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JP5980082B2 - External condition input circuit - Google Patents
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JP5980082B2 - External condition input circuit - Google Patents

External condition input circuit Download PDF

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JP5980082B2
JP5980082B2 JP2012221218A JP2012221218A JP5980082B2 JP 5980082 B2 JP5980082 B2 JP 5980082B2 JP 2012221218 A JP2012221218 A JP 2012221218A JP 2012221218 A JP2012221218 A JP 2012221218A JP 5980082 B2 JP5980082 B2 JP 5980082B2
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voltage
semiconductor
drive voltage
external condition
condition input
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JP2014075660A (en
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浩史 市原
浩史 市原
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Mitsubishi Electric Corp
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Description

この発明は、例えば電車用き電線の変電所内配電盤の遮断器のトリップ動作を電車運行指令所の中央制御装置のモニタに表示する場合などに使用される外部条件入力回路に関し、例えばDC24Vを越える高電圧が印加される高電圧印加デジタル信号入力装置等に使用され、表示,故障等の第1の駆動電圧の動作信号を取り込み、第1の駆動電圧とは異なる第2の駆動電圧の論理集積回路等のデジタル情報信号処理回路に動作信号情報デジタル信号を出力する外部条件入力回路に関するものである。   The present invention relates to an external condition input circuit used for displaying, for example, a trip operation of a circuit breaker of a distribution board in a substation of a train feeder on a monitor of a central control unit of a train operation command station. A logic integrated circuit having a second drive voltage different from the first drive voltage, which is used in a high voltage application digital signal input device to which a voltage is applied, takes in an operation signal of the first drive voltage such as display or failure The present invention relates to an external condition input circuit that outputs an operation signal information digital signal to a digital information signal processing circuit.

従来の例えばデジタル信号入力装置における外部条件入力回路は、外部からの動作信号(リレー接点による回路開/閉)を、リレーまたは分圧抵抗回路やツェナーダイオードによって降圧した動作信号情報信号を受け、この動作信号情報信号をフォトカプラ経由で例えばTTL,CMOS等の論理集積回路等のデジタル情報信号処理回路に利用可能な動作信号情報デジタル信号に変換している。(特許文献1参照)   A conventional external condition input circuit in a conventional digital signal input device, for example, receives an operation signal information signal obtained by stepping down an external operation signal (circuit open / close by a relay contact) using a relay, a voltage dividing resistor circuit or a Zener diode. The operation signal information signal is converted into an operation signal information digital signal that can be used in a digital information signal processing circuit such as a logic integrated circuit such as TTL or CMOS via a photocoupler. (See Patent Document 1)

特開2002−185296号公報(図1〜5及びその説明)JP 2002-185296 A (FIGS. 1 to 5 and explanation thereof)

従来の外部条件入力回路では、外部条件入力信号の駆動電圧とTTL,CMOS等の論理集積回路等のデジタル情報信号処理回路の駆動電圧との違いから、外部条件入力信号を一旦リレーで受け、デジタル情報信号処理回路に印加する電圧に変換する必要があった。この電圧変換に使用するリレーに、外部条件入力信号の駆動電圧DC48V〜DC110Vの電源とは異なる駆動電圧DC24Vの別の電源を装備する必要があった。
TTL,CMOS等の論理集積回路の駆動電圧DC5Vの印加に用いる電源を含めると、3種類の電源を準備する必要があり、装置構成が複雑になっていた。
In the conventional external condition input circuit, the external condition input signal is temporarily received by a relay because of the difference between the drive voltage of the external condition input signal and the drive voltage of the digital information signal processing circuit such as a logic integrated circuit such as TTL or CMOS. It was necessary to convert the voltage to be applied to the information signal processing circuit. It was necessary to equip the relay used for this voltage conversion with another power source with a driving voltage DC24V different from the power source with driving voltages DC48V to DC110V of the external condition input signal.
Including the power supply used for applying the drive voltage DC5V of the logic integrated circuit such as TTL, CMOS, etc., it is necessary to prepare three types of power supplies, and the apparatus configuration is complicated.

