JP6014455B2 - Manufacturing method of semiconductor device - Google Patents

Description

  The present invention relates to a method for manufacturing a semiconductor device.

Conventionally, in a manufacturing process of a semiconductor device such as an IC or an LSI, a large number of IC chips are usually formed on a semiconductor silicon wafer and separated into pieces by dicing.
With the need for further miniaturization and higher performance of electronic devices, further miniaturization and higher integration are required for IC chips mounted on electronic devices. High integration is approaching its limit.

  As an electrical connection method from an integrated circuit in an IC chip to an external terminal of the IC chip, a wire bonding method has been widely known. However, in recent years, in order to reduce the size of the IC chip, a silicon substrate is used. A method is known in which a through-hole is provided in the semiconductor device and a metal plug as an external terminal is connected to an integrated circuit so as to pass through the through-hole (so-called silicon through electrode (TSV) forming method). However, only the method of forming the through silicon vias cannot sufficiently meet the above-described needs for higher integration of the recent IC chip.

  In view of the above, a technique is known in which the degree of integration per unit area of a silicon substrate is improved by multilayering integrated circuits in an IC chip. However, since the multilayered integrated circuit increases the thickness of the IC chip, it is necessary to reduce the thickness of the members constituting the IC chip. For example, the thinning of the silicon substrate is being considered as the thinning of such a member, which not only leads to the miniaturization of the IC chip, but also saves labor in the through hole manufacturing process of the silicon substrate in the manufacture of the silicon through electrode. Because it is possible, it is considered promising.

As a semiconductor silicon wafer used in a semiconductor device manufacturing process, a semiconductor silicon wafer having a thickness of about 700 to 900 μm is widely known. In recent years, the thickness of a semiconductor silicon wafer has been reduced for the purpose of miniaturizing an IC chip. Attempts have been made to reduce the thickness to 200 μm or less.
However, since the semiconductor silicon wafer having a thickness of 200 μm or less is very thin, and the semiconductor device manufacturing member based on this is also very thin, such a member can be further processed, or When such a member is simply moved, it is difficult to support the member stably and without causing damage.

  To solve the above problems, after pre-thinning the semiconductor wafer before thinning with the device provided on the surface and the processing support substrate with a silicone adhesive, grinding the back of the semiconductor wafer to make it thin A technique is known in which a semiconductor wafer is drilled to provide a silicon through electrode, and then a processing support substrate is detached from the semiconductor wafer (see Patent Document 1). According to this technology, resistance to grinding during back grinding of semiconductor wafers, heat resistance in anisotropic dry etching processes, chemical resistance during plating and etching, smooth separation from the final support substrate for processing, It is said that low adherend contamination can be achieved at the same time.

  Further, as a method for supporting the wafer, the wafer is supported by a support layer system, and a plasma polymer layer obtained by a plasma deposition method is interposed as a separation layer between the wafer and the support layer system. The adhesive bond between the support layer system and the separation layer is made larger than the bond bond between the wafer and the separation layer, so that when the wafer is detached from the support layer system, the wafer is easily detached from the separation layer. A technique configured to be separated is also known (see Patent Document 2).

Moreover, the technique which performs temporary adhesion | attachment using a polyether sulfone and a viscosity imparting agent, and cancels | releases temporary adhesion by heating is known (patent document 3).
In addition, a technique is known in which temporary bonding is performed with a mixture of carboxylic acids and amines and the temporary bonding is released by heating (Patent Document 4).
Also, with the bonding layer made of cellulose polymer, etc., heated, the device wafer and the support substrate are bonded together by pressure bonding, and the device wafer is detached from the support substrate by heating and sliding laterally. The technique which performs is known (patent document 5).

In addition, a pressure-sensitive adhesive film that is composed of syndiotactic 1,2-polybutadiene and a photopolymerization initiator and whose adhesive force changes upon irradiation with radiation is known (Patent Document 6).
Further, the support substrate and the semiconductor wafer are temporarily bonded to each other with an adhesive made of polycarbonate, and the semiconductor wafer is processed, irradiated with irradiation radiation, and then heated to process the processed semiconductor wafer. A technique for detaching the substrate from the support substrate is known (Patent Document 7).
On the other hand, ultrasonic cleaning has been studied as a cleaning technique for the surface of a semiconductor wafer (for example, see Non-Patent Document 1).
However, ultrasonic cleaning can cause cavitation when ultrasonic waves are applied, and can easily damage the surface of the semiconductor wafer. The above-mentioned damage is particularly serious in microfabrication of a semiconductor wafer, and there is room for improvement in ultrasonic cleaning of the surface of a semiconductor wafer. There was a cleaning technique.

JP 2011-119427 A Special table 2009-528688 JP 2011-225814 A JP 2011-052142 A Special table 2010-506406 gazette JP 2007-045939 A US Patent Publication No. 2011/0318938

THE CHEMICAL TIMES 2009 No. 3 (Volume No. 213) 2-7 "State-of-the-art semiconductor wafer cleaning technology"

By the way, the surface of the semiconductor wafer on which the device is provided (that is, the device surface of the device wafer) and the support substrate (carrier substrate) are temporarily bonded via a layer made of an adhesive known in Patent Document 1 or the like. In some cases, the adhesive layer is required to have a certain degree of adhesion to stably support the semiconductor wafer.
Therefore, in the case of temporarily adhering the entire device surface of the semiconductor wafer and the support substrate via the adhesive layer, the temporary adhesion between the semiconductor wafer and the support substrate is sufficient, and the semiconductor wafer is stably and However, the temporary adhesion between the semiconductor wafer and the support substrate is too strong, so that the device may be damaged or detached from the semiconductor wafer. Problems such as device detachment tend to occur.

  Further, as in Patent Document 2, in order to suppress the adhesion between the wafer and the support layer system from becoming too strong, a plasma polymer layer as a separation layer is formed between the wafer and the support layer system by a plasma deposition method. The forming method is (1) Usually, the equipment cost for performing the plasma deposition method is large; (2) The layer formation by the plasma deposition method requires time for evacuation and monomer deposition in the plasma apparatus; and (3) Even when a separation layer composed of a plasma polymer layer is provided, when supporting a wafer to be processed, the wafer is released from support while the adhesive bond between the wafer and the separation layer is sufficient. In such a case, it is not easy to control the adhesive bond so that the wafer is easily detached from the separation layer;

  Further, as described in Patent Documents 3, 4 and 5, the method of releasing temporary adhesion by heating tends to cause a problem that the device is damaged by heating for a long time.

  Further, as described in Patent Documents 6 and 7, in the method of irradiating irradiation radiation to release temporary adhesion, it is necessary to use a support substrate that transmits the irradiation radiation.

  The present invention has been made in view of the above background, and its purpose is to provide a temporary support for a member to be processed reliably and easily when a member to be processed (such as a semiconductor wafer) is subjected to mechanical or chemical treatment. Another object of the present invention is to provide a semiconductor device manufacturing method capable of easily releasing temporary support for a processed member without damaging the processed member.

As a result of intensive studies to solve the above problems, the present inventors have provided a temporary bonding layer composed of a release layer and an adhesive layer between the support and the member to be processed, thereby providing physical properties such as polishing and heating. It has high durability against general irritation, and when peeling, the temporary bonding layer is brought into contact with a peeling solvent, and furthermore, ultrasonic waves are applied to the peeling solvent, the peeling solvent is jetted onto the bonding layer, and the peeling solvent. The peeling solvent solubility of the release layer is improved by carrying out the peeling acceleration treatment by either heating of the above, stirring of the peeling solvent, or a combination thereof. It has been found that the temporary support for the treated member can be easily released without irradiation with light or radiation, and the present invention has been completed based on these findings. That is, the present invention is as follows.
<1>
A method for manufacturing a semiconductor device, comprising the following steps (a), (b) and (c).
(A) The first surface of the member to be processed and the substrate, (A) the temporary bonding layer for manufacturing a semiconductor device having the release layer and (B) the adhesive layer, and the first surface of the member to be processed are the above-mentioned (A) a step of adhering the release layer so that the substrate is in contact with the adhesive layer (B);
(A) performing a mechanical or chemical treatment on a second surface different from the first surface of the member to be treated to obtain a treated member; and
(C) a step of bringing a release solvent into contact with the temporary bonding layer and detaching the treated member from the temporary bonding layer, wherein the temporary bonding layer and the release solvent are brought into contact with the release solvent. Application of ultrasonic waves having a frequency of 35 to 950 kHz, spraying of the peeling solvent to the temporary bonding layer at a spray rate of 5 ml / min to 100 ml / min, 40 ° C. of the peeling solvent to the boiling point of the peeling solvent or 200 ° C. The process of performing the peeling acceleration | stimulation process by heating at the temperature of the lower one, stirring with the stirring speed of the said peeling solvent at 30 rpm-900 rpm, or these combination.
<2>
In the step (c), an ultrasonic wave having a frequency of 35 to 950 kHz is applied to the release solvent, an injection speed of the release solvent to the temporary bonding layer is 5 ml / min to 100 ml / min, It is a step of performing peeling promotion treatment by a combination of two or more of heating at 40 ° C. to the boiling point of the peeling solvent or the lower temperature of 200 ° C., and stirring at a peeling speed of 30 to 900 rpm. <1> A method for manufacturing a semiconductor device according to <1>.
<3>
<1> or <2>, wherein the peeling solvent is selected from alcohols, ketones, ethers, esters, aliphatic and aromatic hydrocarbons, halogenated hydrocarbons, amides, and cellosolves. The manufacturing method of the semiconductor device of description.
<4>
The method for manufacturing a semiconductor device according to any one of <1> to <3>, wherein the adhesive layer contains a binder, a polymerizable monomer, and at least one of a photopolymerization initiator and a thermal polymerization initiator. .
<5>
Before the step of bonding the first surface of the member to be processed and the substrate through the temporary bonding layer, actinic rays, radiation, or heat is applied to the adhesive layer (B) of the temporary bonding layer. The method for manufacturing a semiconductor device according to any one of <1> to <4>, further comprising an irradiation step.
<6>
After the step of adhering the first surface of the member to be processed and the substrate through the temporary bonding layer, and mechanically or chemically treating the second surface of the member to be processed. The semiconductor device according to any one of <1> to <5>, further including a step of heating the temporary bonding layer at a temperature of 50 ° C. to 300 ° C. before the step of applying and obtaining the processed member. Production method.
The present invention relates to the method for manufacturing a semiconductor device according to <1> to <6> above, but other matters are also described for reference.

[1]
A method for manufacturing a semiconductor device, comprising the following steps (a), (b) and (c).
(A) a step of bonding the first surface of the member to be processed and the substrate so as to interpose a temporary bonding layer for manufacturing a semiconductor device having (A) a release layer and (B) an adhesive layer;
(A) A step of applying a mechanical or chemical treatment to a second surface different from the first surface of the member to be treated to obtain a treated member, and (c) the temporary bonding layer. A step of bringing a release solvent into contact with and removing the treated member from the bonding layer, wherein when the temporary bonding layer and the release solvent are brought into contact with each other, an ultrasonic wave is applied to the release solvent; The process of performing the peeling acceleration process by either injection | pouring with respect to a temporary joining layer, heating of a peeling solvent, stirring of a peeling solvent, or these combination.
[2]
The method for producing a semiconductor device according to [1], wherein the adhesive layer contains a binder, a polymerizable monomer, and at least one of a photopolymerization initiator and a thermal polymerization initiator.
[3]
Before the step of bonding the first surface of the member to be processed and the substrate through the temporary bonding layer, actinic rays, radiation, or heat is applied to the adhesive layer (B) of the temporary bonding layer. The method for manufacturing a semiconductor device according to [1] or [2], further comprising an irradiation step.
[4]
After the step of adhering the first surface of the member to be processed and the substrate through the temporary bonding layer, and mechanically or chemically treating the second surface of the member to be processed. The semiconductor device according to any one of [1] to [3], further including a step of heating the temporary bonding layer at a temperature of 50 ° C. to 300 ° C. before the step of applying and obtaining the processed member. Production method.

  According to the present invention, when mechanically or chemically treating a member to be treated, the member to be treated can be temporarily and reliably supported, and the temporary treatment of the treated member can be performed without damaging the treated member. A method of manufacturing a semiconductor device that can release the support can be provided.

