JP5754269B2 - Light emitting element - Google Patents

Description

  The present invention relates to a light emitting device, and more particularly, to a light emitting device in which a p-side electrode and an n-side electrode face each other and a semiconductor portion is interposed therebetween.

  Conventionally, a light emitting element is required to have a uniform light emission distribution in the light extraction surface, and for that reason, a current density in the light extraction surface is required to be uniform. For example, the light-emitting element illustrated in FIG. 6 has a counter electrode structure in which a semiconductor portion is sandwiched between a p-side electrode and an n-side electrode, and the n-side electrode is bonded to the bonding pad 4 (see “ Equivalent to the “connecting portion”), two extending portions 3 extending from the bonding pad 4 along the side surface of the light extraction surface, and a plurality of extending portions extending in parallel from the extending portion 3 toward the center of the light extraction surface 2. The light-emitting element shown in FIG. 6 discloses that a plurality of extending portions 2 are provided at equal intervals so that a relatively uniform light emission distribution can be achieved on the light extraction surface (see, for example, Patent Document 1).

Special table 2008-543068

  However, in the electrode arrangement having the equally-extended extending portions on the light extraction surface as in Patent Document 1, the current density distribution on the light extraction surface cannot be made uniform. This is because in the case of a light emitting device having a counter electrode structure, current tends to flow in the thickness direction of the semiconductor portion, which is a direction connecting the p-side electrode and the n-side electrode, and tends not to flow in the electrode plane direction. This is because the amount of current supplied decreases and the current density decreases as the distance from the point where current is supplied from the outside (hereinafter referred to as current supply point) is reduced. For this reason, the amount of current supplied is different between the current supply point and the point far from the point, and thus the current density distribution on the light extraction surface is biased.

  Therefore, the present invention has been made in view of the above-described problems, and an object thereof is to reduce the bias of the current density distribution on the light extraction surface.

  A light-emitting element according to the present invention includes a semiconductor portion having a first main surface and a second main surface, a first electrode disposed on the first main surface, and a second electrode disposed on the second main surface; . The first electrode extends from the first connecting portion, the second connecting portion, the first extending portion extending from the first connecting portion, the second extending portion extending from the second connecting portion, and the first connecting portion. A third extending portion provided on the second connecting portion side from the first extending portion; and a fourth extending portion extending from the second connecting portion and provided on the first connecting portion side from the second extending portion. . The first main surface has a parallel region in which the first extending portion, the second extending portion, the third extending portion, and the fourth extending portion are partially parallel to each other. The distance from the first connecting portion of the third extending portion to the parallel region is longer than the distance from the first connecting portion of the first extending portion to the parallel region, and the distance from the second connecting portion of the fourth extending portion to the parallel region. Is longer than the distance from the second connecting portion of the second extending portion to the parallel region. In the parallel region, the distance between the third extending portion and the fourth extending portion is shorter than the distance between the first extending portion and the third extending portion and the distance between the second extending portion and the fourth extending portion. To do.

  According to the present invention, it is possible to provide a light-emitting element that can reduce the unevenness of the current density distribution on the first main surface and suppress the luminance unevenness of the light emission distribution.

It is a top view of the light emitting element concerning a 1st embodiment. It is XX sectional drawing of the light emitting element which concerns on 1st Embodiment. It is a figure which shows the current density distribution of the light emitting element which concerns on 1st Embodiment. It is a top view of the light emitting element concerning a 2nd embodiment. It is a figure which shows the current density distribution of the light emitting element which concerns on 2nd Embodiment. It is a top view of the conventional light emitting element.

Hereinafter, light-emitting elements according to embodiments of the present invention will be described with reference to the drawings. However, the form shown below is for embodying the technical idea of the present invention, and the present invention is not limited to the following. The size and positional relationship of the members shown in each drawing may be exaggerated for clarity of explanation. Further, in the following description, the same name and reference sign indicate the same or the same members in principle, and the detailed description will be omitted as appropriate.
[First Embodiment]
The light emitting device 100 according to the first embodiment will be described with reference to FIGS. 1 and 2. FIG. 1 is a plan view of the light emitting device 100 as viewed from the first main surface side. FIG. 2 is a cross-sectional view of the light emitting device 100 taken along the line XX.

