JP5626328B2 - Optical semiconductor device - Google Patents

Description

The present invention relates to an optical semiconductor device such as a light emitting device that can be used as a backlight light source of a display device, a lighting fixture, a display, a liquid crystal display, a CCD or a photodiode light receiving device that can be used in a video camera, a digital still camera, or the like. In particular, the present invention relates to a surface-mount type optical semiconductor device that is thin / small in size, excellent in light extraction efficiency and capture efficiency, and excellent in mounting accuracy on a circuit board.

2. Description of the Related Art In recent years, various electronic devices such as light-emitting devices (light-emitting diodes) and light-receiving devices (CCDs) mounted on them have been developed in association with downsizing and weight reduction of electronic devices. In these optical semiconductor devices, for example, an optical semiconductor element such as a light emitting element or a light receiving element is placed on a double-sided through-hole printed circuit board on which a pair of metal conductor patterns formed on both sides of an insulating substrate are formed. The metal conductor pattern and the optical semiconductor element are electrically connected using, for example.

However, it is essential for such an optical semiconductor device to use a double-sided through-hole printed circuit board, and since this double-sided through-hole printed circuit board has a thickness of at least about 0.1 mm, the surface-mount type optical semiconductor device This is a factor that hinders thorough thinning. Therefore, an optical semiconductor device having a structure that does not use such a printed circuit board has been developed (for example, Patent Document 1).

JP 2005-79329 A

The light emitting device disclosed in Patent Document 1 forms a thin metal film on a substrate by vapor deposition or the like, and uses this as an electrode, which is covered with a sealing resin such as a translucent resin together with a light emitting element, thereby providing a conventional surface. Thinning is possible compared to a mounting type light emitting device.

However, when mounting a light emitting device on a circuit board or the like using solder, the electrode made of such a thin metal film uses an electrode provided on the printed board as described above or an electrode made of a plate-like metal. Compared to the case, since the amount of solder creeping up is small, the bonding strength with the circuit board tends to decrease. Further, when the electrode does not reach the side surface of the light emitting element, it is difficult to confirm the bonding state with the solder.

Further, when used as a light-emitting device, since only a translucent resin is used, light escapes from the light-emitting element in the lower surface direction, and the light extraction efficiency tends to be reduced. Although a structure in which a mortar-shaped metal film is provided to reflect light is disclosed, in order to provide such a metal film, it is necessary to provide unevenness on the substrate. Then, since the light emitting device is miniaturized, the unevenness becomes extremely fine, and not only processing becomes difficult, but also problems such as being easily damaged when peeling off the substrate due to the uneven structure are likely to occur.

Furthermore, a thin metal film formed by a vapor deposition method as disclosed in Patent Document 1 is generally flat, and it is difficult to obtain sufficiently strong adhesion with a sealing resin.

In order to achieve the above object, an optical semiconductor device of the present invention is provided with an optical semiconductor element, a first conductive member electrically connected to the optical semiconductor element, and the optical semiconductor element separated from the first conductive member. An optical semiconductor device comprising: a second conductive member on which the first conductive member is mounted; and a sealing member that covers the optical semiconductor element and is in contact with the first conductive member and the second conductive member. The conductive member and the second conductive member each have a lower surface that forms the outer surface of the optical semiconductor device, and the first conductive member includes a first flat portion having an upper surface that is electrically connected to the optical semiconductor element. And a first protrusion having an upper surface protruding from the first flat portion, wherein at least a part of the side surface forms the outer surface of the optical semiconductor device. To do. This makes it easier for the solder to crawl up and increases the bonding strength with the circuit board or the like.

In the optical semiconductor device according to claim 2 of the present invention, the second conductive member includes a second flat part having an upper surface on which the optical semiconductor element is placed, and a second flat part protruding from the second flat part. The second protrusion is characterized in that at least a part of the side surface forms the outer surface of the optical semiconductor device. Thereby, it becomes easy to crawl up a solder.

An optical semiconductor device according to a third aspect of the present invention is characterized in that the upper surfaces of the first projecting portion and the second projecting portion are located on substantially the same plane. As a result, the amount of solder rising can be made substantially the same, and stable mounting can be achieved.

The optical semiconductor device according to claim 4 of the present invention is characterized in that a base made of a resin capable of blocking light from the optical semiconductor element is provided between the first conductive member and the second conductive member. . Thereby, the loss of light can be reduced.

The optical semiconductor device according to claim 5 of the present invention is characterized in that the base has side walls in which the first protrusion and the second protrusion are embedded. Thereby, the light extraction efficiency is improved.

The optical semiconductor device according to claim 6 of the present invention is characterized in that the side wall is provided around the optical semiconductor element. This improves the light extraction efficiency and makes it easier to control the light distribution characteristics.

The optical semiconductor device according to claim 7 of the present invention is characterized in that the first projecting portion and the second projecting portion respectively form outer surfaces of the optical semiconductor device on two side surfaces of the side walls. And Thereby, it can be used as a side emission type optical semiconductor device.

According to the present invention, when an optical semiconductor device such as a light-emitting device or a light-receiving device is mounted, the bonding strength to a circuit board or the like can be increased and an optical semiconductor device with excellent reliability can be obtained. In the case of a light-emitting device, light from the light-emitting element can be irradiated in a target direction, and light extraction efficiency can be improved.

The best mode for carrying out the present invention will be described below with reference to the drawings. However, the form shown below illustrates the optical semiconductor device and the manufacturing method thereof for embodying the technical idea of the present invention, and is not limited to the following.

Further, the present specification by no means specifies the member shown in the claims as the member of the embodiment. In particular, the dimensions, materials, shapes, relative arrangements, and the like of the components described in the embodiments are not intended to limit the scope of the present invention only to the extent that there is no specific description. It is just an example. It should be noted that the size and positional relationship of the members shown in each drawing may be exaggerated for clarity of explanation. Furthermore, in the following description, the same name and symbol indicate the same or the same members, and detailed description thereof will be omitted as appropriate.

