JP5567397B2 - Photomask manufacturing method, photomask and photomask manufacturing apparatus - Google Patents

Description

  The present invention relates to a photomask manufacturing method, a photomask manufactured using this method, and a photomask manufacturing apparatus.

  Conventionally, for manufacturing a photomask, a drawing apparatus that draws a pattern on a mask blank with a laser beam or an electron beam is used (see, for example, Patent Document 1).

  The drawing apparatus described in Patent Document 1 has a stage that can move in one direction (hereinafter referred to as the Y direction). Above the stage, a head unit for emitting laser light is provided so as to be movable in one direction perpendicular to the Y direction (hereinafter referred to as the X direction).

  Mask blanks are fixed on the stage. In this state, the laser beam is emitted toward the mask blank at a predetermined timing while the head portion moves in the X direction. Thereby, a pattern is drawn in a stripe-shaped region (hereinafter referred to as a stripe-shaped region) along the X direction on the mask blank.

  Next, when the stage moves along the Y direction, the position of the mask blank is shifted in the Y direction. In this state, the laser beam is emitted toward the mask blank at a predetermined timing while the head portion moves in the X direction as described above. Thereby, a pattern is drawn in another stripe region adjacent to the stripe region.

  Thus, every time drawing is performed in a stripe-shaped region along the X direction, drawing can be performed on the entire surface of the mask blank by shifting the position of the mask blank in the Y direction.

JP 2002-244272 A JP 2008-210850 A

  As described above, when a pattern is drawn on the mask blank for each stripe region, a gap is generated at the boundary between two adjacent stripe regions due to an error in the spread of the laser beam. In order to prevent this, a region that overlaps each other (hereinafter referred to as an overlapping region) is set at the boundary between adjacent stripe regions. However, it is difficult to make the exposure amount in the overlapping region equal to the exposure amount in other regions. Therefore, in the overlap region, a dimensional variation (dimensional error) of the exposed pattern occurs. In a device such as a liquid crystal display device or DRAM (Dynamic Random Access Memory), a portion such as a wiring that allows pattern variation in an overlapping region, a transistor formation portion of a liquid crystal display device, or a DRAM capacitor formation portion. In other words, there is a portion where pattern variation in the overlapping region is not allowed.

  Therefore, Patent Document 2 describes that drawing data is created so that an overlapping region is set in a portion where variation in the dimensions of a pattern is allowed in the device. The plurality of transistor forming portions of the liquid crystal display device and the plurality of capacitor forming portions of the DRAM are regularly arranged at a constant pitch in the device. Therefore, by making the width of the stripe region coincide with the pitch of the transistor formation portion or the capacitor formation portion, a plurality of overlapping regions can be set in a portion where the dimensional variation of the pattern is allowed. Thereby, it is possible to avoid the overlapping region from being located in a portion where variation in the dimension of the pattern is not allowed, such as a transistor formation portion or a capacitor formation portion.

  However, the plurality of portions in which the pattern variation in the overlapping region is not allowed are not necessarily arranged at a constant pitch in the entire region of the mask blank. Overlapping area to avoid all parts where pattern dimension variation is not allowed when part of multiple parts where pattern dimension variation is not allowed is not arranged at a constant pitch or at different pitches Is difficult to set.

  An object of the present invention is to provide a photomask manufacturing method capable of easily adjusting the position of an overlapping region of adjacent stripe-shaped regions to a desired position, a photomask manufactured using the method, and a photomask manufacturing method. Is to provide a device.

(1) The photomask manufacturing method according to the first invention extends in the first direction on the mask blank and crosses the first direction based on the drawing data corresponding to the drawing pattern to be drawn on the mask blank. A plurality of stripe regions having a width in the second direction and arranged in the second direction are sequentially patterned so that overlapping regions extending along the first direction are formed at the boundary portions of adjacent stripe regions. A method of manufacturing a photomask that performs drawing of a plurality of stripe regions, wherein the widths of some of the plurality of stripe regions are different from the widths of other stripe regions. and setting a pattern by moving in a first direction while sweep the laser beam in a substantially second direction in each stripe region Demarcating is intended to include a step.

  In this photomask manufacturing method, the position of the overlapping region extending in the first direction can be set in the second direction by arbitrarily setting the width of some of the stripe regions and the width of the other stripe regions. Can be easily adjusted to the position. Therefore, it is possible to easily avoid the overlapping region from being located in a portion having a small allowable dimensional accuracy in the drawing pattern.

  (2) The drawing pattern is arranged in a first regular region composed of a plurality of first unit regions arranged at a first pitch in the second direction and in the first regular region in the second direction. And the other stripe-shaped areas are arranged, and a part of the stripe-shaped area is a plurality of first stripe-shaped areas including the first regular area, and the other stripe-shaped area is another drawing area. One or a plurality of second stripe-shaped regions including at least a part of the region, and the setting step includes a pitch in the second direction of the plurality of overlapping regions formed when the first regular region is drawn The width of the plurality of first stripe regions is set to a constant width so that is an integer multiple of the first pitch, and the width of one or more second stripe regions is different from the constant width. Setting may be included.

  In this case, in the first regular region, each of the plurality of overlapping regions is arranged at the same position in any of the first unit regions. Therefore, the relative positional relationship between the plurality of overlapping regions and the plurality of first unit regions in which they are formed is equal. As a result, variation in characteristics of elements formed by the patterns of the plurality of first unit regions is reduced. In addition, when the relative positional relationship between the plurality of overlapping regions and the plurality of first unit regions in which they are formed is equal, the plurality of overlapping regions formed in the first regular region are visually recognized as uneven. Not.

  In addition, by setting the width of one or a plurality of second stripe regions to a width different from the constant width of the plurality of first stripe regions, the positions of the plurality of overlapping regions in the first regular region can be easily set. Can be adjusted.

  (3) Each first unit region includes a first pattern portion having an allowable dimension error smaller than other portions in the first unit region and other drawing regions. The width of one or a plurality of second stripe regions is set such that each overlapping region formed when drawing the regular region is not positioned in the first pattern portion of the first unit region. May be included.

  In this case, the first pattern portion is drawn with high dimensional accuracy. On the other hand, in other parts in the first unit area and other drawing areas, a dimensional error due to the overlapping area is allowed.

  As a result, the dimensional accuracy required for the entire drawing pattern can be satisfied, and the quality of the photomask can be sufficiently improved.

  (4) The width of the one or more second stripe regions may be larger than the width of the plurality of first stripe regions.

  In this case, the number of second stripe regions can be reduced. Thereby, the pattern drawing time can be shortened.

