JP5876285B2 - RFID tag antenna and manufacturing method thereof - Google Patents
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- 238000004519 manufacturing process Methods 0.000 title claims description 23
- 229910052709 silver Inorganic materials 0.000 claims description 86
- 239000004332 silver Substances 0.000 claims description 86
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 85
- 239000002245 particle Substances 0.000 claims description 66
- 239000000758 substrate Substances 0.000 claims description 19
- 239000006185 dispersion Substances 0.000 claims description 11
- 239000004816 latex Substances 0.000 claims description 8
- 229920000126 latex Polymers 0.000 claims description 8
- 229920002635 polyurethane Polymers 0.000 claims description 8
- 239000004814 polyurethane Substances 0.000 claims description 8
- 239000002562 thickening agent Substances 0.000 claims description 8
- 229920001577 copolymer Polymers 0.000 claims description 7
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 claims 1
- 229920006163 vinyl copolymer Polymers 0.000 claims 1
- 230000000052 comparative effect Effects 0.000 description 104
- 229910052751 metal Inorganic materials 0.000 description 28
- 239000002184 metal Substances 0.000 description 28
- 238000004891 communication Methods 0.000 description 24
- 238000000034 method Methods 0.000 description 23
- 239000011888 foil Substances 0.000 description 22
- 238000005452 bending Methods 0.000 description 20
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 description 18
- 230000006866 deterioration Effects 0.000 description 18
- 239000000463 material Substances 0.000 description 8
- 230000005540 biological transmission Effects 0.000 description 6
- 238000005259 measurement Methods 0.000 description 6
- 239000011164 primary particle Substances 0.000 description 6
- 238000003917 TEM image Methods 0.000 description 5
- 239000000853 adhesive Substances 0.000 description 4
- 230000001070 adhesive effect Effects 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 239000000243 solution Substances 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- FOIXSVOLVBLSDH-UHFFFAOYSA-N Silver ion Chemical compound [Ag+] FOIXSVOLVBLSDH-UHFFFAOYSA-N 0.000 description 2
- 238000007774 anilox coating Methods 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
- 239000005020 polyethylene terephthalate Substances 0.000 description 2
- WRIDQFICGBMAFQ-UHFFFAOYSA-N (E)-8-Octadecenoic acid Natural products CCCCCCCCCC=CCCCCCCC(O)=O WRIDQFICGBMAFQ-UHFFFAOYSA-N 0.000 description 1
- LQJBNNIYVWPHFW-UHFFFAOYSA-N 20:1omega9c fatty acid Natural products CCCCCCCCCCC=CCCCCCCCC(O)=O LQJBNNIYVWPHFW-UHFFFAOYSA-N 0.000 description 1
- QSBYPNXLFMSGKH-UHFFFAOYSA-N 9-Heptadecensaeure Natural products CCCCCCCC=CCCCCCCCC(O)=O QSBYPNXLFMSGKH-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- ZQPPMHVWECSIRJ-UHFFFAOYSA-N Oleic acid Natural products CCCCCCCCC=CCCCCCCCC(O)=O ZQPPMHVWECSIRJ-UHFFFAOYSA-N 0.000 description 1
- 239000005642 Oleic acid Substances 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000011889 copper foil Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000002500 effect on skin Effects 0.000 description 1
- 238000004993 emission spectroscopy Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- QXJSBBXBKPUZAA-UHFFFAOYSA-N isooleic acid Natural products CCCCCCCC=CCCCCCCCCC(O)=O QXJSBBXBKPUZAA-UHFFFAOYSA-N 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- ZQPPMHVWECSIRJ-KTKRTIGZSA-N oleic acid Chemical compound CCCCCCCC\C=C/CCCCCCCC(O)=O ZQPPMHVWECSIRJ-KTKRTIGZSA-N 0.000 description 1
- 239000002985 plastic film Substances 0.000 description 1
- 229920006255 plastic film Polymers 0.000 description 1
- -1 polyethylene terephthalate Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 150000003378 silver Chemical class 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000006228 supernatant Substances 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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Description
本発明は、銀導電膜およびその製造方法に関し、特に、無線通信用のICタグ用アンテナなどの導電回路の形成に使用する銀導電膜およびその製造方法に関する。 The present invention relates to a silver conductive film and a method for manufacturing the same, and particularly to a silver conductive film used for forming a conductive circuit such as an IC tag antenna for wireless communication and a method for manufacturing the same.
無線通信用のICタグ(以下「ICタグ」という)は、RFID(Radio Frequency IDentification(無線通信による個体識別技術))の一種であり、識別番号などのデータを記憶する半導体チップと、電波を送受信するためのアンテナとを備えた薄型で軽量の小型電子装置である。 An IC tag for wireless communication (hereinafter referred to as “IC tag”) is a kind of RFID (Radio Frequency IDentification), and transmits and receives radio waves to and from a semiconductor chip that stores data such as an identification number. A thin and lightweight small electronic device provided with an antenna for the purpose.
このようなICタグは、物流管理などの様々な分野において様々な使用環境で広く利用されることが期待されており、大量生産により製造コストを低減して普及させることが望まれている。また、ICタグ用アンテナは、データ送受信可能距離(通信距離)を拡大し、送受信時のデータ損失を低減するために、電気抵抗が低いことが必要である。さらに、ICタグは、(例えば、輸送容器のトラッキング、トレーサビリティー、位置情報の管理や、ランドリータグのように衣類洗濯業者による衣類の管理などの)様々な物流管理などの分野において使用されることから、使用環境により繰り返し折り曲げられる場面が多いので、繰り返し折り曲げられても、アンテナの金属疲労による断線や電気抵抗の増大など、アンテナの特性の劣化によってICタグとして使用することができなくなるのを防止する必要があるため、屈曲性が良好であることが必要である。 Such an IC tag is expected to be widely used in various usage environments in various fields such as logistics management, and it is desired to reduce the manufacturing cost by mass production and to spread it. In addition, the IC tag antenna needs to have a low electrical resistance in order to increase the data transmission / reception possible distance (communication distance) and reduce data loss during transmission / reception. In addition, IC tags are used in various logistics management fields (eg, tracking of transport containers, traceability, location information management, and clothing management by clothing washers like laundry tags). Therefore, there are many occasions where it is repeatedly bent depending on the usage environment, so that it can not be used as an IC tag due to deterioration of antenna characteristics such as disconnection due to metal fatigue of the antenna or increase in electrical resistance even if it is repeatedly bent. Therefore, it is necessary that the flexibility be good.
ICタグ用アンテナ回路(導電回路)を形成する方法として、銅線のコイルや針金をアンテナとして利用する方法、銅箔やアルミニウム箔などの金属箔を基材に転写する方法、プラスチックフィルムなどの基材に積層した金属箔に耐エッチング性インクをアンテナ回路パターン印刷してマスキングした後に金属箔をエッチングする方法などがある。 As a method of forming an antenna circuit (conductive circuit) for an IC tag, a method of using a copper wire coil or wire as an antenna, a method of transferring a metal foil such as copper foil or aluminum foil to a substrate, a base such as a plastic film For example, there is a method of etching the metal foil after masking the metal foil laminated on the material with an etching resistant ink by printing an antenna circuit pattern.
