JP5716371B2 - Film for semiconductor and method for manufacturing semiconductor device - Google Patents

Description

  The present invention relates to a semiconductor film and a method for manufacturing a semiconductor device.

  In response to the recent increase in functionality of electronic devices and expansion to mobile applications, there is an increasing demand for higher density and higher integration of semiconductor devices, and IC packages are increasing in capacity and density.

  In these semiconductor device manufacturing methods, first, an adhesive sheet (semiconductor film) is attached to a semiconductor wafer made of silicon, gallium, arsenic, etc., and the semiconductor is formed in a dicing process while fixing the periphery of the semiconductor wafer with a wafer ring. The wafer is cut and separated (separated) into individual semiconductor elements. Next, an expanding process for separating the individual semiconductor elements separated from each other and a pickup process for picking up the separated semiconductor elements are performed. Thereafter, the picked-up semiconductor element is transferred to a die bonding process for mounting on a metal lead frame or a substrate (for example, a tape substrate, an organic hard substrate, etc.). Thereby, a semiconductor device is obtained.

  In the die bonding process, the picked-up semiconductor element is stacked on another semiconductor element, whereby a chip stack type semiconductor device in which a plurality of semiconductor elements are mounted in one package can be obtained.

  As an adhesive sheet used in such a method for manufacturing a semiconductor device, a first adhesive layer and a second adhesive layer are laminated in this order on a base film (support film). Is known (see, for example, Patent Document 1).

  This adhesive sheet is subjected to the dicing process described above in a state of being attached to a semiconductor wafer. In the dicing step, the semiconductor wafer and the two adhesive layers are separated into a plurality of parts by providing a cut so that the tip of the dicing blade reaches the base film. In the pickup process, peeling occurs at the interface between the base film and the two adhesive layers, and the separated semiconductor element is picked up together with the separated two adhesive layers. Is done. The two adhesive layers picked up are responsible for adhesion between the separated semiconductor element and the metal lead frame (or substrate) in the die bonding step.

  In the pickup process, generally, the back surface of the base film (in the adhesive sheet of Patent Document 1, the surface on the side opposite to the adhesive layer of the base film) is adsorbed and fixed and separated into pieces. The semiconductor element is pushed up with a needle (push-up pin) from the back side of the base film.

  By the way, in the pick-up process, when picking up the separated semiconductor element, without causing damage such as cracking or chipping in the semiconductor element (in the adhesive sheet of Patent Document 1, It is required to have excellent properties (so-called pickup properties) that cause easy and reliable peeling at the interface between the base film and the two adhesive layers).

  However, in the past, there has been a problem that the pickup property is not improved sufficiently by pushing up the semiconductor element with a needle through the base film, and the pickup property is not sufficient.

  Conventionally, in order to improve the pick-up property, if the adhesion force of the interface that should cause peeling is weakened, the separated semiconductor element is peeled off unintentionally by the rotational force of the dicing blade in the dicing process. There has been a problem that a phenomenon (so-called chip jump) occurs.

  Thus, conventionally, there has been a problem that it is difficult to achieve both improvement in pick-up property and prevention of chip skipping.

JP 2004-43761 A

  An object of the present invention is to provide a semiconductor film and a semiconductor device manufacturing method capable of preventing chip skipping during dicing and improving pickup properties.

Such an object is achieved by the present inventions (1) to (9) below.
(1) An adhesive layer, an adhesive layer, and a support film are laminated in this order, and a semiconductor wafer is attached to a surface of the adhesive layer opposite to the support film, and in this state, the semiconductor wafer and the cutting the adhesive layer into individual pieces, by deforming the support film and the adhesive layer while the push-up by a plurality of push-up pins resulting pieces through the support film and the adhesive layer, the support film and A semiconductor film used when picking up from the adhesive layer ,
The pressure-sensitive adhesive layer has an average thickness thinner than the average thickness of the support film, and a first pressure-sensitive adhesive layer in contact with the adhesive layer and a surface of the first pressure-sensitive adhesive layer opposite to the adhesive layer. A second adhesive layer having a higher adhesiveness than the first adhesive layer,
The average thickness of the support film is 100 μm or less, and
The support film has a rigidity at 23 ° C. of 40 N or more and 1,000 N or less,
The support fill arm is pushed up marks were partially plastic deformation around the contact points between the respective thrust pins by push-up of the thrust pins are respectively formed,
The first adhesive layer and the second adhesive layer are deformed following plastic deformation of the support film, and the deformed portion is in contact with the adhesive layer .

(2) The film for a semiconductor according to (1) , wherein an adhesion force of the first adhesive layer to the adhesive layer is smaller than an adhesion force of the adhesive layer to the semiconductor wafer .

(3) The semiconductor according to (1) or (2), wherein the adhesion of the second adhesion layer to the first adhesion layer and the support film is greater than the adhesion of the first adhesion layer to the adhesion layer. use film.

(4) The film for a semiconductor according to any one of (1) to (3), wherein the support film has a flexural rigidity at 23 ° C. of 0.25 N · mm ² or less .

(5) The film for a semiconductor according to any one of (1) to (4), wherein the support film has a tensile elastic modulus at 23 ° C. of 50 to 3,000 MPa.

(6) When the area in plan view of one piece is A, and the area in plan view of the push-up mark formed in the region corresponding to the piece of the support film is B, Film for semiconductors in any one of said (1) thru | or (5) whose / A is 1 to 15% .

  (7) The film for semiconductor according to any one of (1) to (6), wherein the glass transition temperature of the support film is −25 ° C. or higher and 120 ° C. or lower.

(8) The process of sticking the surface by the side of the above-mentioned adhesion layer of the film for semiconductors in any of (1) thru / or (7) to a semiconductor wafer, and obtaining a layered product,
Cutting the semiconductor wafer into pieces by forming a cut in the laminate from the semiconductor wafer side; and
And a step of picking up the obtained piece through the support film by a plurality of push-up pins and picking up the piece from the support film.

  (9) The method for manufacturing a semiconductor device according to (8), wherein a surface opposite to the adhesive layer of the support film is sucked and fixed during the pickup.

  According to the present invention, since the rigidity and thickness of the support film are optimized, when the individual piece is pushed up by the push-up pin (needle) through the support film at the time of pickup, the thickness of the support film is increased. Can be locally increased. Therefore, by pushing up the support film with a push-up pin, a gap is likely to be generated at the interface to be peeled off of the semiconductor film, and pickup properties can be improved. Thereby, even if the tackiness of the adhesive layer or the like is increased, the pickup can be performed satisfactorily. In addition, since the adhesiveness of the adhesive layer or the like can be increased, so-called chip jumping can be prevented during dicing, and the dicing property can be improved.

  In addition, according to the present invention, since the elasticity of the support film is relatively low, vibrations caused by dicing can be absorbed by the support film during dicing. As a result, damage to the semiconductor wafer during dicing can be prevented.

It is a figure (longitudinal sectional view) for demonstrating the manufacturing method (mainly dicing process) of the film for semiconductors which concerns on 1st Embodiment of this invention, and a semiconductor device. It is a figure for demonstrating the method to manufacture the film for semiconductors shown in FIG. It is a figure (longitudinal sectional view) for demonstrating the manufacturing method (mainly pick-up process) of the film for semiconductors which concerns on 1st Embodiment of this invention, and a semiconductor device. It is a top view for demonstrating the pick-up process shown in FIG. It is the sectional view on the AA line in FIG. (A) is a figure for demonstrating the pick-up process based on this invention, (b) is a figure for demonstrating the conventional pick-up process. (A) is a top view which shows the support film after the pick-up process shown to Fig.6 (a), (b) is a top view which shows the support film after the pick-up process shown in FIG.6 (b). It is a figure (longitudinal sectional drawing) for demonstrating the manufacturing method (mainly molding process) of the film for semiconductors and semiconductor device which concern on 1st Embodiment of this invention. It is a figure (longitudinal sectional view) for demonstrating the manufacturing method (mainly dicing process) of the film for semiconductors which concerns on 2nd Embodiment of this invention, and a semiconductor device. (A) is the photograph which shows the pushing-up trace of the support film after the pick-up in the Example which concerns on this invention, (b) is the photograph which shows the pushing-up trace of the support film after the pick-up in a comparative example. It is a figure for demonstrating the clearance gap which arises between an adhesion layer and an adhesion layer in a pick-up process.

  Hereinafter, the film for semiconductor and the method for manufacturing a semiconductor device of the present invention will be described in detail based on preferred embodiments shown in the accompanying drawings.

<First Embodiment>
First, a first embodiment of a semiconductor film of the present invention and a method of manufacturing a semiconductor device of the present invention will be described.

  FIG. 1 is a diagram (longitudinal sectional view) for explaining a method for manufacturing a semiconductor film and a semiconductor device (mainly a dicing step) according to the first embodiment of the present invention, and FIG. 2 is a diagram for a semiconductor shown in FIG. FIG. 3 is a diagram for explaining a method for producing a film, and FIG. 3 is a diagram (longitudinal sectional view) for explaining a film for semiconductor and a method for producing a semiconductor device (mainly a pickup process) according to the first embodiment of the present invention. 4 is a top view for explaining the pick-up process shown in FIG. 3, FIG. 5 is a cross-sectional view taken along line AA in FIG. 4, and FIG. 6 (a) explains the pick-up process according to the present invention. FIG. 6B is a diagram for explaining the conventional pick-up process, FIG. 7A is a top view showing the support film after the pick-up process shown in FIG. 6A, and FIG. b) shows the support after the pickup process shown in FIG. FIG. 8 is a diagram (longitudinal sectional view) for explaining a method for manufacturing a semiconductor film and a semiconductor device (mainly a molding step) according to the first embodiment of the present invention, and FIG. It is a figure for demonstrating the clearance gap which arises between an adhesion layer and an adhesion layer in a pick-up process. In the following description, for convenience of explanation, the upper side in FIGS. 1, 2, 4, 5, 7, and 8 is referred to as “upper” and the lower side is referred to as “lower”.

[Semiconductor film]
A semiconductor film 10 shown in FIG. 1 has a support film 4, a first adhesive layer 1, a second adhesive layer 2, and an adhesive layer 3. More specifically, the semiconductor film 10 is obtained by laminating the second adhesive layer 2, the first adhesive layer 1, and the adhesive layer 3 on the support film 4 in this order.

  As will be described in detail later, the semiconductor film 10 is obtained by attaching the semiconductor wafer 7 to the upper surface of the adhesive layer 3, and cutting (dicing) the semiconductor wafer 7 and the adhesive layer 3 in this state to obtain individual pieces. The obtained piece (a piece 83 formed by laminating a semiconductor element 71 and an adhesive layer 31 described later) is picked up from the support film 4. Such a semiconductor film 10 has a function of supporting the semiconductor wafer 7 when the semiconductor wafer 7 is diced into individual pieces. In addition, when the semiconductor film 10 picks up the separated semiconductor wafer 7 (semiconductor element 71 described later) and the adhesive layer 3 (adhesive layer 31 described later), the first adhesive layer 1 and the adhesive layer 3 It is a thing which peels selectively between. Such a semiconductor film 10 has a function of providing an adhesive (adhesive layer 31 to be described later) for bonding the picked-up semiconductor element 71 on the insulating substrate 5.

  As will be described later in detail, the rigidity and thickness of the semiconductor film 10 are optimized. Thereby, at the time of pick-up, when the support film 4 is pushed up with the push-up pin, the deformation amount in the thickness direction of the support film 4 can be locally increased. Therefore, by pushing up the support film 4 with a push-up pin, a gap is easily generated at the interface of the semiconductor film 10 to be peeled off, and the pickup property can be improved. Thereby, even if the adhesiveness of the adhesive layer 3 or the like is increased, the pickup can be performed satisfactorily. In addition, since the adhesiveness of the adhesive layer 3 and the like can be increased, so-called chip jumping can be prevented during dicing, and the dicing property can be improved.

