JP5772441B2 - Manufacturing method of angle detection sensor - Google Patents

Description

The present invention relates to a process for the preparation of the angle detection sensor.

  As a known technique, a magnetic sensor that detects a rotation angle of an object using a GMR element (Giant Magneto Resistance; GMR) or a TMR element (Tunneling Magneto Resistance; TMR) having a free magnetic layer and a pinned magnetic layer is known. Yes. In these elements, the angle can be detected by changing the output of the element due to the difference between the magnetization direction of the pinned magnetic layer fixed in one direction and the magnetization direction of the free magnetic layer affected by the external magnetic field.

  Usually, the magnetization direction of the pinned magnetic layer is determined by annealing at about 300 ° C. while applying a magnetic field (see, for example, Patent Document 1). In this case, since each pin magnetic layer is magnetized while applying a magnetic field to the entire wafer on which a plurality of elements are formed, the magnetization directions of the pin magnetic layers are all the same in one wafer. For this reason, the output signal is either a cos curve or a sin curve, and 360 ° detection with one element cannot be performed.

  Therefore, in order to enable detection at 360 °, a structure in which the cos curve and the sin curve are obtained by arranging the two chips so that the magnetization directions of the pinned magnetic layers are different by 90 ° is required. In order to realize this structure, conventionally, as described above, a plurality of elements having pin magnetic layers having the same magnetization direction are formed on one wafer, and the wafer is divided into chips for each element. The two chips were packaged so that the angles are 90 ° to each other.

Japanese Patent No. 4292128

  However, in the above conventional technique, since a large number of chips having the same magnetization direction are formed on one wafer, the number of chips having the same magnetization direction is increased, leading to an increase in cost. In addition, the orientation of the chip has to be controlled so that the magnetization directions of the pinned magnetic layers are 90 ° to each other, and there is a possibility that the rotation detection accuracy may be reduced due to an assembly error. For this reason, there is a need for a pin magnetic layer multipolar technique that provides many magnetization directions in one wafer.

The present invention has been made in view of the above point, the purpose thereof is to provide a method of manufacturing an angle detection sensor of the plurality of pins magnetic layer of the magnetoresistive element portion provided in a single substrate can be magnetized in different directions.

  In order to achieve the above object, the invention according to claim 1 includes a substrate (10) having one surface (13) and the other surface (14) opposite to the one surface (13). Further, it has a free magnetic layer (22c) in which the direction of magnetization changes under the influence of an external magnetic field, and a pinned magnetic layer (22a) in which the direction of magnetization is fixed. 13) includes a plurality of magnetoresistive element portions (22) formed above.

  The plurality of magnetoresistive element portions (22) include those in which the magnetization direction of the pinned magnetic layer (22a) differs in the plane direction parallel to the one surface (13) of the substrate (10). A method of manufacturing an angle detection sensor for detecting a physical quantity based on a change in resistance value of a plurality of magnetoresistive element portions (22) when the resistive element portion (22) is affected by an external magnetic field. Characterized by dots.

  First, a step of preparing a substrate (10) is performed. Next, the element part formation process which forms a some magnetoresistive element part (22) above one surface (13) of a board | substrate (10) is performed. Then, the through-hole formation process which forms the through-hole (15) which penetrates from one surface (13) to another surface (14) in a board | substrate (10) is performed.

  And the electric current which forms the linear current supply line (40) into which an electric current flows into the other through the through-hole (15) from either one side (13) side of the board | substrate (10) and the other surface (14) side. A route forming step is performed.

  Thereafter, a current is passed through the current supply line (40) to generate a concentric magnetic field around the current supply line (40), and the entire substrate (10) is heated. By performing annealing in a magnetic field, magnetization is performed so that the magnetization directions of the pinned magnetic layers (22a) constituting the plurality of magnetoresistive element portions (22) are respectively directed to the tangential direction of the concentric magnetic field. A magnetic process is performed.

