JP5762811B2 - Thin film processing method and frequency adjustment method of piezoelectric vibrator - Google Patents

Description

The present invention is a processing method of a thin film, and those related to the frequency adjustment how the piezoelectric vibrator.

  In a so-called package type piezoelectric device in which a piezoelectric vibrator is housed inside an electronic component package whose inside is a sealed space, a thin film is formed in advance on the inner surface of the electronic component package, and the electronic component package is formed on the thin film. A technique is known in which the frequency of a piezoelectric vibrator is changed by irradiating the laser from the outside and scattering the particles and attaching the scattered particles to the surface of the piezoelectric vibrator. Examples of such a technique include the following.

  FIG. 13 is a top view and a cross-sectional view showing a piezoelectric device, and FIG. 14 is a cross-sectional view showing a frequency adjusting method for a conventional piezoelectric vibrator. In the top view, the uppermost member is seen through (the same applies hereinafter). In the piezoelectric device shown here, a plate-like piezoelectric vibrator 3 is housed inside an electronic component package formed by bonding a plate-like lid member 2 to a box-shaped base substrate 1 having an open top. In the so-called package type piezoelectric device, a thin film 4 made of metal or the like is formed on the surface of the lid member 2 facing the piezoelectric vibrator 3.

  In this piezoelectric device, when the frequency of the piezoelectric vibrator 3 is adjusted, the frequency of the piezoelectric vibrator 3 is set to a higher frequency side than the target value in advance, and the laser 5 having a wavelength band that transmits the lid member 2 is used. The thin film 4 on the inner surface of the lid member 2 is irradiated from the outer surface side of the lid member 2 so as to be focused to scatter the thin film 4, and the scattered particles 4a of the thin film 4 are adhered to the surface of the piezoelectric vibrator 3. The frequency is decreased by increasing the mass of the piezoelectric vibrator 3. (For example, see Patent Documents 1 and 2)

  FIG. 15 is a top view and a cross-sectional view showing a piezoelectric device, and FIG. 16 is a cross-sectional view showing a conventional frequency adjusting method for a piezoelectric vibrator. In the piezoelectric device shown here, a plate-like piezoelectric vibrator 3 is housed inside an electronic component package formed by bonding a plate-like lid member 2 to a box-shaped base substrate 1 having an open top. In the so-called package type piezoelectric device, a thin film 6 made of metal or the like is formed on the surface of the base substrate 1 facing the piezoelectric vibrator 3.

  In this piezoelectric device, when the frequency of the piezoelectric vibrator 3 is adjusted, the frequency of the piezoelectric vibrator 3 is set to a higher frequency side than the target value in advance, and the laser 5 having a wavelength band that transmits the lid member 2 is used. The thin film 6 on the inner surface of the base substrate 1 is irradiated from the outer surface side of the lid member 2 so as to be focused to scatter the thin film 6, and the scattered thin film 6 particles 6 a are attached to the surface of the piezoelectric vibrator 3. The frequency is decreased by increasing the mass of the piezoelectric vibrator 3. (For example, see Patent Document 3)

Japanese Patent Laid-Open No. 2-179013 JP-A-5-29863 Japanese Patent No. 3843779

  In conventional thin film processing methods, since the thin film is formed directly on the surface of the package, when the laser is irradiated so as to focus on the thin film, the surface layer of the package that is in close contact with the thin film becomes a high-density region of the laser. There is a risk of exposure and damage. As one of the countermeasures, by adjusting the material, thickness, particle density, etc. of the thin film as appropriate, the processing threshold for the laser of the thin film is lowered to make the thin film easier to be processed by the laser. It is conceivable to reduce the damage to the package by lowering it, but for that purpose, only a thin film must be formed individually in advance with special materials and film formation conditions, which reduces the productivity. is there.

The present invention has been made in view of the above problems, and a highly productive thin film processing method and piezoelectric vibration capable of efficiently forming a thin film having a low processing threshold for laser on the inner surface of the package. an object of the present invention is to provide a frequency adjustment how the child.

The electronic component package whose inside is a sealed space is irradiated with a laser from the outside and transmitted, and the transmitted laser is irradiated to a predetermined region inside the electronic component package to at least part of the members existing in the predetermined region. A step of scattering as particles, a step of attaching the scattered particles to the inner surface of the electronic component package to form a thin film, and irradiating and transmitting a laser to the electronic component package from the outside. a step of irradiating a thin film Ru is scattered the thin film as a particle, a method for processing a thin film having a.