Embodiment 1 An optical semiconductor device (light-emitting device) 100 of this embodiment is shown in FIGS. 1A and 1B. 1A is a cross-sectional view of the light-emitting device 100 shown in FIG. 1B taken along the line A-A ′, and FIG. 1B is a top view of the light-emitting device 100.

In the present embodiment, as shown in FIGS. 1A and 1B, the light emitting device 100 includes a light emitting element 103, first conductive members 101 and 101 ′ electrically connected to the light emitting element 103, and a first A second conductive member 102 on which the light emitting element 103 is placed, spaced apart from the conductive members 101 and 101 ′, and the first conductive member 101, 101 ′ and the second conductive member 102 covering the light emitting element 103 and And a sealing member 104 in contact therewith. The lower surfaces of the first conductive members 101 and 101 ′ and the second conductive member 102 form the outer surface of the light emitting device 100, and the first conductive members 101 and 101 ′ are electrically connected to the light emitting element 103. The first flat portions 101a and 101a ′ having upper surfaces connected to the first flat portions 101a and 101a ′, and the first protruding portions 101b and 101b ′ having upper surfaces protruding from the first flat portions 101a and 101a ′. The first protrusions 101 b and 101 b ′ are characterized in that at least a part of the side surfaces forms the outer surface of the light emitting device 100.

(First Conductive Member / Second Conductive Member) The first conductive member is electrically connected to the light emitting element and functions as an electrode for supplying electric power from the outside. The second conductive member is a member on which the light emitting element is placed, and functions as a support. The second conductive member has either a case where the light emitting element is merely placed and does not contribute to energization, or a case where the second conductive member contributes to energization to the light emitting element or the protection element, that is, a case where the second conductive member functions as an electrode. In the first embodiment, the case where the second conductive member is used as a support that does not contribute to conduction is described.

In this embodiment, both the first conductive member and the second conductive member are provided so that the outer surface is formed on the lower surface of the light emitting device, that is, not exposed to the sealing member or the like and exposed to the outside (lower surface). It has been. The shape and size of the first conductive member and the second conductive member in a top view can be arbitrarily selected according to the size of the light emitting device and the number and size of the light emitting elements to be mounted. .

(First Conductive Member) In the present embodiment, as shown in FIG. 1A, the first conductive members 101, 101 ′ are provided one by one on two opposing sides of the light emitting device 100 that is substantially square when viewed from above. The second conductive member 102 is interposed between the sealing member 104 and the second conductive member 102. Here, since the second conductive member 102 does not contribute to energization and is used as a support for the light emitting element 103, the two first conductive members 101 and 101 'function as a pair of positive and negative electrodes.

The first conductive members 101 and 101 ′ include first flat portions 101a and 101a ′ having upper surfaces that are electrically connected to the light emitting element 103 via the conductive wires 105 and 105 ′, and the first flat portions. 101a, 101a 'and the 1st protrusion part 101b, 101b' which has the upper surface which protrudes. The first protrusions 101b and 101b ′ have at least a part of their side surfaces forming the outer surface of the light emitting device 100, that is, exposed to the outside without being covered with the sealing member 104. Is provided. As described above, the first conductive members 101 and 101 ′ are exposed so as to be thick (high) on the side surface of the light-emitting device, so that when they are mounted on a circuit board or the like, a joining member such as solder may crawl up. Therefore, it can be mounted firmly.

In the light emitting device 100 shown in FIG. 1A, the two first conductive members 101 and 101 ′ have substantially the same size and shape in width and height in top view and side view of the first protrusions 101b and 101b ′. As a result, the amount of solder creeping up can be made comparable. Therefore, it becomes easy to equalize the bonding force between the two first conductive members 101 and 101 ′ and the circuit board, and it is difficult to cause mounting defects such as floating of one side. However, the present invention is not limited to this, and different sizes and shapes may be used. Appropriate shapes and sizes may be used according to the shape and size of the light emitting device.

The first protrusions 101b and 101b ′ are continuous from the bottom surface of the light emitting device 100 to the upper surface of the first protrusions 101b and 101b ′ without being provided so that all of the side surfaces are exposed on the side surface of the light emitting device 100. As long as it is exposed. This makes it easier for the solder to crawl up.

Further, the upper surfaces of the first protrusions 101b and 101b ′ are provided so as to be separated from the upper surface of the light emitting device 100, that is, the upper surfaces of the first protrusions 101b and 101b ′ are covered with the sealing member 104. Is preferred. As described above, the side surfaces of the first projecting portions 101b and 101b ′ are exposed, and the solder crawls up on the side surfaces. Solder can reach the top surface of the light emitting device. This is because the light emitting surface from which light is emitted may be contaminated with solder or solder flux, resulting in a problem that the performance as a light emitting device is deteriorated.

The first flat portions 101a and 101a ′ of the first conductive members 101 and 101 ′ are portions to which the conductive wires 105 and 105 ′ for electrical connection with the light emitting element 103 are bonded, and are necessary for bonding. What is necessary is just to have an area at least. The conductive wire may be connected not only to the first flat portions 101a and 101a 'but also to the upper surfaces of the first protruding portions 101b and 101b'. Further, in the present application, the flat portion is used to distinguish from the protruding portion, but it may have not only a flat plane but also fine unevenness, grooves, holes, and the like. In the case where the electrode of the light emitting element and the first conductive member are directly electrically connected without using a conductive wire, the first flat portion is provided so as to have a region where the electrode of the light emitting element can be joined. . The lower surfaces of the first conductive members 101 and 101 'form the outer surface of the optical semiconductor device, preferably a substantially flat surface, and may have fine irregularities or the like.

