JP5771136B2 - Resin-encapsulated power semiconductor module and manufacturing method thereof - Google Patents

Description

  The present invention relates to a resin-sealed power semiconductor module in which a circuit on which a semiconductor switching element for power conversion is mounted is resin-sealed, and a method for manufacturing the same.

Patent Documents 1 and 2 describe power semiconductor modules.
In the power semiconductor module described in Patent Document 1, a resin frame made of a thermoplastic resin is provided so as to surround a circuit on which a semiconductor switching element is mounted, and the inside of the resin frame is filled with a thermosetting resin. .
The thermoplastic resin has the property of easily causing warpage to the heat sink and the semiconductor chip due to its curing and thermal shrinkage, while the curing time is short and productivity can be improved.
The thermosetting resin has a longer curing time than the thermoplastic resin and is expensive. On the other hand, the thermosetting resin has small curing and thermal shrinkage, and can achieve good insulation performance. Therefore, in Patent Document 1, the circuit portion is filled with a thermosetting resin.

On the other hand, the number of chips mounted on the power semiconductor module is increasing and the circuit area is increasing more and more in order to meet the increasing demand for high power applications.
In that case, as described in Patent Document 2, the main terminal used for input / output of the conversion power is arranged in the center on the circuit surface, and the wiring length to each semiconductor switching element is made as short and as uniform as possible. It is desired as a module structure that the main terminals are stacked in a stacked manner.
Since the wiring length is short and the main terminals are stacked in layers, wiring inductance can be reduced and heat loss can be reduced. Since the wiring length to each semiconductor switching element is uniform, the simultaneity of operation of each semiconductor switching element is improved.

JP 2010-50395 A JP 2008-294362 A

In the power semiconductor modules of Patent Documents 1 and 2, the semiconductor element and the wiring pattern on the substrate are connected by wires, and the inner end portion of the external lead-out terminal is joined to the wiring pattern.
With such a wiring connection structure, a large number of wiring junctions from the semiconductor element to the external lead-out terminal occur, so that the possibility of defective wiring junctions increases. In addition, for high power applications, the number of wires must be increased and the contact area between the external lead-out terminal and the wiring pattern must be increased. As a result, the wiring bonding area other than the element bonding area increases in terms of area. This will increase the size of the module.

Therefore, when the inner end portion of the external lead-out terminal and the semiconductor element are directly wire-bonded, the wiring joint portion is reduced from the semiconductor element to the external lead-out terminal, and the area of the wiring joint region is also reduced.
However, with such a wiring connection structure, the external lead-out terminal must be arranged at a predetermined position on the circuit board and fixed to the circuit board during the wire bonding process. When adopting a structure in which the main terminals are stacked in a laminated form, it is necessary to arrange the main terminals with high accuracy, and when filling the gap between the main terminals with a resin, a high resin injection pressure is required. If this is done after wire bonding, the possibility of deformation or poor bonding in the wire is increased. It is difficult to properly use the resin that fills the gap between the main terminals and the resin that covers the wire or the semiconductor element, and it is difficult to mold a large product.

  The present invention has been made in view of the above problems in the prior art, and includes a resin-sealed power semiconductor module in which a circuit on which a semiconductor switching element for power conversion is mounted is resin-sealed, and a method for manufacturing the same. Improve reliability, productivity, and cost in order to cope with higher power by improving inductance reduction, simultaneous operation of each semiconductor switching element, resin filling and applicability. Is an issue.

