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JP5889094B2 - Superconducting wire and method of manufacturing superconducting wire - Google Patents
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JP5889094B2 - Superconducting wire and method of manufacturing superconducting wire - Google Patents

Superconducting wire and method of manufacturing superconducting wire Download PDF

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JP5889094B2
JP5889094B2 JP2012091133A JP2012091133A JP5889094B2 JP 5889094 B2 JP5889094 B2 JP 5889094B2 JP 2012091133 A JP2012091133 A JP 2012091133A JP 2012091133 A JP2012091133 A JP 2012091133A JP 5889094 B2 JP5889094 B2 JP 5889094B2
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良和 奥野
良和 奥野
英之 畠山
英之 畠山
福島 弘之
弘之 福島
裕子 早瀬
裕子 早瀬
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Furukawa Electric Co Ltd
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    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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Description

本発明は、超電導線及び超電導線の製造方法に関する。   The present invention relates to a superconducting wire and a method of manufacturing a superconducting wire.

従来から、テープ状の基板の厚み方向の一面側に、結晶軸のa軸方向又はb軸方向が基板の長手方向と平行な酸化物超電導体を主体とした超電導層が設けられた超電導線が知られている(例えば特許文献1)。   Conventionally, a superconducting wire provided with a superconducting layer mainly composed of an oxide superconductor in which the a-axis direction or the b-axis direction of the crystal axis is parallel to the longitudinal direction of the substrate on one surface side in the thickness direction of the tape-like substrate has been provided. Known (for example, Patent Document 1).

特開平3−279203号公報JP-A-3-279203

しかしながら、酸化物超電導体における結晶軸のa軸方向又はb軸方向が基板の長手方向と平行であると、不可逆歪εirrは高い(良好)ものの、超電導線が不可逆歪εirrまで歪んだ時(不可逆歪時)に臨界電流Icが大きく低下してしまう。
特に超電導線を巻回した超電導コイルでは、超電導線に歪みがある状態で使われるので、不可逆歪時に高い臨界電流Icが必要となる。不可逆歪時に臨界電流Icが大きく低下すると、超電導コイル使用時において超電導層に通電可能な電流量が制限されてしまうからである。
However, when the a-axis direction or the b-axis direction of the crystal axis in the oxide superconductor is parallel to the longitudinal direction of the substrate, the irreversible strain εirr is high (good), but the superconducting wire is distorted to the irreversible strain εirr (irreversible). The critical current Ic is greatly reduced during strain.
In particular, a superconducting coil wound with a superconducting wire is used in a state where the superconducting wire is distorted, so that a high critical current Ic is required at the time of irreversible strain. This is because if the critical current Ic is greatly reduced during irreversible strain, the amount of current that can be passed through the superconducting layer is limited when the superconducting coil is used.

本発明は上記事実に鑑みてなされたものであり、不可逆歪時において臨界電流Icの低下を抑制することができる超電導線及び超電導線の製造方法を提供することを目的とする。   The present invention has been made in view of the above facts, and an object of the present invention is to provide a superconducting wire and a method of manufacturing the superconducting wire that can suppress a decrease in the critical current Ic during irreversible strain.

本発明の上記課題は下記の手段によって解決された。
<1>テープ状の基板と、前記基板の厚み方向の一面側に設けられ、結晶軸のa軸方向又はb軸方向が前記基板の長手方向と交差するRE系超電導体(RE:希土類元素)を主体とした超電導層と、ミラー指数<100>方向又はミラー指数<010>方向が前記長手方向と交差する結晶質の酸化物を主体とした酸化物層を少なくとも1層含み、前記基板と前記超電導層との間に設けられた中間層と、を有し、前記a軸方向又は前記b軸方向と前記長手方向とのなす角αは、45度未満であり、13度以上である超電導線。
>前記角αは、18度以上である、<>に記載の超電導線。
>前記角αは、36度以下である、<又は<2>に記載の超電導線。
>前記角αは、32度以下である、<>〜<>の何れか1つに記載の超電導線。
>前記結晶軸のc軸方向と前記厚み方向とのなす角が5度以下である、<1>〜<>の何れか1つに記載の超電導線。
The above-described problems of the present invention have been solved by the following means.
<1> A tape-shaped substrate and an RE-based superconductor (RE: rare earth element) that is provided on one surface side of the substrate in the thickness direction and in which the a-axis direction or the b-axis direction of the crystal axis intersects the longitudinal direction of the substrate And at least one oxide layer mainly composed of a crystalline oxide in which the Miller index <100> direction or the Miller index <010> direction intersects the longitudinal direction, the substrate and the substrate have a, and an intermediate layer provided between the superconducting layer, wherein the angle α between the longitudinal direction and the a-axis direction or the b axis direction, is less than 45 degrees, the superconducting wire is 13 degrees or more .
< 2 > The superconducting wire according to < 1 >, wherein the angle α is 18 degrees or more.
< 3 > The superconducting wire according to < 1 > or <2> , wherein the angle α is 36 degrees or less.
< 4 > The superconducting wire according to any one of < 1 > to < 3 >, wherein the angle α is 32 degrees or less.
< 5 > The superconducting wire according to any one of <1> to < 4 >, wherein an angle formed by the c-axis direction of the crystal axis and the thickness direction is 5 degrees or less.

本発明によれば、不可逆歪時において臨界電流Icの低下を抑制することができる超電導線及び超電導線の製造方法を提供することができた。   ADVANTAGE OF THE INVENTION According to this invention, the superconducting wire which can suppress the fall of critical current Ic at the time of irreversible strain, and the manufacturing method of a superconducting wire were able to be provided.

図1は、本発明の実施形態に係る超電導線の積層構造を示す図である。FIG. 1 is a diagram showing a laminated structure of superconducting wires according to an embodiment of the present invention. 図2は、超電導線用基材2の中間層20が多層構造である場合の中間層20の層構成の一例を示した図である。FIG. 2 is a diagram showing an example of the layer configuration of the intermediate layer 20 when the intermediate layer 20 of the superconducting wire substrate 2 has a multilayer structure. 図3は、角αが45度の場合の超電導線1の積層構造の一例を各層の主体となる材料の単位格子とミラー指数で表した説明図であって、(A)は超電導線の各層をテープ基板の厚み方向から見た図であり、(B)は超電導線の各層をテープ基板の幅方向から見た図である。FIG. 3 is an explanatory diagram showing an example of the laminated structure of the superconducting wire 1 when the angle α is 45 degrees, in terms of the unit cell and the Miller index of the material that is the main component of each layer, and (A) shows each layer of the superconducting wire Is the figure which looked at the thickness direction of the tape board | substrate, (B) is the figure which looked at each layer of the superconducting wire from the width direction of the tape board | substrate. 図4は、角αが45度未満の場合の超電導線の積層構造の一例を各層の主体となる材料の単位格子とミラー指数で表した説明図であって、(A)は超電導線の各層をテープ基板の厚み方向から見た図であり、(B)は超電導線1の各層をテープ基板の幅方向から見た図である。FIG. 4 is an explanatory diagram showing an example of a laminated structure of superconducting wires when the angle α is less than 45 degrees, in terms of a unit cell and a Miller index, which are the main components of each layer, and (A) shows each layer of the superconducting wire. Is the figure which looked at from the thickness direction of the tape substrate, and (B) is the figure which looked at each layer of the superconducting wire 1 from the width direction of the tape substrate. 図5は、角αが45度未満の場合の超電導線の積層構造の図4とは別の一例を各層の主体となる材料の単位格子とミラー指数で表した説明図であって、(A)は超電導線の各層をテープ基板の厚み方向から見た図であり、(B)は超電導線の各層をテープ基板の幅方向から見た図である。FIG. 5 is an explanatory diagram showing an example different from FIG. 4 of the laminated structure of the superconducting wire when the angle α is less than 45 degrees, expressed by the unit cell and the Miller index of the material that is the main component of each layer. ) Is a view of each layer of the superconducting wire as viewed from the thickness direction of the tape substrate, and (B) is a view of each layer of the superconducting wire as viewed from the width direction of the tape substrate. 図6は、角αが45度未満の場合の超電導線の積層構造の図4及び図5とは別の一例を各層の主体となる材料の単位格子とミラー指数で表した説明図であって、(A)は超電導線の各層をテープ基板の厚み方向から見た図であり、(B)は超電導線の各層をテープ基板の幅方向から見た図である。FIG. 6 is an explanatory diagram showing an example different from FIGS. 4 and 5 of the laminated structure of the superconducting wire in the case where the angle α is less than 45 degrees, by the unit cell and the Miller index of the material that is the main component of each layer. (A) is the figure which looked at each layer of the superconducting wire from the thickness direction of the tape substrate, (B) is the figure which looked at each layer of the superconducting wire from the width direction of the tape substrate. 図7は、アシストビームの照射方向と基板との関係を示す図である。FIG. 7 is a diagram illustrating the relationship between the assist beam irradiation direction and the substrate. 図8は、角度α(°)とεirr(%)との関係をプロットしたグラフ図である。FIG. 8 is a graph plotting the relationship between the angle α (°) and εirr (%). 図9に、角度α(°)とIc(εirr)/Ic0との関係をプロットしたグラフ図である。FIG. 9 is a graph plotting the relationship between the angle α (°) and Ic (εirr) / Ic0. 図10は、角αが0度の場合の超電導線の積層構造の一例を各層の主体となる材料の単位格子とミラー指数で表した説明図であって、(A)は超電導線の各層をテープ基板の厚み方向から見た図であり、(B)は超電導線の各層をテープ基板の幅方向から見た図である。FIG. 10 is an explanatory view showing an example of a laminated structure of superconducting wires when the angle α is 0 degrees, expressed by a unit cell and a Miller index of a material that is the main component of each layer, and (A) shows each layer of the superconducting wires. It is the figure seen from the thickness direction of the tape board | substrate, (B) is the figure which looked at each layer of the superconducting wire from the width direction of the tape board | substrate.

以下、添付の図面を参照しながら、本発明の実施形態に係る超電導薄膜について超電導線を一例に挙げて具体的に説明する。なお、図中、同一又は対応する機能を有する部材(構成要素)には同じ符号を付して適宜説明を省略する。   Hereinafter, a superconducting thin film according to an embodiment of the present invention will be specifically described with reference to a superconducting wire as an example with reference to the accompanying drawings. In the drawings, members (components) having the same or corresponding functions are denoted by the same reference numerals and description thereof is omitted as appropriate.