また、特許文献1の図1のように、外部条件入力回路にリレーを装備することは、回路に機械式可動部を設けることになり、故障する確立が高くなっていた。   In addition, as shown in FIG. 1 of Patent Document 1, when the external condition input circuit is equipped with a relay, a mechanical movable part is provided in the circuit, and the probability of failure is high.

従来の外部条件入力回路において、特許文献1の図3のように、分圧抵抗を使って、外部条件入力信号の駆動電圧を、TTL,CMOS等の論理集積回路等のデジタル情報信号処理回路の駆動電圧に変換する回路では、電圧差を分圧抵抗で熱に変換して消費するため、電力の無駄な消費となっていた。
また電圧差を分圧抵抗で熱に変換して消費することにより、発生する熱を放熱する機構が必要となり、装置構成が複雑になっていた。
In a conventional external condition input circuit, as shown in FIG. 3 of Patent Document 1, a voltage dividing resistor is used to drive the drive voltage of an external condition input signal to a digital information signal processing circuit such as a logic integrated circuit such as TTL or CMOS. In a circuit for converting to a drive voltage, the voltage difference is converted into heat by a voltage dividing resistor and consumed, so that power is wasted.
Further, by converting the voltage difference into heat with a voltage dividing resistor and consuming it, a mechanism for radiating the generated heat is required, and the device configuration is complicated.

従来の外部条件入力回路において、特許文献1の図2、図5のように、ツェナーダイオードを使って、外部条件入力信号の駆動電圧を、TTL,CMOS等の論理集積回路の駆動電圧に変換する回路では、ツェナーダイオードがノイズ源となり、TTL,CMOS等の論理集積回路の誤動作を誘発する要因の一つともなっていた。   In the conventional external condition input circuit, as shown in FIGS. 2 and 5 of Patent Document 1, the drive voltage of the external condition input signal is converted into the drive voltage of a logic integrated circuit such as TTL or CMOS using a Zener diode. In the circuit, a Zener diode becomes a noise source, which is one of the factors that induce malfunction of logic integrated circuits such as TTL and CMOS.

この発明は上記のような課題を解決するためになされたものであり、構成が簡単で消費電力も軽微でありしかも故障や誤動作が少ない信頼性の高い外部条件入力回路を得ることを目的とするものである。   The present invention has been made to solve the above-described problems, and an object thereof is to obtain a highly reliable external condition input circuit having a simple configuration, low power consumption, and few failures and malfunctions. Is.

この発明に係る外部条件入力回路は、第1の駆動電圧の動作信号を取り込み、前記第1の駆動電圧とは異なる第2の駆動電圧の動作信号情報デジタル信号を出力する外部条件入力回路であって、前記第1の駆動電圧の動作信号が入力され前記第1の駆動電圧とは異なる前記第2の駆動電圧に変換して当該第2の駆動電圧の動作信号情報デジタル信号を出力するトランスレス半導体電圧変換装置で構成され、前記トランスレス半導体電圧変換装置が半導体DC/DCコンバータであり、前記半導体DC/DCコンバータの前記第1及び第2の駆動電圧と異なる出力電圧である第3の駆動電圧が、フォトカプラの発光ダイオードを発光させ、前記発光ダイオードの発光によって前記フォトカプラの受光素子が導通することにより、前記動作信号情報デジタル信号を出力するものである。 An external condition input circuit according to the present invention is an external condition input circuit that takes in an operation signal of a first drive voltage and outputs an operation signal information digital signal of a second drive voltage different from the first drive voltage. A transformerless circuit that receives the operation signal of the first drive voltage, converts it to the second drive voltage different from the first drive voltage, and outputs the operation signal information digital signal of the second drive voltage. A third drive configured by a semiconductor voltage converter , wherein the transformerless semiconductor voltage converter is a semiconductor DC / DC converter, and has an output voltage different from the first and second drive voltages of the semiconductor DC / DC converter; The voltage causes the light emitting diode of the photocoupler to emit light, and the light receiving element of the photocoupler is turned on by the light emission of the light emitting diode, whereby the operation signal information And it outputs the digital signal.

