JP5619475B2 - SUBSTRATE FOR SOLID ELECTROLYTIC CAPACITOR AND METHOD FOR MANUFACTURING THE SAME, SINGLE PANEL SOLID ELECTROLYTIC CAPACITOR ELEMENT AND METHOD FOR MANUFACTURING SAME - Google Patents

Description

  The present invention relates to a substrate for a solid electrolytic capacitor and a method for producing the same, a single plate solid electrolytic capacitor element and a method for producing the same, and a multilayer solid electrolytic capacitor and a method for producing the same.

  A multilayer solid electrolytic capacitor is configured by laminating a plurality of single-plate solid electrolytic capacitor elements. In a single-plate solid electrolytic capacitor element, an anode region and a cathode region are electrically insulated by an insulating resin material. And a solid electrolyte layer and a cathode connection portion formed in this order on the surface of the cathode region.

  That is, in a multilayer solid electrolytic capacitor, a plurality of single-plate solid electrolytic capacitor elements are stacked, cathode connection portions adjacent in the stacking direction are joined together, and a cathode terminal is connected to one of the cathode connection portions. On the other hand, the anode terminal is connected to the anode portion region arranged in the stacking direction (see, for example, Patent Document 1).

An example of a conventional solid electrolytic capacitor substrate used for such a multilayer solid electrolytic capacitor will be described with reference to FIG.
Fig.5 (a) is sectional drawing which shows typically an example of the base material for conventional solid electrolytic capacitors, (b) is the top view.

  The solid electrolytic capacitor substrate 80 is provided between the substrate 81, the etching layer 82 formed by etching on the surface of the substrate 81, and the anode region 80A and the cathode region 80C in the substrate 81, An insulating resin material 83 that electrically insulates the anode region 80A and the cathode region 80C is provided. Since the etching layer 82 is made porous, the insulating resin material 83 provided on the surface of the etching layer 82 is diffused into the etching layer 82 as shown by arrows in the drawing.

  The anode portion region 80A is a region to which an anode terminal (not shown) or another anode portion region (not shown) is connected. The cathode portion region 80C is a region where a solid electrolyte layer (not shown) and a cathode connecting portion (not shown) are formed in order on the surface. The anode part region 80A and the cathode part region 80C are separated by an insulating resin material 83, and the cathode part region 80C and the insulating resin material 83 are adjacent to each other. On the other hand, the anode region 80A and the insulating resin material 83 are not adjacent to each other, and a space 80S is provided between the anode region 80A and the insulating resin material 83. The width of the space 80S is 1000 to 1500 μm, for example.

  In addition, as a conventional solid electrolytic capacitor substrate, for example, an etching layer is formed on the surface, and at least part of the etching layer between the anode part region and the cathode part region is removed, and a recess formed by the removal. There is a base for a solid electrolytic capacitor filled with an insulating resin material (see, for example, Patent Document 2).

The base material for a solid electrolytic capacitor will be described with reference to FIG.
FIG. 6A is a cross-sectional view schematically showing an example of a conventional solid electrolytic capacitor substrate, and FIG. 6B is a plan view thereof.
The solid electrolytic capacitor base material 90 includes a base material 91, an etching layer 92, and an insulating resin material 93. The anode portion region 90A and the cathode portion region 90C are separated by an insulating resin material 93, and the cathode portion region 90C and the insulating resin material 93 are adjacent to each other.

  In the above points, the solid electrolytic capacitor base material 90 is the same as the solid electrolytic capacitor base material 80, except that the recesses 94 formed in the etching layer 92 are filled with the insulating resin material 93. The solid electrolytic capacitor 90 is different from the solid electrolytic capacitor substrate 80.

  By filling the concave portion 94 with the insulating resin material 93, when forming a solid electrolyte layer (not shown) on the surface of the cathode portion region 90C, the so-called scooping that the polymerization solution enters the anode portion region 90A side is prevented. Can be prevented.

  Also in the solid electrolytic capacitor substrate 90 described above, similarly to the solid electrolytic capacitor substrate 80, the anode region 90A and the insulating resin material 93 are not adjacent to each other, and the anode region 90A and the insulating resin are not adjacent to each other. A space 90 </ b> S is provided between the material 93.

  As shown in FIG. 5 and FIG. 6, by providing a space between the anode portion region and the insulating resin material, the insulating resin material diffuses to the anode portion region, resulting in poor connection in the anode portion. Can be prevented.

JP 2007-180327 A International Publication No. 2006/137482 Pamphlet

However, if a space is provided between the anode part region and the insulating resin material, the cathode part region is reduced by that amount, and there is a problem that the capacitance of the capacitor cannot be secured.
In addition, since the solid electrolyte layer cannot be formed in the portion provided with the insulating resin material, the portion provided with the insulating resin material does not develop a capacitance. Therefore, it is preferable that the coating amount of the insulating resin material is as small as possible.
Conventionally, a capacitor has been required to be reduced in size and increased in capacity. In view of such a point, there is still room for improvement in a conventional solid electrolytic capacitor substrate.

  The present invention relates to a solid electrolytic capacitor base material capable of reducing the size and increasing the capacity while preventing the solid electrolyte from creeping up and causing poor connection, a method for manufacturing the same, a single plate solid electrolytic capacitor element, and An object of the present invention is to provide a manufacturing method thereof, a multilayer solid electrolytic capacitor, and a manufacturing method thereof.

