JP5535249B2 - Lighting device - Google Patents

Description

  The present invention relates to a lighting device including a semiconductor light emitting device.

  In recent years, development of a semiconductor light emitting device and a lighting device using a semiconductor light emitting element such as a light emitting diode (LED) as a light source has been advanced (for example, see Patent Document 1). A lighting device including a semiconductor light emitting device has attracted attention with respect to power consumption or product life. When this lighting device is used, for example, outdoors, there is a demand for a technique for preventing the semiconductor light emitting device from being electrically short-circuited even if water droplets or dust enters the inside of the lighting device.

JP 2010-61909 A

  An object of the present invention is to provide an illuminating device capable of suppressing a semiconductor light emitting device from being electrically short-circuited to stop light emission and capable of emitting light over a long period of time.

An illumination device according to an embodiment of the present invention includes a semiconductor light emitting device, a translucent substrate positioned on the semiconductor light emitting device, a bottom portion on which the semiconductor light emitting device is disposed, and a pair that supports the translucent substrate. And a pair of first recesses that are open to the support portion side are provided at the bottom of the housing located on both sides of the semiconductor light emitting device. It has the 2nd recessed part opened toward the 1st recessed part side, It is characterized by the above-mentioned.
As a preferred aspect of the present invention, it is desirable that the opening width of the first concave portion is widened toward the support portion side.
As a preferred aspect of the present invention, it is desirable that the inner surface of the first recess is circular.
As a preferred aspect of the present invention, it is desirable that a gap exists between the translucent substrate and the inner wall of the support portion .
As a preferred aspect of the present invention, it is desirable that the bottom portion has third recesses located on both sides of the semiconductor light emitting device on a surface opposite to the surface on which the semiconductor light emitting device is disposed. .

  ADVANTAGE OF THE INVENTION According to this invention, the illuminating device which can light-emit over a long term can be provided.

It is a general | schematic perspective view of the illuminating device which concerns on this embodiment, Comprising: The state which made the translucent board | substrate slide with respect to a housing | casing is shown. It is a general | schematic perspective view of the illuminating device which concerns on this embodiment, Comprising: The state which removed the translucent board | substrate is shown. It is a top view of the illuminating device which concerns on this embodiment. It is sectional drawing of the illuminating device which concerns on this embodiment, Comprising: The cross section along X-X 'of FIG. 3 is shown. It is a general | schematic perspective view of the semiconductor light-emitting device of the illuminating device which concerns on this embodiment. FIG. 6 is a cross-sectional view of the semiconductor light emitting device of the illumination device according to the present embodiment, showing a cross section along Y-Y ′ of FIG. 5. It is sectional drawing of the illuminating device which concerns on one modification, Comprising: The cross section along X-X 'of FIG. 3 is shown. It is sectional drawing of the illuminating device which concerns on one modification, Comprising: The cross section along X-X 'of FIG. 3 is shown. It is sectional drawing of the illuminating device which concerns on one modification, Comprising: The cross section along X-X 'of FIG. 3 is shown. It is sectional drawing of the illuminating device which concerns on one modification, Comprising: The state which has attached the illuminating device shown in FIG. 9 to the external member is shown.

  Embodiments of a lighting device according to the present invention will be described below with reference to the accompanying drawings. In addition, this invention is not limited to the following embodiment.

  FIG. 1 is a schematic perspective view of the lighting device, and shows a state in which a translucent substrate is slid from the housing in the longitudinal direction of the housing. FIG. 2 is a schematic perspective view of the lighting device, and shows a state in which the translucent substrate is removed to show the inside of the housing. FIG. 3 is a plan view of the lighting device and shows the distance between the plurality of semiconductor light emitting devices. FIG. 4 is a cross-sectional view of the lighting device and shows a cross-sectional shape of the housing. FIG. 5 is a schematic perspective view showing the inside of the semiconductor light emitting device. FIG. 6 is a cross-sectional view of the semiconductor light emitting device.

≪Configuration of lighting device≫
The lighting device 1 is directly attached to a room such as a ceiling or a wall, or is used outdoors. And the light emitted from the illuminating device 1 can illuminate indoors or outdoors.

  As shown in FIGS. 1 and 2, the lighting device 1 is supported by a housing 2 having a pair of support portions 2 a, a semiconductor light emitting device 3 provided in the housing 2, and a pair of support portions 2 a, A translucent substrate 4 is provided which covers the semiconductor light emitting device 3 with a gap from the semiconductor light emitting device 3.