According to this, since a concentric magnetic field centering on the current supply line (40) can be formed around the through hole (15), the magnetic field can be changed according to the location on the one surface (13) of the substrate (10). The direction can be different. For this reason, even if a plurality of magnetoresistive element portions (22) are formed above one surface (13) of the substrate (10), the pinned magnetic layer (22) of each magnetoresistive element portion (22) is formed in one magnetizing step. 22a) can be magnetized in different directions. Therefore, multipolarization of the pin magnetic layer (22a) can be realized.
The invention described in claim 1 is characterized in that a plurality of portions serving as angle detection sensors are formed on a chip wafer and magnetized together. Therefore, according to the first aspect of the present invention, in the step of preparing the substrate (10), a chip wafer (60) to be a plurality of substrates (10) is prepared, and in the element portion forming step and the through hole forming step, A step of forming a current path by forming a plurality of portions to be angle detection sensors provided with a plurality of magnetoresistive element portions (22) on the chip wafer (60) and forming through holes (15) in the portions to be the respective angle detection sensors. Then, a current supply line (40) is formed in each through hole (15) of the chip wafer (60), and in the magnetization process, one current supply line (40) is adjacent to the adjacent current supply line (40). In order to prevent the magnetic field to be generated and the magnetic field generated by the other current supply line (40) from being in the opposite directions, the directions of the currents flowing in the adjacent current supply lines (40) are opposite to each other. It is characterized in Ukoto. .

  In the current path forming step, the current supply line (40) can be formed by passing the wire (41) through the through hole (15) of the substrate (10).

  In the current path forming step, the current supply line (40) can be formed by passing the metal rod (42) through the through hole (15) of the substrate (10).

  In the invention according to claim 4, in the through hole forming step, after forming the through hole (15), an insulating film is formed to form a sidewall oxide film (16) on the surface of the through hole (15) of the substrate (10). It includes a process.

  According to this, even if the current supply line (40) contacts the sidewall oxide film (16), it does not directly contact the substrate (10), so that the current supply line (40) and the substrate (10) become conductive. Can be prevented.

  In addition, the code | symbol in the bracket | parenthesis of each means described in this column and the claim shows the correspondence with the specific means as described in embodiment mentioned later.

(A) is a top view of the angle detection sensor which concerns on 1st Embodiment of this invention, (b) is A-A 'sectional drawing of (a). It is sectional drawing of the magnetoresistive element part shown by FIG. It is the figure which showed the manufacturing process of the angle detection sensor shown by FIG. 1 and FIG. It is the figure which showed the manufacturing process following FIG. It is the figure which showed the manufacturing process following FIG. 4, and was the figure which showed the electric current path | route formation process especially. It is the figure which showed the manufacturing process following FIG. 5, and is the figure which showed the magnetization process especially. It is the figure which showed a part of manufacturing process of the angle detection sensor which concerns on 2nd Embodiment of this invention. It is the figure which showed a part of manufacturing process of the angle detection sensor which concerns on 3rd Embodiment of this invention. It is the figure which showed the manufacturing process following FIG. 8, and is the figure which showed the magnetization process especially.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings. In the following embodiments, the same or equivalent parts are denoted by the same reference numerals in the drawings.

(First embodiment)
Hereinafter, a first embodiment of the present invention will be described with reference to the drawings. The angle detection sensor according to the present embodiment is used, for example, for detecting the number of rotations of an engine for a car or detecting the rotation angle of a steering wheel.

  FIG. 1A is a plan view of the angle detection sensor according to the present embodiment, and FIG. 1B is a cross-sectional view taken along line A-A ′ of FIG. As shown in FIGS. 1A and 1B, the angle detection sensor includes two sensor units 20 on a substrate 10. The sensor unit 20 is an element whose resistance value changes when affected by an external magnetic field. The sensor unit 20 according to the present embodiment is configured as a tunnel magnetoresistive element (TMR element).

  As shown in FIG. 1B, the substrate 10 includes a semiconductor substrate 11 formed of Si or the like and an insulating film 12 formed on the semiconductor substrate 11.