  The light emitting element 100 includes a semiconductor portion 10 having a first main surface 11a and a second main surface 11b, a first electrode 20 disposed on the first main surface 11a, and a first electrode disposed on the second main surface 11b. Two electrodes 30. As shown in FIG. 1, the light emitting element 100 includes a first electrode 20, a first connecting portion 21, a second connecting portion 22, a first extending portion 23 extending from the first connecting portion, and a second connecting portion. From the second extending portion 24 that extends from the second extending portion 24, the third extending portion 25 that extends from the first connecting portion and is provided closer to the second connecting portion than the first extending portion, and the second extending portion that extends from the second connecting portion And a fourth extending portion 26 provided on the first connecting portion side. The first major surface 11a has a parallel region in which the first extending portion 23, the second extending portion 24, the third extending portion 25, and the fourth extending portion 26 are partially parallel to each other. The distance from the first connecting portion of the third extending portion 25 to the parallel region is longer than the distance from the first connecting portion of the first extending portion 23 to the parallel region, and from the second connecting portion of the fourth extending portion 26 to the parallel region. Is longer than the distance from the second connecting portion of the second extending portion 24 to the parallel region. In the parallel region, the distance between the third extending portion 25 and the fourth extending portion 26 is based on the distance between the first extending portion 23 and the third extending portion 25 and the distance between the second extending portion 24 and the fourth extending portion 26. Is also short.

  Here, the “parallel region” refers to a region (first region shown in FIG. 1) in which the first to fourth extending portions face each other and extend in parallel. “Parallel” includes not only the case of being completely parallel but also being included in the range of “parallel” as being substantially parallel.

  Thereby, the bias of the current density distribution in the parallel region can be reduced. The reason is as follows. Since the current amount of the first to fourth extending portions (23 to 26) decreases as the distance from the connecting portion increases, the amount of current supplied from the first connecting portion to the third extending portion in the parallel region is It becomes smaller than the electric current amount supplied to the 1st extending | stretching part of a parallel area | region from one connection part. Similarly, the amount of current supplied from the second connection portion to the fourth extension portion in the parallel region is smaller than the amount of current supplied from the second connection portion to the second extension portion in the parallel region. Therefore, if the first to fourth extending portions in the parallel region are equally spaced, the current density in the region sandwiched between the third extending portion and the fourth extending portion is the first extending portion and the third extending portion. It becomes smaller than the current density of the sandwiched region and the region sandwiched between the second stretched portion and the fourth stretched portion, and the current density distribution is biased. Therefore, as shown in FIG. 1, the interval (interval b) between the third extending portion and the fourth extending portion in the parallel region is the interval (interval a) between the first extending portion and the third extending portion, and the second extending portion. It is made narrower than the space | interval (space | interval c) of a part and 4th extending | stretching part. As a result, the current density in the region sandwiched between the third stretched portion and the fourth stretched portion increases, and the region sandwiched between the first stretched portion and the third stretched portion, and the second stretched portion and the fourth stretched portion. And the current density in the region sandwiched between As a result, as shown in FIG. 3, the bias of the current density distribution can be reduced.

  Hereinafter, main components constituting the light emitting element 100 will be described.

(Semiconductor part)
The semiconductor unit 10 is a member that performs a light emitting function in the light emitting element 100. As shown in FIG. 2, the semiconductor unit 10 has a first main surface 11a and a second main surface 11b that are opposed to each other with the semiconductor unit 10 interposed therebetween, and the first main surface 11a serves as a light extraction surface. Moreover, the semiconductor part 10 can also be made into a rectangle seeing from the 1st main surface side. “Rectangle” refers to a quadrilateral whose four corners are substantially perpendicular, and includes squares and rectangles. In the present embodiment, each side is a square of about 1 mm. Although not shown, the semiconductor unit 10 has a structure in which a first semiconductor unit, a light emitting unit, and a second semiconductor unit are provided in order from the first main surface side.

