 120 are the same in terms of structure, dimensions, and material, they have ideal equivalent characteristics.

以下詳細に説明すると、図1に模式的に示すように、集積回路基板110を載置するステージ11と、検査用接続部12A,12Bを含む検査用素子12と、検査用素子12のうち集積回路基板110と対向しない側に設けられる支持手段としての支持部材13と、検査用接続部12A,12Bを集積回路基板110の電極パッド111A,111Bに押圧する弾性手段としての弾性部材14と、弾性部材14を移動可能に支持する可動式支持部15と、を含んでいる。   More specifically, as schematically shown in FIG. 1, a stage 11 on which an integrated circuit board 110 is placed, an inspection element 12 including inspection connection portions 12A and 12B, and an integrated element among the inspection elements 12 are integrated. A support member 13 as a support means provided on the side not facing the circuit board 110, an elastic member 14 as an elastic means for pressing the test connection portions 12A and 12B against the electrode pads 111A and 111B of the integrated circuit board 110, and an elastic member And a movable support portion 15 that movably supports the member 14.

ここで、押圧手段16は、支持部材13と弾性部材14との組み合わせにより構成されている。検査用素子12は、MEMS素子120と電気的に同一の構成及び大きさを有していればよい。MEMS素子120が、電気導通路としてコイル素子とその両側に取り付けられている検査用接続部12A,12Bとを備え、その電気導通路の周りの絶縁体がMEMS素子120におけるそれと略同一の誘電率及び透磁率を有する場合、検査用素子12における絶縁体の大きさは電気導通路に対して外部からの電気的・磁気的な影響が無視できる範囲であればよく、必ずしも、検査用素子12における絶縁体の形状及び寸法が、MEMS素子120における絶縁体の形状及び寸法と同一である必要はない。   Here, the pressing means 16 is configured by a combination of the support member 13 and the elastic member 14. The inspection element 12 only needs to have the same configuration and size as the MEMS element 120. The MEMS element 120 includes a coil element as an electrical conduction path and test connection portions 12A and 12B attached to both sides of the coil element, and an insulator around the electrical conduction path has substantially the same dielectric constant as that of the MEMS element 120. In the case of having the magnetic permeability, the size of the insulator in the test element 12 may be in a range in which the external electrical and magnetic influence on the electrical conduction path can be ignored. The shape and size of the insulator need not be the same as the shape and size of the insulator in the MEMS element 120.

以下、各構成要素について詳細に説明する。   Hereinafter, each component will be described in detail.

ステージ11は、集積回路基板110が動かないように載置できるものが好ましく、例えば図示するようにステージ11に窪みを有しておりその窪みに集積回路基板110の下側一部が収容されるのが好ましい。ステージ11は、集積回路基板110を載置したままステージ11それ自体を水平面に平行にスライドしたり、上下動したりするように移動可能なものが好ましい。   The stage 11 is preferably one that can be mounted so that the integrated circuit board 110 does not move. For example, the stage 11 has a depression as shown in the figure, and the lower part of the integrated circuit board 110 is accommodated in the depression. Is preferred. The stage 11 is preferably movable so that the stage 11 itself can be slid in parallel to a horizontal plane or moved up and down while the integrated circuit board 110 is placed thereon.

検査用素子12は、集積回路基板110を検査した後に搭載されるべきMEMS素子120と電気的に等価な二端子回路を有しており、検査用接続部12A,12Bがリジッド(rigid)な、即ち曲がり難い、堅直なものである。このように、検査用接続部12A,12Bは剛性を有している。剛性は、例えば数μNの力に対して変形しないことを意味する。   The inspection element 12 has a two-terminal circuit that is electrically equivalent to the MEMS element 120 to be mounted after inspecting the integrated circuit board 110, and the inspection connection portions 12A and 12B are rigid. In other words, it is hard to bend and is solid. As described above, the inspection connecting portions 12A and 12B have rigidity. Rigidity means, for example, that it does not deform for a force of several μN.

押圧手段16は、支持部材13と弾性部材14からなることで弾性を有する。支持部材13は、検査用素子12の表面側、即ち検査用接続部12A,12Bとは逆側に設けられており、エポキシ樹脂などの絶縁体からなる。   The pressing means 16 has elasticity by being composed of the support member 13 and the elastic member 14. The support member 13 is provided on the surface side of the inspection element 12, that is, on the side opposite to the inspection connection portions 12A and 12B, and is made of an insulator such as an epoxy resin.

弾性部材14は、例えば板バネなどのバネ材からなる。図1に模式的に示すように、弾性部材14の一端が支持部材13を介在して検査用素子12に取り付けられ、弾性部材14の他端が支持部としての可動式支持部15に取り付けられている。弾性部材14は、絶縁性材料からなっても導電性材料からなってもよい。弾性部材14が絶縁体でなる支持部材13を介在して検査用素子12に取り付けられているからである。   The elastic member 14 is made of a spring material such as a leaf spring, for example. As schematically shown in FIG. 1, one end of the elastic member 14 is attached to the inspection element 12 with the support member 13 interposed, and the other end of the elastic member 14 is attached to the movable support portion 15 as a support portion. ing. The elastic member 14 may be made of an insulating material or a conductive material. This is because the elastic member 14 is attached to the inspection element 12 via a support member 13 made of an insulator.

支持部としての可動式支持部15は、少なくとも検査用素子12をステージ11側及びその逆側の方向に移動できるものであればよく、二次元方向、三次元方向に移動可能なものが好ましい。   The movable support portion 15 as the support portion is not particularly limited as long as it can move at least the inspection element 12 in the direction of the stage 11 and the opposite side, and preferably movable in the two-dimensional direction and the three-dimensional direction.

次に、集積回路基板用検査装置10による集積回路基板110の検査方法について説明する。先ず、ステップ1として、検査すべき集積回路基板110をステージ11上に載せて固定する。   Next, a method for inspecting the integrated circuit board 110 by the integrated circuit board inspection apparatus 10 will be described. First, as step 1, the integrated circuit board 110 to be inspected is placed on the stage 11 and fixed.

ステップ2として、ステージ11をXY方向に移動して検査用素子12を集積回路基板110の上方に移動し、検査用素子12における検査用接続部12A,12Bをそれぞれ集積回路基板110における電極パッド111A,111Bの上方に位置合わせする。   In step 2, the stage 11 is moved in the X and Y directions to move the inspection element 12 above the integrated circuit board 110, and the inspection connection portions 12A and 12B in the inspection element 12 are respectively connected to the electrode pads 111A in the integrated circuit board 110. , 111B.

ステップ3として、可動式支持部15を−Z方向であるステージ11側に下降し、検査用素子12の検査用接続部12A,12Bをそれぞれ集積回路基板110の電極パッド111A,111Bに接触し、さらに可動式支持部15を下降する。すると、弾性部材14が弾性変形しつつ検査用接続部12A,12Bがそれぞれ集積回路基板110における電極パッド111A,111Bに押圧する。その際、検査用素子12の検査用接続部12A,12Bは弾性部材14の復元力により電極パッド111A,111Bの表面の酸化膜を突き破り、検査用素子12が電極パッド111A,111Bに電気的に接続する。この状態において、検査用接続部12A,12Bを変形させないでMEMS素子120が集積回路基板110に搭載された状態に形成される回路網と等価回路として等しい回路網を形成する。   As Step 3, the movable support portion 15 is lowered to the stage 11 side in the −Z direction, and the inspection connection portions 12A and 12B of the inspection element 12 are brought into contact with the electrode pads 111A and 111B of the integrated circuit substrate 110, respectively. Further, the movable support portion 15 is lowered. Then, while the elastic member 14 is elastically deformed, the inspection connecting portions 12A and 12B are pressed against the electrode pads 111A and 111B on the integrated circuit board 110, respectively. At that time, the inspection connection portions 12A and 12B of the inspection element 12 break through the oxide film on the surface of the electrode pads 111A and 111B by the restoring force of the elastic member 14, and the inspection element 12 is electrically connected to the electrode pads 111A and 111B. Connecting. In this state, a circuit network equivalent to the circuit network formed in a state where the MEMS element 120 is mounted on the integrated circuit substrate 110 is formed without deforming the inspection connection portions 12A and 12B.

さらに、検査用素子12と集積回路基板110との電気的な接続の確実性を確保するために、ステップ4として、検査用素子12における検査用接続部12A,12Bが電極パッド111A,111Bに食い込んだ状態で、可動式支持部15をXY平面に平行な方向、例えばX方向に移動する。すると、検査用素子12がX方向に移動する。これにより、検査用素子12の検査用接続部12A,12Bが電極パッド111A,111Bの各表面に沿って摺動する。これにより、電極パッド111A,111Bの表面酸化膜に筋が形成され、検査用素子12と集積回路基板110との電気的な接続が確実となる。このステップ4については、電極パッド111A,111Bの表面酸化膜の状態や、ステップ3での電気的な不接続の蓋然性に応じてなされればよい。   Further, in order to ensure the reliability of the electrical connection between the test element 12 and the integrated circuit board 110, as step 4, the test connection portions 12A and 12B in the test element 12 bite into the electrode pads 111A and 111B. In this state, the movable support 15 is moved in a direction parallel to the XY plane, for example, in the X direction. Then, the inspection element 12 moves in the X direction. As a result, the inspection connecting portions 12A and 12B of the inspection element 12 slide along the surfaces of the electrode pads 111A and 111B. As a result, streaks are formed in the surface oxide films of the electrode pads 111A and 111B, and the electrical connection between the testing element 12 and the integrated circuit substrate 110 is ensured. Step 4 may be performed in accordance with the state of the surface oxide film of the electrode pads 111A and 111B and the probability of electrical disconnection in Step 3.

第1実施形態では、検査用素子12は集積回路基板110に搭載されるMEMS素子120と電気的に等価、例えば同じ構成及び大きさであるので、検査用素子12の集積回路基板110に対する浮遊容量C,誘導損失Loss及び渦電流損失Lossは、MEMS素子120が搭載されている状態の場合と同じであるため、MEMS素子120を搭載したときと同じ状態で集積回路基板110を検査することができる。   In the first embodiment, since the testing element 12 is electrically equivalent to, for example, the same configuration and size as the MEMS element 120 mounted on the integrated circuit board 110, the stray capacitance of the testing element 12 with respect to the integrated circuit board 110. Since C, the induction loss Loss, and the eddy current loss Loss are the same as when the MEMS element 120 is mounted, the integrated circuit board 110 can be inspected in the same state as when the MEMS element 120 is mounted. .

特に、MEMS素子120と集積回路基板110とで例えば発振回路などの高周波回路を形成するような場合であって、検査用素子12は、絶縁体から成る支持部材13を介在して弾性部材14により支持されているので、その高周波回路は弾性部材14、支持部材13からの影響を無視できる。つまり、高周波特性、特に共振周波数が設計値と異ならない。   In particular, when the MEMS element 120 and the integrated circuit substrate 110 form a high-frequency circuit such as an oscillation circuit, the testing element 12 is supported by the elastic member 14 with a support member 13 made of an insulator interposed. Since the high frequency circuit is supported, the influence from the elastic member 14 and the support member 13 can be ignored. That is, the high frequency characteristics, particularly the resonance frequency, is not different from the design value.

特に、検査用素子12における検査用接続部12A,12Bが変形し難いリジッドであるため、検査用接続部12A,12Bが弾性部材14による復元力を受けても、検査用接続部12A,12Bの形状は変化しない。つまり、検査用素子12と集積回路基板110との間での電流経路の形が変わらないので、集積回路基板110の検査をモノリシックに作製した状態と同様の状態で行える。   In particular, since the inspection connection portions 12A and 12B in the inspection element 12 are rigid and difficult to deform, even if the inspection connection portions 12A and 12B receive a restoring force by the elastic member 14, the inspection connection portions 12A and 12B The shape does not change. That is, since the shape of the current path between the testing element 12 and the integrated circuit board 110 does not change, the test of the integrated circuit board 110 can be performed in a state similar to a state in which the integrated circuit board 110 is manufactured monolithically.

これらのことから、検査用素子12の回路素子、例えばコイルなどの受動素子と集積回路基板110内の集積回路とで構成される回路が、例えば1GHz前後を超えるようなGHz帯の高周波回路である場合においても、集積回路基板110を正確に検査することができる。   For these reasons, the circuit element of the inspection element 12, for example, a circuit composed of a passive element such as a coil and an integrated circuit in the integrated circuit substrate 110 is a high frequency circuit in the GHz band that exceeds, for example, about 1 GHz. Even in this case, the integrated circuit board 110 can be accurately inspected.

図1に示す集積回路基板用検査装置10では、押圧手段16が検査用素子12を電極パッド111A,111Bに押圧している状態で検査用素子12と集積回路基板110における集積回路とで形成される回路が、MEMS素子120が集積回路基板110に搭載されたときに集積回路とMEMS素子とで形成される回路と等価回路として同一となるよう、検査用素子12が構成されており、検査用接続部12A,12Bが剛性を有し、押圧手段16が弾性を有している。例えば、検査用素子12は、実際に集積回路基板110に検査後に搭載されるべきMEMS素子120と電気的に等価な二端子回路を含んでいる。よって、MEMS素子120を集積回路基板110に搭載してMEMS素子120の電極部を集積回路基板110の電極パッド111A,111Bに接続した状態を作り出せる。   The integrated circuit board inspection apparatus 10 shown in FIG. 1 is formed by the inspection element 12 and the integrated circuit on the integrated circuit board 110 in a state where the pressing means 16 presses the inspection element 12 against the electrode pads 111A and 111B. The inspection element 12 is configured so that the circuit to be the same as the circuit formed by the integrated circuit and the MEMS element when the MEMS element 120 is mounted on the integrated circuit substrate 110 is equivalent to the circuit formed by the integrated circuit board 110. The connecting portions 12A and 12B have rigidity, and the pressing means 16 has elasticity. For example, the inspection element 12 includes a two-terminal circuit that is electrically equivalent to the MEMS element 120 to be actually mounted on the integrated circuit board 110 after the inspection. Therefore, it is possible to create a state in which the MEMS element 120 is mounted on the integrated circuit board 110 and the electrode portions of the MEMS element 120 are connected to the electrode pads 111A and 111B of the integrated circuit board 110.

この点について詳細に説明する。図2は、図1に示す検査用素子12、MEMS素子120と集積回路基板110との関係を示しており、(A)は集積回路基板110にMEMS素子120が搭載されている場合、(B)は集積回路基板110に検査用素子12が接続されている場合を示す模式図である。図2(A)乃至(C)に示す集積回路基板110は、図1における集積回路基板110に対応するものであり、集積回路基板110の表面側にはMEMS素子120と接続される電極パッド111A,111Bのほか配線及びLSI素子(以下、「配線・素子111C」と表記する)が配置されている。集積回路基板110の最表面層113は絶縁層である。   This point will be described in detail. FIG. 2 shows the relationship between the test element 12, the MEMS element 120, and the integrated circuit board 110 shown in FIG. 1. FIG. 2A shows a case where the MEMS element 120 is mounted on the integrated circuit board 110. ) Is a schematic diagram showing a case where the testing element 12 is connected to the integrated circuit board 110. An integrated circuit board 110 shown in FIGS. 2A to 2C corresponds to the integrated circuit board 110 in FIG. 1, and an electrode pad 111 </ b> A connected to the MEMS element 120 is provided on the surface side of the integrated circuit board 110. 111B, wiring and LSI elements (hereinafter referred to as “wiring / element 111C”) are arranged. The outermost surface layer 113 of the integrated circuit substrate 110 is an insulating layer.

図2(A)に示すように、集積回路基板110はMEMS素子120が搭載されるとMEMS素子120と回路素子との間には浮遊容量C、誘導損失L1及び渦電流損失L2が生じる。よって、集積回路基板110における集積回路及びMEMS素子120における回路素子はこれらの浮遊容量C、誘導損失L1及び渦電流損失L2を加味して回路設計され、所望の高周波特性を有している。   As shown in FIG. 2A, when the MEMS element 120 is mounted on the integrated circuit substrate 110, stray capacitance C, induction loss L1, and eddy current loss L2 are generated between the MEMS element 120 and the circuit element. Therefore, the integrated circuit in the integrated circuit substrate 110 and the circuit element in the MEMS element 120 are designed in consideration of the stray capacitance C, the induction loss L1, and the eddy current loss L2, and have desired high frequency characteristics.

検査用素子12が図2(B)に示すようにMEMS素子120と同一の構成及び寸法を有しており、その検査用素子12が集積回路基板110に接続される場合においては、検査用素子12と集積回路基板110との間には、図2(A)に示す場合と同様に浮遊容量C、誘導損失L1及び渦電流損失L2が発生する。従って、MEMS素子120搭載時と同じ状況下で集積回路基板110を検査することができる。   When the inspection element 12 has the same configuration and dimensions as the MEMS element 120 as shown in FIG. 2B and the inspection element 12 is connected to the integrated circuit substrate 110, the inspection element As in the case shown in FIG. 2A, stray capacitance C, induction loss L1, and eddy current loss L2 occur between 12 and the integrated circuit substrate 110. Therefore, the integrated circuit board 110 can be inspected under the same situation as when the MEMS element 120 is mounted.