  The substrate 10 has a surface 13 and another surface 14 opposite to the surface 13. Since the substrate 10 is composed of the semiconductor substrate 11 and the insulating film 12 as described above, the surface of the insulating film 12 corresponds to one surface 13 of the substrate 10 and the surface of the semiconductor substrate 11 on which the insulating film 12 is formed. The surface on the opposite side corresponds to the other surface 14 of the substrate 10.

  Further, the substrate 10 has a through hole 15 that penetrates from one surface 13 to the other surface 14. The through hole 15 is a hole used in a magnetizing process for each sensor unit 20 described later.

  A plurality of sensor units 20 are formed on the insulating film 12. As shown in FIG. 1A, in the present embodiment, four sensor units 20 are arranged around the through hole 15. The positive sensor parts 20 are arranged at equal intervals on a concentric circle with the through hole 15 as the center.

  The sensor unit 20 includes a lower electrode 21 provided on the insulating film 12, a magnetoresistive element unit 22 provided on the lower electrode 21, and an upper electrode 23 provided on the magnetoresistive element unit 22. It is equipped with.

  FIG. 2 is a cross-sectional view of the magnetoresistive element portion 22. As shown in this figure, the magnetoresistive element portion 22 is configured by forming a pin magnetic layer 22a, a tunnel layer 22b, and a free magnetic layer 22c on the lower electrode 21 in this order to constitute a TMR element.

  The pinned magnetic layer 22a is a ferromagnetic metal layer that is located closer to the insulating film 12 than the free magnetic layer 22c and has a fixed magnetization direction. The tunnel layer 22b is an insulating layer for allowing a current to flow from the free magnetic layer 22c to the pinned magnetic layer 22a by the tunnel effect. The free magnetic layer 22c is a ferromagnetic metal layer whose magnetization direction changes under the influence of an external magnetic field.

  The magnetoresistive element portion 22 having such a configuration is located above the one surface 13 of the substrate 10. In the plane direction parallel to the one surface 13 of the substrate 10, the magnetization directions of the pin magnetic layers 22 a of the magnetoresistive element portions 22 are different from each other.

  Specifically, as shown in the direction of the arrow of the sensor unit 20 in FIG. 1A, the magnetization direction of the pin magnetic layer 22 a of each magnetoresistive element unit 22 is a concentric circle centering on the through hole 15. Each is directed tangentially. For this reason, the resistance value of one magnetoresistive element unit 22 is output as, for example, a cosine curve according to the rotation angle, and the resistance value of the other magnetoresistive element unit 22 is output as, for example, a sin curve, according to the rotation angle. Become.

  The sensor unit 20 is laid out in a circular shape as shown in FIG. The reason why the planar layout of the sensor unit 20 is thus circular is that the magnetization characteristics are improved. An ellipse may be used instead of a perfect circle. Of course, the planar layout of the sensor unit 20 is not limited to a circle or an ellipse, but may be a polygon.

In addition, an insulating film 30 is formed on one surface 13 of the substrate 10 outside the stacked structure of the sensor unit 20 so as to be in contact with the side surface of the stacked structure. As the insulating film 30 and the insulating film 12, an insulating material such as a thermal oxide film having a high dielectric constant, a CVD oxide film, a CVD nitride film, or a TEOS oxide film is used. As a specific example, the insulating films 12 and 30 are made of SiO ₂ or SiN.

  The lower electrode 21 is connected to a lower electrode pad (not shown) formed on the insulating film 12 via a lower electrode wiring (not shown) connected to the lower electrode 21. The lower electrode wiring is formed so as to penetrate the insulating film 30. The lower electrode pad is connected to a signal processing chip (not shown).

  The upper electrode 23 is connected to an upper electrode pad (not shown) formed on the insulating film 12 via an upper electrode wiring (not shown) connected to the upper electrode 23. The upper electrode wiring is formed on the insulating film 30. The upper electrode pad is connected to a signal processing chip (not shown).

  The above is the overall configuration of the angle detection sensor according to the present embodiment. Next, a method for manufacturing the angle detection sensor having the above configuration will be described with reference to FIGS. In addition, each figure of FIG.3, FIG.4 and FIG.6 (a) is a figure corresponded in the AA cross section of Fig.1 (a), and FIG.5 and FIG.6 (b) is a perspective view.

