JP5585518B2 - Semiconductor device and manufacturing method of semiconductor device - Google Patents

Description

  The present invention relates to a semiconductor device including a semiconductor chip, a heat radiating member connected to the semiconductor chip, an external connection terminal connected to the heat radiating member, and an insulating resin integrally molding them, and the semiconductor The present invention relates to a device manufacturing method.

  2. Description of the Related Art Conventionally, an example of a semiconductor device including a semiconductor chip, a heat radiating member connected to the semiconductor chip, a connection terminal (external connection terminal) connected to the heat radiating member, and an insulating resin integrally molding them. There is a semiconductor device disclosed in Patent Document 1.

  The heat radiating member is electrically connected to the semiconductor chip and radiates heat generated from the semiconductor chip, and is disposed so as to sandwich the semiconductor chip. The connection terminal is used for electrical connection between the semiconductor device and the external device, and is electrically connected to each heat dissipation member. In addition, the semiconductor chip, each heat radiation member, and the external connection terminal are integrally molded with an insulating resin. The semiconductor chip and the heat dissipation member, and the heat dissipation member and the external connection terminal are electrically connected by a conductive connection member (solder, conductive adhesive, or the like). Moreover, the heat radiating surface of each heat radiating member is exposed to the outside of the mold resin.

JP 2007-300059 A

  By the way, as this electroconductive connection member, it is possible to use foil-shaped members, such as solder foil, for example. In this case, a foil-like member as a conductive connection member is disposed at a position where the heat dissipation member and the external connection terminal face each other. Then, through a reflow process, the heat dissipation member and the external connection terminal are electrically connected by the conductive connection member.

  However, in the semiconductor device described above, there is nothing that restricts movement of the conductive connection member in a direction along the surface of the heat dissipation member facing the external connection terminal (hereinafter also referred to as a parallel direction). Moreover, the conductive connection member before the reflow process is a foil-like member, and is not connected to the external connection terminal and the heat dissipation member through the molten state. Therefore, the conductive connection member disposed between the heat dissipation member and the external connection terminal may move in the parallel direction before the reflow process.

  Thus, if the conductive connection member moves before reflow, there is a problem that the heat dissipation member and the external connection terminal are not normally connected, resulting in poor connection. That is, the electrical connection region between the heat dissipation member and the external connection terminal may be narrowed, or the heat dissipation member and the external connection terminal may not be connected by the conductive connection member.

  Note that each heat radiating member in Patent Document 1 is for securing parallelism of each heat radiating member at the time of manufacture, and a suspension terminal that does not directly affect the operation of the semiconductor device is connected by a conductive connecting member. . Moreover, the 2nd Embodiment of patent document 1 discloses the example which provides the wall part for positioning a heat radiating member in the front-end | tip part of this suspension terminal (FIG.8 (b) of patent document 1).

  Specifically, the tip of the suspension terminal has a portion where the conductive connection member is disposed opposite to the back surface of the heat dissipation surface of the heat dissipation member, and two side surfaces (heat dissipation surface and And two wall portions facing each of the surfaces connecting the back surface).

  Therefore, even if the foil-like member is used as the conductive connection member, the conductive connection member before the reflow process arranged in the region where the suspension terminal and the heat dissipation member face each other is moved to the wall portion side in the parallel direction by the wall portion. Movement is restricted. Therefore, it can be expected to suppress poor connection between the heat dissipation member and the suspension terminal. In addition, since this suspension terminal does not directly affect the operation of the semiconductor device, it does not necessarily have to be connected to the heat dissipation member by the conductive connection member.

  Therefore, in order to suppress a connection failure between the heat radiating member and the external connection terminal, it is conceivable to provide such a wall portion on the distal end portion of the external connection terminal. However, since the suspension terminal is for positioning the heat radiating member, two wall portions orthogonal to each other are required. Therefore, the suspension terminal is connected to the corner (one of the four corners) of the heat radiating member because each wall portion is arranged to face each of two continuous side surfaces of the heat radiating member. Therefore, when the above-described wall portion is provided on the external connection terminal, the external connection terminal is connected to the corner portion of the heat dissipation member by the conductive connection member. That is, it is not preferable because the connection position of the external connection terminal with respect to the heat dissipation member is limited.

  The present invention has been made in view of the above problems, and can improve the degree of freedom of the connection position of the external connection terminal with respect to the heat dissipation member and the electrical connection reliability between the external connection terminal and the heat dissipation member. An object of the present invention is to provide a semiconductor device and a method for manufacturing the semiconductor device.

In order to achieve the above object, a semiconductor device according to claim 1,
A semiconductor chip (10);
A heat dissipating member (20, 30) electrically connected to the semiconductor chip (10);
External connection terminals (50, 60) electrically connected by the heat dissipating members (20, 30) and the conductive connection members (92, 95);
A semiconductor device (100) comprising a semiconductor chip (10), a heat dissipation member (20, 30), and an insulating resin (80) integrally molding external connection terminals (50, 60),
A part of the external connection terminals (50, 60) and a part of the heat dissipation member (20, 30) are exposed to the outside of the insulating resin (80).
The external connection terminals (50, 60)
Connection portions (51, 61) connected to one surface of the heat dissipation member (20, 30) by conductive connection members (92, 95);
Extending portions (53, 63) extending continuously from the connecting portions (51, 61) to the outside of the insulating resin (80),
The extending portion (53, 63) is provided with a facing portion (52, 62) that is bent from the connecting portion (51, 61) and faces one side surface (23, 33) of the heat dissipation member (20, 30). It is characterized by being.

  In this way, even if a foil-like member such as a solder foil is used as the conductive connection member (92, 95), before connecting to the heat dissipation member (20, 30) or the connection portion (51, 61). The conductive connecting members (92, 95) can be restricted from moving from the facing region between the heat dissipating member (20, 30) and the connecting portion (51, 61) toward the facing portion (52, 62). That is, even if the conductive connection member (92, 95) moves in the direction of the facing portion (52, 62), the conductive connecting member (92, 95) contacts the facing portion (52, 62) so that it is outside the facing portion (52, 62). Movement to is restricted. Therefore, the electrical connection area between the heat radiation member (20, 30) and the external connection terminal (50, 60) is narrowed, or the heat radiation member (20, 30) and the external connection terminal (50, 60). Can be prevented from being connected by the conductive connecting members (92, 95). Therefore, the electrical connection reliability between the external connection terminals (50, 60) and the heat dissipation member (20, 30) can be improved.

  In the external connection terminals (50, 60), the facing portions (52, 62) face only one side surface (23, 33) of the heat dissipation member (20, 30). Therefore, the connection positions of the external connection terminals (50, 60) with the heat radiating members (20, 30) are not limited to the corners of the heat radiating members (20, 30). Therefore, the freedom degree of the connection position with respect to the thermal radiation member (20, 30) of the external connection terminal (50, 60) can be improved.

In addition, as shown in claim 2, the conductive connection member (92, 95) that electrically connects the heat dissipation member (20, 30) and the connection portion (51, 61) includes the opposing portion (52, 95). 62) and the side surface (23, 33) of the heat dissipation member (20, 30),
The opposing portions (52, 62) may be connected to the side surfaces (23, 33) of the heat dissipation member (20, 30) by the conductive connection members (92, 95).

  Thereby, the heat radiating member (20, 30) and the external connection terminals (50, 60) are not only the one surface and the connecting portion (51, 61) of the heat radiating member (20, 30), but also the heat radiating member (20, 30). ) And the opposing portions (52, 62) are also electrically connected. Therefore, the heat radiating member (20, 30) and the external connection terminals (50, 60) can be compared to the case where only one surface of the heat radiating member (20, 30) and the connection portion (51, 61) are electrically connected. This is preferable because the connection area can be increased.

Moreover, as shown in claim 3, the semiconductor chip (10) is one in which the heat dissipating members (20, 30) are electrically connected to both sides,
As the external connection terminals (50, 60), two external connection terminals (50, 60) connected to the respective heat radiation members (20, 30) may be included.

  That is, as the external connection terminals (50, 60), one external connection terminal (60) connected to one heat radiating member (20) and another external terminal connected to the other heat radiating member (30). And a connection terminal (50). Thus, even when two external connection terminals (50, 60) are included, the degree of freedom of the connection position of each external connection terminal (50, 60) with respect to the heat dissipation member (20, 30) is improved. Can do. Therefore, it is preferable because the position of each external connection terminal (50, 60) can be determined according to the terminal position (terminal interval) of the external device to which each external connection terminal (50, 60) is connected.

Further, as shown in claim 4, the heat radiating member (20, 30) is a portion (24, 34) recessed from the periphery at the edge on the surface (21, 31) side facing the semiconductor chip (10). )
The connecting portions (51, 61) may be connected to the recessed portions (24, 34) with conductive connecting members (92, 95).

  That is, each connection part (51, 61) is connected to the surface where heat radiating members (20, 30) oppose. In such a case, as shown in claim 4, by connecting the connecting portions (51, 61) to the recessed portions (24, 34) of the heat radiating members (20, 30), the heat radiating members (20, 30) are connected. ) Can be widened. Therefore, the insulating resin (80) can easily enter between the heat radiating members (20, 30).

  However, as shown in claim 5, the connection portions (51, 61) of the external connection terminals (50, 60) are surfaces (21) facing the semiconductor chip (10) of the heat dissipation member (20, 30). , 31) may be connected to the opposite surface (22, 32). Even in this way, the object of the present invention can be achieved.

  In addition, by doing in this way, it is easy to determine the connection / non-connection of the conductive connection members (92, 95) by the appearance inspection before the molding with the insulating resin (80). it can. Particularly, it is effective when the heat radiating members (20, 30) are electrically connected to both surfaces of the semiconductor chip (10) and the external connection terminals (50, 60) are connected to the heat radiating members (20, 30). It is. Furthermore, by doing in this way, the space | interval between each heat radiating member (20, 30) can be made still wider. Therefore, the insulating resin (80) can easily enter between the heat radiating members (20, 30).

Further, as shown in claim 6, the heat dissipating member (20, 30) has a portion (25, 35) recessed from the periphery at the edge on the opposite surface (22, 32) side,
The connecting portions (51, 61) may be connected to the recessed portions (25, 35) with conductive connecting members (92, 95).

  By doing in this way, it can suppress or prevent that a connection part (51, 61) protrudes from a heat radiating member (20, 30). Further, the connecting portion between the heat radiation member (20, 30) and the conductive connecting member (92, 95) and the connecting portion between the connecting portion (51, 61) and the conductive connecting member (92, 95) are insulated. It can be easily covered with the resin (80). Therefore, it can suppress that the connection part of a thermal radiation member (20, 30) and the external connection terminal (50, 60) is exposed outside the insulating resin (80), and the external connection terminal (50, 60) and Electrical connection reliability with the heat radiating members (20, 30) can be improved.