  (5) The drawing pattern is arranged at a first regular area composed of a plurality of first unit areas arranged at a first pitch in the second direction and at a first pitch in the second direction. A second regular region composed of a plurality of second unit regions, and another drawing region disposed between the first regular region and the second regular region in the second direction, The widths of the other drawing regions in the second direction are different from the integral multiple of the first pitch, and some of the stripe regions include a plurality of first stripe regions including the first regular regions and the second stripe regions. A plurality of second stripe regions including the regular region, and the other stripe region is one or a plurality of third stripe regions including at least a part of the other drawing region, and is set. Are formed at the time of drawing the first regular region. A plurality of second pitches such that a pitch in the second direction of the overlapping region and a pitch in the second direction of the plurality of overlapping regions formed when drawing the second regular region are an integral multiple of the first pitch. The widths of the first and second stripe regions may be set to a constant width, and the width of one or a plurality of third stripe regions may be set to a width different from the constant width.

  In this case, in the first regular region, each of the plurality of overlapping regions is arranged at the same position in any of the first unit regions. Further, in the second regular region, each of the plurality of overlapping regions is arranged at the same position of any second unit region. Therefore, the relative positional relationship between the plurality of overlapping regions and the plurality of first unit regions in which they are formed becomes equal, and the plurality of overlapping regions and the plurality of second unit regions in which they are formed The relative positional relationship becomes equal.

  As a result, variation in characteristics of elements formed by the patterns of the plurality of first and second unit regions is reduced. Also, the relative positional relationship between the plurality of overlapping regions and the plurality of first unit regions in which they are formed, and the relative position between the plurality of overlapping regions and the plurality of second unit regions in which they are formed When the relationship is equal, a plurality of overlapping regions formed in the first regular region and the second regular region are not visually recognized as unevenness.

  In addition, by setting the width of the one or more third stripe regions to a width different from the widths of the plurality of first and second stripe regions, the widths of the other drawing regions in the second direction are Even when it is different from an integral multiple of 1 pitch, the positions of the plurality of overlapping regions in the first or second regular region can be easily adjusted.

  (6) Each first unit area includes a first pattern portion having an allowable dimension error smaller than other portions in the first unit area and other drawing areas, and each second unit area includes Including a second pattern portion having an allowable dimension error smaller than that of the other portion in the second unit region and the other drawing region, and the step of setting is formed during the drawing of the first regular region. The plurality of overlapping areas formed are not positioned in the first pattern portions of the plurality of first unit areas, and the plurality of overlapping areas formed when drawing the second regular area are the plurality of second units. Setting the width of one or a plurality of third stripe regions so as not to be positioned in the second pattern portion of the region may be included.

  In this case, the first and second pattern portions are drawn with high dimensional accuracy. On the other hand, in other portions in the first and second unit regions and other drawing regions, dimensional errors due to overlapping regions are allowed.

  As a result, the dimensional accuracy required for the entire drawing pattern can be satisfied, and the quality of the photomask can be sufficiently improved.

  (7) The width of the one or more third stripe regions may be larger than the width of the plurality of first and second stripe regions.

  In this case, the number of third stripe regions can be reduced. Thereby, the pattern drawing time can be shortened.

  (8) The drawing pattern includes a first regular region composed of a plurality of first unit regions arranged at a first pitch in the second direction, and a second different from the first pitch in the second direction. A second regular region composed of a plurality of second unit regions arranged at a pitch of, and a part of the stripe region is a plurality of first stripe regions including the first regular region. And the other stripe-shaped region is a second stripe-shaped region including the second regular region, and the setting step includes the step of setting a plurality of overlapping regions formed when the first regular region is drawn. The pitch in the second direction is an integral multiple of the first pitch, and the pitch in the second direction of the plurality of overlapping regions formed when drawing the second regular region is an integral multiple of the second pitch. A plurality of first and second strikes to be It may include setting the width of Jo region, respectively.

  In this case, in the first regular region, each of the plurality of overlapping regions is arranged at the same position in any of the first unit regions. Further, in the second regular region, each of the plurality of overlapping regions is arranged at the same position of any second unit region. Therefore, the relative positional relationship between the plurality of overlapping regions and the plurality of first unit regions in which they are formed becomes equal, and the plurality of overlapping regions and the plurality of second unit regions in which they are formed The positional relationship becomes equal. As a result, variation in characteristics of elements formed by the patterns of the plurality of first and second unit regions is reduced. Further, when the relative positional relationship between the plurality of overlapping regions and the plurality of second unit regions in which they are formed is equal, the plurality of regions formed in the first regular region and the second regular region. The overlapping area is not visually recognized as unevenness.

  Further, by setting the widths of the plurality of first stripe regions and the widths of the plurality of second stripe regions to different widths, the first pitch of the plurality of first unit regions in the second direction Even when the second pitches of the plurality of second unit regions in the second direction are different, the positions of the plurality of overlapping regions in the first and second regular regions can be easily adjusted.

  (9) Each first unit region includes a first pattern portion having an allowable dimension error smaller than other portions in the first unit region and other drawing regions, and each second unit region includes Including a second pattern portion having an allowable dimension error smaller than that of the other portion in the second unit region and the other drawing region, and the step of setting is formed during the drawing of the first regular region. The plurality of overlapping areas formed are not positioned in the first pattern portions of the plurality of first unit areas, and the plurality of overlapping areas formed when drawing the second regular area are the plurality of second units. Setting the widths of the plurality of first stripe regions and the widths of the plurality of second stripe regions so as not to be positioned in the first pattern portion of the region may be included.

  In this case, the first and second pattern portions are drawn with high dimensional accuracy. On the other hand, in other portions in the first and second unit regions and other drawing regions, dimensional errors due to overlapping regions are allowed.

  As a result, the dimensional accuracy required for the entire drawing pattern can be satisfied, and the quality of the photomask can be sufficiently improved.

  (10) The drawing pattern includes a first regular region composed of a plurality of first unit regions arranged at a first pitch in the second direction, and the plurality of stripe-shaped regions are defined by the first regular region. A plurality of first stripe regions and a plurality of second stripe regions, and each of the plurality of first stripe regions and each of the plurality of second stripe regions includes Alternatingly arranged, some stripe regions are a plurality of first stripe regions, other stripe regions are a plurality of second stripe regions, and the setting step includes the steps of: Among a plurality of overlapping regions formed when drawing a regular region, the pitch of a pair of overlapping regions formed on both sides along the second direction of each first stripe region and each second region Second of the striped region The widths of the plurality of first and second stripe regions are set so that the sum of the pitches of the pair of overlapping regions formed on both sides along the direction is an integral multiple of the first pitch. May be included.

