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JP5786202B2 - Semiconductor module and manufacturing method thereof - Google Patents
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JP5786202B2 - Semiconductor module and manufacturing method thereof - Google Patents

Semiconductor module and manufacturing method thereof Download PDF

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JP5786202B2
JP5786202B2 JP2011082566A JP2011082566A JP5786202B2 JP 5786202 B2 JP5786202 B2 JP 5786202B2 JP 2011082566 A JP2011082566 A JP 2011082566A JP 2011082566 A JP2011082566 A JP 2011082566A JP 5786202 B2 JP5786202 B2 JP 5786202B2
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substrate
semiconductor element
emitting element
light emitting
mounting region
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JP2012221974A (en
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大久保 努
努 大久保
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Stanley Electric Co Ltd
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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/071Connecting or disconnecting
    • H10W72/073Connecting or disconnecting of die-attach connectors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/071Connecting or disconnecting
    • H10W72/075Connecting or disconnecting of bond wires
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/851Dispositions of multiple connectors or interconnections
    • H10W72/874On different surfaces
    • H10W72/884Die-attach connectors and bond wires
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/734Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked insulating package substrate, interposer or RDL
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/754Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked insulating package substrate, interposer or RDL

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  • Led Device Packages (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)

Description

本発明は半導体モジュールたとえば光半導体モジュールとしての発光ダイオード(LED)モジュール及びその製造方法に関する。   The present invention relates to a light emitting diode (LED) module as a semiconductor module, for example, an optical semiconductor module, and a manufacturing method thereof.

従来の光半導体モジュールの製造方法を図7、図8、図9、図10を参照して説明する。   A conventional method for manufacturing an optical semiconductor module will be described with reference to FIGS. 7, 8, 9, and 10.

始めに、図7の(A)の基板、リード端子及びキャビティ壁部組立工程を参照すると、エポキシ樹脂等よりなる基板1の上面、下面及び側面にたとえば銅等よりなるリード端子2−1、2−2を電解めっき法あるいは無電解めっき法により形成する。次いで、基板1の上面周囲に枠状のキャビティ壁部3を接着剤(図示せず)等を用いて装着する。   First, referring to the substrate, lead terminal and cavity wall assembly process of FIG. 7A, lead terminals 2-1 and 2 made of, for example, copper or the like are formed on the upper, lower and side surfaces of the substrate 1 made of epoxy resin or the like. -2 is formed by electrolytic plating or electroless plating. Next, a frame-like cavity wall 3 is mounted around the upper surface of the substrate 1 using an adhesive (not shown) or the like.

次に、図7の(B)の発光素子本固定工程を参照すると、組立てられた基板1の上面の発光素子5が固定される位置にエポキシあるいはシリコーンを主成分とする接着剤6を塗布する。次いで、発光素子5をコレット7を用いて基板1の接着剤6の位置に本固定する。尚、図7の(B)の発光素子本固定工程において、基板1の真空ステージ4への吸引固定の代わりに、他の押え手段を用いてもよい。また、接着剤6の代わりに、金、銀等の半田を用いることもできる。   Next, referring to the light emitting element main fixing step in FIG. 7B, an adhesive 6 mainly composed of epoxy or silicone is applied to a position where the light emitting element 5 on the upper surface of the assembled substrate 1 is fixed. . Next, the light emitting element 5 is permanently fixed to the position of the adhesive 6 on the substrate 1 using the collet 7. In the light emitting element main fixing step of FIG. 7B, other pressing means may be used instead of suction fixing the substrate 1 to the vacuum stage 4. Further, instead of the adhesive 6, solder such as gold or silver can be used.

次に、図8の(A)の接着剤硬化工程を参照すると、発光素子5が本固定された基板1を加熱炉(図示せず)に移し、加熱して接着剤6を硬化させる。このとき、接着剤6から有機ガスが蒸発して基板1、リード端子2−1,2−2、発光素子5特にそのパッド(導電部)等の上に汚染物層6aが付着する。接着剤6の代わりに、半田を用いた場合にも、フラックスによる汚染物層が同様に付着する。   Next, referring to the adhesive curing step of FIG. 8A, the substrate 1 on which the light emitting element 5 is permanently fixed is transferred to a heating furnace (not shown) and heated to cure the adhesive 6. At this time, the organic gas is evaporated from the adhesive 6, and the contaminant layer 6 a adheres to the substrate 1, the lead terminals 2-1 and 2-2, the light emitting element 5, particularly the pad (conductive part). In the case where solder is used instead of the adhesive 6, a contaminant layer due to the flux adheres similarly.

次に、図8の(B)の表面洗浄工程を参照すると、後述のワイヤボンディング工程に先立ち、基板1、リード端子2−1、2−2、発光素子5等の上に付着した汚染物層6aを除去する表面洗浄たとえばプラズマクリーニングを行い、後述のボンディングワイヤの接合強度の低下あるいは不接合を防止する。すなわち、図8の(A)に示す光半導体モジュールをプラズマエッチング装置の真空チャンバ801内のホルダ802に搬入し、真空ポンプ803による真空排気後、プラズマ発生ガスたとえばアルゴンガスを供給すると共に、高周波電源804をオンする。尚、805は接地電極である。この結果、アルゴンプラズマにより汚染物層6aを除去できる。プラズマクリーニング工程については特許文献1を参照されたし。尚、プラズマクリーニングの代わりに、紫外線クリーニングを行うこともある。   Next, referring to the surface cleaning step in FIG. 8B, a contaminant layer adhered on the substrate 1, the lead terminals 2-1, 2-2, the light emitting element 5 and the like prior to the wire bonding step described later. Surface cleaning for removing 6a, for example, plasma cleaning, is performed to prevent a decrease in bonding strength or non-bonding of a bonding wire described later. That is, the optical semiconductor module shown in FIG. 8A is carried into a holder 802 in a vacuum chamber 801 of a plasma etching apparatus, and after evacuation by a vacuum pump 803, a plasma generating gas such as argon gas is supplied and a high frequency power source is supplied. Turn on 804. Reference numeral 805 denotes a ground electrode. As a result, the contaminant layer 6a can be removed by argon plasma. For the plasma cleaning process, see Patent Document 1. Note that ultraviolet cleaning may be performed instead of plasma cleaning.