  First, in the process shown in FIG. 3A, an insulating film 12 having a thickness of, for example, several μm is formed on the semiconductor substrate 11 by thermal oxidation, CVD, or the like. In this way, the substrate 10 is prepared.

  In the step shown in FIG. 3B, a metal layer to be the lower electrode 21 is formed on one surface 13 of the substrate 10 (insulating film 12) by sputtering or the like. Then, the lower electrode 21 is formed by etching with wet or the like. Note that the metal layer is patterned so that a part of the lower electrode wiring remains on the metal layer to be the lower electrode 21.

  In the step shown in FIG. 3C, each layer to be the magnetoresistive element portion 22 is sequentially formed on the lower electrode 21 by sputtering or the like. Then, a pair of magnetoresistive element portions 22 are formed on each lower electrode 21 by etching with wet or the like (element portion forming step).

  4A, the insulating film 30 is formed on the insulating film 12 by a lift-off method. As a result, the insulating film 30 covers the outer electrode side surfaces of the lower electrode 21 and the magnetoresistive element portion 22. A hole (not shown) connected to a part of the lower electrode wiring is formed in the insulating film 30.

  In the step shown in FIG. 4B, a metal material is buried in a hole (not shown) formed in the insulating film 30, and a metal layer to be the upper electrode 23 is formed on each magnetoresistive element 22 by sputtering or the like. Film. Further, the metal layer is etched by wet or the like. Accordingly, the upper electrode 23, the lower electrode wiring connected to the lower electrode 21, the upper electrode wiring connected to the upper electrode 23, the lower electrode pad and the upper electrode connected to these wirings, respectively. A pad is formed. Thus, the four sensor units 20 are formed on the substrate 10.

  In the step shown in FIG. 4C, the through hole 15 is formed in the substrate 10 (through hole forming step). For this reason, the through hole 15 penetrating the substrate 10 is formed by etching the semiconductor substrate 11 and the insulating film 12 constituting the substrate 10 by dry or wet. In the present embodiment, the through hole 15 is formed at the center position of the one surface 13 of the substrate 10.

  Thereafter, in the process shown in FIG. 5, a linear current supply line 40 through which a current flows from one of the one surface 13 side and the other surface 14 side of the substrate 10 to the other through the through hole 15 is formed. Route formation step). In the present embodiment, the current supply line 40 is formed by passing the metal wire 41 through the through hole 15 of the substrate 10. Here, it is desirable to pass the wire 41 through the through hole 15 so as to be arranged perpendicular to the one surface 13 of the substrate 10.

  Since the semiconductor substrate 11 is a conductive material, the wire 41 is fixed so that the semiconductor substrate 11 and the wire 41 do not come into contact with each other. The wire 41 is fixed by being hooked on an insulating hook member or by wire bonding to another substrate or the like.

  In the step shown in FIG. 6, the pinned magnetic layer 22a of each sensor unit 20 is magnetized (magnetization step). Specifically, as shown in FIG. 6A, the substrate 10 having the wire 41 passed through the through hole 15 is disposed in the thermostat 50 and the thermostat 50 is heated to around 300 ° C. The current I is passed through the wire 41 which is 40. In the present embodiment, a current is passed from the other surface 14 side of the substrate 10 to the one surface 13 side. Thereby, as shown in FIG. 6B, a concentric magnetic field H centering on the current supply line 40 can be generated around the current supply line 40 in accordance with Ampere's law. The “concentric circle” refers to a circle whose radial direction is a direction perpendicular to the longitudinal direction of the wire 41.

  As described above, the entire substrate 10 is heated and annealed in the magnetic field, so that the magnetization directions of the pinned magnetic layers 22a constituting the magnetoresistive element portions 22 are directed to the tangential directions of the concentric magnetic fields H, respectively. Magnetization can be performed.

