JP5519489B2 - Method for producing inorganic hollow powder and resin composition used therefor - Google Patents
Method for producing inorganic hollow powder and resin composition used therefor Download PDFInfo
- Publication number
- JP5519489B2 JP5519489B2 JP2010501935A JP2010501935A JP5519489B2 JP 5519489 B2 JP5519489 B2 JP 5519489B2 JP 2010501935 A JP2010501935 A JP 2010501935A JP 2010501935 A JP2010501935 A JP 2010501935A JP 5519489 B2 JP5519489 B2 JP 5519489B2
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- Japan
- Prior art keywords
- hollow
- powder
- inorganic
- raw material
- flame
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000000843 powder Substances 0.000 title claims description 110
- 238000004519 manufacturing process Methods 0.000 title claims description 18
- 239000011342 resin composition Substances 0.000 title claims description 15
- 239000002245 particle Substances 0.000 claims description 92
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 46
- 239000002994 raw material Substances 0.000 claims description 41
- 239000011148 porous material Substances 0.000 claims description 13
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 7
- 238000004438 BET method Methods 0.000 claims description 3
- 229920005989 resin Polymers 0.000 description 31
- 239000011347 resin Substances 0.000 description 31
- 239000003822 epoxy resin Substances 0.000 description 19
- 239000007789 gas Substances 0.000 description 19
- 229920000647 polyepoxide Polymers 0.000 description 19
- 238000000034 method Methods 0.000 description 18
- 238000009826 distribution Methods 0.000 description 15
- 239000000463 material Substances 0.000 description 13
- 239000011521 glass Substances 0.000 description 12
- 239000002966 varnish Substances 0.000 description 12
- 239000000377 silicon dioxide Substances 0.000 description 10
- 229920001971 elastomer Polymers 0.000 description 8
- 238000002156 mixing Methods 0.000 description 8
- 239000005060 rubber Substances 0.000 description 8
- 230000000694 effects Effects 0.000 description 7
- 235000012239 silicon dioxide Nutrition 0.000 description 7
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 6
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 6
- 239000003795 chemical substances by application Substances 0.000 description 6
- 239000001301 oxygen Substances 0.000 description 6
- 229910052760 oxygen Inorganic materials 0.000 description 6
- 239000012756 surface treatment agent Substances 0.000 description 6
- 239000006087 Silane Coupling Agent Substances 0.000 description 5
- 229910002026 crystalline silica Inorganic materials 0.000 description 5
- 230000005484 gravity Effects 0.000 description 5
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 5
- -1 polybutylene terephthalate Polymers 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 description 4
- 239000007822 coupling agent Substances 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 238000000465 moulding Methods 0.000 description 4
- QWVGKYWNOKOFNN-UHFFFAOYSA-N o-cresol Chemical compound CC1=CC=CC=C1O QWVGKYWNOKOFNN-UHFFFAOYSA-N 0.000 description 4
- 230000000704 physical effect Effects 0.000 description 4
- 229920001721 polyimide Polymers 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 150000004756 silanes Chemical class 0.000 description 4
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 3
- 239000004593 Epoxy Substances 0.000 description 3
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 3
- 239000002253 acid Substances 0.000 description 3
- QXJJQWWVWRCVQT-UHFFFAOYSA-K calcium;sodium;phosphate Chemical compound [Na+].[Ca+2].[O-]P([O-])([O-])=O QXJJQWWVWRCVQT-UHFFFAOYSA-K 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 230000001276 controlling effect Effects 0.000 description 3
- 239000000428 dust Substances 0.000 description 3
- 239000004088 foaming agent Substances 0.000 description 3
- 230000002209 hydrophobic effect Effects 0.000 description 3
- 239000010410 layer Substances 0.000 description 3
- 229920000728 polyester Polymers 0.000 description 3
- 229920001296 polysiloxane Polymers 0.000 description 3
- 239000003566 sealing material Substances 0.000 description 3
- 239000013049 sediment Substances 0.000 description 3
- 238000005204 segregation Methods 0.000 description 3
- BPSIOYPQMFLKFR-UHFFFAOYSA-N trimethoxy-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CO[Si](OC)(OC)CCCOCC1CO1 BPSIOYPQMFLKFR-UHFFFAOYSA-N 0.000 description 3
- 239000001993 wax Substances 0.000 description 3
- WYTZZXDRDKSJID-UHFFFAOYSA-N (3-aminopropyl)triethoxysilane Chemical compound CCO[Si](OCC)(OCC)CCCN WYTZZXDRDKSJID-UHFFFAOYSA-N 0.000 description 2
- RNFJDJUURJAICM-UHFFFAOYSA-N 2,2,4,4,6,6-hexaphenoxy-1,3,5-triaza-2$l^{5},4$l^{5},6$l^{5}-triphosphacyclohexa-1,3,5-triene Chemical compound N=1P(OC=2C=CC=CC=2)(OC=2C=CC=CC=2)=NP(OC=2C=CC=CC=2)(OC=2C=CC=CC=2)=NP=1(OC=1C=CC=CC=1)OC1=CC=CC=C1 RNFJDJUURJAICM-UHFFFAOYSA-N 0.000 description 2
- JWAZRIHNYRIHIV-UHFFFAOYSA-N 2-naphthol Chemical compound C1=CC=CC2=CC(O)=CC=C21 JWAZRIHNYRIHIV-UHFFFAOYSA-N 0.000 description 2
- VPWNQTHUCYMVMZ-UHFFFAOYSA-N 4,4'-sulfonyldiphenol Chemical compound C1=CC(O)=CC=C1S(=O)(=O)C1=CC=C(O)C=C1 VPWNQTHUCYMVMZ-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 2
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N Iron oxide Chemical compound [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 description 2
- URLKBWYHVLBVBO-UHFFFAOYSA-N Para-Xylene Chemical group CC1=CC=C(C)C=C1 URLKBWYHVLBVBO-UHFFFAOYSA-N 0.000 description 2
- 239000004952 Polyamide Substances 0.000 description 2
- 239000004962 Polyamide-imide Substances 0.000 description 2
- 239000005062 Polybutadiene Substances 0.000 description 2
- 239000004697 Polyetherimide Substances 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 229920000800 acrylic rubber Polymers 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000003254 anti-foaming effect Effects 0.000 description 2
- PXKLMJQFEQBVLD-UHFFFAOYSA-N bisphenol F Chemical compound C1=CC(O)=CC=C1CC1=CC=C(O)C=C1 PXKLMJQFEQBVLD-UHFFFAOYSA-N 0.000 description 2
- 229920005549 butyl rubber Polymers 0.000 description 2
- 238000002485 combustion reaction Methods 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 238000002149 energy-dispersive X-ray emission spectroscopy Methods 0.000 description 2
- 150000002148 esters Chemical class 0.000 description 2
- FWDBOZPQNFPOLF-UHFFFAOYSA-N ethenyl(triethoxy)silane Chemical compound CCO[Si](OCC)(OCC)C=C FWDBOZPQNFPOLF-UHFFFAOYSA-N 0.000 description 2
- 239000000945 filler Substances 0.000 description 2
- 239000003063 flame retardant Substances 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000004898 kneading Methods 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- BFXIKLCIZHOAAZ-UHFFFAOYSA-N methyltrimethoxysilane Chemical compound CO[Si](C)(OC)OC BFXIKLCIZHOAAZ-UHFFFAOYSA-N 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- KBJFYLLAMSZSOG-UHFFFAOYSA-N n-(3-trimethoxysilylpropyl)aniline Chemical compound CO[Si](OC)(OC)CCCNC1=CC=CC=C1 KBJFYLLAMSZSOG-UHFFFAOYSA-N 0.000 description 2
- 229920003986 novolac Polymers 0.000 description 2
- 239000004843 novolac epoxy resin Substances 0.000 description 2
- SLYCYWCVSGPDFR-UHFFFAOYSA-N octadecyltrimethoxysilane Chemical compound CCCCCCCCCCCCCCCCCC[Si](OC)(OC)OC SLYCYWCVSGPDFR-UHFFFAOYSA-N 0.000 description 2
- 239000003960 organic solvent Substances 0.000 description 2
- 239000003973 paint Substances 0.000 description 2
- VLTRZXGMWDSKGL-UHFFFAOYSA-N perchloric acid Chemical compound OCl(=O)(=O)=O VLTRZXGMWDSKGL-UHFFFAOYSA-N 0.000 description 2
- 239000005011 phenolic resin Substances 0.000 description 2
- XNGIFLGASWRNHJ-UHFFFAOYSA-N phthalic acid Chemical compound OC(=O)C1=CC=CC=C1C(O)=O XNGIFLGASWRNHJ-UHFFFAOYSA-N 0.000 description 2
- 229920000058 polyacrylate Polymers 0.000 description 2
- 229920002647 polyamide Polymers 0.000 description 2
- 229920002312 polyamide-imide Polymers 0.000 description 2
- 229920002857 polybutadiene Polymers 0.000 description 2
- 229920001601 polyetherimide Polymers 0.000 description 2
- 239000009719 polyimide resin Substances 0.000 description 2
- WQGWDDDVZFFDIG-UHFFFAOYSA-N pyrogallol Chemical compound OC1=CC=CC(O)=C1O WQGWDDDVZFFDIG-UHFFFAOYSA-N 0.000 description 2
- GHMLBKRAJCXXBS-UHFFFAOYSA-N resorcinol Chemical compound OC1=CC=CC(O)=C1 GHMLBKRAJCXXBS-UHFFFAOYSA-N 0.000 description 2
- 238000000790 scattering method Methods 0.000 description 2
- 229920002050 silicone resin Polymers 0.000 description 2
- 238000003756 stirring Methods 0.000 description 2
- 229920003048 styrene butadiene rubber Polymers 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- TXDNPSYEJHXKMK-UHFFFAOYSA-N sulfanylsilane Chemical compound S[SiH3] TXDNPSYEJHXKMK-UHFFFAOYSA-N 0.000 description 2
- ZNOCGWVLWPVKAO-UHFFFAOYSA-N trimethoxy(phenyl)silane Chemical compound CO[Si](OC)(OC)C1=CC=CC=C1 ZNOCGWVLWPVKAO-UHFFFAOYSA-N 0.000 description 2
- DQZNLOXENNXVAD-UHFFFAOYSA-N trimethoxy-[2-(7-oxabicyclo[4.1.0]heptan-4-yl)ethyl]silane Chemical compound C1C(CC[Si](OC)(OC)OC)CCC2OC21 DQZNLOXENNXVAD-UHFFFAOYSA-N 0.000 description 2
- RIOQSEWOXXDEQQ-UHFFFAOYSA-N triphenylphosphine Chemical compound C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 RIOQSEWOXXDEQQ-UHFFFAOYSA-N 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 239000013585 weight reducing agent Substances 0.000 description 2
- JYEUMXHLPRZUAT-UHFFFAOYSA-N 1,2,3-triazine Chemical compound C1=CN=NN=C1 JYEUMXHLPRZUAT-UHFFFAOYSA-N 0.000 description 1
- WZCQRUWWHSTZEM-UHFFFAOYSA-N 1,3-phenylenediamine Chemical compound NC1=CC=CC(N)=C1 WZCQRUWWHSTZEM-UHFFFAOYSA-N 0.000 description 1
- XQUPVDVFXZDTLT-UHFFFAOYSA-N 1-[4-[[4-(2,5-dioxopyrrol-1-yl)phenyl]methyl]phenyl]pyrrole-2,5-dione Chemical compound O=C1C=CC(=O)N1C(C=C1)=CC=C1CC1=CC=C(N2C(C=CC2=O)=O)C=C1 XQUPVDVFXZDTLT-UHFFFAOYSA-N 0.000 description 1
- ISPYQTSUDJAMAB-UHFFFAOYSA-N 2-chlorophenol Chemical compound OC1=CC=CC=C1Cl ISPYQTSUDJAMAB-UHFFFAOYSA-N 0.000 description 1
- CRBJBYGJVIBWIY-UHFFFAOYSA-N 2-isopropylphenol Chemical compound CC(C)C1=CC=CC=C1O CRBJBYGJVIBWIY-UHFFFAOYSA-N 0.000 description 1
- LXBGSDVWAMZHDD-UHFFFAOYSA-N 2-methyl-1h-imidazole Chemical compound CC1=NC=CN1 LXBGSDVWAMZHDD-UHFFFAOYSA-N 0.000 description 1
- QTWJRLJHJPIABL-UHFFFAOYSA-N 2-methylphenol;3-methylphenol;4-methylphenol Chemical compound CC1=CC=C(O)C=C1.CC1=CC=CC(O)=C1.CC1=CC=CC=C1O QTWJRLJHJPIABL-UHFFFAOYSA-N 0.000 description 1
- WJQOZHYUIDYNHM-UHFFFAOYSA-N 2-tert-Butylphenol Chemical compound CC(C)(C)C1=CC=CC=C1O WJQOZHYUIDYNHM-UHFFFAOYSA-N 0.000 description 1
- AGRXYXSETZASEV-UHFFFAOYSA-N 3-(triethoxysilylamino)propylurea Chemical class N(C(=O)N)CCCN[Si](OCC)(OCC)OCC AGRXYXSETZASEV-UHFFFAOYSA-N 0.000 description 1
- LVNLBBGBASVLLI-UHFFFAOYSA-N 3-triethoxysilylpropylurea Chemical compound CCO[Si](OCC)(OCC)CCCNC(N)=O LVNLBBGBASVLLI-UHFFFAOYSA-N 0.000 description 1