In order to achieve the above object, the invention described in claim 7
A semiconductor chip (10);
A heat dissipating member (20, 30) electrically connected to the semiconductor chip (10);
External connection terminals (50, 60) electrically connected by the heat dissipating members (20, 30) and the conductive connection members (92, 95);
A method for manufacturing a semiconductor device (100) comprising: a semiconductor chip (10); a heat dissipation member (20, 30); and an insulating resin (80) for integrally molding external connection terminals (50, 60). ,
A part of the external connection terminals (50, 60) and a part of the heat dissipation member (20, 30) are exposed to the outside of the insulating resin (80).
The external connection terminals (50, 60)
Connection portions (51, 61) connected to one surface of the heat dissipation member (20, 30) by the conductive connection members (92, 95);
Extending portions (53, 63) extending continuously from the connecting portions (51, 61) to the outside of the insulating resin (80),
The extending portion (53, 63) is provided with a facing portion (52, 62) that is bent from the connecting portion (51, 61) and faces one side surface (23, 33) of the heat dissipation member (20, 30). Is,
A first step of disposing a foil-like conductive connection member (92, 95) at a connection position between the heat dissipation member (20, 30) and the external connection terminal (50, 60);
After the first step, while sandwiching the conductive connection member (92, 95) between the heat dissipation member (20, 30) and the connection portion (51, 61), the side surface (23, 33) and the facing portion (52, 62) A second step of assembling the heat dissipating members (20, 30) and the external connection terminals (50, 60) opposite to each other;
A third step of melting the conductive connecting members (92, 95) after the second step and electrically connecting the heat dissipating members (20, 30) and the external connection terminals (50, 60);
It is characterized by having.

  By performing the third step after the second step in this manner, even if a foil-like member such as a solder foil is used as the conductive connection member (92, 95), the heat dissipation member (20, 30) or the connection portion ( 51, 61) before connecting to the conductive connecting member (92, 95) moves from the facing region of the heat radiating member (20, 30) to the connecting portion (51, 61) in the direction of the facing portion (52, 62). Can be restricted. That is, even if the conductive connection member (92, 95) moves in the direction of the facing portion (52, 62), the conductive connecting member (92, 95) contacts the facing portion (52, 62) so that it is outside the facing portion (52, 62). Movement to is restricted.

  Therefore, the electrical connection area between the heat radiation member (20, 30) and the external connection terminal (50, 60) is narrowed, or the heat radiation member (20, 30) and the external connection terminal (50, 60). Can be prevented from being connected by the conductive connecting members (92, 95). Therefore, a semiconductor device with improved electrical connection reliability between the external connection terminals (50, 60) and the heat dissipation member (20, 30) can be manufactured.

  In the external connection terminals (50, 60), the facing portions (52, 62) face only one side surface (23, 33) of the heat dissipation member (20, 30). Therefore, the connection positions of the external connection terminals (50, 60) with the heat radiating members (20, 30) are not limited to the corners of the heat radiating members (20, 30). Therefore, the freedom degree of the connection position with respect to the thermal radiation member (20, 30) of the external connection terminal (50, 60) can be improved.

Further, as shown in claim 8, in the second step, the side surfaces (23, 33) and the facing portions (52, 62) are opened with a gap less than the thickness of the conductive connecting member (92, 95). Assembled,
In the third step, the conductive connection members (92, 95) may be melted to electrically connect the heat radiation members (20, 30) and the external connection terminals (50, 60).

  By doing so, the conductive connection member (92, 95) in a melted state can be wetted and spread to the gap between the side surface (23, 33) and the facing portion (52, 62) by wicking. it can. Therefore, the heat radiating member (20, 30) and the external connection terminals (50, 60) are more effective than the case where only one surface of the heat radiating member (20, 30) and the connecting portion (51, 61) are electrically connected. This is preferable because the connection area can be increased. Accordingly, it is possible to manufacture the semiconductor device (100) in which the connection region between the heat dissipation member (20, 30) and the external connection terminal (50, 60) is increased.

In addition, as shown in claim 9, the area to be connected to the connection portion (51, 61) of the heat dissipation member (20, 30) is connected to the connection portion (51, 61) of the heat dissipation member (20, 30). Using a jig (300b) enclosing in a direction along the surface,
An installation step of installing a jig on the connection surface side of the heat dissipation member (20, 30);
The first step, the second step, and the third step may be performed with the jig (300b) installed.

  By doing so, the foil-like conductive connection member (92, 95) before melting is restricted from moving from the facing region between the heat dissipation member (20, 30) and the connection portion (51, 61). it can. That is, the movement to the direction along the opposing surface with the connection part (51, 61) of a thermal radiation member (20, 30) can be restrict | limited. Therefore, it is possible to manufacture a semiconductor device in which the electrical connection reliability between the external connection terminals (50, 60) and the heat radiating members (20, 30) is further improved.

  Further, as shown in claim 10, a member to be the external connection terminal (50, 60) is bent, and the connection portion (51, 61), the facing portion (52, 62), the extension portion (53, 63). You may make it provide the bending process which forms.

  By doing so, it is possible to employ a member (for example, a lead frame) that does not have the facing portion (52, 62) as the external connection terminal (50, 60).

1 is a plan view illustrating a schematic configuration of a semiconductor device according to a first embodiment of the present invention. (A) is sectional drawing which follows the IIa-IIa line | wire of FIG. 1, (b) is sectional drawing which follows the IIb-IIb line | wire of FIG. (A) is a plan view of a member (lead frame) to be a collector terminal, (b) is a side view from the direction IIIb of FIG. 3 (a), and (c) is a plan view of a member to be an emitter terminal. (D) is a side view from the IIId direction of FIG. 3 (c). FIG. 4A is a plan view of a lead frame subjected to a bending process, FIG. 4B is a side view from the direction IVb of FIG. 4A, and FIG. It is a top view, (d) is a side view from the IVd direction of FIG.4 (c). (A) is a top view of the lead frame and heat radiating member which performed the arrangement | positioning process, (b) is a side view from the Vb direction of Fig.5 (a), (c) is the emitter which performed the arrangement | positioning process. It is a top view of a terminal, (d) is a side view from the Vd direction of FIG.5 (c). (A) is a top view of the lead frame and heat dissipation member etc. which performed the mounting process, (b) is a side view from the VIb direction of Fig.6 (a). (A) is a top view of a lead frame and a heat radiating member subjected to an assembling process, and (b) is a side view from the VIIb direction of FIG. 7 (a). (A) is a top view of the semiconductor device which performed the molding process, (b) is a side view (perspective view) from the VIIIb direction of Fig.8 (a). (A) is a top view of the semiconductor device which performed the cutting process, (b) is a side view (perspective view) from the IXb direction of Fig.9 (a). (A) is a plan view of the lower jig, (b) is a cross-sectional view taken along line Xb-Xb in FIG. 10 (a), (c) is a plan view of the upper jig, (d) These are side views from the Xd direction of FIG.10 (c). (A) is a top view of the state which installed the heat radiating member and the upper jig in the lower jig, (b) is sectional drawing which follows the XIb-XIb line | wire of Fig.11 (a), (c) is It is a top view of the state which installed the electroconductive connection member and the lead frame, (d) is sectional drawing which follows the XId-XId line | wire of FIG.11 (c). It is sectional drawing which shows schematic structure of the semiconductor device in 2nd Embodiment of this invention, (a) is equivalent to FIG. 2 (a), (b) is equivalent to FIG.2 (b). is there. It is drawing which shows a part of manufacturing process of the semiconductor device in 2nd Embodiment of this invention, and is sectional drawing of the state which installed the lead frame, the electroconductive connection member, the heat radiating member, and the upper jig in the lower jig. It is sectional drawing which shows schematic structure of the semiconductor device in 3rd Embodiment of this invention, (a) is equivalent to FIG. 2 (a), (b) is equivalent to FIG.2 (b). is there. It is drawing which shows schematic structure of the member used as the collector terminal in 3rd Embodiment of this invention, (a) is a top view, (b) is a top view in the state which gave the bending process, (c ) Is a sectional view taken along line XVc-XVc in FIG. It is sectional drawing which shows schematic structure of the semiconductor device in 4th Embodiment of this invention, (a) is equivalent to Fig.2 (a), (b) is equivalent to FIG.2 (b). is there. It is sectional drawing which shows schematic structure of the semiconductor device in 5th Embodiment of this invention, (a) is equivalent to Fig.2 (a), (b) is equivalent to FIG.2 (b). is there. It is a top view which shows schematic structure of the semiconductor device in 6th Embodiment of this invention. (A) is sectional drawing which follows the XIXa-XIXa line of FIG. 18, (b) is sectional drawing which follows the XIXb-XIXb line of FIG. It is a top view which shows schematic structure of the semiconductor device in 7th Embodiment of this invention. (A) is sectional drawing which follows the XXIa-XXIa line | wire of FIG. 20, (b) is sectional drawing which follows the XXIb-XXIb line | wire of FIG.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings.

(First embodiment)
First, the semiconductor device 100 according to the first embodiment will be described with reference to FIGS. In the following description, the parallel direction indicates a direction parallel to the connection surfaces 21 and 31 of the heat dissipation members 20 and 30. In other words, it indicates a direction parallel to the surface of the heat dissipating members 20 and 30 facing the semiconductor chip 10. For example, in FIG. 1, it is the direction along the paper surface. The thickness direction indicates the thickness direction of the semiconductor chip 10. In other words, it indicates a direction perpendicular to the surfaces of the semiconductor chip 10 facing the heat dissipation members 20 and 30 (the connection surface of the conductive connection member 93 and the connection surface of the conductive connection member 91). For example, in FIGS. 2A and 2B, it is the vertical direction of the page.

  The semiconductor device 100 shown in FIGS. 1 and 2 is incorporated in an inverter circuit of a vehicle, for example, and can be applied as a device for PWM control of a load (for example, a motor). The semiconductor device 100 mainly includes a semiconductor chip 10 (here, two semiconductor chips 10), heat radiation members 20 and 30 electrically, mechanically and thermally connected to the semiconductor chip 10, and a heat radiation member. 20 and 30 and a collector terminal 50 and an emitter terminal 60 which are external connection terminals electrically and mechanically connected by conductive connection members 92 and 95. Further, a mold resin (insulating resin) 80 for integrally molding the semiconductor chip 10, the heat radiating members 20 and 30, the collector terminal 50 and the emitter terminal 60 is also provided.

  Further, in order to electrically connect the semiconductor device 100 to an external device provided outside the semiconductor device 100, a part of the collector terminal 50 and the emitter terminal 60 (a part of the extending portions 53 and 63) is molded. The resin 80 is exposed to the outside. The collector terminal 50 and the emitter terminal 60 flow more than a small current external connection terminal (hereinafter also referred to as a small current terminal), which will be described later. be able to. That is, the collector terminal 50 and the emitter terminal 60 are external connection terminals through which a large current flows in the semiconductor chip 10. On the other hand, the small current external connection terminal is an external connection terminal through which a small current flows in the semiconductor chip 10.

  Further, in the semiconductor device 100, part of the heat radiating members 20 and 30 (heat radiating surfaces 22 and 32) are exposed to the outside of the mold resin 80. As described above, the semiconductor device 100 has the heat dissipation structure by exposing the heat dissipation surfaces 22 and 32 of the heat dissipation members 20 and 30 electrically and mechanically and thermally connected to the semiconductor chip 10 to the outside of the mold resin 80. Is formed. Therefore, the semiconductor device 100 can be restated as a semiconductor device having a heat dissipation structure.

  In addition to this, the semiconductor device 100 includes, for example, small current terminals 41 to 45 such as a gate terminal, a small emitter terminal, and a temperature sensor terminal, small current terminals 41 to 45, and the semiconductor chip 10 (small Wires 41a to 45a for electrically connecting the current electrodes). Further, the semiconductor device 100 includes a block body 70 for preventing the wires 41a to 45a and the heat dissipation member 20 from contacting each other. The small current terminals 41 to 45, the wires 41a to 45a, and the block body 70 are also molded integrally with the above-described semiconductor chip 10 and the like with the mold resin 80.