The invention according to claim 1 for solving the above-described problems includes a wiring board having a wiring pattern formed on a surface thereof,
A semiconductor switching element for power conversion in which the back surface is electrically and mechanically joined to the wiring pattern;
First and second electrode lead-out terminals for leading two current output / input electrodes of the semiconductor switching element to the outside,
Third and fourth electrode lead-out terminals that lead out the two control electrodes of the semiconductor switching element to the outside,
A resin case that is fixed to the wiring board and has an opening on the bottom surface that exposes a formation region of the wiring pattern;
A terminal holding resin that fits inside the resin case and is fixed integrally with the resin case, and holds the first to fourth electrode lead-out terminals;
Each of the first to fourth electrode lead-out terminals is made of a bent metal plate, arranged to be exposed on the upper surface of the terminal holding resin, and exposed at a position lower than the external connection part. An internal connection portion arranged and exposed so as to be laid on the upper surface of the terminal holding resin, and an intermediate portion embedded between the external connection portion and the internal connection portion and embedded in the terminal holding resin;
The terminal holding resin includes a first crossover portion in which the external connection portion is disposed and the intermediate portion is embedded and held, and a second crossover portion that supports the internal connection portions of the first and second electrode lead-out terminals. Have
The first transition part is arranged so as to cross from the central part of one side of the resin case to the central part of the opposite side, and divides the space in the resin case into two parts,
The second connecting portion and the internal connection portions of the first and second electrode lead-out terminals supported by the second extending portion are extended from the central portion of the first connecting portion on both sides, respectively. Each space divided into two by the crossover is further divided into two,
The intermediate portion of the second electrode lead-out terminal is disposed over a part of the intermediate portion of the first electrode lead-out terminal with a gap therebetween, and the gap is filled with the resin constituting the terminal holding resin. ,
The internal connection portion of the second electrode lead-out terminal overlaps with an interval above the central portion in the width direction of the internal connection portion of the first electrode lead-out terminal, and the terminal holding resin is configured in the interval And the upper surface of the internal connection portion of the second electrode lead-out terminal is exposed to form a wire bonding region, and the internal connection portion of the first electrode lead-out terminal is connected to the second electrode lead-out terminal. Exposed on both sides of the internal connection to form a wire bonding area,
The wiring pattern formation region is divided into four parts separated from each other, and is arranged so as to face the space divided into four parts by the first transition part and the second transition part, respectively.
In each of the four divided spaces, the wiring pattern to which the semiconductor switching element is bonded and the internal connection portion of the first electrode lead-out terminal are wire-bonded and formed on the surface of the semiconductor switching element. The electrode and the internal connection portion of the second electrode lead-out terminal are wire bonded,
The resin case and the terminal holding resin are made of a thermoplastic resin,
It is a resin-sealed power semiconductor module in which each of the four divided spaces is filled with a thermosetting resin and an electric circuit is sealed.

According to a second aspect of the present invention, the internal connection portion of the third electrode lead-out terminal extends from both end portions of the first crossing portion to both sides to expose the upper surface and from the formation region of the wiring pattern. Form a wire bonding area on the outside,
2. The resin sealing according to claim 1, wherein an internal connection portion of the third electrode lead-out terminal is connected to a control electrode formed on a surface of the semiconductor element by wire bonding in each of the four divided spaces. Type power semiconductor module.

According to a third aspect of the present invention, the internal connection portion of the fourth electrode lead-out terminal protrudes from the central portion of the first transition portion and is spaced above the internal connection portion of the second electrode lead-out terminal. Overlapping, exposing the upper surface to form a wire bonding area,
The resin-encapsulated power semiconductor module according to claim 1 or 2, wherein the internal connection portion of the second electrode lead-out terminal and the internal connection portion of the fourth electrode lead-out terminal are wire-bonded.

  According to a fourth aspect of the present invention, there is provided an assembly composed of the resin case and the terminal holding resin, each of the outer peripheral space of the resin case and the four divided spaces on a side parallel to the second transition portion. A resin-sealed power according to any one of claims 1 to 3, wherein a side wall is formed in which a notch is formed to be adjacent and communicated, and the notch is closed by the thermosetting resin. It is a semiconductor module.

The invention according to claim 5 is characterized in that the resin case and the terminal holding resin are subjected to a rough surface processing on an inner surface exposed in the space divided into four parts.
The resin-encapsulated power semiconductor module according to any one of claims 1 to 4, wherein the thermosetting resin is bonded to the inner surface.

When manufacturing the resin-sealed power semiconductor module according to claim 1, the invention according to claim 6 is
Molding the resin case, molding the terminal holding resin to hold the electrode lead-out terminal,
Thereafter, assembling the wiring board with the elements mounted thereon, the resin case, and the terminal holding resin holding the electrode lead-out terminals,
Then connect the internal wiring,
Then, the method for manufacturing a resin-encapsulated power semiconductor module in which the thermosetting resin is filled from above the four divided spaces.

