JP5751983B2 - Semiconductor light emitting element array and vehicle lamp - Google Patents

Description

  The present invention relates to a semiconductor light emitting element array and a vehicular lamp using the semiconductor light emitting element array.

  LED elements for use in vehicle headlamps and lighting are required to have a high output. However, simply increasing the element area will increase the drive current, and allow the current to flow uniformly. Therefore, it is known that the LED array is divided into a plurality of LED elements and connected in series (for example, see Patent Document 1).

  In applications such as vehicle headlamps, horizontally long LED elements are required. However, if the number of LED element divisions is increased, the proportion of non-light emitting portions between the elements increases. Therefore, in order to reduce the number of divided LED elements, the shape of each LED element becomes horizontally long.

  6A is a schematic plan view showing a conventional LED array 200, and FIG. 6B is a simplified cross-sectional view of the LED array 200 shown in FIG. 6A.

  Conventional LED array 200 is generally one in which four nitride semiconductor light emitting elements (LED elements) 201 are arranged on a substrate and connected in series on an insulating support substrate.

  Each LED element 201 includes a GaN-based light emitting unit 202 including an n-type GaN layer 221, an active layer 222, and a p-type GaN layer 223, a p-side electrode 212 formed on the back surface of the light emitting unit 202, and the light emitting unit 202. An extraction electrode (first wiring layer) 211 arranged in parallel with a certain interval on the right short side and a surface of the light emitting unit 202 arranged in parallel with the long side of the light emitting unit 202, the n-type GaN layer 221 and the extraction electrode 211 and a lead electrode (second wiring layer) 208 that connects to 211. The LED elements 201 adjacent to the left and right are connected to the n-type GaN layer 221 of the left element and the p-type GaN layer 223 of the right element by forming the extraction electrode 211 of the left element on the p-side electrode 212 of the right element. Has been. Note that the hatching applied to the light emitting portion 202 in FIG. 6A represents a light emission luminance distribution, which indicates that the luminance increases as the hatching density increases.

JP 2001-156331 A

  As shown in FIG. 6, when the extraction electrode 211 is arranged in parallel to the short side of the LED element 201 and the extraction electrode 208 on the n-type GaN layer 221 is arranged in parallel to the long side of the LED element 201, for example, the width is 10 μm. As a result, the length of the lead electrode 208 is long, the wiring resistance increases, the injection current decreases from the right power supply side to the left side, and a large light emission luminance distribution is formed.

  When a headlamp or the like is configured using such an LED array 200 composed of the LED elements 201, large luminance unevenness occurs in the irradiated image.

  An object of the present invention is to provide a semiconductor light emitting element array in which the formation of light emission distribution is suppressed.

  Another object of the present invention is to provide a vehicular lamp that suppresses uneven brightness of an irradiated image.

  According to one aspect of the present invention, there is provided a semiconductor light emitting element array in which a plurality of semiconductor light emitting elements are formed along a first direction on a substrate that is long in a first direction, Each of the electrode layer formed on the substrate, the p-type semiconductor layer formed on the electrode layer and electrically connected to the electrode layer, and the active layer formed on the p-type semiconductor layer And an n-type semiconductor layer formed on the active layer, and a rectangular semiconductor light emitting layer whose planar shape is long in the first direction, along one long side of the semiconductor light emitting layer, A first wiring layer formed in parallel with a long side; and extends from the first wiring layer in a short side direction of the semiconductor light emitting layer, and electrically on the surface of the semiconductor light emitting layer with the n-type semiconductor layer In the adjacent semiconductor light emitting device, the second wiring layer connected The semiconductor light-emitting device array, wherein the first wiring layer along different length sides of the semiconductor light-emitting layer is formed is provided.

  According to another aspect of the present invention, at least two semiconductor light-emitting element arrays according to claim 1 or 2 arranged so that a luminance distribution of each irradiation image is in a mirror-inverted state, and the at least There is provided a vehicular lamp having an optical system for irradiating irradiation images of two semiconductor light emitting element arrays so as to overlap each other on an irradiation surface.