Further, the side surfaces of the first flat portions 101a and 101a ′ and the first protruding portions 101b and 101b ′ may be flat surfaces, but considering the adhesion to the sealing member 104 and the like, a partially enlarged view of FIG. 1A. It is preferable to have a protrusion X as shown in the figure. The protrusion X is preferably provided at a position separated from the lower surfaces of the first conductive members 101 and 101 ′, thereby causing problems such as the first conductive members 101 and 101 ′ dropping off from the sealing member 104. It becomes difficult to occur. In particular, it is preferably provided on the side surfaces of the first flat portions 101a and 101a ′, and as shown in FIG. 1A, the projections are formed on both the first flat portions 101a and 101a ′ and the first projecting portions 101b and 101b ′. It is preferable to provide the part X. Further, by dropping the side surfaces of the first conductive member and the second conductive member so that the side surfaces are inclined toward the lower surface rather than the protrusions, they can be prevented from falling off.

The protrusion X can be provided at any position within the periphery of the first conductive members 101 and 101 ′ as long as it is different from the outer surface of the light emitting device 100. It can be provided partially, for example, only on two side surfaces. Moreover, in order to prevent falling off more reliably, it is preferable to form over the whole periphery of the unexpected conductive member which forms an outer surface.

(Second Conductive Member) In this embodiment, the second conductive member 102 has an upper surface on which the light emitting element 103 is placed and a lower surface that forms the outer surface of the light emitting device 100, as shown in FIG. 1A. ing. In addition, in this embodiment, the side surface of the second conductive member 102 does not function as an electrode. Therefore, as shown in FIG. 1B, all the side surfaces are covered with the sealing member. That is, it can be provided so as to be separated from the side surface of the light emitting device 100. Thereby, when obtaining the light emitting device separated by cutting, the cutting blade can be cut so as not to come into contact with the second conductive member, so that cutting becomes easy. Further, the second conductive member may be provided so that a part thereof forms the outer surface of the light emitting device 100, that is, reaches the side surface of the light emitting device 100 (not shown). Since the light emitting element is mounted on the second conductive member, heat dissipation can be improved by increasing the area.

The upper surface of the second conductive member 102 only needs to have an area larger than the area on which the light emitting element 103 can be placed, and has a polygonal shape or a cutout in addition to a substantially rectangular shape in top view as shown in FIG. 1B. It can be in various shapes such as a shape it has. The region where the light-emitting element 103 is placed is preferably a flat surface, and a protective element or the like can be placed in addition to the light-emitting element.

The side surface of the second conductive member 102 may be a flat surface, but considering the adhesion to the sealing member 104 and the like, the side surface of the second conductive member 102 has a protrusion X as shown in FIG. 1A as in the first conductive member. Is preferable. The protrusion X is preferably provided at a position separated from the lower surface of the second conductive member 102, thereby preventing problems such as the second conductive member 102 falling off the sealing member 104. The protrusion X can be provided at an arbitrary position around the second conductive member 102, and can be provided partially, for example, only on two opposing side surfaces of the conductive member having a square shape in a top view. Moreover, in order to prevent dropping more reliably, it is preferable to form over the entire periphery of the second conductive member.

Although it is preferable to use the same material for the first conductive member and the second conductive member, different materials may be used. A material that can reflect light from the light-emitting element is preferable. Specific materials include metals such as copper, aluminum, gold, silver, tungsten, iron, nickel or iron-nickel alloys, eutectic solder such as phosphor bronze, iron-containing copper, molybdenum, Au-Sn, SnAgCu, SnAgCuIn. Such as solder, ITO and the like. Among these solder materials, those that are adjusted to a composition that is not re-dissolved during additional heat treatment such as reflow mounting, especially when the composition is controlled and once melted and solidified by the reaction between the solder particles and the first metal part are preferable. These can be used as a single substance or an alloy, and moreover, a plurality of layers such as lamination (plating) can be provided.

(Sealing member) The sealing member covers the light emitting element and is provided so as to be in contact with the first conductive member and the second conductive member. The light emitting element, the protective element, and further a conductive wire, etc. It is a member that protects the electronic parts from dust, moisture, and even external force.

In this embodiment, this sealing member functions as a conductive member or a constituent member that fixes the conductive member. That is, as shown in FIG. 1A and the like, the light-emitting element 103 and the conductive wires 105 and 105 ′ are covered and the outer surface of the light-emitting device 100 is not only formed, but also the first conductive member. It is provided as a member that forms the outer surface on the lower surface side of the light emitting device 100 between 101a, 101a ′ and the second conductive member 102. By fixing all the members with the sealing member 104 in this way, it is possible to realize simplification of the process and cost reduction.

As a material for the sealing member, a material having a light-transmitting property capable of transmitting light from the light-emitting element and having light resistance that is not easily deteriorated by them is preferable. Specific examples of the material include a silicone resin composition, a modified silicone resin composition, an epoxy resin composition, a modified epoxy resin composition, and an acrylic resin composition. A composition can be mentioned. Furthermore, a silicone resin, an epoxy resin, a urea resin, a fluororesin, and a hybrid resin containing at least one of these resins can also be used. Furthermore, it is not limited to these organic materials, and inorganic materials such as glass and silica sol can also be used. In addition to such materials, a colorant, a light diffusing agent, a light reflecting material, various fillers, a wavelength conversion member (fluorescent member), and the like can be included as desired. The filling amount of the sealing member may be an amount that covers the electronic component.

The shape of the outer surface of the sealing tree member can be variously selected according to the light distribution characteristics. For example, the directivity can be adjusted by making the upper surface into a convex lens shape, a concave lens shape, a Fresnel lens shape, or the like. In addition to the sealing member, a lens member may be provided.

Although the light emitting device has been mainly described above, the light receiving device is substantially the same as described above. As a sealing member to be used, the purpose is to increase the light incident efficiency or avoid secondary reflection inside the light receiving device. A colored filler such as white or black may be used. In particular, in order to avoid the influence of visible light, it is preferable to use a black colored filler-containing sealing member for an infrared light emitting device or an infrared detection device.