The present invention employs the following configuration in order to solve the above-described problems.
(1) A substrate having an etching layer on the surface and having an etching layer removal region formed by removing the etching layer between the anode region and the cathode region;
Provided closer to the cathode part region side than the edge of the etching layer removal region on the anode part region side so as not to contact the edge of the etching layer removal region on the anode part region side, and the anode part region and the cathode An insulating resin material that electrically insulates the partial area,
The etching layer removal region is a recess,
The edge of the etching layer removal region consists of a contact side between the recess and the etching layer, and a side wall of the recess,
The bottom surface of the recess is formed along the surface of the substrate ;
The base material for a solid electrolytic capacitor, wherein the insulating resin material is provided so as to be in contact with only the cathode region of the etching layer and the bottom surface of the recess .

According to the structure of (1), the etching layer removal area | region is formed by removing the etching layer between an anode part area | region and a cathode part area | region, and an insulating resin material is the etching layer removal area | region. The etching layer removal region is provided closer to the cathode portion region side than the edge of the etching layer removal region so that the anode portion region and the cathode portion region are electrically connected. Is insulated.
Therefore, since the diffusion of the insulating resin material toward the anode region can be blocked by the etching layer removal region, it is not necessary to secure a wide space between the anode region and the insulating resin material. The amount of resin material applied can be reduced. Accordingly, the size and capacity of the capacitor can be reduced.
Moreover, since the diffusion of the insulating resin material toward the anode region can be blocked by the etching layer removal region, it is possible to prevent the occurrence of poor connection.
Further, the combination of the etching layer removal region and the insulating resin material can surely prevent the polymerization solution from rising when forming the solid electrolyte.
Therefore, according to the solid electrolytic capacitor base material of (1), it is possible to reduce the size and increase the capacity while preventing the rising of the polymerization solution and the occurrence of poor connection of the anode part when forming the solid electrolyte. be able to.

The present invention can further employ the following configurations.
(2) The substrate for a solid electrolytic capacitor according to (1),
The insulating resin material is provided closer to the cathode part region than the etching layer removal region.

  According to the configuration of (2), since the diffusion of the insulating resin material toward the anode region can be more reliably blocked, the occurrence of poor connection can be more reliably prevented.

The present invention can further employ the following configurations.
(3) The solid electrolytic capacitor base material of (1),
The insulating resin material is provided so as not to contact the etching layer removal region.

  According to the configuration of (3), since the diffusion of the insulating resin material toward the anode region can be more reliably blocked, the occurrence of poor connection can be more reliably prevented.

The present invention can further employ the following configurations.
(4) The solid electrolytic capacitor base material according to any one of (1) to (3),
The insulating resin material is provided in contact with a contact side between the etching layer removal region and the etching layer.

  According to the configuration of (4), since the distance between the insulating resin material and the etching layer removal region is shortened as much as possible, it is possible to reduce the size and capacity of the capacitor.

The present invention can further employ the following configurations.
(5) The solid electrolytic capacitor base material according to any one of (1) to (4),
The thickness of the etching layer in the etching layer removal region is 0 to 0.5 when the thickness of the etching layer other than the etching layer removal region is 1.

  According to the configuration of (5), since the diffusion of the insulating resin material toward the anode region can be more reliably blocked, the occurrence of connection failure can be more reliably prevented. Furthermore, the creeping of the solid electrolyte can be prevented more reliably.

The present invention can further employ the following configurations.
(6) The solid electrolytic capacitor base material according to any one of (1) to (5),
The etching layer removal region is formed by irradiating the etching layer with laser light.

  According to the configuration of (6), since the narrow etching layer removal region is precisely formed, the capacitor can be reduced in size and increased in capacity while more reliably preventing the solid electrolyte from creeping up and the occurrence of poor connection. be able to.

The present invention employs the following configuration in order to solve the above-described problems.
(7) The substrate for a solid electrolytic capacitor according to any one of (1) to (6) ;
A dielectric oxide film and a solid electrolyte layer provided in the cathode region of the substrate for the solid electrolytic capacitor;
A single plate solid electrolytic capacitor element comprising: a cathode connection portion formed on an upper layer of the solid electrolyte layer.

According to the configuration of (7) , it is possible to reduce the size and increase the capacity of the capacitor while preventing the solid electrolyte from creeping up and causing poor connection.
The single plate solid electrolytic capacitor element may be used alone and may be a single plate solid electrolytic capacitor, or a plurality of single plate solid electrolytic capacitor elements may be stacked to form a stacked solid electrolytic capacitor.

The present invention employs the following configuration in order to solve the above-described problems.
(8) A multilayer solid electrolytic capacitor configured by laminating a plurality of single-plate solid electrolytic capacitor elements of (7) .

According to the configuration of (8) , when forming the solid electrolyte, it is possible to reduce the size and increase the capacity of the capacitor while preventing the polymerization solution from rising and the occurrence of poor connection of the anode portion.

The present invention employs the following configuration in order to solve the above-described problems.
(9) a step (A) of forming an etching layer removal region by removing the etching layer between the anode region and the cathode region in the base material having an etching layer formed on the surface by etching;
By providing an insulating resin material on the cathode part region side rather than the edge on the anode part region side of the etching layer removal region so as not to contact the edge on the anode part region side of the etching layer removal region, And (B) electrically insulating the anode part region and the cathode part region,
The etching layer removal region is a recess,
The edge of the etching layer removal region consists of a contact side between the recess and the etching layer, and a side wall of the recess,
The bottom surface of the recess is formed along the surface of the substrate ;
The said insulating resin material is a manufacturing method of the base material for solid electrolytic capacitors provided so that only the cathode part area | region of the said etching layer and the bottom face of the said recessed part may be contact | connected .