  Then, the angle which magnetized each pin magnetic layer 22a of the four sensor parts 20 formed in one board | substrate 10 by taking out the board | substrate 10 from the thermostat 50, and pulling out the wire 41 from the through-hole 15 in a different direction, respectively. The detection sensor is completed. That is, the output of some of the magnetoresistive element portions 22 has a resistance value of a cos curve, and the output of some of the other magnetoresistive element portions 22 has a resistance value of a sin curve.

  Next, a method for detecting a rotation angle as a physical quantity when the angle detection sensor is affected by an external magnetic field will be described. In order to detect the rotation angle, a current is passed through the magnetoresistive element portion 22 via the lower electrode pad and the upper electrode pad.

  For example, when a magnet (not shown) is arranged above the magnetic sensor device and this magnet rotates by a handle operation, the magnetic field received by the free magnetic layer 22c from the magnet changes. That is, since each magnetoresistive element unit 22 is affected by an external magnetic field, the magnitude of the current flowing through each magnetoresistive element unit 22 based on the change in the resistance value of each magnetoresistive element unit 22, that is, the resistance value is Change.

  Here, the resistance value of the cosine curve output from one magnetoresistive element unit 22 and the resistance value of the sine curve output from the other magnetoresistive element unit 22 are respectively taken out to an external arithmetic chip. arcTan operation is performed. As a result, an output that changes with a constant inclination from −180 ° to + 180 °, that is, according to the rotation angle of 360 ° is obtained. Therefore, the rotation angle of the magnet corresponding to the magnitude of the output can be obtained.

  As described above, in this embodiment, in order to magnetize the magnetization directions of the pin magnetic layers 22a of the sensor units 20 in different directions, the through holes 15 are provided in the substrate 10, and the wires 41 are provided in the through holes 15. It is characterized in that each pin magnetic layer 22a is magnetized by a magnetic field H generated around the wire 41 by passing a current through the wire 41.

  That is, since the concentric magnetic field H centering on the current supply line 40 can be formed around the through-hole 15, the direction of the magnetic field H can be varied depending on the location on the one surface 13 of the substrate 10. it can. Therefore, even if the plurality of magnetoresistive element portions 22 are formed above the one surface 13 of the substrate 10, the magnetization directions of the pin magnetic layers 22a of the magnetoresistive element portions 22 are different from each other in one magnetization process. Can be magnetized.

(Second Embodiment)
In the present embodiment, parts different from the first embodiment will be described. In the first embodiment, one angle detection sensor is manufactured on one substrate 10. However, a plurality of portions serving as angle detection sensors can be formed on the chip wafer and magnetized together.

  FIG. 7 is a diagram showing a magnetization process according to the present embodiment. As shown in this figure, a plurality of portions serving as angle detection sensors are formed on the chip wafer 60, and the through holes 15 are formed in the respective angle detection sensors as described above.

  In the present embodiment, the current supply line 40 is formed in each through-hole 15 by passing the metal rod 42 through each through-hole 15 of the chip wafer 60 in the current path forming step shown in FIG. The metal bar 42 is inserted into each through hole 15 formed in the chip wafer 60, and is configured as a sword mountain, for example.

  Further, in the present embodiment, the current direction of the adjacent current supply lines 40 is set so that the magnetic field H generated by one current supply line 40 and the magnetic field H generated by the other current supply line 40 are not reversed. They are set in opposite directions. As a result, the pinned magnetic layer 22 a that is magnetized by the magnetic field H generated from the current supply line 40 on one side is not affected by the reverse magnetic field H generated from the other current supply line 40.

  As described above, the angle detection sensors can be formed collectively on the chip wafer 60 and can be magnetized together. In the above description, the metal rod 42 is used. However, the wire 41 may be used as in the first embodiment.

(Third embodiment)
In the present embodiment, parts different from the first and second embodiments will be described. In the first and second embodiments, the wire 41 or the metal rod 42 is passed through the through hole 15. However, in this embodiment, an electrode is embedded in the through hole 15 and wire bonding is performed on the electrode to form the current supply line 40. It is a feature. This manufacturing process will be described with reference to FIGS. 8 and 9, the left column shows a cross-sectional view, and the right column shows a perspective view.