  In this case, in the first regular region, every other plurality of overlapping regions among the plurality of overlapping regions are arranged at the same position in the first unit region, and the remaining plurality of overlapping regions Each of the areas is arranged at the same position in the first unit area. Therefore, the relative positional relationship between every other plurality of overlapping regions and the plurality of first unit regions in which they are formed becomes equal, and the other plurality of other overlapping regions and those are formed. The relative positional relationship with the plurality of first unit regions becomes equal. As a result, variation in characteristics of elements formed by the patterns of the plurality of first unit regions is reduced. Further, the relative positional relationship between every other plurality of overlapping areas and the plurality of first unit areas in which they are formed is the same, and every other plurality of overlapping areas and the plurality of them where they are formed. When the relative positional relationship with the first unit region is equal, a plurality of overlapping regions formed in the first regular region are not visually recognized as unevenness.

  In addition, by setting the widths of the plurality of first stripe regions and the widths of the plurality of second stripe regions to be different, the positions of the plurality of overlapping regions in the first regular region can be easily adjusted. can do.

  Furthermore, the drawing time can be shortened by setting one of the widths of the first stripe regions and the widths of the second stripe regions to the maximum width.

  (11) Each first unit region includes a first pattern portion having an allowable dimension error smaller than other portions in the first unit region and other drawing regions. The widths of the plurality of first stripe regions and the plurality of first regions are arranged so that the plurality of overlapping regions formed when the regular region is drawn are not positioned in the first pattern portions of the plurality of first unit regions. It may include setting the widths of the two stripe regions.

  In this case, the first pattern portion is drawn with high dimensional accuracy. On the other hand, in other parts in the first unit area and other drawing areas, a dimensional error due to the overlapping area is allowed.

  As a result, the dimensional accuracy required for the entire drawing pattern can be satisfied, and the quality of the photomask can be sufficiently improved.

  (12) A photomask according to the second invention is manufactured by the method for manufacturing a photomask according to the first invention.

  In the photomask manufactured by the above-described manufacturing method, the position of the overlapping region extending in the first direction can be adjusted by arbitrarily setting the width of some stripe regions and the width of other stripe regions. It is easily adjusted to a desired position in the two directions. Therefore, it is easily avoided that the overlapping region is located in a portion having a small allowable dimensional accuracy in the drawing pattern. As a result, the exposure pattern using this photomask can improve the dimensional accuracy of the exposure pattern.

Based on the drawing data corresponding to the drawing pattern to be drawn on the mask blank, it has a width in the second direction that extends in the first direction on the mask blank and intersects the first direction, and is arranged in the second direction. An apparatus for manufacturing a photomask for sequentially drawing a pattern so that an overlapping region extending along a first direction is formed at a boundary portion between adjacent stripe-shaped regions in a plurality of stripe-shaped regions. Setting means for setting the width of each of the plurality of stripe-shaped regions so that the width of some of the stripe-shaped regions is different from the width of the other stripe-shaped regions, and the widths set by the setting means. look contains a drawing means for drawing in sequence a plurality of stripe regions, rendering means, while sweep a laser beam to substantially a second direction the first It is intended to draw a pattern on each stripe region by moving in a direction.

  In this photomask manufacturing apparatus, the position of the overlapping region extending in the first direction can be determined in the second direction by arbitrarily setting the widths of some of the stripe regions and the widths of the other stripe regions. Can be easily adjusted to the position. Therefore, it is possible to easily avoid the overlapping region from being located in a portion having a small allowable dimensional accuracy in the drawing pattern.

  According to the present invention, it is possible to easily adjust the position of an overlapping region between adjacent stripe regions to a desired position.

It is a schematic diagram which shows the structure of the drawing apparatus used when drawing a pattern on mask blanks. It is a schematic plan view for demonstrating the outline | summary of operation | movement of a drawing apparatus. It is a schematic plan view for demonstrating the outline | summary of operation | movement of a drawing apparatus. It is a schematic plan view for demonstrating the outline | summary of operation | movement of a drawing apparatus. It is a figure for demonstrating the sweep of a laser beam. It is a schematic plan view which shows an example of a unit area. It is a schematic plan view which shows a part of regular area | region set to mask blanks. It is a figure for demonstrating the 1st example of a setting of the width | variety of several striped area | regions. It is a figure for demonstrating the 2nd example of a setting of the width | variety of several striped area | region. It is a figure for demonstrating the 3rd example of a setting of the width | variety of several striped area | region. It is a figure for demonstrating the 4th example of a setting of the width | variety of several striped area | region.

  Hereinafter, a photomask manufacturing method, a photomask and a photomask manufacturing apparatus according to an embodiment of the present invention will be described with reference to the drawings. The photomask according to the present embodiment is manufactured by emitting laser light to a mask blank and drawing a pattern. In the following description, a photomask used for manufacturing a thin film transistor (TFT) array substrate provided in a liquid crystal display device will be described as an example of a photomask. Further, a drawing apparatus for drawing a pattern on a mask blank will be described as an example of a photomask manufacturing apparatus.

(1) Configuration of Drawing Device FIG. 1 is a schematic diagram showing a configuration of a drawing device used when drawing a pattern on a mask blank. In the drawings after FIG. 1, two directions orthogonal to each other in the horizontal plane are defined as an X direction and a Y direction.

  As shown in FIG. 1, the drawing apparatus 100 includes a stage 20, a stage driving unit 30, a carriage 40, a head unit 50, a laser light generation unit 60, a control unit 70, an on / off switching unit 80, and a data input unit 90.

  Mask blanks 10 are fixed on the stage 20. The stage 20 is moved along the Y direction by the stage driving unit 30.

  A carriage 40 is provided above the stage 20 along the X direction. A head unit 50 is attached to the carriage 40. The head unit 50 is configured to be movable in the X direction along the carriage 40.

  The laser light generator 60 generates laser light. The laser light generated by the laser light generation unit 60 is guided to the head unit 50 through the on / off switching unit 80 and is emitted from the head unit 50 toward the mask blank 10 on the stage 20. The on / off switching unit 80 switches on / off of laser light emission.

  The data input unit 90 is configured to be operable by a user. In the data input unit 90, for example, information on a pattern to be drawn on the mask blank 10 (hereinafter referred to as pattern information), and information for setting a plurality of stripe-shaped regions (to be described later) on the mask blank 10 (hereinafter referred to as “pattern information”). Called area information). The input pattern information and area information are given to the control unit 70.

  The control unit 70 creates drawing data of a pattern to be drawn on the mask blank 10 based on the pattern information and area information given from the data input unit 90, and the stage driving unit 30 and the head based on the created drawing data. Unit 50 and on / off switching unit 80 are controlled.

  In the head unit 50, the emission direction of the laser beam generated by the laser beam generation unit 60 is repeatedly changed in a direction intersecting the X direction at a constant period. Thereby, on the mask blank 10, the position where the laser beam is to be irradiated repeatedly moves in the Y direction at a constant cycle.