<<超電導線の概略構成>>
図1は、本発明の実施形態に係る超電導線1の積層構造を示す図である。
図1に示すように、超電導線1は、基板10上に中間層20、超電導層30、保護層40が順に形成された積層構造を有している。また、図1における基板10と中間層20とで超電導線用基材2を構成している。
<< Schematic configuration of superconducting wire >>
FIG. 1 is a view showing a laminated structure of superconducting wires 1 according to an embodiment of the present invention.
As shown in FIG. 1, the superconducting wire 1 has a laminated structure in which an intermediate layer 20, a superconducting layer 30, and a protective layer 40 are sequentially formed on a substrate 10. Further, the substrate 10 and the intermediate layer 20 in FIG. 1 constitute the superconducting wire base material 2.

基板10は、図中矢印L方向(長手方向)に伸びるテープ状の基板(以下、テープ基板10と称す)とされており、その厚み方向の一面が成膜面(主面)となる。このテープ基板10は、低磁性の無配向金属基材や無配向セラミックス基材が用いられる。金属基材の材料としては、例えば、強度及び耐熱性に優れた、Co、Cu、Ni、Ti、Mo、Nb、Ta、W、Mn、Fe、Ag、Cr等の金属又はこれらの合金が用いられる。特に好ましいのは、耐食性及び耐熱性の点で優れているステンレス、ハステロイ(登録商標)、その他のニッケル系合金である。また、これら各種金属材料上に各種セラミックスを配してもよい。また、セラミックス基材の材料としては、例えば、MgO、SrTiO、又はイットリウム安定化ジルコニア等が用いられる。 The substrate 10 is a tape-like substrate (hereinafter referred to as a tape substrate 10) extending in the arrow L direction (longitudinal direction) in the figure, and one surface in the thickness direction is a film formation surface (main surface). The tape substrate 10 is made of a low magnetic non-oriented metal base material or non-oriented ceramic base material. As the material of the metal substrate, for example, metals such as Co, Cu, Ni, Ti, Mo, Nb, Ta, W, Mn, Fe, Ag, and Cr, which are excellent in strength and heat resistance, or alloys thereof are used. It is done. Particularly preferred are stainless steel, Hastelloy (registered trademark), and other nickel-based alloys that are excellent in corrosion resistance and heat resistance. Various ceramics may be arranged on these various metal materials. Moreover, as a material of the ceramic substrate, for example, MgO, SrTiO 3 , yttrium-stabilized zirconia, or the like is used.

中間層20は、超電導層30において高い2軸配向性を実現するために、テープ基板10と超電導層30の間に設けられる層である。このような中間層20は、例えば、熱膨張率や格子定数等の物理的な特性値が基板10と超電導層30を構成する超電導体との中間的な値を示す。また、中間層20は、単層構造であってもよく、多層構造であってもよい。ただし、中間層20が単層構造であっても多層構造であっても、酸化物を主体とした層を少なくとも1つを有する。ここで、上記及び以降から説明する「主体」とは、ある層を構成する構成成分のうち、最も多く層中に含有されている成分を表す。なお、中間層20が多層構造の場合の具体的な層構成については、その一例を図2に示す。   The intermediate layer 20 is a layer provided between the tape substrate 10 and the superconducting layer 30 in order to achieve high biaxial orientation in the superconducting layer 30. Such an intermediate layer 20 has, for example, physical values such as a coefficient of thermal expansion and a lattice constant that are intermediate values between the substrate 10 and the superconductor constituting the superconducting layer 30. Further, the intermediate layer 20 may have a single layer structure or a multilayer structure. However, regardless of whether the intermediate layer 20 has a single layer structure or a multilayer structure, the intermediate layer 20 has at least one layer mainly composed of an oxide. Here, the “main body” described above and hereinafter represents the component contained in the layer in the largest amount among the components constituting the layer. An example of a specific layer configuration when the intermediate layer 20 has a multilayer structure is shown in FIG.

図2に示すように、多層構造の一例である中間層20は、ベッド層22と、強制配向層24と、LMO層26と、キャップ層28と、を順に積層した構成となっている。   As shown in FIG. 2, the intermediate layer 20, which is an example of a multilayer structure, has a configuration in which a bed layer 22, a forced alignment layer 24, an LMO layer 26, and a cap layer 28 are sequentially stacked.

ベッド層22は、テープ基板10上(厚み方向Tの一面)に形成され、テープ基板10の構成元素が拡散するのを防止するための層である。ベッド層22の構成材料としては、GdZr7−λ(−1<λ<1、以下GZOを称す)、YAlO(イットリウムアルミネート)、YSZ(イットリア安定化ジルコニア)、Y、Gd、Al、B、Sc、Cr、REZrO、CeO、PrO、及びRE等を用いることができる。ここで、REは、単一の希土類元素又は複数の希土類元素を表す。なお、ベッド層22は、拡散防止機能とともに例えば強制配向層24の2軸配向性を向上させるなど他の機能を有していてもよい。なお、2軸配向性を向上させる機能を持たせるためには、GZOやCeO、PrO等をベッド層22の構成材料として用いることが好ましい。なお、「2軸配向性」とは、層中の結晶のc軸配向性及びa軸面内配向性が高いことを意味する。 The bed layer 22 is formed on the tape substrate 10 (one surface in the thickness direction T) and is a layer for preventing the constituent elements of the tape substrate 10 from diffusing. As the constituent material of the bed layer 22, Gd 2 Zr 2 O 7-λ (-1 <λ <1, hereinafter referred to as GZO), YAlO 3 (yttrium aluminate), YSZ (yttria stabilized zirconia), Y 2 O 3 , Gd 2 O 3 , Al 2 O 3 , B 2 O 3 , Sc 2 O 3 , Cr 2 O 3 , REZrO, CeO 2 , PrO 2 , RE 2 O 3 and the like can be used. Here, RE represents a single rare earth element or a plurality of rare earth elements. The bed layer 22 may have other functions such as improving the biaxial orientation of the forced alignment layer 24 together with the diffusion preventing function. In order to have a function of improving the biaxial orientation, it is preferable to use GZO, CeO 2 , PrO 2 or the like as a constituent material of the bed layer 22. “Biaxial orientation” means that the c-axis orientation and a-axis in-plane orientation of the crystals in the layer are high.

ベッド層22の厚みは、特に限定されないが、当該ベッド層22の機能(基板10からの金属元素の拡散抑制と強制配向層の配向性を向上)の低下を抑制するという観点から10nm以上であることが好ましく、基板10の反りを抑制するという観点から500nm以下であることが好ましい。特にコスト等の要請により厚みを薄くするという観点から、100nm以下であることがより好ましい。   The thickness of the bed layer 22 is not particularly limited, but is 10 nm or more from the viewpoint of suppressing a decrease in the function of the bed layer 22 (suppression of diffusion of metal elements from the substrate 10 and improvement of orientation of the forced alignment layer). It is preferable that the thickness is 500 nm or less from the viewpoint of suppressing warpage of the substrate 10. In particular, the thickness is more preferably 100 nm or less from the viewpoint of reducing the thickness due to a request for cost or the like.

強制配向層24は、ベッド層22上に形成され、2軸配向性を有し、超電導層30の結晶を一定の方向に配向させるための層である。強制配向層24は、例えばNbOやMgO等の結晶質材料を主体としている。また、ベッド層22と同様の材料、例えばGZOを用いることもできる。   The forced alignment layer 24 is formed on the bed layer 22 and has biaxial orientation, and is a layer for aligning the crystals of the superconducting layer 30 in a certain direction. The forced alignment layer 24 is mainly composed of a crystalline material such as NbO or MgO. Moreover, the same material as the bed layer 22, for example, GZO can also be used.

強制配向層24の膜厚は、特に限定されないが、例えば1nm以上20nm以下である。   Although the film thickness of the forced alignment layer 24 is not specifically limited, For example, they are 1 nm or more and 20 nm or less.

なお、「強制配向層」という用語は、IBAD法により形成された2軸配向性を有する層を指すものであり、IBAD法により形成された強制配向層であるか否かは、X線回折測定等により、ベッド層22が非配向か否か且つ強制配向層24となる層が2軸配向性を有しているか否かを分析することによって特定することができる。   The term “forced alignment layer” refers to a biaxially oriented layer formed by the IBAD method, and whether or not it is a forced alignment layer formed by the IBAD method is determined by X-ray diffraction measurement. Thus, it can be specified by analyzing whether the bed layer 22 is non-oriented and whether the layer to be the forced alignment layer 24 has biaxial orientation.

LMO層26は、強制配向層24とキャップ層28の間に配置され、キャップ層28の格子整合性を向上させる機能を有している。このようなLMO層26は、組成式がLaMnMO3+λ(λは酸素不定比量)で表される結晶質材料で構成された酸化物層である。なお、λの値は、特に限定されないが、例えば−1<λ<1である。 The LMO layer 26 is disposed between the forced alignment layer 24 and the cap layer 28 and has a function of improving the lattice matching of the cap layer 28. Such an LMO layer 26 is an oxide layer made of a crystalline material whose composition formula is represented by LaMnMO 3 + λ (λ is an oxygen non-stoichiometric amount). Although the value of λ is not particularly limited, for example, −1 <λ <1.

LMO層26の厚みは、特に限定されないが、LMO層26の表面粗を抑制するという観点から100nm以下であることが好ましく、製造上の観点から4nm以上であることが好ましい。具体値としては30nmが挙げられる。   The thickness of the LMO layer 26 is not particularly limited, but is preferably 100 nm or less from the viewpoint of suppressing the surface roughness of the LMO layer 26, and is preferably 4 nm or more from the viewpoint of manufacturing. A specific value is 30 nm.

キャップ層28は、LMO層26上に形成され、LMO層26を保護するとともに超電導層30との格子整合性をさらに高めるための層である。具体的には、希土類元素を含有し、かつ自己配向性を有する蛍石型結晶構造体で構成されている。この蛍石型結晶構造体は、例えばCeO及びPrOから選ばれる少なくとも1つである。また、キャップ層28は蛍石型結晶構造体を主に備えていればよく、他に不純物を含有していてもよい。 The cap layer 28 is formed on the LMO layer 26 and is a layer for protecting the LMO layer 26 and further improving lattice matching with the superconducting layer 30. Specifically, it is composed of a fluorite crystal structure containing a rare earth element and having self-orientation. This fluorite-type crystal structure is at least one selected from, for example, CeO 2 and PrO 2 . The cap layer 28 only needs to mainly include a fluorite-type crystal structure, and may further contain impurities.