- ULKLGIFJWFIQFF-UHFFFAOYSA-N 5K8XI641G3 Chemical compound CCC1=NC=C(C)N1 ULKLGIFJWFIQFF-UHFFFAOYSA-N 0.000 description 1
- NLHHRLWOUZZQLW-UHFFFAOYSA-N Acrylonitrile Chemical compound C=CC#N NLHHRLWOUZZQLW-UHFFFAOYSA-N 0.000 description 1
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 1
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- MQJKPEGWNLWLTK-UHFFFAOYSA-N Dapsone Chemical compound C1=CC(N)=CC=C1S(=O)(=O)C1=CC=C(N)C=C1 MQJKPEGWNLWLTK-UHFFFAOYSA-N 0.000 description 1
- OTMSDBZUPAUEDD-UHFFFAOYSA-N Ethane Chemical compound CC OTMSDBZUPAUEDD-UHFFFAOYSA-N 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 1
- 244000043261 Hevea brasiliensis Species 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229920000106 Liquid crystal polymer Polymers 0.000 description 1
- 239000004977 Liquid-crystal polymers (LCPs) Substances 0.000 description 1
- PEEHTFAAVSWFBL-UHFFFAOYSA-N Maleimide Chemical compound O=C1NC(=O)C=C1 PEEHTFAAVSWFBL-UHFFFAOYSA-N 0.000 description 1
- 229920000877 Melamine resin Polymers 0.000 description 1
- 239000004640 Melamine resin Substances 0.000 description 1
- IGFHQQFPSIBGKE-UHFFFAOYSA-N Nonylphenol Natural products CCCCCCCCCC1=CC=C(O)C=C1 IGFHQQFPSIBGKE-UHFFFAOYSA-N 0.000 description 1
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 1
- 229930040373 Paraformaldehyde Natural products 0.000 description 1
- JPYHHZQJCSQRJY-UHFFFAOYSA-N Phloroglucinol Natural products CCC=CCC=CCC=CCC=CCCCCC(=O)C1=C(O)C=C(O)C=C1O JPYHHZQJCSQRJY-UHFFFAOYSA-N 0.000 description 1
- LGRFSURHDFAFJT-UHFFFAOYSA-N Phthalic anhydride Natural products C1=CC=C2C(=O)OC(=O)C2=C1 LGRFSURHDFAFJT-UHFFFAOYSA-N 0.000 description 1
- 239000004695 Polyether sulfone Substances 0.000 description 1
- 239000004721 Polyphenylene oxide Substances 0.000 description 1
- 239000004734 Polyphenylene sulfide Substances 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 239000002174 Styrene-butadiene Substances 0.000 description 1
- 229930006000 Sucrose Natural products 0.000 description 1
- CZMRCDWAGMRECN-UGDNZRGBSA-N Sucrose Chemical compound O[C@H]1[C@H](O)[C@@H](CO)O[C@@]1(CO)O[C@@H]1[C@H](O)[C@@H](O)[C@H](O)[C@@H](CO)O1 CZMRCDWAGMRECN-UGDNZRGBSA-N 0.000 description 1
- 229920001807 Urea-formaldehyde Polymers 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 229920000122 acrylonitrile butadiene styrene Polymers 0.000 description 1
- 125000002723 alicyclic group Chemical group 0.000 description 1
- 239000004844 aliphatic epoxy resin Substances 0.000 description 1
- 125000003545 alkoxy group Chemical group 0.000 description 1
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 1
- 150000001408 amides Chemical class 0.000 description 1
- 229920013822 aminosilicone Polymers 0.000 description 1
- 239000002518 antifoaming agent Substances 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 239000004760 aramid Substances 0.000 description 1
- 150000004982 aromatic amines Chemical class 0.000 description 1
- 229920003235 aromatic polyamide Polymers 0.000 description 1
- 125000003118 aryl group Chemical group 0.000 description 1
- 239000011324 bead Substances 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 1
- 229910052794 bromium Inorganic materials 0.000 description 1
- 239000004566 building material Substances 0.000 description 1
- 239000001273 butane Substances 0.000 description 1
- JHIWVOJDXOSYLW-UHFFFAOYSA-N butyl 2,2-difluorocyclopropane-1-carboxylate Chemical compound CCCCOC(=O)C1CC1(F)F JHIWVOJDXOSYLW-UHFFFAOYSA-N 0.000 description 1
- 239000006229 carbon black Substances 0.000 description 1
- 239000013522 chelant Substances 0.000 description 1
- 239000003638 chemical reducing agent Substances 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 229920001940 conductive polymer Polymers 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- 239000011889 copper foil Substances 0.000 description 1
- 229930003836 cresol Natural products 0.000 description 1
- QGBSISYHAICWAH-UHFFFAOYSA-N dicyandiamide Chemical compound NC(N)=NC#N QGBSISYHAICWAH-UHFFFAOYSA-N 0.000 description 1
- 229920003244 diene elastomer Polymers 0.000 description 1
- 235000014113 dietary fatty acids Nutrition 0.000 description 1
- GYZLOYUZLJXAJU-UHFFFAOYSA-N diglycidyl ether Chemical class C1OC1COCC1CO1 GYZLOYUZLJXAJU-UHFFFAOYSA-N 0.000 description 1
- 239000000539 dimer Substances 0.000 description 1
- XXBDWLFCJWSEKW-UHFFFAOYSA-N dimethylbenzylamine Chemical compound CN(C)CC1=CC=CC=C1 XXBDWLFCJWSEKW-UHFFFAOYSA-N 0.000 description 1
- ZZTCPWRAHWXWCH-UHFFFAOYSA-N diphenylmethanediamine Chemical compound C=1C=CC=CC=1C(N)(N)C1=CC=CC=C1 ZZTCPWRAHWXWCH-UHFFFAOYSA-N 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 239000002612 dispersion medium Substances 0.000 description 1
- 239000008393 encapsulating agent Substances 0.000 description 1
- 125000003700 epoxy group Chemical group 0.000 description 1
- HQQADJVZYDDRJT-UHFFFAOYSA-N ethene;prop-1-ene Chemical group C=C.CC=C HQQADJVZYDDRJT-UHFFFAOYSA-N 0.000 description 1
- NKSJNEHGWDZZQF-UHFFFAOYSA-N ethenyl(trimethoxy)silane Chemical compound CO[Si](OC)(OC)C=C NKSJNEHGWDZZQF-UHFFFAOYSA-N 0.000 description 1
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 239000000194 fatty acid Substances 0.000 description 1
- 229930195729 fatty acid Natural products 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 125000002485 formyl group Chemical class [H]C(*)=O 0.000 description 1
- 239000007849 furan resin Substances 0.000 description 1
- 238000007496 glass forming Methods 0.000 description 1
- 239000008187 granular material Substances 0.000 description 1
- 150000002366 halogen compounds Chemical class 0.000 description 1
- 125000000623 heterocyclic group Chemical group 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910052809 inorganic oxide Inorganic materials 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000004850 liquid epoxy resins (LERs) Substances 0.000 description 1
- FPYJFEHAWHCUMM-UHFFFAOYSA-N maleic anhydride Chemical compound O=C1OC(=O)C=C1 FPYJFEHAWHCUMM-UHFFFAOYSA-N 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- WSFSSNUMVMOOMR-NJFSPNSNSA-N methanone Chemical compound O=[14CH2] WSFSSNUMVMOOMR-NJFSPNSNSA-N 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- IJDNQMDRQITEOD-UHFFFAOYSA-N n-butane Chemical compound CCCC IJDNQMDRQITEOD-UHFFFAOYSA-N 0.000 description 1
- OFBQJSOFQDEBGM-UHFFFAOYSA-N n-pentane Natural products CCCCC OFBQJSOFQDEBGM-UHFFFAOYSA-N 0.000 description 1
- 125000001624 naphthyl group Chemical group 0.000 description 1
- 229920003052 natural elastomer Polymers 0.000 description 1
- 229920001194 natural rubber Polymers 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000004745 nonwoven fabric Substances 0.000 description 1
- SNQQPOLDUKLAAF-UHFFFAOYSA-N nonylphenol Chemical compound CCCCCCCCCC1=CC=CC=C1O SNQQPOLDUKLAAF-UHFFFAOYSA-N 0.000 description 1
- 150000007530 organic bases Chemical class 0.000 description 1
- 229920002866 paraformaldehyde Polymers 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 150000002989 phenols Chemical class 0.000 description 1
- QCDYQQDYXPDABM-UHFFFAOYSA-N phloroglucinol Chemical compound OC1=CC(O)=CC(O)=C1 QCDYQQDYXPDABM-UHFFFAOYSA-N 0.000 description 1
- 229960001553 phloroglucinol Drugs 0.000 description 1
- 150000003018 phosphorus compounds Chemical class 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 229920003192 poly(bis maleimide) Polymers 0.000 description 1
- 229920002492 poly(sulfone) Polymers 0.000 description 1
- 229920001707 polybutylene terephthalate Polymers 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920006393 polyether sulfone Polymers 0.000 description 1
- 229920000139 polyethylene terephthalate Polymers 0.000 description 1
- 239000005020 polyethylene terephthalate Substances 0.000 description 1
- 229920001195 polyisoprene Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229920001955 polyphenylene ether Polymers 0.000 description 1
- 229920006380 polyphenylene oxide Polymers 0.000 description 1
- 229920000069 polyphenylene sulfide Polymers 0.000 description 1
- 150000007519 polyprotic acids Polymers 0.000 description 1
- 229920001021 polysulfide Polymers 0.000 description 1
- 239000005077 polysulfide Substances 0.000 description 1
- 150000008117 polysulfides Polymers 0.000 description 1
- 239000001294 propane Substances 0.000 description 1
- QQONPFPTGQHPMA-UHFFFAOYSA-N propylene Natural products CC=C QQONPFPTGQHPMA-UHFFFAOYSA-N 0.000 description 1
- 125000004805 propylene group Chemical group [H]C([H])([H])C([H])([*:1])C([H])([H])[*:2] 0.000 description 1
- 229940079877 pyrogallol Drugs 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 239000012261 resinous substance Substances 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 238000001878 scanning electron micrograph Methods 0.000 description 1
- 238000004062 sedimentation Methods 0.000 description 1
- FZHAPNGMFPVSLP-UHFFFAOYSA-N silanamine Chemical class [SiH3]N FZHAPNGMFPVSLP-UHFFFAOYSA-N 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 239000000741 silica gel Substances 0.000 description 1
- 229910002027 silica gel Inorganic materials 0.000 description 1
- 229920002379 silicone rubber Polymers 0.000 description 1
- 239000004945 silicone rubber Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 229920006132 styrene block copolymer Polymers 0.000 description 1
- 239000005720 sucrose Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 230000000930 thermomechanical effect Effects 0.000 description 1
- 229920005992 thermoplastic resin Polymers 0.000 description 1
- ZSDSQXJSNMTJDA-UHFFFAOYSA-N trifluralin Chemical compound CCCN(CCC)C1=C([N+]([O-])=O)C=C(C(F)(F)F)C=C1[N+]([O-])=O ZSDSQXJSNMTJDA-UHFFFAOYSA-N 0.000 description 1
- 229920006305 unsaturated polyester Polymers 0.000 description 1
- 238000009849 vacuum degassing Methods 0.000 description 1
- UKRDPEFKFJNXQM-UHFFFAOYSA-N vinylsilane Chemical class [SiH3]C=C UKRDPEFKFJNXQM-UHFFFAOYSA-N 0.000 description 1
- 239000002759 woven fabric Substances 0.000 description 1
- 238000004846 x-ray emission Methods 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
- 150000003739 xylenols Chemical class 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/113—Silicon oxides; Hydrates thereof
- C01B33/12—Silica; Hydrates thereof, e.g. lepidoic silicic acid
- C01B33/18—Preparation of finely divided silica neither in sol nor in gel form; After-treatment thereof
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Compositions Of Macromolecular Compounds (AREA)
- Silicon Compounds (AREA)
- Oxygen, Ozone, And Oxides In General (AREA)
Description
本発明は、無機質中空粉体の製造方法及びそれを用いた樹脂組成物に関する。 The present invention relates to a method for producing an inorganic hollow powder and a resin composition using the same.
