JP5791382B2 - Wafer bonding method - Google Patents

Description

  The present invention relates to a wafer bonding method for bonding main surfaces of wafers having the same main surface size.

For example, when bonding by anodic bonding is used, bonding by an adhesive is used, or bonding by direct bonding may be used as a wafer bonding method.
In particular, in the wafer bonding method using direct bonding, bonding can be performed without providing a metal film between the wafers as in the case of bonding using anodic bonding, as in the case of bonding using an adhesive. Can be bonded to each other without providing a contact agent between the wafers, and is therefore often used in a method for manufacturing an optical conversion element.

The optical conversion element has a characteristic of converting and emitting incident light.
Such an optical conversion element is composed of, for example, two wafers, and the main surfaces of the two wafers are bonded by direct bonding.

One wafer uses a left quartz crystal having crystal axes composed of an X axis, a Y axis, and a Z axis orthogonal to each other, and both main surfaces are rectangular.
One of the wafers is an optical rotation plate whose main surface is parallel to the X axis and Y axis and whose thickness direction is parallel to the Z axis.

The other wafer uses a right crystal having crystal axes composed of an X axis, a Y axis, and a Z axis that are orthogonal to each other, and both main surfaces are rectangular.
The other wafer has the same main surface as the main surface of one wafer.
The other wafer is an optical rotation plate whose main surface is parallel to the X axis and Y axis and whose thickness direction is parallel to the Z axis.

  In such an optical component element, one main surface of one wafer and one main surface of the other wafer are bonded by direct bonding, and light incident from the other main surface of one wafer is converted. However, it has a characteristic of emitting light from the other main surface of the other wafer (see, for example, Patent Document 1).

  A bonding method for bonding wafers by direct bonding includes, for example, a wafer mounting process, an irradiation process, a wafer placement process, and a bonding process.

(Wafer mounting process)
The wafer mounting process is a process of mounting a wafer to be bonded to a spacer, for example.
As shown in FIGS. 6A and 6B, the spacer 210 has a rectangular flat plate shape, and a first concave space 211 and a second concave space 212 are formed on one main surface. Is formed.
Further, the spacer 210 has a first recessed space 211 having a rectangular shape when viewed from one main surface, and the second recessed space 212 has four corners of the opening of the first recessed space 211. Are formed in a circular shape.
The first recess space 211 has the same size as the main surface of the wafer to which the bottom surface is bonded, and the length from the opening to the bottom surface of the first recess space 211 is from one main surface of the wafer to the other. It is shorter than the length to the main surface.
The second recess space 212 has a size that allows the tip of the tweezers to be inserted, and is used when the wafer is taken out from the spacer 210.
In the wafer mounting process, the wafer to be bonded is mounted on the spacer 210 so as to be accommodated in the first recessed space 212 of the spacer 210.

(Irradiation process)
For example, as shown in FIG. 7, the irradiation process is a process of irradiating light emitted from the excimer irradiation lamp 120 onto a surface to be bonded to the wafer W mounted on the spacer 210.
In the irradiation process, the light emitted from the excimer irradiation lamp 120 is irradiated to remove the oxide film, adsorbate, and contaminants on the surface of the wafer W, and the surface of the irradiated wafer W is activated.

(Wafer placement process)
As shown in FIG. 9, the wafer arrangement process is a process in which the irradiated surfaces of the wafer W taken out from the spacer 210 are opposed to each other.
In the wafer placement step, the surface irradiated with the light irradiated from the excimer irradiation lamp 120 of one wafer W is opposed to the surface irradiated with the light irradiated from the excimer irradiation lamp 120 of the other wafer W. The wafer W is arranged in a state of being held by tweezers so as to sandwich the side surface of the other wafer W.

(Lamination process)
The bonding process was activated by bringing the surfaces of the wafer W arranged so that the irradiated surfaces of the wafer W face each other while being held by tweezers so as to sandwich the side surface of the other wafer W. This is a process of joining the surfaces together.