キャップ層28の膜厚は、特に限定されないが、十分な配向性を得るには50nm以上が好ましく、300nm以上であればさらに好ましい。ただし、600nm を超えると成膜時間が増大するので、600nm以下とすることが好ましい。   The film thickness of the cap layer 28 is not particularly limited, but is preferably 50 nm or more, and more preferably 300 nm or more in order to obtain sufficient orientation. However, if it exceeds 600 nm, the film formation time increases, so it is preferable to set it to 600 nm or less.

なお、以上の中間層20は、省略することもできる。また、中間層20は図2に示すような多層構造でなく、単層構造であってもよい。また、多層構造の場合であっても、図2に示す中間層20は一例であり、ベッド層22、強制配向層24、LMO層26、キャップ層28の何れか1つを省略してもよいし、また新たな層を追加してもよい。   The above intermediate layer 20 can be omitted. Further, the intermediate layer 20 may have a single layer structure instead of the multilayer structure as shown in FIG. Further, even in the case of a multilayer structure, the intermediate layer 20 shown in FIG. 2 is an example, and any one of the bed layer 22, the forced alignment layer 24, the LMO layer 26, and the cap layer 28 may be omitted. In addition, new layers may be added.

次に、図1に示す超電導層30は、テープ基板10の厚み方向Tの一面側の中間層20表面に設けられ(堆積しており)、組成式がREBaCu7−λで表されるRE系超電導体を主体としている。RE系超電導体中のREは、Y,Nd,Sm,Eu,Gd,Dy,Ho,Er,Tm,YbやLuなどの単一の希土類元素又は複数の希土類元素であり、これらの中でもBaサイトと置換が起き難い等の理由でYであることが好ましい。また、λは、酸素不定比量であり、例えば0以上1以下であり、超電導転移温度が高いという観点から0に近いほど好ましい。なお、酸素不定比量は、オートクレーブ等の装置を用いて高圧酸素アニール等を行えば、λは0未満、すなわち、負の値をとることもある。 Next, the superconducting layer 30 shown in FIG. 1 is provided (deposited) on the surface of the intermediate layer 20 on one surface side in the thickness direction T of the tape substrate 10, and the composition formula is represented by REBa 2 Cu 3 O 7-λ . Mainly based on RE superconductors. RE in the RE-based superconductor is a single rare earth element or a plurality of rare earth elements such as Y, Nd, Sm, Eu, Gd, Dy, Ho, Er, Tm, Yb, and Lu, and among these, the Ba site And Y is preferable because substitution is difficult to occur. Further, λ is an oxygen nonstoichiometric amount, for example, 0 or more and 1 or less, and is preferably closer to 0 from the viewpoint that the superconducting transition temperature is high. The oxygen non-stoichiometric amount may be less than 0, that is, take a negative value when high-pressure oxygen annealing or the like is performed using an apparatus such as an autoclave.

超電導層30の膜厚は、特に限定されないが、例えば500nm以上3000nm以下である。   The film thickness of the superconducting layer 30 is not particularly limited, but is, for example, not less than 500 nm and not more than 3000 nm.

超電導層30の主体となるRE系超電導体は、原則として斜方晶の結晶構造をとる。この結晶構造では、RE系超電導体は、結晶軸としてa軸、b軸、c軸(軸長:a<b<c)を有している。ただし、RE系超電導体の酸素欠損量λによっては正方晶の結晶構造をとる場合もある。この場合、RE系超電導体は、結晶軸としてa軸及びc軸を有している(a<c)。なお、これらのa軸、b軸、c軸は、ミラー指数<100>、ミラー指数<010>、<001>で表すこともできる。   In principle, the RE superconductor, which is the main component of the superconducting layer 30, has an orthorhombic crystal structure. In this crystal structure, the RE-based superconductor has a-axis, b-axis, and c-axis (axis length: a <b <c) as crystal axes. However, depending on the oxygen deficiency λ of the RE superconductor, there may be a tetragonal crystal structure. In this case, the RE superconductor has an a axis and a c axis as crystal axes (a <c). These a-axis, b-axis, and c-axis can also be expressed by Miller index <100>, Miller index <010>, and <001>.

そして、本実施形態においては、超電導層30の主体となるRE系超電導体は、その結晶軸のa軸方向又はb軸方向がテープ基板10の長手方向Lと交差している。なぜなら、a軸方向又はb軸方向がテープ基板10の長手方向Lと平行な場合に比べて、不可逆歪時において臨界電流Icの低下が抑制されるからである。   In the present embodiment, the RE-based superconductor that is the main component of the superconducting layer 30 has the crystallographic axis a-axis direction or b-axis direction intersecting the longitudinal direction L of the tape substrate 10. This is because, compared with the case where the a-axis direction or the b-axis direction is parallel to the longitudinal direction L of the tape substrate 10, the decrease in the critical current Ic is suppressed during irreversible strain.

また、RE系超電導体のa軸方向又はb軸方向と長手方向Lとのなす角αは、45度未満となることが好ましい。なぜなら、角αが45度の場合よりも、角αが45度未満の場合の方が、中間層20の配置(ミラー指数の方向)を工夫しなければならず技術的に容易に想到できないからである。   In addition, the angle α formed by the a-axis direction or b-axis direction of the RE-based superconductor and the longitudinal direction L is preferably less than 45 degrees. This is because, when the angle α is less than 45 degrees, the arrangement of the intermediate layer 20 (the direction of the Miller index) must be devised more than when the angle α is less than 45 degrees. It is.

具体的に、角αが45度の場合は、中間層20の積層構造によっては、中間層20の各層の主体となる酸化物のミラー指数<100>方向又はミラー指数<010>方向が長手方向Lと平行であっても、RE系超電導体のa軸又はb軸と長手方向Lの交差が実現可能となる。
しかしながら、角αが45度未満の場合、中間層20の各層の主体となる酸化物のミラー指数<100>方向又はミラー指数<010>方向が長手方向Lと平行であると、RE系超電導体のa軸又はb軸と長手方向Lの交差は困難となる。
なお、酸化物の軸方向を、a軸・b軸表記でなく、ミラー指数表記にしているのは、中間層20の各層の主体となる酸化物のほとんどが立方晶であるため、a軸・b軸の区別が困難なためである。
Specifically, when the angle α is 45 degrees, the Miller index <100> direction or the Miller index <010> direction of the oxide that is the main component of each layer of the intermediate layer 20 is the longitudinal direction depending on the stacked structure of the intermediate layer 20 Even if parallel to L, the intersection of the a-axis or b-axis of the RE-based superconductor with the longitudinal direction L can be realized.
However, when the angle α is less than 45 degrees, if the Miller index <100> direction or the Miller index <010> direction of the oxide that is the main component of each layer of the intermediate layer 20 is parallel to the longitudinal direction L, the RE-based superconductor It is difficult to cross the longitudinal direction L with the a-axis or b-axis.
The reason why the oxide axial direction is expressed in Miller index not in the a-axis / b-axis notation is that most of the oxides that are main components of the intermediate layer 20 are cubic crystals, This is because it is difficult to distinguish the b-axis.

より具体的に、図3〜図6を用いて説明する。
図3は、角αが45度の場合の超電導線1の積層構造の一例を各層の主体となる材料の単位格子とミラー指数で表した説明図であって、(A)は超電導線1の各層をテープ基板10の厚み方向Tから見た図であり、(B)は超電導線1の各層をテープ基板10の幅方向から見た図である。
図4は、角αが45度未満の場合の超電導線1の積層構造の一例を各層の主体となる材料の単位格子とミラー指数で表した説明図であって、(A)は超電導線1の各層をテープ基板10の厚み方向Tから見た図であり、(B)は超電導線1の各層をテープ基板10の幅方向から見た図である。
図5は、角αが45度未満の場合の超電導線1の積層構造の図4とは別の一例を各層の主体となる材料の単位格子とミラー指数で表した説明図であって、(A)は超電導線1の各層をテープ基板10の厚み方向Tから見た図であり、(B)は超電導線1の各層をテープ基板10の幅方向から見た図である。
図6は、角αが45度未満の場合の超電導線1の積層構造の図4及び図5とは別の一例を各層の主体となる材料の単位格子とミラー指数で表した説明図であって、(A)は超電導線1の各層をテープ基板10の厚み方向Tから見た図であり、(B)は超電導線1の各層をテープ基板10の幅方向から見た図である。
図10は、角αが0度の場合の超電導線の積層構造の一例を各層の主体となる材料の単位格子とミラー指数で表した説明図であって、(A)は超電導線の各層をテープ基板の厚み方向から見た図であり、(B)は超電導線の各層をテープ基板の幅方向から見た図である。
なお、各図の上方の図は超電導線1のテープ基板10側を示し、各図の下方の図は超電導線1の超電導層30側を示す。
This will be described more specifically with reference to FIGS.
FIG. 3 is an explanatory diagram showing an example of the laminated structure of the superconducting wire 1 when the angle α is 45 degrees, in terms of the unit cell and the Miller index of the material that is the main component of each layer. It is the figure which looked at each layer from the thickness direction T of the tape board | substrate 10, (B) is the figure which looked at each layer of the superconducting wire 1 from the width direction of the tape board | substrate 10. FIG.
FIG. 4 is an explanatory diagram showing an example of the laminated structure of the superconducting wire 1 when the angle α is less than 45 degrees, in terms of the unit cell and the Miller index of the material that is the main component of each layer, and (A) is the superconducting wire 1. Is a view of each layer of FIG. 1 as viewed from the thickness direction T of the tape substrate 10, and (B) is a view of the layers of the superconducting wire 1 as viewed from the width direction of the tape substrate 10.
FIG. 5 is an explanatory diagram showing an example different from FIG. 4 of the laminated structure of the superconducting wire 1 in the case where the angle α is less than 45 degrees, in terms of the unit cell and the Miller index of the material that is the main component of each layer. (A) is a view of each layer of the superconducting wire 1 as viewed from the thickness direction T of the tape substrate 10, and (B) is a view of each layer of the superconducting wire 1 as viewed from the width direction of the tape substrate 10.
FIG. 6 is an explanatory diagram showing an example of the laminated structure of the superconducting wire 1 in the case where the angle α is less than 45 degrees, in terms of the unit cell and the Miller index of the material that is the main component of each layer. (A) is the figure which looked at each layer of superconducting wire 1 from thickness direction T of tape substrate 10, and (B) is the figure which looked at each layer of superconducting wire 1 from the width direction of tape substrate 10.
FIG. 10 is an explanatory view showing an example of a laminated structure of superconducting wires when the angle α is 0 degrees, expressed by a unit cell and a Miller index of a material that is the main component of each layer, and (A) shows each layer of the superconducting wires. It is the figure seen from the thickness direction of the tape board | substrate, (B) is the figure which looked at each layer of the superconducting wire from the width direction of the tape board | substrate.
In addition, the upper figure of each figure shows the tape substrate 10 side of the superconducting wire 1, and the lower figure of each figure shows the superconducting layer 30 side of the superconducting wire 1.