次に、図9の(A)のワイヤボンディング工程を参照すると、発光素子5のパッドたとえばp側パッド5a及びn側パッド5bをボンディングワイヤ(給電ワイヤ)8−1,8−2によってリード端子2−1、2−2に接合する。このとき、表面洗浄工程において、基板1、発光素子5のp側パッド5a及びn側パッド5b、リード端子2−1,2−2の表面から汚染物層6aは既に除去されているので、ボンディングワイヤ8−1,8−2は良好に接合される。   Next, referring to the wire bonding step of FIG. 9A, pads of the light emitting element 5, such as the p-side pad 5a and the n-side pad 5b, are connected to the lead terminal 2 by bonding wires (feeding wires) 8-1 and 8-2. Bonded to −1 and 2-2. At this time, in the surface cleaning process, the contaminant layer 6a has already been removed from the surfaces of the substrate 1, the p-side pad 5a and the n-side pad 5b of the light emitting element 5, and the lead terminals 2-1 and 2-2. The wires 8-1 and 8-2 are bonded well.

次に、図9の(B)の樹脂封止工程を参照すると、エポキシ樹脂等を注入後硬化させて樹脂層9で封止する。尚、白色光を発光させる必要があるときには、樹脂層9にイットリウム・アルミニウム・ガーネット(YAG)系酸化物等の蛍光体を含有させることもできる。   Next, referring to the resin sealing step in FIG. 9B, epoxy resin or the like is injected and cured, and the resin layer 9 is sealed. When it is necessary to emit white light, the resin layer 9 may contain a phosphor such as yttrium, aluminum, garnet (YAG) oxide.

最後に、図10を参照すると、光半導体モジュール30が完成する。光半導体モジュール30においては、発光素子5の底面は接着剤6を介して基板1に接触している。   Finally, referring to FIG. 10, the optical semiconductor module 30 is completed. In the optical semiconductor module 30, the bottom surface of the light emitting element 5 is in contact with the substrate 1 through the adhesive 6.

特開平11−307819号公報JP-A-11-307819

しかしながら、上述の従来の光半導体モジュールの製造方法においては、発光素子本固定工程において接着剤6あるいは半田を用い、また、接着剤あるいは半田硬化工程において、汚染物層6aが付着されるので、表面洗浄工程を必要とし、この結果、製造コストの上昇を招くという課題がある。また、表面洗浄工程により基板1やキャビティ壁部3を始めとした各構成部材の変色あるいは劣化を招くという課題がある。さらに、汚染物層6aを除去するまでの強い洗浄を行えない場合もある。特に、プラズマクリーニングを用いた場合、発光素子5の致命的な破壊を招く場合がある。   However, in the above-described conventional method of manufacturing an optical semiconductor module, the adhesive 6 or solder is used in the light emitting element main fixing step, and the contaminant layer 6a is attached in the adhesive or solder curing step. There is a problem that a cleaning process is required, resulting in an increase in manufacturing cost. Further, there is a problem that the surface cleaning process causes discoloration or deterioration of each component including the substrate 1 and the cavity wall 3. Furthermore, strong cleaning may not be performed until the contaminant layer 6a is removed. In particular, when plasma cleaning is used, the light emitting element 5 may be fatally destroyed.

上述の課題を解決するために、本発明に係る光半導体モジュールの製造方法は、半導体素子搭載領域及びこの半導体素子搭載領域の外側の周囲領域を含む所定領域全体に亘って複数の通気孔を有する基板を準備する工程と、通気孔の裏面側より吸引して基板の半導体素子搭載領域に半導体素子を吸着して仮固定する半導体素子仮固定工程と、半導体素子を基板に仮固定した状態で、半導体素子と基板上に設けられた導電部との間に給電ワイヤを接合するワイヤボンディング工程と、半導体素子を基板に仮固定した状態で、半導体素子及び給電ワイヤを被覆部材で封止すると共に、封止により半導体素子と基板を本固定する封止兼半導体素子本固定工程とを具備し、封止兼半導体素子本固定工程において、被覆部材が周囲領域の上面側開口がある通気孔の上方の一部に充填されるものである。 In order to solve the above-described problems, an optical semiconductor module manufacturing method according to the present invention has a plurality of vent holes over a predetermined area including a semiconductor element mounting area and a peripheral area outside the semiconductor element mounting area. In the state where the step of preparing the substrate, the semiconductor element temporary fixing step of sucking and temporarily fixing the semiconductor element to the semiconductor element mounting area of the substrate by sucking from the back side of the vent hole, and the semiconductor element temporarily fixed to the substrate, A wire bonding step of bonding a power supply wire between the semiconductor element and a conductive portion provided on the substrate, and in a state where the semiconductor element is temporarily fixed to the substrate, the semiconductor element and the power supply wire are sealed with a covering member, comprising a sealing and semiconductor device the present fixing step of the fixing of the semiconductor element and the substrate with a sealing, in the sealing and the semiconductor element present fixing step, the upper surface side opening there of the covering member surrounding region It is intended to be filled in a portion of the upper vent.

また、本発明に係る半導体モジュールは、半導体素子搭載領域及びこの半導体素子搭載領域の外側の周囲領域を含む所定領域全体に亘って形成された複数の通気孔を有する基板と、基板上に形成された導電部と、半導体素子搭載領域上に配置された半導体素子と、半導体素子と導電部とを接続する給電ワイヤと、半導体素子及び給電ワイヤを被覆する封止層とを具備し、半導体素子搭載領域において、基板と半導体素子の底面とが直接接触し、封止層は周囲領域の上面側開口がある通気孔の上方の一部に充填しているものである。
A semiconductor module according to the present invention is formed on a substrate having a plurality of vent holes formed over a predetermined region including a semiconductor element mounting region and a peripheral region outside the semiconductor element mounting region. A semiconductor element mounted on the semiconductor element mounting region; a semiconductor element disposed on the semiconductor element mounting region; a power supply wire connecting the semiconductor element and the conductive part; and a sealing layer covering the semiconductor element and the power supply wire. In the region, the substrate and the bottom surface of the semiconductor element are in direct contact with each other, and the sealing layer fills a part of the upper portion of the vent hole having the opening on the upper surface side of the surrounding region.