  In the following description, the position where the laser beam should be irradiated on the mask blank 10 is referred to as a laser beam aiming position. In addition, the movement of the laser beam aiming position due to a change in the laser beam emission direction is referred to as laser beam sweep. The laser beam sweep will be described later.

(2) Outline of Operation of Drawing Apparatus Next, an outline of operation of the drawing apparatus 100 shown in FIG. 1 will be described. 2 to 4 are schematic plan views for explaining the outline of the operation of the drawing apparatus 100. Here, in order to facilitate understanding of the overall operation of the drawing apparatus 100, description of the laser beam sweep is omitted.

  First, as shown in FIG. 2A, the position of the stage 20 is adjusted so that the end of the mask blank 10 is positioned below the head 50 with the head 50 located at one end of the carriage 40. Is done. Subsequently, as shown in FIG. 2B, the head unit 50 emits laser light toward the mask blank 10 at a predetermined timing while moving from one end of the carriage 40 to the other end. As a result, a pattern is drawn in the stripe region S1 on the mask blank 10 along the X direction.

  Subsequently, as shown in FIG. 3A, the head unit 50 returns to one end of the carriage 40 in a state where the emission of the laser beam is stopped, and the stage 20 moves in the Y direction.

  Next, as shown in FIG. 3B, the head unit 50 emits laser light toward the mask blank 10 at a predetermined timing while moving again from one end of the carriage 40 to the other end. As a result, the pattern is drawn in the stripe region S1 on the mask blank 10 adjacent to the stripe region S1.

  In this way, a pattern is drawn for each stripe region S1. Finally, as shown in FIG. 4, drawing is performed on the entire surface of the mask blanks 10 (a plurality of stripe-shaped regions S1). The photomask 11 according to the present embodiment is completed by performing development processing and etching processing of the mask blank 10 on which the pattern is drawn on the entire surface.

  In the data input unit 90 of FIG. 1, information regarding the widths of the plurality of stripe-shaped regions S1 in the Y direction can be individually input as region information. Therefore, when the widths in the Y direction of the plurality of stripe regions S1 are different from each other, the amount of movement of the stage 20 that moves in the Y direction changes every time a pattern is drawn in the stripe region S1.

  In the present embodiment, two adjacent stripe regions S1 are set on the mask blank 10 so that a part of them overlaps each other. In the following description, a region where two adjacent stripe regions S1 overlap is referred to as an overlapping region.

  In the drawing apparatus 100, the region information related to the plurality of stripe regions S1 is individually input to the data input unit 90, so that the overlapping region S1 can be easily adjusted so as to deviate from the position of the specific pattern. It is. Details will be described later.

(3) Laser Light Sweep and Overlapping Area Laser light sweep will be described. FIG. 5 is a diagram for explaining the sweep of the laser beam. In FIG. 5, the case where a pattern is drawn on two adjacent stripe-like regions S1 will be described.

  As described above, the irradiation position of the laser light emitted from the head unit 50 in FIG. 1 repeatedly moves in the Y direction at a predetermined cycle. That is, the laser beam sweeps in the Y direction.

  Specifically, as indicated by an arrow a in FIG. 5, the laser beam aiming position PT moves along the Y direction by a predetermined length (hereinafter referred to as a sweep length). In this case, an area (hereinafter referred to as an aiming movement area) Rx in which the laser beam aiming position PT moves has a sweep length in the Y direction and a laser beam diameter Do in the X direction. The sweep length is set corresponding to each stripe-shaped region S1. The sweep length is equal to the width ws1 in the Y direction of the corresponding stripe region S1.

  As indicated by an arrow b in FIG. 5, the aiming position PT of the laser light moves at a constant period, and the head portion 50 (FIG. 1) moves in the X direction, so that the aiming movement region Rx gradually moves in the X direction. Sneak away. As a result, the laser beam aiming position PT moves to the entire stripe region S1.

  When the position where the pattern is to be drawn (exposure position) and the laser beam aiming position PT overlap, the on / off switching section 80 (FIG. 1) turns on the emission of the laser light. As a result, a desired pattern can be drawn in the stripe region S1.

  As described above, when a pattern is drawn on the mask blank 10 for each stripe region S1, there is a gap at the boundary between the two adjacent stripe regions S1 due to an error in the spread of the laser beam. Occur. In order to prevent the occurrence of such a gap, an overlapping region OV that overlaps each other is set at a boundary portion between two adjacent stripe regions S1. The width wov in the Y direction of the overlapping region OV is sufficiently smaller than the width ws1 in the Y direction of the stripe region S1, and is preset in the control unit 70 of FIG.

  The stage 20 (FIG. 1) is obtained by subtracting the width wov of the overlap region OV from the width ws1 in the Y direction of the stripe region S1 by moving the laser beam aiming position PT to the entire one of the stripe regions S1. Move in the Y direction.

  Subsequently, similarly to the one stripe region S1, a pattern is drawn in the stripe region S1 adjacent to the one stripe region S1. In this case, in the overlapping area OV, the position of the pattern once exposed is irradiated with the laser light again. As described above, since the overlapping region OV is irradiated with the laser beam in an overlapping manner, it is difficult to make the exposure amount in the overlapping region OV equal to the exposure amount in other regions. Therefore, in the overlapping area OV, a dimensional error of the exposed pattern occurs. In the present embodiment, the dimension error refers to a deviation between a predetermined pattern dimension (design dimension) and a pattern dimension actually drawn on the mask blank 10.

(4) Adjustment of Overlapping Area Position As described above, the photomask 11 according to the present embodiment is used for manufacturing a TFT array substrate provided in a liquid crystal display device. The TFT array substrate has a configuration in which circuits (hereinafter referred to as unit circuits) corresponding to one pixel of a liquid crystal display device are regularly arranged at a constant pitch.

  In the following description, an area of a pattern drawn on the mask blank 10 for forming each unit circuit of the TFT array substrate is referred to as a unit area. In a pattern region drawn on the mask blank 10 corresponding to one TFT array substrate, a plurality of unit regions are arranged so as to be aligned in the X direction and the Y direction. In the following description, an area of a pattern drawn on the mask blank 10 corresponding to one TFT array substrate is referred to as a regular area.

  FIG. 6 is a schematic plan view showing an example of the unit region. As shown in FIG. 6, the unit region UR1 has a rectangular shape and includes a first portion R, a second portion G, and a third portion B. The first to third portions R, G, B each have a rectangular shape and are arranged on the mask blank 10 so as to be aligned in the X direction.

  The first to third portions R, G, and B each include a TFT formation portion T for forming a TFT. In the example of FIG. 6, the TFT forming portion T is located in the vicinity of one end portion of the first to third portions R, G, and B in the Y direction.

