JP5492162B2 - Microstructure transfer device - Google Patents

Description

  The present invention relates to a microstructure transfer apparatus used when a microstructure is formed on a substrate.

  Conventionally, a photolithography technique has been often used as a technique for processing a fine pattern required for a semiconductor device or the like. However, as the pattern becomes finer and the required processing dimensions become as small as the wavelength of light used for exposure, it is difficult to cope with the photolithography technique. Therefore, instead of this, an electron beam drawing apparatus, which is a kind of charged particle beam apparatus, has come to be used.

Unlike the collective exposure method in pattern formation using a light source such as i-line or excimer laser, pattern formation using this electron beam employs a method of directly drawing a mask pattern. Therefore, the exposure (drawing) time increases as the pattern to be drawn increases, and it takes time to complete the pattern. As the degree of integration of the semiconductor integrated circuit increases, the time required for pattern formation increases. There is a concern that the throughput will decrease.
Therefore, in order to increase the speed of the electron beam lithography system, development of a collective figure irradiation method that combines various shapes of masks and forms an electron beam with a complex shape by irradiating them with an electron beam in a lump. It is being advanced. However, while miniaturization of patterns has progressed, there has been a drawback that the cost of the apparatus becomes high, such as an increase in the size of the electron beam drawing apparatus and high-precision control of the mask position.

On the other hand, a nanoimprint technique is known as a technique for performing highly accurate pattern formation at a low cost. In this nanoimprint technology, a stamper on which unevenness (surface shape) corresponding to the unevenness of a fine pattern to be formed is embossed, for example, on a transfer target obtained by forming a resin layer on a predetermined substrate. The fine pattern can be transferred to the resin layer.
In particular, when a photo-curable resin composition is used for the resin layer, the resin layer can be cured by irradiating with ultraviolet light using a light source such as a high-pressure mercury lamp or LED, and high-precision can be obtained in a short time. A pattern can be produced.

  Such nanoimprint technology has been studied for application to formation of a recording bit pattern on a large-capacity recording medium and formation of a pattern of a semiconductor integrated circuit. By the way, when the nanoimprint technology is applied to a semiconductor, it is necessary to align the transfer pattern with high accuracy. For this reason, deformation of the stamper pattern and distortion at the nanometer level of the transferred material become problems.

  2. Description of the Related Art Conventionally, there has been known a fine structure transfer apparatus that corrects deformation of a pattern generated in a stamper by bending the stamper by moving the edge of the stamper in the surface direction by an actuator arranged so as to surround the outer periphery of the stamper. (For example, refer to Patent Document 1 and Patent Document 2). However, since this fine structure transfer device is provided so that the actuator as the correction mechanism surrounds the outer periphery of the stamper, there is a problem that the size of the device increases in the surface direction of the stamper.

  Further, there is known a fine structure transfer device in which an actuator is provided on the back side of the stamper (the surface opposite to the transfer surface) (see, for example, Patent Document 3 and Patent Document 4). In this fine structure transfer apparatus, unlike the above-described fine structure transfer apparatus (see, for example, Patent Document 1 and Patent Document 2), an actuator is disposed on the back side of the stamper. It seems that an increase in size can be avoided.

Special table 2007-535121 gazette JP 2010-80918 A JP 2007-15375 A JP 2010-272860 A

However, in the conventional fine structure transfer device, when the photocurable resin composition layer constituting the transfer object is photocured in a state where the stamper is embossed, light is transferred to the transfer object via the stamper. Irradiated. Therefore, in the fine structure transfer apparatuses of Patent Document 3 and Patent Document 4, an actuator must be disposed on the back side of the stamper so that light irradiation to the transfer target is not hindered.
That is, in order to dispose the actuator on the back side of the stamper so that light irradiation to the transfer target is not hindered, the stamper must be substantially extended in the surface direction.
Therefore, a fine structure transfer apparatus in which an actuator is provided around the stamper (see, for example, Patent Document 1 and Patent Document 2), and a fine structure transfer apparatus in which an actuator is provided on the back side of the stamper (see, for example, Patent Document 3 and Patent Document 4). In either case, the apparatus becomes larger in the surface direction of the stamper. In particular, this tendency is remarkable in a multi-stamper in which a plurality of stampers are arranged adjacent to each other in the same plane.

  SUMMARY OF THE INVENTION An object of the present invention is to provide a fine structure transfer apparatus that can achieve a reduction in size in the surface direction of a stamper while having a stamper deformation mechanism that corrects distortion of the stamper.

  The present invention that solves the above-described problems is a microstructure transfer device that transfers a microstructure to a photocurable resin composition on a transfer object using a stamper having a microstructure. The stamper is formed by the microstructure. A microstructure-forming layer to be formed, a light irradiation layer provided on the opposite side of the microstructure-forming surface in the microstructure-forming layer and along the microstructure-forming layer, and the microstructure formation in the light-irradiation layer A deformation mechanism that is disposed on a surface opposite to the surface on the layer side and that curves the stamper so as to be convex toward the transfer target.

  According to the present invention, it is possible to provide a fine structure transfer apparatus that can achieve size reduction in the surface direction of a stamper while having a stamper deformation mechanism that corrects the distortion of the stamper.

