JP5800519B2 - Semiconductor system, its startup method, and program - Google Patents

Description

  The present invention relates to a semiconductor system for starting a semiconductor bonded to an electric substrate, a starting method thereof, and a program.

  Semiconductors are used in electrical boards and electrical board systems. An operation guarantee temperature range is defined for the semiconductor, and the operation is not guaranteed in a temperature environment outside the operation guarantee temperature range. In a low temperature environment outside the guaranteed operating temperature range, it is necessary to start the semiconductor with the junction temperature between the electric substrate and the semiconductor reaching the minimum guaranteed operating temperature. For this purpose, it is necessary to measure the junction temperature of the semiconductor, but it is difficult to measure the junction temperature. Usually, the surface temperature of the semiconductor package is measured, and the junction temperature is converted therefrom. FIG. 5A is a diagram for explaining this conversion, and the conversion equation for the junction temperature is as follows.

Tj = Tc + P × θjc
Tj (° C.): junction temperature
Tc (° C.): Semiconductor package surface temperature
P (W): Junction power loss
θjc (° C./W): Thermal resistance of semiconductor package As a prior art for quickly putting a semiconductor in an operation guaranteed temperature range at a low temperature, there is Patent Document 1. A heating circuit is provided inside the semiconductor. When the temperature is low, the semiconductor is warmed by the heating circuit, and when the junction temperature reaches a predetermined temperature, the operation of the semiconductor is started. Further, the semiconductor is heated by a heating unit provided outside the semiconductor, and when the temperature at the temperature measurement point reaches a predetermined temperature, the operation of the semiconductor is started.

JP 2007-258216 A

  However, in the prior art disclosed in Patent Document 1 described above, no description is given regarding the relationship between the temperature measurement location and the junction temperature. In general, the surface temperature (Tc) of the semiconductor package, which is a temperature measurement location, gradually increases according to the following equation with respect to the junction temperature.

Tc = (T1-T2-P * [theta] jc) (1-exp- ^kt ) + T2
T1 (° C.): Saturation temperature of semiconductor junction (junction)
T2 (° C): Semiconductor ambient temperature
P (W): Semiconductor power loss
θjc (° C / W): Thermal resistance of semiconductor package
k: heat transfer coefficient
t: Time That is, when it is determined from the semiconductor package surface temperature that the semiconductor junction has reached a predetermined temperature, it is necessary to wait for the time required for heat transfer from the semiconductor junction to the semiconductor package surface.

  The present invention has been made in order to solve the above-mentioned problem, and it is determined early that the semiconductor junction temperature has reached the operation guarantee lower limit temperature from a low temperature lower than the operation guarantee lower limit temperature, and normal startup is performed. It is to provide a semiconductor system, a startup method, and a program that can be performed quickly.

In order to achieve the above object, a semiconductor system according to the present invention comprises the following arrangement. That is,
A semiconductor system comprising an electrical substrate and a semiconductor bonded to the electrical substrate,
Temperature measuring means for measuring the package surface temperature of the semiconductor;
Power supply means for supplying power to the semiconductor;
Restart determination means for determining whether or not the semiconductor can be restarted based on the measurement result of the temperature measurement means;
When the package surface temperature before supplying the power is lower than a first temperature as a result of the measurement by the temperature measuring unit, the restart determining unit is configured to supply the power of the package surface temperature after supplying the power. When the rise from the package surface temperature before supply exceeds a predetermined temperature , the semiconductor is restarted.

  According to the present invention, when the semiconductor junction temperature is a low temperature lower than the operation guarantee lower limit temperature, it can be quickly determined that the operation guarantee lower limit temperature has been reached, and the normal operation can be started earlier.

It is a block diagram which shows the system of Embodiment 1 of this invention. It is a flowchart which shows the process of the restart determination part of Embodiment 1 of this invention. It is a block diagram which shows the system of Embodiment 2 of this invention. It is a flowchart which shows the process of the restart determination part of Embodiment 2 of this invention. It is a figure which shows the relationship between semiconductor junction part temperature and package surface temperature.

  Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.

<Embodiment 1>
FIG. 1 is a block diagram showing a semiconductor system according to Embodiment 1 of the present invention.