図2(B)に示す場合とは異なり、図2(C)に示すように、検査用素子17がMEMS素子120と同様の回路を有していても寸法が異なり図示するように大きい場合、検査用素子17が集積回路基板110に接続されると、検査用素子17と集積回路基板110との間には、図2(A)に示す場合とは異なる浮遊容量C’、誘導損失L1’及び渦電流損失L2’が生じる。つまり、MEMS素子120の搭載時と同じ状況下で集積回路基板110を検査することができない。   Unlike the case shown in FIG. 2 (B), as shown in FIG. 2 (C), even if the testing element 17 has the same circuit as the MEMS element 120, the dimensions are different and it is large as shown. When the inspection element 17 is connected to the integrated circuit board 110, a stray capacitance C ′ and an induction loss L1 ′ different from those shown in FIG. 2A are provided between the inspection element 17 and the integrated circuit board 110. And eddy current loss L2 ′ occurs. That is, the integrated circuit board 110 cannot be inspected under the same situation as when the MEMS element 120 is mounted.

ここで、図2(B)に示されるように、検査用素子12,17の集積回路基板110と逆側に絶縁体である支持部材13が細長くかつ鉛直方向に延びており、支持部材13の一端が可動式支持部15に弾性部材14としてのバネ部材で接続されている。支持部材13は細長いので、検査用素子12に流れる電流が弾性部材14、支持部材13により変化しない。   Here, as shown in FIG. 2B, a support member 13, which is an insulator, is elongated on the opposite side of the integrated circuit board 110 of the test elements 12 and 17 and extends in the vertical direction. One end is connected to the movable support 15 by a spring member as the elastic member 14. Since the support member 13 is elongated, the current flowing through the inspection element 12 is not changed by the elastic member 14 and the support member 13.

以上のように本発明の第1実施形態によれば、検査用素子12は実際に集積回路基板110に検査後搭載されるべきMEMS素子120と電気的、構造的に等価な構成を含んでいるため、MEMS素子120を集積回路基板110に搭載してMEMS素子120の電極部を集積回路基板110の電極パッド111A,111Bに接続した状態となり得る。   As described above, according to the first embodiment of the present invention, the testing element 12 includes a configuration that is electrically and structurally equivalent to the MEMS element 120 to be actually mounted on the integrated circuit board 110 after the testing. Therefore, the MEMS element 120 can be mounted on the integrated circuit board 110 and the electrode portion of the MEMS element 120 can be connected to the electrode pads 111A and 111B of the integrated circuit board 110.

加えて、検査用素子12の集積回路基板110側にはリジッドな検査用接続部12A,12Bが突出しているため、検査用素子12を集積回路基板110に押し付け、検査用接続部12A,12Bを集積回路基板110における電極パッド111A,111Bに押し当てても、検査用接続部12A,12Bは座屈したり、屈曲したりしない。つまり、検査用素子12の集積回路基板110への押圧により、検査用素子12内の回路素子と集積回路基板110内の回路素子とが配線パターンで接続されて形成される回路網と、MEMS素子120を集積回路基板110に搭載して形成される回路網とは、等価回路として、同一となる。   In addition, since the rigid inspection connection portions 12A and 12B protrude from the inspection element 12 on the side of the integrated circuit board 110, the inspection element 12 is pressed against the integrated circuit board 110, and the inspection connection portions 12A and 12B are connected. Even when pressed against the electrode pads 111A and 111B on the integrated circuit substrate 110, the inspection connecting portions 12A and 12B do not buckle or bend. That is, a circuit network formed by connecting circuit elements in the inspection element 12 and circuit elements in the integrated circuit board 110 by a wiring pattern by pressing the inspection element 12 against the integrated circuit board 110, and a MEMS element A circuit network formed by mounting 120 on the integrated circuit board 110 is the same as an equivalent circuit.

加えて、集積回路基板110が図1に示すように回路素子112として増幅素子及びコンデンサを含んでおり、MEMS素子120がコイルを含んで、集積回路基板110とMEMS素子120とで発振回路などの高周波回路が構成される場合を想定すると、検査用素子12はMEMS素子120と同様コイルを含む二端子回路を含んでいるので、検査用素子12が集積回路基板110に押圧して形成される高周波回路は、集積回路基板110にMEMS素子120が搭載されて形成される高周波回路と同一になる。つまり、検査用接続部12A,12Bが変形しないので、周波数特性による影響を受けずに、設計値と検査値とを比較できる。   In addition, the integrated circuit board 110 includes an amplifying element and a capacitor as the circuit element 112 as shown in FIG. 1, and the MEMS element 120 includes a coil, and the integrated circuit board 110 and the MEMS element 120 form an oscillation circuit or the like. Assuming the case where a high-frequency circuit is configured, since the testing element 12 includes a two-terminal circuit including a coil like the MEMS element 120, the testing element 12 is formed by pressing against the integrated circuit substrate 110. The circuit is the same as a high-frequency circuit formed by mounting the MEMS element 120 on the integrated circuit substrate 110. That is, since the inspection connecting portions 12A and 12B are not deformed, the design value and the inspection value can be compared without being influenced by the frequency characteristics.

(第2実施形態)
図3は、本発明の第2実施形態に係る集積回路基板用検査装置20を模式的に示している。図3に示す第2実施形態は、検査用素子12における検査用接続部12A,12Bの先端が尖っていない点で、図1に示す第1実施形態と異なる。集積回路基板110の電極パッド111A,111Bが種類の異なる金属層で積層されてなり、金属層のうち最表面層111Dが例えばAuなどの酸化し難い金属で構成されている。この場合、検査用接続部12A,12Bが集積回路基板110における電極パッド111A,111Bに食い込ませなくても検査用接続部12A,12Bを電極パッド111A,111Bの最表面層111Dに接触させるだけで、電気的に接続することができるからである。
(Second Embodiment)
FIG. 3 schematically shows an integrated circuit board inspection apparatus 20 according to the second embodiment of the present invention. The second embodiment shown in FIG. 3 is different from the first embodiment shown in FIG. 1 in that the tips of the test connection portions 12A and 12B in the test element 12 are not sharp. The electrode pads 111A and 111B of the integrated circuit substrate 110 are laminated with different types of metal layers, and the outermost surface layer 111D of the metal layers is made of a metal that is difficult to oxidize, such as Au. In this case, even if the inspection connection portions 12A and 12B do not bite into the electrode pads 111A and 111B in the integrated circuit substrate 110, the inspection connection portions 12A and 12B are merely brought into contact with the outermost surface layer 111D of the electrode pads 111A and 111B. This is because they can be electrically connected.

本発明の第2実施形態によれば、図1に示した第1実施形態と同様、集積回路基板110を正しく検査することができる。しかも、第1実施形態と異なり、検査用素子12の各検査用接続部12A,12Bを集積回路基板110の電極パッド111A,111Bに接触させるだけでよく、電極パッド111A,111Bの最表面層111Dに検査用接続部12A,12Bを食い込ませる必要がないため、検査用接続部12A,12Bの先端を例えば角錐、円錐のように尖らすことが不要で、かつ、検査用素子12を集積回路基板110の表面に沿って移動させる必要もない。よって、検査用素子12の構造を単純化でき、かつプローブで電極パッド111A,111Bを擦る必要がないから集積回路基板110の検査に要する時間が短縮できる。この第2実施形態に係る集積回路基板用検査装置20は、MEMS素子120の電極部がMEMS素子120における集積回路基板110との対向面から突出していないようなMEMS素子120を搭載する集積回路基板110を検査対象とする場合などに、特に有効である。   According to the second embodiment of the present invention, the integrated circuit board 110 can be correctly inspected as in the first embodiment shown in FIG. In addition, unlike the first embodiment, the inspection connection portions 12A and 12B of the inspection element 12 need only be brought into contact with the electrode pads 111A and 111B of the integrated circuit substrate 110, and the outermost surface layer 111D of the electrode pads 111A and 111B. Therefore, it is not necessary to sharpen the tips of the inspection connection portions 12A and 12B like, for example, a pyramid or a cone, and the inspection element 12 is integrated circuit board. There is also no need to move along the surface of 110. Therefore, the structure of the testing element 12 can be simplified, and the time required for testing the integrated circuit board 110 can be shortened because it is not necessary to rub the electrode pads 111A and 111B with a probe. The integrated circuit board inspection apparatus 20 according to the second embodiment includes an integrated circuit board on which the MEMS element 120 is mounted such that the electrode portion of the MEMS element 120 does not protrude from the surface of the MEMS element 120 facing the integrated circuit board 110. This is particularly effective when 110 is an inspection target.

(第3実施形態)
図4は、図1に示す集積回路基板用検査装置10による検査方法を模式的に示す図である。図4に示すように、集積回路基板110において、電極パッド111A,111Bの表面に窪み111Eをそれぞれ設けている点で図1に示す場合とは異なる。電極パッド111A,111Bの窪み111Eは、集積回路基板用検査装置10における検査用素子12の検査用接続部12A,12Bの先端が食い込むようにエッチング等により形成される。電極パッド111A,111Bに窪み111Eが設けられているので、検査用素子12と集積回路基板110との距離が小さくなると、検査用接続部12A,12Bが自ら電極パッド111A,111Bの窪み111Eに入り込む。このセルフアライメントにより、検査用接続部12A,12Bと電極パッド111A,111Bとの位置合わせが容易となる。さらに、検査用接続部12A,12Bと電極パッド111A,111Bとの接触面積が大きくなるため、接触抵抗の低減を図ることができる。また、検査用接続部12A,12Bの先端部の形と大きさを窪み111Eの形と大きさと同じにすることによって、MEMS素子120が集積回路基板110上に搭載されたときと、検査用素子12が集積回路に接触している場合とで、全く同じ状況を再現できる。
(Third embodiment)
FIG. 4 is a diagram schematically showing an inspection method by the integrated circuit board inspection apparatus 10 shown in FIG. As shown in FIG. 4, the integrated circuit board 110 is different from the case shown in FIG. 1 in that a depression 111E is provided on the surface of the electrode pads 111A and 111B. The recesses 111E of the electrode pads 111A and 111B are formed by etching or the like so that the tips of the inspection connection portions 12A and 12B of the inspection element 12 in the integrated circuit board inspection apparatus 10 bite. Since the recesses 111E are provided in the electrode pads 111A and 111B, when the distance between the inspection element 12 and the integrated circuit substrate 110 is reduced, the inspection connection portions 12A and 12B themselves enter the recesses 111E of the electrode pads 111A and 111B. . This self-alignment facilitates the alignment between the inspection connecting portions 12A and 12B and the electrode pads 111A and 111B. Furthermore, since the contact area between the inspection connecting portions 12A and 12B and the electrode pads 111A and 111B is increased, the contact resistance can be reduced. Further, by making the shape and size of the tip end portions of the inspection connecting portions 12A and 12B the same as the shape and size of the recess 111E, when the MEMS element 120 is mounted on the integrated circuit substrate 110, and the inspection element The exact same situation can be reproduced when 12 is in contact with the integrated circuit.

(第4実施形態)
図5は、第4実施形態に係る集積回路基板用検査装置30を模式的に示す。集積回路基板用検査装置30で検査対象となる集積回路基板110には、集積回路内でGND配線となる電極パッド111Fが設けられている。図5に示す検査用素子33は、集積回路基板110内の集積回路と回路網を構成する検査用素子本体部32とパッケージ34で構成されている点で図1に示す場合と異なる。これは、検査対象となる集積回路基板110に搭載されるMEMS素子がMEM素子本体とパッケージとで構成されているため、検査用素子33をこの構成に対応させて同一の構造及び寸法を有するようにしている。つまり、検査用素子33はMEMS素子のパッケージと同一構造を有するパッケージ34を有しており、押圧手段16、具体的には弾性部材14の一端が検査用素子33におけるパッケージ34に取り付けられ、検査用素子本体部32がパッケージ34を介在して弾性部材14に支持されている。パッケージ34は、検査用素子本体部32を支持部34Aで取り付けられている上部34Bと、検査用素子本体部32の周りを離隔して覆う環状の側壁部34Cと、でなっている。つまりパッケージ34は上部34Bと側壁部34Cとで凹陥部34Dを設けており、GND接続用端子34Eが側壁部34Cに突出して設けられている。GND接続用端子34Eは、パッケージ34内の電気導通部(図示せず)に接続されている。検査用素子33、MEMS素子の何れの場合においてもパッケージ34はそれ自体が例えばシリコンのように導電性を有する材料で構成されていても良いし、例えばプラスチックのような絶縁物に例えば金属が堆積して構成されても良い。パッケージ34の電気導通部の形状はMEMS素子本体部32の全体を囲むように配置されていても良いし、一部を覆うように配置されていても良い。つまり、パッケージ34を含む検査用素子33は、集積回路基板110に接続された際、その集積回路基板110にパッケージを含むMEMS素子を搭載したときと同じ等価回路を構成できればよい。GND接続用端子34Eは尖り形状を有しており、集積回路基板110との対向面から検査用素子33における検査用接続部32A,32Bの先端と同じ高さに突出している。パッケージ34の上部34Bには支持部材13が配置され、支持部材13は弾性部材14に取り付けられている。パッケージ34の上部34Bは、支持部材13とは逆の凹陥部34D側に突出して支持部34Aが設けられており、支持部34Aには検査用素子本体部32が取り付けられている。
(Fourth embodiment)
FIG. 5 schematically shows an integrated circuit board inspection apparatus 30 according to the fourth embodiment. The integrated circuit board 110 to be inspected by the integrated circuit board inspection apparatus 30 is provided with an electrode pad 111F that becomes a GND wiring in the integrated circuit. The test element 33 shown in FIG. 5 is different from the case shown in FIG. 1 in that the test element 33 is composed of a test element main body 32 and a package 34 that form an integrated circuit and a circuit network in the integrated circuit board 110. This is because the MEMS element mounted on the integrated circuit board 110 to be inspected is composed of a MEM element body and a package, so that the inspection element 33 has the same structure and dimensions corresponding to this configuration. I have to. That is, the inspection element 33 has a package 34 having the same structure as the MEMS element package, and one end of the pressing means 16, specifically, the elastic member 14 is attached to the package 34 in the inspection element 33. The element main body 32 is supported by the elastic member 14 with the package 34 interposed therebetween. The package 34 includes an upper portion 34B to which the inspection element main body 32 is attached by a support portion 34A, and an annular side wall portion 34C that covers the inspection element main body 32 while being spaced apart. That is, the package 34 is provided with a recessed portion 34D between the upper portion 34B and the side wall portion 34C, and the GND connection terminal 34E is provided so as to protrude from the side wall portion 34C. The GND connection terminal 34E is connected to an electrical conduction portion (not shown) in the package 34. In either case of the inspection element 33 or the MEMS element, the package 34 may itself be made of a conductive material such as silicon, or a metal is deposited on an insulator such as plastic. May be configured. The shape of the electrical conduction portion of the package 34 may be disposed so as to surround the entire MEMS element main body portion 32, or may be disposed so as to cover a part thereof. In other words, the test element 33 including the package 34 may be configured to have the same equivalent circuit as when the MEMS element including the package is mounted on the integrated circuit board 110 when connected to the integrated circuit board 110. The GND connection terminal 34E has a pointed shape and protrudes from the surface facing the integrated circuit substrate 110 to the same height as the tips of the inspection connection portions 32A and 32B in the inspection element 33. A support member 13 is disposed on the upper portion 34B of the package 34, and the support member 13 is attached to the elastic member 14. The upper part 34B of the package 34 protrudes toward the recessed part 34D opposite to the support member 13, and is provided with a support part 34A. The inspection element main body part 32 is attached to the support part 34A.

集積回路基板用検査装置30によれば、検査用素子本体部32の検査用接続部32A,32Bが集積回路基板110の電極パッド111A,111Bに接続され、かつ、パッケージ33が検査用素子本体部32を覆ってGND接続用端子34Eが集積回路基板110の電極パッド111Fに接続された状態は、検査後の集積回路基板110にMEMS素子が搭載された状態と同じとなるので、正確な集積回路基板110の検査を行うことができる。   According to the integrated circuit board inspection apparatus 30, the inspection connection portions 32A and 32B of the inspection element main body 32 are connected to the electrode pads 111A and 111B of the integrated circuit board 110, and the package 33 is the inspection element main body. 32, the state where the GND connection terminal 34E is connected to the electrode pad 111F of the integrated circuit board 110 is the same as the state in which the MEMS element is mounted on the integrated circuit board 110 after the inspection. The substrate 110 can be inspected.