しかし、これらの方法では、生産性に制限があり、大量生産には向いていないことから、製造コストをさらに低減させるのが困難である。また、これらの方法のうち、金属箔を基材に転写する方法や金属箔をエッチングする方法では、金属箔が圧延などより製造されているが、金属箔中の金属の割合がほぼ100%と高い値であるため、金属箔によってアンテナ回路が形成されたICタグは、電気特性が良好になるものの、屈曲性が悪くなるという問題がある。また、金属箔によってアンテナ回路が形成されたICタグでは、一般に膜厚10〜50μm程度の金属箔が使用されているが、金属箔が厚過ぎると、金属板の性質に近くなって基材との密着性が低下し、ICタグの屈曲時に金属箔が基材から剥離する可能性がある。さらに、金属箔中の金属の割合が高いため、ICタグの屈曲時に屈曲面に応力が集中してしまい、屈曲面にクラックが発生し易くなり、その結果、電気特性の悪化や断線が生じ、ICタグ用アンテナとして機能しなくなる。一方、ICタグの屈曲性を向上させるために、金属箔の代わりに、金属成分と樹脂成分からなる導電膜を使用して金属の割合を低下させると、一般に応力緩和により屈曲性を向上させることができるが、金属成分の量が低下することにより、電気抵抗が悪化して、ICタグ用アンテナとして十分な特性を満たさなくなる。 However, these methods are limited in productivity and are not suitable for mass production, so that it is difficult to further reduce manufacturing costs. Of these methods, in the method of transferring the metal foil to the substrate and the method of etching the metal foil, the metal foil is manufactured by rolling or the like, but the ratio of the metal in the metal foil is almost 100%. Since the value is high, an IC tag in which an antenna circuit is formed of a metal foil has a problem of poor flexibility although it has good electrical characteristics. In addition, in an IC tag in which an antenna circuit is formed with a metal foil, a metal foil with a film thickness of about 10 to 50 μm is generally used. However, if the metal foil is too thick, the properties of the metal plate become close to the substrate. There is a possibility that the metal foil peels off from the base material when the IC tag is bent. Furthermore, since the ratio of the metal in the metal foil is high, stress is concentrated on the bent surface when the IC tag is bent, and cracks are easily generated on the bent surface. As a result, deterioration of electrical characteristics and disconnection occur. It will not function as an IC tag antenna. On the other hand, in order to improve the flexibility of the IC tag, if the metal ratio is reduced using a conductive film made of a metal component and a resin component instead of the metal foil, the flexibility is generally improved by stress relaxation. However, when the amount of the metal component is reduced, the electrical resistance is deteriorated and the characteristics sufficient for an IC tag antenna are not satisfied.
金属箔を使用しないで基材との密着性が良好な導電回路を形成するICタグ用アンテナを製造する方法として、40質量%以下の銀粒子を含む水性導電性インクを、フレキソ印刷によりフィルム状基材の表面に塗布して乾燥させることによって、フィルム状基材の表面に厚さ0.1〜0.5μmの導電膜を形成してICタグ用アンテナを製造する方法が提案されている(例えば、特許文献1参照)。 As a method of manufacturing an antenna for an IC tag that forms a conductive circuit having good adhesion to a substrate without using a metal foil, a water-based conductive ink containing 40% by mass or less of silver particles is formed into a film by flexographic printing. There has been proposed a method of manufacturing an IC tag antenna by forming a conductive film having a thickness of 0.1 to 0.5 μm on the surface of a film-like base material by applying and drying on the surface of the base material ( For example, see Patent Document 1).
特許文献1の方法では、電気抵抗が低いICタグ用アンテナを大量生産して製造コストを低減することができるが、銀粒子の含有量が少ない導電性インクを使用して厚さ0.1〜0.5μmの薄い導電膜を形成しており、導電膜中の銀の割合がほぼ100%と高いため、金属箔を基材に転写する方法や金属箔をエッチングする方法と同様に、屈曲性が悪いという問題がある。 In the method of Patent Document 1, an IC tag antenna having a low electrical resistance can be mass-produced to reduce the manufacturing cost. However, a thickness of 0.1 to 0.1 mm can be obtained by using a conductive ink having a low silver particle content. Since a thin conductive film of 0.5 μm is formed and the ratio of silver in the conductive film is as high as almost 100%, the flexibility is similar to the method of transferring the metal foil to the substrate and the method of etching the metal foil. There is a problem that is bad.
したがって、本発明は、このような従来の問題点に鑑み、電気特性および屈曲性に優れたICタグ用アンテナなどの導電回路を安価に大量生産可能な銀導電膜およびその製造方法を提供することを目的とする。 Therefore, in view of such conventional problems, the present invention provides a silver conductive film capable of mass-producing a conductive circuit such as an IC tag antenna having excellent electrical characteristics and flexibility at low cost and a method for manufacturing the same. With the goal.
本発明者らは、上記課題を解決するために鋭意研究した結果、10〜50体積%の銀粒子の焼結体を含み且つ体積抵抗率が3〜100μΩ・cmである銀導電膜を製造することによって、電気特性および屈曲性に優れたICタグ用アンテナなどの導電回路を安価に大量生産可能な銀導電膜を製造することができることを見出し、本発明を完成するに至った。 As a result of intensive studies to solve the above problems, the present inventors produce a silver conductive film containing a sintered body of 10 to 50% by volume of silver particles and having a volume resistivity of 3 to 100 μΩ · cm. Thus, it was found that a silver conductive film capable of mass-producing a conductive circuit such as an IC tag antenna having excellent electrical characteristics and flexibility at low cost can be manufactured, and the present invention has been completed.
すなわち、本発明による銀導電膜は、10〜50体積%の銀粒子の焼結体を含み且つ体積抵抗率が3〜100μΩ・cmであることを特徴とする。この銀導電膜中に含まれる銀粒子の焼結体の量が30〜50体積%であるのが好ましい。また、この銀導電膜の表面抵抗率が0.5Ω/□以下であるのが好ましく、厚さが1〜6μmであるのが好ましい。 That is, the silver conductive film according to the present invention includes a sintered body of 10 to 50% by volume of silver particles and has a volume resistivity of 3 to 100 μΩ · cm. The amount of the sintered body of silver particles contained in the silver conductive film is preferably 30 to 50% by volume. Moreover, it is preferable that the surface resistivity of this silver electrically conductive film is 0.5 ohm / square or less, and it is preferable that it is 1-6 micrometers in thickness.
また、本発明による銀導電膜の製造方法は、50〜70質量%の銀粒子を含む銀粒子分散液を基板に塗布した後に焼成することにより、上記の銀導電膜を基板上に形成することを特徴とする。この銀導電膜の製造方法において、銀粒子分散液の基板への塗布が、フレキソ印刷によって行われるのが好ましく、フレキソ印刷を複数回繰り返すことによって行われるのが好ましく、フレキソ印刷を2〜4回繰り返すことによって行われるのがさらに好ましい。また、この銀導電膜の製造方法において、銀粒子の平均粒径が20nm以下であるのが好ましい。 Moreover, the manufacturing method of the silver electrically conductive film by this invention forms said silver electrically conductive film on a board | substrate by baking after apply | coating the silver particle dispersion liquid containing 50-70 mass% silver particle to a board | substrate. It is characterized by. In this method for producing a silver conductive film, the silver particle dispersion is preferably applied to the substrate by flexographic printing, preferably by repeating flexographic printing a plurality of times, and flexographic printing is performed 2 to 4 times. More preferably, the process is repeated. In this method for producing a silver conductive film, the average particle size of silver particles is preferably 20 nm or less.
さらに、本発明によるRFIDタグ用アンテナは、上記の銀導電膜により形成される。また、本発明によるRFIDタグは、上記の銀導電膜により形成されたRFIDタグ用アンテナと、ICチップとを備えている。 Furthermore, the RFID tag antenna according to the present invention is formed of the silver conductive film. An RFID tag according to the present invention includes an RFID tag antenna formed of the silver conductive film and an IC chip.
なお、本明細書中において、「銀粒子の平均粒径」とは、銀粒子の透過型電子顕微鏡写真(TEM像)による一次粒子径の平均値である一次粒子平均径をいう。 In the present specification, the “average particle diameter of silver particles” refers to an average primary particle diameter that is an average value of primary particle diameters obtained by transmission electron micrographs (TEM images) of silver particles.
本発明によれば、電気特性および屈曲性に優れたICタグ用アンテナなどの導電回路を安価に大量生産可能な銀導電膜を製造することができる。 ADVANTAGE OF THE INVENTION According to this invention, the silver electrically conductive film which can mass-produce cheaply conductive circuits, such as an IC tag antenna excellent in the electrical property and the flexibility, can be manufactured.
