JP5651068B2 - Semiconductor resistance element and semiconductor module having semiconductor resistance element - Google Patents

Description

  The present invention relates to a semiconductor resistance element and a semiconductor module having the semiconductor resistance element, and in particular, a semiconductor in which a resistance value of a resistance element layer is prevented from changing due to a potential difference between a potential of the resistance element layer and a potential of a semiconductor substrate or the like in the vicinity. The present invention relates to a resistance element and a semiconductor module having a semiconductor resistance element.

  In manufacturing a desired semiconductor module, various elements such as a resistance element, a capacitance element, and a switching element are combined. For this reason, it is desirable that each element integrated in the semiconductor module has the same characteristics as possible. When the resistance element is described as an example, if the resistance value of the resistance element changes, the resistance value of the entire semiconductor module configured by using a plurality of the resistance elements changes, and the semiconductor module is configured. This is not very desirable.

However, the resistive element layer of many resistive elements is a polysilicon layer or a diffusion layer formed using polysilicon. For this reason, a potential difference is generated between the potential of the resistive element layer and the potential of a peripheral semiconductor substrate or the like such as the upper surface or the lower surface of the resistive element layer. Then, the spread state of the air poor layer may change, and the width of the conductive region may change. Thereby, the resistance value of the resistance element changes from the original resistance value.
It is necessary to suppress a change in resistance value due to a potential difference between such a resistance element layer and a semiconductor substrate around the resistance element layer. Therefore, there is a semiconductor device 100 of Patent Document 1 as shown in FIG. 12 as a resistance element that suppresses a change in resistance value.

  In the semiconductor device 100 shown in FIG. 12, a P-type diffusion region 103 is formed on the main surface of an N-type island region 102 formed on a P-type semiconductor substrate 101. On this surface, a first electrode 104 for applying a high potential voltage and a second electrode 105 for applying a low potential voltage are provided, and on the surface of the island region 102 outside the surface of the P-type diffusion region 103. A third electrode 106 for applying a high potential voltage and a fourth electrode 107 for applying a low potential voltage are provided. As a result, the semiconductor device 100 is configured such that the potential distribution of the island region 102 follows the potential distribution of the P-type diffusion region 103.

In addition to the semiconductor device 100, there is a semiconductor device 200 of Patent Document 2 as shown in FIG.
This semiconductor device 200 includes an epitaxial layer 202 formed on a semiconductor substrate 201, a buried layer 203 formed inside the epitaxial layer 202, and a buried layer having the same depth as the buried layer 203. An annular element isolation region 204 formed away from the layer 203 and an N + type layer 205 formed in the annular element isolation region from the surface of the epitaxial layer 202 are included.

  A LOCOS oxide film 206, a polysilicon resistor 207, and an interlayer insulating film 208 are sequentially formed on the surface, and electrodes 210 to 212 are formed at three locations of the interlayer insulating film 208 on the polysilicon resistor 207. Yes. Further, an electrode 213 is formed above the N + type layer 205. At this time, the three electrodes 210 to 212 are arranged at substantially the center position of the polysilicon resistor 207 so that the distance between the electrode 212 and the electrode 210 is equal to the distance between the electrode 212 and the electrode 211. The electrode 212 and the electrode 213 are connected by a wiring 209 so that the same potential can be maintained.

Japanese Patent Laid-Open No. 5-190773 Japanese Patent No. 4383016

However, in the semiconductor device 100 of Patent Document 1 described above, a current also flows through the conductive island region 102 on the lower surface of the diffusion region 103 that forms the resistance element. Therefore, there is a problem that the semiconductor device 100 consumes useless current.
In the semiconductor device 200 of Patent Document 2, the electrode 212 and the electrode 213 are connected by the wiring 209 so that the same potential can be maintained by the wiring 209. For this reason, useless capacitive load is added to the middle point of the polysilicon resistor 207. For this reason, the semiconductor device 200 may cause distortion in the signal.
Therefore, in view of the above problems, the present invention provides a potential difference between a potential of a resistance element layer and a potential of a semiconductor substrate, a power supply line, a signal line, and the like in the vicinity without causing unnecessary current and signal distortion. An object of the present invention is to provide a semiconductor resistance element and a semiconductor module having the semiconductor resistance element that can suppress the resistance value of the resistance element layer from changing due to the above.

In order to achieve the above object, the semiconductor resistance element and the semiconductor module having the semiconductor resistance element according to the present invention are configured as follows.
A first semiconductor resistance element according to the present invention is formed on a semiconductor substrate, is parallel to a single potential conductive layer in the periphery of the self-layer, and includes a resistance element layer formed via an interlayer insulating film. A first electrode formed to be conductive to one end of the resistive element layer, and a second electrode formed to be conductive to the other end of the resistive element layer. The resistance element layer has a resistance region that actually functions as a resistance between a position where the first electrode is formed and a position where the second electrode is formed. At least one positive electrode region in which the resistance value change coefficient of the resistance value change component that changes depending on the potential difference from the electric potential of the conductive layer is a positive value, and a negative electrode region in which the resistance value change coefficient is a negative value. In the positive electrode region or the negative electrode region from the reference position of the resistance region And the index value for the amount of resistance between the up position, and wherein the resistance value of the positive electrode region or the negative electrode region, the sum of the product of the resistance change coefficients are formed so as to zero To do.

According to the first semiconductor resistance element, the resistance element layer is a resistance region that actually functions as a resistance between the position where the first electrode is formed and the position where the second electrode is formed. And at least one of a positive electrode region and a negative electrode region. In general, a semiconductor resistance element has a resistance value changing component caused by a potential difference between a potential of a resistance element layer and a potential of a peripheral semiconductor substrate or the like. Then, an index value having a resistance value between the reference position and the center position of the positive electrode region or the center position of the negative electrode region, the resistance value of the positive electrode region or the negative electrode region, and the resistance value change coefficient The resistive element layer is formed so that the sum of products becomes zero.

  Accordingly, when the potential of the first electrode is fixed, the resistance value change component can be balanced between the positive electrode region and the positive electrode region. Therefore, it is possible to prevent the resistance value of the resistance element layer from changing due to the above-described potential difference without generating a useless current in the periphery of the resistance element layer and without applying a useless capacitive load to the resistance element layer. It becomes possible.

In the second semiconductor resistance element according to the present invention, in the resistance element layer, the position where the positive electrode region and the negative electrode region are connected in series with each other and the first electrode is formed is the reference position. It was formed as follows.
As a result, the reference position is the position where the first electrode is formed, the resistance value changing component that changes due to the potential difference between the potential of the positive electrode region of the resistive element layer and the potential of the surrounding semiconductor substrate, and the like. The resistance value of the resistive element layer changes by offsetting the resistance value change component of the positive electrode region and the resistance value change component of the negative electrode region, which change due to the potential difference between the potential of the negative electrode region and the potential of the surrounding semiconductor substrate, etc. Can be suppressed.

