JP5736770B2 - LED substrate, method of manufacturing the same, and semiconductor device - Google Patents

Description

  The present invention relates to an LED substrate on which an LED element is mounted, a manufacturing method thereof, and a semiconductor device on which the LED element is mounted.

  2. Description of the Related Art In recent years, a semiconductor device in which an LED (light emitting diode) element is mounted on a substrate is used for a backlight of a display device, display lamps of various electric devices and electronic devices, in-vehicle lighting, general lighting, and the like. In such a semiconductor device, an electrode is generally formed on a heat-dissipating substrate such as a copper substrate through an electrical insulating layer, an LED element is mounted on the electrode, bonded, and then sealed with a translucent resin. It has a stopped structure. In addition, in order to increase the utilization efficiency of light emission from the LED element, the electrode on which the LED element is mounted is also used as a reflector, and in order to increase the reflectance, a silver plating layer is formed on the electrode, or the electrode itself is Forming with a silver plating layer is performed (patent document 1).

JP 2006-245032 A

The resin used for sealing the semiconductor device as described above is exposed to intense light when heating the semiconductor device during reflow soldering or using a high-intensity LED as the LED element. For this reason, it is required to be a resin material that is unlikely to cause discoloration or translucency due to heat or light, and the use of silicone resins as sealing resins having such resistance is advancing. However, the silicone resin has low gas barrier properties, and corrosive gases such as oxygen and hydrogen sulfide in the air may penetrate into the silver plating layer of the reflector. When such a corrosive gas comes into contact with the silver plating layer, there is a problem that the silver plating layer is discolored and the reflectance is remarkably lowered.
The present invention has been made in view of the above-described circumstances, and includes an LED substrate having a reflection layer having excellent resistance to corrosive gas and having a good reflectance, a manufacturing method thereof, and an LED element. An object of the present invention is to provide a semiconductor device including a reflective layer that stably maintains a high reflectance with respect to light emission.

In order to achieve such an object, the LED substrate of the present invention includes a base material and a reflective layer located in a desired region of the base material, and the reflective layer includes a silver plating layer and the silver plating layer. And a protective layer that covers the silver-plated layer in this order and a layer containing tin or a tin compound and a layer containing chromium or a chromium compound. did.

As another aspect of the present invention, the reflective layer is configured to have a base plating layer on the substrate side.
As another aspect of the present invention, the substrate has a plurality of LED mounting regions defined by multiple impositions, and the edges of the reflective layer are separated by a desired distance in each imposition. The configuration is such that at least one site exists.
As another aspect of the present invention, the base material has a through groove portion on each imposition, and the edge portion of the reflective layer is opposed to the through groove portion.

  Moreover, the manufacturing method of the board | substrate for LED of this invention makes the said silver plating layer contact the process which forms a silver plating layer in the desired area | region of a base material, a tin compound containing processing solution, and then a chromium compound containing processing solution. And a step of forming a thin layer containing tin or a tin compound and chromium or a chromium compound so as to cover the silver plating layer to form a protective layer.

As another aspect of the present invention, the reflective layer forming step includes a step of forming a base plating layer before the step of forming the silver plating layer.
As another aspect of the present invention, a plurality of LED mounting regions are defined on the base material by multiple impositions, and through grooves are formed in desired portions of each imposition, and in the reflective layer forming step, the penetration is performed for each imposition. The reflective layer is formed in a region separated via the groove.

The semiconductor device of the present invention includes a base material, a plurality of reflective layers that are located in a desired region of the base material and are electrically independent, and a single reflective layer or a plurality of reflective layers. A mounted LED element; a conductive portion that electrically connects the LED element and the desired reflective layer; and a sealing resin that seals the LED element and the conductive portion; and the reflective layer Has a silver plating layer and a protective layer covering the silver plating layer, and the protective layer includes a layer containing tin or a tin compound and a layer containing chromium or a chromium compound in this order on the silver plating layer. It was set as the structure laminated | stacked on .

As another aspect of the present invention, the reflective layer is configured to have a base plating layer on the substrate side.
As another aspect of the present invention, the base material is a metal base material, and the metal base material is divided so as to be electrically independent by a gap portion, and is formed in a desired region of each divided metal base material. The reflective layer is positioned.
As another aspect of the present invention, the sealing resin is a silicone resin.

In this invention, the reflective layer which comprises the board | substrate for LED has a silver plating layer and the specific protective layer which coat | covers this silver plating layer, and this protective layer is corrosiveness, such as oxygen and hydrogen sulfide in the air. Since it exhibits excellent resistance to gas and prevents corrosion of the silver plating layer by corrosive gas, etc., the substrate for LED has a reflection layer having excellent resistance to corrosive gas and having good reflectance. Is.
Moreover, in the manufacturing method of the substrate for LED of this invention, after forming a silver plating layer, since a specific protective layer is formed so that this silver plating layer may be coat | covered and it is set as a reflective layer, oxygen in the air, sulfide Resistance to corrosive gas such as hydrogen can be imparted to the reflective layer, and it is possible to manufacture an LED substrate having a reflective layer having excellent resistance to corrosive gas and the like and having a good reflectance.
Further, in the semiconductor device of the present invention, an LED element is mounted on a reflective layer having a silver plated layer and a specific protective layer covering the silver plated layer, and the silver plated layer constituting the reflective layer is: Since the protective layer prevents contact with corrosive gases such as oxygen and hydrogen sulfide in the air, even if the sealing resin is a resin with low gas barrier properties, corrosion of the silver plating layer is prevented. Therefore, the semiconductor device includes a reflective layer that stably maintains a high reflectance with respect to light emitted from the LED element.