図3に示すように、中間層20がMgOを主体とした強制配向層24と、CeOを主体としたキャップ層28を有し、強制配向層24とキャップ層28の間にLMO層26を有しない場合、中間層20の各層の主体となる酸化物(MgO及びCeO)のミラー指数<100>方向又はミラー指数<010>方向が長手方向Lと平行であっても、超電導層30の主体となるRE系超電導体(REBaCu7−λ)のa軸方向又はb軸方向は長手方向Lと交差し、当該RE系超電導体のa軸方向又はb軸方向と長手方向Lとのなす角αは45度となる。
一方で、図4に示すように、中間層20がMgOを主体とした強制配向層24と、LMOを主体としたLMO層26と、CeOを主体としたキャップ層28とを有する場合、中間層20の各層の主体となる酸化物のミラー指数<100>方向又はミラー指数<010>方向を長手方向Lと交差(MgOのミラー指数<010>方向と長手方向Lとのなす角をβとする)させることで、超電導層30の主体となるRE系超電導体(REBaCu7−λ)のa軸方向又はb軸方向は長手方向Lと交差し、a軸方向又はb軸方向と長手方向Lとのなす角αは、MgOのミラー指数<010>方向と長手方向Lとのなす角βの角度と同一となり、45度未満となる。
As shown in FIG. 3, the intermediate layer 20 has a forced alignment layer 24 mainly composed of MgO and a cap layer 28 mainly composed of CeO 2 , and the LMO layer 26 is interposed between the forced alignment layer 24 and the cap layer 28. If not, even if the Miller index <100> direction or the Miller index <010> direction of the oxide (MgO and CeO 2 ) that is the main component of each layer of the intermediate layer 20 is parallel to the longitudinal direction L, the superconducting layer 30 The a-axis direction or b-axis direction of the main RE-based superconductor (REBa 2 Cu 3 O 7-λ ) intersects the longitudinal direction L, and the a-axis direction or b-axis direction and the longitudinal direction L of the RE-based superconductor. Is 45 degrees.
On the other hand, as shown in FIG. 4, when the intermediate layer 20 includes a forced alignment layer 24 mainly composed of MgO, an LMO layer 26 mainly composed of LMO, and a cap layer 28 mainly composed of CeO 2 , The Miller index <100> direction or the Miller index <010> direction of the main oxide of each layer of the layer 20 intersects the longitudinal direction L (the angle between the MgO Miller index <010> direction and the longitudinal direction L is β The a-axis direction or the b-axis direction of the RE-based superconductor (REBa 2 Cu 3 O 7-λ ) that is the main body of the superconducting layer 30 intersects the longitudinal direction L, and the a-axis direction or the b-axis direction. And the longitudinal direction L is the same as the angle β formed by the MgO Miller index <010> direction and the longitudinal direction L, and is less than 45 degrees.

ただし、図3と同様に、中間層20がMgOを主体とした強制配向層24と、CeOを主体としたキャップ層28を有し、強制配向層24とキャップ層28の間にLMO層26を有しない場合であっても、図5に示すように、中間層20の各層の主体となる酸化物(MgO及びCeO)のミラー指数<100>方向又はミラー指数<010>方向を長手方向Lと交差(MgOのミラー指数<010>方向と長手方向Lとのなす角をβとする)させることで、超電導層30の主体となるRE系超電導体(REBaCu7−λ)のa軸方向又はb軸方向は長手方向Lと交差し、a軸方向又はb軸方向と長手方向Lとのなす角αは45度−βの角度となる。 However, as in FIG. 3, the intermediate layer 20 has a forced alignment layer 24 mainly composed of MgO and a cap layer 28 mainly composed of CeO 2 , and the LMO layer 26 is interposed between the forced alignment layer 24 and the cap layer 28. 5, the Miller index <100> direction or the Miller index <010> direction of the oxide (MgO and CeO 2 ) that is the main component of each layer of the intermediate layer 20 is the longitudinal direction, as shown in FIG. RE-based superconductor (REBa 2 Cu 3 O 7-λ ) that is the main component of the superconducting layer 30 by crossing L (the angle between the MgO Miller index <010> direction and the longitudinal direction L is β). The a-axis direction or b-axis direction intersects the longitudinal direction L, and the angle α formed by the a-axis direction or b-axis direction and the longitudinal direction L is an angle of 45 ° −β.

また、図6に示すように、GZOを主体とした強制配向層24と、CeOを主体としたキャップ層28を有し、強制配向層24とキャップ層28の間にLMO層26を有しない場合、中間層20の各層の主体となる酸化物(GZO及びCeO)のミラー指数<100>方向又はミラー指数<010>方向を長手方向Lと交差(MgOのミラー指数<010>方向と長手方向Lとのなす角をβとする)させることで、超電導層30の主体となるRE系超電導体(REBaCu7−λ)のa軸方向又はb軸方向は長手方向Lと交差し、a軸方向又はb軸方向と長手方向Lとのなす角αとなる。 Further, as shown in FIG. 6, a forced alignment layer 24 mainly composed of GZO and a cap layer 28 mainly composed of CeO 2 are included, and no LMO layer 26 is formed between the forced alignment layer 24 and the cap layer 28. In this case, the Miller index <100> direction or the Miller index <010> direction of the oxide (GZO and CeO 2 ) that is the main component of each layer of the intermediate layer 20 intersects the longitudinal direction L (MgO mirror index <010> direction and longitudinal direction). By making β an angle formed with the direction L, the a-axis direction or the b-axis direction of the RE-based superconductor (REBa 2 Cu 3 O 7-λ ) that is the main component of the superconducting layer 30 intersects the longitudinal direction L. And the angle α formed by the a-axis direction or the b-axis direction and the longitudinal direction L.

なお、図10に示すように、中間層20がMgOを主体とした強制配向層24と、LMOを主体としたLMO層26と、CeOを主体としたキャップ層28とを有する場合で図4に示すように、中間層20の強制配向層24の主体となる酸化物のミラー指数<100>方向又はミラー指数<010>方向を長手方向Lと交差させない場合、超電導層30の主体となるRE系超電導体(REBaCu7−λ)のa軸方向又はb軸方向は長手方向Lと平行となる。 As shown in FIG. 10, the intermediate layer 20 includes a forced alignment layer 24 mainly composed of MgO, an LMO layer 26 mainly composed of LMO, and a cap layer 28 mainly composed of CeO 2 . As shown in FIG. 5, when the mirror index <100> direction or the mirror index <010> direction of the oxide that is the main component of the forced alignment layer 24 of the intermediate layer 20 is not intersected with the longitudinal direction L, the RE that is the main component of the superconducting layer 30 The a-axis direction or the b-axis direction of the system superconductor (REBa 2 Cu 3 O 7-λ ) is parallel to the longitudinal direction L.

以上のように、角αを45度未満にするためには、45度とする場合に比べて、中間層20が、ミラー指数<100>方向又はミラー指数<010>方向が長手方向と交差する結晶質の酸化物を主体とした酸化物層を少なくとも1層含むことが必要となる。   As described above, in order to make the angle α less than 45 degrees, the Miller index <100> direction or the Miller index <010> direction intersects the longitudinal direction of the intermediate layer 20 compared to the case where the angle α is 45 degrees. It is necessary to include at least one oxide layer mainly composed of crystalline oxide.

また、角αは13度以上であることが好ましい。角αが13度以上であれば、角αが13度未満に比べて、角度が大きくなるにつれて、不可逆歪時において臨界電流Icの低下が急激に抑制されるからである。   Further, the angle α is preferably 13 degrees or more. This is because, when the angle α is 13 degrees or more, the decrease in the critical current Ic is rapidly suppressed at the time of irreversible strain as the angle becomes larger than when the angle α is less than 13 degrees.

また、角αは18度以上であることが好ましい。角αが18度以上であれば、角αが18度未満に比べて、不可逆歪時において臨界電流Icの低下がより抑制されるからである。   Further, the angle α is preferably 18 degrees or more. This is because when the angle α is 18 degrees or more, the decrease in the critical current Ic is more suppressed during irreversible strain than when the angle α is less than 18 degrees.

ところで、上記のように角αを大きくしていくと、不可逆歪時における臨界電流Ic(εirr)は高くなるが、逆に、不可逆歪εirrの値は低下してしまう。不可逆歪εirrの値が低いと、フープ応力のために高磁場を発生することができなくなってしまう。したがって、本実施形態に係る超電導線1を特に超電導コイル等に用いる場合には、高い臨界電流Icと高い不可逆歪εirrを両立させることが求められる。   By the way, when the angle α is increased as described above, the critical current Ic (εirr) during irreversible strain increases, but conversely, the value of the irreversible strain εirr decreases. When the value of the irreversible strain εirr is low, a high magnetic field cannot be generated due to the hoop stress. Therefore, when the superconducting wire 1 according to the present embodiment is used particularly for a superconducting coil or the like, it is required to achieve both a high critical current Ic and a high irreversible strain εirr.

そこで、角αは36度以下であることが好ましい。角αが36度以下であれば、角αが36度超に比べて、角度が低くなるにつれて、不可逆歪εirrの値が急激に高くなるからである。   Therefore, the angle α is preferably 36 degrees or less. This is because if the angle α is 36 degrees or less, the value of the irreversible strain εirr increases rapidly as the angle α becomes lower than when the angle α exceeds 36 degrees.