A third semiconductor resistance element according to the present invention is formed on a semiconductor substrate, is parallel to a single potential conductive layer in the periphery of the self-layer, and includes a resistance element layer formed via an interlayer insulating film. A first electrode formed to be conductive to one end of the resistive element layer, and a second electrode formed to be conductive to the other end of the resistive element layer. The resistance element layer has a resistance region that actually functions as a resistance between a position where the first electrode is formed and a position where the second electrode is formed. At least one positive electrode region in which the resistance value change coefficient of the resistance value change component that changes depending on the potential difference from the electric potential of the conductive layer is a positive value, and a negative electrode region in which the resistance value change coefficient is a negative value. In the positive electrode region or the negative electrode region from the reference position of the resistance region And the index value for the amount of resistance between the up position, the and the resistance value of the positive electrode region or the negative electrode region, the sum of the product of the resistance value change coefficient becomes zero, and the positive electrode region or the negative electrode The total sum of the products of the resistance value of the region and the resistance value change coefficient is formed to be zero.

According to the third semiconductor resistance element described above, the index value that takes the resistance value from the reference position to the center position of the positive electrode region or the center position of the negative electrode region, and the resistance of the positive electrode region or the negative electrode region The resistance element layer is formed so that the sum of the products of the value and the resistance value change coefficient becomes zero and the sum of the products of the resistance value and the resistance value change coefficient becomes zero.
Thereby, when the potential of the first electrode is not fixed, the resistance value change component of the positive electrode region and the resistance value change of the negative electrode region caused by the potential difference between the potential of the resistance element layer and the potential of the surrounding semiconductor substrate, etc. By canceling out the components, it is possible to suppress the resistance value of the resistive element layer from changing.

In a fourth semiconductor resistance element according to the present invention, the resistance element layer is configured such that the positive electrode region and the negative electrode region are connected in series, and a center position between both ends of the resistance region is the reference position. It is characterized by being formed.
According to the fourth semiconductor resistance element, the resistance element layer is formed such that the positive electrode region and the negative electrode region are connected in series. When, for example, three regions are formed in the resistance element layer in such a connection form, the center position between both ends of the resistance region is set as a reference position.
As a result, the resistance value change component of the positive electrode region and the resistance value change component of the negative electrode region caused by the potential difference between the potential of the resistance element layer and the potential of the surrounding semiconductor substrate, etc. are offset, and the resistance value of the resistance element layer Can be prevented from changing.

  A fifth semiconductor resistance element according to the present invention is formed on a semiconductor substrate, runs parallel to a single potential conductive layer in the periphery of the self-layer, and includes a resistance element layer formed via an interlayer insulating film. A first electrode formed to be conductive to one end of the resistive element layer, and a second electrode formed to be conductive to the other end of the resistive element layer. The resistance element layer has a resistance region that actually functions as a resistance between a position where the first electrode is formed and a position where the second electrode is formed. At least one positive electrode region in which the resistance value change coefficient of the resistance value change component that changes depending on the potential difference from the electric potential of the conductive layer is a positive value, and a negative electrode region in which the resistance value change coefficient is a negative value. The positive electrode region and the negative electrode region are connected in parallel to each other, and The resistance value of the region or the negative electrode region, wherein the sum of the product of the resistance change coefficients are formed so as to become zero.

According to the fifth semiconductor resistance element, the resistance element layer is formed such that the positive electrode region and the negative electrode region are connected in parallel.
In such a case, in order to cancel out the resistance value change component of the positive electrode region and the resistance value change component of the negative electrode region, the positive electrode region is set so that the sum of the products of the resistance value and the resistance value change coefficient becomes zero. And a negative electrode region may be formed.
As a result, as in the case where the positive electrode region and the negative electrode region are connected in series, the resistance value changing component of the positive electrode region and the negative electrode caused by the potential difference between the potential of the resistive element layer and the potential of the surrounding semiconductor substrate, etc. It is possible to suppress a change in the resistance value of the resistance element layer by canceling out the resistance value change component of the region.

In a sixth semiconductor resistance element according to the present invention, the resistance element layer is formed so as to have at least one of the positive electrode region and the negative electrode region by implanting or diffusing impurity ions of different types and concentrations. It is characterized by that.
According to the sixth semiconductor resistance element, the resistance element layer is formed so that the resistance element layer has at least one of a positive electrode region and a negative electrode region by implanting or diffusing impurity ions of different types and concentrations. It becomes possible to do. For example, when the resistance element layer is formed of polysilicon, the positive electrode region can be formed by implanting or diffusing ions of Group 13 ions. Further, the negative electrode region can be formed by implanting or diffusing 15 group ions.

The seventh semiconductor resistance element according to the present invention is characterized in that the resistance element layer is a polysilicon layer formed using polysilicon as a material.
According to the seventh semiconductor resistance element, as described above, since the resistance value of the resistance element layer can be suppressed from changing, the resistance element layer is formed. In this case, it is possible to use a material whose resistance value is relatively easy to change due to the potential difference with the potential at the peripheral portion of the resistive element layer. It is also possible to use the same material as that used in the conventional semiconductor resistance element.

An eighth semiconductor resistance element according to the present invention is characterized in that the resistance element layer is a diffusion layer.
According to the eighth semiconductor resistance element, since the resistance element layer is formed using the polysilicon used in the conventional semiconductor resistance element, the same action as the eighth semiconductor resistance element is provided. Can be obtained.

In a ninth semiconductor resistance element according to the present invention, the conductive layer is a semiconductor layer, a layer formed in a different component or formation process from the resistance element layer, or a metal layer formed using metal. Features.
According to the ninth semiconductor resistance element described above, the same material as that of the conventional semiconductor resistance element can be used to form the conductive layer.

A tenth semiconductor resistance element according to the present invention is characterized by having auxiliary electrodes for electrically connecting the resistance element layers to each other.
According to the tenth semiconductor resistance element described above, the auxiliary electrode connects the positive electrode region and the negative electrode region to each other. For example, there may be a region where impurity ions are not implanted at the connection portion between the positive electrode region and the negative electrode region, and it may be difficult to directly connect the positive electrode region and the negative electrode region. In such a case, it is possible to connect the positive electrode region and the negative electrode region, which are difficult to connect directly, to each other using the auxiliary electrode. Further, by using the auxiliary electrode, it is possible to reinforce the connection between the resistive element layers.

A semiconductor module according to the present invention has at least one semiconductor resistance element of any one of the first to tenth semiconductor resistance elements, and has at least one semiconductor element of a type different from the semiconductor resistance element. It is characterized by that.
According to said semiconductor module, it has any one semiconductor resistive element of said 1st-10th semiconductor resistive element, and also has a capacitive element etc., and is comprised. As described above, the first to tenth semiconductor resistance elements do not generate a wasteful current in the peripheral portion of the resistance element layer, and do not add a wasteful capacitive load to the resistance element layer. It is possible to suppress a change in the resistance value due to the influence of the potential difference between the potential and the potential of the semiconductor substrate or the like around the resistance element layer. Therefore, even in the semiconductor module configured using the first to tenth resistance elements, the entire resistance value of the semiconductor module changes without generating unnecessary current and without applying unnecessary capacitive load. Can be suppressed.

According to the semiconductor resistance element according to the present invention, a wasteful current is not generated in the periphery of the resistance element layer, and a wasteful capacitive load is not applied to the resistance element layer, and a semiconductor substrate and a resistor around the resistance element layer are provided. It is possible to suppress the resistance value from changing due to the influence of the potential difference between the potential of the power supply line, the signal line, and the like passing through the upper part of the element layer and the potential of the resistance element.
For this reason, for example, when configuring an audio semiconductor module that requires low signal distortion, by using the semiconductor resistance element according to the present invention, signal distortion in the entire semiconductor module can be reduced. Can do.