The invention according to claim 7 is to manufacture the resin-encapsulated power semiconductor module according to claim 4.
A method for manufacturing a resin-encapsulated power semiconductor module in which the thermosetting resin is injected and filled from the notch.

The invention according to claim 8 is to manufacture the resin-encapsulated power semiconductor module according to claim 5.
When molding the resin case, transfer the roughened processed surface of the mold for molding the resin case to the resin constituting the resin case,
When molding the terminal holding resin, transfer the roughened processed surface of the mold for molding the terminal holding resin to the resin constituting the terminal holding resin,
Thereafter, a method for manufacturing a resin-encapsulated power semiconductor module in which the thermosetting resin is bonded to the inner surface of the resin case that has been roughened by the transfer and the terminal holding resin exposed to the four divided spaces. It is.

According to the present invention, part of the first and second electrode lead-out terminals from which current is input and output are arranged in parallel with each other with a predetermined gap therebetween, so that the reduction of wiring inductance is good. Become.
According to the present invention, the first and second electrode lead-out terminals pass through the central portion where the first transition portion and the second transition portion of the terminal holding resin intersect with each other. The semiconductor switching elements can be led out to the external connection portions of the first and second electrode lead-out terminals with a uniform wiring length, and the simultaneity of the operation of each semiconductor switching element is improved.
According to the present invention, since the resin case and the terminal holding resin are molded separately, the thermoplastic resin can be used in the molding conditions suitable for the resin case, the molding conditions suitable for the terminal holding resin, and the yield and the productivity can be improved. As for the terminal holding resin, the resin filling property to the interval between the electrode lead-out terminals can be also made well, and the resin filled in each of the spaces in the resin case divided into four by the terminal holding resin Since thermosetting resin is applied, it can be sealed with good insulation performance without causing deformation, breakage, or peeling of elements such as wiring boards, semiconductor elements, and bonding wires due to injection pressure or curing shrinkage. . Therefore, the filling property and applicability of the resin to the circuit are good.
As described above, the present invention improves reliability, productivity, and cost in order to cope with high power.

1 is a perspective view of a resin-encapsulated power semiconductor module according to an embodiment of the present invention. It is a top view of the resin-sealed power semiconductor module which concerns on one Embodiment of this invention. It is sectional drawing about the AA line shown in FIG. It is a top view of the resin sealing type power semiconductor module which concerns on one Embodiment of this invention, Comprising: It is a figure of the state except the thermosetting sealing resin. 1 is a perspective view of a resin-encapsulated power semiconductor module according to an embodiment of the present invention, and shows a state in which a thermosetting sealing resin and a bonding wire are removed. FIG. 1 is a perspective view of a resin-encapsulated power semiconductor module according to an embodiment of the present invention, in which a thermosetting sealing resin, a bonding wire, and a terminal holding block are removed. It is a perspective view of the resin case which concerns on one Embodiment of this invention. It is a perspective view of the terminal holding block concerning one embodiment of the present invention. It is a perspective view of the electrode derivation | leading-out terminal in arrangement | positioning with the terminal holding block which concerns on one Embodiment of this invention. It is the side view which looked at FIG. 9 in the Y direction. FIG. 10 is a side view of FIG. 9 viewed in the X direction. It is a perspective view of the resin case which concerns on one Embodiment of this invention and roughened the surface to which the thermosetting sealing resin was attached. It is a perspective view of the terminal holding block which concerns on one Embodiment of this invention and the roughening process was given to the adherence surface of the thermosetting sealing resin. It is an equivalent circuit diagram of the power semiconductor module which concerns on one Embodiment of this invention.

  An embodiment of the present invention will be described below with reference to the drawings. The following is one embodiment of the present invention and does not limit the present invention.