  Therefore, in the wafer bonding method, after the wafer W is irradiated with the light emitted from the excimer irradiation lamp 120, the irradiated surface of one wafer W and the irradiated surface of the other wafer W face each other. The other wafer W is sandwiched and held by tweezers, and after placing the wafer W, it is brought into contact and bonded.

  JP 2007-114520 A

However, the conventional wafer bonding method uses tweezers so that the irradiated surface of one wafer faces the irradiated surface of the other wafer after irradiating the wafer with light emitted from an excimer irradiation lamp. Since the other wafer is sandwiched and held, and the wafer is placed and brought into contact with each other, it takes time and effort, and after bonding, the main surface of one wafer is directed from one wafer to the other wafer. When viewed, there is a risk that a joining deviation occurs such that a predetermined edge portion of the main surface of one wafer does not overlap a predetermined edge portion of the main surface of the other wafer.
Therefore, in the conventional wafer bonding method, when a bonding deviation occurs, the wafer having the bonding deviation must be cleaned and re-bonded in order to re-bond, which requires labor and time, and is produced. May decrease.

Moreover, the conventional wafer bonding method irradiates a wafer to be bonded with light emitted from an excimer irradiation lamp so that the irradiated surface of one wafer and the irradiated surface of the other wafer face each other. Since the other wafer is sandwiched and held by tweezers and the two wafers are placed and contacted and bonded, the deposits that have adhered to the tweezers adhere to the surface of the wafer to be bonded, and the foreign matter between the bonded wafers There is a risk of mixing. In addition, the edge of the wafer surface to be bonded may be damaged by tweezers, and the lost portion may be mixed as foreign matter between the wafers.
For this reason, according to the conventional wafer bonding method, foreign matter is mixed between the wafers to be bonded,
There is a risk that productivity after bonding may be reduced.
When light is incident in the direction from one bonded wafer to the other wafer,
In the conventional wafer bonding method, there is a risk that the appearance defect such as interference fringes caused by foreign matters mixed between the bonded wafers may occur and productivity may be reduced.

  SUMMARY OF THE INVENTION An object of the present invention is to provide a wafer bonding method with improved productivity capable of bonding wafers without causing a wafer misalignment and without mixing foreign substances between the wafers.

  In order to solve the above-mentioned problem, a wafer joining method for joining two main surfaces of two wafers having both main surfaces formed in a quadrangular shape, wherein both main surfaces are formed in a quadrangular shape from one main surface. Three columnar portions are provided on one main surface of the flat plate portion in which the through hole is formed on the other main surface so as to form a triangle when the centers of the surfaces in contact with the flat plate portion are respectively connected by straight lines. In a bonding jig, the predetermined two side surfaces of the wafer are brought into contact with the side surface of the column portion while the one main surface of the wafer is brought into contact with the surface of the flat plate portion on which the column portion is provided. A wafer mounting step of mounting the wafer; an irradiation step of irradiating light emitted from an excimer irradiation lamp onto a surface of the wafer facing the surface of the bonding jig contacting the flat plate portion; and one of the wafers The main surface remains in contact with the flat plate In a state where the wafer is sucked from the opening of the through hole on the other main surface side of the flat plate portion and the wafer is held in the bonding jig, the predetermined two side surfaces of one wafer are in contact with each other. A joining jig placement step for placing the joining jig such that the side surface of the pillar portion is in contact with the side surface of the flat plate portion on which the other two predetermined side surfaces of the other wafer are located on the same plane; A bonding step of bringing the wafer held by the two bonding jigs into contact with each other and bonding the wafer together; and a detaching step of removing the wafer bonded from the bonding jig. In the jig placement step, the surface of the flat plate portion on which the column portion of the bonding jig on which one wafer is mounted is in contact with the flat plate portion of the bonding jig on which the other wafer is mounted. ing Surface of the pillar portion that faces is equal to or facing the.