According to the structure of (9) , the etching layer removal area | region is formed by removing the etching layer between an anode part area | region and a cathode part area | region, and an insulating resin material is made into the anode part of the etching layer removal area | region. In order not to contact the edge on the region side, the etching layer removal region is provided closer to the cathode portion region than the edge on the anode portion region side, thereby electrically insulating the anode portion region and the cathode portion region.
Therefore, since the diffusion of the insulating resin material toward the anode region can be blocked by the etching layer removal region, it is not necessary to secure a wide space between the anode region and the insulating resin material. The amount of resin material applied can be reduced. Accordingly, the size and capacity of the capacitor can be reduced.
Moreover, since the diffusion of the insulating resin material toward the anode region can be blocked by the etching layer removal region, it is possible to prevent the occurrence of poor connection.
Further, the combination of the etching layer removal region and the insulating resin material can surely prevent the polymerization solution from creeping up when the solid electrolyte is formed.
Therefore, according to the method (9) , when forming the solid electrolyte, it is possible to reduce the size and increase the capacity of the capacitor while preventing the polymerization solution from creeping up and the occurrence of poor connection.

The present invention can further employ the following configurations.
(10) A method for producing a base material for a solid electrolytic capacitor according to (9) ,
In the step (B), the insulating resin material is provided closer to the cathode portion region than the etching layer removal region.

According to the configuration of (10) , since the diffusion of the insulating resin material toward the anode region can be more reliably blocked, the occurrence of poor connection can be more reliably prevented.

The present invention can further employ the following configurations.
(11) A method for producing a substrate for a solid electrolytic capacitor according to (9) ,
In the step (B), the insulating resin material is provided so that the insulating resin material does not contact the etching layer removal region.

According to the configuration of (11) , since the diffusion of the insulating resin material toward the anode region can be more reliably blocked, the occurrence of poor connection can be more reliably prevented.

The present invention can further employ the following configurations.
(12) A method for producing a substrate for a solid electrolytic capacitor according to any one of (9) to (11) ,
In the step (B), the insulating resin material is provided so as to be in contact with a contact side between the etching layer removal region and the etching layer.

According to the configuration of (12) , since the distance between the insulating resin material and the etching layer removal region can be shortened as much as possible, it is possible to reduce the size and capacity of the capacitor.

The present invention can further employ the following configurations.
(13) (9) It is a manufacturing method of the base material for solid electrolytic capacitors in any one of (12) ,
In the step (A), the thickness of the etching layer in the etching layer removal region is set to 0 to 0.5 so that the thickness of the etching layer other than the etching layer removal region is 1 to 0 to 0.5. Perform removal.

According to the configuration of (13) , since the diffusion of the insulating resin material toward the anode region can be more reliably blocked, the occurrence of poor connection can be more reliably prevented. Furthermore, the creeping of the solid electrolyte can be prevented more reliably.

The present invention can further employ the following configurations.
(14) (9) It is a manufacturing method of the base material for solid electrolytic capacitors of any one of (13) ,
The removal of the etching layer in the step (A) is performed by laser light irradiation.

According to the configuration of (14) , since the narrow etching layer removal region can be formed precisely, the capacitor can be reduced in size and increased in capacity while more reliably preventing the solid electrolyte from creeping up and the occurrence of poor connection. Can be achieved.

The present invention employs the following configuration in order to solve the above-described problems.
(15) A step of sequentially providing a dielectric oxide film and a solid electrolyte layer in the cathode region of the base for a solid electrolytic capacitor formed by the manufacturing method of any one of (9) to (14) ;
And a step of forming a cathode lead layer on the solid electrolyte layer.

According to the configuration of (15) , when forming the solid electrolyte, it is possible to reduce the size and increase the capacity of the capacitor while preventing the polymerization solution from creeping and the occurrence of poor connection of the anode part.

The present invention employs the following configuration in order to solve the above-described problems.
(16) A method for producing a multilayer solid electrolytic capacitor, comprising a step of laminating a plurality of single-plate solid electrolytic capacitor elements produced by the production method according to (15) .

According to the configuration of (16) , when forming the solid electrolyte, it is possible to reduce the size and increase the capacity of the capacitor while preventing the polymerization solution from creeping up and the occurrence of poor connection of the anode part.

  According to the present invention, when forming the solid electrolyte, it is possible to reduce the size and increase the capacity of the capacitor while preventing the polymerization solution from rising and the occurrence of poor connection of the anode portion.

(A) is sectional drawing which shows typically the base material for solid electrolytic capacitors which concerns on one Embodiment of this invention, (b) is the top view. (A) is a partial expanded sectional view near the etching layer removal area | region of the base material for solid electrolytic capacitors shown in FIG. 1, (b)-(f) is the base material for solid electrolytic capacitors of this invention, respectively. It is a partial expanded sectional view near the etching layer removal area | region in other examples. (A) is sectional drawing which shows typically the single-plate solid electrolytic capacitor element which concerns on one Embodiment of this invention, (b) is the top view. (A), (b) is sectional drawing which each shows typically the lamination type solid electrolytic capacitor concerning one embodiment of the present invention. (A) is sectional drawing which shows typically an example of the base material for conventional solid electrolytic capacitors, (b) is the top view. (A) is sectional drawing which shows typically an example of the base material for conventional solid electrolytic capacitors, (b) is the top view.

  Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.

<Base material for solid electrolytic capacitors>
Fig.1 (a) is sectional drawing which shows typically the base material for solid electrolytic capacitors which concerns on one Embodiment of this invention, (b) is the top view.