無機質中空粉体の典型として微小中空ガラス球状体がある。一般に該微小中空ガラス球状体は、ガラスマイクロバルーンと呼ばれ、非中空無機質粉体と比較して比重が軽く、耐熱性、断熱性、耐衝撃性、耐圧性などの特徴を活かし、各種素材に添加することにより、軽量化、断熱性能、寸法安定性の付与のために使用されている。例えば軽量化目的のため、携帯電子機器や自動車などのモールディングコンパウンド等の樹脂成形部品、移動体用塗料、部材、各種建築材料などに用いられている。 As a typical inorganic hollow powder, there is a fine hollow glass sphere. In general, these micro hollow glass spheres are called glass micro balloons and have a lighter specific gravity than non-hollow inorganic powders, making use of various characteristics such as heat resistance, heat insulation, impact resistance, and pressure resistance. By adding, it is used for weight reduction, heat insulation performance and dimensional stability. For example, for the purpose of weight reduction, it is used for resin molded parts such as molding compounds for portable electronic devices and automobiles, paint for moving bodies, members, various building materials, and the like.
一方で、高度情報化社会の時代を迎え、衛星放送や携帯電話などの通信機器は、デジタル化、信号の高速処理化の傾向にあり、これら通信機器に用いられる電線被覆材や基板、或いはそれらの周辺の樹脂部材には、低誘電率化、低誘電正接化が望まれている。
ところで、前記の微小中空ガラス球状体は、中空粒子という形態に起因した低誘電率化効果を有することから多層プリント基板や電線被覆材、半導体封止材などの低誘電率の材料ニーズがある分野での利用が期待される。On the other hand, with the advent of an advanced information society, communication devices such as satellite broadcasting and mobile phones tend to be digitized and high-speed signal processing. Wire covering materials and substrates used in these communication devices, or those In the peripheral resin members, lower dielectric constant and lower dielectric loss tangent are desired.
By the way, the above-mentioned micro hollow glass spherical body has a low dielectric constant effect due to the form of hollow particles, and therefore there is a need for a material having a low dielectric constant such as a multilayer printed board, a wire coating material, and a semiconductor sealing material. Use in is expected.
このように、微小中空ガラス球状体は広範な用途を有するが、近年、更なる中空ガラス球状粉末の微細化や、高純度な無機質酸化物中空粉体の出現等が強く要求されてきている。 Thus, although the hollow glass spherical body has a wide range of uses, in recent years, further refinement of the hollow glass spherical powder, the appearance of high-purity inorganic oxide hollow powder, and the like have been strongly demanded.
また、低誘電率、低誘電正接が要求される高周波用配線基板では、回路パターンの伝送路上にインピーダンスの不連続点が存在すると、その場所で信号の反射による波形の乱れ、誤作動、動作効率の低下などが生じる。このため、配線基板の回路パターンを設計する上で、特性インピーダンスを整合することが重要になる。この特性インピーダンスは、例えばストリップラインの場合、ライン幅、絶縁層の誘電率と厚みなどにより決定される。 Also, in high-frequency wiring boards that require low dielectric constant and low dielectric loss tangent, if there is an impedance discontinuity on the circuit pattern transmission line, waveform disturbance due to signal reflection at that location, malfunction, and operational efficiency Decrease. For this reason, it is important to match the characteristic impedance when designing the circuit pattern of the wiring board. For example, in the case of a strip line, this characteristic impedance is determined by the line width, the dielectric constant and thickness of the insulating layer, and the like.
微小中空ガラス球状体の製造方法としては、シリカゲルにガラス形成成分および発泡剤成分を担持させた微粉末を炉内で焼成して、微小中空ガラス球状体を得る方法である(特許文献1参照)。この方法により得られた微小中空ガラス球状体の物性としては、粒子密度が0.3g/cm3程度であり、また平均粒子径は70μm程度であることが示されている。しかしながら、このような製法で得られる微小中空ガラス球状体においては、軽量化効果や断熱効果等を付与するに十分な中空度は得られるものの、製造方法としては発泡剤成分が必須であり、また発泡剤成分が残存してしまうなど、純度が高まらない。また、平均粒子径としては70μm前後であり、低誘電率化用途などを含めた複合材料の厚さを規制される用途に対しては使用できない。As a method for producing a fine hollow glass sphere, a fine powder having a glass forming component and a foaming agent component supported on silica gel is fired in a furnace to obtain a fine hollow glass sphere (see Patent Document 1). . As physical properties of the micro hollow glass sphere obtained by this method, it is shown that the particle density is about 0.3 g / cm 3 and the average particle size is about 70 μm. However, in the micro hollow glass spheres obtained by such a production method, a hollowness sufficient to impart a lightening effect, a heat insulating effect, etc. can be obtained, but a foaming agent component is essential as a production method, Purity does not increase, such as foaming agent components remaining. Further, the average particle diameter is around 70 μm, and it cannot be used for applications in which the thickness of the composite material is regulated including applications for reducing the dielectric constant.
更なる微小無機質中空粉体の製造方法としては、比表面積の高いシリカ微粉末を炉内で焼成して、微小無機質中空粉体を得る方法である(特許文献2、及び特許文献3参照)。この方法により得られた微小無機質中空粉体の物性としては、平均中空率20〜85体積%程度であることが示されているが、中空粒子の中空率の分布は記載されておらず、配線基板に使用した際、中空率の高い粒子が偏析した積層板と中空率の低い粒子が偏析した積層板とでは絶縁層の誘電率に差が生じてしまう可能性があり、電気特性としての特性インピーダンスが不明確であった。
本発明の目的は、従来の中空ガラス球状体よりも更に微細化された無機質中空粉体、特に微細化と共に高純度化・中空率の偏析の少ない非晶質シリカからなる無機質中空粉体の製造方法及び樹脂組成物を提供することである。 The object of the present invention is to produce inorganic hollow powders that are further refined than conventional hollow glass spheres, especially inorganic hollow powders that are made of amorphous silica that is refined and has high purity and low segregation of hollow ratio. to provide a mETHODS and resin composition.
すなわち、本発明は以下の要旨を有するものである。 That is, the present invention has the following gist.
(1)細孔容積が0.1〜1.0ml/g、及び最大粒子径が10μm以下の非晶質シリカ原料粉体を粉体濃度50〜500g/Nm 3 で、0.1〜2.0mmのスリット幅を有するドーナツ状構造の原料供給管より供給して、火炎で中空化することにより、中空率が60〜80体積%の中空粒子を70〜90質量%、及び中空率が0〜20体積%の中空粒子を5質量%以下それぞれ含有し、かつ、含有する中空粒子の最大粒子径が25μm以下、BET法により求めた比表面積が30m2/g以下、平均球形度が0.85以上であり、SiO 2 含有量が99.0質量%以上の非晶質シリカからなる無機質中空粉体の製造方法。
(2)前記火炎が、1700〜2200℃の高温火炎と1000〜1400℃の低温火炎である前記(1)に記載の非晶質シリカ中空粉体の製造方法。
(3)細孔容積が0.1〜1.0ml/g、及び最大粒子径が10μm以下の非晶質シリカ原料粉体を粉体濃度50〜500g/Nm3で、0.1〜2.0mmのスリット幅を有するドーナツ状構造の原料供給管より供給して、1700〜2200℃の高温火炎と1000〜1400℃の低温火炎で中空化し、SiO 2 含有量が99.0質量%以上の非晶質シリカからなる無機質中空粉体の製造方法。
(4)前記(1)〜(3)のいずれか一項に記載の製造方法により得られる非晶質シリカからなる無機質中空粉体を含有することを特徴とする樹脂組成物。
(1) An amorphous silica raw material powder having a pore volume of 0.1 to 1.0 ml / g and a maximum particle size of 10 μm or less at a powder concentration of 50 to 500 g / Nm 3 and 0.1 to 2. By supplying from a raw material supply pipe having a donut-like structure having a slit width of 0 mm and hollowing with a flame, the hollow particles having a hollow ratio of 60 to 80% by volume are 70 to 90% by mass, and the hollow ratio is 0 to 0%. 20% by volume of hollow particles are each contained in an amount of 5% by mass or less, the maximum particle diameter of the contained hollow particles is 25 μm or less, the specific surface area determined by the BET method is 30 m 2 / g or less, and the average sphericity is 0.85. The method for producing an inorganic hollow powder comprising amorphous silica having a SiO 2 content of 99.0% by mass or more .
(2) The method for producing an amorphous silica hollow powder according to (1) , wherein the flame is a high temperature flame of 1700 to 2200 ° C. and a low temperature flame of 1000 to 1400 ° C.
(3) Amorphous silica raw material powder having a pore volume of 0.1 to 1.0 ml / g and a maximum particle size of 10 μm or less at a powder concentration of 50 to 500 g / Nm 3 and 0.1 to 2. It is supplied from a raw material supply pipe having a donut-like structure having a slit width of 0 mm, and is hollowed by a high temperature flame of 1700 to 2200 ° C. and a low temperature flame of 1000 to 1400 ° C., and the SiO 2 content is 99.0% by mass or more. A method for producing an inorganic hollow powder comprising amorphous silica .
(4) A resin composition comprising an inorganic hollow powder made of amorphous silica obtained by the production method according to any one of (1) to (3) .