  The semiconductor chip 10 has a plurality of transistor structures formed on a semiconductor substrate such as silicon by a known semiconductor process. For example, an IC chip in which a power transistor element used for power control of a load, such as a power MOSFET or IGBT (insulated gate bipolar transistor), is configured. In the present embodiment, an IGBT (insulated gate bipolar transistor) is employed as the power transistor element. That is, the semiconductor chip 10 in the present embodiment has a so-called vertical structure so that a current flows in the thickness direction. Therefore, it can be said that the semiconductor chip 10 has a double-sided electrode structure. The semiconductor chip 10 is provided with a signal processing circuit unit (large scale integrated circuit) in which elements other than the power transistor element, for example, elements such as a diode, a resistor, a capacitor, a CMOS, and a bipolar transistor are integrated. Can also be adopted.

  Although not shown, electrodes (for example, electrodes) for connecting the semiconductor device 100 and the outside of the semiconductor device 100 (external device) are provided on both surfaces (both surfaces perpendicular to the thickness direction) of the semiconductor chip 10. Made of a Ni-based material). As this electrode, a large current electrode (emitter pad, collector pad) through which a large current flows in the IGBT is provided on each of both surfaces of the semiconductor chip 10. In other words, one of the emitter pad and the collector pad, which are electrodes for high current, is provided on one surface of the semiconductor chip 10 and the other is provided on the opposite surface of the surface. For example, in FIG. 2A, an emitter pad is provided on the upper surface of the semiconductor chip 10 (the surface facing the heat dissipation member 20), and the lower surface of the semiconductor chip 10 (the surface facing the heat dissipation member 30). The collector pad is provided on the surface to be collected.

  In the semiconductor chip 10, the block body 70 is electrically, mechanically and thermally connected to an emitter pad (not shown) via a conductive connection member 93 made of, for example, solder. Further, in the block body 70, the heat dissipation member 20 is electrically, mechanically, and thermally connected to the opposite surface of the connection surface with the semiconductor chip 10 via a conductive connection member 94 made of, for example, solder. . That is, in the semiconductor chip 10, the heat dissipation member 20 is electrically, mechanically, and thermally connected to the emitter pad. Note that the opposite surface of the heat dissipation member 20 to the connection surface 21 (connection surface on the semiconductor chip 10 side) with the block body 70 is the heat dissipation surface 22 exposed to the outside of the mold resin 80.

  In the semiconductor chip 10, the heat dissipation member 30 is electrically, mechanically, and thermally connected to a collector pad (not shown) through a conductive connection member 91 made of, for example, solder. The opposite surface of the heat dissipation member 30 to the connection surface 31 (connection surface on the semiconductor chip 10 side) with the semiconductor chip 10 is a heat dissipation surface 32 exposed to the outside of the mold resin 80. As described above, the semiconductor chip 10 has the heat radiating members 20 and 30 electrically, mechanically, and thermally connected to both surfaces. That is, the semiconductor device 100 has a double-sided heat dissipation structure.

  The heat radiating members 20 and 30 have, for example, a rectangular parallelepiped shape. The connection surfaces 21 and 31 and the heat dissipation surfaces 22 and 32 of the heat dissipation members 20 and 30 are flat surfaces and have a larger area than the surface of the semiconductor chip 10 facing the heat dissipation members 20 and 30. Reference numeral 23 denotes a side surface of the heat radiating member 20 (a surface connecting the connection surface 21 and the heat radiating surface 22). Similarly, reference numeral 33 denotes a side surface of the heat radiating member 30 (a surface connecting the connection surface 31 and the heat radiating surface 32).

  The heat dissipating members 20 and 30 and the block body 70 function as a part of the large-current external connection terminal of the semiconductor chip 10 and function to dissipate heat generated in the semiconductor chip 10 to the outside of the semiconductor device 100. Fulfill. The heat radiating members 20 and 30 and the block body 70 are formed using at least a metal material in order to ensure thermal conductivity and electrical conductivity. For example, Cu, Au, Ag, Al, or an alloy containing at least one of these metals can be employed.

  Further, although not shown, the semiconductor chip 10 is provided with small current electrodes that are electrically connected to the small current terminals 41 to 45 via the wires 41a to 45a on the surface on which the emitter pads are provided. It has been. The small current electrodes are collectively arranged at one place on the edge of the semiconductor chip 10. As described above, the semiconductor chip 10 has a smaller current than the current flowing through the IGBT, the emitter pad (emitter electrode) and the collector pad (collector electrode) through which a large current flows in the IGBT, and the emitter pad and the collector pad. A flowing small current electrode is provided.

  As shown in FIG. 2B, the emitter terminal 60 is electrically and mechanically connected to the connection surface 21 of the heat dissipation member 20 via a conductive connection member 95 made of, for example, solder. As shown in FIG. 2A, the collector terminal 50 is electrically and mechanically connected to the connection surface 31 of the heat dissipation member 30 via a conductive connection member 92 made of, for example, solder. . As described above, the semiconductor device 100 according to the present embodiment includes the emitter terminal 60 and the collector terminal 50 connected to each of the heat dissipation members 20 and 30 as the external connection terminals of the present invention. The collector terminal 50 and the emitter terminal 60 may be made of, for example, Cu, Au, Ag, Al, or an alloy containing at least one of these metals.

  The collector terminal 50 and the emitter terminal 60 are configured by bending (bending) a plate-like member. The collector terminal 50 and the emitter terminal 60 have the same shape. Therefore, in the following, description will be given using the collector terminal 50.

  As shown in FIGS. 1 and 2A, the collector terminal 50 includes a connection portion 51 that is a portion connected to one surface of the heat dissipation member 30 by a conductive connection member 92, and a continuous connection from the connection portion 51. And an extending portion 53 extending to the outside of the mold resin 80. In other words, the extending portion 53 is continuously extended from the connecting portion 51 to the outside of the facing region of the connecting surface 31 in the heat dissipation member 30. In addition, the extending portion 53 is provided with a facing portion 52 that is bent from the connecting portion 51 and faces one side surface 33 of the heat radiating member 30. In the emitter terminal 60, reference numeral 61 indicates a connecting portion, reference numeral 62 indicates a facing portion, and reference numeral 63 indicates an extending portion.

  The connection portion 51 has a flat surface that faces the connection surface 31 of the heat dissipation member 30. That is, the connection part 51 is provided in parallel to the connection surface 31 of the heat dissipation member 30. The facing portion 52 is bent at a right angle from the connecting portion 51 along the side surface 33 of the heat radiating member 30 and has a flat surface facing the side surface 33 of the heat radiating member 30. In other words, it can be said that the facing portion 52 is provided so as to protrude in the direction facing the side surface 33 of the heat radiating member 30 with respect to the connecting portion 51. That is, it can be said that the facing portion 52 is provided so as to protrude along the side surface 33 of the heat radiating member 30 with respect to the connecting portion 51. Further, the facing portion 52 is provided in parallel to the side surface 33 of the heat radiating member 30.

  The distance between the side surface 33 of the heat radiating member 30 and the facing portion 52 is equal to or less than the thickness of the member before the conductive connecting member 95 is melted (that is, a foil-like member (for example, solder foil)). . That is, the facing portion 53 is disposed so as to contact the side surface 33 of the heat radiating member 30 or to have a gap (gap) less than the thickness of the foil-shaped member between the side surface 33 of the heat radiating member 30. .

  In addition, the portion of the collector terminal 50 exposed from the mold resin 80 is between the upper and lower heat radiating members 20 and 30 in consideration of the ease of handling in the manufacturing process such as resin molding and electrical inspection, and the creepage distance (that is, The semiconductor device 100) is desirably located in the center in the thickness direction. Therefore, the collector terminal 50 is bent along the side surface 33 of the heat radiating member 30 with respect to the connecting portion 51 as shown in FIG. The exposed portion is bent again so as to be positioned at the center in the thickness direction between the upper and lower heat radiating members 20 and 30 (that is, the semiconductor device 100). Therefore, the collector terminal 50 is bent at four places.

  As described above, when connecting the heat radiating member 30 and the collector terminal 50 (connecting portion 51) using a foil-like member such as a solder foil as the conductive connecting member 92, first, the heat radiating member 30 and the collector terminal 50 are connected to each other. A foil-like member is disposed in the opposite region. In this state, the heat radiating member 30 and the collector terminal 50 can be connected by melting the foil-like member (conductive connecting member 92). However, the foil-like member (conductive connection member 92) disposed in the region where the heat radiation member 30 and the collector terminal 50 are opposed to each other is not connected to the heat radiation member 30 and the collector terminal 50 through a molten state. . That is, the foil-like member (conductive connecting member 92) is merely in contact with the heat dissipation member 30 and the collector terminal 50.

  Therefore, when the facing parts 52 and 62 are not provided, the foil-like member (conductive connecting member 92) can move in the parallel direction before the reflow process due to vibrations when transported to a reflow furnace or the like. There is sex. That is, it is conceivable that the heat radiation member 30 and the connection portion 51 are shifted from the facing region and partially protrude from the heat radiation member 30 and the connection portion 51.

  Thus, if the conductive connection member 92 moves before reflow, there is a possibility that the heat dissipation member 30 and the collector terminal 50 are not normally connected, resulting in poor connection. That is, an electrical connection region between the heat dissipation member 30 and the collector terminal 50 may be narrowed, or the heat dissipation member 30 and the collector terminal 50 may not be connected by the conductive connection member 92.

  However, the semiconductor device 100 according to the present embodiment is provided with the facing portion 52 on the collector terminal 50 as described above. Thus, even if a foil-like member such as a solder foil is used as the conductive connection member 92, the foil-like member (conductive connection member 92) before melting is opposed to the heat radiation member 30 and the connection portion 51. Movement from the region toward the facing portion 52 can be restricted. That is, even if the foil-shaped member before melting moves in the direction of the facing portion 52, the movement of the foil-shaped member outside the facing portion 52 is restricted by contacting the facing portion 52.

  Therefore, the electrical connection region between the heat radiating member 30 and the collector terminal 50 is narrowed, or the heat radiating member 30 and the collector terminal 50 are not connected by the conductive connecting member 92 (that is, poor connection). Can be suppressed. That is, a sufficient electrical connection region (connection area) between the heat radiation member 30 and the collector terminal 50 can be secured. Therefore, the electrical connection reliability between the collector terminal 50 and the heat radiating member 30 can be improved.

  In particular, the gap between the side surface 33 of the heat radiating member 30 and the facing portion 52 can be eliminated by bringing the side surface 33 of the heat radiating member 30 into contact with the facing portion 52. Therefore, the foil-like member before melting is preferable because it does not move between the side surface 33 of the heat radiating member 30 and the facing portion 52 even if it moves in the direction of the facing portion 52. Similarly, even if the distance between the side surface 33 of the heat radiating member 30 and the facing portion 52 is equal to or less than the thickness of the foil-shaped member before melting, the distance between the side surface 33 of the heat radiating member 30 and the facing portion 52 is similarly passed. It is preferable because it does not move.

  Further, the collector terminal 50 has the facing portion 52 facing only one side surface 33 of the heat radiating member 30. That is, the facing portion 52 only protrudes along the one side surface 33 of the heat dissipation member 30 with respect to the connection portion 51. Therefore, the connection position of the collector terminal 50 with the heat dissipation member 30 is not limited to the corner of the heat dissipation member 30. Therefore, the freedom degree of the connection position with respect to the heat radiating member 30 of the collector terminal 50 can be improved. That is, the degree of freedom of the arrangement position of the collector terminal 50 in the semiconductor device 100 can be improved.