1A, 1B, and 1C are a schematic cross-sectional view illustrating temporary bonding between an adhesive support and a device wafer, a schematic plan view showing a device wafer temporarily bonded by the adhesive support, and bonding, respectively. It is a schematic sectional drawing which shows the state by which the device wafer temporarily bonded by the adhesive support body was thinned. It is a schematic sectional drawing explaining cancellation | release of the temporary adhesion state of the conventional adhesive support body and a device wafer. FIG. 3A shows a schematic cross-sectional view illustrating exposure of the adhesive support, and FIG. 3B shows a schematic top view of the mask. FIG. 4A shows a schematic cross-sectional view of a pattern-exposed adhesive support, and FIG. 4B shows a schematic top view of the pattern-exposed adhesive support. The schematic sectional drawing explaining irradiation of actinic light, a radiation, or a heat | fever with respect to an adhesive support body is shown.

Hereinafter, embodiments of the present invention will be described in detail.
In the description of the group (atomic group) in this specification, the notation which does not describe substitution and non-substitution includes the thing which has a substituent with the thing which does not have a substituent. For example, the “alkyl group” includes not only an alkyl group having no substituent (unsubstituted alkyl group) but also an alkyl group having a substituent (substituted alkyl group).
“Actinic light” or “radiation” in the present specification means, for example, those containing visible light, ultraviolet rays, far ultraviolet rays, electron beams, X-rays and the like. In the present invention, “light” means actinic rays or radiation.
In addition, the term “exposure” in the present specification is not limited to exposure with a far-ultraviolet ray such as a mercury lamp, ultraviolet ray, and excimer laser, X-ray, EUV light, etc. It also means drawing with particle beams.
In the present specification, “(meth) acrylate” represents acrylate and methacrylate, “(meth) acryl” represents acryl and methacryl, and “(meth) acryloyl” represents acryloyl and methacryloyl. In the present specification, “monomer” and “monomer” are synonymous.The monomer in the present invention is distinguished from oligomers and polymers, and refers to a compound having a mass average molecular weight of 2,000 or less. In the specification, a polymerizable compound means a compound having a polymerizable group, and may be a monomer or a polymer, and a polymerizable group is a group involved in a polymerization reaction. say.
In the embodiments described below, the members and the like described in the drawings already referred to are denoted by the same or corresponding reference numerals in the drawings, and the description is simplified or omitted.

The method for manufacturing a semiconductor device of the present invention includes the following steps (a), (b), and (c).
(A) a step of bonding the first surface of the member to be processed and the substrate so as to interpose a temporary bonding layer for manufacturing a semiconductor device having (A) a release layer and (B) an adhesive layer;
(A) A step of applying a mechanical or chemical treatment to a second surface different from the first surface of the member to be treated to obtain a treated member, and (c) the temporary bonding layer. A step of bringing a release solvent into contact with and removing the treated member from the bonding layer, wherein when the temporary bonding layer and the release solvent are brought into contact with each other, an ultrasonic wave is applied to the release solvent; The process of performing the peeling acceleration process by either injection | pouring with respect to a temporary joining layer, heating of a peeling solvent, stirring of a peeling solvent, or these combination.

If a wafer bonded with only one adhesive layer is subjected to ultrasonic wave application, solvent injection, solvent agitation, solvent heating, etc. as a delamination promoting process, the wafer or the structure formed on the wafer will be damaged. (See, for example, Non-Patent Document 1).
On the other hand, according to the method for manufacturing a semiconductor device of the present invention, by providing two layers of an adhesive layer and a release layer, the stimulus given by the release acceleration treatment is concentrated at the adhesive layer-release layer interface. Therefore, the wafer or the structure formed on the wafer can be peeled without being damaged.

First, a temporary bonding layer for manufacturing a semiconductor device according to the present invention (hereinafter also simply referred to as “temporary bonding layer”) will be described.
The temporary bonding layer for manufacturing a semiconductor device in the present invention has (A) a release layer and (B) an adhesive layer.
According to the temporary joining layer for manufacturing a semiconductor device in the present invention, when a member to be processed is subjected to mechanical or chemical treatment, the member to be processed can be temporarily and reliably supported, and the processed member is damaged. The temporary joining layer for semiconductor device manufacture which can cancel | release temporary support with respect to a processed member without being obtained is obtained.
The temporary bonding layer for manufacturing a semiconductor device in the present invention is preferably used for forming a silicon through electrode. The formation of the through silicon via will be described in detail later.

(A) Release layer The release layer is used for the purpose of improving the peelability with a release solvent described later. Therefore, the release layer is required to have good solubility in the release solvent while having a small change in adhesion to heat and chemicals. The release layer contains a binder.

The release layer is formed by applying the release layer composition containing the above-mentioned binder to a member to be processed using a conventionally known spin coat method, spray method, roller coat method, flow coat method, doctor coat method, dipping method, or the like. And then dried.
The thickness of the release layer is, for example, in the range of 1 to 500 μm, but is not particularly limited.

  Hereinafter, the binder contained in the release layer composition will be described.

(binder)
In the present invention, any binder can be used as the binder contained in the release layer composition.
For example, terpene resin, terpene phenol resin, modified terpene resin, hydrogenated terpene resin, hydrogenated terpene phenol resin, rosin, rosin ester, hydrogenated rosin, hydrogenated rosin ester, polymerized rosin, polymerized rosin ester, modified rosin, rosin modified Phenol resin, alkylphenol resin, aliphatic petroleum resin, aromatic petroleum resin, hydrogenated petroleum resin, modified petroleum resin, alicyclic petroleum resin, coumarone petroleum resin, indene petroleum resin, olefin copolymer (for example, methylpentene copolymer) , Cycloolefin copolymer (for example, norbornene copolymer, dicyclopentadiene copolymer, tetracyclododecene copolymer), novolac resin, phenol resin, epoxy resin, melamine resin, urea resin, unsaturated polyester resin, alkyd resin , Polyure Polyimide, polyethylene, polypropylene, polyvinyl chloride, polystyrene, polyvinyl acetate, Teflon (registered trademark), ABS resin, AS resin, acrylic resin, cellulose resin, polyamide, polyacetal, polycarbonate, polyphenylene ether, polybutylene terephthalate, Examples include synthetic resins such as polyethylene terephthalate, cyclic polyolefin, polyphenylene sulfide, polysulfone, polyether sulfone, polyarylate, polyether ether ketone, and polyamideimide, and natural resins such as natural rubber. Among these, cellulose resin, terpene resin, polyimide, acrylic resin, and polyamide are preferable, polyimide and polyamide are more preferable, and polyimide is most preferable.

  The amount of the binder added in the release layer of the present invention is preferably 1 to 60% by mass, more preferably 10 to 60% by mass, more preferably 20 to 20% by mass with respect to the total solid content (excluding the solvent) of the release layer of the present invention. 60% by mass is particularly preferred.

Any known solvent can be used without limitation as long as it can form a release layer, but N-methyl-2-pyrrolidone, 2-butanone, methyl amyl ketone, limonene, and the like can be used, and N-methyl-2-pyrrolidone, 2 -Butanone, methyl amyl ketone or limonene are preferred.
It is preferable that a solvent is used so that the solid content concentration of a peeling layer composition may be 10-40 mass%.

  The release layer composition may contain a surfactant as necessary.

  Various surfactants may be added to the release layer composition of the present invention from the viewpoint of further improving applicability. As the surfactant, various surfactants such as a fluorine-based surfactant, a nonionic surfactant, a cationic surfactant, an anionic surfactant, and a silicone-based surfactant can be used.

In particular, the release layer of the release layer composition of the present invention contains a fluorosurfactant, so that the liquid properties (particularly fluidity) when prepared as a coating solution are further improved. The uniformity and liquid-saving property can be further improved.
That is, in the case of forming a film using a release layer composition containing a fluorosurfactant, the wettability to the coated surface is improved by reducing the interfacial tension between the coated surface and the coating liquid. The applicability to the coated surface is improved. For this reason, even when a thin film of about several μm is formed with a small amount of liquid, it is effective in that it is possible to more suitably form a film having a uniform thickness with small thickness unevenness.

  The fluorine content in the fluorosurfactant is preferably 3% by mass to 40% by mass, more preferably 5% by mass to 30% by mass, and particularly preferably 7% by mass to 25% by mass. A fluorine-based surfactant having a fluorine content within this range is effective in terms of uniformity of coating film thickness and liquid-saving properties, and has good solubility in the release layer composition.

  Examples of the fluorosurfactant include Megafac F171, F172, F173, F176, F176, F177, F141, F142, F143, F144, R30, F437, F475, F479, F482, F554, F780, F780, F781 (above DIC Corporation), Florard FC430, FC431, FC171 (above, Sumitomo 3M Limited), Surflon S-382, SC-101, Same SC-103, Same SC-104, Same SC-105, Same SC1068, Same SC-381, Same SC-383, Same S393, Same KH-40 (manufactured by Asahi Glass Co., Ltd.), PF636, PF656, PF6320 PF6520, PF7002 (manufactured by OMNOVA), and the like.

  Specific examples of nonionic surfactants include glycerol, trimethylolpropane, trimethylolethane, and ethoxylates and propoxylates thereof (for example, glycerol propoxylate, glycerin ethoxylate, etc.), polyoxyethylene lauryl ether, polyoxyethylene Stearyl ether, polyoxyethylene oleyl ether, polyoxyethylene octylphenyl ether, polyoxyethylene nonylphenyl ether, polyethylene glycol dilaurate, polyethylene glycol distearate, sorbitan fatty acid ester (Pluronic L10, L31, L61, L62 manufactured by BASF, 10R5, 17R2, 25R2, Tetronic 304, 701, 704, 901, 904, 150R1, Sol Perth 20000 (manufactured by Nippon Lubrizol Corporation), and the like.

  Specific examples of the cationic surfactant include phthalocyanine derivatives (trade name: EFKA-745, manufactured by Morishita Sangyo Co., Ltd.), organosiloxane polymer KP341 (manufactured by Shin-Etsu Chemical Co., Ltd.), (meth) acrylic acid ( Co) polymer polyflow no. 75, no. 90, no. 95 (manufactured by Kyoeisha Chemical Co., Ltd.), W001 (manufactured by Yusho Co., Ltd.) and the like.

  Specific examples of the anionic surfactant include W004, W005, W017 (manufactured by Yusho Co., Ltd.) and the like.

Examples of the silicone surfactant include “Toray Silicone DC3PA”, “Toray Silicone SH7PA”, “Toray Silicone DC11PA”, “Tore Silicone SH21PA”, “Tore Silicone SH28PA”, “Toray Silicone” manufactured by Toray Dow Corning Co., Ltd. “Silicone SH29PA”, “Toresilicone SH30PA”, “Toresilicone SH8400”, “TSF-4440”, “TSF-4300”, “TSF-4445”, “TSF-4460”, “TSF” manufactured by Momentive Performance Materials, Inc. -4552 "," KP341 "," KF6001 "," KF6002 "manufactured by Shin-Etsu Silicone Co., Ltd.," BYK307 "," BYK323 "," BYK330 "manufactured by Big Chemie.
Only one type of surfactant may be used, or two or more types may be combined.
The addition amount of the surfactant is preferably 0.001% by mass to 2.0% by mass and more preferably 0.005% by mass to 1.0% by mass with respect to the total solid content of the release layer composition. .

(B) Adhesive layer The adhesive layer is used for the purpose of connecting the release layer and the substrate. Therefore, the adhesive layer is required to have a small adhesive change with respect to heat and chemicals.
The adhesive layer is formed on the carrier substrate by using an adhesive composition containing each component described later using a conventionally known spin coating method, spray method, roller coating method, flow coating method, doctor coating method, dipping method, or the like. It can be formed by applying to and then drying.
The thickness of the adhesive layer is, for example, in the range of 1 to 500 μm, but is not particularly limited.

  The adhesive composition (and thus the adhesive layer) preferably contains a binder.

In the present invention, any binder can be used.
For example, hydrocarbon resin, novolac resin, phenol resin, epoxy resin, melamine resin, urea resin, unsaturated polyester resin, alkyd resin, polyurethane, polyimide, polyethylene, polypropylene, polyvinyl chloride, polystyrene, polyvinyl acetate, Teflon (registered) Trademark), ABS resin, AS resin, acrylic resin, polyamide, polyacetal, polycarbonate, polyphenylene ether, polybutylene terephthalate, polyethylene terephthalate, cyclic polyolefin, polyphenylene sulfide, polysulfone, polyethersulfone, polyarylate, polyetheretherketone, Examples include synthetic resins such as polyamideimide and natural resins such as natural rubber. Among these, polyurethane, novolac resin, polyimide and polystyrene are preferable, polyurethane, novolac resin and polyimide are more preferable, and polyurethane is most preferable.