First, a resin-encapsulated power semiconductor module according to an embodiment of the present invention will be described with reference to FIGS.
1, a resin-encapsulated power semiconductor module 100 according to this embodiment includes a wiring board 1, first to fourth electrode lead terminals C 1, E 2, G 3, E 4, a resin case 2, and a terminal holding resin 3. And a thermosetting sealing resin 4. The first to fourth electrode lead terminals C1, E2, G3, E4 and the terminal holding resin 3 are combined to form a terminal holding block 5. Further, the module 100 includes an IGBT chip 6A as a semiconductor switching element, an FRD chip 6B connected in parallel with the IGBT chip 6A, and a bonding wire 7. FIG. 1 is a perspective view, FIG. 2 is a plan view, and FIG. 3 is a cross-sectional view of the complete module 100. 4 shows a state where the thermosetting sealing resin 4 is removed, FIG. 5 shows a state where the bonding wire 7 is further removed, and FIG. 6 shows a state where the terminal holding block 5 is further removed. FIG. 7 is a perspective view of the resin case 2 alone. FIG. 8 is a perspective view of the terminal holding block 5 alone, and the shapes and relative arrangements of the first to fourth electrode lead terminals C1, E2, G3, and E4 are clearly shown in FIGS. 12 and 13 are used to clearly indicate the rough surface processing region. For reference, an equivalent circuit diagram is shown in FIG. For the sake of brevity, the symbol of the electrode and the symbol of the corresponding electrode lead-out terminal are made common.

The wiring board 1, the resin case 2, and the entire module 100 form a rectangular outer shape. The cross-shaped terminal holding block 5 fits inside the resin case 2 to form a space in the resin case 2 that is divided into four.
In the wiring board 1, four ceramic layers 1b (see FIGS. 3 and 4) are bonded as insulation layers on a copper plate 1a (see FIG. 3), and a predetermined shape and number of wiring patterns 1c (on the ceramic layer 1b). (See FIG. 4). The copper plate 1a has a size that is at least enough to cover all four bottom openings 2a (see FIG. 7) of the resin case 2. The four ceramic layers 1b are arranged one by one in the region exposed to the bottom surface opening 2a, and are formed apart from each other. As shown in FIG. 4, the wiring pattern 1c on each ceramic layer 1b is composed of the same or rotationally symmetric pattern.

  The IGBT chip 6A and the FRD chip 6B are die-bonded on the wiring pattern 1c, respectively. Three IGBT chips 6A and three FRD chips 6B are mounted on one ceramic layer 1b. The back surface of the IGBT chip 6A is a collector electrode. An emitter electrode and a gate electrode are provided on the surface of the IGBT chip 6A. Connection of the FRD chip 6B is as shown in FIG.

  The first and second electrode lead terminals C <b> 1 and E <b> 2 are input / output terminals for current generated by the module 100. The first electrode lead-out terminal C1 leads the collector electrode C1 of the IGBT chip 6A to the outside. The second electrode lead-out terminal E2 leads the emitter electrode E2 of the IGBT chip 6A to the outside.

  The third and fourth electrode lead-out terminals G3 and E4 lead out two control electrodes for applying a voltage for switching the IGBT chip 6A to the outside. The third electrode lead terminal G3 leads the gate electrode G3 of the IGBT chip 6A to the outside. The fourth electrode lead-out terminal E4 auxiliaryly leads the emitter electrode E4 (electrically equivalent to the electrode E2) of the IGBT chip 6A to the outside for input of a control signal.

  As shown in FIGS. 9 to 11, the first to fourth electrode lead terminals C1, E2, G3, E4 are made of bent metal plates, respectively, and external connection portions C1a, E2a, G3a, E4a, It has an internal connection portion C1b, E2b, G3b, E4b and intermediate portions C1c, E2c, G3c, E4c between them, and is arranged by the terminal holding resin 3 in the arrangement shown in FIGS. It is held together.

As shown in FIG. 8, the terminal holding resin 3 includes a first transition part 3a, a second transition part 3b, and a protruding part 3c. As shown in FIG. 5, the first transition part 3 a is arranged so as to extend from the central part of one side S <b> 1 of the resin case 2 to the central part of the opposite side S <b> 2, and divides the space in the resin case 2 into two parts.
The second connecting portion 3b and the internal connection portions C1b and E2b of the first and second electrode lead terminals supported by the second extending portion 3b are respectively extended from the central portion of the first connecting portion 3a to both sides, Each space divided into two by the crossover part 3a is further divided into two.
As described above, the ceramic layer 1b and the wiring pattern 1c thereon face each space in the resin case 2 divided into four.