BRIEF DESCRIPTION OF THE DRAWINGS It is a structure explanatory drawing of the fine structure transfer apparatus which concerns on embodiment of this invention, (a) is a longitudinal cross-sectional view which shows a fine structure transfer apparatus typically, (b) is on the light irradiation layer of a fine structure transfer apparatus. It is a top view which shows typically the position of the arrange | positioned piezoelectric element. (A) to (c) are process explanatory views when transferring the fine structure of the stamper to the transfer object using the fine structure transfer apparatus according to the embodiment of the present invention. (A) is a schematic diagram which shows the positional relationship of the light irradiation layer and light source in the microstructure transfer apparatus which concerns on other embodiment of this invention, (b) is IIIb-IIIb sectional drawing of (a). It is a schematic diagram which shows the example which changed the position of the light source, and is a figure corresponding to Fig.3 (a). It is a schematic diagram which shows the example which provided the metal layer which can be shrink | contracted as a deformation | transformation mechanism on the light irradiation layer, and is a figure corresponding to FIG.1 (b). (A) is a configuration explanatory view of the microstructure transfer device of the present invention provided with a multi-stamper in which a plurality of stampers are arranged in parallel, and (b) is a plan view showing the arrangement of stampers.

Embodiments of the present invention will be described in detail with reference to the drawings as appropriate.
The fine structure transfer apparatus of the present invention includes a light irradiation layer in the stamper for irradiating light toward the photocurable resin composition of the transferred object when the fine structure of the stamper is transferred to the transferred object. The main feature is that the back side of the light irradiation layer is provided with a stamper deformation mechanism that corrects the nanometer-level distortion of the fine structure in.
FIG. 1A to be referred to next is a configuration explanatory view of the fine structure transfer device according to the embodiment of the present invention, and is a longitudinal sectional view schematically showing the fine structure transfer device.

  As shown in FIG. 1A, the fine structure transfer device 15 according to the present embodiment is a device that transfers the fine structure of the stamper 2 to the transfer target 1, and the transfer target 1 disposed on the stage 9. The stamper 2 is pressed against. Note that the shape of the stamper 2 in the present embodiment is a substantially quadrangular prism shape with a square planar shape, but this shape is not particularly limited, and may be a cylinder or an ellipse depending on the planar shape of the transferred substrate 1a. Columns, polygonal columns other than squares, and the like can be set as appropriate.

  The transferred body 1 is composed of a transferred substrate 1a and a resin thin film 1b made of a photocurable resin composition applied on the transferred substrate 1a. There is no restriction | limiting in particular as the to-be-transferred substrate 1a, It can set suitably according to the use of the fine structure obtained by transcribe | transferring a fine structure, Specifically, for example, a silicon wafer, various metal materials, glass , Quartz, ceramic, resin and the like. There is no restriction | limiting in particular as a planar shape of the to-be-transferred substrate 1a, For example, circular, an ellipse, a polygon etc. are mentioned. The transferred substrate 1a may have a central hole.

The resin thin film 1b is formed by applying a photocurable resin composition to be described later on the transfer substrate 1a. Examples of the coating method of the photocurable resin composition include a spin coating method, a dispensing method, an ink jet method, and a spray method.
A coupling layer or a metal thin film can be formed on the surface of the transfer substrate 1a in order to improve the adhesion to the resin thin film 1b.

  The stage 9 detachably fixes the transfer target 1 by vacuum suction, fasteners, jigs, or the like. Further, the stage 9 is transported along a predetermined path by a transport mechanism (not shown). For example, the stage 9 is from a resin coating device (not shown) that applies a photocurable resin composition to the substrate 1a to be transferred. It can be moved together with the transfer target 1 to a position below the stamper 2.

  As shown in FIG. 1A, the stamper 2 includes a fine structure forming layer 4 in which a fine structure (not shown) is formed in order from the side facing the transfer target 1, and the fine structure forming layer 4 A light irradiation layer 5 provided along the fine structure forming layer 4 on the side opposite to the fine structure forming surface (the surface facing the transfer target 1), and the fine structure forming layer 4 side of the light irradiation layer 5 And a piezoelectric element 6 disposed on a surface opposite to the surface. The piezoelectric element 6 corresponds to a “deformation mechanism” in the claims, and as described later, the piezoelectric element 6 is self-contracted by applying a predetermined voltage to the electrode 6a (see FIG. 1B). The stamper 2 is bent so as to be convex toward the transfer target 1 side.

Further, the stamper 2 in this embodiment includes a light reflection layer 11 in the light irradiation layer 5 as described later.
In addition, the stamper 2 in this embodiment has a support base material 3 for the fine structure formation layer 4 between the fine structure formation layer 4 and the light irradiation layer 5. The substrate 3 can be omitted.

The fine structure forming layer 4 has a square planar shape, and a fine structure is formed on a surface facing the transfer target 1.
The fine structure of the fine structure forming layer 4 is a structure formed with a size of nanometer to micrometer, specifically, a dot pattern in which a plurality of minute protrusions are regularly arranged, and conversely Examples thereof include a pattern in which minute concave portions are regularly arranged, a lamellar pattern (line and space pattern) in which a plurality of stripes are regularly arranged, and the like.

  The microstructure forming layer 4 in the present embodiment forms a resin layer (not shown) by applying a photocurable resin composition to be described later on a predetermined support substrate 3, and a master mold is formed on the resin layer. It can be formed by embossing (not shown) and curing. Incidentally, the fine structure of the master mold can be formed by a known technique such as an electron beam drawing method. That is, the microstructure forming layer 4 in this embodiment uses a master mold replica master. This fine structure forming layer 4 is light transmissive.

The planar shape of the support base material 3 in the present embodiment is the same square as the fine structure forming layer 4.
The supporting base material 3 is a material that can be bent together with the light irradiation layer 5 and the fine structure forming layer 4 when the piezoelectric element 6 contracts as will be described later, and is light transmissive. There is no particular limitation.
As a material of the support base material 3, what has intensity | strength and workability, such as glass, quartz, resin, is desirable. In addition, the surface of the support base 3 can be subjected to a surface treatment in order to enhance the adhesive force with the fine structure forming layer 4.
Moreover, the support base material 3 can also be comprised by 2 or more types of layers from which an elasticity modulus differs. In such a support base material 3, there is no restriction | limiting in particular about the lamination order of a layer with a high elastic modulus, and a low layer, a combination, the number of layers, etc.