(第5実施形態)
図6は、第5実施形態に係る集積回路基板用検査装置40を模式的に示す。集積回路基板用検査装置40は、図6に示すように、検査用素子42の上層部に支持部材43が一体として構成されている点で他の実施形態と異なる。即ち、検査用素子42は絶縁性の支持部材43と検査用素子本体44とで構成される。この集積回路基板用検査装置40で検査対象となる集積回路基板110は、図7に示すように、MEMS素子130の表面側に支持部材43と同一の性質を有する絶縁体131が設けられて一体構成されている。第5実施形態に係る集積回路基板用検査装置40によれば、検査用素子42が支持部材43を予め組み込んで一体的に構成されているので、部品点数が少なくなり、集積回路基板用検査装置40の組立作業が容易になる。
(Fifth embodiment)
FIG. 6 schematically shows an integrated circuit board inspection apparatus 40 according to the fifth embodiment. As shown in FIG. 6, the integrated circuit board inspection apparatus 40 is different from the other embodiments in that a support member 43 is integrally formed on the upper layer portion of the inspection element 42. That is, the inspection element 42 includes an insulating support member 43 and an inspection element body 44. As shown in FIG. 7, the integrated circuit board 110 to be inspected by the integrated circuit board inspection apparatus 40 is provided with an insulator 131 having the same properties as the support member 43 on the surface side of the MEMS element 130. It is configured. According to the integrated circuit board inspection apparatus 40 according to the fifth embodiment, since the inspection element 42 is integrally configured by incorporating the support member 43 in advance, the number of components is reduced, and the integrated circuit board inspection apparatus is provided. Forty assembly operations are facilitated.

(第6実施形態)
次に、第1実施形態を前提とした第6実施形態を説明するが、第2乃至第5実施形態でも同様である。図8は、第6実施形態に係る集積回路基板用検査装置50を模式的に示す図である。集積回路基板用検査装置50は、支持部としての可動式支持部55に対して取り付けられる第1の弾性手段としての第1の弾性部材54と、第1の弾性部材54の先端に取り付けられた第1の支持手段としての第1の支持部材53と、第1の支持部材53に設けられている検査用素子52と、集積回路基板110を載置して固定するステージ51と、可動式支持部55に対して取り付けられる第2の弾性手段としての第2の弾性部材58と、第2の弾性部材58の先端に取り付けられる第2の支持手段としての第2の支持部材57と、第2の支持部材57にステージ51側に突出するよう取り付けられている複数のプローブ56と、複数のプローブ56を経由して集積回路基板110に対して駆動電力を供給して集積回路基板110からの出力信号を計測する検査用回路59と、を有している。
(Sixth embodiment)
Next, a sixth embodiment based on the first embodiment will be described, but the same applies to the second to fifth embodiments. FIG. 8 is a diagram schematically showing an integrated circuit board inspection apparatus 50 according to the sixth embodiment. The integrated circuit board inspection apparatus 50 is attached to the first elastic member 54 as the first elastic means attached to the movable support portion 55 as the support portion, and to the tip of the first elastic member 54. A first support member 53 as a first support means, an inspection element 52 provided on the first support member 53, a stage 51 on which the integrated circuit board 110 is placed and fixed, and a movable support A second elastic member 58 as a second elastic means attached to the portion 55, a second support member 57 as a second support means attached to the tip of the second elastic member 58, and a second The plurality of probes 56 attached to the support member 57 so as to protrude toward the stage 51, and the driving power is supplied to the integrated circuit board 110 via the plurality of probes 56 to output from the integrated circuit board 110. It has a testing circuit 59 for measuring the signal.

集積回路基板用検査装置50は、可動式支持部55に対して第1の弾性部材54を介在して第1の支持部材53に保持されている検査用素子52と、同じ可動式支持部55に対して第2の弾性部材58を介在して第2の支持部材57に保持されている複数のプローブ56と、を備える。この第2の支持部材57はプローブ用支持手段と呼んでも良い。つまり、検査用素子52を支持する手段、つまり押圧手段と、複数のプローブ56を支持するプローブ用支持手段とはそれぞれ別々に配置されている。   The integrated circuit board inspection apparatus 50 has the same movable support portion 55 as the inspection element 52 held by the first support member 53 with the first elastic member 54 interposed between the movable support portion 55 and the movable support portion 55. And a plurality of probes 56 held by the second support member 57 with the second elastic member 58 interposed therebetween. The second support member 57 may be called probe support means. That is, the means for supporting the inspection element 52, that is, the pressing means, and the probe support means for supporting the plurality of probes 56 are separately arranged.

第1の弾性部材54及び第2の弾性部材58は何れも片持ち式であって、具体的にカンチレバー状に可動式支持部55に形成されている。図8に示す形態では、第1の弾性部材54及び第2の弾性部材58は何れも棒状又は細長平板状を有して、ステージ51の表面に沿って延びて設けられている。第1の弾性部材54及び第2の弾性部材58の各端部が可動式支持部55に固定されている。第1の弾性部材54の先端部には第1の支持部材53が取り付けられており、第2の弾性部材58の先端部には第2の支持部材57が取り付けられている。第1の支持部材53及び第2の支持部材57は、それぞれ、棒状、三角平板状、矩形平板状、多角形平板状などの形状を有して、ステージ51の表面に沿って、可動式支持部55とは逆方向に延びて設けられている。図8に示すように、第1の弾性部材54及び第1の支持部材53が第2の弾性部材58及び第2の支持部材57と比べてステージ51側に配置されているが、逆に、第2の弾性部材58及び第2の支持部材57が第1の弾性部材54及び第1の支持部材53と比べてステージ51側に配置されていてもよいし、ステージ51とほぼ同じ高さに配置されていてもよい。第1の弾性部材54及び第1の支持部材53は、平面視において第2の弾性部材58及び第2の支持部材57と重なるように配置されていてもよいし、逆に平面視において第2の弾性部材58及び第2の支持部材57と重ならないように配置されてもよい。   The first elastic member 54 and the second elastic member 58 are both cantilevered, and are specifically formed on the movable support portion 55 in a cantilever shape. In the form shown in FIG. 8, each of the first elastic member 54 and the second elastic member 58 has a bar shape or an elongated flat plate shape, and is provided extending along the surface of the stage 51. End portions of the first elastic member 54 and the second elastic member 58 are fixed to the movable support portion 55. A first support member 53 is attached to the distal end portion of the first elastic member 54, and a second support member 57 is attached to the distal end portion of the second elastic member 58. Each of the first support member 53 and the second support member 57 has a bar shape, a triangular plate shape, a rectangular plate shape, a polygonal plate shape, and the like, and is movable along the surface of the stage 51. The portion 55 is provided so as to extend in the opposite direction. As shown in FIG. 8, the first elastic member 54 and the first support member 53 are arranged on the stage 51 side as compared with the second elastic member 58 and the second support member 57. The second elastic member 58 and the second support member 57 may be arranged on the stage 51 side as compared with the first elastic member 54 and the first support member 53, or substantially the same height as the stage 51. It may be arranged. The first elastic member 54 and the first support member 53 may be arranged so as to overlap the second elastic member 58 and the second support member 57 in a plan view, and conversely, the second elastic member 58 and the second support member 57 in a plan view. The elastic member 58 and the second support member 57 may be arranged so as not to overlap.

検査用素子52は、電極パッド111A,111Bに押圧されている状態で検査用素子52と集積回路基板110における集積回路とで形成される回路が、MEMS素子120が集積回路基板110に搭載されたときに集積回路とMEMS素子120とで形成される回路と等価回路として同一となるよう構成されている。例えば、検査対象となる集積回路基板110における電極パッド111A,111Bと電気的に接続されるMEMS素子120と同一構造、同一寸法を有しており、受動素子と検査用接続部52A,52Bとで二端子回路を備えている。第1の支持部材53は絶縁材料で構成される。検査用素子52が集積回路基板110の電極パッド111A,111Bと電気的に接続されて集積回路網を構成した際、その集積回路網に流れる信号に影響を与えないためである。   The inspection element 52 is a circuit formed by the inspection element 52 and the integrated circuit in the integrated circuit substrate 110 while being pressed by the electrode pads 111A and 111B, and the MEMS element 120 is mounted on the integrated circuit substrate 110. The circuit is sometimes configured to be the same as the circuit formed by the integrated circuit and the MEMS element 120 as an equivalent circuit. For example, it has the same structure and the same dimensions as the MEMS element 120 electrically connected to the electrode pads 111A and 111B in the integrated circuit substrate 110 to be inspected, and the passive element and the inspection connection parts 52A and 52B have the same structure. It has a two-terminal circuit. The first support member 53 is made of an insulating material. This is because when the test element 52 is electrically connected to the electrode pads 111A and 111B of the integrated circuit board 110 to form an integrated circuit network, the signal flowing through the integrated circuit network is not affected.

これに対し、第2の支持部材57は必ずしも絶縁材料で構成される必要はない。第2の支持部材57には複数のプローブ取付孔が穿設されており、各プローブ取付孔にプローブ56を下向きに突き出すように設け、プローブ56の側面とプローブ取付孔とが絶縁されていればよい。各プローブ56は検査用素子52における検査用接続部52A,52Bとは異なり、リジッドである必要はなく、バネ形状を部分的に有していてもよい。即ち、第2の支持部材57に取り付けられる複数のプローブ56のそれぞれがバネ構造を一部又は全部に有していれば、第2の支持部材57は弾性部材を含まず、可動式支持部55に直接設けられても良い。プローブ56は、例えば第1乃至第3のプローブ56A,56B,56Cで構成される。   On the other hand, the second support member 57 is not necessarily made of an insulating material. A plurality of probe mounting holes are formed in the second support member 57, provided that the probes 56 are protruded downward in the respective probe mounting holes, and the side surfaces of the probes 56 and the probe mounting holes are insulated. Good. Unlike the inspection connection portions 52A and 52B in the inspection element 52, each probe 56 does not have to be rigid and may partially have a spring shape. That is, if each of the plurality of probes 56 attached to the second support member 57 has a spring structure in part or in whole, the second support member 57 does not include an elastic member, and the movable support portion 55. May be provided directly. The probe 56 is composed of, for example, first to third probes 56A, 56B, and 56C.

検査用回路59は、MEMS素子120と集積回路基板110の集積回路とで回路網が構成されているとき、この回路網に電気的なエネルギーを供給する電源部59Aと、この回路網から出力される信号を測定する測定部59Bと、を有している。第1のプローブ56Aと電源部59Aとは配線59Cで電気的に接続されており、第2のプローブ56Bと電源部59Aとは配線59Dで電気的に接続されており、第3のプローブ56Cと測定部59Bとは配線59Eで電気的に接続されている。   When the circuit network is configured by the MEMS element 120 and the integrated circuit of the integrated circuit board 110, the inspection circuit 59 is output from the power supply unit 59A that supplies electrical energy to the circuit network and the circuit network. And a measurement unit 59B for measuring a signal. The first probe 56A and the power supply unit 59A are electrically connected by a wiring 59C, and the second probe 56B and the power supply unit 59A are electrically connected by a wiring 59D, and the third probe 56C is connected to the third probe 56C. The measurement unit 59B is electrically connected by a wiring 59E.

前述の他の実施形態と同様、集積回路基板110は、MEMS素子120との接続により回路網を形成して機能デバイスを構成する。集積回路基板110の表面には、MEMS素子120と接続する第1の電極パッド111A及び第2の電極パッド111Bと、回路網に対して駆動用の電気的エネルギーを供給するための第1及び第2の駆動電極用パッド111G,111Hと、機能デバイスにより出力される信号を取り出すための検査用電極パッド111Iと、が設けられている。第1及び第2の駆動電極用パッド111G,111Hは第1及び第2のプローブ56A,56Bに接触し、検査用電極パッド111Iは第3のプローブ56Cに接触する。   As in the other embodiments described above, the integrated circuit board 110 forms a circuit network by connecting to the MEMS element 120 to constitute a functional device. On the surface of the integrated circuit substrate 110, the first and second electrode pads 111A and 111B connected to the MEMS element 120, and the first and the second for supplying electric energy for driving to the circuit network. Two drive electrode pads 111G and 111H and an inspection electrode pad 111I for taking out a signal output from the functional device are provided. The first and second drive electrode pads 111G and 111H are in contact with the first and second probes 56A and 56B, and the inspection electrode pad 111I is in contact with the third probe 56C.

ここで、可動式支持部55が下降するかステージが上昇するかして、可動式支持部55とステージ51との距離が小さくなると、第1の支持部材53に支持された検査用素子52の検査用接続部52A,52Bが第1の弾性部材54により適宜の押圧力で集積回路基板110の電極パッド111A,111Bに当接すると同時に、各プローブ56A,56B,56Cが第2の弾性部材58により適宜の押圧力で集積回路基板110の電極パッド111G,111H,111Iに対して当接する。   Here, if the distance between the movable support portion 55 and the stage 51 is reduced by moving the movable support portion 55 or raising the stage, the inspection element 52 supported by the first support member 53 is reduced. The inspection connecting portions 52A and 52B are brought into contact with the electrode pads 111A and 111B of the integrated circuit board 110 with an appropriate pressing force by the first elastic member 54, and at the same time, the probes 56A, 56B and 56C are in contact with the second elastic member 58. Thus, the electrode pads 111G, 111H, and 111I of the integrated circuit substrate 110 are brought into contact with each other with an appropriate pressing force.

集積回路基板用検査装置50においても、検査用素子52を絶縁性でなる第1の支持部材53で保持し、第1の支持部材53を第1の弾性部材54で可動式支持部55に取り付けている。その際、第1の支持部材53は絶縁性でなり、検査用素子52が第1の弾性部材54と所定の距離d1だけ離しているため、検査用素子52は第1の弾性部材54の存在の影響を受けない。また、検査用素子52は、検査用素子52寄りのプローブ56Aと所定の距離d1’だけ離れているため、検査用素子52はプローブ56Aの存在の影響を受けない。加えて、第2の支持部材57が電気導電体である場合には、第2の支持部材57は、検査用素子52における受動素子(図8では点線で示されている。)の上端部から所定の距離d2だけ離れて存在しているので、検査用素子52は第2の支持部材57の影響も受けない。以上により、MEMS素子120の集積回路基板110への搭載状態において集積回路基板110の集積回路とMEMS素子120とで形成される回路網と、検査用素子52の集積回路基板110への押圧状態において集積回路基板110の集積回路と検査用素子52とで形成される回路網とが等価回路として同一となる。   Also in the integrated circuit board inspection apparatus 50, the inspection element 52 is held by the insulating first support member 53, and the first support member 53 is attached to the movable support portion 55 by the first elastic member 54. ing. At this time, since the first support member 53 is insulative and the inspection element 52 is separated from the first elastic member 54 by a predetermined distance d1, the inspection element 52 is present in the presence of the first elastic member 54. Not affected. Further, since the inspection element 52 is separated from the probe 56A near the inspection element 52 by a predetermined distance d1 ', the inspection element 52 is not affected by the presence of the probe 56A. In addition, when the second support member 57 is an electric conductor, the second support member 57 is from the upper end of the passive element (indicated by a dotted line in FIG. 8) in the inspection element 52. The inspection element 52 is not affected by the second support member 57 because the inspection element 52 exists by a predetermined distance d2. As described above, in a state where the MEMS element 120 is mounted on the integrated circuit board 110, the circuit network formed by the integrated circuit of the integrated circuit board 110 and the MEMS element 120, and the state in which the testing element 52 is pressed against the integrated circuit board 110. The circuit network formed by the integrated circuit of the integrated circuit substrate 110 and the test element 52 is the same as an equivalent circuit.

検査用素子52が、検査用素子52の周りで損失を生じる部材(以下、「損失部材」と呼ぶ。)、例えば第1の弾性部材54や第2の支持部材57とどの程度離隔して設ければ良いかは、検査用素子52に設けられている素子の種類や形状によって定まる。その素子は集積回路基板110に後に搭載されるMEMS素子と同一の構造及び寸法を有しているので、結果として、MEMS素子の種類や形状によって定まる。そこで、MEMS素子がコイルである場合について説明する。   The inspection element 52 is provided so as to be separated from a member (hereinafter referred to as a “loss member”) that generates a loss around the inspection element 52, for example, the first elastic member 54 and the second support member 57. Whether it should be determined depends on the type and shape of the element provided in the inspection element 52. Since the element has the same structure and dimensions as a MEMS element to be mounted later on the integrated circuit substrate 110, the result is determined by the type and shape of the MEMS element. Therefore, a case where the MEMS element is a coil will be described.

図9は、MEMS素子が正方形のコイルである場合において、検査用素子52と第1の弾性部材54、第2の支持部材57との距離d1,d2をどのように決定すべきかを説明するための説明図であり、(A)はモデル設定の状態を示す図、(B)はZ軸方向の距離に対する磁場強度の変化を示す図、(C)はXY平面におけるコイルの一辺からの距離に対する磁場強度の変化を示す図である。   FIG. 9 illustrates how distances d1 and d2 between the inspection element 52, the first elastic member 54, and the second support member 57 should be determined when the MEMS element is a square coil. (A) is a diagram showing a model setting state, (B) is a diagram showing a change in magnetic field strength with respect to a distance in the Z-axis direction, and (C) is a diagram with respect to a distance from one side of the coil on the XY plane. It is a figure which shows the change of a magnetic field intensity.