In the present invention, any hydrocarbon resin can be used.
The hydrocarbon resin in the present invention basically means a resin composed of only carbon atoms and hydrogen atoms, but if the basic skeleton is a hydrocarbon resin, it may contain other atoms as side chains. In addition, the hydrocarbon resin in the present invention does not include a resin in which a functional group other than a hydrocarbon group is directly bonded to the main chain, such as an acrylic resin, a polyvinyl alcohol resin, a polyvinyl acetal resin, and a polyvinyl pyrrolidone resin.

  Examples of hydrocarbon resins that meet the above conditions include polystyrene resin, terpene resin, terpene phenol resin, modified terpene resin, hydrogenated terpene resin, hydrogenated terpene phenol resin, rosin, rosin ester, hydrogenated rosin, and hydrogenated rosin ester. , Polymerized rosin, polymerized rosin ester, modified rosin, rosin modified phenolic resin, alkylphenol resin, aliphatic petroleum resin, aromatic petroleum resin, hydrogenated petroleum resin, modified petroleum resin, alicyclic petroleum resin, coumarone petroleum resin, inden petroleum Examples thereof include resins, olefin monomer polymers (for example, methylpentene copolymer), cycloolefin monomer polymers (for example, norbornene copolymer, dicyclopentadiene copolymer, tetracyclododecene copolymer) and the like.

  Among them, polystyrene resin, terpene resin, rosin, petroleum resin, hydrogenated rosin, polymerized rosin, olefin monomer polymer, and cycloolefin monomer polymer are preferable, and polystyrene resin, terpene resin, rosin, olefin monomer polymer, cycloolefin monomer polymer are preferable. More preferably, polystyrene resin, terpene resin, rosin, olefin monomer polymer, polystyrene resin, cycloolefin monomer polymer are more preferable, polystyrene resin, terpene resin, rosin, cycloolefin monomer polymer, olefin monomer polymer are particularly preferable. Preferably, polystyrene resin or cycloolefin monomer polymer is most preferable.

  Examples of cyclic olefin resins used in the preparation of cycloolefin copolymers include norbornene polymers, monocyclic olefin polymers, cyclic conjugated diene polymers, vinyl alicyclic hydrocarbon polymers, and their heavy polymers. Combined hydrides and the like are included. Preferred examples include an addition (co) polymer cyclic olefin resin containing at least one repeating unit represented by the following general formula (II), and, if necessary, a repeating unit represented by the general formula (I) An addition (co) polymer cyclic olefin resin further comprising at least one of the above is included. Another preferred example includes a ring-opening (co) polymer containing at least one cyclic repeating unit represented by the general formula (III).

In formula, m represents the integer of 0-4. R ^{1 to} R ⁶ are hydrogen atoms or hydrocarbon groups having 1 to 10 carbon atoms, X ^{1 to} X ³ and Y ^{1 to} Y ³ are hydrogen atoms, hydrocarbon groups having 1 to 10 carbon atoms, halogen atoms, and halogen atoms. Substituted hydrocarbon group having 1 to 10 carbon atoms, — (CH ₂ ) nCOOR ¹¹ , — (CH ₂ ) nOCOR ¹² , — (CH ₂ ) nNCO, — (CH ₂ ) nNO ₂ , — (CH ₂ ) nCN ,-(CH ₂ ) nCONR ¹³ R ¹⁴ ,-(CH ₂ ) nNR ¹³ R ¹⁴ ,-(CH ₂ ) nOZ,-(CH ₂ ) nW, or X ¹ and Y ¹ , X ² and Y ² , or X (—CO) ₂ O and (—CO) ₂ NR ¹⁵ composed of ³ and Y ³ are represented. R ¹¹ , R ¹² , R ¹³ , R ¹⁴ and R ¹⁵ are hydrogen atoms, hydrocarbon groups having 1 to 20 carbon atoms, Z is a hydrocarbon group or a hydrocarbon group substituted with halogen, and W is SiR ¹⁶ _p. D _3-p (R ¹⁶ is a hydrocarbon group having 1 to 10 carbon atoms, D is a halogen atom, —OCOR ¹⁶ or —OR ¹⁶ , and p is an integer of 0 to 3). n represents an integer of 0 to 10.

Norbornene-based addition (co) polymers are disclosed in JP-A No. 10-7732, JP-T-2002-504184, US2004 / 229157A1 or WO2004 / 070463A1. It can be obtained by addition polymerization of norbornene-based polycyclic unsaturated compounds. If necessary, a norbornene-based polycyclic unsaturated compound and ethylene, propylene, butene; conjugated dienes such as butadiene and isoprene; non-conjugated dienes such as ethylidene norbornene can also be subjected to addition polymerization. This norbornene-based addition (co) polymer is marketed by Mitsui Chemicals, Inc. under the name of Apel, and has different glass transition temperatures (Tg) such as APL8008T (Tg70 ° C), APL6013T (Tg125 ° C) or APL6015T ( Grades such as Tg145 ° C). Pellets such as TOPAS 8007, 5013, 6013, 6015, etc. are available from Polyplastics.
Further, Appear 3000 is sold by Ferrania.

Norbornene-based polymer hydrides are disclosed in JP-A-1-240517, JP-A-7-196736, JP-A-60-26024, JP-A-62-19807, JP-A-2003-159767, or JP-A-2004-309979. As disclosed in No. 1, etc., the polycyclic unsaturated compound can be produced by addition polymerization or metathesis ring-opening polymerization and then hydrogenation.
In the above formula, R5 to R6 are preferably a hydrogen atom or —CH ₃ , X ³ and Y ³ are preferably a hydrogen atom, and other groups are appropriately selected. This norbornene resin is sold under the trade name Arton G or Arton F by JSR Co., Ltd., and Zeonor ZF14, ZF16, Zeonex 250, and the like from Zeon Japan. These are commercially available under the trade names of 280 and 480R, and these can be used.

(Polymerizable monomer)
In the present invention, any polymerizable monomer can be used for the adhesive composition (and hence the adhesive layer). Here, the polymerizable monomer has a polymerizable group. The polymerizable group is typically a group that can be polymerized by irradiation with actinic rays or radiation, or by the action of radicals or acids.
The polymerizable monomer is a compound different from the above-described binder. The polymerizable monomer is typically a low molecular compound, preferably a low molecular compound having a molecular weight of 2000 or less, more preferably a low molecular compound having a molecular weight of 1500 or less, and a low molecular compound having a molecular weight of 900 or less. More preferably it is. The molecular weight is usually 100 or more.

  The polymerizable group is preferably a functional group that can undergo an addition polymerization reaction. Examples of the functional group that can undergo an addition polymerization reaction include an ethylenically unsaturated bond group, an amino group, and an epoxy group. The polymerizable group may be a functional group capable of generating a radical upon irradiation with light. Examples of such a polymerizable group include a thiol group and a halogen group. Of these, the polymerizable group is preferably an ethylenically unsaturated bond group. As the ethylenically unsaturated bond group, a styryl group, a (meth) acryloyl group, and an allyl group are preferable.

Specific examples of the reactive compound having a polymerizable group include a radical polymerizable compound (B1) and an ion polymerizable compound (B2).
Examples of the radical polymerizable compound include a (meth) acrylamide compound (B11) having 3 to 35 carbon atoms, a (meth) acrylate compound (B12) having 4 to 35 carbon atoms, and an aromatic vinyl compound (B13) having 6 to 35 carbon atoms. And a C3-C20 vinyl ether compound (B14) and other radical polymerizable compounds (B15). A radically polymerizable compound (B1) may be used individually by 1 type, or may use 2 or more types together.
Further, if necessary, a polymerization inhibitor such as hydroquinone or methyl ether hydroquinone may be used in combination.

  Examples of the (meth) acrylamide compound (B11) having 3 to 35 carbon atoms include (meth) acrylamide, N-methyl (meth) acrylamide, N-ethyl (meth) acrylamide, N-propyl (meth) acrylamide, N- n-butyl (meth) acrylamide, Nt-butyl (meth) acrylamide, N-butoxymethyl (meth) acrylamide, N-isopropyl (meth) acrylamide, N-methylol (meth) acrylamide, N, N-dimethyl (meth) ) Acrylamide, N, N-diethyl (meth) acrylamide and (meth) acryloylmorpholine.

  Examples of the (meth) acrylate compound (B12) having 4 to 35 carbon atoms include the following monofunctional to hexafunctional (meth) acrylates.

  Monofunctional (meth) acrylates include ethyl (meth) acrylate, hexyl (meth) acrylate, 2-ethylhexyl (meth) acrylate, tert-octyl (meth) acrylate, isoamyl (meth) acrylate, decyl (meth) acrylate, isodecyl (Meth) acrylate, stearyl (meth) acrylate, isostearyl (meth) acrylate, cyclohexyl (meth) acrylate, 4-n-butylcyclohexyl (meth) acrylate, bornyl (meth) acrylate, isobornyl (meth) acrylate, benzyl ( (Meth) acrylate, 2-ethylhexyl diglycol (meth) acrylate, butoxyethyl (meth) acrylate, 2-chloroethyl (meth) acrylate, 4-bromobutyl (meth) acrylate Relate, cyanoethyl (meth) acrylate, benzyl (meth) acrylate, butoxymethyl (meth) acrylate, methoxypropylene monoacrylate, 3-methoxybutyl (meth) acrylate, alkoxymethyl (meth) acrylate, 2-ethylhexyl carbitol ( (Meth) acrylate, alkoxyethyl (meth) acrylate, 2- (2-methoxyethoxy) ethyl (meth) acrylate, 2- (2-butoxyethoxy) ethyl (meth) acrylate, 2,2,2-tetrafluoroethyl (meta) ) Acrylate, 1H, 1H, 2H, 2H-perfluorodecyl (meth) acrylate, 4-butylphenyl (meth) acrylate, phenyl (meth) acrylate, 2,4,5-tetramethylphenyl (meth) acrylate 4-chlorophenyl (meth) acrylate, phenoxymethyl (meth) acrylate, phenoxyethyl (meth) acrylate, glycidyl (meth) acrylate, glycidyloxybutyl (meth) acrylate, glycidyloxyethyl (meth) acrylate, glycidyloxy Propyl (meth) acrylate, diethylene glycol monovinyl ether monoacrylate, tetrahydrofurfuryl (meth) acrylate, hydroxyalkyl (meth) acrylate, 2-hydroxyethyl (meth) acrylate, 3-hydroxypropyl (meth) acrylate, 2-hydroxypropyl ( (Meth) acrylate, 2-hydroxybutyl (meth) acrylate, 4-hydroxybutyl (meth) acrylate, dimethylaminoethyl (meth) acrylate Rate, diethylaminoethyl (meth) acrylate, dimethylaminopropyl (meth) acrylate, diethylaminopropyl (meth) acrylate, trimethoxysilylpropyl (meth) acrylate, trimethoxysilylpropyl (meth) acrylate, trimethylsilylpropyl (meth) acrylate, polyethylene Oxide monomethyl ether (meth) acrylate, oligoethylene oxide monomethyl ether (meth) acrylate, polyethylene oxide (meth) acrylate, oligoethylene oxide (meth) acrylate, oligoethylene oxide monoalkyl ether (meth) acrylate, polyethylene oxide monoalkyl ether ( (Meth) acrylate, dipropylene glycol (meth) acrelane , Polypropylene oxide monoalkyl ether (meth) acrylate, oligopropylene oxide monoalkyl ether (meth) acrylate, 2-methacryloyloxyethyl succinic acid, 2-methacryloyloxyhexahydrophthalic acid, 2-methacryloyloxyethyl-2- Hydroxypropyl phthalate, butoxydiethylene glycol (meth) acrylate, trifluoroethyl (meth) acrylate, perfluorooctylethyl (meth) acrylate, 2-hydroxy-3-phenoxypropyl (meth) acrylate, EO-modified phenol (meth) acrylate, EO Modified cresol (meth) acrylate, EO modified nonylphenol (meth) acrylate, PO modified nonylphenol (meth) acrylate and EO modified-2- Ethylhexyl (meth) acrylate. Above and below, EO represents ethylene oxide and PO represents propylene oxide.