  In addition, since the elasticity of the support film 4 is relatively low, vibrations that accompany dicing can be absorbed by the support film 4 during dicing. As a result, damage to the semiconductor wafer 7 during dicing can be prevented.

  Further, the outer peripheral portion 41 of the support film 4 and the outer peripheral portion 21 of the second adhesive layer 2 exist outside the outer peripheral edge 11 of the first adhesive layer 1, respectively.

  Among these, the wafer ring 9 is affixed to the outer peripheral part 21 at the time of dicing at the time of manufacture of the semiconductor device 100 mentioned later. Thereby, the semiconductor wafer 7 is reliably supported.

Hereinafter, the configuration of each part of the semiconductor film 10 will be described in detail.
(First adhesive layer)
The first adhesive layer 1 is composed of a general adhesive. Specifically, the 1st adhesion layer 1 is comprised by the 1st resin composition containing an acrylic adhesive, a rubber-type adhesive, etc.

  Examples of the acrylic pressure-sensitive adhesive include resins composed of (meth) acrylic acid and esters thereof, (meth) acrylic acid and esters thereof, and unsaturated monomers copolymerizable therewith (for example, vinyl acetate, And copolymers with styrene, acrylonitrile, etc.). Two or more of these resins may be mixed.

  Among these, one or more selected from the group consisting of methyl (meth) acrylate, ethylhexyl (meth) acrylate and butyl (meth) acrylate, and hydroxyethyl (meth) acrylate and vinyl acetate A copolymer with one or more selected is preferred. Thereby, control of adhesiveness and adhesiveness with the other party (adherent body) which the 1st adhesion layer 1 adheres becomes easy.

  In addition, the first resin composition includes urethane acrylate, acrylate monomer, polyvalent isocyanate compound (for example, 2,4-tolylene diisocyanate, 2,6-tolylene diisocyanate) in order to control adhesiveness (adhesiveness). Monomers and oligomers such as isocyanate compounds may be added.

  Further, in the first resin composition, when the first adhesive layer 1 is cured by ultraviolet rays or the like, methoxyacetophenone, 2,2-dimethoxy-2-phenylacetophenone, 2,2-diethoxyacetophenone as a photopolymerization initiator, Acetophenone compounds such as 2-methyl-1- [4- (methylthio) -phenyl] -2-morpholinopropane-1, benzophenone compounds, benzoin compounds, benzoin isobutyl ether compounds, benzoin benzoic acid methyl compounds, benzoin Benzoic acid compounds, benzoin methyl ether compounds, benzylfinyl sulfide compounds, benzyl compounds, dibenzyl compounds, diacetyl compounds and the like may be added.

  In addition, the first resin composition includes a rosin resin, a terpene resin, a coumarone resin, a phenol resin, a styrene resin, an aliphatic petroleum resin, an aromatic petroleum resin, an aliphatic aroma for the purpose of increasing adhesive strength and shear strength. You may add tackifiers, such as a group petroleum resin.

  The average thickness of the first adhesive layer 1 is not particularly limited, but is preferably about 1 to 100 μm, more preferably about 3 to 50 μm. If the thickness is less than the lower limit, it may be difficult to ensure sufficient adhesive strength of the first adhesive layer 1. On the other hand, if the thickness exceeds the upper limit, the first push-up pin may follow the deformation of the support film 4 by the push-up pin depending on the push-up condition (push-up amount, tip shape, etc.) of the push-up pin during the pickup process described later. It becomes difficult for the adhesive layer 1 to be deformed, and as a result, the pick-up property may be lowered. Further, even if the thickness exceeds the upper limit, the characteristics are not affected so much and no advantage is obtained. In addition, when the thickness is within the above range, the first pressure-sensitive adhesive is excellent in dicing properties and pick-up properties because it is not peeled off particularly during dicing and can be peeled off relatively easily with a tensile load during pick-up. Layer 1 is obtained.

(Second adhesive layer)
The second adhesive layer 2 has higher adhesiveness than the first adhesive layer 1 described above. Thereby, the adhesive force of the second adhesive layer 2 to the first adhesive layer 1 and the support film 4 becomes larger than the adhesive force of the first adhesive layer 1 to the adhesive layer 3. Therefore, it is possible to cause peeling at a desired interface (that is, the interface between the first pressure-sensitive adhesive layer 1 and the adhesive layer 3) where peeling is to occur in a pickup process in manufacturing the semiconductor device 100 described later.

  Further, by increasing the adhesiveness of the second adhesive layer 2, in the second step of manufacturing the semiconductor device 100 described later, when the semiconductor wafer 7 is diced into individual pieces, The space between the wafer ring 9 and the wafer ring 9 is securely fixed. As a result, the positional deviation of the semiconductor wafer 7 is reliably prevented, and the dimensional accuracy of the semiconductor element 71 can be increased.

  As the second adhesive layer 2, the same material as the first adhesive layer 1 described above can be used. Specifically, the second adhesive layer 2 is composed of a second resin composition containing an acrylic adhesive, a rubber adhesive, and the like.

  Examples of the acrylic pressure-sensitive adhesive include resins composed of (meth) acrylic acid and esters thereof, (meth) acrylic acid and esters thereof, and unsaturated monomers copolymerizable therewith (for example, vinyl acetate, Copolymers with styrene, acrylonitrile, etc.) are used. Two or more kinds of these copolymers may be mixed.

  Of these, one or more selected from the group consisting of methyl (meth) acrylate, ethylhexyl (meth) acrylate and butyl (meth) acrylate, and selected from hydroxyethyl (meth) acrylate and vinyl acetate Preferred are copolymers with one or more of the above. Thereby, control of adhesiveness and adhesiveness with the other party (adhered body) which the 2nd adhesion layer 2 adheres becomes easy.

  In addition, the second resin composition includes urethane acrylate, an acrylate monomer, and a polyvalent isocyanate compound (for example, 2,4-tolylene diisocyanate, 2,6-tolylene diisocyanate) in order to control adhesiveness (adhesiveness). Monomers and oligomers such as isocyanate compounds may be added.

  Furthermore, you may add the photoinitiator similar to a 1st resin composition to a 2nd resin composition.

  Also, for the purpose of increasing adhesive strength and shear strength, tackifying rosin resin, terpene resin, coumarone resin, phenol resin, styrene resin, aliphatic petroleum resin, aromatic petroleum resin, aliphatic aromatic petroleum resin, etc. An agent or the like may be added.

  The average thickness of the second adhesive layer 2 is not particularly limited, but is preferably about 1 to 100 μm, and more preferably about 3 to 20 μm. If the thickness is less than the lower limit, it may be difficult to ensure sufficient adhesive strength of the second adhesive layer 2. On the other hand, when the thickness exceeds the upper limit, the second push-up pin may follow the deformation of the support film 4 by the push-up pin depending on the push-up condition (push-up amount, tip shape, etc.) of the push-up pin during the pickup process described later. It becomes difficult for the adhesive layer 2 to be deformed, and as a result, the pick-up property may be lowered. Moreover, even if this thickness exceeds the upper limit, a particularly excellent effect cannot be obtained. In addition, since the second adhesive layer 2 is higher in flexibility than the first adhesive layer 1, the shape following property of the second adhesive layer 2 is ensured if the average thickness of the second adhesive layer 2 is within the above range. Thus, the adhesion of the semiconductor film 10 to the semiconductor wafer 7 can be further enhanced.

(Adhesive layer)
The adhesive layer 3 is made of a third resin composition containing, for example, a thermoplastic resin and a thermosetting resin. Such a resin composition is excellent in film forming ability, adhesiveness, and heat resistance after curing.

  Among these, examples of the thermoplastic resin include polyimide resins such as polyimide resins and polyetherimide resins, polyamide resins such as polyamide resins and polyamideimide resins, acrylic resins, and phenoxy resins. Among these, acrylic resins are preferable. Since the acrylic resin has a low glass transition temperature, the initial adhesion of the adhesive layer 3 can be further improved.

  The acrylic resin means a polymer of acrylic acid and its derivatives and a copolymer with other monomers, specifically, acrylic acid, methacrylic acid, methyl acrylate, ethyl acrylate, etc. Examples thereof include methacrylate esters such as acrylic ester, methyl methacrylate and ethyl methacrylate, polymers such as acrylonitrile and acrylamide, and copolymers with other monomers.

  Among acrylic resins, acrylic resins (particularly acrylic ester copolymers) having a compound having a functional group such as epoxy group, hydroxyl group, carboxyl group, nitrile group (copolymerization monomer component) are preferable. Thereby, the adhesiveness to adherends, such as semiconductor element 71, can be improved more. Specific examples of the compound having a functional group include glycidyl methacrylate having a glycidyl ether group, hydroxy methacrylate having a hydroxyl group, carboxy methacrylate having a carboxyl group, and acrylonitrile having a nitrile group.

  The compounding amount of the compound having the functional group is not particularly limited, but is preferably about 0.5 to 40% by mass, more preferably about 5 to 30% by mass of the entire acrylic resin. . If the blending amount is less than the lower limit value, the effect of improving the adhesion may be reduced, and if it exceeds the upper limit value, the adhesive force is too strong and the effect of improving workability may be reduced.

  The glass transition temperature Tg of the thermoplastic resin is not particularly limited, but is preferably −25 to 120 ° C., more preferably −20 to 60 ° C., and more preferably −10 to 50 ° C. Further preferred. If the glass transition temperature is less than the lower limit, the adhesive strength of the adhesive layer 3 may be increased and workability may be reduced. If the glass transition temperature exceeds the upper limit, the effect of improving the low temperature adhesiveness may be reduced.

  Further, the weight average molecular weight of the thermoplastic resin (particularly acrylic resin) is not particularly limited, but is preferably 100,000 or more, particularly preferably 150,000 to 1,000,000. When the weight average molecular weight is within the above range, the film formability of the adhesive layer 3 can be particularly improved.

  On the other hand, examples of thermosetting resins include phenol novolac resins, cresol novolak resins, novolac type phenol resins such as bisphenol A novolak resins, phenol resins such as resol type phenol resins, bisphenols such as bisphenol A epoxy resins and bisphenol F epoxy resins. Type epoxy resin, novolac epoxy resin, novolak type epoxy resin such as cresol novolak epoxy resin, biphenyl type epoxy resin, stilbene type epoxy resin, triphenolmethane type epoxy resin, alkyl-modified triphenolmethane type epoxy resin, epoxy resin containing triazine nucleus , Epoxy resins such as dicyclopentadiene-modified phenolic epoxy resins, urea (urea) resins, resins having a triazine ring such as melamine resins, Japanese polyester resin, bismaleimide resin, polyurethane resin, diallyl phthalate resin, silicone resin, resin having benzoxazine ring, cyanate ester resin, and the like, and one or a mixture of two or more of these may be used. Also good. Of these, epoxy resins or phenol resins are preferred. According to these resins, the heat resistance and adhesion of the adhesive layer 3 can be further improved.

  Further, the content of the thermosetting resin is not particularly limited, but is preferably about 1 to 400 parts by mass, more preferably about 3 to 300 parts by mass with respect to 100 parts by mass of the thermoplastic resin. . If the content exceeds the upper limit, chipping and cracking may occur, or the effect of improving the adhesion may be reduced.If the content is lower than the lower limit, the adhesive force is too strong and pickup failure is caused. This may occur or the effect of improving workability may be reduced.

