JP5669679B2 - Inspection method of semiconductor device - Google Patents

Description

  The present invention relates to a method for inspecting a semiconductor device in which a semiconductor element is flip-chip mounted on a circuit board.

  A semiconductor device in which a semiconductor element is flip-chip mounted on a circuit board and packaged is known. The flip chip mounting method has a merit that a mounting area is small, but there is a problem that it is difficult to determine whether the bonding is direct or not because the bonding portion between the semiconductor element and the circuit board is not visible. Therefore, various methods such as electrical measurement between terminals, observation of heat conduction status, and X-ray fluoroscopy have been proposed. In addition, management of joining quality itself is a general problem regardless of whether it can be visually observed. As a method based on electrical measurement, there is a method for determining the bonding state between the terminal of the semiconductor device and the substrate electrode by measuring the amount of electricity indicating the conduction state between the terminals by changing the temperature of the semiconductor device (for example, Patent Documents). 1).

  FIG. 1 of Patent Document 1 is shown in FIG. FIG. 9 is a perspective view showing the wiring relationship of the inspection system for determining the junction state from the temperature of the semiconductor device and the current characteristics of the parasitic diode. As shown in the figure, the heater probe 36 contacts the package part 30 of the SOP type package IC, and heats the package part 30. Current flowing through a parasitic diode (shown as 58a in FIG. 2 of Patent Document 1) between the pin 32a and the ground pin 32g before and after heating is measured by the measurement probes 38a and 38g. This inspection system determines the bonding state between the patterns 34a and 34g (board electrodes) on the component mounting board and the pins 32a and 32g (terminals) from the difference in current value before and after heating.

  Among semiconductor devices, a semiconductor light emitting device (hereinafter referred to as an LED device unless otherwise specified) in which a light emitting diode element (hereinafter referred to as an LED element unless otherwise specified) is flip-chip mounted on a circuit board and packaged is accompanied by light emission. It generates heat. Thus, a large current may be passed in the forward direction to heat the PN junction, and the quality of the LED device may be determined based on the difference ΔVf in the forward voltage Vf before and after heating. From this inspection, defects in various modes are detected, and this may include defective bonding between the electrodes on the circuit board and the electrodes of the LED elements.

Japanese Patent Laid-Open No. 10-19958 (FIGS. 1 and 2)

  In the method of Patent Document 1, the package part 30 is sufficiently heated by the heater probe 36, and the current flowing through the parasitic diode 58a is measured in a state where the temperature of each of the pins 32a and 32g is increased. In this method, since the semiconductor device is heated through the resin used in the package part 30, it is difficult to control the temperature of each part, and it cannot be said that the detection accuracy of the bonding failure is high. For this reason, it is not suitable for determining the fine bonding state of the semiconductor element mounted on the flip chip.

The method using the heat generated by the semiconductor element itself, such as the inspection method applied to the LED device described above, is simple because it does not require a heating device. It is not suitable for determining the fine bonding state of a semiconductor element mounted on a chip. In the case of an LED element, the size of the anode electrode is larger than that of the cathode electrode.
The main path through which the heat generated in the N junction is conducted is on the anode electrode side. For this reason, the measured value of the amount of electricity related to bonding largely reflects the bonding state of the anode electrode. On the other hand, since a bonding failure is likely to occur on the cathode electrode side having a small connection area, the method of heating the LED element by energization is not appropriate for detecting a defect.

  Accordingly, the present invention has been made in view of the above problems, and in a semiconductor device in which a semiconductor element is flip-chip mounted on a circuit board, an inspection that can accurately determine a connection failure between the electrode of the semiconductor element and the electrode of the circuit board. It aims to provide a method.

In order to achieve the above object, a semiconductor device inspection method of the present invention is a semiconductor device inspection method in which a semiconductor element is flip-chip mounted on a circuit board.
The semiconductor element is an LED element,
One electrode of the LED element has a smaller connection area than the other electrode,
The electrodes of the circuit board to be connected to the one electrode is heated through the probe by the heat obtained from the heater to raise the temperature of the one electrode,
Said circuit board electrode connected to the one electrode, an electrical quantity indicative of the conductive state between the circuit board of the electrodes connected to the other electrode, the change immediately after the heating through the probe Observe
The pass / fail judgment criteria prepared in advance and the result of the observation are compared to judge pass / fail.

The amount of electricity may be a forward voltage of the LED element .