It is a fragmentary sectional view showing one embodiment of a substrate for LED of the present invention. It is a fragmentary sectional view which shows other embodiment of the board | substrate for LED of this invention. It is a top view which shows the example of the board | substrate for LED divided by multiple attachment. It is an expanded sectional view in the II line of the board | substrate for LED shown by FIG. It is a top view which shows the other example of the board | substrate for LED divided by multiple attachment. It is an expanded sectional view in the II-II line of the board | substrate for LED shown by FIG. It is process drawing for demonstrating one Embodiment of the manufacturing method of this invention which used the board | substrate for LED shown by FIG. 3 and FIG. 4 as an example. It is a figure for demonstrating the method to manufacture the board | substrate for LED shown by FIG. 5 and FIG. It is a top view of one embodiment of a semiconductor device of the present invention. FIG. 10 is a cross-sectional view of the semiconductor device shown in FIG. 9 taken along the line III-III. It is sectional drawing of other embodiment of the semiconductor device of this invention. It is process drawing for demonstrating the manufacture example of the semiconductor device of this invention. It is sectional drawing of other embodiment of the semiconductor device of this invention. It is sectional drawing of other embodiment of the semiconductor device of this invention.

Hereinafter, embodiments of the present invention will be described with reference to the drawings.
[LED substrate]
FIG. 1 is a partial cross-sectional view showing an embodiment of an LED substrate of the present invention. In FIG. 1, an LED substrate 1 includes a base material 2 and a reflective layer 4 located on one surface of the base material 2. In the reflective layer 4, a silver plating layer 5 is located on the substrate 2 side, and a protective layer 6 is disposed so as to cover the silver plating layer 5.
FIG. 2 is a partial cross-sectional view showing another embodiment of the LED substrate of the present invention. In FIG. 2, the LED substrate 1 ′ includes a base material 2 and a reflective layer 4 ′ located on one surface of the base material 2. The reflective layer 4 ′ is formed by laminating a base plating layer 7, a silver plating layer 5, and a protective layer 6 from the substrate 2 side.
The base material 2 constituting the LED substrate 1, 1 'of the present invention may be a metal base material such as copper, copper alloy, 42 alloy (nickel 41% iron alloy), and the like. A composite substrate or the like in which a conductive material layer is provided on the surface of an electrically insulating substrate such as ceramics or glass can be used. In consideration of the heat dissipation of the substrate 2, a metal substrate is used. It is preferable. The thickness of the base material 2 can be set in consideration of the configuration of the semiconductor device manufactured using the LED substrate, and can be set, for example, in the range of 0.05 to 0.5 mm. it can.

The silver plating layer 5 constituting the LED substrates 1 and 1 ′ is a layer for reflecting light emitted from the mounted LED element, and as described later, corrosion due to corrosive gas or the like is prevented by the protective layer 6. Therefore, it may be a silver plating layer formed by ordinary electroplating. The thickness of such a silver plating layer can be set, for example in the range of 1-10 micrometers, Preferably it is 1-5 micrometers. In addition, the silver plating layer which consists of silver alloys containing other metals, such as tin, palladium, copper, gold | metal | money, indium, rhodium, zinc, may be sufficient as such a silver plating layer, for example. In this case, the content of the other metal forming the silver alloy can be set in consideration of the melting temperature, reflectivity, etc. of the silver alloy, and can be set, for example, in the range of 50% by weight or less.
The protective layer 6 constituting the LED substrates 1 and 1 ′ prevents corrosion of the silver plating layer 5 due to corrosive gas or the like. Such a protective layer is a layer containing chromium or a chromium compound, Alternatively, it can be a layer containing tin or a tin compound, or a layer containing chromium or a chromium compound and tin or a tin compound.
When the protective layer 6 is a layer containing chromium or a chromium compound, the thickness may be, for example, in the range of 1 to 15 nm, preferably 2 to 10 nm, and contains chromium in the surface analysis by Auger electron spectroscopy (AES). The amount can be 5 at% or more, preferably 10 to 30 at%. Examples of other elements in the chromium compound include carbon, oxygen, chlorine and the like, which are determined by the composition of the treatment solution used when forming the protective layer 6 described later.

Moreover, when the protective layer 6 is a layer containing tin or a tin compound, the thickness may be, for example, in the range of 5 to 20 nm, preferably 10 to 15 nm. Surface analysis by Auger electron spectroscopy (AES) The tin content can be 10 at% or more, preferably 15 to 40 at%. Examples of other elements in the tin compound include carbon, oxygen, chlorine and the like, and these are determined by the composition of the treatment solution used when forming the protective layer 6 described later.
Further, when the protective layer 6 is a layer containing chromium or a chromium compound and tin or a tin compound, the thickness may be, for example, in the range of 6 to 30 nm, preferably 10 to 20 nm, and Auger electron spectroscopy (AES). ), The tin content is 7 at% or more, preferably 10 to 30 at%, and the chromium content is 3 at% or more, preferably 5 to 15 at%. Examples of the other elements in the tin compound and the chromium compound include those described above, which are determined by the composition of the treatment solution used when forming the protective layer 6 described later.