(Jointing member) A joining member is a joining member for mounting and connecting a light emitting element, a protection element, etc. on a 1st electrically-conductive member or a 2nd metal material, and electroconductive joining by the board | substrate of the mounted element. Either a member or an insulating bonding member can be selected. For example, in the case of a semiconductor light emitting device in which a nitride semiconductor layer is laminated on sapphire, which is an insulating substrate, the bonding member can be used either insulating or conductive, and when using a conductive substrate such as a SiC substrate, Conductivity can be achieved by using a conductive bonding member. As the insulating bonding member, an epoxy resin, a silicone resin, or the like can be used. When these resins are used, a metal layer having a high reflectance such as an Al or Ag film or a dielectric reflecting film can be provided on the back surface of the light emitting element in consideration of deterioration due to light or heat from the semiconductor light emitting element. In this case, a method such as vapor deposition, sputtering, or bonding a thin film can be used. In addition, as the conductive die bond member, a conductive paste such as silver, gold, or palladium, solder such as Au—Sn eutectic, or a brazing material such as a low melting point metal can be used. Further, among these die bond members, in particular, when a translucent die bond member is used, a fluorescent member that absorbs light from the semiconductor light emitting element and emits light of a different wavelength can be included therein.

(Conductive wire) The conductive wire that connects the electrode of the light-emitting element to the first conductive member and the second conductive member is conductive using metals such as gold, copper, platinum, and aluminum, and alloys thereof. Wire. In particular, it is preferable to use gold excellent in thermal resistance.

(Wavelength conversion member) In the said sealing member, the fluorescent member which absorbs at least one part of the light from a semiconductor light-emitting device and emits the light which has a different wavelength as a wavelength conversion member can also be contained.

As the fluorescent member, it is more efficient to convert the light from the semiconductor light emitting element into a longer wavelength. The fluorescent member may be formed of a single type of fluorescent material or the like, or may be formed of a single layer in which two or more types of fluorescent material are mixed, or contains one type of fluorescent material, etc. Two or more single layers may be stacked, or two or more single layers each of which is mixed with two or more kinds of fluorescent substances may be stacked.

As the fluorescent member, for example, when a semiconductor light-emitting element having a nitride-based semiconductor as a light-emitting layer is used as the light-emitting element, any member that absorbs light from the light-emitting element and converts it into light of a different wavelength may be used. For example, it is mainly activated by nitride phosphors / oxynitride phosphors mainly activated by lanthanoid elements such as Eu and Ce, lanthanoid elements such as Eu, and transition metal elements such as Mn. Alkaline earth halogen apatite phosphor, alkaline earth halosilicate phosphor, alkaline earth silicate phosphor, alkaline earth metal borate halogen phosphor, alkaline earth metal aluminate phosphor, alkaline earth silicic acid Salts, alkaline earth sulfides, alkaline earth thiogallates, alkaline earth silicon nitrides, germanates, or rare earth aluminates, rare earth silicates or Eus that are mainly activated with lanthanoid elements such as Ce It is preferably at least one selected from organic and organic complexes mainly activated by lanthanoid elements. Preferably, Y ₃ Al ₅ O ₁₂ : Ce, (Y _0.8 Gd _0.2 ) ₃ Al ₅ O ₁₂ : Ce, which is a rare earth aluminate phosphor mainly activated by a lanthanoid element such as Ce. Y ₃ (Al _0.8 Ga _0.2 ) ₅ O ₁₂ : Ce, (Y, Gd) ₃ (Al, Ga) ₅ O ₁₂ is a YAG phosphor represented by a composition formula. Further, there are Tb ₃ Al ₅ O ₁₂ : Ce, Lu ₃ Al ₅ O ₁₂ : Ce, etc. in which a part or all of Y is substituted with Tb, Lu, or the like. Furthermore, phosphors other than the above phosphors and having the same performance, function, and effect can be used.

(Semiconductor Light Emitting Element) In the present invention, it is preferable to use a light emitting diode as a semiconductor light emitting element (also simply referred to as a light emitting element).

A semiconductor light emitting device having an arbitrary wavelength can be selected. For example, the blue, the green light emitting element, ZnSe and nitride semiconductor _{(In X Al Y Ga 1-} X-Y N, 0 ≦ X, 0 ≦ Y, X + Y ≦ 1), used after using GaP be able to. As the red light emitting element, GaAlAs, AlInGaP, or the like can be used. Furthermore, a semiconductor light emitting element made of a material other than this can also be used. The composition, emission color, size, number, and the like of the light emitting element to be used can be appropriately selected according to the purpose.

In the case of a light-emitting device having a fluorescent material, a nitride semiconductor (In _X Al _Y Ga _1- XYN, 0 ≦ X, 0 ≦ Y, X + Y ≦ 1) is preferable. Various emission wavelengths can be selected depending on the material of the semiconductor layer and the degree of mixed crystal.

Further, a light-emitting element that outputs not only light in the visible light region but also ultraviolet rays and infrared rays can be obtained. Furthermore, a light receiving element or the like can be mounted together with the light emitting element or alone.

Examples of the light receiving element include a photo IC, a photodiode, a phototransistor, a CCD (charge coupled device) image sensor, a CMOS image sensor, and a Cd cell.

<Embodiment 2> The light-emitting device 200 of Embodiment 2 is shown to FIG. 2A and FIG. 2B. 2A is a cross-sectional view taken along the line B-B ′ of the light emitting device according to FIG. 2B, and FIG. 2B is a top view showing the light emitting device according to Embodiment 2.