本発明による銀導電膜の実施の形態は、10〜50体積%の銀粒子の焼結体を含み且つ体積抵抗率が3〜100μΩ・cmである。銀導電膜中の銀粒子の焼結体の量が10体積%未満では、銀導電膜中の銀粒子の焼結体の量が少な過ぎて導電性が悪化し、ICタグ用アンテナの形成に使用した場合に、ICタグ用アンテナとして機能しなくなる。一方、銀導電膜中の銀粒子の量が50体積%を超えると、ICタグ用アンテナの形成に使用した場合に、ICタグの屈曲時に屈曲面に応力が集中してしまい、屈曲面にクラックが発生し易くなる。その結果、電気特性の悪化や断線が生じ易くなり、ICタグ用アンテナとして機能しない可能性が高くなる。特に、銀導電膜中の銀粒子の量が30〜50体積%であれば、ICタグ用アンテナの形成に使用した場合に、周波数955MHzの通信距離が(従来の通信距離と同等以上の)4.0m以上になり、さらに屈曲性も良好であるため、銀導電膜中の銀粒子の量が30〜50体積%であるのがさらに好ましい。また、銀導電膜の体積抵抗率が3〜100μΩ・cmの範囲では、ICタグ用アンテナの形成に使用した場合に、通信距離を長くしてリーダライタとのICタグのデータの送受信を確実に行うことができるため、ICタグ用アンテナによる送受信時のデータ損失が生じ難くなる。 An embodiment of the silver conductive film according to the present invention includes a sintered body of 10 to 50% by volume of silver particles and has a volume resistivity of 3 to 100 μΩ · cm. When the amount of the sintered body of silver particles in the silver conductive film is less than 10% by volume, the amount of the sintered body of silver particles in the silver conductive film is too small and the conductivity is deteriorated, so that the IC tag antenna is formed. When used, it will not function as an IC tag antenna. On the other hand, when the amount of silver particles in the silver conductive film exceeds 50% by volume, stress is concentrated on the bent surface when the IC tag is bent when used for forming an antenna for an IC tag, and cracks are generated on the bent surface. Is likely to occur. As a result, deterioration of electrical characteristics and disconnection are likely to occur, and the possibility of not functioning as an IC tag antenna increases. In particular, if the amount of silver particles in the silver conductive film is 30 to 50% by volume, when used for forming an IC tag antenna, the communication distance at a frequency of 955 MHz is equal to or greater than the conventional communication distance. It is more preferable that the amount of silver particles in the silver conductive film is 30 to 50% by volume because the thickness is 0.0 m or more and the flexibility is good. In addition, when the volume resistivity of the silver conductive film is in the range of 3 to 100 μΩ · cm, when used for the formation of an antenna for an IC tag, the communication distance is lengthened to ensure the transmission / reception of the data of the IC tag with the reader / writer. Therefore, data loss during transmission / reception by the IC tag antenna is less likely to occur.
また、この銀導電膜の表面抵抗率は0.5Ω/□以下であるのが好ましい。銀導電膜の表面抵抗率が0.5Ω/□以下の範囲では、ICタグ用アンテナの形成に使用した場合に、通信距離を長くしてリーダライタとのICタグのデータの送受信を確実に行うことができるため、ICタグ用アンテナによる送受信時のデータ損失が生じ難くなる。 The surface resistivity of the silver conductive film is preferably 0.5Ω / □ or less. When the surface resistivity of the silver conductive film is 0.5Ω / □ or less, when used to form an antenna for an IC tag, the communication distance is increased and the IC tag data is reliably transmitted and received with the reader / writer. Therefore, data loss during transmission / reception by the IC tag antenna is less likely to occur.
さらに、この銀導電膜の厚さは1〜6μmであるのが好ましい。銀導電膜の厚さは、薄くなるほどコスト的に有利になるが、1μm未満になると、ICタグ用アンテナなどの形成に使用した場合に、表皮効果によりUHF帯における電気抵抗が増大して通信距離が短くなる。 Further, the thickness of the silver conductive film is preferably 1 to 6 μm. The thinner the silver conductive film, the more advantageous in terms of cost. However, when the thickness is less than 1 μm, the electrical resistance in the UHF band increases due to the skin effect when used for forming an IC tag antenna or the like, and the communication distance. Becomes shorter.
また、本発明による銀導電膜の製造方法の実施の形態では、50〜70質量%の銀粒子を含む銀粒子分散液を基板に塗布した後に焼成することにより、上記の銀導電膜を基板上に形成する。銀粒子分散液中の銀粒子の含有量が50質量%未満では、上記の銀導電膜を基板上に形成し難くなり、銀導電膜中の銀粒子の焼結体の量が少な過ぎるために導電性が悪化して電気抵抗が高くなり、70質量%を超えると、銀粒子分散液の粘度が高くなって、フレキソ印刷などにより塗布するのが困難になる。 Moreover, in embodiment of the manufacturing method of the silver electrically conductive film by this invention, after apply | coating the silver particle dispersion liquid containing 50-70 mass% silver particles to a board | substrate, it baked, said silver electrically conductive film is carried out on a board | substrate. To form. When the silver particle content in the silver particle dispersion is less than 50% by mass, it becomes difficult to form the silver conductive film on the substrate, and the amount of the sintered body of silver particles in the silver conductive film is too small. When the electrical conductivity deteriorates and the electric resistance increases and exceeds 70% by mass, the viscosity of the silver particle dispersion becomes high, and it becomes difficult to apply by flexographic printing or the like.
この銀導電膜の製造方法において、銀粒子分散液の基板への塗布が、フレキソ印刷によって行われるのが好ましく、フレキソ印刷を複数回繰り返すことによって行われるのが好ましい。特に、フレキソ印刷を2〜4回繰り返すと、基板上に形成される銀導電膜中の銀粒子の焼結体の量と銀導電膜の電気抵抗のバランスが良好になるため、フレキソ印刷を2〜4回繰り返すのがさらに好ましい。 In this method for producing a silver conductive film, the silver particle dispersion is preferably applied to the substrate by flexographic printing, and preferably by repeating flexographic printing a plurality of times. In particular, when the flexographic printing is repeated 2 to 4 times, the balance between the amount of the sintered silver particles in the silver conductive film formed on the substrate and the electrical resistance of the silver conductive film becomes good. More preferably, it is repeated ~ 4 times.
また、この銀導電膜の製造方法において、銀粒子の平均粒径が20nm以下であるのが好ましく、5〜15nmであるのが好ましい。銀粒子の平均粒径が数nm〜十数nm程度になると、比表面積が大きくなって融点が劇的に低下するため、300℃以下の低温で焼成しても銀粒子同士を焼結させることができる(すなわち、銀ナノ粒子の低温焼結性を得ることができる)が、銀粒子の平均粒径が20nmより大きくなると、銀ナノ粒子の低温焼結性を得ることが困難になる。 In this method for producing a silver conductive film, the average particle size of the silver particles is preferably 20 nm or less, and preferably 5 to 15 nm. When the average particle size of the silver particles is about several nanometers to several tens of nanometers, the specific surface area increases and the melting point decreases dramatically. (That is, the low-temperature sinterability of the silver nanoparticles can be obtained). However, when the average particle size of the silver particles is larger than 20 nm, it is difficult to obtain the low-temperature sinterability of the silver nanoparticles.
