JP5538697B2 - Semiconductor device test method - Google Patents

Description

  The present invention relates to a test technique in a method for manufacturing a semiconductor integrated circuit device (or a semiconductor device), and particularly to a technique effective when applied to a burn-in process.

  In Japanese Patent Application Laid-Open No. 2003-084030 (Patent Document 1), in a burn-in process for a BGA type semiconductor integrated circuit device, a target inserted into a plurality of burn-in sockets on a burn-in board mounted on the burn-in processing device is disclosed. A technique is disclosed that enables burn-in processing of a plurality of devices with a large amount of heat generation by pressing a heat sink unit from above onto an inspection device.

  In Japanese Patent Laid-Open No. 11-067396 (Patent Document 2), in a burn-in process for a BGA type semiconductor integrated circuit device, by inserting a socket pitch conversion board between the burn-in socket and the burn-in board, A technique that enables burn-in processing of a narrow-pitch device without further miniaturization or multilayering of the board is disclosed.

JP 2003-084030 A Japanese Patent Application Laid-Open No. 11-067396

  It has been clarified by the present inventors that the following problems occur in the burn-in process. That is, at the time of burn-in of an ultra-high speed SRAM with a large current and high heat generation, the device temperature rises and the thermal runaway occurs, causing the device to burn out. These ultra-high speed SRAM products use a conversion substrate for burn-in socket because of the narrow pitch BGA, but poor heat conduction in this part is the cause of thermal runaway. Although methods such as attaching a heat dissipation structure above the package were examined, it was found that scratches and dirt remained on the upper surface of the device, and workability was poor, making it unsuitable for mass production.

  The present invention has been made to solve these problems.

  An object of the present invention is to provide a manufacturing process of a semiconductor integrated circuit device suitable for mass production.

  The above and other objects and novel features of the present invention will be apparent from the description of this specification and the accompanying drawings.

  The following is a brief description of an outline of typical inventions disclosed in the present application.

  That is, according to the present invention, a heat conductive sheet is interposed between a burn-in board and a burn-in socket in a burn-in process in a manufacturing process of a semiconductor integrated circuit device using a socket / pitch conversion substrate.

  The effects obtained by the representative ones of the inventions disclosed in the present application will be briefly described as follows.

  In other words, in the burn-in process in the manufacturing process of the semiconductor integrated circuit device using the socket / pitch conversion substrate, a heat conduction sheet is interposed between the burn-in board and the burn-in socket, so that an ultra-high speed SRAM with a large current and a high heat generation can be obtained. The occurrence of thermal runaway due to poor heat dissipation during burn-in can be prevented.

[Outline of Embodiment]
First, an outline of a typical embodiment of the invention disclosed in the present application will be described.

1. A method of manufacturing a semiconductor integrated circuit device including the following steps:
(A) setting a device under test in each of a number of burn-in sockets installed on the first major surface of the burn-in board;
(B) after the step (a), introducing the burn-in board on which the device under test is set into a burn-in apparatus;
(C) after the step (b), performing a burn-in process in the burn-in apparatus;
Here, a socket / pitch conversion board is installed between each burn-in socket and the first main surface of the burn-in board, and the socket / pitch conversion board and the first main surface of the burn-in board. A heat dissipation sheet is installed between the faces.

  Next, an outline of another embodiment of the invention disclosed in the present application will be described.

2. A method of manufacturing a semiconductor integrated circuit device including the following steps:
(A) setting a device under test in each of a number of burn-in sockets installed on the first major surface of the burn-in board;
(B) after the step (a), introducing the burn-in board on which the device under test is set into a burn-in apparatus;
(C) after the step (b), performing a burn-in process in the burn-in apparatus;
Here, a back surface protection metal plate is installed on the second main surface side of the burn-in board, and the back surface protection metal plate and the second main surface of the burn-in board corresponding to each burn-in socket. A heat dissipation sheet is installed between them.

[Description format, basic terms, usage in this application]
1. In the present application, the description of the embodiment may be divided into a plurality of sections for convenience, if necessary, but these are not independent from each other unless otherwise specified. Each part of a single example, one part is the other part of the details, or part or all of the modifications. Moreover, as a general rule, the same part is not repeated. In addition, each component in the embodiment is not indispensable unless specifically stated otherwise, unless it is theoretically limited to the number, and obviously not in context.

