JP5845320B2 - Semiconductor light emitting device - Google Patents

Description

  The present invention relates to a configuration of a semiconductor light emitting device, and more particularly to an improvement of a mounting substrate that prevents deterioration of a reflective layer.

  In recent years, a light-emitting diode (hereinafter abbreviated as LED) is a semiconductor light-emitting element, so it has a long life and excellent driving characteristics, is small in size, has high luminous efficiency, and has a bright emission color. It has come to be widely used for backlights and lighting of display devices. Also in this embodiment, an LED light emitting device will be described as an example as a semiconductor light emitting device.

  In particular, in recent years, there has been a demand for miniaturization of parts to be mounted on portable devices such as mobile phones and high luminous efficiency, and the mounting structure of the LED light emitting device incorporated in the portable device is also miniaturized and high luminous efficiency. There is a strong demand. As a result, there has been proposed a mounting structure in which an Ag plating layer having a good reflection efficiency and an Au plating layer having a good solderability are used as a mounting structure of an LED light emitting device (for example, cited reference 1, cited reference 2, cited). Reference 3).

  Hereinafter, the conventional LED light emitting device described in the cited document 1 will be described. 10A and 10B show the LED light emitting device 100 described in the cited document 1, wherein FIG. 10A is a cross-sectional view of the LED light emitting device 100, and FIG.

  10A, in the LED light emitting device 100, a die bonding electrode 103 and a wire bonding electrode 104 are formed on the upper surface of the mounting substrate 102, and the die bonding electrode 103 and the wire bonding electrode 104 are mounted on the mounting substrate, respectively. Base electrodes 103a and 104a formed by etching the copper foil attached to 102 are formed (indicated by dotted lines in FIG. 10B). Plated electrodes 103b and 104b are formed on the surfaces of the base electrodes 103a and 104a, and the plated electrode portions are Ni / Au plated layers or Ni / Ag plated layers.

In the state where the plated electrode portions 103 b and 104 b are exposed, the upper surface of the mounting substrate 102 including the base electrodes 103 a and 104 a is all covered with the coating resin 105. Further, the die bonding electrode 103 and the wire bonding electrode 104 form output electrodes 103d and 104d on the back surface side of the mounting substrate 102 through the through holes 103c and 104c.
Note that the through holes 103c and 104c in FIG. 10A are cut at the center positions of the through holes 103c and 104c in FIG. 10B.

  The LED 1 is mounted on the plating electrode portion 103 b of the die bonding electrode 103, and is connected to a part of the plating electrode portion 103 b and the plating electrode portion 104 b of the wire bonding electrode 104 by wires 7. The upper surface of the mounting substrate 102 on which the LED 1 is mounted is sealed with a sealing resin 8 such as a transparent resin or a fluorescent resin.

  That is, in the LED light emitting device 100, the light emission of the LED 1 is reflected by the plated electrode portion made of the Ni / Au plated layer or the Ni / Ag plated layer to increase the luminous efficiency.

Next, the conventional LED light emitting device described in the cited document 2 will be described. The head 11 shows the LED light emitting device 200 described in the cited document 2, and (a) shows the LED light emitting device 200.
(B), (c) shows a cross-sectional view of the mounting description 202.

  In FIG. 11A, the LED light emitting device 200 has a die bonding electrode 203 and a wire bonding electrode 204 formed on the upper surface of the mounting substrate 202. The die bonding electrode 203 and the wire bonding electrode 204 are mounted on the mounting substrate, respectively. Base electrodes 203a and 204a are formed by etching the copper foil attached to 202. Plated electrodes 203b and 204b are formed on the surfaces of the base electrodes 203a and 204a, and the plated electrode portions are Ni / Ag plated layers. The plated electrodes 203b and 204b have a function as a wiring conductor and a function as a reflection layer that reflects light emitted from the LED.

  In the state where the plated electrode portions 203b and 204b are exposed, the upper surfaces of the base electrodes 203a and 204a are all covered with the coating resin 205. Further, the die bonding electrode 203 and the wire bonding electrode 204 form output electrodes 203d and 204d on the back surface side of the mounting substrate 202 via the side electrodes 203c and 204c.

The LED 1 is fixed to the plating electrode portion 203 b of the die bonding electrode 203 with a die bonding paste or the like, and is connected to a part of the plating electrode portion 203 b and the plating electrode portion 204 b of the wire bonding electrode 204 by the wire 7. Further, on the upper surface of the mounting substrate 202 on which the LED 1 is mounted, a SiO ₂ film 206 is formed as a protective layer for the plating electrode so as to cover all of the plating electrodes 203b and 204b.