It is a top view which shows the structure of the semiconductor module which has the semiconductor resistance element 10 which concerns on 1st Embodiment of this invention. 1 is a cross-sectional view showing a configuration of a semiconductor module having a semiconductor resistance element 10 according to a first embodiment of the present invention (a cross section taken along line AA of the semiconductor resistance element 10 shown in FIG. 1). 2 is a block diagram showing a configuration of a general inverting buffer circuit 30. It is a top view which shows the structure of the semiconductor module which has the semiconductor resistance element 40 concerning 2nd Embodiment of this invention. It is a structure of the semiconductor module which has the semiconductor resistance element 40 which concerns on 2nd Embodiment of this invention (cross section in AA of the semiconductor resistance element 40 shown in FIG. 4). It is a top view which shows the structure of the semiconductor module which has the semiconductor resistance element 50 which concerns on 3rd Embodiment of this invention. It is a structure of the semiconductor module which has the semiconductor resistance element 50 which concerns on 3rd Embodiment of this invention (cross section in AA of the semiconductor resistance element 50 shown in FIG. 6). It is a structure of the semiconductor module which has the semiconductor resistance element 50 which concerns on 3rd Embodiment of this invention (cross section in the cutting line BB of the semiconductor resistance element 50 shown in FIG. 6). It is a top view which shows the structure of the semiconductor module which has the semiconductor resistance element 60 which concerns on the 1st modification of this invention. FIG. 10 is a cross-sectional view showing a configuration of a semiconductor module having the semiconductor resistance element 60 according to the first embodiment of the present invention (cross section taken along the cutting line AA of the semiconductor resistance element 60 shown in FIG. 9). It is a top view which shows the structure of the semiconductor module which has the semiconductor resistance element 70 which concerns on the 2nd modification of this invention. FIG. 6 is a cross-sectional view showing a configuration of a conventional semiconductor device 100. It is sectional drawing which shows the structure of the conventional semiconductor device 200. FIG.

Hereinafter, embodiments of a semiconductor resistance element and a semiconductor module having the semiconductor resistance element according to the present invention will be described in detail with reference to the accompanying drawings. In the description of the drawings, the same elements are denoted by the same reference numerals, and redundant description is omitted.
(First embodiment)
First, with reference to FIG.1 and FIG.2, the structure and effect | action of the semiconductor module which has the semiconductor resistive element 10 which concerns on 1st Embodiment of this invention are demonstrated. FIG. 1 is a top view showing a configuration of a semiconductor module having a semiconductor resistance element 10 according to the first embodiment of the present invention. FIG. 2 is a cross-sectional view (cross section taken along line AA of the semiconductor resistance element 10 shown in FIG. 1) showing the configuration of the semiconductor module having the semiconductor resistance element 10 according to the first embodiment of the present invention.

(Configuration of Semiconductor Resistance Element 10)
The semiconductor module having the semiconductor resistance element 10 shown in FIGS. 1 and 2 has other semiconductor elements integrated on the same semiconductor substrate. For easy understanding of the configuration of the semiconductor resistance element 10, in each drawing referred to in each embodiment, only the portion of the semiconductor resistance element 10 integrated on the semiconductor substrate is extracted and illustrated. In the top view of each drawing, the interlayer insulating film 15 is omitted.
The semiconductor resistance element 10 includes a first electrode 11, a second electrode 12, a resistance element layer 13, a semiconductor substrate 14, and an interlayer insulating film 15.
In the semiconductor resistance element 10, a resistance element layer 13 is formed on a P-type semiconductor substrate 14 biased to a ground potential via an interlayer insulating film 15.

  The resistance element layer 13 is a polysilicon layer formed using, for example, a polysilicon material. Further, since the semiconductor resistance element 10 is configured so that the resistance value does not change, the resistance value relatively changes due to the potential difference between the potential of the resistance element layer 13 and the potential of the peripheral portion of the resistance element layer 13. The resistive element layer 13 can also be formed by using a material that can be easily processed, or by using the same material as that of a conventional semiconductor resistive element. For example, the resistance element layer 13 may be a diffusion layer in addition to a polysilicon layer.

  The resistance element layer 13 is connected to the first electrode 11 and the second electrode 12 which are a set of conductors for flowing current. The first electrode 11 and the second electrode 12 are formed of a material such as metal, and are aluminum electrodes formed of, for example, aluminum. The first electrode 11 is formed so as to conduct to one end of the resistance element layer 13, and the second electrode 12 is formed so as to conduct to the other end of the resistance element layer 13.

  Of the resistive element layer 13, a region between the position where the first electrode 11 is formed and the position where the second electrode 12 is formed is a resistance region that actually functions as a resistor. Therefore, in the resistance element layer 13, a region from the left end portion of the resistance element layer 13 in FIG. 1 and FIG. 2 to a position where the first electrode 11 is formed, and the resistance element layer 13 in FIG. The region from the right end portion in 2 to the position where the second electrode 12 is formed is a region that does not actually function as a resistor. In the present embodiment, for the sake of explanation, the center position of the first electrode 11 is the position where the first electrode 11 is formed, and the center position of the second electrode 12 is the second electrode 12 formed. The position is.

In the resistive element layer 13, the region 13A and the region 13B are connected in series. The resistance value of the region 13A is R1, and the resistance value of the region 13B is R2. A desired resistance value necessary for the semiconductor resistance element 10, that is, the entire resistance value R of the resistance element layer 13, is the sum of the resistance value R1 of the region 13A and the resistance value R2 of the region 13B. .
The resistance value change coefficient of the region 13A due to the potential difference between the potential of the region 13A and the potential of the semiconductor substrate 14 is K1, and the resistance value change coefficient K1 of the region 13A is a positive or negative value. Further, the resistance value change coefficient of the region 13B due to the potential difference between the potential of the region 13B and the potential of the semiconductor substrate 14 is set to K2, and the resistance value change coefficient K2 of the region 13B has a sign different from that of the resistance value change coefficient K1 of the region 13A. Value.

For example, if the resistance value change coefficient K1 is a positive value, the resistance value change coefficient K2 is a negative value. Therefore, the region 13A becomes a positive electrode region, and the region 13B becomes a negative electrode region. On the contrary, if the resistance value change coefficient K1 is a negative value, the resistance value change coefficient K2 is a positive value. Therefore, the region 13A becomes a negative electrode region, and the region 13B becomes a positive electrode region.
When the resistance element layer 13 is a polysilicon layer formed of polysilicon, a positive electrode region having a positive resistance value change coefficient is formed by implanting or diffusing ions of group 13 ions. Can do. Moreover, the negative electrode area | region whose resistance value change coefficient is a negative value can be formed by implanting or diffusing 15 group ions.

  In addition, when the resistance element layer 13 is a polysilicon layer, a positive electrode region having a positive resistance value change coefficient can be formed by implanting or diffusing boron ions, for example. Moreover, the negative electrode area | region whose resistance value change coefficient is a negative value can be formed by implanting or diffusing phosphorus ions. Thus, the resistive element layer 13 is formed so as to have at least one positive electrode region and at least one negative electrode region by implanting or diffusing impurity ions having different types and concentrations.