According to such a wafer bonding method, one of the flat plate portions is formed such that a triangular shape is formed by connecting the centers of the flat plate portion in which the through-hole is formed and the surfaces of the three column portions in contact with the flat plate portion with straight lines. A bonding jig provided with a pillar portion provided on the main surface of the wafer, wherein one main surface of the wafer is brought into contact with the surface of the flat plate portion provided with the pillar portion, and a predetermined two of the wafer is provided. By bringing one side surface into contact with the side surface of the column part, the wafer is mounted on a bonding jig that can be flush with the two side surfaces of the flat plate part. Each bonding jig is arranged so that the side surface of the column portion where two predetermined side surfaces of the wafer are in contact with the side surface of the flat plate portion where the other two side surfaces of the other wafer are located on the same plane. So that it was emitted from the excimer irradiation lamp There can be contacted by easily opposed surfaces between the wafer irradiated.
For this reason, according to such a wafer bonding method, it is possible to easily bond a wafer having a rectangular main surface so as not to cause bonding deviation, and to improve productivity after bonding.

Further, according to such a wafer bonding method, the wafer is irradiated with light emitted from the excimer irradiation lamp while the wafer is mounted on the bonding jig, and is sucked from the through hole to hold the wafer on the bonding jig. Since the bonding jig is arranged and the wafer surfaces irradiated with light are bonded and bonded together, the wafers can be bonded without pinching the side surfaces of the wafer with tweezers.
For this reason, according to such a wafer bonding method, it is possible to prevent foreign matters from being mixed between the main surfaces of the wafer being bonded as compared with the conventional wafer bonding method, and production after bonding is performed. Can be improved.
When light is incident in the direction from one wafer to the other toward the other wafer, such a wafer bonding method can suppress the entry of foreign matter compared to the conventional wafer bonding method. Therefore, it is possible to suppress appearance defects due to interference fringes due to the mixing of foreign matters as compared with the conventional wafer bonding method, and it is possible to improve productivity as compared with the conventional wafer bonding method.

(A) is a perspective view which shows an example of the state of the jig for joining used with the bonding method of the wafer which concerns on embodiment of this invention, (b) is used with the bonding method of the wafer which concerns on embodiment of this invention. It is a top view which shows an example of the state of the jig for joining, (c) is sectional drawing which shows an example of the state of the jig for joining used with the bonding method of the wafer which concerns on embodiment of this invention. It is a perspective view which shows an example of the state of the wafer mounting process in the bonding method of the wafer which concerns on embodiment of this invention. It is sectional drawing which shows an example of the state of the irradiation process in the bonding method of the wafer which concerns on embodiment of this invention. It is sectional drawing which shows an example of the state of the jig | tool arrangement | positioning process for joining in the joining method of the wafer which concerns on embodiment of this invention. It is sectional drawing which shows an example of the state of the bonding process in the bonding method of the wafer which concerns on embodiment of this invention. (A) is a perspective view which shows an example of the state of the spacer used with the conventional bonding method of a wafer, (b) is sectional drawing which shows an example of the state of the spacer used with the conventional bonding method of a wafer. It is sectional drawing which shows an example of the state of the irradiation process in the conventional wafer bonding method. It is sectional drawing which shows an example of the state of the wafer arrangement | positioning process in the conventional wafer bonding method.

  Next, the best mode for carrying out the present invention will be described. In each drawing, the state of each component is exaggerated for easy understanding.

In the wafer bonding method according to the embodiment of the present invention, the main surfaces of two wafers whose both main surfaces are rectangular are bonded by direct bonding. Here, the case where the main surface of the wafer has a square shape, for example, is described.
In addition, the bonding method according to the embodiment of the present invention includes a wafer mounting process, an irradiation process, a bonding jig arrangement process, a bonding process, and a removing process.