本発明によれば、従来の中空ガラス球状体よりも更に微細化された非晶質シリカからなる無機質中空粉体(以下、無機質中空紛体ともいう。)特に微細化と共に高純度化・中空率の偏析の少ない無機質中空粉体を製造することができ、得られた無機質中空体は電子部品、電線被覆材、半導体封止材、ワニスなどの製造に有用である。 According to the present invention, an inorganic hollow powder made of amorphous silica further refined than a conventional hollow glass sphere (hereinafter also referred to as an inorganic hollow powder), in particular, refinement and high purity and hollow ratio. An inorganic hollow powder with little segregation can be produced , and the obtained inorganic hollow body is useful for producing electronic parts, electric wire coating materials, semiconductor encapsulating materials, varnishes and the like.
本発明により製造される非晶質シリカからなる無機質中空粉体(以下、無機質中空紛体ともいう。)は、粒子の中空率が60〜80体積%の中空粒子の粉末を60〜100質量%含有し、粒子の中空率が0〜20体積%の中空粒子の粉末を5質量%以下(0質量%を含む)含有するものである。中空率が80体積%を超えると粒子の殻厚が薄くなり粒子強度が弱くなり、粉体のハンドリング中やゴム又は樹脂との混練中に粒子が破壊する恐れがある。
また、インピーダンス特性において、粒子の中空率が60〜80体積%の中空粒子が60質量%未満であると、中空率ごとの中空粒子の偏析が起こった際、均一な樹脂成形体を製造することが難しくなる。粒子の中空率が0〜20体積%の中空粒子が5質量%を超えると、中空粒子の特徴である低誘電特性の効果を十分に発現しない。
本発明の無機質中空粉体は、粒子の中空率が60〜80体積%の中空粒子の粉末を70〜90質量%含有するのが好ましく、粒子の中空率が0〜20体積%の中空粒子の粉末を3質量%以下(0質量%を含む)含有するのが好ましい。
The inorganic hollow powder made of amorphous silica produced by the present invention (hereinafter also referred to as inorganic hollow powder) contains 60-100% by mass of hollow particle powder having a particle hollowness of 60-80% by volume. In addition, 5% by mass or less (including 0% by mass) of hollow particle powder having a particle hollow ratio of 0 to 20% by volume is contained. If the hollowness exceeds 80% by volume, the shell thickness of the particles becomes thin and the particle strength becomes weak, and the particles may be broken during handling of the powder or kneading with rubber or resin.
In addition, in the impedance characteristic, when the hollow particle having a particle hollow ratio of 60 to 80% by volume is less than 60% by mass, a uniform resin molded body is produced when segregation of the hollow particle for each hollow ratio occurs. Becomes difficult. When the hollow particle having a particle hollow ratio of 0 to 20% by volume exceeds 5% by mass, the effect of the low dielectric property which is a characteristic of the hollow particle is not sufficiently exhibited.
The inorganic hollow powder of the present invention preferably contains 70 to 90% by mass of a hollow particle powder having a particle hollow ratio of 60 to 80% by volume, and is a hollow particle having a particle hollow ratio of 0 to 20% by volume. It is preferable to contain 3% by mass or less (including 0% by mass) of the powder.
本発明の無機質中空粉体中の中空粒子は粒子の表層に殻を持ち、粒子内部が中空の構造になっているものである。基本的に単孔であり、多孔質の中空粒子とは、構造の異なるものである。多孔質の中空粒子では、本発明の中空粒子の特徴である低誘電特性の効果を十分に発現しない。 The hollow particles in the inorganic hollow powder of the present invention have shells in the surface layer of the particles, and the inside of the particles has a hollow structure. Basically, it is single-pored and has a different structure from porous hollow particles. Porous hollow particles do not sufficiently exhibit the effect of low dielectric properties, which is a feature of the hollow particles of the present invention.
中空率は粒子中の独立気泡含有率と定義することができ、粒子の理論密度に対する粒子密度の実測値との比から算出することができる。
たとえば、シリカ中空粒子の密度の測定値(B)に対して、その非晶質シリカの理論密度(A)である場合、中空率(C)はC=(A−B)/A×100、から求めることができる。密度は、例えばセイシン企業社製ピクノメーター法自動粉粒体真比重測定器(商品名「オートトゥルーデンサーMAT−7000」)を用いて測定することができる。The hollow ratio can be defined as the content of closed cells in the particle, and can be calculated from the ratio of the measured value of the particle density to the theoretical density of the particle.
For example, when the measured density (B) of the hollow silica particles is the theoretical density (A) of the amorphous silica, the hollow ratio (C) is C = (A−B) / A × 100, Can be obtained from The density can be measured using, for example, a pycnometer automatic powder particle true specific gravity measuring instrument (trade name “Auto True Densor MAT-7000”) manufactured by Seishin Enterprise Co., Ltd.
中空粒子の中空の度合いは走査型電子顕微鏡による粒子と膜厚との関係からも測定することができる。
たとえば、粒子径8μm、中空率70体積%の球状シリカ中空粒子の場合は、独立気泡に相当する部分が70体積%であるから、その気泡部分の体積は187.56μm3、半径は3.55μmとなる。したがって、独立気泡を含んでいる殻の厚さは、中空粒子の半径と独立気泡の半径との差から、0.45μmと算出される。
このような粒子と殻厚との関係は、本発明の無機質中空粉体を樹脂と混合・硬化して得られた樹脂成形物を切断・研磨し、研磨面に表出した無機質中空粒子の切断面を走査型電子顕微鏡にて撮影し、任意の500個の粒子について、殻厚を測定することによって求めることができる。The degree of hollowness of the hollow particles can also be measured from the relationship between the particles and the film thickness by a scanning electron microscope.
For example, in the case of spherical silica hollow particles having a particle diameter of 8 μm and a hollow ratio of 70% by volume, the portion corresponding to closed cells is 70% by volume, and thus the volume of the bubble part is 187.56 μm 3 and the radius is 3.55 μm. It becomes. Therefore, the thickness of the shell containing closed cells is calculated as 0.45 μm from the difference between the radius of the hollow particles and the radius of the closed cells.
The relationship between such particles and shell thickness is that the resin hollow product obtained by mixing and curing the inorganic hollow powder of the present invention with resin is cut and polished, and the inorganic hollow particles exposed on the polished surface are cut. The surface can be imaged with a scanning electron microscope, and can be determined by measuring the shell thickness of any 500 particles.
中空率分布の測定は、液比重1.3のショ糖水溶液に無機質中空粉体を攪拌分散・沈降分級し、浮遊物と沈降物を分集・洗浄・乾燥・計量し、40体積%以上と未満の分布を算出する。次に沈降物の断面を走査型電子顕微鏡で観察し、粒子径と膜厚から中空率を求め、20体積%以下の質量頻度を算出する。浮遊物は更に液比重0.9のアルコール水溶液に攪拌分散・沈降分級し、浮遊物と沈降物を分集・洗浄・乾燥・計量し、60体積%以上と未満の分布を算出する。更に、浮遊物の断面を走査型電子顕微鏡で観察し、粒子径と膜厚から中空率を求め、80体積%以下の質量頻度を算出する。 Hollow ratio distribution is measured by stirring and dispersing / sedimentation of inorganic hollow powder in an aqueous sucrose solution with a specific gravity of 1.3. The suspended matter and sediment are collected, washed, dried and weighed, and less than 40% by volume. The distribution of is calculated. Next, the cross section of the sediment is observed with a scanning electron microscope, the hollow ratio is obtained from the particle diameter and film thickness, and the mass frequency of 20% by volume or less is calculated. The suspended matter is further stirred and dispersed and settled in an alcohol aqueous solution having a liquid specific gravity of 0.9, and the suspended matter and sediment are collected, washed, dried and weighed to calculate a distribution of 60% by volume or more and less. Furthermore, the cross section of the suspended matter is observed with a scanning electron microscope, the hollow ratio is obtained from the particle diameter and film thickness, and the mass frequency of 80% by volume or less is calculated.
本発明の無機質中空粉体の最大粒子径は25μm以下、好ましくは20μm以下である。最大粒子径が25μmを超えると、たとえば樹脂成形体とした場合には、表面の平滑性が損なわれ、外観の悪化や凹凸部を起点とした劣化の原因となる。また、最大粒子径が25μmを超えると、多層基板用層間絶縁材料やレジスト材料用フィラーとして使用した場合には、所定の層厚中に収まりきれなくなり、導通部の短絡や断線等様々な不具合を招く恐れがある。最大粒子径は、たとえばベックマン・コールター社製レーザー回折散乱法粒度分布測定装置(商品名「LS−230」)を用いて測定することができる。平均粒子径においては特に制約はないが、最大粒子径の1/5倍程度が好ましい。 The maximum particle size of the inorganic hollow powder of the present invention is 25 μm or less, preferably 20 μm or less. When the maximum particle size exceeds 25 μm, for example, when a resin molded body is used, the smoothness of the surface is impaired, which causes deterioration of the appearance and deterioration starting from the uneven portion. When the maximum particle diameter exceeds 25 μm, when used as an interlayer insulating material for a multilayer substrate or a filler for a resist material, it cannot be accommodated in a predetermined layer thickness, and various problems such as short-circuiting and disconnection of a conductive part are caused. There is a risk of inviting. The maximum particle diameter can be measured, for example, using a laser diffraction scattering method particle size distribution measuring apparatus (trade name “LS-230”) manufactured by Beckman Coulter. The average particle size is not particularly limited, but is preferably about 1/5 times the maximum particle size.
本発明の無機質中空粉体の比表面積は30m2/g以下、好ましくは20m2/g以下である。比表面積が30m2/g以上を超えると、たとえばワニス形成した際に増粘してしまい、高充填することが困難になる等、成形性が低下する恐れがある。また、比表面積の増大に伴い、吸水性も増大してしまい、樹脂成形した際に耐湿信頼性が低下する恐れがある。The specific surface area of the inorganic hollow powder of the present invention is 30 m 2 / g or less, preferably 20 m 2 / g or less. When the specific surface area exceeds 30 m 2 / g or more, for example, when the varnish is formed, the viscosity increases, and it may be difficult to perform high filling, and the moldability may be deteriorated. In addition, as the specific surface area increases, the water absorption also increases, and the moisture resistance reliability may decrease when resin molding is performed.
本発明の無機質中空粉体の平均球形度は0.85以上である。平均球形度が0.85未満では、樹脂との混合性及び樹脂組成物の流動性が問題となる。特に好ましくは平均球形度は0.90以上である。
平均球形度は、走査型電子顕微鏡写真から粒子の投影面積(A)と周囲長(PM)を測定し、周囲長(PM)に対する真円の面積を(B)とすると、その粒子の球形度はA/Bとして表される。そこで、試料粒子の周囲長(PM)と同一の周囲長を持つ真円を想定すると、PM=2πr、B=πr2であるから、B=π×(PM/2π)2となり、この粒子の球形度は、球形度=A/B=A×4π/(PM)2として算出される。100個の粒子について球形度を測定し、その平均値でもって平均球形度とする。The average sphericity of the inorganic hollow powder of the present invention is 0.85 or more. If the average sphericity is less than 0.85, the mixing with the resin and the fluidity of the resin composition are problematic. Particularly preferably, the average sphericity is 0.90 or more.
The average sphericity is measured by measuring the projected area (A) and perimeter (PM) of a particle from a scanning electron micrograph, and assuming that the area of a perfect circle with respect to the perimeter (PM) is (B), the sphericity of the particle Is represented as A / B. Therefore, assuming a perfect circle having the same circumference as that of the sample particle (PM), PM = 2πr and B = πr 2 , so that B = π × (PM / 2π) 2 . The sphericity is calculated as sphericity = A / B = A × 4π / (PM) 2 . The sphericity is measured for 100 particles, and the average value is taken as the average sphericity.
