JP5585966B2 - 光電変換装置、光検出装置、及び光検出方法 - Google Patents
光電変換装置、光検出装置、及び光検出方法 Download PDFInfo
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- JP5585966B2 JP5585966B2 JP2011529941A JP2011529941A JP5585966B2 JP 5585966 B2 JP5585966 B2 JP 5585966B2 JP 2011529941 A JP2011529941 A JP 2011529941A JP 2011529941 A JP2011529941 A JP 2011529941A JP 5585966 B2 JP5585966 B2 JP 5585966B2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/20—Light-sensitive devices
- H01G9/2027—Light-sensitive devices comprising an oxide semiconductor electrode
- H01G9/2031—Light-sensitive devices comprising an oxide semiconductor electrode comprising titanium oxide, e.g. TiO2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/20—Light-sensitive devices
- H01G9/2022—Light-sensitive devices characterized by he counter electrode
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/60—Electrodes characterised by their materials
- H10D64/64—Electrodes comprising a Schottky barrier to a semiconductor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/20—Electrodes
- H10F77/206—Electrodes for devices having potential barriers
- H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/542—Dye sensitized solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Hybrid Cells (AREA)
- Photovoltaic Devices (AREA)
Description
「Nakato, Y.; Shioji, M.; Tsubomura, H. “Photoeffects on the Potentials of Thin Metal-Films on a n-TiO2 CrystalWafer - The Mechanism of Semiconductor Photocatalysts.” Chem. Phys. Lett. 1982, 90, 453-456.」;
「Nakato, Y.; Tsubomura, H. “Structures and Functions of Thin Metal Layers on Semiconductor Electrodes.” J. Photochem. 1985, 29, 257-286.」
Claims (6)
- 単結晶酸化チタンを含む基板と、
前記基板の表面上に形成された金属薄膜である密着層と、
前記密着層の表面上に所定の間隔で所定方向に沿って配置された体積が1,000nm3以上3,000,000nm3以下の金属構造体と、
前記基板の表面上の前記金属構造体の配置領域に電解質溶液を収容する容器と、
前記基板の裏面に形成された導電層と、
前記容器内の前記電解質溶液に接触する対電極と、
を備え、
前記金属構造体は、前記密着層を介して前記基板に付着されており、
前記基板の金属構造体との界面には、ショットキーバリアが形成されており、
プラズモン共鳴現象によって赤外領域の光に対して光電変換を行う、
ことを特徴とする光電変換装置。 - 前記対電極は、前記基板の表面上の前記金属構造体に対向するように設けられた平板状の透明電極である、
ことを特徴とする請求項1記載の光電変換装置。 - 前記容器内の前記電解質溶液中に挿入された参照電極をさらに備える、
ことを特徴とする請求項1又は2記載の光電変換装置。 - 前記金属構造体は、前記表面上において第1の方向及び前記第1の方向に垂直な第2の方向に沿って、2次元的に配列されている、
ことを特徴とする請求項1〜3のいずれか1項に記載の光電変換装置。 - 請求項1記載の光電変換装置と、
前記導電層及び前記対電極に接続された電気計測器と、
を備えることを特徴とする光検出装置。 - 所定の間隔で所定方向に沿って体積が1,000nm3以上3,000,000nm3以下の金属構造体が、金属薄膜である密着層を介して付着されることにより配置された単結晶酸化チタンを含む基板の表面上に、電解質溶液を収容した状態で光を照射させるステップと、
前記電解質溶液に接触する対電極と、前記基板の裏面に形成された導電層との間に生成される光電流を検出するステップと、
を備え、
前記基板の金属構造体との界面には、ショットキーバリアが形成されており、
プラズモン共鳴現象によって赤外領域の光に対して光電変換を行う
ことを特徴とする光検出方法。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011529941A JP5585966B2 (ja) | 2009-09-07 | 2010-09-02 | 光電変換装置、光検出装置、及び光検出方法 |
Applications Claiming Priority (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2009205959 | 2009-09-07 | ||
| JP2009205959 | 2009-09-07 | ||
| JP2010053093 | 2010-03-10 | ||
| JP2010053093 | 2010-03-10 | ||
| PCT/JP2010/065052 WO2011027830A1 (ja) | 2009-09-07 | 2010-09-02 | 光電変換装置、光検出装置、及び光検出方法 |
| JP2011529941A JP5585966B2 (ja) | 2009-09-07 | 2010-09-02 | 光電変換装置、光検出装置、及び光検出方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPWO2011027830A1 JPWO2011027830A1 (ja) | 2013-02-04 |
| JP5585966B2 true JP5585966B2 (ja) | 2014-09-10 |
Family
ID=43649364
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2011529941A Expired - Fee Related JP5585966B2 (ja) | 2009-09-07 | 2010-09-02 | 光電変換装置、光検出装置、及び光検出方法 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US9240286B2 (ja) |