この発明は、第1の駆動電圧の動作信号を取り込み、前記第1の駆動電圧とは異なる第2の駆動電圧の動作信号情報デジタル信号を出力する外部条件入力回路であって、前記第1の駆動電圧の動作信号が入力され前記第1の駆動電圧とは異なる前記第2の駆動電圧に変換して当該第2の駆動電圧の動作信号情報デジタル信号を出力するトランスレス半導体電圧変換装置で構成され、前記トランスレス半導体電圧変換装置が半導体DC/DCコンバータであり、前記半導体DC/DCコンバータの前記第1及び第2の駆動電圧と異なる出力電圧である第3の駆動電圧が、フォトカプラの発光ダイオードを発光させ、前記発光ダイオードの発光によって前記フォトカプラの受光素子が導通することにより、前記動作信号情報デジタル信号を出力するので、構成が簡単で消費電力も軽微でありしかも故障や誤動作が少ない信頼性の高い、電圧の異なる第1から第3の駆動電圧の外部条件入力回路を得ることができる効果がある。 The present invention is an external condition input circuit that takes in an operation signal of a first drive voltage and outputs an operation signal information digital signal of a second drive voltage different from the first drive voltage. A transformer-less semiconductor voltage converter that receives an operation signal of a drive voltage, converts it to the second drive voltage different from the first drive voltage, and outputs an operation signal information digital signal of the second drive voltage. The transformerless semiconductor voltage converter is a semiconductor DC / DC converter, and a third drive voltage that is an output voltage different from the first and second drive voltages of the semiconductor DC / DC converter is a photocoupler. the light emitting diodes emit light, by the light receiving element of the photocoupler is turned on by light emission of the light emitting diode, and outputs the operation signal information digital signal In, configuration is less reliable simple and power consumption is insignificant yet failure or malfunction, there is an effect that can be the first of different voltages to obtain an external condition input circuit of the third driving voltage.

この発明の実施の形態1の外部条件入力回路の事例およびその周辺システムの事例を示す接続図である。It is a connection diagram which shows the example of the external condition input circuit of Embodiment 1 of this invention, and the example of its peripheral system. 図1における好ましいトランスレス半導体電圧変換装置の事例を示す接続図である。It is a connection diagram which shows the example of the preferable trans | transformerless semiconductor voltage converter in FIG. 本発明に至る過程で検討した半導体電圧変換装置の事例を示す接続図である。It is a connection diagram which shows the example of the semiconductor voltage converter considered in the process leading to this invention. 外筐に内蔵された外部条件入力回路の外観斜視図であり、その(a)は従来の外観斜視図であり、(b)は本実施の形態1における外部条件入力回路の外観斜視図である。It is an external appearance perspective view of the external condition input circuit built in the outer casing, (a) is a conventional external appearance perspective view, (b) is an external perspective view of the external condition input circuit according to the first embodiment. .