  The housing 2 has a function of holding the translucent substrate 4 and a function of dissipating heat generated by the semiconductor light emitting device 3 to the outside. The housing 2 is made of, for example, a metal such as aluminum, copper, or stainless steel, plastic, resin, or the like, has a rectangular parallelepiped shape, and has an opening H at the top. The bottom surface of the housing 2 is formed flat, and a plurality of semiconductor light emitting devices 3 can be mounted on the bottom surface of the housing 2. The semiconductor light emitting device 3 is fixed in the housing 2 via the wiring board 5.

  As shown in FIG. 3, the length of one side of the housing 2 in a plan view is set to, for example, 100 mm or more and 2000 mm or less. Moreover, the length from the lower surface of the housing | casing 2 to the upper end of the support part 2a of the housing | casing 2 is set to 10 mm or more and 50 mm or less, for example.

  The housing 2 efficiently dissipates heat generated by the semiconductor light emitting device 3 to the outside, so that the semiconductor light emitting device 3 or the translucent substrate 4 is deformed or the transmissivity of the translucent substrate 4 is reduced. Can be suppressed, and the directivity of the light extracted to the outside can be maintained well.

  Further, the housing 2 efficiently dissipates heat generated by the semiconductor light emitting device 3 to the outside, whereby the peak wavelength of light emitted from the light emitting element 32 of the semiconductor light emitting device 3 changes or the light emission of the light emitting element 32 occurs. It is suppressed that efficiency falls or the transmittance | permeability of the wavelength conversion part 36 or the efficiency of wavelength conversion falls. In addition, the thermal conductivity of the housing | casing 2 is set to 10 W / m * K or more and 500 W / m * K or less, for example.

  As shown in FIG. 4, the housing 2 is provided with a pair of support portions 2 a. The pair of support portions 2 a support the translucent substrate 4. A space between upper portions of the pair of support portions 2a corresponds to the opening H. The pair of support portions 2 a are part of the housing 2.

<Configuration of semiconductor light emitting device>
The semiconductor light emitting device 3 emits emitted light toward the outside. As shown in FIG. 3, a plurality of semiconductor light emitting devices 3 are arranged in a line shape in one direction, preferably along the longitudinal direction in the housing 2. As shown in FIGS. 5 and 6, the semiconductor light emitting device 3 includes a mounting substrate 31, a light emitting element 32 provided on the mounting substrate 31, a frame 33 surrounding the light emitting element 32, and a region surrounded by the frame 33. A sealing resin 34 provided and a wavelength conversion unit 36 supported by the frame 33 and connected to the frame 33 via the adhesive resin 35 are provided.

  The semiconductor light emitting device 3 includes, for example, a light emitting diode (LED) as the light emitting element 32, and the electrons and holes in the pn junction in the light emitting element 32 are recombined so that the light emitting element 32 is externally connected. Light is emitted toward. Note that the light emitting element 32 has excellent directivity because the light intensity of the side lobes is particularly small in the light distribution of light emission and the light emission is concentrated in the center of the light distribution.

  The mounting substrate 31 is provided on the wiring substrate 5. The wiring board 5 and the mounting board 31 are joined so as to be electrically connected via solder or a conductive adhesive. The mounting substrate 31 can be made of, for example, a ceramic material such as alumina, mullite, or glass ceramics, or a composite material obtained by mixing a plurality of these materials. The mounting substrate 31 can be made of a polymer resin in which metal oxide fine particles are dispersed.

  When the surface of the mounting substrate 31 is a diffusion surface, the light emitted from the light emitting element 32 is irradiated on the surface of the mounting substrate 31 and diffusely reflected. And the light which the light emitting element 32 emits can be radiated | emitted in multiple directions by diffuse reflection, and it can suppress that the light emitted from the light emitting element 32 concentrates on a specific location.

  Here, the mounting substrate 31 is provided with a wiring conductor, and is electrically connected to the wiring substrate 5 via the wiring conductor. The wiring conductor is made of a conductive material such as tungsten, molybdenum, manganese, or copper. The wiring conductor is obtained, for example, by printing a metal paste obtained by adding an organic solvent to a powder such as tungsten on the mounting substrate 31 in a predetermined pattern.

  The light emitting element 32 is mounted on the mounting substrate 31. Specifically, the light emitting element 32 is electrically connected to the wiring conductor formed on the mounting substrate 31 via, for example, an adhesive material such as solder or a conductive adhesive, or a bonding wire.