When the thickness of the protective layer 6 is less than the above range, the action of preventing the corrosion of the silver plating layer 5 may be insufficient. When the thickness exceeds the above range, the light reflection of the silver plating layer 5 may occur. This is unfavorable because it may hinder the action and reduce the reflectivity of the reflective layer 4. Moreover, when the chromium content in the protective layer 6 and the tin content are below the above range, the action of preventing the corrosion of the silver plating layer 5 may be insufficient. The light reflection effect of the silver plating layer 5 is hindered, and the reflectance as the reflection layer 4 may be lowered, which is not preferable.
The base plating layer 7 constituting the LED substrate 1 ′ improves the adhesion between the base material 2 and the silver plating layer 5. For example, a copper plating layer formed by electroless plating or electroplating, nickel plating It can be a layer or the like. The thickness of such a base plating layer can be appropriately set within a range of 10 to 1000 nm.
In addition, the thickness of said silver plating layer 5, the protective layer 6, and the base plating layer 7 can be measured with a fluorescent X-ray measuring apparatus or a focused ion beam (FIB).

  Next, an embodiment of the LED substrate of the present invention having the layer configuration shown in FIG. FIG. 3 is a plan view showing an example of an LED substrate partitioned by multiple imposition, and FIG. 4 is an enlarged cross-sectional view taken along line II of the LED substrate shown in FIG. In FIG. 3 and FIG. 4, the LED substrate 1 is arranged and faced with nine areas 1A (area surrounded by a two-dot chain line in FIG. 3). The number of imposition areas is not limited to the illustrated example. The base material 2 constituting the LED substrate 1 has through grooves 3 so that each imposition 1A is vertically cut and both ends are located outside the imposition area 1A. Then, the first region 2A and the second region 2B are divided through the through groove 3. And on the base material 2 of each imposition 1A, the reflection layer 4 which is a lamination of the silver plating layer 5 and the protective layer 6 is located. The reflection layer 4 is divided into a reflection layer 4A located in the first region 2A of the base 2 and a reflection layer 4B located in the second region 2B by the through groove portion 3 for each imposition 1A. Yes. In each imposition 1A, the edge 4a of the reflective layer 4A and the edge 4b of the reflective layer 4B are separated by a distance corresponding to the opening width of the through groove 3 (opening width on the surface of the substrate 2). And facing each other. Thus, the opening width of the through groove 3 that determines the distance between the edge 4a of the reflective layer 4A and the edge 4b of the reflective layer 4B can be appropriately set in the range of 200 to 600 μm, for example.

When the base material 2 is a metal base material and has electrical conductivity, the reflection layer 4A and the reflection layer 4B of each imposition 1A are in a conductive state via the base material 2, but are electrically insulative as will be described later. After the through groove portion 3 is filled with the resin material, the base material 2 is diced at a position indicated by a two-dot chain line in FIG. The reflective layer 4A and the reflective layer 4B are electrically independent from each other by being divided into two by the through groove portion 3.
In such an LED substrate 1, the wiring connected to the reflective layer 4 </ b> A and the wiring connected to the reflective layer 4 </ b> B may be provided on the base material 2 in an electrically independent state.
Further, the LED substrate of the present invention has a recess in the base material for improving the adhesion between the base material of the LED substrate and the outer frame resin member when the semiconductor device of the present invention as described later is manufactured. It may be. 5 and 6 are a plan view showing an LED substrate having such a recess and an enlarged cross-sectional view taken along the line II-II, corresponding to FIGS. 3 and 4. In the illustrated example, the LED substrate 1 ″ has a concave portion 8 so as to surround the reflective layer 4 for each surfaced 1 ″ A. 5 and 6, the region surrounded by the two-dot chain line indicates one imposition 1 ″ A and indicates the dicing position. The formation position of the recess 8, the depth of the recess, The shape can be set in consideration of the adhesion with the outer frame resin member. For example, the concave portion 8 may be provided so as to surround the reflective layer 4 doubly.

In such an LED substrate of the present invention, the protective layer constituting the reflective layer exhibits excellent resistance to corrosive gases such as oxygen and hydrogen sulfide in the air, and corrosion of the silver plating layer by corrosive gases and the like. Therefore, it is provided with a reflection layer having excellent resistance to corrosive gas and the like and having a good reflectance. In the present invention, the reflectance can be measured with a spectrophotometer. Moreover, since the reflectance of visible region light in a silver plating layer usually increases as the wavelength increases, the reflectance of light in the visible region can be evaluated by the reflectance of short wavelength light of, for example, about 400 to 460 nm. .
The above-described embodiments of the LED substrate are examples, and the present invention is not limited to these embodiments. For example, the reflection layer 4 of the LED substrate 1 shown in FIGS. 3 to 6 may be configured to include a base plating layer 7 as shown in FIG.