  ADVANTAGE OF THE INVENTION According to this invention, the semiconductor light-emitting element array which suppressed formation of light emission distribution can be provided.

  Moreover, according to this invention, the vehicle lamp which suppressed the brightness nonuniformity of an irradiation image can be provided.

1 is a schematic plan view, a circuit diagram, and a cross-sectional view of an LED array 100 and an LED element 101 according to an embodiment of the present invention. It is a conceptual diagram showing the structure of the vehicle lamp (headlamp) 50 incorporating the LED array 100 by the Example of this invention. It is a schematic sectional drawing for demonstrating the manufacturing method of the LED array 100 by the Example of this invention. It is a schematic sectional drawing for demonstrating the manufacturing method of the LED array 100 by the Example of this invention. It is a schematic sectional drawing for demonstrating the other manufacturing method of the LED array 100 by the Example of this invention. It is the schematic plan view and sectional drawing of the LED array 200 by a prior art example.

  FIG. 1A is a schematic plan view of an LED array 100 according to an embodiment of the present invention, and FIG. 1B is an equivalent circuit diagram of the LED array 100. FIG. 1C is a schematic plan view of the LED elements 101 a and 101 b constituting the LED array 100. FIG. 1D is a simplified cross-sectional view of the LED array 100 between the straight lines ab in FIG.

  In the LED array 100 according to the embodiment of the present invention, four nitride semiconductor light emitting elements (LED elements) 101 (101a and 101b) are arranged on a support substrate 30 on which an insulating layer 7 is formed and connected in series. . Each LED element 101 includes a GaN-based light emitting part (device structure layer) 2 composed of an n-type GaN layer 21, an active layer 22, and a p-type GaN layer 23, and is formed on the back surface of the light emitting part 2. A p-side electrode 12 exposed on the long side, a lead electrode (first wiring layer) 11 arranged in parallel with the long side opposite to the long side on which the p-side electrode is exposed, and a predetermined distance; An extraction electrode (second wiring layer) 8 disposed on the surface of the light emitting unit 2 in parallel with the short side of the light emitting unit 2 and connecting the n-type GaN layer 21 and the extraction electrode (first wiring layer) 11 is provided. Have.

  The individual LED elements 101 are connected in series with the LED elements 101 adjacent to the left and right, respectively, and the lead electrode 11 of the LED element 101a is electrically connected to the p-side electrode 12 of the LED element 101b located on the left side. The p-side electrode 12 of the LED element 101a is electrically connected to the lead electrode 11 of the LED element 101b located on the right side. The p-side electrode 12 of the LED element 101a and the lead electrode 11 of the LED element 101b located at the end of the LED array 100 are connected to the power supply pad 13, respectively.

  In the LED element 101 a, an extraction electrode 11 that is a power feeding side is arranged on the upper long side of the light emitting unit 2 in parallel with the long side, and the extraction electrode 8 extends over the n-type GaN layer 21 from the short side of the light emitting unit 2. Therefore, the injection current gradually decreases from the top to the bottom in the figure. Therefore, it has a light emission luminance distribution in which the upper side is bright and the lower side is dark. However, since the extraction electrode 8 is arranged in parallel to the short side of the light emitting portion 2, the length of the extraction electrode 8 is shorter than that of the conventional example shown in FIG. The emission luminance distribution can be reduced. In the figure, the hatching applied to the light emitting unit 2 represents a light emission luminance distribution, and the luminance increases as the hatching density increases.

  In contrast to the LED element 101 a, the LED element 101 b has a lead electrode 11 on the lower long side of the light emitting unit 2 parallel to the long side and disposed on the power supply side, and extends from the lead electrode 11 onto the n-type GaN layer 21. Since 8 is arranged in parallel to the short side of the light emitting section 2, the injection current gradually decreases from the bottom to the top in the figure. Therefore, it has a light emission luminance distribution in which the lower side is bright and the upper side is dark. However, also in the LED element 101b, since the extraction electrode 8 is arranged in parallel to the short side of the light emitting portion 2, the length of the extraction electrode 8 is shorter than that of the conventional example shown in FIG. Can be kept low, and the light emission luminance distribution can be reduced.