  The light emitting part is sandwiched between a first semiconductor part that is an n-type semiconductor and a second semiconductor part that is a p-type semiconductor, and recombines electrons and holes injected from the first semiconductor part and the second semiconductor part. This is a site that emits energy generated as a result of light.

  The first semiconductor part is a part that is formed on the first main surface side of the semiconductor part and is connected to the first electrode. The second semiconductor part is a part that is formed on the second main surface side of the semiconductor part and is connected to the second electrode. The first semiconductor part and the second semiconductor part have different polarities. In the present embodiment, the first semiconductor part is an n-type semiconductor and the second semiconductor part is a p-type semiconductor.

  As shown in FIG. 2, an uneven portion is formed on the upper surface of the first semiconductor portion (that is, the first main surface of the semiconductor portion). By forming the concavo-convex portion on the upper surface of the semiconductor portion, light that is not emitted to the outside of the semiconductor portion due to total reflection of light can be extracted to the outside, and light extraction efficiency can be improved. In addition, it is preferable to set it as 0.2-3.0 micrometers from a viewpoint of improving the light extraction efficiency suitably, and, as for the depth of this uneven | corrugated | grooved part, it is more preferable to set it as 1.0-1.5 micrometers.

The material constituting the semiconductor portion is not limited, and various materials can be used. In the present embodiment, In _x Al _y Ga _1-xy N (0 ≦ x ≦ 1, 0 ≦ y ≦ 1, 0 ≦ x + y ≦ 1) is used as a material constituting the semiconductor portion.

(First electrode)
The first electrode 20 is an electrode for supplying current to the semiconductor unit 10 from the first main surface 11a side. In the light emitting element 100, the first electrode 20 functions as an n-side electrode that is a negative electrode among a pair of positive and negative electrodes included in the light emitting element 100. As shown in FIG. 2, the first electrode 20 is formed on the first main surface side of the semiconductor unit 10 and faces the second electrode 30 with the semiconductor unit 10 interposed therebetween. The 1st electrode 20 in 1st Embodiment is provided with the 1st connection part 21 and the 2nd connection part 22, and the 1st-4th extending | stretching part (23-26), as shown in FIG.

(First connection part and second connection part)
The first connection portion 21 and the second connection portion 22 are portions to which current is supplied from the outside via a connection member such as a conductive wire.

  As shown in FIG. 1, the first and second connecting portions are provided at both corners of one side 12a of a pair of opposing sides (12a and 12b) that are rectangular on the first main surface that is rectangular. Yes. As a result, the direction in which the conductive wire can be attached from the connection portion to the outside without blocking the light emitted from the first main surface can be widened, so that the degree of freedom in designing the light emitting element can be increased. it can.

  Although the shape of the first and second connection portions is a quadrangular shape in the present embodiment, the shape is not limited to an angular shape, and the quadrangular corner portion may be rounded, circular, or elliptical. .

(1st extending part and 2nd extending part)
The first extending portion 23 is a portion extending from the first connecting portion, and the second extending portion 24 is a portion extending from the second connecting portion, both of which supply an electric current to an outer region in the first main surface. It is.

  When the first main surface is rectangular and the first and second connection portions are provided at the corners of the rectangle, the first extending portion extends in parallel with the side 12c of the first main surface in the first region. The second extending portion preferably extends in parallel with the side 12d of the first main surface (that is, the first and second extending portions extend linearly toward the other side 12b). Thus, current can be supplied to the other side 12b, and current can be efficiently supplied to a wide area of the first main surface.

  The first and second extending portions are closer to the respective distal ends of the first and second extending portions in a region (second region shown in FIG. 1) that is farther from the first and second connecting portions than the parallel region. (I.e., the first stretching portion changes the stretching direction and stretches toward the second stretching portion, and the second stretching portion changes the stretching direction and stretches toward the first stretching portion). Thus, current can be supplied over a wide range of the second region.

  Furthermore, the first and second extending portions extend so that the distance from the line connecting the first connecting portion and the second connecting portion becomes longer toward the respective tip portions (that is, the first extending portion is It is preferable to extend toward the other side 12b while extending toward the second extending portion, and the second extending portion extends toward the other side 12b while extending toward the first extending portion. As a result, current can be supplied at a short distance to the distal end of the extending portion disposed at the position farthest from the connecting portion, and thus the current supplied to the distal end of the extending portion is prevented from decreasing. it can.