  In FIG. 1, 101 is a semiconductor. A power supply unit 102 is supplied to the semiconductor 101. A switch 103 controls the supply of the power supply unit 102 to the semiconductor 101. The power supply unit 102 and the switch 103 constitute a power supply unit. Reference numeral 104 denotes a temperature detection element for temperature measurement, which includes a thermocouple, a thermistor, a semiconductor temperature sensor, and the like. Reference numeral 105 denotes a temperature measurement unit that receives a signal from the temperature detection element 104 and measures the temperature at the measurement location. The temperature detection unit 104 and the temperature measurement unit 105 constitute a temperature measurement unit. Reference numeral 106 denotes a restart determination unit that determines whether the semiconductor can be restarted based on the temperature measured by the temperature measurement unit 105, and controls the switch 103 according to a predetermined control flow based on the determination result. The power supply to the semiconductor 101 is controlled.

  The restart determination unit 106 is realized by a CPU for controlling various components of the semiconductor system, a ROM for storing various programs related to the semiconductor system, a ROM for developing and executing programs read from the ROM, and the like. Is done. The restart determination unit 106 can also be realized based on dedicated hardware, software, or a combination thereof.

  The operation of the semiconductor system of the first embodiment will be described according to the restart flowchart of the restart determination unit in FIG. In the first embodiment, the guaranteed operating temperature of the semiconductor 101 (or IC) is −10 ° C. to + 85 ° C., and the guaranteed minimum operating temperature is −10 ° C. (first temperature). Moreover, the symbol in a figure has shown the following.

Tc (° C.): Surface temperature of the semiconductor package ΔTc (° C.): Temperature rise value for determining that the junction temperature Tj has risen when power is supplied to the semiconductor Tc_NoPower (° C./W): Power supply to the semiconductor Previous Tc
First, before supplying power to the semiconductor 101, the package surface temperature (hereinafter, Tc) of the semiconductor 101 is measured by the temperature measuring unit 105 (step S201). When Tc is equal to or higher than the “first temperature (−10 ° C. of the minimum guaranteed operating temperature)”, the junction temperature (hereinafter referred to as Tj) of the semiconductor 101 is also equal to or higher than −10 ° C., and the semiconductor 101 already operates normally. It is in a temperature state that can be. Therefore, the restart determination unit 106 turns on the switch 103 to supply power to the semiconductor 101 and energizes the semiconductor 101 (step S202). As a result, power is supplied from the power supply unit 102 to the semiconductor 101, and the semiconductor 101 performs normal operation (step S203).

  On the other hand, when Tc is lower than “first temperature (−10 ° C. of the minimum guaranteed operating temperature)”, Tc of the semiconductor 101 before power supply is temporarily held as Tc_NoPower (step S204). Next, in order to supply power to the semiconductor 101, the switch 103 is turned on to energize the semiconductor 101 (step S205). Power is consumed at the junction of the semiconductor 101 to which power is supplied, and the temperature of Tj rises rapidly. The temperature saturation of Tj takes less than 1 second. However, Tc gradually increases with a delay of the transmission time of the package material having low thermal conductivity between the junction and the package surface of the semiconductor 101. This will be described with reference to FIG. The curve of Tc in FIG. 5B increases according to the following relational expression.

Tc = (T1-T2-P * [theta] jc) (1-exp- ^kt ) + T2
T1 (° C.): Saturation temperature of semiconductor junction (here, −2 ° C.)
T2 (° C.): Semiconductor ambient temperature (here, −30 ° C.)
P (W): Semiconductor power loss (here, 0.5 W)
θjc (° C./W): Thermal resistance of semiconductor package (30 ° C./W)
k: heat transfer coefficient
t: Time T2 = Tj = Tc = -30 [deg.] C. before supplying power to the semiconductor 101 in an environment where the semiconductor ambient temperature is -30 [deg.] C. When P = 0.5 W and θjc = 30 ° C./W, Pxθjc = 15 ° C. In addition, it is known from the result of the preliminary examination that Tj increases by 28 ° C. by supplying power to the semiconductor 101 (ΔTj = difference in saturation value of Tc before and after power supply). T1 = − 2 ° C. (= T2 + ΔTj). That is, by supplying power to the semiconductor 101, Tj rises from −30 ° C., which is lower than the guaranteed operating temperature, to −2 ° C., which is the guaranteed operating temperature, in less than one second. At this point, normal operation can be performed by restarting the semiconductor 101.