本発明によれば、従来の接着層あるいは半田の硬化工程及びそれによる汚染物層の表面洗浄工程がないので、製造コストを低減できると共に、各構成部材の変色や劣化及び発光素子の破壊もなくなる。   According to the present invention, since there is no conventional adhesive layer or solder curing step and contamination surface cleaning step, the manufacturing cost can be reduced, and the discoloration and deterioration of each component and the destruction of the light emitting element are eliminated. .

本発明に係る光半導体モジュールの製造方法の第1の実施の形態を説明するための断面図である。It is sectional drawing for demonstrating 1st Embodiment of the manufacturing method of the optical semiconductor module which concerns on this invention. 本発明に係る光半導体モジュールの製造方法の第1の実施の形態を説明するための断面図である。It is sectional drawing for demonstrating 1st Embodiment of the manufacturing method of the optical semiconductor module which concerns on this invention. 図1、図2に示す光半導体モジュールの製造方法によって製造された光半導体モジュールを示し、(A)は平面図、(B)は(A)のB−B線断面図である。The optical semiconductor module manufactured by the manufacturing method of the optical semiconductor module shown in FIG. 1, FIG. 2 is shown, (A) is a top view, (B) is the BB sectional drawing of (A). 本発明に係る光半導体モジュールの製造方法の第2の実施の形態を説明するための断面図である。It is sectional drawing for demonstrating 2nd Embodiment of the manufacturing method of the optical semiconductor module which concerns on this invention. 本発明に係る光半導体モジュールの製造方法の第2の実施の形態を説明するための断面図である。It is sectional drawing for demonstrating 2nd Embodiment of the manufacturing method of the optical semiconductor module which concerns on this invention. 図4、図5に示す光半導体モジュールの製造方法によって製造された光半導体モジュールを示し、(A)は平面図、(B)は(A)のB−B線断面図である。The optical semiconductor module manufactured by the manufacturing method of the optical semiconductor module shown to FIG. 4, FIG. 5 is shown, (A) is a top view, (B) is the BB sectional drawing of (A). 従来の光半導体モジュールの製造方法を説明するための断面図である。It is sectional drawing for demonstrating the manufacturing method of the conventional optical semiconductor module. 従来の光半導体モジュールの製造方法を説明するための断面図である。It is sectional drawing for demonstrating the manufacturing method of the conventional optical semiconductor module. 従来の光半導体モジュールの製造方法を説明するための断面図である。It is sectional drawing for demonstrating the manufacturing method of the conventional optical semiconductor module. 図7、図8、図9に示す光半導体モジュールの製造方法によって製造された光半導体モジュールを示し、(A)は平面図、(B)は(A)のB−B線断面図である。The optical semiconductor module manufactured by the manufacturing method of the optical semiconductor module shown in FIG.7, FIG.8, FIG.9 is shown, (A) is a top view, (B) is the BB sectional drawing of (A).

本発明に係る光半導体モジュールの製造方法の第1の実施の形態を図1、図2、図3を参照して説明する。   A first embodiment of a method for manufacturing an optical semiconductor module according to the present invention will be described with reference to FIGS.

始めに、図1の(A)の基板、リード端子及びキャビティ壁部組立工程を参照すると、通気孔1’aを有する多孔質アルミナ等よりなる多孔質基板1’の上面、下面及び側面にたとえば銅等よりなるリード端子2−1、2−2を電解めっき法あるいは無電解めっき法により形成する。通気孔1’aは、多孔質基板1’の表面から裏面へ連続して形成された貫通孔である。次いで、多孔質基板1’の上面周囲に枠状のキャビティ壁部3を接着剤(図示せず)等を用いて装着する。本第1の実施の形態では、通気孔1’aが基板全体に亘り形成されている多孔質基板1’を用いたが、通気孔1’aは、少なくとも後述の発光素子5を搭載する予定の領域(以下、発光素子搭載領域)、すなわち少なくとも発光素子5直下に形成されていればよく、従って、通気孔が基板上に部分的に形成されているものを用いることができる。尚、後述の樹脂封止兼発光素子本固定工程において、樹脂が硬化前に発光素子下の通気孔1’aに流れ込んで発光素子5の吸引が阻害されないように、通気孔1’aのうち、発光素子搭載領域に上面側開口を有する通気孔と、発光素子搭載領域の外側に上面側開口を有する通気孔とは独立していることが好ましく、また、特に、少なくとも発光素子5直下の通気孔1’aは多孔質基板1’の上面に対して垂直となっていることが好ましい。   First, referring to the substrate, lead terminal, and cavity wall assembly process of FIG. 1A, the upper surface, the lower surface, and the side surface of the porous substrate 1 ′ made of porous alumina or the like having a vent hole 1′a, for example, Lead terminals 2-1 and 2-2 made of copper or the like are formed by an electrolytic plating method or an electroless plating method. The vent hole 1'a is a through hole formed continuously from the front surface to the back surface of the porous substrate 1 '. Next, a frame-like cavity wall 3 is mounted around the upper surface of the porous substrate 1 ′ using an adhesive (not shown) or the like. In the first embodiment, the porous substrate 1 ′ in which the vent hole 1 ′ a is formed over the entire substrate is used, but the vent hole 1 ′ a is scheduled to mount at least a light emitting element 5 described later. This region (hereinafter referred to as the light emitting element mounting region), that is, at least directly below the light emitting element 5, can be used, and therefore, an air hole partially formed on the substrate can be used. In addition, in the resin sealing and light emitting element main fixing step, which will be described later, in order to prevent the resin from flowing into the vent hole 1'a below the light emitting element before being cured and the suction of the light emitting element 5 is not inhibited, It is preferable that the vent hole having the upper surface side opening in the light emitting element mounting region and the vent hole having the upper surface side opening outside the light emitting element mounting region are independent, and in particular, at least the through hole directly below the light emitting element 5 is provided. The pores 1′a are preferably perpendicular to the upper surface of the porous substrate 1 ′.