実施の形態1.
以下、この発明の実施の形態1を図1に基づいて説明する。図1は、電車用き電線の変電所TSS内の配電盤SSCの遮断器SSCBのトリップ動作を電車運行指令所TDCの中央制御装置CCAのモニタMTRに表示する場合に外部条件入力回路を適用した一事例を示し、例えばDC48V〜DC100Vを越える高電圧が印加される高電圧印加デジタル信号入力装置に使用される外部条件入力回路の一事例である。
図1において、第1の駆動電圧となる直流電源1(DC48V〜DC110V)に接続された接点2が閉じた場合、直流/直流半導体電圧変換装置である半導体DC/DCコンバータ(以下、「半導体DC/DCコンバータ」と記す)5の入力端子3,4を介して半導体DC/DCコンバータ5を充電する。
本実施の形態1では、接点2は、前記遮断器SSCBの補助接点(a接点)であり、遮断器SSCBが何等かの異常状態によりトリップ動作した場合に閉じる事例を示してある。
Embodiment 1 FIG.
A first embodiment of the present invention will be described below with reference to FIG. FIG. 1 shows an example in which an external condition input circuit is applied when a trip operation of a circuit breaker SSCB of a distribution board SSC in a substation TSS of a train feeder is displayed on a monitor MTR of a central controller CCA of a train operation command station TDC. This is an example of an external condition input circuit used for a high voltage application digital signal input device to which a high voltage exceeding, for example, DC48V to DC100V is applied.
In FIG. 1, when a contact 2 connected to a DC power source 1 (DC 48V to DC 110V) serving as a first drive voltage is closed, a semiconductor DC / DC converter (hereinafter referred to as “semiconductor DC”) that is a DC / DC semiconductor voltage converter. The semiconductor DC / DC converter 5 is charged via the input terminals 3 and 4 of 5).
In the first embodiment, the contact 2 is an auxiliary contact (a contact) of the circuit breaker SSCB, and shows a case where the circuit breaker SSCB is closed when a trip operation occurs due to some abnormal state.

接点2が閉じることにより充電された半導体D/Dコンバータ5は、出力部から、直流電源1の第1の駆動電圧(DC48V〜DC110V)より低い第3の駆動電圧であるDC24Vの動作信号を出力する。
半導体D/Dコンバータ5の出力電圧(第3の駆動電圧)であるDC24Vが、逆流防止ダイオード6,電流制限抵抗7を介して、フォトカプラ10の発光ダイオード10aを発光させ、発光ダイオード10aの発光によってフォトカプラ10の受光素子10bが導通することにより、論理集積回路等のデジタル情報信号処理回路DIOの信号読み込み部11に、第2の駆動電圧であるDC5Vの信号(つまり動作信号情報デジタル信号)を出
力する。
The semiconductor D / D converter 5 charged by closing the contact 2 outputs an operation signal of DC24V, which is a third drive voltage lower than the first drive voltage (DC48V to DC110V) of the DC power supply 1, from the output unit. To do.
The output voltage (third drive voltage) DC24V of the semiconductor D / D converter 5 causes the light emitting diode 10a of the photocoupler 10 to emit light via the backflow prevention diode 6 and the current limiting resistor 7, and light emission of the light emitting diode 10a. As a result, the light receiving element 10b of the photocoupler 10 is turned on, so that the signal reading unit 11 of the digital information signal processing circuit DIO such as a logic integrated circuit has a signal of DC5V (that is, an operation signal information digital signal) as the second drive voltage. Is output.

なお抵抗8とダイオード9は、チャタリングを抑制するための素子として装備する。
また、前記接点2の開閉による直流電源1からの第1の駆動電圧の半導体DC/DCコンバータ5の入力端子3,4間への印加/無印加が外部条件入力信号となる。前記接点2は上流の動作回路(例えば、・・・)の動作/不動作により開閉する。
The resistor 8 and the diode 9 are provided as elements for suppressing chattering.
The application / non-application of the first drive voltage from the DC power source 1 by the opening / closing of the contact 2 between the input terminals 3 and 4 of the semiconductor DC / DC converter 5 becomes an external condition input signal. The contact 2 is opened and closed by the operation / non-operation of an upstream operation circuit (for example,...).