  For example, the mounting positions of the semiconductor device 100 and the external device on the attached body (for example, the vehicle body) may be determined. In such a case, when the position of the collector terminal 50 is limited (for example, limited to the corner of the heat dissipation member 30), the shape of the collector terminal 50 is used to electrically connect the semiconductor device 100 and the external device. Needs to have a shape corresponding to the positional relationship between the semiconductor device 100 and the external device. However, in the semiconductor device 100 according to the present embodiment, the degree of freedom of the arrangement position of the collector terminal 50 in the semiconductor device 100 can be improved, so that the degree of freedom of the shape of the collector terminal 50 can also be improved.

  Moreover, the same effect (improvement of connection reliability, improvement of the degree of freedom of connection position, improvement of the degree of freedom of shape) can be achieved on the side where the heat radiating member 20 and the emitter terminal 60 are connected. Even when two external connection terminals (here, the collector terminal 50 and the emitter terminal 60) are included as in this embodiment, the degree of freedom of the connection position of the collector terminal 50 with respect to the heat dissipation member 30, and the emitter The degree of freedom of the connection position of the terminal 60 with respect to the heat radiating member 20 can be improved. Therefore, the position (interval) between the collector terminal 50 and the emitter terminal 60 can be determined according to the terminal position (terminal interval) of the external device to which the collector terminal 50 and the emitter terminal 60 are connected.

  Further, in the semiconductor device 100 of the present embodiment, the positional relationship between the heat radiating members 20 and 30 and the emitter terminal 60 and the collector terminal 50 is preferably determined by a single component. Further, it is preferable because the product tolerance of the semiconductor device 100 is determined only by the part tolerance (not including the jig tolerance). That is, by aligning the facing portion 62 of the heat dissipation member 20 and the emitter terminal 60 and the facing portion 52 of the heat dissipation member 30 and the collector terminal 50 (for example, the side surface of the heat dissipation member 30 and the facing portion 52 of the collector terminal 50 are The positional relationship of these components is determined by a single component, such as contacting the side surface of the heat radiating member 20 and the facing portion 62 of the emitter terminal 60). Therefore, it is not necessary to align these parts with a jig (including positioning pins), and the jig can be made pinless, and the product tolerance is only the part tolerance.

  The small current terminals 41 to 45 are portions arranged in the mold resin 80, and connecting portions (small current terminals) of the wires 44 a to 45 a provided in parallel to the connection surface 31 of the heat radiating member 30. In the case of 41, it has a code | symbol 441) and the extended part extended continuously from this connection part (for example, 441) to the exterior of the mold resin 80. FIG. With regard to the extended portions of the small current terminals 41 to 45, the thickness between the upper and lower heat radiating members 20 and 30 is considered in consideration of the ease of handling in the manufacturing process such as resin molding and electrical inspection, and the problem of creepage distance. It is desirable to be centered in the direction.

  Here, characteristic points in the method of manufacturing the semiconductor device 100 will be described with reference to FIGS.

  First, as shown in FIGS. 3 (a) and 3 (b), the lead frame 200 serving as the small current terminals 41 to 45 and the collector terminal 50, and the emitter terminal as shown in FIGS. 3 (c) and 3 (d). A member to be 60 is prepared.

  As shown in FIG. 3A, the lead frame 200 includes a collector terminal 50, small current terminals 41 to 45, and a holding portion 46 connected by a connecting portion 210. The holding part 46 is a part that holds the heat dissipation member 30 together with the collector terminal 50. Therefore, the holding unit 46 does not have an electrical function in the semiconductor device 100.

  Next, as shown in FIGS. 4A to 4D, a bending process is performed on the members to be the lead frame 200 and the emitter terminal 60. This is because the connecting portion 51, the facing portion 52, and the extending portion 53 (the reference numerals are omitted in FIG. 4) in the collector terminal 50, and the connecting portion 61, the facing portion 62, and the extending portion 63 (in FIG. 4). In FIG. 4, the reference numerals are omitted). In this bending step, wire connection portions 441 to 451 in the small current terminals 41 to 45 may also be formed.

  For example, the members that become the lead frame 200 and the emitter terminal 60 are bent by pressing (bending) to connect the connecting portion 51 in the collector terminal 50, the facing portion 52, the extending portion 53, and the small current terminals 41 to 45. The parts 441 to 451, the connecting part 61 in the emitter terminal 60, the facing part 62, and the extending part 63 are formed. In addition, by performing press working on the lead frame 200, the connection part 51 in the collector terminal 50, the facing part 52, the extending part 53, and the connection parts 441 to 451 in the small current terminals 41 to 45 are collectively formed. . Further, by pressing the member to be the emitter terminal 60, the connecting portion 61, the facing portion 62, and the extending portion 63 in the emitter terminal 60 are collectively formed.

  Incidentally, reference numeral 461 in FIG. 4B is a connection part of the holding part 46 with the heat radiating member 30, and reference numeral 462 is an opposing part of the holding part 46. The connection portion 461 is the same as the connection portion 51 of the collector terminal 50 and the connection portion 61 of the emitter terminal 60. On the other hand, the facing portion 462 is similar to the facing portion 52 of the collector terminal 50 and the facing portion 62 of the emitter terminal 60.

  By performing the bending process in this manner, a member (for example, the lead frame 200) that does not have the facing portions 52 and 62 as the collector terminal 50 and the emitter terminal 60 can be employed.

  Next, as shown in FIGS. 5A to 5D, the conductive connecting members 92, 95, 96, the lead frame 200 after the bending process, the emitter terminal 60, The arrangement | positioning process which arrange | positions the member which becomes is performed.

  In this arrangement step, a foil-like conductive connection member 92 is arranged at a connection position of the heat dissipation member 30 with the collector terminal 50 (first step). Similarly, a foil-like conductive connecting member 95 is disposed at a position where the heat radiating member 20 is connected to the emitter terminal 60 (first step). In the first step, a foil-like conductive connection member 96 is disposed at a connection position of the heat dissipation member 30 with the holding portion 46. In addition, when arrange | positioning the electroconductive connection members 92,95,96 in the heat radiating members 20 and 30, the heat radiating members 20 and 30 are the states in which the connection surfaces 21 and 31 are facing the direction opposite to gravity. desirable.

  Further, after this first step, while sandwiching the conductive connection member 92 before melting (foil shape) between the heat dissipation member 30 and the connection portion 51, the side surface 33 and the facing portion 52 are opposed to each other, and the side surface 33 and the facing portion 52 are The heat radiating member 30 and the collector terminal 50 (lead frame 200) are assembled so that the distance is equal to or less than the thickness of the conductive connecting member 92 (second step). At this time, the conductive connection member 96 before melting is sandwiched between the heat radiation member 30 and the connection portion 461, the side surface 33 and the facing portion 462 face each other, and the distance between the side surface 33 and the facing portion 462 is the conductive connection member 96. The heat dissipating member 30 and the collector terminal 50 (lead frame 200) are assembled so that the thickness is less than or equal to the thickness of the heat sink. The conductive connection member 92 is in contact with the heat dissipation member 30 and the connection portion 51. Similarly, the conductive connection member 96 comes into contact with the heat dissipation member 30 and the connection portion 461.

  In other words, the lead frame 200 after the bending process is disposed on the heat radiating member 30 on which the foil-like conductive connection members 92 and 96 are disposed. At this time, while aligning the conductive connection member 92 on the heat dissipation member 30 and the connection portion 51 of the collector terminal 50 and the conductive connection member 96 on the heat dissipation member 30 and the connection portion 461 of the holding portion 46, the side surface 33 is aligned. A member (lead frame 200) that becomes the heat radiating member 30 and the collector terminal 50 such that the distance between the facing portion 52 and the distance between the side surface 33 and the facing portion 462 is equal to or less than the thickness of the conductive connecting members 92 and 96. Are assembled (second step).

  Similarly, after the first step, the side surface 23 and the facing portion 62 are opposed to each other while the conductive connection member 95 before melting (foil shape) is sandwiched between the heat radiation member 20 and the connecting portion 61, and the side surface 23 and the facing portion are opposed to each other. The heat radiating member 20 and the emitter terminal 60 (the member that becomes the emitter terminal 60) are assembled so that the distance from 62 is equal to or less than the thickness of the conductive connecting member 95 (second step). In other words, a member to be the emitter terminal 60 after the bending process is disposed with respect to the heat radiating member 20 on which the foil-like conductive connection member 95 is disposed. At this time, the distance between the side surface 23 and the facing portion 62 is equal to or less than the thickness of the conductive connection member 95 while aligning the conductive connection member 95 on the heat dissipation member 20 and the connection portion 61 of the emitter terminal 60. Then, the heat radiating member 20 and the emitter terminal 60 (the member that becomes the emitter terminal 60) are assembled (second step). The conductive connecting member 95 is in contact with the heat radiating member 20 and the connecting portion 61.

  Here, an example in which the heat dissipation member 30 and the collector terminal 50 (lead frame 200) are assembled so that the side surface 33 and the facing portion 52 and the side surface 33 and the facing portion 462 are in contact with each other is employed. Similarly, an example in which the heat dissipation member 20 and the emitter terminal 60 (a member that becomes the emitter terminal 60) are assembled so that the side surface 23 and the facing portion 62 are in contact with each other is employed.

  When performing this arrangement | positioning process, you may make it use a jig | tool (lower jig | tool 300a, upper jig | tool 300b) as shown in FIG. For example, a metal material can be used for the lower jig 300a and the upper jig 300b. The upper jig 300b corresponds to the jig in the present invention.

  First, the lower jig 300 a corresponds to the heat radiation member recess 310 that is recessed from the periphery corresponding to the planar shape of the heat dissipation member 30 and the shape of the lead frame 200 (the portion that is recessed relative to the connection portion 51). And a frame recess 320 that is recessed from the periphery. The heat dissipation member recess 310 and the frame recess 320 of the lower jig 300a are formed so that the collector terminal 50 and the heat dissipation member 30 are positioned in a state where the heat dissipation member 30 and the lead frame 200 are disposed. . That is, in a state where the heat dissipation member 30 and the lead frame 200 are disposed on the lower jig 300a, the connection portions 51 and 461 are opposed to each other in a planned connection area with the connection portions 51 and 461 on the surface of the heat dissipation member 30, and heat dissipation is performed. Opposing portions 52 and 462 are disposed in contact with the side surface 33 of the member 30.

  On the other hand, the upper jig 300 b encloses a region to be connected to the connection portion 51 in the heat dissipation member 30 in a direction along the connection surface with the connection portion 51 of the heat dissipation member 30. Therefore, the side surface of the upper jig 300b is provided with a terminal recess 330 that is recessed from the peripheral side surface at a portion where the connection portion 51 of the collector terminal 50 is disposed, and a portion where the connection portion 461 of the holding portion 46 is disposed. A holding portion recess 340 that is recessed from the peripheral side surface is provided. That is, the terminal concave portion 330 is a concave portion corresponding to the shape of the connecting portion 51, and the holding portion concave portion 340 is a concave portion corresponding to the shape of the holding portion 46. In other words, the upper jig 300b includes a terminal concave portion 330 whose side surface is recessed from the periphery corresponding to the shape of the connection portion 51, and a holding portion concave portion whose side surface is recessed from the periphery corresponding to the shape of the holding portion 46. 340.

  And when performing the above-mentioned arrangement process, as shown in Drawing 11 (a) and (b), while arranging heat dissipation member 30 in crevice 310 for heat dissipation members of lower jig 300a, The upper jig 300b is installed on the surface (installation process). That is, the upper jig 300b is installed on the connection surface side with the collector terminal 50 of the heat dissipation member 30 (installation step). At this time, the connection planned area | region with the connection parts 51 and 461 in the surface (connection surface 31) of the thermal radiation member 30 is exposed outside by the recessed part 330 for terminals, and the recessed part 340 for holding parts. On the other hand, the area other than the area scheduled to be connected to the connection portions 51 and 461 on the surface (connection surface 31) of the heat dissipation member 30 is covered with the upper jig 300b.