  That is, on the light emitting surface of the LED element 101a, a luminance distribution is formed which has a peak (maximum luminance portion) on the extraction electrode 11 side and gradually decreases in the downward direction (H direction) in the figure as the distance from the extraction electrode 11 increases. . A luminance distribution similar to that of the LED element 101a is formed on the light emitting surface of the LED element 101b. However, since the lead electrode 11 is formed along the lower long side in the LED element 101b, Conversely, a luminance distribution is formed which has a peak on the lower long side and gradually decreases in the upward direction.

  The LED element 101a and the LED element 101b have the same structure except for the electrode pattern such as the arrangement of the p-side electrode 12, the extraction electrode 11, and the extraction electrode 8, and the electrode pattern of the LED element 101a is vertically The LED element 101b is inverted.

  LED elements for use in vehicle headlamps and lighting are required to have a high output. However, simply increasing the element area will increase the drive current, and allow the current to flow uniformly. In this embodiment, a plurality of LED elements 101 are arrayed to form an LED array 100. Moreover, in order to let the same electric current value flow through each LED element 101, series connection is preferable.

  Further, when used for a vehicle headlamp, it is required to illuminate the vicinity of the ground surface, and the LED array 100 preferably has a shape that is long in the lateral direction (long in the W direction in the figure). The dimensions of the LED array 100 are set to, for example, a width of 5 mm or more and a height of 1 mm or less. When the four LED elements 101 are arrayed, it is efficient to make the shape of each LED element 101 long in the horizontal direction and short in the vertical direction (long in the W direction and short in the H direction in the figure). .

  For such a horizontally long LED element 101, as shown in FIG. 6, when an extraction electrode 208 having a narrow line width on the light emitting surface, for example, a width of about 10 μm, is arranged in parallel to the long side, The ratio of the wiring resistance of the extraction electrode 208 (for example, about 10 μm) having a narrow line width to the resistance is increased, the current distribution in the semiconductor stack 202 along the length direction of the extraction wiring 208 is increased, and a large emission luminance distribution is obtained. Will be formed.

  Therefore, in the embodiment of the present invention, as shown in FIGS. 1A and 1C, a wide lead electrode (first wiring layer) 11 having a line width of 20 μm to 200 μm (preferably about 40 μm) is provided. An electrode configuration (electrodes) arranged parallel to the long sides of each LED element 101, and having a narrow line width extraction electrode (second wiring layer) 8 arranged parallel to the short sides to reduce current distribution by reducing the electrode length Pattern). By adopting such an electrode pattern, it is possible to reduce the wiring resistance by shortening the length of the extraction electrode 8, and to greatly reduce the light emission luminance distribution of each LED element 101.

  By adopting this electrode pattern, the luminance distribution in each LED element 101 is greatly reduced. However, when this LED pattern is simply combined to form an LED array 100 and incorporated in a headlamp or the like, it depends on the headlamp or the like. Irradiation images are also distributed, resulting in uneven brightness. In order to reduce this luminance unevenness, in this embodiment, as shown in FIG. 1A, the emission luminance distribution is made different between adjacent LED elements 101 (for example, as shown in the figure, the emission luminance distribution is increased and decreased). Reverse).

  That is, an extraction electrode (first wiring layer) 11 is arranged on one long side (the lower long side in FIGS. 1A and 1C) of the light emitting unit 2, and the one long side to the other long side. An LED element 101a having an extraction electrode (second wiring layer) 8 extending toward the vicinity of the long side, and an extraction electrode (first wiring layer) 11 on the other long side (upper long side in FIG. 1) side. The LED elements 101b having the lead electrodes (second wiring layers) 8 that are arranged and extend from the other long side toward the vicinity of the one long side are alternately arranged in the long side direction of the LED array 100.