  The third resin composition preferably further contains a curing agent (in particular, when the thermosetting resin is an epoxy resin, a phenolic curing agent).

  Examples of the curing agent include aliphatic polyamines such as diethylenetriamine (DETA), triethylenetetramine (TETA), and metaxylylenediamine (MXDA), diaminodiphenylmethane (DDM), m-phenylenediamine (MPDA), diaminodiphenylsulfone ( DDS) and other aromatic polyamines, dicyandiamide (DICY), amine-based curing agents such as polyamine compounds containing organic acid dihydralazide, and the like, alicyclic acids such as hexahydrophthalic anhydride (HHPA) and methyltetrahydrophthalic anhydride (MTHPA) Acid anhydride curing agents such as anhydrides (liquid acid anhydrides), trimellitic anhydride (TMA), pyromellitic anhydride (PMDA), and benzophenone tetracarboxylic acid (BTDA), phenolic resins Phenolic Agents, and the like. Among these, a phenolic curing agent is preferable, and specifically, bis (4-hydroxy-3,5-dimethylphenyl) methane (common name: tetramethylbisphenol F), 4,4′-sulfonyldiphenol, 4,4′- Isopropylidenediphenol (commonly called bisphenol A), bis (4-hydroxyphenyl) methane, bis (2-hydroxyphenyl) methane, (2-hydroxyphenyl) (4-hydroxyphenyl) methane, and bis (4- Hydroxyphenyl) methane, bis (2-hydroxyphenyl) methane, (2-hydroxyphenyl) (4-hydroxyphenyl) methane, a mixture of three types (for example, bisphenol FD manufactured by Honshu Chemical Industry Co., Ltd.) Bisphenols, 1,2-benzenediol, 1,3-benzenedio Dihydroxybenzenes such as 1,4-benzenediol, trihydroxybenzenes such as 1,2,4-benzenetriol, various isomers of dihydroxynaphthalenes such as 1,6-dihydroxynaphthalene, 2,2′- Examples include compounds such as various isomers of biphenols such as biphenol and 4,4′-biphenol.

  Further, the content of the curing agent (particularly the phenol-based curing agent) is not particularly limited, but is preferably 1 to 400 parts by mass, particularly 3 to 200 parts by mass with respect to 100 parts by mass of the thermoplastic resin. Is more preferable. If the content is less than the lower limit, the effect of improving the heat resistance of the adhesive layer 3 may be reduced, and if the content exceeds the upper limit, the storage stability of the adhesive layer 3 may be reduced.

  In addition, when the above-described thermosetting resin is an epoxy resin, it can be determined by calculating the equivalent ratio of the epoxy resin and the curing agent, and the number of epoxy groups of the epoxy resin and the number of functional groups of the curing agent (for example, a phenol resin). The ratio of the number of phenolic hydroxyl groups is preferably 0.5 to 1.5, particularly preferably 0.7 to 1.3. If the content is less than the lower limit, the fluidity storage stability may be reduced, and if the content exceeds the upper limit, the effect of improving the heat resistance may be reduced.

  The third resin composition is not particularly limited, but preferably further contains a curing catalyst (curing accelerator). Thereby, the sclerosis | hardenability of the contact bonding layer 3 can be improved.

  Examples of the curing catalyst include amine catalysts such as imidazoles and 1,8-diazabicyclo (5,4,0) undecene, phosphorus catalysts such as triphenylphosphine, and the like. Of these, imidazoles are preferred. Thereby, especially quick curability and preservability can be made compatible.

  Examples of imidazoles include 1-benzyl-2-methylimidazole, 1-benzyl-2-phenylimidazole, 1-cyanoethyl-2-ethyl-4-methylimidazole, 2-phenyl-4-methylimidazole, 1-cyanoethyl-2- Phenylimidazolium trimellitate, 2,4-diamino-6- [2'-methylimidazolyl- (1 ')]-ethyl-s-triazine, 2,4-diamino-6- [2'-undecylimidazolyl- (1 ′)]-Ethyl-s-triazine, 2,4-diamino-6- [2′-ethyl-4′methylimidazolyl- (1 ′)]-ethyl-s-triazine, 2,4-diamino-6 -[2'-Methylimidazolyl- (1 ')]-ethyl-s-triazine isocyanuric acid adduct, 2-phenylimidazole Null acid adduct, 2-phenyl-4,5-dihydroxymethylimidazole, 2-phenyl-4-methyl-5-hydroxymethylimidazole, 2,4-diamino-6-vinyl-s-triazine, 2,4-diamino -6-vinyl-s-triazine isocyanuric acid adduct, 2,4-diamino-6-methacryloyloxyethyl-s-triazine, 2,4-diamino-6-methacryloyloxyethyl-s-triazine isocyanuric acid adduct, etc. Can be mentioned. Among these, 2-phenyl-4,5-dihydroxymethylimidazole or 2-phenyl-4-methyl-5-hydroxymethylimidazole is preferable. Thereby, the storage stability can be particularly improved.

  Further, the content of the curing catalyst is not particularly limited, but is preferably about 0.01 to 30 parts by mass, particularly about 0.5 to 10 parts by mass with respect to 100 parts by mass of the thermoplastic resin. More preferred. If the content is less than the lower limit, the curability may be insufficient, and if the content exceeds the upper limit, the storage stability may decrease.

  The average particle diameter of the curing catalyst is not particularly limited, but is preferably 10 μm or less, and more preferably 1 to 5 μm. When the average particle size is within the above range, the reactivity of the curing catalyst is particularly excellent.

  The third resin composition is not particularly limited, but preferably further includes a coupling agent. Thereby, the adhesiveness of resin, a to-be-adhered body, and a resin interface can be improved more.

  Examples of the coupling agent include a silane coupling agent, a titanium coupling agent, and an aluminum coupling agent. Of these, silane coupling agents are preferred. Thereby, heat resistance can be improved more.

  Among these, as the silane coupling agent, for example, vinyltrichlorosilane, vinyltrimethoxysilane, vinyltriethoxysilane, β- (3,4-epoxycyclohexyl) ethyltrimethoxysilane, γ-glycidoxypropyltrimethoxysilane, γ-glycidoxypropylmethyldimethoxysilane, γ-methacryloxypropyltrimethoxysilane, γ-methacryloxypropylmethyldiethoxysilane, γ-methacryloxypropyltriethoxysilane, N-β (aminoethyl) γ-aminopropylmethyl Dimethoxysilane, N-β (aminoethyl) γ-aminopropyltrimethoxysilane, N-β (aminoethyl) γ-aminopropyltriethoxysilane, γ-aminopropyltrimethoxysilane, γ-aminopropyltriethoxysila N-phenyl-γ-aminopropyltrimethoxysilane, γ-chloropropyltrimethoxysilane, γ-mercaptopropyltrimethoxysilane, 3-isocyanatopropyltriethoxysilane, 3-acryloxypropyltrimethoxysilane, bis (3 -Triethoxysilylpropyl) tetrasulfane and the like.

  Although content of a coupling agent is not specifically limited, It is preferable that it is about 0.01-10 mass parts with respect to 100 mass parts of thermoplastic resins, and it is more about 0.5-10 mass parts especially. preferable. If the content is less than the lower limit, the effect of adhesion may be insufficient, and if it exceeds the upper limit, it may cause outgassing or voids.

  In forming the adhesive layer 3, such a third resin composition is dissolved in a solvent such as methyl ethyl ketone, acetone, toluene, dimethylformaldehyde and the like to form a varnish, followed by a comma coater, a die coater, The adhesive layer 3 can be obtained by coating on a carrier film using a gravure coater or the like and drying.

  The average thickness of the adhesive layer 3 is not particularly limited, but is preferably about 3 to 100 μm, and more preferably about 5 to 70 μm. When the thickness is within the above range, it is particularly easy to control the thickness accuracy.

  Moreover, the 3rd resin composition may contain the filler as needed. By including the filler, the mechanical properties and adhesive strength of the adhesive layer 3 can be improved.

  Examples of the filler include particles of silver, titanium oxide, silica, mica, and the like.

  Moreover, it is preferable that the average particle diameter of a filler is about 0.01-25 micrometers. If the average particle size is less than the lower limit, the effect of filler addition is reduced, and if it exceeds the upper limit, the adhesive strength as a film may be reduced.

  Although content of a filler is not specifically limited, It is preferable that it is about 0.1-100 mass part with respect to 100 mass parts of thermoplastic resins, and it is more preferable that it is especially about 5-90 mass parts. Thereby, the adhesive force can be further increased while enhancing the mechanical properties of the adhesive layer 3.

(Support film)
The support film 4 is a support that supports the first adhesive layer 1, the second adhesive layer 2, and the adhesive layer 3 as described above.

  In particular, the support film 4 has a rigidity at 23 ° C. (room temperature) of 40 N or more and 1,000 N or less and a thickness of 100 μm or less.

  Thereby, at the time of the pickup mentioned later, when the support film 4 is pushed up by the push-up pin, the deformation amount in the thickness direction of the support film 4 can be locally increased. Therefore, by pushing up the support film 4 with a push-up pin, a gap is easily generated at the interface of the semiconductor film 10 to be peeled off, and the pickup property can be improved. Thereby, even if the adhesiveness of the adhesive layer 3 or the like is increased, the pickup can be performed satisfactorily. In addition, since the adhesiveness of the adhesive layer 3 and the like can be increased, so-called chip jumping can be prevented during dicing, and the dicing property can be improved.

  In addition, since the elasticity of the support film 4 is relatively low, vibrations that accompany dicing can be absorbed by the support film 4 during dicing. As a result, damage to the semiconductor wafer 7 during dicing can be prevented.

Here, “rigidity” means that the tensile modulus (Young's modulus) of the object (support film 4) at 23 ° C. (room temperature) is E [MPa], and the cross-sectional area (cross-sectional area) of the test piece of the object is S. When it is [mm ² ], it is E × S. More specifically, the “stiffness of the support film 4” (E × S) is obtained by cutting the support film 4 with a width of 10 mm and a length of 100 mm to obtain a strip-shaped test piece. The tensile elastic modulus E is measured at a test temperature of 23 ° C. (room temperature) and a test speed of 1,000 mm / min using an RTA-100 (manufactured by Kuh company). Multiply by (area) S.

  Further, the rigidity of the support film 4 at 23 ° C. (room temperature) is determined according to the thickness of the support film 4, the push-up amount of the push-up pin, and the like, and may be 40N or more and 1,000N or less as described above. Is more preferably 40N or more and 700N or less, and further preferably 40N or more and 300N or less. On the other hand, if the rigidity is less than the lower limit value, it is difficult to ensure the mechanical strength necessary for the support film 4, and the push-up pin is supported unless the push-up amount of the push-up pin is controlled with high accuracy. There is a risk of damaging the piece 83 by breaking through the film 4. On the other hand, when the rigidity exceeds the upper limit, depending on the thickness of the support film 4, the tip shape of the push-up pin, the push-up amount, etc., the amount of deformation in the thickness direction of the support film 4 caused by the push-up pin is locally increased. There are cases where it cannot be enlarged.

Moreover, it is preferable that the bending rigidity in 23 degreeC (room temperature) of the support film 4 is 0.25 N * mm < ² > or less.

Here, the “bending rigidity” is the tensile elastic modulus at 23 ° C. (room temperature) of the object (support film 4) as E [MPa], and the cross-sectional secondary moment of the test piece of the object as I [mm ⁴ ]. E × I. More specifically, “the bending rigidity of the support film 4” (E × I) is obtained by cutting the support film 4 into a width of 10 mm and a length of 100 mm to obtain a strip-shaped test piece. The tensile elastic modulus E was measured at a test temperature of 23 ° C. (room temperature) and a test speed of 1,000 mm / min using an orientec RTA-100). It can be obtained by multiplying by the moment I. The cross-sectional secondary moment I of the test piece is w × h ³ when the width of the test piece is w [mm] and the thickness of the test piece (that is, the thickness of the support film 4) is h [mm]. / 12.