  The solid electrolytic capacitor substrate 10 includes an aluminum substrate 11, an etching layer 12 formed by etching on the surface of the substrate 11, and an anode region 10A and a cathode region 10C in the substrate 11. And an insulating resin material 13 that electrically insulates the anode region 10A and the cathode region 10C from each other. A recess (etching layer removal region) 14 is formed between the anode portion region 10 </ b> A and the cathode portion region 10 </ b> C in the base material 11 by removing the etching layer 12. The insulating resin material 13 is provided so as to be adjacent to the recess 14 on the cathode part region 10 </ b> C side with respect to the recess 14. Here, the width | variety of the recessed part 14 is 100-500 micrometers, for example.

  Since the etching layer 12 is made porous by electrochemical treatment by etching, the insulating resin material 13 provided on the surface of the etching layer 12 is etched by capillary action as indicated by arrows in the figure. It diffuses into the layer 12 and part of it reaches the substrate 11. However, since the concave portion 14 is formed in the etching layer 12 on the anode portion region 10A side of the insulating resin material 13 so as to be adjacent to the insulating resin material 13, the insulating resin material 13 has the anode portion. There is no diffusion toward the region 10A. Therefore, it is possible to prevent the occurrence of poor connection with the anode terminal (not shown) or the other anode part region (not shown) in the anode part region 10A.

A method for producing such a solid electrolytic capacitor substrate 10 will be described.
First, the surface of the base material 11 is etched to be electrochemically roughened, and the etching layer 12 is formed on the surface of the base material 11. Here, for example, it is preferable to apply a voltage of 10 V in an aqueous solution of ammonium adipate and perform anodization for about 60 minutes to form an oxide film layer (not shown) on the surface.

Next, the etching layer 12 (including the oxide film layer when an oxide film layer is formed, the same applies hereinafter) is irradiated with laser light, and the etching layer 12 is removed to form the recess 14. (Step (A)). In the step (A), it is preferable to remove the etching layer 12 so that the thickness of the etching layer 12 in the recess 14 is 0 to 0.5, where the thickness of the etching layer 12 other than the recess 14 is 1. .
Subsequently, the insulating resin material 13 is applied on the side of the cathode region 10C from the recess 14 so as to be adjacent to the recess 14 and wound in the circumferential direction, and the anode region 10A and the cathode region 10C are separated. (Step (B)). The position where the insulating resin material 13 is applied is not in contact with the edge 15A (see FIG. 2) of the concave portion 14 on the anode portion region 10A side, and is closer to the cathode portion region 10C than the edge 15A of the anode portion region 10A of the concave portion 14. If it is, it will not be specifically limited. The preferred position of the insulating resin material 13 will be described in detail later with reference to FIG. Through the steps (A) and (B), the solid electrolytic capacitor substrate 10 is completed.

Next, the aspect of the recessed part (etching layer removal area | region) and insulating resin material in the base material for solid electrolytic capacitors which concerns on this invention is demonstrated more concretely.
2 (a) is a partially enlarged cross-sectional view of the solid electrolytic capacitor substrate shown in FIG. 1 in the vicinity of the recess, and (b) to (f) are respectively the solid electrolytic capacitor substrate of the present invention. It is a partial expanded sectional view of the recessed part vicinity in another example. 2 (b) to 2 (f), components similar to those in FIG. 2 (a) are denoted by the same reference numerals as those in FIG. 2 (a), and description thereof is omitted.

  In FIG. 2A, the recess 14 is formed so as to penetrate the etching layer 12 and reach the substrate 11. In other words, the thickness of the etching layer 12 in the recess 14 is 0, where the thickness of the etching layer 12 other than the recess 14 is 1. In the figure, 16A indicates the contact side of the concave portion 14 and the etching layer 12 on the anode portion region 10A side, and 17A indicates the side wall of the concave portion 14 on the anode portion region side 10A side. The edge 15A on the partial region 10A side is composed of a contact side 16A and a side wall 17A. Similarly, 16C indicates the contact side of the concave portion 14 and the etching layer 12 on the cathode portion region 10C side, and 17C indicates the side wall of the concave portion 14 on the cathode portion region side 10C side. The edge 15C on the side of the partial region 10C includes a contact side 16C and a side wall 17C.

  The insulating resin material 13 is provided closer to the cathode portion region 10C than the edge 15A of the anode portion region 10A of the recess 14 so as not to contact the edge 15A of the recess 14 on the anode portion region 10A side. The cathode part region 10C is electrically insulated. The insulating resin material 13 is provided closer to the cathode portion region 10 </ b> C than the recess 14. The insulating resin material 13 is not in contact with the recess 14, but is in contact with the contact side 16 </ b> C on the cathode portion region 10 </ b> C side between the recess 14 and the etching layer 12. The width of the insulating resin material 13 is preferably, for example, 300 to 1000 μm. Here, the width of the insulating resin material 13 refers to the width along the direction from the anode region 10 </ b> A toward the cathode region 10 </ b> C on the contact surface with the etching layer 12.

Next, the mode shown in FIG. 2B will be described.
The mode shown in FIG. 2B is different from the mode shown in FIG. 2A in that a gap W is provided between the insulating resin material 23 and the contact side 16C. Thus, in the case where the interval W between the insulating resin material 23 and the contact side 16C is provided, the interval W is preferably 300 μm or less, and more preferably 100 μm or less. Within the range of 300 μm or less, the occurrence of poor connection of the anode part and the formation of the solid electrolyte can be more reliably prevented without disturbing the reduction in size and increase in capacity.

Next, the aspect shown in FIG.
2C is that the insulating resin material 33 hangs down along the edge 15C of the recess 14 and reaches the bottom surface of the recess 14 (the surface of the substrate 11). ) Is different from the embodiment shown in FIG. Thus, in the present invention, the insulating resin material 33 may be partially included in the recess 14 as long as it is not in contact with the edge 15 </ b> A of the recess 14.