  As the bifunctional (meth) acrylate, 1,4-butanedi (meth) acrylate, 1,6-hexanediacrylate, polypropylene diacrylate, 1,6-hexanediol di (meth) acrylate, 1,10-decanedioldi (Meth) acrylate, neopentyl diacrylate, neopentyl glycol di (meth) acrylate, 2,4-dimethyl-1,5-pentanediol di (meth) acrylate, butylethylpropanediol (meth) acrylate, ethoxylated cyclohexanemethanol Di (meth) acrylate, polyethylene glycol di (meth) acrylate, oligoethylene glycol di (meth) acrylate, ethylene glycol di (meth) acrylate, 2-ethyl-2-butyl-butanediol di (meth) a Relate, hydroxypivalate neopentyl glycol di (meth) acrylate, EO-modified bisphenol A di (meth) acrylate, bisphenol F polyethoxydi (meth) acrylate, polypropylene glycol di (meth) acrylate, oligopropylene glycol di (meth) acrylate, 1 , 4-butanediol di (meth) acrylate, 2-ethyl-2-butyl-propanediol di (meth) acrylate, 1,9-nonanedi (meth) acrylate, propoxylated ethoxylated bisphenol A di (meth) acrylate and tri And cyclodecanedi (meth) acrylate.

  Trifunctional (meth) acrylates include trimethylolpropane tri (meth) acrylate, trimethylolethane tri (meth) acrylate, trimethylolpropane alkylene oxide modified tri (meth) acrylate, pentaerythritol tri (meth) acrylate, di Pentaerythritol tri (meth) acrylate, trimethylolpropane tri ((meth) acryloyloxypropyl) ether, isocyanuric acid alkylene oxide modified tri (meth) acrylate, dipentaerythritol tri (meth) acrylate propionate, tri ((meta ) Acryloyloxyethyl) isocyanurate, hydroxypivalaldehyde-modified dimethylolpropane tri (meth) acrylate, sorbitol tri (meth) acrylate , Propoxylated trimethylolpropane tri (meth) acrylate and ethoxylated glycerol triacrylate, and the like.

  Tetrafunctional (meth) acrylates include pentaerythritol tetra (meth) acrylate, sorbitol tetra (meth) acrylate, ditrimethylolpropane tetra (meth) acrylate, propionate dipentaerythritol tetra (meth) acrylate and ethoxylated pentaerythritol tetra. (Meth) acrylate etc. are mentioned.

  Examples of pentafunctional (meth) acrylates include sorbitol penta (meth) acrylate and dipentaerythritol penta (meth) acrylate.

  Examples of hexafunctional (meth) acrylates include dipentaerythritol hexa (meth) acrylate, sorbitol hexa (meth) acrylate, phosphazene alkylene oxide modified hexa (meth) acrylate, and caprolactone modified dipentaerythritol hexa (meth) acrylate. It is done.

  Examples of the aromatic vinyl compound (B13) having 6 to 35 carbon atoms include vinyl thiophene, vinyl furan, vinyl pyridine, styrene, methyl styrene, trimethyl styrene, ethyl styrene, isopropyl styrene, chloromethyl styrene, methoxy styrene, acetoxy styrene, chloro. Styrene, dichlorostyrene, bromostyrene, vinyl benzoic acid methyl ester, 3-methylstyrene, 4-methylstyrene, 3-ethylstyrene, 4-ethylstyrene, 3-propylstyrene, 4-propylstyrene, 3-butylstyrene, 4-butylstyrene, 3-hexylstyrene, 4-hexylstyrene, 3-octylstyrene, 4-octylstyrene, 3- (2-ethylhexyl) styrene, 4- (2-ethylhexyl) styrene, allylstyrene, Seo propenyl styrene, butenylstyrene, octenyl styrene, 4-t-butoxycarbonyl styrene, 4-methoxystyrene and 4-t-butoxystyrene, and the like.

  As a C3-C35 vinyl ether compound (B14), the following monofunctional or polyfunctional vinyl ether is mentioned, for example.

  Examples of the monofunctional vinyl ether include methyl vinyl ether, ethyl vinyl ether, propyl vinyl ether, n-butyl vinyl ether, t-butyl vinyl ether, 2-ethylhexyl vinyl ether, n-nonyl vinyl ether, lauryl vinyl ether, cyclohexyl vinyl ether, cyclohexyl methyl vinyl ether, 4-methyl Cyclohexylmethyl vinyl ether, benzyl vinyl ether, dicyclopentenyl vinyl ether, 2-dicyclopentenoxyethyl vinyl ether, methoxyethyl vinyl ether, ethoxyethyl vinyl ether, butoxyethyl vinyl ether, methoxyethoxyethyl vinyl ether, ethoxyethoxyethyl vinyl ether, methoxypolyethylene glycol vinyl ether , Tetrahydrofurfuryl vinyl ether, 2-hydroxyethyl vinyl ether, 2-hydroxypropyl vinyl ether, 4-hydroxybutyl vinyl ether, 4-hydroxymethylcyclohexyl methyl vinyl ether, diethylene glycol monovinyl ether, polyethylene glycol vinyl ether, chloroethyl vinyl ether, chlorobutyl vinyl ether, chloroethoxy Examples include ethyl vinyl ether, phenyl ethyl vinyl ether, and phenoxy polyethylene glycol vinyl ether.

  Examples of the polyfunctional vinyl ether include ethylene glycol divinyl ether, diethylene glycol divinyl ether, polyethylene glycol divinyl ether, propylene glycol divinyl ether, butylene glycol divinyl ether, hexanediol divinyl ether, bisphenol A alkylene oxide divinyl ether, bisphenol F alkylene oxide divinyl ether. Divinyl ethers such as: trimethylolethane trivinyl ether, trimethylolpropane trivinyl ether, ditrimethylolpropane tetravinyl ether, glycerin trivinyl ether, pentaerythritol tetravinyl ether, dipentaerythritol pentavinyl ether, dipentaerythritol hexavinyl Ether, ethylene oxide-added trimethylolpropane trivinyl ether, propylene oxide-added trimethylolpropane trivinyl ether, ethylene oxide-added ditrimethylolpropane tetravinyl ether, propylene oxide-added ditrimethylolpropane tetravinyl ether, ethylene oxide-added pentaerythritol tetravinyl ether, propylene oxide-added penta Examples include erythritol tetravinyl ether, ethylene oxide-added dipentaerythritol hexavinyl ether, and propylene oxide-added dipentaerythritol hexavinyl ether.

  Other radical polymerizable compounds (B15) include vinyl ester compounds (such as vinyl acetate, vinyl propionate and vinyl versatate), allyl ester compounds (such as allyl acetate), halogen-containing monomers (vinylidene chloride, vinyl chloride, etc.) ) And olefin compounds (ethylene and propylene, etc.).

  Among these, the (meth) acrylamide compound (B11) and the (meth) acrylate compound (B12) are preferable from the viewpoint of the polymerization rate, and the (meth) acrylate compound (B12) is particularly preferable.

  Examples of the ion polymerizable compound (B2) include an epoxy compound (B21) having 3 to 20 carbon atoms and an oxetane compound (B22) having 4 to 20 carbon atoms.

As a C3-C20 epoxy compound (B21), the following monofunctional or polyfunctional epoxy compounds are mentioned, for example.
Examples of the monofunctional epoxy compound include phenyl glycidyl ether, p-tert-butylphenyl glycidyl ether, butyl glycidyl ether, 2-ethylhexyl glycidyl ether, allyl glycidyl ether, 1,2-butylene oxide, 1,3-butadiene monooxide. 1,2-epoxydodecane, epichlorohydrin, 1,2-epoxydecane, styrene oxide, cyclohexene oxide, 3-methacryloyloxymethylcyclohexene oxide, 3-acryloyloxymethylcyclohexene oxide and 3-vinylcyclohexene oxide. .

  Examples of the polyfunctional epoxy compound include bisphenol A diglycidyl ether, bisphenol F diglycidyl ether, bisphenol S diglycidyl ether, brominated bisphenol A diglycidyl ether, brominated bisphenol F diglycidyl ether, and brominated bisphenol S diglycidyl ether. Epoxy novolac resin, hydrogenated bisphenol A diglycidyl ether, hydrogenated bisphenol F diglycidyl ether, hydrogenated bisphenol S diglycidyl ether, 3,4-epoxycyclohexylmethyl-3 ', 4'-epoxycyclohexanecarboxylate, 2- (3,4-epoxycyclohexyl-5,5-spiro-3,4-epoxy) cyclohexane-meta-dioxane, bis (3,4-epoxycyclohexyl) Til) adipate, vinylcyclohexene oxide, 4-vinylepoxycyclohexane, bis (3,4-epoxy-6-methylcyclohexylmethyl) adipate, 3,4-epoxy-6-methylcyclohexyl-3 ′, 4′-epoxy-6 '-Methylcyclohexanecarboxylate, methylenebis (3,4-epoxycyclohexane), dicyclopentadiene diepoxide, ethylene glycol di (3,4-epoxycyclohexylmethyl) ether, ethylenebis (3,4-epoxycyclohexanecarboxylate), Dioctyl epoxyhexahydrophthalate, di-2-ethylhexyl epoxyhexahydrophthalate, 1,4-butanediol diglycidyl ether, 1,6-hexanediol diglycidyl ether, Serine triglycidyl ether, trimethylolpropane triglycidyl ether, polyethylene glycol diglycidyl ether, polypropylene glycol diglycidyl ethers, 1,1,3-tetradecadiene dioxide, limonene dioxide, 1,2,7,8-di Examples include epoxy octane and 1,2,5,6-diepoxycyclooctane.

  Among these epoxy compounds, aromatic epoxides and alicyclic epoxides are preferable, and alicyclic epoxides are particularly preferable from the viewpoint of excellent polymerization rate.

  Examples of the oxetane compound (B22) having 4 to 20 carbon atoms include compounds having 1 to 6 oxetane rings.

  Examples of the compound having one oxetane ring include 3-ethyl-3-hydroxymethyloxetane, 3- (meth) allyloxymethyl-3-ethyloxetane, (3-ethyl-3-oxetanylmethoxy) methylbenzene, 4 -Fluoro- [1- (3-ethyl-3-oxetanylmethoxy) methyl] benzene, 4-methoxy- [1- (3-ethyl-3-oxetanylmethoxy) methyl] benzene, [1- (3-ethyl-3 -Oxetanylmethoxy) ethyl] phenyl ether, isobutoxymethyl (3-ethyl-3-oxetanylmethyl) ether, isobornyloxyethyl (3-ethyl-3-oxetanylmethyl) ether, isobornyl (3-ethyl-3-oxetanyl) Methyl) ether, 2-ethylhexyl (3-ethyl-3-o Cetanylmethyl) ether, ethyldiethylene glycol (3-ethyl-3-oxetanylmethyl) ether, dicyclopentadiene (3-ethyl-3-oxetanylmethyl) ether, dicyclopentenyloxyethyl (3-ethyl-3-oxetanylmethyl) ether, Dicyclopentenyl (3-ethyl-3-oxetanylmethyl) ether, tetrahydrofurfuryl (3-ethyl-3-oxetanylmethyl) ether, tetrabromophenyl (3-ethyl-3-oxetanylmethyl) ether, 2-tetrabromophenoxy Ethyl (3-ethyl-3-oxetanylmethyl) ether, tribromophenyl (3-ethyl-3-oxetanylmethyl) ether, 2-tribromophenoxyethyl (3-ethyl-3-oxetanylmethyl) Ether, 2-hydroxyethyl (3-ethyl-3-oxetanylmethyl) ether, 2-hydroxypropyl (3-ethyl-3-oxetanylmethyl) ether, butoxyethyl (3-ethyl-3-oxetanylmethyl) ether, pentachlorophenyl (3-ethyl-3-oxetanylmethyl) ether, pentabromophenyl (3-ethyl-3-oxetanylmethyl) ether and bornyl (3-ethyl-3-oxetanylmethyl) ether.