また、角αは32度以下であることが好ましい。角αが32度以下であれば、角αが32度超に比べて、角度が低くなるにつれて、不可逆歪εirrの値がより高くなるからである。   The angle α is preferably 32 degrees or less. This is because if the angle α is 32 degrees or less, the value of the irreversible strain εirr becomes higher as the angle α is lower than when the angle α is larger than 32 degrees.

また、結晶軸のc軸方向と厚み方向Tとのなす角が5度以下であることが好ましく、結晶軸のc軸方向と厚み方向Tとが平行であることがより好ましい。超電導層30の長手方向Lに流れる電流成分を大きくすることができるからである。   Further, the angle formed by the c-axis direction of the crystal axis and the thickness direction T is preferably 5 degrees or less, and more preferably, the c-axis direction of the crystal axis and the thickness direction T are parallel. This is because the current component flowing in the longitudinal direction L of the superconducting layer 30 can be increased.

<<超電導線の製造方法>>
次に、本発明の実施形態に係る超電導線の製造方法について説明する。
<< Manufacturing method of superconducting wire >>
Next, the manufacturing method of the superconducting wire which concerns on embodiment of this invention is demonstrated.

超電導層30の主体となるRE系超電導体(REBaCu7−λ)のa軸方向又はb軸方向と長手方向Lとのなす角αを45度とする場合は、図3に示すように、MgOを主体とした強制配向層24と、CeOを主体としたキャップ層28を有し、強制配向層24とキャップ層28の間にLMO層26を有しない中間層20を形成すればよい。 When the angle α formed by the a-axis direction or the b-axis direction and the longitudinal direction L of the RE-based superconductor (REBa 2 Cu 3 O 7-λ ) which is the main body of the superconducting layer 30 is 45 degrees, it is shown in FIG. Thus, the intermediate layer 20 having the forced alignment layer 24 mainly composed of MgO and the cap layer 28 mainly composed of CeO 2 and not having the LMO layer 26 between the forced alignment layer 24 and the cap layer 28 is formed. That's fine.

超電導層30の主体となるRE系超電導体(REBaCu7−λ)のa軸方向又はb軸方向と長手方向Lとのなす角αを45度未満とする場合は、例えば図2及び図4に示す超電導線を製造するとき、以下のような製造方法がある。 When the angle α formed between the a-axis direction or the b-axis direction and the longitudinal direction L of the RE-based superconductor (REBa 2 Cu 3 O 7-λ ) which is the main body of the superconducting layer 30 is less than 45 degrees, for example, FIG. And when manufacturing the superconducting wire shown in FIG. 4, there are the following manufacturing methods.

まず、上述したテープ基板10を用意する工程を行う。   First, the step of preparing the tape substrate 10 described above is performed.

次に、テープ基板10の厚み方向Tの一面に、ベッド層22を形成する工程を行う。   Next, a step of forming the bed layer 22 on one surface of the tape substrate 10 in the thickness direction T is performed.

ベッド層22の形成方法としては、例えばMOD法、PLD法、CVD法、MOCVD法、又はスパッタ法等が挙げられる。中でも製造が容易であるという観点からスパッタ法を用いることが好ましい。   Examples of the method for forming the bed layer 22 include a MOD method, a PLD method, a CVD method, a MOCVD method, and a sputtering method. Among these, it is preferable to use a sputtering method from the viewpoint of easy manufacture.

次に、強制配向層24を形成する工程を行う。
強制配向層24(酸化物層)の形成方法としては、例えば不活性ガス(アルゴン)、酸素、又は不活性ガス(アルゴン)と酸素の混合ガス雰囲気中でIBAD法により成膜する方法が挙げられる。この強制配向層24を形成する際には、アシストイオンビームを照射する方向のベクトルのテープ基板10表面成分とテープ基板10の短手方向のベクトルとを交差させて、アシストイオンビームを照射しながら、RFスパッタ(又はイオンビームスパッタ)により蒸着源(MgO等)からはじき出された蒸着粒子を成膜面に堆積させて形成する。
具体的に、図7に示すように、テープ基板10の厚み方向T(法線方向)のベクトルをXとし、テープ基板10にアシストイオンビームを照射する方向のベクトルをYとし、このベクトルYの基板表面成分をY’とし、テープ基板10の短手方向(幅方向)のベクトルをZとしたとき、ベクトルZとベクトルY’のなす角δは0度超45度未満であることが好ましい。図4〜6に示す超電導線を形成する場合、図7に示す角δを設定して強制配向層24を形成すると、図4の場合には角βと角αは角δに対応し、図5の場合には角βは角δに、角αは角(45度−δ)に対応し、図6の場合には、角βは角(45度−δ)に、角αは角δに対応する。
また、ベクトルXとベクトルYのなす角γは、40度以上60度以下であることが好ましい。強制配向層24が高度に2軸配向するのに適しているからである。
Next, a step of forming the forced alignment layer 24 is performed.
Examples of the method for forming the forced alignment layer 24 (oxide layer) include a method of forming a film by an IBAD method in an atmosphere of an inert gas (argon), oxygen, or a mixed gas of an inert gas (argon) and oxygen. . When the forced alignment layer 24 is formed, the surface component of the tape substrate 10 in the direction in which the assist ion beam is irradiated intersects with the vector in the short direction of the tape substrate 10 while irradiating the assist ion beam. Then, vapor deposition particles ejected from a vapor deposition source (MgO or the like) by RF sputtering (or ion beam sputtering) are deposited on the film formation surface.
Specifically, as shown in FIG. 7, the vector in the thickness direction T (normal direction) of the tape substrate 10 is X, the vector in the direction in which the tape substrate 10 is irradiated with the assist ion beam is Y, and the vector Y When the substrate surface component is Y ′ and the short direction (width direction) vector of the tape substrate 10 is Z, the angle δ formed by the vector Z and the vector Y ′ is preferably more than 0 degree and less than 45 degrees. When forming the superconducting wire shown in FIGS. 4 to 6 and setting the angle δ shown in FIG. 7 to form the forced alignment layer 24, the angle β and the angle α correspond to the angle δ in the case of FIG. In the case of 5, the angle β corresponds to the angle δ, the angle α corresponds to the angle (45 degrees−δ), and in the case of FIG. 6, the angle β corresponds to the angle (45 degrees−δ), and the angle α corresponds to the angle δ. Corresponding to
The angle γ formed by the vector X and the vector Y is preferably 40 degrees or more and 60 degrees or less. This is because the forced alignment layer 24 is suitable for highly biaxial alignment.

このように強制配向層24の形成方法を工夫すれば、図4〜図6(なお、図6はGZOが強制配向層である)、強制配向層24の主体となる酸化物のミラー指数<100>方向又はミラー指数<010>方向が長手方向Lと交差し、強制配向層24以降に形成される層のLMO層26、キャップ層28及び超電導層30の主体となる材料のミラー指数<100>方向又はミラー指数<010>方向が長手方向Lと交差するようになる。   If the formation method of the forced alignment layer 24 is devised in this way, FIGS. 4 to 6 (GZO is the forced alignment layer in FIG. 6), the Miller index <100 of the oxide that is the main component of the forced alignment layer 24. > Direction or Miller index <010> direction intersects with the longitudinal direction L, and the Miller index <100> of the material mainly used for the LMO layer 26, the cap layer 28 and the superconducting layer 30 formed after the forced alignment layer 24 The direction or Miller index <010> direction intersects the longitudinal direction L.

次に、LMO層26、キャップ層28、及び超電導層30を形成する工程を行う。
これら各層の形成方法としては、テープ基板10を加熱しながら行うPLD法やRFスパッタリング法による成膜が挙げられる。
Next, a process of forming the LMO layer 26, the cap layer 28, and the superconducting layer 30 is performed.
Examples of a method for forming each of these layers include film formation by a PLD method or an RF sputtering method performed while heating the tape substrate 10.

以上の製造工程を経ることにより、本発明の実施形態に係る超電導線1が得られる。   The superconducting wire 1 which concerns on embodiment of this invention is obtained by passing through the above manufacturing process.

なお、本発明を特定の実施形態について詳細に説明したが、本発明はかかる実施形態に限定されるものではなく、本発明の範囲内にて他の種々の実施形態が可能であることは当業者にとって明らかである。   Although the present invention has been described in detail with respect to specific embodiments, the present invention is not limited to such embodiments, and various other embodiments are possible within the scope of the present invention. It is clear to the contractor.

以下に、本発明に係る超電導線及び超電導線の製造方法について、実施例により説明するが、本発明はこれら実施例により何ら限定されるものではない。   Hereinafter, the superconducting wire and the method of manufacturing the superconducting wire according to the present invention will be described with reference to examples, but the present invention is not limited to these examples.

<<実施例1−1>>
実施例1−1では、図4に示すような、超電導層/CeO/LMO/IBAD−MgO/GZO/ハステロイ金属基板の積層構造の超電導線を作製した。なお、図4では、GZOの記載は省略している。
<< Example 1-1 >>
In Example 1-1, a superconducting wire having a laminated structure of superconducting layer / CeO 2 / LMO / IBAD-MgO / GZO / Hastelloy metal substrate as shown in FIG. 4 was produced. In FIG. 4, the description of GZO is omitted.

具体的に、テープ基板10としてのハステロイ金属基板をスパッタ装置に導入し、1×10−3Paまで真空引きした。そして、GZOを蒸着源として、スパッタ法によりGZOからなるベッド層22を、約150℃において、線材搬送速度30m/h、膜厚100nmで成膜した。 Specifically, a Hastelloy metal substrate as the tape substrate 10 was introduced into a sputtering apparatus and evacuated to 1 × 10 −3 Pa. Then, the bed layer 22 made of GZO was formed by sputtering at a temperature of about 150 ° C. with a wire transport speed of 30 m / h and a film thickness of 100 nm using GZO as an evaporation source.