  By alternately arranging the LED elements 101a and 101b in this manner, the adjacent LED elements 101a and 101b invert the light emission luminance distribution in the vertical direction, and the light emission luminance distribution (luminance unevenness) as the LED array 100 is reversed. Reduced.

  Further, since the extraction electrode 11 is arranged along the long side of the LED element 101, the distance g between the LED elements 101 is set to about 30 μm, for example, as compared with the prior art arranged along the short side. Can be narrowed. Therefore, a decrease in luminance in the area between the LED elements 101 can also be suppressed.

  FIG. 2 is a conceptual diagram showing the configuration of a vehicular lamp (headlamp) 50 incorporating the LED array 100 according to the embodiment of the present invention.

  FIG. 2A shows an example in which an irradiation lens 105 is prepared for each of the two LED arrays 100 as the irradiation optical system 51. The irradiation lens 105 is arranged so that the light source images 106 of each of the at least two LED arrays 100 whose electrode patterns are reversed left and right are overlapped on a virtual vertical screen (irradiation surface) 107 facing the front end of the vehicle. Is set. As a result, one LED array 100 is arranged side by side with the LED elements 101b, 101a, 101b, and 101a as shown in FIG. 1A, and the other is reversed to the left shown in FIG. 1A. To LED elements 101a, 101b, 101a, 101b, the irradiation image of the LED element 101a having a luminance distribution that gradually decreases from top to bottom, and conversely, the luminance distribution that gradually increases from top to bottom And the irradiation image of the LED element 101b having the overlap on the irradiation surface 107. Therefore, it is possible to further reduce luminance unevenness.

  In the irradiation optical system 51, the irradiation lens 105 may be shared by the plurality of LED arrays 100 by using a multi-reflector (reflection surface) 103 as shown in FIG.

  The headlamp 50 shown in FIG. 2B includes at least two LED arrays 100 in which the respective electrode patterns are reversed left and right, and phosphor layers (wavelength conversion) disposed so as to cover the light emitting surfaces of the two LED arrays 100, respectively. A light source 102 composed of a layer) 100a, and an irradiation optical system 51 including a reflection surface 103, which is a multi-reflector partitioned into a plurality of small reflection regions, a shade 104, and an irradiation lens 105.

  As shown in FIG. 2B, the light source 102 is arranged so that the irradiation direction (light emitting surface) faces upward, and the reflecting surface 103 has a first focal point set near the light source 102 and a second focal point shaded. This is a spheroid reflecting surface set in the vicinity of the upper edge of 104, and is arranged so as to cover a range from the side of the light source 102 to the front so that light from the light source 102 enters.

  As shown in FIG. 2B, the reflecting surface 103 irradiates the light source images 106 of the plurality of LED arrays 100 of the light source 102 to the front of the vehicle, and is on a virtual vertical screen (irradiation surface) 107 facing the front end of the vehicle. In addition, the light source images 106 of the two LED arrays 100 in which the respective electrode patterns are horizontally reversed are irradiated to the same position and configured to overlap each other.

  The shade 104 is a light-shielding member for shielding a part of the reflected light from the reflective surface 103 to form a cut-off line suitable for a headlamp, with the upper edge positioned in the vicinity of the focal point of the irradiation lens 105. It is disposed between the irradiation lens 105 and the light source 102.

  The irradiation lens 105 is disposed on the front side of the vehicle and irradiates the irradiation surface 107 with the reflected light from the reflection surface 103.

  As described above, by using the two LED arrays 100 in which the electrode pattern (luminance distribution) is reversed left and right (mirror image inversion), the headlamp 50 is configured so that the irradiation images overlap on the irradiation surface 107, thereby further increasing the luminance. Unevenness can be reduced.