  The first and second extending portions are preferably curved in the second region to change the extending direction. Thereby, it can suppress that the current density in the curved part becomes high too much.

  It is preferable that the first and second extending portions are separated from each other at the tip ends of the first and second extending portions in the second region. As a result, since the areas of the first and second extending portions covering the first main surface can be reduced as compared with the case where the leading ends of the first and second extending portions are connected, light extraction from the first main surface is possible. The area is improved.

  In the present embodiment, as shown in FIG. 1, the first and second extending portions are composed of a linearly extending portion in the first and third regions and a curved and extending portion in the second region. However, the portion of the second region may not be provided.

(3rd extending part and 4th extending part)
The third extending portion 25 is a portion that extends from the first connecting portion and is provided closer to the second connecting portion than the first connecting portion, and the fourth extending portion 26 extends from the second connecting portion and is connected to the second connection These are parts provided closer to the first connection part than the part, and both are electrodes for supplying current to the inner region in the first main surface.

  A 3rd extending | stretching part once extends | stretches from the 1st connection part to the 2nd connection part side, changes an extending direction to the other side 12b side, and extends | stretches. Further, the fourth extending portion extends from the second connecting portion to the first connecting portion side once, and changes the extending direction to the other side 12b and extends. In addition, although it is preferable to extend | stretch a 3rd and 4th extending part to a 1st area | region, it can also extend | stretch to a 2nd area | region through a 1st area | region.

  When the first connecting portion is provided in the corner (or the vicinity thereof) of the first main surface, it is preferable that the first extending portion and the third extending portion are orthogonal to each other in the vicinity of the first connecting portion. Thereby, the current concentration in the vicinity of the first connection portion can be reduced. The same applies to the second and fourth extending portions.

  It is preferable that the extending direction of the third and fourth extending portions bend and change before extending in the parallel region (that is, in the third region). Here, the third region refers to a region closer to the first and second connection portions than the parallel region. Compared to the case where the stretching direction is changed at a right angle, firstly, it is possible to suppress the current density from becoming excessively high at the portion where the stretching direction changes. Secondly, it is possible to shorten the distance to the distal end of the extending portion, and to suppress a decrease in the amount of current supplied to the distal end. Thirdly, the current density difference between the region sandwiched between the portions where the stretching direction changes in the third and fourth stretching portions and the region sandwiched between the tip portions of the third and fourth stretching portions can be reduced. The reason for the third effect is as follows. Since the part where the extending direction of the third and fourth extending parts changes is located near the first and second connecting parts, the amount of current supplied from the connecting part is large. Therefore, when the extending direction changes to a right angle and the distance between the portions where the extending direction changes and the distance between the tip portions are the same, the region sandwiched between the portions where the extending direction changes and the region sandwiched between the tip portions The current density difference becomes larger. Therefore, by changing the extending direction by curving, the distance between the portions where the extending direction changes can be made larger than the distance between the tip portions. As a result, the current density in the region sandwiched between the portions where the stretching direction changes can be suppressed from becoming excessively high, and the region sandwiched between the portions where the stretched portions in the third and fourth stretched portions change, and the third and fourth regions. The current density difference with the area | region pinched | interposed between the front-end | tip parts of 4 extending | stretching parts can be made small.

  As shown in FIG. 1, it is preferable that the 1st and 3rd extending | stretching part is divided | segmented into 2 hands at the 1st connection part, and is extended | stretched. If branching is performed after extending in the same direction so that the first and third extending parts overlap in the vicinity of the first connecting part, current concentration occurs at the branched part, and the amount of current supplied to the tip part of each extending part is small. Therefore, the current density distribution is biased. Therefore, the above-described problem can be solved by branching the first and third extending portions at the first connecting portion. The same applies to the second and fourth extending portions.