[Method for producing LED substrate]
Next, the manufacturing method of the board | substrate for LED of this invention is demonstrated.
FIG. 7 is a process diagram for explaining an embodiment of the manufacturing method of the present invention using the LED substrate 1 shown in FIGS. 3 and 4 as an example.
In FIG. 7, an etching resist film 9 is formed on the front surface 2 a and the back surface 2 b of the base material 2, and etching is performed from both surfaces of the base material 2 to form the through groove portion 3 (FIG. 7A). As the base material 2, the above-mentioned materials can be used. The etching resist film 9 can be formed using a known photosensitive resist. Moreover, the etching liquid for etching the base material 2 can be suitably selected according to the material of the base material 2. For example, when the base material 2 is copper, ferric chloride aqueous solution is used as the etching liquid. can do. The etching method of the base material 2 can be selected as appropriate, such as a spray method or an immersion method.
Next, the reflective layer 4 is formed in the reflective layer forming step. First, an insulating resist layer 10a having an opening with a desired shape is provided on the surface 2a of the base material 2 on which the through-groove portion 3 is formed as described above, and the entire interior of the through-groove portion 3 and the back surface 2b of the base material 2 is provided. An insulating resist layer 10b is provided (FIG. 7B). The opening part which the insulating resist layer 10a has can be suitably set according to the site | part and shape of the reflection layer 4 to form.

Next, a silver plating layer 5 is formed on the surface 2a of the base 2 exposed at the opening of the insulating resist layer 10a by electroplating using the base 2 as a power feeding layer (FIG. 7C). The thickness of the silver plating layer 5 can be set, for example in the range of 1-10 micrometers, Preferably it is 1-5 micrometers. Further, the silver plating layer 5 may be a silver plating layer made of a silver alloy containing other metals such as tin, palladium, copper, gold, indium, rhodium, and zinc. In this case, the content of the other metal forming the silver alloy can be set in consideration of the melting temperature, reflectivity, etc. of the silver alloy, and can be set, for example, in the range of 50% by weight or less.
Subsequently, the protective layer 6 which coat | covers the silver plating layer 5 is formed, and it is set as the board | substrate 1 for LED of this invention (FIG.7 (D)). The protective layer 6 can be formed by forming the silver plating layer 5 as described above, removing the insulating resist layers 10a and 10b, and immersing the substrate 2 in the treatment solution. The treatment solution to be used is (1) a solution in which a chromium compound such as potassium chromate, sodium chromate, ammonium chromate, calcium chromate, silver chromate, palladium chromate, barium chromate is dissolved or dispersed, (2 ) A solution prepared by dissolving or dispersing a tin compound such as tin chloride, tin sulfate, tin acetate, tin sulfamate, tin pyrophosphate, tin bromide, tin iodide, sodium stannate, potassium stannate. The concentration of the chromium compound in the treatment solution (1) and the concentration of the tin compound in the treatment solution (2) are not particularly limited, and can be, for example, in the range of 0.1 to 10% by weight.

And the protective layer 6 which consists of a thin film containing chromium or a chromium compound can be formed by using the processing solution of said (1). The thickness of the protective layer 6 in this case can be, for example, in the range of 1 to 15 nm, preferably 2 to 10 nm.
Moreover, the protective layer 6 which consists of a thin film containing tin or a tin compound can be formed by using the processing solution of said (2). In this case, the thickness of the protective layer 6 can be, for example, 5 to 20 nm, preferably 10 to 15 nm.
Further, immerse in the treatment solution of (1) and after washing, immerse in the treatment solution of (2), or immerse in the treatment solution of (2), immerse in the treatment solution of (1) after washing. Thus, the protective layer 6 made of a thin film containing chromium or a chromium compound and tin or a tin compound can be formed. In this case, the thickness of the protective layer 6 can be, for example, 6 to 30 nm, preferably 10 to 20 nm.
The thickness of the protective layer 6 to be formed can be controlled by the content of the chromium compound, the content of the tin compound, the immersion time, etc. of the treatment solution used. When the thickness of the protective layer 6 is below the above range, There is a possibility that the action of preventing the corrosion of the plating layer 5 may be insufficient, and when the above range is exceeded, the light reflection action of the silver plating layer 5 is inhibited, and the reflectance as the reflection layer 4 is lowered. This is not preferable.

In the manufacturing method of the present invention, when manufacturing the above-described LED substrate 1 ″, for example, the concave portion 8 can be formed on the surface 2a of the base material 2 simultaneously with the formation of the through groove portion 3 described above. Then, as shown in FIG. 8, an insulating resist layer 10a having an opening with a desired shape is provided on the surface 2a of the base material 2, and an insulating resist layer 10b is provided over the entire back surface 2b of the base material 2, Similarly to the manufacture of the LED substrate 1 described above, the silver plating layer 5 and the protective layer 6 can be formed.
In such a method for manufacturing an LED substrate of the present invention, after a silver plating layer is formed, a specific protective layer is formed so as to cover the silver plating layer, thereby forming a reflective layer. Resistance to corrosive gas such as hydrogen sulfide can be imparted to the reflective layer, and it is possible to manufacture an LED substrate having a reflective layer having excellent resistance to corrosive gas and the like and having a good reflectance.
The embodiment of the method for manufacturing an LED substrate described above is an exemplification, and the present invention is not limited to this. For example, in the above-described example, the silver plating layer 5 is covered with the protective layer 6 at the peripheral edge as well as the surface, but the thickness of the silver plating layer 5 is as thin as 1 to 10 μm as described above. Corrosion from the edges is considered to be extremely small. Therefore, the surface of the silver plating layer 5 may be covered with the protective layer 6. In this case, the protective layer 6 is formed after the silver plating layer 5 is formed, and then the insulating resist layer 10 a, It can be performed by immersing the substrate 2 in the treatment solution without removing 10b.