In Embodiment 2, the light-emitting device 200 includes the light-emitting element 203, the first conductive member 201 electrically connected to the light-emitting element 203, and the first conductive member 201. And a sealing member 204 that covers the light emitting element 203 and is in contact with the first conductive member 201 and the second conductive member 202. The first conductive member 201 and the second conductive member 202 each have a lower surface that forms the outer surface of the light emitting device 200, and the first conductive member 201 has an upper surface that is electrically connected to the light emitting element 203. The first flat portion 201a has a first protrusion 201b having an upper surface protruding from the first flat portion 201a. The second conductive member 202 has a second flat portion 202a to which the conductive wire 205 'is connected, and a second protruding portion 202b protruding from the second flat portion 202a. The first protrusion 201b and the second protrusion 402b have at least part of their side surfaces forming the outer surface of the light emitting device 200.

The second embodiment is different from the first embodiment in that the second conductive member is used so as to function also as an electrode of the light emitting device, and the other members are the same as those of the first embodiment.

As shown in FIGS. 2A and 2B, the second conductive member 202 includes a second flat portion 202a on which the light emitting element 203 is mounted and a conductive wire 205 ′ is bonded, A second projecting portion 202b having an upper surface projecting from the flat portion 202a. The second flat portion 202a needs to have at least an area where the light emitting element 203 can be placed, and has a size that can secure a region to which the conductive wire 205 'is bonded. However, when the substrate of the light emitting element 203 is conductive, for example, in the case of a GaN-based light emitting element using a SiC substrate, for example, conduction can be achieved by bonding to the second flat portion 202a using a conductive bonding member. In such a case, the area that allows the light emitting element to be mounted may be sufficient.

The second protrusion 202b preferably has the same width and height as the first protrusion 201b having an upper surface protruding from the first flat portion 201a of the first conductive member 201, and in particular, a light emitting device. It is preferable that the side surface of the protruding portion serving as the outer surface of the 200 has substantially the same width and height.

In Embodiment 2, since the first conductive member 201 and the second conductive member 202 form a pair of positive and negative electrodes, it is sufficient that the first conductive member has at least one or more. .

<Embodiment 3> The light-emitting device 300 concerning Embodiment 3 is shown in FIG. FIG. 3 is a cross-sectional view of the light emitting device 300 according to the present invention, and the top view is a light emitting device 300 having a substantially rectangular outer shape as shown in FIG. 1B. The light emitting device 300 includes a light emitting element 303 and a light emitting element 303. The first conductive members 301 and 301 ′ electrically connected to the first conductive members 301 and 301 ′, the second conductive member 302 on which the light emitting element 303 is placed, and the light emitting element 303. And a sealing member 304 that is in contact with the first conductive members 301 and 301 ′ and the second conductive member 302. The lower surfaces of the first conductive members 301 and 301 ′ and the second conductive member 302 form the outer surface of the light emitting device 300, and the first conductive members 301 and 301 ′ are electrically connected to the light emitting element 303. 1st flat part 301a, 301a 'which has the upper surface connected to 1st, and 1st protrusion part 301b, 301b' which has the upper surface which protrudes from 1st flat part 301a, 301a '. The first protrusions 301 b and 301 b ′ have at least part of the side surfaces forming the outer surface of the light emitting device 300, and the first conductive members 301 and 301 ′ and the second conductive member 302 A substrate 306 made of a resin capable of blocking light from the light emitting element 303 is provided therebetween. Other members and the like are the same as those in the first embodiment. The second conductive member can also be used as an electrode, and the other members are the same as in the second embodiment.

(Substrate) In the third embodiment, the substrate 306 is a resin provided between the first conductive members 301 and 301 ′ and the second conductive member 302, and is made of a resin capable of blocking light from the light emitting element 303. Become. By providing the light-blocking base 306 at such a position, light from the light-emitting element 303 can be prevented from leaking from the lower surface side of the light-emitting device 300 to the outside. Efficiency can be improved.

The thickness of the base 306 may be any thickness as long as light leakage to the lower surface side of the light emitting device 300 can be suppressed, and the side surfaces of the first conductive members 301 and 301 ′ and the side surfaces of the second conductive members Preferably, the sealing member 304 is provided so as not to be interposed between the first conductive members 301 and 301 ′ and the base body 306 and between the second conductive member 302 and the base body 306. .

When the width of the light emitting device 300 is different from the widths of the first conductive members 301 and 301 ′ and the second conductive member 302, for example, the width of the first conductive member 102 (302) is narrow as shown in FIG. In the case where the side surface of the first conductive member and the side surface of the light emitting device 100 (300) are separated from each other, a base can also be provided in that portion. By doing in this way, the lower surface of the light emitting device 300 is formed with the first conductive members 301 and 301 ′, the base body 306, and the second conductive member 302 as outer surfaces, and light in the lower surface direction. Can be efficiently suppressed. Further, the upper surfaces of the first flat portions 301 a and 301 a ′ and the upper surface of the second metal portion 302 may be partially covered.

The substrate may be any substrate that can block light from the light-emitting element, and an insulating member is preferably used. As a preferable material, a resin such as a thermosetting resin or a thermoplastic resin can be used. Specifically, an epoxy resin, a polyimide resin, or the like can be used. In these resins, TiO ₂ , SiO ₂ , Al _{2 can be used.} It is preferable that light transmittance is adjusted by mixing O ₃ or the like so that about 60% or more of light from the light emitting element is shielded, more preferably, about 90% is shielded. Here, either the light may be reflected or absorbed by the substrate, but it is more preferable to shield the light by reflecting it. Therefore, it is preferable that the reflectance with respect to the light from the light emitting element is 60% or more, more preferably 90% or more.

<Embodiment 4> The light-emitting device 400 concerning Embodiment 4 is shown to FIG. 4A and FIG. 4B. 4A is a perspective view showing the inside of the light-emitting device 400 according to the present invention, and FIG. 4B is a cross-sectional view taken along the line C-C ′ in a state where the concave portion of the light-emitting device 400 according to FIG. 4A is sealed.