  The length from the first connection part to the tip part of the first extension part is longer than the length from the first connection part to the tip part of the third extension part, from the second connection part to the tip part of the second extension part. The length of can be longer than the length from the second connecting portion to the tip of the fourth extending portion. In this case, the distance (distance d shown in FIG. 1) between the distal end portion of the first extending portion and the distal end portion of the second extending portion is the distance between the distal end portion of the third extending portion and the distal end portion of the fourth extending portion ( It is preferable that the interval b) is shorter than that shown in FIG. Thereby, the current density of the region sandwiched between the tip portions of the first and second extending portions is increased, and the current density difference from the region sandwiched between the tip portions of the third and fourth extending portions can be reduced.

  The first electrode 20 is a straight line that vertically bisects a line connecting the first connection portion and the second connection portion as viewed from the first main surface side (that is, the midpoint of one side 12a and the other side 12b). It is preferable that the line is symmetric with respect to a line connecting with the midpoint. Thereby, the current density distribution can be made uniform with reference to the straight line. Here, “symmetric” is not limited to the case of being completely symmetric, but within the range of “symmetry” assuming that it is substantially symmetric even if there is a slight deviation.

  In addition, the 1st electrode 20 can also provide a 1st and 2nd connection part in two corners (or its vicinity) located in a rectangular diagonal. In this case, the first and third extending portions face the second and fourth extending portions and extend in the opposite direction to the second and fourth extending portions, so that the first electrode 20 is the center point of the first main surface. It is also possible to make point symmetry with respect to.

  Although the thickness of the 1st electrode 20 is not limited, It is preferable to set it as 0.1-5 micrometers from a conductive viewpoint, for example. Further, Ni, Au, W, Pt, Ti, Al, or the like can be used as the material of the first electrode 20, and in this embodiment, a multilayer film of Ti / Pt / Au is used. Note that “Ti / Pt / Au” indicates that Ti, Pt, and Au are stacked in that order from the lower side in the cross-sectional view of the light-emitting element 100 illustrated in FIG. 2.

(Second electrode)
The second electrode 30 is an electrode for supplying current to the semiconductor unit 10 from the second main surface side. In the light emitting element 100, the second electrode 30 functions as a p-side electrode that is a positive electrode among a pair of positive and negative electrodes included in the light emitting element 100. As shown in FIG. 2, the second electrode 30 is formed on the lower surface (second main surface 11 b) side of the semiconductor portion 10 and faces the first electrode 20 with the semiconductor portion 10 interposed therebetween.

  As shown in FIG. 2, the second electrode 30 is preferably provided to the extent that the first electrode 20 is not formed immediately above the second electrode. By setting the positional relationship between the first electrode and the second electrode in such a relationship, the current flowing between the first electrode 20 and the second electrode 30 flows in the semiconductor unit 10 in the shortest direction in the film thickness direction. And the current is distributed over a wide area in the plane. Accordingly, light is emitted relatively uniformly in the semiconductor portion, and the light extraction efficiency is improved.

  The area of the second electrode is preferably larger than the area of the first electrode. In the light emitting element, by setting the areas of the first and second electrodes in such a relationship, the area of the region where current is injected can be increased, and the light emission efficiency can be improved. Moreover, the heat dissipation of the heat by light emission can also be improved and the heat dissipation of a light emitting element can be improved.

  The thickness of the second electrode is not limited, but is preferably 0.05 to 0.5 μm, for example, from the viewpoint of conductivity. Further, Ni, Au, W, Pt, Ti, Al, Ir, Rh, RhO, Ag, or the like can be used as the material of the second electrode. In this embodiment, Ag / Ni / Ti / Pt is used. It was.

(Support substrate)
The support substrate 40 is for supporting the semiconductor unit 10 via the second electrode 30, the second protective film 70, and the bonding layer 50. Although the thickness of a support substrate is not limited, From a heat dissipation viewpoint, it is preferable to set it as 50-500 micrometers, for example.

  As a material of the support substrate, a laminate of metal and ceramic such as Si, SiC, AlN, AlSiC, Cu—W, Cu—Mo, and Cu—diamond can be used. Among them, it is preferable to use Si which is inexpensive and easily chipped.