  Irradiating and transmitting a laser to the electronic component package from the outside, irradiating the transmitted laser to a predetermined region inside the electronic component package and scattering at least a part of the members existing in the predetermined region as particles; A step of forming the thin film by attaching the scattered particles to the inner surface of the electronic component package; and irradiating the electronic component package by irradiating a laser from the outside and irradiating the thin film with the transmitted laser. Adjusting the frequency of the piezoelectric vibrator having the steps of scattering the particles as particles and attaching the scattered particles to the piezoelectric vibrator housed inside the electronic component package to adjust the frequency of the piezoelectric vibrator The method.

  The member existing in the predetermined region is a frequency adjustment method of a piezoelectric vibrator that is a thin film for frequency adjustment formed on the surface of the piezoelectric vibrator.

  The member existing in the predetermined region is a frequency adjustment method of a piezoelectric vibrator which is a base material of the piezoelectric vibrator.

  The member existing in the predetermined region is a method of adjusting a frequency of a piezoelectric vibrator that is a thin film formed on an inner surface of the electronic component package.

  The member existing in the predetermined region is a frequency adjustment method of a piezoelectric vibrator which is a base material of the electronic component package.

  The inner surface of the electronic component package on which the thin film is formed is a method of adjusting the frequency of the piezoelectric vibrator in which the inner surface of the electronic component package is inclined toward the piezoelectric vibrator.

  According to the present invention, a thin film having a low processing threshold for laser can be efficiently formed on the inner surface of the electronic component package.

Top view and sectional view showing a piezoelectric device Sectional drawing which shows the frequency adjustment method of the piezoelectric vibrator of this invention (Example 1) Top view and sectional view showing a piezoelectric device Sectional drawing which shows the frequency adjustment method of the piezoelectric vibrator of this invention (Example 2) Top view and sectional view showing a piezoelectric device Sectional drawing which shows the frequency adjustment method of the piezoelectric vibrator of this invention (Example 3) Top view and sectional view showing a piezoelectric device Sectional drawing which shows the frequency adjustment method of the piezoelectric vibrator of this invention (Example 4) Top view and sectional view showing a piezoelectric device Sectional drawing which shows the frequency adjustment method of the piezoelectric vibrator of this invention (Example 5) Top view and sectional view showing a piezoelectric device Sectional drawing which shows the frequency adjustment method of the piezoelectric vibrator of this invention (Example 6) Top view and sectional view showing a piezoelectric device Sectional drawing which shows the frequency adjustment method of the conventional piezoelectric vibrator Top view and sectional view showing a piezoelectric device Sectional drawing which shows the frequency adjustment method of the conventional piezoelectric vibrator

  Hereinafter, the present invention will be described with reference to specific examples.

  FIG. 1 is a top view and a cross-sectional view showing a piezoelectric vibrator, and FIG. 2 is a cross-sectional view showing a frequency adjusting method of the piezoelectric vibrator of the present invention. In the piezoelectric device shown here, a plate-like piezoelectric vibrator 3 is housed inside an electronic component package formed by bonding a plate-like lid member 2 to a box-shaped base substrate 1 having an open top. This is a so-called package type piezoelectric device.

  The piezoelectric vibrator 3 is mounted on the inner bottom surface of the base substrate 1 with a conductive adhesive or the like, and the through wiring 7 formed inside the base substrate 1, the wiring pattern laid on the surface of the base substrate 1, etc. Are electrically connected to the external connection terminals 8 provided on the outer bottom surface of the base substrate 1.

  An excitation electrode for exciting and driving the piezoelectric vibrator 3 and a mounting terminal for mounting the piezoelectric vibrator 3 on the base substrate 1 are provided on the surface of the piezoelectric vibrator 3, and facing the lid member 2. A frequency adjusting thin film 11 made of metal or the like is provided in a part of the region.