  However, in the conventional method, it has been necessary to wait for time t1 until Tc = −25 ° C. (= minimum operation guarantee temperature (−10 ° C.) − Pxθjc). This time corresponds to several minutes to several tens of minutes. In order to eliminate this waiting time and to make normal operation of the semiconductor 101 as fast as possible, when Tc rises by a predetermined temperature ΔTc from the temperature before power supply (Tc_NoPower) (YES in step S206), Tj becomes the minimum guaranteed operating temperature. Judge that you have reached. In this case, in order to supply power again to the semiconductor 101 (re-supply), the switch 103 is once turned off and then turned on again (step S207). That is, the semiconductor 101 is restarted. Thereafter, the semiconductor 101 can continue normal operation as it is (step S203).

  Although it is conceivable to restart the semiconductor regardless of Tc after supplying the power, it is performed after confirming that the semiconductor has generated heat. The predetermined temperature ΔTc is a constant, and is set to 2 ° C. in the first embodiment. This is to confirm that heat has been generated as described above. As another embodiment, it is conceivable to set ΔTc to 2 ° C. or lower. However, considering an AD conversion error in temperature detection, etc., about 2 ° C. is an appropriate value.

  As described above, according to the first embodiment, when the surface temperature of the semiconductor package rises from the temperature before power supply (Tc_NoPower) by a predetermined temperature ΔTc that can be regarded as reaching the guaranteed operating temperature, the junction temperature Tj Is determined to have reached the minimum guaranteed operating temperature. Thereby, the semiconductor can be started earlier than before the surface temperature of the semiconductor package reaches the minimum guaranteed operating temperature.

<Embodiment 2>
FIG. 3 is a block diagram showing the semiconductor system of the second embodiment.

  In FIG. 3, reference numerals 101 to 106 are the same components as those in FIG. 3, in addition to the configuration of FIG. 1, an external heater 301 for heating the semiconductor and a fan 302 for sending the heat of the external heater 301 to the semiconductor 101 are provided.

  The operation of the semiconductor system of the second embodiment will be described according to the restart flowchart of the restart determination unit in FIG. In the second embodiment, the guaranteed operating temperature of the semiconductor 101 (or IC) is −10 ° C. to + 85 ° C., and the minimum guaranteed operating temperature is −10 ° C. (first temperature). Moreover, the symbol in a figure has shown the following.

Tc (° C.): Surface temperature of the semiconductor package ΔTc (° C.): Temperature rise value for determining that the junction temperature Tj has risen when power is supplied to the semiconductor Tc_NoPower (° C./W): Power supply to the semiconductor Previous Tc
ΔTj (° C.): Temperature rise value at Tj caused by energizing the semiconductor (for example, 28 ° C.)
P (W): Semiconductor power loss (for example, 0.5 W)
θjc (° C./W): Thermal resistance of semiconductor package (for example, 30 ° C./W)
Pxθjc (° C.): Temperature difference between saturated Tc and Tj First, the temperature measuring unit 105 measures the package surface temperature Tc of the semiconductor 101 before supplying power to the semiconductor 101 (step S401). When Tc is equal to or higher than the “first temperature (−10 ° C. of the minimum guaranteed operating temperature)”, the junction temperature Tj of the semiconductor 101 is also equal to or higher than −10 ° C., and the semiconductor 101 is already in a temperature state where it can operate normally. is there. Therefore, the restart determination unit 106 turns on the switch 103 to supply power to the semiconductor 101 and energizes the semiconductor 101 (step S402). As a result, power is supplied from the power supply unit 102 to the semiconductor 101, and the semiconductor 101 performs normal operation (step S403).

  On the other hand, when Tc is lower than the “first temperature” and higher than the “second temperature”, the operations in steps S404 to S407 are executed. This operation is the same as steps S204 to S207 in the flowchart of FIG.

  Here, the first temperature is, for example, the minimum guaranteed operating temperature of −10 ° C.

  The second temperature is the minimum guaranteed operating temperature (−10 ° C.) − ΔTj (the temperature rise at the junction that rises when power is supplied to the semiconductor = the saturation temperature of the semiconductor surface before and after the power is supplied). Difference value (difference temperature)).

  When Tc is equal to or less than “second temperature (minimum operation guarantee temperature (−10 ° C.) − ΔTj)”, the junction is kept at the minimum operation guarantee temperature even when the power is supplied to the semiconductor 101 and the junction temperature Tj rises. Does not reach -10 ° C. At this time, it is necessary to increase the ambient temperature of the semiconductor 101 using the external heater 301 and the fan 302.