次に動作について説明する。
図1において、いま接点2が開放状態で、直流電源1から半導体DC/DCコンバータ5に電源が供給されていない状態とする。(図示の状態)
この場合、半導体DC/DCコンバータ5の絶縁DC24V出力から逆流防止ダイオード6,電流制限抵抗7,フォトカプラ10に電圧が印加されないので、発光ダイオード10aが発光しないため受光素子10bが非導通となり、論理集積回路等のデジタル情報信号処理回路DIOの信号読み込み部11に信号(つまり動作信号情報デジタル信号)が出力されない。
Next, the operation will be described.
In FIG. 1, it is assumed that the contact 2 is open and no power is supplied from the DC power supply 1 to the semiconductor DC / DC converter 5. (State shown)
In this case, no voltage is applied from the insulated DC 24V output of the semiconductor DC / DC converter 5 to the backflow prevention diode 6, the current limiting resistor 7, and the photocoupler 10. Therefore, the light emitting diode 10a does not emit light, and the light receiving element 10b becomes non-conductive. No signal (that is, operation signal information digital signal) is output to the signal reading unit 11 of the digital information signal processing circuit DIO such as an integrated circuit.

接点2が、例えば遮断器SSCBのトリップ動作により閉じた場合、直流電源1から半導体DC/DCコンバータ5に第1の駆動電圧(DC48V〜DC110V)の電源が供給され、半導体DC/DCコンバータ5の絶縁DC24V出力から逆流防止ダイオード6,電流制限抵抗7,フォトカプラ10にDC24Vの電圧(第3の駆動電圧)が印加され、発光ダイオード10aが発光することにより受光素子10bが導通となり、信号読み込み部11に信号(つまり動作信号情報デジタル信号)が出力される。   When the contact 2 is closed by, for example, the trip operation of the circuit breaker SSCB, the power of the first drive voltage (DC48V to DC110V) is supplied from the DC power supply 1 to the semiconductor DC / DC converter 5, and the semiconductor DC / DC converter 5 A voltage of 24V DC (third drive voltage) is applied to the backflow prevention diode 6, the current limiting resistor 7, and the photocoupler 10 from the isolated DC 24V output, and the light emitting diode 10a emits light, whereby the light receiving element 10b becomes conductive, and the signal reading unit 11, a signal (that is, an operation signal information digital signal) is output.

信号読み込み部11に信号(つまり動作信号情報デジタル信号)が出力されると、論理集積回路等のデジタル情報信号処理回路DIOは、例えば何処の変電所のどの遮断器SSCBがトリップ動作したかの情報信号を、電車運行指令所TDCの中央制御装置CCAへ送信し、中央制御装置CCAはそのモニタMTRに何処の変電所のどの遮断器SSCBがトリップ動作したかを表示する。また、デジタル情報信号処理回路DIOは、自己の対応変電所TSSの配電盤SSCの制御回路に遮断器SSCBがトリップ動作したかの情報信号をフィードバックし、例えば当該配電盤SSC自体の制御回路は当該フィードバックされた情報信号に基づき自己の配電盤内遮断器SSCBのトリップ動作を表示する警報ランプを点灯させる。   When a signal (that is, an operation signal information digital signal) is output to the signal reading unit 11, the digital information signal processing circuit DIO such as a logic integrated circuit, for example, information on which circuit breaker SSCB of which substation has tripped. A signal is transmitted to the central control unit CCA of the train operation command station TDC, and the central control unit CCA displays on the monitor MTR which breaker SSCB of which substation has tripped. The digital information signal processing circuit DIO feeds back an information signal indicating whether the circuit breaker SSCB has tripped to the control circuit of the switchboard SSC of its corresponding substation TSS. For example, the control circuit of the switchboard SSC itself is fed back. Based on the received information signal, the alarm lamp for displaying the trip operation of its own circuit breaker SSCB is turned on.