  When the insulating resin material 33 enters the recess 14, the recess 14 is preferably formed so as to reach the base material 11. This is because all of the porous etching layer 12 has been removed, so that the insulating resin material 13 can be prevented from diffusing and reaching the anode region 10A through the porous etching layer 12. .

Next, the mode shown in FIG.
The mode illustrated in FIG. 2D is different from the mode illustrated in FIG. 2A in that the concave portion 44 is formed so as not to reach the base material 11. In the drawing, an edge 45A on the anode portion region 10A side of the recess 44 is composed of a contact side 46A and a side wall 47A, and an edge 45C on the cathode portion region 10C side of the recess 44 is composed of a contact side 46C and a side wall 47C.

  As shown in FIG. 2D, when the insulating resin material 13 is provided closer to the cathode portion region side 10C than the concave portion 44 and the insulating resin material 13 and the concave portion 44 are not in contact, the concave portion 44 is Even if it is not formed so as to reach the base material 11, it is possible to prevent the polymerization solution from creeping up when the anode portion is poorly connected and the solid electrolyte is formed.

  In this way, when the insulating resin material 13 and the recess 44 are not in contact with each other and the recess 44 is formed so as not to reach the substrate 11, the thickness of the etching layer 12 in the recess 44 is as follows: When the thickness of the etching layer 12 other than the recess 44 is 1, it is preferably greater than 0 and 0.5 or less. This is because the occurrence of poor connection of the anode portion and the formation of the solid electrolyte can more reliably prevent the polymerization solution from creeping up. In addition, by making the recess 44 shallow, it is possible to ensure the strength of the solid electrolytic capacitor base material.

Next, the aspect shown in FIG.
The mode shown in FIG. 2 (e) is that the recess 54 does not reach the substrate 11, the width of the recess 54 is wide, and the insulating resin material 53 is in the recess 54. It is different from the embodiment shown in (a). In the drawing, the edge 55A on the anode part region 10A side of the recess 54 is composed of a contact side 56A and a side wall 57A, and the edge 55C on the cathode part region 10C side of the recess 54 is composed of a contact side 56C and a side wall 57C.

  Thus, when the recessed part 54 does not reach the base material 11 and the insulating resin material 53 is in the recessed part 54, the width of the recessed part 54 is preferably 300 to 700 μm, The thickness of the etching layer 12 in the recess 54 is preferably more than 0 and 0.5 or less when the thickness of the etching layer 12 other than the recess 54 is 1. This is because the occurrence of poor connection of the anode portion and the formation of the solid electrolyte can more reliably prevent the polymerization solution from creeping up. Further, by making the recess 54 shallow, it is possible to ensure the strength of the solid electrolytic capacitor base material.

Next, the aspect shown in FIG.
The mode shown in FIG. 2 (f) is that the width of the concave portion 64 is wide, the insulating resin material 63 is all provided in a region corresponding to the concave portion 64, and is not in contact with the edges 65A and 65C of the concave portion 64. 2 (a) is different. In the drawing, the edge 65A on the anode portion region 10A side of the recess 64 is made up of a contact side 66A and a side wall 67A, and the edge 65C on the cathode portion region 10C side of the recess 64 is made up of a contact side 66C and a side wall 67C. .

  Thus, in the case where the recess 64 reaches the base 11 and the insulating resin material 63 is provided in the recess 64 so as not to contact the edges 65A and 65C of the recess 64, the width of the recess 64 is 500. It is preferable that it is -900 micrometers. This is because the occurrence of poor connection of the anode portion and the formation of the solid electrolyte can more reliably prevent the polymerization solution from creeping up.

Of course, in the present invention, the mode of the recess and the insulating resin material is not limited to the mode shown in FIGS. 2A to 2F, and the insulating resin material is in contact with the edge of the recess on the anode region side. In order to avoid this, it suffices if it is provided closer to the cathode part region than the edge of the concave part on the anode part region side.
Furthermore, in this invention, the base material for solid electrolytic capacitors is not limited to the example mentioned above, For example, the following structures are employable.

The solid electrolytic capacitor base material in a preferred embodiment of the present invention is a capacitor material having an etching layer on the surface, preferably a valve metal material having micropores, particularly preferably a dielectric oxide film on the surface. It has a valve metal.
The valve metal is selected from aluminum, tantalum, niobium, titanium, zirconium, or an alloy-based metal foil, rod, or powder containing these as a main component. These metals have a dielectric oxide film as a result of the surface being oxidized by oxygen in the air, but are made porous by etching or molding / sintering by a known method in advance. Next, it is preferable to form a dielectric oxide film reliably by chemical conversion according to a known method or the like.

As the metal base material having a valve action, it is preferable to use a metal base material that has been cut into a size that matches the shape of the solid electrolytic capacitor after roughening.
As the metal foil having a valve action, the thickness varies depending on the purpose of use, but generally a foil having a thickness of about 40 to 150 μm is used. Moreover, although the size and shape of the metal foil having a valve action vary depending on the application, a rectangular element having a width of about 1 to 50 mm and a length of about 1 to 50 mm is preferable as a flat element unit, and more preferably a width of about 2 to It is 20 mm, length is about 2-20 mm, more preferably width is about 2-5 mm, and length is about 2-6 mm.

  In the solid electrolytic capacitor base material having an etching layer on the surface as described above, the present invention removes the etching layer between the anode part region and the cathode part region, and provides the insulating resin material on the anode part region side of the etching layer removal region. It is characterized in that it is provided on the cathode part region side rather than the edge on the anode part region side of the etching layer removal region so as not to contact the edge of the etching layer.