  Further, for example, when the reflective layer 4 of the LED substrate 1 is configured to include the base plating layer 7 as shown in FIG. 2, the insulating resist as shown in FIG. After providing the layer 10a and the insulating resist layer 10b, the base plating layer 7 is formed on the surface 2a of the base 2 exposed at the opening of the insulating resist layer 10a. A plating layer 5 and a protective layer 6 can be formed. Formation of the base plating layer 7 can be performed by electroless plating or electroplating. For example, a copper plating layer or a nickel plating layer having a thickness in the range of 10 to 1000 nm can be used.

[Semiconductor device]
Next, the semiconductor device of the present invention will be described.
9 is a plan view of an embodiment of the semiconductor device of the present invention, and FIG. 10 is a cross-sectional view taken along the line III-III of the semiconductor device shown in FIG. 9 and 10, the semiconductor device 21 includes a base material 22, a reflective layer 24 located on the base material 22, an outer frame resin member 31 located so as to surround the reflective layer 24, and the reflective layer 24. A mounted LED element 41, a conductive portion 42 that electrically connects the LED element 41 and the reflective layer 24, and a sealing resin 35 that seals the LED element 41 and the conductive portion 42 are provided. .
The base material 22 constituting the semiconductor device 21 may be, for example, a metal base material such as copper, copper alloy, 42 alloy (41% nickel iron alloy), and has electrical insulation such as ceramics and glass. A composite substrate or the like in which a conductive material layer is provided on the surface of the substrate can be used. However, it is preferable to use a metal base material in consideration of the heat dissipation of the base material 22 and avoiding the complexity of the structure in forming the external electrode. Moreover, the thickness of the base material 22 can be suitably set, for example in the range of 0.05-0.5 mm.
In the illustrated example, the base material 22 is divided into two via a gap 23, and the gap 23 is filled with an electrically insulating resin material 33. The back surface of one of the divided base materials 22 is a first external electrode 22A, and the back surface of the other base material 22 is a second external electrode 22B. The width of the gap 23 can be appropriately set, for example, in the range of 200 to 600 μm, for example. Further, the position of the gap portion 23 is set so that the LED element 41 mounted on the reflective layer 24A is at or near the center of the reflective layer 24 surrounded by the outer frame resin member 31. It is preferable to do.

The reflective layer 24 includes a reflective layer 24A located on the surface of one of the divided base materials 22 and a reflective layer 24B located on the surface of the other base material 22, and the edge 24a and the reflective layer of the reflective layer 24A. The edge 24 b of 24 B is separated via the gap 23. Therefore, the reflective layer 24A and the reflective layer 24B are electrically independent. Each of the reflective layer 24A and the reflective layer 24B includes a silver plating layer 25 and a protective layer 26 that covers the silver plating layer 25. The silver plating layer 25 and the protective layer 26 can be the same as the silver plating layer 5 and the protective layer 6 constituting the above-described LED substrate 1 of the present invention, and description thereof is omitted here. In the illustrated example, the silver plating layer 25 is covered with the protective layer 26 at the peripheral edge as well as the surface, but the corrosion of the silver plating layer 25 from the peripheral edge is considered to be extremely small. For this reason, only the surface of the silver plating layer 25 may be covered with the protective layer 26.
The LED element 41 is mounted on one reflective layer 24A, and a terminal portion (not shown) located on the mounting surface is connected to the reflective layer 24A via a conductive portion 42 (not shown). It is connected to the first external electrode 22A through 24A. The other terminal portion 41a located on the surface of the LED element 41 is connected to the reflective layer 24B by a conductive portion (bonding wire) 42, and is connected to the second external electrode 22B through the reflective layer 24B.

The outer frame resin member 31 is positioned so as to surround the reflective layer 24, holds the base material 22 divided by the gap 23 together with the resin member 33, and its inner wall surface 31a is formed from the mounted LED element. It is a member which makes the effect | action which reflects the light emission of this. Such an outer frame resin member 31 may be made of, for example, one kind of resin material such as polyphthalamide, epoxy, silicone, liquid crystal polymer, or a combination of two or more kinds.
As described above, the resin member 33 fills the gap portion 23 of the base material 22, and the material may be the same as that of the outer frame resin member 31.
In addition, the sealing resin 35 is required to be a material that is unlikely to cause discoloration or translucency deterioration due to heat or light. For example, the sealing resin 35 includes a silicone resin and diffuses phosphor, silica, alumina, titanium oxide, and the like. You may consist of 1 type of materials, or a combination of 2 or more types.
In such a semiconductor device of the present invention, the LED element 41 is mounted on the reflective layer 24 having the silver plating layer 25 and the specific protective layer 26 covering the silver plating layer 25. Since the protective layer 26 prevents contact with the corrosive gas such as oxygen or hydrogen sulfide in the air, the sealing resin 35 is a resin having a low gas barrier property. In addition, since the corrosion of the silver plating layer 25 is prevented by the protective layer 26, the semiconductor device includes a reflective layer that stably maintains a high reflectance with respect to light emitted from the LED element 41.