図9(A)に示すように、検査用素子52を正方形のコイルとする。コイルの中心を原点Oとして、コイルの軸方向をZ軸とし、コイルの各辺をX軸、Y軸と平行なるよう座標軸を設定する。ここで、正方形のコイルは、一巻きとしても複数巻きでもよい。このような設定の下において、Z軸方向の磁場強度を示したグラフが図9(B)であり、XY平面におけるコイル一辺からの距離に応じた磁場強度を示したグラフが図9(C)である。図9(B)及び(C)の何れも、横軸はコイルの一辺と距離との比、即ち(コイル一辺からの距離)/(コイルの一辺の長さ)であり、縦軸は原点Oでの磁場強度で正規化した各点での磁場強度を示している。図9(B)及び(C)は何れもビオ・サバールの法則から算出している。   As shown in FIG. 9A, the inspection element 52 is a square coil. The coordinate axis is set so that the center of the coil is the origin O, the axial direction of the coil is the Z axis, and each side of the coil is parallel to the X axis and the Y axis. Here, the square coil may be a single turn or a plurality of turns. Under such settings, a graph showing the magnetic field strength in the Z-axis direction is FIG. 9B, and a graph showing the magnetic field strength according to the distance from one side of the coil in the XY plane is FIG. 9C. It is. 9B and 9C, the horizontal axis represents the ratio of one side of the coil to the distance, that is, (distance from one side of the coil) / (length of one side of the coil), and the vertical axis represents the origin O. The magnetic field strength at each point normalized by the magnetic field strength at is shown. 9B and 9C are calculated from Bio-Savart's law.

図9(B)から分かるように、コイル中心からZ軸方向に離れるにつれて、磁場強度は急激に減少する。コイル中心からコイル一辺の長さの約1.8倍だけ軸方向(±Z軸方向)に離れた位置における磁場強度は、コイル中心での磁界強度の1/10である。   As can be seen from FIG. 9B, the magnetic field strength sharply decreases with increasing distance from the coil center in the Z-axis direction. The magnetic field strength at a position away from the coil center in the axial direction (± Z-axis direction) by about 1.8 times the length of one side of the coil is 1/10 of the magnetic field strength at the coil center.

図9(C)から分かるように、コイルが設置されておりかつ軸を法線方向に有する面(以下、「コイル設置面」と呼ぶ。)において、コイルから離れた位置では、磁場強度は急激に減少する。コイル設置面においてコイル一辺からの距離がコイル一辺の長さの約0.8倍だけ外方向に離れた位置における磁場強度は、コイル中心での磁場強度の1/10である。   As can be seen from FIG. 9C, the magnetic field strength is abrupt at a position away from the coil on the surface where the coil is installed and having the axis in the normal direction (hereinafter referred to as “coil installation surface”). To decrease. The magnetic field strength at a position where the distance from one side of the coil is about 0.8 times the length of one side of the coil on the coil installation surface is 1/10 of the magnetic field strength at the center of the coil.

そこで、検出用素子52、即ちコイルを含む集積回路基板用検査装置が有する素子の精度を考慮すると、損失部材がコイルの軸方向にコイル一辺の長さの約1.8倍以上離隔されていれば、又は損失部材がコイル設置面においてコイル一辺から外方向にコイル一辺の長さの約0.8倍以上離隔されていれば、損失部材は、検出用素子52と集積回路基板110とで形成される回路網への損失部材の影響を無視できる。   Therefore, in consideration of the accuracy of the detecting element 52, that is, the element included in the integrated circuit board inspection apparatus including the coil, the loss member is separated by about 1.8 times or more of the length of one side of the coil in the axial direction of the coil. Or the loss member is formed by the detection element 52 and the integrated circuit board 110 if the loss member is spaced outward from the coil side by about 0.8 times the length of the coil side on the coil installation surface. The influence of the loss member on the generated network can be ignored.

別の例を挙げる。MEMS素子が円形コイルである場合において、図9を参照して説明したのと同様に計算すると、次のような結果を得ることができる。円形コイルは、図9(A)に示される場合と同様に、円形コイルの軸がZ軸となり、円形コイルの中心が原点となるよう座標系を設置するものとする。コイル中心からZ軸方向に離れるにつれて、磁場強度は急激に減少する。コイル中心からコイル直径の約1倍だけ軸方向(±Z軸方向)に離れた位置における磁場強度は、コイル中心での磁界強度の1/10である。コイルが設置されておりかつ軸を法線方向に有する面(以下、「コイル設置面」と呼ぶ。)において、コイルから離れた位置では、磁場強度は急激に減少する。コイル設置面においてコイル外周からの距離がコイル直径の約0.5倍だけ外方向に離れた位置における磁場強度は、コイル中心での磁場強度の1/10である。   Here is another example. When the MEMS element is a circular coil, the following results can be obtained by calculating in the same manner as described with reference to FIG. As in the case shown in FIG. 9A, the coordinate system of the circular coil is set so that the axis of the circular coil is the Z axis and the center of the circular coil is the origin. As the distance from the center of the coil increases in the Z-axis direction, the magnetic field strength decreases rapidly. The magnetic field strength at a position away from the coil center in the axial direction (± Z-axis direction) by about 1 times the coil diameter is 1/10 of the magnetic field strength at the coil center. On the surface where the coil is installed and which has the axis in the normal direction (hereinafter referred to as “coil installation surface”), the magnetic field strength sharply decreases at a position away from the coil. The magnetic field strength at a position where the distance from the outer periphery of the coil is about 0.5 times the coil diameter on the coil installation surface is 1/10 of the magnetic field strength at the coil center.

そこで、検出用素子52、即ちコイルを含む集積回路基板用検査装置が有する各種の素子の精度を考慮すると、損失部材がコイルの軸方向にコイル直径の約1倍以上離隔していれば、又は損失部材がコイル設置面においてコイル外周から外方向にコイル直径の約0.5倍以上離隔してれば、損失部材は、検出用素子52と集積回路基板110とで形成される回路網への影響を無視できる。   Therefore, in consideration of the accuracy of various elements of the detection element 52, that is, the integrated circuit board inspection apparatus including the coil, if the loss member is separated by about 1 time or more of the coil diameter in the axial direction of the coil, or If the loss member is separated from the outer periphery of the coil by about 0.5 times or more of the coil diameter on the coil installation surface, the loss member is transferred to the circuit network formed by the detection element 52 and the integrated circuit board 110. The influence can be ignored.

以上のことから、集積回路基板用検査装置50において、検査用素子52がX軸を軸とする円形コイルを有している場合には、損失部材となる第1の弾性部材54との距離L1はX軸方向距離でコイル直径の1倍以上であればよく、損失部材となる第2の支持部材57との距離L2はZ軸方向距離でコイル直径の0.5倍以上であればよい。検査用素子52がX軸を軸とする正方形コイルを有している場合には、損失部材となる第1の弾性部材54との距離L1はX軸方向距離でコイル直径の1.8倍以上であればよく、損失部材となる第2の支持部材57との距離L2はZ軸方向距離でコイル直径の0.8倍以上であればよい。   From the above, in the integrated circuit board inspection apparatus 50, when the inspection element 52 has a circular coil with the X axis as an axis, the distance L1 from the first elastic member 54 serving as a loss member. The distance L2 from the second support member 57 serving as a loss member may be 0.5 times or more of the coil diameter in the Z-axis direction distance. When the inspection element 52 has a square coil with the X axis as the axis, the distance L1 from the first elastic member 54 as the loss member is 1.8 times or more the coil diameter in the X axis direction distance. The distance L2 from the second support member 57 serving as the loss member may be 0.8 times or more the coil diameter in the Z-axis direction distance.

検査用素子52が有するコイルの軸方向がX軸方向ではなく、図8に点線で示すように、Z軸方向である場合には、次のように求めることができる。即ち、集積回路基板用検査装置50において、検査用素子52がZ軸を軸とする円形コイルを有している場合には、円形コイルの上端部から損失部材となる電気導電性の第2の支持部材57との距離L2はZ軸方向距離でコイル直径の1倍以上であればよく、損失部材となる第1の弾性部材54との距離L1はX軸方向距離でコイル直径の0.5倍以上であればよい。一方、検査用素子52がZ軸を軸とする正方形コイルを有している場合には、円形コイルの上端部から損失部材となる電気導電性の第2の支持部材57との距離L2はZ軸方向距離でコイル直径の1.8倍以上であればよく、損失部材となる第1の弾性部材54との距離L1はX軸方向距離でコイル直径の0.8倍以上であればよい。   When the axial direction of the coil included in the inspection element 52 is not the X-axis direction but the Z-axis direction as shown by a dotted line in FIG. 8, it can be obtained as follows. That is, in the integrated circuit board inspection apparatus 50, when the inspection element 52 has a circular coil with the Z axis as the axis, the second electrically conductive second member that becomes a loss member from the upper end of the circular coil. The distance L2 between the support member 57 and the first elastic member 54 serving as a loss member may be one or more times the coil diameter in the Z-axis direction. It may be more than double. On the other hand, when the inspection element 52 has a square coil with the Z axis as an axis, the distance L2 between the upper end of the circular coil and the electrically conductive second support member 57 that becomes a loss member is Z. The axial distance may be 1.8 times or more of the coil diameter, and the distance L1 from the first elastic member 54 serving as the loss member may be 0.8 times or more of the coil diameter in the X-axis direction.

上記説明では、検査用素子52がコイル素子である場合であるので、第1の弾性手段14がコイル素子で生じる磁場の最大強度の1/10以下に減衰する領域に設けられるが、同様の手法により検査用素子がコイル以外の電気素子を含んでいる場合でも、検査用素子52が、検査用素子52の周りで損失を生じる部材、例えば第1の弾性部材54や第2の支持部材57とどの程度離隔すればよいか、定めることができる。   In the above description, since the inspection element 52 is a coil element, the first elastic means 14 is provided in a region that attenuates to 1/10 or less of the maximum intensity of the magnetic field generated in the coil element. Even when the inspection element includes an electric element other than the coil, the inspection element 52 is a member that causes a loss around the inspection element 52, for example, the first elastic member 54 and the second support member 57. You can determine how far away you should be.

加えて、集積回路基板用検査装置40は、例えばステージ51を上昇するか又は可動式支持部55をステージ51側に下降するかして検査用接続部52A,52Bと集積回路基板110の電極パッド111A,111B,111G,111H,111Iとの距離をゼロ以下となるように相対的に移動させても第1の弾性部材54がしなって第1の支持部材53とともに検査用素子52が集積回路基板110に押し付けられる。その際、検査用素子52の検査用接続部52A,52Bがリジッドな構造であるがゆえに、集積回路基板110の電極パッド111A,111Bに検査用接続部52A,52Bが押し付けられても、検査用接続部52A,52Bがしなったりせず、湾曲せず硬直した状態を維持するので、検査用素子52と集積回路基板110とで集積回路網が形成され、MEMS素子120が集積回路基板110に搭載されている状況、つまり、MEMS素子120が集積回路基板110上に集積されている状況と同じ状態で検査することができる。その際、第1乃至第5の実施形態とは異なり、同一の可動式支持部55に第2の弾性部材58及び第2の支持部材57を介在して第1乃至第3のプローブ56A,56B,56Cが設けられているので、第1のプローブ56A、第2のプローブ56Bが電極パッド111G,111Hに電気的に接続し、第3のプローブ56Cが電極パッド111Iに電気的に接続する。   In addition, the integrated circuit board inspection device 40 may, for example, raise the stage 51 or lower the movable support part 55 toward the stage 51 to connect the inspection connection parts 52A and 52B and the electrode pads of the integrated circuit board 110. Even if the distances from 111A, 111B, 111G, 111H, and 111I are relatively moved so as to be less than or equal to zero, the first elastic member 54 is bent, and the test element 52 is integrated with the first support member 53. Pressed against the substrate 110. At this time, since the inspection connection portions 52A and 52B of the inspection element 52 have a rigid structure, even if the inspection connection portions 52A and 52B are pressed against the electrode pads 111A and 111B of the integrated circuit substrate 110, Since the connecting portions 52A and 52B are not bent and are not bent and kept rigid, an integrated circuit network is formed by the test element 52 and the integrated circuit substrate 110, and the MEMS element 120 is formed on the integrated circuit substrate 110. The inspection can be performed in the same state as in the mounted state, that is, the state in which the MEMS element 120 is integrated on the integrated circuit substrate 110. In this case, unlike the first to fifth embodiments, the first to third probes 56A and 56B are provided with the second elastic member 58 and the second support member 57 interposed in the same movable support portion 55. , 56C are provided, the first probe 56A and the second probe 56B are electrically connected to the electrode pads 111G, 111H, and the third probe 56C is electrically connected to the electrode pad 111I.

なお、第1及び第2のプローブ56A,56Bは検査用接続部52A,52Bとは異なり、リジッドな構造である必要は必ずしもない。第1及び第2のプローブ56A,56Bを経由して流れる電流は高周波ではないからである。その点、第3のプローブ56Cには、検査用素子52内の受動素子と集積回路基板110内の集積回路とで構成される高周波回路からの高周波信号が流れるので測定検査の精度上、リジッドな構造であることが好ましいが、高周波回路に与える影響が小さく無視できる程度の構造であれば十分である。   Note that the first and second probes 56A and 56B do not necessarily have a rigid structure, unlike the inspection connection portions 52A and 52B. This is because the current flowing through the first and second probes 56A and 56B is not high frequency. In that respect, since the high-frequency signal from the high-frequency circuit composed of the passive element in the inspection element 52 and the integrated circuit in the integrated circuit substrate 110 flows through the third probe 56C, it is rigid for the accuracy of measurement and inspection. A structure is preferable, but a structure that can be ignored with little influence on the high-frequency circuit is sufficient.

第6実施形態に係る集積回路基板用検査装置50による集積回路基板110の検査方法について説明する。   An inspection method for the integrated circuit board 110 by the integrated circuit board inspection apparatus 50 according to the sixth embodiment will be described.

ステップ1として、先ず、検査対象となる集積回路基板110をステージ51に載置して固定する。   As step 1, first, the integrated circuit board 110 to be inspected is placed on the stage 51 and fixed.

ステップ2として、可動式支持部55をXY方向に駆動し、検査用素子52及び第1乃至第3のプローブ56A,56B,56Cを集積回路基板110の上方ヘ移動し、検査用素子52の検査用接続部52A,52B、第1乃至第3のプローブ56A,56B,56Cをそれぞれ集積回路基板110の電極パッド111A、111B、111G、111H,111Iの上に位置合わせする。   In step 2, the movable support portion 55 is driven in the X and Y directions, the inspection element 52 and the first to third probes 56A, 56B, and 56C are moved above the integrated circuit board 110, and the inspection element 52 is inspected. The connecting portions 52A and 52B and the first to third probes 56A, 56B, and 56C are aligned on the electrode pads 111A, 111B, 111G, 111H, and 111I of the integrated circuit substrate 110, respectively.

ステップ3として、可動式支持部55を下降するか又はステージ51を上昇させるかして検査用素子52の検査用接続部52A,52B及び第1乃至第3のプローブ56A,56B,56Cをそれぞれ集積回路基板110の電極パッド111A、111B、111G、111H,111Iに接触させ、さらに第1の弾性部材54及び第2の弾性部材58を弾性変形させて検査用素子52の検査用接続部52A,52B及び第1乃至第3のプローブ56A,56B,56Cをそれぞれ電極パッド111A、111B、111G、111H,111Iに押圧する。すると、検査用素子52の検査用接続部52A,52B及び第1乃至第3のプローブ56A,56B,56Cが第1の弾性部材54及び第2の弾性部材58の各復元力に基づいて電極パッド111A、111B、111G、111H,111Iの表面酸化膜を突き破り電極パッド111A、111B、111G、111H,111Iに電気的に接触する。   As Step 3, the inspection connection portions 52A and 52B and the first to third probes 56A, 56B and 56C of the inspection element 52 are integrated by moving the movable support portion 55 down or raising the stage 51, respectively. The test connection portions 52A and 52B of the test element 52 are brought into contact with the electrode pads 111A, 111B, 111G, 111H, and 111I of the circuit board 110, and the first elastic member 54 and the second elastic member 58 are elastically deformed. The first to third probes 56A, 56B, and 56C are pressed against the electrode pads 111A, 111B, 111G, 111H, and 111I, respectively. Then, the inspection connection portions 52A and 52B of the inspection element 52 and the first to third probes 56A, 56B, and 56C are electrode pads based on the restoring forces of the first elastic member 54 and the second elastic member 58, respectively. The surface oxide films of 111A, 111B, 111G, 111H, and 111I are pierced and electrically contacted with the electrode pads 111A, 111B, 111G, 111H, and 111I.

ステップ4として、必要に応じて、可動式支持部55又はステージ51を水平に移動する。すると、検査用素子52の検査用接続部52A,52B及び第1乃至第3のプローブ56A,56B,56Cが電極パッド111A、111B、111G、111H,111Iの表面に沿って摺動することで、電極パッド111A、111B、111G、111H,111Iとの接触を確実にして電気的に接続する。つまり、検査用素子52と電極パッド111A,111Bとの接触抵抗が小さくなり、検査用素子52と集積回路基板110内の集積回路が接続され、高周波回路を形成する。   As Step 4, the movable support part 55 or the stage 51 is moved horizontally as necessary. Then, the inspection connection portions 52A and 52B of the inspection element 52 and the first to third probes 56A, 56B, and 56C slide along the surfaces of the electrode pads 111A, 111B, 111G, 111H, and 111I. The contact with the electrode pads 111A, 111B, 111G, 111H, and 111I is ensured and electrically connected. That is, the contact resistance between the testing element 52 and the electrode pads 111A and 111B is reduced, and the testing element 52 and the integrated circuit in the integrated circuit substrate 110 are connected to form a high-frequency circuit.