  Further, the tensile elastic modulus E at 23 ° C. (room temperature) of the support film 4 is not particularly limited as long as it can realize the rigidity as described above, but is preferably 50 to 3,000 MPa, and preferably 50 to More preferably, it is 1,000 MPa. If the tensile elastic modulus is less than the lower limit, the push-up pin may break through the support film 4 depending on the thickness of the support film 4, the tip shape of the push-up pin, the push-up amount, etc., and the piece 83 may be damaged. On the other hand, when the tensile modulus exceeds the upper limit, depending on the thickness of the support film 4, the tip shape of the push-up pin, the push-up amount, etc., the amount of deformation in the thickness direction of the support film 4 caused by the push-up pin is locally increased. There are cases where it cannot be made large.

  The constituent material of the support film 4 is not particularly limited as long as it can realize the rigidity as described above. For example, a polyolefin resin such as polyethylene, polypropylene, polybutene, polybutadiene, polymethylpentene, Polyvinyl chloride, vinyl chloride copolymer, polyethylene terephthalate, polybutylene terephthalate, polyurethane, ethylene vinyl acetate copolymer, ionomer, ethylene / (meth) acrylic acid copolymer, ethylene / (meth) acrylic acid ester copolymer , Polystyrene, vinyl polyisoprene, polycarbonate, etc., or copolymers, blends, polymer alloys, etc. mainly composed of these, and combinations of one or more of these (for example, lamination of two or more layers) As body).

  Moreover, the glass transition temperature of the support film 4 is preferably 0 ° C. or higher and 100 ° C. or lower, and more preferably 0 ° C. or higher and 30 ° C. or lower. Thereby, the rigidity of the support film 4 can be maintained in the above-described range in the semiconductor device manufacturing process (particularly, the pickup process).

  Here, the glass transition temperature is measured using a dynamic viscoelasticity measuring device (manufactured by Seiko Instruments Inc., model number: DMS6100), measurement sample size: 4 mm (width) × 20 mm (length) × 100 μm (thickness), frequency 1 Hz, measurement temperature range: 30 to 300 ° C., temperature rising rate: temperature at which a Tan δ peak appears when measured at 10 ° C./min.

  Moreover, although the average thickness of the support film 4 should just be 100 micrometers or less, it is preferable that it is about 5-100 micrometers, and it is more preferable that it is about 30-100 micrometers. Thereby, while ensuring the mechanical strength required for the support film 4, when the support film 4 is pushed up by the push-up pin, the support film 4 can be locally deformed so as to follow the tip of the push-up pin. it can.

  Further, the yield point stress of the support film 4 is preferably 10 MPa or more and 200 MPa or less, and more preferably 10 MPa or more and 100 MPa or less. Thereby, in the pick-up process as described later, when pushed up by the push-up pin, the support film 4 can be plastically deformed to form a push-up mark having an area in plan view corresponding to the push-up amount. . In addition, the plastic deformation can suitably cause a gap at the interface to be peeled off of the semiconductor film 10 at the time of picking up (preventing the gap from becoming small after the gap is generated) and improve the picking up property.

  On the other hand, when the yield point stress is less than the lower limit, the push-up pin may break through the support film 4 depending on the thickness of the support film 4, the push-up amount of the push-up pin, and the like. On the other hand, when the tensile strength exceeds the upper limit, depending on the thickness of the support film 4, the push-up amount of the push-up pin, the plastic deformation of the support film 4 due to the push-up of the push-up pin does not occur, It is difficult to suitably create a gap at the interface of the film 10 to be peeled.

(Characteristics of semiconductor film)
Although the 1st adhesion layer 1, the 2nd adhesion layer 2, and the contact bonding layer 3 have mutually different adhesive force (adhesion force), they are explained in full detail below.

  As described above, the adhesive force of the second adhesive layer 2 to the first adhesive layer 1 and the support film 4 is greater than the adhesive force of the first adhesive layer 1 to the adhesive layer 3. Thereby, when the piece 83 is picked up, it can prevent that the interface of the 1st adhesion layer 1 and the 2nd adhesion layer 2 peels unintentionally. That is, peeling can be selectively caused at the interface between the first adhesive layer 1 and the adhesive layer 3.

  That is, since the adhesive layer composed of two layers of the first adhesive layer 1 and the second adhesive layer 2 is used, by differentiating the respective adhesion forces, as described above, the semiconductor wafer 7 at the time of dicing can be obtained. It is possible to achieve both secure fixing and easy pick-up of the piece 83. In other words, both dicing properties and pickup properties can be achieved.

  Moreover, the adhesive force with respect to the 2nd adhesion layer 2 of the 1st adhesion layer 1 is although it does not specifically limit, It is preferable that it is about 100-1,000 cN / 25mm, and it is especially about 300-1,000 cN / 25mm. More preferred. When the adhesion is within the above range, the dicing property and the pickup property are particularly excellent.

  In addition, “cN / 25 mm”, which is a unit of the above-mentioned adhesion (adhesive strength), is obtained by forming a sample in which the second adhesive layer 2 is pasted on the surface of the first adhesive layer 1 into a strip shape having a width of 25 mm, and then 23 ° C. At (room temperature), the load (unit cN) when the second adhesive layer 2 portion is peeled off at a peeling angle of 180 ° and a pulling speed of 1,000 mm / min in this laminated film is shown. That is, here, the adhesion force of the first adhesive layer 1 to the second adhesive layer 2 will be described as 180 ° peel strength.

  Further, the adhesion force of the first adhesive layer 1 to the adhesive layer 3 is preferably smaller than the adhesion force of the adhesive layer 3 to the semiconductor wafer 7. Thereby, when the piece 83 is picked up, it is possible to prevent the interface between the semiconductor wafer 7 and the adhesive layer 3 from being unintentionally peeled off. That is, peeling can be selectively caused at the interface between the first adhesive layer 1 and the adhesive layer 3.

  Further, the adhesion force of the adhesive layer 3 to the semiconductor wafer 7 is not particularly limited, but is preferably about 50 to 500 cN / 25 mm, and more preferably about 80 to 250 cN / 25 mm. When the adhesion force is within the above range, it is possible to sufficiently prevent the occurrence of so-called “chip jump” in which the semiconductor element 71 flies off due to vibration or impact particularly during dicing.

  Note that “cN / 25 mm”, which is a unit of adhesion (adhesive strength), is obtained by attaching a strip-shaped adhesive layer 3 having a width of 25 mm to the surface of the semiconductor wafer 7 and then bonding the adhesive at 23 ° C. (room temperature). The load (unit cN) when the layer 3 is peeled off at a peeling angle of 180 ° and a pulling speed of 1,000 mm / min is shown. That is, here, the adhesion force of the adhesive layer 3 to the semiconductor wafer 7 will be described as 180 ° peel strength.

  Moreover, it is preferable that the adhesive force of the first adhesive layer 1 to the adhesive layer 3 is smaller than the adhesive force of the second adhesive layer 2 to the wafer ring 9. Thereby, in the 3rd process mentioned later, when picking up the piece 83, between the adhesion layer 3 and the 1st adhesion layer 1 without peeling between the 2nd adhesion layer 2 and the wafer ring 9, Peels selectively. When dicing, the laminated body 8 can be reliably supported by the wafer ring 9.

  The adhesion force of the first adhesive layer 1 to the adhesive layer 3 and the adhesion force of the second adhesive layer 2 to the wafer ring 9 are the kind (composition) of the acrylic resin, the kind of monomer, and the content, respectively. It can be adjusted by changing the hardness or the like.

  In addition, the adhesion force of the first adhesive layer 1 to the adhesive layer 3 before dicing is not particularly limited, but is preferably about 10 to 80 cN / 25 mm on average, particularly about 30 to 60 cN / 25 mm. Is more preferable. When the adhesive force is within the above range, problems such as the semiconductor element 71 falling off the first adhesive layer 1 when the laminated body 8 is expanded (expanded) as described later or the laminated body 8 is diced are prevented. In addition, excellent pick-up properties are ensured.

  Note that “cN / 25 mm”, which is a unit of the above-mentioned adhesion (adhesive strength), is a 25 mm wide strip of a sample in which the adhesive layer 3 is pasted on the surface of the first adhesive layer 1, and then 23 ° C. (room temperature ) Represents a load (unit cN) when the adhesive layer portion of the laminated film is peeled off at a peeling angle of 180 ° and a pulling speed of 1,000 mm / min. That is, here, the adhesion force of the first adhesive layer 1 to the adhesive layer 3 will be described as 180 ° peel strength.

  As a composition of the 1st adhesion layer 1 which has the above characteristics, 1-50 mass parts of acrylate monomers and 0.1-10 mass parts of isocyanate compounds are mix | blended with respect to 100 mass parts of acrylic resins, for example. The thing which was done is mentioned.

  On the other hand, the adhesion force of the second adhesive layer 2 to the wafer ring 9 is not particularly limited, but is preferably about 100 to 2,000 cN / 25 mm on the average of the adhesion interface, particularly about 400 to 1,200 cN / 25 mm. More preferably. When the adhesion is within the above range, when the laminate 8 is expanded (expanded) as described later, or when the laminate 8 is diced, the interface between the first adhesive layer 1 and the second adhesive layer 2 is peeled off. As a result, the semiconductor element 71 is reliably prevented from falling off. Further, the laminated body 8 can be reliably supported by the wafer ring 9.

  Note that “cN / 25 mm”, which is a unit of adhesion (adhesive strength), is obtained by attaching a strip-shaped second adhesive layer 2 having a width of 25 mm on the upper surface of the wafer ring 9 at 23 ° C. (room temperature), and then 23 This represents the load (unit cN) when the second adhesive layer 2 is peeled off at a peeling angle of 180 ° and a pulling speed of 1,000 mm / min at ° C. (room temperature). That is, here, the adhesion force of the second adhesive layer 2 to the wafer ring 9 will be described as 180 ° peel strength.

  As a composition of the 2nd adhesion layer 2 which has the above characteristics, for example with respect to 100 mass parts of acrylic resins, 1-50 mass parts of urethane acrylate, 0.5-10 mass parts of isocyanate compounds, and light What mixed 1-5 mass parts of acetophenone type compounds as a polymerization initiator, and irradiated the ultraviolet-ray light is mentioned.

Further, the adhesion to the first adhesive layer 3 of the adhesive layer 1 and A _1, when the adhesion to the first adhesive layer 1 of the second adhesive layer 2 and the A _2, A 2 _/ A ₁ is not particularly limited However, it is preferable that it is about 5-200, and it is more preferable that it is about 10-50. Thereby, the 1st adhesion layer 1, the 2nd adhesion layer 2, and the contact bonding layer 3 become the thing especially excellent in dicing property and pick-up property.

(Manufacturing method of semiconductor film)
The semiconductor film 10 as described above is manufactured, for example, by the following method.

  First, the base material 4a shown in FIG. 2A is prepared, and the first adhesive layer 1 is formed on one surface of the base material 4a. Thereby, the laminated body 61 of the base material 4a and the 1st adhesion layer 1 is obtained. The first adhesive layer 1 is formed by applying the above-described resin varnish containing the first resin composition by various application methods and then drying the applied film, or laminating a film made of the first resin composition. It can be performed by a method or the like. Further, the coating film may be cured by irradiating radiation such as ultraviolet rays.