The ambient temperature at which the junction temperature reaches the minimum guaranteed operating temperature (−10 ° C.) when power is supplied to the semiconductor 101 is “third temperature (minimum operating guaranteed temperature (−10 ° C.) − ΔTj (28 ° C.) + Pxθjc ( 15 ° C.))]. Pxθjc is a difference value (difference temperature) of the saturation temperature between the junction and the semiconductor package surface, which is calculated by the product of the power (P) consumed at the junction of the semiconductor 101 and the thermal resistance (θjc) of the semiconductor package. .

  In the case of heating with the external heater 301, Tj is increased by heating from the outside of the semiconductor 101, so that the temperature difference of Pxθjc is added. That is, the external heater 301 and the fan 302 are turned on (step S408). When Tc becomes higher than “third temperature (minimum operation guaranteed temperature (−10 ° C.) − ΔTj + Pxθjc)” (YES in step S409), power is supplied to the semiconductor 101 (step S410). Since the junction can reach the minimum guaranteed operating temperature (−10 ° C.) by supplying power, the semiconductor 101 can continue normal operation as it is.

  Thereafter, when Tc reaches “minimum operation guaranteed temperature (−10 ° C.) − Pxθjc” (YES in step S411), the external heater 301 and the fan 302 are turned off (step S412). Thereafter, normal operation is continued (step S403).

  The predetermined temperature ΔTc is set to 2 ° C. as in the first embodiment. As another embodiment, it is conceivable to set ΔTc to 2 ° C. or less. However, considering an AD conversion error in temperature detection, about 2 ° C. is an appropriate value. In step S409, when Tc becomes higher than “third temperature (minimum operation guaranteed temperature (−10 ° C.) − ΔTj + Pxθjc)”, Tj is originally “minimum operation guaranteed temperature ( −10 ° C.) − ΔTj ”must be reached. However, Embodiment 2 does not incorporate this time.

  This is because it is assumed that the temperature rise by the external heater 301 is gradually performed, so that the package surface and the bonding portion of the semiconductor 101 are controlled to be heated almost simultaneously. If there is a difference between the package surface of the semiconductor 101 and the method of warming the junction due to external heating, this heat transfer time is waited. This waiting time is calculated in advance examination of the system. In step S412, the external heater 301 is turned off, so that if the ambient temperature continues to be low, Tc will eventually fall below "minimum operation guaranteed temperature (-10 ° C) -Pxθjc". At this time, it is necessary to separately control the external heater 301 and the fan 302 to turn on again.

  Furthermore, the junction temperature of the semiconductor 101 that was initially “first temperature (minimum operation guarantee temperature (−10 ° C.))” is changed to “first temperature (minimum operation guarantee temperature ( −10 ° C.)) ”or less. At this time, this is detected in advance from the temperature of Tc, and the external heater 301 is separately controlled.

  In the second embodiment, an external heater and a fan are described as external devices for heating the semiconductor. However, the present invention is not limited to this, and any external heating unit for heating the semiconductor, such as a Peltier element, hot water circulation, or light irradiation, may be used.

  As described above, in the second embodiment, when the semiconductor 101 is restarted, the power is supplied again (re-supplied). May be.

  Furthermore, although the semiconductor package surface temperature Tc is measured for the determination of the junction temperature Tj of the semiconductor 101, the present invention is not limited to this. For example, the temperature is not limited to the surface temperature Tc of the semiconductor package as long as it is the substrate temperature at a location (position) on the electric substrate that has a temperature correlation with the junction temperature Tj of the semiconductor 101. For example, there is the surface temperature of the electric substrate directly under the semiconductor 101. In addition, the surface temperature of the electric substrate at a position (for example, 1 mm) that is a specified distance away from the end of the semiconductor 101, or the surface directly behind the electric substrate on which the semiconductor 101 is mounted (the back surface of the semiconductor 101) Even for temperature, it is only necessary to obtain a temperature correlation in advance.

  In addition, when the measured temperature changes sensitively due to ambient noise, the sensitivity of the temperature detection element, the speed of the measurement interval, etc., the measured temperature is not used as it is for determination, but for a certain period of time in the past. It is recommended to use a value smoothed by taking an average of measured values.

  As described above, according to the second embodiment, in addition to the effects described in the first embodiment, an external external heating unit (external heater and fan) can be used faster depending on the environmental temperature. Can be started.