  Further, a reflective frame 208 is provided on the coating resin 205, and the inside of the reflective frame 208 is filled with a sealing resin 8 such as a transparent resin or a fluorescent resin.

Next, a method for forming the SiO ₂ film 206 on the upper surface of the mounting substrate 202 will be described with reference to FIGS. FIG. 11 (b) shows a state of dropping the SiO ₂ solution 206a by dropper 300 on the upper surface of the mounting substrate 202 has been completed in FIG. 11 (a), the the dripped SiO ₂ solution 206a is 11 As shown in FIG. 3C, it is applied to the entire inner surface of the frame-shaped coating resin 205 and cured by heat treatment to form a protective layer for the plated electrode as the SiO ₂ film 206. In the above method, the SiO ₂ film 206 is processed after the mounting substrate 202 is completed and before the reflection frame 208 is fixed. However, the SiO ₂ film 206 may be processed after the reflection frame 208 is fixed.

That is, in the LED light emitting device 200, the light emission of the LED 1 is reflected by the plating electrode 203b of the Ag plating layer to increase the light emission efficiency, and the SiO ₂ film 206 is further processed on the Ag plating layer. Therefore, it is intended to prevent corrosion of the Ag plating layer and decrease in reflectance.

  Next, a conventional LED light emitting device described in the cited document 3 will be described. Although not shown, the LED light-emitting device described in the cited document 3 has a die-bonding electrode and a wire-bonding electrode formed on the upper surface of the mounting substrate, similarly to the LED light-emitting device 200 described in the cited document 2. Each of the die bonding electrode and the wire bonding electrode has a base electrode formed by etching a copper foil attached to a mounting substrate. A first-layer plating electrode is formed on the surface of the base electrode, and this plating electrode portion is an Ag plating layer. The plated electrode of the first layer has a function as a wiring conductor and a function as a reflection layer that reflects light emitted from the LED.

Further, a metal layer (for example, Au) different from Ag of the first layer as a second metal plating layer is formed on the surface of the Ag plating layer, which is the first layer plating electrode, at least one of the surfaces of the Ag layer. A third layer protective film (eg, SiO ₂ ) is formed so as to cover the surface of the first Ag plating layer and the second layer formed sparsely so that the portion is exposed. .

The cited document 3 is provided in order to improve the adhesion between the first Ag layer and the third SiO ₂ layer as a function of the _second layer. The reflection characteristics of the first Ag layer are as follows. It is desirable to form the sparsely so as to increase the exposure of the surface of the Ag layer as much as possible so as not to inhibit it.
The electrical connection between the semiconductor light emitting element and the substrate electrode is preferably performed by wire bonding the electrode of the semiconductor light emitting element and the region where the first Ag layer on the substrate is exposed.

That is, the LED light emitting device in the cited document 3 is also intended to increase the light emission efficiency by reflecting the light emission of the LED by the plating electrode by the Ag plating layer, similarly to the LED light emitting device 200 in the cited document 2. By processing the SiO ₂ film on the plating layer, an attempt is made to prevent corrosion of the Ag plating layer and a decrease in reflectance.

JP 2005-197479 A JP 2009-224536 A JP 2008-72013 A

Next, problems of the LED light emitting device 100 shown in the cited document 1 will be described.
First, since the plating electrodes 103b and 104b on the mounting substrate 102 of the LED light emitting device 100 are exposed on the mounting substrate 102, when an Ag plating layer having excellent reflection characteristics is employed, the corrosion or reflectance of the Ag plating layer is reduced. There is a problem that the reduction is severe and the luminous efficiency cannot be increased.

Next, problems of the LED light emitting device 200 shown in the cited document 2 will be described.
The plating electrodes 103b and 104b in the Ag plating layer on the mounting substrate 202 of the LED light emitting device 200 have excellent reflection characteristics and are covered with a SiO ₂ film. Although it is an excellent configuration with little corrosion and lowering of reflectance, it still has problems.

That is, as shown in FIG. 11, the LED light emitting device 200 is formed by forming the plating electrodes 103b and 104b in the Ag plating layer on the mounting substrate 202, fixing the LED 1 to the plating electrode portion 203b of the die bonding electrode 203 with a die bonding paste, etc. 7 is connected to a part of the plating electrode part 203 b and the plating electrode part 204 b of the wire bonding electrode 204. After this series of LED mounting steps is completed, a SiO ₂ liquid 206 is dropped on the mounting substrate 202 as shown in FIGS. 11B and 11C, and a SiO ₂ film 206 is formed by heat treatment.