無機質中空粉体の材質としては、シリカを構成成分とする複合酸化物を挙げることができるが、なかでも、非晶質シリカは強度、低熱膨張性、低誘電特性に優れるので好ましい。非晶質シリカの純度は、二酸化ケイ素(SiO2)の含有量が99.0質量%以上であることが好ましい。成分数が2以上の複合酸化物である場合は、複合酸化物を構成している成分は不純物とはしない。
Examples of the material of the inorganic hollow powder include composite oxides containing silica as a constituent component . Among these, amorphous silica is preferable because it is excellent in strength, low thermal expansion, and low dielectric properties. The purity of the amorphous silica is preferably such that the content of silicon dioxide (SiO 2 ) is 99.0% by mass or more. In the case of a complex oxide having two or more components, the component constituting the complex oxide is not an impurity.
SiO2含有量は、例えばエネルギー分散型蛍光X線分析装置(EDX)、原子吸光光度計(AAS)、プラズマ発光分光分析装置(ICP)、蛍光X線分析装置(XRF)等によって測定する。本発明では、無機質中空粉体をフッ化水素と過塩素酸の混合溶液(20:1の体積比)で加熱溶解し、純水で希釈してから、原子吸光光度計(例えば、島津製作所社製)を用いて測定する。The SiO 2 content is measured by, for example, an energy dispersive X-ray fluorescence analyzer (EDX), an atomic absorption photometer (AAS), a plasma emission spectrometer (ICP), a fluorescent X-ray analyzer (XRF), or the like. In the present invention, the inorganic hollow powder is heated and dissolved in a mixed solution of hydrogen fluoride and perchloric acid (20: 1 volume ratio), diluted with pure water, and then an atomic absorption photometer (for example, Shimadzu Corporation). ).
本発明の無機質中空粉体が非晶質シリカの場合、非晶質率は、100〜99.0%であることが好ましい。非晶質シリカの非晶質率は、粉末X線回折装置(例えばRIGAKU社製(「モデルMini Flex」)を用い、CuKα線の2θが26°〜27.5°の範囲においてX線回折分析を行い、特定回折ピークの強度比から測定する。たとえば、シリカの場合、結晶質シリカは26.7°に主ピークがあるが、非晶質シリカではピークはない。非晶質シリカと結晶質シリカが混在する場合、結晶質シリカの割合に応じた26.7°のピーク高さが得られる。そこで、結晶質シリカの標準試料のX線強度に対応する試料のX線強度の比から、結晶質シリカの混在比を算出し、式、非晶質率(%)=(1−結晶質シリカ混在比)×100、から非晶質率を求める。 When the inorganic hollow powder of the present invention is amorphous silica, the amorphous ratio is preferably 100 to 99.0%. The amorphous ratio of amorphous silica is determined by X-ray diffraction analysis using a powder X-ray diffractometer (for example, RIGAKU (“Model Mini Flex”)) in the range of 2θ of CuKα ray of 26 ° to 27.5 °. For example, in the case of silica, crystalline silica has a main peak at 26.7 °, but there is no peak in amorphous silica. When silica is mixed, a peak height of 26.7 ° corresponding to the ratio of crystalline silica is obtained, so from the ratio of the X-ray intensity of the sample corresponding to the X-ray intensity of the standard sample of crystalline silica, The mixing ratio of crystalline silica is calculated, and the amorphous ratio is obtained from the formula, amorphous ratio (%) = (1-crystalline silica mixing ratio) × 100.
本発明の無機質中空粉体は、例えばシランカップリング剤等の表面処理剤で処理されていることが好ましい。通常、無機質粉体の表面は親水性であるので、樹脂や有機溶剤などの疎水性分散媒への分散性が良くないので、表面処理剤で処理しておくと分散性が改善される。また、表面処理剤で処理しておくとゴム又は樹脂との密着性、ピール強度等も向上する。表面処理剤の使用量は、無機質中空粉体100質量部に対して0.05〜5質量部であることが好ましく、0.1〜3質量部であることがより好ましい。 The inorganic hollow powder of the present invention is preferably treated with a surface treatment agent such as a silane coupling agent. Usually, since the surface of the inorganic powder is hydrophilic, the dispersibility in a hydrophobic dispersion medium such as a resin or an organic solvent is not good. Therefore, when the surface is treated with a surface treatment agent, the dispersibility is improved. In addition, when treated with a surface treatment agent, adhesion to rubber or resin, peel strength, and the like are also improved. The amount of the surface treatment agent used is preferably 0.05 to 5 parts by mass and more preferably 0.1 to 3 parts by mass with respect to 100 parts by mass of the inorganic hollow powder.
表面処理剤としては、シランカップリング剤、アルミニウム系カップリング剤、チタネートカップリング剤、Zrキレートなどを用いることができる。
シランカップリング剤を例示すれば、例えば、γ−グリシドキシプロピルトリメトキシシラン、β−(3,4−エポキシシクロヘキシル)エチルトリメトキシシラン等のエポキシシラン;アミノプロピルトリエトキシシラン、ウレイドプロピルトリエトキシシラン、N−フェニルアミノプロピルトリメトキシシラン等のアミノシラン;フェニルトリメトキシシラン、メチルトリメトキシシラン、オクタデシルトリメトキシシラン等の疎水性シラン化合物;ビニルトリエトキシシラン、ビニルトリメトキシシラン等のビニルシラン;メルカプトシランなどである。As the surface treatment agent, a silane coupling agent, an aluminum coupling agent, a titanate coupling agent, a Zr chelate, or the like can be used.
Examples of silane coupling agents include epoxy silanes such as γ-glycidoxypropyltrimethoxysilane and β- (3,4-epoxycyclohexyl) ethyltrimethoxysilane; aminopropyltriethoxysilane, ureidopropyltriethoxy Aminosilanes such as silane and N-phenylaminopropyltrimethoxysilane; hydrophobic silane compounds such as phenyltrimethoxysilane, methyltrimethoxysilane and octadecyltrimethoxysilane; vinylsilanes such as vinyltriethoxysilane and vinyltrimethoxysilane; mercaptosilane Etc.
本発明の無機質中空粉体の製造方法は、細孔容積0.1〜1.0ml/gの無機質原料粉体を、バーナーによって形成された高温火炎中と低温火炎中に粉体濃度50〜500g/Nm3で供給して球状化・中空化させた後、捕集する方法である。In the method for producing an inorganic hollow powder of the present invention, an inorganic raw material powder having a pore volume of 0.1 to 1.0 ml / g is mixed with a powder concentration of 50 to 500 g in a high temperature flame and a low temperature flame formed by a burner. This is a method of collecting after spheroidizing and hollowing by supplying at / Nm 3 .
ここで、無機質原料粉体の細孔容積が1.0ml/gを超えると、球状化及び/又は中空化を達成することができず多孔化してしまい、細孔容積が0.1ml/g未満では中空化を達成することができず、中実化してしまう。好ましい細孔容積は0.2〜0.8ml/gである。
無機質原料粉体の最大粒子径は、10μm以下であり、10μmを超えると中空化した際の粒子径が25μmを越えてしまい、本発明の無機質中空粉体を製造することができない。好ましい最大粒子径は1.0〜8.0μmである。Here, when the pore volume of the inorganic raw material powder exceeds 1.0 ml / g, spheroidization and / or hollowing cannot be achieved, resulting in porosity, and the pore volume is less than 0.1 ml / g. Then, hollowing cannot be achieved, and it becomes solid. A preferable pore volume is 0.2 to 0.8 ml / g.
The maximum particle size of the inorganic raw material powder is 10 μm or less. If it exceeds 10 μm, the particle size when hollowed out exceeds 25 μm, and the inorganic hollow powder of the present invention cannot be produced. A preferred maximum particle size is 1.0 to 8.0 μm.
無機質原料粉体を供給する際の粉体濃度が50g/Nm3未満では部分的に過熱状態となり、中空化が不十分で中空粒子が形成されにくい。500g/Nm3以上では分散が不十分で均一に加熱することができず、球状化・中空化が不十分で本発明の無機質中空粉体を製造することができない。無機質原料粉体の供給の粉体濃度は、好ましくは100〜300g/Nm3である。If the powder concentration when supplying the inorganic raw material powder is less than 50 g / Nm 3 , the powder is partially overheated, so that hollowing is insufficient and hollow particles are hardly formed. If it is 500 g / Nm 3 or more, dispersion is insufficient and uniform heating cannot be achieved, and spheroidization and hollowing are insufficient, so that the inorganic hollow powder of the present invention cannot be produced. The powder concentration of the supply of the inorganic raw material powder is preferably 100 to 300 g / Nm 3 .
無機質原料粉体は、バーナーとは別の原料供給管より供給される。無機質原料粉体の担持ガスへの担持方法としては、例えば、テーブルフィーダーから切込まれた無機質原料粉体を担持ガスと共に原料供給管より供給する等の公知の方法で実施すれば良い。無機質原料粉体は、可燃性ガスと支燃性ガスのいずれか一方、あるいは両方に担持させることができる。本発明者らの検討の結果では、いずれか一方のガスに担持する方法においては、支燃性ガスに担持する方法が好ましく、本発明の目的を達成することが容易である。 The inorganic raw material powder is supplied from a raw material supply pipe separate from the burner. As a method for supporting the inorganic raw material powder on the supporting gas, for example, a known method such as supplying the inorganic raw material powder cut from the table feeder together with the supporting gas from the raw material supply pipe may be used. The inorganic raw material powder can be supported on one or both of a combustible gas and a combustion-supporting gas. As a result of the study by the present inventors, the method of supporting on any one of the gases is preferably the method of supporting on a combustion-supporting gas, and the object of the present invention is easily achieved.
本発明の原料供給管は、0.1〜2.0mmのスリット幅を有するドーナツ状構造である。ドーナツ状構造でない場合、供給管の壁面部分と中心部分において、噴出速度の分布が大きくなってしまう。供給管径を小さくすることによっても速度分布を抑制することができるが、圧力損失が大きく無機質原料粉体を噴出することが困難となる。スリット幅が0.1mm未満でも同様に圧力損失が大きく無機質原料粉体を噴出することが困難となる。スリット幅が2.0mmを超えると噴出速度分布が大きくなってしまい、均一に加熱することができず、球状化・中空化が不十分で本発明の無機質中空粉体を製造することができない。原料供給管は、好ましくは0.5〜1.5mmのスリット幅を有するドーナツ状構造である。 The raw material supply pipe of the present invention has a donut-like structure having a slit width of 0.1 to 2.0 mm. If the doughnut-shaped structure is not used, the distribution of the ejection speed becomes large at the wall surface portion and the center portion of the supply pipe. Although the velocity distribution can be suppressed by reducing the supply pipe diameter, the pressure loss is large and it is difficult to eject the inorganic raw material powder. Even if the slit width is less than 0.1 mm, the pressure loss is similarly large, and it is difficult to eject the inorganic raw material powder. When the slit width exceeds 2.0 mm, the jet velocity distribution becomes large, it is impossible to heat uniformly, the spheroidization / hollowing is insufficient, and the inorganic hollow powder of the present invention cannot be produced. The raw material supply pipe preferably has a donut-like structure having a slit width of 0.5 to 1.5 mm.