An interlayer insulating film 15 is formed around the resistance element layer 13 using a material such as silicon dioxide (SiO ₂ ). The interlayer insulating film 15 electrically insulates and protects semiconductor elements and the like formed on the semiconductor substrate 14 from power supply lines, signal lines, and the like.
The semiconductor substrate 14 around the resistive element layer 13 and the power supply line and signal line passing through the upper part of the resistive element layer 13 become a conductive layer having a single potential and through which electricity flows. Therefore, a polysilicon layer formed by a component different from the polysilicon layer to be the resistance element layer 13 or a formation process, a diffusion layer formed by a component different from the diffusion layer to be the resistance element layer 13 or a formation process, or a metal The metal layers and the like formed by using the conductive layers are all conductive layers.

(Operation of the semiconductor resistance element 10)
Next, when the semiconductor resistance element 10 shown in FIGS. 1 and 2 is integrated as a semiconductor module, a current flows between the electrodes of the first electrode 11 and the second electrode 12 to generate a voltage. At that time, the flow of suppressing the change in the resistance value R of the resistance element layer 13 of the semiconductor resistance element 10 due to the potential difference between the potential of the resistance element layer 13 and the potential of the semiconductor substrate 14 around the resistance element layer 13 and the like. This will be described below.
The function of suppressing the change in the resistance value of the semiconductor resistance element 10 is particularly high when used in a state where the potential of the first electrode 11 is fixed. For this reason, in the description of the present embodiment, the potential of the first electrode 11 is VP1, which is a fixed potential. In addition, the potential of the second electrode 12 is VP2, and the description will be given as an arbitrary potential that can be freely changed.

First, a position where one of the first electrode 11 and the second electrode 12 is formed is set as a reference position o. Here, the position where the first electrode 11 is formed is defined as a reference position o. Further, in the region 13A, the center position between both ends of the resistance region in the region 13A is defined as a center position a. In the region 13B, the center position between both ends of the resistance region in the region 13B is defined as a center position b. An index value with the resistance value between the reference position o and the center position a as an amount is defined as r1. In addition, an index value having a resistance value between the reference position o and the center position b as an amount is set to r2.
Then, the index value r1 can be expressed as the following equation (1). Further, the index value r2 can be expressed as the following equation (2).

Furthermore, the potential difference between the potential at the center position a of the resistance region in the region 13A and the potential of the semiconductor substrate 14 is set to V1. Further, the potential difference between the potential of the central position b of the resistance region in the region 13B and the potential of the semiconductor substrate 14 is set to V2.
Then, the resistance value change component dR1 with respect to the resistance value of the region 13A when the potential of the region 13A and the surrounding potential are the same can be expressed as the following equation (3). Further, the resistance value change component dR2 with respect to the resistance value of the region 13B when the potential of the region 13B and the surrounding potential are the same can be expressed by the following equation (4).

Strictly speaking, in the semiconductor resistance element 10, the index values r1 and r2 and the resistance value change components dR1 and dR2 include resistance values R1 and R2 as variable components. For this reason, when the resistance values R1 and R2 change, the index values r1 and r2 and the resistance value change components dR1 and dR2 also change. However, in a normal semiconductor module, the change amount of the resistance value is about 1/100 or less of the resistance value. Therefore, when considering the index values r1, r2 and the resistance value change components dR1, dR2, the resistance values R1, R2 and the index values r1, r2 can be considered as fixed values. The resistance value change component dR1 can be considered as a variable value that changes only by the potential difference V1, and the resistance value change component dR2 can be considered as a variable value that changes only by the potential difference V2.
Therefore, when the potential of the semiconductor substrate 14 is set to zero, the potential difference V1 can be expressed by the following equation (5). Further, the potential difference V2 can be expressed by the following equation (6).

  Therefore, the resistance value changing component dR1 that changes due to the potential difference V1 between the potential of the region 13A and the potential of the semiconductor substrate 14 can be expressed as the following equation (7). Further, the resistance value changing component dR2 that changes due to the potential difference V2 between the potential of the region 13B and the potential of the semiconductor substrate 14 can be expressed by the following equation (8).

  Here, when the expression shown in the above Expression 7 is expressed using the index value r1, it can be expressed as the following Expression 9. Further, when the equation shown in the above equation 8 is expressed using the index value r2, it can be expressed as the following equation 10.

  The resistance value change component dR of the resistance element layer 13 is a sum of the resistance value change component dR1 and the resistance value change component dR2. Therefore, the resistance value change component dR can be expressed as the following equation (11).

  Here, when the potential VP1 of the first electrode 11 is a fixed potential and the potential VP2 of the second electrode 12 is an arbitrary potential, the resistance value change is always the sum of the resistance value change components dR1 and dR2. In order to make the component dR constant regardless of the potential VP2, R1 · K1 · r1 + R2 · K2 · r2 which is a term related to the potential VP2 of the second electrode 12 in the equation shown in the above equation 11 is set to zero. I understand that That is, the sum of the products of the index values of the regions 13A and 13B, the resistance value, and the resistance value change coefficient may be set to zero.

  Using the resistance value change coefficient K1 of the region 13A and the resistance value change coefficient K2 of the region 13B, the resistance value change component dR of the resistance element layer 13 is constant regardless of the potential VP2 of the second electrode 12. The index value r1 of the area 13A and the index value r2 of the area 13B are determined. Thereby, the resistance value change component dR of the resistance element layer 13 with respect to the potential VP1 of the first electrode 11 and the potential VP2 of the second electrode 12 can be always eliminated.

  As a specific example, when the resistance value R of the resistance element layer 13 is 90 kΩ, the resistance value change coefficient K1 of the region 13A = 0.005, the resistance value change coefficient K2 of the region 13B = −0.004, If the potential VP1 of the electrode 11 = 1V (fixed potential) and the potential VP2 of the second electrode 12 are set to arbitrary potentials, the index value r1 of the region 13A may be 30 kΩ and the index value r2 of the region 13B may be 75 kΩ. Then, the resistance value R1 of the region 13A is 60 kΩ, and the resistance value R2 of the region 13B is 30 kΩ.

  As described above, in the semiconductor resistive element 10, the potential of the resistive element layer 13, the power supply line and the signal line passing through the semiconductor substrate 14 around the resistive element layer 13 and the upper part of the resistive element layer 13 (not shown). It is possible to suppress a change in the resistance value R of the resistance element layer 13 due to the influence of the potential difference with the potential such as. Further, in the semiconductor resistance element 10, in order to suppress the change in the resistance value R of the resistance element layer 13, a wasteful current is not generated and a wasteful capacitive load is not applied to the resistance element layer 13. .

(Configuration of Inversion Buffer Circuit 30 Using Semiconductor Resistance Element 10)
The semiconductor resistance element 10 can be used as one element constituting various semiconductor modules. As a specific example, a semiconductor module functioning as the inverting buffer circuit 30 as shown in FIG. 3 can be configured using the semiconductor resistance elements 34 and 35 having the same configuration as the semiconductor resistance element 10. FIG. 3 is a block diagram showing a configuration of a general inverting buffer circuit 30.

The inverting buffer circuit 30 shown in FIG. 3 is a general buffer circuit integrated as a semiconductor module. The inverting buffer circuit 30 is connected between an analog sensor and an A / D converter, for example, and is used to adjust the amplitude of an input signal at the time of A / D conversion. The inverting buffer circuit 30 includes an input terminal 31, an output terminal 32, an operational amplifier 33, and semiconductor resistance elements 34 and 35.
The input terminal 31 is a terminal for inputting an input signal. The output terminal 32 is a terminal that outputs an output signal processed by the inverting buffer circuit 30.