The internal connection portion G3b of the third electrode lead-out terminal G3 extends from both ends of the first crossover portion 3a to both sides, and the upper surface is exposed to form a wire bonding region.
The projecting portions 3c that support the internal connection portion G3b are formed to project on both sides at each end of the first crossover portion 3a and are provided in total, and are provided outside the ceramic layer 1b (wiring pattern forming region). Has been placed. The extending direction of the second transition part 3b and the projecting direction of the protrusion part 3c are perpendicular to the extending direction of the first transition part 3a and are along the sides S1 and S2.
An internal connection portion E4b of the fourth electrode lead-out terminal E4 protrudes from the central portion of the first transition portion 3a and is provided above the internal connection portion E2b of the second electrode lead-out terminal E2 with a space therebetween, Is exposed to form a wire bonding region.
Between the internal connection part C1b of the first electrode lead-out terminal C1 and the internal connection part E2b of the second electrode lead-out terminal E2, between the internal connection part E2b of the second electrode lead-out terminal E2 and the fourth electrode lead-out terminal E4 Between the internal connection portion E4b, a thermoplastic resin constituting the terminal holding resin 3 is filled.

The external connection portions C1a, E2a, G3a, and E4a are arranged so as to be laid on the upper surface of the first crossover portion 3a, and are also exposed to the outside in the completed body of FIGS. 1 and 2, and a hole for wiring connection is formed. ing. A nut (not shown) is disposed on the back side of the hole and is embedded in the first transition portion 3a.
The intermediate parts C1c, E2c, G3c, E4c are embedded in the first transition part 3a.
The internal connection portions C1b, E2b, G3b, and E4b are arranged so as to be laid on the upper surface of the terminal holding resin 3 at positions lower than the external connection portions C1a, E2a, G3a, and E4a, and are exposed at positions in the resin case 2.
The internal connection portions C1b, E2b, and E4b of the first, second, and third electrode lead terminals are supported by the second transition portion 3b, and the internal connection portions G3b of the fourth electrode lead terminal. The former is disposed between the two ceramic layers 1b (wiring pattern formation region), and the latter is disposed outside the two ceramic layers 1b.

As shown in FIGS. 9 to 11, the intermediate portion E2c of the second electrode lead terminal E2 is spaced above a part of the horizontal portion parallel to the wiring board 1 of the intermediate portion C1c of the first electrode lead terminal C1. The thermoplastic resin constituting the terminal holding resin 3 is filled in the gap. A part of the intermediate part G3c of the third electrode lead-out terminal G3 and a part of the intermediate part E4c of the fourth electrode lead-out terminal E4 also overlap with these.
The internal connection portion C1b of the first electrode lead-out terminal C1 is disposed below the internal connection portion E2b of the second electrode lead-out terminal E2. The internal connection portion G3b of the third electrode lead-out terminal G3 is disposed at the bottom, and the internal connection portion E4b of the fourth electrode lead-out terminal E4 is disposed at the top.

  As shown in FIG. 5 and the like, the internal connection portion E2b of the second electrode lead-out terminal E2 is disposed so as to overlap with a space above the central portion in the width direction of the internal connection portion C1b of the first electrode lead-out terminal C1. ing. This interval is filled with a thermoplastic resin constituting the terminal holding resin 3. The vertical distance between the intermediate part C1c and the intermediate part E2c and the vertical distance between the internal connection part C1b and the internal connection part E2b are in the reverse direction flowing through the first electrode lead-out terminal C1 and the second electrode lead-out terminal E2. It is designed so that the mutual inductance is reduced by electromagnetic cancellation of the current and the resin can be sufficiently filled, and in this embodiment, it is 1.5 mm. The dimension of the minimum vertical distance between the other electrode lead-out terminals is also 1.5 mm.

The upper surface of the internal connection portion E2b of the second electrode lead-out terminal E2 is exposed to form a wire bonding region, and the internal connection portion C1b of the first electrode lead-out terminal C1 is the internal connection portion E2b of the second electrode lead-out terminal E2. A wire bonding region is formed by being exposed on both sides.
As shown in FIG. 4, in each of the four divided spaces in the resin case 2, the wiring pattern 1c in which the back surface of the IGBT chip 6A and the back surface of the FRD chip 6B are joined, and the first electrode lead-out terminal C1 The internal connection portion C1b is connected by a bonding wire 7. Further, the emitter electrode formed on the surface of the IGBT chip 6A and the electrode formed on the surface of the FRD chip 6B are connected to the internal connection portion E2b of the second electrode lead-out terminal E2 by the bonding wire 7. The gate electrode formed on the surface of the IGBT chip 6A is connected to the internal connection portion G3b of the third electrode lead-out terminal G3 by the bonding wire 7 via the wiring pattern 1c.
Furthermore, the internal connection portion E2b of the second electrode lead-out terminal E2 and the internal connection portion E4b of the fourth electrode lead-out terminal E4 are connected by the bonding wire 7.