  In the above-described piezoelectric device, when adjusting the frequency of the piezoelectric vibrator 3, the frequency of the piezoelectric vibrator 3 is set to a lower frequency side than the target value in the manufacturing stage in advance, and is shown in the upper diagram of FIG. As described above, the laser 5 in the wavelength band that passes through the lid member 2 is irradiated from the outer surface side of the lid member 2 so as to focus on the thin film 11 for frequency adjustment on the surface of the piezoelectric vibrator 3, and the laser ablation action Thus, the thin film 11 is scattered as particles 11a.

  When the thin film 11 scatters, the mass of the piezoelectric vibrator 3 decreases and the frequency changes to the high frequency side. At the same time, the scattered particles 11 a of the thin film 11 adhere to the surface of the lid member 2 facing the piezoelectric vibrator 3. Then, a new thin film 12 is formed. The thin film 12 generally has a small thickness and particle density and a low processing threshold for the laser, but these parameters can be changed by appropriately adjusting the irradiation conditions of the laser 5.

  Here, the frequency may be set to the target value by the above frequency adjustment. However, when the frequency exceeds the target value due to excessive adjustment, the cover member 2 is transmitted as shown in the lower diagram of FIG. The laser 5 in the wavelength band is irradiated so as to focus on the thin film 12 on the inner surface of the lid member 2 from the outer surface side of the lid member 2, and the thin film 12 is scattered as particles 12a by the ablation action of the laser. The scattered particles 12 a adhere to the surface of the piezoelectric vibrator 3, and the frequency changes to the low frequency side as the mass of the piezoelectric vibrator 3 increases.

  At this time, since the thin film 12 on the inner surface of the lid member 2 has a low processing threshold with respect to the laser, it is sufficient that the laser 5 to be used has a low output. Since the close surface layer of the lid member 2 is not exposed to the high-intensity laser, damage to the lid member 2 by the laser 5 can be reduced.

  If the frequency falls below the target value again due to the above frequency adjustment, adjust the frequency to the high frequency side (up conversion) and the low frequency side (down conversion) until the frequency reaches the target value. Repeat in the same way.

  In this embodiment, the thin film 12 is simultaneously formed on the surface of the lid member 2 in the process of adjusting the frequency of the piezoelectric vibrator 3 by removing the frequency adjusting thin film 11 on the surface of the piezoelectric vibrator 3. Therefore, the step of forming the thin film 12 on the surface of the lid member 2 can be substantially omitted. In addition, since the material source of the thin film 12 is the frequency adjusting thin film 11 provided in advance on the surface of the piezoelectric vibrator 3, a new material is required to form the thin film 12 on the surface of the lid member 2. Never do.

  The frequency adjusting thin film 11 may be formed on the surface of the piezoelectric vibrator 3 on the side facing the base substrate 1. In this case, the particles 11 a of the thin film 11 scattered by the laser 5 are piezoelectric vibrations. When the thin film 12 is formed on the surface (inner bottom surface) of the base substrate 1 facing the child 3 and the frequency is adjusted to the low frequency side, the thin film 12 is scattered by the laser 5 to cause the piezoelectric vibrator 3 to scatter. It will be attached again to the surface.

  FIG. 3 is a top view and a cross-sectional view showing the piezoelectric vibrator, and FIG. 4 is a cross-sectional view showing the frequency adjusting method of the piezoelectric vibrator of the present invention. The piezoelectric device shown here is the same as the piezoelectric device shown in the first embodiment, and a thin film 11 for frequency adjustment is formed on the surface of the piezoelectric vibrator 3.

  In the piezoelectric device described above, when adjusting the frequency of the piezoelectric vibrator 3, the frequency of the piezoelectric vibrator 3 is set to a lower frequency side than the target value in the manufacturing stage in advance, and is shown in the upper diagram of FIG. As described above, the laser 5 in the wavelength band that passes through the lid member 2 is irradiated from the outer surface side of the lid member 2 so as to focus on the thin film 11 for frequency adjustment on the surface of the piezoelectric vibrator 3, and the laser ablation action Thus, the thin film 11 is scattered as particles 11a.

  When the thin film 11 scatters, the mass of the piezoelectric vibrator 3 decreases and the frequency changes to the high frequency side. At the same time, the scattered particles 11 a of the thin film 11 adhere to the surface of the lid member 2 facing the piezoelectric vibrator 3. Then, a new thin film 12 is formed.