Examples of the support substrate 3 having two or more types of layers include, for example, one in which two or more types of the above materials are selected to form each layer, or a combination of a layer made of the above materials and a layer made of a resin. Or a combination of layers made of resin.
Specific examples of the resin described above include, for example, phenol resin (PF), urea resin (UF), melamine resin (MF), polyethylene terephthalate (PET), unsaturated polyester (UP), alkyd resin, vinyl ester resin, epoxy Resin (EP), polyimide (PI), polyurethane (PUR), polycarbonate (PC), polystyrene (PS), acrylic resin, polyamide (PA), ABS resin, AS resin, AAS resin, polyvinyl alcohol, polyethylene (PE), Polypropylene (PP), polytetrafluoroethylene (PTFE), polyarylate, cellulose acetate, polypropylene (PP), polyethylene naphthalate (PEN), polybutylene terephthalate (PBT), polyphenylene sulfide (PPS), polyphenylene Niren'okishido, cycloolefin polymer, polylactic acid, silicone resin, diallyl phthalate resin and the like.

  As the photocurable resin composition for forming the fine structure forming layer 4 on the support substrate 3, the same photocurable resin composition as that for forming the resin thin film 1 b of the transfer target 1 is used. Can be used.

  Specific examples of the photocurable resin composition include, for example, poly (meth) acrylate methyl, ethoxylated bisphenol A acrylate, aliphatic urethane acrylate, polyester acrylate, polyethylene terephthalate, having a (meth) acrylate group at the terminal. , Polystyrene, polycarbonate, acrylic-modified alicyclic epoxide, bifunctional alcohol ether type epoxide, acrylic silicone, acrylic dimethylsiloxane, and the like.

  Moreover, as a photocurable resin composition, a monomer can also be used. As what has a (meth) acrylate group or a vinyl group at the terminal, for example, methoxytriethylene glycol (meth) acrylate, methoxypolyethylene glycol (Meth) acrylate, isobornyl (meth) acrylate, octoxypolyethylene glycol (meth) acrylate, 2-hydroxy-3-phenoxypropyl (meth) acrylate, isostearyl (meth) acrylate, lauryl (meth) acrylate, polyethylene glycol di ( (Meth) acrylate, 1,10-decanediol di (meth) acrylate, cyclodecane dimethanol di (meth) acrylate, ethoxylated 2-methyl-1,3-propanediol di (meth) acrylate, neopen Diglycol di (meth) acrylate, 2-hydroxy-3-acryloxypropyl methacrylate, 1,6-hexanediol di (meth) acrylate, 1,9-nonanediol di (meth) acrylate, dipropylene glycol diacrylate, tri Propylene glycol di (meth) acrylate, polypropylene glycol di (meth) acrylate, ethylene glycol di (meth) acrylate, polyethylene glycol di (meth) acrylate, triethylene glycol di (meth) acrylate, tetraethylene glycol di (meth) acrylate, Ethoxylated isocyanuric acid triacrylate, ethoxylated trimethylolpropane tri (meth) acrylate, trimethyl pool propane tri (meth) acrylate, propoxylation Limethylolpropane triacrylate, pentaerythritol triacrylate, ethoxylated pentaerythritol tetra (meth) acrylate, ditrimethylolpropane tetra (meth) acrylate, propoxylated pentaerythritol tetra (meth) acrylate, pentaerythritol tetra (meth) acrylate, dipenta Examples include erythritol hexa (meth) acrylate, cyclohexyl (meth) acrylate, cyclopentanyl (meth) acrylate, cyclopentenyl (meth) acrylate, and adamantchel (meth) acrylate.

  Moreover, as a photocurable resin composition, as what has an epoxy group at the terminal, for example, alicyclic epoxide, modified alicyclic epoxide, bisphenol A epoxide, hydrogenated bisphenol A epoxide, bisphenol F epoxide, Novolac epoxide, aliphatic cyclic epoxide, naphthalene epoxide, biphenyl epoxide, bifunctional alcohol ether epoxide, 1,6-hexanediol glycidyl ether, 1,4-butanediol glycidyl ether, epoxy silicone, epoxy silsesquioxy Sun and so on.

  Examples of those having an oxetanyl group include 3-ethyl-3-hydroxymethyloxetane, 1,4-bis [(3-ethyl-3-oxetanylmethoxy) methyl] benzene, 3-ethyl-3- (phenoxy). Methyl) oxetane, di [1-ethyl (3-oxetanyl)] methyl ether, 3-ethyl-3- (2-ethylhexyloxymethyl) oxetane, 3-ethyl-3-{[3- (triethoxysilyl) propoxy Methyl} oxetane, oxetanylsilsesquioxane, phenol novolac oxetane, and the like.

Examples of the organic component having a vinyl group include ethylene glycol divinyl ether, diethylene glycol divinyl ether, triethylene glycol divinyl ether, tetraethylene glycol divinyl ether, butanediol divinyl ether, hexanediol divinyl ether, cyclohexanedimethanol divinyl ether, Di (4-vinyloxy) butyl isophthalate, di (4-vinyloxy) butyl glutarate, di (4-vinyloxy) butyl trimethylolpropane trivinyl ether, 2-hydroxyethyl vinyl ether, hydroxybutyl vinyl ether, hydroxyhexyl vinyl ether, vinyl Examples thereof include silicone and vinyl silsesquioxane.
As mentioned above, although the monomer component which has any functional group of an epoxy group, oxetanyl group, and vinyl ether group was illustrated, this invention is not limited to these.