  A method of manufacturing the LED array 100 according to an embodiment of the present invention will be described with reference to FIGS. 3 and 4 are schematic cross-sectional views taken along the line ab in FIG. 1, and therefore, only one nitride semiconductor light emitting element (LED element) 101a is shown in the figure. Two LED elements 101a and 101b are alternately arranged and formed simultaneously on the same substrate. The following manufacturing method is merely an example, and the present invention is not limited to this.

  First, as shown in FIG. 3A, a transparent substrate 1 made of sapphire is prepared, and a device structure layer (GaN-based light emitting portion) 2 made of a nitride semiconductor using a metal organic chemical vapor deposition (MOCVD) method. Form. Specifically, for example, after the sapphire substrate 1 is put into a MOCVD apparatus, thermal cleaning is performed, a GaN buffer layer 20 is grown, an n-type GaN layer 21 having a thickness of about 5 μm doped with Si or the like, and an InGaN quantum well. A GaN-based light emitting portion 2 including a multiple quantum well light emitting layer (active layer) 22 including layers and a p-type GaN layer 23 having a thickness of about 0.5 μm doped with Mg or the like is sequentially grown. Note that the scales of the cross-sectional views shown in FIGS. 3 and 4 are changed for convenience of explanation. The transparent substrate 1 is a single crystal substrate having a lattice constant capable of epitaxial growth of GaN, and is transparent to light having a wavelength of 362 nm which is the absorption edge wavelength of GaN so that the substrate can be peeled off by laser lift-off later. Selected from. In addition to sapphire, spinel, SiC, ZnO, or the like may be used.

Next, as shown in FIG. 3B, an Ag layer having a film thickness of 200 nm is formed on the surface of the device structure layer 2 (the surface of the p-type GaN layer 23) by an electron beam evaporation method, and is patterned by photolithography. A layer (first electrode layer) 3 is formed. Thereafter, an etching stop layer 4 made of SiO ₂ having the same film thickness as the p electrode layer 3 is formed on the device structure layer 2 (on the p-type GaN layer 23) around the p electrode layer 3 by using a sputtering method. The etching stop layer 4 functions as an etch stopper in an etching process described later with reference to FIG.

Next, a diffusion prevention layer 5 made of TiW having a thickness of 300 nm is formed in a region including the p electrode layer 3 and the etching stop layer 4 by sputtering. The diffusion prevention layer 5 is for preventing diffusion of the material used for the p electrode layer 3. When the p electrode layer 3 contains Ag, Ti, W, Pt, Pd, Mo, Ru, Ir, and these Can be used as the diffusion preventing layer 5. Subsequently, an insulating layer 7a made of SiO ₂ is formed on the diffusion prevention layer 5 by chemical vapor deposition (CVD) or the like, and a first adhesive layer made of Au having a thickness of 200 nm is formed thereon using a sputtering method. 6 is formed.

  Next, as shown in FIG. 3C, the device structure layer 2 is divided into a plurality of rectangular elements by using a dry etching method using a resist mask and chlorine gas. The side surface of the divided device structure layer 2 has a shape in which the cross-sectional area decreases upward.

Next, as shown in FIG. 3D, a support substrate 10 made of Si is prepared, and a second adhesive layer made of AuSn (Sn: 20 wt%) having a thickness of 1 μm is formed thereon using a resistance heating vapor deposition method. 9 is formed. The support substrate 10 is preferably made of a material having a thermal expansion coefficient close to that of sapphire (7.5 × 10 ⁻⁶ / K) or GaN (5.6 × 10 ⁻⁶ / K) and having high thermal conductivity. For example, Si, AlN, Mo, W, CuW, or the like can be used. The material of the first adhesive layer 6 and the material of the second adhesive layer 9 are Au-Sn, Au-In, Pd-In, Cu-In, Cu-Sn, Ag-Sn, Ag- that can be fusion bonded. A metal containing In, Ni—Sn, or the like, or a metal containing Au capable of diffusion bonding can be used.

