JP5925108B2 - Pressure contact type semiconductor device and method of manufacturing electrode member used therefor - Google Patents
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本発明は、圧接型半導体装置及びそれに用いる電極部材の製造方法に関する。 The present invention relates to a pressure contact type semiconductor device and a method of manufacturing an electrode member used therefor .
従来、半導体装置として、基板等に実装された半導体素子がワイヤを介して給電体に接続されているものが知られている。また、半導体素子の表裏両面を電極部材で挟持し、該電極部材を加圧することにより該半導体素子に圧接させる圧接型半導体装置も知られている。 Conventionally, a semiconductor device in which a semiconductor element mounted on a substrate or the like is connected to a power feeder via a wire is known. There is also known a pressure contact type semiconductor device in which both front and back surfaces of a semiconductor element are sandwiched between electrode members, and the electrode members are pressed to be brought into pressure contact with the semiconductor elements.
前記圧接型半導体装置では、前記電極部材は前記半導体素子に面接触により通電すると考えられるが、実際には該電極部材の表面の微小突起による点接触の集合となっている。この結果、前記圧接型半導体装置では、前記電極部材の表面状態によっては前記半導体素子に対する接触が不均一となり、局所的に電流が集中するとその部分にジュール熱が発生して該半導体素子が破壊されるという問題がある。 In the pressure-contact type semiconductor device, the electrode member is considered to be energized by surface contact with the semiconductor element, but in reality, it is a set of point contacts due to minute protrusions on the surface of the electrode member. As a result, in the pressure contact type semiconductor device, contact with the semiconductor element becomes non-uniform depending on the surface state of the electrode member, and when current is concentrated locally, Joule heat is generated in the part and the semiconductor element is destroyed. There is a problem that.
そこで、前記問題を解決するために、前記電極部材の表面に規則的に凹凸面を設け、局所的に電流が集中することを防止するようにした圧接型半導体装置が提案されている（例えば、特許文献１参照）。 Therefore, in order to solve the above problem, a pressure contact type semiconductor device has been proposed in which irregularities are regularly provided on the surface of the electrode member to prevent current from being concentrated locally (for example, Patent Document 1).
しかしながら、前記電極部材の表面に規則的に凹凸面を設けた圧接型半導体装置では、局所的な電流の集中を十分に防止することができないという不都合がある。 However, in the pressure contact type semiconductor device in which the irregular surface is regularly provided on the surface of the electrode member, there is a disadvantage that local current concentration cannot be sufficiently prevented.
そこで、本発明は、かかる不都合を解消して、電極部材と半導体素子との間の局所的な電流の集中を確実に防止することができる圧接型半導体装置を提供することを目的とする。 SUMMARY OF THE INVENTION Accordingly, an object of the present invention is to provide a pressure contact type semiconductor device that can eliminate such inconvenience and reliably prevent local current concentration between an electrode member and a semiconductor element.
本発明者らは、前記電極部材の表面に規則的に凹凸面を設けた圧接型半導体装置では、局所的な電流の集中を十分に防止することができない理由について、鋭意検討を重ねた。その結果、凸部が前記電極部材の表面全体に存在すると、一見凸部当たりの電流値が小さく分散され有利であるかに思われるが、実際には１つの凸部にかかる荷重が小さくなり、これが電流の分散に不具合をもたらすことを知見した。 The inventors of the present invention have made extensive studies on the reason why local current concentration cannot be sufficiently prevented in a press-contact type semiconductor device in which irregular surfaces are regularly provided on the surface of the electrode member. As a result, when the convex portion is present on the entire surface of the electrode member, it seems that the current value per convex portion is seemingly dispersed and advantageous, but the load applied to one convex portion is actually reduced, It has been found that this causes problems in current distribution.
すなわち、前記凸部は前記半導体素子の表面に圧接されることにより、該表面に形成されている酸化被膜を破壊、貫通することによりその部分の接触抵抗を低減して、該半導体素子と導通を確保することができる。ところが、荷重が不足して前記凸部が前記酸化被膜を十分に貫通することができないと、電流の流れやすさが不均一になる。荷重を大きくすれば前記凸部に前記酸化被膜を貫通させることが可能になるが、荷重が過大になると前記半導体素子を破壊する虞があり、荷重の調整が困難になる。 That is, the convex portion is pressed against the surface of the semiconductor element, thereby destroying and penetrating the oxide film formed on the surface, thereby reducing the contact resistance of the portion and conducting the semiconductor element. Can be secured. However, if the load is insufficient and the convex portion cannot sufficiently penetrate the oxide film, the ease of current flow becomes uneven. If the load is increased, the oxide film can be passed through the convex portion. However, if the load is excessive, the semiconductor element may be destroyed, and the adjustment of the load becomes difficult.