You may observe the temperature rise of the said LED element with the said electric quantity .

When the LED element is flip-chip mounted on a collective substrate to which a large number of the circuit boards are connected and connected, and the electrodes of the circuit board connected to the one electrode are connected to each other by a common wiring, the common wiring is You may heat up collectively .

The semiconductor element inspection method of the present invention heats only one electrode of a circuit board to improve the accuracy and efficiency of the quality determination of interelectrode connection. That is, if the heat conduction path including one electrode of the circuit board is heated and the state change of the semiconductor element is observed, the connection failure included in the heat conduction path is strongly reflected in the observation result. As described above, the semiconductor device inspection method of the present invention can accurately determine a connection failure between the electrode of the semiconductor element and the electrode of the circuit board in the semiconductor device in which the semiconductor element is flip-chip mounted on the circuit board.

Sectional drawing of the LED apparatus test | inspected by 1st Embodiment of this invention. The top view of the electrode surface in the LED element of FIG. Explanatory drawing for test | inspecting the LED apparatus of FIG. The graph which shows the change of the forward voltage measured with the test | inspection system of FIG. The perspective view of the test | inspection system in 2nd Embodiment of this invention. FIG. 6 is an explanatory diagram of a collective substrate included in the inspection system of FIG. 5. Explanatory drawing of the test | inspection system in 3rd Embodiment of this invention. Explanatory drawing of the test | inspection system in 4th Embodiment of this invention. The perspective view which shows the wiring relationship of the test | inspection system with respect to the conventional semiconductor device.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to FIGS. In the drawings, the same or corresponding elements are denoted by the same reference numerals, and redundant description is omitted. For the sake of explanation, the scale of the members is changed as appropriate. Furthermore, the relationship with the invention specific matter described in the claims is described in parentheses.
(First embodiment)

  A first embodiment of the present invention will be described with reference to FIGS. FIG. 1 is a cross-sectional view of an LED device 10 (semiconductor device) inspected by the inspection method of this embodiment. In the following description, the LED element 20 and the LED device 10 are used as a semiconductor element and a semiconductor device to be inspected. In the LED device 10, an LED element 20 is flip-chip mounted on a circuit board 19. In the circuit board 19, the + electrode 16 has a metal pattern on the upper and lower surfaces of the plate member 18, and the metal pattern is connected through the through hole 16 a. Similarly, the upper and lower metal patterns of the negative electrode 17 are connected through a through hole 17a. The LED element 20 includes a semiconductor layer 13 on the lower surface of a sapphire substrate 12 (transparent substrate). The semiconductor layer 13 is a blue light emitting diode, and an N-side bump 14 (an electrode of a semiconductor element) and a P-side bump 15 (an electrode of a semiconductor element) are attached. The N-side and P-side bumps 14 and 15 correspond to the cathode and the anode, respectively, and are connected to the − and + electrodes 17 and 16 by metal eutectic bonding. The upper surface of the circuit board 19 and the LED element 20 are sealed with a fluorescent resin 11 containing a phosphor.

  The plate member 18 has a thickness of several hundreds μm, and is selected from resin, ceramic, and metal in consideration of thermal conductivity. The + and − electrodes 16 and 17 are formed by laminating a nickel layer and a gold layer on a copper foil of about 20 μm, for example. When the plate member 18 is made of resin, the through holes 16a and 17a are preferably filled with a metal paste to improve thermal conductivity. The sapphire substrate 12 has a thickness of 80 to 120 μm. The semiconductor layer 13 has a thickness of about 7 μm, and the N-side and P-side bumps 14 and 15 have a thickness of about 10 to 30 μm if formed by electrolytic gold plating. The fluorescent resin 11 has a silicone resin as a main component and a thickness of several hundreds of micrometers.

The electrode surface of the LED element 20 will be described with reference to FIG. FIG. 2 is a plan view of the LED element 20 as viewed from the electrode surface side. A part of the N-type semiconductor layer 21 is exposed from the P-type semiconductor layer 22 in the upper layer. The semiconductor layer 13 includes an N-type semiconductor layer 21 and a P-type semiconductor layer 22. The N-side bump 14 is connected to the N-type semiconductor layer 21, and the P-side bump 15 is connected to the P-type semiconductor layer 22. The light emitting layer (not shown) is at the boundary between the N-type semiconductor layer 21 and the P-type semiconductor layer 22 and is substantially equal to the P-type semiconductor layer 22 in plan view. Since the light emitting layer occupying a large area is a heat source, the planar size of the P-side bump 15 is larger than that of the N-side bump 14 in consideration of heat dissipation. The cross section shown in FIG. 1 is drawn so as to include the AA line.