なお、銀粒子の平均粒径(一次粒子平均径)は、例えば、60質量%のAg粒子(平均粒径10nmの銀粒子)と3.0質量%の塩化ビニルコポリマーラテックスと2.0質量%のポリウレタンシックナーと2.5質量%のプロピレングリコールとを含むAgインク(ピーケム アソシエイツ インク社製のPFI−700型)などの銀粒子を含むAgインク2質量部をシクロヘキサン96質量部とオレイン酸2質量部の混合溶液に添加し、超音波によって分散させた後、得られた分散溶液を支持膜付きCuマイクログリッドに滴下して乾燥させ、このマイクログリッド上の銀粒子を透過型電子顕微鏡(日本電子株式会社製のJEM−100CXMark−II型)により加速電圧100kVとして明視野で観察した像を倍率300,000倍で撮影し、得られたTEM像から算出することができる。この銀粒子の一次粒子平均径の算出は、例えば、画像解析ソフト(旭化成エンジニアリング株式会社製のA像くん(登録商標))を使用して行うことができる。この画像解析ソフトは、色の濃淡で個々の粒子を識別して解析するものであり、例えば、300,000倍のTEM像に対して「粒子の明度」を「暗」、「雑音除去フィルタ」を「有」、「円形しきい値」を「20」、「重なり度」を「50」とする条件で円形粒子解析を行って、200個以上の粒子について一次粒子径を測定し、その数平均径を求めて一次粒子平均径とすることができる。なお、TEM像中に凝結粒子や異形粒子が多数ある場合には、測定不能とすればよい。 In addition, the average particle diameter (primary particle average diameter) of the silver particles is, for example, 60% by mass of Ag particles (silver particles having an average particle diameter of 10 nm), 3.0% by mass of vinyl chloride copolymer latex, and 2.0% by mass. 2 parts by mass of Ag ink containing silver particles such as Ag ink (PFI-700 type manufactured by P-Chem Associates, Inc.) containing 2% by mass of polyurethane thickener and 2.5% by mass of propylene glycol, and 2 parts by mass of oleic acid After being added to a mixed solution of a part and dispersed by ultrasonic waves, the obtained dispersion solution is dropped onto a Cu microgrid with a supporting film and dried, and silver particles on the microgrid are observed with a transmission electron microscope (JEOL). An image observed in a bright field at an acceleration voltage of 100 kV with a JEM-100 CXMark-II type manufactured by Co., Ltd., magnification of 300,000 And can be calculated from the obtained TEM image. The primary particle average diameter of the silver particles can be calculated using, for example, image analysis software (A Image-kun (registered trademark) manufactured by Asahi Kasei Engineering Co., Ltd.). This image analysis software discriminates and analyzes individual particles based on color shading. For example, for a 300,000-fold TEM image, the “particle brightness” is “dark” and “noise removal filter”. Is “Yes”, “Circular threshold” is “20”, and “Overlapping degree” is “50”, and circular particle analysis is performed to measure the primary particle diameter of 200 or more particles. An average diameter can be calculated | required and it can be set as an average primary particle diameter. In addition, what is necessary is just to make measurement impossible when there are many condensed particles and irregular-shaped particles in a TEM image.
以下、本発明による銀導電膜およびその製造方法の実施例について詳細に説明する。 Hereinafter, the Example of the silver electrically conductive film by this invention and its manufacturing method is described in detail.
[実施例1〜4]
まず、60質量%のAg粒子(平均粒径10nmの銀粒子)と、3.0質量%の塩化ビニルコポリマーラテックスと、2.0質量%のポリウレタンシックナーと、2.5質量%のプロピレングリコールとを含むAgインク(ピーケム アソシエイツ インク社製のPFI−700型)を用意した。
[Examples 1 to 4]
First, 60% by mass of Ag particles (silver particles having an average particle size of 10 nm), 3.0% by mass of vinyl chloride copolymer latex, 2.0% by mass of polyurethane thickener, 2.5% by mass of propylene glycol, Ink ink (PFI-700 type manufactured by P-Chem Associates, Inc.) was prepared.
次に、フレキソ印刷機(日本電子精機株式会社製の多目的微細印刷機JEM Flex)と、フレキソ印刷版(株式会社渡辺護三堂製、印刷版の材質は旭化成株式会社製の板状感光性樹脂AWP グレードDEF、表面加工150ライン、96DOT%)を使用し、アニロックス容量8cc/m2(400線/インチ)、印刷速度20m/分、印刷回数をそれぞれ1回(実施例1)、2回(実施例2)、3回(実施例3)および4回(実施例4)として、基材(デュポンテイジンフィルム社製のPET(ポリエチレンテレフタレート)フィルム メリネックス545(Melinex:登録商標))10上に、図1に示すように、3cm×15cm程度の大きさの略矩形の5枚の膜12を形成するように上記のAgインクを印刷した後、ホットプレート上で印刷物を140℃で30秒間熱処理して焼成することによって導電膜(銀導電膜)を得た。
Next, flexographic printing machine (JEM Flex, a multi-purpose fine printing machine manufactured by JEOL Ltd.) and flexographic printing plate (manufactured by Watanabe Gosando Co., Ltd.) AWP grade DEF, 150 lines of surface treatment, 96 DOT%), anilox capacity of 8 cc / m 2 (400 lines / inch), printing speed of 20 m / min, printing frequency once (Example 1), twice (Example 1) Example 2) Three times (Example 3) and four times (Example 4) on a base material (PET (polyethylene terephthalate) film Melinex 545 (Melinex: registered trademark)) 10 manufactured by Dupontidine Film Co., Ltd. As shown in FIG. 1, after printing the above Ag ink so as to form five substantially
次に、作製した導電膜を基板とともに5.0mm×78.5mmの大きさの2枚の略矩形に切断し、図2に示すように、粘着性剥離フィルム(リンテック株式会社製の型式PET38)上に貼り付けてダイポールアンテナ14を作製した後、このダイポールアンテナ14のICチップ実装部に異方性導電接着剤(ACP)(京セラケミカル株式会社製のTAP0604C(Au/Niコートポリマー粒子))を薄く塗布し、このACP上にICチップ(Impinj社製のMonza2)16を配置し、熱圧着装置(ミュールバウワー社製のTTS300)により160℃の温度で1.0Nの圧力を加えて10秒間密着させ、ICチップ16をダイポールアンテナ14に固定して接続させることによって、ダイポールアンテナ14にICチップ16を実装した。
Next, the produced conductive film was cut into two substantially rectangular shapes of 5.0 mm × 78.5 mm together with the substrate, and as shown in FIG. 2, an adhesive release film (type PET38 manufactured by Lintec Corporation). After the
このようにして作製したICチップ実装ダイポールアンテナについて、導電膜の膜厚、電気抵抗(ライン抵抗)および表面抵抗率を測定するとともに、導電膜の体積抵抗率および導電膜中の金属(Ag)の割合を算出した。 For the IC chip-mounted dipole antenna thus fabricated, the film thickness, electrical resistance (line resistance), and surface resistivity of the conductive film were measured, and the volume resistivity of the conductive film and the metal (Ag) in the conductive film were measured. The percentage was calculated.
導電膜の膜厚は、レーザーマイクロスコープ(KEYENCE社製の型式VK−9700)を用いて、導電膜が形成された基材の表面と導電膜の表面との高低差を100箇所測定し、平均値を算出することによって求めた。その結果、導電膜の膜厚は、実施例1では1.4μm、実施例2では2.1μm、実施例3では3.0μm、実施例4では3.6μmであった。 The film thickness of the conductive film was measured by measuring the height difference between the surface of the substrate on which the conductive film was formed and the surface of the conductive film using a laser microscope (model VK-9700 manufactured by KEYENCE), and averaged It was determined by calculating the value. As a result, the film thickness of the conductive film was 1.4 μm in Example 1, 2.1 μm in Example 2, 3.0 μm in Example 3, and 3.6 μm in Example 4.
導電膜の電気抵抗(ライン抵抗)は、ダイポールアンテナの一方の導電膜(5.0mm×78.5mm)の長手方向の電気抵抗をテスター(CUSTOM社製の型式CDM−03D)により測定した。その結果、導電膜の電気抵抗は、実施例1では5.0Ω、実施例2では1.3Ω、実施例3では0.8Ω、実施例4では0.6Ωであった。 For the electrical resistance (line resistance) of the conductive film, the electrical resistance in the longitudinal direction of one conductive film (5.0 mm × 78.5 mm) of the dipole antenna was measured with a tester (model CDM-03D manufactured by CUSTOM). As a result, the electric resistance of the conductive film was 5.0Ω in Example 1, 1.3Ω in Example 2, 0.8Ω in Example 3, and 0.6Ω in Example 4.