  The light emitting element 32 uses a chemical vapor deposition method such as a metal organic chemical vapor deposition method or a molecular beam epitaxial growth method on a substrate such as sapphire, gallium nitride, aluminum nitride, zinc oxide, silicon carbide, silicon, or zirconium diboride. Thus, the semiconductor layer is grown. The thickness of the light emitting element 32 is, for example, 30 μm or more and 1000 μm or less.

The light emitting element 32 includes a first semiconductor layer, a light emitting layer formed on the first semiconductor layer, and a second semiconductor layer formed on the light emitting layer. The first semiconductor layer, the light emitting layer, and the second semiconductor layer are, for example, a group III nitride semiconductor, a group III-V semiconductor such as gallium phosphide or gallium arsenide, or a group III nitride such as gallium nitride, aluminum nitride, or indium nitride. A semiconductor or the like is used. In addition, the light emitting element 32 configured as described above can emit excitation light having a wavelength range of 370 nm to 420 nm, for example.

A frame-shaped frame 33 is provided on the mounting substrate 31 so as to surround the light emitting element 32. The frame 33 is connected to the mounting substrate 31 via, for example, solder or an adhesive. Frame 33
Is a ceramic material, and for example, a porous material such as aluminum oxide, titanium oxide, zirconium oxide or yttrium oxide is used. The frame 33 is made of a porous material, and many fine holes are formed on the surface of the frame 33.

  The frame 33 is formed so as to surround the light emitting element 32 with a space from the light emitting element 32. The region surrounded by the inner wall surface of the frame 33 is formed so as to expand outward as it goes from the lower end to the upper end. The inner wall surface of the frame 33 functions as a reflection surface for excitation light emitted from the light emitting element 32. When the inner wall surface of the frame 33 is a diffusing surface, the light emitted from the light emitting element 32 is diffusely reflected on the inner wall surface of the frame 33. And it can suppress that the light emitted from the light emitting element 32 concentrates on a specific location.

  Further, on the surface of the inclined inner wall surface of the frame 33, for example, a metal layer made of tungsten, molybdenum, copper, silver, or the like and a plated metal layer made of nickel, gold, or the like covering the metal layer are formed. Also good. The plated metal layer has a function of reflecting light emitted from the light emitting element 32. The inclination angle of the inner wall surface of the frame 33 is set to an angle of 55 degrees or more and 70 degrees or less with respect to the upper surface of the mounting substrate 31, for example.

  A region surrounded by the frame 33 is filled with a sealing resin 34. The sealing resin 34 has a function of sealing the light emitting element 32 and transmitting light emitted from the light emitting element 32. The sealing resin 34 is a region surrounded by the frame 33 in a state where the light emitting element 32 is accommodated inside the frame 33. As the sealing resin 34, for example, a translucent insulating resin such as a silicone resin, an acrylic resin, or an epoxy resin is used.

  The wavelength conversion unit 36 is supported by the frame 33 and is provided to face the light emitting element 32 with a space therebetween. That is, the wavelength conversion unit 36 is provided in the frame 33 via the sealing resin 34 that seals the light emitting element 32 and the gap. The wavelength conversion unit 36 is joined to the frame body 33 via the adhesive resin 35. The adhesive resin 35 is attached from the end of the lower surface of the wavelength conversion unit 36 to the side surface of the wavelength conversion unit 36 and further to the end of the upper surface of the wavelength conversion unit 36.

  As the adhesive resin 35, for example, a thermosetting resin such as a polyimide resin, an acrylic resin, an epoxy resin, a urethane resin, a cyanate resin, a silicone resin, or a bismaleimide triazine resin is used. Further, as the adhesive resin 35, for example, a thermoplastic resin such as a polyether ketone resin, a polyethylene terephthalate resin, or a polyphenylene ether resin can be used.

  As the material of the adhesive resin 35, a material having a thermal expansion coefficient that is between the thermal expansion coefficient of the frame 33 and the thermal expansion coefficient of the wavelength conversion unit 36 is used. By using such a material as the material of the adhesive resin 35, when the frame 33 and the wavelength conversion unit 36 are thermally expanded, both of them try to peel off due to the difference in thermal expansion coefficient between them. Can be suppressed, and both can be well connected.

  By adhering the adhesive resin 35 to the end portion of the lower surface of the wavelength conversion unit 36, the area to which the adhesive resin 35 is applied can be increased, and the frame 33 and the wavelength conversion unit 36 can be firmly connected. it can. As a result, the connection strength between the frame 33 and the wavelength conversion unit 36 can be improved, and bending of the wavelength conversion unit 36 is suppressed. And it can suppress effectively that the optical distance between the light emitting element 32 and the wavelength conversion part 36 is fluctuate | varied.

