JP5520638B2 - Semiconductor light emitting device and manufacturing method thereof - Google Patents

Description

  The present invention relates to a semiconductor light emitting device and a manufacturing method thereof, and more particularly to a junction type semiconductor light emitting device formed using a lift-off method and a manufacturing method thereof.

  A semiconductor light emitting element is generally configured by sandwiching a light emitting structure including an n-type semiconductor layer, a light emitting layer, and a p-type semiconductor layer between a pair of electrodes. For example, a junction type light emitting element is formed by stacking a light emitting structure including an n type semiconductor layer, a light emitting layer, and a p type semiconductor layer on a growth substrate such as sapphire, and then, on the p type semiconductor layer side, a p side electrode layer and By forming a bonding layer, bonding to a support member having a separately formed bonding layer, and then peeling the growth substrate from the light emitting structure, thereby forming an n-side electrode on the exposed n-type semiconductor layer Can be manufactured. Here, the bonding layer is generally formed by thermocompression bonding a first bonding layer previously formed on the light emitting structure side and a second bonding layer previously formed on the support member side. .

  In addition, an insulating protective film is generally provided in a region other than the portion where the electrode is provided in the semiconductor light emitting device for the purpose of preventing a short circuit and improving the yield and reliability of the device.

  Here, the second bonding layer is usually formed in advance on a support member via a plurality of layers such as an adhesion layer and a barrier layer. A technique is disclosed in which, after forming an adhesion layer made of Ti and a barrier layer made of Pt, a bonding layer made of Au is formed thereon.

  As described above, as a bonding method, solid phase diffusion bonding using Au or liquid phase diffusion bonding using solder such as AuSn has been conventionally used. However, in order to form a strong bond by solid phase diffusion bonding, the surface roughness is required to be sufficiently small. Therefore, when the surface roughness of the bonding surface is large, liquid phase diffusion bonding may be used. Many.

  In some cases, the bonding type light emitting device may include a separation step of separating the light emitting structure into individual devices while being supported by the growth substrate before the step of bonding to the support member. After peeling off the growth substrate, the independent light emitting structure supported by the supporting substrate becomes a plurality of semiconductor light emitting elements by dicing and separating the supporting substrate between the light emitting structures. FIGS. 1A and 1B are a plan view and a cross-sectional view, respectively, of one semiconductor light emitting device manufactured by such a method. As indicated by reference symbol A in FIG. In the outer peripheral portion of the bonding portion, there is a region where the first bonding layer is not bonded, that is, a region where the second bonding layer is exposed.

Japanese Patent Laid-Open No. 2006-324685

  In the step of forming an insulating protective film, it has been difficult to form a protective film having sufficient adhesion at a portion where Au, AuSn, or the like, which is the second bonding layer, is exposed. Au can be etched using aqua regia or iodine-based etchants, but it is difficult to selectively etch with other metals in aqua regia, and iodine-based selective etchants are mainly used in the manufacturing process. Will be used. However, for AuSn, an iodine-based etching solution cannot be used, and selective etching is difficult.

  The present invention has been developed in view of the above situation, and improves the durability and manufacturing yield of a semiconductor light emitting device by improving the adhesion of the exposed surface of the second bonding layer to the insulating protective film. Objective.

The present inventors have selected a method using an alloy of Au and Sn in order to obtain a sufficient bonding strength of the junction type light emitting device. This is because bonding at a low temperature is possible depending on the eutectic temperature, and the requirement for the surface roughness of the bonding surface is relaxed by liquid phase diffusion bonding compared to solid phase diffusion bonding, and strong bonding by Sn diffusion can be performed. is there. In this case, Sn composing the second bonding layer is usually diffused in Au by a heat treatment in a bonding process for bonding the first bonding layer and the second bonding layer to form an Au—Sn alloy.
As described above, the exposed surface of the second bonding layer exists on the outer periphery of the bonding portion. In the step of forming the protective layer, because it is difficult to Au and AuSn or the like as the second bonding layer to form a protective film having sufficient adhesion to the portion exposed insulating protective film such as SiO ₂ In order to improve the adhesion to the surface, the inventors have considered removing Au and / or Au—Sn alloy on the surface of the second bonding layer.

