JP5745895B2 - Vapor deposition apparatus and vapor deposition method - Google Patents

Description

  The present invention relates to a vapor deposition apparatus and a vapor deposition method for forming a vapor deposition film having a film formation pattern using a vapor deposition mask on a substrate.

  In recent years, organic EL display devices using organic electroluminescence elements have attracted attention as display devices that replace CRTs and LCDs.

  This organic EL display device has a structure in which an electrode layer and a plurality of organic light emitting layers are laminated on a substrate, and a sealing layer is further formed on the substrate. It is self-luminous, has excellent high-speed response compared to an LCD, and has a high field of view. Corners and high contrast can be realized.

  Such an organic EL device is generally manufactured by a vacuum vapor deposition method, in which a substrate and a vapor deposition mask are aligned and closely adhered in a vacuum chamber, and a vapor deposition film having a desired film formation pattern is formed on the substrate by the vapor deposition mask. Is formed.

  Further, in the manufacture of such an organic EL device, the vapor deposition mask for obtaining a desired film formation pattern is enlarged with an increase in the size of the substrate. For this increase in size, tension was applied to the vapor deposition mask. Since it must be manufactured by welding and fixing to the mask frame in the state, it is not easy to manufacture a large evaporation mask, and if this tension is not sufficient, the mask will be distorted and the center of the mask will be distorted. The degree of adhesion of the substrate is reduced, and the mask frame becomes large in order to take these into consideration, and the increase in thickness and weight becomes remarkable.

  As described above, it is required to increase the size of the vapor deposition mask as the substrate size increases. However, it is difficult to increase the size of the high-definition mask. Has produced.

  For example, as shown in Japanese Translation of PCT International Publication No. 2010-511784, etc., the substrate and the vapor deposition mask are separated from each other, and the organic light emitting layer is formed with high accuracy by an opening that generates vapor particles having directivity from the evaporation source. However, the evaporation source and the opening for generating directivity have an integrated structure, and the integrated structure is heated to a high temperature to generate evaporated particles from the opening. Therefore, radiation heat from the evaporation source is received by the vapor deposition mask, and it is impossible to prevent a decrease in position accuracy of the film formation pattern due to thermal expansion of the vapor deposition mask.

  Furthermore, by adopting a configuration in which the substrate and the vapor deposition mask are spaced apart and relatively moved, a desired film formation pattern can be vapor-deposited over a large area even with a small vapor deposition mask. When the position of the evaporation port portion is shifted due to expansion, there is a problem that the position of the film forming pattern is also shifted.

Special table 2010-511784 gazette

  The present invention solves these various problems, and does not increase the size of the vapor deposition mask to the same size as the substrate is enlarged. Evaporation film with a deposition pattern can be deposited using a deposition mask, and the structure can be simply and efficiently deposited by moving it in a separated state, and the limiting opening can be used as an evaporation source even in the separated state. By providing it between the vapor deposition mask, it is possible to limit the scattering direction of the evaporated particles and prevent the evaporated particles from passing through the evaporation port at the adjacent or remote positions so as not to overlap the film formation patterns. The mask holder has an evaporation mask attached to a mask holder with a scattering restriction provided with an opening, and this mask holder not only serves as a scattering restriction but also suppresses the incidence of radiant heat from the evaporation source. Deposition of the film formation pattern due to thermal expansion of the vapor deposition mask is prevented, and further, the amount of thermal expansion changes due to the temperature change of the evaporation source, thereby preventing the position deviation of the film formation pattern due to the positional deviation of the evaporation port, and the substrate and the vapor deposition mask. It is an object of the present invention to provide a vapor deposition apparatus and a vapor deposition method that can perform high-accuracy vapor deposition while being relatively moved in a separated state.

  The gist of the present invention will be described with reference to the accompanying drawings.

A film forming material evaporated from the evaporation source 1 is deposited on the substrate 4 through the mask opening 3 of the vapor deposition mask 2, and a vapor deposition film having a film formation pattern defined by the vapor deposition mask 2 is formed on the substrate 4. In the vapor deposition apparatus configured as described above, scattering of the evaporated particles of the film forming material evaporated from the evaporation source 1 is between the evaporation source 1 and the substrate 4 disposed in a state of being opposed to the evaporation source 1. A mask holder 6 having a scattering restriction portion provided with a restriction opening portion 5 for restricting the direction is provided, and the substrate 4 and the vapor deposition mask 2 provided in a separated state are joined to the mask holder 6 and attached. The substrate 4 is configured to be movable relative to the mask holder 6 provided with the vapor deposition mask 2 and the evaporation source 1 while maintaining a separated state from the vapor deposition mask 2. , Steam to heat the film forming material The particle generator 26 is provided with a laterally diffusing portion 27 for diffusing the evaporated particles generated from the evaporated particle generating portion 26 and making the pressure uniform, and the laterally diffusing portion 27 is laterally orthogonal to the relative movement direction of the substrate 4. a structure in which a plurality juxtaposed vapor Hatsuguchi portion 8 in the direction, a part or all of the evaporation source 1, the linear expansion coefficient is formed at a smaller material than stainless steel, wherein the evaporation source 1, the Horizontal diffusion portion 27 Are formed in parallel in the transverse direction perpendicular to the relative movement direction of the substrate 4, and a flexible pipe 30 is provided between the divided diffusion portions 27A so as to expand and contract in the lateral direction. The vapor deposition apparatus is characterized by comprising a support portion 31 that is fixed to the divided diffusion portion 27A of the lateral diffusion portion 27 and a construction portion 32 that is constructed between the support portions 31. is there.

2. The vapor deposition apparatus according to claim 1, wherein the coefficient of linear expansion of the material forming the evaporation source 1 is 8.5 × 10 ⁻⁶ / ° C. or less.

The evaporation source 1 includes a plurality of the divided diffusion portions 27A that constitute the horizontally long diffusion portion 27 arranged in the horizontal direction, and the divided diffusion portions 27A of the horizontally long diffusion portion 27 are connected by the flexible pipe 30. The laterally long diffusion part 27 is configured, and the divided diffusion part 27A of the laterally long diffusion part 27 is fixed in a sandwiched state from the front and rear of the relative movement direction of the substrate 4 or in a erected state in the relative movement direction. The support portions 31 for suppressing the thermal expansion movement of the central portion of the divided diffusion portion 27A are juxtaposed in a lateral direction perpendicular to the relative movement direction, and the installation portion 32 is installed between the lateral directions of the support portion 31. The vapor deposition apparatus according to claim 1, wherein the vapor deposition apparatus is configured as described above.