The wavelength conversion unit 36 emits light when excitation light emitted from the light emitting element 32 enters the inside and the phosphor contained therein is excited. Here, the wavelength conversion unit 36 is made of, for example, a silicone resin, an acrylic resin, an epoxy resin, or the like, and emits a blue phosphor that emits fluorescence of, for example, 430 nm to 490 nm in the resin, for example, fluorescence of 500 nm to 560 nm. A green phosphor, for example, a yellow phosphor that emits fluorescence of 540 to 600 nm, for example, a red phosphor that emits fluorescence of 590 to 700 nm is contained. The phosphor is contained so as to be uniformly dispersed in the wavelength converter 36. In addition, the thickness of the wavelength conversion part 36 is set to 0.5 mm or more and 3 mm or less, for example.

  Further, the thickness of the end portion of the wavelength conversion unit 36 is set to be constant. The thickness of the wavelength conversion part 36 is set to 0.5 mm or more and 3 mm or less, for example. Here, the constant thickness includes a thickness variation of 0.1 mm or less. By making the thickness of the wavelength conversion unit 36 constant, the amount of light excited by the wavelength conversion unit 36 can be adjusted uniformly, and uneven brightness in the wavelength conversion unit 36 can be suppressed.

  The translucent substrate 4 is provided at the edge of the opening H of the housing 2. The semiconductor light emitting device 3 can be protected from the outside in the housing 2 by providing the translucent substrate 4 in the housing 2 in a state where the semiconductor light emitting device 3 is mounted in the opening H of the housing 2.

  The translucent substrate 4 is made of a material through which light emitted from the semiconductor light emitting device 3 is transmitted, and is made of, for example, a light transmissive material such as acrylic resin or glass. The translucent substrate 4 is a rectangular plate, and is supported by the support portion 2 a of the housing 2. Since the translucent substrate 4 is sandwiched and supported by the support portion 2a, the translucent substrate 4 can be prevented from falling. The translucent substrate 4 has a side length of, for example, 98 mm or more and 1998 mm or less in plan view. Moreover, the thickness of the up-down direction of the translucent board | substrate 4 is set to 0.3 mm or more and 3 mm or less, for example.

  The wiring board 5 is provided on the bottom surface in the housing 2. The wiring board 5 is for mounting the semiconductor light emitting device 3. As the wiring board 5, for example, a printed board such as a rigid board, a flexible board, or a rigid flexible board is used. The wiring pattern of the wiring substrate 5 and the wiring pattern of the mounting substrate 31 are electrically connected via solder or a conductive adhesive. Then, a signal from the wiring board 5 is transmitted to the light emitting element 32 through the mounting board 31 and the light emitting element 32 emits light. Note that electricity is supplied to the wiring board 5 from an external power supply via wiring.

  The housing 2 is provided with a pair of support portions 2a. The housing | casing 2 has the side where the location in which a pair of support part 2a was provided opposes, and protects the inside of the housing | casing 2 with these pair of support parts 2a. Further, the side surface of the housing 2 where the pair of support portions 2a are not provided is open. Then, the translucent substrate 4 can be slid in the plane direction from the side surface of the housing 2 where the housing 2 is opened to enter the housing 2. In a state where the translucent substrate 4 is fitted in the housing 2, the lid 2 b that is a rectangular plate is fitted on the open side of the housing 2, and the translucent substrate 4 is mounted on the housing 2. It can be aligned and fixed so as not to be displaced. The support portion 2 a is provided in the opening H of the housing 2 and extends from the bottom surface of the housing 2 to the opening H. A gap is provided between the inner wall surface of the housing 2 and the wiring board 5 or the semiconductor light emitting device 3.

  The pair of support portions 2a are provided with a concave holding portion 2c for holding the translucent substrate 4 and the semiconductor light emitting device 3 in the housing 2 and below the pair of support portions 2a. A recess C is provided. The translucent substrate 4 is supported in contact with both one inner wall surface of the pair of holding portions 2c and the other inner wall surface of the pair of holding portions 2c.

The holding part 2c has a rectangular shape when viewed in cross section, and is set to a size into which the end of the translucent substrate 4 is fitted. The size of the holding portion 2c provided in each of the pair of support portions 2a is slightly larger than the size of the end portion of the translucent substrate 4, thereby holding the translucent substrate 4 along the plane direction. 2c can be fitted. In addition, as for the holding | maintenance part 2c, the magnitude | size of the hollow of the planar direction along the bottom face of the housing | casing 2 is set to 2 mm or more and 10 mm or less, for example.