  The operational amplifier 33 has an inverting input terminal connected to a node between the semiconductor resistance element 34 and the semiconductor resistance element 35, and an output terminal connected to a node between the semiconductor resistance element 35 and the output terminal 32. That is, since the operational amplifier 33 is connected between both terminals of the semiconductor resistance element 35, the inverting buffer circuit 30 can feed back the signal output from the output terminal 32 to the input side. Then, the potential of the signal input to the inverting input terminal of the operational amplifier 33 tends to be the same as the potential of the signal input to the non-inverting input terminal. Therefore, since the potential of the non-inverting input terminal of the operational amplifier 33 is constant, the potential of the signal input to the inverting input terminal is always constant.

The semiconductor resistance elements 34 and 35 have the same configuration as the semiconductor resistance element 10 according to the present embodiment described above, and are connected in series with each other. The semiconductor resistance elements 34 and 35 have their first electrodes connected to the inverting input terminal side of the operational amplifier 33.
The buffer circuit 30 is configured using the resistance elements 34 and 35 described above, and the first electrodes of the resistance elements 34 and 35 are connected to the inverting input terminal side of the operational amplifier 33. As a result, the buffer circuit 30 has a resistance value changing component based on a potential difference between the potential of the resistance element layer constituting the semiconductor resistance elements 34 and 35 and the potential of the semiconductor substrate and the like, which changes according to the potential of the signal input from the input terminal 31. Can be offset to prevent the resistance value of the resistive element layer from changing.

The input / output gain in the inverting buffer circuit 30 is the resistance value of the semiconductor resistance element 35 / the resistance value of the semiconductor resistance element 34. In the conventional semiconductor resistance element described above, the resistance value changes due to a potential difference with the surrounding semiconductor substrate or the like. In particular, since the gain differs greatly between the case where the input signal is high and the case where the input voltage is low, distortion may occur in the output signal. However, the inverting buffer circuit 30 is configured using resistance elements 34 and 35 having the same configuration as that of the semiconductor resistance element 10 according to the present embodiment. Therefore, the resistance values of the resistance elements 34 and 35 do not change due to a potential difference with the surrounding semiconductor substrate or the like. Therefore, the gain does not change and the output signal is not distorted regardless of whether the input signal is a high voltage or a low voltage.
The semiconductor resistance element 10 has been described on the assumption that the potential VP1 of the first electrode 11 is a fixed potential. Of course, the potential VP1 of the first electrode 11 and the potential VP2 of the second electrode 12 are arbitrary. The present invention can also be used when configuring various types of semiconductor modules used at a potential.

(Second Embodiment)
Subsequently, with reference to FIG. 4 and FIG. 5, the configuration and operation of the semiconductor module having the semiconductor resistance element 40 according to the second embodiment of the present invention will be described. FIG. 4 is a top view showing a configuration of a semiconductor module having the semiconductor resistance element 40 according to the second embodiment of the present invention. FIG. 5 is a sectional view showing a configuration of a semiconductor module having the semiconductor resistance element 40 according to the second embodiment of the present invention (cross section taken along line AA of the semiconductor resistance element 40 shown in FIG. 4).

(Configuration of Semiconductor Resistance Element 40)
The semiconductor module having the semiconductor resistance element 40 shown in FIGS. 4 and 5 has the same configuration as the semiconductor module having the semiconductor resistance element 10. Further, the semiconductor resistance element 40 is configured to have the same configuration main part as the semiconductor resistance element 10. However, in the semiconductor resistance element 10, the resistance element layer 13 is divided into two regions 13A and 13B. On the other hand, in the semiconductor resistance element 40, the resistance element layer 41 corresponding to the resistance element layer 13 is divided into three regions 41A to 41C. The resistive element layer 41 is formed in the same manner as the resistive element layer 13 in terms of material, position, etc., and the regions 41 </ b> A to 41 </ b> C are connected in series like the resistive element layer 13. Further, in the resistance element layer 41, a region between the position where the first electrode 11 is formed and the position where the second electrode 12 is formed is a resistance region that actually functions as a resistance. .

Then, using the same variables as described in the above embodiment, the resistance value of the region 41A is R1, the resistance value of the region 41B is R2, and the resistance value of the region 41C is R3. That is, the entire resistance value R of the resistance element layer 41 is the sum of the resistance value R1 of the region 41A, the resistance value R2 of the region 41B, and the resistance value R3 of the region 41C.
The resistance value change coefficient of the region 41A due to the potential difference between the potential of the region 41A and the potential of the semiconductor substrate 14 is represented by K1. The resistance value change coefficient of the region 41B due to the potential difference between the potential of the region 41B and the potential of the semiconductor substrate 14 is represented by K2. The resistance value change coefficient due to the potential difference between the potential of the semiconductor substrate 14C and the potential of the semiconductor substrate 14 is set to the same value as the resistance value change coefficient K1 of the region 41A.

In the semiconductor resistance element 40, the center position between both ends of the resistance region of the resistance element layer 41 is set as a reference position o. When the center positions of the resistance areas of the areas 41A to 41C are a to c, the index values r1 to r3 represent the positional relationship between the center positions a to c of each area and the reference position o, respectively. The resistance value between the center positions a to c of the region is defined as an amount.
Also in the semiconductor resistance element 40, as in the semiconductor resistance element 10, the resistance value change coefficients K1 and K2 of the regions 41A to 41C are determined by implanting or diffusing impurity ions of different types and concentrations, and the regions 41A to 41C. In the positive electrode region or the negative electrode region.

(Operation of the semiconductor resistance element 40)
When the semiconductor resistance element 40 shown in FIGS. 4 and 5 is integrated as a semiconductor integrated circuit, a current flows between the electrodes of the first electrode 11 and the second electrode 12 to generate a voltage. At that time, the flow of suppressing the change in the resistance value R of the resistance element layer 41 of the semiconductor resistance element 40 due to the potential difference between the potential of the resistance element layer 41 and the potential of the semiconductor substrate 14 around the resistance element layer 41 and the like. Is described below.

Note that the function of suppressing the change in the resistance value of the semiconductor resistance element 40 works regardless of the potential VP1 of the first electrode 11 and the potential VP2 of the second electrode 12. For this reason, in the description of this embodiment, it is assumed that both the potential VP1 of the first electrode 11 and the potential VP2 of the second electrode 12 are arbitrary potentials that can be freely changed.
In the semiconductor resistance element 40, the center position between both ends of the resistance region of the resistance element layer 41 is set as a reference position o. In the region 41A, the center position between both ends of the resistance region in the region 41A is defined as a center position a. In the region 41B, since all of the region 41B is a resistance region, the center position between both end portions of the region 41B is set as a center position b. In the region 41C, the center position between both end portions of the resistance region in the region 41C is set as a center position c.

The center positions a to c of the regions 41A to 41C are closer to the first electrode 11 than the reference position o and closer to the second electrode 12 than the reference position o depending on how the regions are formed. Or the same position as the reference position o.
A value using a resistance value between the reference position o and the center position a is set as an index value r1. Further, a value using a resistance value between the reference position o and the center position b is set as an index value r2. Further, a value using a resistance value between the reference position o and the center position c is set as an index value r3. Then, the index value r1 can be expressed as the following equation (12). Further, the index value r2 can be expressed as the following equation (13). Further, the index value r3 can be expressed as the following equation (14).