GZOからなるベッド層22を成膜したテープ基板10をIBAD装置に導入し、1×10−3Paまで真空引きした。そして、MgOを蒸着源として、IBAD法によりMgOからなる強制配向層24を、約150℃において、線材搬送速度80m/h、膜厚3nmで成膜した。
アシストビームの照射方向は、図7に示す、ベクトルXとベクトルYのなす角γが約45度となるようにし、ベクトルZとベクトルY’のなす角δが5度となるように調整した。なお、この際、アシストイオンビーム装置はテープ基板10の幅方向から5度を線材搬送の進行方向側に傾けて設置している。
The tape substrate 10 on which the bed layer 22 made of GZO was formed was introduced into an IBAD apparatus and evacuated to 1 × 10 −3 Pa. Then, the forced alignment layer 24 made of MgO was formed at a temperature of about 150 ° C. with a wire conveyance speed of 80 m / h and a film thickness of 3 nm by using IBAD method using MgO as a deposition source.
The assist beam irradiation direction was adjusted so that the angle γ formed by the vector X and the vector Y shown in FIG. 7 was about 45 degrees and the angle δ formed by the vector Z and the vector Y ′ was 5 degrees. At this time, the assist ion beam device is installed at an angle of 5 degrees from the width direction of the tape substrate 10 toward the traveling direction side of the wire conveyance.

次に、強制配向層24を成膜したテープ基板10をスパッタ装置に導入し、1×10−3Paまで真空引きした。そして、LMOを蒸着源として、RFスパッタ法によりLMOからなるLMO層26を、膜厚15nmで成膜した。
具体的に、RFスパッタ法によるLMO膜の蒸着は、温度約850℃、約0.5PaのArガス雰囲気で、スパッタ出力約200W、線材搬送速度40m/hの条件で行った。
Next, the tape substrate 10 on which the forced alignment layer 24 was formed was introduced into a sputtering apparatus and evacuated to 1 × 10 −3 Pa. Then, an LMO layer 26 made of LMO was formed with a film thickness of 15 nm by RF sputtering using LMO as an evaporation source.
Specifically, the LMO film was deposited by RF sputtering in an Ar gas atmosphere at a temperature of about 850 ° C. and a pressure of about 0.5 Pa under the conditions of a sputtering output of about 200 W and a wire conveyance speed of 40 m / h.

次に、LMO層26を成膜したテープ基板10をスパッタ装置に導入し、1×10−3Paまで真空引きした。そして、CeOを蒸着源として、RFスパッタ法によりCeOからなるキャップ層28を、膜厚500nmで成膜した。
具体的に、RFスパッタ法によるCeO膜の蒸着は、温度約700℃、約0.3PaのArと酸素の混合ガス雰囲気で、スパッタ出力約800W、線材搬送速度7m/hの条件で行った。
Next, the tape substrate 10 on which the LMO layer 26 was formed was introduced into a sputtering apparatus and evacuated to 1 × 10 −3 Pa. Then, the CeO 2 as an evaporation source, a cap layer 28 made of CeO 2 by RF sputtering, was formed in a thickness of 500 nm.
Specifically, the CeO 2 film was vapor-deposited by the RF sputtering method in a mixed gas atmosphere of Ar and oxygen at a temperature of about 700 ° C. and about 0.3 Pa, under the conditions of a sputtering output of about 800 W and a wire conveyance speed of 7 m / h. .

最後に、キャップ層28を成膜したテープ基板10をMOCVD装置に導入し、YBaCu7−λ(以下、YBCOと称す)を蒸着源として、MOCVD法によりYBCOからなる超電導層30を、膜厚1000nmで成膜した。
具体的に、MOCVD法によるYBCO膜の蒸着は、温度約800℃、Oガス雰囲気中において線材搬送速度10〜500m/h以下の条件で行った。
Finally, the tape substrate 10 on which the cap layer 28 is formed is introduced into an MOCVD apparatus, and a superconducting layer 30 made of YBCO is formed by MOCVD using YBa 2 Cu 3 O 7-λ (hereinafter referred to as YBCO) as an evaporation source. The film was formed with a film thickness of 1000 nm.
Specifically, the deposition of the YBCO film by the MOCVD method was performed under the conditions of a temperature of about 800 ° C. and an O 2 gas atmosphere at a wire conveyance speed of 10 to 500 m / h or less.

以上により、MgOのミラー指数<010>方向と長手方向Lとのなす角βが5度となり、YBCOのa軸方向又はb軸方向は長手方向Lと交差し、YBCOのa軸方向又はb軸方向と長手方向Lとのなす角αも5度となる実施例1−1に係る超電導線を得た。
なお、上記角度β及びαは、キャップ層であるCeO層のXRD極点図及び超電導層のXRD極点を測定することにより確認した。具体的に、CeOの(111)面の極点図を測定した。また、YBCOの(103)面の極点図を測定した。
As described above, the angle β formed by the Miller index <010> direction of MgO and the longitudinal direction L becomes 5 degrees, and the a-axis direction or b-axis direction of YBCO intersects the longitudinal direction L, and the a-axis direction or b-axis of YBCO A superconducting wire according to Example 1-1 was obtained in which the angle α formed by the direction and the longitudinal direction L was 5 degrees.
The angles β and α were confirmed by measuring the XRD pole figure of the CeO 2 layer as the cap layer and the XRD pole point of the superconducting layer. Specifically, the pole figure of the (111) plane of CeO 2 was measured. Moreover, the pole figure of the (103) plane of YBCO was measured.

<<実施例1−2〜1−9>>
次に、実施例1−2〜1−9では、実施例1−1と同様の方法で、超電導層/CeO/LMO/IBAD−MgO/GZO/ハステロイ金属基板の積層構造の超電導線を作製した。ただし、実施例1−2〜1−9では、ベクトルZとベクトルY’のなす角δがそれぞれ13、18、22.5、28、32、36、40、45度となるように調整した。これにより、MgOのミラー指数<010>方向と長手方向Lとのなす角βがそれぞれ13、18、22.5、28、32、36、40、45度となり、YBCOのa軸方向又はb軸方向は長手方向Lと交差し、YBCOのa軸方向又はb軸方向と長手方向Lとのなす角αもそれぞれ13、18、22.5、28、32、36、40、45度となる実施例1−2〜1−9に係る超電導線を得た。
<< Examples 1-2 to 1-9 >>
Next, in Examples 1-2 to 1-9, a superconducting wire having a laminated structure of a superconducting layer / CeO 2 / LMO / IBAD-MgO / GZO / Hastelloy metal substrate was produced in the same manner as in Example 1-1. did. However, in Examples 1-2 to 1-9, the angle δ formed by the vector Z and the vector Y ′ was adjusted to be 13, 18, 22.5, 28, 32, 36, 40, and 45 degrees, respectively. As a result, the angles β formed between the Miller index <010> direction of MgO and the longitudinal direction L become 13, 18, 22.5, 28, 32, 36, 40, and 45 degrees, respectively, and the a-axis direction or b-axis of YBCO The direction intersects the longitudinal direction L, and the angle α between the a-axis direction or the b-axis direction of the YBCO and the longitudinal direction L is 13, 18, 22.5, 28, 32, 36, 40, 45 degrees, respectively. Superconducting wires according to Examples 1-2 to 1-9 were obtained.

<<比較例1>>
次に、比較例1では、実施例1−1と同様の方法で、超電導層/CeO/LMO/IBAD−MgO/GZO/ハステロイ金属基板の積層構造の超電導線を作製した。ただし、比較例1では、ベクトルZとベクトルY’のなす角δが0度となるように調整した。これにより、MgOのミラー指数<010>方向と長手方向Lとのなす角βが0度となり、a軸方向又はb軸方向と長手方向Lとのなす角αも0度となる比較例2に係る超電導線を得た(図10参照)。
<< Comparative Example 1 >>
Next, in Comparative Example 1, a superconducting wire having a laminated structure of superconducting layer / CeO 2 / LMO / IBAD-MgO / GZO / Hastelloy metal substrate was produced in the same manner as in Example 1-1. However, in Comparative Example 1, the angle δ formed by the vector Z and the vector Y ′ was adjusted to be 0 degree. Thereby, the angle β formed between the Miller index <010> direction of MgO and the longitudinal direction L is 0 degree, and the angle α formed between the a-axis direction or the b-axis direction and the longitudinal direction L is also 0 degree. Such a superconducting wire was obtained (see FIG. 10).

<<実施例2−1>>
次に、実施例2−1では、図6に示すような、超電導層/CeO/IBAD−GZO/ハステロイ基板の積層構造の超電導線を作製した。
<< Example 2-1 >>
Next, in Example 2-1, a superconducting wire having a laminated structure of superconducting layer / CeO 2 / IBAD-GZO / Hastelloy substrate as shown in FIG. 6 was produced.

具体的に、テープ基板10としてのハステロイ金属基板をIBAD装置に導入し、1×10−3Paまで真空引きした。そして、GZOを蒸着源として、IBAD法によりGZO(IBAD−GZO)からなる強制配向層24を、温度200℃において、線材搬送速度5m/h、膜厚1000nmで成膜した。アシストビームの照射方向は、図7に示す、ベクトルXとベクトルYのなす角γが約55度となるようにし、ベクトルZとベクトルY’のなす角δが45度となるように調整した。なお、この際、アシストイオンビーム装置はテープ基板10の幅方向から45度進行方向側に傾けて設置している。 Specifically, a Hastelloy metal substrate as the tape substrate 10 was introduced into an IBAD apparatus and evacuated to 1 × 10 −3 Pa. Then, a forced alignment layer 24 made of GZO (IBAD-GZO) was formed at a temperature of 200 ° C. with a wire conveyance speed of 5 m / h and a film thickness of 1000 nm by IBAD method using GZO as an evaporation source. The assist beam irradiation direction was adjusted so that the angle γ between the vector X and the vector Y shown in FIG. 7 was about 55 degrees and the angle δ between the vector Z and the vector Y ′ was 45 degrees. At this time, the assist ion beam device is installed at an angle of 45 degrees from the width direction of the tape substrate 10 toward the traveling direction.

次に、強制配向層24を成膜したテープ基板10をスパッタ装置に導入し、1×10−3Paまで真空引きした。そして、CeOを蒸着源として、RFスパッタ法によりCeOからなるキャップ層28を、膜厚500nmで成膜した。具体的に、RFスパッタ法によるCeO膜の蒸着は、温度約700℃、約0.3PaのArと酸素の混合ガス雰囲気で、スパッタ出力約800W、線材搬送速度7m/hの条件で行った。 Next, the tape substrate 10 on which the forced alignment layer 24 was formed was introduced into a sputtering apparatus and evacuated to 1 × 10 −3 Pa. Then, the CeO 2 as an evaporation source, a cap layer 28 made of CeO 2 by RF sputtering, was formed in a thickness of 500 nm. Specifically, the CeO 2 film was vapor-deposited by the RF sputtering method in a mixed gas atmosphere of Ar and oxygen at a temperature of about 700 ° C. and about 0.3 Pa, under the conditions of a sputtering output of about 800 W and a wire conveyance speed of 7 m / h. .