(Wafer mounting process)
As shown in FIG. 2, in the wafer mounting process, one main surface of the flat plate portion 111 in which both main surfaces are formed in a square shape and through holes 112 (see FIG. 1) are formed from one main surface to the other main surface. The pillar portion 113 is provided on a joining jig 110 in which three pillar portions 113 are provided so that the main surface has a triangular shape when the centers of the surfaces in contact with the flat plate portion 111 are respectively connected by straight lines. The step of mounting the wafer W so that one of the main surfaces of the wafer W is in contact with the surface of the flat plate portion 111 and two predetermined side surfaces of the wafer W are in contact with the side surfaces of the column portion 111. .

  In the wafer mounting process, for example, two wafers W are used, and each wafer W is mounted on the bonding jig 110.

One wafer W uses, for example, a right crystal having crystal axes composed of an X axis, a Y axis, and a Z axis orthogonal to each other, and both main surfaces are square.
One wafer W is, for example, an optical rotation plate whose main surface is parallel to the X axis and Y axis and whose thickness direction is parallel to the Z axis.

The other wafer W has the same main surface as the main surface of one wafer W.
The other wafer W uses, for example, a left crystal having crystal axes composed of an X axis, a Y axis, and a Z axis that are orthogonal to each other, and both main surfaces have a square shape.
The other wafer W has, for example, a main surface parallel to the X axis and Y axis and a thickness direction parallel to the Z axis.

  As shown in FIGS. 1A, 1 </ b> B, and 1 </ b> C, the joining jig 110 includes a flat plate portion 111 and three pairs of pillar portions 113.

The flat plate portion 111 has, for example, a rectangular shape on both main surfaces, and a notch is formed at one predetermined corner. At this time, the size of the main surface of the flat plate portion 111 is larger than the size of the main surface of the wafer W to be bonded.
Further, as shown in FIGS. 1A and 1C, the flat plate portion 111 has a through hole 112 formed from one main surface to the other main surface.
Moreover, as shown in FIGS. 1A, 1B, and 1C, the flat plate portion 111 is provided with a column portion 113 on one main surface.

For example, as shown in FIG. 1A, FIG. 1B, and FIG. 1C, the column portions 113 are used in pairs.
Moreover, the column part 113 is provided in the column shape where both main surfaces are circular shape, for example, as shown to Fig.1 (a) and FIG.1 (b).
In addition, the length of the pillar portion 113 from one principal surface of the pillar portion 113 to the other principal surface of the pillar portion 113 is a length from one principal surface of the wafer W to which the other principal surface of the wafer W is bonded. It is longer than that.
Further, for example, the pillar portion 113 is provided with a screw groove (not shown) on one main surface side of the pillar portion 113, and a screw (not shown) from the other principal surface side of the flat plate portion 111. Thus, the pillar portion 113 can be fixed.

Further, as shown in FIG. 1A and FIG. 1C, the column portion 113 is formed so that one main surface of the column portion 113 is in contact with one main surface of the flat plate portion 111. It is provided on one main surface.
In addition, when the pillar portion 113 is viewed from one principal surface of the flat plate portion 111 from the side of the pillar portion 113, the pillar portion 113 has a triangular shape when the centers of the surfaces of the pillar portion 113 in contact with the flat plate portion 111 are respectively connected by a straight line Is provided.
Moreover, the column part 113 is provided along the edge part of the predetermined | prescribed two edge | sides of one main surface of the flat plate part 111, for example, as shown to Fig.1 (a) and FIG.1 (b). At this time, two pillars 113 are provided side by side along the edge of one side that is the predetermined two sides, and one column is provided along the edge of the other side that is the two predetermined sides. A column portion 113 is provided.

  Further, the pillar portion 113 is configured to place the wafer W on the bonding jig so that two predetermined side surfaces are in contact with the side surfaces of the column portion 113 while the one main surface of the wafer W is in contact with one main surface of the flat plate portion 111. When mounted, one side of the flat plate portion 111 is positioned so that two other predetermined side surfaces of the wafer W are flush with a side surface including the other two predetermined sides of one main surface of the flat plate portion 111. Is provided on the main surface.