  Examples of the coating method include a knife coating method, a roll coating method, a spray coating method, a gravure coating method, a bar coating method, and a curtain coating method.

  Further, in the same manner as the laminated body 61, as shown in FIG. 2A, the adhesive layer 3 is formed on one surface of the prepared base material 4b, whereby the base material 4b and the adhesive layer 3 are formed. The laminate 62 is obtained.

  Further, in the same manner as each of the laminates 61 and 62, as shown in FIG. 2A, the second adhesive layer 2 is formed on one surface of the prepared support film 4, whereby the support film 4 And the second adhesive layer 2 are obtained.

  Next, as illustrated in FIG. 2B, the stacked body 61 and the stacked body 62 are stacked so that the first adhesive layer 1 and the adhesive layer 3 are in contact with each other to obtain a stacked body 64. This lamination can be performed by, for example, a roll lamination method.

  Next, as shown in FIG. 2C, the substrate 4 a is peeled from the laminate 64. And as shown in FIG.2 (d), the outer part of the effective area | region of the said adhesive layer 3 and the said 1st adhesion layer 1 leaves the base material 4b with respect to the laminated body 64 which peeled the said base material 4a. Is removed in a ring shape. Here, the effective area refers to an area whose outer periphery is larger than the outer diameter of the semiconductor wafer 7 and smaller than the inner diameter of the wafer ring 9.

  Next, as shown in FIG. 2 (e), a laminate in which the substrate 4 a is peeled off and the outer portion of the effective area is removed in a ring shape so that the second adhesive layer 2 is in contact with the exposed surface of the first adhesive layer 1. 64 and the laminated body 63 are laminated. Then, the film 10 for semiconductors shown in FIG.2 (f) is obtained by peeling the base material 4b.

[Method for Manufacturing Semiconductor Device]
Next, a method for manufacturing the semiconductor device 100 using the semiconductor film 10 as described above will be described.

  The manufacturing method of the semiconductor device 100 includes a first step of laminating (sticking) the semiconductor wafer 7 and the semiconductor film 10 to obtain the laminated body 8, and attaching the outer peripheral portion 21 of the semiconductor film 10 to the wafer ring 9. In the attached state, the semiconductor wafer 7 and the adhesive layer 3 are separated into individual pieces by providing a cut 81 (dicing) in the stacked body 8 from the semiconductor wafer 7 side, and a plurality of pieces made of the semiconductor element 71 and the adhesive layer 31 are obtained. A second step (dicing step) for obtaining 83, a third step (pickup step) for picking up at least one of the pieces 83, and the picked piece 83 is placed on the insulating substrate 5, and a semiconductor And a fourth step of obtaining the device 100. Hereinafter, each step will be described in detail.

[1]
[1-1] First, a semiconductor wafer 7 and a semiconductor film 10 are prepared.

  The semiconductor wafer 7 has a plurality of circuits formed on its surface in advance. Examples of the semiconductor wafer 7 include a silicon semiconductor, a compound semiconductor wafer such as gallium arsenide and gallium nitride.

  The average thickness of the semiconductor wafer 7 is not particularly limited, and is preferably about 0.01 to 1 mm, more preferably about 0.03 to 0.5 mm. According to the method of manufacturing a semiconductor device using the semiconductor film 10 as described above, the semiconductor wafer 7 having such a thickness can be easily and reliably cut without causing defects such as chipping and cracking. And can be singulated.

  [1-2] Next, as shown in FIG. 1A, the semiconductor film 10 and the semiconductor wafer 7 are bonded to each other while the adhesive layer 3 of the semiconductor film 10 and the semiconductor wafer 7 are brought into close contact with each other. Are stacked (first step). In the semiconductor film 10 shown in FIG. 1, the size and shape of the adhesive layer 3 in plan view are set to be larger than the semiconductor wafer 7 and smaller than the inner diameter of the wafer ring 9. For this reason, the entire lower surface of the semiconductor wafer 7 is in close contact with the entire upper surface of the adhesive layer 3, whereby the semiconductor wafer 7 is supported by the semiconductor film 10. The size and shape of the adhesive layer 3 in plan view may be set to be the same as that of the semiconductor wafer 7.

  As a result of the above lamination, as shown in FIG. 1B, a laminated body 8 in which the semiconductor film 10 and the semiconductor wafer 7 are laminated is obtained.

[2]
[2-1] Next, a wafer ring 9 is prepared. Subsequently, the stacked body 8 and the wafer ring 9 are stacked so that the upper surface of the outer peripheral portion 21 of the second adhesive layer 2 and the lower surface of the wafer ring 9 are in close contact with each other. Thereby, the outer peripheral part of the laminated body 8 is supported by the wafer ring 9.

  Since the wafer ring 9 is generally made of various metal materials such as stainless steel and aluminum, the wafer ring 9 has high rigidity and can surely prevent the laminate 8 from being deformed.

  By having two adhesive layers (first adhesive layer 1 and second adhesive layer 2) having different adhesiveness as described above, the semiconductor film 10 utilizes the difference in adhesiveness, Both dicing and pickup properties can be achieved.

  [2-2] Next, the laminate 8 is placed on the dicer table 302 so that the dicer table 302 and the support film 4 are in contact with each other.

  Subsequently, as shown in FIG. 1C, a plurality of cuts 81 are formed in the laminate 8 using a dicing blade 82 (dicing). The dicing blade 82 is composed of a disk-shaped diamond blade or the like, and a cut 81 is formed by pressing the dicing blade 82 against the surface of the laminated body 8 on the semiconductor wafer 7 side. Then, the semiconductor wafer 7 is separated into a plurality of semiconductor elements 71 by relatively moving the dicing blade 82 along the gap between the circuit patterns formed on the semiconductor wafer 7 (second step). ). Similarly, the adhesive layer 3 is divided into a plurality of adhesive layers 31. During such dicing, vibration and impact are applied to the semiconductor wafer 7, but the lower surface of the semiconductor wafer 7 is supported by the semiconductor film 10, so that the vibration and impact are alleviated. As a result, the occurrence of defects such as cracks and chippings in the semiconductor wafer 7 can be reliably prevented.

  The front end (deepest part) of the cut 81 reaches the support film 4. Thereby, both the semiconductor wafer 7 and the adhesive layer 3 can be surely separated into individual pieces, and the semiconductor element 71 and the adhesive layer 31 can be obtained. The depth of the notch 81 may be any depth that can penetrate the semiconductor wafer 7 and the adhesive layer 3. For example, when the depth of the notch 81 can be controlled with high accuracy, The deepest part is located in the middle of the first adhesive layer or the second adhesive layer 2 or at the interface between the first adhesive layer 1 and the second adhesive layer 2 or at the interface between the second adhesive layer 2 and the support film 4. May be.

[3]
[3-1] Next, the laminate 8 in which the plurality of cuts 81 are formed is radially expanded (expanded) by an expanding device (not shown). Thereby, as shown in FIG.1 (d), the width | variety of the notch 81 formed in the laminated body 8 spreads, and the space | interval of the semiconductor elements 71 separated into pieces is also expanded in connection with it. As a result, there is no possibility that the semiconductor elements 71 interfere with each other, and the individual semiconductor elements 71 can be easily picked up. Note that the expanding device is configured to maintain such an expanded state even in a process described later.

  [3-2] Next, the die bonder 250 shown in FIG. 3 attracts one of the separated semiconductor elements 71 and pulls it upward. As a result, as shown in FIG. 3E, the interface between the adhesive layer 31 and the first adhesive layer 1 is selectively peeled off, and an individual piece 83 formed by laminating the semiconductor element 71 and the adhesive layer 31 is picked up. (Third step).

  Further, as described above, when picking up the individual piece 83, the target individual piece 83 is pushed upward from below the stacked body 8.

Here, the die bonder 250 will be described.
The die bonder 250 shown in FIG. 3 has a function of picking up the individual piece 83 obtained through the dicing process and a function of transferring the picked up individual piece 83 onto the insulating substrate 5.

  Such a die bonder 250 includes a collet (chip adsorbing portion) 260 that adsorbs the individual pieces 83, a heater 270 that heats the insulating substrate 5 from below, an apparatus main body 280 that supports the collet 260, and a laminate 8 (particularly a support). And a push-up device (supporting film suction portion) 400 that pushes up the piece 83 while adsorbing and fixing the film 4).

  The push-up device 400 has a suction table 410 for sucking and fixing the surface opposite to the piece 83 of the support film 4 and a plurality (five in the present embodiment) push-up pins (five in this embodiment). Needle) 420 and a holder 430 that holds a plurality of push-up pins 420.

  The upper surface of the adsorption platform 410 is adsorbed on the surface of the laminated body 8 opposite to the adhesive layer 3 of the support film 4. Further, the suction stand 410 sucks the portion corresponding to the piece 83 to be picked up and the vicinity thereof in the support film 4.

  The suction table 410 has a substantially annular groove 411 formed on the top surface thereof, and a plurality of suction holes 412 formed in the circumferential direction on the bottom surface of the groove 411. In addition, a plurality of suction holes 413 are provided inside the groove 411 side by side in the circumferential direction of the groove 411. Furthermore, a plurality of suction holes 414 are formed inside the plurality of suction holes 413 so as to be aligned in the circumferential direction of the groove 411. A suction hole 415 is formed inside the plurality of suction holes 414.

  Further, the suction table 410 has a columnar hollow portion 410a that communicates with each of the suction holes 412, 413, 414, and 415, and the hollow portion 410a has a suction device (a suction device for making the inside of the hollow portion 410a negative pressure). (Not shown) is connected. As a result, the inside of the groove 411 and the suction holes 412, 413, 414, and 415 can be set to a negative pressure, and the stacked body 8 can be adsorbed and fixed to the upper surface of the adsorption table 410.

  A holder 430 for holding a plurality of push-up pins 420 is inserted into the suction table 410 (inside the hollow portion 410a).

  The plurality of push-up pins 420 are inserted into the four push-up pins 420a, 420b, 420c, and 420d, and the suction holes 415, which are inserted into four suction holes that are equidistant from each other in the circumferential direction among the plurality of suction holes 413. It consists of one push-up pin 420e.

  In the present embodiment, these push-up pins 420 are configured with the same dimensions (diameter, length, shape, etc.).

Note that the push-up pins 420 may have different dimensions. Further, the number of the push-up pins 420 is determined according to the size of the piece 83, the arrangement of the push-up pins, etc., and is not limited to the above-described one, and may be 1 to 4, Although it may be 6 or more, it is preferably about 1 to 50, and is preferably about 1 to 7 per 10 mm ² of the area of the piece 83.

  These push-up pins 420 are held by the holder 430 so that they are parallel to each other and the tips are aligned (the distance between the top surface of the suction stand 410 and the tip is equal to each other).

  The holder 430 can move up and down in the suction table 410. Accordingly, each push-up pin 420 can be protruded from the upper surface of the suction table 410 or can be retracted below the upper surface of the suction table 410.

  Although not shown, in the pick-up process, as described above, the outer peripheral portion of the laminated body 8 is supported by the wafer ring 9, and the wafer ring 9 is fixed to a table (not shown). This table is movable so that the individual piece 83 to be picked up is positioned on the suction stand 410 when viewed from above in the vertical direction. That is, the suction stand 410 moves relatively according to the position corresponding to the piece 83 to be picked up when viewed from above in the vertical direction. Thereby, a plurality of pieces 83 can be selectively pushed up and picked up by the push-up pins 420 one by one.

  The collet 260 is configured so as to be able to suck a piece 83 to be picked up (a piece 83 located on the suction stand 410 when viewed from above in the vertical direction).