That is, in a solid electrolytic capacitor base material having an etching layer, for example, a solid electrolytic capacitor base material in which a dielectric film is formed on the surface of a valve action metal material having micropores, an anode region and a cathode region The etching layer is removed from at least a part of the region in between.
The removal of the etching layer includes not only removing the etching layer itself from the substrate, but also removing the insulating resin material, or the pores that can lift up the insulating resin material and the solid electrolyte. For example, removal of an etching layer, compression of an etching layer, etc. are mentioned. Furthermore, it includes densification of pores due to partial melting of the etching layer.

  The method for removing the etching layer is not particularly limited as long as the porous body can be removed with high accuracy and does not adversely affect other regions, particularly the cathode region. For example, mechanical, electrical, chemical (for example, , Dissolution), thermal (for example, volatilization) methods, and the like. Preferably, a cutting method using laser light, a cutting method using laser light confined in a water flow column, and the like can be given. It is also possible to use a method of cutting with a needle-shaped metal piece, a method of cutting while rotating and polishing with a disk-shaped metal plate, or the like.

In the cutting method using laser light, laser light having a wavelength of 0.1 to 11 μm can be used. Specifically, solid lasers such as ruby, glass and YAG, semiconductor lasers such as GaAs and InGaAsP, and dye lasers are used. Examples include liquid lasers, gas lasers such as He—Ne, Ar, ArF, F ₂ , and CO ₂ . Particularly preferable are a cutting method using YAG and CO ₂ laser light and a cutting method using YAG laser light sealed in a water flow column.

For example, the water pressure is 10 to 50 MPa, the column diameter is 30 to 180 μm, and water can be blown out like a thin thread, and the YAG laser can be guided into the water and cut. The YAG laser light confined in the water flow column can remove the heat generated in the laser light irradiation portion by the water flow simultaneously with the irradiation. As a result, it is possible to reduce the dissolution of the surface of the etching layer remaining on the substrate, so that the permeability of the insulating resin material is improved, and further, the occurrence of contamination and burrs due to dissolved powder is prevented. It is effective as a cutting method.
The cutting width when using the YAG laser light confined in the water flow column is expanded to a range of 1 to 3 times the column diameter due to the synergistic effect of the water pressure and the laser.

  The compression method is not particularly limited as long as it can compress the etching layer with high accuracy and does not adversely affect other regions, particularly the cathode region. For example, a mechanical method can be used. More specifically, there are a method of pressing an edge of a needle-like metal piece or a thin piece, a method of pressing a disc-like metal plate while rotating it, and the like, but not limited thereto.

The ratio of the recesses formed by removing the etching layer is preferably such that when the total thickness of the etching layer (the thickness of the etching layer in the portion not removed) is 1, the etching layer in the removed portion The thickness is preferably in the range of 0 to 0.5.
As a more preferable range, when the total thickness of the etching layer is 1, the thickness of the removed etching layer is 0 to 0.3, and more preferably 0 to 0.1.

  In the case of removal, it is possible to remove the entire etching layer at the removal site, but it is also possible to leave the etching layer partially in order to ensure the strength of the solid electrolytic capacitor substrate.

The width of the etching layer to be removed is represented by a ratio of 0.0005 to 0.1, where the length of the cathode region in the major axis direction is 1.
As a more preferable range, it is the range of 0.001-0.075, More preferably, it is the range of 0.002-0.05. If it is the range of 0.001-0.075, while being able to perform electrical insulation with a cathode part area | region and an anode part area | region more reliably, the capacity | capacitance of a capacitor | condenser can be ensured.

  For the purpose of the present invention, when the substrate for a solid electrolytic capacitor is flat, etching is performed on both sides of the substrate between the anode region and the cathode region or circumferentially around the cross section of the substrate. It is preferable to perform a layer removal or compression treatment.

  The chemical conversion treatment of the metal having a valve action cut into a predetermined shape can be performed by various methods. The conditions for the chemical conversion treatment are not particularly limited. For example, an electrolytic solution containing at least one of oxalic acid, adipic acid, boric acid, phosphoric acid and the like is used, and the voltage is already formed on the chemical conversion foil to be processed. Chemical conversion is performed under the condition that the numerical value corresponding to the chemical conversion voltage of the film and the chemical conversion time are within 60 minutes.

  The conditions of the chemical conversion treatment are suitable as an industrial method, but unless the dielectric oxide film already formed on the surface of the valve metal material is destroyed or deteriorated, the type of electrolyte, concentration of electrolyte, temperature Various conditions such as current density and formation time can be arbitrarily selected.

The insulating resin material is used as a shielding material to electrically insulate the cathode region and the anode region and prevent the solid electrolyte or the processing solution for forming the solid electrolyte from entering the anode region from the cathode region. Provided.
Such an insulating resin material is not particularly limited as long as it meets the above-described purpose, and is a general heat-resistant resin, preferably a heat-resistant resin that can be dissolved or swelled in a solvent or a precursor thereof, an inorganic fine powder. And a composition comprising cellulose resin (Japanese Patent Laid-Open No. 11-80596) can be used. Specific examples include polyphenylsulfone (PPS), polyethersulfone (PES), cyanate ester resin, fluororesin (tetrafluoroethylene, tetrafluoroethylene / perfluoroalkyl vinyl ether copolymer), polyimide, and derivatives thereof. Can be mentioned. Polyimide, polyethersulfone, fluororesin and their precursors are preferable, and in particular, polyimide having sufficient adhesion and filling properties to the valve action metal and excellent in insulating property capable of withstanding high temperature processing up to about 450 ° C. is preferable. . As polyimide, it can be sufficiently cured by heat treatment at a low temperature of 200 ° C. or less, preferably 100 to 200 ° C., and there is little external impact such as damage or destruction due to heat of the dielectric layer on the surface of the anode foil. Polyimide can be suitably used. The preferred average molecular weight of the polyimide is about 1,000 to 1,000,000, more preferably about 2,000 to 200,000.