  1 and 2, the connection area between the negative electrode 17 and the N-side bump 14 is smaller than the connection area between the positive electrode 16 and the P-side bump 15. Therefore, in the present embodiment, the electrode having the smaller connection area is the N-side bump 14. The heating path includes the negative electrode 17 (one electrode of the circuit board) and the N-side bump 14 in the circuit board 19 and the LED element 20.

  FIG. 3 is an explanatory diagram showing a system for inspecting the LED device 10 of FIG. A + side probe 23 and a − side probe 24 are in contact with the + electrode 16 and the − electrode 17 of the LED device 10, respectively. Further, a heater 25 for heating the negative electrode 17 is in contact with the negative probe 24. The application unit 31 includes a power source 29 and a constant current source 27, and applies a current from the + side probe 23 to the − side probe 24. A voltmeter 26 is connected between the + side probe 23 and the − side probe 24. Control determining means 33 for controlling the constant current source 27 and the voltmeter 26 and for taking in data from the voltmeter 26 is also provided. The constant current source is often illustrated as including a constant current circuit and a power source, but in FIG. 3, the constant current source 27 and the power source 29 corresponding to the constant current circuit are illustrated separately.

  In this measurement system, the applying means 31 applies a constant current to the path from the + electrode 16 to the − electrode 17 through the semiconductor layer 13 of the LED element 20, and the voltage between the + electrode 16 and the − electrode 17 is measured by the voltmeter 26. Measure. This measured voltage value indicates the forward voltage Vf of the LED element 20. First, a voltage that is an initial value at room temperature is measured, and then the negative electrode 17 is heated by the heater 25 and the voltage is measured again. Based on this voltage data, the control determination means 33 determines the junction state of the path from the negative electrode 17 to the semiconductor layer 13.

  The inspection flow will be described in more detail with reference to FIG. FIG. 4 is a graph showing the temperature T of the PN junction that rises due to heating, the data measurement timing, and the change in the forward voltage Vf (amount of electricity). The + side probe 23 and the − side probe 24 are brought into contact with the + electrode 16 and the − electrode 17 of the LED element 20. At the same time, the control determination unit 33 causes the constant current source 27 to output a predetermined current. Subsequently, the control determination unit 33 causes the voltmeter 26 to measure the voltage between the + side probe 23 and the − side probe 24. This voltage becomes the initial value of the forward voltage, and the control determination means 33 stores this value.

  Next, the heater 25 is brought into contact with the minus probe 24 to raise the temperature of the minus probe 24. Since the temperature of the − side probe 24 having a relatively large heat capacity cannot be instantaneously increased, the − side probe 24 is once separated from the − electrode 17, the temperature is increased by the heater 25, and then the − electrode 17 is again provided. Make contact.

  Even after recontact, a constant current continues to be applied between the + side probe 23 and the − side probe 24, and the voltmeter 26 measures the forward voltage Vf at the measurement timing indicated by the pulse in the figure. Since voltage measurement is performed a plurality of times at high speed, the measured value is temporarily stored in the memory of the voltmeter 26. The control determination means 33 stops the current application of the constant current source 27 and the voltage measurement of the voltmeter 26 when a predetermined time elapses, and takes in and stores the measurement value of the voltmeter 26. Finally, the control determination unit 33 determines whether or not the connection is good based on the stored tendency of measured values (forward voltage Vf) before and after heating.

The temperature T of the PN junction of the semiconductor layer 13 starts to rise as soon as the heated negative probe 24 contacts the negative electrode 17. At this time, if the connection is good in the path from the electrode 17 to the semiconductor layer 13 via the N-side bump 14, the temperature rises rapidly. On the other hand, in the case of a defective product having a defective connection, the temperature rise may be delayed. However, if the connection failure is minor, it may reach the same temperature as a good product when it reaches thermal equilibrium. Although it depends on the structure of the LED device 10, thermal equilibrium is achieved within a few ms.