高温火炎と低温火炎は、各バーナーに可燃性ガス及び支燃性ガスを供給することによって形成される。各バーナーは原料供給管を囲むように内側から順に高温火炎バーナー群、低温火炎バーナー群を原料供給管側に角度を持たせて配置し、各バーナー群の角度を調整制御することによって、無機質原料粉体の火炎中の滞留時間を制御することができる。各バーナー群は2〜8本で構成される。バーナー群が1本では無機質原料粉体のすべてを均一に加熱することができない。バーナー群が9本以上では火炎温度制御が困難になる。好ましくは、各バーナー群は3〜6本である。
可燃性ガスとしては、例えばメタン、エタン、アセチレン、プロパン、ブタン、プロピレン等の炭化水素ガス及び水素ガスからなる群から選ばれた1種又は2種以上の混合ガスが用いられる。支燃性ガスは、酸素を含むガスであればどのような成分組成のガスであっても使用可能である。
火炎温度の調整制御は、可燃性ガス量と支燃性ガス量との比を調整することによって制御することができる。また、支燃性ガス中の酸素濃度を調整制御することによっても可能である。The high temperature flame and the low temperature flame are formed by supplying a combustible gas and a combustion supporting gas to each burner. Each burner is arranged in order from the inside to surround the raw material supply pipe, high temperature flame burner group, low temperature flame burner group with an angle to the raw material supply pipe side, and adjusting the angle of each burner group, the inorganic raw material The residence time of the powder in the flame can be controlled. Each burner group consists of 2-8. One burner group cannot uniformly heat all of the inorganic raw material powders. If the number of burner groups is nine or more, flame temperature control becomes difficult. Preferably, each burner group is 3-6.
As the combustible gas, for example, one or more mixed gases selected from the group consisting of hydrocarbon gases such as methane, ethane, acetylene, propane, butane, and propylene, and hydrogen gas are used. As the combustion-supporting gas, any gas having any component composition can be used as long as it contains oxygen.
The adjustment control of the flame temperature can be controlled by adjusting the ratio of the amount of combustible gas and the amount of combustible gas. It is also possible by adjusting and controlling the oxygen concentration in the combustion-supporting gas.
高温火炎の温度は1700〜2200℃である。1700℃未満では球状化することが困難である。高温火炎の温度は、好ましくは1800〜2000℃である。低温火炎の温度は1000〜1400℃である。1000℃未満では気泡膨張効果が得られず、本発明の無機質中空粉体を製造することができない。1400℃を超えると、無機質原料粉体の軟化温度に近い温度が継続することになり、気泡が脱泡し、中空化させることが困難となる。低温火炎の温度は、1100〜1300℃が好ましい。 The temperature of the high temperature flame is 1700-2200 ° C. If it is less than 1700 ° C., it is difficult to spheroidize. The temperature of the high temperature flame is preferably 1800 to 2000 ° C. The temperature of the low temperature flame is 1000 to 1400 ° C. If it is less than 1000 degreeC, the bubble expansion effect is not acquired and the inorganic hollow powder of this invention cannot be manufactured. If it exceeds 1400 ° C., the temperature close to the softening temperature of the inorganic raw material powder will continue, and bubbles will be degassed and it will be difficult to make them hollow. The temperature of the low temperature flame is preferably 1100 to 1300 ° C.
火炎を形成させる炉は、縦型炉、横型炉などのいずれでも良いが、無機質中空粉体の炉体への付着抑制、火炎の安定性、操業安定性などの点から、上記バーナーを炉頂に配し、下部が捕集系に接続している縦型炉が好ましい。捕集系には集塵機が設置されており、製造された無機質中空粉体は、排気側に設けられたブロワーによって捕集系に吸引輸送捕集され、必要に応じ分級される。集塵機としては、例えばサイクロン、電気集塵機、バッグフィルター等がある。このような縦型炉の製造については、バーナー構造を除き、多くの公知例があるので、それを用いることができる。 The furnace for forming the flame may be either a vertical furnace or a horizontal furnace, but the above burner is placed at the top of the furnace from the viewpoint of suppressing adhesion of inorganic hollow powder to the furnace body, flame stability, operational stability, etc. A vertical furnace with a lower part connected to the collection system is preferred. A dust collector is installed in the collection system, and the produced inorganic hollow powder is sucked, transported and collected in the collection system by a blower provided on the exhaust side, and classified as necessary. Examples of the dust collector include a cyclone, an electric dust collector, and a bag filter. Regarding the manufacture of such a vertical furnace, there are many known examples except for the burner structure, which can be used.
無機質中空粉体の平均球形度は、主に高温火炎の温度制御によって調整制御することができる。
また、無機質中空粉体の最大粒子径、及び比表面積などは、主に無機質原料粉体の最大粒子径や、無機質原料粉体の供給時の粉体濃度によって調整制御することができる。
無機質中空粉体の中空率は、低温火炎の温度制御と無機質原料粉体の供給時の粉体濃度によって調整制御することができる。
具体的には、高温火炎バーナーの可燃性ガスの流量を多くすると、火炎温度が高くなり無機質原料粉体が十分に加熱されるため、平均球形度の高い無機質中空粉体が得られる。また、低温火炎バーナーの火炎温度を高くすると無機質原料粉体の膨張効果が高まり、中空率の大きい無機質中空粉体が得られるが、無機質原料粉体の供給時の粉体濃度が高すぎると加熱状態に分布が生じてしまい、中空率の小さい無機質中空粉体が発生してしまう。The average sphericity of the inorganic hollow powder can be adjusted and controlled mainly by controlling the temperature of the high-temperature flame.
Further, the maximum particle size and specific surface area of the inorganic hollow powder can be adjusted and controlled mainly by the maximum particle size of the inorganic raw material powder and the powder concentration at the time of supplying the inorganic raw material powder.
The hollow ratio of the inorganic hollow powder can be adjusted and controlled by controlling the temperature of the low-temperature flame and the powder concentration at the time of supplying the inorganic raw material powder.
Specifically, when the flow rate of the combustible gas in the high-temperature flame burner is increased, the flame temperature is increased and the inorganic raw material powder is sufficiently heated, so that an inorganic hollow powder having a high average sphericity can be obtained. In addition, when the flame temperature of the low-temperature flame burner is increased, the expansion effect of the inorganic raw material powder is increased, and an inorganic hollow powder having a large hollow ratio is obtained. However, if the powder concentration at the time of supplying the inorganic raw material powder is too high, heating is performed. Distribution occurs in the state, and an inorganic hollow powder having a small hollow ratio is generated.
本発明の樹脂組成物は、本発明の無機質中空粉体をゴム及び/又は樹脂に含有させたものである。無機質中空粉体の含有率は目的に応じて異なり、例示すると1〜97質量%、好ましくは5〜95質量%である。 The resin composition of the present invention is one in which the inorganic hollow powder of the present invention is contained in rubber and / or resin. The content of the inorganic hollow powder varies depending on the purpose. For example, it is 1 to 97% by mass, preferably 5 to 95% by mass.
本発明の樹脂組成物中のゴムを例示すれば、天然ゴム、ポリブタジエンゴム(BR)、スチレン−ブタジエン共重合体ゴム(SBR)、ポリイソプレンゴム(IR)、ブチルゴム(IIR)、ニトリル−ブタジエン共重合体ゴム(NBR)などが挙げられる。 Examples of the rubber in the resin composition of the present invention include natural rubber, polybutadiene rubber (BR), styrene-butadiene copolymer rubber (SBR), polyisoprene rubber (IR), butyl rubber (IIR), and nitrile-butadiene copolymer. Examples thereof include polymer rubber (NBR).
本発明の樹脂組成物中の樹脂としては、エポキシ樹脂、フェノール樹脂、フラン樹脂、不飽和エステル樹脂、キシレン樹脂、シリコーン樹脂、メラミン樹脂、ユリア樹脂、不飽和ポリエステル、フッ素樹脂、BTレジン(ビスマレイミド・トリアジン樹脂)、ポリイミド、ポリアミドイミド、ポリエーテルイミド等のポリアミド、ポリブチレンテレフタレート、ポリエチレンテレフタレート等のポリエステル、ポリフェニレンスルフィド、全芳香族ポリエステル、ポリスルホン、液晶ポリマー、ポリエーテルスルホン、ポリカーボネイト、マレイミド変性樹脂、ABS樹脂、AAS(アクリロニトリル−アクリルゴム・スチレン)樹脂、AES(アクリロニトリル・エチレン・プロピレン・ジエンゴム−スチレン)樹脂などが挙げられる。 Examples of the resin in the resin composition of the present invention include epoxy resin, phenol resin, furan resin, unsaturated ester resin, xylene resin, silicone resin, melamine resin, urea resin, unsaturated polyester, fluororesin, BT resin (bismaleimide).・ Triazine resin), polyamide such as polyimide, polyamideimide, polyetherimide, polyester such as polybutylene terephthalate, polyethylene terephthalate, polyphenylene sulfide, wholly aromatic polyester, polysulfone, liquid crystal polymer, polyethersulfone, polycarbonate, maleimide modified resin, Examples include ABS resin, AAS (acrylonitrile-acrylic rubber / styrene) resin, AES (acrylonitrile / ethylene / propylene / diene rubber / styrene) resin, and the like.
本発明の樹脂組成物中の多層基板用樹脂としては、例えば変性ポリイミド系樹脂などのポリイミド系樹脂;フッ素系樹脂;ポリフェニレンオキサイド、ポリフェニレンエーテル、BTレジンなどの低誘電率樹脂;ポリイミド、ポリエステル、ポリアミド、特に芳香族ポリアミド、ポリアミドイミド、ポリエーテルイミド等の良好な耐熱性と機械強度を有する樹脂;などを使用することができる。 Examples of the resin for multilayer substrates in the resin composition of the present invention include polyimide resins such as modified polyimide resins; fluorine resins; low dielectric constant resins such as polyphenylene oxide, polyphenylene ether, and BT resin; polyimide, polyester, polyamide In particular, resins having good heat resistance and mechanical strength such as aromatic polyamide, polyamideimide, polyetherimide, etc. can be used.
本発明の樹脂組成物中の半導体封止材料用樹脂としては、1分子中にエポキシ基を2個以上有するエポキシ樹脂が好ましい。その具体例を挙げれば、フェノールノボラック型エポキシ樹脂、オルソクレゾールノボラック型エポキシ樹脂、フェノール類とアルデヒド類のノボラック樹脂をエポキシ化したもの、ビスフェノールA 、ビスフェノールF 及びビスフェノールS などのグリシジルエーテル、フタル酸やダイマー酸などの多塩基酸とエポクロルヒドリンとの反応により得られるグリシジルエステル酸エポキシ樹脂、線状脂肪族エポキシ樹脂、脂環式エポキシ樹脂、複素環式エポキシ樹脂、アルキル変性多官能エポキシ樹脂、β−ナフトールノボラック型エオキシ樹脂、1,6−ジヒドロキシナフタレン型エポキシ樹脂、2,7−ジヒドロキシナフタレン型エポキシ樹脂、ビスヒドロキシビフェニル型エポキシ樹脂、更には難燃性を付与するために臭素などのハロゲンを導入したエポキシ樹脂等である。中でも、耐湿性や耐ハンダリフロー性の点からは、オルソクレゾールノボラック型エポキシ樹脂、ビスヒドロキシビフェニル型エポキシ樹脂、ナフタレン骨格のエポキシ樹脂等が好適である。 As the resin for a semiconductor sealing material in the resin composition of the present invention, an epoxy resin having two or more epoxy groups in one molecule is preferable. Specific examples include phenol novolac epoxy resins, orthocresol novolac epoxy resins, epoxidized phenol and aldehyde novolac resins, glycidyl ethers such as bisphenol A, bisphenol F and bisphenol S, phthalic acid, Glycidyl ester acid epoxy resin, linear aliphatic epoxy resin, alicyclic epoxy resin, heterocyclic epoxy resin, alkyl-modified polyfunctional epoxy resin obtained by reaction of polybasic acid such as dimer acid and epochlorohydrin, β-naphthol novolac-type epoxy resin, 1,6-dihydroxynaphthalene-type epoxy resin, 2,7-dihydroxynaphthalene-type epoxy resin, bishydroxybiphenyl-type epoxy resin, and bromine and other halogen compounds to impart flame retardancy. An epoxy resin obtained by introducing a Gen. Among these, from the viewpoint of moisture resistance and solder reflow resistance, orthocresol novolac type epoxy resins, bishydroxybiphenyl type epoxy resins, epoxy resins having a naphthalene skeleton, and the like are preferable.