  Here, the side surface of the column portion 113 is defined as a surface of the column portion 113 in contact with the flat plate portion 111 and a surface in contact with the surface of the column portion 113 facing this surface.

  Moreover, the column part 113 is provided in the position which the surfaces of the column part 113 which opposes the surface which contact | connects the flat plate part 111 do not oppose in the joining jig arrangement | positioning process mentioned later.

  Accordingly, the joining jig 110 is provided with three column portions 113 on one main surface of the flat plate portion 111 in which the through hole 112 is formed, and one main surface of the flat plate portion 111 is formed from the column portion 113 side. When viewed, if one of the main surfaces of the wafer W is brought into contact with the main surface of the flat plate portion 111 provided with the column portion 113 and two predetermined side surfaces of the wafer W are brought into contact with the side surface of the column portion 113, The other two side surfaces of the wafer W are configured to be on the same plane as the side surface of the flat plate portion 111.

In the wafer mounting process, one main surface of the wafer W is in contact with the surface of the flat plate portion 111 on which the column portion 113 is provided, and two predetermined side surfaces of the wafer W are in contact with the side surface of the column portion 113. The wafer W is mounted on the bonding jig 110.
At this time, two predetermined side surfaces of the wafer W are located on the same plane as the side surface of the column portion 113, and two other predetermined side surfaces of the wafer W are located on the same plane as the side surface of the flat plate portion 111. ing.

(Irradiation process)
As shown in FIG. 3, the irradiation step is a step of irradiating the surface of the wafer W opposite to the surface in contact with the flat plate portion 111 of the bonding jig 110 with the light emitted from the excimer irradiation lamp 120.
In the irradiation process, the light emitted from the excimer irradiation lamp 120 is irradiated onto the wafer W, whereby the oxide film, adsorbed matter and contaminants on the surface of the wafer W are removed, and the surface of the wafer W is activated.

(Jig placement process for joining)
As shown in FIG. 4, the bonding jig arrangement step includes the through hole 112 on the other main surface side of the flat plate portion 111 so that one main surface of the wafer W remains in contact with the flat plate portion 111. In a state where the wafer W is held by the bonding jig 110, the side surface of the pillar portion 113 that is in contact with two predetermined side surfaces of one wafer W and the predetermined surface of the other wafer W are sucked from the opening of the first wafer W. In this step, the joining jig 110 is disposed so that the other two side surfaces are in contact with the side surfaces of the flat plate portion 111 located on the same plane.

  Here, the bonding jig 110 on which one wafer W is mounted is referred to as a first bonding jig 110, and the bonding jig 110 on which the other wafer W is mounted is referred to as a second bonding jig 110.

In the bonding jig arrangement step, suction means (not shown) is used to open the through hole 112 formed in the flat plate portion 111 of the bonding jig 110 and from the opening on the other main surface side of the flat plate portion 111. The wafer W is held on the bonding jig 110 by suction.
Thereafter, in the bonding jig arrangement step, as shown in FIG. 4, the side surface of the column portion 113 in which two predetermined side surfaces of one wafer W are in contact with each of the bonding jigs 110 holding the wafer W. The flat plate portion that is in the same plane as the predetermined two other side surfaces of the one wafer W while the side surface of the flat plate portion 111 that is in the same plane as the predetermined two other side surfaces of the other wafer W are in contact with each other Each bonding jig 110 is arranged at a position where the side surface of 111 and the side surface of the pillar portion 113 in contact with two predetermined side surfaces of the other wafer W come into contact with each other.

  Therefore, in the wafer mounting process, two predetermined side surfaces of the wafer W are positioned on the same plane as the side surface of the pillar portion 113, while two other predetermined side surfaces of the wafer W are on the same plane as the side surface of the flat plate portion 111. The position where the two predetermined side surfaces of the wafer W are in contact with the side surface of the pillar portion 113 and the side surface of the flat plate portion 111 which are on the same plane as the other two predetermined side surfaces of the wafer W. By providing the first and second surfaces, the surfaces of the wafers W facing the surface in contact with the flat plate portion 111 can be easily arranged so as to face each other.