  When the temperature T of the PN junction changes, the forward voltage Vf also changes. At this time, when the temperature T increases, the forward voltage Vf decreases. The forward voltage Vf is sampled a plurality of times at intervals of about 100 to 200 μs. In the figure, the measurement points are indicated by black dots. As with the temperature T, the rate of decrease in the forward voltage Vf of the defective product is slower than that of the good product. The reason why the forward voltage Vf is measured at a plurality of timings is to estimate the timing at which the negative probe 24 contacts the negative electrode 17 together with the improvement in accuracy. That is, since the contact of the negative probe 24 is mechanically performed, it is difficult to know the contact timing with high accuracy, and it is required to complete the measurement within several ms.

  As described above, in the present embodiment, the main part of the measurement is completed in the period (transient state) in which the temperature T rises so that a slight connection failure can be determined. A constant current continues to flow from the constant current source 27 before and after voltage measurement, but is set to a small value (for example, several hundred μA) so as not to have a large effect on the PN junction temperature T. In addition, it may be better to use the difference ΔVf between the measured value and the initial value than the absolute value of the forward voltage for the pass / fail judgment. -Since the path from the electrode 17 to the semiconductor layer 13 has high thermal resistance, it is easy to accurately determine the connection state by transient measurement.

  In this embodiment, the forward voltage Vf of the diode is selected as the amount of electricity correlated with the connection state. The forward voltage Vf is convenient because it changes significantly with temperature. However, the amount of electricity correlated with the connection state is not limited to the forward voltage, and may be, for example, a resistance value. In addition, the measurement of the amount of electricity after heating may be performed once, but the measurement accuracy and the accuracy related to the quality determination can be improved by measuring a plurality of times as described above. If the heat flow through the semiconductor element is large, it is possible to judge whether the connection state is good or not even by measuring the amount of electricity after thermal equilibrium. preferable.

In this embodiment, after measuring the initial value of the forward voltage Vf, the measurement probe 24 is once separated from the LED device 10, the measurement probe 24 is heated, and then brought into contact with the LED device 10 again to check the change state of the forward voltage Vf. I was observing. This method is characterized in that an accurate initial value can be obtained, but there is a problem that it takes time to control the temperature of the measurement probe 24. Therefore, during mass production, the measurement probe 24 is always heated, the forward voltage first obtained when the measurement probe 24 comes into contact is regarded as the initial value at room temperature, and the change in the forward voltage Vf accompanying the subsequent temperature rise is observed. You may do it. In this method, since the measurement probe 24 is constantly at a high temperature, the inspection time taken per LED element can be shortened.
(Second Embodiment)

  In the inspection system of the first embodiment, the connection failure is determined based on the abnormality of the forward voltage Vf. As described above, if there is a connection failure, the temperature rise slows down. In addition, the tendency becomes large, so that a connection area is small, and also a connection defect is easy to occur. That is, in order to determine a connection failure, it is preferable to heat the electrode with the smaller connection area and directly measure the transient temperature rise.

Further, in the inspection system of the first embodiment shown in FIG. 3, one LED device 10 is an inspection target. The LED device 10 can be manufactured by arranging the LED elements 20 on a collective substrate in which circuit boards 19 are connected and arranged, molding the fluorescent resin 11 on the collective substrate, and then cutting the collective substrate into pieces. Many. In order to check the connection state during the manufacturing, the negative electrode 17 of each LED device 10 (before cutting) may be heated in the aggregate substrate state to measure the forward voltage Vf and observe the temperature rise pattern. At this time, in the collective substrate, when the electrodes 17 included in the adjacent circuit boards 19 have common wiring, the electrodes 17 connected to the N-side bumps 14 of the LED elements 20
Heating to can be simplified.

  Therefore, according to the second and third embodiments, a plurality of LED elements 20 are mounted on a collective substrate, and one electrode of the LED elements 20 is connected by a common wiring on the collective substrate, and each LED element 20 is connected through the common wiring. An inspection method for heating one of the electrodes and observing the temperature rise of the LED element 20 to determine whether or not the connection is good will be described.

  First, a second embodiment of the present invention will be described with reference to FIGS. FIG. 5 is a perspective view of an inspection system according to the second embodiment of the present invention. In FIG. 5, the LED elements 20 are arranged in a matrix on the collective substrate 61. Here, the fluorescent resin 11 is not molded on the LED element 20. An infrared camera 51 is disposed on the collective substrate 61. On the left side of the collective substrate 61, the tip of the heater probe 62 is in contact.