次に、図1の(B)の発光素子仮固定工程を参照すると、組立てられた多孔質基板1’を真空ステージ4上に載置し、真空ポンプ(図示せず)によって多孔質基板1’の裏面から吸引して固定する。次いで、発光素子5をコレット7を用いて多孔質基板1’の上面に載置する。この結果、発光素子5は多孔質基板1’の通気孔1’aを介して吸引されて多孔質基板1’に吸着され、仮固定される。   Next, referring to the light emitting element temporary fixing step in FIG. 1B, the assembled porous substrate 1 ′ is placed on the vacuum stage 4, and the porous substrate 1 ′ is placed by a vacuum pump (not shown). Suction and fix from the back side. Next, the light emitting element 5 is placed on the upper surface of the porous substrate 1 ′ using the collet 7. As a result, the light emitting element 5 is sucked through the vent hole 1'a of the porous substrate 1 ', adsorbed to the porous substrate 1', and temporarily fixed.

次に、図2の(A)のワイヤボンディング工程を参照すると、発光素子5を多孔質基板1’に仮固定したままで、発光素子5のパッドたとえばp側パッド5a及びn側パッド5bをボンディングワイヤ8−1,8−2によってリード端子2−1、2−2に接合する。このとき、多孔質基板1’、発光素子5のp側パッド5a及びn側パッド5b、リード端子2−1,2−2の表面は汚染されていないので、ボンディングワイヤ8−1,8−2は良好に接合される。従って、従来の発光素子本固定工程で用いられた接着剤6もしくは半田は用いられていないので、接着剤6もしくは半田による発光素子5のp側パッド5a及びn側パッド5b、リード端子2−1,2−2の汚染はない。この結果、従来の接着剤もしくは半田の加熱硬化工程及び表面洗浄工程は不要となる。   Next, referring to the wire bonding step in FIG. 2A, the pads of the light emitting element 5, such as the p-side pad 5a and the n-side pad 5b, are bonded while the light emitting element 5 is temporarily fixed to the porous substrate 1 ′. The lead terminals 2-1 and 2-2 are joined by wires 8-1 and 8-2. At this time, the surfaces of the porous substrate 1 ′, the p-side pad 5 a and the n-side pad 5 b of the light emitting element 5, and the lead terminals 2-1 and 2-2 are not contaminated. Are well bonded. Therefore, since the adhesive 6 or solder used in the conventional light emitting element main fixing process is not used, the p-side pad 5a and the n-side pad 5b of the light-emitting element 5 by the adhesive 6 or solder, and the lead terminal 2-1. , 2-2 is not contaminated. As a result, the conventional heat curing step and surface cleaning step of the adhesive or solder become unnecessary.

次に、図2の(B)の樹脂封止兼発光素子本固定工程を参照すると、発光素子5を多孔質基板1’に仮固定したままで、シリコーン樹脂等を注入及び硬化して樹脂層9で封止する。このとき、樹脂層9を構成する樹脂は真空ステージ4中に設けられたヒータ(図示せず)によって加熱されて硬化する。また、樹脂封止中も吸引による仮固定は継続するので、樹脂層9を形成するために注入する樹脂は高粘度のものあるいはフィラ入りものとし、基板1’の裏面への浸透を抑止する。注入樹脂は、通気孔1’aの上部にも充填されるが、多孔質基板1’の裏面まで回り込まないように粘度調整されることが好ましい。この結果、発光素子5は樹脂層9によって多孔質基板1’に本固定される。注入樹脂は、発光素子搭載領域に上面側開口がある通気孔には充填されないが、発光素子搭載領域の外側に上面側開口のある通気孔の上方の一部に充填されるため、樹脂層9は、発光素子搭載領域の外側に上面側開口のある通気孔の上方の一部まで及ぶ。このように、発光素子搭載領域の外側に上面側開口を有する通気孔1’aが形成されている場合、通気孔1’aに樹脂が充填されることにより、樹脂層9と多孔質基板1’との接着強度、発光素子5の多孔質基板1’との接合強度を高めることができる。尚、白色光を発光させる必要があるときには、樹脂層9にイットリウム・アルミニウム・ガーネット(YAG)系酸化物等の蛍光体を含有させることもできる。   Next, referring to the resin sealing and light emitting element main fixing step in FIG. 2B, the resin layer is injected and cured while temporarily fixing the light emitting element 5 to the porous substrate 1 ′. Seal with 9. At this time, the resin constituting the resin layer 9 is heated and cured by a heater (not shown) provided in the vacuum stage 4. In addition, since temporary fixing by suction continues even during resin sealing, the resin to be injected to form the resin layer 9 is made of a high viscosity or a filler, thereby preventing permeation of the back surface of the substrate 1 '. The injected resin is also filled in the upper part of the vent hole 1'a, but the viscosity is preferably adjusted so as not to go around to the back surface of the porous substrate 1 '. As a result, the light emitting element 5 is permanently fixed to the porous substrate 1 ′ by the resin layer 9. The injected resin is not filled in the vent hole having the upper surface side opening in the light emitting element mounting region, but is filled in a part of the upper portion of the vent hole having the upper surface side opening outside the light emitting element mounting region. Extends to a part of the upper part of the vent hole having an opening on the upper surface side outside the light emitting element mounting region. Thus, when the vent hole 1′a having the upper surface side opening is formed outside the light emitting element mounting region, the resin layer 9 and the porous substrate 1 are filled by filling the vent hole 1′a with resin. The bonding strength between the light emitting element 5 and the bonding strength between the light emitting element 5 and the porous substrate 1 can be increased. When it is necessary to emit white light, the resin layer 9 can contain a phosphor such as yttrium / aluminum / garnet (YAG) oxide.