Further, the potential difference between the potential at the center position a of the region 41A and the potential of the semiconductor substrate 14 is set to V1. Further, the potential difference between the potential at the center position b of the region 41B and the potential of the semiconductor substrate 14 is V2. A potential difference between the potential at the center position c of the region 41C and the potential of the semiconductor substrate 14 is V3.
Then, the resistance value change component dR1 of the region 41A for the case where the potential of the region 41A is the same as the surrounding potential can be expressed by the following equation (15). Further, the resistance value change component dR2 of the region 41B when the potential of the region 41B and the surrounding potential are the same can be expressed as the following equation (16). The resistance value change component dR3 of the region 41C for the case where the potential of the region 41C and the surrounding potential are the same can be expressed as the following equation (17).

Strictly speaking, also in the semiconductor resistance element 40, the index values r1 to r3 and the resistance value change components dR1 to dR3 include resistance values R1 to R3 as variable components. For this reason, when the resistance values R1 to R3 change, the index values r1 to r3 and the resistance value change components dR1 to dR3 also change. However, as described above, in normal semiconductor modules, the resistance values R1 to R3 and the index values r1 to r3 can be considered as fixed values. Further, the resistance value change component dR1 is a variable value that varies only by the potential difference V1, the resistance value change component dR2 is a variable value that varies only by the potential difference V2, and the resistance value change component dR3 is a variable value that varies only by the potential difference V3. be able to.
Assuming that the potential of the semiconductor substrate 14 is zero, the potential difference V1 can be expressed by the following equation (18). Further, the potential difference V2 can be expressed by the following equation (19). Further, the potential difference V3 can be expressed by the following equation (20).

  Therefore, the resistance value change component dR1 that changes due to the potential difference V1 between the potential of the region 41A and the potential of the semiconductor substrate 14 can be expressed as the following equation (21). Further, the resistance value changing component dR2 that changes due to the potential difference V2 between the potential of the region 41B and the potential of the semiconductor substrate 14 can be expressed by the following equation (22). A resistance value change component dR3 that changes due to the potential difference V3 between the potential of the region 41C and the potential of the semiconductor substrate 14 can be expressed as shown in the following equation (23).

  Here, when the index value r1 is used, the above equation 21 can be expressed as the following equation 24. Further, when the index value r2 is used, the above equation 22 can be expressed as the following equation 25. When the index value r3 is used, the above equation 23 can be expressed as the following equation 26.

  The resistance value change component dR of the resistance element layer 41 is a sum of all the resistance value change components dR1 to dR3. Therefore, it can be expressed as the following equation (27). In the semiconductor resistance element 40, the potential VP1 of the first electrode 11 and the potential VP2 of the second electrode 12 are used at arbitrary potentials. For this reason, a term representing a component due to the potentials VP1 and VP2 being arbitrary potentials is added to the equation shown in the following equation (27).

  Here, when the potential VP1 of the first electrode 11 and the potential VP2 of the second electrode 12 are arbitrary potentials, the resistance value change component dR that is always the sum of the resistance value change components dR1 to dR3 is set to the first value. It is made constant regardless of the potential VP1 of the electrode 11 and the potential VP2 of the second electrode 12. For this purpose, the sum of products of the index values, resistance values, and resistance value change coefficients of the regions 41A to 41C becomes zero, and the sum of products of the resistance values and resistance value change coefficients of the regions 41A to 41C becomes zero. It turns out that it is good to become.

  Using the resistance value change coefficient K1 of the region 41A, the resistance value change coefficient K2 of the region 41B, and the resistance value change coefficient K1 of the region 41C, the resistance value change component dR of the resistive element layer 41 is The index value r1 of the region 41A, the index value r2 of the region 41B, and the index value r3 of the region 41C are determined so as to be constant regardless of the potential VP1 and the potential VP2 of the second electrode 12. Thereby, the resistance value change component dR of the resistance element layer 41 with respect to the potential VP1 of the first electrode 11 and the potential VP2 of the second electrode 12 can be always eliminated.

  As a specific example, when the resistance value of the resistance element layer 41 is 90 kΩ, the resistance value change coefficient K1 of the region 41A = 0.005, the resistance value change coefficient K2 of the region 41B = −0.004, the first electrode The potential VP1 of 11 and the potential VP2 of the second electrode 12 may be set to arbitrary potentials. Then, the resistance value R1 of the region 41A is 20 kΩ, the resistance value R2 of the region 41B is 50 kΩ, and the resistance value R3 of the region 41C is 20 kΩ.

As described above, in the semiconductor resistance element 40, both the potential VP1 of the first electrode 11 and the potential VP2 of the second electrode 12 are arbitrary potentials that can be freely changed. However, also in the semiconductor resistance element 40, the potential of the resistance element layer 41 and the potential of the power supply line, the signal line, etc. that pass through the semiconductor substrate 14 around the resistance element layer 41 or the upper part of the resistance element layer 41 (not shown). It is possible to suppress a change in the resistance value R of the resistance element layer 41 due to the influence of the potential difference. Also in this semiconductor resistance element 40, in order to suppress the change in the resistance value R of the resistance element layer 41, a wasteful current is not generated and a wasteful capacitive load is not applied to the resistance element layer 41. .
Of course, the semiconductor resistance element 40 can also be used as the semiconductor resistance elements 34 and 35 constituting the inverting buffer circuit 30 shown in FIG.

(Third embodiment)
Subsequently, with reference to FIGS. 6 to 8, the configuration and operation of the semiconductor module having the semiconductor resistance element 50 according to the third embodiment of the present invention will be described. FIG. 6 is a top view showing a configuration of a semiconductor module having a semiconductor resistance element 50 according to the third embodiment of the present invention. FIG. 7 is a cross-sectional view (cross section taken along the cutting line AA of the semiconductor resistance element 50 shown in FIG. 6) of the semiconductor module having the semiconductor resistance element 50 according to the third embodiment of the present invention. FIG. 8 is a cross-sectional view showing a configuration of a semiconductor module having the semiconductor resistance element 50 according to the third embodiment of the present invention (cross section taken along the cutting line BB of the semiconductor resistance element 50 shown in FIG. 6).

(Configuration of Semiconductor Resistance Element 50)
The semiconductor module having the semiconductor resistance element 50 shown in FIGS. 6 to 8 has the same configuration as the semiconductor module having the semiconductor resistance elements 10 and 40. Further, the semiconductor resistance element 50 is configured to have the same configuration main part as the semiconductor resistance elements 10 and 40. However, in the semiconductor resistance element 10, for example, the region 13A and the region 13B are connected in series between the first electrode 11 and the second electrode 12. On the other hand, in the semiconductor resistance element 50, the region 51A and the region 51B are connected in parallel between the first electrode 31 and the second electrode 32. That is, the resistive element layer 51 is a combined resistance in which the region 51A and the region 51B are connected in parallel. Note that the resistive element layer 51 divided into the region 51A and the region 51B can be considered as a completely separate resistive element layer.
Then, using the same variables as described in the above embodiment, the resistance value of the region 51A is R1, and the resistance value of the region 51B is R2. Then, the resistance value (synthetic resistance value) R of the resistance element layer 51 can be expressed by the following equation (28).