ステップ5として、検査用回路により、第1及び第2のプローブ56A,56B間に電圧を印加するか又は電流を流して高周波回路を駆動し、高周波回路の出力信号を第3のプローブ56Cから取り出し検査用回路59に入力する。これにより、集積回路基板110内の集積回路を検査できる。   In step 5, the high-frequency circuit is driven by applying a voltage or passing a current between the first and second probes 56A and 56B by the inspection circuit, and the output signal of the high-frequency circuit is taken out from the third probe 56C. This is input to the inspection circuit 59. Thereby, the integrated circuit in the integrated circuit board 110 can be inspected.

(第7実施形態)
図10は、本発明の第7実施形態に係る集積回路基板用検査装置70を示し、(A)は模式的な断面図、(B)は底面図である。第7実施形態に係る集積回路基板用検査装置70は、同一の集積回路が複数平面的に並んで配設された集積回路基板を検査対象とする。よって、集積回路基板用検査装置70は、集積回路基板に構成されている各集積回路に対応して配列されており、図10に示すように、検査用素子72が一列に並んで複数列で配置されている。各検査用素子72同士の間には、複数のプローブ76を支持する手段76Aが配置されている。
(Seventh embodiment)
10A and 10B show an integrated circuit board inspection apparatus 70 according to a seventh embodiment of the present invention, in which FIG. 10A is a schematic cross-sectional view and FIG. 10B is a bottom view. The integrated circuit board inspection apparatus 70 according to the seventh embodiment targets an integrated circuit board on which a plurality of identical integrated circuits are arranged in a plane. Therefore, the integrated circuit board inspection device 70 is arranged corresponding to each integrated circuit configured on the integrated circuit board, and as shown in FIG. 10, the inspection elements 72 are arranged in a single row in a plurality of rows. Has been placed. A means 76A for supporting a plurality of probes 76 is disposed between the test elements 72.

図11は、図9に示す第7実施形態に係る集積回路基板用検査装置に関する一ユニットを示し、(A)は底面図、(B)はD−D線に沿う断面図である。図12(A)はA−A線に沿う断面図、(B)はB−B線に沿う断面図、(C)はC−C線に沿う断面図である。集積回路基板用検査装置70は、平板状を有して所定の間隔を開けて窪み75aが下面に形成されている支持部75と、複数の第1の押圧手段73と、それぞれが第1の押圧手段73の先端部で下面に取り付けられた複数の検査用素子72と、複数の第2の押圧手段77と、それぞれが第2の押圧手段77の先端部で下側に突出して設けられている複数のプローブ76と、を備え、各第1の押圧手段73が支持部75の下面75bで窪み75aの外周部の一端部に取り付けられて片持ち式となっている。同じく、各第2の押圧手段77が支持部75の下面75cで窪み75aの外周部の他端部に取り付けられて片持ち式となっている。ここで、第1の押圧手段73は、検査用素子72における回路素子、例えばコイル素子の上端部との距離を所定の範囲に配置される。つまり、第1の押圧手段73と検査用素子72における回路素子との間には絶縁体が存在するため、絶縁体の高さを調整することにより、第1の押圧手段73が回路素子に与える影響を無視することが可能となる。図示した例では、検査用素子72を第1の押圧手段73に取り付ける接着層77bの存在が、第1の押圧手段73の回路素子への影響を少なくし又はなくす。詳細については後述する。   11A and 11B show one unit relating to the integrated circuit board inspection apparatus according to the seventh embodiment shown in FIG. 9, wherein FIG. 11A is a bottom view and FIG. 11B is a cross-sectional view taken along the line DD. 12A is a cross-sectional view taken along line AA, FIG. 12B is a cross-sectional view taken along line BB, and FIG. 12C is a cross-sectional view taken along line CC. The integrated circuit board inspection device 70 has a flat plate shape with a predetermined interval and a depression 75a formed on the lower surface, and a plurality of first pressing means 73, each of which has a first shape. A plurality of inspection elements 72 attached to the lower surface at the front end of the pressing means 73 and a plurality of second pressing means 77 are provided so as to protrude downward at the front end of the second pressing means 77. Each of the first pressing means 73 is attached to one end portion of the outer peripheral portion of the recess 75a on the lower surface 75b of the support portion 75 and is cantilevered. Similarly, each second pressing means 77 is attached to the other end portion of the outer peripheral portion of the recess 75a on the lower surface 75c of the support portion 75, and is a cantilever type. Here, the first pressing means 73 is disposed within a predetermined range with respect to the circuit element in the inspection element 72, for example, the distance from the upper end of the coil element. That is, since an insulator exists between the first pressing means 73 and the circuit element in the inspection element 72, the first pressing means 73 gives the circuit element by adjusting the height of the insulator. The influence can be ignored. In the illustrated example, the presence of the adhesive layer 77b for attaching the inspection element 72 to the first pressing means 73 reduces or eliminates the influence of the first pressing means 73 on the circuit elements. Details will be described later.

ここで、第1の押圧手段73の寸法と第2の押圧手段77の寸法との比を調整することで、第1の押圧手段73に取り付けられている検査用素子72、特にその先端の検査用接続部72A,72Bの形状変化を抑えることができる。なお、図10(A)では、紙面の左右方向、つまり、第1の押圧手段73、第2の押圧手段77の延びている方向に沿って検査用接続部72A,72Bが設けられているが、これらは検査用素子72に二つの検査用接続部72A,72Bが突出して設けられていることを模式的に示すためであって、図10(B)及び図11、図12に示すように、第1の押圧手段73、第2の押圧手段77の延びている方向に交差、特に直交するように設けられているのが好ましい。これは、二つの検査用接続部72A,72Bの何れか一方の先端のみが検査対象たる集積回路基板における電極パッドに接触することを避けるためである。詳細については後述する。第7実施形態に係る集積回路基板用検査装置70による検査手順は、前述した他の実施形態と同様である。   Here, by adjusting the ratio between the dimension of the first pressing means 73 and the dimension of the second pressing means 77, the inspection element 72 attached to the first pressing means 73, particularly the inspection of the tip thereof. The shape change of the connecting portions 72A and 72B can be suppressed. In FIG. 10A, inspection connection portions 72A and 72B are provided along the left-right direction of the page, that is, along the direction in which the first pressing means 73 and the second pressing means 77 extend. These are for schematically showing that the two inspection connection portions 72A and 72B are provided so as to protrude from the inspection element 72, as shown in FIG. 10B, FIG. 11, and FIG. It is preferable that the first pressing means 73 and the second pressing means 77 are provided so as to intersect, in particular, to be orthogonal to the extending direction. This is for avoiding that only one tip of the two inspection connection portions 72A and 72B comes into contact with the electrode pad on the integrated circuit substrate to be inspected. Details will be described later. The inspection procedure by the integrated circuit board inspection apparatus 70 according to the seventh embodiment is the same as that of the other embodiments described above.

図10に示す第7実施形態に係る集積回路基板用検査装置70の製造方法について説明する。図13乃至図16は、図10に模式的に示す第7実施形態に係る集積回路基板用検査装置70の作製工程を模式的に示す図である。   A method for manufacturing the integrated circuit board inspection apparatus 70 according to the seventh embodiment shown in FIG. 10 will be described. FIG. 13 to FIG. 16 are diagrams schematically showing a manufacturing process of the integrated circuit board inspection apparatus 70 according to the seventh embodiment schematically shown in FIG.

第1ステップでは、図13(A)に示すように、例えば結晶方向(100)を有するシリコン基板などの半導体基板81の表面に、例えばKOHなどのアルカリ溶液を用いてアルカリ異方性エッチングを行う。これにより、ピラミッド型のエッチピット81aを作製する。   In the first step, as shown in FIG. 13A, alkali anisotropic etching is performed on the surface of a semiconductor substrate 81 such as a silicon substrate having a crystal direction (100) using an alkali solution such as KOH. . Thereby, a pyramid type etch pit 81a is produced.

第2ステップでは、図13(B)に示すように、例えば20nmのCr(クロム)層、500nmのW(タングステン)層、80nmのAu(金)層を順次堆積し、エッチングによってエッチピット81aの位置にそれらの金属を残すように薬品又はプラズマでパターニングし、金属層81bをエッチピット81aの表面に設ける。パターニングはリフトオフプロセスを用いてもよい。Wは耐摩耗性を有する硬い材料として知られており、この部分にはWの代わりにNi(ニッケル)等の他の硬い材料でもよい。また、CrやWを堆積せず先端部の材料として、直接導電性ダイヤモンドをCVD(Chemical Vapor Deposition)で堆積した後、パターニングして、その後以下に続く作製を行ってもよい。AuはWを薬品でエッチングするためのマスクとしての役割を有していて、リフトオフプロセスやプラズマでエッチングするなら金属層81bはCr層とW層の積層のみでもよい。Wの厚さは、強度を確保する必要から500nm以上あることが望ましい。   In the second step, as shown in FIG. 13B, for example, a 20 nm Cr (chromium) layer, a 500 nm W (tungsten) layer, and an 80 nm Au (gold) layer are sequentially deposited and etched to form etch pits 81a. The metal layer 81b is provided on the surface of the etch pit 81a by patterning with chemicals or plasma so as to leave those metals in place. The patterning may use a lift-off process. W is known as a hard material having wear resistance, and other hard material such as Ni (nickel) may be used instead of W. Alternatively, the conductive diamond may be deposited directly by CVD (Chemical Vapor Deposition) as a material for the tip without depositing Cr or W, followed by patterning, and then the following fabrication may be performed. Au has a role as a mask for etching W with chemicals, and the metal layer 81b may be only a laminate of a Cr layer and a W layer if it is etched by a lift-off process or plasma. The thickness of W is desirably 500 nm or more in order to ensure strength.

第3ステップでは、図13(C)に示すように、エポキシ樹脂などのレジスト82を半導体基板81に塗布し、レジスト82を貫通して上記金属層81bがパターニングされたエッチピット81aにつながる貫通配線部や受動素子としてのコイルの輪郭82aを形成する。   In the third step, as shown in FIG. 13C, a resist 82 such as an epoxy resin is applied to the semiconductor substrate 81, and the through wiring is connected to the etch pit 81a through the resist 82 and patterned with the metal layer 81b. And a contour 82a of a coil as a passive element is formed.

第4ステップでは、図13(D)に示すように、輪郭82aを含めてレジスト82にめっきシールド層として例えばTaなどの金属を堆積した後、銅めっきで型82bを埋め、表面を研磨することを繰り返す。これにより、図13(E)で示すように、受動素子及び貫通配線埋め込み基板84が形成される。即ち、受動素子及び貫通配線埋め込み基板84は、半導体基板81と、その半導体基板81上に形成されたレジスト82と、レジスト82内に埋め込まれたコイルなどの受動素子83a及び貫通配線83bと、からなる。   In the fourth step, as shown in FIG. 13D, after depositing a metal such as Ta as a plating shield layer on the resist 82 including the contour 82a, the mold 82b is filled with copper plating and the surface is polished. repeat. Thereby, as shown in FIG. 13E, the passive element and the through wiring embedded substrate 84 are formed. That is, the passive element and through wiring embedded substrate 84 includes a semiconductor substrate 81, a resist 82 formed on the semiconductor substrate 81, and a passive element 83a such as a coil embedded in the resist 82 and the through wiring 83b. Become.

第5ステップでは、図14(A)に示すように、プラスチック又はグラスファイバでなる絶縁基板85aに型によって貫通孔を形成し、めっきを施し、貫通孔を金属で埋め、絶縁基板85aに貫通配線85bとしての金属配線を形成する。絶縁基板85aの下側に貫通配線85bを一部突出する。貫通配線85bの先端部85cは、めっき又はFIBを用いて選択堆積により先端部をテーパー状に凸状に形成する。この第4ステップにより、貫通配線埋め込み絶縁体85を得る。第5ステップと、第1乃至第4ステップとは独立して行ってもよいことは説明するまでもない。   In the fifth step, as shown in FIG. 14A, a through hole is formed by a mold in an insulating substrate 85a made of plastic or glass fiber, plating is performed, the through hole is filled with metal, and a through wiring is formed on the insulating substrate 85a. A metal wiring 85b is formed. A part of the through wiring 85b protrudes below the insulating substrate 85a. The front end portion 85c of the through wiring 85b is formed in a convex shape in a tapered shape by selective deposition using plating or FIB. Through this fourth step, the through-hole buried insulator 85 is obtained. Needless to say, the fifth step and the first to fourth steps may be performed independently.

第6ステップでは、図14(A)及び(B)に示すように、受動素子及び貫通配線埋め込み基板84上で、受動素子83aが埋設されている領域と、貫通配線83bが埋め込まれている領域の周りとに接着剤をそれぞれ塗布して接着層86aとし、貫通配線埋め込み絶縁体85を貼り付ける。この工程により、貫通配線85bと貫通配線83bとを電気的に接続する。   In the sixth step, as shown in FIGS. 14A and 14B, on the passive element and through wiring embedded substrate 84, the area where the passive element 83a is embedded and the area where the through wiring 83b is embedded. An adhesive is applied to each of the layers to form an adhesive layer 86a, and a through wiring embedded insulator 85 is attached. Through this step, the through wiring 85b and the through wiring 83b are electrically connected.

第7ステップでは、図14(C)に示すように、絶縁基板85aを研磨して薄くし所定厚みを有する絶縁基板85dとする。   In the seventh step, as shown in FIG. 14C, the insulating substrate 85a is polished and thinned to obtain an insulating substrate 85d having a predetermined thickness.

第8ステップでは、図15(A)に示すように、第7ステップで研磨した絶縁基板85dの表面に、金属配線85eを形成する。金属配線85eは、密着層と電極層との積層構造で構成する。密着層は例えばCrでなり、電極層は例えばPtでなる。ここで、図15(A)では、二本の配線が重なっておらず、紙面の奥行き方向に離隔して配設されており、二本の配線同士は絶縁されている。   In the eighth step, as shown in FIG. 15A, metal wiring 85e is formed on the surface of the insulating substrate 85d polished in the seventh step. The metal wiring 85e is configured by a laminated structure of an adhesion layer and an electrode layer. The adhesion layer is made of Cr, for example, and the electrode layer is made of Pt, for example. Here, in FIG. 15A, the two wirings do not overlap each other and are spaced apart from each other in the depth direction on the paper surface, and the two wirings are insulated from each other.

第9ステップでは、図15(B)に示すように、下側に複数の窪み86aを有し、それら窪み86aの間に厚み方向に金属配線86bが貫通されている絶縁基板86を用意する。この絶縁基板86はガラス又はセラミックでなる。この絶縁基板86は、セラミック素材又はガラス素材に金属棒を挿入して型で窪み86aとなるべき凹部を形成して焼成することで作製することができる。この絶縁基板86の下側に金属配線86bが一部突出しており、めっきにより又はFIB(Focused Ion Beam)を用いた選択堆積で金属配線86bの先端部86cは凸形状を有する。   In the ninth step, as shown in FIG. 15B, an insulating substrate 86 having a plurality of depressions 86a on the lower side and having metal wiring 86b penetrated in the thickness direction between the depressions 86a is prepared. The insulating substrate 86 is made of glass or ceramic. The insulating substrate 86 can be manufactured by inserting a metal rod into a ceramic material or a glass material, forming a recess to be a depression 86a with a mold, and firing it. A part of the metal wiring 86b protrudes below the insulating substrate 86, and the tip 86c of the metal wiring 86b has a convex shape by plating or selective deposition using FIB (Focused Ion Beam).

第10ステップでは、図15(B)に示すように、窪み86aの外周の一端部及び他端部にそれぞれ金属配線85eに触れないように接着剤を塗布して接着層87a,87bとする。その後、絶縁基板85dと第8ステップで用意した絶縁基板86とを接着する。接着剤としては、例えば感光性ポリイミドを用いてもよい。   In the tenth step, as shown in FIG. 15B, an adhesive is applied to one end and the other end of the outer periphery of the recess 86a so as not to touch the metal wiring 85e, thereby forming adhesive layers 87a and 87b. Thereafter, the insulating substrate 85d and the insulating substrate 86 prepared in the eighth step are bonded. For example, photosensitive polyimide may be used as the adhesive.

第11ステップでは、まず半導体基板81をエッチングなどにより取り除いて図16(A)に示す状態とし、次に受動素子83a及び貫通配線83bの先端のCrをCrエッチャントで除去しWが先端表面に現れるようにする。さらに、レーザーカッターでレジスト82のうち矢印Aで示す領域を切断する。すると、図16(B)に示すように、検査用素子82及びプローブとなる貫通配線83bを保持するレジスト部分以外は、押圧手段となる絶縁基板85dに接着剤で固定されていないので、外れる。   In the eleventh step, the semiconductor substrate 81 is first removed by etching or the like to the state shown in FIG. 16A, and then Cr at the tips of the passive element 83a and the through wiring 83b is removed with a Cr etchant and W appears on the tip surface. Like that. Further, the region indicated by the arrow A in the resist 82 is cut with a laser cutter. Then, as shown in FIG. 16B, the portions other than the resist portion holding the inspection element 82 and the through wiring 83b serving as the probe are not fixed to the insulating substrate 85d serving as the pressing means by the adhesive, and thus come off.