Therefore, various further improvements were tried. As a result, by providing a Pt-based alloy layer under the second bonding layer,
(1) Sn of the second bonding layer that does not form a bonding surface passes through alloying with Au, and only Sn is diffused and deposited on the Pt-based alloy layer side, and a single layer of Au is exposed on the surface,
(2) The inventors have found that when the exposed Au layer is removed by etching to expose the Sn layer, or further the Sn layer is also removed to expose the Pt layer, the adhesion to the protective film is improved. .
Conventionally, since the purpose of use of the Au—Sn alloy was only bonding, attention was not paid to the behavior of the Sn layer after bonding.

The present invention is based on the above findings, and the gist of the present invention is as follows.
(1) forming an independent light emitting structure having a p-side electrode layer and a first bonding layer on the p-side electrode layer on a growth substrate; and a Pt-based alloy barrier layer on the entire surface of the support member; A step of sequentially forming a second bonding layer containing Au and Sn, a bonding step of thermally bonding the first bonding layer and the second bonding layer, and peeling off the growth substrate from the light emitting structure by lift-off And a first removing step of removing, by etching, the Au-containing layer of the second bonding layer in the non-bonded region where the first bonding layer is not bonded on the surface of the support member. A method for producing a semiconductor light emitting device.

  (2) The method for manufacturing a semiconductor light emitting element according to (1), further comprising a second removal step of removing the Sn-containing layer exposed by etching of the Au-containing layer by etching after the first removal step.

  (3) The method for manufacturing a semiconductor light-emitting element according to (1) or (2), wherein the thermal bonding is performed at 250 ° C. or higher.

(4) the rear first removal step or said second removal step, before Symbol Au Sn-containing layer is exposed by etching-containing layer or the Sn exposed by etching of the layer containing the Pt-based alloy barrier layer, the light emitting structure body side of, and the on the release surface of said growth substrate has been peeled off light emitting structure in the peeling step, further comprising the step of forming a protective film made of SiO ₂ or TiO ₂ above (1), ( The method for producing a semiconductor light-emitting device according to 2) or (3).

(5) On the surface of the support member, a Pt-based alloy barrier layer, an Sn-containing layer, an Au-containing layer, a metal layer bonded to the Au-containing layer, and a light emitting structure are provided in this order .
Has an exposed area where the metal layer on the surface of the support member is not joined, the exposed areas the surface of an the Pt-based alloy barrier layer or the Sn-containing layer, the Pt-based alloy barrier layer or the A semiconductor light emitting element comprising a protective film made of SiO ₂ or TiO ₂ on the surface of the Sn-containing layer and at least on the side surface of the light emitting structure.

  (6) The semiconductor light-emitting device according to (5), wherein the emission wavelength is 200 to 500 nm.

  According to the present invention, in the semiconductor light emitting device, the Au-containing layer of the second bonding layer in the non-bonding region is removed by etching, and the Sn-containing layer is exposed, whereby the adhesion with the protective film can be improved. Furthermore, by removing the Sn-containing layer by etching and exposing the Pt-based alloy barrier layer, in addition to further improving the adhesion with the protective film, it is possible to improve the light reflectance, and consequently Contributes to improving luminous efficiency and yield.