  The infrared camera 51 measures the temperature of the LED element 20 from the infrared intensity emitted by the LED element 20. This infrared camera 51 is available with a time resolution of about 25 μs. The heater probe 62 heats the common wiring (not shown), and heats the N-side bump 14 (see FIG. 1 and the like) of the LED element 20 using the common wiring as a heat conduction path. In this inspection system, the temperature increase of the plurality of LED elements 20 is observed simultaneously with the infrared camera 51 immediately after the heating of the common wiring by the heater probe 62. As the plate material of the collective substrate 61, a material having a larger thermal resistance than a common wiring such as resin is easy to inspect.

  The inspection system will be described more specifically with reference to FIG. FIG. 6 is an explanatory diagram of the collective substrate 61 included in the inspection system of FIG. (A) has shown the heating location of the heater probe 62 with the top view of the aggregate substrate 61. FIG. The LED elements 20 are arranged in a matrix on the collective substrate 61, and the N-side bumps 14 (not shown) of the LED elements 20 arranged in a horizontal row are connected by the common wiring 63 via the negative electrode 17 (not shown). Connected. The heater probe 62 heats one end of the common wiring 63. The common wiring 63 is obtained by cutting the left and right ends of the common electrode for plating for electrolytic plating of the-and + electrodes 17 and 16 before inspection. Although not shown, it is preferable to provide a contact area of the heater probe 62 on the left side of the common wiring 63 and a monitor area for temperature measurement on the right side. In this way, it becomes possible to correct the variation in the thermal resistance of the common wiring 63, and the quality determination becomes more accurate.

FIG. 6B shows the heater probe 62 and the infrared camera 51 together with the front view of the collective substrate 61. In FIG. 6, it is assumed that the common wiring 63 is on the upper surface, but the common wiring may be on the lower surface of the collective substrate 61. In this case, the heater probe 62 contacts from the lower surface of the collective substrate 61.
(Third embodiment)

  In the second embodiment, the common wiring 63 is heated by the heater probe 62. The heating method is not limited to the heater probe 62 and may be energized, for example. Accordingly, a third embodiment that employs a heating method utilizing energization will be described with reference to FIG. FIG. 7 is an explanatory diagram of an inspection system according to the third embodiment of the present invention. (A) shows a current application terminal 64 and a power source 65 for energization together with a plan view of the collective substrate 61. The main difference from the inspection system of the second embodiment shown in FIG. 6 is that the current application terminals 64 are in contact with both ends of the common wiring 63. A current is supplied from the power supply 65 to the current application terminal 64. (B) shows the current application terminal 64, the power source 65, and the infrared camera 51 together with a front view of the collective substrate 61. In FIG. 7, it is assumed that the common wiring 63 is on the upper surface, but the common wiring may be on the lower surface of the collective substrate 61.

In the case of the collective substrate 61 of about 10 cm square, the common wiring 63 is set to about several mΩ. Current can be applied in a steep pulse shape, and the common wiring 63 can be uniformly heated in a short time, so that even a plate material having a low thermal resistance such as ceramic or metal can be inspected. Further, the resistance value of the common wiring 63 may be measured in advance to adjust the current value.
(Fourth embodiment)

  In the first embodiment, connection failure is determined by heating one electrode and observing a transient change in the forward voltage Vf. In the second and third embodiments, connection failure is determined by heating one electrode and observing a transient change in the temperature of the LED element 20. If one electrode is heated and a transient change in forward voltage Vf and temperature is measured at the same time, a judgment regarding connection failure can be made accurately. Therefore, a fourth embodiment of the present invention for simultaneously measuring the forward voltage Vf and the transient change in temperature will be described with reference to FIG.

  FIG. 8 is an explanatory diagram showing a system for observing a temperature rise as well as measuring the forward voltage Vf of the LED device 10 shown in FIG. 1 and inspecting the connection state of the LED device 10. FIG. 8 is obtained by adding an infrared camera 51 to the inspection system shown in FIG. The infrared camera 51 is disposed above the LED device 10 and measures the temperature distribution on the upper surface of the LED device 10 from the infrared intensity emitted by the LED device 10. An infrared camera 51 with a time resolution of about 25 μs is available. The infrared camera 51 exchanges control signals and data with the control determination means 52. Other functions of the control determination unit 52 are the same as those of the control determination unit 33 in FIG. That is, the control determination unit 52 stores the temperature rise pattern of the LED device 10 sent from the infrared camera 51 together with the forward voltage Vf measured by the same procedure as that of the first embodiment, and stores the stored pattern data in advance. The change pattern of the forward voltage VF stored as a non-defective product and the temperature rise pattern are compared to determine whether or not the product is good.