The resin case 2 and the terminal holding resin 3 are made of a thermoplastic resin such as a PPS (polyphenylene sulfide) resin.
As shown in FIG. 7 and the like, the resin case 2 includes a plate-like bottom surface member 2b having the above-described bottom surface opening 2a and an outer wall portion 2c erected on the periphery thereof. In the bottom surface member 2b, the bottom surface opening 2a and the other bottom surface opening 2a are separated from each other to form a surface on which the terminal holding block 5 is placed, and the terminal holding block 5 is disposed inside the outer wall portion 2c. The fitting part 2d which fits is formed.
Three cutouts 2e for injecting the thermosetting sealing resin 4 are formed in the outer wall portion 2c. Further, as shown in FIG. 5, the terminal holding block 5 is fitted inside the resin case 2, and the resin case 2 and the terminal holding block 5 are integrally fixed, so that the thermosetting sealing resin 4 is formed. Two other notches 2e for injection are formed.
Further, the resin case 2 and the wiring board 1 are fixed to form an assembly including the wiring board 1, the resin case 2, and the terminal holding block 5 shown in FIG.
Furthermore, as described above, the internal wiring is connected by the bonding wire 7, and each of the four divided spaces in the resin case 2 is filled with the thermosetting sealing resin 4 to seal the internal electric circuit, The configuration shown in FIGS. 1 to 3 is formed.

It will be as follows if it demonstrates along a manufacturing procedure anew.
The resin case 2 is molded, the terminal holding block 5 is manufactured, and the chips 6A and 6B are mounted on the wiring board 1, respectively.
In producing the terminal holding block 5, first, the electrode lead terminals C1, E2, G3, and E4 are respectively formed by pressing, and these are placed in a molding die, filled with a thermoplastic resin, and cured. Thus, the terminal holding resin 3 is formed. Since the electrode lead-out terminals C1, E2, G3, and E4 are formed up to the shape of the finished product at the time of this press forming, the bending process is only required once, which is more efficient than when the external connection portion is bent later. It is.

Thereafter, the chip-mounted wiring board 1, the resin case 2, and the terminal holding block 5 are assembled as described above.
Thereafter, the internal wiring is connected by wire bonding as described above.
Thereafter, the circuit is sealed and the thermosetting sealing resin 4 is molded by filling the thermosetting resin with a dispenser or the like from above the space divided into four in the resin case 2 and the second transition part 3b. To do. At this time, the notch 2 e is closed by the thermosetting sealing resin 4.

  As another molding method for the thermosetting sealing resin 4, after the internal wiring connection step, the thermosetting resin is formed from the four notches 2e formed in the sides S1 and S2 parallel to the second transition portion 3b. By injecting and filling the resin case 2, the thermosetting sealing resin 4 is formed. The remaining one notch 2e can be used as an exhaust port. The notch 2e may be added. However, by providing four notches 2e that are directly connected to each of the four divided spaces and can inject resin in parallel with the bonding wire 7, it is possible to suppress the load applied to the bonding wire 7 at the time of resin injection. Can be injected.

In the resin case 2 and the terminal holding resin 3, it is possible to improve the bonding force with the thermosetting sealing resin 4 by roughening the surface as follows.
That is, when molding the resin case 2, the roughened molding surface of the mold for molding the resin case 2 is transferred to the thermoplastic resin constituting the resin case. Similarly, when the terminal holding resin 3 is molded, the roughened molding surface of the mold for molding the terminal holding resin 3 is transferred to the thermoplastic resin constituting the terminal holding resin 3. Thereby, as shown in FIGS. 12 and 13, the inner surface S exposed in the space divided into four in the resin case 2 of the resin case 2 and the terminal holding resin 3 is roughened. Roughening of the mold can be performed by plasma discharge machining or the like.
Thereafter, the thermosetting sealing resin 4 is formed on the inner surface S of the resin case 2 and the terminal holding resin 3 subjected to the rough surface processing by molding the thermosetting sealing resin 4 by any of the methods described above. Join.