  Here, when the frequency exceeds the target value due to the frequency adjustment described above, as shown in the lower diagram of FIG. The thin film 12 on the inner surface of the lid member 2 is irradiated so as to be focused, and the thin film 12 is scattered as particles 12a by the laser ablation action. The scattered particles 12 a adhere to the surface of the piezoelectric vibrator 3, and the frequency changes to the low frequency side as the mass of the piezoelectric vibrator 3 increases.

  FIG. 5 is a top view and a cross-sectional view showing the piezoelectric vibrator, and FIG. 6 is a cross-sectional view showing the frequency adjusting method of the piezoelectric vibrator of the present invention. The piezoelectric device shown here is a modification of the piezoelectric device shown in Example 1. As a difference, the thin film 11 for frequency adjustment is not formed on the surface of the piezoelectric vibrator 3, and the lid member 2. The base material (piezoelectric material) of the piezoelectric vibrator 3 is exposed in a part of the region facing the surface.

  In the piezoelectric device described above, when adjusting the frequency of the piezoelectric vibrator 3, the frequency of the piezoelectric vibrator 3 is set to a lower frequency side than the target value in the manufacturing stage in advance, and is shown in the upper diagram of FIG. As described above, the laser 5 in the wavelength band that passes through the lid member 2 is irradiated from the outer surface side of the lid member 2 so as to focus on the surface layer of the base material of the piezoelectric vibrator 3, and one of the base materials is irradiated by the laser ablation action The part is scattered as particles 3a. When a part of the base material is scattered, the mass of the piezoelectric vibrator 3 is reduced and the frequency is changed to the high frequency side. At the same time, the scattered particles 3 a are attached to the surface of the lid member 2 facing the piezoelectric vibrator 3. Then, a new thin film 12 is formed.

  Here, when the frequency exceeds the target value due to the frequency adjustment described above, the laser 5 in the wavelength band that transmits the lid member 2 is turned from the outer surface side of the lid member 2 as shown in the lower diagram of FIG. The thin film 12 on the inner surface of the lid member 2 is irradiated so as to be focused, and the thin film 12 is scattered as particles 12a by the laser ablation action. The scattered particles 12 a adhere to the surface of the piezoelectric vibrator 3, and the frequency changes to the low frequency side as the mass of the piezoelectric vibrator 3 increases.

  In this embodiment, since the thin film 12 is simultaneously formed on the surface of the lid member 2 in the process of adjusting the frequency of the piezoelectric vibrator 3 by scattering the base material of the piezoelectric vibrator 3, The step of forming the thin film 12 can be substantially omitted. Further, since the material source of the thin film 12 is the base material of the piezoelectric vibrator 3, no new material is required to form the thin film 12 on the surface of the lid member 2.

  A part of the base material of the piezoelectric vibrator 3 to be scattered by the laser 5 may be a surface layer of the base material on the side facing the base substrate 1. In this case, particles of the base material scattered by the laser 5 are used. 3a is attached to the surface (inner bottom surface) of the base substrate 1 facing the piezoelectric vibrator 3 to form a thin film 12, and when adjusting the frequency to the low frequency side, the thin film 12 is scattered by the laser 5. Thus, it is attached again to the surface of the piezoelectric vibrator 3.

  FIG. 7 is a top view and a cross-sectional view showing the piezoelectric vibrator, and FIG. 8 is a cross-sectional view showing the frequency adjusting method of the piezoelectric vibrator of the present invention. The piezoelectric device shown here has the same basic configuration as that of the piezoelectric device shown in the first embodiment. The difference is that the thin film 11 for frequency adjustment is not formed on the surface of the piezoelectric vibrator 3. A stepped portion 1a is integrally provided on the inner surface of the base substrate 1 located on the tip side of the piezoelectric vibrator 3, and a thin film 13 made of metal or the like is formed on the upper surface of the stepped portion.

  In the piezoelectric device described above, when adjusting the frequency of the piezoelectric vibrator 3, the frequency of the piezoelectric vibrator 3 is set to a higher frequency side than the target value in the manufacturing stage in advance, as shown in the upper diagram of FIG. Then, a laser 5 having a wavelength band that passes through the lid member 2 is irradiated from the outer surface side of the lid member 2 so as to focus on the thin film 13 on the stepped portion 1a of the base substrate 1, and the thin film 13 is irradiated by laser ablation. Are scattered as particles 13a. The scattered particles 13a adhere to the surface of the lid member 2 facing the step portion 1a to newly form the thin film 12.