  Examples of the compound having 2 to 6 oxetane rings include 3,7-bis (3-oxetanyl) -5-oxa-nonane, 3,3 ′-(1,3- (2-methylenyl) propanediylbis ( Oxymethylene)) bis- (3-ethyloxetane), 1,4-bis [(3-ethyl-3-oxetanylmethoxy) methyl] benzene, 1,2-bis [(3-ethyl-3-oxetanylmethoxy) methyl ] Ethane, 1,3-bis [(3-ethyl-3-oxetanylmethoxy) methyl] propane, ethylene glycol bis (3-ethyl-3-oxetanylmethyl) ether, dicyclopentenyl bis (3-ethyl-3-oxetanyl) Methyl) ether, triethylene glycol bis (3-ethyl-3-oxetanylmethyl) ether, tetraethylene glycol (3-ethyl-3-oxetanylmethyl) ether, tricyclodecanediyldimethylene (3-ethyl-3-oxetanylmethyl) ether, trimethylolpropane tris (3-ethyl-3-oxetanylmethyl) ether, 1,4 -Bis (3-ethyl-3-oxetanylmethoxy) butane, 1,6-bis (3-ethyl-3-oxetanylmethoxy) hexane, pentaerythritol tris (3-ethyl-3-oxetanylmethyl) ether, pentaerythritol tetrakis ( 3-ethyl-3-oxetanylmethyl) ether, polyethylene glycol bis (3-ethyl-3-oxetanylmethyl) ether, dipentaerythritol hexakis (3-ethyl-3-oxetanylmethyl) ether, dipentaerythritol pentakis (3-ethyl-3-oxetanylmethyl) ether, dipentaerythritol tetrakis (3-ethyl-3-oxetanylmethyl) ether, caprolactone-modified dipentaerythritol hexakis (3-ethyl-3-oxetanylmethyl) ether, caprolactone-modified di Pentaerythritol pentakis (3-ethyl-3-oxetanylmethyl) ether, ditrimethylolpropanetetrakis (3-ethyl-3-oxetanylmethyl) ether, EO-modified bisphenol A bis (3-ethyl-3-oxetanylmethyl) ether, PO Modified bisphenol A bis (3-ethyl-3-oxetanylmethyl) ether, EO-modified hydrogenated bisphenol A bis (3-ethyl-3-oxetanylmethyl) ether, PO-modified hydrogenated bisphenol A Bis (3-ethyl-3-oxetanylmethyl) ether and EO-modified bisphenol F (3-ethyl-3-oxetanylmethyl) ether are mentioned.

  The content of the polymerizable monomer is preferably 5 to 75% by mass, more preferably 10 to 70% by mass with respect to the total solid content of the adhesive layer, from the viewpoint of good adhesive strength and peelability. 60 mass% is still more preferable.

  Moreover, it is preferable that it is 90 / 10-10 / 90, and, as for the ratio (mass ratio) of content of a polymerizable monomer and a binder, it is more preferable that it is 20 / 80-80 / 20.

Any known solvent can be used without limitation as long as it can form an adhesive layer, but N-methyl-2-pyrrolidone, 2-butanone, methyl amyl ketone, limonene, PGMEA (1-methoxy-2-propyl acetate), etc. N-methyl-2-pyrrolidone, 2-butanone, methyl amyl ketone or limonene, and PGMEA (1-methoxy-2-propyl acetate) are preferable.
The solvent is preferably used so that the solid content concentration of the adhesive composition is 5 to 40% by mass.

(Photopolymerization initiator)
The adhesive composition (and hence the adhesive layer) preferably contains a photopolymerization initiator, that is, a compound that generates radicals or acids upon irradiation with actinic rays or radiation.
By having a photopolymerization initiator, the adhesive composition is cured by radicals or acids by irradiating the adhesive layer with light, and the adhesiveness in the light irradiation part can be lowered. If this irradiation is performed, for example, in the central part of the adhesive layer and the adhesiveness is left only at the peripheral part, the area of the release layer that should be dissolved by solvent immersion at the time of peeling is reduced, so the time required for peeling is shortened. There are advantages.
As the compound that generates radicals or acids upon irradiation with actinic rays or radiation, for example, those known as polymerization initiators described below can be used.
As the polymerization initiator, as long as it has the ability to initiate a polymerization reaction (crosslinking reaction) in a polymer compound having a polymerizable group as the binder or a reactive compound having a polymerizable group as the polymerizable monomer. There is no particular limitation, and it can be appropriately selected from known polymerization initiators. For example, those having photosensitivity to visible light from the ultraviolet region are preferable. Further, it may be an activator that generates some kind of action with a photoexcited sensitizer and generates an active radical, and is an initiator that generates an acid according to the type of monomer and initiates cationic polymerization. Also good.
The polymerization initiator preferably contains at least one compound having a molecular extinction coefficient of at least about 50 within a range of about 300 nm to 800 nm (preferably 330 nm to 500 nm).

  As the polymerization initiator, known compounds can be used without limitation. For example, halogenated hydrocarbon derivatives (for example, those having a triazine skeleton, those having an oxadiazole skeleton, those having a trihalomethyl group), Acylphosphine compounds such as acylphosphine oxide, oxime compounds such as hexaarylbiimidazole and oxime derivatives, organic peroxides, thio compounds, ketone compounds, aromatic onium salts, ketoxime ethers, aminoacetophenone compounds, hydroxyacetophenones, azo series Examples thereof include compounds, azide compounds, metallocene compounds, organoboron compounds, iron arene complexes, and the like.

  Examples of the halogenated hydrocarbon compound having a triazine skeleton include those described in Wakabayashi et al., Bull. Chem. Soc. Japan, 42, 2924 (1969), a compound described in British Patent 1388492, a compound described in JP-A-53-133428, a compound described in German Patent 3337024, F.I. C. J. Schaefer et al. Org. Chem. 29, 1527 (1964), compounds described in JP-A-62-258241, compounds described in JP-A-5-281728, compounds described in JP-A-5-34920, US Pat. No. 4,221,976 And the compounds described in the book.

  Examples of the compound described in US Pat. No. 4,221,976 include compounds having an oxadiazole skeleton (for example, 2-trichloromethyl-5-phenyl-1,3,4-oxadiazole, 2- Trichloromethyl-5- (4-chlorophenyl) -1,3,4-oxadiazole, 2-trichloromethyl-5- (1-naphthyl) -1,3,4-oxadiazole, 2-trichloromethyl-5 -(2-naphthyl) -1,3,4-oxadiazole, 2-tribromomethyl-5-phenyl-1,3,4-oxadiazole, 2-tribromomethyl-5- (2-naphthyl) -1,3,4-oxadiazole; 2-trichloromethyl-5-styryl-1,3,4-oxadiazole, 2-trichloromethyl-5- (4-chlorostyryl) -1,3,4-oxadiazole, 2-trichloromethyl-5- (4-methoxystyryl) -1,3,4-oxadiazole, 2-trichloromethyl-5- (1-naphthyl) -1, 3,4-oxadiazole, 2-trichloromethyl-5- (4-n-butoxystyryl) -1,3,4-oxadiazole, 2-tripromomethyl-5-styryl-1,3,4 Oxadiazole, etc.).

  In addition, as polymerization initiators other than those described above, polyhalogen compounds (for example, four-phenyl acridine, such as 9-phenylacridine, 1,7-bis (9,9′-acridinyl) heptane), N-phenylglycine, and the like. Carbon bromide, phenyltribromomethylsulfone, phenyltrichloromethylketone, etc.), coumarins (for example, 3- (2-benzofuranoyl) -7-diethylaminocoumarin, 3- (2-benzofuroyl) -7- (1- Pyrrolidinyl) coumarin, 3-benzoyl-7-diethylaminocoumarin, 3- (2-methoxybenzoyl) -7-diethylaminocoumarin, 3- (4-dimethylaminobenzoyl) -7-diethylaminocoumarin, 3,3′-carbonylbis ( 5,7-di-n-propoxycoumarin), 3,3′-carbo Rubis (7-diethylaminocoumarin), 3-benzoyl-7-methoxycoumarin, 3- (2-furoyl) -7-diethylaminocoumarin, 3- (4-diethylaminocinnamoyl) -7-diethylaminocoumarin, 7-methoxy-3 -(3-pyridylcarbonyl) coumarin, 3-benzoyl-5,7-dipropoxycoumarin, 7-benzotriazol-2-ylcoumarin, JP-A-5-19475, JP-A-7-271028, JP 2002-363206, JP-A 2002-363207, JP-A 2002-363208, JP-A 2002-363209, etc.), acylphosphine oxides (for example, bis (2,4 , 6-Trimethylbenzoyl) -phenylphosphite Oxide, bis (2,6-dimethoxybenzoyl) -2,4,4-trimethyl-pentylphenylphosphine oxide, Lucirin TPO, etc.), metallocenes (for example, bis (η5-2,4-cyclopentadien-1-yl)- Bis (2,6-difluoro-3- (1H-pyrrol-1-yl) -phenyl) titanium, η5-cyclopentadienyl-η6-cumenyl-iron (1 +)-hexafluorophosphate (1-), etc.) Examples thereof include compounds described in JP-A Nos. 53-133428, 57-1819, 57-6096, and US Pat. No. 3,615,455.

  Examples of the ketone compound include benzophenone, 2-methylbenzophenone, 3-methylbenzophenone, 4-methylbenzophenone, 4-methoxybenzophenone, 2-chlorobenzophenone, 4-chlorobenzophenone, 4-bromobenzophenone, 2-carboxybenzophenone, 2-ethoxycarbonylbenzophenone, benzophenonetetracarboxylic acid or tetramethyl ester thereof, 4,4′-bis (dialkylamino) benzophenone (for example, 4,4′-bis (dimethylamino) benzophenone, 4,4′-bisdicyclohexyl) Amino) benzophenone, 4,4′-bis (diethylamino) benzophenone, 4,4′-bis (dihydroxyethylamino) benzophenone, 4-methoxy-4′-dimethylaminobenzene Zophenone, 4,4'-dimethoxybenzophenone, 4-dimethylaminobenzophenone, 4-dimethylaminoacetophenone, benzyl, anthraquinone, 2-t-butylanthraquinone, 2-methylanthraquinone, phenanthraquinone, xanthone, thioxanthone, 2-chloro -Thioxanthone, 2,4-diethylthioxanthone, fluorenone, 2-benzyl-dimethylamino-1- (4-morpholinophenyl) -1-butanone, 2-methyl-1- [4- (methylthio) phenyl] -2-morpholino -1-propanone, 2-hydroxy-2-methyl- [4- (1-methylvinyl) phenyl] propanol oligomer, benzoin, benzoin ethers (for example, benzoin methyl ether, benzoin ethyl ether, benzo Down propyl ether, benzoin isopropyl ether, benzoin phenyl ether, benzyl dimethyl ketal), acridone, chloro acridone, N- methyl acridone, N- butyl acridone, N- butyl - such as chloro acrylic pyrrolidone.

As the photopolymerization initiator, hydroxyacetophenone compounds, aminoacetophenone compounds, and acylphosphine compounds can also be suitably used. More specifically, for example, aminoacetophenone initiators described in JP-A-10-291969 and acylphosphine oxide initiators described in Japanese Patent No. 4225898 can also be used.
As the hydroxyacetophenone-based initiator, IRGACURE-184, DAROCUR-1173, IRGACURE-500, IRGACURE-2959, IRGACURE-127 (trade names: all manufactured by BASF) can be used. As the aminoacetophenone-based initiator, commercially available products IRGACURE-907, IRGACURE-369, and IRGACURE-379 (trade names: all manufactured by BASF) can be used. As the aminoacetophenone-based initiator, a compound described in JP-A-2009-191179 in which an absorption wavelength is matched with a long-wave light source such as 365 nm or 405 nm can also be used. As the acylphosphine-based initiator, commercially available products such as IRGACURE-819 and DAROCUR-TPO (trade names: both manufactured by BASF) can be used.

  More preferred examples of the photopolymerization initiator include oxime compounds. Specific examples of the oxime initiator include compounds described in JP-A No. 2001-233842, compounds described in JP-A No. 2000-80068, and compounds described in JP-A No. 2006-342166.

  Examples of oxime compounds such as oxime derivatives that are preferably used as a polymerization initiator in the present invention include 3-benzoyloxyiminobutane-2-one, 3-acetoxyiminobutan-2-one, and 3-propionyloxyimibutane. 2-one, 2-acetoxyiminopentan-3-one, 2-acetoxyimino-1-phenylpropan-1-one, 2-benzoyloxyimino-1-phenylpropan-1-one, 3- (4- Toluenesulfonyloxy) iminobutan-2-one and 2-ethoxycarbonyloxyimino-1-phenylpropan-1-one.

Examples of oxime ester compounds include J.M. C. S. Perkin II (1979) pp. 1653-1660), J.M. C. S. Perkin II (1979) pp. 156-162, Journal of Photopolymer Science and Technology (1995) pp. 202-232, compounds described in JP-A No. 2000-66385, compounds described in JP-A No. 2000-80068, JP-T 2004-534797, JP-A No. 2006-342166, and the like.
IRGACURE-OXE01 (manufactured by BASF), IRGACURE-OXE02 (manufactured by BASF), and TR-PBG-304 (manufactured by Changzhou Strong Electronic New Materials Co., Ltd.) are also suitably used as commercial products.