  Next, as shown in FIG. 3 (E), the first adhesive layer 6 and the second adhesive layer 9 are brought into contact with each other, heated to 300 ° C. under a pressure of 3 MPa, held for 10 minutes, and then to room temperature. Fusion bonding is performed by cooling.

  Thereafter, the UV excimer laser light is irradiated from the back side of the sapphire substrate 1, and the buffer layer 20 is thermally decomposed, whereby the sapphire substrate 1 is peeled off by laser lift-off as shown in FIG. Note that another method such as etching may be used for peeling or removing the substrate 1.

  Next, as shown in FIG. 4A, a photoresist PR is formed so that the end portion of the device structure layer 2 is exposed. Thereafter, the edge of the device structure layer 2 exposed from the photoresist PR is etched by dry etching using chlorine gas until the etching stop layer 4 is exposed. As a result, as shown in FIG. 4B, the side wall of the device structure layer 2 has a tapered shape with a cross-sectional area that decreases upward when the support substrate 10 is faced down.

Next, as shown in FIG. 4C, a protective film (insulating film) 7b made of SiO ₂ is formed on the entire upper surface of the element formed in the above-described process by chemical vapor deposition (CVD) or the like, and thereafter The surface of the device structure layer 2 exposed by peeling off the transparent substrate 1 by etching a part of the protective film 7b formed on the device structure layer 2 using buffered hydrofluoric acid (the surface of the n-type GaN layer 21) To expose a part of

  Next, as shown in FIG. 4D, a 10 nm-thick Ti layer, a 300 nm-thick Al layer, and a 2 μm-thick Au layer are stacked in this order by electron beam evaporation and patterned by lift-off. As a result, a lead electrode (first wiring layer) 11 having a width of, for example, about 40 μm, parallel to the long side of the device structure layer 2 and a short side electrically connected to the long side of the device structure layer 2. A lead electrode (second wiring layer) 8 having a width of about 10 μm, for example, parallel to the side is simultaneously formed. The line width of the extraction electrode 11 is preferably 20 μm or more and 200 μm or less. The line width of the extraction electrode 8 is preferably 20 μm or less and 3 μm or more. The line width of the extraction electrode 11 is desirably wider than the line width of the extraction electrode 8.

  In the present embodiment, the extraction electrode 8 is formed parallel to the short side of the LED element 101 and perpendicular to the long side, but may not necessarily be parallel to the short side as long as it is not parallel to the long side.

  The extraction electrode 11 is formed adjacent to different long sides in adjacent elements. The extraction electrode 8 is electrically connected to a part of the surface of the device structure layer 2 (surface of the n-type GaN layer 21) exposed in the above-described process. The extraction electrode 11 and the extraction electrode 8 connected to the n-side (n-type GaN layer 21) are formed on the surface of the n-type GaN layer 21, so that the extraction electrode as shown in FIG. 11 is a comb-shaped planar shape with 11 as a base and the extraction electrode 8 as comb teeth.

  The position where the extraction electrode 11 is formed is desirably a region other than the device structure layer 2 so as not to prevent extraction of light emitted from the device structure layer 2. However, if the distance is too far from the device structure layer 2, the wiring resistance at the extraction electrode 8 increases, and therefore the distance between the long side of the device structure layer 2 and the extraction electrode 11 is more preferably within 50 μm. The extraction electrode 11 is electrically connected to the p-electrode layer 3 of an adjacent element, and a light emitting element array 100 in which a plurality of elements are connected in series is formed. In addition, when manufacturing several LED array 100 from one board | substrate, it breaks after scribe and performs element isolation.

  As shown in FIG. 5, the device structure layer 2 may be processed so that only one side of the long side becomes a slope extending outwards downward. In this case, in the photoresist forming step shown in FIG. 4A, a photoresist is formed so as to be exposed only on one side of the long side of the device structure layer. In the etching step shown in FIG. By using a dry etching method using chlorine gas, only one side of the long side of the structural layer 2 is processed into a shape in which only one side of the long side becomes a slope that spreads outward. The extraction electrode 8 is formed along a slope formed on one side of the long side. At this time, in the adjacent LED elements 101, the long sides on the different sides in the vertical direction are processed into slopes extending outwardly downward.