  The recess C has a section in the vicinity of the opening of the recess C that extends toward the upper edge when viewed in cross section. In addition, the recess C has a circular shape at the bottom when viewed in cross section. The height position of the upper edge of the recess C is set to be higher than the height position of the lower surface of the semiconductor light emitting device 3. In addition, the shape of the lower part of the recessed part C is not limited to circular shape, An elliptical shape may be sufficient.

  In addition, the recess C may be arranged on the outer side of the housing 2 with respect to the bottom surface of the housing 2 on which the wiring substrate 5 is mounted when viewed from a cross-section. As a result, the path of heat transmitted from the semiconductor light emitting device 3 or the wiring substrate 5 to the light transmitting substrate 4 via the pair of support portions 2a is further narrowed, and the heat generated in the semiconductor light emitting device 3 or the wiring substrate 5 is Since it is difficult for the bottom surface of the body 2 to be transmitted to the translucent substrate 4 through the pair of supports 2a, the optical characteristics are deteriorated such that the transmissivity of the translucent substrate 4 is lowered or discolored by heat. Progress can be suppressed.

  Further, the holding portion 2c is provided with a recess C below the holding portion 2c in a cross-sectional view. In a state where the translucent substrate 4 is fitted to the holding portion 2c, a gap exists between the upper surface of the translucent substrate 4 and the inner wall surface of the recess C as shown in FIG. Further, a gap exists between the end surface of the translucent substrate 4 and the inner wall surface of the holding portion 2c. Temporarily, the translucent board | substrate 4 is fitted to the holding | maintenance part 2c, and the clearance gap between the translucent board | substrate 4 and the holding | maintenance part 2c is filled up with an adhesive agent etc., and the translucent board | substrate 4 is housing | casing 2 In the case of bonding to, it becomes inconvenient to remove the translucent substrate 4 from the holding portion 2c. And it becomes very difficult to replace the semiconductor light emitting device 3 mounted in the housing 2 and to maintain the lighting device 1. Therefore, the translucent substrate 4 is supported by fitting the end portion of the translucent substrate 4 to the holding portion 2c so that the translucent substrate 4 can be easily detached from the housing 2. Therefore, a gap exists between the upper surface of the translucent substrate 4 and the inner wall surface of the holding portion 2c.

  For example, water droplets are transmitted along the upper surface of the light-transmitting substrate 4 and the end surface of the light-transmitting substrate 4 from the gap between the light-transmitting substrate 4 and the holding portion 2 c, and the light-transmitting substrate is transmitted from the end surface of the light-transmitting substrate 4. Even if water droplets or the like penetrate into the lower surface of 4 and try to enter, the water droplets or the like can be accumulated in the recess C. If the recess C does not exist, water droplets or the like that have entered the housing 2 reach at least one of the wiring board 5 or the semiconductor light emitting device 3, and at least one of the wiring board 5 or the semiconductor light emitting device 3 is electrically connected. The semiconductor light emitting device 3 may not emit light. Therefore, by providing the concave portion C below the holding portion 2c, water droplets or the like entering the inside through the gap between the translucent substrate 4 and the holding portion 2c can be stopped in the concave portion C.

  Further, by providing a recess C in the lower part of the pair of support portions 2a in the housing 2 with the semiconductor light emitting device 3 therebetween, it enters the case 2 and is formed on the inner wall surface of the support portion 2a. Water droplets or the like flowing along can be accumulated in the recess C rather than reaching the semiconductor light emitting device 3 or the wiring substrate 5. Furthermore, the water droplets that have stopped in the concave portion C are heated by the heat from the semiconductor light emitting device 3 to heat the support portion 2a of the housing 2 to evaporate the water droplets in the concave portion C and dissipate to the outside from the path through which the water droplets have entered. Can do.

  Moreover, since the upper end edge of the recessed part C is opening, the water droplets etc. which entered into the housing | casing 2 can be easily stored in the recessed part C. FIG. Moreover, since the recessed part C is formed in the circular shape of the lower part, it is easy to collect a water droplet etc. and can make it difficult to leak outside.