最後に、図3を参照すると、真空ポンプ(図示せず)による吸引動作を停止し、図2の(B)に示す光半導体モジュールを真空ステージ4から取り出すと、光半導体モジュール10が完成する。光半導体モジュール10においては、発光素子5は、多孔質基板1’に封止樹脂により固定され、発光素子5の底面は、従来のように接着剤や半田を介さずに、多孔質基板1’に直接に接触している。また、多孔質基板1’の通気孔1’aのうち、発光素子搭載領域の外側に存在する通気孔1’aの上部は樹脂層9の一部が充填されている。   Finally, referring to FIG. 3, when the suction operation by the vacuum pump (not shown) is stopped and the optical semiconductor module shown in FIG. 2B is taken out from the vacuum stage 4, the optical semiconductor module 10 is completed. In the optical semiconductor module 10, the light emitting element 5 is fixed to the porous substrate 1 ′ with a sealing resin, and the bottom surface of the light emitting element 5 is not formed with an adhesive or solder as in the prior art, and the porous substrate 1 ′. Is in direct contact. In addition, in the vent hole 1 ′ a of the porous substrate 1 ′, the upper part of the vent hole 1 ′ a existing outside the light emitting element mounting region is filled with a part of the resin layer 9.

このように、上述の第1の実施の形態によれば、発光素子5を多孔質基板1’に吸引による仮固定したまま、ボンディングワイヤ8−1,8−2を施し、発光素子5を多孔質基板1’に樹脂封止によって本固定しているので、従来方法における接着剤あるいは半田の硬化工程及びそれによる汚染物層の表面洗浄工程が不要となり、この結果、製造コストを低減できる。また、表面洗浄工程による各構成部材の変色や劣化及び発光素子5の破壊もない。   Thus, according to the first embodiment described above, the bonding wires 8-1 and 8-2 are applied while the light emitting element 5 is temporarily fixed to the porous substrate 1 ′ by suction, thereby making the light emitting element 5 porous. Since the main substrate 1 'is permanently fixed by resin sealing, the curing process of the adhesive or solder and the surface cleaning process of the contaminant layer by the conventional method are unnecessary, and as a result, the manufacturing cost can be reduced. In addition, there is no discoloration or deterioration of each constituent member due to the surface cleaning process, and there is no destruction of the light emitting element 5.

本発明に係る光半導体モジュールの製造方法の第2の実施の形態を図4、図5、図6を参照して説明する。   A second embodiment of the method for manufacturing an optical semiconductor module according to the present invention will be described with reference to FIGS.

始めに、図4の(A)の基板、リード端子及びキャビティ壁部組立工程を参照すると、円孔(開孔)1A−0を有する基板1Aの上面、下面及び側面にたとえば銅等よりなるリード端子2−1、2−2を電解めっき法あるいは無電解めっき法により形成する。次いで、基板1Aの上面周囲に枠状のキャビティ壁部3を接着剤(図示せず)等を用いて装着する。   First, referring to the substrate, lead terminal, and cavity wall assembly process of FIG. 4A, leads made of, for example, copper or the like on the upper surface, the lower surface, and the side surface of the substrate 1A having the circular holes (open holes) 1A-0. The terminals 2-1 and 2-2 are formed by electrolytic plating or electroless plating. Next, a frame-like cavity wall 3 is mounted around the upper surface of the substrate 1A using an adhesive (not shown) or the like.

次に、図4の(B)の発光素子仮固定工程を参照すると、組立てられた基板1Aを真空ステージ4上に載置し、通気孔1B−0を有する多孔質アルミナ等よりなる多孔質基板1Bを真空ポンプ(図示せず)によって多孔質基板1Bの裏面から吸引して仮固定する。この場合、多孔質基板1Bは基板1Aの円孔1A−0より大きい。次いで、発光素子5をコレット7を用いて多孔質基板1Bの上面に載置する。この結果、発光素子5は多孔質基板1Bの通気孔1B−0を介して吸引されて多孔質基板1Bに吸着され、仮固定される。尚、多孔質基板1Bは予め基板1Aに接着剤によって固定しておくこともできる。また、後述の樹脂封止兼発光素子本固定工程において、樹脂が硬化前に発光素子5下の通気孔1B−0に流れ込んで発光素子5の吸引が阻害されないように、通気孔1B−0のうち、発光素子搭載領域に上面側開口を有する通気孔と、発光素子搭載領域の外側に上面側開口を有する通気孔とは独立していることが好ましく、また、特に、少なくとも発光素子5直下の通気孔1B−0は多孔質基板1Bの上面に対して垂直となっていることが好ましい。   Next, referring to the light-emitting element temporary fixing step in FIG. 4B, the assembled substrate 1A is placed on the vacuum stage 4 and is made of porous alumina or the like having a vent hole 1B-0. 1B is sucked from the back surface of the porous substrate 1B by a vacuum pump (not shown) and temporarily fixed. In this case, the porous substrate 1B is larger than the circular hole 1A-0 of the substrate 1A. Next, the light emitting element 5 is placed on the upper surface of the porous substrate 1 </ b> B using the collet 7. As a result, the light emitting element 5 is sucked through the vent hole 1B-0 of the porous substrate 1B, adsorbed to the porous substrate 1B, and temporarily fixed. The porous substrate 1B can be fixed to the substrate 1A in advance with an adhesive. Further, in the resin sealing and light emitting element main fixing step, which will be described later, in order to prevent the resin from flowing into the vent hole 1B-0 below the light emitting element 5 before being cured and the suction of the light emitting element 5 is not hindered. Of these, the vent having the upper surface side opening in the light emitting element mounting region and the vent hole having the upper surface side opening outside the light emitting element mounting region are preferably independent, and in particular, at least directly below the light emitting element 5. The vent hole 1B-0 is preferably perpendicular to the upper surface of the porous substrate 1B.