But since the implementation of the LED1 is completed, no protective effect of the SiO ₂ film 206 is obtained for sufficient Ag plating layer in the method of forming the SiO ₂ film 206. That is, since the SiO ₂ film 206 does not exist at the bottom of the IED 1 and the LED 1 is fixed to the plating electrode portion 203b of the die bonding electrode 203 by a die bonding paste or the like, the Ag plating layer is passed through an adhesive such as the die bonding paste. As a result of the progress of corrosion and a decrease in reflectance, the protection effect of the SiO ₂ film 206 on the complete Ag plating layer cannot be expected, although the degree is better than that of the LED light emitting device 100.
Furthermore, since the SiO ₂ liquid 206a dropped after the LED 1 is mounted on the mounting substrate 202 directly adheres to the LED 1, there is a risk of adversely affecting the light emission characteristics of the LED 1, which is not desirable.

Next, problems of the LED light emitting device shown in the cited document 3 will be described.
The LED light-emitting device of the cited document 3 has an advantage that the reflection characteristic of the Ag layer is good because the plating electrode in the Ag plating layer on the mounting substrate is excellent in the reflection characteristic and is covered with the SiO ₂ film. However, after fixing the LED to the plating electrode part of the die bonding electrode with a paste or the like and connecting a part of the plating electrode part and the plating electrode part of the wire bonding electrode with a wire, the SiO ₂ liquid is dropped on the mounting substrate. Since the SiO ₂ film is formed by the heat treatment, there is a problem that the protective effect of the SiO ₂ film against the sufficient Ag plating layer cannot be obtained, which is the same as in the cited document 2.

Further, in the case of the LED light emitting device of the cited document 3, since the second Au layer is formed sparsely between the first Ag plating layer and the third SiO ₂ layer, the first layer There is a problem that the Au layer formed sparsely in the second layer obstructs the reflection characteristics of the Ag layer, hindering the reflection efficiency of the LED, and also in the wire bonding area on the surface of the Ag plating layer of the first layer, There is a problem that bonding characteristics are also deteriorated because the second Au layer is formed sparsely.

The object of the present invention is to solve the above-mentioned problems, and in accordance with the demand for higher luminous efficiency and improved productivity of LED light-emitting devices, an Ag plating layer having excellent reflectivity and connectivity to the mounting substrate. It is to provide a semiconductor light emitting device that uses an excellent Au plating layer and that can sufficiently exhibit the protective effect of the SiO ₂ film.

Configuration of LED light-emitting device in the present invention for achieving the above object, a die bonding electrode on a mounting substrate and a wire bonding electrode, in the semiconductor light emitting device mounted with a semiconductor light-emitting element, on the mounting substrate The formed Ni plating layer, the Au plating layer formed on the upper surface side of the Ni plating layer, the Ag plating layer formed on the upper surface side of the Au plating layer, and further formed on the Ag plating layer And a laminated structure of an SiO ₂ film having an opening serving as a wire bond region between the die bond electrode and the wire bond electrode, and the semiconductor light emitting element is formed on the SiO ₂ film coated on the Ag plating layer. are die-bonded, the electrodes of the semiconductor light emitting device characterized by being wire-bonded to Au plating layer exposed in the opening of the SiO ₂ film To.

According to the above configuration, most of the upper surface of the mounting substrate is composed of an Ag plating layer having excellent reflectivity, and an Au plating layer is formed in the wire bond region, and only the wire bond region of the Au plating layer is exposed. , coated with fully SiO ₂ film Ag plating layer, and by fixing the LED on the SiO ₂ film, it is possible to provide a semiconductor light emitting device capable of sufficiently exhibit the protective effect of the SiO ₂ film.

Ni plating layer formed on the mounting substrate, Au plating layer formed on the upper surface side of the Ni plating layer, Ag plating layer formed on the upper surface side of the Au plating layer, and further the Ag plating layer form a layered structure of the SiO ₂ film formed on the Ag plating layer and on the bottom of an opening formed in a portion of the SiO ₂ film to expose the Au plating layer, electrode said wire bond and a part of the die bonding electrode may wire bonding region is formed.

Ni plating layer formed on the mounting substrate, Au plating layer formed on the upper surface side of the Ni plating layer, Ag plating layer formed on the upper surface side of the Au plating layer, and further the Ag plating layer form a layered structure of the SiO ₂ film formed on the on the bottom of an opening formed in a part of the SiO ₂ film, exposure of Au plating layer formed by plating on the Ag plating layer electrode A wire bond region may be formed in a part of the wire bond electrode and the die bond electrode by an electrode made of the Au plating layer.