In the case where the base material 22 is divided by the gap portion 23 and the gap portion is filled with the resin material 33 as in the above-described embodiment, the heat of the outer frame resin member 31 and the sealing resin 35 is obtained. Distortion due to the difference between the shrinkage and the thermal shrinkage behavior of the metal base material 22 is absorbed by the resin material 33, so that a highly reliable semiconductor device is obtained.
Further, in the present invention, as shown in FIG. 11, the base material 22 on which the outer frame resin member 31 is located has a recess 28 to improve the adhesion of the outer frame resin member 31 to the base material 22. May be.
Next, a manufacturing example of the above-described semiconductor device 21 of the present invention will be described with reference to FIG. 12 as an example using the LED substrate 1 of the present invention shown in FIGS.
First, the electrically insulating resin member 33 is filled in the through groove portion 3 of the LED substrate 1 of each imposition 1A, and the outer frame resin member 31 is formed so as to surround the reflective layer 4 (FIG. 12A). Such outer frame resin member 31 and resin member 33 can be formed, for example, by placing LED substrate 1 in a mold and injection-molding or transfer-molding a thermoplastic resin.
Next, the LED element 41 is mounted on the reflective layer 4A, and a terminal portion (not shown) located on the mounting surface is connected to the reflective layer 4A (FIG. 12B). Thereafter, the other terminal portion 41a located on the surface of the LED element 41 is connected to the reflective layer 4B by the conductive portion (bonding wire) 42 (FIG. 12C).

Next, the LED element 41 and the conductive portion 42 are sealed with a sealing resin 35 (FIG. 12D). Thereafter, by dicing at a predetermined position (position indicated by a two-dot chain line in FIG. 3) for each imposition 1A, the through groove 3 becomes a gap 23 and a semiconductor device 21 is obtained (FIG. 12E). .
The above-described embodiment of the semiconductor device of the present invention is an exemplification, and the present invention is not limited to this. For example, the reflective layer 24 may have a base plating layer on the substrate 22 side. The base plating layer in this case can be the same as the base plating layer 7 of the LED substrate 1 ′ of the present invention described above.
Further, as shown in FIG. 13, the semiconductor device of the present invention has the LED element 41 so as to straddle the reflective layer 24A and the reflective layer 24B, which are positioned so as to be separated from each other via the gap 23 and are electrically independent. May be implemented. In this case, one terminal portion 41a located on the mounting surface of the LED element 41 is connected to the reflective layer 24A via the conductive portion 42 (not shown), and connected to the first external electrode 22A via the reflective layer 24A. Has been. The other terminal portion 41a located on the mounting surface of the LED element 41 is connected to the reflective layer 24B via the conductive portion 42 (not shown), and is connected to the second external electrode 22B via the reflective layer 24B. ing. In such a semiconductor device, the gap 23 is positioned at the center of the reflective layer 24 where the LED element 41 mounted so as to straddle the reflective layer 24A and the reflective layer 24B is surrounded by the outer frame resin member 31, or It is preferable to set the position close to the center. The LED element 41 is mounted via an insulating adhesive so as to straddle the reflective layer 24A and the reflective layer 24B, and the terminal portion 41a located on the surface of the LED element 41 is connected to the reflective layer 24A by the conductive portion (bonding wire) 42. It may be connected to the reflective layer 24B.

  In the semiconductor device of the present invention, as shown in FIG. 14, the base material 22 may be divided into three by two gap portions 23, 23 filled with a resin member 33. In this case, the reflective layers 24A, 24B, and 24C are arranged as illustrated so as to be separated via the gap 23, and the LED element 41 is mounted on the central reflective layer 24C via an insulating adhesive. One terminal portion 41a located on the surface of the LED element 41 is connected to the reflective layer 24A by a conductive portion (bonding wire) 42, and is connected to the first external electrode 22A via the reflective layer 24A. The other terminal portion 41a is connected to the reflective layer 24B by a conductive portion (bonding wire) 42, and is connected to the second external electrode 22B via the reflective layer 24B. In such a semiconductor device, the positions of the two gap portions 23 are located at the central portion of the reflective layer 24 surrounded by the outer frame resin member 31 or the central portion of the LED element 41 mounted on the reflective layer 24C. It is preferable to set so that they are close to each other.

Next, the present invention will be described in more detail by showing specific examples.
[ Reference Example 1]
A copper plate having a thickness of 0.2 mm was prepared as a substrate, an insulating resist layer was formed on one surface, and a silver plating layer (thickness 3 μm) was formed on the other surface by electroplating.
Next, a tin chloride dispersion solution (tin chloride content = 3% by weight) is prepared as a tin compound-containing treatment solution A, and the above-mentioned base material on which a silver plating layer has been formed is immersed in this for 2 minutes, washed with water and dried. Then, a protective layer made of a tin compound having a thickness of about 10 nm was formed on the silver plating layer. Thereafter, the insulating resist layer was removed to produce an LED substrate as shown in FIG.
The surface analysis of the formed protective layer was performed by Auger electron spectroscopy (AES), the tin content was measured, and the results are shown in Table 1 below.
In addition, the thickness of the silver plating layer and the protective layer was measured using a fluorescent X-ray measuring apparatus and a focused ion beam (FIB). The same applies to the following reference examples, examples, and comparative examples.