In Embodiment 4, the light-emitting device 400 includes the light-emitting element 403 and the protective element 410, the first conductive member 401 that is electrically connected to the light-emitting element 403 and the protective element 410, and the first conductive member 401. And a second conductive member 402 on which the light emitting element 403 is placed, and a sealing member 404 that covers the light emitting element 403 and is in contact with the first conductive member 401 and the second conductive member 402. Yes. The first conductive member 401 and the second conductive member 402 each have a lower surface that forms the outer surface of the light emitting device 400, and the first conductive member 401 has an upper surface that is electrically connected to the light emitting element 403. The first flat portion 401a has a first protrusion 401b having an upper surface protruding from the first flat portion 401a. The second conductive member 402 includes a second flat portion 402a to which the conductive wire 405 ′ is connected, and a second protruding portion 402b protruding from the second flat portion 402a. At least part of the side surfaces of the first protrusion 401 b and the second protrusion 402 b form the outer surface of the light emitting device 400. The first conductive member 401 and the second conductive member 402 have a base 406 made of a resin capable of blocking light from the light emitting element 403, and the conductive member conductive member has a base 406. It is characterized by having a shape having a bottom surface 406a and a side wall 406b in which the first protrusion 401b and the second protrusion 402b are embedded. Accordingly, the recess S1 is formed in the light emitting device 400, and light can be suppressed from being emitted to the side surface side of the light emitting device 400, and light can be emitted toward the upper surface direction. About other members etc., the thing similar to Embodiment 1-3 can be used.

In the first to third embodiments, since light from the light emitting element is irradiated to the first protrusion and the second protrusion, light in the side direction of the light emitting device is not emitted from that portion. On the other hand, in Embodiment 4, it is possible to block light over a wider area by providing a side wall in which the protruding portion is embedded. Further, as shown in FIG. 4B, the side wall 406b has an inclined side surface, whereby light can be easily reflected toward the top surface of the light emitting device.

<Embodiment 5> The light-emitting device 500 concerning Embodiment 5 is shown to FIG. 5A-FIG. 5D. 5A is a perspective view showing the light emitting device 500 according to the embodiment, FIG. 5B is a top view showing the inside of the light emitting device 500 according to FIG. 5A, and FIG. 5C is a bottom view of the light emitting device 500 according to FIG. FIG. 5D is a cross-sectional view taken along the line DD ′ of the light-emitting device 500 according to FIG. 5A.

In Embodiment 5, the light-emitting device 500 is separated from the light-emitting element 503, the first conductive member 501 electrically connected to the light-emitting element 503, and the first conductive member 501, and the light-emitting element 503 is placed thereon And a sealing member 504 that covers the light emitting element 503 and is in contact with the first conductive member 501 and the second conductive member 502. The lower surfaces of the first conductive member 501 and the second conductive member 502 form the outer surface of the light emitting device 500, and the first conductive member 501 has an upper surface that is electrically connected to the light emitting element 503. The first flat portion 501a has a first protrusion 501b having an upper surface protruding from the first flat portion 501a. The second conductive member 502 includes a second flat portion 502a to which the conductive wire 505 'is connected and a second protruding portion 502b protruding from the second flat portion 502a. At least part of the side surfaces of the first protrusion 501 b and the second protrusion 502 b form the outer surface of the light emitting device 500. Between the first conductive member 501 and the second conductive member 402, there is a base 506 made of a resin capable of blocking light from the light emitting element 503. The base 506 further includes a bottom 506a of the base and a first base 506a. A side wall 506b is provided to embed the first protrusion 501b and the second protrusion 502b.

The first protrusion 501b and the second protrusion 502b form the outer surface of the light emitting device 500 on two side walls of the side wall 506b of the base. Thereby, the concave portion S2 is formed in the light emitting device 500, light is suppressed from being emitted to the side surface side of the light emitting device 500, light can be emitted toward the opening of the concave portion S2, and 2 Since the first conductive member 501 and the second conductive member 502 are provided so as to form the outer surface on one side surface, it can be more stably mounted on a circuit board or the like.

Further, as shown in FIG. 5A, the first conductive member 501 and the second conductive member 502 are formed so as to form the outer surfaces on the outer surfaces F1 and F2 of the opposite side walls 506, and the common side wall 506 By forming the first conductive member 501 and the second conductive member 502 on the outer side surface F3, a side-emitting light-emitting device that can be mounted on a circuit board with the outer side F3 side as a mounting surface is provided. Can do.

When the light-emitting device 500 is used as a side-emitting type light-emitting device, the first conductive member 501 and the second conductive member 502 are formed on the lower surface of the light-emitting device 500 on the outer surface F as shown in FIG. 5C. The width L1 of the conductive member 501 and the width L2 of the second conductive member 502 are preferably provided so as to be substantially equal. Furthermore, it is preferable that the height H1 of the first conductive member 501 and the height H2 of the second conductive member on the outer surfaces F1 and F2 are substantially equal. By doing in this way, it is hard to produce malfunctions, such as one side floating at the time of mounting to a circuit board, and it can mount stably. In FIG. 5C, the second conductive member has only the width L2 portion in contact with the outer surface F3. However, the second conductive member may be provided in contact with the outer surface F3 through the notch or the like with the width L2. That is, in FIG. 5C, the second conductive member 502a in the region where the light emitting element in the substantially central portion is placed may be provided with an extending portion that extends to the outer surface F3, although not shown. By doing in this way, since the heat from the light emitting element with a large calorific value can be dissipated from a closer position, that is, through the extending portion, the heat dissipation is improved.

In the fifth embodiment, the first protrusion 501b and the second protrusion 502b are provided so that each of the metal layers has two layers, and the first protrusion of the embodiment shown in FIG. 4B is provided. The protrusions 401 b and the second protrusions 402 are provided to be higher in height. By doing in this way, since the exposed area in the mounting surface (outer surface F3 in FIG. 5A etc.) of a circuit board at the time of using as a side emission type light-emitting device can be made wider, it can mount stably.