  In the present embodiment, a dimensional error (allowable dimensional accuracy) allowed in the TFT forming portion T is a dimensional error (allowable dimension) allowed in a region other than the unit region UR1 and the regular region in the mask blank 10. Accuracy).

  Therefore, in the present embodiment, as shown in FIG. 6, the position of the overlapping region OV is adjusted so as not to be located in the TFT forming portion T where the allowable dimensional accuracy of the pattern is small.

  An example of adjusting the position of the overlapping area OV will be described. FIG. 7 is a schematic plan view showing a part of a regular region set in the mask blank 10. In the following description, the length in the Y direction of the unit region UR1 drawn on the mask blank 10 is referred to as a unit length.

  In FIG. 7, three stripe regions S <b> 1 including regular regions are indicated by thick dashed lines. In the regular region RR1, for example, the width WS1 in the Y direction of the plurality of stripe regions S1 is an integer of the unit length of the unit region UR1 so that the positions of the plurality of overlapping regions OV are not located in the TFT formation portion T. It is set to a value obtained by adding the width wov of the overlapping area OV to the doubled value (twice in this example).

  As a result, a plurality of overlapping areas OV can be arranged in the Y direction at a pitch pov that is an integral multiple of the unit length of unit area UR1 (twice in this example). In this case, since the TFT forming portions T are arranged in the Y direction at a unit length pitch p1, by shifting the positions of the plurality of overlapping regions OV in the Y direction from the TFT forming portions T, the TFT forming portions T are moved to the overlapping regions. Positioning of OV can be avoided.

  In this case, the plurality of overlapping regions OV are arranged in the Y direction at a pitch pov that is an integral multiple of the unit length of the unit region UR1 (twice in this example), so that the plurality of overlapping regions OV and the unit region UR1 are relative to each other. The positional relationship does not vary. That is, the plurality of overlapping regions OV are set at a certain position in the unit region UR1 (in this example, the central portion of the unit region UR1 in the Y direction).

  When the plurality of overlapping regions OV are set so as to be arranged at a pitch shifted from an integral multiple of the pitch p1 of the unit regions UR1 with respect to the unit regions UR1 regularly arranged at a constant pitch p1, a plurality of overlapping regions OV are set. Variations occur in the relative positional relationship between the overlapping region OV and the unit region UR1. When a pattern is drawn on the mask blank 10 in this state, unevenness is visually recognized on the produced photomask 11.

  Therefore, the width WS1 in the Y direction of the plurality of striped regions S1 is set based on the pitch p1 of the unit regions UR1. As a result, it is easy to avoid the overlapping region OV from being located in the TFT forming portion T having a small allowable dimensional accuracy, and the relative positional relationship between the plurality of overlapping regions OV and the unit region UR1 may vary. Can be prevented.

(5) First Setting Example of Width of Striped Region FIG. 8 is a diagram for explaining a first setting example of the width in the Y direction of a plurality of striped regions. In FIG. 8, an example of a pattern drawn on one mask blank 10 is shown in a plan view. A pattern drawn on the mask blank 10 is indicated by a dotted line. The mask blank 10 has a pair of short sides and a pair of long sides.

  In this mask blank 10, a range surrounded by the alternate long and short dash line is a pattern drawing portion 10 a by the drawing apparatus 100. The drawable portion 10a also has a pair of short sides and a pair of long sides. When drawing a pattern, a sweep is performed on the entire surface of the drawable portion 10a. Hereinafter, a pattern to be drawn in the drawable portion 10a is referred to as a drawing pattern.

  In the mask blank 10, two regular regions RR <b> 1 having a rectangular shape are arranged so as to be arranged in the Y direction at a predetermined interval. An end region A1 is provided between one short side of the drawable portion 10a and the regular region RR1. An intermediate region A2 is provided between the two regular regions RR1. An end region A3 is provided between the other short side and the regular region RR1.

  In this example, the interval between the two regular regions RR1 in the Y direction (the width of the intermediate region A2) is twice the pitch p1 of the plurality of unit regions UR1. Each of the two regular regions RR1 includes a plurality of unit regions UR1 and a wiring pattern WP.

  A rectangular mark pattern MP1 is drawn in each of the end regions A1 and A3. A plurality of mark patterns MP2 are drawn in the end areas A1, A3 and the intermediate area A2. Each of the plurality of mark patterns MP2 has a cross shape.

  These mark patterns MP1 and MP2 are, for example, alignment marks formed on the photomask 11 for alignment and inspection marks formed on the photomask 11 for inspecting the dimensional accuracy of the pattern.

  As described above, the TFT forming portion T (FIGS. 6 and 7) has a small allowable dimensional accuracy. On the other hand, the mark patterns MP1 and MP2 have an allowable dimensional accuracy that is sufficiently larger than the allowable dimensional accuracy of the TFT forming portion T. Therefore, in the mark patterns MP1 and MP2, a dimensional error that occurs in the overlapping region OV is allowed.

  In this case, as shown in FIG. 8, in the regular region RR1, a plurality of unit regions UR1 are arranged at a pitch p1. The width ws1 of the plurality of stripe-shaped regions S1 including the regular region RR1 is a constant width so that the pitch pov of the plurality of overlapping regions OV formed when drawing the regular region RR1 is an integral multiple of the pitch p1. Set to

  Further, the width ws2 of the stripe region S2 of the end regions A1 and A3 can be set to an arbitrary width different from the width ws1 of the stripe region S1.

  Thereby, in the regular region RR1, each of the plurality of overlapping regions OV is arranged at the same position of any unit region UR1. Therefore, the relative positional relationship between the plurality of overlapping regions OV and the plurality of unit regions UR1 in which they are formed becomes equal. As a result, variations in characteristics of pixels formed by the patterns of the plurality of unit regions UR1 are reduced. In addition, when the relative positional relationship between the plurality of overlapping regions OV and the plurality of unit regions UR1 in which they are formed is equal, the plurality of overlapping regions OV formed in the regular region RR1 are not visually recognized as uneven.

  Further, by setting the width of the stripe region S2 in the end regions A1 and A3 to a width ws2 different from the width ws1 of the stripe region S1, the positions of the plurality of overlapping regions OV in the regular region RR1 are easily adjusted. be able to.

  It is possible to easily adjust the position of the OV so that each overlapping region OV formed when drawing the regular region RR1 is not located in the TFT forming portion T (FIGS. 6 and 7) having a small allowable dimensional error. it can. Thereby, the TFT forming portion T is drawn with high dimensional accuracy.

On the other hand, the other portions in the unit region UR1, the end regions A1 and A3, and the intermediate region A2 have a larger allowable dimensional error than the TFT forming portion T. Therefore, in these other portions, the end regions A1 and A3, and the intermediate region A2, a dimensional error due to the overlapping region OV is allowed.