| JP (1) | JP5585966B2 (ja) |
| WO (1) | WO2011027830A1 (ja) |
Families Citing this family (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2011115550A (ja) * | 2009-10-26 | 2011-06-16 | Olympus Corp | 血圧センサシステム |
| JP5979932B2 (ja) * | 2011-03-31 | 2016-08-31 | 住友化学株式会社 | 有機エレクトロルミネッセンス素子 |
| JP6018774B2 (ja) | 2011-03-31 | 2016-11-02 | 住友化学株式会社 | 金属系粒子集合体 |
| JP6125758B2 (ja) * | 2011-03-31 | 2017-05-10 | 住友化学株式会社 | 光学素子 |
| JP6085095B2 (ja) | 2011-03-31 | 2017-02-22 | 住友化学株式会社 | 光学素子 |
| US9257662B2 (en) | 2011-10-03 | 2016-02-09 | Sumitomo Chemical Company, Limited | Quantum dot light-emitting device |
| JP6373552B2 (ja) * | 2011-10-26 | 2018-08-15 | 住友化学株式会社 | 光電変換素子 |
| US9263630B2 (en) | 2012-03-27 | 2016-02-16 | Sumitomo Chemical Company, Limited | Inorganic layer light-emitting device |
| JP6256902B2 (ja) * | 2012-09-06 | 2018-01-10 | 国立大学法人北海道大学 | 光電変換装置及び光電変換装置の製造方法 |
| JP6018857B2 (ja) | 2012-09-18 | 2016-11-02 | 住友化学株式会社 | 金属系粒子集合体 |
| JP6230039B2 (ja) * | 2013-03-05 | 2017-11-15 | 国立大学法人北海道大学 | 水素発生装置及び水素発生方法 |
| JP2014192387A (ja) * | 2013-03-27 | 2014-10-06 | Equos Research Co Ltd | 光電変換素子用部材 |
| JP2014192388A (ja) * | 2013-03-27 | 2014-10-06 | Equos Research Co Ltd | 光電変換素子用部材 |
| ITCB20130004A1 (it) * | 2013-05-17 | 2014-11-18 | Lucia Nole | Soluzione fotovoltaica |
| JP6366287B2 (ja) * | 2014-02-06 | 2018-08-01 | 国立大学法人北海道大学 | アンモニア発生装置及びアンモニア発生方法 |
| US10656466B2 (en) * | 2016-01-27 | 2020-05-19 | Sharp Kabushiki Kaisha | Wavelength conversion substrate, liquid-crystal element, liquid-crystal module, and liquid-crystal display device |
| JP7084020B2 (ja) * | 2018-01-19 | 2022-06-14 | 国立大学法人電気通信大学 | 分光用デバイス、分光器、及び分光測定方法 |
| JP7445234B2 (ja) * | 2019-02-20 | 2024-03-07 | 国立大学法人横浜国立大学 | 赤外線吸収体および赤外線吸収体を備えるガスセンサ |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2666889B2 (ja) * | 1995-03-27 | 1997-10-22 | 工業技術院長 | 光電変換方法および光電変換素子 |
| JP3369439B2 (ja) * | 1997-06-05 | 2003-01-20 | 科学技術振興事業団 | 光応答電極および湿式太陽電池 |
| JP4514251B2 (ja) | 1999-07-21 | 2010-07-28 | 住友金属鉱山株式会社 | 色素増感型太陽電池 |
| JP4639481B2 (ja) * | 2001-01-30 | 2011-02-23 | 住友金属鉱山株式会社 | 複合型太陽電池 |
| KR20030047567A (ko) * | 2001-12-11 | 2003-06-18 | 한국전자통신연구원 | 표면 플라즈몬 공명 센서 시스템 |
| JP4088711B2 (ja) | 2002-09-13 | 2008-05-21 | ソニー株式会社 | 光電変換素子及びその製造方法、並びに光センサ及び太陽電池 |
| WO2004108589A2 (en) * | 2003-01-21 | 2004-12-16 | The Penn State Research Foundation | Nanoparticle coated nanostructured surfaces for detection, catalysis and device applications |
| JP2007073794A (ja) | 2005-09-08 | 2007-03-22 | Univ Of Tokyo | プラズモン共鳴型光電変換素子及びその製造方法 |
| JP2009070768A (ja) * | 2007-09-18 | 2009-04-02 | Nippon Shokubai Co Ltd | 光電変換素子とその製造方法 |
| US8309185B2 (en) * | 2010-05-04 | 2012-11-13 | National Tsing Hua University | Nanoparticle film and forming method and application thereof |
-
2010
- 2010-09-02 JP JP2011529941A patent/JP5585966B2/ja not_active Expired - Fee Related
- 2010-09-02 US US13/394,528 patent/US9240286B2/en not_active Expired - Fee Related
- 2010-09-02 WO PCT/JP2010/065052 patent/WO2011027830A1/ja not_active Ceased
Also Published As
| Publication number | Publication date |
|---|---|
| US9240286B2 (en) | 2016-01-19 |
| US20120325301A1 (en) | 2012-12-27 |
| JPWO2011027830A1 (ja) | 2013-02-04 |
| WO2011027830A1 (ja) | 2011-03-10 |
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