Such a collet 260 is supported by the apparatus main body 280.
The apparatus main body 280 is configured to be able to move the collet 260 up and down in the vertical direction and to move the collet 260 from above the suction table 410 to the insulating substrate 5. Thereby, the piece 83 positioned above the suction table 410 can be sucked by the collet 260 and the piece 83 can be transferred onto the insulating substrate 5 in the sucked state.

  In such a die bonder 250, the piece 83 is pushed upward through the support film 4 by the plurality of push-up pins 420 while the support film 4 is sucked and fixed to the suction stand 410. In synchronization with this, the collet 260 is lowered to adsorb the individual piece 83 to the collet 260, and in this adsorbed state, the collet 260 is moved upward in the vertical direction. The film is picked up by causing peeling at the interface between the first adhesive layer and the first adhesive layer.

  At this time, when the support film 4 is pushed up by the plurality of push-up pins 420 as described above, as shown in FIG. ) Locally in the thickness direction. Moreover, as described above, the support film 4 has a rigidity of 40 N or more and 1,000 N or less and a thickness of 100 μm or less, so that the amount of local deformation can be increased. Therefore, by pushing up the support film 4 with a plurality of push-up pins 420, a gap S is likely to occur at the interface (interface between the adhesive layer 3 and the first adhesive layer 1) to be peeled off of the semiconductor film 10 (that is, adhesion). The contact area between the layer 3 and the first adhesive layer 1 is reduced), and the pickup property can be improved. Thereby, even if the adhesiveness of the adhesive layer 3 or the like is increased, the pickup can be performed satisfactorily. In addition, since the adhesiveness of the adhesive layer 3 and the like can be increased, so-called chip jumping can be prevented during dicing, and the dicing property can be improved.

  Note that the reason why the interface between the adhesive layer 31 and the first adhesive layer 1 is selectively peeled during such pickup is that the adhesiveness of the second adhesive layer 2 is the first adhesive layer 1 as described above. Therefore, the adhesive force at the interface between the support film 4 and the second adhesive layer 2 and the adhesive force at the interface between the second adhesive layer 2 and the first adhesive layer 1 are the same as those of the first adhesive layer 1. This is because the adhesive strength with the adhesive layer 3 is greater. That is, when the semiconductor element 71 is picked up, the interface between the first adhesive layer 1 and the adhesive layer 3 having the smallest adhesion among these three locations is selectively peeled off.

  Since the support film 4 after being pushed up by the plurality of push-up pins 420 has a large amount of local deformation as described above, the contact point (the pushed-up portion 43 of each push-up pin 420 in the support film 4 is large. The plastic deformation is partly centered around the center. That is, as shown in FIG. 7A, a circular push-up mark 43 a that is plastically deformed around the contact point of each push-up pin 420 is formed on the support film 4 that has been pushed up by the plurality of push-up pins 420. The area of the pushing mark 43a is relatively large.

  Here, in order to realize the good pickup property as described above, the area of one piece 83 in plan view (the area in plan view of the semiconductor element 71) is A, and the piece of the support film 4 is concerned. When the area (total area) in plan view of the plurality of push-up marks 43a formed in the region corresponding to the piece 83 is B, B / A is preferably 0.5 to 15%. It is more preferably ˜12%, and further preferably 2 to 10%. When the length in plan view of one piece 83 is L and the width in plan view of one piece 83 is W, the area A in plan view of one piece 83 is W × L.

  In the support film 4 having such an area ratio B / A within the above range, the portion of the support film 4 in contact with the push-up pins 420 and the vicinity thereof are greatly deformed in the thickness direction during the pickup as described above. It can be seen that (the amount of deformation in the thickness direction is large).

  In addition, when the number of push-up pins 420 is large in the pickup as described above, the push-pins 420 per push-up pin 420 in the thickness direction of the support film 4 as described above are more than when the number of push-up pins 420 is small. Even if the amount of deformation is small, good pick-up property can be realized.

  Specifically, for example, when the support film 4 is partially deformed in the thickness direction by the push-up of one push-up pin 420, the gap S as described above is formed around the push-up pin 420 in a plan view. The Since the gap S is formed between the conical shape on the lower surface of the adhesive layer 3 and the conical shape on the upper surface of the first adhesive layer 1 with the push-up pin 420 as the center, the adhesive layer 3 and the first adhesive in the gap S are formed. The distance to the layer 1 becomes a maximum value on the circumference of a fixed distance centered on the push-up pin 420, and decreases as the distance from the circumference increases (see FIG. 11). Therefore, when the number of the push-up pins 420 is small, it is necessary to increase the area in plan view of the gap S formed per one push-up pin 420. That is, when the number of push-up pins 420 is small, it is necessary to increase the area of one push-up mark 43a.

  On the other hand, when the number of the push-up pins 420 is large, the distance between the push-up pins 420 is small, and the area of the gap S formed per one push-up pin 420 in a plan view can be reduced. Therefore, when the number of the push-up pins 420 is large, the amount of deformation in the thickness direction of the support film 4 as described above per one push-up pin 420 may be smaller than when the number of the push-up pins 420 is small. . That is, when the number of push-up pins 420 is large, the area of one push-up mark 43a can be reduced.

  For this reason, by setting the ratio B / A of the total area B of the plurality of push-up marks 43a to the area A of the piece 83 regardless of the number of the push-up pins 420 within the above-described range, the gap S can be suitably formed, and excellent pick-up properties as described above can be realized.

  On the other hand, for example, in the laminate 108 in which the semiconductor film 110 using the support film 104 having a rigidity higher than 1,000 N is attached to the semiconductor wafer 7, the support film 104 is formed as shown in FIG. When the plurality of push-up pins 420 are pushed up, since the rigidity of the support film 104 is relatively high, the portion of the support film 104 that is pushed up by each push-up pin 420 is hardly deformed or deformed. The amount of deformation is extremely small. Therefore, the support film 104 is lifted against the suction force from the suction table 410 without being locally deformed. For this reason, even if the support film 104 is pushed up by the plurality of push-up pins 420, the gap S ′ is hardly generated at the interface (the interface between the adhesive layer 3 and the first adhesive layer 1) to be peeled off of the semiconductor film 110. Even if the gap S ′ is formed, the area in plan view is small (that is, the contact area between the adhesive layer 3 and the first adhesive layer 1 remains large), and improvement in pickup performance cannot be expected.

  Since the support film 104 after being pushed up by the plurality of push-up pins 420 has a small deformation amount (deformation amount in the thickness direction), the support film 104 is pushed up by the push-up pins 420 in the support film 104. The portion 1043 is hardly plastically deformed. That is, as shown in FIG. 7B, the pushing film 1043 a having a relatively small area is only formed on the support film 104 pushed up by the plurality of pushing pins 420.

  The area ratio B / A as described above is measured for the support film after picking up using a die bonder (AD898 manufactured by ASM). Specifically, the ratio B / A is as follows: the temperature is 23 ° C. (room temperature), the push-up speed (rise speed) of each push-up pin 420 is 46.8 mm / sec, and the push-up amount of each push-up pin 420 (the upper surface of the suction stand 410) (Projection amount from the suction surface) is 0.3 mm, the shaft diameter of each push pin 420 is 0.7 mm, the taper angle of the tip of each push pin 420 is 15 °, and the diameter of the tip surface of each push pin is 0.2 mm. Measured with respect to the support film after pickup under the condition that the radius of curvature of the tip surface of each push-up pin 420 is 0.125 mm and the suction force (degree of vacuum) of the suction table 410 is −80 kPa. It is.

  In the actual pick-up process, the push-up speed (rise speed) of the plurality of push-up pins 420 is preferably 1 to 100 mm / sec, and more preferably 5 to 50 mm / sec. By setting the push-up speed within the above range, it is possible to efficiently pick up the pieces 83 while preventing the semiconductor element 71 from being damaged. On the other hand, when the push-up speed is less than the lower limit value, it takes a long time to pick up one piece 83, or the push-up amount of the push-up pin 420 cannot be made sufficient. There may be a case where improvement of pick-up property by the push-up pin 420 cannot be expected. On the other hand, when the push-up speed exceeds the upper limit, the push-up pin 420 breaks through the support film 4 depending on the thickness, elastic modulus, push-up amount of the push-up pin 420, tip shape, etc. There is a risk of damage.

  Further, the push-up amount of each push-up pin 420 (projection length from the upper surface of the suction stand 410) is preferably 0.1 mm or more and 2 mm or less, and more preferably 0.1 mm or more and 1 mm or less. By setting the push-up amount within the above range, it is possible to efficiently pick up the pieces 83 while preventing the semiconductor element 71 from being damaged. On the other hand, when the push-up amount is less than the lower limit value, the deformation amount in the partial thickness direction of the support film 4 due to the push-up of the push-up pin 420 as described above is small, and improvement in pick-up property cannot be expected. There is a case. On the other hand, when the push-up amount exceeds the upper limit value, the push-up pin 420 breaks through the support film 4 depending on the thickness, elastic modulus, push-up speed of the push-up pin 420, tip shape, etc. There is a risk of damage.

  In the present embodiment, the tip shape of each push-up pin 420 is a tapered shape with a tip portion tapered, and the taper angle is not particularly limited, but is about 10 to 30 °. In addition, the shape of the front-end | tip part of each pushing-up pin 420 is not limited to what was mentioned above.

  Further, a tip surface convexly curved toward the tip side with a predetermined radius of curvature is formed at the tip of each push-up pin 420. The curvature radius is not particularly limited, but is about 0.05 to 0.5 mm.

  The shaft diameter of each push-up pin 420 (the diameter on the proximal end side of the tapered tip portion) is not particularly limited, and is, for example, about 1 mm or more and 5 mm or less.

  Further, the suction force (degree of vacuum) of the suction table 410 is not particularly limited, but is about −90 kPa or more and −60 kPa or less. When the suction force (degree of vacuum) exceeds the upper limit value, the support film 4 is lifted from the suction table 410 by the push-up pin 420 being pushed up, causing the deformation of the support film 4 and the formation of the gap S as described above. It may not be possible. On the other hand, when the adsorption force (degree of vacuum) is less than the lower limit, the apparatus becomes large and there is no particular advantage.

[4]
[4-1] On the other hand, the insulating substrate 5 for mounting (mounting) the semiconductor element 71 (chip) is prepared.

  Examples of the insulating substrate 5 include an insulating substrate on which a semiconductor element 71 is mounted and wiring and terminals for electrically connecting the semiconductor element 71 and the outside are provided.

Specifically, flexible substrates such as polyester copper-clad film substrates, polyimide copper-clad film substrates, aramid copper-clad film substrates, glass-based copper-clad laminates such as glass cloth and epoxy copper-clad laminates, and glass nonwoven fabrics -Composite copper-clad laminates such as epoxy copper-clad laminates, heat-resistant and thermoplastic substrates such as polyetherimide resin substrates, polyetherketone resin substrates, polysulfone resin substrates, alumina substrates, aluminum nitride substrates And ceramic substrates such as silicon carbide substrates, bismaleimide-triazine (BT) substrates, and the like.
Instead of the insulating substrate 5, a lead frame or the like may be used.

  Next, as shown in FIG. 3 (f), the picked up pieces 83 are placed on the insulating substrate 5 by the die bonder 250 described above.

  Then, the pieces 83 are bonded to the insulating substrate 5 by pressing the pieces 83 to the insulating substrate 5 while being heated by the heater 270 (see FIG. 3F).

  [4-2] Next, as shown in FIG. 8G, the pieces 83 placed on the insulating substrate 5 are heated and pressure-bonded. As a result, the semiconductor element 71 and the insulating substrate 5 are bonded (die bonding) via the adhesive layer 31 (fourth step).