It is sectional drawing which shows the structure of the LED light-emitting device in 1st Embodiment of this invention. It is a top view of the mounting board | substrate in the LED light-emitting device shown in FIG. It is a reverse view of the mounting board | substrate in the LED light-emitting device shown in FIG. It is process drawing which shows the manufacturing method of the semiconductor light-emitting device mounting substrate in 1st Embodiment of this invention. It is process drawing which shows the manufacturing method of the semiconductor light-emitting device mounting substrate in 2nd Embodiment of this invention. It is process drawing which shows the manufacturing method of the semiconductor light-emitting device mounting substrate in 3rd Embodiment of this invention. It is process drawing which shows the manufacturing method of the semiconductor light-emitting device mounting substrate in 4th Embodiment of this invention. It is process drawing which shows the manufacturing method of the semiconductor light-emitting device mounting substrate in 5th Embodiment of this invention. It is process drawing which shows the manufacturing method of the semiconductor light-emitting device mounting substrate in 6th Embodiment of this invention. The structure of the LED light-emitting device in a prior art is shown, (a) is sectional drawing, (b) is a top view of a mounting substrate. Shows the configuration of the LED light-emitting device in the prior art, (a) shows the cross sectional view and a cross-sectional view showing a (b) (c) is shaped formation of the SiO ₂ film on the mounting substrate.

(Description of the first embodiment)
Embodiments of the present invention will be described below with reference to the drawings. 1 to 3 show a first embodiment of the present invention, FIG. 1 is a sectional view of an LED light emitting device 10 of the present invention, FIG. 2 is a top view of a mounting board 2 shown in FIG. 1, and FIG. It is a back view of the mounting substrate 2 shown.

  In FIG. 1, the LED light emitting device 10 has a die bonding electrode 3 and a wire bonding electrode 4 formed on the upper surface of the mounting substrate 2, and the die bonding electrode 3 and the wire bonding electrode 4 are attached to the mounting substrate 2, respectively. Base electrodes 3a and 4a formed by etching the copper foil thus formed are formed. Ni plating layers 3b and 4b are formed as plating electrodes on the surfaces of the base electrodes 3a and 4a, and Au plating layers 3c and 4c are formed on the upper surfaces thereof.

In addition, an Ag plating layer is formed except for the openings 3w and 4w in the wire bond region, and the SiO ₂ film 6 is covered on the entire upper surface of the mounting substrate 2 except for the openings 3cw and 4cw. Note that the openings 3w and 4w in the wire bond region are formed in part of the die bond electrode 3 and the wire bond electrode 4, respectively. Further, output electrodes 3e and 4e are provided on the back surface side of the mounting substrate 2 by base electrodes 3a and 4a, Ni plating layers 3b and 4b, and Au plating layers 3c and 4c, and are electrically connected through through holes 3f and 4f indicated by dotted lines. However, since it is not directly related to the gist of the present application, details are omitted.

The above is the completed state of the mounting substrate 2, and the LED 1 is fixed to the upper surface of the die bonding electrode 3 of the mounting substrate 2 on which the Ag plating layer 3 d is coated with the SiO ₂ film with an adhesive such as a die bonding paste. The Au plating layers 3 c and 4 c exposed at the opening portions 3 w and 4 w in the region are wire-bonded by wires 7. Furthermore, the LED light emitting device 10 is completed by sealing the upper surface of the mounting substrate 2 including the LED 1 and the wire 7 with the sealing resin 8.

FIG. 2 is a top view of the mounting substrate 2 and shows the position and shape of each electrode pattern. That is, the thin dotted lines indicate the base electrodes 3a and 4a, and the thick dotted lines indicate the plating electrodes constituted by the Ni plating layers 3b and 4b, the Au plating layers 3c and 4c, and the Ag plating layers 3d and 4d. In the Ag plating layers 3d and 4d formed on the uppermost layer of the electrode, openings 3w and 4w in the wire bond region are formed, and the Au plating layers 3c and 4c are exposed. The SiO ₂ film shown in satin finish is opening 3w, except 4w, and covers the entire surface including the fixing surface of the LED1.

  FIG. 3 is a rear view of the mounting substrate 2. Output electrodes 3 e and 4 e are formed at both ends, and the die bonding electrode 3 and the wire bonding electrode 4 on the upper surface of the mounting substrate 2 are formed by the aforementioned through holes 3 f and 4 f. It is connected.