次に、図5の(A)のワイヤボンディング工程を参照すると、発光素子5を多孔質基板1Bに仮固定したままで、発光素子5のパッドたとえばp側パッド5a及びn側パッド5bをボンディングワイヤ8−1,8−2によってリード端子2−1、2−2に接合する。このとき、多孔質基板1B、発光素子5のp側パッド5a及びn側パッド5b、リード端子2−1,2−2の表面は汚染されていないので、ボンディングワイヤ8−1,8−2は良好に接合される。従って、従来の発光素子本固定工程で用いられた接着剤6もしくは半田は用いられない。この結果、従来の接着剤もしくは半田の加熱硬化工程及び表面洗浄工程は不要となる。   Next, referring to the wire bonding step of FIG. 5A, the pads of the light-emitting element 5, such as the p-side pad 5a and the n-side pad 5b, are bonded to the porous substrate 1B while temporarily fixing the light-emitting element 5 to the porous substrate 1B. The lead terminals 2-1 and 2-2 are joined by 8-1, 8-2. At this time, since the surfaces of the porous substrate 1B, the p-side pad 5a and the n-side pad 5b of the light emitting element 5, and the lead terminals 2-1 and 2-2 are not contaminated, the bonding wires 8-1 and 8-2 are Bonded well. Therefore, the adhesive 6 or solder used in the conventional light emitting element main fixing process is not used. As a result, the conventional heat curing step and surface cleaning step of the adhesive or solder become unnecessary.

次に、図5の(B)の樹脂封止兼発光素子本固定工程を参照すると、発光素子5を多孔質基板1Bに仮固定したままで、シリコーン樹脂等を注入後硬化させて樹脂層9で封止する。このとき、樹脂層9は真空ステージ4中に設けられたヒータ(図示せず)によって加熱されて硬化する。また、樹脂封止中も吸引による仮固定は継続するので、樹脂層9は高粘度のものあるいはフィラ入りものとし、多孔質基板1Bの裏面への浸透を抑止する。注入樹脂は、通気孔1B−0の上部にも充填されるが、基板1Aの裏面まで回り込まないように粘度調整されることが好ましい。この結果、発光素子5は樹脂層9によって多孔質基板1Bに本固定される。注入樹脂は、発光素子搭載領域に上面側開口がある通気孔には充填されないが、発光素子搭載領域の外側に上面側開口のある通気孔の上方の一部に充填されるため、樹脂層9は、発光素子搭載領域の外側に上面側開口のある通気孔の上方の一部まで及ぶ。このように、発光素子搭載領域の外側に上面側開口を有する通気孔1B−0が形成されている場合、通気孔1B−0に樹脂が充填されることにより、樹脂層9と多孔質基板1Bとの接着強度、発光素子5の多孔質基板1Bとの接合強度を高めることができる。尚、この場合も、白色光を発光させる必要があるときには、樹脂層9にイットリウム・アルミニウム・ガーネット(YAG)系酸化物等の蛍光体を含有させることもできる。また、本第2の実施の形態においても、基板1A、多孔質基板1B、ボンディングワイヤ8−1、8−2、及び発光素子5を封止する被覆部材として樹脂を用いたが、本発明は、樹脂に限るものではなく、ガラスなどの他の透光性部材を用いることができる。   Next, referring to the resin sealing and light emitting element main fixing step in FIG. 5B, the resin layer 9 is cured by injecting a silicone resin and the like while temporarily fixing the light emitting element 5 to the porous substrate 1B. Seal with. At this time, the resin layer 9 is heated and cured by a heater (not shown) provided in the vacuum stage 4. In addition, since temporary fixing by suction continues even during resin sealing, the resin layer 9 is made of high viscosity or filled with filler to suppress permeation to the back surface of the porous substrate 1B. The injected resin is also filled in the upper part of the vent hole 1B-0, but the viscosity is preferably adjusted so as not to go around to the back surface of the substrate 1A. As a result, the light emitting element 5 is permanently fixed to the porous substrate 1 </ b> B by the resin layer 9. The injected resin is not filled in the vent hole having the upper surface side opening in the light emitting element mounting region, but is filled in a part of the upper portion of the vent hole having the upper surface side opening outside the light emitting element mounting region. Extends to a part of the upper part of the vent hole having an opening on the upper surface side outside the light emitting element mounting region. Thus, when the vent hole 1B-0 having the upper surface side opening is formed outside the light emitting element mounting region, the resin layer 9 and the porous substrate 1B are filled by filling the vent hole 1B-0 with resin. The bonding strength between the light-emitting element 5 and the porous substrate 1B can be increased. In this case as well, when it is necessary to emit white light, the resin layer 9 can contain a phosphor such as yttrium, aluminum, garnet (YAG) oxide. Also in the second embodiment, resin is used as a covering member for sealing the substrate 1A, the porous substrate 1B, the bonding wires 8-1, 8-2, and the light emitting element 5. It is not limited to resin, and other translucent members such as glass can be used.

最後に、図6を参照すると、真空ポンプ(図示せず)による吸引動作を停止し、図5の(B)に示す光半導体モジュールを真空ステージ4から取り出すと、光半導体モジュール20が完成する。光半導体モジュール20においては、発光素子5は多孔質基板1Bに封止樹脂により固定され、多孔質基板1Bは基板1Aに封止樹脂により固定されており、発光素子5の底面は、従来のように接着剤や半田を介さずに、多孔質基板1Bに直接に接触している。また、多孔質基板1Bの通気孔1B−0のうち、発光素子搭載領域の外側に存在する通気孔1B−0の上部は樹脂層9の一部が充填されている。   Finally, referring to FIG. 6, when the suction operation by the vacuum pump (not shown) is stopped and the optical semiconductor module shown in FIG. 5B is taken out from the vacuum stage 4, the optical semiconductor module 20 is completed. In the optical semiconductor module 20, the light emitting element 5 is fixed to the porous substrate 1B with a sealing resin, the porous substrate 1B is fixed to the substrate 1A with a sealing resin, and the bottom surface of the light emitting element 5 is the same as the conventional one. In addition, it is in direct contact with the porous substrate 1B without using an adhesive or solder. In addition, in the vent hole 1B-0 of the porous substrate 1B, a part of the resin layer 9 is filled in the upper part of the vent hole 1B-0 existing outside the light emitting element mounting region.