In addition, the resistance value change coefficient of the region 51A is K1, and the resistance value change coefficient K1 of the region 51A is a positive or negative value. Further, the resistance value change coefficient of the region 51B is set to K2, and the sign of the resistance value change coefficient K1 of the region 51A is different.
Also in the semiconductor resistance element 50, as in the semiconductor resistance elements 10 and 40, the resistance value change coefficient K1 of the region 51A and the resistance value change coefficient K2 of the region 51B are changed by changing the type or concentration of impurity ions to be implanted or diffused. Is positive or negative. In this way, the resistance element layer 51 is formed by dividing the region 51A and the region 51B of the resistance element layer 51 into a positive electrode region or a negative electrode region. Alternatively, the resistive element layer 51 is formed by connecting separate resistive element layers of a resistive element layer that functions as a positive electrode region and a resistive element layer that functions as a negative electrode region.

(Operation of the semiconductor resistance element 50)
Next, when the semiconductor resistance element 50 shown in FIGS. 6 to 8 is integrated as a semiconductor integrated circuit, a voltage is generated by a current flowing between the first electrode 31 and the second electrode 32. . At that time, the flow of suppressing the change in the resistance value R of the resistance element layer 51 of the semiconductor resistance element 50 due to the potential difference between the potential of the resistance element layer 51 and the potential of the semiconductor substrate 14 around the resistance element layer 51 and the like. Is described below.

  Note that the function of suppressing the change in the resistance value of the semiconductor resistance element 50 works regardless of the potential VP1 of the first electrode 31 and the potential VP2 of the second electrode 32. For this reason, in the description of the present embodiment, it is assumed that both the potential VP1 of the first electrode 31 and the potential VP2 of the second electrode 32 are arbitrary potentials that can be freely changed.

In the semiconductor resistance element 50, the center position between both ends of the resistance region of the resistance element layers 51A and 51B is set as a reference position o. In the region 51A, the center position between both ends of the resistance region in the region 51A is defined as a center position a. Further, in the region 51B, the center position between both ends of the resistance region in the region 51B is set as a center position b. For this reason, the three positions of the reference position o, the center position a, and the center position b are all the same position. When the potential difference between the potential at the center position a in the region 51A and the potential at the semiconductor substrate 14 is V1, the potential difference between the potential at the center position b in the region 51B and the potential at the semiconductor substrate 14 is also V1.
Then, the resistance value change component dR1 of the region 51A can be expressed as the following equation 29. Further, the resistance value change component dR2 of the region 51B can be expressed by the following equation (30).

  When the potential of the semiconductor substrate 14 is zero, the potential difference V1 can be expressed as the following equation 31.

  Further, the region 51A and the region 51B are connected in parallel. For this reason, the resistance value R of the resistance element layer 51 can be expressed by the following equation (32).

Further, R1 · K1 + R2 · K2 in the denominator of the above equation 32 is set to zero, and K1 · K2 · v1 ² of the numerator is considered as a value smaller than 1 or (K1 + K2) · V1 and ignored. Then, the entire resistance value R of the resistance element layer 51 can be expressed by the following equation 33.

  Temporarily, the resistive element layer 51 is formed only with the material X used to form the region 51A. Then, the resistance value RX of the resistance element layer 51 is expressed by the following equation 34 by the potential difference Vx between the potential of the resistance element layer 51 and the potential of the semiconductor substrate 14 around the resistance element layer 51. be able to.

  Similarly, the resistive element layer 51 is formed using only the material Y used to form the region 51B. Then, the resistance value RY of the resistive element layer 51 is expressed by the following equation 35 by the potential difference VY between the potential of the resistive element layer 51 and the potential of the semiconductor substrate 14 around the resistive element layer 51. be able to.

  Here, each resistance value of the resistance value R of the equation shown in the above equation 33, the resistance value RX of the equation of the above equation 34, and the resistance value RY of the equation shown in the above equation 35 is compared. To do. Then, if the polarity of the resistance value change coefficient K1 in the region 51A is different from the polarity of the resistance value change coefficient K2 in the region 51A, the resistance value change component dR that changes due to the potential difference V1 of the resistance value R of the semiconductor resistance element 50 is It can be seen that a resistance value change component of the resistance element X and a resistance value change component of the resistance element Y are taken. Therefore, the region 51A and the region 51B of the resistance element layer 51 may be formed to be a positive electrode region or a negative electrode region using different materials without using the same material. That is, in the case of the combined resistance of the parallel connection such as the semiconductor resistance element 50, the resistance values of the regions 51A and 51B are not related to the index value that changes depending on the relationship between the reference position o and the center positions a and b. The sum of products with the resistance value change coefficient may be zero.

  In this manner, if the resistance values R1 and R2 and the resistance value change coefficients K1 and K2 are adjusted to form the positive electrode region or the negative electrode region, the resistance value change component dR1 and the resistance value change component dR1 are the same as described in the above embodiment. By canceling out the resistance value change component dR2, the resistance value change component dR of the resistance element layer 51 with respect to the potential VP1 of the first electrode 31 and the potential VP2 of the second electrode 32 can be zero, that is, always eliminated.

  As a specific example, when the resistance value R of the semiconductor resistance element 50 is 12 kΩ, the resistance value change coefficient K1 = 0.002 in the region 51A, the resistance value change coefficient K2 = −0.003 in the region 51B, The potential VP1 of the electrode 11 and the potential VP2 of the second electrode 12 may be set to arbitrary voltages. Then, the resistance value R1 of the region 51A is 30 kΩ, and the resistance value R2 of the region 51B is 20 kΩ.

As described above, in the semiconductor resistance element 50, the potential VP1 of the first electrode 11 and the potential VP2 of the second electrode 12 are arbitrary potentials. However, even in the semiconductor resistance element 50, the potential of the resistance element layer 51, the semiconductor substrate 14 around the resistance element layer 51, and the upper portion of the resistance element layer 51 (not shown) are connected regardless of the connection method of the resistance element layer regions. It is possible to suppress a change in the resistance value R of the resistance element layer 51 due to the influence of the potential difference with the potential of the power supply line, the signal line, or the like that passes therethrough. Also, in this semiconductor resistance element 50, no wasteful current is generated and no unnecessary capacitive load is applied to the resistance element layer 51 in order to suppress a change in the resistance value R of the resistance element layer 51. .
Of course, the semiconductor resistance element 50 can also be used as the semiconductor resistance elements 34 and 35 constituting the inverting buffer circuit 30 shown in FIG.

(First modification)
Finally, with reference to FIG. 9 and FIG. 10, the structure of the semiconductor module having the semiconductor resistance element 60 according to the first modification of the resistance element according to each embodiment of the present invention will be described. FIG. 9 is a top view showing a configuration of a semiconductor module having a semiconductor resistance element 60 according to a first modification of the present invention. FIG. 10 is a cross-sectional view (cross section taken along the line AA of the semiconductor resistance element 60 shown in FIG. 9) showing the configuration of the semiconductor module having the semiconductor resistance element 60 according to the first modification of the present invention.

The semiconductor resistance element 60 shown in FIGS. 9 and 10 is configured to have the same parts as the semiconductor resistance element 10, but further includes an auxiliary electrode 61.
The auxiliary electrode 61 is formed of the same material as the first electrode 11 and the second electrode 12, and electrically connects the region 13A and the region 13B to each other.
In the case where the region 13A and the region 13B are separately formed by implanting impurity ions, a region where the impurity ions are not implanted in either of the regions 13A and the region 13B is formed. There may be a region where ions are implanted and neutralized. If such a region can be increased, a PN junction is formed at the connection portion between the region 13A and the region 13B, and a pure resistance value may not be obtained.