樹脂としてエポキシ樹脂を使用する場合、硬化剤を用いるが、硬化剤については、エポキシ樹脂と反応して硬化させるものであれば特に限定されない。例えば、フェノール、クレゾール、キシレノール、レゾルシノール、クロロフェノール、t−ブチルフェノール、ノニルフェノール、イソプロピルフェノール、及びオクチルフェノールからなる群から選ばれた1種又は2種以上の混合物をホルムアルデヒド、パラホルムアルデヒド又はパラキシレンとともに酸化触媒下で反応させて得られるノボラック型樹脂;ポリパラヒドロキシスチレン樹脂;ビスフェノールA やビスフェノールS 等のビスフェノール化合物;ピロガロールやフロログルシノール等の3官能フェノール類;無水マレイン酸、無水フタル酸や無水ピロメリット酸等の酸無水物;メタフェニレンジアミン、ジアミノジフェニルメタン、ジアミノジフェニルスルホン等の芳香族アミン;等を挙げることができる。 When an epoxy resin is used as the resin, a curing agent is used, but the curing agent is not particularly limited as long as it is cured by reacting with the epoxy resin. For example, one or a mixture of two or more selected from the group consisting of phenol, cresol, xylenol, resorcinol, chlorophenol, t-butylphenol, nonylphenol, isopropylphenol, and octylphenol together with formaldehyde, paraformaldehyde or paraxylene Novolak-type resin obtained by reaction under the following conditions: polyparahydroxystyrene resin; bisphenol compounds such as bisphenol A and bisphenol S; trifunctional phenols such as pyrogallol and phloroglucinol; maleic anhydride, phthalic anhydride and pyromellitic anhydride Acid anhydrides such as acids; aromatic amines such as metaphenylenediamine, diaminodiphenylmethane, and diaminodiphenylsulfone;
本発明においては、エポキシ樹脂と硬化剤との反応を促進させるために硬化促進剤を配合することができる。硬化促進剤としては、1,8−ジアザビシクロ(5,4 ,0)ウンデセン−7、トリフェニルホスフィン、ベンジルジメチルアミン、2−メチルイミダゾール等が挙げられる。 In the present invention, a curing accelerator can be blended to promote the reaction between the epoxy resin and the curing agent. Examples of the curing accelerator include 1,8-diazabicyclo (5,4,0) undecene-7, triphenylphosphine, benzyldimethylamine, 2-methylimidazole and the like.
本発明の樹脂組成物には、次の成分を必要に応じて配合することができる。
すなわち、低応力化剤としては、シリコーンゴム、ポリサルファイドゴム、アクリル系ゴム、ブタジエン系ゴム、スチレン系ブロックコポリマーや飽和型エラストマー等のゴム状物質、各種熱可塑性樹脂、シリコーン樹脂等の樹脂状物質、エポキシ樹脂、フェノール樹脂の一部又は全部をアミノシリコーン、エポキシシリコーン、アルコキシシリコーンなどで変性した樹脂などが挙げられる。
シランカップリング剤としては、γ−グリシドキシプロピルトリメトキシシラン、β−(3,4−エポキシシクロヘキシル)エチルトリメトキシシラン等のエポキシシラン;アミノプロピルトリエトキシシラン、ウレイドプロピルトリエトキシシラン、N−フェニルアミノプロピルトリメトキシシラン等のアミノシラン;フェニルトリメトキシシラン、メチルトリメトキシシラン、オクタデシルトリメトキシシラン等の疎水性シラン化合物;メルカプトシラン;などが挙げられる。
表面処理剤としては、Zrキレート、チタネートカップリング剤、アルミニウム系カップリング剤などが挙げられる。
難燃助剤としては、Sb2O3、Sb2O4、Sb2O5などが挙げられる。
難燃剤としては、ハロゲン化エポキシ樹脂、リン化合物などが挙げられる。
着色剤としては、カーボンブラック、酸化鉄、染料、顔料などが挙げられる。
更には、ワックス等の離型剤を添加することができる。その具体例を挙げれば、天然ワックス類、合成ワックス類、直鎖脂肪酸塩の金属塩、酸アミド類、エステル類、パラフィンなどである。The resin composition of the present invention may contain the following components as necessary.
That is, as a stress reducing agent, silicone rubber, polysulfide rubber, acrylic rubber, butadiene rubber, rubbery substances such as styrene block copolymers and saturated elastomers, various thermoplastic resins, resinous substances such as silicone resins, Examples thereof include resins obtained by modifying part or all of epoxy resins and phenol resins with amino silicone, epoxy silicone, alkoxy silicone, and the like.
Examples of the silane coupling agent include epoxy silanes such as γ-glycidoxypropyltrimethoxysilane and β- (3,4-epoxycyclohexyl) ethyltrimethoxysilane; aminopropyltriethoxysilane, ureidopropyltriethoxysilane, N- And aminosilanes such as phenylaminopropyltrimethoxysilane; hydrophobic silane compounds such as phenyltrimethoxysilane, methyltrimethoxysilane, and octadecyltrimethoxysilane; mercaptosilane;
Examples of the surface treatment agent include Zr chelates, titanate coupling agents, and aluminum coupling agents.
Examples of the flame retardant aid include Sb 2 O 3 , Sb 2 O 4 , Sb 2 O 5 and the like.
Examples of the flame retardant include halogenated epoxy resins and phosphorus compounds.
Examples of the colorant include carbon black, iron oxide, dye, and pigment.
Furthermore, a release agent such as wax can be added. Specific examples include natural waxes, synthetic waxes, metal salts of linear fatty acid salts, acid amides, esters, paraffins and the like.
耐湿信頼性や高温放置安定性が要求される場合には、各種イオントラップ剤の添加が有効である。イオントラップ剤の具体例としては、協和化学社製(商品名;「DHF−4A」、「KW−2000」、「KW−2100」など)や東亜合成化学工業社製(商品名;「IXE−600」など)の製品が挙げられる。 Addition of various ion trapping agents is effective when moisture resistance reliability and high temperature storage stability are required. Specific examples of the ion trapping agent include Kyowa Chemical Co., Ltd. (trade names; “DHF-4A”, “KW-2000”, “KW-2100”, etc.) and Toa Gosei Chemical Industries Co., Ltd. (trade name; “IXE-”). 600 "etc.).
本発明の樹脂組成物は、例えば上記各材料の所定量をブレンダーやヘンシェルミキサー等によりブレンドした後、加熱ロール、ニーダー、一軸又は二軸押し出し機等により混練したものを冷却後、粉砕することによって製造することができる。
多層プリント基板用途や塗料用途においては、上記各材料と有機溶剤とを混合してワニスとするが、これらの材料の混合には、らいかい機、ビーズミル、3本ロール、攪拌ミキサーなどの混合機が使用される。ワニスとした後は真空脱気によりワニス中の気泡を除去しておくことが好ましい。
消泡機能、破泡機能を持たせるために、例えばシリコーン系、アクリル系、フッ素系等の消泡剤の樹脂組成物中への添加は有効である。The resin composition of the present invention is obtained by, for example, blending a predetermined amount of each of the above materials with a blender, a Henschel mixer or the like, then kneading with a heating roll, kneader, uniaxial or biaxial extruder, etc. Can be manufactured.
In multilayer printed circuit board applications and paint applications, the above materials and organic solvents are mixed to make a varnish, but these materials can be mixed by mixing machines such as a raking machine, bead mill, three rolls, stirring mixer, etc. Is used. After forming the varnish, it is preferable to remove bubbles in the varnish by vacuum degassing.
In order to provide an antifoaming function and an antifoaming function, it is effective to add an antifoaming agent such as silicone, acrylic, or fluorine to the resin composition.
以下、本発明の実施例によりさらに詳細に説明するが、これらに限定して解釈されるものではない。
本発明の無機質中空粉体の製造に用いた装置は、原料供給管に対して20度傾けた高温火炎バーナー3本と、原料供給管に対して10度傾けた低温火炎バーナー3本とを縦型炉の炉頂部に設置し、炉の下部を捕集系(サイクロン、バッグフィルター)に接続したものである。
無機質中空粉体は燃焼排ガスと共にブロワーで吸引輸送し、サイクロン及びバッグフィルターで捕集した。Hereinafter, the present invention will be described in more detail with reference to examples, but the present invention should not be construed as being limited thereto.
The apparatus used for producing the inorganic hollow powder of the present invention is composed of three high-temperature flame burners inclined at 20 degrees with respect to the raw material supply pipe and three low-temperature flame burners inclined at 10 degrees with respect to the raw material supply pipe. It is installed at the top of the mold furnace and the lower part of the furnace is connected to a collection system (cyclone, bag filter).
The inorganic hollow powder was sucked and transported with a combustion exhaust gas by a blower and collected by a cyclone and a bag filter.
実施例1〜10及び比較例1〜8
原料供給管は0.1〜1.5mmスリット幅を有するものを用いた。高温火炎バーナー群は、バーナー一本あたりLPGを1〜4Nm3/Hrと、酸素を3〜15Nm3/Hrとを供給して高温火炎を形成した。また、低温火炎バーナー群は、バーナー一本あたりLPGを0.5〜3Nm3/Hrと、酸素富化空気を1〜10Nm3/Hrとを供給して低温火炎を形成した。
表1に示される無機質原料粉体(シリカ)を50〜500g/Nm3の粉体濃度で原料供給管から供給し、高温火炎、及び低温火炎中に噴霧した。無機質原料粉体の特性と各バーナー群のLPG供給量、支燃ガス(酸素、酸素富化空気)供給量、及び無機質原料粉体の粉体濃度の違いに応じ、特性の異なる種々の無機質中空粉体(球状中空シリカ)がサイクロンから捕集された。
捕集した無機質中空粉体の粒子の中空率が60〜80体積%の中空粒子と粒子の中空率が0〜20体積%の中空粒子の含有量、最大粒子径、比表面積、平均球形度、及び純度を上記に従って測定した。それらの結果を表1に示す。
また、非晶質率を前記の方法により測定した結果、ピークはなく非晶質であることを確認した。
なお、シランカップリング剤で表面処理を施す場合は、無機質中空粉体100質量部に対し0.5質量部のビニルトリエトキシシランを用いた。混合にはヘンシェルミキサーを用い、混合時間を10分とした。
なお、表1及び表2のA中空粒子とは中空率60〜80体積%の中空粒子を、B中空粒子とは中空率0〜20体積%の中空粒子を意味するものである。
各種物性の測定方法は、以下のとおりである。
(1)細孔容積
細孔容積は自動比表面積/ 細孔分布測定装置( マイクロメリティックス社製、TriStar3000) を用いて7 8 K における窒素の吸着等温線を作成し、該吸着等温線から、B J H 法により細孔分布曲線を作成して求めた。
(2)最大粒子径
最大粒子径は、ベックマン・コールター社製レーザー回折散乱法粒度分布測定装置(商品名「LS−230」)を用いて測定した。
(3)二酸化ケイ素(SiO2)の含有量
無機質中空粉体中の二酸化ケイ素の含有量は前記の方法により、測定した。
(4)中空粒子の中空率
中空粒子の中空率は前記の方法により、粒子の理論密度に対する粒子の密度の実測値との比から算出した。粒子の密度は、セイシン企業社製ピクノメーター法自動粉粒体真比重測定器(商品名「オートトゥルーデンサーMAT−7000」)を用いて測定した。
(5)中空粒子の中空率分布
中空粒子の中空率分布は、前記の方法により、測定した。
(6)比表面積
比表面積は自動比表面積/ 細孔分布測定装置( マイクロメリティックス社製、TriStar3000)を用いてBET法による多点法比表面積を測定した。
(7)平均球形度
中空粒子の平均球形度は、前記の方法により、測定した。Examples 1-10 and Comparative Examples 1-8
A raw material supply pipe having a slit width of 0.1 to 1.5 mm was used. Hot flame burner groups, and one per LPG a 1 to 4 nm 3 / Hr burner to form a high-temperature flame of the oxygen supplied to the 3 to 15 nm 3 / Hr. Also, low-temperature flame burner group, and 0.5 to 3 nm 3 / Hr of LPG per one burner, to form a cold flame the oxygen-enriched air supplies and 1~10Nm 3 / Hr.