そこで、本発明者らは、前記知見に基づいてさらに検討を重ね、本発明に到達した。本発明は、前記目的を達成するために、半導体素子と、加圧部材と、該加圧部材により該半導体素子の表面に圧接されて通電可能な状態とされる電極部材とを備える圧接型半導体装置において、該電極部材は、該半導体素子の表面に圧接される側の面に均一に配置され、該半導体素子の表面に形成された酸化被膜を貫通可能な複数の錐形状の凸部と、該凸部を囲繞して形成された平面部とを備えることを特徴とする。 Therefore, the present inventors have further studied based on the above findings and have reached the present invention. In order to achieve the above object, the present invention provides a pressure contact type semiconductor comprising a semiconductor element, a pressure member, and an electrode member that is pressed against the surface of the semiconductor element by the pressure member to be energized. In the apparatus, the electrode member is uniformly disposed on a surface pressed against the surface of the semiconductor element, and a plurality of cone-shaped convex portions that can penetrate an oxide film formed on the surface of the semiconductor element; And a flat portion formed surrounding the convex portion.
本発明の圧接型半導体装置において、前記電極部材は、前記半導体素子の表面に圧接される側の面に均一に配置された複数の錐形状の凸部と、該凸部を囲繞して形成された平面部とを備えており、前記凸部は前記半導体素子の表面の酸化被膜を貫通可能に形成されている。 In the press contact type semiconductor device of the present invention, the electrode member is formed by surrounding a plurality of cone-shaped protrusions uniformly disposed on a surface on the side pressed against the surface of the semiconductor element. The convex portion is formed so as to be able to penetrate the oxide film on the surface of the semiconductor element.
ここで、前記凸部はその周囲が前記平面部に囲繞されているので、前記電極部材の表面に規則的に凹凸面を設ける場合に比較して単位面積当たりの数が少なく、該凸部１つ当たりの荷重が大きくなる。従って、前記凸部は確実に前記酸化被膜を貫通することができる。また、前記平面部は前記凸部が前記酸化被膜を貫通する際のストッパーとして作用し、該凸部の前記半導体素子への侵入を抑制する。従って、前記凸部が前記半導体素子に過度に侵入することによる該半導体素子の破壊を防止することができる。 Here, since the periphery of the convex portion is surrounded by the flat portion, the number per unit area is small compared to the case where the irregular surface is regularly provided on the surface of the electrode member. The load per hit increases. Therefore, the convex portion can surely penetrate the oxide film. The planar portion acts as a stopper when the convex portion penetrates the oxide film, and suppresses the penetration of the convex portion into the semiconductor element. Accordingly, it is possible to prevent the semiconductor element from being broken due to the protrusions entering the semiconductor element excessively.
この結果、本発明の圧接型半導体装置によれば、より小さな荷重で個々の前記凸部が確実に前記酸化被膜を貫通するので、前記電極部材と前記半導体素子との導通を確保することができ、該半導体素子に均一に電流を供給することができる。
本発明の圧接型半導体装置において、前記凸部の錐形状は、円錐形状でもよく角錐形状であってもよい。前記凸部は錐形状であることにより、その先端部が鋭利であるので前記酸化被膜を有利に貫通することができる。また、前記凸部は錐形状であることによりその基部ほど断面積が大であり、前記半導体素子に対して侵入するほど抵抗が大になるので、過度の侵入を抑制することができる。また、荷重に偏りが発生した場合、該荷重を均一化する作用を得ることができる。
As a result, according to the press-contact type semiconductor device of the present invention, each of the convex portions reliably penetrates the oxide film with a smaller load, so that conduction between the electrode member and the semiconductor element can be ensured. The current can be supplied uniformly to the semiconductor element.
In the press-contact type semiconductor device of the present invention, the cone shape of the convex portion may be a cone shape or a pyramid shape. Since the convex portion has a conical shape, the tip end portion thereof is sharp, so that the oxide film can be advantageously penetrated. Moreover, since the convex portion has a conical shape, the base portion thereof has a larger cross-sectional area, and the resistance increases as it penetrates into the semiconductor element, so that excessive penetration can be suppressed. Further, when the load is uneven, it is possible to obtain an effect of making the load uniform.