Next, assembly and light emission characteristics of the LED light emitting device 10 will be described.
First, as the mounting substrate 2, at least the surface of the die bonding electrode 3 for fixing the LED 1 is coated with a highly protective SiO ₂ film on an Ag plating layer having excellent reflectivity. It is possible to provide a long-lasting LED light-emitting device that has good light emission characteristics and a long lifetime. In the wire bond region, the Au plating layer is exposed in the openings 3w and 4w, thereby improving the bonding characteristics and making the bonding position easy to understand, thereby facilitating the mounting.

Further, in the LED light emitting device 10 shown in FIG. 1, in the plated electrode formed on the upper surface of the mounting substrate 2, the Au plating layers 3 b and 4 are formed at the outer peripheral corners of the die bonding electrode 3 and the wire bonding electrode 4. In comparison, the lengths of the Ag plating layers 3d and 4d are shortened and the periphery is covered with the SiO ₂ film 6. The reason for this is that when the Ag plating layers 3d and 4d are lengthened and protruded to the outer peripheral corners, This is because there is a risk that the coating is not covered with the SiO ₂ film, and when the Ag plating layer is exposed from a long peripheral corner, corrosion and deterioration of the Ag plating layer are prevented from proceeding from this portion.

  Particularly in the LED light emitting device 10, Au plating layers 3 c, 4 c and Ag plating layers 3 d, 4 d are formed on the die bonding electrode 3 and the wire bonding electrode 4, and a part of the die bonding electrode 3 is formed. Since the wire bonding region where the Au plating layers 3c and 4c are exposed is formed on each of the wire bonding electrodes 4, the upper surface side of the mounting substrate 2 is entirely reflected by the Ag plating layer, and the Au plating is performed. By forming the wire bond region with the layers, it is possible to provide an LED light emitting device that is easy to bond and stable.

(Method for Manufacturing Semiconductor Light Emitting Device Mounting Board in First Embodiment)
Next, an embodiment of a method for manufacturing a semiconductor light emitting device mounting substrate of the present invention will be described.
FIG. 4 is a process diagram showing a first embodiment of a method for manufacturing a semiconductor light emitting device mounting substrate of the present invention, and is a manufacturing process of the mounting substrate 2 in the LED light emitting device 10 shown in FIGS. Therefore, the same members as those of the LED light emitting device 10 shown in FIGS.

  FIG. 4A shows an Au plating layer forming step, in which the Ni plating layer 3b. 4b, Au plating layers 3c and 4c are formed, and a die bonding electrode 3, a wire bonding electrode 4, and output electrodes 3e and 4e are formed. FIG. 4B shows a mask forming process, in which wire bonding regions in the Au plating layers 3c and 4c of the die bonding electrode 3 and the wire bonding electrode 4, the die bonding electrode 3 in which the Ag plating layer is not desired, and the wire bonding Resist masks 9a and 9b are formed at the outer peripheral corners with the electrode 4 for use. Note that the resist mask 9b at the outer corner is not essential, and can be omitted if there is no concern about corrosion of the Ag plating layers 3d and 4d from the outer corner, but by providing this, the Ag plating layer is protected. It is provided to enhance the effect.

  FIG. 4C shows an Ag plating layer forming step. By performing Ag plating only on the upper surface side of the mounting substrate 2, Ag plating layers 3d and 4d are formed on the Au plating layers 3c and 4c excluding the resist masks 9a and 9b. Is formed. FIG. 4D shows a first mask removing process, in which only the resist mask 9 b provided at the outer peripheral corners of the die bonding electrode 3 and the wire bonding electrode 4 is removed. If the resist mask 9b is not formed at the outer peripheral corners of the die-bonding electrode 3 and the wire-bonding electrode 4 in the mask forming step of FIG. 4B, this first mask removing step is not necessary.

FIG. 4E shows a SiO ₂ film formation step, in which a SiO ₂ liquid is dropped on the entire upper surface side of the mounting substrate 2 by means such as a dispenser and overheated to form the SiO ₂ film 6.
FIG. 4F shows a second mask removal step, in which the resist mask 9 a provided in the wire bond region between the die bond electrode 3 and the wire bond electrode 4 is removed. The removal of the resist mask 9a removes part of the Ag plating layers 3d and 4d and the SiO ₂ film, thereby forming openings 3w and 4w in the die bonding electrode 3 and the wire bonding electrode 4. The Au plating layers 3c and 4c exposed on the bottom surfaces of the openings 3w and 4w become wire bond regions.