Further, in the wafer mounting step, the surface opposite to the surface of the pillar portion 113 of the bonding jig 110 on which one wafer W is mounted and is in contact with the flat plate portion 111 and the other wafer W are mounted. The surface of the flat plate portion 111 provided with the column portion 113 of the bonding jig 110 is opposed to the flat plate portion 111 provided with the column portion 113 of the bonding jig 110 on which one wafer W is mounted. The surface and the surface of the column portion 113 of the bonding jig 110 on which the other wafer W is mounted, which is opposed to the surface in contact with the flat plate portion 111, are arranged to face each other.
Therefore, in the wafer mounting process, the surface opposite to the main surface of the column portion 113 of the bonding jig 110 on which one wafer W is mounted and is in contact with the flat plate portion 111 and the other wafer W are mounted. The main surface of the pillar portion 113 of the joining jig 110 that is in contact with the surface that is in contact with the flat plate portion 111 is located at a position that does not face the surface.

(Lamination process)
As shown in FIG. 5, the bonding process is a process of bonding the wafer W by bringing the wafers W held by the two bonding jigs 110 arranged into contact with each other.
In the bonding step, the main surface of one wafer W activated in the irradiation step facing the surface in contact with the flat plate portion 111 and the other wafer activated in the irradiation step facing the surface in contact with the flat plate portion 111. By being in contact with the main surface of W, one wafer W and the other wafer W are bonded by direct bonding.

(Removal process)
The removal process is a process of removing the wafer W bonded from the bonding jig 110.
In the detaching process, as described above, the bonding jig 110 in which a notch is formed in one end portion of one main surface of the flat plate portion 111 is used. Therefore, the wafer W bonded from the bonding jig 110 is used. Can be easily removed.

According to the wafer bonding method according to the embodiment of the present invention, the centers of the flat plate portion 111 in which the through hole 112 is formed and the surfaces of the three column portions 113 in contact with the flat plate portion 111 are connected by straight lines. A joining jig 110 in which a pillar portion 113 is provided on one main surface of the flat plate portion 111 so as to have a triangular shape, and a flat plate portion in which the pillar portion 113 is provided on one main surface of the wafer W. The wafer W is attached to the bonding jig 110 that can be flush with the two side surfaces of the flat plate portion 111 by bringing predetermined two side surfaces of the wafer W into contact with the side surfaces of the pillar portions while contacting the surface of the wafer 111. , And holding the wafer W on the bonding jig 110, the side surface of the pillar portion 113 in contact with the predetermined two side surfaces of one wafer W and the other predetermined two side surfaces of the other wafer W are Flat plate located on the same plane Since the bonding jigs 110 are arranged so that the side surfaces of the wafer 11 are in contact with each other, the surfaces of the wafers W irradiated with the light emitted from the excimer irradiation lamp 120 can be easily opposed to each other. it can.
For this reason, according to the bonding method of the wafer W according to the embodiment of the present invention, the wafer W having a rectangular main surface can be easily bonded so as not to be misaligned, and productivity after bonding can be obtained. Can be improved.

Further, according to the wafer bonding method according to the embodiment of the present invention, the wafer W is irradiated with the light emitted from the excimer irradiation lamp 120 in a state where the wafer W is mounted on the bonding jig 110, and the through hole is formed. The wafer W is sucked from 112, held in the bonding jig 110, the bonding jig 110 is disposed, and the surfaces of the wafer W irradiated with light are bonded and bonded together. The wafer W can be bonded without any problem.
For this reason, according to the wafer bonding method according to such an embodiment of the present invention, it is possible to suppress foreign matters from being mixed between the main surfaces of the wafer W being bonded as compared with the conventional wafer bonding method. And productivity after bonding can be improved.
When light is incident in the direction from one bonded wafer W to the other wafer W, the wafer bonding method according to the embodiment of the present invention as compared with the conventional wafer bonding method. As a result, it is possible to suppress the appearance defects due to interference fringes due to the inclusion of foreign matter compared to the conventional wafer bonding method, and improve productivity compared to the conventional wafer bonding method. Can be made.