  Further, as oxime ester compounds other than those described above, compounds described in JP-T 2009-519904, in which an oxime is linked to the N-position of carbazole, compounds described in US Pat. No. 7,626,957 in which a hetero substituent is introduced into the benzophenone moiety, A compound described in Japanese Patent Application Laid-Open No. 2010-15025 and US Patent Publication No. 2009-292039 in which a nitro group is introduced at the dye site, a ketoxime compound described in International Patent Publication No. 2009-131189, the triazine skeleton and the oxime skeleton are identical A compound described in US Pat. No. 7,556,910 contained in the molecule, a compound described in JP-A-2009-221114 having an absorption maximum at 405 nm and good sensitivity to a g-line light source, and the like may be used. .

Preferably, it can also be suitably used for the cyclic oxime compounds described in JP-A-2007-231000 and JP-A-2007-322744. Among the cyclic oxime compounds, the cyclic oxime compounds fused to the carbazole dyes described in JP2010-32985A and JP2010-185072A in particular have high light absorptivity from the viewpoint of high sensitivity. preferable.
Further, the compound described in JP-A-2009-242469 having an unsaturated bond at a specific site of the oxime compound can be preferably used because it can achieve high sensitivity by regenerating active radicals from polymerization inert radicals. it can.

  Most preferably, the oxime compound which has a specific substituent shown by Unexamined-Japanese-Patent No. 2007-267979 and the oxime compound which has a thioaryl group shown by Unexamined-Japanese-Patent No. 2009-191061 are mentioned.

  A known method can be used for the molar extinction coefficient of the compound. Specifically, for example, 0.01 g of an ultraviolet-visible spectrophotometer (Varian Inc., Carry-5 spctrophotometer) is used with an ethyl acetate solvent. It is preferable to measure at a concentration of / L.

  The polymerization initiator used in the present invention may be used in combination of two or more as required.

  As compounds that generate radicals or acids upon irradiation with actinic rays or radiation, from the viewpoint of exposure sensitivity, trihalomethyltriazine compounds, benzyldimethylketal compounds, α-hydroxyketone compounds, α-aminoketone compounds, acylphosphine compounds, phosphine Oxide compounds, metallocene compounds, oxime compounds, triallylimidazole dimers, onium compounds, benzothiazole compounds, benzophenone compounds, acetophenone compounds and derivatives thereof, cyclopentadiene-benzene-iron complexes and salts thereof, halomethyloxadiazole compounds, 3- Compounds selected from the group consisting of aryl substituted coumarin compounds are preferred.

  More preferred are trihalomethyltriazine compound, α-aminoketone compound, acylphosphine compound, phosphine oxide compound, oxime compound, triallylimidazole dimer, onium compound, benzophenone compound, acetophenone compound, trihalomethyltriazine compound, α-aminoketone Most preferred is at least one compound selected from the group consisting of compounds, oxime compounds, triallylimidazole dimers, and benzophenone compounds, and most preferred are oxime compounds.

Moreover, the compound which generate | occur | produces an acid by irradiation of actinic light or a radiation has a preferable compound which generate | occur | produces an acid whose pKa is 4 or less among these, and a compound which generate | occur | produces an acid whose pKa is 3 or less.
Examples of the acid-generating compound include trichloromethyl-s-triazines, sulfonium salts and iodonium salts, quaternary ammonium salts, diazomethane compounds, imide sulfonate compounds, and oxime sulfonate compounds. Among these, it is preferable to use an oxime sulfonate compound from the viewpoint of high sensitivity. These acid generators can be used singly or in combination of two or more.

  Specific examples of the acid generator include acid generators described in paragraph numbers [0073] to [0095] of JP2012-8223A.

  The content of the compound that generates radicals or acids upon irradiation with actinic rays or radiation of the present invention (total content in the case of 2 or more) is 0.1% by mass or more and 50% by mass with respect to the total solid content of the adhesive layer. % Is preferably 0.1% by mass or more and 30% by mass or less, and more preferably 0.1% by mass or more and 20% by mass or less.

(Thermal polymerization initiator)
The adhesive composition (and thus the adhesive layer) of the present invention preferably contains a thermal polymerization initiator, that is, a compound that generates a radical or an acid by heat.

In particular, when the polymer compound having a polymerizable group or the polymerizable monomer is contained as the binder, it is preferable to contain a thermal polymerization initiator.
After the adhesive layer and the release layer are joined due to the presence of the thermal polymerization initiator, the adhesive layer is cured by heating to a temperature higher than the decomposition temperature of the thermal polymerization initiator. There is an advantage that high chemical bonding can be performed.

[Compounds that generate radicals by heat]
As the compound that generates radicals by heat (hereinafter, also simply referred to as a thermal radical generator), a known thermal radical generator can be used.
The thermal radical generator is a compound that generates radicals by heat energy and initiates or accelerates a polymerization reaction of a polymer compound having a polymerizable group and a polymerizable monomer. In the case of performing temporary adhesion between the member to be treated and the adhesive support after irradiating heat to the adhesive layer formed using the adhesive composition by adding a thermal radical generator, As the crosslinking reaction proceeds in the reactive compound having a crosslinkable group by heat, the adhesiveness (that is, tackiness and tackiness) of the adhesive layer can be lowered in advance, as will be described in detail later.
On the other hand, in the case of the reactive compound having a crosslinkable group by heat in the case where heat is applied to the adhesive layer in the adhesive support after temporary bonding between the member to be processed and the adhesive support. By proceeding with the crosslinking reaction, the adhesive layer becomes tougher, and cohesive failure of the adhesive layer that is likely to occur when the member to be treated is subjected to mechanical or chemical treatment can be suppressed. That is, the adhesiveness in the adhesive layer can be improved.
Preferred examples of the thermal radical generator include compounds that generate an acid or a radical upon irradiation with actinic rays or radiation as described above, and compounds having a thermal decomposition point of 130 ° C to 250 ° C, preferably 150 ° C to 220 ° C. Can be preferably used.
Thermal radical generators include aromatic ketones, onium salt compounds, organic peroxides, thio compounds, hexaarylbiimidazole compounds, ketoxime ester compounds, borate compounds, azinium compounds, metallocene compounds, active ester compounds, carbon halogens. Examples thereof include a compound having a bond and an azo compound. Among these, an organic peroxide or an azo compound is more preferable, and an organic peroxide is particularly preferable.
Specific examples include compounds described in paragraphs 0074 to 0118 of JP-A-2008-63554.

[Compound that generates acid by heat]
As a compound that generates an acid by heat (hereinafter, also simply referred to as a thermal acid generator), a known thermal acid generator can be used.
The thermal acid generator is preferably a compound having a thermal decomposition point of 130 ° C to 250 ° C, more preferably 150 ° C to 220 ° C.
The thermal acid generator is, for example, a compound that generates a low nucleophilic acid such as sulfonic acid, carboxylic acid, or disulfonylimide by heating.
As the acid generated from the thermal acid generator, pKa is as strong as 2 or less, sulfonic acid or alkyl substituted with an electron withdrawing group is preferably arylcarboxylic acid, disulfonylimide substituted with an electron withdrawing group, or the like. Examples of the electron withdrawing group include a halogen atom such as a fluorine atom, a haloalkyl group such as a trifluoromethyl group, a nitro group, and a cyano group.
As the thermal acid generator, the above-mentioned (D) photoacid generator that generates an acid upon irradiation with actinic rays or radiation can be applied. Examples include onium salts such as sulfonium salts and iodonium salts, N-hydroxyimide sulfonate compounds, oxime sulfonates, o-nitrobenzyl sulfonates, and the like.
Moreover, in this invention, it is also preferable to use the sulfonic acid ester which does not generate | occur | produce an acid substantially by irradiation of actinic light or a radiation, and generate | occur | produces an acid by heat.
It is determined that there is no change in the spectrum by measuring infrared absorption (IR) spectrum and nuclear magnetic resonance (NMR) spectrum before and after the exposure of the compound that the acid is not substantially generated by irradiation with actinic ray or radiation. can do.
The molecular weight of the sulfonic acid ester is preferably 230 to 1,000, and more preferably 230 to 800.
As the sulfonic acid ester usable in the present invention, a commercially available one may be used, or one synthesized by a known method may be used. The sulfonic acid ester can be synthesized, for example, by reacting a sulfonyl chloride or a sulfonic acid anhydride with a corresponding polyhydric alcohol under basic conditions.
A thermal acid generator may be used individually by 1 type, or may use 2 or more types together.

  The content of the thermal polymerization initiator in the adhesive composition of the present invention is such that the adhesive layer has a reduced adhesiveness when heat irradiation is performed before temporary bonding between the member to be treated and the adhesive support, and From the viewpoint of improving the adhesiveness of the adhesive layer when heat irradiation is performed after temporary adhesion between the member to be processed and the adhesive support, 0.01 to 50% by weight is based on the total solid content of the adhesive composition. Preferably, 0.1 to 20% by weight is more preferable, and 0.5 to 10% by weight is most preferable.

<Other ingredients>
In addition to the above components, the adhesive composition (and thus the adhesive layer) can further contain various compounds depending on the purpose within a range not impairing the effects of the present invention.
For example, a sensitizing dye, a chain transfer agent, a polymerization inhibitor, and a surfactant can be preferably used.
Specific examples and preferred examples of the surfactant that the adhesive composition (and thus the adhesive layer) may have are the same as those of the surfactant that the release layer composition may have.

  In this invention, it is preferable to have a binder, a polymerizable monomer, a photopolymerization initiator, and a thermal polymerization initiator.

  Next, an adhesive support and a method for manufacturing a semiconductor device using the above-described temporary bonding layer for manufacturing a semiconductor device according to the present invention will be described.

  1A, 1B, and 1C are a schematic cross-sectional view illustrating temporary bonding between an adhesive support and a device wafer, a schematic cross-sectional view illustrating a device wafer temporarily bonded by the adhesive support, and an adhesion, respectively. It is a schematic sectional drawing which shows the state by which the device wafer temporarily bonded by the adhesive support body was thinned.

In the embodiment of the present invention, as shown in FIG. 1A, first, an adhesive support 100 in which an adhesive layer 11 is provided on a carrier substrate 12 is prepared.
The material of the carrier substrate 12 is not particularly limited, and examples thereof include a silicon substrate, a glass substrate, and a metal substrate. However, a silicon substrate that is typically used as a substrate of a semiconductor device is hardly contaminated, and a semiconductor device is manufactured. In view of the fact that an electrostatic chuck widely used in the process can be used, a silicon substrate is preferable.
The thickness of the carrier substrate 12 is, for example, in the range of 300 μm to 5 mm, but is not particularly limited.

The adhesive layer 11 is obtained by applying the adhesive layer composition of the present invention on the carrier substrate 12 using a conventionally known spin coating method, spray method, roller coating method, flow coating method, doctor coating method, dipping method or the like. It can be formed by coating and then drying.
The thickness of the adhesive layer 11 is, for example, in the range of 1 to 500 μm, but is not particularly limited.

  Next, the temporary bonding between the adhesive support obtained as described above and the device wafer, the thinning of the device wafer, and the detachment of the device wafer from the adhesive support will be described in detail.

As shown in FIG. 1A, the device wafer 60 (member to be processed) is formed by providing a plurality of device chips 62 on a surface 61a of a silicon substrate 61. Further, a release layer 71 is provided on the surface of the device wafer 60 on the device chip 62 side.
Here, the thickness of the silicon substrate 61 is in the range of 200 to 1200 μm, for example.
Then, the surface 71 of the release layer 71 is pressed against the adhesive layer 11 of the adhesive support 100. As a result, as shown in FIG. 1B, the surface 71 a of the release layer 71 and the adhesive layer 11 are bonded to each other, and the temporary bonding layer 80 including the release layer 71 and the adhesive layer 11 is formed.
After that, if necessary, the adhesive support body 100 and the device wafer 60 may be heated (irradiated with heat) to make the adhesive layer more tough. Thereby, cohesive failure of the adhesive layer that is likely to occur when the device wafer 60 is subjected to mechanical or chemical treatment described later can be suppressed, and thus the adhesiveness of the adhesive support 100 can be improved. In particular, the adhesive layer preferably contains a thermal polymerization initiator from the viewpoint of promoting a crosslinking reaction in a reactive compound having a crosslinkable group by heat.
The heating temperature is preferably 50 ° C to 300 ° C.

Next, by performing mechanical or chemical treatment on the back surface 61b of the silicon substrate 61, specifically, thinning treatment such as grinding or chemical mechanical polishing (CMP), as shown in FIG. The thickness of the silicon substrate 61 is reduced (for example, a thickness of 1 to 200 μm) to obtain a thin device wafer 60 ′.
Further, as a mechanical or chemical treatment, a through hole (not shown) penetrating the silicon substrate is formed from the back surface 61b ′ of the thin device wafer 60 ′ after the thinning process, and the silicon is penetrated into the through hole. You may perform the process which forms an electrode (not shown) as needed.