  Moreover, the photocurable resin composition contains a polymerization initiator. Known polymerization initiators can be used, and examples thereof include benzyl ketal, α-hydroxyketone, α-aminoketone, acylphosphine oxide, titanocenone, oxyphenylacetate ester, and oxime ester. More specifically, 2,2-dimethoxy-1,2-diphenylethane-1-one, 1-hydroxy-cyclohexyl-phenyl ketone, 2-hydroxy-2-methyl-1-phenylpropan-1-one, benzophenone , 1- [4- (2-hydroxyethoxy) -phenyl] -2-hydroxy-2-methyl-1-propan-1-one, 2-methyl-1 [4- (methylthio) phenyl] -2-morpholine Nopropan-1-one, 2-benzyl-2-dimethylamino-1- (4-morpholinophenyl) -butanone-1, bis (2,6-dimethoxybenzoyl) -2,4,4-trimethyl-pentylphos Finoxide, 2-hydroxy-2-methyl-1-phenylpropan-1-one, bis (2,4,6-trimethylbenzoyl) -phenylphenol Scan fin oxide, and the like. These can be applied alone, but can also be used in combination of two or more.

  The reaction initiator for initiating the reaction of the epoxy group and the oxetanyl group is an electrophile, has a cation generation source, and is not particularly limited as long as the organic component is cured by light. A photocationic polymerization initiator can be used. Examples thereof include iron-allene complex compounds, aromatic diazonium salts, aromatic iodonium salts, aromatic sulfonium salts, pyridinium salts, aluminum complexes / silyl ethers, protonic acids, Lewis acids, and the like.

  Specific examples of the cationic polymerization initiator that initiates curing by ultraviolet rays include IRGACURE 261 (Ciba Geigy), Optmer SP-150 (ADEKA), Optmer SP-151 (Asahi Denka Kogyo), Optomer. SP-152 (Asahi Denka Kogyo), Optomer SP-170 (ADEKA), Optmer SP-171 (ADEKA), Optmer SP-172 (ADEKA), UVE-1014 (General Electronics) , CD-1012 (manufactured by Sartomer), Sun Aid SI-60L (manufactured by Sanshin Chemical Industry), Sun Aid SI-80L (manufactured by Sanshin Chemical Industry), Sun Aid SI-100L (manufactured by Sanshin Chemical Industry), Sun Aid SI-110 (manufactured by Sanshin Chemical Industry Co., Ltd.), Sun-Aid SI-180 (Sanshin Chemical Industry Co., Ltd.) CI-2640 (manufactured by Nippon Soda Co., Ltd.), CI-2439 (manufactured by Nippon Soda Co., Ltd.), CI-2624 (manufactured by Nippon Soda Co., Ltd.), CI-2481 (manufactured by Nippon Soda Co., Ltd.), Uvacure 1590 (Daicel UCB), Uvacure 1591 (Daicel UCB), RHODORSIL PhotoInitiator 2074 (Rhone-Poulein), UVI-6990 (Union Carbide), BBI-103 (Midori Chemical), MPI-103 (Midori Chemical), TPS-103 (Midori Chemical Co., Ltd.), MDS-103 (Midori Chemical Co., Ltd.), DTS-103 (Midori Chemical Co., Ltd.), NAT-103 (Midori Chemical Co., Ltd.), NDS-103 (Midori Chemical Co., Ltd.), CYRAURE UVI6990 ( Union Carbide Japan). These can be applied alone, but can also be used in combination of two or more. In addition, a known photopolymerization initiator can also be applied.

  Further, a release layer for promoting peeling may be formed on the surface of the fine structure forming layer 4. Examples of the release layer include those made of a fluorine-based material, silicone, grafted hydrocarbon chain, diamond-like carbon, metal, etc., and photocuring of the transfer target 1 on the surface of the microstructure forming layer 4. There is no particular limitation as long as the adhesion of the conductive resin composition can be prevented.

Further, the fine structure forming layer 4 is formed on the surface of the light irradiation layer 5 to be described below, and the light irradiation layer 5 also serves as the support base material 3, whereby the support base material 3 can be omitted.
Further, instead of the fine structure forming layer 4 made of the photocurable resin composition, the fine structure is formed on a transparent substrate such as glass, quartz, resin, etc. by photolithography, focused ion beam lithography, electron beam drawing, or the like. The formed one can also be used. Even in this case, the supporting substrate 3 can be omitted.

  The planar shape of the light irradiation layer 5 is the same square as the support substrate 3. As will be described later, the light irradiation layer 5 is formed when the resin thin film 1b made of a photocurable resin composition is photocured by pressing the fine structure forming layer 4 against the resin thin film 1b of the transfer object 1. 1b is irradiated with light. More specifically, the light irradiation layer 5 scatters or polarizes light emitted from the light source 8 to be described next so that the film surface of the resin thin film 1b is uniformly irradiated with light. It guides light.

  The light irradiation layer 5 is not limited as long as it has such light scattering property or polarization property and can be curved in accordance with the piezoelectric element 6 as it shrinks as will be described later. And those made of a light-transmitting material such as glass or resin. Specific examples of the light irradiation layer 5 include, for example, a surface roughened on the interface with the support base 3 described above, a surface subjected to polarization processing on the interface, and a microprism on the interface. Examples include those subjected to treatment, and those containing a dispersed phase (light scattering factors such as fine particles and fine fibers) in a transparent continuous phase (resin continuous phase, matrix resin). Among these, those containing a dispersed phase in the transparent continuous phase are desirable, and those containing a transparent dispersed phase having a refractive index different from that of the continuous phase are more desirable.