  As a result, the dimensional accuracy required for the entire drawing pattern in the drawable portion 10a can be satisfied, and the quality of the photomask 11 can be sufficiently improved.

  Furthermore, when the width ws2 of the stripe region S2 is set to the maximum sweep length (the maximum value of the sweep length that can be adjusted by the head unit 50 in FIG. 2) larger than the width ws1 of the plurality of stripe regions S1, The number of stripe regions S2 can be reduced. Thereby, the drawing time of a drawing pattern can be shortened.

(6) Second Setting Example of Width of Striped Region The difference between the second setting example of the width of the striped region and the first setting example will be described. FIG. 9 is a diagram for explaining a second setting example of widths of a plurality of stripe-shaped regions. In FIG. 9, similarly to the example of FIG. 8, an example of a pattern drawn on one mask blank 10 is shown in a plan view.

  In this example, the interval between the two regular regions RR1 in the Y direction (the width of the intermediate region A2) is different from an integer multiple of the pitch p1 of the plurality of unit regions UR1.

  In the two regular regions RR1, a plurality of unit regions UR1 are arranged at a pitch p1. The width ws1 of the plurality of striped regions S1 including the two regular regions RR1 so that the pitch pov of the plurality of overlapping regions OV formed when drawing the two regular regions RR1 is an integral multiple of the pitch p1. Is set to a constant width. Further, the width ws3 of the stripe region S3 in the intermediate region A2 can be set to an arbitrary width different from the width sw1 of the plurality of stripe regions S1.

  Thereby, in the two regular regions RR1, each of the plurality of overlapping regions OV is arranged at the same position in any one of the unit regions UR1. Therefore, the relative positional relationship between the plurality of overlapping regions OV and the plurality of unit regions UR1 in which they are formed becomes equal.

  As a result, variations in characteristics of pixels formed by the patterns of the plurality of unit regions UR1 are reduced. Further, when the relative positional relationship between the plurality of overlapping regions OV and the plurality of unit regions UR1 in which they are formed is equal, the plurality of overlapping regions OV formed in the two regular regions RR1 are visually recognized as uneven. Not.

  Further, by setting the width ws3 of the stripe region S3 in the intermediate region A2 to be different from the width ws1 of the plurality of stripe regions S1, the width of the intermediate region A2 is an integral multiple of the pitch p1 as in this example. Even if they are different, the positions of the plurality of overlapping regions OV in the two regular regions RR1 can be easily adjusted.

  Therefore, the position of the overlapping region OV can be easily set so that each overlapping region OV formed when drawing the regular region RR1 is not located in the TFT forming portion T (FIGS. 6 and 7) having a small allowable dimensional error. Can be adjusted. Thereby, the TFT forming portion T is drawn with high dimensional accuracy.

  On the other hand, other portions in the unit region UR1, the intermediate region A2, and the end regions A1 and A3 have a larger allowable dimensional error than the TFT forming portion T (FIGS. 6 and 7). Accordingly, in these other portions, the intermediate region A2 and the end regions A1 and A3, a dimensional error due to the overlapping region OV is allowed.

  As a result, the dimensional accuracy required for the entire drawing pattern in the drawable portion 10a can be satisfied, and the quality of the photomask 11 can be sufficiently improved.

  Further, when the width ws3 of the stripe region S3 is set to the maximum sweep length (the maximum value of the sweep length that can be adjusted by the head unit 50 in FIG. 2) larger than the width ws1 of the plurality of stripe regions S1, the stripes The number of the like regions S3 can be reduced. Thereby, the drawing time of a drawing pattern can be shortened.

(7) Third Setting Example of Width of Striped Region A third setting example of the width of the striped region will be described with respect to differences from the second setting example. FIG. 10 is a diagram for explaining a third setting example of the widths of a plurality of stripe regions. In FIG. 10, similarly to the example of FIG. 9, an example of a pattern drawn on one mask blank 10 is shown in a plan view.

  In this example, two regular regions RR1 and RR2 having different sizes are arranged on the mask blank 10. One regular region RR1 is larger than the other regular region RR2. The unit region UR1 included in one regular region RR1 is also larger than the unit region UR2 included in the other regular region RR2. Thereby, in one regular region RR1, a plurality of unit regions UR1 are arranged at a pitch p1, and in the other regular region RR2, a plurality of unit regions UR2 are arranged at a pitch p2 smaller than the pitch p1.

  The width ws1 of the plurality of striped regions S1 including the regular region RR1 is set so that the pitch pov of the plurality of overlapping regions OV formed when drawing the regular region RR1 is an integral multiple of the pitch p1. .

  In addition, the plurality of stripe regions S4 including the regular region RR2 are arranged such that the pitch pov of the plurality of overlapping regions OV formed when the regular region RR2 is drawn is an integral multiple of the pitch p2 different from the pitch p1. A width ws4 is set.

  Thereby, in the regular region RR1, each of the overlapping regions OV is arranged at the same position of any unit region UR1. Further, also in the regular region RR2, each of the plurality of overlapping regions OV is arranged at the same position of any unit region UR2. Accordingly, the relative positional relationship between the plurality of overlapping regions OV and the plurality of unit regions UR1 in which they are formed becomes equal, and the positional relationship between the plurality of overlapping regions OV and the plurality of unit regions UR2 in which they are formed. Are equal.

  As a result, variation in characteristics of pixels formed by the patterns of the plurality of unit regions UR1 and UR2 is reduced. When the relative positional relationship between the plurality of overlapping regions OV and the plurality of unit regions UR1 and UR2 in which they are formed is equal, the plurality of overlapping regions OV formed in the regular regions RR1 and RR2 It is not visually recognized as unevenness.

  In addition, by setting the width ws1 of the plurality of stripe regions S1 including the regular region RR1 and the width ws4 of the plurality of stripe regions S4 including the regular region RR2 to different widths, Even when the pitch p1 of the unit region UR1 and the pitch p2 of the unit region UR2 are different, the positions of the plurality of overlapping regions OV in the regular regions RR1 and RR2 can be easily adjusted.

  Therefore, the position of the overlapping region OV is set so that the overlapping regions OV formed when the regular regions RR1 and RR2 are drawn are not positioned in the TFT forming portion T (FIGS. 6 and 7) having a small allowable dimensional error. It can be adjusted easily. Thereby, the TFT forming portion T is drawn with high dimensional accuracy.

  On the other hand, other portions in the unit regions UR1 and UR2, the intermediate region A2 and the end regions A1 and A3 have a larger allowable dimensional error than the TFT forming portion T (FIGS. 6 and 7). Accordingly, in these other portions, the intermediate region A2 and the end regions A1 and A3, a dimensional error due to the overlapping region OV is allowed.