Next, the surface 61 a of the thin device wafer 60 ′ is detached from the adhesive layer 11 of the adhesive support 100.
The method of detachment is not particularly limited, but the adhesive layer 110 is brought into contact with the stripping solution, and then the thin device wafer 60 ′ is slid with respect to the adhesive support 100 as necessary. Alternatively, it is preferable that the thin device wafer 60 ′ is peeled off from the adhesive support 100. Since the release layer in the temporary bonding layer has a high affinity for the release liquid, the temporary adhesion between the adhesive layer 110 and the surface 61a of the thin device wafer 60 ′ can be easily released by the above method. At this time, ultrasonic waves may be applied to the peeling solvent. The ultrasonic wave to be applied preferably has a frequency in the range of 35 to 950 kHz, and more preferably 40 to 500 kHz. Moreover, you may spray a peeling solvent with respect to a peeling layer. At this time, the spraying speed of the peeling solvent is preferably 5 ml / min to 100 ml / min, more preferably 20 ml / min to 50 ml / min. Further, the peeling solvent may be heated. The temperature of the peeling solvent at this time is preferably 40 ° C. to the boiling point of the peeling solvent or 200 ° C., more preferably 60 ° C. to the boiling point of the peeling solvent or 150 ° C. Further, the peeling solvent may be stirred. The stirring speed of the peeling solvent at this time is preferably 30 rpm to 900 rpm, more preferably 200 rpm to 500 rpm.

  After the thin device wafer 60 ′ is detached from the adhesive support 100, various known processes are performed on the thin device wafer 60 ′ as necessary to manufacture a semiconductor device having the thin device wafer 60 ′. To do.

  Hereinafter, the stripping solution will be described in detail.

  The release liquid is not particularly limited as long as it dissolves the release layer binder. The solvent may be a nonpolar solvent such as benzene or hexane, or a polar solvent such as water or alcohol. The solvent may be an inorganic solvent such as water, and alcohols, ketones, ethers, esters, aliphatic and aromatic hydrocarbons, halogenated hydrocarbons, amides, cellosolves, etc. The organic solvent may be used. Examples of alcohols include n-butanol, 2-butanol, cyclohexanol, isopropyl alcohol, t-butyl alcohol, glycerin, ethylene glycol, 2-methyl-2,4-pentadiol, phenol, parachlorophenol, and the like. Ketones include acetone, methyl ethyl ketone, methyl isobutyl ketone, cyclohexanone, cyclopentanone, 2-pentanone, 2-hexanone, 2-heptanone, and the like. Examples of ethers include diethyl ether, tetrahydrofuran, dioxane, anisole and the like. Esters include ethyl acetate, butyl acetate, methyl lactate and the like. Aliphatic and aromatic hydrocarbons include n-hexane, benzene, toluene, xylene and the like. Examples of halogenated hydrocarbons include chloroform, dichloromethane, carbon tetrachloride, dichloroethane, trichloroethane, trichloroethylene, tetrachloroethylene, chlorobenzene, and the like. Examples of amides include dimethylformamide and dimethylacetamide. Examples of cellosolves include methyl cellosolve, ethyl cellosolve, and methyl cellosolve. These solvents are used alone or in admixture of two or more kinds of solvents selected arbitrarily.

As the stripper, at least one solvent selected from the group consisting of hydrocarbon solvents and ether solvents can be more preferably used. Examples of the hydrocarbon solvent include linear or branched alkanes and cycloalkanes. Specifically, pentane, cyclopentane, 2-methylbutane, 3-methylpentane, hexane, 2,2-dimethylbutane, 2,3-dimethylbutane, heptane, octane, 2,2,4-trimethylpentane, 2, Use 2,3-trimethylhexane, nonane, decane, undecane, dodecane, 2,2,4,6,6-pentamethylheptane, tridecane, pentadecane, tetradecane, hexadecane, cyclopentane, cyclohexane, cycloheptane, cyclooctane, etc. be able to. These organic solvents can be used alone or in combination. Further, terpene-based saturated hydrocarbons can also be used as the solvent. Specifically, pinane, bornane, caran, fencan, tujan, o-menthane, m-menthane, p-menthane, diphenylmenthane, limonene, α Examples include terpinene, β-terpinene, γ-terpinene, bornane, norbornane, pinane, α-pinene, β-pinene, caran, longifolene, and abietane. Further, tetrahydrofuran (abbreviation: THF) can also be preferably used.
These saturated hydrocarbon solvents preferably have 6 to 10 carbon atoms, more preferably 7 to 9 carbon atoms. 6 or more carbon atoms are preferable and 7 or more carbon atoms are more preferable in terms of suppression of volatilization of the solvent.

As the ether solvent, tetrahydrofuran (abbreviation: THF), cyclopentyl methyl ether, tertiary butyl methyl ether, and anisole can be used.
These ether solvents preferably have 4 to 10 carbon atoms, more preferably 4 to 9 carbon atoms. The number of carbon atoms is preferably 4 or more from the viewpoint of suppressing the volatilization of the solvent.

  The stripping solution is preferably cyclopentane, n-hexane, cyclohexane, n-heptane, limonene, N-methyl-2-pyrrolidone, p-menthane, or tetrahydrofuran.

  In the present invention, the method of temporary bonding is not limited as long as the device wafer and the carrier substrate are bonded so that the temporary bonding layer having the peeling layer and the adhesive layer is interposed, and the peeling layer is formed on the adhesive layer. A provisional bonding layer may be prepared in advance, and the adhesive layer and the release layer in the temporary bonding layer may be bonded to the carrier substrate and the device wafer, respectively.

  The present invention also relates to a laminate having a support such as a carrier substrate, a member to be processed such as a device wafer, and a temporary bonding layer provided between the support and the member to be processed.

Next, a conventional embodiment will be described.
FIG. 2 is a schematic cross-sectional view for explaining the release of the temporarily bonded state between the conventional adhesive support and the device wafer.
In the conventional embodiment, as shown in FIG. 2, an adhesive support in which an adhesive layer 11 ′ formed of a conventional temporary adhesive is provided on a carrier substrate 12 as an adhesive support. Otherwise, the adhesive support 100 ′ and the device wafer are temporarily bonded in the same manner as described with reference to FIGS. 1A and 1B, and the silicon substrate is thinned on the device wafer. Then, similar to the procedure described with reference to FIGS. 2A and 2C, the thin device wafer 60 ′ is peeled from the adhesive support 100 ′.

However, according to the conventional temporary adhesive, the target member can be temporarily supported easily and easily, and it is difficult to easily release the temporary support for the processed member without damaging the processed member. . For example, in order to make sufficient temporary adhesion between the device wafer and the carrier substrate, if a highly temporary adhesive is used among the conventional temporary adhesives, the temporary adhesion between the device wafer and the carrier substrate tends to be too strong. Become. Therefore, in order to release this excessively strong temporary adhesion, for example, as shown in FIG. 3, a tape (for example, dicing tape) 70 is attached to the back surface 61b ′ of the thin device wafer 60 ′, and the adhesive support 120 is thinned. When the device wafer 60 ′ is peeled off, there is a tendency that the device chip 62 is damaged due to the bump 63 being detached from the device chip 62 provided with the bump 63.
On the other hand, when a conventional temporary adhesive having low adhesiveness is employed, the temporary adhesion between the device wafer and the carrier substrate is too weak, and a problem that the device wafer cannot be reliably supported by the carrier substrate is likely to occur.

  However, the adhesive layer formed by the adhesive composition of the present invention exhibits sufficient adhesiveness, and the temporary adhesion between the device wafer 60 and the adhesive support 100 is particularly peeled off to the adhesive layer 11. It can be easily released by bringing the liquid into contact. That is, according to the peeling layer in the temporary bonding layer of the present invention, the device wafer 60 can be temporarily supported easily and easily, and the temporary support to the thin device wafer 60 ′ can be easily performed without damaging the thin device wafer 60 ′. Can be released.

  Furthermore, when the adhesive composition (and thus the adhesive layer) in the present invention further contains a photopolymerization initiator or a thermal polymerization initiator and a radical polymerizable monomer, the adhesive layer 11 is , It can be an adhesive layer whose adhesiveness is reduced by irradiation with actinic rays, radiation or heat. In this case, specifically, the adhesive layer is an adhesive layer before being irradiated with actinic light, radiation, or heat, but in an area that has been irradiated with actinic light, radiation, or heat. , It can be a layer in which the adhesiveness decreases or disappears.

Therefore, in the present invention, before the device wafer 60 and the adhesive support 100 are bonded to each other, the actinic ray or the active ray or the surface of the adhesive layer 11 of the adhesive support 100 is bonded to the release layer 60. Radiation or heat may be applied.
For example, the adhesive layer is converted into an adhesive layer in which a low-adhesive region and a high-adhesive region are formed by irradiation with actinic light, radiation, or heat, and then temporarily bonded by an adhesive support of a member to be processed. May be performed. Hereinafter, this embodiment will be described.

  FIG. 3A shows a schematic cross-sectional view illustrating exposure of the adhesive support, and FIG. 3B shows a schematic top view of the mask.

  First, the actinic ray or radiation 50 is irradiated (that is, exposed) to the adhesive layer 11 of the adhesive support 100 through the mask 40.

As shown in FIGS. 3A and 3B, the mask 40 includes a light transmission region 41 provided in the central region and a light shielding region 42 provided in the peripheral region.
Therefore, the exposure is pattern exposure in which the central region of the adhesive layer 11 is exposed but the peripheral region surrounding the central region is not exposed.

  FIG. 4A shows a schematic cross-sectional view of a pattern-exposed adhesive support, and FIG. 4B shows a schematic top view of the pattern-exposed adhesive support.

As described above, when the adhesive layer 11 is an adhesive layer whose adhesiveness is reduced by irradiation with actinic rays or radiation, the adhesive support 100 is formed as shown in FIG. As shown to 4B, it converts into the adhesive support body 110 which has the adhesive layer 21 in which the low adhesive area | region 21A and the high adhesive area | region 21B were formed in the center area | region and the peripheral area, respectively.
Here, the “low adhesion region” in the present specification means a region having lower adhesion compared to the “high adhesion region” and is a region having no adhesion (that is, “non-adhesion region”). Sex region "). Similarly, the “high adhesion region” means a region having higher adhesion than the “low adhesion region”.

  The adhesive support 110 is provided with the low adhesive region 21A and the high adhesive region 21B by pattern exposure using the mask 40, and the areas of the light transmitting region and the light shielding region in the mask 40 are as follows. The shape can be controlled on the order of microns or nanometers. Therefore, the area and shape of the high adhesive region 21B and the low adhesive region 21A formed on the adhesive layer 21 of the adhesive support 110 by pattern exposure can be finely controlled, so that the adhesive layer as a whole can be controlled. Adhesiveness can more reliably and easily temporarily support the silicon substrate 61 of the device wafer 60, and more easily release the temporary support of the thin device wafer 60 ′ to the silicon substrate without damaging the thin device wafer 60 ′. Highly accurate and easily controllable to the possible adhesiveness.

  Further, although the surface properties of the high adhesive region 21B and the low adhesive region 21A in the adhesive support 110 are different from each other by pattern exposure, they are integrated as a structure. Therefore, there is no significant difference in mechanical properties between the high adhesive region 21B and the low adhesive region 21A, and the surface 61a of the silicon substrate 61 of the device wafer 60 is bonded to the adhesive layer 21 of the adhesive support 110, Next, even if the back surface 61b of the silicon substrate 61 is subjected to a thinning process or a process of forming a silicon through electrode, the region of the back surface 61b corresponding to the high adhesive region 21B of the adhesive layer 21 and the low adhesive region 21A A difference in pressure (for example, grinding pressure or polishing pressure) related to the above processing hardly occurs between the corresponding back surface 61b regions, and the high adhesive region 21B and the low adhesive region 21A are used in the above processing. There is little impact on processing accuracy. This is particularly effective in obtaining a thin device wafer 60 ′ having a thickness of 1 to 200 μm, which is likely to cause the above problem.

  Therefore, in the form using the adhesive support 110, the silicon substrate 61 is temporarily supported more reliably and easily while suppressing the influence on the processing accuracy when the silicon substrate 61 of the device wafer 60 is subjected to the above processing. In addition, the temporary support to the thin device wafer 60 ′ can be easily released without damaging the thin device wafer 60 ′.