In the light irradiation layer 5 in the present embodiment, the light reflection layer 11 is formed on the surface opposite to the side facing the fine structure forming layer 4. The light reflection layer 11 is formed by partially removing the surface of the light irradiation layer 5 on which the piezoelectric element 6 described below is disposed.
The light reflecting layer 11 prevents light irradiated into the light irradiation layer 5 from the light source 8 described below from leaking through the surface opposite to the side facing the fine structure forming layer 4. Is for. The light reflecting layer 11 can be formed, for example, by depositing silver on the surface of the light irradiation layer 5.

  The light source 8 in the present embodiment is arranged so that the light irradiation port 8 a faces the edge of the light irradiation layer 5. Examples of the light source 8 include a high-pressure mercury lamp, an LED, and an organic EL.

  Next, FIG. 1B referred to is a plan view schematically showing the position of the piezoelectric element arranged on the light irradiation layer of the fine structure transfer apparatus. FIG. 1B is a plan view showing a state in which the piezoelectric element 6 is viewed from the pressurizing mechanism 10 side of FIG. 1A, but the light reflection layer 11 formed on the light irradiation layer 5. Are omitted for convenience of drawing.

  As shown in FIG. 1B, the piezoelectric element 6 as a deformation mechanism in the present embodiment has an elongated shape having electrodes 6a at both ends thereof, and four are arranged on the light irradiation layer 5. Specifically, each of the piezoelectric elements 6 is arranged along four square sides of the light irradiation layer 5.

  The piezoelectric element 6 in this embodiment contracts in the direction of arrow S in FIG. 1B when a predetermined voltage is applied to the electrodes 6a provided at both ends. Further, both ends of the piezoelectric element 6 on which the electrode 6a is provided are fixed to the surface of the light irradiation layer 5, and when the voltage is applied to the electrode 6a and the piezoelectric element 6 is self-contracted, the both ends are fixed to the light irradiation layer 5. The both end portions will be attracted to each other. That is, the self-contracted piezoelectric element 6 bends (curves) the light irradiation layer 5 so as to be convex toward the transfer target 1 (see FIG. 1A).

Each piezoelectric element 6 changes the shrinkage rate in the in-plane direction of the light irradiation layer 5 independently in the X direction and the Y direction when the applied voltage changes individually. As a result, at least four regions having different degrees of curvature can be formed in one surface of the light irradiation layer 5.
When the light irradiation layer 5 is bent by contraction of the piezoelectric element 6, the support base material 3 and the fine structure forming layer 4 shown in FIG. 1A are also bent according to the degree of curvature. That is, the piezoelectric element 6 bends the stamper 2 so as to be convex toward the transfer target 1 (see FIG. 1A).

  As shown in FIG. 1A, the fine structure transfer device 15 according to the present embodiment includes a pressurizing mechanism 10 that supports the stamper 2 and pressurizes the stamper 2 against the resin thin film 1 b of the transfer target 1. Yes.

  As a support means of the stamper 2 in the pressurizing mechanism 10, known means may be used. For example, a means for vacuum-sucking the stamper 2 through a vacuum suction port (not shown) provided in the pressurization mechanism 10 or a jig. Mechanical support is mentioned.

  Further, the pressurizing mechanism 10 includes a driving device (not shown) that can move the supported stamper 2 in a three-dimensional direction. This driving device can be constituted by, for example, a stepping motor, a linear motor, a driving unit such as a piezoelectric element, a speed reduction unit, and other power transmission units. This drive device is composed of a coarse adjustment drive device that moves the pressure mechanism 10 at the centimeter level and a fine adjustment drive device that moves the pressure mechanism 10 at the nanometer level or the micrometer level. .

That is, in this drive device, as described above, the coarse adjustment drive device roughly brings the stamper 2 close to the transfer target 1 that has moved along with the stage 9 along the predetermined transport path to the lower side of the stamper 2. After that, the fine adjustment driving device positions the stamper 2 on the transfer target 1.
As shown in FIGS. 1A and 1B, the stamper 2 is positioned with respect to the transfer body 1 by overlapping the alignment hole 13 provided in the stamper 2 with the alignment mark M provided in the transfer substrate 1a. It is done by combining.

Incidentally, as a confirmation method (positioning method) that the alignment hole 13 and the alignment mark M overlap and the stamper 2 is positioned with respect to the transfer target 1, the transparent microstructure forming layer 4 from the alignment hole 13 is used. Further, the amount of reflected light detected when the overlapping of the alignment mark M is confirmed by a picked-up image with an imaging means such as a CCD camera looking at the support substrate 3 and the reflection fiber sensor or the like. What is confirmed based on the change of.
Needless to say, as the alignment method applicable to the present invention, any known method can be adopted regardless of optical alignment, mechanical alignment, or the like.

  Next, a fine structure transfer method using the fine structure transfer device 15 will be described. FIGS. 2A to 2C are process explanatory views when transferring the fine structure of the stamper to the transfer target using the fine structure transfer apparatus according to the embodiment of the present invention.

  As shown in FIG. 2A, in the fine structure transfer method using the fine structure transfer device 15 according to the present embodiment, the stamper 2 is first fixed to the pressurizing mechanism 10 and the stage is moved by a transport mechanism (not shown). The transfer target 1 disposed on the sheet 9 is conveyed below the stamper 2. In addition, the to-be-transferred body 1 is the thing in which the resin thin film 1b was formed by apply | coating a photocurable resin composition on the to-be-transferred substrate 1a with a predetermined resin application | coating mechanism (illustration omitted).