  FIG. 8 is a diagram illustrating a part of the manufacturing process of the angle detection sensor according to the present embodiment, and is a diagram illustrating a manufacturing process subsequent to the above-described FIG. 4C. Therefore, first, the process shown in FIG. 3A to the process shown in FIG.

  After the step shown in FIG. 4C, in the step shown in FIG. 8A, a sidewall oxide film 16 is formed on the surface of the through hole 15 of the substrate 10 by, for example, a thermal oxidation method (insulating film formation). Process).

  Next, in the step shown in FIG. 8B, the through hole 15 is filled with the through electrode 17 by forming the through electrode 17 on the sidewall oxide film 16 by vapor deposition, sputtering, plating, or the like (electrode forming step). . As a result, the through electrode 17 is exposed on the one surface 13 side and the other surface 14 side of the substrate 10.

  Thereafter, in the step shown in FIG. 8C, wire bonding is performed on the through electrode 17 exposed from the substrate 10 (wire bonding step). Specifically, the first wire 43 is bonded to the surface of the through electrode 17 on the one surface 13 side of the substrate 10, and the second wire 44 is bonded to the surface of the through electrode 17 on the other surface 14 side of the substrate 10. Thereby, the current supply line 40 constituted by the first wire 43, the through electrode 17, and the second wire 44 is formed.

  The first wire 43 and the second wire 44 are fixed to other members in the same manner as in the first embodiment, and are arranged so as to extend perpendicular to the one surface 13 of the substrate 10.

  Subsequently, in the step shown in FIG. 9, the substrate 10 on which the current supply line 40 constituted by the first wire 43, the through electrode 17, and the second wire 44 is formed as in the step shown in FIG. 6. It arrange | positions and heats, and the electric current I is sent through the wire 41 which is the electric current supply line 40. FIG. As a result, a concentric magnetic field H around the current supply line 40 is generated around the current supply line 40 to magnetize each pin magnetic layer 22a.

  Thereafter, the substrate 10 is taken out from the thermostatic chamber 50, and the first wire 43 and the second wire 44 are removed from the through electrode 17. Thus, angle detection sensors are completed in which the pin magnetic layers 22a of the four sensor units 20 formed on one substrate 10 are magnetized in different directions. The through electrode 17 is left on the substrate 10.

  As described above, the through-electrode 17 is provided on the substrate 10, the first wire 43 and the second wire 44 are joined to the through-electrode 17, and the current formed by the first wire 43, the second wire 44, and the through-electrode 17. The magnetic field H can also be generated by passing a current I through the supply line 40.

  Here, the first wire 43 is provided only on the one surface 13 side of the substrate 10 on which the sensor unit 20 is provided, and another substrate on which a pad is provided instead of the second wire 44 is disposed on the other surface 14 side of the substrate 10. It is also conceivable that the other surface 14 side of the substrate 10 of the through electrode 17 is disposed on this pad. That is, it can be considered that the substrate 10 is placed on another substrate and only the first wire 43 is bonded to the through electrode 17. However, the magnetic field generated by the current I flowing through the current supply line 40 may interfere with another substrate and affect the one surface 13 side of the substrate 10. Therefore, as described above, it is preferable to generate a stable magnetic field by positioning the current supply line 40 on both the one surface 13 side and the other surface 14 side of the substrate 10.

(Other embodiments)
The configuration of the angle detection sensor shown in each of the above embodiments is an example, and is not limited to the configuration shown above, and may be another configuration that can realize the present invention. For example, in each of the above embodiments, the angle detection sensor has been described as being applied to a vehicle, but of course, it is not limited to the vehicle and can be widely used as a device that detects a rotation angle.

  In each of the above embodiments, the magnetoresistive element portion 22 is configured as a TMR element, but may be configured as a GMR element.

  In each of the above embodiments, four sensor units 20 are provided in one angle detection sensor, but this is an example, and the number of sensor units 20 can be set as appropriate. The configuration of the substrate 10 is also an example, and a configuration other than the semiconductor substrate 11 and the insulating film 12 may be used.