導電膜の表面抵抗率は、導電膜を2.0cm×2.0cmの大きさにカットし、表面抵抗率測定器(三菱化学アナリティック株式会社製のロレスターGP)を用いて、4端子法により測定した。その結果、導電膜の表面抵抗率は、実施例1では0.25Ω/□、実施例2では0.06Ω/□、実施例3では0.03Ω/□、実施例4では0.02Ω/□であった。 The surface resistivity of the conductive film is obtained by cutting the conductive film into a size of 2.0 cm × 2.0 cm and using a surface resistivity meter (Lorestar GP manufactured by Mitsubishi Chemical Analytic Co., Ltd.) by a four-terminal method. It was measured. As a result, the surface resistivity of the conductive film was 0.25Ω / □ in Example 1, 0.06Ω / □ in Example 2, 0.03Ω / □ in Example 3, 0.02Ω / □ in Example 4. Met.
導電膜の体積抵抗率は、導電膜の膜厚、電気抵抗および面積(ダイポールアンテナの一方の導電膜の面積(5.0mm×78.5mm))から求めた。その結果、導電膜の体積抵抗率は、実施例1では44.6μΩ・cm、実施例2では17.4μΩ・cm、実施例3では15.3μΩ・cm、実施例4では13.6μΩ・cmであった。 The volume resistivity of the conductive film was determined from the film thickness, electrical resistance, and area of the conductive film (the area of one conductive film of the dipole antenna (5.0 mm × 78.5 mm)). As a result, the volume resistivity of the conductive film was 44.6 μΩ · cm in Example 1, 17.4 μΩ · cm in Example 2, 15.3 μΩ · cm in Example 3, and 13.6 μΩ · cm in Example 4. Met.
導電膜中の金属(Ag)の割合は、印刷面積2.6cm×13.1cmの導電膜を(既知の重量の)濃硝酸溶液に溶解し、溶液中のAg濃度をICP発光分析法より求めて、導電膜中のAgの重量(g)を算出した後、Agの密度10.5g/cm3からAgの体積(cm3)を求めるとともに、導電膜の膜厚と印刷面積(2.6cm×13.1cm)から導電膜の体積を求め、Agの体積(cm3)×100/導電膜の体積(cm3)から算出した。その結果、導電膜中のAgの割合は、実施例1では22.4体積%、実施例2では31.0体積%、実施例3では37.1体積%、実施例4では48.3体積%であった。 The ratio of the metal (Ag) in the conductive film is obtained by dissolving a conductive film having a printed area of 2.6 cm × 13.1 cm in a concentrated nitric acid solution (of a known weight), and obtaining the Ag concentration in the solution by ICP emission spectrometry. After calculating the weight (g) of Ag in the conductive film, the Ag volume (cm 3 ) is determined from the Ag density of 10.5 g / cm 3 , and the conductive film thickness and printed area (2.6 cm) are calculated. × 13.1 cm) determine the volume of the conductive film from was calculated from the volume of Ag (cm 3) × 100 / conductive volume (cm 3). As a result, the ratio of Ag in the conductive film was 22.4% by volume in Example 1, 31.0% by volume in Example 2, 37.1% by volume in Example 3, and 48.3% by Example 4. %Met.
次に、作製したICチップ実装ダイポールアンテナについて、電波暗箱(マイクロニクス社製のMY1530)中において、通信距離測定器(Voyantic社製のtagformance)を用いて、800MHz〜1100MHzの周波数領域(ISO/IEC 18000−6C規格に準拠)の通信距離(Theoretical read range forward)を測定した。なお、この測定に先立って、この条件における環境設定(tagformance付属のリファレンスタグによる設定)を行った。その結果、周波数955MHzの通信距離は、実施例1では3.8m、実施例2では4.2m、実施例3では4.4m、実施例4では4.2mであった。 Next, with respect to the produced IC chip-mounted dipole antenna, a frequency range (ISO / IEC) of 800 MHz to 1100 MHz is used in a anechoic box (MY1530 manufactured by Micronics) using a communication distance measuring device (tagformance manufactured by Voyantic). The communication distance (based on 18000-6C standard) was measured. Prior to this measurement, the environment was set under these conditions (setting using a reference tag attached to tagformance). As a result, the communication distance at a frequency of 955 MHz was 3.8 m in Example 1, 4.2 m in Example 2, 4.4 m in Example 3, and 4.2 m in Example 4.
次に、図3に示すように、本実施例で作製した導電膜を5.0mm×20.0mmの大きさの略矩形の導電膜12’に切断して、粘着性剥離フィルム(リンテック株式会社製の型式PET38)18上に貼り付けて屈曲試験用サンプル20を作製した。この屈曲試験用サンプル20の導電膜12’の部分を、図4に示すように、R=0.5mmの鉄製の柱22に5.0Nの力で擦り付けて、90°屈曲させた状態で矢印方向に10cm動かす動作をそれぞれ10回、100回および500回行った後のライン抵抗(テスター)を測定し、それぞれの(動作後のライン抵抗×100/試験前のライン抵抗)から抵抗悪化率(ライン抵抗が変化しない場合では100%)を求めた。その結果、抵抗悪化率は、実施例1および2では10回後、100回後、500回後のいずれも100%であり、実施例3では10回後および100回後で100%、500回後で125%であり、実施例4では10回後で100%、100回後で150%、500回後で180%であった。
Next, as shown in FIG. 3, the conductive film produced in this example was cut into a substantially rectangular
これらの実施例1〜4の条件および結果を表1〜表3に示す。 The conditions and results of Examples 1 to 4 are shown in Tables 1 to 3.
[比較例1、実施例5〜7]
まず、実施例1〜4で使用したAgインクに、塩化ビニルコポリマーラテックスとポリウレタンシックナーとプロピレングリコールを加えて、50質量%のAg粒子(平均粒径10nmの銀粒子)と、18.4質量%の塩化ビニルコポリマーラテックスと、2.0質量%のポリウレタンシックナーと、2.5質量%のプロピレングリコールとを含むAgインクを用意した。
[Comparative Example 1, Examples 5-7]
First, vinyl chloride copolymer latex, polyurethane thickener and propylene glycol were added to the Ag ink used in Examples 1 to 4, and 50% by mass of Ag particles (silver particles having an average particle size of 10 nm) and 18.4% by mass. An Ag ink containing a vinyl chloride copolymer latex, 2.0% by mass of polyurethane thickener, and 2.5% by mass of propylene glycol was prepared.
このAgインクを用いた以外は、実施例1〜4と同様の方法により、印刷回数をそれぞれ1回(比較例1)、2回(実施例5)、3回(実施例6)および4回(実施例7)として、導電膜を得た後、ICチップ実装ダイポールアンテナおよび屈曲試験用サンプルを作製し、導電膜の膜厚、電気抵抗および表面抵抗率を測定するとともに、導電膜の体積抵抗率および導電膜中のAgの割合を算出した。また、実施例1〜4と同様の方法により、ICチップ実装ダイポールアンテナの通信距離を測定するとともに、屈曲試験用サンプルの抵抗悪化率を求めた。 Except for using this Ag ink, the number of times of printing was 1 time (Comparative Example 1), 2 times (Example 5), 3 times (Example 6) and 4 times in the same manner as in Examples 1 to 4. As Example 7, after obtaining a conductive film, an IC chip-mounted dipole antenna and a bending test sample were prepared, and the film thickness, electrical resistance, and surface resistivity of the conductive film were measured, and the volume resistance of the conductive film was measured. The ratio and the ratio of Ag in the conductive film were calculated. Further, the communication distance of the IC chip mounted dipole antenna was measured by the same method as in Examples 1 to 4, and the resistance deterioration rate of the bending test sample was obtained.