  In this fine structure transfer device 15, a predetermined voltage is applied to the electrode 6a (see FIG. 1B) of the piezoelectric element 6 in accordance with the distortion caused by the deformation of the pattern of the stamper 2, and the distortion. Is corrected.

Next, after the stamper 2 is aligned with the transfer target 1, the stamper 2 comes into contact with the resin thin film 1b of the transfer target 1 by a driving device (not shown) as shown in FIG. The pressurizing mechanism 10 presses the stamper 2 toward the transfer body 1 with a predetermined load.
Then, when light is irradiated from the light source 8 into the light irradiation layer 5 in a state where the stamper 2 is pressed against the transfer target 1, the light becomes scattered light in the light irradiation layer 5, and the light irradiation layer 5. The resin thin film 1b is irradiated evenly and uniformly.

  Then, as shown in FIG. 2C, after the resin thin film 1b is cured, the stamper 2 is lifted by a driving device (not shown) of the pressurizing mechanism 10 to be separated from the resin thin film 1b. As a result, a fine structure (not shown) made of a cured product of the photocurable resin composition is formed on the surface of the transfer target 1.

According to the fine structure transfer device 15 as described above, the following effects can be obtained.
The microstructure transfer device 15 according to the present embodiment bends the stamper 2 so as to be convex toward the transfer target 1 by the piezoelectric element 6 (deformation mechanism). As a result, the fine structure forming layer 4 located closest to the transfer target 1 in the stamper 2 can change the size in the surface direction in which the fine structure is formed along with this curvature. Therefore, according to this microstructure transfer device 15, when a nanometer level distortion occurs in the microstructure of the stamper 2, the distortion is caused by curving the stamper 2 so as to protrude toward the transfer target 1 side. It can be corrected.

  The microstructure transfer device 15 according to the present embodiment includes a light irradiation layer 5 in the stamper 2 that irradiates light toward the resin thin film 1b (photo-curable resin composition) of the transfer target 1, and the stamper. The piezoelectric element 6 as the second deformation mechanism is provided on the back side of the light irradiation layer 5, that is, on the surface opposite to the surface on the fine structure forming layer 4 side in the light irradiation layer 5. Therefore, according to this fine structure transfer device 15, an actuator (deformation mechanism) is arranged around the stamper as in the conventional fine structure transfer device (see, for example, Patent Document 1 and Patent Document 2), or an actuator. Unlike the one in which the stamper has to be substantially expanded in the plane direction so that the light irradiation to the transfer target is not hindered by the (deformation mechanism) (see, for example, Patent Document 3 and Patent Document 4), An increase in the size of the device in the surface direction can be avoided. That is, according to the fine structure transfer device 15, it is possible to achieve downsizing in the surface direction of the stamper 2 while having the piezoelectric element 6 (deformation mechanism) that corrects the distortion of the stamper 2.

  In addition, the microstructure transfer device 15 according to the present embodiment has a resin thin film 1b (light) of the transferred object 1 between the microstructured layer on which the transferred microstructure is formed and the piezoelectric element 6. Since the light irradiation layer 5 for irradiating light to the curable resin) is disposed and the light irradiation layer 5 can scatter light from the light source 8, the resin thin film 1b is uniformly distributed uniformly. Light can be irradiated.

In addition, this embodiment is implemented in various forms, without being limited to the said embodiment.
In the said embodiment, the light irradiation port 8a of the light source 8 is arrange | positioned so that the edge part of the light irradiation layer 5 may be faced, and the main body of the light source 8 is assumed to be arrange | positioned on the outer side of the light irradiation layer 5. However, in the present invention, the position of the light source 8 is not particularly limited as long as light can be introduced into the light irradiation layer 5.

  Next, FIG. 3A to be referred to is a schematic diagram showing a positional relationship between a light irradiation layer and a light source in a microstructure transfer device according to another embodiment of the present invention, and FIG. It is IIIb-IIIb sectional drawing of these. In addition, the white arrow L in Fig.3 (a) and (b) has shown the irradiation direction of light. FIG. 4 is a schematic diagram illustrating an example in which the position of the light source is changed, and corresponds to FIG.

As shown in FIGS. 3A and 3B, the light source 8 is a rod-shaped light source having an elongated outer shape, and a plurality of LEDs (not shown) are arranged along the longitudinal direction thereof. Yes. And this light source 8 is arrange | positioned in the light irradiation layer 5 so that the edge part of the one side of the light irradiation layer 5 which exhibits a square by planar view may be followed, and the light L from this light source 8 is the light irradiation layer 5. Irradiation is performed from one side to the other side opposite to this side.
Further, as shown in FIG. 4, the light source 8 may be a surface light source disposed in the light irradiation layer 5 near the light reflection layer 11.
3A and 3B and FIG. 4, reference numeral 2 is a stamper, reference numeral 6 is a piezoelectric element, reference numeral 11 is a light reflecting layer, and reference numeral 3 is a support substrate. Reference numeral 4 denotes a fine structure forming layer, and reference numeral 13 denotes an alignment hole.

Moreover, although the said embodiment demonstrated what used the piezoelectric element 6 as a deformation | transformation mechanism, the deformation | transformation mechanism in this invention is not limited to the piezoelectric element 6. FIG.
Next, FIG. 5 referred to is a schematic diagram showing an example in which a shrinkable metal layer is provided on the light irradiation layer as a deformation mechanism, and corresponds to FIG.