The vapor deposition apparatus according to any one of claims 1 to 3 , wherein a temperature control mechanism 9 is provided in at least one of the support part 31 and the installation part 32.

Further, between the Horizontal diffusion portion 27 and the bearing portion 31, or between at least one of between the bearing 31 and the bridging section 32, of the claims 1-4, characterized in that it has inserted a heat insulator 33 This relates to the vapor deposition apparatus described in any one of the items.

The vapor deposition according to any one of claims 1 to 5 , wherein the erection part 32 or both the erection part 32 and the support part 31 are made of a material having a smaller linear expansion coefficient than stainless steel. It concerns the device.

Further, the support portion 31 is formed of a material having a smaller linear expansion coefficient than that of the divided diffusion portion 27A of the laterally long diffusion portion 27, and in the lateral direction orthogonal to the relative movement direction of the substrate 4 of the divided diffusion portion 27A. A plurality of the flexible pipes 30 that are fixed to the central portion and arranged in the lateral direction and connect the divided diffusion portions 27A are configured to be positioned between the support portions 31. 7. The vapor deposition apparatus according to claim 6 , wherein the erected part 32 is formed of a material having a smaller linear expansion coefficient than the divided diffusion part 27A of the laterally long diffusion part 27.

Further, the erection part 32 or both the support part 31 and the erection part 32 are formed of an invar material, and the vapor deposition apparatus according to any one of claims 6 and 7 , .

Furthermore, those of the evaporation source 1 to the vapor deposition apparatus according to any one of claims 1-8, characterized in that it has one or more juxtaposed in the lateral direction orthogonal to the relative moving direction of the substrate 4 It is.

Also, around the periphery or the evaporation port portion 8 of the Horizontal diffusion portion 27 in at least one of claims 1-9, characterized in that disposed heat blocking part 19 for blocking heat the evaporation source 1 This relates to the vapor deposition apparatus described in any one of the items.

Further, the evaporator outlet portion 8 of the evaporation source 1, claim 1-10, characterized in that a laterally narrow slit-like orthogonal long as this relative movement direction of the substrate 4 1 those of the vapor deposition apparatus according to claim.

In addition, the horizontally long diffusing portion 27 is provided with an introducing portion 28 in which the evaporated particles diffused by the horizontally long diffusing portion 27 are scattered with directivity when ejected from the evaporation port 8. those of the vapor deposition apparatus according to any one of claims 1 to 11.

Further, the plurality of evaporation port portions 8 are provided on the front end surface of the introduction portion 28 on the substrate 4 side, and the introduction length of the introduction portion 28 toward the substrate 4 side is defined as the relative movement direction of the substrate 4. 13. The vapor deposition apparatus according to claim 12 , wherein the length is longer than the width of the introduction portion 28 in the transverse direction perpendicular to the vertical direction.

Moreover, the guides 28 are those of the vapor deposition apparatus according to any one of claims 12, 13, characterized in that the said oblong diffusion portion 27 is disposed to protrude toward the substrate 4 side It is.

Further, the film-forming material, in which according to the deposition apparatus according to any one of claims 1 to 14, characterized in that an organic material.

Further, vapor deposition using said deposition apparatus according to any one of claims 1 to 15, and forming a deposited film of a deposition pattern defined by the deposition mask 2 on the substrate 4 It concerns the method.

  Since the present invention is configured as described above, even if the deposition mask is not enlarged as the substrate is enlarged, the deposition mask can be widely used by relatively moving the substrate in a separated state even if the deposition mask is smaller than the substrate. Vapor deposition film can be deposited, and the structure can be simply and efficiently deposited by moving relative to each other in the separated state, and the limiting opening can be formed between the evaporation source and the vapor deposition mask even in the separated state. By limiting the direction in which the evaporated particles are scattered, it is possible to prevent the overlapping of the film formation patterns without passing the evaporated particles from the adjacent or distant evaporation ports. The mask holder having the scattering restriction part is provided with a vapor deposition mask, and this mask holder not only serves as a scattering restriction part but also radiant heat from the evaporation source enters the vapor deposition mask. It is possible to suppress the thermal expansion of the vapor deposition mask, and by forming the evaporation source with a material having a smaller linear expansion coefficient than stainless steel, the position of the film formation pattern due to the displacement of the evaporation port of the evaporation source A vapor deposition apparatus and a vapor deposition method capable of performing high-accuracy vapor deposition while being configured to move the substrate and the vapor deposition mask relative to each other in a separated state can be suppressed.

  Especially in the manufacture of organic EL devices, it is possible to cope with the increase in size of the substrate, the organic light emitting layer can be deposited with high accuracy, and the damage of the substrate, the deposition mask, and the deposited film due to the mask contact can be prevented. It becomes the vapor deposition apparatus and vapor deposition method for organic EL device manufacture which can implement | achieve vapor deposition of this.

In addition, the divided diffusing parts constituting the horizontally long diffusing parts are fixedly supported by the supporting parts, and the supporting parts arranged in parallel in the lateral direction perpendicular to the relative movement direction of the substrate are erected by the erection parts, and each divided diffusing part is further provided. By connecting with flexible piping, the evaporation port part provided in this horizontally long diffusion part is displaced due to thermal expansion in the lateral direction orthogonal to the relative movement direction of the substrate, and the film pattern is prevented from being displaced. Can do.

In the invention of claim 2, evaporation sources, by forming in low thermal expansion material linear expansion coefficient of 8.5 × 10 -6 ^/ ℃ or less containing titanium, thermal expansion during the deposition material changed Can be further suppressed.