このように、上述の第2の実施の形態においても、発光素子5を多孔質基板1Bに吸引による仮固定したまま、ボンディングワイヤ8−1,8−2を施し、発光素子5を多孔質基板1Bに樹脂封止によって本固定しているので、従来方法における接着剤あるいは半田の硬化工程及びそれによる汚染物層の表面洗浄工程が不要となり、この結果、製造コストを低減できる。また、表面洗浄工程による発光素子5の変色及び劣化もない。さらに、基板1Aに円孔1A−0を設けるが、多孔質基板1Bを設けた分、大きい基板1Aは多孔質である必要はないので、リード端子2−1、2−2の形成が第1の実施の形態の多孔質基板1’上と比較して容易となる、等により、製造コストをさらに低減できる。   Thus, also in the above-described second embodiment, the bonding wires 8-1 and 8-2 are applied while temporarily fixing the light-emitting element 5 to the porous substrate 1B by suction, and the light-emitting element 5 is attached to the porous substrate. Since it is permanently fixed to 1B by resin sealing, the curing process of the adhesive or solder and the process of cleaning the surface of the contaminant layer by the conventional method are not required, and as a result, the manufacturing cost can be reduced. Moreover, there is no discoloration and deterioration of the light emitting element 5 by the surface cleaning process. Furthermore, although the circular hole 1A-0 is provided in the substrate 1A, since the large substrate 1A does not have to be porous as much as the porous substrate 1B is provided, the formation of the lead terminals 2-1 and 2-2 is the first. The manufacturing cost can be further reduced by, for example, being easier than on the porous substrate 1 ′ of the embodiment.

次に、多孔質基板1’の通気孔1’a及び多孔質基板1Bの通気孔1B−0の形成方法について説明する。尚、本発明においては、通気孔の形成方法は、以下の形成方法に限られるものではない。   Next, a method for forming the air holes 1'a of the porous substrate 1 'and the air holes 1B-0 of the porous substrate 1B will be described. In addition, in this invention, the formation method of a vent hole is not restricted to the following formation methods.

通気孔の一形成方法として、複数の粒子径のアルミナ粒子を組合わせたアルミナ焼結体を用いることができる。たとえば、平均粒子径が2〜5μmの粗粒アルミナ粒子と、平均粒子径が1μm以下の微粒アルミナ粒子とを所定比で充分に混合し、加圧して成型し、高温たとえば1700℃かつ大気雰囲気で焼結する。この結果、直径2μm以下の通気孔を有するアルミナ焼結体が多孔質基板1’もしくは多孔質基板1Bとして形成される。   As a method for forming the air holes, an alumina sintered body in which alumina particles having a plurality of particle diameters are combined can be used. For example, coarse alumina particles having an average particle diameter of 2 to 5 μm and fine alumina particles having an average particle diameter of 1 μm or less are sufficiently mixed at a predetermined ratio, pressed and molded, and heated at a high temperature, for example, 1700 ° C. and in an air atmosphere. Sinter. As a result, an alumina sintered body having vent holes with a diameter of 2 μm or less is formed as the porous substrate 1 ′ or the porous substrate 1 </ b> B.

通気孔の他の形成方法として、アルミニウム基板表面を陽極酸化して多数の窪みを有する陽極酸化皮膜を形成し、酸あるいはアルカリを用いて陽極酸化皮膜を部分的に溶解させ、さらに窪みを陽極酸化して窪みを深さ方向に成長させて通気孔としての貫通孔を形成する。   As another method for forming the air holes, the anodized film having a number of depressions is formed by anodizing the surface of the aluminum substrate, the anodized film is partially dissolved using acid or alkali, and the depressions are further anodized. Then, the recess is grown in the depth direction to form a through hole as a vent hole.

尚、空気を利用した吸引の場合、多孔質基板1’の通気孔1’a及び多孔質基板1Bの通気孔1B−0の直径は数10nm〜数100nmが好ましく、LED素子等の発光素子を吸引する場合には、光漏れの程度、吸引力に応じて、上記直径は0.1〜0.2μmが好ましい。また、多孔質基板1’及び多孔質基板1Bの平坦度、突孔率についても、LED素子等の発光素子の大きさ、吸引力、求める強度に応じて、適宜選択される。   In the case of suction using air, the diameter of the vent hole 1′a of the porous substrate 1 ′ and the vent hole 1B-0 of the porous substrate 1B is preferably several tens nm to several hundred nm, and a light emitting element such as an LED element is used. In the case of suction, the diameter is preferably 0.1 to 0.2 μm depending on the degree of light leakage and the suction force. The flatness and the porosity of the porous substrate 1 ′ and the porous substrate 1 </ b> B are also appropriately selected according to the size of the light emitting element such as the LED element, the suction force, and the required strength.

また、上述の多孔質基板1’及び多孔質基板1Bの形状は円形、矩形等に適宜変更され得る。   In addition, the shapes of the porous substrate 1 ′ and the porous substrate 1 </ b> B described above can be appropriately changed to a circular shape, a rectangular shape, or the like.

上述の第1、第2の実施の形態では、通気孔が基板全体に亘り形成されている多孔質基板を用いたが、通気孔は、少なくとも発光素子搭載領域に形成されていればよく、基板上に部分的に形成されているものを用いることができる。また、発光素子搭載領域の外側には、樹脂層との接着強度を向上するための表面凹凸構造(基板を貫通するもの、貫通しないものも含む)を形成することもできる。   In the first and second embodiments described above, the porous substrate in which the air holes are formed over the entire substrate is used. However, the air holes may be formed at least in the light emitting element mounting region. What was formed partially on the top can be used. In addition, an uneven surface structure (including those penetrating the substrate and those not penetrating the substrate) for improving the adhesive strength with the resin layer can also be formed outside the light emitting element mounting region.

さらに、上述の第1、第2の実施の形態は光半導体モジュールに関するものであるが、本発明は光半導体モジュール以外の半導体モジュールにも適用できる。この場合には、発光素子5は半導体素子となる。   Further, the first and second embodiments described above relate to the optical semiconductor module, but the present invention can also be applied to semiconductor modules other than the optical semiconductor module. In this case, the light emitting element 5 is a semiconductor element.