As shown in FIG. 5, the present invention applies a contractible metal layer 7 formed on the light irradiation layer 5 in place of the piezoelectric element 6 (see FIG. 1B) as the deformation mechanism. Can do. The metal layer 7 is formed on the light irradiation layer 5 so as to be elongated along the four sides thereof, and an intersecting cross metal layer 7 is formed on the inner side of the light irradiation layer 5. The metal layer 7 is cooled by a Peltier element (thermoelectric element) (not shown). That is, the metal layer 7 contracts the light irradiation layer 5 in the surface direction by being cooled by the Peltier element.
As a result, the stamper 2 (see FIG. 1A) is curved so as to protrude toward the transfer target 1 (see FIG. 1A).
In FIG. 5, reference numeral 13 denotes an alignment hole.

  FIG. 6A to be referred to next is an explanatory diagram of the structure of the microstructure transfer apparatus of the present invention having a multi-stamper in which a plurality of stampers are arranged in parallel. FIG. 6B shows the arrangement of the plurality of stampers. FIG.

  As shown in FIGS. 6A and 6B, in the fine structure transfer device 15, a plurality of stampers 2 are arranged in parallel with the pressurizing mechanism 10. Note that the fine structure forming layer 4 of the stamper 2 is disposed so as to face the transfer target 1 (not shown) (see FIG. 1A).

  In this fine structure transfer device 15, as shown in FIG. 6B, a total of 25 stampers 2 are adjacent to each other at equal intervals in the vertical and horizontal directions on the surface of the pressure mechanism 10 having a square planar shape. They are arranged side by side.

  According to the present invention, when applied to such a multi-stamper, as described above, each of the stampers 2 can be downsized in the surface direction, so that the multi-stampers can be compactly gathered.

Moreover, in the said embodiment, as shown to Fig.1 (a), although it assumes that a fine shape is transcribe | transferred only to the single side | surface of the to-be-transferred body 1, it is a photocurable resin composition on both surfaces of the to-be-transferred body 1. It is also possible to form the resin thin film 1b made of a material and sandwich the same with a pair of stampers 2.
In this case, the pair of stampers 2 may be configured to sandwich the transfer target 1 from above or below or from both sides.

  The transfer target 1 to which the fine structure is transferred by the fine structure transfer device 15 as described above (including the transfer substrate 1a (see FIG. 1A) etched using the fine structure as a mask) is magnetic. The present invention can be applied to an information recording medium such as a recording medium or an optical recording medium. The transferred body 1 to which the fine structure is transferred is used for large-scale integrated circuit components, lenses, polarizing plates, wavelength filters, light-emitting elements, optical integrated circuits and other optical components, immunoassays, DNA separation, cell culture, etc. Application to biodevices is possible.

Next, the present invention will be described more specifically with reference to examples.
Example 1
In this embodiment, the fine structure of the stamper 2 is transferred to the resin thin film 1b of the transfer target 1 using the fine structure transfer device 15 shown in FIG.
A glass substrate having a size of 20 mm × 20 mm and a thickness of 0.7 mm was used as the support base 3. A silicon oxide film having a thickness of 20 nm was formed on the surface of the supporting substrate 3 by a sputtering method. Then, by forming a groove pattern with a 100 nm full pitch (50 nm half pitch) and a height of 50 nm on the silicon oxide film by an electron beam drawing method, the microstructure forming layer 4 made of the silicon oxide film was formed.

A silicon substrate having a diameter of 100 mm and a thickness of 0.525 mm was used for the transfer target 1.
Next, the light guide plate as the light irradiation layer 5 was disposed on the back surface of the surface of the support base 3 on which the fine structure forming layer 4 was formed. This light guide plate is composed of a light scattering plate in which fine particles made of a transparent resin having a refractive index different from that of the continuous phase are dispersed in a continuous phase made of a transparent resin.
Moreover, the light reflection layer 11 was formed on the back surface of the light irradiation layer 5 by vapor-depositing silver. Then, four piezoelectric elements (piezoelectric elements 6) were disposed on the light irradiation layer 5.
As the light source 8, an optical fiber for irradiating ultraviolet light having a wavelength of 365 nm was disposed.
The alignment of the stamper 2 with respect to the transfer target 1 was performed by optically confirming the overlap between the alignment hole 13 and the alignment mark M.

  In addition, as resin thin film 1b (photocurable resin composition) of transferred object 1, 1 part by mass of neopentyl glycol diacrylate (manufactured by Shin-Nakamura Chemical), urethane acrylate (UA-53H, manufactured by Shin-Nakamura Chemical Co., Ltd.) 1 What mixed the mass part and DAROCUR1173 (made by Ciba Geigy) 0.1 mass part was used. The photocurable resin composition was applied to the substrate 1a to be transferred by a spin coat method.

  Next, when the distortion of the pattern was observed with an electron microscope for the fine structure of the fine structure forming layer 4, an error 5 nm shorter than the reference length in the master mold was recognized in the extending direction of one side of the square. . Therefore, the distortion is corrected by applying a predetermined voltage to the two piezoelectric elements 6 extending along the direction corresponding to the extending direction of the one side. Then, the resin thin film 1 b was irradiated with ultraviolet rays through the light reflecting layer 11 while pressing the fine structure of the stamper 2 against the resin thin film 1 b (photocurable resin composition) of the transfer target 1. And the distortion of the pattern of the transcription | transfer material obtained by peeling the stamper 2 from the cured resin thin film 1b was observed with an electron microscope. As a result, the pattern error was reduced to ± 500 ppm.