  FIG. 4G is a cross-sectional view of the LED light emitting device 10 in which the LED 1 is mounted on the mounting substrate 2 configured by the steps of FIGS. 4A to 4F described above, and the LED light emitting device 10 shown in FIG. It is the same configuration.

(Method for Manufacturing Semiconductor Light Emitting Device Mounting Board in Second Embodiment)
Next, a method for manufacturing a semiconductor light emitting device mounting substrate in the second embodiment will be described with reference to FIG.
In the embodiments of the method for manufacturing each semiconductor light emitting device mounting substrate, the basic configuration and process of the mounting substrate 2 uses the same elements as those shown in FIG. In addition, overlapping explanation is omitted. The completed sectional view of the LED light emitting device 10 is the same as the configuration of the LED light emitting device 10 shown in FIG.

FIG. 5A is the same Au plating layer forming process as FIG.
FIG. 5B is an Ag plating layer forming step corresponding to FIG. 4C, but since no resist mask is used, the entire surface of the Au plating layers 3c and 4c of the die bonding electrode 3 and the wire bonding electrode 4 is formed. Ag plating layers 3d and 4d are formed. FIG. 5C shows a SiO ₂ film forming process corresponding to FIG. 4E. The SiO ₂ liquid 6 is dropped on the entire upper surface of the mounting substrate 2 and overheated to form the SiO ₂ film 6. .

FIG. 5D shows a laser processing step, in which openings 3w and 4w are formed by laser processing in the wire bond regions of the die bonding electrode 3 and the wire bonding electrode 4, and wire bonding by the exposed Au plating layers 3c and 4c is performed. Form a region. FIG. 5F is a cross-sectional view of the LED light emitting device 10 in which the LED 1 is mounted on the mounting substrate 2 configured by the steps of FIGS. 5A to 5E, and has the same configuration as the LED light emitting device 10 shown in FIG. It is.
That is, the difference between the manufacturing method of the semiconductor light emitting device mounting substrate in the first embodiment shown in FIG. 4 and the manufacturing method of the semiconductor light emitting device mounting substrate in the second embodiment shown in FIG. Whereas the openings 3w and 4w forming the wire bond region are formed by a resist method using a resist mask, the openings 3w and 4w are formed by laser processing in the manufacturing method of the second embodiment. It was done.

(Method for Manufacturing Semiconductor Light-Emitting Device Mounting Board in Third Embodiment)
Next, a method for manufacturing a semiconductor light emitting device mounting substrate in the third embodiment will be described with reference to FIG.
The third embodiment shown in FIG. 6 is a manufacturing method in the same resist method as that of the first embodiment shown in FIG. 4, and the difference from the first embodiment will be mainly described. FIG. 6A shows the same Au plating layer forming step as that in FIG.
FIG. 6B shows a first mask formation step, in which a resist mask 9b is formed at the outer peripheral corners of the die bonding electrode 3 and the wire bonding electrode 4 where the Ag plating layer is not desired. FIG. 6C shows an Ag plating layer forming process. Ag plating is performed only on the upper surface side of the mounting substrate 2 to form Ag plating layers 3d and 4d on the Au plating layers 3c and 4c excluding the resist mask 9b. Is done.

FIG. 6D is a second mask formation step, in which the resist mask 9b is peeled off, and the resist mask 9a is formed in the wire bond region in the Au plating layers 3c and 4c of the die bonding electrode 3 and the wire bonding electrode 4. Form. FIG. 6E shows a SiO ₂ film forming process, in which a SiO ₂ liquid is dropped on the entire upper surface of the mounting substrate 2 and overheated to form the SiO ₂ film 6. FIG. 6F shows a second mask removing process, in which the resist mask 9 a provided in the wire bond region between the die bonding electrode 3 and the wire bonding electrode 4 is removed. The removal of the resist mask 9a removes part of the Ag plating layers 3d and 4d and the SiO ₂ film, thereby forming openings 3w and 4w in the die bonding electrode 3 and the wire bonding electrode 4. Ag plating layers 3d and 4d are exposed on the bottom surfaces of the openings 3w and 4w. FIG. 6G shows a wire bond electrode forming step, in which a wire bond electrode 9 made of an Au plating layer is formed on the Ag plating layers 3d and 4d exposed on the bottom surfaces of the openings 3w and 4w.