その結果、導電膜の膜厚は、比較例1では1.7μm、実施例5では2.5μm、実施例6では3.4μm、実施例7では4.8μmであり、導電膜の電気抵抗は、比較例1ではオーバーロード(OL)で測定不能、実施例5では5.0Ω、実施例6では2.5Ω、実施例7では1.5Ωであり、導電膜の表面抵抗率は、比較例1ではオーバーロード(OL)で測定不能、実施例5では0.43Ω/□、実施例6では0.18Ω/□、実施例7では0.10Ω/□であった。また、導電膜の体積抵抗率は、比較例1ではオーバーロード(OL)で算出不能、実施例5では78.7μΩ・cm、実施例6では53.5μΩ・cm、実施例7では46.1μΩ・cmであった。また、導電膜中のAgの割合は、比較例1では8.5体積%、実施例5では15.5体積%、実施例6では17.5体積%、実施例7では18.8体積%であった。また、周波数955MHzの通信距離は、比較例1では0.0m、実施例5では3.7m、実施例6では3.7m、実施例7では3.8mであった。さらに、抵抗悪化率は、比較例1ではオーバーロード(OL)で算出不能であり、実施例5〜7では10回後、100回後、500回後のいずれも100%であった。 As a result, the film thickness of the conductive film was 1.7 μm in Comparative Example 1, 2.5 μm in Example 5, 3.4 μm in Example 6, and 4.8 μm in Example 7, and the electrical resistance of the conductive film was In Comparative Example 1, measurement was not possible due to overload (OL), in Example 5, 5.0Ω, in Example 6, 2.5Ω, and in Example 7, 1.5Ω. In Example 1, measurement was impossible due to overload (OL), in Example 5, it was 0.43Ω / □, in Example 6, 0.18Ω / □, and in Example 7, 0.10Ω / □. The volume resistivity of the conductive film cannot be calculated by overload (OL) in Comparative Example 1, 78.7 μΩ · cm in Example 5, 53.5 μΩ · cm in Example 6, and 46.1 μΩ in Example 7. -It was cm. The ratio of Ag in the conductive film was 8.5% by volume in Comparative Example 1, 15.5% by volume in Example 5, 17.5% by volume in Example 6, and 18.8% by volume in Example 7. Met. The communication distance at a frequency of 955 MHz was 0.0 m in Comparative Example 1, 3.7 m in Example 5, 3.7 m in Example 6, and 3.8 m in Example 7. Furthermore, the resistance deterioration rate could not be calculated due to overload (OL) in Comparative Example 1, and in Examples 5 to 7, all after 10 times, after 100 times, and after 500 times were 100%.
これらの実施例5〜7および比較例1の条件および結果を表1〜表3に示す。 The conditions and results of Examples 5 to 7 and Comparative Example 1 are shown in Tables 1 to 3.
[実施例8〜10、比較例2]
まず、実施例1〜4で使用したAgインクを3000rpmで10分間遠心分離処理を行った後、上澄み液を除去して、Ag粒子の濃度を70質量%に調整したAgインクを用意した。
[Examples 8 to 10, Comparative Example 2]
First, the Ag ink used in Examples 1 to 4 was centrifuged at 3000 rpm for 10 minutes, and then the supernatant was removed to prepare an Ag ink in which the concentration of Ag particles was adjusted to 70% by mass.
このAgインクを用いた以外は、実施例1〜4と同様の方法により、印刷回数をそれぞれ1回(実施例8)、2回(実施例9)、3回(実施例10)および4回(比較例2)として、導電膜を得た後、ICチップ実装ダイポールアンテナおよび屈曲試験用サンプルを作製し、導電膜の膜厚、電気抵抗および表面抵抗率を測定するとともに、導電膜の体積抵抗率および導電膜中のAgの割合を算出した。また、実施例1〜4と同様の方法により、ICチップ実装ダイポールアンテナの通信距離を測定するとともに、屈曲試験用サンプルの抵抗悪化率を求めた。 Except for using this Ag ink, the number of times of printing was 1 (Example 8), 2 (Example 9), 3 (Example 10) and 4 times in the same manner as in Examples 1 to 4, respectively. (Comparative Example 2) After obtaining a conductive film, an IC chip-mounted dipole antenna and a sample for bending test were prepared, and the film thickness, electrical resistance, and surface resistivity of the conductive film were measured, and the volume resistance of the conductive film was measured. The ratio and the ratio of Ag in the conductive film were calculated. Further, the communication distance of the IC chip mounted dipole antenna was measured by the same method as in Examples 1 to 4, and the resistance deterioration rate of the bending test sample was obtained.
その結果、導電膜の膜厚は、実施例8では1.7μm、実施例9では2.5μm、実施例10では2.8μm、比較例2では3.1μmであり、導電膜の電気抵抗は、実施例8では3.1Ω、実施例9では1.1Ω、実施例10では0.6Ω、比較例2では0.4Ωであり、導電膜の表面抵抗率は、実施例8では0.19Ω/□、実施例9では0.06Ω/□、実施例10では0.03Ω/□、比較例2では0.01Ω/□であった。また、導電膜の体積抵抗率は、実施例8では32.8μΩ・cm、実施例9では17.4μΩ・cm、実施例10では10.8μΩ・cm、比較例2では7.9μΩ・cmであった。また、導電膜中のAgの割合は、実施例8では25.6体積%、実施例9では32.7体積%、実施例10では43.3体積%、比較例2では54.7体積%であった。また、周波数955MHzの通信距離は、実施例8では3.8m、実施例9では4.2m、実施例10では4.2m、比較例2では4.4mであった。さらに、抵抗悪化率は、実施例8では10回後、100回後、500回後のいずれも100%であり、実施例9では10回後および100回後で100%、500回後で120%であり、実施例10では10回後で100%、100回後で110%、500回後で150%であり、比較例2では10回後で100%、100回後で350%、500回後で1200%であった。 As a result, the film thickness of the conductive film was 1.7 μm in Example 8, 2.5 μm in Example 9, 2.8 μm in Example 10, and 3.1 μm in Comparative Example 2, and the electrical resistance of the conductive film was Example 8 is 3.1Ω, Example 9 is 1.1Ω, Example 10 is 0.6Ω, and Comparative Example 2 is 0.4Ω. The surface resistivity of the conductive film is 0.19Ω in Example 8. / □, 0.09Ω / □ in Example 9, 0.03Ω / □ in Example 10, and 0.01Ω / □ in Comparative Example 2. The volume resistivity of the conductive film was 32.8 μΩ · cm in Example 8, 17.4 μΩ · cm in Example 9, 10.8 μΩ · cm in Example 10, and 7.9 μΩ · cm in Comparative Example 2. there were. The proportion of Ag in the conductive film was 25.6% by volume in Example 8, 32.7% by volume in Example 9, 43.3% by volume in Example 10, and 54.7% by volume in Comparative Example 2. Met. The communication distance at a frequency of 955 MHz was 3.8 m in Example 8, 4.2 m in Example 9, 4.2 m in Example 10, and 4.4 m in Comparative Example 2. Furthermore, the resistance deterioration rate was 100% after 10 times, 100 times, and 500 times in Example 8, and 100% after 10 times and 100 times in Example 9, and 120 after 500 times. In Example 10, 100% after 10 times, 110% after 100 times, 150% after 500 times, and in Comparative Example 2, 100% after 10 times, 350% after 100 times, 500% It was 1200% later.
これらの実施例8〜10および比較例2の条件および結果を表1〜表3に示す。 The conditions and results of Examples 8 to 10 and Comparative Example 2 are shown in Tables 1 to 3.
[実施例11〜13、比較例3、4]
アニロックス容量20cc/m2(150線/インチ)とした以外は、実施例1〜4と同様の方法により、印刷回数をそれぞれ1回(実施例11)、2回(実施例12)、3回(実施例13)、4回(比較例3)および8回(比較例4)として、導電膜を得た後、ICチップ実装ダイポールアンテナおよび屈曲試験用サンプルを作製し、導電膜の膜厚、電気抵抗および表面抵抗率を測定するとともに、導電膜の体積抵抗率および導電膜中のAgの割合を算出した。また、実施例1〜4と同様の方法により、ICチップ実装ダイポールアンテナの通信距離を測定するとともに、屈曲試験用サンプルの抵抗悪化率を求めた。
[Examples 11 to 13, Comparative Examples 3 and 4]
Except for an anilox capacity of 20 cc / m 2 (150 lines / inch), the number of times of printing was 1 (Example 11), 2 (Example 12), and 3 times in the same manner as in Examples 1-4. (Example 13) After obtaining a conductive film 4 times (Comparative Example 3) and 8 times (Comparative Example 4), an IC chip-mounted dipole antenna and a sample for bending test were prepared, While measuring electrical resistance and surface resistivity, the volume resistivity of the electrically conductive film and the ratio of Ag in the electrically conductive film were calculated. Further, the communication distance of the IC chip mounted dipole antenna was measured by the same method as in Examples 1 to 4, and the resistance deterioration rate of the bending test sample was obtained.