  As described above, according to the embodiment of the present invention, the wide lead electrode 11 is arranged in parallel to the long side of each LED element 101 to diffuse the current in the long side direction, and the narrow lead electrode 8 is arranged on the short side. Since the electrode pattern for injecting current in the short side direction with respect to the light emitting portion 2 is employed in parallel with the light emitting portion 2, the length of the lead electrode 8 is shortened to reduce the wiring resistance, and the light emission luminance of each LED element 101 The distribution can be greatly reduced.

  In addition, since the lead electrodes (first wiring layers) are arranged on the different long sides of adjacent LED elements, the emission luminance distribution in the vertical direction is alternately inverted, and the emission luminance distribution as the LED array is reduced. can do.

  In addition, since the lead electrode 11 is disposed along the long side of the LED element 101, the gap g between the LED elements 101 can be narrowed to suppress a decrease in luminance between the LED elements 101.

  Further, by using two LED arrays 100 in which the electrode pattern (luminance distribution) is reversed left and right (mirror image inversion), the headlamp 50 is configured such that these irradiation images are irradiated and overlapped at the same position on the irradiation surface 107. Thus, it is possible to reduce luminance unevenness in the irradiated image.

  As mentioned above, although this invention was demonstrated along the Example and the modification, this invention is not limited to these. It will be apparent to those skilled in the art that various modifications, improvements, combinations, and the like can be made.

DESCRIPTION OF SYMBOLS 1 ... Sapphire substrate, 2 ... Device structure layer (GaN-type light emission part), 3 ... p electrode layer (1st electrode layer), 4 ... Etching stop layer, 5 ... Diffusion prevention layer, 6 ... 1st adhesion layer, 7 ... Insulating film, 8 ... extraction electrode (second n electrode layer), 9 ... second adhesive layer, 10 ... silicon (Si) support substrate, 11 ... extraction electrode (first n electrode layer), 12 ... electrode layer, 20 ... buffer layer 21 ... n-type GaN layer, 22 ... active layer, 23 ... p-type GaN layer, 50 ... headlamp, 51 ... projection optical system, 100 ... LED array, 101 ... nitride semiconductor light emitting device (LED device), 101a ... Phosphor layer (wavelength conversion layer), 102 ... light source, 103 ... reflecting surface, 104 ... shade, 105 ... irradiation lens, 106 ... light source image, 107 ... irradiation surface

Claims (3)

A semiconductor light-emitting element array in which a plurality of semiconductor light-emitting elements are formed along the first direction on a substrate that is long in a first direction,
Each of the plurality of semiconductor light emitting elements is
An electrode layer formed on the substrate;
A p-type semiconductor layer formed on the electrode layer and electrically connected to the electrode layer, an active layer formed on the p-type semiconductor layer, and an n-type semiconductor layer formed on the active layer A rectangular semiconductor light emitting layer whose planar shape is long in the first direction;
A first wiring layer formed in parallel with the long side along one long side of the semiconductor light emitting layer;
A second wiring layer extending from the first wiring layer in the short side direction of the semiconductor light emitting layer and electrically connected to the n-type semiconductor layer on the surface of the semiconductor light emitting layer;
In the adjacent semiconductor light emitting device, the first wiring layer is formed along different long sides of the semiconductor light emitting layer.   The semiconductor light emitting element array according to claim 1, wherein the first wiring layer is electrically connected to the electrode layer of the semiconductor light emitting element adjacent to one of the first wiring layers, and the plurality of semiconductor light emitting elements are connected in series. The semiconductor light-emitting element array according to claim 1 or 2, arranged so that the luminance distribution of each irradiation image is in a mirror image inverted state,
A vehicular lamp having an optical system that irradiates the irradiation images of the at least two semiconductor light emitting element arrays so as to overlap each other on the irradiation surface.

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