第12ステップでは、レジスト82のうち図16(B)に矢印Bで示す領域をレーザーカッターで切断する。すると、図16(B)に示すように、平板状の絶縁基板85dがカットされて押圧手段73としてのカンチレバーが形成され、第1の押圧手段73としてのカンチレバーは、カンチレバーの基端部が接着層77aで固定され、基端部と反対側の先端部がフリー状態となり、その先端部の下面に接着層77bで検査用素子が取り付けられている。また、第2の押圧手段77としてのカンチレバーは、カンチレバーの基端部が接着層77cで固定され、基端部と反対側の先端部がフリー状態となり、その先端部の下面に接着層77dを介在してレジストでなるプローブ保持手段76Aが取り付けられる。   In the twelfth step, a region indicated by an arrow B in FIG. 16B in the resist 82 is cut with a laser cutter. Then, as shown in FIG. 16B, the flat insulating substrate 85d is cut to form a cantilever as the pressing means 73, and the cantilever as the first pressing means 73 is bonded to the base end portion of the cantilever. The distal end portion, which is fixed by the layer 77a and is opposite to the base end portion, is in a free state, and an inspection element is attached to the lower surface of the distal end portion by an adhesive layer 77b. Further, the cantilever as the second pressing means 77 has the base end portion of the cantilever fixed by the adhesive layer 77c, the tip portion opposite to the base end portion is in a free state, and the adhesive layer 77d is provided on the lower surface of the tip portion. A probe holding means 76A made of resist is attached.

以上の工程により、図10に示す第7実施形態に係る集積回路基板用検査装置70が完成する。以上説明した製造方法は一例であり、適宜変更しても構わない。   Through the above steps, the integrated circuit board inspection apparatus 70 according to the seventh embodiment shown in FIG. 10 is completed. The manufacturing method described above is an example, and may be changed as appropriate.

次に第1実施形態における検査用素子12について詳細に説明する。なお、他の実施形態でも同様である。図17は検査用素子12の具体的な第一の構成を示す図であり、(A)は下斜め方向から見た斜視図、(B)は底面図である。   Next, the inspection element 12 in the first embodiment will be described in detail. The same applies to other embodiments. FIGS. 17A and 17B are diagrams showing a specific first configuration of the inspection element 12, in which FIG. 17A is a perspective view seen from a lower oblique direction, and FIG. 17B is a bottom view.

検査用素子12は、金属埋め込み部を有する基体12Cと、その金属埋め込み部に設けられて基体12Cの裏側から突出している第1及び第2の検査用接続部12A,12Bと、金属埋め込み部内に埋設されて第1の検査用接続部12Aと第2の検査用接続部12Bとの間に接続される受動素子12Dとしてのコイルと、で構成されている。図17に示されているように、基体12Cの裏面に対し第1及び第2の検査用接続部12A,12Bが立設されておりその大部分は埋設されているが、第1及び第2の検査用接続部12A,12Bはその先端部12Eが基体12Cの底面から突出している。   The inspection element 12 includes a base body 12C having a metal embedded portion, first and second inspection connection portions 12A and 12B provided on the metal embedded portion and protruding from the back side of the base body 12C, and the metal embedded portion. The coil is formed as a passive element 12D that is embedded and connected between the first inspection connection portion 12A and the second inspection connection portion 12B. As shown in FIG. 17, the first and second inspection connecting portions 12A and 12B are erected on the back surface of the base body 12C, and most of them are embedded, but the first and second connection portions are embedded. The inspection connecting portions 12A and 12B have their tip portions 12E protruding from the bottom surface of the base 12C.

第1及び第2の検査用接続部12A,12Bの先端部12Eは、その断面寸法が先端になるにつれて小さくなっており、例えば尖っている。先端部12Eは図示するように四角錐状その他の角錐状、円錐状に形成されている。先端部12Eは、タングステン、ニッケル、ダンヤモンドなどの剛性の導電性素材で構成される。よって、第1及び第2の検査用接続部12A,12Bの先端部12Eが、集積回路基板110の電極パッド111A,111Bに接触して押圧されても変形せず電極パッド111A,111Bの表面酸化膜を突き破り、第1及び第2の検査用接続部12A,12Bの先端部12Eが電極パッド111A,111Bに電気的に接続する。第1及び第2の検査用接続部12A,12Bはリジッドな構造であるため、電極パッド111A,111B上を押圧して摺動しても第1及び第2の検査用接続部12A,12Bは先端部12Eを含めて変形しない。よって、検査用素子12は繰り返し用いることができる。   The distal end portions 12E of the first and second inspection connection portions 12A and 12B become smaller as the sectional dimension becomes the distal end, for example, are sharp. The tip portion 12E is formed in a quadrangular pyramid shape or other pyramid shape or conical shape as shown in the figure. The distal end portion 12E is made of a rigid conductive material such as tungsten, nickel, or dyanmond. Therefore, even if the front end portions 12E of the first and second inspection connection portions 12A and 12B are pressed in contact with the electrode pads 111A and 111B of the integrated circuit substrate 110, the surface oxidation of the electrode pads 111A and 111B does not occur. The film is pierced and the tip portions 12E of the first and second inspection connection portions 12A and 12B are electrically connected to the electrode pads 111A and 111B. Since the first and second inspection connection portions 12A and 12B have a rigid structure, the first and second inspection connection portions 12A and 12B are not affected by pressing and sliding on the electrode pads 111A and 111B. The tip portion 12E is not deformed. Therefore, the inspection element 12 can be used repeatedly.

図18は、検査用素子12の具体的な第2の構成を示す図であり、(A)は下斜め方向から見た斜視図、(B)は底面図である。図18に示す第2の構成は、検査用素子12における第1及び第2の検査用接続部12A,12Bにおける先端部12Fの形状の点で、図17とは異なる。即ち、第1及び第2の検査用接続部12A,12Bの先端部12Fは、図示するように、基体12Cに沿って稜線を有しており、その稜線の各点は基体12Cから同じ高さにある。   18A and 18B are diagrams showing a specific second configuration of the inspection element 12, in which FIG. 18A is a perspective view seen from a lower oblique direction, and FIG. 18B is a bottom view. The second configuration shown in FIG. 18 is different from FIG. 17 in the shape of the tip end portion 12F in the first and second inspection connection portions 12A and 12B in the inspection element 12. That is, the tip end portions 12F of the first and second inspection connection portions 12A and 12B have ridge lines along the base body 12C as shown in the figure, and each point of the ridge lines has the same height from the base body 12C. It is in.

図17及び図18に示す検査用素子12における検査用接続部12A,12Bの先端部12E,12Fは、基体12Cに立設した基部にタングステンなどを堆積し、その堆積層をFIB(集束イオンビーム)で加工したり、コイルを形成する基板にあらかじめ異方性エッチングを施したりすることで形成される。   17 and 18, tip portions 12E and 12F of inspection connection portions 12A and 12B in the inspection element 12 deposit tungsten or the like on a base portion standing on a base 12C, and deposit the deposited layer on a FIB (focused ion beam). ) Or by performing anisotropic etching in advance on the substrate on which the coil is to be formed.

検査用素子12が図18に示す検査用接続部12A,12Bを有する場合、即ち、集積回路基板110に対して平行な稜線を備えている場合には、第1の検査用接続部12Aと第2の検査用接続部12Bとは、それぞれ点接触とならず、稜線全体が電極パッド111A,111Bに接触するように配置される必要がある。   When the inspection element 12 includes the inspection connection portions 12A and 12B shown in FIG. 18, that is, when the inspection element 12 includes a ridge line parallel to the integrated circuit substrate 110, the first inspection connection portion 12A and the first connection portion It is necessary to arrange the two ridge lines so as to be in contact with the electrode pads 111A and 111B without being in point contact with the second inspection connection portion 12B.

図19は図18に示すような検査用接続部を有する集積回路基板用装置60を示し、(A)は平面図、(B)は側面図、(C)及び(D)は正面図である。図19(C)は第1の弾性部材64が動作しつつある状態を示しており、図19(D)は第1の弾性部材64が動作した状態を示している。図19の各図では、可動式支持部65にカンチレバー状の第1の弾性部材64が接続され、第1の弾性部材64の先端部に第1の支持部材63が接続されている。第2の弾性部材及び第2の支持部材は図示していない。   FIG. 19 shows an integrated circuit board device 60 having an inspection connection section as shown in FIG. 18, wherein (A) is a plan view, (B) is a side view, and (C) and (D) are front views. . FIG. 19C shows a state where the first elastic member 64 is operating, and FIG. 19D shows a state where the first elastic member 64 is operating. In each drawing of FIG. 19, a cantilever-shaped first elastic member 64 is connected to the movable support portion 65, and a first support member 63 is connected to the distal end portion of the first elastic member 64. The second elastic member and the second support member are not shown.

図19(A)乃至(D)に示す第1及び第2の検査用接続部62A,62Bの先端は点状ではなく線状であるので、集積回路基板110の電極パッド111A,111Bとは点接触ではなく線接触となりえる。第1の弾性部材64がカンチレバー状の板バネとなっているので、第1の検査用接続部62Aと第2の検査用接続部62Bとの各先端の稜線を結ぶ仮想線Lが第1の弾性部材64の長手方向に対して傾斜するよう、第1及び第2の検査用接続部62A,62Bが配置されていることが好ましい。第1の弾性部材64の長手方向に対し、仮想線Lが直交していてもよいし、例えば45度傾斜していてもよい。可動式支持部65が集積回路基板110との鉛直方向の距離が狭まって第1の検査用接続部62A、第2の検査用接続部62Bの先端一部だけが集積回路基板110における電極パッド111A,111Bに接触することを避けることができ、第1の検査用接続部62A,第2の検査用接続部62Bにおける先端の稜線全体が、電極パッド111A,111Bにそれぞれ当接する。よって、第1及び第2の検査用接続部62A,62Bと電極パッド111A,111Bとの接触抵抗を小さくすることができる。   Since the tips of the first and second inspection connecting portions 62A and 62B shown in FIGS. 19A to 19D are not dot-like but linear, they are different from the electrode pads 111A and 111B of the integrated circuit substrate 110. It can be a line contact rather than a contact. Since the first elastic member 64 is a cantilever-shaped leaf spring, an imaginary line L that connects the ridge lines at the tips of the first inspection connecting portion 62A and the second inspection connecting portion 62B is the first It is preferable that the first and second inspection connection portions 62A and 62B are arranged so as to be inclined with respect to the longitudinal direction of the elastic member 64. The virtual line L may be orthogonal to the longitudinal direction of the first elastic member 64, or may be inclined by 45 degrees, for example. The movable support portion 65 has a reduced vertical distance from the integrated circuit board 110, and only a part of the tip of the first inspection connection portion 62A and the second inspection connection portion 62B is the electrode pad 111A on the integrated circuit substrate 110. , 111B can be avoided, and the entire ridgeline at the tip of the first inspection connecting portion 62A and the second inspection connecting portion 62B comes into contact with the electrode pads 111A, 111B, respectively. Therefore, the contact resistance between the first and second inspection connection portions 62A and 62B and the electrode pads 111A and 111B can be reduced.

第1及び第2の検査用接続部62A,62Bと電極パッド111A,111Bとの接触抵抗を低減するには、第1及び第2の検査用接続部62A,62Bが電極パッド111A,111Bに対して傾斜しないで当接すればよい。図20(A)乃至(F)は検査用素子62の各種の変形例を模式的に示す底面図である。図20(A)乃至(F)において矢印の方向は、第1の弾性部材64から第1の支持部材63に向いている方向であり、第1の支持部材53の先端方向を示している。   In order to reduce the contact resistance between the first and second inspection connection portions 62A and 62B and the electrode pads 111A and 111B, the first and second inspection connection portions 62A and 62B are connected to the electrode pads 111A and 111B. It is sufficient to contact without tilting. 20A to 20F are bottom views schematically showing various modifications of the inspection element 62. FIG. 20A to 20F, the direction of the arrow is the direction from the first elastic member 64 to the first support member 63, and indicates the front end direction of the first support member 53.

図20(A)に示すように、第1の検査用接続部62Aと第2の検査用接続部62Bとの各稜線が交差していない場合には、第1の検査用接続部62Aと第2の検査用接続部62Bとの間でそれらの配置中心線から基体62Cの何れか一方に少し寄ってダミーの擬似検査用接続部62Dを設ける。この擬似検査用接続部62Dは第1及び第2の検査用接続部62A,62Bと同じ寸法、特に基体62Cからの高さが同じであり、その稜線が第1及び第2の検査用接続部62A,62Bの稜線と同じ方向となるよう、擬似検査用接続部62Dが基体62Cに取り付けられている。この擬似検査用接続部62Dは絶縁物でなることが好ましいが、導電性素材でも第1の検査用接続部62A,第2の検査用接続部62Bから所定の距離を有しかつ電気的に絶縁されていればよい。第1及び第2の検査用接続部62A,62Bは擬似検査用接続部62Dの存在により水平を保って集積回路基板110の電極パッド111A,111Bに接触する。   As shown in FIG. 20A, when the ridgelines of the first inspection connecting portion 62A and the second inspection connecting portion 62B do not intersect, the first inspection connecting portion 62A and the first inspection connecting portion 62A A dummy pseudo-inspection connection portion 62D is provided between the second inspection connection portion 62B and a little closer to either one of the bases 62C from the arrangement center line thereof. The pseudo-inspection connection portion 62D has the same dimensions as the first and second inspection connection portions 62A and 62B, in particular, the same height from the base 62C, and the ridge line is the first and second inspection connection portions. The pseudo-inspection connecting portion 62D is attached to the base 62C so as to be in the same direction as the ridgelines of 62A and 62B. The pseudo-inspection connection portion 62D is preferably made of an insulating material. However, even a conductive material has a predetermined distance from the first inspection connection portion 62A and the second inspection connection portion 62B and is electrically insulated. It only has to be done. The first and second inspection connection portions 62A and 62B are in contact with the electrode pads 111A and 111B of the integrated circuit board 110 while maintaining the horizontal state due to the presence of the pseudo inspection connection portion 62D.

図20(B)に示すように、第1の検査用接続部62Aと第2の検査用接続部62Bとの各稜線が交差していない場合には、第1の検査用接続部62Aと第2の検査用接続部62Bとの間でそれらの配置中心線から基体62Cの何れか一方に少し寄ってダミーの擬似検査用接続部62Dを設ける。この擬似検査用接続部62Dは第1及び第2の検査用接続部62A,62Bと同じ基体62Cからの高さであり、その稜線が第1及び第2の検査用接続部62A,62Bの稜線と直交するよう、擬似検査用接続部62Dが基体62Cに取り付けられている。第1及び第2の検査用接続部62A,62Bは擬似検査用接続部62Dの存在により水平を保って集積回路基板110の電極パッド111A,111Bに接触する。   As shown in FIG. 20B, when the ridge lines of the first inspection connection portion 62A and the second inspection connection portion 62B do not intersect, the first inspection connection portion 62A and the first inspection connection portion 62A A dummy pseudo-inspection connection portion 62D is provided between the second inspection connection portion 62B and a little closer to either one of the bases 62C from the arrangement center line thereof. The pseudo-inspection connection portion 62D has the same height from the base 62C as the first and second inspection connection portions 62A and 62B, and the ridgeline thereof is the ridgeline of the first and second inspection connection portions 62A and 62B. Is connected to the base 62C so as to be orthogonal to the base 62C. The first and second inspection connection portions 62A and 62B are in contact with the electrode pads 111A and 111B of the integrated circuit board 110 while maintaining the horizontal state due to the presence of the pseudo inspection connection portion 62D.

図20(C)に示すように、第1の検査用接続部62Aと第2の検査用接続部62Bとの各稜線が同一線L上に配置されている場合には、第1の検査用接続部62Aと第2の検査用接続部62Bとの間でそれらの配置中心線、つまり2つの稜線をつなぐ延長線から基体62Cの何れか一方に少し寄ってダミーの擬似検査用接続部62Dが設けられている。この擬似検査用接続部62Dは基体62Cから所定の高さを有する。特に、第1及び第2の検査用接続部62A,62Bと同じ高さであるとよい。MEMS素子を集積回路基板に搭載したときと同じ状態となるからである。擬似検査用素子62Dの稜線が第1及び第2の検査用接続部62A,62Bの稜線と直交するよう、擬似検査用接続部62Dが基体62Cに突出して設けられている。この擬似検査用接続部62Dは絶縁物でなることが好ましいが、導電性素材でも第1の検査用接続部62A,第2の検査用接続部62Bから所定の距離を有しかつ電気的に絶縁されていればよい。第1及び第2の検査用接続部62A,62Bは擬似検査用接続部62Dの存在により水平を保って集積回路基板110の電極パッド111A,111Bに接触する。   As shown in FIG. 20C, when the ridge lines of the first inspection connection portion 62A and the second inspection connection portion 62B are arranged on the same line L, the first inspection connection portion Between the connecting portion 62A and the second inspection connecting portion 62B, a dummy pseudo-inspecting connecting portion 62D is located slightly closer to any one of the bases 62C from an arrangement center line thereof, that is, an extended line connecting the two ridge lines. Is provided. The pseudo-inspection connecting portion 62D has a predetermined height from the base body 62C. In particular, it may be the same height as the first and second inspection connecting portions 62A and 62B. This is because the same state as when the MEMS element is mounted on the integrated circuit substrate is obtained. The pseudo-inspection connection portion 62D protrudes from the base 62C so that the ridge line of the pseudo-inspection element 62D is orthogonal to the ridge lines of the first and second inspection connection portions 62A and 62B. The pseudo-inspection connection portion 62D is preferably made of an insulating material. However, even a conductive material has a predetermined distance from the first inspection connection portion 62A and the second inspection connection portion 62B and is electrically insulated. It only has to be done. The first and second inspection connection portions 62A and 62B are in contact with the electrode pads 111A and 111B of the integrated circuit board 110 while maintaining the horizontal state due to the presence of the pseudo inspection connection portion 62D.