その結果、導電膜の膜厚は、実施例11では2.2μm、実施例12では3.6μm、実施例13では5.6μm、比較例3では7.5μm、比較例4では11.4μmであり、導電膜の電気抵抗は、実施例11では1.1Ω、実施例12では0.5Ω、実施例13では0.1Ω、比較例3では0.1Ω、比較例4では0.1Ωであり、導電膜の表面抵抗率は、実施例11では0.06Ω/□、実施例12では0.02Ω/□、実施例13では0.01Ω/□、比較例3では0.01Ω/□、比較例4では0.01Ω/□であった。また、導電膜の体積抵抗率は、実施例11では15.4μΩ・cm、実施例12では11.5μΩ・cm、実施例13では3.6μΩ・cm、比較例3では4.8μΩ・cm、比較例4では7.3μΩ・cmであった。また、導電膜中のAgの割合は、実施例11では28.5体積%、実施例12では38.5体積%、実施例13では49.2体積%、比較例3では54.9体積%、比較例4では70.1体積%であった。また、周波数955MHzの通信距離は、実施例11では3.9m、実施例12では4.2m、実施例13では4.5m、比較例3では4.5m、比較例4では4.7mであった。さらに、抵抗悪化率は、実施例11では10回後、100回後、500回後のいずれも100%であり、実施例12では10回後および100回後で100%、500回後で125%であり、実施例13では10回後で100%、100回後で150%、500回後で180%であり、比較例3では10回後で200%、100回後で400%、500回後で1400%であった。なお、比較例4では、10回以内に断線したため、抵抗悪化率を求めることができなかった。 As a result, the film thickness of the conductive film was 2.2 μm in Example 11, 3.6 μm in Example 12, 5.6 μm in Example 13, 7.5 μm in Comparative Example 3, and 11.4 μm in Comparative Example 4. The electrical resistance of the conductive film is 1.1Ω in Example 11, 0.5Ω in Example 12, 0.1Ω in Example 13, 0.1Ω in Comparative Example 3, and 0.1Ω in Comparative Example 4. The surface resistivity of the conductive film is 0.06Ω / □ in Example 11, 0.02Ω / □ in Example 12, 0.01Ω / □ in Example 13, 0.01Ω / □ in Comparative Example 3, and comparison. In Example 4, it was 0.01Ω / □. The volume resistivity of the conductive film was 15.4 μΩ · cm in Example 11, 11.5 μΩ · cm in Example 12, 3.6 μΩ · cm in Example 13, 4.8 μΩ · cm in Comparative Example 3, In Comparative Example 4, it was 7.3 μΩ · cm. The proportion of Ag in the conductive film was 28.5% by volume in Example 11, 38.5% by volume in Example 12, 49.2% by volume in Example 13, and 54.9% by volume in Comparative Example 3. In Comparative Example 4, it was 70.1% by volume. The communication distance at a frequency of 955 MHz was 3.9 m in Example 11, 4.2 m in Example 12, 4.5 m in Example 13, 4.5 m in Comparative Example 3, and 4.7 m in Comparative Example 4. It was. Further, the resistance deterioration rate was 100% after 10 times, 100 times, and 500 times in Example 11, and 100% after 10 times and 100 times in Example 12, and 125 after 500 times. In Example 13, 100% after 10 times, 150% after 100 times, 180% after 500 times, and in Comparative Example 3, 200% after 10 times, 400% after 100 times, 500% After 1400%. In Comparative Example 4, since the wire was disconnected within 10 times, the resistance deterioration rate could not be obtained.
これらの実施例11〜13および比較例3〜4の条件および結果を表1〜表3に示す。 Tables 1 to 3 show the conditions and results of Examples 11 to 13 and Comparative Examples 3 to 4.
[比較例5〜8]
まず、実施例1〜4で使用したAgインクに、塩化ビニルコポリマーラテックスとポリウレタンシックナーとプロピレングリコールを加えて、40質量%のAg粒子(平均粒径10nmの銀粒子)と、33.8質量%の塩化ビニルコポリマーラテックスと、2.0質量%のポリウレタンシックナーと、2.5質量%のプロピレングリコールとを含むAgインクを用意した。
[Comparative Examples 5 to 8]
First, vinyl chloride copolymer latex, polyurethane thickener and propylene glycol were added to the Ag ink used in Examples 1 to 4, and 40% by mass of Ag particles (silver particles having an average particle size of 10 nm) and 33.8% by mass. An Ag ink containing a vinyl chloride copolymer latex, 2.0% by mass of polyurethane thickener, and 2.5% by mass of propylene glycol was prepared.
このAgインクを用いた以外は、実施例1〜4と同様の方法により、印刷回数をそれぞれ1回(比較例5)、2回(比較例6)、3回(比較例7)および4回(比較例8)として、導電膜を得た後、ICチップ実装ダイポールアンテナおよび屈曲試験用サンプルを作製し、導電膜の膜厚、電気抵抗および表面抵抗率を測定するとともに、導電膜の体積抵抗率および導電膜中のAgの割合を算出した。また、実施例1〜4と同様の方法により、ICチップ実装ダイポールアンテナの通信距離を測定するとともに、屈曲試験用サンプルの抵抗悪化率を求めた。 Except for using this Ag ink, the number of times of printing was 1 time (Comparative Example 5), 2 times (Comparative Example 6), 3 times (Comparative Example 7), and 4 times in the same manner as in Examples 1 to 4. As (Comparative Example 8), after obtaining a conductive film, an IC chip-mounted dipole antenna and a bending test sample were prepared, and the film thickness, electrical resistance, and surface resistivity of the conductive film were measured, and the volume resistance of the conductive film was measured. The ratio and the ratio of Ag in the conductive film were calculated. Further, the communication distance of the IC chip mounted dipole antenna was measured by the same method as in Examples 1 to 4, and the resistance deterioration rate of the bending test sample was obtained.
その結果、導電膜の膜厚は、比較例5では1.5μm、比較例6では2.4μm、比較例7では3.6μm、比較例8では5.0μmであり、導電膜の電気抵抗は、比較例5ではオーバーロード(OL)で測定不能、比較例6では280.0Ω、比較例7では75.0Ω、比較例8では36.0Ωであり、導電膜の表面抵抗率は、比較例5ではオーバーロード(OL)で測定不能、比較例6では114.0Ω/□、比較例7では35.5Ω/□、比較例8では7.4Ω/□であった。また、導電膜の体積抵抗率は、比較例5ではオーバーロード(OL)で算出不能、比較例6では4280μΩ・cm、比較例7では1705μΩ・cm、比較例8では1140μΩ・cmであった。また、導電膜中のAgの割合は、比較例5では5.7体積%、比較例6では6.4体積%、比較例7では5.9体積%、比較例8では7.0体積%であった。また、周波数955MHzの通信距離は、比較例5では0.0m、比較例6では0.0m、比較例7では1.8m、比較例8では2.1mであった。さらに、抵抗悪化率は、比較例5ではオーバーロード(OL)で算出不能であり、比較例6〜8では10回後、100回後、500回後のいずれも100%であった。 As a result, the film thickness of the conductive film was 1.5 μm in Comparative Example 5, 2.4 μm in Comparative Example 6, 3.6 μm in Comparative Example 7, and 5.0 μm in Comparative Example 8, and the electrical resistance of the conductive film was In Comparative Example 5, measurement is impossible due to overload (OL), in Comparative Example 6 is 280.0Ω, in Comparative Example 7 is 75.0Ω, in Comparative Example 8 is 36.0Ω, and the surface resistivity of the conductive film is Comparative Example In Example 5, measurement was impossible due to overload (OL), 114.0 Ω / □ in Comparative Example 6, 35.5 Ω / □ in Comparative Example 7, and 7.4 Ω / □ in Comparative Example 8. Further, the volume resistivity of the conductive film could not be calculated by overload (OL) in Comparative Example 5, was 4280 μΩ · cm in Comparative Example 6, 1705 μΩ · cm in Comparative Example 7, and 1140 μΩ · cm in Comparative Example 8. The proportion of Ag in the conductive film was 5.7% by volume in Comparative Example 5, 6.4% by volume in Comparative Example 6, 5.9% by volume in Comparative Example 7, and 7.0% by volume in Comparative Example 8. Met. The communication distance at a frequency of 955 MHz was 0.0 m in Comparative Example 5, 0.0 m in Comparative Example 6, 1.8 m in Comparative Example 7, and 2.1 m in Comparative Example 8. Furthermore, the resistance deterioration rate could not be calculated due to overload (OL) in Comparative Example 5, and in Comparative Examples 6 to 8, all after 10 times, after 100 times, and after 500 times were 100%.