(Bonding layer)
The bonding layer 50 bonds the second electrode 30 and the second protective film 70 to the support substrate 40 and electrically connects the second electrode 30 and a back metallization layer 80 to be described later via the support substrate 40. It is a conductive layer. As shown in FIG. 2, the bonding layer 50 is formed on the support substrate 40.

Although the thickness of a joining layer is not limited, It is preferable to set it as 0.5-5 micrometers from a viewpoint of joining property and electroconductivity. In addition, as a material for the bonding layer, metal materials such as Ti, Pt, Sn, Au, Ag, Cu, Bi, Pb, Zn, and alloys thereof can be used. In the present embodiment, a multilayer film of TiSi ₂ / Pt / Au / AuSn / Au / Pt is used. “TiSi ₂ / Pt / Au / AuSn / Au / Pt” indicates that TiSi ₂ , Pt, Au, AuSn, Au, and Pt are sequentially stacked on the support substrate 40.

(First protective film)
The first protective film 60 is a member for protecting the semiconductor unit 10 and the first electrode 20 from physical damage due to a short circuit of current or adhesion of dust / dust. As shown in FIG. 2, the first protective film 60 is formed on the first main surface 11 a and the side surface of the semiconductor unit 10. However, the first protective film 60 is opened above the openings of the first and second connection portions, and is configured such that the first and second connection portions are exposed to the outside. Although the first protective film 60 is adjacent to the side surface of the first electrode 20 in FIG. 2, the first protective film 60 may be provided at a distance from the first electrode 20.

The material of the first protective film is not limited, and various materials can be used. In this embodiment, SiO ₂ is used. Although the thickness of a 1st protective film is not limited, For example, it is preferable to set it as 0.2-0.5 micrometer.

(Second protective film)
The second protective film 70 is a member for protecting the semiconductor unit 10 and the second electrode 30 from physical damage due to a short circuit of current. As shown in FIG. 2, the second protective film 70 is formed in a region adjacent to the second electrode 30 on the bonding layer 50. The second protective film 70 is adjacent to the side surface of the second electrode 30 in FIG. 2, but may be provided with a gap.

Although the thickness of a 2nd protective film is not limited, For example, it is preferable to set it as 0.2-0.5 micrometer. Moreover, Ti, Al, Pt, SiO ₂ , ZrO ₂ or the like can be used as the material of the second protective film, and in this embodiment, a multilayer film of Ti / SiO ₂ / Ti / Pt is used.

(Back metallization layer)
The back metallized layer 80 is a layer that functions as an electrode that electrically connects the light emitting element 100 and the outside. As shown in FIG. 2, the back metallized layer 80 is formed on the side of the support substrate 40 that faces the side on which the bonding layer 50 is formed.

Although the thickness of a back surface metallization layer is not limited, From a conductive viewpoint, it is preferable to set it as 0.5-0.8 micrometer, for example. In this embodiment, a multilayer film of Au / Pt / TiSi ₂ is used as a material constituting the back metallization layer.

  The light emitting device 100 according to the present embodiment includes the support substrate 40, the bonding layer 50, the first protective film 60, the second protective film 70, and the back metallized layer 80, but does not include these members. Also, the effects of the present invention can be obtained.