(Example 2)
In this example, two stampers 2 used in Example 1 were arranged at intervals of 50 μm, and the fine structure was transferred onto the transfer target 1 at the same time. In the same manner as in Example 1, the distortion was corrected by the piezoelectric element 6 so as to eliminate the error due to the distortion obtained by observing the stamper 2. Next, the pattern error was determined on the basis of the transfer product obtained by transferring the fine structure with these stampers 2 and found to be ± 500 ppm. Further, the distance between the two transfer marks formed on the transferred material side was 50 μm, which is the same as the distance between the stampers 2.

(Example 3)
In this embodiment, as shown in FIGS. 3A and 3B, a fine structure transfer device 15 similar to that in Embodiment 1 is used except that the stamper 2 provided with a light source 8 (built-in a plurality of LEDs) is used. The fine structure of the stamper 2 was transferred to the resin thin film 1b of the transfer target 1 (see FIGS. 1A and 1B). In the same manner as in Example 1, the distortion was corrected by the piezoelectric element 6 so as to eliminate the error due to the distortion obtained by observing the stamper 2. Next, when the pattern error was determined based on the transfer product obtained by transferring the fine structure with these stampers 2, it was reduced to ± 600 ppm.

(Example 4)
In this embodiment, as shown in FIG. 4, the fine structure transfer device 15 similar to that in Embodiment 1 is used except that the stamper 2 provided with a light source 8 (built-in plural LEDs) is used. The structure was transferred to the resin thin film 1b of the transfer target 1 (see FIGS. 1A and 1B). In the same manner as in Example 1, the distortion was corrected by the piezoelectric element 6 so as to eliminate the error due to the distortion obtained by observing the stamper 2. Next, when the pattern error was determined based on the transfer product obtained by transferring the fine structure with these stampers 2, it was reduced to ± 500 ppm.

(Example 5)
In this embodiment, in addition to the four piezoelectric elements 6 shown in FIG. 1B, the distortion of the stamper 2 is corrected by the two piezoelectric elements 6 arranged so as to cross the light irradiation layer 5 inside. Except for the above, as in Example 1, when the pattern error was determined based on the transfer product with the fine structure transferred, it was reduced to ± 500 ppm.

(Example 6)
In this embodiment, the metal layer 7 arranged as shown in FIG. 5 is cooled by a Peltier element (not shown) so that the metal layer 7 is contracted and the distortion of the stamper 2 is corrected. Similarly to the above, when the pattern error was determined based on the transfer product having the fine structure transferred, the pattern error with respect to the master mold was ± 2 nm.

(Comparative Example 1)
In this comparative example, except that the piezoelectric element 6 is not provided, the fine structure of the stamper 2 is transferred to the resin thin film of the transfer target 1 using the same fine structure transfer device 15 as that of the first embodiment shown in FIG. Transferred to 1b. That is, the fine structure was transferred to the resin thin film 1 b of the transfer target 1 without correcting the distortion of the stamper 2. Next, the pattern error with respect to the master mold was determined based on the transfer product obtained by transferring the fine structure with these stampers 2 and found to be ± 5 nm.

(Comparative Example 2)
In this comparative example, the light irradiation layer 5 shown in FIG. 1A is not provided, and light is applied to the resin thin film 1b with a light source (not shown) arranged on the back side of the support base 3. As a result, the piezoelectric element 6 shown in FIG. 1B blocks the light directed toward the resin thin film 1b. To avoid this, the stamper 2 spreads 3 cm outward in the surface direction. Further, since the mechanism (not shown) for holding the stamper 2 is also provided on the outer peripheral portion of the stamper 2, the apparatus is increased in size. In this comparative example, when the two stampers 2 were arranged side by side, the distance between the patterns transferred to the transfer target 1 was 3 cm or more.

DESCRIPTION OF SYMBOLS 1 Transfer object 2 Stamper 3 Support base material 4 Fine structure formation layer 5 Light irradiation layer 6 Piezoelectric element (deformation mechanism)
7 Metal layer (deformation mechanism)
8 Light source 9 Stage 10 Pressure mechanism 11 Light reflection layer 15 Microstructure transfer device

Claims (7)

In a fine structure transfer device that transfers a fine structure to a photocurable resin composition on a transfer object using a stamper having a fine structure,
The stamper includes a microstructure forming layer in which the microstructure is formed;
A light irradiation layer provided along the microstructure forming layer on the opposite side of the microstructure forming surface in the microstructure forming layer;
A deformation mechanism that is disposed on a surface opposite to the surface on the fine structure forming layer side of the light irradiation layer, and that bends the stamper so as to protrude toward the transfer target;
A fine structure transfer apparatus comprising: The fine structure transfer apparatus according to claim 1,
The fine structure transfer apparatus, wherein the deformation mechanism causes the light irradiation layer to bend by self-contraction to bend the stamper so as to be convex toward the transfer target. In the fine structure transfer apparatus according to claim 1 or 2,
A fine structure transfer apparatus comprising a pressurizing mechanism for pressing the stamper by moving the stamper toward the transfer target. In the microstructure transfer device according to any one of claims 1 to 3,
The fine structure transfer apparatus, wherein the deformation mechanism is a piezoelectric element. In the microstructure transfer device according to any one of claims 1 to 3,
The deformation mechanism includes a metal layer formed along the light irradiation layer,
A thermoelectric element that cools and contracts the metal layer;
A fine structure transfer apparatus comprising: In the fine structure transfer apparatus according to any one of claims 1 to 5,
A fine structure transfer device having a light source in the light irradiation layer, the light irradiation layer scattering light irradiated from the light source. The fine structure transfer apparatus according to any one of claims 1 to 6,
A fine structure transfer apparatus, wherein a plurality of the stampers are arranged in parallel so as to face the transfer object.

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