Furthermore, in the invention according to claim 3 , the divided diffusion portions of the horizontally long diffusion portions arranged in parallel in the lateral direction orthogonal to the relative movement direction of the substrate are sandwiched from before and after the relative movement direction of the substrate or the relative movement direction. The support part is fixed in the installed state, and the support parts are fixed in the horizontal direction perpendicular to the relative movement direction of the board, and are arranged in parallel in the horizontal direction perpendicular to the relative movement direction of the board. By connecting the divided diffusion parts of the horizontally long diffusion part with a flexible pipe that can be expanded and contracted in the horizontal direction orthogonal to the relative movement direction, the evaporation port provided in the divided diffusion part is further laterally orthogonal to the relative movement direction of the substrate. It is possible to prevent the film formation pattern from being displaced due to the displacement in the direction due to thermal expansion. That is, the amount of thermal expansion of the central portion fixed at the support portion of the divided diffusion portion of the horizontally long diffusion portion is not heated, so that the thermal expansion amount of the installation portion is lower than the evaporation source, and the flexible pipe heats the evaporation source. By absorbing the thermal stress at the time and expanding and contracting, even if multiple divided diffusion parts are arranged in the horizontal direction perpendicular to the relative movement direction of the substrate and multiple evaporation ports are arranged in parallel to this, it is possible to suppress positional deviation. Can be deposited with high accuracy.

In the invention according to claim 4, by providing a temperature control mechanism in at least one of the support part or the erection part, it becomes possible to keep the temperature uniformly lower than the temperature of the horizontally long diffusion part, The amount of expansion is suppressed, and the amount of thermal expansion in the lateral direction orthogonal to the relative movement direction of the substrate is suppressed in the horizontally long diffusion portion and the installation portion supported by the support portion.

Further, in the invention according to claim 5 , the heat of the horizontally long diffusion portion during heating of the evaporation source is provided by inserting a thermal insulator between at least one of the horizontally long diffusion portion and the support portion or between the support portion and the installation portion. However, the amount of thermal expansion in the lateral direction perpendicular to the direction of relative movement of the substrate of the installation part is suppressed by suppressing the temperature rise of the installation part.

Further, in the invention according to claim 6 , by forming both the erection part or the erection part and the support part with a material having a smaller linear expansion coefficient than stainless steel, the thermal expansion of the erection part is suppressed, and the division is accordingly performed. Thermal expansion at the position supported by the support portion of the horizontally long diffusion portion is also suppressed.

In the invention according to claim 7, the horizontally long diffused portion in which a plurality of divided diffused portions arranged in parallel in the lateral direction orthogonal to the relative movement direction of the substrate is connected by a flexible pipe is provided on the substrate of each divided diffused portion. This bearing is supported by a bearing part made of a material having a smaller linear expansion coefficient than that of the laterally diffusing part at the center part in the transverse direction perpendicular to the relative movement direction, and arranged in parallel in the transverse direction perpendicular to the relative movement direction of the substrate. Between the parts, an installation part made of a material having a smaller linear expansion coefficient than that of the horizontally long diffusion part is installed, and the divided diffusion parts of the horizontally long diffusion part are connected by a flexible pipe that can expand and contract in the transverse direction perpendicular to the relative movement direction. As a result, the flexible pipe absorbs the thermal stress when the evaporation source is heated and expands and contracts, and a plurality of divided diffusion parts of the horizontally long diffusion part are arranged in parallel in the transverse direction perpendicular to the relative movement direction of the substrate. Evaporating port Be arranged, it can be deposited even higher accuracy.

In the invention according to claim 8 , at least one of the support part or the erection part can be kept at a low temperature by the temperature control mechanism, and the linear expansion coefficient is small near normal temperature, but the linear expansion coefficient becomes high. Therefore, the laterally long diffusion portion supported by the support portion can further suppress the amount of thermal expansion in the lateral direction perpendicular to the relative movement direction of the substrate. .

Further, in the invention according to claim 9 , the evaporation source for vapor deposition in the laterally long range orthogonal to the relative movement direction of the substrate may be constituted by one evaporation source that is long in the lateral direction, or more diffusion portion A plurality of evaporation sources having small diffusing portions may be arranged side by side in the lateral direction perpendicular to the relative movement direction of the substrate so that the pressure of the substrate is uniform.

Further, in the invention described in claim 10 , a heat shut-off unit such as a cooling member (functioning as a temperature control unit provided in the evaporation source), for example, a cooling member is arranged around the evaporation source. By doing, the temperature rise of a vapor deposition mask can be suppressed.

Further, in the invention described in claim 11 , it is caused by the gap between the substrate and the vapor deposition mask by narrowing the lateral opening width orthogonal to the relative movement direction of the substrate at the evaporation port portion of the evaporation source (the size of this gap). (Which also changes depending on the distance between the evaporation port portion and the evaporation mask), the shadow of the film formation pattern (the amount of protrusion of the inclined portion on the side edge of the evaporation film) can be further suppressed, and the opening length of the evaporation port portion is relatively By elongating in the moving direction, the evaporation rate can be increased.

Further, in the inventions according to claims 12 and 13 , the amount of material used for film formation of the evaporated particles ejected from one evaporation port portion is improved as compared with the evaporated particles having low directivity with the increased directivity of the evaporated particles. Are the same, the scattering angle of the evaporated particles within the effective range of film formation is reduced as a whole, and the incident angle at which the evaporated particles are incident on the vapor deposition mask opening is also reduced as a whole. The amount of change in the film forming pattern position with respect to the gap variation can be reduced.

In addition, in the invention described in claim 14 , the heat blocking portion can be disposed on the evaporation source side from the evaporation port portion by disposing the introducing portion protruding from the horizontally long diffusion portion toward the substrate side. Thus, even if a heat blocking part is provided between the evaporation ports, the evaporated particles do not adhere to the heat blocking part, resulting in a vapor deposition apparatus with high material use efficiency and maintainability.

Further, in the invention described in claim 15 , it becomes an organic material evaporation apparatus, and is further excellent in practicality. Moreover, in the invention of Claim 16 , it becomes the outstanding vapor deposition method which exhibits the said effect | action and effect.

BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a schematic front view of a cross section of the main part of the present example (Example 1). It is a description perspective view of the evaporation source of a present Example (Example 1). It is explanatory explanatory drawing which shows another example of the evaporation source of a present Example (Example 1). It is an explanation perspective view of the evaporation source of the 2nd example (example 2). It is an explanatory top view which shows the case where the temperature control mechanism of the evaporation source of 2nd Example (Example 2) is provided. It is an explanatory top view which shows the case where the thermal insulator of the evaporation source of a 2nd Example (Example 2) is inserted. It is an explanatory top view which shows the case where the horizontally long spreading | diffusion part of a 3rd Example (Example 3) is divided into 2 parts. It is an explanatory top view which shows the case where the horizontally long diffusion part of a 3rd Example (Example 3) is divided into 4 parts. It is explanatory drawing which shows that the film-forming pattern shifts | deviates because the position of the evaporation port part of the evaporation source of a present Example shift | deviates. It is explanatory drawing which shows that the shadow of a vapor deposition film can be controlled by narrowing the opening width of the evaporation port part of the evaporation source of a present Example, and a gap can be taken large by this.

  An embodiment of the present invention which is considered to be suitable will be briefly described with reference to the drawings showing the operation of the present invention.

  In FIG. 1, the film-forming material evaporated from the evaporation source 1 passes through the restriction opening 5 of the mask holder 6 configured as a scattering restriction part, and onto the substrate 4 through the mask opening 3 of the vapor deposition mask 2. After deposition, a vapor deposition film having a film formation pattern defined by the vapor deposition mask 2 is formed on the substrate 4.

  At this time, the substrate 4 and the vapor deposition mask 2 are arranged in a separated state, and the substrate 4 is configured to be movable relative to the vapor deposition mask 2 and the evaporation source 1 while maintaining the separated state. Thus, by relatively moving the substrate 4, a deposition film having a deposition pattern defined by the deposition mask 2 is formed on the substrate 4 in a wider range than the deposition mask 2 itself.

  Further, a mask holder 6 having a scattering restriction portion provided with the restriction opening 5 for restricting the scattering direction of the evaporated particles of the film forming material evaporated from the evaporation source 1 between the vapor deposition mask 2 and the evaporation source 1. To prevent the deposition patterns from overlapping even if the vapor deposition mask 2 and the substrate 4 are in a separated state without allowing the vaporized particles from the vaporization openings 8 adjacent or separated by the restriction opening 5 to pass therethrough. doing.

  Further, since the vapor deposition mask 2 is attached to the mask holder 6 constituting the scattering restriction portion, the incidence of heat from the evaporation source 1 is suppressed, and the temperature rise of the mask holder 6 and the vapor deposition mask 2 is suppressed, Further, even when the vapor deposition mask 2 is separated from the substrate 4, since the heat of the vapor deposition mask 2 is conducted to the mask holder 6 due to contact with the mask holder 6, the temperature at which the vapor deposition mask 2 is maintained at a constant temperature. Holding function is improved.

  Further, for example, if a temperature control mechanism for holding the temperature of the vapor deposition mask 2 is provided in at least one of the mask holder 6 or the vapor deposition mask 2 as necessary, the temperature rise of the mask holder 6 or the vapor deposition mask 2 is further suppressed. Thus, the temperature holding function for holding the single-layer vapor deposition mask 2 at a constant temperature is improved.

  Therefore, the mask holder 6 having the scattering restriction portion also functions as a temperature holding function at the same time as the function of restricting the scattering direction of the evaporated particles, can suppress the temperature rise of the vapor deposition mask 2, and keep the vapor deposition mask 2 at a constant temperature. This also prevents distortion of the vapor deposition mask 2 due to heat.

  Accordingly, the substrate 4 is moved relative to the vapor deposition mask 2, the mask holder 6 provided with the vapor deposition mask 2 and the evaporation source 1 while keeping the separated state from the vapor deposition mask 2 in this relative movement direction. The vapor deposition film of the above-mentioned film formation pattern by the vapor deposition mask 2 is continued to form a vapor deposition film in a wide range even with the vapor deposition mask 2 smaller than the substrate 4, and the film formation pattern by incidence from the evaporation port 8 at the adjacent or remote position. Overlapping and distortion due to heat are sufficiently suppressed, and a vapor deposition apparatus capable of performing highly accurate vapor deposition is obtained.

  Further, since the evaporation source 1 is made of a material having a linear expansion coefficient smaller than that of stainless steel, it is possible to suppress the positional deviation of the film formation pattern due to the positional deviation of the evaporation port portion of the evaporation source. The vapor deposition apparatus and the vapor deposition method are capable of performing vapor deposition with high accuracy while being configured to move relative to each other in a separated state.

  A first embodiment of the present invention will be described with reference to the drawings.

  FIG. 1 is an overall view of the schematic apparatus.

  In this embodiment, a film forming material (for example, an organic material for manufacturing an organic EL device) evaporated from an evaporation source 1 provided in a vapor deposition chamber 7 (vacuum chamber 7) in a reduced pressure atmosphere is used as a mask for the vapor deposition mask 2. In a vapor deposition apparatus configured to deposit on a substrate 4 through an opening 3 and to form a vapor deposition film having a film formation pattern defined by the vapor deposition mask 2, the substrate 4 and the vapor deposition mask 2 are formed. Are separated from each other, and the substrate 4 is separated from the vapor deposition mask 2 with respect to the mask holder 6 and the evaporation source 1 configured as the vapor deposition mask 2 and the scattering restriction portion provided with the restriction opening 5. The vapor deposition film of the film formation pattern defined by the vapor deposition mask 2 is formed on the substrate 4 in a range wider than the vapor deposition mask 2 by this relative movement. Yes.

  Further, a restriction opening 5 is provided between the vapor deposition mask 2 and the evaporation source 1 to limit the scattering direction of the evaporated particles of the film forming material evaporated from the evaporation ports 8 of the evaporation sources 1 arranged in parallel. A mask holder 6 that constitutes a scattering restriction portion is provided, the vapor deposition mask 2 is stretched in contact with the end portion of the mask holder 6 on the substrate 4 side, and the vaporized particles having a large scattering angle θ are restricted. The evaporation particles from the evaporation port 8 at a remote position are not allowed to pass.

  That is, as a configuration in which vapor deposition is performed with evaporated particles from the plurality of evaporation ports 8, vapor deposition can be performed on the substrate 4 having a large area, and from the evaporation ports 8 adjacent or separated by the restriction opening 5. Even if the vapor deposition mask 2 and the substrate 4 are separated from each other by preventing incidence, overlapping of the film formation patterns is prevented.