これらの比較例5〜8の条件および結果を表1〜表3に示す。 Tables 1 to 3 show the conditions and results of Comparative Examples 5 to 8.
[比較例9〜10]
実施例1〜4において得られた導電膜の代わりに、それぞれ厚さ1μm(比較例9)および3μm(比較例10)のAg箔(竹内金属箔工業株式会社製、100mm×100mm)を切断して導電膜(導電膜中のAgの割合は100%)として使用した以外は、実施例1〜4と同様の方法により、ICチップ実装ダイポールアンテナおよび屈曲試験用サンプルおよび屈曲試験用サンプルを作製し、導電膜の電気抵抗および表面抵抗率を測定するとともに、導電膜の体積抵抗率を算出した。また、実施例1〜4と同様の方法により、ICチップ実装ダイポールアンテナの通信距離を測定するとともに、屈曲試験用サンプルの抵抗悪化率を求めた。
[Comparative Examples 9 to 10]
Instead of the conductive films obtained in Examples 1 to 4, Ag foils (manufactured by Takeuchi Metal Foil Industry Co., Ltd., 100 mm × 100 mm) having a thickness of 1 μm (Comparative Example 9) and 3 μm (Comparative Example 10) were cut. The IC chip-mounted dipole antenna, the bending test sample, and the bending test sample were prepared in the same manner as in Examples 1 to 4 except that the conductive film was used as the conductive film (the ratio of Ag in the conductive film was 100%). While measuring the electrical resistance and surface resistivity of the conductive film, the volume resistivity of the conductive film was calculated. Further, the communication distance of the IC chip mounted dipole antenna was measured by the same method as in Examples 1 to 4, and the resistance deterioration rate of the bending test sample was obtained.
その結果、導電膜の電気抵抗は、比較例9では0.2Ω、比較例10では0.1Ωであり、導電膜の表面抵抗率は、比較例9では0.01Ω/□、比較例10では0.01Ω/□であった。また、導電膜の体積抵抗率は、比較例9では1.6μΩ・cm、比較例10では1.9μΩ・cmであった。また、周波数955MHzの通信距離は、比較例9では4.0m、比較例10では4.4mであった。さらに、抵抗悪化率は、比較例9では10回後で100%、100回後で200%、500回後で800%であり、比較例10では10回後で100%、100回後で150%、500回後で400%であった。 As a result, the electrical resistance of the conductive film was 0.2Ω in Comparative Example 9 and 0.1Ω in Comparative Example 10, and the surface resistivity of the conductive film was 0.01Ω / □ in Comparative Example 9 and in Comparative Example 10 It was 0.01Ω / □. The volume resistivity of the conductive film was 1.6 μΩ · cm in Comparative Example 9 and 1.9 μΩ · cm in Comparative Example 10. The communication distance at a frequency of 955 MHz was 4.0 m in Comparative Example 9 and 4.4 m in Comparative Example 10. Furthermore, the resistance deterioration rate is 100% after 10 times, 200% after 100 times, and 800% after 500 times in Comparative Example 9, and 100% after 10 times and 150% after 100 times in Comparative Example 10. %, After 500 times it was 400%.
これらの比較例9〜10の条件および結果を表1〜表3に示す。 The conditions and results of these Comparative Examples 9 to 10 are shown in Tables 1 to 3.
[比較例11〜13]
実施例1〜4において得られた導電膜の代わりに、それぞれ厚さ3μm(比較例11)、6μm(比較例12)および12μm(比較例13)のAl箔(竹内金属箔工業株式会社製、100mm×100mm)を切断して導電膜(導電膜中のAlの割合は100%)として使用した以外は、実施例1〜4と同様の方法により、ICチップ実装ダイポールアンテナおよび屈曲試験用サンプルおよび屈曲試験用サンプルを作製し、導電膜の電気抵抗および表面抵抗率を測定するとともに、導電膜の体積抵抗率を算出した。また、実施例1〜4と同様の方法により、ICチップ実装ダイポールアンテナの通信距離を測定するとともに、屈曲試験用サンプルの抵抗悪化率を求めた。
[Comparative Examples 11 to 13]
Instead of the conductive films obtained in Examples 1 to 4, Al foils with a thickness of 3 μm (Comparative Example 11), 6 μm (Comparative Example 12) and 12 μm (Comparative Example 13), respectively, manufactured by Takeuchi Metal Foil Industry Co., Ltd., 100 mm × 100 mm) was cut and used as a conductive film (the proportion of Al in the conductive film was 100%). By the same method as in Examples 1 to 4, an IC chip-mounted dipole antenna, a bending test sample, and A sample for bending test was prepared, and the electrical resistance and surface resistivity of the conductive film were measured, and the volume resistivity of the conductive film was calculated. Further, the communication distance of the IC chip mounted dipole antenna was measured by the same method as in Examples 1 to 4, and the resistance deterioration rate of the bending test sample was obtained.
その結果、導電膜の電気抵抗は、比較例11では0.2Ω、比較例12では0.2Ω、比較例13では0.2Ωであり、導電膜の表面抵抗率は、比較例11〜13のいずれも0.01Ω/□であった。また、導電膜の体積抵抗率は、比較例11では3.8μΩ・cm、比較例12では7.6μΩ・cm、比較例13では15.3μΩ・cmであった。また、周波数955MHzの通信距離は、比較例11では4.4m、比較例12では4.4m、比較例13では4.4mであった。さらに、抵抗悪化率は、比較例11では10回後で167%、100回後で633%、500回後で断線し、比較例12では10回後で100%、100回後で100%、500回後で1200%であり、比較例13では10回後は100%、100回後で100%、500回後で800%であった。 As a result, the electrical resistance of the conductive film was 0.2Ω in Comparative Example 11, 0.2Ω in Comparative Example 12, and 0.2Ω in Comparative Example 13, and the surface resistivity of the conductive film was that of Comparative Examples 11-13. Both were 0.01Ω / □. The volume resistivity of the conductive film was 3.8 μΩ · cm in Comparative Example 11, 7.6 μΩ · cm in Comparative Example 12, and 15.3 μΩ · cm in Comparative Example 13. The communication distance at a frequency of 955 MHz was 4.4 m in Comparative Example 11, 4.4 m in Comparative Example 12, and 4.4 m in Comparative Example 13. Furthermore, the resistance deterioration rate was 167% after 10 times in the comparative example 11, 633% after 100 times, and disconnected after 500 times, and the comparative example 12 was 100% after 10 times, 100% after 100 times, It was 1200% after 500 times, and in Comparative Example 13, it was 100% after 10 times, 100% after 100 times, and 800% after 500 times.
これらの比較例11〜13の条件および結果を表1〜表3に示す。 The conditions and results of these Comparative Examples 11 to 13 are shown in Tables 1 to 3.
本発明による銀導電膜を使用して形成されたICタグ用アンテナなどのRFIDタグ用アンテナを組み込んで(ICチップとアンテナからなる)インレイを製造すれば、実用的な通信距離のICタグなどのFEIDタグを製造することができる。 If an inlay (consisting of an IC chip and an antenna) is manufactured by incorporating an RFID tag antenna such as an IC tag antenna formed using the silver conductive film according to the present invention, an IC tag having a practical communication distance can be obtained. FEID tags can be manufactured.
10 基材
12 膜
12’ 導電膜
14 ダイポールアンテナ
16 ICチップ
18 粘着性剥離フィルム
20 屈曲試験用サンプル
22 柱
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