  Next, as shown in the lower diagram of FIG. 8, the laser 5 having a wavelength band that transmits the lid member 2 is irradiated from the outer surface side of the lid member 2 so as to focus on the thin film 12 on the inner surface of the lid member 2, The thin film 12 is scattered as particles 12a by the ablation action of the laser. The scattered particles 12 a adhere to the surface of the piezoelectric vibrator 3, and the frequency changes to the low frequency side as the mass of the piezoelectric vibrator 3 increases.

  In this embodiment, in order to form the thin film 12 on the surface of the lid member 2, the scattering thin film 13 must be provided in advance on the surface of the base substrate 1. This thin film 13 is connected to the base substrate 1. When forming a pattern or the like, it is possible to simultaneously form them with the same material and under the same conditions. If there is no particular problem, a part of the wiring pattern or the like existing in advance on the base substrate 1 may be used. It may be used as it is as the thin film 13 for scattering, and productivity does not decrease.

  Further, in this embodiment, when the scattering thin film 13 is scattered, the laser 5 is focused near the surface layer of the base substrate 1, so that the base substrate 1 may be damaged by the laser 5. However, the strength of the base substrate 1 may be increased by providing a stepped portion 1a at a location where the thin film 13 is formed.

  Further, the stepped portion 1a may be provided in any region around the piezoelectric vibrator 3 as long as the scattered particles 13a of the thin film 13 reach the surface of the lid member 2, and the height thereof is also scattered by the particles 13a. What is necessary is just to set suitably after considering the range.

  FIG. 9 is a top view and a cross-sectional view showing a piezoelectric vibrator, and FIG. 10 is a cross-sectional view showing a frequency adjusting method of the piezoelectric vibrator of the present invention. The piezoelectric device shown here is a modification of the piezoelectric device shown in the fourth embodiment. The difference is that the upper surface of the stepped portion 1a provided on the inner surface of the base substrate 1 is inclined to the piezoelectric vibrator 3 side. The scattering thin film 13 is formed on the inclined surface.

  In the above-described piezoelectric device, when adjusting the frequency of the piezoelectric vibrator 3, the frequency of the piezoelectric vibrator 3 is set to a higher frequency side than the target value in the manufacturing stage in advance, as shown in the upper diagram of FIG. Next, a laser 5 having a wavelength band that passes through the lid member 2 is irradiated from the outer surface side of the lid member 2 so as to focus on the thin film 13 on the stepped portion 1a (inclined surface) of the base substrate 1, thereby ablating the laser. The thin film 13 is scattered as particles 13a by the action. The scattered particles 13a are affected by the inclination of the stepped portion 1a and adhere to the surface of the lid member 2 near the piezoelectric vibrator 3 from directly above the stepped portion 1a to newly form the thin film 12.

  Next, as shown in the lower diagram of FIG. 10, the laser 5 having a wavelength band that transmits the lid member 2 is irradiated from the outer surface side of the lid member 2 so as to focus on the thin film 12 on the inner surface of the lid member 2, The thin film 12 is scattered as particles 12a by the ablation action of the laser. The scattered particles 12 a adhere to the surface of the piezoelectric vibrator 3, and the frequency changes to the low frequency side as the mass of the piezoelectric vibrator 3 increases.

  In this embodiment, since the direction in which the particles 13a of the thin film 13 are scattered can be controlled by inclining the surface on which the scattering thin film 13 is formed, the degree of freedom in design increases. In addition, what is necessary is just to set suitably the inclination direction and inclination angle of an inclined surface according to the area | region to which the scattered particle 13a wants to adhere.

  FIG. 11 is a top view and a cross-sectional view showing a piezoelectric vibrator, and FIG. 12 is a cross-sectional view showing a frequency adjusting method for the piezoelectric vibrator of the present invention. The piezoelectric device shown here is a modification of the piezoelectric device shown in Example 4. As a difference, the scattering thin film 13 is formed on the step portion 1 a provided on the inner surface of the base substrate 1. The base material of the base substrate 1 is exposed as it is.