1A and 1B are a schematic plan view and a cross-sectional view, respectively, of a conventional semiconductor light emitting device. 2A to 2H are diagrams showing a manufacturing flow of a semiconductor light emitting device according to the present invention. FIGS. 3A and 3B respectively show the component structure of the second junction layer after the heat treatment of the semiconductor light emitting device according to the present invention and the component structure of the second junction layer after the heat treatment of the semiconductor light emitting device according to the conventional method. It is a graph. FIG. 4 is a schematic cross-sectional view of a preferred example of a semiconductor light emitting device according to the present invention. FIG. 5 is a component configuration of the second bonding layer after heat treatment of the semiconductor light emitting devices according to Examples 1 and 2 and Comparative Example 1. FIG. 6 shows the component structure of the second bonding layer after the heat treatment of the semiconductor light emitting device according to Comparative Example 2. FIG. 7 shows the component structure of the second bonding layer after the heat treatment of the semiconductor light emitting device according to Comparative Example 3. FIG. 8 shows the component structure of the second bonding layer after the heat treatment of the semiconductor light emitting device according to Comparative Example 4. FIG. 9 is a graph showing a comparison of light reflectance on the exposed surfaces of the semiconductor light emitting devices of Examples 1 and 2 and Comparative Example 1.

An embodiment of a method for manufacturing a semiconductor light emitting device according to the present invention will be described with reference to the drawings.
2A to 2H show a manufacturing flow of the semiconductor light emitting device 100 according to the present invention.
3 (a) and 3 (b) show the component structure on the support member side after the joining step of the semiconductor light emitting device according to the present invention and the support member side after the joining step when no Pt-based alloy barrier layer is provided. Each component structure is shown. 3 (a) and 3 (b) show, for example, a case where a Mo substrate is used as the support member, a Pt-based alloy barrier layer and a second bonding layer on the surface of the support member (via a Cr adhesion layer), or Only the second bonding layer is formed.

  First, as shown in FIG. 2A, a light emitting structure 102, a p-side electrode layer 102a, and a first bonding layer 103 are sequentially formed on a growth substrate 101, and a plurality of independent light emitting structures 102 are formed by etching or the like. And On the other hand, as shown in FIG. 2B, a Pt-based alloy barrier layer 105 and a second bonding layer containing Au and Sn (in FIG. 2, Au-containing layer 106a, Sn-containing) are formed on the entire surface of the support member 104. Layer 107 and Au-containing layer 106b) 108 are formed in sequence. In the present embodiment, the Au-containing layer and the Sn-containing layer are laminated separately, but may be formed as an Au-Sn alloy layer.

  Next, as shown in FIG. 2C, the first bonding layer 103 and the second bonding layer 108 are thermally bonded. For example, when there is no Pt-based alloy barrier layer on the support member side on the exposed surface that is not bonded by heating at 350 ° C. during thermal bonding, Sn and Au are alloyed as shown in FIG. It can be seen that an Au-Sn alloy layer is formed. On the other hand, as shown in FIG. 3A, when the Pt-based alloy barrier layer 105 is provided on the support member side according to the present invention, only Sn diffuses to the Pt-based alloy layer 105 side and is simply It can be seen that a single Sn-containing layer 107 ′ is formed, and a single Au-containing layer 106 ′ is exposed on the surface.

  2C, the first bonding layer 103 and the second bonding layer 108 are brought into contact with each other, and are 250 ° C. or higher, more preferably 250 to 400 ° C., more preferably 250 in a vacuum atmosphere. It can be performed by thermocompression bonding at ˜300 ° C. When the temperature is lower than 250 ° C., the movement of Sn accompanying the bonding is not sufficient, and the Au—Sn alloy remains. Further, when the temperature is higher than 400 ° C., Sn diffuses to the inside of the Pt-based alloy barrier layer, and it becomes difficult to etch Sn. A temperature of 250 ° C. or higher and a lower temperature (300 ° C. or lower) is more preferable because it is easy to control the time necessary and sufficient for bonding and Sn movement.

  Subsequently, as shown in FIG. 2D, the growth substrate 101 is peeled off from the light emitting structure 102 by lift-off. In this case, although not shown in the figure, a lift-off layer is provided between the growth substrate 101 and the light emitting structure 102, and the growth substrate 101 is peeled off by removing the lift-off layer by a chemical lift-off method, or the growth substrate A method in which the growth substrate 101 is peeled off by a laser lift-off method in which 101 and the light emitting structure 102 are separated by a laser can be used.