  These can be dissolved or dispersed in an organic solvent, and a solution or dispersion having an arbitrary solid content concentration (and therefore viscosity) suitable for coating operation can be easily prepared. A preferable concentration is about 10 to 60% by mass, and a more preferable concentration is about 15 to 40% by mass. If the concentration is too low, the drawn line by the insulating resin material blurs, and if it is too high, stringing or the like occurs and the line width becomes unstable.

  In the present invention, the liquid insulating resin material described above is applied, for example, as shown in FIGS. If necessary, the insulating resin material after application may be subjected to treatment such as drying, heating, and light irradiation.

<Single plate solid electrolytic capacitor element>
Next, the single plate solid electrolytic capacitor element of the present invention will be described.
FIG. 3A is a cross-sectional view schematically showing a single plate solid electrolytic capacitor element according to an embodiment of the present invention, and FIG. 3B is a plan view thereof.

  In the single plate solid electrolytic capacitor element 1, a solid electrolyte layer 2, a carbon layer 3, and a silver layer 4 are sequentially laminated on the surface of the cathode portion region 10 </ b> C of the solid electrolytic capacitor substrate 11. The solid electrolyte layer 2 is a layer formed by chemical polymerization or electrolytic polymerization of an electrolyte containing a conductive polymer such as polyethylene dioxythiophene (PEDT). The carbon layer 3 and the silver layer 4 function as a cathode connection part, and are connected to a cathode terminal (not shown) or another cathode connection part. On the other hand, the anode portion region 10A is directly connected to an anode terminal (not shown) or another anode portion region. In addition, about the solid electrolyte layer 2, it is not limited to the example mentioned above, A well-known solid electrolyte can be used. Further, the cathode connection portion is not limited to the laminated structure of the carbon layer and the silver layer.

  As a manufacturing method of the single plate solid electrolytic capacitor element 1, for example, the solid electrolyte layer 2, the carbon layer 3, and the silver layer 4 are laminated in this order on the cathode region 10C of the above-described solid electrolytic capacitor substrate 10. The method etc. which obtain the single-plate solid electrolytic capacitor element 1 by can be mentioned.

<Multilayer solid electrolytic capacitor>
Next, the multilayer solid electrolytic capacitor will be described.
FIGS. 4A and 4B are cross-sectional views schematically showing a multilayer solid electrolytic capacitor according to an embodiment of the present invention. In the drawing, the mold resin is not shown.

  In the multilayer solid electrolytic capacitor 100 shown in FIG. 4A, a plurality (four) of the single-plate solid electrolytic capacitor elements 1 described above are laminated. When each single-plate solid electrolytic capacitor element 1 is laminated, each anode side is laminated in one direction, and each cathode side is laminated in the other direction. It is a solid electrolytic capacitor.

  An anode region 10 </ b> A of each single plate solid electrolytic capacitor element 1 is connected to an anode lead frame (anode terminal) 101. The silver layers 4 (cathode connection portions) of the single-plate solid electrolytic capacitor elements 1 adjacent to each other in the stacking direction are joined to each other via a conductive adhesive 103. The silver layer 4 of the lowermost single-plate solid electrolytic capacitor element 1 is connected to a cathode lead frame (cathode terminal) 102 via a conductive adhesive 103.

  Also in the multilayer solid electrolytic capacitor 200 shown in FIG. 4B, a plurality (four) of the single-plate solid electrolytic capacitors 1 described above are laminated. When the single plate solid electrolytic capacitor elements 1 are stacked, the cathode side is arranged at the center, and the anode side is arranged so as to be alternately positioned in a direction facing each other.

  The two sets of anode region 10A overlapping in the stacking direction are each connected to the anode lead frame 201, and the silver layers 4 of the single-plate solid electrolytic capacitor elements 1 adjacent in the stacking direction at the center are joined together. The silver layer 4 of the lowermost single-plate solid electrolytic capacitor element 1 is connected to the cathode lead frame 202 via the conductive adhesive 203.

  A method for manufacturing a multilayer solid electrolytic capacitor will be described by taking the multilayer solid electrolytic capacitor 100 shown in FIG. 4A as an example. First, the silver layers 4 (cathode connection portions) of a plurality of single-plate solid electrolytic capacitor elements 1 are laminated by bonding via a conductive adhesive 103. In addition, the silver layer 4 of the lowermost single-plate solid electrolytic capacitor element 1 is bonded to the cathode lead frame 102 via the conductive adhesive 103. Furthermore, the anode region 10 </ b> A of the plurality of single plate solid electrolytic capacitor elements 1 is connected to the anode lead frame 101. Subsequently, the entire laminated body is molded with a resin except for the connection surfaces of the anode and cathode lead frames to the external circuit, to obtain a finished product. The resin used here is different from the insulating resin material in the present invention.

  4 (a) and 4 (b), a case where a plurality of single-plate solid electrolytic capacitor elements 1 are stacked to form stacked solid electrolytic capacitors 100 and 200 has been described. However, the present invention is not limited to this example. For example, an anode terminal and a cathode terminal may be connected to one single plate solid electrolytic capacitor element to form a single plate solid electrolytic capacitor. Moreover, a lamination | stacking aspect is not limited to the aspect shown in FIG.