The inorganic raw material powder (silica) shown in Table 1 was supplied from a raw material supply pipe at a powder concentration of 50 to 500 g / Nm 3 and sprayed into a high temperature flame and a low temperature flame. Depending on the characteristics of the inorganic raw material powder and the LPG supply amount of each burner group, the support gas (oxygen, oxygen-enriched air) supply amount, and the powder concentration of the inorganic raw material powder, various inorganic hollows with different characteristics Powder (spherical hollow silica) was collected from the cyclone.
Content of hollow particles having a hollowness of 60 to 80% by volume and hollow particles having a hollowness of 0 to 20% by volume of particles of the collected inorganic hollow powder, maximum particle diameter, specific surface area, average sphericity, And the purity was measured according to the above. The results are shown in Table 1.
Moreover, as a result of measuring the amorphous ratio by the above method, it was confirmed that there was no peak and it was amorphous.
In addition, when surface-treating with a silane coupling agent, 0.5 mass part vinyltriethoxysilane was used with respect to 100 mass parts of inorganic hollow powder. A Henschel mixer was used for mixing, and the mixing time was 10 minutes.
In Tables 1 and 2, A hollow particles mean hollow particles having a hollow rate of 60 to 80% by volume, and B hollow particles mean hollow particles having a hollow rate of 0 to 20% by volume.
The measuring method of various physical properties is as follows.
(1) Pore volume The pore volume was determined by creating an adsorption isotherm of nitrogen at 7 8 K using an automatic specific surface area / pore distribution measuring device (manufactured by Micromeritics, TriStar 3000). The pore distribution curve was prepared by the BJH method.
(2) Maximum particle diameter The maximum particle diameter was measured using a laser diffraction scattering method particle size distribution measuring apparatus (trade name "LS-230") manufactured by Beckman Coulter.
(3) Content of silicon dioxide (SiO 2 ) The content of silicon dioxide in the inorganic hollow powder was measured by the method described above.
(4) Hollow ratio of hollow particles The hollow ratio of the hollow particles was calculated from the ratio of the measured density of the particles to the theoretical density of the particles by the method described above. The density of the particles was measured by using a pycnometer method automatic granule true specific gravity measuring instrument (trade name “Auto True Denser MAT-7000”) manufactured by Seishin Enterprise Co., Ltd.
(5) Hollow ratio distribution of hollow particles The hollow ratio distribution of the hollow particles was measured by the method described above.
(6) Specific surface area The specific surface area measured the multipoint method specific surface area by BET method using the automatic specific surface area / pore distribution measuring apparatus (The product made by Micromeritics, TriStar3000).
(7) Average sphericity The average sphericity of the hollow particles was measured by the method described above.
得られた無機質中空粉体の特性を評価するため、臭素化ビスフェノールA型液状エポキシ樹脂100質量部、ジシアンジアミド4質量部、及び2−エチル4−メチルイミダゾール0.2質量部をメチルエチルケトン200質量部に溶解した。その後、3−グリシドキシプロピルトリメトキシシラン1質量部、及び無機質中空粉体を上記エポキシ樹脂100体積部に対して100体積部を加え、高速ミキサーで10分間攪拌してワニスを製造した。 In order to evaluate the properties of the obtained inorganic hollow powder, 100 parts by mass of brominated bisphenol A type liquid epoxy resin, 4 parts by mass of dicyandiamide, and 0.2 parts by mass of 2-ethyl 4-methylimidazole were added to 200 parts by mass of methyl ethyl ketone. Dissolved. Thereafter, 1 part by mass of 3-glycidoxypropyltrimethoxysilane and 100 parts by volume of the inorganic hollow powder were added to 100 parts by volume of the epoxy resin, and stirred for 10 minutes with a high-speed mixer to produce a varnish.
ワニスの粘度を測定してから、ワニスをガラスクロスに含浸させ150℃の電気炉で5分間加熱した後、切断してプリプレグを得た。このプリプレグを必要な厚さになるように重ね、圧力(ゲージ圧)5.0MPa、温度180℃で200分の加熱成形プレスをして積層板を製造し、熱膨張係数と難燃性と比誘電率を測定した。その後、特性インピーダンスが50Ωになるようにマイクロストリップラインの配線基板を作製し、特性インピーダンスのバラツキを測定した。それらの結果を表1に示す。
なお、ワニスを積層板に用いる場合には、ワニス粘度が800mPa・s以下、特に700mPa・s以下であることが積層板を成形する点から好ましい。After measuring the viscosity of the varnish, the glass cloth was impregnated with varnish, heated in an electric furnace at 150 ° C. for 5 minutes, and then cut to obtain a prepreg. This prepreg is piled up to the required thickness, and a laminate is manufactured by heating molding press for 200 minutes at a pressure (gauge pressure) of 5.0 MPa and a temperature of 180 ° C., and the coefficient of thermal expansion and flame retardancy are compared. The dielectric constant was measured. Thereafter, a microstrip line wiring board was prepared so that the characteristic impedance was 50Ω, and the variation in the characteristic impedance was measured. The results are shown in Table 1.
In addition, when using a varnish for a laminated board, it is preferable from a point which shape | molds a laminated board that varnish viscosity is 800 mPa * s or less, especially 700 mPa * s or less.
各種物性の測定方法は、以下のとおりである。
(1)ワニス粘度:トキメック社製E型粘度計を用い、3°R14のコーンローター、温度30℃、ローター回転数2.5rpmの条件で測定した。
(2)積層板の熱膨張係数:積層板から、直径5mm×高さ10mmのテストピースを作製し、島津製作所社製熱機械分析装置(TMA)を用い、JIS K7197規格に準じて測定した。
(3)積層板の難燃性:積層板から、12.7mm×127mm×1mmのテストピースを作製し、UL−94規格に準じて測定した。
(4)積層板の比誘電率:積層板から、直径100mm×厚み2mmのテストピースを作製し、ヒューレット・パッカード社製誘電率測定器を用いて、JIS K6911規格に準じて測定した。
(5)特性インピーダンス:特性インピーダンスが50Ωになるように、基板厚さ(h)0.1±0.02mm、導体厚さ(t)0.016±0.002mmとし、(4)で測定した比誘電率(εr)にあわせて導体幅(W)0.223〜0.181±0.015mmのマイクロストリップラインの配線板を作製し、ネットワークアナライザーを用いて測定した。The measuring method of various physical properties is as follows.
(1) Varnish viscosity: Measured using an E-type viscometer manufactured by Tokimec Co., Ltd. under conditions of a cone rotor of 3 ° R14, a temperature of 30 ° C., and a rotor rotational speed of 2.5 rpm.
(2) Thermal expansion coefficient of laminated plate: A test piece having a diameter of 5 mm and a height of 10 mm was prepared from the laminated plate, and measured according to JIS K7197 standard using a thermomechanical analyzer (TMA) manufactured by Shimadzu Corporation.
(3) Flame retardancy of laminate: A test piece of 12.7 mm × 127 mm × 1 mm was prepared from the laminate and measured according to UL-94 standards.
(4) Relative dielectric constant of the laminate: A test piece having a diameter of 100 mm and a thickness of 2 mm was prepared from the laminate, and measured according to the JIS K6911 standard using a dielectric constant measuring device manufactured by Hewlett-Packard Company.
(5) Characteristic impedance: The substrate thickness (h) was 0.1 ± 0.02 mm and the conductor thickness (t) was 0.016 ± 0.002 mm so that the characteristic impedance would be 50Ω, and measured in (4). A microstrip line wiring board having a conductor width (W) of 0.223 to 0.181 ± 0.015 mm in accordance with the relative dielectric constant (εr) was prepared and measured using a network analyzer.
実施例と比較例の対比から明らかなように、本発明の実施例によれば、熱膨張係数が30ppm以下、難燃性がV−0、比誘電率が3.3以下(25℃、1GHz)の積層板を製造することができる。さらに、特定インピーダンスを50Ωに設定した場合の特性インピーダンスのバラツキが5Ω以下である配線板を製造することができる。 As is clear from the comparison between the examples and the comparative examples, according to the examples of the present invention, the thermal expansion coefficient is 30 ppm or less, the flame retardancy is V-0, and the relative dielectric constant is 3.3 or less (25 ° C., 1 GHz). ) Can be produced. Furthermore, it is possible to manufacture a wiring board having a characteristic impedance variation of 5Ω or less when the specific impedance is set to 50Ω.
本発明の無機質中空粉体は、自動車、携帯電子機器、家庭電化製品等のモールディングコンパウンドなどの樹脂成形部品、更にはパテ、シーリング材、軽量外壁材などの充填材として使用される。また、本発明の樹脂組成物は、ガラス織布、ガラス不織布、その他有機基材に含浸して硬化し、例えばプリント基板用プリプレグや、プリプレグの1枚又は複数枚を銅箔等と共に加熱成形された電子部品、更には電線被覆材、半導体封止材、ワニスなどの製造に使用される。
なお、2008年3月5日に出願された日本特許出願2008−054370号の明細書、特許請求の範囲、及び要約書の全内容をここに引用し、本発明の明細書の開示として、取り入れるものである。The inorganic hollow powder of the present invention is used as a filler for resin molded parts such as molding compounds for automobiles, portable electronic devices, home appliances, etc., as well as putty, sealing materials, lightweight outer wall materials and the like. Further, the resin composition of the present invention is impregnated into a glass woven fabric, glass nonwoven fabric, or other organic base material and cured. For example, a prepreg for a printed circuit board or one or a plurality of prepregs is thermoformed together with a copper foil or the like. In addition, it is used for manufacturing electronic parts, electric wire coating materials, semiconductor encapsulants, varnishes and the like.
The entire contents of the specification, claims, and abstract of Japanese Patent Application No. 2008-054370 filed on Mar. 5, 2008 are incorporated herein as the disclosure of the description of the present invention. Is.
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| JP5438407B2 (en) * | 2009-07-14 | 2014-03-12 | 花王株式会社 | Low dielectric resin composition |
| JP2011225756A (en) * | 2010-04-21 | 2011-11-10 | Kao Corp | Low dielectric resin composition |
| CN102471590B (en) | 2009-07-14 | 2015-05-20 | 花王株式会社 | Low-permittivity resin composition |
| US20120301718A1 (en) * | 2010-01-28 | 2012-11-29 | Katsunori Nishiura | Metal-resin composite |
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| JP2006062902A (en) * | 2004-08-26 | 2006-03-09 | Denki Kagaku Kogyo Kk | Spherical inorganic hollow powder, method for producing the same, and resin composition |
| WO2007125891A1 (en) * | 2006-04-24 | 2007-11-08 | Denki Kagaku Kogyo Kabushiki Kaisha | Inorganic hollow particle, process for producing the same, and composition containing the same |
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| JP2006062902A (en) * | 2004-08-26 | 2006-03-09 | Denki Kagaku Kogyo Kk | Spherical inorganic hollow powder, method for producing the same, and resin composition |
| WO2007125891A1 (en) * | 2006-04-24 | 2007-11-08 | Denki Kagaku Kogyo Kabushiki Kaisha | Inorganic hollow particle, process for producing the same, and composition containing the same |
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