  Thereafter, as shown in FIGS. 11C and 11D, the conductive connection members 92 and 96 are disposed in the planned connection regions with the connection portions 51 and 461 on the surface (connection surface 31) of the heat dissipation member 30. Further, the lead frame 200 is disposed on the lower jig 300a. As a result, the conductive connection member 92 is sandwiched between the heat dissipation member 30 and the connection portion 51, the side surface 33 and the facing portion 52 are in contact, and the conductive connection member 96 is sandwiched between the heat dissipation member 30 and the connection portion 461. The side surface 33 and the facing portion 462 come into contact with each other, and the heat radiating member 30 and the collector terminal 50 (lead frame 200) are assembled (second step).

  Note that the jigs (upper jig and lower jig) as described above may also be used when the conductive connection member 95 and the emitter terminal 60 are disposed with respect to the heat dissipation member 20.

  Then, after this second step (that is, in a state where the second step is performed), the conductive connection members 92 and 95 are melted, and the heat radiation member 20 and the emitter terminal 60 (connection portion 61), and the heat radiation member 30 and the collector are collected. The terminal 50 (connection portion 51) is electrically connected (third step). At this time, the connecting portion 461 between the heat dissipation member 30 and the holding portion 46 is also mechanically connected by the conductive connecting member 96. That is, the lead frame 200 and the heat dissipation member 30 after the second step disposed via the conductive connection members 92 and 96, and the emitter terminal 60 after the second step disposed via the conductive connection member 95 The resulting member and the heat radiating member 20 are conveyed to a reflow furnace and a reflow process is performed. Thus, the first step, the second step, and the third step may be performed with the upper jig 300b installed. Note that the unit in which the heat radiating member 20 and the emitter terminal 60 (the member that becomes the emitter terminal 60) are integrated is also referred to as a second unit.

  As described above, by using the upper jig 300b, the foil-like conductive connection members 92 and 95 before melting are restricted from moving from the facing region between the heat radiation members 20 and 30 and the connection portions 51 and 61. it can. That is, movement in all directions (parallel directions) along the facing surface of the heat radiating members 20 and 30 with the connection portions 51 and 61 can be restricted. Therefore, it is possible to manufacture the semiconductor device 100 in which the electrical connection reliability between the emitter terminal 60 and the collector terminal 50 and the heat radiation members 20 and 30 is further improved.

  Thereafter, as shown in FIGS. 6A and 6B, the semiconductor chip 10 is mounted on the heat radiating member 30 via the foil-shaped conductive connection member 91, and the foil-shaped semiconductor chip 10 is mounted. A mounting process for mounting the block body 70 via the conductive connection member 93 is executed.

  That is, the foil-like conductive connection member 91 is disposed on the connection surface 31 of the heat dissipation member 30, and the semiconductor chip 10 is mounted on the conductive connection member 91. Further, a foil-like conductive connection member 93 is disposed on the opposite surface of the semiconductor chip 10 to the connection surface with the heat dissipation member 30, and the block body 70 is mounted on the conductive connection member 93. In this state, the conductive connection members 91 and 93 are melted to connect the collector terminal 50 and the semiconductor chip 10, and the semiconductor chip 10 and the block body 70. That is, in this state, it is transported to a reflow furnace and a reflow process is executed.

  Thereafter, the small current electrodes of the semiconductor chip 10 and the portions to be the small current terminals 41 to 45 of the lead frame are electrically connected by wires 41a to 45a. That is, the small current electrode of the semiconductor chip 10 and the lead frame connecting portions 441 to 451 are wire-bonded by the wires 41a to 45a. Note that the semiconductor chip 10, the heat dissipation member 30, the block body 70, the wires 41 a to 45 a, and the lead frame 200 are also referred to as a first unit.

  Thereafter, a foil-like conductive connection member 94 is disposed on the block body 70. That is, the foil-like conductive connection member 94 is arranged on the surface opposite to the connection surface with the semiconductor chip 10 in the block body 70. Then, as shown in FIGS. 7A and 7B, the first unit and the second unit are connected (assembly process). At this time, the first unit and the second unit are connected via the conductive connection member 94 disposed on the block body 70. That is, the second unit is placed on the first unit with the connection surface 21 of the heat dissipation member 20 and the conductive connection member 94 (block body 70) facing each other. Then, in a state where the second unit is mounted on the conductive connection member 94, the conductive connection member 94 is melted to connect the first unit and the second unit (assembly process). That is, in a state where the second unit is placed on the first unit, it is transported to the reflow furnace and the reflow process is executed. In addition, when arrange | positioning the electroconductive connection members 91, 93, and 94, it is desirable for the thermal radiation member 30 to be in the state in which the connection surface 31 has faced the direction opposite to gravity.

  Thereafter, as shown in FIGS. 8A and 8B, the first unit and the second unit connected by the conductive connecting member 94 are molded with a molding resin 80 (molding process). At this time, the heat radiation surfaces 22 and 32 of the heat radiation members 20 and 30, a part of the extension part 53 of the collector terminal 50 and a part of the extension part 63 of the emitter terminal 60 are exposed from the mold resin 80 to the outside. Mold. Then, as shown in FIGS. 9A and 9B, a cutting process for cutting the connecting portion 210 of the lead frame 200 is performed after the molding process. In this way, the semiconductor device 100 can be manufactured.

  As described above, when connecting the heat radiating member 30 and the collector terminal 50 (connecting portion 51) using a foil-like member such as a solder foil as the conductive connecting member 92, first, the heat radiating member 30 and the collector terminal 50 are connected to each other. A foil-like member is disposed in the opposite region. In this state, the heat radiating member 30 and the collector terminal 50 can be connected by melting the foil-like member (conductive connecting member 92). However, the foil-like member (conductive connection member 92) disposed in the region where the heat radiation member 30 and the collector terminal 50 are opposed to each other is not connected to the heat radiation member 30 and the collector terminal 50 through a molten state. . That is, the foil-like member (conductive connecting member 92) is merely in contact with the heat dissipation member 30 and the collector terminal 50.

  Therefore, when the second step described above is not performed, the foil-like member (conductive connecting member 92) may move in the parallel direction before the reflow step due to vibration or the like when transported to a reflow furnace or the like. There is. That is, it is conceivable that the heat radiation member 30 and the connection portion 51 are shifted from the facing region and partially protrude from the heat radiation member 30 and the connection portion 51.

  Thus, if the conductive connection member 92 moves before reflow, there is a possibility that the heat dissipation member 30 and the collector terminal 50 are not normally connected, resulting in poor connection. That is, an electrical connection region between the heat dissipation member 30 and the collector terminal 50 may be narrowed, or the heat dissipation member 30 and the collector terminal 50 may not be connected by the conductive connection member 92.

  However, in the manufacturing method of the semiconductor device 100 according to the present embodiment, the conductive connection member 92 before being connected to the heat dissipation member 30 or the connection portion 51 is dissipated by performing the third step after the second step as described above. It can restrict | limit that it moves to the opposing part 52 direction from the opposing area | region of the member 30 and the connection part 51. FIG. That is, even if the conductive connecting member 92 moves in the direction of the facing portion 52, the movement to the outside of the facing portion 52 is restricted by contacting the facing portion 52.

  Therefore, an electrical connection region between the heat dissipation member 30 and the collector terminal 50 or the heat dissipation member 20 and the emitter terminal 60 is narrowed, or the heat dissipation member 30 and the collector terminal 50 are not connected by the conductive connection member 92. Further, it is possible to prevent the heat radiating member 20 and the emitter terminal 60 from being connected by the conductive connecting member 95. Therefore, it is possible to manufacture a semiconductor device in which the electrical connection reliability between the collector terminal 50 and the heat dissipation member 30 and the electrical connection reliability between the emitter terminal 60 and the heat dissipation member 30 are improved.

  In particular, by bringing the side surface 33 of the heat radiating member 30 into contact with the facing portion 52, a gap between the side surface 33 of the heat radiating member 30 and the facing portion 52 can be eliminated. Therefore, the foil-like member before melting is preferable because it does not move between the side surface 33 of the heat radiating member 30 and the facing portion 52 even if it moves in the direction of the facing portion 52. Similarly, the distance between the side surface 33 of the heat radiating member 30 and the facing portion 52 is set to be equal to or less than the thickness of the foil-shaped member before melting. It is preferable because it does not move through the space. The same effect can be obtained on the side where the heat dissipation member 20 and the emitter terminal 60 are connected.

  Further, the collector terminal 50 has the facing portion 52 facing only one side surface 33 of the heat radiating member 30. That is, the facing portion 52 only protrudes along the one side surface 33 of the heat dissipation member 30 with respect to the connection portion 51. Therefore, the connection position of the collector terminal 50 with the heat dissipation member 30 is not limited to the corner of the heat dissipation member 30. Therefore, the freedom degree of the connection position with respect to the heat radiating member 30 of the collector terminal 50 can be improved. That is, the degree of freedom of the arrangement position of the collector terminal 50 in the semiconductor device 100 can be improved.

  For example, the mounting positions of the semiconductor device 100 and the external device on the attached body (for example, the vehicle body) may be determined. In such a case, when the position of the collector terminal 50 is limited (for example, limited to the corner of the heat dissipation member 30), the shape of the collector terminal 50 is used to electrically connect the semiconductor device 100 and the external device. Needs to have a shape corresponding to the positional relationship between the semiconductor device 100 and the external device. However, in the semiconductor device 100 according to the present embodiment, the degree of freedom of the arrangement position of the collector terminal 50 in the semiconductor device 100 can be improved, so that the degree of freedom of the shape of the collector terminal 50 can also be improved.

  It should be noted that the same effect (improvement of the degree of freedom of the connection position and improvement of the degree of freedom of the shape) can be achieved on the side where the heat radiating member 20 and the emitter terminal 60 are connected.

  In the present embodiment, as described above, the lead frame 200 is provided with a portion to be the collector terminal 50, and the emitter terminal 60 is a separate member from the lead frame 200, thereby collecting the collector terminal 50 and the emitter terminal 60. Is easy to manufacture. In other words, the collector terminal 50 and the emitter terminal 60 can be easily manufactured by making the member that becomes the collector terminal 50 (here, the lead frame 200) and the member that becomes the emitter terminal 60 separate. For example, in the case of the prior art (Patent Document 1), since the manufacturing is performed with one lead frame, it is necessary to bend the lead frame in the vertical direction (different directions), and the bending process becomes complicated. Further, the thickness of the heat radiating members 20 and 30 is different from that of the emitter terminal 60 and the collector terminal 50 (for example, when the thickness of the heat radiating members 20 and 30 is larger than that of the emitter terminal 60 and the collector terminal 50). When manufacturing 20, 30, the emitter terminal 60, and the collector terminal 50 with one lead frame, it is necessary to manufacture using a deformed strip. For this reason, there are restrictions on the thicknesses of the heat dissipating members 20 and 30, the emitter terminal 60, and the collector terminal 50, and the cost is increased.

On the other hand, in the manufacturing method of this embodiment, the bending process of the members that become the lead frame 200 and the emitter terminal 60 can be simplified by the above-described method. Furthermore, the prior art (Patent Document 1) requires three or more suspension terminals, but in the present embodiment, two holding portions 46 corresponding to the suspension terminals are sufficient, which is preferable. Further, since the heat dissipating members 20, 30 and the emitter terminal 60 and the collector terminal 50 are separate members, the thickness of each can be freely selected.