In addition, the recess C is formed integrally with the housing 2 to which the wiring board 5 is fixed, so that heat from the light emitting element 32 is easily transmitted to the recess C through the housing 2, The water droplets and the like stored in the recess C are evaporated, and the heat energy in the housing 2 is absorbed by the heat of evaporation of the water droplets and the like, whereby the housing 2 is cooled, and the heat from the light emitting element 32 is transferred to the housing 2. Is dissipated outside.

  In addition, since the height position of the upper edge of the recess C is set higher than the height position of the lower surface of the semiconductor light emitting device 3, water droplets or the like that have entered the housing 2 reach the semiconductor light emitting device 3. It can be made easier to collect in the recess C from the opening edge of the recess C first. If the height position of the upper end edge of the recess C is lower than the height position of the lower surface of the semiconductor light emitting device 3, water droplets or the like that have entered the housing 2 do not accumulate in the recess C. There is an increased risk of reaching the semiconductor light emitting device 3 and causing the semiconductor light emitting device 3 to be electrically short-circuited.

  Further, by making a gap between the upper surface of the translucent substrate 4 and the inner wall surface of the holding portion 2c, water droplets or the like are attached to the end of the translucent substrate 4, and the heat of the translucent substrate 4 is increased. It can suppress that the temperature of the edge part of the translucent board | substrate 4 raises by a water drop etc. absorbing. And it can suppress that the translucent board | substrate 4 deform | transforms or discolors with a heat | fever.

  According to the present embodiment, by providing the recess C at the lower portion of the support portion 2a, water droplets can be removed from the gap between the translucent substrate 4 and the support portion 2a of the housing 2 that can be easily detached from the housing 2. Alternatively, even if dust or the like enters the housing 2, it can be stopped in the recess C, and the semiconductor light emitting device 3 can be prevented from being electrically short-circuited to stop emitting light and can emit light over a long period of time. The lighting device 1 can be provided.

  In addition, this invention is not limited to the above-mentioned embodiment, A various change, improvement, etc. are possible in the range which does not deviate from the summary of this invention.

<Modification>
Hereinafter, modifications of the embodiment of the present invention will be described. Note that, in the illuminating device 1 according to the modification of the embodiment of the present invention, the same portions as those of the illuminating device 1 according to the embodiment of the present invention are denoted by the same reference numerals, and description thereof will be omitted as appropriate. FIG. 7 is a diagram showing an illumination device 1a according to a modification, and corresponds to FIG. FIG. 8 is a diagram showing a lighting device 1b according to a modification, and corresponds to FIG. FIG. 9 is a diagram illustrating a lighting device 1c according to a modification, and corresponds to FIG. FIG. 10 shows a state in which the lighting device 1c shown in FIG. 9 is attached to an external member.

<Modification 1>
Although the illuminating device 1 which concerns on embodiment mentioned above was provided with the recessed part C only in the lower part of the support part 2a of the housing | casing 2, it is not restricted to this. For example, as shown in FIG. 7, a second recess C <b> 2 that opens downward may be provided in the housing 2 and at the top of the support portion 2 a. In addition, the recessed part C is called 1st recessed part C1 here.

  By providing the second recess C2, heat generated from the light emitting element 32 becomes difficult to be transmitted to the translucent substrate 4 through the housing 2, and therefore the transmittance of the translucent substrate 4 is reduced by heat and the machine. Strength deterioration can be suppressed.

  In addition, when the lighting device 1 is used in a state where the translucent substrate 4 is located below and the semiconductor light emitting device 3 is located above, water droplets or the like are likely to accumulate in the second recess C2. Water droplets or the like stored in the second recess C2 are easily evaporated through the surface of the second recess C2 heated by the heat of the light emitting element 32. And the temperature rise of the holding | maintenance part 2c is suppressed because the thermal energy of the peripheral part of the 2nd recessed part C2 is absorbed by the evaporation heats, such as a water droplet. Thereby, the holding | maintenance part 2c absorbs heat, the temperature rise of the translucent board | substrate 4 is suppressed, and the transmittance | permeability degradation and mechanical strength degradation of the translucent board | substrate 4 can be suppressed.

<Modification 2>
Although the illuminating device 1a which concerns on the modification 1 mentioned above had the lower surface of the housing | casing 2 formed flat, it is not restricted to this. For example, as shown in FIG. 8, a third recess C <b> 3 may be provided on the lower surface of the housing 2.

  The heat generated when the semiconductor light emitting device 3 emits light is transmitted to the housing 2 via the wiring substrate 5, and in particular, the heat is easily transmitted to a part of the housing 2 that overlaps the semiconductor light emitting device 3 when viewed in plan. . Therefore, a pair of third recesses C3 is provided on the lower surface of the housing 2 so as to sandwich a portion where the heat generated by the semiconductor light emitting device 3 is most easily transmitted.