  In the above piezoelectric device, when adjusting the frequency of the piezoelectric vibrator 3, the frequency of the piezoelectric vibrator 3 is set to a higher frequency side than the target value in the manufacturing stage in advance, as shown in the upper diagram of FIG. 12. Then, a laser 5 having a wavelength band that passes through the lid member 2 is irradiated from the outer surface side of the lid member 2 so as to focus on the surface layer of the step portion 1a of the base substrate 1, and the surface layer of the step portion 1a is ablated by the laser Are scattered as particles 1b. The scattered particles 1b adhere to the surface of the lid member 2 facing the step portion 1a to newly form a thin film 12.

  Next, as shown in the lower diagram of FIG. 12, the laser 5 having a wavelength band that transmits the lid member 2 is irradiated from the outer surface side of the lid member 2 so as to focus on the thin film 12 on the inner surface of the lid member 2, The thin film 12 is scattered as particles 12a by the ablation action of the laser. The scattered particles 12 a adhere to the surface of the piezoelectric vibrator 3, and the frequency changes to the low frequency side as the mass of the piezoelectric vibrator 3 increases.

In this embodiment, since the material source of the thin film 12 is the base material itself of the base substrate 1, no new material is required to form the thin film 12 on the surface of the lid member 2.
There is no need.

  Note that the upper surface of the stepped portion 1a can be an inclined surface inclined toward the piezoelectric vibrator 3 as in the fifth embodiment.

  Although the present invention has been described with reference to several examples, the examples can be implemented in appropriate combination.

  In addition, the electronic component package is not limited to a flat base member bonded to a box-shaped base substrate, and may be, for example, a flat base substrate bonded to a box-shaped lid member.

In addition, the members that are primarily scattered by the laser to form a thin film on the inner surface of the electronic component package are all members existing in the internal space of the electronic component package without departing from the spirit of the present invention. .

  Further, the present invention is not only a piezoelectric device, but also an electronic component other than a piezoelectric vibrator that is required to externally process (remove, modify, melt, etc.) a thin film formed on the inner surface of an electronic component package. The present invention can also be applied to other electronic devices that store the battery.

DESCRIPTION OF SYMBOLS 1 Base substrate 1a Step part 1b Particle 2 Lid member 3 Piezoelectric vibrator 4 Thin film 4a Particle 5 Laser 6 Thin film 6a Particle 7 Through wiring 8 External connection terminal 11 Thin film 11a Particle 12 Thin film 12a Particle 13 Thin film 13a Particle

Claims (7)

The electronic component package whose inside is a sealed space is irradiated with a laser from the outside and transmitted, and the transmitted laser is irradiated to a predetermined region inside the electronic component package to at least part of the members existing in the predetermined region. A step of scattering as particles,
Forming the thin film by adhering the scattered particles to the inner surface of the electronic component package;
A step of the electronic component package is transmitted by irradiating laser from the outside, Ru the transmitted the laser is irradiated on the thin film by scattering the thin film as particles,
A thin film processing method characterized by comprising: Electronic component package is irradiated is transmitted through the laser from the outside, a step of scattering the transmitted the laser as particles at least a portion of the member present in the predetermined region by irradiating the electronic component inside the package of a predetermined area ,
Forming the thin film by adhering the scattered particles to the inner surface of the electronic component package;
Irradiating and transmitting the laser to the electronic component package from the outside, irradiating the transmitted laser to the thin film and scattering the thin film as particles; and
Adhering the scattered particles to a piezoelectric vibrator housed in the electronic component package to adjust the frequency of the piezoelectric vibrator;
A method for adjusting the frequency of a piezoelectric vibrator, comprising:   3. The frequency adjustment method for a piezoelectric vibrator according to claim 2, wherein the member present in the predetermined region is a frequency adjustment thin film formed on a surface of the piezoelectric vibrator.   The method of claim 2, wherein the member existing in the predetermined region is a base material of the piezoelectric vibrator.   The method for adjusting a frequency of a piezoelectric vibrator according to claim 2, wherein the member existing in the predetermined region is a thin film formed on an inner surface of the electronic component package.   The method of claim 2, wherein the member existing in the predetermined region is a base material of the electronic component package. 7. The method of adjusting a frequency of a piezoelectric vibrator according to claim 5, wherein an inner surface of the electronic component package on which the thin film is formed is an inclined surface inclined toward the piezoelectric vibrator side.

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