  Next, as shown in FIG. 2E, the Au-containing layer 106 ′ of the second bonding layer 108 ′ in the non-bonded region where the first bonding layer 103 is not bonded is removed by etching on the surface of the support member 104. To do. In order to completely remove the Au-containing layer 106 ', it is preferable to use an Au etching solution that is a mixed solution of iodine and potassium iodide for this etching.

  In addition, among the light generated in the light emitting layer, the light directed to the non-bonded region where the first bonding layer 103 is not bonded is reflected or absorbed by the exposed surface. In order to improve, it is desired that the reflectance on the exposed surface of the non-bonded region is large. Therefore, after the first removal step shown in FIG. 2 (e), as shown in FIG. 2 (f), it is preferable to remove the Sn-containing layer 107 ′ exposed by etching the Au-containing layer 106 ′ by etching. . This is because the exposed Pt-based alloy barrier layer 105 has a reflectance higher than that of the Sn-containing layer 107 ′ and has better adhesion with a protective film formed thereafter. Therefore, by adopting such a configuration, it is possible to further improve the reflectance of light and the adhesion to the protective film.

Further, according to the present invention, after the first removal step shown in FIG. 2 (e) or the second removal step shown in FIG. 2 (f), as shown in FIG. Alternatively, the protective film 109 is preferably formed on the exposed region of the Pt-based alloy barrier layer 105 and the entire surface of the light emitting structure 102. The protective film 109 can be formed of an insulating material such as SiO ₂ or TiO ₂ by various film forming methods such as a CVD method or a sputtering method. By forming the protective film 109, it is possible to prevent the element from being short-circuited and to reduce the leakage current.

  Although not shown in the drawings, an electrode is formed on the exposed surface of the light emitting structure. The electrode is formed before the protective film 109 is formed, and after the protective film 109 is formed, the electrode formed on the exposed surface of the semiconductor structure 102 is masked so that the upper surface opens, and then the protective film 109 is formed by performing an etching process. The electrode may be exposed by removing a part thereof, or after masking after forming the protective film 109, the protective film 109 on the exposed surface side of the semiconductor structure is partially removed by etching, and the opening is formed. An electrode may be formed on the substrate. The formation region of the protective film 109 is on the exposed surface after Au or Sn etching, on the side wall of the light emitting structure, and on the peeling surface of the n-type semiconductor layer. The area of the electrode surface may be larger or smaller than the opening.

  Finally, as shown in FIG. 2 (h), a plurality of individual semiconductor light emitting elements can be manufactured by cutting a plurality of light emitting structures 102 by dicing or the like.

Thus, the semiconductor light emitting device 100 according to the present invention is obtained.
As shown in FIG. 4, the semiconductor light emitting device 100 according to the present invention has a Pt-based alloy barrier layer 105, a second bonding layer 108 ′ including an Sn-containing layer 107 ′ and an Au-containing layer 106 ′ on the surface of the support member 104. An Sn-containing layer 107 ′ including the first bonding layer 103, the p-side electrode 102 a, and the light emitting structure 102, and the outer peripheral portion of the Pt-based alloy barrier layer 105 not bonded to the first bonding layer 103. It is characterized by having a protective film 109 on the entire surface of the exposed region or the region where the Pt-based alloy barrier layer 105 is exposed (in FIG. 4, the region where the Pt-based alloy barrier layer 105 is exposed), and the light emitting structure 102, By adopting such a structure, the adhesion with the protective film can be improved, and thus the reliability and yield of the element can be improved.

  The support member 104 is preferably a metal substrate such as Mo or CuW, a semiconductor substrate such as Si or GaAs, or the like, which has better thermal conductivity than sapphire. When the support member 104 is a material having high conductivity such as a metal, it may be used as a part of the p-side electrode. Alternatively, an electrode (p-side pad electrode) necessary for electrical connection as an element is newly formed at any place including the exposed region other than the joint portion between the support member 104 and the light emitting structure 102. Also good.