  By providing the third recess C3, the heat transmitted to the housing 2 is concentrated in a region sandwiched between the pair of third recesses C3 so as to avoid the third recess C3, and further, a path for extracting the heat downward. Can be provided. Then, the heat from the semiconductor light emitting device 3 can be concentrated via the wiring substrate 5 at a location sandwiched between the third recesses C3 located immediately below the wiring substrate 5. As a result, the heat of the semiconductor light emitting device 3 can be made difficult to be transmitted from the bottom surface of the housing 2 to the support 2a, and the translucent substrate 4 is deteriorated by discoloration or the like through the housing 2. Can be suppressed.

  Further, by providing the third recess C3, the surface area of the lower surface of the housing 2 can be increased, and heat generated in the semiconductor light emitting device 3 or the wiring substrate 5 is dissipated from the surface of the third recess C3 to the atmosphere. Can be easier. In addition, since the illuminating device 1b can improve the heat dissipation of the housing | casing 2 via the 3rd recessed part C3 by forcibly circulating the atmosphere enclosed by the 3rd recessed part C3, the semiconductor light-emitting device 3 of FIG. The lighting device 1b can be operated without reducing the light emission efficiency. Further, the heat generated in the semiconductor light emitting device 3 or the wiring substrate 5 is transmitted to the light transmissive substrate 4 through the housing 2, and deterioration such as discoloration of the light transmissive substrate 4 proceeds. Can be suppressed.

<Modification 3>
The lighting device 1a according to the modified example 1 described above is provided with the first recess C1 on the bottom surface of the housing 2 and at the lower portion of the support 2a with the semiconductor light emitting device 3 interposed therebetween. Not limited to. For example, as shown in FIG. 9, the first recess C <b> 1 ′ may have an opening structure along the inner wall surface of the housing 2.

  In the first recess C <b> 1 ′ shown in FIG. 9, the height position of the upper edge of the first recess C <b> 1 ′ matches the height position of the lower surface of the wiring substrate 5. The first recess C <b> 1 ′ is set to be equal to or lower than the height position of the bottom surface of the housing 2. Furthermore, the height position of the bottom of the first recess C1 'is set to be lower than the height position of the ceiling of the third recess C3. As a result, as shown in FIG. 9, a part of the bottom of the housing 2 that is sandwiched between the first recess C <b> 1 ′ and the third recess C <b> 3 is bent. The first recess C1 ′ can reduce the heat generated in the semiconductor light emitting device 3 or the wiring board 5 from being transmitted toward the support portion 2a of the housing 2 through the lower portion of the housing 2. The temperature rise of the translucent substrate 4 supported by the support part 2a can be suppressed, and the deterioration of the transmittance and mechanical strength of the translucent substrate 4 can be suppressed. Further, the housing 2 is provided with the first recess C1 ′ and the third recess C3, so that the surface area of the housing 2 is increased, and the heat generated in the semiconductor light emitting device 3 or the wiring substrate 5 is generated by the first recess C1 ′. In addition, it is easy to be transmitted to the atmosphere, the inside of the housing 2 or water droplets accumulated in the first recess C1 ′ through the surface of the third recess C3. As a result, the illuminating device 1c can operate without reducing the light emission efficiency of the semiconductor light emitting device 3, and can suppress a decrease in transmittance due to heat of the light transmissive substrate 4 and progress of deterioration such as discoloration.

As shown in FIG. 9, the first recess C1 ′ is disposed so that the second recess C2 and the first recess C1 ′ face each other. Further, the first recess C1 ′ and the second recess C2 are provided to extend to both side surfaces of the housing 2 that are open. Therefore, when the illuminating device 1c is used in a state where the translucent substrate 4 is positioned downward and the semiconductor light emitting device 3 is positioned upward, the water droplets attached to the first recess C1 ′ fall below the second, It can be stored in the recess C2. Furthermore, since the 2nd recessed part C2 is extended to the side surface which the housing | casing 2 is opened, the water droplet collected in the 2nd recessed part C2 can be poured outside along the 2nd recessed part C2.