In the fifth embodiment, as in the first embodiment, two first conductive members can be provided to function as a pair of positive and negative electrodes. Further, the other members and the like can be the same as those in the first to fourth embodiments.

<Manufacturing method 1> Hereinafter, the manufacturing method of the light-emitting device of this invention is demonstrated using figures. 6A to 6C are diagrams illustrating a process of forming a light emitting device aggregate 6000. By cutting the aggregate 6000, the light emitting device 100 described in Embodiment 1 can be obtained.

First, as shown in FIG. 6A (a), a support substrate 6070 made of a metal plate or the like is prepared, and a resist 6080 is applied to this surface. The thickness of the first conductive member and the second conductive member to be formed later can be adjusted by the thickness of the resist 6080. As a resist to be used, either a positive type or a negative type may be used. Here, a method of using a positive resist a plurality of times will be described, but a positive resist and a negative resist may be used in combination.

After the applied resist is dried, a mask 6090 having an opening is disposed on the resist, and exposure is performed by irradiating ultraviolet rays as indicated by arrows in the figure. As the ultraviolet rays used here, a suitable wavelength can be selected depending on the sensitivity of the resist 6070 and the like. Thereafter, by cleaning, a resist 6080 having an opening K is formed as shown in FIG. 6A (b).

Next, by plating using metal, a first conductive member 6010 and a second conductive member 6020 are formed in the opening K of the resist 6080 as shown in FIG. 6A (c). At this time, by adjusting the plating conditions, plating can be performed so as to be thicker than the thickness of the resist 6080, whereby the conductive member is formed even on the upper surface of the resist, and the protrusion X as shown in FIG. 1A is formed. Can be formed. After plating, the resist 6080 is cleaned and removed, and the state shown in FIG. 6A (d) is obtained. The protrusion X can be formed by crushing, baking after printing, or the like in addition to the above plating.

FIG. 6B is a process of forming the first protrusion 6081, and basically the process described in FIG. 6A is repeated. First, as shown in FIG. 6B (a), a resist 6081 is further applied to the plated support substrate 6070 obtained in FIG. 6A (d), and a mask 6091 is placed and irradiated with ultraviolet rays for exposure. At this time, the height of the first protrusion can be adjusted by the thickness of the resist 6081. Further, by using a mask 6091 having an opening smaller than the mask 6090 on the first conductive member (first flat portion) 6010, as shown in FIG. 6B (b) after exposure and cleaning. A simple opening L can be formed. Next, the first protrusion 6011 can be formed by plating as shown in FIG. 6B (c), and the resist 6081 is removed by washing, thereby removing the first protrusion 6011 as shown in FIG. 6B (d). A first conductive member 6010 in which the protruding portion 6011 is formed is obtained.

Next, as illustrated in FIG. 6C (a), the light emitting element 6030 is bonded onto the second conductive member 6020 using a bonding member (not shown), and the first conductive member 6010 is bonded using the conductive wire 6050. It is connected to the flat part. Thereafter, a sealing member 6040 is formed by a method such as printing so as to cover the light emitting element 6030 and the conductive wire 6050. Then, after the sealing member 6040 is cured, the support substrate 6070 is peeled off as shown in FIG. 6C (c).

Through the steps as described above, a light emitting device assembly 6000 as shown in FIG. 6C (d) can be obtained. Finally, by cutting at a position indicated by a broken line in FIG. 6C (d), that is, at a position where the first protrusion 6011 is cut, the first protrusion as shown in FIG. A light emitting device formed on the outer surface of the substrate can be obtained.

As described above, the plating process is performed one or more times, and the mask shape used at that time is changed, so that thick plating can be performed only at a desired position, and this thick plating portion protrudes. It can be used as a part.

<Manufacturing Method 2> In manufacturing method 2, a manufacturing method for a light-emitting device having a substrate capable of blocking light from a light-emitting element, and a method for performing a plating process a plurality of times will be described.

FIG. 7A is a process performed after FIG. 6B (d) of the manufacturing method 1, and a second protrusion is formed on the first protrusion 7011 to further increase the height of the first protrusion. This is a step of forming the portion 7011. Note that the first conductive member and the second conductive member are integral with each other until the last cutting.

First, as shown in FIG. 7A (a), a resist 7080 is applied on the already formed first protrusion, and a mask 7090 having an opening is disposed above the resist 7080 and exposed. At this time, the first protrusion having the same width can be formed by using the same opening as the previously used mask. However, different shapes can be used.

By drying and removing the resist 7080 by washing, a resist 7080 having an opening M as shown in FIG. 7A (b) can be obtained. A two-layer structure is formed by further plating on the first protrusion 7011 (second protrusion 7021) exposed in the opening M. Thereafter, the resist 7080 is washed and removed, whereby a first protrusion 7011 (second protrusion 7021) having a two-layer structure as shown in FIG. 7A (d) can be obtained.

Next, as shown in FIG. 7B (a), a base body 7060b is formed by injection molding or the like so as to embed the first projecting portion 7011 (second projecting portion 7021). As a result, the recess S3 is formed. At this time, the base body 7060a is also formed so as to fill the space between the first conductive member 7010 (second conductive member 7020) at the same time. Here, although formed simultaneously, the bottom surface portion 7060a and the side wall 7060b of the base body can be formed in different steps, and different resins can be used.

After the base body 7060 is formed, the light emitting element 7030 is bonded onto the first conductive member 7011 using a bonding member (not shown) as shown in FIG. 7B (b), and the second conductive is connected using the conductive wire 7050. Connect on member 7020.

A sealing member 7040 is provided in the recess S3 to cover the light emitting element 7030 and the like, and after the sealing member 7040 is cured, the support substrate 7070 is peeled off as shown in FIG. 7B (c).