Further, according to the wafer bonding method according to the embodiment of the present invention, the groove portion for the screw is provided on the main surface of the column portion 113 facing the flat plate portion 113 side, and the flat plate portion 113 and the column portion 113 are fixed using screws. Therefore, the joining jig 110 can be easily formed.
For this reason, according to the wafer bonding method according to the embodiment of the present invention, the bonding jig 110 can be easily formed as long as both the main surfaces are bonded to the same rectangular wafer. Can be improved.

  In addition, although the case where one through hole is provided in the flat plate portion has been described, the wafer is sucked from the opening portion of the through hole on the other main surface side of the flat plate portion by using a suction means, and one of the flat plate portions. A plurality of through holes may be formed as long as they can be held on the main surface.

  Although the case where the optical rotatory plate made of the right crystal and the optical rotatory plate made of the left crystal are joined is described, for example, if the main surface of the wafer is joined by direct joining, a wavelength plate may be bonded.

  Moreover, although the case where the wafer is made of quartz has been described, glass may be used as long as the main surfaces of the wafer are bonded directly.

  Further, although the case where two wafers are bonded is described, for example, the bonded wafers may be regarded as one wafer and the bonded wafers may be further bonded.

  Moreover, although the case where the jig | tool for joining whose both main surfaces of a pillar part is circular shape was used, if both the principal surfaces of a pillar part are the same shape, it has become square shape, for example May be.

  Moreover, although the case where three pillar parts are provided is described, if it is provided side by side along the edges of two predetermined sides of one main surface of the flat plate part, four or more parts are provided. May be. For example, five pillar portions may be provided. At this time, two predetermined sides of one main surface of the flat plate portion are provided side by side along an edge of the one side, and two predetermined sides of one main surface of the flat plate portion are provided. Are provided side by side along the edge of the other side.

110, 210 Joining jigs 111, 211 Flat plate portions 112, 212 Through holes 113, 213 Column portion 120 Excimer irradiation lamp W Wafer 210 Spacer 211 First recess space 212 Second recess space

Claims (1)

A wafer bonding method for bonding the main surfaces of two wafers whose both main surfaces are rectangular,
When the center of the surface in contact with the flat plate portion is connected with one main surface of the flat plate portion in which both main surfaces are formed in a quadrangular shape and through holes are formed from one main surface to the other main surface, a triangle is obtained. On the side surface of the column portion, one of the main surfaces of the wafer is brought into contact with a surface of the flat plate portion on which the column portion is provided on a joining jig provided with three column portions so as to have a shape. A wafer mounting step of mounting the wafer so as to contact two predetermined side surfaces of the wafer;
An irradiation step of irradiating light emitted from an excimer irradiation lamp onto the surface of the wafer facing the surface in contact with the flat plate portion of the bonding jig;
The wafer is sucked from the opening of the through hole on the other main surface side of the flat plate portion so that one main surface of the wafer remains in contact with the flat plate portion, and the wafer is held in the bonding jig Thus, the side surface of the pillar portion, which is in contact with two predetermined side surfaces of one wafer, is in contact with the side surface of the flat plate portion where the other two side surfaces of the other wafer are located on the same plane. , A joining jig arrangement step of arranging the joining jig;
A bonding step in which the wafer held by the two bonding jigs disposed is brought into contact with and bonded to the wafer;
A removal step of removing the wafer bonded from the bonding jig;
With
In the joining jig arrangement step, the surface of the flat plate portion on which the column portion of the joining jig on which one wafer is mounted and the flat plate of the bonding jig on which the other wafer is mounted. A method for bonding wafers, wherein the surface of the column portion facing the surface in contact with the portion faces the surface.

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