  In this embodiment, a plurality of evaporation sources 1 may be arranged side by side and the respective evaporation port portions 8 may be arranged in parallel. However, a configuration in which a plurality of evaporation port portions 8 are arranged in parallel on one horizontally long evaporation source 1 is adopted. The evaporation source 1 is composed of an evaporation particle generation unit 26 that heats the film forming material and a horizontally long diffusion unit 27 that diffuses the evaporation particles generated from the evaporation particle generation unit 26 to equalize the pressure, A plurality of the evaporation port portions 8 are arranged in the laterally long diffusion portion 27 in the lateral direction. To explain further, for example, the film-forming material is stored in the exchangeable particle generation unit 26 (crucible 26) by an automatic crucible exchange mechanism, and the vaporized particles heated and evaporated in the crucible 26 are temporarily stopped to equalize the pressure. The horizontally long diffuser 27 is provided, and a plurality of slit-like openings that are long in the relative movement direction and narrow in the lateral direction are arranged in parallel along the lateral direction at the top of the horizontally long diffuser 27. A plurality of the evaporation ports 8 are arranged side by side.

  Further, each of the evaporation ports 8 arranged in parallel in the horizontal direction is provided at the tip of the introduction portion 28 protruding from the horizontally long diffusion portion 27 of the evaporation source 1, and around the horizontal diffusion portion 27 or between the introduction portions 28. A heat shut-off unit 19 that shuts off the heat of the evaporation source 1 is provided.

  The heat blocking unit 19 may be anything that shields heat, but this embodiment employs a cooling plate, has a medium path for supplying a cooling medium, and the cooling medium takes away heat from the evaporation source 1. However, a heat exchanging part that exchanges this heat through the medium path is provided to enhance the heat shielding effect.

  FIG. 2 is a perspective view of the evaporation source 1.

  The evaporation source 1 is formed so as to protrude from the laterally long diffusion part 27 with the introduction part 28 arranged in a lateral direction. The evaporation port 8 is provided by forming a slit-like opening narrow in the lateral direction at the tip of each of the evaporation port forming projections 28.

  By making the volume of the horizontally long diffusion part 27 sufficiently larger than the opening area of the evaporation port 8 from which the evaporated particles are ejected, the evaporated particles heated by the crucible 26 are diffused by the horizontally long diffusion part 27 and the pressure becomes uniform. Thus, the ejection pressure at which the evaporated particles from the evaporation port 8 of each introduction section 28 are ejected is configured to be uniform.

  In addition, the protruding length of the introducing portion 28 provided with the evaporation port portion 8 at the tip and protruding toward the substrate 4 is longer than the width of the introducing portion 28 in the lateral direction perpendicular to the relative movement direction of the substrate 4. As a result, the directivity of the evaporation particles in the lateral direction orthogonal to the relative movement direction of the substrate 4 is enhanced, and at the same time, the evaporation port portion 8 is provided with a wide opening in the relative movement direction with respect to the substrate 4, thereby evaporating the evaporation rate. Therefore, the vapor deposition apparatus is configured to have a high productivity.

  Further, as shown in FIG. 3, the introduction portion 28 may be arranged in the horizontally long diffusion portion 27. At this time, the evaporation material adheres to the heat shield portion 19, so that the evaporation port portion It is desirable not to arrange the heat shield 19 between the eight.

  Furthermore, the evaporation source 1 is formed of a material having a linear expansion coefficient smaller than that of stainless steel, thereby suppressing the film formation pattern shift due to the position shift of the evaporation port 8.

  Even if the evaporation source 1 is formed of stainless steel or a material having a larger linear expansion coefficient than stainless steel, the linear expansion coefficient should be taken into account when one kind of film-determined material is used. The dimensions of the evaporation source 1 may be designed. However, when the film forming material is changed, the evaporation temperature of the material also changes, and the set temperature region of the evaporation source 1 expands accordingly. In order to suppress the change in the amount, it is desirable that the evaporation source 1 is made of a material having a small linear expansion coefficient.

For example, when the evaporation source 1 is formed of SUS304 (linear expansion coefficient: about 1.8 × 10 ⁻⁵ / ° C.) and titanium having a small linear expansion coefficient (linear expansion coefficient: about 8.4 × 10 ⁻⁶ / ° C.). ) Were compared. If the length of the evaporation source 1 in the lateral direction orthogonal to the relative movement direction of the substrate 4 is 2500 mm and the temperature change at the time of changing the material is ± 50 ° C., the amount of change in thermal expansion when the evaporation source 1 is formed of SUS304 is It is about 2.3 mm. However, when the evaporation source 1 is made of titanium, the amount of change in thermal expansion can be suppressed to about 1.1 mm. Therefore, in this case, when the evaporation source 1 is configured with a linear expansion coefficient containing titanium of 8.5 × 10 ⁻⁶ / ° C. or less, the amount of change in thermal expansion is 1 mm or more than that in which the evaporation source 1 is made of stainless steel. Can be suppressed.

  However, a material having a small linear expansion coefficient is expensive, and it is often difficult to process the large-sized evaporation source 1 as a whole, and the physical properties such as reaction with the film forming material are not known. There is.

  In order to solve the above-described problem, in the second embodiment, the support part 31, the erection part 32, and the flexible pipe 30 are provided to suppress the positional deviation of the film formation pattern.

  FIG. 3 is a perspective view of the second embodiment in which the evaporating source 1 is provided with the support portion 31, the erection portion 32, and the flexible piping 30.

  Specifically, the evaporation source 1 is thermally expanded in the relative movement direction of the substrate 4 because the film formation pattern is not displaced and the film thickness of the vapor deposition film is slightly changed. Although it is possible to make the film thickness uniform by adjusting the slit length with respect to the relative movement direction, if the evaporation port 8 thermally expands in the lateral direction perpendicular to the relative movement direction of the substrate 4, the film formation pattern is displaced. The positional deviation of the evaporation port 8 due to the lateral thermal expansion must be suppressed. However, when the evaporation source 1 is heated, not only the whole is thermally expanded, but also unexpected thermal expansion such as twisting and distortion occurs.

  In order to solve this problem, the divided diffusion portions 27A of the horizontally long diffusion portions 27 arranged in a plurality of rows in the horizontal direction orthogonal to the relative movement direction of the substrate 4 are connected by a flexible pipe 30 that expands and contracts in the horizontal direction. The center portion of each divided diffusion portion 27A is fixed by superposing it in a sandwiched state from the front and rear in the relative movement direction of the substrate 4 at the midpoint position of each divided diffusion portion 27A or by erection in this relative movement direction. The fixed support.