  2. Similarly, in the description of the embodiment, etc., regarding the material, composition, etc., “X consisting of A” etc. is an element other than A unless specifically stated otherwise and clearly not in context. It is not excluded that one of the main components. For example, as for the component, it means “X containing A as a main component”. For example, “silicon member” is not limited to pure silicon, but also includes SiGe alloys, other multi-component alloys containing silicon as a main component, and members containing other additives. Needless to say.

  3. Similarly, suitable examples of graphics, positions, attributes, and the like are given, but it is needless to say that the present invention is not strictly limited to those cases unless explicitly stated otherwise, and unless otherwise apparent from the context.

  4). In addition, when a specific number or quantity is mentioned, a numerical value exceeding that specific number will be used unless specifically stated otherwise, unless theoretically limited to that number, or unless otherwise clearly indicated by the context. There may be a numerical value less than the specific numerical value.

  5. The term “semiconductor chip” or simply “chip” usually refers to a single crystal silicon chip on which a semiconductor integrated circuit device (same as a semiconductor device or an electronic device) is formed, but an epitaxial substrate, SOI substrate, LCD Needless to say, an insulating substrate such as a glass substrate and a composite substrate such as a semiconductor layer are also included. In the present application, the semiconductor as the substrate mainly refers to a silicon-based semiconductor, but may be a GaAs-based or other compound-based semiconductor.

  6). The “burn-in process” is a kind of screening process performed with various electrical characteristic tests performed during the manufacturing process of the semiconductor integrated circuit device, and is also called an aging process. Generally, a voltage higher than usual is applied at a high temperature (compared to room temperature) (for example, about 125 degrees Celsius), so it is called burn-in. Here, test burn-in is included.

  7). Although the description in the vertical direction is described corresponding to the drawing, the actual burn-in process can be performed by setting the burn-in board in an arbitrary orientation.

[Details of the embodiment]
The embodiment will be further described in detail. In the drawings, the same or similar parts are denoted by the same or similar symbols or reference numerals, and description thereof will not be repeated in principle.

1. Description of burn-in processing and the like in the method of manufacturing a semiconductor integrated circuit device of one embodiment of the present application (mainly FIGS. 1 to 3)
In this example, burn-in processing is applied to an ultrahigh-speed SRAM with a 0.5 millimeter pitch (about 800 to 900 pins) integrated on a silicon-based semiconductor substrate (chip) and having a BGA type package structure. Show.

  FIG. 1 is an overall cross-sectional view of a burn-in board used for burn-in processing in a method of manufacturing a semiconductor integrated circuit device according to an embodiment of the present application. FIG. 2 is a main portion corresponding to the cross section of FIG. 3XX ′ of the unit portion (corresponding to the R portion in FIG. 1) of the burn-in board used for the burn-in process in the manufacturing method of the semiconductor integrated circuit device according to the embodiment of the present application. It is sectional drawing. FIG. 3 is a schematic back view of a socket / pitch conversion board on a burn-in board used for burn-in processing in the method of manufacturing a semiconductor integrated circuit device according to the embodiment of the present application. Based on these, the burn-in process and the like in the method of manufacturing a semiconductor integrated circuit device according to the embodiment of the present application will be described.

  As shown in FIG. 1, the back surface 2b (second main surface) of the burn-in board main body 2 made of glass / epoxy wiring board or the like (generally a multilayer wiring board) is protected via a reinforcing frame 15. A metal plate 7 is attached. A large number of burn-in sockets 3 (for example, 50 to 150 pieces) are attached to the surface 2 a (first main surface) of the burn-in board main body 2 via the socket pitch conversion board 5. In each burn-in socket 3, a device to be processed 1 (for example, a device having a BGA type package shape) is set (see FIG. 2). In this state, the burn-in board 2 is mounted in a slot in the burn-in chamber of the burn-in device 4 together with a plurality of other burn-in boards 2 (usually several to several tens), and at a high temperature. Necessary voltages (including signals and the like) are applied from the outside of the burn-in board 2 and a burn-in process is executed.