  In the present embodiment, since the LED element 20 emits light, the presence of infrared light due to light emission and the molding with the fluorescent resin 11 cause an increase in noise and a decrease in spatial resolution in infrared measurement. . However, when the single LED device 10 is inspected, the spatial resolution of the infrared camera 51 can be increased, so that the accuracy of determination of connection failure can be maintained by checking the heat generation pattern (temperature distribution) in detail.

  In the first to fourth embodiments, the protruding electrode is provided on the semiconductor element side. A protruding electrode may be provided on the circuit board side, and a semiconductor element may be flip-chip mounted on the protruding electrode. However, it is preferable to provide protruding electrodes on the semiconductor element side because the protruding electrodes can be formed in a wafer state where the elements are densely packed, so that the production efficiency is increased.

  In the first to fourth embodiments, the area of the connection portion between the element side electrode and the circuit board included in the heating path is smaller than the area of the connection portion between the element side electrode and the circuit board in the non-heating path. Even if the area of the connection part in the heating path is equal to or larger than the area of the connection part in the non-heating path, only one path is heated, and the forward voltage Vf after heating is measured, and the temperature rise is observed. It is possible to determine whether or not the connection is good. If the area of the connection part of one path is different from the area of the connection part of the other path, different results can be obtained by heating each path separately, making it easy to analyze the cause of failure. . In many cases, as described above, connection failures are concentrated on the connection portion with the smaller connection area. Therefore, if only the path with the smaller connection area is heated and inspected, the inspection process can be shortened with a high defect detection rate. can do. The characteristic that the bump size (electrode on the element side) is different is typical of LED elements among semiconductor elements.

In the first to fourth embodiments, the LED element has been described as the semiconductor element. However, since the semiconductor element often includes a parasitic diode and a parasitic resistance between the electrodes, the inspection method of the present invention is a semiconductor element other than the LED element. The present invention can also be applied to a semiconductor device mounted with. In particular, a semiconductor element exhibiting diode characteristics between terminals is preferable because the forward voltage Vf can be measured. The method for heating the first electrode is not limited to heating via a probe for measurement or a contact heater probe, and a non-contact heater probe that emits laser, light, infrared light, or the like may be used. In this case, the electrode having the smaller connection area may be directly heated.

10 LED device (semiconductor device),
11 ... fluorescent resin,
12 ... sapphire substrate,
13 ... semiconductor layer,
14 ... N side bump,
15 ... P side bump,
16 ... + electrodes,
16a, 17a ... through hole,
17 ...- electrodes,
18 ... board material,
19 ... circuit board,
20 ... LED element,
21 ... N-type semiconductor layer,
22 ... P-side semiconductor layer,
23 ... + side probe,
24 ...- side probe,
25 ... Heater,
26 ... Voltmeter 27 ... Constant current source,
29, 65 ... power supply,
31 ... Application means,
33, 52 ... control determination means,
51 ... Infrared camera,
61 ... Collective board,
62 ... heater probe,
63 ... Common wiring,
64: Current application terminal.

Claims (4)

In a semiconductor device inspection method in which a semiconductor element is flip-chip mounted on a circuit board,
The semiconductor element is an LED element,
One electrode of the LED element has a smaller connection area than the other electrode,
The electrodes of the circuit board to be connected to the one electrode is heated through the probe by the heat obtained from the heater to raise the temperature of the one electrode,
Said circuit board electrode connected to the one electrode, an electrical quantity indicative of the conductive state between the circuit board of the electrodes connected to the other electrode, the change immediately after the heating through the probe Observe
A method for inspecting a semiconductor device, comprising: comparing a quality determination criterion prepared in advance with a result of the observation to determine quality. The method for inspecting a semiconductor device according to claim 1 , wherein the quantity of electricity is a forward voltage of the LED element . Method of inspecting a semiconductor device according to claim 1 or 2, characterized in that for observing the temperature rise of the LED element with the quantity of electricity. When the LED element is flip-chip mounted on a collective substrate to which a large number of the circuit boards are connected and connected, and the electrodes of the circuit board connected to the one electrode are connected to each other by a common wiring, the common wiring is method of inspecting a semiconductor device according to any one of claims 1 to 3, characterized in that heating collectively.

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