図20(D)に示すように、第1の検査用接続部62Aと第2の検査用接続部62Bとの各稜線が同一線L上に配置されている場合には、第1の検査用接続部62Aと第2の検査用接続部62Bとの間でそれらの配置中心線、つまり2つの稜線をつなぐ延長線から基体62Cの何れか一方に少し寄ってダミーの擬似検査用接続部62Dを設ける。この擬似検査用接続部62Dは第1及び第2の検査用接続部62A,62Bと同じ寸法であり、その稜線が第1及び第2の検査用接続部62A,62Bの稜線と平行になるよう、擬似検査用接続部62Dが基体62Cに取り付けられている。この擬似検査用接続部62Dは絶縁物でなることが好ましいが、導電性素材でも第1の検査用接続部62A,第2の検査用接続部62Bから所定の距離を有しかつ電気的に絶縁されていればよい。第1及び第2の検査用接続部62A,62Bは擬似検査用接続部62Dの存在により水平を保って集積回路基板110の電極パッド111A,111Bに接触する。   As shown in FIG. 20D, when the ridge lines of the first inspection connection portion 62A and the second inspection connection portion 62B are arranged on the same line L, the first inspection connection portion 62A is used. A dummy pseudo-inspection connection portion 62D is disposed between the connection portion 62A and the second inspection connection portion 62B by slightly approaching either one of the bases 62C from the center line of their arrangement, that is, an extension line connecting the two ridge lines. Provide. The pseudo-inspection connection portion 62D has the same dimensions as the first and second inspection connection portions 62A and 62B, and its ridgeline is parallel to the ridgelines of the first and second inspection connection portions 62A and 62B. The pseudo-inspection connecting portion 62D is attached to the base 62C. The pseudo-inspection connection portion 62D is preferably made of an insulating material. However, even a conductive material has a predetermined distance from the first inspection connection portion 62A and the second inspection connection portion 62B and is electrically insulated. It only has to be done. The first and second inspection connection portions 62A and 62B are in contact with the electrode pads 111A and 111B of the integrated circuit board 110 while maintaining the horizontal state due to the presence of the pseudo inspection connection portion 62D.

ここで、図20(A)乃至(D)に示す変形例は何れも検査用素子12が2端子である場合を想定しているが、別に検査用素子12が3端子などの多端子であってもよい。この場合には、例えば図20(E)に示すように、図20(D)と同じ位置に第3の検査用接続部62Eを設ければよい。図20(A)乃至(C)の擬似検査用接続部62Dの位置に第3の検査用接続部を設けてもよい。   Here, in all of the modifications shown in FIGS. 20A to 20D, it is assumed that the test element 12 has two terminals, but the test element 12 has a multi-terminal such as three terminals. May be. In this case, for example, as shown in FIG. 20E, a third inspection connecting portion 62E may be provided at the same position as in FIG. A third inspection connection portion may be provided at the position of the pseudo inspection connection portion 62D shown in FIGS.

検査用素子12が2端子である場合であっても、図20(A)乃至(D)に示す変形例ように擬似検査用接続部62Dは1つでなくても2つ以上設けてもよい。例えば図20(F)に示すように、第1の検査用接続部62Aと第2の検査用接続部62Bとの各稜線が同一線L上に配置されている場合には、第1の検査用接続部62Aと第2の検査用接続部62Bとの間でそれらの配置中心線、つまり稜線の延長線から基体62Cの何れか一方に少し寄ってダミーの第1の擬似検査用接続部62Dを設け、第1の検査用接続部62Aと第2の検査用接続部62Bとの間でそれらの配置中心線、つまり稜線の延長線から基体62Cの何れか他方に少し寄ってダミーの第2の擬似検査用接続部62Fを設けてもよい。第1の擬似検査用接続部62Dは第1及び第2の検査用接続部62A,62Bと同じ寸法であるが、第2の擬似検査用接続部62Fは第1及び第2の検査用接続部62A,62Bよりも基体62Cからの高さを低くする。これより、第1及び第2の検査用接続部62A,62Bは第1の擬似検査用接続部62Dの存在だけで、水平を保って集積回路基板110の電極パッド111A,111Bと接触する。なお、第1及び第2の擬似検査用接続部62D,62Fは、その稜線が第1及び第2の検査用接続部62A,62Bの稜線と平行になるよう基体62Cに取り付けられている。第1及び第2擬似検査用接続部62D,62Fは絶縁物でなることが好ましいが、導電性素材でも電気的に絶縁されていればよい。   Even if the inspection element 12 has two terminals, the number of pseudo-inspection connection portions 62D may not be one, but two or more may be provided as in the modification shown in FIGS. . For example, as shown in FIG. 20F, when the ridgelines of the first inspection connecting portion 62A and the second inspection connecting portion 62B are arranged on the same line L, the first inspection is performed. A dummy first pseudo-inspection connection part 62D between the connection part 62A for the inspection and the connection part 62B for the inspection, which is slightly closer to either one of the bases 62C from the center line of the arrangement, that is, the extended line of the ridgeline Between the first inspection connecting portion 62A and the second inspection connecting portion 62B, and a dummy second one slightly closer to either one of the bases 62C from the center line of the arrangement, that is, the extended line of the ridgeline. The pseudo-inspection connection portion 62F may be provided. The first pseudo-inspection connecting portion 62D has the same dimensions as the first and second inspecting connecting portions 62A and 62B, but the second pseudo-inspecting connecting portion 62F is the first and second inspecting connecting portions. The height from the base 62C is made lower than 62A and 62B. As a result, the first and second inspection connection portions 62A and 62B are in contact with the electrode pads 111A and 111B of the integrated circuit board 110 while maintaining the level only by the presence of the first pseudo inspection connection portion 62D. The first and second pseudo inspection connection portions 62D and 62F are attached to the base 62C so that the ridge lines thereof are parallel to the ridge lines of the first and second inspection connection portions 62A and 62B. The first and second pseudo-inspection connection parts 62D and 62F are preferably made of an insulator, but may be electrically insulated even with a conductive material.

図21は、検査用素子と集積回路基板との関係を説明するための模式図であり、(A)はMEMS素子の平面図、(B)は正面図、(C)は具体的な第1の例における検査用素子と集積回路基板との関係を示し、(D)は具体的な第2の例における検査用素子と集積回路基板との関係を示す図である。MEMS素子91が、図21(A)及び(B)に示すように樹脂などの絶縁体91Dと、絶縁体91Dの高さ方向に伸びる第1の電極部91A及び第2の電極部91Bと、第1の電極部91Aと第2の電極部91Bとの間に設けられる受動素子91Cとしてのコイルとで構成されているとする。ここで、コイル91Cは絶縁体91Dの高さ方向に並行に軸を備えており、受動素子91Cとしてのコイルにおいて絶縁体91Dの底面寄りの部位と絶縁体91Dとの間の距離をh1とする。   FIG. 21 is a schematic diagram for explaining the relationship between the testing element and the integrated circuit substrate, where (A) is a plan view of the MEMS element, (B) is a front view, and (C) is a specific first view. The relationship between the testing element and the integrated circuit board in the example of FIG. 7 is shown, and (D) is a diagram showing the relationship between the testing element and the integrated circuit board in the specific second example. As shown in FIGS. 21A and 21B, the MEMS element 91 includes an insulator 91D such as a resin, a first electrode portion 91A and a second electrode portion 91B extending in the height direction of the insulator 91D, Suppose that it is comprised with the coil as the passive element 91C provided between the 1st electrode part 91A and the 2nd electrode part 91B. Here, the coil 91C is provided with an axis parallel to the height direction of the insulator 91D, and the distance between the portion near the bottom surface of the insulator 91D and the insulator 91D in the coil as the passive element 91C is h1. .

検査用素子としては二つの場合が考えられる。一つは図21(C)に示すように、検査用素子92は、MEMS素子91と同じく、絶縁体92Dと第1の電極部92Aと第2の電極部92Bと受動素子92Cとで構成されるとしても、第1の電極部92Aの先端部92E、第2の電極部92Bの先端部92Fは、図示するように、絶縁体92Dの底面、即ち、集積回路基板110との対向面から突出しており、先端部92E,92Fがそれぞれ電極パッド111A,111Bに当接する。この場合、先端部92E,91Fと受動素子92Cの高さは、図21(B)に示す高さh1に等しくする。受動素子92Cとしてのコイルと集積回路基板110との距離が変わらないため、検査用素子92と集積回路基板110との間の浮遊容量が高さh1に起因して異ならない。しかし、第1の電極部92A,第2の電極部92Bの各先端部92E,92Fが絶縁体92Dにおける集積回路基板110の対向面から突出しているので、各先端部92E,92Fの周りの誘電率などが変わる。そのため、図21(C)に示すように、第1の電極部92A、第2の電極部92Bの先端部92E,92Fが電極パッド111A,111Bに当接している状態において、絶縁体92Dの底面と集積回路基板110表面の距離Δhsが、距離h1の1/10以下となるよう、絶縁体92の寸法を設定する。これにより、MEMS素子91と検査用素子92とが電気的に等価とみなせる。   There are two possible cases for the inspection element. As shown in FIG. 21C, the inspection element 92 includes an insulator 92D, a first electrode part 92A, a second electrode part 92B, and a passive element 92C, like the MEMS element 91. Even so, the distal end portion 92E of the first electrode portion 92A and the distal end portion 92F of the second electrode portion 92B protrude from the bottom surface of the insulator 92D, that is, the surface facing the integrated circuit substrate 110, as shown in the figure. The tip portions 92E and 92F are in contact with the electrode pads 111A and 111B, respectively. In this case, the heights of the tip portions 92E and 91F and the passive element 92C are made equal to the height h1 shown in FIG. Since the distance between the coil as the passive element 92C and the integrated circuit board 110 does not change, the stray capacitance between the testing element 92 and the integrated circuit board 110 does not differ due to the height h1. However, since the tip portions 92E and 92F of the first electrode portion 92A and the second electrode portion 92B protrude from the facing surface of the integrated circuit substrate 110 in the insulator 92D, the dielectric around the tip portions 92E and 92F The rate changes. Therefore, as shown in FIG. 21C, the bottom surface of the insulator 92D in a state where the tip portions 92E and 92F of the first electrode portion 92A and the second electrode portion 92B are in contact with the electrode pads 111A and 111B. The dimension of the insulator 92 is set so that the distance Δhs on the surface of the integrated circuit substrate 110 is 1/10 or less of the distance h1. Thereby, the MEMS element 91 and the testing element 92 can be regarded as being electrically equivalent.

検査用素子の二つ目としては、図21(D)に示すように、検査用素子93は、同じく、絶縁体93Dと第1の電極部93Aと第2の電極部93Bと受動素子93Cとで構成されるとしても、第1の電極部93Aの先端部93E、第2の電極部93Bの先端部93Fは、図示するように、絶縁体93Dの底面、即ち、集積回路基板110の対向面から突出しており、先端部93E,93Fがそれぞれ電極パッド111A,111Bに当接する。この場合、絶縁体93Dの底面と受動素子93Cのコイルの下端部位、即ち、絶縁体93Dにおける集積回路基板110との対向面から受動素子93Cの対向面寄りの部位までの高さを、図21(A)に示す高さh1に等しくする。すると、検査用素子93を集積回路基板110に搭載した場合、MEMS素子91を集積回路基板110に搭載した場合と比べて、受動素子93Cとしてのコイルの位置は先端部93E,93Fの突出高さ分だけ高くなる。よって、検査用素子93を集積回路基板110に搭載した場合における検査用素子93と集積回路基板110との間で生じる浮遊容量は、MEMS素子91を集積回路基板110に搭載した場合と比べて異なり、変化する。そのため、図21(D)に示すように、第1の電極部93A、第2の電極部93Bのそれぞれが、絶縁体93Dの底面から突出している長さΔhLが、距離h1の1/10以下となるよう、先端部93E,93Fの寸法を設定する。これにより、MEMS素子91と検査用素子92とが電気的に等価とみなせる。   As the second inspection element, as shown in FIG. 21D, the inspection element 93 includes an insulator 93D, a first electrode part 93A, a second electrode part 93B, and a passive element 93C. Even if configured, the distal end portion 93E of the first electrode portion 93A and the distal end portion 93F of the second electrode portion 93B are, as illustrated, the bottom surface of the insulator 93D, that is, the opposing surface of the integrated circuit substrate 110. The tip portions 93E and 93F are in contact with the electrode pads 111A and 111B, respectively. In this case, the height from the bottom surface of the insulator 93D and the lower end portion of the coil of the passive element 93C, that is, the surface of the insulator 93D facing the integrated circuit board 110 to the portion near the facing surface of the passive element 93C is shown in FIG. It is made equal to the height h1 shown in (A). Then, when the test element 93 is mounted on the integrated circuit board 110, the position of the coil as the passive element 93C is higher than the protruding height of the tip portions 93E and 93F when compared with the case where the MEMS element 91 is mounted on the integrated circuit board 110. It gets higher by the minute. Therefore, the stray capacitance generated between the test element 93 and the integrated circuit board 110 when the test element 93 is mounted on the integrated circuit board 110 is different from that when the MEMS element 91 is mounted on the integrated circuit board 110. ,Change. Therefore, as shown in FIG. 21D, the length ΔhL in which each of the first electrode portion 93A and the second electrode portion 93B protrudes from the bottom surface of the insulator 93D is 1/10 or less of the distance h1. The dimensions of the tip portions 93E and 93F are set so that Thereby, the MEMS element 91 and the testing element 92 can be regarded as being electrically equivalent.

図22は、検査用素子97と押圧手段95との関係を説明するための模式図である。図22では、押圧手段95は図10に示す押圧手段73を想定して示している。検査用素子97は、図21を参照しながら説明したように、第1の検査用接続部97Aと第2の検査用接続部97Bとの間に受動素子97Cとしてのコイルが設けられて構成されており、受動素子97C全体と第1及び第2の検査用接続部97A,97Bの先端部を除いた部分とが樹脂などの絶縁体97Dで覆われている。ここで、受動素子97としてのコイルは、押圧手段95の平板に直交するよう中心軸を有している。このような検査用素子97を片持ち式の押圧手段95に絶縁性の接着層96で取り付けられている場合、受動素子97Cにおける押圧手段95寄りの部位と押圧手段95との距離d2を、受動素子97Cとしてのコイルによる磁界の影響を受けない領域となるよう設定する。   FIG. 22 is a schematic diagram for explaining the relationship between the testing element 97 and the pressing means 95. In FIG. 22, the pressing means 95 is shown assuming the pressing means 73 shown in FIG. As described with reference to FIG. 21, the inspection element 97 is configured by providing a coil as a passive element 97C between the first inspection connection portion 97A and the second inspection connection portion 97B. The entire passive element 97C and the first and second inspection connection portions 97A and 97B excluding the tip portions are covered with an insulator 97D such as a resin. Here, the coil as the passive element 97 has a central axis so as to be orthogonal to the flat plate of the pressing means 95. When such an inspection element 97 is attached to the cantilever-type pressing means 95 with an insulating adhesive layer 96, the distance d2 between the portion near the pressing means 95 in the passive element 97C and the pressing means 95 is set to be passive. The region is set so as not to be affected by the magnetic field by the coil as the element 97C.

図21,図22を参照して説明したように、検査用素子92における第1及び第2の検査用先端部92E,92Fの高さΔhs、検査用素子93における第1及び第2の検査用先端部93E,93Fの高さΔhL、検査用素子97内の受動素子97Cと押圧手段95との距離d2とを、それぞれ所定の範囲とすることにより、検査用素子が集積回路基板の集積回路で構成する回路網と、MEMS素子が集積回路基板の集積回路で構成する回路網と、が等価回路的に同一となるようにすることができる。よって、このように設計された集積回路基板用装置によれば、正確に、集積回路基板が所定の仕様通りの性能を有するかを確認することができる。   As described with reference to FIGS. 21 and 22, the heights Δhs of the first and second inspection tips 92E and 92F in the inspection element 92, and the first and second inspection points in the inspection element 93. By setting the heights ΔhL of the tips 93E and 93F and the distance d2 between the passive element 97C in the test element 97 and the pressing means 95 within a predetermined range, the test element is an integrated circuit of the integrated circuit board. The circuit network to be configured and the circuit network in which the MEMS element is configured by an integrated circuit of an integrated circuit board can be made equivalent in terms of an equivalent circuit. Therefore, according to the device for an integrated circuit board designed in this way, it is possible to accurately check whether the integrated circuit board has a performance according to a predetermined specification.