  Moreover, in the manufacturing method of this embodiment, since the positional relationship of the heat radiating members 20 and 30 and the emitter terminal 60 and the collector terminal 50 is decided by a single component, it is preferable. Further, it is preferable because the product tolerance of the semiconductor device 100 is determined only by the part tolerance (not including the jig tolerance). That is, by aligning the facing portion 62 of the heat dissipation member 20 and the emitter terminal 60 and the facing portion 52 of the heat dissipation member 30 and the collector terminal 50 (for example, the side surface of the heat dissipation member 30 and the facing portion 52 of the collector terminal 50 are The positional relationship of these components is determined by a single component, such as contacting the side surface of the heat radiating member 20 and the facing portion 62 of the collector terminal 60). Therefore, it is not necessary to align these parts with a jig (including positioning pins), and the jig can be made pinless, and the product tolerance is only the part tolerance.

  In this embodiment, foil-like conductive connection members 92 and 96 are disposed on the heat dissipation member 30, and the lead frame 200 (collector terminal 50, holding portion 46) is disposed on the conductive connection members 92 and 96. However, the present invention is not limited to this. Foil-like conductive connection members 92 and 96 are arranged on the lead frame 200 (a member to be the collector terminal 50) on which the facing portion 52 is formed, and the heat dissipation member 30 is arranged on the conductive connection members 92 and 96. You may do it.

  As described above, the connection surface 31 of the heat dissipation member 30 is a flat surface. Therefore, when the foil-like conductive connection members 92 and 96 are arranged on the heat dissipation member 30, the movement of the conductive connection members 92 and 96 in the parallel direction is not limited. In contrast, the lead frame 200 has a facing portion 52 formed after the bending process. Therefore, by disposing the foil-like conductive connection members 92 and 96 on the lead frame 200 after the bending step, the foil-like conductive connection members 92 and 96 are opposed to each other when they are arranged at the connection portion 51. The movement is limited by the part 52, which is preferable. When the conductive connection members 92 and 96 are disposed on the lead frame 200, the lead frame 200 is in a state where the surface on which the conductive connection members 92 and 96 are disposed faces in a direction opposite to gravity. And desirable.

  Similarly, the connection surface 21 of the heat radiating member 20 is a flat surface. Therefore, when the foil-like conductive connecting member 95 is disposed on the heat dissipation member 20, the movement of the conductive connecting member 95 in the parallel direction is not limited. On the other hand, if the member that becomes the emitter terminal 60 is after the bending step, a facing portion 62 is formed. Therefore, by disposing the foil-like conductive connection member 95 on the member that becomes the emitter terminal 60 after the bending step, the foil-like conductive connection member 95 is opposed to the opposing portion when the connection portion 61 is disposed. 62 is preferable because the movement is limited. When the conductive connection member 95 is disposed on the member to be the emitter terminal 60, the member to be the emitter terminal 60 is in a state where the surface on which the conductive connection member 95 is disposed is directed in a direction opposite to gravity. Is desirable.

  In the present embodiment, an example in which the collector terminal 50 (the facing portion 52 and the like) and the emitter terminal 60 (the facing portion 62 and the like) are manufactured by press working is adopted, but the present invention is not limited to this. In addition, it can be manufactured by various methods such as cutting and casting.

(Second Embodiment)
Next, a second embodiment of the present invention will be described based on FIGS. 12 (a), 12 (b), and 13. FIG. In the present embodiment, description of the same parts as those in the above-described embodiment will be omitted, and differences from the above-described embodiment will be mainly described. FIG. 12 (a) corresponds to FIG. 2 (a), and FIG. 12 (b) corresponds to FIG. 2 (b).

  In the above-described embodiment, the collector terminal 50 is connected to the heat dissipation member 30 and the conductive connection member 92 only at the connection portion 51. In addition, the emitter terminal 60 is connected to the heat radiating member 20 via the conductive connecting member 95 only at the connecting portion 61. However, the present invention is not limited to this.

  In the semiconductor device 100 of the second embodiment, as shown in FIG. 12A, the conductive connection member 92 that connects the heat dissipation member 30 and the connection portion 51 of the collector terminal 50 is the side surface of the heat dissipation member 30. 33 and between the opposing portion 52 of the collector terminal 50. The facing portion 52 of the collector terminal 50 is connected to the side surface 33 of the heat dissipation member 30 via the conductive connection member 92. That is, in the collector terminal 50, the connection portion 51 and the facing portion 52 are connected to the heat dissipation member 30 via the conductive connection member 92.

  Similarly, as shown in FIG. 12 (b), the conductive connection member 95 connecting the heat radiation member 20 and the connection portion 61 of the emitter terminal 60 is the opposite portion between the side surface 23 of the heat radiation member 20 and the emitter terminal 60. 62. The facing portion 62 of the emitter terminal 60 is connected to the side surface 23 of the heat dissipation member 20 via the conductive connection member 95. That is, in the emitter terminal 60, the connection portion 61 and the facing portion 62 are connected to the heat dissipation member 20 via the conductive connection member 95.

  Therefore, the heat radiating member 30 and the collector terminal 50 are electrically connected not only on one surface (connection surface 31) and the connecting portion 51 of the heat radiating member 30 but also on the side surface 33 of the heat radiating member 30 and the facing portion 51. Therefore, it is preferable because the connection area between the heat radiation member 30 and the collector terminal 50 can be increased as compared with the case where only one surface (connection surface 31) of the heat radiation member 30 and the connection portion 51 are electrically connected. Similarly, the heat radiating member 20 and the emitter terminal 60 are electrically connected not only to one surface (connecting surface 21) and the connecting portion 61 of the heat radiating member 20, but also to the side surface 23 of the heat radiating member 20 and the facing portion 61. Therefore, it is preferable because the connection region between the heat radiation member 20 and the emitter terminal 60 can be increased as compared with the case where only one surface (connection surface 21) of the heat radiation member 20 and the connection portion 61 are electrically connected. Note that the semiconductor device 100 according to the present embodiment can also achieve the effects of the above-described embodiments.

  Here, features of the method for manufacturing the semiconductor device 100 according to the present embodiment will be described. The manufacturing method on the side of the heat radiating member 30 and the lead frame 200 (the member that becomes the collector terminal 50) and the manufacturing method on the side of the heat radiating member 20 and the emitter terminal 60 (the member that becomes the emitter terminal 60) are the same. Therefore, here, the heat radiating member 30 and the lead frame 200 will be described.

  First, a gap S <b> 1 (less than the thickness of the conductive connecting member 92) is provided between the side surface 33 of the heat dissipation member 30 and the facing portion 52 of the lead frame 200, and the heat dissipation member 30 and the lead frame 200 (members that become the collector terminals 50). ) Is assembled (second step). That is, the heat radiating member 30 and the lead frame 200 are assembled with a gap equal to or smaller than the thickness of the conductive connecting member 92 between the side surface 33 and the facing portion 52 (second step). The heat dissipation member 30 and the lead frame 200 are assembled in a state where the conductive connection members 92 and 96 on the heat dissipation member 30 are arranged as described above. Further, the heat radiation member 30 and the lead frame 200 may be assembled by providing a gap S <b> 1 between the side surface 33 of the heat radiation member 30 and the facing portion 462 of the lead frame 200. Also in the present embodiment, as shown in FIG. 13, a lower jig 300a and an upper jig 300b may be used. In this case, the frame recess 320 is designed so that a gap S <b> 1 is formed between the side surface 33 of the heat dissipation member 30 and the facing portion 52 of the lead frame 200.

  Then, in this third state, with the heat dissipation member 30 and the lead frame 200 (members serving as the collector terminals 50) assembled, the conductive connection member 92 is melted and the heat dissipation member 30 and the lead frame are assembled. 200 (a member to be the collector terminal 50) is electrically connected.

  By doing so, the conductive connection member 92 in a molten state can be wetted and spread to the gap (gap S1) between the side surface 33 and the facing portion 52 by wicking. Therefore, it is preferable because the connection region between the heat dissipation member 30 and the collector terminal 50 can be increased as compared with the case where only one surface of the heat dissipation member 30 and the connection portion 51 are electrically connected. The same effect can be obtained even in the case of the heat radiating member 20 and the emitter terminal 60. Therefore, it is possible to manufacture the semiconductor device 100 in which the connection region between the heat dissipation member 30 and the collector terminal 50 and between the heat dissipation member 20 and the emitter terminal 60 is increased. Note that the method of manufacturing the semiconductor device 100 according to the present embodiment can also achieve the effects of the above-described embodiments.

(Third embodiment)
Next, a third embodiment of the present invention will be described with reference to FIGS. 14 (a) and 14 (b) and FIGS. 15 (a) to 15 (c). In the present embodiment, description of the same parts as those in the above-described embodiment will be omitted, and differences from the above-described embodiment will be mainly described. FIG. 14 (a) corresponds to FIG. 2 (a), and FIG. 14 (b) corresponds to FIG. 2 (b).

  As shown in FIG. 14A, the collector terminal 50 in the present embodiment has a through hole 52a. The through hole 52 a is provided in the opposite direction of the connection portion 51 with respect to the facing portion 52 in the longitudinal direction (the left-right direction on the paper surface) of the collector terminal 50. Similarly, the emitter terminal 60 has a through hole 62a as shown in FIG. The through hole 62 a is provided in the opposite direction of the connection portion 61 with respect to the facing portion 62 in the longitudinal direction of the emitter terminal 60 (left and right direction in the drawing). The through holes 52a and 62a are filled with the mold resin 80.

  Here, a method for manufacturing the collector terminal 50 and the emitter terminal 60 in the present embodiment will be described with reference to FIGS. 15A and 15B show only the collector terminal 50 portion of the lead frame 200, and are plan views of the collector terminal 50 on the side opposite to the connection surface with the heat radiation member 30. FIG. The manufacturing method of the collector terminal 50 and the manufacturing method of the emitter terminal 60 are the same. Therefore, here, the collector terminal 50 is employed for explanation.

  First, as shown in FIG. 15 (a), a cut is made at a position that partially surrounds the portion to be the facing portion 52. The part shown with the dotted line in Fig.15 (a) is an incision. That is, here, the U-shape is cut (more specifically, in FIG. 15A, the U-shape is cut by 180 degrees). In FIG. 15A, a single point transition and a broken line indicate a crease in the folding process. Specifically, the alternate long and short dash line is a valley fold portion that is bent so that the surface opposite to the connection surface of the collector terminal 50 to the heat radiating member 30 is a valley, while the broken line is the radiating member 30 of the collector terminal 50. This is a mountain fold portion that is bent so that the opposite surface of the connection surface is a mountain.

  Next, the lead frame 200 (a member that becomes the collector terminal 50) is bent along the one-dot chain line and the broken line in FIG. As a result, as shown in FIGS. 15B and 15C, the connecting portion 51, the facing portion 52, and the through hole 52a are formed.

  By doing in this way, the same effect as 1st Embodiment can be produced, reducing the number of bending and total weight rather than the collector terminal 50 (namely, lead frame 200) in the above-mentioned 1st Embodiment. . Further, the same effect can be obtained with respect to the emitter terminal 60 (that is, the member that becomes the emitter terminal 60).

  Also in this embodiment, the technique shown in the second embodiment may be applied. That is, the collector terminal 50 has the connecting portion 51 and the facing portion 52 connected to the heat dissipation member 30 via the conductive connecting member 92, and the emitter terminal 60 has the connecting portion 61 and the facing portion 62 having the conductive connecting member 95. You may make it connect to the heat radiating member 20 via this. As a result, the semiconductor device 100 according to the present embodiment can also achieve the effects of the second embodiment described above.