  Comparing the mounting substrate 2 in the third embodiment shown in FIG. 6G with the mounting substrate 2 in the first embodiment shown in FIG. 4F, the mounting substrate 2 in the third embodiment forms a mask. Although the number of steps becomes two steps and the number of steps of plating the wire bond electrode 9 increases, the number of steps is disadvantageous, but the advantage that the reflectance is improved by the increase in the area of the Ag plating layer. Exists.

(Method for Manufacturing Semiconductor Light Emitting Device Mounting Board in Fourth Embodiment)
Next, a method for manufacturing a semiconductor light emitting device mounting substrate in the fourth embodiment will be described with reference to FIG.
The fourth embodiment shown in FIG. 7 is a manufacturing method in the same laser method as that of the second embodiment shown in FIG. 5, and the difference from the second embodiment will be mainly described. The Au plating layer forming process, Ag plating layer forming process, and SiO ₂ film forming process up to FIGS. 7A to 7C are the same as the Au plating layer forming process and Ag plating layer as shown in FIGS. This is the same as the forming process and the SiO ₂ film forming process, and a description thereof will be omitted.

Differs from the method of manufacturing the fourth embodiment and the second embodiment, an opening portion 3w, 4w forming method of the laser processing step, the laser processing step shown in FIG. 5 (d), SiO ₂ by laser processing Whereas openings 3w and 4w are formed in the film 6 and Ag plating layers 3d and 4d, and the Au plating layers 3c and 4c exposed on the bottom surfaces of the openings 3w and 4w are used as wire bond regions, FIG. In the laser processing step shown in FIG. 4, openings 3w and 4w are formed only in the SiO ₂ film 6 by laser processing, and wire bond electrodes 9 are formed on the Ag plating layers 3d and 4d exposed on the bottom surfaces of the openings 3w and 4w. The wire bond region.

(Method for Manufacturing Semiconductor Light Emitting Device Mounting Board in the Fifth Embodiment)
Next, a method for manufacturing a semiconductor light emitting device mounting substrate in the fifth embodiment will be described with reference to FIG.
The fifth embodiment shown in FIG. 8 is a manufacturing method in the same resist method as the first embodiment shown in FIG. 4, and will be described in comparison with the resist method of the first embodiment shown in FIG. FIG. 8A shows an Ag plating layer forming process. On the upper surface of the mounting substrate 2, Ni plating layers 3b and 4b and Ag plating layers 3d and 4d are formed on the patterned base electrodes 3a and 4a to form die bonding electrodes. 3 and wire bonding electrode 4 are formed. On the back side of the mounting substrate 2, Ni plating layers 3b and 4b and Au plating layers 3c and 4c are formed on the base electrodes 3a and 4a, and output electrodes 3e and 4e are formed.

  Here, the manufacturing method of the fifth embodiment is greatly different from the manufacturing method of the first embodiment in the method of forming the die-bonding electrode 3 and the wire-bonding electrode 4. In the manufacturing method of the first embodiment, the method for die-bonding is used. Whereas the electrode 3 and the wire bonding electrode 4 are formed of an Au plating layer, the die bonding electrode 3 and the wire bonding electrode 4 are formed of an Ag plating layer in the manufacturing method of the fifth embodiment. is there. However, the output electrodes 3e and 4e on the back side of the mounting substrate 2 are formed of the same Au plating layer. FIG. 8B shows a mask forming process, in which a resist mask 9a is formed in the wire bond regions in the Ag plating layers 3d and 4d of the die bonding electrode 3 and the wire bonding electrode 4.

FIG. 8C shows an SiO ₂ film forming step, in which an SiO ₂ liquid is dropped on the entire upper surface side of the mounting substrate 2 by means of a dispenser or the like, and overheated to form the SiO ₂ film 6.
FIG. 8D shows a mask removing process, in which the resist mask 9 a provided in the wire bond region between the die bonding electrode 3 and the wire bonding electrode 4 is removed. By removing a part of the SiO ₂ film by removing the resist mask 9a, openings 3w and 4w are formed in the die bonding electrode 3 and the wire bonding electrode 4, and the bottom surfaces of the openings 3w and 4w are formed. The Ag plating layers 3d and 4d are exposed. FIG. 8E shows a wire bond electrode formation step, in which a wire bond electrode 9 made of an Au plating layer is formed on the Ag plating layers 3d and 4d exposed on the bottom surfaces of the openings 3w and 4w.

  The manufacturing method of the semiconductor light emitting device mounting substrate in the fifth embodiment shown in FIG. 8 is different from the manufacturing method of the semiconductor light emitting device mounting substrate in the first embodiment shown in FIG. 4 is formed directly using an Ag plating layer without providing an Au plating layer, so there is an advantage that the cost can be reduced by omitting the Au plating layer. Difficult to manufacture due to the different manufacturing process from the side.