  For example, as shown in FIG. 4, the pair of support portions 31 are fixed to positions sandwiching the front and rear of the central portion (substantially midpoint position) of each divided diffusion portion 27A, and the central portion of each divided diffusion portion 27A is supported. By installing the installation part 32 between the support parts 31, the direction of thermal expansion is limited to the horizontal direction, and thus, the support parts 31 in the horizontal direction perpendicular to the relative movement direction of the substrate 4 are installed between the support parts 31. By providing the erected portion 32, the amount of thermal expansion of the portion fixed by the support portion 31 of each divided diffusion portion 27A arranged side by side in a direction orthogonal to the relative movement direction of the substrate 4 is the crucible of the evaporation source 1. 26 and the thermal expansion amount of the erection part 32 at a lower temperature than the divided diffusion part 27A. In addition, the divided diffusion parts 27A are connected by a flexible pipe 30 that can be expanded and contracted in a transverse direction perpendicular to the relative movement direction, and the flexible pipe 30 absorbs thermal stress during heating of the evaporation source 1 and expands and contracts. Even when the horizontally long diffusion portion 27 is divided in the lateral direction orthogonal to the relative movement direction of 4 and a plurality of the divided diffusion portions 27A are arranged in parallel, the plurality of evaporation port portions 8 provided in the divided diffusion portion 27A are not in the horizontal direction. It is possible to suppress displacement in the direction and to perform deposition with higher accuracy.

  To explain further, by supporting and fixing each divided diffusion portion 27A with the support portion 31, the amount of thermal expansion at the fixed position of the central portion of this divided diffusion portion 27A is constructed between the front portions and the rear portions of this support portion 31. The amount of thermal expansion of the erection part 32 is reduced, and since this erection part 32 has a lower temperature than the crucible 26 and the divided diffusion part 27A of the evaporation source 1, the thermal expansion amount can be reduced. If the material is made of a material having a small linear expansion coefficient, the amount of thermal expansion can be further reduced, and this positional displacement can be further prevented and vapor deposition can be performed with high accuracy.

  In addition, as shown in FIG. 5, it is possible to lower the temperature by providing the temperature control mechanism 9 in the erection part 32, and not only can suppress the change amount of the thermal expansion amount when changing the material, but also the erection part Since the temperature of 32 becomes uniform, thermal expansion in an unexpected direction can be suppressed. Although not shown, the support portion 31 may also be provided with the temperature control mechanism 9 at the same time.

  The illustrated temperature control mechanism 9 has a configuration in which a medium path 9A for circulating a cooling medium is disposed so as to surround the erection unit 32 and the heat exchange unit 20A is provided.

For example, the evaporation source 1 formed with SUS304 (linear expansion coefficient: about 1.8 × 10 ⁻⁵ / ° C.) is heated to 400 ° C., and the support portion 31 and the installation portion 32 are soaked to 100 ° C. by the temperature control mechanism 9. Suppose that The required length of the evaporation source 1 in the lateral direction orthogonal to the relative movement direction of the substrate 4 is 2500 mm, and it is composed of two 1230 mm divided diffusion sections 27A and 40 mm flexible piping 30. The evaporation source 1 is heated to 400 ° C. at room temperature. If the evaporation source 1 is a single horizontally long diffuser 27, the expansion is about 16.9 mm. However, the horizontally widened portion 27 is divided into two parts, and the center position of each divided diffuser 27A is exactly the same. When the center position is fixed by the support portion 31, the amount of thermal expansion between the midpoint positions of each divided diffusion portion 27A is the amount of thermal expansion at 100 ° C., and the remaining portion is the amount of thermal expansion at the evaporation source temperature. Thus, the amount of thermal expansion of each divided diffusion portion 27A is about 1.7 mm.

  Further, as shown in FIG. 6, by inserting a thermal insulator 33 between the horizontally long diffusion portion 27 and the support portion 31 and between the support portion 31 and the installation portion 32, the heat generated when the evaporation source 1 is heated is installed in the installation portion. Since it is difficult to conduct to 32 and the temperature rise of the erection part 32 is also suppressed accordingly, the thermal expansion amount of the erection part 32 is further suppressed and is supported by the support part 31 of the laterally long diffusion part 27 (divided diffusion part 27A). The amount of thermal expansion in the lateral direction orthogonal to the relative movement direction of the substrate 4 is suppressed. The thermal insulator 33 shown in FIG. 5 is an insertion member formed of a material having low thermal conductivity, and the support portion 31 is supported and fixed to each divided diffusion portion 27A via the thermal insulator 33. .

  Furthermore, if the temperature control mechanism 9 is provided in the erection part 32 or both of the erection part 32 and the support part 31, an even better vapor deposition apparatus is obtained.

  In order to solve the above-described problems, the third embodiment is configured in the same manner as in the second embodiment, and the support portion 31 and the erection portion 32 are smaller in linear expansion coefficient than the laterally long diffusion portion 27 (divided diffusion portion 27A). By forming and connecting the flexible piping 30 between the divided diffusion portions 27A constituting the horizontally long diffusion portion 27, the film pattern is prevented from being displaced.

  FIG. 7 is a perspective view in which the evaporation source 1 is provided with a support portion 31, a erection portion 32, and a flexible pipe 30 having a small linear expansion coefficient.

  The evaporation source 1 has a support portion 31 having a linear expansion coefficient smaller than that of the horizontally long diffusion portion 27 fixed to each horizontally long diffusion portion 27 of the horizontally long diffusion portion 27, and is constructed with the same material as the support portion 31 between the support portions 31. By mounting the portion 32 and connecting the divided diffusion portions 27A with the flexible pipe 30, it is possible to suppress the positional deviation of the film formation pattern due to the positional deviation of the evaporation port portion 8 provided in each divided diffusion portion 27A. It is configured as follows.