  In each of the above embodiments, the insulating film 30 is positioned outside the sensor unit 20 on the one surface 13 of the substrate 10. However, this is an example of the structure, and the insulating film 30 is the sensor unit 20 on the one surface 13 of the substrate 10. It may also be formed on the inner side.

  In the first embodiment, the wire 41 is used as the current supply line 40, but the metal rod 42 shown in the second embodiment may be used.

  In the first embodiment, the through hole 15 is formed in the substrate 10, and the wire 41 is directly passed through the through hole 15. However, the sidewall oxide film 16 shown in the third embodiment is formed on the surface of the through hole 15. You may do it. The same applies to the case where the metal rod 42 shown in the second embodiment is passed through the through hole 15. Thereby, insulation with the board | substrate 10 and the wire 41 or the metal stick | rod 42 can be aimed at.

DESCRIPTION OF SYMBOLS 10 Board | substrate 13 One side 14 Other side 15 Through-hole 16 Side wall oxide film 17 Through-electrode 22 Magnetoresistive element part 22a Pin magnetic layer 22c Free magnetic layer 40 Current supply line 41 Wire 42 Metal rod 43 First wire 44 Second wire

Claims (4)

A substrate (10) having one side (13) and the other side (14) opposite the one side (13);
One surface (13) of the substrate (10) having a free magnetic layer (22c) whose magnetization direction changes under the influence of an external magnetic field and a pin magnetic layer (22a) whose magnetization direction is fixed. And a plurality of magnetoresistive element portions (22) formed above,
The plurality of magnetoresistive element portions (22) include those having different magnetization directions of the pin magnetic layer (22a) in a plane direction parallel to one surface (13) of the substrate (10),
In the manufacturing method of the angle detection sensor which detects a physical quantity based on the change of the resistance value of the said several magnetoresistive element part (22) when the said several magnetoresistive element part (22) receives the influence of an external magnetic field. There,
Preparing the substrate (10);
An element part forming step of forming the plurality of magnetoresistive element parts (22) above one surface (13) of the substrate (10);
A through hole forming step of forming a through hole (15) penetrating from the one surface (13) to the other surface (14) in the substrate (10);
A linear current supply line (40) through which a current flows is formed from one of the one surface (13) side and the other surface (14) side of the substrate (10) to the other through the through hole (15). A current path forming step;
By causing a current to flow through the current supply line (40), a concentric magnetic field around the current supply line (40) is generated around the current supply line (40), and the entire substrate (10) is formed. By performing annealing in a magnetic field by heating, the magnetization of the pinned magnetic layer (22a) constituting the plurality of magnetoresistive element portions (22) is magnetized so as to be directed to the tangential direction of the concentric magnetic field, respectively. A magnetizing step for performing
The includes,
In the step of preparing the substrate (10), a plurality of chip wafers (60) to be the substrate (10) are prepared,
In the element portion forming step and the through-hole forming step, a plurality of portions serving as angle detection sensors including the plurality of magnetoresistive element portions (22) are formed on the chip wafer (60), and the respective angle detection sensors are formed. Forming the through hole (15) in a portion;
In the current path forming step, a current supply line (40) is formed in each through hole (15) of the chip wafer (60),
In the magnetization step, in the adjacent current supply lines (40), the magnetic field generated by one current supply line (40) and the magnetic field generated by the other current supply line (40) are not reversed. A method for manufacturing an angle detection sensor , wherein the magnetization is performed with the directions of currents flowing in adjacent current supply lines (40) being opposite to each other .   The angle detection according to claim 1, wherein in the current path forming step, the current supply line (40) is formed by passing a wire (41) through a through hole (15) of the substrate (10). Sensor manufacturing method.   The angle according to claim 1, wherein in the current path forming step, the current supply line (40) is formed by passing a metal rod (42) through the through hole (15) of the substrate (10). Manufacturing method of detection sensor.   The through hole forming step includes an insulating film forming step of forming a sidewall oxide film (16) on the surface of the through hole (15) of the substrate (10) after forming the through hole (15). The method for manufacturing an angle detection sensor according to claim 2 or 3, wherein:

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