  In the present invention, a solid electrolytic capacitor element having an anode region at one end was prepared. However, an element having an anode region at both ends of the solid electrolytic capacitor element and a cathode region between the anode regions was used. May be.

DESCRIPTION OF SYMBOLS 1 Single plate solid electrolytic capacitor element 2 Solid electrolyte layer 3 Carbon layer 4 Silver layer 10 Solid electrolytic capacitor base material 10A Anode portion region 10C Cathode portion region 11 Base material 12 Etching layers 13, 23, 33, 53, 63 Insulating resin Material 14, 44, 54, 64 Etching layer removal region (concave)
15A, 45A, 55A, 65A Edges 15C, 45C, 55C, 65C (on the cathode part region side of the etching layer removal region) Edges 16A, 46A, 56A, 66A (on the etching layer removal region side) Contact sides 16C, 46C, 56C, 66C (on the cathode region side of the etching layer removal region and the etching layer) contact sides 17A, 47A, 57A, 67A (on the anode region side of the removal region and the etching layer) Side walls 17C, 47C, 57C, 67C (on the anode part region side) Side walls 100, 200 (on the cathode part region side of the recess) Multilayer solid electrolytic capacitor 101, 201 Anode lead frame (anode terminal)
102, 202 Cathode lead frame (cathode terminal)
103, 203 conductive adhesive

Claims (16)

A substrate having an etching layer on the surface, and an etching layer removal region formed by removing the etching layer between the anode region and the cathode region; and
Provided closer to the cathode part region side than the edge of the etching layer removal region on the anode part region side so as not to contact the edge of the etching layer removal region on the anode part region side, and the anode part region and the cathode An insulating resin material that electrically insulates the partial area,
The etching layer removal region is a recess,
The edge of the etching layer removal region consists of a contact side between the recess and the etching layer, and a side wall of the recess,
The bottom surface of the recess is formed along the surface of the substrate ;
The base material for a solid electrolytic capacitor, wherein the insulating resin material is provided so as to be in contact with only the cathode region of the etching layer and the bottom surface of the recess .   The base material for a solid electrolytic capacitor according to claim 1, wherein the insulating resin material is provided closer to the cathode portion region than the etching layer removal region.   The base material for a solid electrolytic capacitor according to claim 1, wherein the insulating resin material is provided so as not to contact the etching layer removal region.   The base for a solid electrolytic capacitor according to any one of claims 1 to 3, wherein the insulating resin material is provided in contact with a contact side between the etching layer removal region and the etching layer. Wood.   5. The thickness of the etching layer in the etching layer removal region is 0 to 0.5, where 1 is the thickness of the etching layer other than the etching layer removal region. The base material for solid electrolytic capacitors as described in 2.   The base material for a solid electrolytic capacitor according to claim 1, wherein the etching layer removal region is formed by irradiating the etching layer with laser light. The substrate for a solid electrolytic capacitor according to any one of claims 1 to 6,
A dielectric oxide film and a solid electrolyte layer provided in the cathode region of the substrate for the solid electrolytic capacitor;
A single plate solid electrolytic capacitor element, comprising: a cathode lead layer formed on an upper layer of the solid electrolyte layer.   A multilayer solid electrolytic capacitor comprising a plurality of the single-plate solid electrolytic capacitor elements according to claim 7 laminated. A step (A) of forming an etching layer removal region by removing the etching layer between the anode region and the cathode region in the substrate having an etching layer formed on the surface by etching;
By providing an insulating resin material on the cathode part region side rather than the edge on the anode part region side of the etching layer removal region so as not to contact the edge on the anode part region side of the etching layer removal region, And (B) electrically insulating the anode part region and the cathode part region,
The etching layer removal region is a recess,
The edge of the etching layer removal region consists of a contact side between the recess and the etching layer, and a side wall of the recess,
The bottom surface of the recess is formed along the surface of the substrate ;
The method for manufacturing a substrate for a solid electrolytic capacitor, wherein the insulating resin material is provided so as to be in contact with only a cathode portion region of the etching layer and a bottom surface of the recess .   10. The method for manufacturing a substrate for a solid electrolytic capacitor according to claim 9, wherein, in the step (B), the insulating resin material is provided closer to the cathode part region than the etching layer removal region.   In the said (B) process, the said insulating resin material is provided so that the said insulating resin material may not contact the said etching layer removal area | region, The manufacture of the base material for solid electrolytic capacitors of Claim 9 characterized by the above-mentioned. Method.   12. The solid according to claim 9, wherein, in the step (B), the insulating resin material is provided so as to be in contact with a contact side between the etching layer removal region and the etching layer. A method for producing a substrate for an electrolytic capacitor.   In the step (A), the thickness of the etching layer in the etching layer removal region is set to 0 to 0.5 so that the thickness of the etching layer other than the etching layer removal region is 1 to 0 to 0.5. It removes, The manufacturing method of the base material for solid electrolytic capacitors of any one of Claims 9-12 characterized by the above-mentioned.   The method for producing a substrate for a solid electrolytic capacitor according to any one of claims 9 to 13, wherein the removal of the etching layer in the step (A) is performed by laser light irradiation. A step of sequentially providing a dielectric oxide film layer and a solid electrolyte layer on the cathode region of the base for a solid electrolytic capacitor formed by the manufacturing method according to any one of claims 9 to 14,
And a step of forming a cathode lead layer on the solid electrolyte layer. A method for producing a single plate solid electrolytic capacitor element. A method for producing a multilayer solid electrolytic capacitor, comprising a step of laminating a plurality of single-plate solid electrolytic capacitor elements produced by the production method according to claim 15.

Images