上述の第1、第2の実施の形態では、半導体素子等を封止する被覆部材として、樹脂を用い、封止層として樹脂層を形成したが、上述のごとく、本発明における被覆部材は、樹脂に限定されるものではなく、ガラスなどの他の被覆部材を用いることができ、封止層としてガラス層などを形成することができる。被覆部材は、半導体素子が受光素子あるいは発光素子である場合には、透光性部材であればよい。   In the above-described first and second embodiments, a resin is used as a covering member for sealing a semiconductor element and the like, and a resin layer is formed as a sealing layer. It is not limited to resin, and other covering members such as glass can be used, and a glass layer or the like can be formed as a sealing layer. The covering member may be a light-transmitting member when the semiconductor element is a light receiving element or a light emitting element.

1:基板
1’:多孔質基板
1’a:通気孔
1A:基板
1A−0:円孔
1B:多孔質基板
1B−0:通気孔
2−1,2−2:リード端子
3:キャビティ壁部
4:真空ステージ
5:発光素子
6:接着剤
6a:汚染物層
7:コレット
8−1,8−2:ボンディングワイヤ
9:樹脂層
10、20、30:光半導体モジュール
801:真空チャンバ
802:ホルダ
803:真空ポンプ
804:高周波電源
805:接地電極
1: substrate 1 ′: porous substrate 1′a: vent hole 1A: substrate 1A-0: circular hole 1B: porous substrate 1B-0: vent holes 2-1, 2-2: lead terminal 3: cavity wall
4: Vacuum stage
5: Light emitting element 6: Adhesive
6a: Contaminant layer
7: Collet
8-1, 8-2: Bonding wire
9: Resin layer 10, 20, 30: Optical semiconductor module 801: Vacuum chamber 802: Holder 803: Vacuum pump 804: High frequency power source 805: Ground electrode

Claims (5)

半導体素子搭載領域及び該半導体素子搭載領域の外側の周囲領域を含む所定領域全体に亘って複数の通気孔を有する基板を準備する工程と、
前記通気孔の裏面側より吸引して前記基板の前記半導体素子搭載領域に半導体素子を吸着して仮固定する半導体素子仮固定工程と、
前記半導体素子を前記基板に仮固定した状態で、前記半導体素子と前記基板上に設けられた導電部との間に給電ワイヤを接合するワイヤボンディング工程と、
前記半導体素子を前記基板に仮固定した状態で、前記半導体素子及び前記給電ワイヤを被覆部材で封止すると共に、該封止により前記半導体素子と前記基板を本固定する封止兼半導体素子本固定工程と
を具備し、
前記封止兼半導体素子本固定工程において、前記被覆部材が前記周囲領域の上面側開口がある通気孔の上方の一部に充填される半導体モジュールの製造方法。
Preparing a substrate having a plurality of vent holes over a predetermined area including a semiconductor element mounting area and a peripheral area outside the semiconductor element mounting area ;
A semiconductor element temporary fixing step of sucking and temporarily fixing a semiconductor element to the semiconductor element mounting region of the substrate by sucking from the back surface side of the vent;
A wire bonding step of bonding a power supply wire between the semiconductor element and a conductive portion provided on the substrate in a state where the semiconductor element is temporarily fixed to the substrate;
With the semiconductor element temporarily fixed to the substrate, the semiconductor element and the power supply wire are sealed with a covering member, and the semiconductor element and the substrate are permanently fixed by the sealing. comprising the step,
A method for manufacturing a semiconductor module, wherein, in the sealing and semiconductor element main fixing step, the covering member is filled in a part above an air hole having an opening on the upper surface side of the peripheral region .
前記基板は多孔質基板を具備する請求項1に記載の半導体モジュールの製造方法。   The method of manufacturing a semiconductor module according to claim 1, wherein the substrate comprises a porous substrate. 前記基板は、開口を有する第1の基板と、該第1の基板上に配置され、前記通気孔を有する多孔質基板からなる第2の基板とを含み、
前記第1の基板上に前記導電部が形成され、前記第2の基板上に前記半導体素子搭載領域が形成され、
前記開口上に前記半導体素子搭載領域が配置され、
前記半導体素子仮固定工程において、前記開口を介して、前記多孔質基板の裏面より吸引して前記半導体素子を吸着する請求項1に記載の半導体モジュールの製造方法。
The substrate includes a first substrate having an opening, and a second substrate made of a porous substrate disposed on the first substrate and having the vent hole ,
The conductive portion is formed on the first substrate, the semiconductor element mounting region is formed on the second substrate,
The semiconductor element mounting region is disposed on the opening,
2. The method of manufacturing a semiconductor module according to claim 1, wherein, in the semiconductor element temporary fixing step, the semiconductor element is adsorbed by suction from the back surface of the porous substrate through the opening.
前記基板の通気孔のうち少なくとも前記半導体素子直下に存在する通気孔は前記基板上面に対して略垂直である請求項1乃至請求項3のいずれかに記載の半導体モジュールの製造方法。   4. The method for manufacturing a semiconductor module according to claim 1, wherein at least a vent hole immediately below the semiconductor element among the vent holes of the substrate is substantially perpendicular to the upper surface of the substrate. 5. 半導体素子搭載領域及び該半導体素子搭載領域の外側の周囲領域を含む所定領域全体に亘って形成された複数の通気孔を有する基板と、
前記基板上に形成された導電部と、
前記半導体素子搭載領域上に配置された半導体素子と、
前記半導体素子と前記導電部とを接続する給電ワイヤと、
前記半導体素子及び前記給電ワイヤを被覆する封止層と
を具備し、
前記半導体素子搭載領域において、前記基板と前記半導体素子の底面とが、直接接触しており、
前記封止層は前記周囲領域の上面側開口がある通気孔の上方の一部に充填している半導体モジュール。
A substrate having a plurality of vent holes formed over a predetermined region including a semiconductor element mounting region and a peripheral region outside the semiconductor element mounting region ;
A conductive portion formed on the substrate;
A semiconductor element disposed on the semiconductor element mounting region;
A power supply wire connecting the semiconductor element and the conductive portion;
A sealing layer covering the semiconductor element and the power supply wire,
In the semiconductor element mounting region, the substrate and the bottom surface of the semiconductor element are in direct contact,
The semiconductor module is a semiconductor module in which the sealing layer is filled in a part above an air hole having an opening on the upper surface side of the surrounding region .
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