  Next, details of the R portion in FIG. 1 will be described. As shown in FIG. 2, the device to be processed 1 is set in the burn-in socket 3 with the bump surface facing downward. Each bump electrode 14 is electrically connected to the socket contact pin 9 (directly or indirectly contact-connected). The socket contact pin 9 is inserted from the upper surface 5a side into the socket / pitch conversion board 5 made of the same glass / epoxy wiring board as the burn-in board body 2, and the socket / pitch conversion is performed at that portion. It is electrically connected to the substrate 5. These socket contact pins 9 are expanded and electrically connected to corresponding conversion board connection terminals 11 by multilayer wiring in the socket / pitch conversion board 5. The conversion board connection terminal 11 passes through the insulating frame 10 of the conversion board and is inserted into the burn-in board 2, where it is electrically connected to the burn-in board 2. The insulating frame 10 has a central recess 12, and the heat radiating sheet 6 is attached to that portion. Here, as the heat dissipation sheet 6, for example, a heat conductive sheet (silicone rubber) TC-200TXE manufactured by Shin-Etsu Silicone is suitable. The dimensions are, for example, 15 mm in length and width, and the thickness is about 2 mm.

  FIG. 3 shows the back surface of the socket / pitch conversion substrate 5, that is, the lower surface of the insulating frame 10. As shown in FIG. 3, there is a conversion board connection terminal array region 11 at the periphery of the insulating frame 10, and a center recess 12 at the center. The heat radiating sheet 6 is fixed to the central recess 12.

  In this way, by disposing the heat dissipation sheet 6 between the socket / pitch conversion board 5 and the burn-in socket 3, as shown in FIG. 2, the device 1 to be processed, the bump electrode 14, the heat dissipation sheet 6, and the burn-in board. A direct heat dissipation path comprising the main body 2 can be formed, and as a result, heat dissipation of the burn-in board 2 using the socket / pitch conversion board 5 can be improved. In addition, since the socket / pitch conversion board 5 can be used even in a fine pitch product, it is not necessary to use an expensive highly integrated multilayer wiring board, and the unit price of the burn-in board can be reduced. Can reduce costs.

2. Description of burn-in processing and the like in the method of manufacturing a semiconductor integrated circuit device according to another embodiment of the present application (mainly FIGS. 4 and 5)
This example is an example of burn-in processing for an ultrahigh-speed SRAM with a 1.0 millimeter-meter pitch (about 200 to 300 pins) integrated on a silicon-based semiconductor substrate (chip) and having a BGA package structure. Show.

  FIG. 4 is an overall cross-sectional view of a burn-in board used for burn-in processing in a method of manufacturing a semiconductor integrated circuit device according to another embodiment of the present application. FIG. 5 is a sectional view (corresponding to a portion R in FIG. 4) of a main part of a burn-in board used for a burn-in process in a method of manufacturing a semiconductor integrated circuit device according to another embodiment of the present application. Based on these, burn-in processing and the like in the method of manufacturing a semiconductor integrated circuit device according to another embodiment of the present application will be described.

  As shown in FIG. 4, on the back surface 2b (second main surface) of the burn-in board body 2 composed of a glass / epoxy wiring board or the like (generally a multilayer wiring board), a heat radiation sheet 6 and a reinforcing frame 15 are provided. A back surface protective metal plate 7 is attached through the gap. A large number of burn-in sockets 3 (for example, 50 to 150 pieces) are attached to the surface 2a (first main surface) of the burn-in board body 2. In each burn-in socket 3, a device to be processed 1 (for example, a device having a BGA type package shape) is set (see FIG. 5). In this state, the burn-in board 2 is mounted in a slot in the burn-in chamber of the burn-in device 4 together with a plurality of other burn-in boards 2 (usually several to several tens), and at a high temperature. Necessary voltages (including signals and the like) are applied from the outside of the burn-in board 2 and a burn-in process is executed.

  Next, details of the R portion of FIG. 4 will be described. As shown in FIG. 5, the device to be processed 1 is set in the burn-in socket 3 with the bump surface down. Each bump electrode 14 is electrically connected to the socket contact pin 9 (directly or indirectly contact-connected). Socket contact pins 9 are inserted into the burn-in board 2 where they are electrically connected to the burn-in board 2.

  As described above, the heat radiation sheet 6 is attached to the portion corresponding to each burn-in socket 3 between the upper surface of the back surface protective metal plate 7 and the second main surface 2b (lower surface) of the burn-in board 2. . As described above, as the heat radiating sheet 6, for example, a heat conductive sheet (silicone rubber) TC-200TXE manufactured by Shin-Etsu Silicone is suitable. The dimensions are, for example, 15 mm in length and width, and the thickness is about 2 mm.