According to the resin-encapsulated power semiconductor module 100 of the present embodiment as described above, the 12 IGBT chips 6A and the 12 FRD chips 6B can flow a large current, and can be applied to high power applications. it can.
Thus, even if the number of chips is large, the external connection portion is arranged in the first crossover portion 3a crossing the center, and the internal connection portion extends from the center portion of the first crossover portion 3a to the two wiring pattern formation regions. Therefore, the connection is made with a relatively short wiring, the difference in the wiring length depending on the chip position is alleviated, and the switching simultaneity is improved. At the same time, part of the first and second electrode lead-out terminals are arranged in parallel with each other at a predetermined interval, so that the wiring inductance can be reduced.
The internal wiring is efficient because it is performed by wire bonding directly to the internal connection part of the electrode lead-out terminal, and the external connection part and the intermediate part of the electrode lead-out terminal are accommodated in the first transition part 3a. Does not interfere with wire bonding work.
Since the resin case 2 and the terminal holding resin 3 are molded separately, a thermoplastic resin can be used to achieve good productivity and cost performance under molding conditions suitable for the resin case 2 and molding conditions suitable for the terminal holding resin 3. Respectively. With respect to the terminal holding resin 3, the resin filling property to the interval between the electrode lead-out terminals can also be made well. Since a thermosetting resin is applied as the resin that seals the internal connection portions of the wiring pattern 1c, the semiconductor elements 6A and 6B, the bonding wires 7, and the electrode lead-out terminals, the wiring substrate 1 and the semiconductor element 6A are injected by injection pressure or curing shrinkage. , 6B, bonding wire 7 and the like can be sealed with good insulation performance without causing deformation, destruction, or peeling.
As described above, a highly reliable power semiconductor module corresponding to a high power application can be configured with good productivity and cost.

DESCRIPTION OF SYMBOLS 1 Wiring board 1a Copper plate 1b Ceramic layer 1c Wiring pattern 2 Resin case 2a Bottom opening 2b Bottom surface member 2c Outer wall part 2d Fitting part 2e Notch 3 Terminal holding resin 3a First transition part 3b Second transition part 3c Protrusion part 4 Heat Curable sealing resin 5 Terminal holding block 6A IGBT chip (semiconductor switching element)
6B FRD chip 7 Bonding wire 100 Resin-encapsulated power semiconductor module C1 Collector electrode and its electrode lead terminal C1a External connection part C1b Internal connection part C1c Intermediate part E2 Emitter electrode and its electrode lead terminal E2a External connection part E2b Internal connection part E2c Intermediate part G3 Gate electrode and electrode lead terminal G3a External connection part G3b Internal connection part G3c Intermediate part E4 Auxiliary emitter electrode and electrode lead terminal E4a External connection part E4b Internal connection part E4c Intermediate part

Claims (8)