[Method for Manufacturing Light-Emitting Element]
Hereinafter, a method for manufacturing the light emitting device 100 according to the first embodiment will be described. The manufacturing method of the light emitting element 100 includes a semiconductor part forming step, a second electrode forming step, a second protective film forming step, a bonding layer forming step, a bonding step, a first electrode forming step, and a first protection. A film forming step. Hereinafter, each step will be described.
<Semiconductor part formation process>
The semiconductor part forming process is a process of forming the semiconductor part 10 on a different substrate. In the semiconductor part forming step, a gas containing a predetermined semiconductor material, a dopant, etc. is supplied to the surface on a heterogeneous substrate made of sapphire or the like to form the first semiconductor part, the light emitting part, and the second semiconductor part in this order. 10 is formed.
<Second electrode forming step>
The second electrode forming step is a step of forming the second electrode 30 on the semiconductor unit 10. In the second electrode forming step, a mask corresponding to the second electrode 30 is formed on the surface of the semiconductor portion 10 on the second semiconductor layer using a resist, and an electrode material is stacked by sputtering or the like, whereby the second electrode is formed. 30 is formed.
<Second protective film forming step>
The second protective film forming step is a step of forming the second protective film 70 on the semiconductor unit 10. In the second protective film forming step, a mask corresponding to the second protective film 70 is formed using a resist on the surface of the semiconductor portion 10 on the second semiconductor portion, and an insulating film material is stacked by sputtering or the like, A second protective film 70 is formed.
<Joint layer forming step>
The bonding layer forming step is a step of forming the bonding layer 50 on the semiconductor unit 10, the second electrode 30, and the second protective film 70. In the bonding layer formation step, the bonding layer 50 is formed by laminating a conductive film material by sputtering or the like on the semiconductor portion 10, the second electrode 30, and the second protective film 70.
<Lamination process>
The bonding step is a step of bonding the heterogeneous substrate including the semiconductor unit 10 and the support substrate 40 together. In the bonding step, the support substrate 40 on which the bonding layer 50 is formed is prepared, and the bonding layer of the support substrate 40 and the bonding layer of the dissimilar substrate are bonded and bonded to each other. Then, the heterogeneous substrate is removed. Note that the light-emitting element can be reduced in size by reducing the thickness of the support substrate 40 after the bonding step.
<First electrode forming step>
The first electrode forming step is a step of forming the first electrode 20 on the semiconductor unit 10. In the first electrode forming step, a mask corresponding to the first electrode is formed on the surface of the semiconductor portion 10 on the first semiconductor layer using a resist, and an electrode material is laminated by sputtering or the like, whereby the first electrode 10 is formed. Form. Then, by removing the resist, a region where the first electrode 20 is not formed is formed. In addition, before forming the first electrode 20, an uneven portion (dimple processing) portion can be formed on the upper surface of the semiconductor portion 10.
<First protective film forming step>
The first protective film forming step is a step of forming the first protective film 60 on the semiconductor unit 10. In the first protective film forming step, the first protective film 60 is formed on the surface of the semiconductor unit 10 by laminating an insulating film material by sputtering or the like. And the area | region corresponded to the 1st and 2nd connection parts (21, 22) of the 1st electrode 20 among the 1st protective films 60 is removed, and the 1st and 2nd connection parts (21, 22) are exposed.

[Second Embodiment]
A light emitting device 200 according to the second embodiment will be described with reference to FIG. FIG. 4 is a plan view showing the light emitting element 200. The light emitting element 200 is different from the light emitting element 100 only in the arrangement of the first electrode.

  As shown in FIG. 4, the first electrode 120 of the light emitting device 200 includes first and second connection parts (21, 22), first and second extension parts (23, 24), third and fourth parts. It has extending portions (125, 126) and fifth and sixth extending portions (127, 128).

  As shown in FIG. 4, it is preferable that the first, third and fifth extending portions (23, 125, 127) extend from the first connecting portion, and the fifth extending portion 127 extends toward the second connecting portion. . Accordingly, the number of extending portions extending from the first connecting portion increases, and even when a larger current is supplied to the connecting portion, the current can be efficiently dispersed in the extending portion. Similarly, it is preferable that the second, fourth, and sixth extending portions (24, 126, 128) extend from the second connecting portion, and the sixth extending portion 128 extends toward the first connecting portion.

  In the first, third and fifth extending portions (23, 125, 127), the third extending portion 125 is disposed between the first extending portion 23 and the fifth extending portion 127, and is equiangular from the first connecting portion. It is preferable to stretch by. Accordingly, the current density difference between the region sandwiched between the first extending portion and the third extending portion and the region sandwiched between the third extending portion and the fifth extending portion in the vicinity of the first connecting portion can be reduced. Similarly, the second, fourth, and sixth extending portions (24, 126, 128) are configured such that the fourth extending portion 126 is disposed between the second extending portion 24 and the sixth extending portion 128, and the second connecting portion. It is preferable that the film is stretched at an equal angle.