また、本発明の圧接型半導体装置において、前記凸部は相互に１０〜５００μｍの中心間距離を存して均一に配置されていることが好ましい。前記凸部の中心間距離が１０μｍ未満では、該凸部１つ当たりの荷重を十分に大きくすることができないことがあり、前記平面部がストッパーとして十分に作用しないことがある。また、前記凸部の中心間距離が５００μｍ（０．５ｍｍ）を超えると、前記半導体素子に均一に電流を供給する作用が十分に得られないことがある。 In the press contact type semiconductor device of the present invention, it is preferable that the convex portions are uniformly arranged with a center-to-center distance of 10 to 500 μm. When the distance between the centers of the convex portions is less than 10 μm, the load per convex portion may not be sufficiently increased, and the flat portion may not sufficiently function as a stopper. In addition, when the distance between the centers of the protrusions exceeds 500 μm (0.5 mm), there may be a case where a function of uniformly supplying current to the semiconductor element cannot be obtained sufficiently.
また、本発明の圧接型半導体装置に用いる前記電極部材の製造方法は、該凸部の表面形状に沿う形状の凹部を備える鋳型を用いて、電鋳法により形成することを特徴とする。前記電極部材は、前記電鋳法により形成されることにより、前記凸部の形状が微細であってもその形状について良好な再現性を容易に得ることができる。 Further, the manufacturing method of the electrode member used in the pressure-contact type semiconductor device of the present invention, by using a mold having a recess shape along the surface shape of the convex portion, and forming by electroforming. By forming the electrode member by the electroforming method, it is possible to easily obtain good reproducibility of the shape even if the shape of the convex portion is fine.
次に、添付の図面を参照しながら本発明の実施の形態についてさらに詳しく説明する。 Next, embodiments of the present invention will be described in more detail with reference to the accompanying drawings.
図１に示すように、本実施形態の圧接型半導体装置１は、半導体素子２と、半導体素子２の表裏両面に配設される加圧部材３と、加圧部材３により半導体素子２の表面に圧接されて通電可能な状態とされる電極部材４とを備える。 As shown in FIG. 1, the press contact type semiconductor device 1 of the present embodiment includes a semiconductor element 2, a pressure member 3 disposed on both front and back surfaces of the semiconductor element 2, and the surface of the semiconductor element 2 by the pressure member 3. And an electrode member 4 which is brought into a state where it can be energized.
電極部材４は、例えば銅等の良導性金属からなり、加圧部材３の半導体素子２に対向する面に、加圧部材３と一体的に設けられている。電極部材４は、半導体素子２の表面に圧接される側の面に均一に配置された複数の凸部５と、凸部５を囲繞して形成された平面部６とを備えている。 The electrode member 4 is made of a highly conductive metal such as copper, and is provided integrally with the pressure member 3 on the surface of the pressure member 3 facing the semiconductor element 2. The electrode member 4 includes a plurality of convex portions 5 that are uniformly arranged on a surface that is in pressure contact with the surface of the semiconductor element 2, and a flat portion 6 that is formed to surround the convex portions 5.
凸部５は、図２に示すように、相互に中心間距離Ｄを存して均一に形成されており、中心間距離Ｄは１０〜５００μｍの範囲で適宜調整することができる。このとき、電極部材４の表面の凸部５が形成されている部分以外は全て、凸部５を囲繞する平面部６となっている。また、凸部５は、図３（ａ）に拡大して示すように正四角錐形状を備えており、図３（ｂ）に示すようにその１辺の長さｄは例えば１０μｍであり、その高さｈは例えば５μｍである。 As shown in FIG. 2, the convex portions 5 are uniformly formed with a center distance D between them, and the center distance D can be appropriately adjusted within a range of 10 to 500 μm. At this time, all the portions other than the portions where the convex portions 5 on the surface of the electrode member 4 are formed are the flat portions 6 surrounding the convex portions 5. The convex portion 5 has a regular quadrangular pyramid shape as shown in an enlarged view in FIG. 3A, and the length d of one side thereof is, for example, 10 μm as shown in FIG. The height h is 5 μm, for example.
前記形状の凸部５を備える電極部材４は、例えば、凸部５の表面形状に沿う形状の凹部を備える鋳型を用いて、電鋳法により形成することができる。 The electrode member 4 including the convex portion 5 having the shape can be formed by electroforming using, for example, a mold including a concave portion having a shape along the surface shape of the convex portion 5.
次に、本実施形態の圧接型半導体装置１の作用について説明する。 Next, the operation of the pressure contact type semiconductor device 1 of the present embodiment will be described.