[ Reference Example 2]
Using a high-concentration tin chloride dispersion solution (tin chloride content = 10% by weight) as the tin compound-containing treatment solution B, the substrate is immersed for 3 minutes, and a protective layer made of a tin compound having a thickness of about 15 nm is silver. An LED substrate as shown in FIG. 1 was produced in the same manner as in Reference Example 1 except that it was formed on the plating layer.
The surface analysis of the formed protective layer was performed in the same manner as in Reference Example 1, the tin content was measured, and the results are shown in Table 1 below.

[ Reference Example 3]
In the same manner as in Reference Example 1, the formation of the silver plating layer was performed.
Next, a potassium chromate solution (potassium chromate content = 3 wt%) was prepared as the chromium compound-containing treatment solution A, and the above-mentioned base material on which the silver plating layer was formed was immersed for 2 minutes, washed with water, It dried and formed the protective layer which consists of a chromium compound about 6 nm thick on a silver plating layer. Thereafter, the insulating resist layer was removed to produce an LED substrate as shown in FIG.
The surface analysis of the formed protective layer was performed in the same manner as in Reference Example 1, the chromium content was measured, and the results are shown in Table 1 below.

[ Reference Example 4]
A high-concentration potassium chromate solution (potassium chromate content = 10% by weight) is used as the chromium compound-containing treatment solution B, the substrate is immersed for 5 minutes, and a protective layer made of a chromium compound having a thickness of about 10 nm is formed. An LED substrate as shown in FIG. 1 was produced in the same manner as in Reference Example 3 except that it was formed on the silver plating layer.
The surface analysis of the formed protective layer was performed in the same manner as in Reference Example 1, the chromium content was measured, and the results are shown in Table 1 below.

[ Example ]
In the same manner as in Reference Example 1, the formation of the silver plating layer was performed.
Next, the substrate was immersed in the tin compound-containing treatment solution A for 2 minutes and washed with water, then immersed in the chromium compound-containing treatment solution A for 2 minutes, washed with water and dried. Thereby, a protective layer having a thickness of about 14 nm (the thickness of the protective layer made of a tin compound was about 9 nm, and the thickness of the protective layer made of a chromium compound was about 5 nm) was formed on the silver plating layer. Thereafter, the insulating resist layer was removed to produce an LED substrate as shown in FIG.
The surface analysis of the formed protective layer was performed in the same manner as in Reference Example 1, the tin content and the chromium content were measured, and the results are shown in Table 1 below.

[ Reference Example 5 ]
In the same manner as in Reference Example 1, the formation of the silver plating layer was performed.
Next, the substrate was immersed in the chromium compound-containing treatment solution A for 2 minutes and washed with water, then immersed in the tin compound-containing treatment solution A for 2 minutes, washed with water and dried. Thereby, a protective layer having a thickness of about 14 nm (a thickness of the protective layer made of a chromium compound was about 4 nm and a thickness of the protective layer made of a tin compound was about 10 nm) was formed on the silver plating layer. Thereafter, the insulating resist layer was removed to produce an LED substrate as shown in FIG.
The surface analysis of the formed protective layer was performed in the same manner as in Reference Example 1, the tin content and the chromium content were measured, and the results are shown in Table 1 below.

[Comparative example]
In the same manner as in Reference Example 1, the formation of the silver plating layer was performed, and then the LED substrate was fabricated without forming the protective layer thereafter.

[Evaluation of corrosion resistance]
The reflectances of the seven types of LED substrates produced (Examples , Reference Examples 1 to 5 and Comparative Examples) were measured, and the reflectances at 430 nm are shown in Table 1 below.
Moreover, the reflectance in 430 nm after performing the process of the following test conditions 1 with respect to each board | substrate for LED was measured, and it showed in following Table 1. FIG.
(Test condition 1)
Submerged in a 0.25% ammonium sulfide solution at a liquid temperature of 25 ° C. for 5 minutes. Further, the reflectance at 430 nm after the treatment of the following test condition 2 was measured for each LED substrate, and the following Table 1 was obtained. Indicated.
(Test condition 2)
Exposure to an atmosphere of hydrogen sulfide concentration 3 ppm, temperature 40 ° C., humidity 80% for 1 hour In addition, the reflectance is measured using a spectrophotometer (UV-2550, MPC-2200) manufactured by Shimadzu Corporation. It was.

In the substrate for LED (comparative example) which is not provided with the protective layer on the silver plating layer, after the treatment under the test condition 1 and the test condition 2, the reflectivity is significantly reduced and the corrosion is generated. confirmed.
In contrast, the LED substrate ( Reference Example 1) provided with a protective layer made of a tin compound formed using the tin compound-containing treatment solution A on the silver plating layer is compared with the LED substrate of the comparative example. Although the untreated reflectance is slightly reduced, the reflectance is less lowered than that of the LED substrate of the comparative example after both of the test conditions 1 and 2, and the corrosion prevention effect by the protective layer is exhibited. It has been confirmed. Moreover, the board | substrate for LED ( reference example 2) provided with the protective layer which consists of a tin compound formed using the tin compound containing process solution B which is a high concentration tin chloride dispersion solution on a silver plating layer is an untreated reflection. Although the rate is slightly lower than that in Reference Example 1, the reduction in reflectance is less than that in Reference Example 1 after both treatments under Test Conditions 1 and 2, and the corrosion prevention effect by the protective layer is improved. It was confirmed. From this, it was confirmed that by controlling the concentration and immersion time of the tin compound-containing treatment solution, the denseness of the protective layer can be adjusted to improve the corrosion prevention effect.