  Further, as shown in FIG. 10, the central portion located in the short direction perpendicular to the longitudinal direction of the casing 2 sandwiched between the pair of third recesses C3 is screwed to be fixed to an external member. A screw hole N for stopping may be provided. The screw S is tightened in the screw hole N. And the illuminating device 1c is screwed to an external member using the screw S. FIG. The screw S is made of a material having a higher thermal conductivity than that of the housing 2, so that the heat transmitted to the housing 2 is transmitted to an external member via the screw S, and the inside of the housing 2 is heated to a high temperature. It can be suppressed.

<Manufacturing method of lighting device>
Here, a method of manufacturing the lighting device shown in FIG. 1 will be described. First, the semiconductor light emitting device 3 is prepared. If the mounting substrate 31 and the frame 33 are made of, for example, an aluminum oxide sintered body, an organic binder, a plasticizer, a solvent, or the like is added to and mixed with the aluminum oxide raw material powder to obtain a mixture.

  The mounting substrate 31 is formed into a sheet-like ceramic green sheet, and the frame 33 is filled with the mixture in the mold and dried, and the mounting substrate 31 and the frame 33 before sintering are taken out.

  Moreover, a high melting point metal powder such as tungsten or molybdenum is prepared, and an organic binder, a plasticizer, a solvent, or the like is added to and mixed with the powder to obtain a metal paste. And it prints with the predetermined pattern on the ceramic green sheet used as the taken-out mounting substrate 31, laminates and fires a plurality of ceramic green sheets, and cuts into a predetermined shape. The frame 33 is formed by sintering at a desired temperature.

  Next, after the light emitting element 32 is electrically mounted on the wiring pattern on the mounting substrate 31 via solder, the frame 33 is bonded on the substrate with an adhesive such as acrylic resin so as to surround the light emitting element 32. To do. Then, the sealing resin 34 is formed by filling the region surrounded by the frame 33 with, for example, a silicone resin and curing the silicone resin.

  Next, the wavelength converter 36 is prepared. The wavelength conversion unit 36 can be produced by mixing a phosphor with an uncured resin and using, for example, a sheet molding technique such as a doctor blade method, a die coater method, an extrusion method, a spin coating method, or a dip method. it can. For example, the wavelength conversion unit 36 can be obtained by filling the mold with the uncured wavelength conversion unit 36 and curing it.

  And the semiconductor light-emitting device 3 is producible by adhere | attaching the prepared wavelength conversion part 36 on the frame 33 through the adhesive resin 35 which consists of resin, for example.

  Next, the housing 2 is prepared. The housing | casing 2 is integrally shape | molded by the extrusion molding method, for example. However, it is not necessarily formed by integral molding, and each member may be manufactured separately and fastened by a fastening means such as a screw, or each member may be bonded and integrated with an adhesive. Also good.

Further, a translucent substrate 4 is prepared. The translucent substrate 4 can be formed by extrusion.

  Moreover, the wiring board 5 is prepared. For example, a printed wiring board can be used as the wiring board 5. Then, the semiconductor light emitting device 3 is electrically mounted on the wiring board 5 via solder.

  Next, the wiring board 5 on which the semiconductor light emitting device 3 is mounted is accommodated in the housing 2 and fixed. Then, the transmissive substrate 4 is attached to the support portion 2a of the housing 2 so as to slide in the plane direction, and the lid body 2b is fitted to the vacant side surface of the housing 2, so that the lighting device 1 is manufactured. be able to.

DESCRIPTION OF SYMBOLS 1 Illuminating device 2 Case 2a Support part 2b Cover 2c Holding part 3 Semiconductor light-emitting device 31 Mounting board 32 Light emitting element 33 Frame 34 Sealing resin 35 Adhesive resin 36 Wavelength conversion part 4 Translucent board 5 Wiring board H Opening part C recess

Claims (5)

A semiconductor light emitting device, and a translucent substrate positioned on the semiconductor light emitting device;
A housing having a bottom portion on which the semiconductor light emitting device is disposed and a pair of support portions for supporting the translucent substrate, and the support on the bottom portion of the housing located on both sides of the semiconductor light emitting device. A lighting device , wherein a pair of first recesses that are open on a part side are provided, and the support part has a second recess that opens toward the first recess side . The lighting device according to claim 1, wherein an opening width of the first concave portion increases toward the support portion. The lighting device according to claim 1, wherein the first recess has a circular inner surface. 4. The lighting device according to claim 1, wherein a gap exists between the translucent substrate and the inner wall of the support portion. The bottom, the surface opposite to the surface on which the semiconductor light-emitting device is disposed, according to claim 1 to 4, characterized in that it has a third recess positioned on both sides of the semiconductor light emitting device The lighting device according to any one of the above.

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