  As conditions for heating and pressure bonding, for example, the heating temperature is preferably about 100 to 300 ° C, and more preferably about 100 to 200 ° C. Further, the pressure bonding time is preferably about 1 to 10 seconds, and more preferably about 1 to 5 seconds.

  Moreover, you may heat-process after that. The heating conditions in this case are such that the heating temperature is preferably about 100 to 300 ° C., more preferably about 150 to 250 ° C., and the heating time is preferably about 1 to 240 minutes, more preferably about 10 to 60 minutes. The

  Thereafter, a terminal (not shown) of the semiconductor element 71 and a terminal (not shown) on the insulating substrate 5 are electrically connected by a wire 84. For this connection, instead of the wire 84, a conductive paste, a conductive film, or the like may be used.

  Then, the individual pieces 83 and the wires 84 placed on the insulating substrate 5 are covered with a resin material to form a mold layer 85. Examples of the resin material constituting the mold layer 85 include various mold resins such as an epoxy resin.

  Further, a semiconductor device as shown in FIG. 8 (h) in which a semiconductor element 71 is accommodated in a package by bonding a ball-shaped electrode 86 to a terminal (not shown) provided on the lower surface of the insulating substrate 5. 100 is obtained.

  According to the method as described above, in the third step, the adhesive layer 31 is picked up in the state where the adhesive layer 31 is attached to the semiconductor element 71, that is, in the state of the piece 83. Can be used for bonding to the insulating substrate 5 as they are. For this reason, it is not necessary to separately prepare an adhesive or the like, and the manufacturing efficiency of the semiconductor device 100 can be further increased.

  In particular, since the rigidity and thickness of the support film 4 are optimized as described above, the support film 4 can be partially deformed in the thickness direction by pushing up the push-up pins 420 in the pickup process. Therefore, the pickup property can be improved. Thereby, even if the adhesiveness of the adhesive layer 3 or the like is increased, the pickup can be performed satisfactorily. In addition, since the adhesiveness of the adhesive layer 3 and the like can be increased, so-called chip jumping can be prevented during dicing, and the dicing property can be improved.

Second Embodiment
Next, a second embodiment of the semiconductor film of the present invention and the semiconductor device manufacturing method of the present invention will be described.

  FIG. 9 is a view (longitudinal sectional view) for explaining a film for semiconductor and a method for manufacturing a semiconductor device (mainly a dicing step) according to the second embodiment of the present invention. In the following description, the upper side in FIG. 9 is referred to as “upper” and the lower side is referred to as “lower”.

  Hereinafter, although the second embodiment will be described, the description will focus on the differences from the first embodiment, and the description of the same matters will be omitted. In FIG. 9, components similar to those in the first embodiment are denoted by the same reference numerals as those in FIG.

  The semiconductor film 10 ′ according to this embodiment is the same as that of the first embodiment except that the layer configuration of the adhesive layer is different.

  That is, in the semiconductor film 10 ′ shown in FIG. 9, the first adhesive layer 1 is omitted and only one layer of the second adhesive layer 2 is provided.

  In manufacturing such a semiconductor film 10 ′, ultraviolet rays are irradiated in advance on a region of the upper surface of the second adhesive layer 2 that is in contact with the adhesive layer 3 (region where the semiconductor wafer 7 is laminated). Thereby, the adhesiveness of this area | region is deactivated, As a result, the adhesive force of the 2nd adhesion layer 2 and the contact bonding layer 3 falls. As a result, when picking up the individual piece 83 in the third step, the individual piece 83 can be picked up without applying a large load, so that the pickup performance can be improved.

  On the other hand, in the upper surface of the second pressure-sensitive adhesive layer 2, the region not in contact with the adhesive layer 3 is not irradiated with ultraviolet rays, so that the original pressure-sensitive adhesive force of the second pressure-sensitive adhesive layer 2 is maintained in this region. For this reason, the adhesive force between the second adhesive layer 2 and the wafer ring 9 is also maintained, and the dicing performance is prevented from being lowered.

  In other words, in the first embodiment, by using two adhesive layers having different adhesive properties, both dicing properties and pickup properties are achieved, but in the present embodiment, one of the second adhesive layers 2 is provided. By reducing the adhesiveness only in the partial region, both the dicing property and the pickup property are compatible even with a single adhesive layer.

  Such a semiconductor film 10 ′ is laminated with a semiconductor wafer 7 as shown in FIG. 9A to obtain a laminated body 8 ′.

  Next, as shown in FIG. 9B, a plurality of cuts 81 are formed in the stacked body 8 'using a dicing blade 82 (dicing).

  Thereafter, as in the first embodiment described above, the semiconductor device is obtained by performing the third step and the fourth step.

  In addition, as an ultraviolet-ray irradiated to the 2nd adhesion layer 2, Preferably a thing with a wavelength of about 100-400 nm is used, More preferably, a thing with a wavelength of about 200-380 nm is used. Further, the irradiation time of ultraviolet rays is preferably about 10 seconds to 1 hour, more preferably about 30 seconds to 30 minutes, although it depends on the wavelength and power. According to such ultraviolet rays, the chemical structure in the second adhesive layer 2 is changed, the adhesiveness is efficiently deactivated, and the adhesiveness of the second adhesive layer 2 is prevented from being lowered more than necessary. can do.

  Moreover, what irradiates the 2nd adhesion layer 2 is not restricted to an ultraviolet-ray, Various radiations, such as an electron beam and an X-ray, may be sufficient.

  In addition, irradiation of an ultraviolet-ray is not restricted to the case where it irradiates with respect to the area | region which contact | connects the contact bonding layer 3 among the upper surfaces of the 2nd adhesion layer 2 like this embodiment. For example, when the constituent material of the second adhesive layer 2 is a material that cures in response to ultraviolet rays, the second adhesive layer 2 and the adhesive layer are laminated after the second adhesive layer 2 and the adhesive layer 3 are laminated. 3 and the semiconductor wafer 7 are laminated, or the second adhesive layer 2, the adhesive layer 3 and the semiconductor wafer 7 are laminated and the semiconductor wafer 7 is diced. Good. In such a case, since the 2nd adhesion layer 2 hardens | cures with irradiation of an ultraviolet-ray, the adhesive force of the 2nd adhesion layer 2 located in an irradiation area | region falls. As a result, even in such a case, the pickup performance of the individual piece 83 can be improved.

  As mentioned above, although the film for semiconductors of this invention and the manufacturing method of a semiconductor device were demonstrated based on embodiment of illustration, this invention is not limited to these.

  For example, the package form is a CSP (Chip Size Package) such as BGA (Ball Grid Array) or LGA (Land Grid Array), a surface mount type package such as TCP (Tape Carrier Package), or DIP (Dual Inline Package). Further, it may be an insertion type package such as PGA (Pin Grid Array), and is not particularly limited.

  In each of the above embodiments, the case where the piece 83 is mounted on the insulating substrate 5 has been described. However, the piece 83 may be mounted on another semiconductor element. That is, the method for manufacturing a semiconductor device of the present invention can also be applied to manufacturing a chip stack type semiconductor device in which a plurality of semiconductor elements are stacked. Thereby, there is no possibility of pick-up failure or the possibility of chips entering between the semiconductor elements, and a highly reliable chip stack type semiconductor device can be manufactured with a high manufacturing yield.

  Moreover, in the method for manufacturing a semiconductor device of the present invention, an optional step can be added as necessary.

Hereinafter, specific examples of the present invention will be described.
1. Manufacturing of a semiconductor device (Example 1)
<1> Formation of First Adhesive Layer 100 parts by mass of a copolymer having a weight average molecular weight of 300,000 obtained by copolymerizing 30% by mass of 2-ethylhexyl acrylate and 70% by mass of vinyl acetate, and a molecular weight of 700 Peeling treatment of 45 parts by mass of pentafunctional acrylate monomer, 5 parts by mass of 2,2-dimethoxy-2-phenylacetophenone, and 3 parts by mass of tolylene diisocyanate (Coronate T-100, manufactured by Nippon Polyurethane Industry Co., Ltd.) It apply | coated so that the thickness after drying might be set to 30 micrometers with respect to the polyethylene-terephthalate film of thickness 38 micrometers, and it dried at 80 degreeC after that for 5 minutes. And the ultraviolet-ray 500mJ / cm < ² > was irradiated with respect to the obtained coating film, and the 1st adhesion layer was formed into a film on the polyethylene terephthalate film.

<2> Formation of Second Adhesive Layer Polypropylene (F327, manufactured by Prime Polymer Co., Ltd.) and styrene / isoprene copolymer (7125, manufactured by Kuraray Co., Ltd.) are dry blended as a support film in a ratio of 80:20. After mixing, sheeting is performed at a 50 mm full flight extruder (L / D = 25, compression ratio = 2.9, effective length = 1245 mm), discharge = 30 kg / hour, resin temperature = 210 ° C. (screw tip), A polypropylene sheet having a thickness of 80 μm was obtained. Here, the support film had a strip-shaped test piece cut out with a width of 10 mm and a length of 100 mm, the rigidity at 23 ° C. (room temperature) was 105 N, and the bending rigidity was 0.056 N · mm ² . Further, 100 parts by mass of a copolymer having a weight average molecular weight of 500,000 obtained by copolymerizing 70% by mass of butyl acrylate and 30% by mass of 2-ethylhexyl acrylate, and tolylene diisocyanate (Coronate T-100, 3 parts by mass of Nippon Polyurethane Industry Co., Ltd.) was applied to a 38 μm-thick polyethylene terephthalate film that had been peeled off so that the thickness after drying was 10 μm, and then dried at 80 ° C. for 5 minutes. Then, a second adhesive layer was formed on the polyethylene terephthalate film. Thereafter, a support film was laminated on the second adhesive layer on the polyethylene terephthalate film.

<3> Formation of Adhesive Layer Acrylate ester copolymer (ethyl acrylate-butyl acrylate-acrylonitrile-acrylic acid-hydroxyethyl methacrylate copolymer methyl ethyl ketone (MEK) dissolved product, manufactured by Nagase ChemteX Corporation, SG-708 −6, Tg: 6 ° C., weight average molecular weight: 500,000) 100 parts by mass and phenoxy resin (JER1256, weight average molecular weight: 50,000, manufactured by Mitsubishi Chemical Corporation) 9.8 parts by mass , 90.8 parts by mass of spherical silica (SC1050, average particle size: 0.3 μm, manufactured by Admatechs) added as a filler, and γ-glycidoxypropyltrimethoxysilane (as a coupling agent) KBM403E (Shin-Etsu Chemical Co., Ltd.) 1.1 parts by mass and phenol resin (PR 53647, hydroxyl equivalent 104 g / OH group, and Sumitomo Bakelite Co., Ltd.) 0.1 parts by weight, and dissolved in methyl ethyl ketone to obtain a resin solid content of 20% by weight of the resin varnish.

  Next, the obtained resin varnish was applied to a polyethylene terephthalate film (manufactured by Teijin DuPont Films Co., Ltd., product number Purex A43, thickness 38 μm) with a comma coater, and then dried at a temperature of 150 ° C. for 3 minutes. An adhesive layer having a thickness of 20 μm was formed on the terephthalate film.

<4> Manufacture of a film for semiconductor A film in which a first adhesive layer is formed and a film in which an adhesive layer is formed are laminated (laminated) so that the first adhesive layer and the adhesive layer are in contact with each other. The layer-side polyethylene terephthalate film was peeled off to obtain a laminate.

  Next, using a roll-shaped die, the first adhesive layer and the adhesive layer are punched out to be larger than the outer diameter of the semiconductor wafer and smaller than the inner diameter of the wafer ring, and then unnecessary portions are removed, and the second laminated body is removed. Got.