  As a result, the dimensional accuracy required for the entire drawing pattern in the drawable portion 10a can be satisfied, and the quality of the photomask 11 can be sufficiently improved.

(8) Fourth Setting Example of Striped Region Width A difference between the fourth setting example of the width of the striped region and the first setting example will be described. FIG. 11 is a diagram for explaining a fourth setting example of the widths of a plurality of stripe-shaped regions. In FIG. 11, a part of a pattern drawn on one mask blank 10 (mainly, one regular region RR1, end region A1, and intermediate region A2 in FIG. 8) is shown in a plan view. Yes.

  As shown in FIG. 11, in this example, the pattern drawn on the mask blanks 10 is the same as in the first setting example, but two types having different widths ws5 and ws6 in the region including the regular region RR1. Stripe regions S5 and S6 are alternately arranged. The widths ws5 and ws6 of the stripe regions S5 and S6 are set as follows.

  In the regular region RR1, a plurality of unit regions UR1 are arranged at a pitch p1. Of the plurality of overlapping regions OV formed when the regular region RR1 is drawn, the pitch pov of the pair of overlapping regions OV formed on both sides along the Y direction of each striped region S5 and each striped region The widths ws5 and ws6 of the plurality of striped regions S5 and S6 are set so that the sum of the pitch pov of the pair of overlapping regions OV formed on both sides along the Y direction of S6 is an integral multiple of the pitch p1. Is set.

  That is, in the regular region RR1, the pitch pova in the Y direction of every other plurality of overlapping regions OV1 among the plurality of overlapping regions is an integral multiple of the pitch p1, and the remaining plurality of overlapping regions OV2 The pitch povb in the Y direction is an integral multiple of the pitch p1.

  Thereby, in the regular region RR1, every other plurality of overlapping regions OV1 among the plurality of overlapping regions are arranged at the same position in the unit region UR1, and the remaining plurality of overlapping regions OV2 Each is arranged at the same position in the unit region UR1.

  Therefore, the relative positional relationship between every other plurality of overlapping regions OV1 and the plurality of unit regions UR1 in which they are formed becomes equal, and each other overlapping region OV2 is formed with every other overlapping region OV1. The relative positional relationship with the plurality of unit regions UR1 becomes equal. As a result, variations in characteristics of pixels formed by the patterns of the plurality of unit regions UR1 are reduced. Further, every other plurality of overlapping regions OV1 and the plurality of unit regions UR1 in which they are formed have the same relative positional relationship, and every other plurality of overlapping regions OV2 and a plurality of which are formed. When the relative positional relationship with the unit region UR1 is equal, the plurality of overlapping regions OV1 and OV2 formed in the regular region RR1 are not visually recognized as unevenness.

  Furthermore, by setting the width ws5 of the plurality of stripe regions S5 and the width ws6 of the plurality of stripe regions S6 to be different, the positions of the plurality of overlapping regions OV1 and OV2 in the regular region RR1 are easily adjusted. be able to.

  Further, drawing is performed by setting one of the width ws5 of each stripe region S5 or the width ws6 of each stripe region S6 to the maximum sweep length (the maximum value of the sweep length that can be adjusted by the head unit 50 in FIG. 2). It is also possible to shorten the time.

  As described above, by setting the width ws5 of the plurality of stripe regions S5 and the width ws6 of the plurality of stripe regions S6 to be different, the positions of the plurality of overlapping regions OV1 and OV2 in the regular region RR1 can be easily set. Can be adjusted.

  Accordingly, the positions of the overlapping regions OV1 and OV2 are set so that each overlapping region OV formed when the regular region RR1 is drawn is not located in the TFT forming portion T (FIGS. 6 and 7) having a small allowable dimensional error. It can be adjusted easily. Thereby, the TFT forming portion T is drawn with high dimensional accuracy.

  On the other hand, other portions in the unit regions UR1 and UR2, the intermediate region A2 and the end regions A1 and A3 have a larger allowable dimensional error than the TFT forming portion T (FIGS. 6 and 7). Accordingly, in these other portions, the intermediate region A2 and the end regions A1 and A3, a dimensional error due to the overlapping region OV is allowed.

  As a result, the dimensional accuracy required for the entire drawing pattern in the drawable portion 10a can be satisfied, and the quality of the photomask 11 can be sufficiently improved.

(9) Others In the above description, the example in which the width wov in the Y direction of the overlapping region OV has been determined in advance by the control unit 70 in FIG. 1 is described, but the width wov in the Y direction of the overlapping region OV (FIG. 5) Each may be set to an arbitrary value.

  In the above, the example of the TFT forming portion T drawn on the mask blank 10 to form a TFT as a pattern having a small allowable dimensional accuracy has been described. An example is a capacitor forming portion of a DRAM (dynamic random access memory) to be drawn.

(10) Correspondence between each component of claim and each part of embodiment The following describes an example of a correspondence between each component of the claim and each part of the embodiment. It is not limited.

  In the above embodiment, the X direction is an example of the first direction, the Y direction is an example of the second direction, the drawing apparatus 100 is an example of a photomask manufacturing apparatus, the control unit 70 and the data The input unit 90 is an example of a setting unit, and the stage 20, the stage driving unit 30, the carriage 40, the head unit 50, the laser light generation unit 60, and the on / off switching unit 80 are examples of a drawing unit.

  The first setting example of the width of the stripe region is an example of the photomask manufacturing method according to claims 1, 2, 3 and 4, and the second setting example of the width of the stripe region is claimed. An example of a photomask manufacturing method according to any one of claims 1, 5, 6 and 7, and a third setting example of the width of the stripe region is an example of a photomask manufacturing method according to claims 1, 8, and 9. A fourth setting example of the width of the stripe region is an example of the photomask manufacturing method according to claims 1, 10, and 11.

  As each constituent element in the claims, various other elements having configurations or functions described in the claims can be used.

  The present invention can be effectively used for manufacturing a photomask.