Through the steps as described above, an aggregate 7000 of light emitting devices as shown in FIG. 7B (d) can be obtained. Finally, the part indicated by the broken line in FIG.
By cutting at a position where the side wall 7060b of the base body in which the protrusion 7011 (second protrusion 7021) is embedded is cut, the first protrusion as shown in FIG. A light emitting device formed on the surface can be obtained.

As described above, by performing the plating process a plurality of times, providing a thick plated portion that becomes a protruding portion at a predetermined position, further providing a base that embeds the protruding portion, and exposing by cutting, A light-emitting device with controlled light distribution characteristics can be obtained.

<Other manufacturing method> The first protrusion and the second protrusion are not formed by the plating method as described above, but the conductive member is dropped, vapor deposition using a mask, sputtering, printing, wire bonding apparatus, or the like. A method of forming Au bumps and Cu bumps using various materials, various plasma CVD methods, and the like can also be used.

In the optical semiconductor device according to the present invention, since the conductive member to be an electrode can be formed high (thick) in the region exposed to the outside of the optical semiconductor device, it can be firmly mounted when mounted on a circuit board or the like. These optical semiconductor devices are also used for various display devices, lighting fixtures, displays, backlight light sources for liquid crystal displays, as well as image reading devices and projector devices in digital video cameras, facsimiles, copiers, scanners, etc. be able to.

1A is a cross-sectional view and a partially enlarged view of the light emitting device according to FIG. 1B, taken along the line A-A ′. FIG. 1B is a top view showing a light emitting device according to the present invention. 2A is a cross-sectional view of the light-emitting device according to FIG. 2B, taken along the line B-B ′. FIG. 2B is a top view showing the light emitting device according to the present invention. FIG. 3 is a cross-sectional view of the light emitting device according to the present invention. FIG. 4A is a perspective view showing the inside of the light emitting device according to the present invention. FIG. 4B is a cross-sectional view taken along the line C-C ′ in a state where the concave portion of the light emitting device according to FIG. 4A is sealed. FIG. 5A is a perspective view showing a light emitting device according to the present invention. FIG. 5B is a top view showing the inside of the light emitting device according to FIG. 5A. FIG. 5C is a bottom view of the light emitting device according to FIG. 5A. FIG. 5D is a cross-sectional view taken along the line D-D ′ of the light emitting device according to FIG. 5A. FIG. 6A is a process diagram illustrating a method for manufacturing a light-emitting device according to the present invention. FIG. 6B is a process diagram illustrating a method for manufacturing the light emitting device according to the present invention. FIG. 6C is a process diagram illustrating a method for manufacturing a light-emitting device according to the present invention. FIG. 7A is a process diagram illustrating a method for manufacturing a light emitting device according to the present invention. FIG. 7B is a process diagram illustrating a method for manufacturing the light emitting device according to the present invention.

100, 200, 300, 400, 500... Light emitting devices 101, 101 ′, 201, 301, 401, 501... First conductive members 101a, 101a ′, 201a, 301a, 301a ′, 401a, 501a,. .. First flat portions 101b, 101b ′, 201b, 401b, 501b... First protrusions 102, 202, 302, 402, 502... Second conductive members 202a, 402a, 502a. 2nd flat part 202b, 402b, 502b ... 2nd protrusion part 103, 203, 303, 403, 503 ... Conductive member Light-emitting element 104, 204, 304, 404, 504 ... Sealing member 105 105 ′, 205, 205 ′, 305, 305′405, 405′505, 505 ′... Conductive wires 106, 406, 406a, 06b ′, 506, 506a, 506b ′... Base body 406a, 506a... Base body bottom portion 406b, 506b... Base body side wall 410 ... Protection element 6000, 7000. , 7010... First conductive members 6011, 7011... First protrusions 6020, 7020... Second conductive members 6030, 7030 ... Light emitting elements 6040, 7040. , 7050 ... conductive wires 6070, 7070 ... support substrates 6080, 6081, 7080 ... resists 6090, 6091, 7090 ... masks 7060, 7060a, 7060b ... base X ... projection S1 , S2, S3 ... concave portions F1, F2, F3 ... outer surface

Claims (7)

An optical semiconductor element;
A first conductive member electrically connected to the optical semiconductor element and a second conductive member spaced from the first conductive member;
A method for manufacturing an optical semiconductor device, comprising: a sealing member that covers the optical semiconductor element and contacts the first conductive member and the second conductive member;
A first step of forming flat portions of the first conductive member and the second conductive member by plating on a support substrate;
A second step of forming a protrusion on the upper surface of the flat portion by plating;
A third step of connecting the optical semiconductor element to the upper surface of the flat portion;
A fourth step of removing the support substrate after the second step;
And a fifth step of dividing the assembly of the optical semiconductor devices obtained by the method including the steps 1 to 4 into individual pieces . 2. The optical semiconductor according to claim 1, wherein in the first step and the second step, a resist is used and plating is performed so as to be thicker than the thickness of the resist to form a protrusion on a side surface of the conductive member. Device manufacturing method . 3. The method of manufacturing an optical semiconductor device according to claim 1, wherein, in the second step, plating is performed a plurality of times, and the protrusions are formed in a plurality of layers . 4. The method according to claim 1, wherein in the fifth step, the protrusion is separated into pieces at positions where the protrusion is cut such that at least one side surface of the protrusion forms an outer surface of the optical semiconductor device. The manufacturing method of the optical semiconductor device of description . 5. The method according to claim 1, further comprising: forming a base with a resin capable of blocking light from the optical semiconductor element, wherein the bottom surface of the base is formed so as to fill between the conductive members. Manufacturing method of optical semiconductor device . 6. The method of manufacturing an optical semiconductor device according to claim 5, wherein a side wall of the base is formed . The method for manufacturing an optical semiconductor device according to claim 6, wherein the side wall is formed so as to bury the protruding portion .

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