  Specifically, a plurality of divided diffusion portions 27A arranged side by side in the lateral direction orthogonal to the relative movement direction of the substrate 4 are supported and fixed by the support portions 31 from the front and rear in the relative movement direction of the substrate 4 as in the second embodiment. The direction of thermal expansion is limited to the lateral direction, and the support portion 31 is made of a material having a smaller linear expansion coefficient than the divided diffusion portion 27A. Further, by installing a bridge portion 32 between the support portions 31 arranged side by side in the horizontal direction orthogonal to the relative movement direction of the substrate 4, the support portion of each divided diffusion portion 27 </ b> A in the horizontal direction orthogonal to the relative movement direction of the substrate 4. The amount of movement due to thermal expansion at the position fixedly supported on 31 is configured to be the amount of movement due to thermal expansion of the erection part 32.

  In the present embodiment, the erection part 32 is also formed of a material having a smaller linear expansion coefficient than the divided diffusion part 27A, and the amount of movement due to this thermal expansion is taken as the thermal expansion amount of the erection part 32 having a smaller linear expansion coefficient. By connecting each divided diffusion part 27A of the part 27 with a flexible pipe 30 that can be expanded and contracted in the transverse direction perpendicular to the relative movement direction, the flexible pipe 30 absorbs thermal stress during heating of the evaporation source 1 and expands and contracts. Furthermore, it is configured so that the positional deviation of the film formation pattern due to the positional deviation of the evaporation port portion 8 provided in each divided scattering portion 27A can be suppressed. In other words, even if a plurality of horizontally long diffusion portions 27 are arranged in the horizontal direction orthogonal to the relative movement direction of the substrate 4, the positional relationship between the divided diffusion portions 27A does not change, and vapor deposition can be performed with higher accuracy. ing.

  Moreover, since the length of the division | segmentation spreading | diffusion part 27A which comprises one horizontally long spreading | diffusion part 27 arranged in multiple numbers in the horizontal direction orthogonal to the relative movement direction of the board | substrate 4 becomes short, the thermal expansion amount Can be suppressed. For example, the thermal expansion amount of each divided diffusion portion 27A is smaller when the horizontally long diffusion portion 27 shown in FIG. 8 is divided into four than when the horizontally long diffusion portion 27 shown in FIG. 7 is divided into two.

Specifically, the evaporation source 1 is SUS304 (linear expansion coefficient: about 1.8 × 10 ⁻⁵ / ° C.), and the support portion 31 is Kovar (linear expansion coefficient: about 5.0 × 10 ⁻⁶ / ° C.). Form. Flexible when the required length of the evaporation source 1 in the lateral direction orthogonal to the relative movement direction of the substrate 4 is 3100 mm, the temperature change of the evaporation source 1 when changing the evaporation material is ± 100 ° C., and the laterally long diffusion portion 27 is divided into two If the length of the pipe 30 is 40 mm, the length of the flexible pipe 30 when the horizontally long diffusion part 27 is divided into four parts is 20 mm, and the position of the support part 31 is the substantially middle point position of each divided diffusion part 27A, the thermal expansion changes The amount is different between the erection parts 32 having a small linear expansion coefficient and at both ends where the erection part 32 is not present, and the total thermal expansion change amount when the horizontally long diffusion part 27 is divided into two is about 3.5 mm. The total amount of change in thermal expansion when divided into four is about 2.5 mm.

  In addition, the optimum support position for reducing the fluctuation amount of the thermal expansion of the support portion 31 that supports the horizontally long diffusion portion 27 is the linear thermal expansion coefficient of the material forming the horizontally long diffusion portion 27, and the erection portion 32 is formed. It varies depending on the linear expansion coefficient of the material and the number of divisions of the horizontally long diffusion portion 27. For example, the larger the difference between the values of the linear thermal expansion coefficient of the material forming the horizontally long diffusion portion 27 and the linear expansion coefficient of the material forming the erection portion 32, the greater the position at the midpoint of the divided divided diffusion portion 27A. It is better to support.

  Further, since the support portion 31 and the erection portion 32 are provided with the temperature control mechanism 9, it becomes possible to lower the temperature and further suppress the amount of thermal expansion, for example, the support portion 31 and the erection portion 32. By setting the temperature to about 260 ° C. or less, an invar material having a small linear expansion coefficient can be used by the support part 31 and the erection part 32.

  Further, as shown in FIG. 9, when the position of the evaporation port portion 8 is shifted in the lateral direction perpendicular to the relative movement direction of the substrate 4, the positional relationship with the vapor deposition mask changes, so that the vapor deposition film has a desired film formation pattern. The amount of deviation of the vapor deposition pattern that deviates from is determined by the following equation (2).

  (ΔX (P + 2SH) = amount of displacement of the vapor deposition film in the horizontal direction, G = a distance between the substrate and the vapor deposition mask, TS = a distance between the evaporation port portion and the vapor deposition mask, ΔX (φx) = a displacement amount of the evaporation port portion in the horizontal direction)

  Specifically, assuming that the gap G is 1 mm, TS is 100 mm, and the evaporation port portion movement amount ΔX (φx) in the horizontal direction of the evaporation port portion 8 is 1 mm, the lateral displacement ΔX (P + 2SH) of the evaporation pattern. Is 0.01 mm.

  Further, when the substrate 4 and the vapor deposition mask 2 are arranged in a separated state and formed into a film, as shown in FIG. 10, shadows (SH), which are inclined portions at both end portions of the vapor deposition film, are generated. When the gap between the substrate 4 and the vapor deposition mask 2 is G, the lateral opening width of the evaporation port 8 is φx, and the distance between the evaporation port 8 and the vapor deposition mask 2 is TS, the following equation (1) is satisfied. In order to prevent the shadow SH from reaching the interval PP between the adjacent vapor deposition films 1, the gap G can be set large by setting the opening width φx of the evaporation port 8 small.

  Specifically, when the shadow SH is set to 0.03 mm or less, TS is set to 100 to 300 mm, and φx is set to 0.5 to 3 mm, the gap G can be secured to 1 mm or more.

  For example, if TS is 100 mm and φx is 3 mm, G is 1 mm, and if TS is 100 mm and φx is reduced to 0.6 mm, G can be 5 mm. Further, when TS is 300 mm, φx is 3 mm, and G is 1 mm, SH can be reduced to 0.01 mm, and a higher-definition film forming pattern may be supported.

  Further, the evaporation port 8 of the evaporation source 1 is formed in a slit shape that is long in the relative movement direction of the substrate 4 and narrow in the lateral direction perpendicular thereto, so that the substrate 4 and the evaporation mask 2 are vapor-deposited in a separated state. However, the evaporation rate can be increased while suppressing the shadow SH.