(Method for Manufacturing Semiconductor Light Emitting Device Mounting Board in Sixth Embodiment)
Next, a method for manufacturing a semiconductor light emitting device mounting substrate in the sixth embodiment will be described with reference to FIG.
The sixth embodiment shown in FIG. 9 is obtained by changing the resist method of the fifth embodiment shown in FIG. 8 to laser processing, and will be described in comparison with the fifth embodiment shown in FIG. FIG. 9A is the same as the Ag plating layer forming step in FIG. FIG. 9B shows a SiO ₂ film formation step, in which a SiO ₂ liquid is dropped onto the entire upper surface side of the mounting substrate 2 by means such as a dispenser and overheated to form the SiO ₂ film 6. FIG. 9C shows a laser processing step, and openings 3w and 4w are formed only in the SiO ₂ film 6 by laser processing. FIG. 9D shows a wire bond electrode forming process, in which the wire bond electrode 9 is plated on the Ag plating layers 3d and 4d exposed on the bottom surfaces of the openings 3w and 4w provided in the laser processing process to form a wire bond region. Yes.

As described above, in the present invention, in the LED light-emitting device, an Ag plating layer having good reflectivity is formed on the die bonding electrode, and an Au plating layer having good bonding properties is formed on the wire bonding electrode. Further, the mounting substrate is coated with an Ag plating layer and the Au plating layer is covered with an exposed SiO ₂ film, and the LED is die-bonded on the SiO ₂ film coated on the Ag plating layer. The electrode is formed by wire bonding to the Au plating layer exposed on the SiO ₂ film, thereby prolonging the good reflective life of the Ag plating layer. The method for manufacturing the LED light emitting device mounting substrate is described in each embodiment. As shown, there are various possibilities, depending on the purpose, that is, specifications that require more reliability or specifications that require lower costs. Door can be.

1 LED
2, 102, 202 Mounting substrate 3, 103, 203 Die bonding electrodes 3a, 4a, 103a, 104a Base electrode 203a, 204a Base electrode 3b Ni plating layer 3c, 4c Au plating layer 3d, 4d Ag plating layer
3e, 4e, 103d, 104d output electrode 203d, 204d output electrode 3f, 4f, 103c, 104c through holes 3w, 4w opening 4,104,204 wire bonding electrode 6,206 SiO ₂ film 206a SiO ₂ solution 7 wire 8 Sealing resin 9 Wire bond electrode 10, 100, 200 LED light emitting device 103b, 104b, 203b, 204b Plating electrode 205 Coating resin 208 Reflecting frame 300 Dispenser

Claims (3)

In a semiconductor light-emitting device in which a semiconductor light-emitting element is mounted on a mounting substrate having a die-bonding electrode and a wire-bonding electrode, a Ni plating layer formed on the mounting substrate and an upper surface side of the Ni plating layer The formed Au plating layer, the Ag plating layer formed on the upper surface side of the Au plating layer, and the wire bonding region between the die bonding electrode and the wire bonding electrode formed on the Ag plating layer. The semiconductor light-emitting element is die-bonded on the SiO ₂ film coated on the Ag plating layer, and each electrode of the semiconductor light-emitting element is formed of the SiO ₂ film having an opening. A semiconductor light-emitting device, characterized in that it is wire-bonded to an Au plating layer exposed at _two film openings. Ni plating layer formed on the mounting substrate, Au plating layer formed on the upper surface side of the Ni plating layer, Ag plating layer formed on the upper surface side of the Au plating layer, and further the Ag plating layer form a layered structure of the SiO ₂ film formed on the Ag plating layer and on the bottom of an opening formed in a portion of the SiO ₂ film to expose the Au plating layer, electrode said wire bond the semiconductor light emitting device of some to claim 1, wherein the wire bonding region is formed between the die bonding electrode with. Ni plating layer formed on the mounting substrate, Au plating layer formed on the upper surface side of the Ni plating layer, Ag plating layer formed on the upper surface side of the Au plating layer, and further the Ag plating layer form a layered structure of the SiO ₂ film formed on the on the bottom of an opening formed in a part of the SiO ₂ film, exposure of Au plating layer formed by plating on the Ag plating layer electrode to the by Au plating consisting layer electrode, the semiconductor light emitting device of some to claim 1, wherein the wire bonding region is formed between the wire bonding electrode and the die bonding electrode.

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