次いで、好ましい半導体D/Dコンバータ(半導体電圧変換装置)5の事例を図2によって説明する。
図2において、半導体D/Dコンバータ5は、トランジスタ等の半導体スイッチング素子(チョッパ)Q,平滑コンデンサC、リアクトル(チョークコイル)L、およびフリーホイールダイオードDで構成されたトランスレス半導体電圧変換装置としてある。
Next, an example of a preferable semiconductor D / D converter (semiconductor voltage converter) 5 will be described with reference to FIG.
In FIG. 2, a semiconductor D / D converter 5 is a transformerless semiconductor voltage conversion device including a semiconductor switching element (chopper) Q such as a transistor, a smoothing capacitor C, a reactor (choke coil) L, and a freewheel diode D. is there.

この図2のトランスレス半導体電圧変換装置5の動作について以下に説明する。
接点2の閉成動作により、入力3、入力4間にDC48V〜110Vが印加されると、スイッチング素子(チョッパ)Qが導通状態(素子がON)の時、リアクトル(チョークコイル)Lに電流が流れてリアクトル(チョークコイル)Lにエネルギーが蓄えられると共に、絶縁DC24V出力端に電圧が印加される。 またスイッチング素子(チョッパ)Qが絶縁状態(素子がOFF)の時、リアクトル(チョークコイル)Lが電流を保とうとして起電力を発生させ、フリーホイールダイオードDを通じて絶縁DC24V出力端に電圧が印加される。
スイッチング素子(チョッパ)Qの導通状態(スイッチング素子QがONの状態)と絶縁状態(スイッチング素子QがOFFの状態)とを交互に切換え、リアクトル(チョークコイル)Lに断続的に電流を印加すると、リアクトル(チョークコイル)L、平滑コンデンサCおよび、回路に存在する抵抗成分による過渡現象が発生し、入力3、入力4間印加されるDC48V〜110Vを降圧させ、目的とする絶縁DC24V出力が得られる。なおこの際、断続的な電流印加や過渡現象により絶縁DC24V出力端にリップル電圧が発生する。このリップルを軽減するため、平滑コンデンサCによりリップル電圧の抑制を行う。
The operation of the transformerless semiconductor voltage converter 5 of FIG. 2 will be described below.
When DC 48V to 110V is applied between the input 3 and the input 4 due to the closing operation of the contact 2, when the switching element (chopper) Q is in a conductive state (element is ON), a current is supplied to the reactor (choke coil) L. While flowing, energy is stored in the reactor (choke coil) L, and a voltage is applied to the output terminal of the insulated DC 24V. In addition, when the switching element (chopper) Q is in an insulated state (element is OFF), the reactor (choke coil) L generates an electromotive force in an attempt to maintain a current, and a voltage is applied to the insulated DC24V output terminal through the freewheel diode D. The
When the switching element (chopper) Q is switched between the conduction state (switching element Q is ON) and the insulation state (switching element Q is OFF) alternately, and current is intermittently applied to the reactor (choke coil) L , A reactor (choke coil) L, a smoothing capacitor C, and a transient phenomenon caused by a resistance component existing in the circuit occurs, and the DC 48V to 110V applied between the input 3 and the input 4 is stepped down to obtain the desired insulated DC 24V output. It is done. At this time, a ripple voltage is generated at the output terminal of the insulated DC 24V due to intermittent current application or transient phenomenon. In order to reduce this ripple, the smoothing capacitor C suppresses the ripple voltage.

このように、本実施の形態1の事例は、従来のような「直流電源に接続された、リレー接点、抵抗、ダイオード、ツェナーダイオード、フォトカプラからなり、外部条件入力端子と外部条件出力端子との間において、印加される電圧を分圧抵抗,ツェナーダイオード等によって降圧する外部条件入力回路」ではなく、トランスレス半導体DC/DCコンバータ(トランスレス半導体電圧変換装置)5によって降圧する機能を備えた外部条件入力回路である。   As described above, the example of the first embodiment is a conventional case of “a relay contact, a resistor, a diode, a Zener diode, and a photocoupler connected to a DC power source, and an external condition input terminal, an external condition output terminal, The function of stepping down the voltage applied by the transformerless semiconductor DC / DC converter (transformerless semiconductor voltage converter) 5 rather than the external condition input circuit for stepping down the applied voltage by the voltage dividing resistor, Zener diode, etc. External condition input circuit.