Moreover, the board | substrate for LED ( reference example 3) provided with the protective layer which consists of a chromium compound formed using the chromium compound containing process solution A on a silver plating layer is untreated compared with the board | substrate for LED of a comparative example. Although the reflectivity of the film is improved and the decrease in the reflectivity after the treatment under the test condition 2 is large, the decrease in the reflectivity after the treatment under the test condition 1 is small. It was confirmed. Further, an LED substrate ( Reference Example 4) provided with a protective layer made of a chromium compound formed using a chromium compound-containing treatment solution B, which is a high-concentration potassium chromate solution, on the silver plating layer is an untreated reflection. the rate is the same as in reference example 3, even after any treatment of the test condition 1 and the test condition 2, decrease in reflectivity less than reference example 3, the drop in reflectance after particular test condition 2 treatment It became less than the substrate for LED of a comparative example, and it was confirmed that the corrosion prevention effect by a protective layer is improving. From this, it was confirmed that by controlling the concentration and immersion time of the chromium compound-containing treatment solution, the denseness of the protective layer can be adjusted to improve the corrosion prevention effect.
Further, an LED substrate ( Example ) provided with a protective layer on which a layer containing a tin compound and a layer containing a chromium compound are laminated in this order is not compared with the LED substrate of the comparative example. The reflectance of the treatment is the same, and no reduction in the reflectance is observed after any of the treatments in Test Condition 1 and Test Condition 2, and excellent corrosion prevention by the protective layer compared to Reference Examples 1 to 4 It was confirmed that the effect was achieved. Furthermore, the substrate for LED (Example) is compared with the substrate for LED (Reference Example 5) provided with a protective layer on which a layer containing a chromium compound and a layer containing a tin compound are laminated in this order. It was confirmed that the corrosion prevention effect by the protective layer was good.

  The present invention can be applied to various uses, products, and manufactures using LED elements.

DESCRIPTION OF SYMBOLS 1,1 ', 1 "... LED board 21 ... Semiconductor device 2,22 ... Base material 3 ... Through-groove part 23 ... Gap part 4,4', 24 ... Reflective layer 5,25 ... Silver plating layer 6,26 ... Protection Layer 7: Base plating layer 8, 28 ... Recess 35 ... Sealing resin 41 ... LED element 42 ... Conductive part

Claims (11)

A reflective layer located in a desired region of the base material, the reflective layer comprising a silver plating layer and a protective layer covering the silver plated layer, the protective layer comprising tin or a tin compound; A substrate for LED , wherein a layer containing and a layer containing chromium or a chromium compound are laminated on the silver plating layer in this order . The LED substrate according to claim 1, wherein the reflective layer has a base plating layer on the substrate side. The base material has a plurality of LED mounting regions defined by multiple imposition, and each imposition has at least one portion where the edge of the reflective layer is separated by a desired distance. The LED substrate according to claim 1 or 2 . The LED substrate according to claim 3 , wherein the base member has a through groove portion on each imposition, and an edge portion of the reflective layer is opposed through the through groove portion.   A step of forming a silver plating layer in a desired region of the substrate, a tin compound-containing treatment solution, and then a chromium compound-containing treatment solution are brought into contact with the silver plating layer to contain tin or tin compound and chromium or chromium compound A method for producing an LED substrate, comprising: a step of forming a thin film so as to cover the silver plating layer to form a protective layer. 6. The method for manufacturing an LED substrate according to claim 5 , wherein the reflective layer forming step includes a step of forming a base plating layer before the step of forming the silver plating layer. A plurality of LED mounting regions are defined on the base material by multiple impositions, and through grooves are formed in desired portions of the respective impositions. In the reflective layer forming step, the imprint areas are separated from each other through the through grooves. The method for manufacturing an LED substrate according to claim 5 , wherein the reflective layer is formed in a region. A base material, a plurality of reflective layers located in a desired region of the base material and being electrically independent, and an LED element mounted on one reflective layer or across a plurality of the reflective layers; A conductive portion that electrically connects the LED element and the desired reflective layer; and a sealing resin that seals the LED element and the conductive portion; and the reflective layer includes a silver plating layer, A protective layer covering the silver plating layer, and the protective layer is formed by laminating a layer containing tin or a tin compound and a layer containing chromium or a chromium compound in this order on the silver plating layer. A semiconductor device. The semiconductor device according to claim 8 , wherein the reflective layer has a base plating layer on the substrate side. The base material is a metal base material, and the metal base material is divided so as to be electrically independent by a gap portion, and the reflective layer is located in a desired region of each of the divided metal base materials. 10. The semiconductor device according to claim 8 or 9 , wherein The sealing resin, the semiconductor device according to any one of claims 8 to 10, characterized in that a silicone resin.

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