  Further, the polyethylene terephthalate film on one surface side of the second adhesive layer was peeled off. And these were laminated | stacked so that the 1st adhesion layer and 2nd adhesion layer of a said 2nd laminated body might contact | connect. Thereby, the film for semiconductors obtained by laminating five layers of the polypropylene-based sheet (support film), the second adhesive layer, the first adhesive layer, the adhesive layer, and the polyethylene terephthalate film in this order was obtained.

<5> Manufacturing of Semiconductor Device Next, a silicon wafer having a thickness of 100 μm and 8 inches was prepared.

  And the polyethylene terephthalate film was peeled from the film for semiconductors, and the silicon wafer was laminated | stacked at 60 degreeC on the peeling surface. Thereby, the laminated body formed by laminating | stacking 5 layers of a polypropylene-type sheet | seat (support film), a 2nd adhesion layer, a 1st adhesion layer, an adhesion layer, and a silicon wafer in this order was obtained.

  Next, the laminate was diced (cut) from the silicon wafer side using a dicing saw (DFD6360, manufactured by DISCO Corporation) under the following conditions. As a result, the silicon wafer was singulated, and a semiconductor element having the following dicing size was obtained.

<Dicing conditions>
・ Dicing size: 10 mm × 10 mm square ・ Dicing speed: 50 mm / sec
・ Spindle speed: 40,000 rpm
・ Z1 axis blade height: 0.140mm
・ Z2 axis blade height: 0.105mm

  The Z1 axis and Z2 axis blade height are the positions in the Z axis direction of the blade with the work table upper surface = the lower surface of the support film as the reference point (zero point) when dicing in two stages. Is the position in the Z-axis direction during the first cut, and the Z2-axis blade height is the position in the Z-axis direction during the second cut. The notch formed by this dicing had its tip reaching the first adhesive layer.

  Next, using a die bonder (AD898, manufactured by ASM), one of the semiconductor elements was pushed up from the back surface of the semiconductor film with a push-up pin, and the surface of the pushed-up semiconductor element was pulled upward while adsorbing with the collet of the die bonder. As a result, individual pieces of the semiconductor element and the adhesive layer were picked up.

  Here, the die bonder has a push-up device provided with a suction stand and five push-up pins as shown in FIGS. 4 and 5, and the four push-up pins corresponding to the four corners of each piece are individually provided. The push-up pins corresponding to the center of the individual piece are arranged so as to push up with respect to the center of the individual piece. Further, in the pickup using the die bonder, the push-up speed (rise speed) of each push-up pin is 46.8 mm / sec, and the push-up amount of each push-up pin (the protrusion amount from the upper surface (suction face) of the suction stand 410) is 0. .3 mm, the shaft diameter of each push-up pin 420 is 0.7 mm, the taper angle of the tip of each push-up pin 420 is 15 °, the diameter of the tip face of each push-up pin is 0.2 mm, the radius of curvature of the tip face of each push-up pin 420 Was 0.125 mm, and the adsorption power (vacuum degree) of the adsorption table 410 was −80 kPa.

  Next, the picked-up pieces are applied to a bismaleimide-triazine resin substrate (circuit level difference: 5 to 10 μm) coated with a solder resist (manufactured by Taiyo Ink Manufacturing Co., Ltd., trade name: AUS308) at a temperature of 130 ° C. and a load of 5 N. For 1.0 second and die bonded.

Next, the semiconductor element and the resin substrate were electrically connected by wire bonding.
Then, the semiconductor element and the bonding wire on the resin substrate were sealed with a sealing resin EME-G760 and subjected to a heat treatment at a temperature of 175 ° C. for 2 hours. Thereby, the sealing resin was cured to obtain a semiconductor device. In this example, ten such semiconductor devices were manufactured.

(Example 2)
A semiconductor device was manufactured in the same manner as in Example 1 except that the thickness of the support film was 100 μm. Here, the support film had a strip-like test piece cut out with a width of 10 mm and a length of 100 mm, the rigidity at 23 ° C. (room temperature) was 132 N, and the bending rigidity at 23 ° C. (room temperature) was 0.110 N · mm ^2. It was.

(Example 3)
A semiconductor device was manufactured in the same manner as in Example 1 except that the support film was a sheet made of polypropylene (trade name: 40RL-01Z, manufactured by Oji Paper Co., Ltd.) and the thickness of the support film was 40 μm. Here, the support film had a strip-shaped test piece cut out with a width of 10 mm and a length of 100 mm, the rigidity at 23 ° C. (room temperature) was 300 N, and the bending rigidity at 23 ° C. (room temperature) was 0.040 N · mm ^2. It was.

Example 4
A semiconductor device was manufactured in the same manner as in Example 1 except that the supporting film was a polyethylene sheet (product name: DDZ, manufactured by Gunze Co., Ltd.) and the thickness was 90 μm. Here, the support film had a strip-shaped test piece cut out with a width of 10 mm and a length of 100 mm, the rigidity at 23 ° C. (room temperature) was 71 N, and the bending rigidity at 23 ° C. (room temperature) was 0.048 N · mm ^2. It was.

(Comparative example)
A semiconductor device was manufactured in the same manner as in Example 1 except that a 75 μm-thick polyimide film was used as the support film. Here, the support film has a strip-shaped test piece cut out with a width of 10 mm and a length of 100 mm, the rigidity at 23 ° C. (room temperature) is 2,400 N, and the bending rigidity at 23 ° C. (room temperature) is 1.13 N · mm ^2. Met.

2. Evaluation In each example and comparative example, a semiconductor wafer was singulated to produce 100 semiconductor elements, and when picked up, the presence or absence of defects in each semiconductor element was observed, and dicing was performed according to the following evaluation criteria. And pickup properties were evaluated. In the evaluation of dicing properties, as the above problems, the chipping and cracking of the semiconductor element after dicing and before picking up, and the presence or absence of peeling (chip jumping) of the semiconductor element during dicing were observed. In evaluating the pickup property, the semiconductor element after pickup was observed for chipping and cracking.

<Evaluation criteria for dicing properties>
◎: The number of semiconductor elements containing defects is less than 3 ○: The number of semiconductor elements containing defects is 3 or more and less than 6 △: The number of semiconductor elements containing defects is 6 or more and less than 10 ×: Includes defects 10 or more semiconductor elements

<Evaluation criteria for pickup properties>
◎: The number of semiconductor elements containing defects is less than 3 ○: The number of semiconductor elements containing defects is 3 or more and less than 6 △: The number of semiconductor elements containing defects is 6 or more and less than 10 ×: Includes defects 10 or more semiconductor elements

  These evaluation results are shown in Table 1. In Table 1, each example and comparative example was formed in a region corresponding to the semiconductor element of the support film after picking up with respect to the area A in plan view of one semiconductor element (piece). The ratio B / A of the area B in plan view of the push-up trace is also shown. In Table 1, “PP” represents polypyropylene, “S · IR” represents a styrene / isoprene copolymer, “PP + S · IR” represents a blend of polypyropylene and styrene / isoprene copolymer, “PE” indicates polyethylene, and “PI” indicates polyimide.

As can be seen from Table 1, in each of the examples, good results were obtained for both the dicing property and the pickup property. In addition, as shown in FIG. 10A, the support film after the pick-up process in Example 1 had a relatively large push-up mark having a diameter (D) of about 1.2 mm by the push-up of the push-up pin. Therefore, in Example 1, B / A was (5 × π × (0.6) ² ) / (10 × 10) = 5.63 [%].

On the other hand, in the comparative example, the results satisfying both the dicing property and the pickup property could not be obtained for each example. Moreover, as shown in FIG.10 (b), the support film after the pick-up process in a comparative example formed the comparatively small pushing mark with a diameter (D ') of about 0.3 mm by pushing up of a pushing pin. Therefore, in the comparative example, B / A was (5 × π × (0.15) ² ) / (10 × 10) = 0.40 [%].

DESCRIPTION OF SYMBOLS 1 1st adhesion layer 2 2nd adhesion layer 3 Adhesion layer 4 Support film 4a Base material 4b Base material 5 Insulating substrate 7 Semiconductor wafer 8, 8 'Laminated body 9 Wafer ring 10, 10' Semiconductor film 11 Outer periphery 21 Outer peripheral part 31 Adhesive layer 41 Outer peripheral portion 43 Pushed up portion 43a Pushed up trace 61 Laminated body 62 Laminated body 63 Laminated body 64 Laminated body 71 Semiconductor element 81 Notch 82 Dicing blade 83 Piece 84 Wire 85 Mold layer 86 Ball electrode 100 Semiconductor device 104 Support film 108 Laminate 110 Semiconductor film 250 Dibonder 260 Collet 270 Heater 280 Device main body 302 Dicer table 400 Push-up device 410 Suction table 410a Hollow portion 411 Groove 412 Suction hole 413 Suction hole 414 Suction hole 415 Suction hole 420 Push-up pin 420a to 20e thrust pins 430 holder 1043 push-up was part 1043a push-up mark D, D 'diameter S, S' gap

Claims (9)

The adhesive layer, the adhesive layer, and the support film are laminated in this order, and a semiconductor wafer is attached to the surface of the adhesive layer opposite to the support film, and in this state, the semiconductor wafer and the adhesive layer are attached. singulation by cutting and deforming the support film and the adhesive layer while the push-up by a plurality of push-up pins resulting pieces through the support film and the adhesive layer, the support film and the adhesive layer A semiconductor film used for picking up from
The pressure-sensitive adhesive layer has an average thickness thinner than the average thickness of the support film, and a first pressure-sensitive adhesive layer in contact with the adhesive layer and a surface of the first pressure-sensitive adhesive layer opposite to the adhesive layer. A second adhesive layer having a higher adhesiveness than the first adhesive layer,
The average thickness of the support film is 100 μm or less, and
The support film has a rigidity at 23 ° C. of 40 N or more and 1,000 N or less,
The support fill arm is pushed up marks were partially plastic deformation around the contact points between the respective thrust pins by push-up of the thrust pins are respectively formed,
The first adhesive layer and the second adhesive layer are deformed following plastic deformation of the support film, and the deformed portion is in contact with the adhesive layer .   The film for a semiconductor according to claim 1, wherein the adhesive force of the first adhesive layer to the adhesive layer is smaller than the adhesive force of the adhesive layer to the semiconductor wafer. The adhesion of the first adhesive layer and said second adhesive layer to the support film, a semiconductor film according to claim 1 or 2 larger than the adhesion force of the first adhesive layer to the adhesive layer. The film for semiconductor according to claim 1, wherein the support film has a bending rigidity at 23 ° C. of 0.25 N · mm ² or less.   The film for a semiconductor according to any one of claims 1 to 4, wherein the support film has a tensile elastic modulus at 23 ° C of 50 to 3,000 MPa.   When the area in plan view of one piece is A, and B is the area in plan view of the push-up mark formed in the region corresponding to the piece of the support film, B / A is The film for a semiconductor according to claim 1, which is 1 to 15%.   The film for semiconductor according to claim 1, wherein the glass transition temperature of the support film is −25 ° C. or higher and 120 ° C. or lower. Attaching the surface of the adhesive film side of the semiconductor film according to claim 1 to a semiconductor wafer to obtain a laminate; and
Cutting the semiconductor wafer into pieces by forming a cut in the laminate from the semiconductor wafer side; and
And a step of picking up the obtained piece through the support film by a plurality of push-up pins and picking up the piece from the support film.   The method of manufacturing a semiconductor device according to claim 8, wherein a surface opposite to the adhesive layer of the support film is sucked and fixed during the pickup.

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