なお、半導体電圧変換装置5として、図3に示すようなトランスTRを有する半導体電圧変換装置を使用することも機能的には可能であるが、トランスTRを有する半導体電圧変換装置は全体的に大型となり、配電盤内等の狭隘な場所に設置する場合には占有面積が大きくなり好ましくなく、また、トランス自体も発熱するので、配電盤内の制御回路部の近傍を避けて設置する必要も生じ設置場所上の制約も生じる等の不具合が生じることが、本発明に至る過程で判明した。   Although it is functionally possible to use a semiconductor voltage conversion device having a transformer TR as shown in FIG. 3 as the semiconductor voltage conversion device 5, the semiconductor voltage conversion device having the transformer TR is generally large. When installing in a confined place such as inside a switchboard, the occupied area becomes large, which is not preferable, and the transformer itself generates heat, so it is necessary to avoid the vicinity of the control circuit section in the switchboard, and the installation place It has been found in the process of reaching the present invention that problems such as the above-mentioned restrictions occur.

図4は外筐5Cに内蔵された外部条件入力回路の外観斜視図であり、その(a)は従来の「直流電源に接続された、リレー接点、抵抗、ダイオード、ツェナーダイオード、フォトカプラからなり、外部条件入力端子と外部条件出力端子との間において、印加される電圧を分圧抵抗によって降圧する外部条件入力回路」の外観図であり、(b)は本実施の形態1におけるトランスレス半導体電圧変換装置を使用した外部条件入力回路の外観図である。
図4の(a)と(b)とを比較すれば判明するように、本実施の形態1の外部条件入力回路(b)は、従来の外部条件入力回路(a)の半分の大きさ、特に横幅Wが従来の外部条件入力回路(a)のほぼ1/2であり、しかも外筐5Cからの放熱は殆どないことが分かった。
FIG. 4 is an external perspective view of an external condition input circuit built in the outer casing 5C, and FIG. 4A is a conventional “connected to a DC power source, consisting of a relay contact, a resistor, a diode, a Zener diode, and a photocoupler. FIG. 2 is an external view of an “external condition input circuit that steps down an applied voltage by a voltage dividing resistor between an external condition input terminal and an external condition output terminal”, and (b) is a transformerless semiconductor according to the first embodiment. It is an external view of the external condition input circuit using a voltage converter.
As can be seen by comparing (a) and (b) of FIG. 4, the external condition input circuit (b) of the first embodiment is half the size of the conventional external condition input circuit (a). In particular, it has been found that the lateral width W is almost ½ of that of the conventional external condition input circuit (a), and that there is almost no heat dissipation from the outer casing 5C.

なお、図1におけるDC48V〜DC110Vの第1の駆動電圧が交流である場合にも適用でき、その場合、半導体DC/DCコンバータ5は、交流/直流半導体電圧変換装置である半導体AC/DCコンバータとすればよい。   Note that the present invention can also be applied to the case where the first drive voltage of DC48V to DC110V in FIG. 1 is alternating current. In this case, the semiconductor DC / DC converter 5 includes a semiconductor AC / DC converter that is an AC / DC semiconductor voltage converter. do it.