以上述べたように、本発明によれば、簡単な構成により、集積回路が配設された集積回路基板にMEMS素子を搭載する前に、集積回路基板を正しく検査することができる。   As described above, according to the present invention, the integrated circuit board can be correctly inspected with a simple configuration before the MEMS element is mounted on the integrated circuit board on which the integrated circuit is provided.

10,20,30,40,50,60,70:集積回路基板用検査装置
11,51:ステージ
12,17,33,42,52,62,72,82:検査用素子
12A,12B,32A,32B,52A,52B,62A,62B,62E,72A,72B:検査用接続部
12C,62C:基体
12D,83a:受動素子
12E,12F:先端部
13,43,53,57,63:支持部材
14,54,58,64:弾性部材
73,77:押圧手段
15,65,75:支持部(可動式支持部)
16:押圧手段
32,44:検査用素子本体部
34:パッケージ
34A:支持部
34B:上部
34C:側壁部
34D:凹陥部
34E:接続用端子
56:56A,56B,56C,76:プローブ
59:検査用回路
59A:電源部
59B:測定部
59C,59D,59E:配線
62D,62F:擬似検査用接続部
75a:窪み
75b,75c:支持部の下面
76A:プローブ76を支持する手段
77a,77b,77c,77d,86a,87a,87b:接着層
81:半導体基板
81a:エッチピット
82:レジスト
82:検査用素子
82a:輪郭
82b:型
83a:受動素子
83b,85b:貫通配線
84:受動素子及び貫通配線埋め込み基板
85:絶縁体
85a,85d,86:絶縁基板
85c:貫通配線の先端部
85c,85e,86b:金属配線
86c:配線先端部
91:MEMS素子
91A,92A,93A,97A:第1の電極部
91B,92B,93B,97B:第2の電極部
91C,92C,93C,97C:受動素子
91D,92D,93D:絶縁体
92E,93E:第1の電極部の先端部
92F,93F:第2の電極部の先端部
92,93,97:検査用素子
95:押圧手段
96:接着層
100:機能デバイス
110:集積回路基板
111A,111B,111F:電極パッド
111C:配線・素子
111D:最表面層
111G,111H:駆動電極用パッド(電極パッド)
111I:検査用電極パッド(電極パッド)
113:最表面層
10, 20, 30, 40, 50, 60, 70: Integrated circuit board inspection apparatus 11, 51: Stages 12, 17, 33, 42, 52, 62, 72, 82: Inspection elements 12A, 12B, 32A, 32B, 52A, 52B, 62A, 62B, 62E, 72A, 72B: Inspection connection portion 12C, 62C: Base 12D, 83a: Passive element 12E, 12F: Tip portion 13, 43, 53, 57, 63: Support member 14 , 54, 58, 64: elastic members 73, 77: pressing means 15, 65, 75: support part (movable support part)
16: Pressing means 32, 44: Inspection element body 34: Package 34A: Support 34B: Upper part 34C: Side wall 34D: Recess 34E: Connection terminal 56: 56A, 56B, 56C, 76: Probe 59: Inspection Circuit 59A: Power supply section 59B: Measurement sections 59C, 59D, 59E: Wiring 62D, 62F: Simulated inspection connection section 75a: Depression 75b, 75c: Lower surface 76A of support section: Means 77a, 77b, 77c for supporting probe 76 , 77d, 86a, 87a, 87b: adhesive layer 81: semiconductor substrate 81a: etch pit 82: resist 82: inspection element 82a: contour 82b: mold 83a: passive elements 83b, 85b: through wiring 84: passive element and through wiring Embedded substrate 85: insulators 85a, 85d, 86: insulating substrate 85c: leading end portions 85c, 85e, 86 of the through wiring : Metal wiring 86c: wiring tip 91: MEMS elements 91A, 92A, 93A, 97A: first electrode parts 91B, 92B, 93B, 97B: second electrode parts 91C, 92C, 93C, 97C: passive elements 91D, 92D, 93D: insulators 92E, 93E: tips 92F, 93F of the first electrode part: tips 92, 93, 97 of the second electrode part 95: testing element 95: pressing means 96: adhesive layer 100: function Device 110: Integrated circuit boards 111A, 111B, 111F: Electrode pad 111C: Wiring / element 111D: Outermost surface layer 111G, 111H: Drive electrode pad (electrode pad)
111I: Inspection electrode pad (electrode pad)
113: Outermost surface layer

Claims (15)

パッケージを備えたMEMS素子が搭載されるべき集積回路基板の検査に供され、複数の検査用接続部を有する検査用素子と、前記集積回路基板の電極パッドに前記検査用接続部を押圧する押圧手段と、を備える集積回路基板用評価装置であって、
前記検査用素子と前記集積回路基板を接続して形成される回路と、前記MEMS素子を前記集積回路基板に搭載して形成される回路とが、等価回路として同一となるよう、前記検査用素子を構成し、
前記検査用素子は、前記MEMS素子のパッケージと同一構造で且つ電気配線が形成されたパッケージを有し、該パッケージの前記集積回路基板との当接面には尖り部が突出して形成されており、該尖り部は、前記検査用素子と前記集積回路基板とを接続する際に、該集積回路基板に形成された電極パッドのうち、前記検査用接続部が当接する電極パッドとは別の電極パッドに当接するよう構成され、
さらに、前記押圧手段により前記検査用接続部を前記電極パッドに押圧したとき、前記検査用接続部が変形しないよう、検査用接続部は剛性を有するとともに前記押圧手段は弾性を有することを特徴とする、集積回路基板用検査装置。
A test element used for inspecting an integrated circuit board on which a MEMS element having a package is to be mounted, and a test element having a plurality of test connection parts, and a pressure for pressing the test connection parts to the electrode pads of the integrated circuit board An integrated circuit board evaluation apparatus comprising:
The inspection element so that the circuit formed by connecting the inspection element and the integrated circuit board and the circuit formed by mounting the MEMS element on the integrated circuit board are the same as an equivalent circuit. Configure
The inspection element has a package having the same structure as that of the MEMS element package and an electrical wiring formed, and a pointed portion protrudes from a contact surface of the package with the integrated circuit substrate. The pointed portion is an electrode different from the electrode pad with which the inspection connecting portion abuts among the electrode pads formed on the integrated circuit substrate when the inspection element and the integrated circuit substrate are connected to each other. Configured to abut the pad,
Further, when pressing the test connection to the electrode pad by the pressing means, so that the test connection is not deformed, characterized in that said pressing means having elastic with the test connection is rigid An integrated circuit board inspection apparatus.
MEMS素子が搭載されるべき集積回路基板の検査に供され、複数の検査用接続部を有する検査用素子と、前記集積回路基板の電極パッドに前記検査用接続部を押圧する押圧手段と、を備える集積回路基板用評価装置であって、An inspection element that is used for inspection of an integrated circuit board on which a MEMS element is to be mounted and has a plurality of inspection connection parts, and a pressing means that presses the inspection connection part against an electrode pad of the integrated circuit board, An integrated circuit board evaluation device comprising:
前記検査用素子と前記集積回路基板を接続して形成される回路と、前記MEMS素子を前記集積回路基板に搭載して形成される回路とが、等価回路として同一となるよう、前記検査用素子を構成し、前記押圧手段により前記検査用接続部を前記電極パッドに押圧したとき、前記検査用接続部が変形しないよう該検査用接続部は剛性を有するとともに、前記押圧手段は弾性を有し、The inspection element so that the circuit formed by connecting the inspection element and the integrated circuit board and the circuit formed by mounting the MEMS element on the integrated circuit board are the same as an equivalent circuit. The inspection connecting portion has rigidity and the pressing means has elasticity so that the inspection connecting portion is not deformed when the inspection connecting portion is pressed against the electrode pad by the pressing means. ,
さらに、前記検査用素子には、前記MEMS素子の回路素子と同一の素子を保持する絶縁体が設けられると共に、該絶縁体の前記集積回路基板との対向面から突出して疑似検査用接続部及び前記複数の検査用接続部が設けられ、前記押圧手段が前記検査用接続部を前記電極パッドに押圧する際に、前記疑似検査用接続部により前記検査用素子を水平に保って前記検査用接続部を前記電極パッドに接触させることを特徴とする、集積回路基板用検査装置。Further, the inspection element is provided with an insulator that holds the same element as the circuit element of the MEMS element, and protrudes from a surface of the insulator facing the integrated circuit substrate, and a pseudo inspection connection portion and The plurality of inspection connection portions are provided, and when the pressing means presses the inspection connection portion against the electrode pad, the inspection connection is held horizontally by the pseudo inspection connection portion. An inspection apparatus for an integrated circuit board, wherein the part is brought into contact with the electrode pad.
前記検査用接続部は、前記集積回路基板に対して平行な稜線を先端に有するよう、前記絶縁体の前記集積回路基板との対向面から突出しており、The inspection connecting portion protrudes from the surface of the insulator facing the integrated circuit substrate so as to have a ridge line parallel to the integrated circuit substrate at the tip,
前記検査用接続部の稜線が前記押圧手段の長手方向に垂直となるように前記検査用接続部が配置されており、前記押圧手段が前記検査用接続部を前記電極パッドに押圧することにより、前記検査用接続部の稜線が前記電極パッドに線接触することを特徴とする、請求項2に記載の集積回路基板用検査装置。The inspection connecting portion is arranged so that the ridge line of the inspection connecting portion is perpendicular to the longitudinal direction of the pressing means, and the pressing means presses the inspection connecting portion against the electrode pad, The integrated circuit board inspection apparatus according to claim 2, wherein a ridge line of the inspection connection portion is in line contact with the electrode pad.
前記検査用素子には、前記検査用接続部が一直線上に並べて配置されており、かつ前記疑似検査用接続部が前記検査用接続部と一直線上に並ばない位置に絶縁されていることを特徴とする、請求項2に記載の集積回路基板用検査装置。In the inspection element, the inspection connection portions are arranged in a straight line, and the pseudo inspection connection portion is insulated at a position not aligned with the inspection connection portion. The integrated circuit board inspection apparatus according to claim 2. 前記検査用素子は、前記MEMS素子電極部と同一の断面寸法を有する前記検査用接続部と、前記MEMS素子回路素子と同一構造の素子と、を有することを特徴とする、請求項1又は2に記載の集積回路基板用検査装置。 2. The inspection element includes the inspection connection portion having the same cross-sectional dimension as an electrode portion of the MEMS element , and an element having the same structure as a circuit element of the MEMS element. Or the inspection apparatus for an integrated circuit board according to 2 above. 前記検査用素子は、前記MEMS素子回路素子としての受動素子と同一構造の素子を含んでおり、
前記検査用素子が前記集積回路基板に接続されて前記集積回路基板における集積回路と高周波回路を形成することを特徴とする、請求項1又は2に記載の集積回路基板用検査装置。
The inspection element includes an element of the passive element and the same structure as the circuit elements of the MEMS device,
The integrated circuit board inspection apparatus according to claim 1, wherein the inspection element is connected to the integrated circuit board to form an integrated circuit and a high-frequency circuit in the integrated circuit board.
前記押圧手段は絶縁性の支持手段と非絶縁性の弾性手段を含んでおり、前記検査用素子が前記支持手段に取り付けられており、
前記支持手段は、前記検査用素子が前記集積回路基板に押圧されている状態で前記検査用素子と該集積回路基板における集積回路とで形成される回路網の特性への影響を無視できる程度に、前記検査用素子中の導通部を前記弾性手段から離隔していることを特徴とする、請求項1又は2に記載の集積回路基板用検査装置。
The pressing means includes an insulating support means and a non-insulating elastic means, and the inspection element is attached to the support means,
The support means is capable of ignoring an influence on characteristics of a circuit network formed by the inspection element and the integrated circuit on the integrated circuit substrate in a state where the inspection element is pressed against the integrated circuit substrate. , wherein the spaced apart a conductive portion in said test device from the resilient means, the integrated circuit board inspection apparatus according to claim 1 or 2.
前記検査用素子は前記受動素子としてコイル素子を含んでおり、
前記弾性手段は、当該コイル素子で生じる磁場の最大強度の1/10以下に減衰する領域に設けられていることを特徴とする、請求項に記載の集積回路基板用検査装置。
The inspection element includes a coil element as the passive element,
8. The integrated circuit board inspection apparatus according to claim 7 , wherein the elastic means is provided in a region that attenuates to 1/10 or less of the maximum intensity of the magnetic field generated by the coil element.
前記検査用素子は、前記MEMS素子のパッケージと同一構造パッケージを有することを特徴とする、請求項に記載の集積回路基板用検査装置。 The integrated circuit board inspection apparatus according to claim 2 , wherein the inspection element has a package having the same structure as a package of the MEMS element. 前記検査用素子のパッケージには電気配線が形成されており、パッケージ前記集積回路基板との当接面には尖り部突出形成されており、該尖り部は、前記検査用素子と前記集積回路基板とを接続する際に、前記集積回路基板に形成された電極バッドのうち、検査用接続部が当接する電極パッドとは別の電極パッドに当接することを特徴とする、請求項に記載の集積回路基板用検査装置。 Wherein the package of the inspection device and the electrical wiring is formed, pointed portions at the surface in contact with the integrated circuit substrate of the package is formed to project, 該尖Ri section, said testing device The electrode pad formed on the integrated circuit board, when connected to the integrated circuit board, abuts on an electrode pad different from the electrode pad on which the connection portion for inspection abuts. 9. The inspection apparatus for an integrated circuit board according to 9 . 前記検査用接続部は、該検査用接続部が前記電極パッドに押圧されている状態で前記検査用素子と前記集積回路基板集積回路とで形成される回路網の特性への影響を無視できる程度に、前記絶縁体前記集積回路基板との対向面から突出していることを特徴とする、請求項に記載の集積回路基板用検査装置。 The inspection connection portion can ignore the influence on the characteristics of the circuit network formed by the inspection element and the integrated circuit of the integrated circuit substrate in a state where the inspection connection portion is pressed against the electrode pad. extent, characterized in that said protruding from the surface facing the said integrated circuit an insulating substrate, an integrated circuit board inspection apparatus according to claim 2. 前記検査用素子における受動素子がコイル素子であり、
前記検査用素子が前記電極パッドに押圧されている状態で、前記絶縁体前記集積回路基板との対向面から前記検査用接続部が突出している高さが、前記絶縁体内の前記コイル素子の最も前記集積回路基板側に近い部位と該集積回路基板までの距離の1/10以下であるとともに、
前記距離が、前記MEMS素子における絶縁体前記集積回路基板との対向面から前記MEMS素子における回路素子の最も該対向面寄りの部位からの寸法に等しいことを特徴とする、請求項11に記載の集積回路基板用検査装置。
The passive element in the inspection element is a coil element,
In a state in which the inspection device is pressed against the electrode pad, a height where the integrated circuit and the test connection from the surface facing the substrate of the insulator is protruded it is of the coil element of the insulating body 1/10 or less of the distance from the part closest to the integrated circuit board side to the integrated circuit board,
Said distance, characterized in that equal from the surface facing the said integrated circuit substrate of the insulator in the MEMS device to the dimensions of the site of most the opposing surface side of the circuit elements in the MEMS device, according to claim 11 Inspection equipment for integrated circuit boards.
前記検査用素子受動素子がコイル素子であり、
前記検査用素子が前記電極パッドに押圧されている状態で、前記絶縁体前記集積回路基板との対向面から前記検査用接続部が突出している高さが、前記絶縁体内の前記コイル素子の最も前記集積回路基板側に近い部位と前記絶縁体の対向面との距離の1/10以下であるとともに、
前記距離が、前記MEMS素子における絶縁体の前記集積回路基板との対向面から前記MEMS素子における回路素子の最も該対向面寄りの部位からの寸法に等しいことを特徴とする、請求項11に記載の集積回路基板用検査装置。
The passive element of the inspection element is a coil element,
In a state in which the inspection device is pressed against the electrode pad, a height where the integrated circuit and the test connection from the surface facing the substrate of the insulator is protruded it is of the coil element of the insulating body And 1/10 or less of the distance between the portion closest to the integrated circuit substrate side and the opposing surface of the insulator,
Said distance, characterized in that equal from the surface facing the said integrated circuit substrate of the insulator in the MEMS device to the dimensions of the site of most the opposing surface side of the circuit elements in the MEMS device, according to claim 11 Inspection equipment for integrated circuit boards.
前記集積回路基板上の電力供給用電極パッド及び出力信号用電極パッドに接続する複数のプローブと、該複数のプローブを支持するプローブ用支持手段とをさらに有することを特徴とする、請求項1又は2に記載の集積回路基板用検査装置。 And further comprising a plurality of probes connected to the integrated circuit electrode pad for power supply electrode pads and the output signal on the substrate, and a probe supporting means for supporting a plurality of probes, according to claim 1 or 2. The inspection apparatus for an integrated circuit board according to 2 . 前記プローブ用支持手段と前記押圧手段とがそれぞれ別体で構成されていることを特徴とする、請求項14に記載の集積回路基板用検査装置。 15. The inspection apparatus for an integrated circuit board according to claim 14 , wherein the probe support means and the pressing means are configured separately.
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