(Fourth embodiment)
Next, a fourth embodiment of the present invention will be described based on FIGS. 16 (a) and 16 (b). In the present embodiment, description of the same parts as those in the above-described embodiment will be omitted, and differences from the above-described embodiment will be mainly described. FIG. 16 (a) corresponds to FIG. 2 (a), and FIG. 16 (b) corresponds to FIG. 2 (b).

  As shown in FIG. 16A, the heat radiating member 30 in the present embodiment has a portion 34 (hereinafter referred to as a recess 34) that is recessed from the periphery at the edge on the surface (connection surface 31) side facing the semiconductor chip 10. Also called). The heat radiating member 30 and the collector terminal 50 are connected to the bottom surface of the recess 34 on one surface of the heat radiating member 30 by the conductive connecting member 92. That is, the region facing the connecting portion 51 of the collector terminal 50 in the heat radiating member 30 (that is, the region where the conductive connecting member 92 is disposed) is a portion 34 that is recessed from the periphery. The recess 34 has a size (width in the parallel direction) according to the physique in the parallel direction of the connecting portion 51, and has a depth that is the sum of the thickness of the connecting portion 51 and the thickness of the conductive connecting member 92. Have.

  Similarly, as shown in FIG. 16B, the heat radiating member 20 includes a portion 24 (hereinafter referred to as a recess 24) that is recessed from the periphery on the edge on the surface (connection surface 21) facing the semiconductor chip 10. Called). The heat radiating member 20 and the emitter terminal 60 are connected to the bottom surface of the recess 24 on one surface of the heat radiating member 20 and the connection portion 61 by a conductive connecting member 95. That is, the region of the heat radiating member 20 that faces the connecting portion 61 of the emitter terminal 60 (that is, the region where the conductive connecting member 95 is disposed) is a portion 24 that is recessed from the periphery. The recess 24 has a size (width in the parallel direction) according to the physique in the parallel direction of the connection portion 61, and has a depth that is the sum of the thickness of the connection portion 61 and the thickness of the conductive connection member 95. Have.

  As a result, the same effects as those of the first embodiment can be obtained, and the foil-like conductive connection members 92 and 95 before melting can be opposed to the region where the heat dissipation member 30 and the connection portion 51 face each other or the heat dissipation member 20 and the connection portion 61. It can restrict | limit from the opposing area | region (after a 2nd process). That is, movement in all directions (parallel directions) along the facing surface of the heat radiating members 20 and 30 with the connection portions 51 and 61 can be restricted.

  Therefore, the electrical connection reliability between the collector terminal 50 and the heat dissipation member 30 can be further improved. In addition, the semiconductor device 100 in which the electrical connection reliability between the collector terminal 50 and the heat dissipation member 30 is further improved can be manufactured. Similarly, the electrical connection reliability between the emitter terminal 60 and the heat dissipation member 20 can be further improved. In addition, the semiconductor device 100 in which the electrical connection reliability between the emitter terminal 60 and the heat dissipation member 20 is further improved can be manufactured.

  In this way, when the heat radiating members 20 and 30 are electrically connected to both surfaces of the semiconductor chip 10 and the emitter terminal 60 and the collector terminal 50 are connected to the heat radiating members 20 and 30, respectively, 51 may be connected to the mutually opposing surfaces of the heat dissipation members 20 and 30. In such a case, as shown in the present embodiment, the connection portions 61 and 51 are connected to the recessed portions 24 and 34 of the heat dissipation members 20 and 30 to widen the interval between the heat dissipation members 20 and 30. Can do. Therefore, the mold resin 80 can easily enter between the heat radiating members 20 and 30.

  Also in this embodiment, the technique shown in the second embodiment may be applied. That is, the collector terminal 50 has the connecting portion 51 and the facing portion 52 connected to the heat dissipation member 30 via the conductive connecting member 92, and the emitter terminal 60 has the connecting portion 61 and the facing portion 62 having the conductive connecting member 95. You may make it connect to the heat radiating member 20 via this. As a result, the semiconductor device 100 according to the present embodiment can also achieve the effects of the second embodiment described above.

  Also in the present embodiment, the technique shown in the third embodiment described above may be applied. That is, the collector terminal 50 and the emitter terminal 60 may include opposing portions 52 and 62 formed by cutting and bending. Thereby, the semiconductor device 100 according to the present embodiment can also achieve the effects of the third embodiment described above.

(Fifth embodiment)
Next, a fifth embodiment of the present invention will be described based on FIGS. 17 (a) and 17 (b). In the present embodiment, description of the same parts as those in the above-described embodiment will be omitted, and differences from the above-described embodiment will be mainly described. FIG. 17 (a) corresponds to FIG. 2 (a), and FIG. 17 (b) corresponds to FIG. 2 (b).

  As shown in FIG. 17A, the heat radiating member 30 in the present embodiment is a portion 35 that is recessed from the periphery at the edge on the side opposite to the surface 31 facing the semiconductor chip 10 (ie, the heat radiating surface 32). (Hereinafter also referred to as a recess 35). The heat radiating member 30 and the collector terminal 50 are connected to the bottom surface of the recess 35 on the heat radiating surface 32 side of the heat radiating member 30 and the connecting portion 51 by the conductive connecting member 92. That is, the region facing the connecting portion 51 of the collector terminal 50 in the heat radiating member 30 (that is, the region where the conductive connecting member 92 is disposed) is a portion 35 that is recessed from the periphery. The recess 35 has a size (width in the parallel direction) according to the physique in the parallel direction of the connection portion 51, and has a depth that is the sum of the thickness of the connection portion 51 and the thickness of the conductive connection member 92. Have.

  Similarly, as shown in FIG. 17B, the heat radiation member 20 has a portion 25 (which is recessed from the periphery on the edge on the side opposite to the surface 21 facing the semiconductor chip 10 (that is, the heat radiation surface 22). Hereinafter, it is also referred to as a recess 25). The heat radiating member 20 and the emitter terminal 60 are connected to the bottom surface of the recess 25 on the heat radiating surface 22 side of the heat radiating member 20 and the connecting portion 61 by the conductive connecting member 95. That is, a region of the heat radiating member 20 that faces the connecting portion 61 of the emitter terminal 60 (that is, a region where the conductive connecting member 95 is disposed) is a portion 25 that is recessed from the periphery. The recess 25 has a size (width in the parallel direction) according to the physique in the parallel direction of the connecting portion 61, and has a depth that is the sum of the thickness of the connecting portion 61 and the thickness of the conductive connecting member 95. Have.

  As a result, the same effects as those of the first embodiment can be obtained, and the foil-like conductive connection members 92 and 95 before melting can be moved from the facing region between the heat radiation members 20 and 30 and the connection portions 51 and 61. Can be limited (after the second step). That is, movement in all directions (parallel directions) along the facing surface of the heat radiating members 20 and 30 with the connection portions 51 and 61 can be restricted.

  Therefore, the electrical connection reliability between the collector terminal 50 and the heat dissipation member 30 can be further improved. In addition, the semiconductor device 100 in which the electrical connection reliability between the collector terminal 50 and the heat dissipation member 30 is further improved can be manufactured. Similarly, the electrical connection reliability between the emitter terminal 60 and the heat dissipation member 20 can be further improved. In addition, the semiconductor device 100 in which the electrical connection reliability between the emitter terminal 60 and the heat dissipation member 20 is further improved can be manufactured. In this way, the mold resin 80 can easily enter between the heat radiating members 20 and 30 as well.

  Moreover, by doing in this way, it is possible to easily determine whether the conductive connection members 92 and 95 are connected or not in the appearance inspection before the molding with the molding resin 80. This is particularly effective when the heat radiating members 20 and 30 are electrically connected to both surfaces of the semiconductor chip 10 and the emitter terminal 60 and the collector terminal 50 are connected to the heat radiating members 20 and 30, respectively.

  Furthermore, by doing in this way, it can suppress or prevent that the connection parts 51 and 61 protrude from the thermal radiation members 20 and 30. FIG. In addition, the connection portion between the heat dissipation member 30 and the conductive connection member 92 and the connection portion between the connection portion 51 and the conductive connection member 92 can be easily covered with the mold resin 80. Therefore, it can suppress that the connection part of the heat radiating member 30 and the collector terminal 50 is exposed to the exterior of the mold resin 80, and can further improve the electrical connection reliability of the collector terminal 50 and the heat radiating member 30. . In addition, the semiconductor device 100 in which the electrical connection reliability between the collector terminal 50 and the heat dissipation member 30 is further improved can be manufactured.

  Similarly, the connection portion between the heat dissipation member 20 and the conductive connection member 95 and the connection portion between the connection portion 61 and the conductive connection member 95 can be easily covered with the mold resin 80. Therefore, it can suppress that the connection part of the heat radiating member 20 and the emitter terminal 60 is exposed to the exterior of the mold resin 80, and can improve the electrical connection reliability of the emitter terminal 60 and the heat radiating member 20 further. . In addition, the semiconductor device 100 in which the electrical connection reliability between the emitter terminal 60 and the heat dissipation member 20 is further improved can be manufactured.

  As a modification of the present embodiment, the concave portion 35 is not provided in the heat radiating member 30, and the connection portion 51 of the collector terminal 50 is opposite to the surface 31 of the heat radiating member 30 facing the semiconductor chip 10 (that is, It may be connected to the heat radiating surface 32). Similarly, the connecting portion 61 of the emitter terminal 60 is connected to the surface of the heat dissipation member 20 opposite to the surface 21 facing the semiconductor chip 10 (that is, the heat dissipation surface 22) without providing the recess 25 in the heat dissipation member 20. You may do it.

  Also by doing in this way, it is possible to easily determine the connection / non-connection of the conductive connection members 92 and 95 by the appearance inspection at a stage before molding with the mold resin 80. This is particularly effective when the heat radiating members 20 and 30 are electrically connected to both surfaces of the semiconductor chip 10 and the emitter terminal 60 and the collector terminal 50 are connected to the heat radiating members 20 and 30, respectively.

  Also in this embodiment, the technique shown in the second embodiment may be applied. That is, the collector terminal 50 has the connecting portion 51 and the facing portion 52 connected to the heat dissipation member 30 via the conductive connecting member 92, and the emitter terminal 60 has the connecting portion 61 and the facing portion 62 having the conductive connecting member 95. You may make it connect to the heat radiating member 20 via this. As a result, the semiconductor device 100 according to the present embodiment can also achieve the effects of the second embodiment described above.

  Also in the present embodiment, the technique shown in the third embodiment described above may be applied. That is, the collector terminal 50 and the emitter terminal 60 may include opposing portions 52 and 62 formed by cutting and bending. Thereby, the semiconductor device 100 according to the present embodiment can also achieve the effects of the third embodiment described above.

(Sixth embodiment)
Next, based on FIG. 18, FIG. 19 (a), (b), 6th Embodiment of this invention is described. In the present embodiment, description of the same parts as those in the above-described embodiment will be omitted, and differences from the above-described embodiment will be mainly described. FIG. 18 corresponds to FIG. 1 described above. 19A corresponds to FIG. 2A described above, and FIG. 19B corresponds to FIG. 2B.

  As shown in FIGS. 18, 19 (a), and 19 (b), in this embodiment, the collector terminal 50 is provided for two different sides of the heat dissipation member 30. That is, the semiconductor device 100 according to this embodiment includes two collector terminals 50. Each collector terminal 50 is connected to two different sides of the heat dissipation member 30. Meanwhile, only one emitter terminal 60 is provided as in the above-described embodiment. The effect in the first embodiment described above can also be achieved by doing in this way.