図1においては、第1の駆動電圧DC48V〜DC110Vから第1の駆動電圧DC5Vに降圧する場合について例示したが、例えば、論理集積回路等のデジタル情報信号処理回路(図示省略)の処理結果を上流の動作回路(図示省略)に反映する動作回路の外部条件入力回路に適用する場合は、半導体DC/DCコンバータ5は、その入力信号の駆動電圧より出力信号の駆動電圧が高くなるように、昇圧する半導体DC/DCコンバータ5を使用すればよい。   Although FIG. 1 illustrates the case where the first drive voltage DC48V to DC110V is stepped down to the first drive voltage DC5V, for example, the processing result of a digital information signal processing circuit (not shown) such as a logic integrated circuit is shown upstream. When applied to the external condition input circuit of the operation circuit reflected in the operation circuit (not shown), the semiconductor DC / DC converter 5 boosts the output signal so that the drive voltage of the output signal is higher than the drive voltage of the input signal. The semiconductor DC / DC converter 5 to be used may be used.

なお、本発明は、その発明の範囲内において、実施の形態を適宜、変形することができる。   In the present invention, the embodiments can be modified as appropriate within the scope of the invention.

1 直流電源(DC48V〜DC110V)、 2 接点、 3 端子、
4 端子、 5 半導体DC/DCコンバータ(半導体電圧変換装置)、
5C 外筐、 6 逆流防止ダイオード、 7 電流制限抵抗、
8 チャタリング抑止抵抗、 9 チャタリング抑止ダイオード、
10 フォトカプラ、 10a 発光素子、 10b 受光素子、
11 信号読み込み部、 CCA 中央制御装置、 MTR モニタ、
SSC 配電盤、 SSCB 遮断器、 TDC 電車運行指令所、
TSS 電車用き電線の変電所。
1 DC power supply (DC48V ~ DC110V), 2 contacts, 3 terminals,
4 terminals, 5 semiconductor DC / DC converter (semiconductor voltage converter),
5C outer casing, 6 backflow prevention diode, 7 current limiting resistor,
8 Chattering suppression resistor, 9 Chattering suppression diode,
10 photocoupler, 10a light emitting element, 10b light receiving element,
11 Signal reading unit, CCA central control unit, MTR monitor,
SSC switchboard, SSCB circuit breaker, TDC train operation command center,
TSS Electric substation for trains.

Claims (2)

第1の駆動電圧の動作信号を取り込み、前記第1の駆動電圧とは異なる第2の駆動電圧の動作信号情報デジタル信号を出力する外部条件入力回路であって、
前記第1の駆動電圧の動作信号が入力され前記第1の駆動電圧とは異なる前記第2の駆動電圧に変換して当該第2の駆動電圧の動作信号情報デジタル信号を出力するトランスレス半導体電圧変換装置で構成され
前記トランスレス半導体電圧変換装置が半導体DC/DCコンバータであり、前記半導体DC/DCコンバータの前記第1及び第2の駆動電圧と異なる出力電圧である第3の駆動電圧が、フォトカプラの発光ダイオードを発光させ、前記発光ダイオードの発光によって前記フォトカプラの受光素子が導通することにより、前記動作信号情報デジタル信号を出力する外部条件入力回路。
An external condition input circuit that takes in an operation signal of a first drive voltage and outputs an operation signal information digital signal of a second drive voltage different from the first drive voltage;
Transformerless semiconductor voltage that receives the operation signal of the first drive voltage, converts the second drive voltage to be different from the first drive voltage, and outputs the operation signal information digital signal of the second drive voltage Consisting of a conversion device ,
The transformerless semiconductor voltage converter is a semiconductor DC / DC converter, and a third drive voltage that is an output voltage different from the first and second drive voltages of the semiconductor DC / DC converter is a light emitting diode of a photocoupler. And an external condition input circuit for outputting the operation signal information digital signal when the light receiving element of the photocoupler is turned on by light emission of the light emitting diode .
請求項1に記載の外部条件入力回路において、前記第1から第3の駆動電圧が何れも直流電圧であることを特徴とする外部条件入力回路。 2. The external condition input circuit according to claim 1, wherein each of the first to third drive voltages is a DC voltage .
JP2012221218A 2012-10-03 2012-10-03 External condition input circuit Expired - Fee Related JP5980082B2 (en)

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