  As the Pt-based alloy barrier layer 105, pure Pt is optimal, but an alloy containing 50% by mass or more, preferably 80% by mass or more of Pt can also be used. The thickness of the Pt-based alloy barrier layer is preferably in the range of 50 to 500 nm. This is because if the thickness is less than 50 nm, the function as a barrier layer is insufficient, and if the thickness exceeds 500 nm, the cost may increase or the film may be easily peeled off. In addition, when an Rh layer or Ru layer is used instead of Pt, or when there is an Rh layer or Ru layer between the Pt layer and the Au layer, Au can be removed with an Au etching solution after the heat treatment. It is known that it will disappear, and cannot be used in the present invention. Therefore, it is considered that when the Pt-based alloy barrier layer 105 is used and appropriate bonding conditions are used, the unique behavior of the Au layer and the Sn layer as seen in the present invention is caused.

  Although not shown in the drawing, a metal capable of improving the adhesion between the support member 104 and the Pt-based alloy barrier layer 105 is adhered between the support member 104 and the Pt-based alloy barrier layer 105. The layer is preferably provided as a layer and can be selected according to the type of the support member 104. Ti, Cr or Ni is preferably used for the adhesion layer. In addition, it is thought that there is no influence on the effect of this invention by the kind of this contact | adherence layer.

  The Au-containing layer 106 ′ constituting the second bonding layer 108 ′ is an alloy containing at least 80% by mass of Au and can be selectively etched with an Au etching solution. Most preferred is an Au layer. The Sn-containing layer 107 'can be made of an alloy containing at least 80% by mass of Sn and can be selectively etched with respect to Pt. Most preferably, it is a Sn layer. The thickness of the Sn-containing layer 107 ′ is preferably in the range of 50 to 500 nm. If the thickness is less than 50 nm, bonding may be insufficient, and if the thickness exceeds 500 nm, diffusion to the Pt-based alloy at the time of bonding is not sufficiently performed. On the other hand, the thickness of the Au-containing layer 106 ′ is preferably in the range of 200 to 3000 nm. If the thickness of the Au alloy layer is less than 200 nm, bonding may be insufficient. If the thickness of the Au alloy layer exceeds 3000 nm, the cost increases and the etching time after bonding is unnecessarily long. It is to become. The first bonding layer 103 may be a metal layer such as Au.

  The light emitting structure 102 is preferably configured in the order of a p-type semiconductor layer, a light emitting layer, and an n-type semiconductor layer from the first bonding layer side, and an n-side electrode 102b is provided on the n-type semiconductor layer. it can. In addition, when the emission wavelength is in the range of 200 to 500 nm, the effects of the present invention can be obtained more advantageously.

  The above description shows an example of an embodiment of the present invention, and the present invention is not limited to this embodiment.