  Also in this embodiment, the technique shown in the second embodiment may be applied. That is, the collector terminal 50 has the connecting portion 51 and the facing portion 52 connected to the heat dissipation member 30 via the conductive connecting member 92, and the emitter terminal 60 has the connecting portion 61 and the facing portion 62 having the conductive connecting member 95. You may make it connect to the heat radiating member 20 via this. As a result, the semiconductor device 100 according to the present embodiment can also achieve the effects of the second embodiment described above.

  Also in the present embodiment, the technique shown in the third embodiment described above may be applied. That is, the collector terminal 50 and the emitter terminal 60 may include opposing portions 52 and 62 formed by cutting and bending. Thereby, the semiconductor device 100 according to the present embodiment can also achieve the effects of the third embodiment described above.

  Also in this embodiment, the technique shown in the above-described fourth embodiment may be applied. That is, the heat radiating member 30 and the collector terminal 50 are connected to the bottom surface of the recess 34 on one surface of the heat radiating member 30 by the conductive connecting member 92, and the heat radiating member 20 and the emitter terminal 60 are connected to the heat radiating member 20. The bottom surface of the recess 24 on one surface and the connection portion 61 may be connected by the conductive connection member 95. As a result, the semiconductor device 100 according to the present embodiment can also achieve the effects of the fourth embodiment described above.

  Also in the present embodiment, the technique shown in the fifth embodiment described above may be applied. That is, the heat radiation member 30 and the collector terminal 50 are connected to the bottom surface of the recess 35 in the heat radiation surface 32 of the heat radiation member 30 and the connection portion 51 by the conductive connection member 92, and the heat radiation member 20 and the emitter terminal 60 are The bottom surface of the recess 25 in the heat radiation surface 22 of the member 20 and the connection portion 61 may be connected by the conductive connection member 95. As a result, the semiconductor device 100 according to the present embodiment can also achieve the effects of the fifth embodiment described above.

  Note that the semiconductor device 100 according to the present embodiment may include one collector terminal 50 and two emitter terminals 60. That is, in the semiconductor device 100 according to the present embodiment, the two emitter terminals 60 may be connected to two different sides of the heat dissipation member 20. In this case, only one collector terminal 50 is provided as in the first to fifth embodiments described above.

(Seventh embodiment)
Here, based on FIG. 20, FIG. 21 (a), (b), 7th Embodiment of this invention is described. In the present embodiment, description of the same parts as those in the above-described embodiment will be omitted, and differences from the above-described embodiment will be mainly described. FIG. 20 corresponds to FIG. 1 described above. FIG. 21 (a) corresponds to FIG. 2 (a) described above, and FIG. 21 (b) corresponds to FIG. 2 (b).

  As shown in FIGS. 20, 21 (a), and 21 (b), in this embodiment, the collector terminal 50 is provided for two different sides of the heat dissipation member 30, and the emitter terminal 60 is the heat dissipation member 20. Are provided for two different sides. That is, the semiconductor device 100 in this embodiment includes two collector terminals 50 and two emitter terminals 60. Each collector terminal 50 is connected to two different sides of the heat dissipation member 30, and each emitter terminal 60 is connected to two different sides of the heat dissipation member 20. The effect in the first embodiment described above can also be achieved by doing in this way.

  Also in this embodiment, the technique shown in the second embodiment may be applied. That is, the collector terminal 50 has the connecting portion 51 and the facing portion 52 connected to the heat dissipation member 30 via the conductive connecting member 92, and the emitter terminal 60 has the connecting portion 61 and the facing portion 62 having the conductive connecting member 95. You may make it connect to the heat radiating member 20 via this. As a result, the semiconductor device 100 according to the present embodiment can also achieve the effects of the second embodiment described above.

  Also in the present embodiment, the technique shown in the third embodiment described above may be applied. That is, the collector terminal 50 and the emitter terminal 60 may include opposing portions 52 and 62 formed by cutting and bending. Thereby, the semiconductor device 100 according to the present embodiment can also achieve the effects of the third embodiment described above.

  Also in this embodiment, the technique shown in the above-described fourth embodiment may be applied. That is, the heat radiating member 30 and the collector terminal 50 are connected to the bottom surface of the recess 34 on one surface of the heat radiating member 30 by the conductive connecting member 92, and the heat radiating member 20 and the emitter terminal 60 are connected to the heat radiating member 20. The bottom surface of the recess 24 on one surface and the connection portion 61 may be connected by the conductive connection member 95. As a result, the semiconductor device 100 according to the present embodiment can also achieve the effects of the fourth embodiment described above.

  Also in the present embodiment, the technique shown in the fifth embodiment described above may be applied. That is, the heat radiation member 30 and the collector terminal 50 are connected to the bottom surface of the recess 35 in the heat radiation surface 32 of the heat radiation member 30 and the connection portion 51 by the conductive connection member 92, and the heat radiation member 20 and the emitter terminal 60 are The bottom surface of the recess 25 in the heat radiation surface 22 of the member 20 and the connection portion 61 may be connected by the conductive connection member 95. As a result, the semiconductor device 100 according to the present embodiment can also achieve the effects of the fifth embodiment described above.

  In the present embodiment, the two collector terminals 50 are provided for one side of the heat dissipation member 30, and the two emitter terminals 60 are provided for one side of the heat dissipation member 20. Good.

  In the above-described first to seventh embodiments, an example in which the heat dissipation members 20 and 30 are provided on both surfaces of the semiconductor chip 10 is adopted, but the present invention is not limited to this. Even if the heat radiating member is provided only on one side of the semiconductor chip 10, the object of the present invention can be achieved.

  As mentioned above, although preferable embodiment of this invention was described, this invention is not restrict | limited to the embodiment mentioned above at all, and various deformation | transformation are possible in the range which does not deviate from the meaning of this invention.

  DESCRIPTION OF SYMBOLS 10 Semiconductor chip, 20, 30 Heat radiation member, 21,31 Connection surface, 22,32 Heat radiation surface, 23,33 Side surface, 24,25,34,35 Recessed part (recess), 41-45 Terminal for small current, 411 ~ 451 Bonding part, 41a ~ 45a wire, 46 holding part, 461 connecting part, 462 opposing part, 50 collector terminal, 51 connecting part, 52 opposing part, 52a through hole, 53 extending part, 60 emitter terminal, 61 connecting part , 62 Opposing part, 63 Extension part, 70 Block body, 80 Mold resin, 91-98 Conductive connection member, 100 Semiconductor device, 200 Lead frame, 210 Connecting part, 300a Lower jig, 300b Upper jig, 310 Heat dissipation Recess for member, 320 recess for frame, 330 terminal recess, 340 holder recess, S1 gap

Claims (10)

A semiconductor chip (10);
A heat dissipation member (20, 30) electrically connected to the semiconductor chip (10);
External connection terminals (50, 60) electrically connected by the heat dissipation members (20, 30) and the conductive connection members (92, 95);
A semiconductor device comprising: the semiconductor chip (10); the heat dissipation member (20, 30); and the insulating resin (80) for integrally molding the external connection terminals (50, 60),
A part of the external connection terminals (50, 60) and a part of the heat dissipation member (20, 30) are exposed to the outside of the insulating resin (80),
The external connection terminals (50, 60) are
Connection portions (51, 61) connected to one surface of the heat dissipation member (20, 30) by the conductive connection members (92, 95);
Extending portions (53, 63) extending continuously from the connecting portions (51, 61) to the outside of the insulating resin (80),
The extension portion (53, 63) is bent from the connection portion (51, 61) and is opposed to one side surface (23, 33) of the heat radiating member (20, 30). ) Is provided. The conductive connection members (92, 95) that electrically connect the heat dissipating members (20, 30) and the connecting portions (51, 61) include the opposing portions (52, 62) and the heat dissipating members ( 20, 30) between the side surfaces (23, 33),
The said opposing part (52,62) is connected to the said side surface (23,33) of the said heat radiating member (20,30) by the said electroconductive connection member (92,95). 2. The semiconductor device according to 1. The semiconductor chip (10) is one in which the heat dissipating member (20, 30) is electrically connected to both sides,
The external connection terminals (50, 60) include two external connection terminals (50, 60) connected to the heat radiating members (20, 30), respectively. The semiconductor device described. The heat radiating member (20, 30) has a portion (24, 34) that is recessed from the periphery at the edge on the surface (21, 31) side facing the semiconductor chip (10),
The said connection part (51, 61) is connected to this recessed part (24, 34) by the said electroconductive connection member (92, 95), The any one of Claim 1 thru | or 3 characterized by the above-mentioned. A semiconductor device according to 1.   The connection portions (51, 61) of the external connection terminals (50, 60) are opposite surfaces of the surfaces (21, 31) facing the semiconductor chip (10) of the heat dissipation member (20, 30). The semiconductor device according to claim 1, wherein the semiconductor device is connected to (22, 32). The heat radiating member (20, 30) has a portion (25, 35) that is recessed from the periphery at the edge on the opposite surface (22, 32) side,
6. The semiconductor device according to claim 5, wherein the connection portion (51, 61) is connected to the recessed portion (25, 35) by the conductive connection member (92, 95). A semiconductor chip (10);
A heat dissipation member (20, 30) electrically connected to the semiconductor chip (10);
External connection terminals (50, 60) electrically connected by the heat dissipation members (20, 30) and the conductive connection members (92, 95);
A method of manufacturing a semiconductor device comprising: the semiconductor chip (10); the heat dissipation member (20, 30); and an insulating resin (80) for integrally molding the external connection terminals (50, 60). ,
A part of the external connection terminals (50, 60) and a part of the heat dissipation member (20, 30) are exposed to the outside of the insulating resin (80),
The external connection terminals (50, 60) are
Connection portions (51, 61) connected to one surface of the heat dissipation member (20, 30) by the conductive connection members (92, 95);
Extending portions (53, 63) extending continuously from the connecting portions (51, 61) to the outside of the insulating resin (80),
The extension portion (53, 63) is bent from the connection portion (51, 61) and is opposed to one side surface (23, 33) of the heat radiating member (20, 30). )
A first step of disposing the foil-like conductive connection member (92, 95) at a connection position between the heat dissipation member (20, 30) and the external connection terminal (50, 60);
After the first step, while sandwiching the conductive connection member (92, 95) between the heat dissipation member (20, 30) and the connection portion (51, 61), the side surface (23, 33) and the facing portion ( 52, 62) facing each other and assembling the heat radiating member (20, 30) and the external connection terminal (50, 60),
After the second step, the conductive connecting member (92, 95) is melted to electrically connect the heat radiating member (20, 30) and the external connection terminal (50, 60). When,
A method for manufacturing a semiconductor device, comprising:   In the second step, the side surfaces (23, 33) and the facing portions (52, 62) are assembled so as to have a gap equal to or less than the thickness of the conductive connection member (92, 95). A method for manufacturing a semiconductor device according to claim 7. A region where the heat radiation member (20, 30) is to be connected to the connection portion (51, 61) is enclosed in a direction along a connection surface of the heat radiation member (20, 30) with the connection portion (51, 61). Using a jig,
An installation step of installing the jig on the connection surface side of the heat dissipation member (20, 30);
9. The method of manufacturing a semiconductor device according to claim 7, wherein the first step, the second step, and the third step are performed in a state where the jig is installed.   A bending step of bending the members to be the external connection terminals (50, 60) to form the connection portions (51, 61), the facing portions (52, 62), and the extending portions (53, 63). The method for manufacturing a semiconductor device according to claim 7, further comprising:

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