  Further, the evaporation port 8 of the evaporation source 1 is formed in a slit shape that is long in the relative movement direction of the substrate 4 and narrow in the lateral direction perpendicular thereto, so that even when the substrate 4 and the mask are deposited in a separated state, The evaporation rate can be increased while suppressing the shadow SH.

  In addition, this invention is not restricted to Examples 1-3, The concrete structure of each component can be designed suitably.

DESCRIPTION OF SYMBOLS 1 Evaporation source 2 Deposition mask 3 Mask opening part 4 Substrate 5 Restriction opening part 6 Mask holder 8 Evaporation opening part
9 Temperature control mechanism
19 Thermal block
26 Evaporating particle generator
27 Horizontal diffuser
27A Split diffusion unit
28 Introduction
30 Flexible piping
31 Bearing
32 erection part
33 thermal insulation

Claims (16)

The film forming material evaporated from the evaporation source is deposited on the substrate through the mask opening of the vapor deposition mask, and a vapor deposition film having a film formation pattern defined by the vapor deposition mask is formed on the substrate. In the vapor deposition apparatus, a limiting opening is provided between the evaporation source and the substrate disposed opposite to the evaporation source to limit a scattering direction of evaporated particles of the film forming material evaporated from the evaporation source. A mask holder having a scattering restricting portion, and attaching the vapor deposition mask arranged in a separated state with the substrate to the mask holder, and attaching the substrate to the mask holder provided with the vapor deposition mask; The evaporation source is configured to be movable relative to the evaporation source while maintaining a separation state from the vapor deposition mask. The evaporation source is generated from the evaporation particle generation unit in the evaporation particle generation unit that heats the film forming material. Said oblong diffusion portion evaporation particles are uniformly the spread pressure provided, a structure in which a plurality juxtaposed steam Hatsuguchi portion in the lateral direction orthogonal to the relative moving direction of the substrate in the horizontal diffusion portions, the evaporation source Is formed of a material having a linear expansion coefficient smaller than that of stainless steel, and the evaporation source includes divided diffusion portions that divide and form the horizontally long diffusion portions in a lateral direction perpendicular to the relative movement direction of the substrate. The laterally long diffusion part is configured by providing a flexible pipe that can expand and contract in the lateral direction between the divided diffusion parts, and is installed between the support part fixed to the divided diffusion part of the horizontal diffusion part and the support part. A vapor deposition apparatus characterized in that a construction part is provided. The vapor deposition apparatus according to claim 1, wherein the linear expansion coefficient of the material forming the evaporation source is 8.5 × 10 ⁻⁶ / ° C. or less. The evaporation source has a plurality of the divided diffusion portions that constitute the horizontally long diffusion portion arranged in the horizontal direction, and the horizontal diffusion portions are configured by connecting the divided diffusion portions of the horizontally long diffusion portions with the flexible pipe, In the divided diffusion part of the horizontally long diffusion part, the thermal expansion movement of the center part of the fixed divided diffusion part is suppressed by fixing the substrate in a sandwiched state from before and after in the relative movement direction or in a construction state in the relative movement direction. said bearing that, juxtaposed in the lateral direction perpendicular to the relative movement direction, any claim 1, characterized in that it has a structure in which bridged the bridging portion between the transverse direction of the support portion The vapor deposition apparatus of Claim 1 . The vapor deposition apparatus according to any one of claims 1 to 3 , wherein a temperature control mechanism is provided in at least one of the support part or the installation part. Between the Horizontal diffusion portion and the bearing, or between at least one of between the installing portion and the support portion, according to any one of claims 1 to 4, characterized in that the inserted heat insulator Vapor deposition equipment. The vapor deposition apparatus according to any one of claims 1 to 5 , wherein the erection part or both the erection part and the support part are made of a material having a smaller linear expansion coefficient than stainless steel. The support portion is formed of a material having a smaller linear expansion coefficient than that of the divided diffusion portion of the horizontally long diffusion portion, and is fixed to a central portion in a horizontal direction orthogonal to the relative movement direction of the substrate of the divided diffusion portion. A plurality of the horizontal pipes are arranged side by side, and the flexible pipes connecting the divided diffusion parts are configured to be positioned between the support parts, and the installation part provided between the support parts is formed of the horizontally long diffusion part. The vapor deposition apparatus according to claim 6 , wherein the vapor deposition apparatus is formed of a material having a smaller linear expansion coefficient than the divided diffusion portion. The vapor deposition apparatus according to any one of claims 6 and 7 , wherein the erection part or both the support part and the erection part are formed of an invar material. Deposition apparatus according to any one of claims 1-8, characterized in that it has one or more juxtaposed the evaporation source in a lateral direction orthogonal to the relative moving direction of the substrate. Wherein the Horizontal diffusion part at least one peripheral or around the evaporation port of, according to any one of claims 1 to 9, characterized in that disposed heat blocking section for blocking the heat of the evaporation source Vapor deposition equipment. The vapor deposition according to any one of claims 1 to 10 , wherein the evaporation port portion of the evaporation source has a slit shape that is long in a relative movement direction of the substrate and narrow in a lateral direction perpendicular thereto. apparatus. Vaporized particles diffused in the horizontal spreading section, according to claim 1 to 11 for the introduction section for scattering with a directivity when ejected from the evaporation port unit, characterized by being arranged in the horizontal spreading unit The vapor deposition apparatus of any one of these. The plurality of evaporation port portions are provided on the front end surface of the introduction portion on the substrate side, and the introduction length of the introduction portion toward the substrate side is the introduction portion in the lateral direction orthogonal to the relative movement direction of the substrate. The vapor deposition apparatus according to claim 12 , wherein the vapor deposition apparatus is longer than the width of the film. The vapor deposition apparatus according to any one of claims 12 and 13 , wherein the introduction portion is disposed so as to protrude from the laterally long diffusion portion toward the substrate side. Wherein the deposition material, the deposition apparatus according to any one of claims 1 to 14, characterized in that an organic material. Claim 1 using a vapor deposition device according to any one of 15, the deposition method and forming a deposited film of a deposition pattern defined by the deposition mask on the substrate.

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