  More preferably, as shown in FIG. 4, the first, third, and fifth extending portions (23, 125, 127) extend in a direction in which the first extending portion 23 is parallel to the side 12c of the first main surface. The fifth extending portion 127 extends in a direction parallel to the side 12a of the first main surface, and the third extending portion 125 is an intermediate direction between the extending direction of the first extending portion 23 and the extending direction of the fifth extending portion 127. It is preferable that the film is once stretched and then stretched toward the other side 12b. The second, fourth, and sixth extending portions are symmetrical to the first, third, and fifth extending portions with respect to a straight line that connects the midpoint of one side 12a and the midpoint of the other side 12b. It is good to stretch. As a result, as shown in FIG. 5, the current spreads efficiently over the entire first main surface, and the bias of the current density distribution can be reduced.

DESCRIPTION OF SYMBOLS 100, 200 ... Light emitting element 10 ... Semiconductor part 11a ... 1st main surface 11b ... 2nd main surface 12a ... One side 12b ... The other side 20, 120 ... 1st electrode 21 ... 1st connection part 22 ... 2nd connection part 23 ... 1st extending part 24 ... 2nd extending part 25, 125 ... 3rd extending part 26, 126 ... -4th extending part 127 ... 5th extending part 128 ... 6th extending part

30 ... second electrode 40 ... support substrate 50 ... bonding layer 60 ... first protective film 70 ... second protective film 80 ... back metallization layer

Claims (8)

A light emitting device comprising: a semiconductor portion having a first main surface and a second main surface; a first electrode disposed on the first main surface; and a second electrode disposed on the second main surface. There,
The first electrode includes a first connecting portion, a second connecting portion, a first extending portion extending from the first connecting portion, a second extending portion extending from the second connecting portion, and the first connection. A third extending portion that extends from the first portion and is provided closer to the second connecting portion than the first extending portion, and a third extending portion that extends from the second connecting portion and is provided closer to the first connecting portion than the second extending portion. A fourth extending portion,
The first main surface has a parallel region in which the first extending portion, the second extending portion, the third extending portion, and the fourth extending portion are partially parallel to each other,
The distance from the first connection part of the third extension part to the parallel region is longer than the distance from the first connection part of the first extension part to the parallel region,
The distance from the second connecting portion of the fourth extending portion to the parallel region is longer than the distance from the second connecting portion of the second extending portion to the parallel region,
In the parallel region, the distance between the third extending portion and the fourth extending portion is the distance between the first extending portion and the third extending portion and the distance between the second extending portion and the fourth extending portion. A light-emitting element characterized by being shorter.   The first and second extending portions are extended so that respective tip portions of the first and second extending portions are closer to each other in a region farther from the first and second connection portions than the parallel region. The light emitting device according to claim 1.   3. The light emission according to claim 2, wherein the first and second extending portions have a longer distance from a line connecting the first connection portion and the second connection portion toward the tip portion. element. The length from the first connection portion to the tip portion of the first extension portion is longer than the length from the first connection portion to the tip portion of the third extension portion,
The length from the second connection part to the tip part of the second extension part is longer than the length from the second connection part to the tip part of the fourth extension part,
The distance between the distal end portion of the first extending portion and the distal end portion of the second extending portion is shorter than the distance between the distal end portion of the third extending portion and the distal end portion of the fourth extending portion. Item 4. The light emitting device according to Item 2 or 3.   5. The light emitting device according to claim 1, wherein the extending direction of the third and fourth extending portions is curved before extending to the parallel region.   The first electrode further includes a fifth extending portion extending from the first connecting portion toward the second connecting portion, a sixth extending portion extending from the second connecting portion toward the first connecting portion, The light emitting device according to claim 1, wherein the light emitting device is provided. The first, third and fifth extending portions are arranged such that the third extending portion is disposed between the first extending portion and the fifth extending portion, and extends at an equal angle from the first connecting portion,
In the second, fourth, and sixth extending portions, the fourth extending portion is disposed between the second extending portion and the sixth extending portion, and extends at an equal angle from the second connecting portion. The light emitting device according to claim 6.   The said 1st electrode is symmetrical with respect to the straight line which bisects the line | wire which connects the said 1st connection part and the said 2nd connection part vertically, It is described in any one of Claims 1-7 characterized by the above-mentioned. Light emitting element.