最後に、キャップ層28を成膜したテープ基板10をMOCVD装置に導入し、YBCOを蒸着源として、MOCVD法によりYBCOからなる超電導層30を、膜厚1000nmで成膜した。
具体的に、MOCVD法によるYBCO膜の蒸着は、温度約800℃、Oガス雰囲気中において線材搬送速度10〜500m/h以下の条件で行った。
Finally, the tape substrate 10 on which the cap layer 28 was formed was introduced into an MOCVD apparatus, and a superconducting layer 30 made of YBCO was formed with a film thickness of 1000 nm by MOCVD using YBCO as an evaporation source.
Specifically, the deposition of the YBCO film by the MOCVD method was performed under the conditions of a temperature of about 800 ° C. and an O 2 gas atmosphere at a wire conveyance speed of 10 to 500 m / h or less.

以上により、IBAD−GZOのミラー指数<010>方向と長手方向Lとのなす角βが5度となり、YBCOのa軸方向又はb軸方向は長手方向Lと交差し、YBCOのa軸方向又はb軸方向と長手方向Lとのなす角αが45度となる実施例2−1に係る超電導線を得た。   As described above, the angle β formed by the mirror index <010> direction of IBAD-GZO and the longitudinal direction L becomes 5 degrees, the a-axis direction or b-axis direction of YBCO intersects the longitudinal direction L, and the a-axis direction of YBCO or A superconducting wire according to Example 2-1 was obtained in which the angle α formed by the b-axis direction and the longitudinal direction L was 45 degrees.

<<実施例2−2〜2−9>>
実施例2−2〜2−9では、実施例2−1と同様の方法で、超電導層/CeO/IBAD−GZO/ハステロイ金属基板の構造の超電導線を作製した。ただし、実施例2−2〜2−9では、ベクトルZとベクトルY’のなす角δがそれぞれ40、36、32、28、22.5、18、13、5度となるように調整した。これにより、MgOのミラー指数<010>方向と長手方向Lとのなす角βがそれぞれ13、18、22.5、28、32、36、40、45度となり、YBCOのa軸方向又はb軸方向は長手方向Lと交差し、a軸方向又はb軸方向と長手方向Lとのなす角αがそれぞれ40、36、32、28、22.5、18、13、5度となる実施例2−2〜2−9に係る超電導線を得た。
<< Examples 2-2 to 2-9 >>
In Examples 2-2 to 2-9, a superconducting wire having a structure of a superconducting layer / CeO 2 / IBAD-GZO / Hastelloy metal substrate was produced in the same manner as in Example 2-1. However, in Examples 2-2 to 2-9, the angle δ formed by the vector Z and the vector Y ′ was adjusted to be 40, 36, 32, 28, 22.5, 18, 13, and 5 degrees, respectively. As a result, the angles β formed between the Miller index <010> direction of MgO and the longitudinal direction L become 13, 18, 22.5, 28, 32, 36, 40, and 45 degrees, respectively, and the a-axis direction or b-axis of YBCO Example 2 in which the direction intersects the longitudinal direction L, and the angles α formed by the a-axis direction or the b-axis direction and the longitudinal direction L are 40, 36, 32, 28, 22.5, 18, 13, and 5 degrees, respectively. Superconducting wires according to −2 to 2-9 were obtained.

<<比較例2>>
次に、比較例2では、実施例2−1と同様の方法で、超電導層/CeO/IBAD−GZO/ハステロイ基板の構造の超電導線を作製した。ただし、比較例2では、ベクトルZとベクトルY’のなす角δが0度となるように調整した。これにより、MgOのミラー指数<010>方向と長手方向Lとのなす角βが45度となり、YBCOのa軸方向又はb軸方向と長手方向Lとのなす角αが0度となる比較例2に係る超電導線を得た。
<< Comparative Example 2 >>
Next, in Comparative Example 2, a superconducting wire having a superconducting layer / CeO 2 / IBAD-GZO / Hastelloy substrate structure was produced in the same manner as in Example 2-1. However, in Comparative Example 2, the angle δ formed by the vector Z and the vector Y ′ was adjusted to be 0 degree. As a result, the angle β between the Miller index <010> direction of MgO and the longitudinal direction L is 45 degrees, and the angle α between the a-axis direction of YBCO or the b-axis direction and the longitudinal direction L is 0 degrees. A superconducting wire according to 2 was obtained.

<実施例3>
次に、実施例3−1では、図5に示すような、超電導層/CeO/IBAD− MgO/GZO/ハステロイ金属基板の積層構造の超電導線を作製した。なお、図5では、GZOの記載は省略している。
<Example 3>
Next, in Example 3-1, a superconducting wire having a laminated structure of superconducting layer / CeO 2 / IBAD-MgO / GZO / Hastelloy metal substrate as shown in FIG. 5 was produced. In FIG. 5, the description of GZO is omitted.

具体的に、テープ基板10としてのハステロイ金属基板をスパッタ装置に導入し、1×10−3Paまで真空引きした。そして、GZOを蒸着源として、スパッタ法によりGZOからなるベッド層22を、約150℃において、線材搬送速度30m/h、膜厚100nmで成膜した。 Specifically, a Hastelloy metal substrate as the tape substrate 10 was introduced into a sputtering apparatus and evacuated to 1 × 10 −3 Pa. Then, the bed layer 22 made of GZO was formed by sputtering at a temperature of about 150 ° C. with a wire transport speed of 30 m / h and a film thickness of 100 nm using GZO as an evaporation source.

GZOからなるベッド層22を成膜したテープ基板10をIBAD装置に導入し、1×10−3Paまで真空引きした。そして、MgOを蒸着源として、IBAD法によりMgOからなる強制配向層24を、約150℃において、線材搬送速度80m/h、膜厚3nmで成膜した。アシストビームの照射方向は、図7に示す、ベクトルXとベクトルYのなす角γが約45度となるようにし、ベクトルZとベクトルY’のなす角δが40度となるように調整した。なお、この際、アシストイオンビーム装置はテープ基板10の幅方向から40度進行方向側に傾けて設置している。 The tape substrate 10 on which the bed layer 22 made of GZO was formed was introduced into an IBAD apparatus and evacuated to 1 × 10 −3 Pa. Then, the forced alignment layer 24 made of MgO was formed at a temperature of about 150 ° C. with a wire conveyance speed of 80 m / h and a film thickness of 3 nm by using IBAD method using MgO as a deposition source. The assist beam irradiation direction was adjusted so that the angle γ formed by the vector X and the vector Y shown in FIG. 7 was about 45 degrees and the angle δ formed by the vector Z and the vector Y ′ was 40 degrees. At this time, the assist ion beam device is installed at an inclination of 40 degrees from the width direction of the tape substrate 10 toward the traveling direction.

次に、強制配向層24を成膜したテープ基板10をスパッタ装置に導入し、1×10−3Paまで真空引きした。そして、CeOを蒸着源として、RFスパッタ法によりCeOからなるキャップ層28を、膜厚500nmで成膜した。
具体的に、RFスパッタ法によるCeO膜の蒸着は、温度約700℃、約0.3PaのArと酸素の混合ガス雰囲気で、スパッタ出力約800W、線材搬送速度7m/hの条件で行った。
Next, the tape substrate 10 on which the forced alignment layer 24 was formed was introduced into a sputtering apparatus and evacuated to 1 × 10 −3 Pa. Then, the CeO 2 as an evaporation source, a cap layer 28 made of CeO 2 by RF sputtering, was formed in a thickness of 500 nm.
Specifically, the CeO 2 film was vapor-deposited by the RF sputtering method in a mixed gas atmosphere of Ar and oxygen at a temperature of about 700 ° C. and about 0.3 Pa, under the conditions of a sputtering output of about 800 W and a wire conveyance speed of 7 m / h. .

最後に、キャップ層28を成膜したテープ基板10をMOCVD装置に導入し、YBCOを蒸着源として、MOCVD法によりYBCOからなる超電導層30を、膜厚1000nmで成膜した。
具体的に、MOCVD法によるYBCO膜の蒸着は、温度約800℃、Oガス雰囲気中において線材搬送速度10〜500m/h以下の条件で行った。
Finally, the tape substrate 10 on which the cap layer 28 was formed was introduced into an MOCVD apparatus, and a superconducting layer 30 made of YBCO was formed with a film thickness of 1000 nm by MOCVD using YBCO as an evaporation source.
Specifically, the deposition of the YBCO film by the MOCVD method was performed under the conditions of a temperature of about 800 ° C. and an O 2 gas atmosphere at a wire conveyance speed of 10 to 500 m / h or less.

以上により、IBAD−MgOのミラー指数<010>方向と長手方向Lとのなす角βが40度となり、YBCOのa軸方向又はb軸方向は長手方向Lと交差し、YBCOのa軸方向又はb軸方向と長手方向Lとのなす角αが5度となる実施例2−1に係る超電導線を得た。 Thus, the angle β formed by the mirror index <010> direction of IBAD-MgO and the longitudinal direction L is 40 degrees, the a-axis direction or b-axis direction of YBCO intersects the longitudinal direction L, and the a-axis direction of YBCO or A superconducting wire according to Example 2-1 was obtained in which the angle α formed by the b-axis direction and the longitudinal direction L was 5 degrees.