DESCRIPTION OF SYMBOLS 10 Mask blank 11 Photomask 20 Stage 30 Stage drive part 40 Carriage 50 Head part 60 Laser beam generation part 70 Control part 80 On-off switching part 90 Data input part 100 Drawing apparatus A1, A3 End area A2 Intermediate area B 3rd part Do beam diameter G Second part MP1, MP2 Mark pattern OV, OV1, OV2 Overlapping area p1, p2, pov, pova, povb Pitch PT Aiming position R First part Rx Aiming movement area RR1, RR2 Regular area S1, S2, S3, S4, S5, S6 Striped area T TFT formation part UR1, UR2 Unit area WP Wiring pattern ws1, ws2, ws3, ws4, ws5, ws6, wov width

Claims (13)

Based on the drawing data corresponding to the drawing pattern to be drawn on the mask blank, the second direction extends in the first direction on the mask blank and has a width in the second direction intersecting the first direction. A plurality of stripe regions arranged in a photomask manufacturing method for drawing a pattern in order so that an overlapping region extending along the first direction is formed at a boundary portion between adjacent stripe regions,
Setting the width of each of the plurality of stripe regions such that the width of some of the plurality of stripe regions is different from the width of other stripe regions ;
And a step of drawing a pattern by moving the laser beam in the first direction while sweeping the laser beam in a substantially second direction in each stripe region . The drawing pattern includes a first regular region composed of a plurality of first unit regions arranged at a first pitch in the second direction, and a first regular region in the second direction. Including other drawing areas arranged side by side,
The partial stripe region is a plurality of first stripe regions including the first regular region, and the other stripe region includes at least a part of the other drawing region. A plurality of second stripe regions,
In the setting step, the plurality of second regions are arranged such that a pitch in the second direction of the plurality of overlapping regions formed when the first regular region is drawn is an integral multiple of the first pitch. The width of one stripe region is set to a constant width, and the width of the one or more second stripe regions is set to a width different from the constant width. A method for producing a photomask according to 1. Each first unit region includes a first pattern portion having an allowable dimension error smaller than that of the other portion in the first unit region and the other drawing region,
In the setting step, the one or more second regions may be arranged such that each overlapping region formed when the first regular region is drawn is not positioned in the first pattern portion of the first unit region. 3. The method of manufacturing a photomask according to claim 2, further comprising setting a width of the stripe region. 4. The method of manufacturing a photomask according to claim 2, wherein a width of the one or more second stripe regions is larger than a width of the plurality of first stripe regions. The drawing pattern is arranged at a first regular area composed of a plurality of first unit areas arranged at a first pitch in the second direction, and at the first pitch in the second direction. A second regular region comprising a plurality of second unit regions, and another drawing region arranged between the first regular region and the second regular region in the second direction And the width of the other drawing area in the second direction is different from an integer multiple of the first pitch,
The partial stripe regions are a plurality of first stripe regions including the first regular region and a plurality of second stripe regions including the second regular region, The stripe region is one or a plurality of third stripe regions including at least a part of the other drawing region,
The setting step includes a pitch in the second direction of a plurality of overlapping areas formed when drawing the first regular area and a plurality of areas formed when drawing the second regular area. A width of the plurality of first and second stripe regions is set to a constant width so that a pitch of the overlapping region in the second direction is an integral multiple of the first pitch, and the one or 2. The method of manufacturing a photomask according to claim 1, further comprising setting a width of the plurality of third stripe-shaped regions to a width different from the constant width. Each first unit region includes a first pattern portion having a smaller allowable dimension error than the other portion in the first unit region and the other drawing region, and each second unit region includes A second pattern portion having an allowable dimension error smaller than other portions in the second unit region and the other drawing region,
In the setting step, the plurality of overlapping regions formed when the first regular region is drawn are not positioned in the first pattern portion of the plurality of first unit regions and the second region is formed. The width of the one or more third stripe-shaped regions so that the plurality of overlapping regions formed when drawing the regular region are not positioned in the second pattern portion of the plurality of second unit regions. The method of manufacturing a photomask according to claim 5, further comprising: 7. The photomask manufacturing method according to claim 5, wherein a width of the one or more third stripe regions is larger than a width of the plurality of first and second stripe regions. The drawing pattern includes a first regular region composed of a plurality of first unit regions arranged at a first pitch in the second direction, and a first pattern different from the first pitch in the second direction. A second regular region composed of a plurality of second unit regions arranged at a pitch of 2,
The partial stripe region is a plurality of first stripe regions including the first regular region, and the other stripe region is a second stripe including the second regular region. Area
In the setting step, a pitch in the second direction of a plurality of overlapping regions formed when the first regular region is drawn is an integral multiple of the first pitch, and the second rule is set. Widths of the plurality of first and second stripe regions so that a pitch in the second direction of a plurality of overlapping regions formed when drawing a target region is an integral multiple of the second pitch The method for manufacturing a photomask according to claim 1, further comprising: setting Each first unit region includes a first pattern portion having a smaller allowable dimension error than the other portion in the first unit region and the other drawing region, and each second unit region includes A second pattern portion having an allowable dimension error smaller than other portions in the second unit region and the other drawing region,
In the setting step, the plurality of overlapping regions formed when the first regular region is drawn are not positioned in the first pattern portion of the plurality of first unit regions and the second region is formed. The widths of the plurality of first stripe regions and the plurality of overlapping regions formed when the regular region is drawn are not positioned in the first pattern portion of the plurality of second unit regions, and 9. The method of manufacturing a photomask according to claim 8, further comprising setting a width of each of the plurality of second stripe regions. The drawing pattern includes a first regular region composed of a plurality of first unit regions arranged at a first pitch in the second direction,
The plurality of stripe-shaped regions include the first regular region, and are configured by a plurality of first stripe-shaped regions and a plurality of second stripe-shaped regions, and the plurality of first stripe-shaped regions. And each of the plurality of second stripe regions are alternately arranged,
The part of the stripe regions is the plurality of first stripe regions, and the other stripe region is the plurality of second stripe regions,
The setting step is formed on both sides along the second direction of each first stripe-shaped region among a plurality of overlapping regions formed when the first regular region is drawn. The sum of the pitch of the pair of overlapping regions and the pitch of the pair of overlapping regions formed on both sides along the second direction of each second stripe region is an integral multiple of the first pitch. 2. The method of manufacturing a photomask according to claim 1, further comprising setting a width of each of the plurality of first and second stripe regions. Each first unit region includes a first pattern portion having an allowable dimension error smaller than that of the other portion in the first unit region and the other drawing region,
In the setting step, the plurality of overlapping regions formed when the first regular region is drawn are not positioned in the first pattern portion of the plurality of first unit regions. 11. The method of manufacturing a photomask according to claim 10, further comprising setting a width of the first stripe region and a width of the plurality of second stripe regions. A photomask manufactured by the manufacturing method according to claim 1. Based on the drawing data corresponding to the drawing pattern to be drawn on the mask blank, the second direction extends in the first direction on the mask blank and has a width in the second direction intersecting the first direction. An apparatus for manufacturing a photomask that sequentially draws a pattern so that an overlapping region extending along the first direction is formed at a boundary portion between adjacent stripe-shaped regions in a plurality of stripe-shaped regions arranged in a row,
Setting means for setting the width of each of the plurality of stripe regions so that the width of some of the plurality of stripe regions is different from the width of the other stripe regions;
Look contains a drawing means for drawing in sequence a plurality of stripe-shaped regions each having a set width by said setting means,
The drawing device draws a pattern in each stripe region by moving a laser beam in the first direction while sweeping a laser beam in a substantially second direction .

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