  Although the present invention has been described in detail based on preferred embodiments thereof, the present invention is not limited to these specific embodiments, and various forms within the scope of the present invention are also included in the present invention. .

  The present invention can also be realized by executing the following processing. That is, software (program) that realizes the functions of the above-described embodiments is supplied to a system or apparatus via a network or various storage media, and a computer (or CPU, MPU, or the like) of the system or apparatus reads the program. It is a process to be executed.

Claims (9)

A semiconductor system comprising an electrical substrate and a semiconductor bonded to the electrical substrate,
Temperature measuring means for measuring the package surface temperature of the semiconductor;
Power supply means for supplying power to the semiconductor;
Restart determination means for determining whether or not the semiconductor can be restarted based on the measurement result of the temperature measurement means;
Said restart determination means, the result of the measurement of the temperature measuring means, when the package surface temperature before supply is lower than the first temperature to the power supply, after supplying the power, of the package surface temperature, said power supply A semiconductor system characterized in that the semiconductor is restarted when the rise from the package surface temperature before supply exceeds a predetermined temperature. A semiconductor system comprising an electrical substrate and a semiconductor bonded to the electrical substrate,
Temperature measuring means for measuring the package surface temperature of the semiconductor;
Power supply means for supplying power to the semiconductor;
Based on the measurement result of the temperature measurement means, a restart determination means for determining whether or not the semiconductor can be restarted;
An external heating means for heating the semiconductor from the outside,
The restart determination means is a result of measurement by the temperature measurement means,
When the package surface temperature before supplying the power is between the first temperature and the second temperature, by supplying the power, supplied after supplying the power, of the package surface temperature, the power supply Restart the semiconductor when the rise from the previous package surface temperature exceeds a predetermined temperature,
When the package surface temperature before supplying the power is lower than said second temperature, said external heating means is operated, the power supply to the semiconductor when the package surface temperature is higher than the third temperature A semiconductor system characterized by being supplied . Wherein the first temperature is a semiconductor system according to claim 1 or 2, wherein the the lowest operating temperature semiconductor. The semiconductor system according to any one of claims 1 to 3 , wherein the restart of the semiconductor by the restart determination unit is executed by resupply of power to the semiconductor. The restart by the semiconductor restart determination means, the semiconductor system according to any one of claims 1 to 3, characterized in that it is performed by the re-supply of the reset signal to the reset terminal of the semiconductor comprises . The temperature measuring means replaces the measurement of the package surface temperature of the semiconductor with the substrate temperature at a specified position on the electric substrate, which is correlated with the temperature of the junction between the semiconductor and the electric substrate, semiconductor system according to any one of claims 1 to 5, characterized in that measuring a semiconductor package surface temperature. An activation method for activating a semiconductor system comprising an electrical substrate and a semiconductor bonded to the electrical substrate,
A temperature measuring step for measuring the surface temperature of the semiconductor package;
A power supply step for supplying power to the semiconductor;
Based on the measurement result of the temperature measurement step, a restart determination step of determining whether the semiconductor can be restarted, and
The restart determining step, said temperature measuring step results of the measurement of, in case the package surface temperature before supplying the power is lower than the first temperature, after supplying the power, of the package surface temperature, said power supply A start-up method characterized in that the semiconductor is restarted when the rise from the package surface temperature before supply exceeds a predetermined temperature. An activation method for activating a semiconductor system comprising an electrical substrate and a semiconductor bonded to the electrical substrate,
A temperature measuring step for measuring the surface temperature of the semiconductor package;
A power supply step for supplying power to the semiconductor;
Based on the measurement result of the temperature measurement step, a restart determination step of determining whether the semiconductor can be restarted,
An external heating step of heating the semiconductor from the outside,
The restart determination step is a measurement result of the temperature measurement step,
When the package surface temperature before supplying the power is between the first temperature and the second temperature, by supplying the power, supplied after supplying the power, of the package surface temperature, the power supply Restart the semiconductor when the rise from the previous package surface temperature exceeds a predetermined temperature,
When the package surface temperature before supplying the power is lower than said second temperature, said external heating step is operated, the power supply to the semiconductor when the package surface temperature is higher than the third temperature A start-up method characterized in that a supply is provided . The program for functioning a computer as a semiconductor system in any one of Claims 1 thru | or 6 .

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