<<実施例3−2〜3−9>>
実施例3−2〜3−9では、実施例3−1と同様の方法で、超電導層/CeO/IBAD− MgO/GZO/ハステロイ金属基板の構造の超電導線を作製した。ただし、実施例3−2〜3−9では、ベクトルZとベクトルY’のなす角δがそれぞれ32、27、22.5、17、13、9、5、0度となるように調整した。これにより、MgOのミラー指数<010>方向と長手方向Lとのなす角βがそれぞれ32、27、22.5、17、13、9、5、0度となり、YBCOのa軸方向又はb軸方向は長手方向Lと交差し、YBCOのa軸方向又はb軸方向と長手方向Lとのなす角αがそれぞれ13、18、22.5、28、32、36、40、45度となる実施例3−2〜3−9に係る超電導線を得た。
<< Examples 3-2 to 3-9 >>
In Examples 3-2 to 3-9, a superconducting wire having a structure of superconducting layer / CeO 2 / IBAD-MgO / GZO / Hastelloy metal substrate was produced in the same manner as in Example 3-1. However, in Examples 3-2 to 3-9, the angle δ formed by the vector Z and the vector Y ′ was adjusted to 32, 27, 22.5, 17, 13, 9, 5, and 0 degrees, respectively. As a result, the angles β formed between the Miller index <010> direction of MgO and the longitudinal direction L are 32, 27, 22.5, 17, 13, 9, 5, and 0 degrees, respectively, and the a-axis direction or the b-axis of YBCO The direction intersects the longitudinal direction L, and the angle α between the ab direction or the b-axis direction of the YBCO and the longitudinal direction L is 13, 18, 22.5, 28, 32, 36, 40, 45 degrees, respectively. Superconducting wires according to Examples 3-2 to 3-9 were obtained.

<<比較例3>>
次に、比較例3では、実施例3−1と同様の方法で、超電導層/CeO/IBAD− MgO/GZO/ハステロイ金属基板の構造の超電導線を作製した。ただし、比較例3では、ベクトルZとベクトルY’のなす角δが45度となるように調整した。これにより、MgOのミラー指数<010>方向と長手方向Lとのなす角βが45度となり、YBCOのa軸方向又はb軸方向と長手方向Lとのなす角αが0度となる比較例3に係る超電導線を得た。
<< Comparative Example 3 >>
Next, in Comparative Example 3, a superconducting wire having a structure of superconducting layer / CeO 2 / IBAD-MgO / GZO / Hastelloy metal substrate was produced in the same manner as in Example 3-1. However, in Comparative Example 3, the angle δ formed by the vector Z and the vector Y ′ was adjusted to be 45 degrees. As a result, the angle β between the Miller index <010> direction of MgO and the longitudinal direction L is 45 degrees, and the angle α between the a-axis direction of YBCO or the b-axis direction and the longitudinal direction L is 0 degrees. 3 was obtained.

<<評価>>
各実施例及び比較例の超電導線に対して、Ic-歪特性を測定し、εirr(%)を評価した。また、ε(歪)=εirr(%)のときのIc値をIc(εirr)と定義し、Ic(εirr)を評価して、歪前(ε(歪)=0)のときのIc0で割算した値を求めた。このとき、サンプルの超電導線の長さを4cmとし、電圧端子間を1cmとし、超電導線の長手方向に引っ張りながらIc-歪特性を測定した。超電導線に歪ゲージを直接貼り付け、液体窒素温度において歪を測定した。
ここで、Ic-歪特性は次のようにして測定した。始めに歪なしのIc(Ic0)を測定した。次に、荷重をかけることにより歪印加状態でのIc測定、および、歪測定を行った。その後、荷重を除荷し、荷重なしの状態で再度Ic測定を行い、始めに測定したIc0と同じかどうか調べた。更に、荷重を増やしてIc測定、および、歪測定を行った後、荷重を除荷し、荷重なしの状態でIc測定を行い、始めに測定したIc0と同じかどうか調べた。このように、荷重をかけて測定した後、荷重を除荷する工程を繰り返し、徐々に荷重を増やしていくことでIc-歪特性を得た。
なお、除荷後に荷重なしの状態で測定したIc値が始めに測定したIc0よりも小さくなったときの最小の歪をεirrとした。
<< Evaluation >>
The Ic-strain characteristics were measured for the superconducting wires of each Example and Comparative Example, and εirr (%) was evaluated. Further, the Ic value when ε (strain) = εirr (%) is defined as Ic (εirr), and Ic (εirr) is evaluated and divided by Ic0 when before strain (ε (strain) = 0). The calculated value was obtained. At this time, the length of the sample superconducting wire was 4 cm, the voltage terminal was 1 cm, and the Ic-strain characteristics were measured while pulling in the longitudinal direction of the superconducting wire. A strain gauge was directly attached to the superconducting wire, and the strain was measured at liquid nitrogen temperature.
Here, the Ic-strain characteristic was measured as follows. First, Ic (Ic0) without distortion was measured. Next, by applying a load, Ic measurement and strain measurement were performed in a strain applied state. Thereafter, the load was removed, and Ic measurement was performed again with no load, and it was checked whether it was the same as the first measured Ic0. Furthermore, after increasing the load and performing Ic measurement and strain measurement, the load was unloaded, Ic measurement was performed without a load, and it was examined whether it was the same as Ic0 measured first. Thus, after applying the load and measuring, the process of unloading the load was repeated, and Ic-strain characteristics were obtained by gradually increasing the load.
The minimum strain when the Ic value measured without load after unloading was smaller than the Ic0 measured first was defined as εirr.

各εirr(%)とIc(εirr)/Ic0の評価結果をまとめたものを表1に示す。また、図8に、上記評価結果に基づいて角度α(°)とεirr(%)との関係をプロットしたグラフを示す。さらに、図9に、上記評価結果に基づいて角度α(°)とIc(εirr)/Ic0との関係をプロットしたグラフを示す。   Table 1 summarizes the evaluation results of each εirr (%) and Ic (εirr) / Ic0. FIG. 8 is a graph plotting the relationship between the angle α (°) and εirr (%) based on the evaluation result. Furthermore, FIG. 9 shows a graph in which the relationship between the angle α (°) and Ic (εirr) / Ic0 is plotted based on the evaluation result.

以上の表1及び図9に示す評価結果から、YBCOのa軸方向又はb軸方向がテープ基板10の長手方向Lと交差する、言い換えれば角αが0度超であれば、Ic(εirr)/Ic0が高くなることが分かった。すなわち、不可逆歪時において臨界電流Ic(εirr)の低下を抑制することができる超電導線が得られていることが分かった。   From the evaluation results shown in Table 1 and FIG. 9, if the a-axis direction or b-axis direction of YBCO intersects the longitudinal direction L of the tape substrate 10, in other words, if the angle α is greater than 0 degrees, Ic (εirr) / Ic0 was found to be high. That is, it was found that a superconducting wire capable of suppressing a decrease in the critical current Ic (εirr) during irreversible strain was obtained.

また、角αは13度以上であることが好ましいことが分かった。角αが13度以上であれば、角αが13度未満に比べて、角度が大きくなるにつれて、Ic(εirr)/Ic0が急激に高くなるからである。   Further, it has been found that the angle α is preferably 13 degrees or more. This is because if the angle α is 13 degrees or more, Ic (εirr) / Ic0 increases abruptly as the angle becomes larger than when the angle α is less than 13 degrees.

また、角αは18度以上であることが好ましいことが分かった。角αが18度以上であれば、角αが18度未満に比べて、Ic(εirr)/Ic0がより高くなるからである。   Further, it has been found that the angle α is preferably 18 degrees or more. This is because if the angle α is 18 degrees or more, Ic (εirr) / Ic0 is higher than that when the angle α is less than 18 degrees.

また、以上の表1及び図8に示す評価結果から、角αは36度以下であることが好ましいことが分かった。角αが36度以下であれば、角αが36度超に比べて、角度が低くなるにつれて、εirrが急激に高くなるからである。   Moreover, it turned out that it is preferable that the angle (alpha) is 36 degrees or less from the evaluation result shown in the above Table 1 and FIG. This is because if the angle α is 36 degrees or less, εirr increases rapidly as the angle decreases as compared to the angle α exceeding 36 degrees.

また、角αは32度以下であることが好ましいことが分かった。角αが32度以下であれば、角αが32度超に比べて、角度が低くなるにつれて、不可逆歪εirrの値がより高くなるからである。   Moreover, it turned out that it is preferable that the angle (alpha) is 32 degrees or less. This is because if the angle α is 32 degrees or less, the value of the irreversible strain εirr becomes higher as the angle α is lower than when the angle α is larger than 32 degrees.

1 超電導線
10 テープ基板(基板)
20 中間層
24 強制配向層(酸化物層)
26 LMO層(酸化物層)
28 キャップ層(酸化物層)
30 超電導層
1 Superconducting wire 10 Tape substrate (substrate)
20 Intermediate layer 24 Forced orientation layer (oxide layer)
26 LMO layer (oxide layer)
28 Cap layer (oxide layer)
30 Superconducting layer

Claims (5)

テープ状の基板と、
前記基板の厚み方向の一面側に設けられ、結晶軸のa軸方向又はb軸方向が前記基板の長手方向と交差するRE系超電導体(RE:希土類元素)を主体とした超電導層と、
ミラー指数<100>方向又はミラー指数<010>方向が前記長手方向と交差する結晶質の酸化物を主体とした酸化物層を少なくとも1層含み、前記基板と前記超電導層との間に設けられた中間層と、
を有し、
前記a軸方向又は前記b軸方向と前記長手方向とのなす角αは、45度未満であり、13度以上である超電導線。
A tape-shaped substrate;
A superconducting layer mainly composed of an RE-based superconductor (RE: rare earth element) provided on one surface side in the thickness direction of the substrate and having an a-axis direction or a b-axis direction of a crystal axis intersecting a longitudinal direction of the substrate;
Including at least one oxide layer mainly composed of crystalline oxide whose Miller index <100> direction or Miller index <010> direction intersects the longitudinal direction, and is provided between the substrate and the superconducting layer. Intermediate layer,
I have a,
An angle α formed by the a-axis direction or the b-axis direction and the longitudinal direction is less than 45 degrees and is 13 degrees or more .
前記角αは、18度以上である、
請求項に記載の超電導線。
The angle α is 18 degrees or more.
The superconducting wire according to claim 1 .
前記角αは、36度以下である、
請求項1又は請求項2に記載の超電導線。
The angle α is 36 degrees or less.
The superconducting wire according to claim 1 or 2 .
前記角αは、32度以下である、
請求項〜請求項の何れか1項に記載の超電導線。
The angle α is 32 degrees or less.
Superconducting wire according to any one of claims 1 to 3.
前記結晶軸のc軸方向と前記厚み方向とのなす角が5度以下である、
請求項1〜請求項の何れか1項に記載の超電導線。
The angle formed by the c-axis direction of the crystal axis and the thickness direction is 5 degrees or less.
The superconducting wire according to any one of claims 1 to 4 .
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