  As shown in FIG. 5, the heat-dissipating sheet 6 is interposed in the portion corresponding to each burn-in socket 3 between the upper surface of the back surface protective metal plate 7 and the second main surface 2b (lower surface) of the burn-in board 2. In this way, a direct heat radiation path comprising the device to be processed 1, the bump electrode 14, the burn-in board body 2, the heat radiation sheet 6, and the back surface protection metal plate 7 can be configured. Can be improved.

  The heat-dissipating sheet 6 between the back surface protection metal plate 7 of the section 2 and the burn-in board 2 is used alone for the burn-in board 2 using the socket / pitch conversion board 5 of the section 1 or burn-in with the socket / pitch conversion board 5. -You may apply together with the heat-radiation sheet 6 between the boards 2. FIG.

3. Summary The invention made by the present inventor has been specifically described based on the embodiments. However, the present invention is not limited thereto, and it goes without saying that various changes can be made without departing from the scope of the invention. .

  For example, in the above-described embodiment, the burn-in processing of the high-speed SRAM has been specifically described. However, the present invention is not limited thereto, and DRAM, flash memory, other memories, and SOC ( It goes without saying that the present invention can be widely applied to burn-in processing and the like of (System On Chip) type semiconductor integrated circuit devices, semiconductor integrated circuit devices for microcomputers, and semiconductor integrated circuit devices for logic or data processing.

1 is an overall cross-sectional view of a burn-in board used for burn-in processing in a method for manufacturing a semiconductor integrated circuit device according to an embodiment of the present application; FIG. 3 is a cross-sectional view of a principal part corresponding to a cross section of FIG. 3XX ′ of a unit portion (corresponding to an R portion in FIG. 1) of a burn-in board used for burn-in processing in the method of manufacturing a semiconductor integrated circuit device according to the embodiment of the present application; is there. It is a model back view of the socket pitch conversion board | substrate on the burn-in board used for the burn-in process in the manufacturing method of the semiconductor integrated circuit device of one embodiment of this application. It is a whole sectional view of the burn-in board used for the burn-in process in the manufacturing method of the semiconductor integrated circuit device of other embodiments of this application. FIG. 10 is a sectional view (corresponding to a portion R in FIG. 4) of a main part of a burn-in board used for burn-in processing in a method for manufacturing a semiconductor integrated circuit device according to another embodiment of the present application;

Explanation of symbols

1 Device to be processed 2 Burn-in board (or the main unit)
2a First main surface of burn-in board 2b Second main surface of burn-in board 3 Burn-in socket 4 Burn-in device 5 Socket pitch conversion board 5a Device surface of socket pitch conversion board 6 Heat radiation sheet (heat conduction insulating sheet) )
7 Back surface protection metal plate 9 Socket contact pin 10 Insulation frame of conversion board 11 Conversion board connection terminal (or conversion board connection terminal array area)
12 Insulation frame central recess 14 Bump electrode 15 Back surface protection metal plate reinforcement frame R Main unit area

Claims (6)

(A) preparing a semiconductor device;
(B) setting the semiconductor device in a socket installed on the first main surface of the test substrate;
(C) performing an electrical test of the semiconductor device by applying a voltage from the outside of the test substrate;
On the second main surface opposite to the first main surface of the test substrate , a plate-like metal member is disposed at a distance from the second main surface,
The external electrode of the semiconductor device is electrically connected to the test substrate via a contact pin disposed in the socket,
A heat radiating sheet is disposed between a portion of the second main surface of the test board corresponding to the socket and the metal member, and the heat radiating sheet is close to a lower end portion of the contact pin. A test method for a semiconductor device attached to the second main surface of a substrate and the metal plate.   2. The test method for a semiconductor device according to claim 1, wherein the contact pin of the socket is electrically connected to the test substrate by being inserted into the test substrate.   2. The test method for a semiconductor device according to claim 1, wherein the semiconductor device is a BGA type package, and the external electrode is a bump electrode.   2. The test method for a semiconductor device according to claim 1, wherein the semiconductor chip is an SRAM chip.   2. The method for testing a semiconductor device according to claim 1, wherein the step (c) is performed in a high temperature environment.   2. The test method for a semiconductor device according to claim 1, wherein the heat dissipation sheet is made of silicone rubber.

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