Example 1
A lift-off layer (Cr, thickness: 10 nm) is formed on a growth substrate (sapphire, thickness: 430 μm) by sputtering, and after nitriding in an MOCVD furnace, a light emitting structure (n -type GaN layer, InGaN light-emitting layer, p-type GaN layer: forming an emission wavelength 400 nm), followed by a plasma CVD method on the light emitting structure to form the SiO _2, the SiO ₂ were patterned and etched using a photoresist A mask pattern was formed. Thereafter, the light emitting structure was separated into a plurality of independent elements by dry etching. Thereafter, a p-side electrode layer (Ni / Au thickness: 5/20 nm) for forming an ohmic junction is formed on the p-type GaN of the light emitting structure by sputtering, and then the first junction layer (Au layer, thickness) is formed. : 1 μm) was formed by sputtering. On the other hand, an adhesion layer (Cr, thickness: 25 nm), a Pt-based alloy barrier layer (Pt, thickness: 200 nm), a second bonding layer (Au / Sn) are formed on the entire surface of the support member (Mo, thickness: 200 μm). / Au layer, thickness: 100/200/1000 nm) were sequentially formed by sputtering.
Next, the Au layer of the first bonding layer and the Au layer of the second bonding layer were brought into contact with each other, and thermocompression bonded at 300 ° C. for 60 minutes in a vacuum atmosphere.
Thereafter, the bonded growth substrate and the supporting member were immersed in a ceric ammonium nitrate solution, and the lift-off layer was etched to separate the light emitting structure from the growth substrate.
Thereafter, the Au layer of the second bonding layer in the non-bonded region where the first bonding layer is not bonded on the surface of the support member was removed by etching to expose the Sn layer. The removal of the Au layer was performed by performing an etching process for 30 minutes using an Au etching solution (AURUM, manufactured by Kanto Chemical Co., Inc.).
After the Au layer of the second bonding layer described above is removed by etching to expose the Sn layer, the exposed Sn-containing layer is further removed by performing an etching process using an HCl solution for 10 minutes to obtain a Pt group. The alloy barrier layer was exposed. Note that due to the movement of Sn to the Pt-based alloy barrier layer side during bonding, the Au that was between the Pt-based alloy barrier layer and Sn in the second bonding layer during film formation is removed together with the etching of the Au layer. It was.
Next, a protective film (SiO ₂ , thickness: 100 nm) is formed on the entire surface of the exposed Pt-based alloy barrier layer and the light emitting structure, and a part of the protective film is formed by patterning using a photoresist and dry etching. It removed and the opening part was formed in the upper surface. Thereafter, an n-type electrode (Ti / Al, thickness: 20/300 nm) was formed in the opening to produce a semiconductor light emitting device.

(Example 2)
It was produced in the same manner as in Example 1 except that a Si substrate was used as the support member and Ti was used as the adhesion layer. In this example, a conductive Si substrate was used as the Si substrate, and (Ti / Pt / Au, thickness: 10/200/1000 nm) was formed as a p-side pad electrode on the back surface.

(Example 3)
It was produced in the same manner as in Example 1 except that the Sn-containing layer was not etched.

(Comparative Example 1)
It was fabricated in the same manner as Example 1 except that the Au-containing layer and the Sn-containing layer were not etched.

(Comparative Example 2)
It was produced in the same manner as in Example 1 except that the Pt-based alloy barrier layer was not formed.

(Comparative Example 3)
It was produced in the same manner as in Example 2 except that Rh was used instead of the Pt-based alloy barrier layer.

(Comparative Example 4)
It was produced in the same manner as in Example 2 except that Ru was used instead of the Pt-based alloy barrier layer.

FIG. 5 shows the component structure of the second bonding layer after the heat treatment of the semiconductor light emitting device according to Examples 1 and 3 and Comparative Example 1, and FIG. 6 shows the second bonding layer after the heat treatment of the semiconductor light emitting device according to Comparative Example 2. 7 is a component configuration of the second bonding layer after the heat treatment of the semiconductor light emitting device according to the comparative example 3, and FIG. 8 is a second bonding layer after the heat treatment of the semiconductor light emitting device according to the comparative example 4. It is the component composition of.
For the semiconductor light emitting devices of Examples 1 to 3 and Comparative Examples 1 to 4 having such a component structure, the reflectance was measured with a spectrophotometer with respect to the exposed surface after the bonding step and the exposed surface after the predetermined etching, and The results of measuring the adhesion with the protective film by a tape test are summarized in Table 1. FIG. 9 is a graph showing the light reflectance of the exposed surface of the semiconductor light emitting devices of Examples 1 and 3 and Comparative Example 1.