本実施形態の圧接型半導体装置１は、図１に矢示するように、加圧部材３により電極部材４を加圧することにより、電極部材４の凸部５が形成されている面を半導体素子２に圧接する。このようにすると、図４に示すように、正四角錐形状で先端が鋭利になっている凸部５が半導体素子２の表面に形成されている酸化被膜２ａを貫通して、電極部材４と半導体素子２との導通が確保される。 In the press-contact type semiconductor device 1 of the present embodiment, as shown by an arrow in FIG. 1, the surface of the electrode member 4 on which the convex portion 5 is formed is formed on the surface of the semiconductor element by pressing the electrode member 4 with the pressing member 3. 2 is pressed. In this way, as shown in FIG. 4, the convex part 5 having a regular quadrangular pyramid shape with a sharp tip penetrates the oxide film 2a formed on the surface of the semiconductor element 2, and the electrode member 4 and the semiconductor are formed. Conduction with the element 2 is ensured.
このとき、複数の凸部５は相互に前記中心間距離Ｄを存して均一に形成されており、その周囲が平面部６に囲繞されている。従って、電極部材４の表面に規則的に凹凸面を設ける場合に比較して単位面積当たりの凸部５の数が少なく、凸部５の１つ当たりの荷重が大きくなるので、凸部５は確実に酸化被膜２ａを貫通することができる。また、平面部６は凸部５が酸化被膜２ａを貫通する際のストッパーとして作用し、凸部５の半導体素子２への過度の侵入を抑制するので、半導体素子２の破壊を防止することができる。 At this time, the plurality of convex portions 5 are uniformly formed with the distance D between the centers therebetween, and the periphery thereof is surrounded by the flat portion 6. Therefore, since the number of the convex parts 5 per unit area is small and the load per one convex part 5 becomes large compared with the case where the irregular surface is regularly provided on the surface of the electrode member 4, the convex parts 5 The oxide film 2a can be reliably penetrated. Further, since the flat portion 6 acts as a stopper when the convex portion 5 penetrates the oxide film 2a and suppresses excessive penetration of the convex portion 5 into the semiconductor element 2, it is possible to prevent the semiconductor element 2 from being broken. it can.
この結果、本実施形態の圧接型半導体装置１によれば、荷重の調整に懸念することなく、半導体素子２に均一に電流を供給することができる。 As a result, according to the press contact type semiconductor device 1 of the present embodiment, a current can be supplied uniformly to the semiconductor element 2 without concern about adjustment of the load.
尚、本実施形態では、凸部５を正四角錐形状としているが、凸部５は円錐状であっても、正四角錐以外の角錐状であってもよく、さらに酸化被膜２ａを貫通できる形状であればどのような形状であってもよい。 In the present embodiment, the convex portion 5 has a regular quadrangular pyramid shape. However, the convex portion 5 may have a conical shape or a pyramid shape other than the regular quadrangular pyramid, and has a shape that can penetrate the oxide film 2a. Any shape may be used.
１…圧接型半導体装置、 ２…半導体素子、 ２ａ…酸化被膜、 ３…加圧部材、 ４…電極部材、 ５…凸部、 ６…平面部。 DESCRIPTION OF SYMBOLS 1 ... Pressure-contact type semiconductor device, 2 ... Semiconductor element, 2a ... Oxide film, 3 ... Pressure member, 4 ... Electrode member, 5 ... Convex part, 6 ... Plane part.
Claims (3)
該電極部材は、該半導体素子の表面に圧接される側の面に均一に配置され、該半導体素子の表面に形成された酸化被膜を貫通可能な複数の錐形状の凸部と、
該凸部を囲繞して形成された平面部とを備えることを特徴とする圧接型半導体装置。 In a pressure-contact type semiconductor device comprising a semiconductor element, a pressure member, and an electrode member that is pressed against the surface of the semiconductor element by the pressure member to be energized,
The electrode member is arranged uniformly on the surface on the side pressed against the surface of the semiconductor element, and a plurality of cone-shaped protrusions that can penetrate the oxide film formed on the surface of the semiconductor element;
A press contact type semiconductor device comprising: a flat portion formed surrounding the convex portion.
該凸部の表面形状に沿う形状の凹部を備える鋳型を用いて、電鋳法により形成することを特徴とする電極部材の製造方法。 Formed on the surface of a semiconductor element used in a pressure contact type semiconductor device comprising a semiconductor element, a pressure member, and an electrode member that is pressed against the surface of the semiconductor element by the pressure member to be energized. A method of manufacturing an electrode member comprising a plurality of cone-shaped convex portions that can penetrate the oxidized film, and a planar portion formed surrounding the convex portions,
Method of manufacturing an electrode member, characterized in that using a mold having a recess shape along the surface shape of the convex portion is formed by electroforming.
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