A wiring board having a wiring pattern formed on the surface;
A semiconductor switching element for power conversion in which the back surface is electrically and mechanically joined to the wiring pattern;
First and second electrode lead-out terminals for leading two current output / input electrodes of the semiconductor switching element to the outside,
Third and fourth electrode lead-out terminals that lead out the two control electrodes of the semiconductor switching element to the outside,
A resin case that is fixed to the wiring board and has an opening on the bottom surface that exposes a formation region of the wiring pattern;
A terminal holding resin that fits inside the resin case and is fixed integrally with the resin case, and holds the first to fourth electrode lead-out terminals;
Each of the first to fourth electrode lead-out terminals is made of a bent metal plate, arranged to be exposed on the upper surface of the terminal holding resin, and exposed at a position lower than the external connection part. An internal connection portion arranged and exposed so as to be laid on the upper surface of the terminal holding resin, and an intermediate portion embedded between the external connection portion and the internal connection portion and embedded in the terminal holding resin;
The terminal holding resin includes a first crossover portion in which the external connection portion is disposed and the intermediate portion is embedded and held, and a second crossover portion that supports the internal connection portions of the first and second electrode lead-out terminals. Have
The first transition part is arranged so as to cross from the central part of one side of the resin case to the central part of the opposite side, and divides the space in the resin case into two parts,
The second connecting portion and the internal connection portions of the first and second electrode lead-out terminals supported by the second extending portion are extended from the central portion of the first connecting portion on both sides, respectively. Each space divided into two by the crossover is further divided into two,
The intermediate portion of the second electrode lead-out terminal is disposed over a part of the intermediate portion of the first electrode lead-out terminal with a gap therebetween, and the gap is filled with the resin constituting the terminal holding resin. ,
The internal connection portion of the second electrode lead-out terminal overlaps with an interval above the central portion in the width direction of the internal connection portion of the first electrode lead-out terminal, and the terminal holding resin is configured in the interval And the upper surface of the internal connection portion of the second electrode lead-out terminal is exposed to form a wire bonding region, and the internal connection portion of the first electrode lead-out terminal is connected to the second electrode lead-out terminal. Exposed on both sides of the internal connection to form a wire bonding area,
The wiring pattern formation region is divided into four parts separated from each other, and is arranged so as to face the space divided into four parts by the first transition part and the second transition part, respectively.
In each of the four divided spaces, the wiring pattern to which the semiconductor switching element is bonded and the internal connection portion of the first electrode lead-out terminal are wire-bonded and formed on the surface of the semiconductor switching element. The electrode and the internal connection portion of the second electrode lead-out terminal are wire bonded,
The resin case and the terminal holding resin are made of a thermoplastic resin,
A resin-sealed power semiconductor module in which each of the four divided spaces is filled with a thermosetting resin to seal an electric circuit. Internal connection portions of the third electrode lead-out terminals are extended from both ends of the first transition portion to both sides to expose the upper surface and form a wire bonding region outside the wiring pattern formation region. ,
2. The resin sealing according to claim 1, wherein an internal connection portion of the third electrode lead-out terminal is connected to a control electrode formed on a surface of the semiconductor element by wire bonding in each of the four divided spaces. Type power semiconductor module. An internal connection portion of the fourth electrode lead-out terminal protrudes from a central portion of the first crossover portion and is provided to be overlapped with a space above the internal connection portion of the second electrode lead-out terminal, exposing an upper surface. To form a wire bonding area,
The resin-encapsulated power semiconductor module according to claim 1 or 2, wherein the internal connection portion of the second electrode lead-out terminal and the internal connection portion of the fourth electrode lead-out terminal are wire-bonded. The assembly comprising the resin case and the terminal holding resin has a notch that allows the outer peripheral space of the resin case and each of the four divided spaces to communicate with each other on a side parallel to the second transition portion. 4. The resin-encapsulated power semiconductor module according to claim 1, wherein the notch is closed with the thermosetting resin. The resin case and the terminal holding resin are roughened on the inner surface exposed in the four divided spaces,
The resin-encapsulated power semiconductor module according to claim 1, wherein the thermosetting resin is bonded to the inner surface. In manufacturing the resin-encapsulated power semiconductor module according to claim 1,
Molding the resin case, molding the terminal holding resin to hold the electrode lead-out terminal,
Thereafter, assembling the wiring board with the elements mounted thereon, the resin case, and the terminal holding resin holding the electrode lead-out terminals,
Then connect the internal wiring,
Then, the manufacturing method of the resin-encapsulated power semiconductor module in which the thermosetting resin is filled from above the four divided spaces. In manufacturing the resin-encapsulated power semiconductor module according to claim 4,
A method for manufacturing a resin-encapsulated power semiconductor module, in which the thermosetting resin is injected and filled from the notch. In manufacturing the resin-encapsulated power semiconductor module according to claim 5,
When molding the resin case, transfer the roughened processed surface of the mold for molding the resin case to the resin constituting the resin case,
When molding the terminal holding resin, transfer the roughened processed surface of the mold for molding the terminal holding resin to the resin constituting the terminal holding resin,
Thereafter, a method for manufacturing a resin-encapsulated power semiconductor module in which the thermosetting resin is bonded to the inner surface of the resin case that has been roughened by the transfer and the terminal holding resin exposed to the four divided spaces. .

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