In Table 1, the adhesiveness was evaluated by performing a tape test and observing whether or not the protective film was peeled off. The evaluation criteria are as follows. The tape used for the tape test was a mending tape (manufactured by Sumitomo 3M Limited).
○: No peeling ×: With peeling Also, the reflectance was evaluated as follows.
○: The reflectance at a wavelength of 400 nm is 20% or more ×: The reflectance at a wavelength of 400 nm is less than 20%

From Table 1, it can be seen that the semiconductor light-emitting device according to the present invention has higher adhesion to the protective film than that of Comparative Examples 1 to 4, and the product yield can be improved. Further, from FIG. 9, at a wavelength of 400 nm, the reflectance of the exposed surface of Comparative Example 1 in which the Au layer and the Sn layer are not etched is 8%, and the exposed surface of Example 3 in which only the Au layer is etched is reflected. Although the rate was 9%, it can be seen that the reflectance of the exposed surface of Example 1 where both the Au layer and the Sn layer were etched was improved to 22%. Compared with Example 1, it turns out that luminous efficiency can be improved.
In Example 1, the reflectance was 22% due to the roughness of the surface of the Pt layer after etching the Sn layer, but the reflectance approaches the original reflectance of Pt by cleaning the surface of the Pt layer. It is clear.
Au clearly decreases in reflectance for wavelengths less than 500 nm, but Pt maintains high reflectance for wavelengths of 500 nm or less. Therefore, in the light emitting device having an emission wavelength of 500 nm or less, the present invention particularly exhibits the effect of improving the light emission efficiency.

  According to the present invention, the second bonding layer including the Pt-based alloy barrier layer and the Au-containing layer and the Sn-containing layer is sequentially formed on the entire surface of the support member, and the second in the region where the first bonding layer is not bonded. By removing the Au-containing layer and further the Sn-containing layer of the bonding layer by etching to expose the Pt-based alloy barrier layer, the Pt-based alloy barrier layer can be effectively exposed in the non-bonded region of the second bonding layer. As a result, the reflectance of light and the adhesion to the protective film can be improved, and as a result, a semiconductor light emitting device with improved light emission efficiency and yield can be obtained.

DESCRIPTION OF SYMBOLS 100 Semiconductor light emitting element 101 Growth substrate 102 Light emitting structure 103 1st joining layer 104 Support member 105 Pt base alloy barrier layer 106 'Au containing layer 107' Sn containing layer 108, 108 '2nd joining layer 109 Protective film 102a p side electrode 102b n-side electrode

Claims (6)

Forming an independent light emitting structure having a p-side electrode layer and a first bonding layer on the p-side electrode layer on a growth substrate;
Sequentially forming a Pt-based alloy barrier layer and a second bonding layer containing Au and Sn on the entire surface of the support member;
A bonding step of thermally bonding the first bonding layer and the second bonding layer;
A peeling step of peeling the growth substrate from the light emitting structure by lift-off;
And a first removal step of removing, by etching, the Au-containing layer of the second bonding layer in a non-bonded region where the first bonding layer is not bonded on the surface of the support member. Device manufacturing method.   2. The method of manufacturing a semiconductor light emitting element according to claim 1, further comprising a second removal step of removing the Sn-containing layer exposed by etching of the Au-containing layer by etching after the first removal step.   The method for manufacturing a semiconductor light emitting element according to claim 1, wherein the thermal bonding is performed at 250 ° C. or higher. Wherein after the first removal step or said second removal step, before Symbol Au Sn-containing layer is exposed by etching-containing layer or the Sn exposed by etching of the layer containing the Pt-based alloy barrier layer, the side surface of the light emitting structure , and, on the release surface of the light emitting structure in which the growth substrate has been peeled off in the peeling step, according to claim 1, 2 or 3 further comprising the step of forming a protective film made of SiO ₂ or TiO ₂ Manufacturing method of the semiconductor light-emitting device. On the surface of the support member, a Pt-based alloy barrier layer, an Sn-containing layer, an Au-containing layer, a metal layer bonded to the Au-containing layer, and a light emitting structure are provided in this order .
Has an exposed area where the metal layer on the surface of the support member is not joined, the exposed areas the surface of an the Pt-based alloy barrier layer or the Sn-containing layer, the Pt-based alloy barrier layer or the A semiconductor light emitting element comprising a protective film made of SiO ₂ or TiO ₂ on the surface of the Sn-containing layer and at least on the side surface of the light emitting structure.   6. The semiconductor light emitting device according to claim 5, wherein the emission wavelength is 200 to 500 nm.

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