  As described above, when it is difficult to directly connect the region 13A and the region 13B to each other, the regions can be connected to each other via the auxiliary electrode 61. Also, the auxiliary electrode 61 can be used to reinforce the connection between the resistive element layers. For example, the two regions 13 </ b> A and 13 </ b> B of the semiconductor resistance element 10 described above can be connected to each other via the auxiliary electrode 61.

(Second modification)
A configuration of a semiconductor module having a semiconductor resistance element 70 according to a second modification example of the resistance element according to the fourth embodiment of the present invention will be described with reference to FIG. FIG. 11 is a top view showing a configuration of a semiconductor resistance element 70 according to a second modification of the present invention.
A semiconductor resistance element 70 shown in FIG. 11 is configured to have the same parts as the semiconductor resistance element 60, but the resistance element layer 51 is formed as resistance element layers 71 and 72 independent of each other. The region corresponding to the region 51A is the resistive element layer 71, and the region corresponding to the region 51B is the resistive element layer 72.

  The semiconductor resistance elements according to the first to third embodiments are formed so that the resistance element layer has a positive electrode region or a negative electrode region by implanting or diffusing impurity ions of different types and concentrations. However, when a plurality of resistance element layers are connected in parallel like the semiconductor resistance element 70, a plurality of independent resistance element layers can be formed by using completely different materials. Darely, a plurality of independent resistance element layers are formed by using completely different materials and the auxiliary electrode 61 is used to connect the resistance element layers to each other or to reinforce the connection between the resistance element layers. You can also.

(Semiconductor resistance element according to each embodiment)
The semiconductor resistance element according to each embodiment will be described by taking the semiconductor resistance element 10 as an example. The resistance element layer 13 includes a region 13A that has a positive resistance value change coefficient K1 and a resistance value change coefficient K2. Is a negative value and is divided into a region 13B which becomes a negative electrode region. The region 13A and the region 13B are electrically connected. Of the resistance element layer 13, a region between the position where the first electrode 11 is formed and the position where the second electrode 12 is formed is a resistance region that actually functions as a resistance. Become.

  With such a configuration, a resistance value change component caused by a voltage difference between the potential of the positive electrode region of the resistive element layer 13 and the potential of the semiconductor substrate 14 and the like around the resistive element layer 13, and the negative electrode region of the resistive element layer 13 It is possible to cancel out the resistance value change component caused by the voltage difference between the potential and the potential of the semiconductor substrate 14 and the like around the resistance element layer 13. Therefore, it is possible to suppress the resistance value of the resistance element layer from changing.

  When manufacturing a semiconductor module, it can be used as a semiconductor resistance element in which the resistance value is prevented from changing. Specifically, it can be used as various semiconductor modules such as audio equipment that is required to have low distortion.

10, 40, 50, 60, 70... Semiconductor resistance element 11, 71... First electrode 12, 72... Second electrode 13, 41, 51, 61, 71. Substrate 15 …… Interlayer insulating film 61 …… Auxiliary electrode

Claims (11)

Formed on a semiconductor substrate,
A resistive element layer formed around an interlayer insulating film, in parallel with a conductive layer having a single potential around the self layer,
A first electrode formed to conduct to one end of the resistive element layer;
A second electrode formed to conduct to the other end of the resistive element layer;
Have
The resistive element layer is
A potential difference between the potential of the self-layer and the potential of the conductive layer in a resistance region that actually functions as a resistance between the position where the first electrode is formed and the position where the second electrode is formed Each of the positive electrode region in which the resistance value change coefficient of the resistance value change component that changes by the positive value is a positive value and the negative electrode region in which the resistance value change coefficient is a negative value,
An index value that takes a resistance value between a reference position of the resistance region and a center position of the positive electrode region or the negative electrode region, a resistance value of the positive electrode region or the negative electrode region, and a resistance value change coefficient A semiconductor resistance element formed so that a sum of products becomes zero. The resistive element layer is
The positive electrode region and the negative electrode region are connected in series with each other,
The semiconductor resistance element according to claim 1, wherein the first electrode is formed such that a position where the first electrode is formed is the reference position. Formed on a semiconductor substrate,
A resistive element layer formed around an interlayer insulating film, in parallel with a conductive layer having a single potential around the self layer,
A first electrode formed to conduct to one end of the resistive element layer;
A second electrode formed to conduct to the other end of the resistive element layer;
Have
The resistive element layer is
A potential difference between the potential of the self-layer and the potential of the conductive layer in a resistance region that actually functions as a resistance between the position where the first electrode is formed and the position where the second electrode is formed Each of the positive electrode region in which the resistance value change coefficient of the resistance value change component that changes by the positive value is a positive value and the negative electrode region in which the resistance value change coefficient is a negative value,
An index value that takes a resistance value between a reference position of the resistance region and a center position of the positive electrode region or the negative electrode region, a resistance value of the positive electrode region or the negative electrode region, and a resistance value change coefficient The sum of products becomes zero,
In addition, the semiconductor resistance element is formed so that a sum of products of a resistance value of the positive electrode region or the negative electrode region and the resistance value change coefficient becomes zero. The resistive element layer is
The positive electrode region and the negative electrode region are connected in series with each other,
The semiconductor resistance element according to claim 3, wherein a center position between both ends of the resistance region is formed to be the reference position. Formed on a semiconductor substrate,
A resistive element layer formed around an interlayer insulating film, in parallel with a conductive layer having a single potential around the self layer,
A first electrode formed to conduct to one end of the resistive element layer;
A second electrode formed to conduct to the other end of the resistive element layer;
Have
The resistive element layer is
A potential difference between the potential of the self-layer and the potential of the conductive layer in a resistance region that actually functions as a resistance between the position where the first electrode is formed and the position where the second electrode is formed Each of the positive electrode region in which the resistance value change coefficient of the resistance value change component that changes by the positive value is a positive value and the negative electrode region in which the resistance value change coefficient is a negative value,
The positive electrode region and the negative electrode region are connected in parallel to each other,
A semiconductor resistance element, wherein a sum of products of a resistance value of the positive electrode region or the negative electrode region and the resistance value change coefficient is zero. The resistive element layer is
6. The device according to claim 1, wherein at least one of the positive electrode region and the negative electrode region is formed by implanting or diffusing impurity ions having different types and concentrations. The semiconductor resistance element as described. The resistive element layer is
The semiconductor resistance element according to claim 6, which is a polysilicon layer formed using polysilicon as a material. The resistive element layer is
The semiconductor resistance element according to claim 6, wherein the semiconductor resistance element is a diffusion layer. The conductive layer is
9. The semiconductor substrate according to claim 1, wherein the semiconductor substrate, a layer formed in a formation process different from the resistive element layer, or a metal layer formed using a metal. Semiconductor resistance element.   The semiconductor resistance element according to claim 1, further comprising an auxiliary electrode that electrically connects the resistance element layers to each other. While having at least one semiconductor resistance element of any one of Claims 1-10,
A semiconductor module comprising at least one semiconductor element of a type different from the semiconductor resistance element.

Images