  Further, when the adhesive layer 11 is an adhesive layer whose adhesiveness is reduced by irradiation with actinic light, radiation or heat, for example, by irradiating such adhesive layer with actinic light, radiation or heat. The adhesive layer may be temporarily bonded by the adhesive support after the adhesive layer is converted from the inner surface on the substrate side to the outer surface and the adhesive property is lowered. Hereinafter, this embodiment will be described.

  FIG. 5 is a schematic cross-sectional view illustrating irradiation of actinic rays, radiation, or heat to the adhesive support.

First, as shown in FIG. 5, the adhesive support 100 is irradiated from the inner surface 31b on the substrate side to the outer surface 31a by irradiating the outer surface of the adhesive layer 11 with active light, radiation, or heat 50 ′. It is converted into an adhesive support 120 having an adhesive layer 31 whose adhesiveness has been lowered.
That is, the adhesive layer 31 has a low adhesive region 31A on the outer surface 31a side and a high adhesive region 31B on the inner surface 31b side.
Such an adhesive layer 31 is irradiated with actinic rays, radiation, or heat 50, and the outer surface 31a is sufficiently irradiated with actinic rays, radiation, or heat 50, but is active by the inner surface 31b. It can be easily formed by setting the irradiation amount so that light, radiation or heat 50 does not reach.
Here, such a change in the irradiation amount can be easily performed by changing the setting of the exposure machine and the heating device, so that the equipment cost can be suppressed and the adhesive layers 21 and 31 can be formed in a large amount. It is not time consuming.
As described above, the adhesive layer 31 can be easily formed.

Furthermore, each of the adhesiveness on the outer surface 31a and the adhesiveness on the inner surface 31b can be accurately controlled by selecting a material constituting the adhesive layer 11 and adjusting an irradiation amount of active light, radiation, or heat. Is.
As a result, the adhesiveness of the adhesive layer 31 to each of the substrate 12 and the silicon substrate 61 can be temporarily and easily supported by the silicon substrate 61 of the device wafer 60 without damaging the thin device wafer 60 ′. The adhesiveness to such an extent that temporary support of the thin device wafer 60 ′ with respect to the silicon substrate can be easily released can be controlled with high accuracy and easily.

  Therefore, the form using the adhesive support 120 can also temporarily support the silicon substrate 61 more reliably and easily when the above-described processing is performed on the silicon substrate 61 of the device wafer 60, and damage the thin device wafer 60 ′. It is preferable that the temporary support to the thin device wafer 60 ′ can be released more easily without giving

  The method for manufacturing a semiconductor device of the present invention is not limited to the above-described embodiment, and appropriate modifications and improvements can be made.

  In the above-described embodiment, the adhesive layer formed from the adhesive composition of the present invention is provided on the carrier substrate before provisional bonding of the device wafer to constitute the adhesive support. The temporary bonding layer may be formed by being provided on the release layer. In this case, the adhesive layer and the release layer in the temporary bond layer are bonded to the carrier substrate and the device wafer, respectively.

  For example, the mask used for pattern exposure may be a binary mask or a halftone mask.

  The exposure is mask exposure through a mask, but may be selective exposure by drawing using an electron beam or the like.

  In the above-described embodiment, the adhesive layer has a single layer structure, but the adhesive layer may have a multilayer structure. As a method for forming an adhesive layer having a multilayer structure, before irradiating with actinic rays or radiation, a method of applying the adhesive composition stepwise by the above-mentioned conventionally known method or irradiating with actinic rays or radiation. Later, the method of apply | coating an adhesive composition by the conventionally well-known method mentioned above is mentioned. In the form in which the adhesive layer has a multilayer structure, for example, when the adhesive layer 11 is an adhesive layer whose adhesiveness is reduced by irradiation with active light, radiation, or heat, irradiation with active light, radiation, or heat Therefore, the adhesiveness of the adhesive layer as a whole can be reduced by reducing the adhesiveness between the respective layers.

In the above-described embodiment, the silicon substrate is exemplified as the member to be processed supported by the adhesive support. However, the present invention is not limited to this, and in the semiconductor device manufacturing method, mechanical or chemical Any member to be processed that can be subjected to various processing may be used.
For example, the member to be processed can include a compound semiconductor substrate. Specific examples of the compound semiconductor substrate include a SiC substrate, a SiGe substrate, a ZnS substrate, a ZnSe substrate, a GaAs substrate, an InP substrate, and a GaN substrate. Can be mentioned.

  Furthermore, in the above-described embodiment, as the mechanical or chemical treatment for the silicon substrate supported by the adhesive support, the thinning treatment of the silicon substrate and the formation treatment of the silicon through electrode were mentioned. However, the present invention is not limited to these, and any processing necessary in the method for manufacturing a semiconductor device can be used.

  In addition, the light transmissive region and the light shielding region in the mask, the high adhesive region and the low adhesive region in the adhesive layer, and the shape, size, number, arrangement location, etc. of the device chip in the device wafer, etc. Is arbitrary as long as the present invention can be achieved, and is not limited.

  EXAMPLES Hereinafter, the present invention will be described more specifically with reference to examples. However, the present invention is not limited to the following examples unless it exceeds the gist thereof. Unless otherwise specified, “part” and “%” are based on mass.

<Formation of adhesive support>
Each liquid adhesive composition having the composition shown in Table 1 below was applied to a 4-inch Si wafer with a spin coater (Opticat MS-A100, 1200 rpm, 30 seconds, manufactured by Mikasa) and then baked at 100 ° C. for 30 seconds to obtain a thickness. A wafer 1 (that is, an adhesive support) provided with a 10 μm adhesive layer was formed.

  The compounds described in Table 1 are as follows.

S1: Methyl amyl ketone S2: PGMEA
S3: N-methyl-2-pyrrolidone

〔binder〕

Polymer compound (2)
NK oligo EA7440 (manufactured by Shin-Nakamura Chemical, novolak resin having carboxylic acid group and radical polymerizable group)

Polymer compound (3)
Durimide 10 (manufactured by Fujifilm, polyimide resin)

(Polymerizable monomer)
Polymerizable monomer (1): UA-1100H (manufactured by Shin-Nakamura Chemical, tetrafunctional urethane acrylate)

(Photopolymerization initiator)
Photopolymerization initiator (1): IRGACURE OXE 02 (manufactured by BASF)

(Thermal polymerization initiator)
Thermal polymerization initiator (1): Perbutyl Z (manufactured by NOF Corporation, t-butyl peroxybenzoate)

<Creation of processed material>
Each liquid release layer composition having the composition shown in Table 2 below is applied to a spin coater (Opticaat manufactured by Mikasa) on the side where electrodes of a 4-inch Si wafer on which Cu electrodes having a height of 10 μm and a diameter of 50 μm are formed at intervals of 200 μm exist. MS-A100, 1200 rpm, 30 seconds) and then baked at 100 ° C. for 300 seconds to form a wafer 2 (that is, a member to be processed) provided with a release layer having a thickness of 20 μm.

Resin (1): Durimide 10 (manufactured by Fujifilm, polyimide resin)
Resin (2): MACROMELT 6901 (manufactured by Henkel, nylon)
Resin (3): Polymethyl methacrylate (Aldrich, molecular weight 50,000)
Resin (4): Cellulose acetate (Aldrich, molecular weight 70,000)
Resin (5): Clearon P-135 (manufactured by Yasuhara Chemical Co., Ltd.)

<Creation of adhesive test piece>
Test pieces were prepared by pressure-bonding and baking wafers 1 and 2 in the combinations shown in Table 3 below.

[Crimping]
A 4-inch Si wafer with nothing applied on the surface or a 4-inch Si wafer with a release layer (hereinafter referred to as wafer 2) was divided into sample pieces of 5 mm × 20 mm. Similarly, the sample pieces of the wafer 1 having a size of 5 mm × 20 mm are overlapped so that the adhesive layer is in contact with a wafer having no surface coated thereon or the peeling layer of the wafer 2 with a square of 5 mm × 5 mm. And pressure adhesion at 25 ° C. and 20 N / cm ² for 30 seconds.

[Bake]
After pressure bonding, the film was heated at 180 ° C. for 60 seconds.

<Measurement of adhesive strength of laminate specimen>
Using the tensile tester (product made from IMADA), the tensile strength of the prepared test piece was measured in a direction along the surface of the adhesive layer under the condition of 250 mm / min. The results are shown in Table 3 below.

<Measurement of peelability of laminate specimen>
The created sample piece was brought into contact with the stripping solution described in Table 3 based on the corresponding stripping acceleration treatment.
The sample described as “None” as the peeling promotion treatment was immersed in a peeling solvent at 25 ° C. and allowed to stand.
In the case of “ultrasonic” described as peeling promotion treatment, after immersing a sample piece in a peeling solvent at 25 ° C., ultrasonic waves are applied to the peeling solvent by a tabletop ultrasonic cleaner (Branson 2510 manufactured by Branson). Applied.
In the case of “jetting” as the exfoliation accelerating treatment, after the sample piece is immersed in the exfoliation solvent at 25 ° C., the exfoliation solvent is 20 ml / min with a plunger pump (NP-KX-520 manufactured by Nippon Seimitsu Kagaku). The amount of the ejected liquid was sprayed from the nozzle having an inner diameter of 0.2 mm toward the bonding layer of the sample piece.
The sample described as “heating” as the peeling acceleration treatment was immersed in a peeling solvent heated to 100 ° C. and left to stand.
The sample described as “stirring” as the peeling acceleration treatment was obtained by immersing and fixing the sample piece in a peeling solvent at 25 ° C., and then stirring the peeling solvent at a speed of 300 rpm with a stirrer.
Two sample pieces were immersed until they were naturally peeled, and the time was measured.
Moreover, about the to-be-processed member after peeling, the influence on the side in which an electrode exists was observed by SEM. The observed contents are “hole defect” (hole defect on the wafer surface due to application of ultrasonic waves), “electrode defect” (detachment of the electrode from the wafer surface by jetting / stirring of the peeling solvent), “warp” (adhesion layer) The presence or absence of warping of the wafer due to thermal expansion.
The results are shown in Table 3 below.

As described above, Comparative Example 1 that does not have a release layer and Comparative Example 3 that does not perform a peeling acceleration treatment can obtain adhesiveness but have insufficient peelability and do not have an adhesive layer. In contrast to the adhesiveness of No. 2, in the examples, it was found that both the adhesiveness and the peelability can be achieved by using the temporary bonding layer of the present invention and the peel promoting treatment.
In Comparative Examples 4 to 7, although the peelability is somewhat improved, a defect occurs in the member to be processed.
Moreover, in all the examples except Example 11, when the exposure process shown below was performed, the adhesiveness between the adhesive layer and the release layer was not expressed at all.

[exposure]
The adhesive layer of the wafer 1 was exposed to light having a wavelength of 254 nm with an exposure amount of 500 mJ / cm ² using a UV exposure apparatus (LC8 manufactured by Hamamatsu Photonics).

  Therefore, such an adhesive layer is used as an adhesive layer of an adhesive support, and pattern exposure is performed on the adhesive layer (that is, by providing an exposed portion and an unexposed portion), thereby increasing the adhesive layer. Since the adhesive region and the low adhesive region can be provided, as described above, the member to be processed is suppressed while affecting the processing accuracy when the member to be processed is subjected to mechanical or chemical treatment. Can be reliably and easily temporarily supported, and the temporary support for the processed member can be released without damaging the processed member.

11, 11 ', 21, 31 Adhesive layer 12 Carrier substrate 31a Adhesive layer outer surface 31b Adhesive layer inner surface 21A, 31A Low adhesive region 21B, 31B High adhesive region 40 Mask 41 Light transmitting region 42 Light shielding Area 50 Actinic ray or radiation 50 'Actinic ray or radiation or heat 60 Device wafer 60' Thin device wafer 61, Silicon substrate 61a Silicon substrate surface 61b Silicon substrate back surface 61b 'Thin device wafer back surface 62 Device chip 63 Bump 70 Tape 71 Peeling layer 80 Temporary joining layer 100,100 ', 110,120 Adhesive support body

Claims (6)

A method for manufacturing a semiconductor device, comprising the following steps (a), (b) and (c).
(A) The first surface of the member to be processed and the substrate, (A) the temporary bonding layer for manufacturing a semiconductor device having the release layer and (B) the adhesive layer, and the first surface of the member to be processed are the above-mentioned (A) a step of adhering the release layer so that the substrate is in contact with the adhesive layer (B) ;
(A) A step of applying a mechanical or chemical treatment to a second surface different from the first surface of the member to be treated to obtain a treated member, and (c) the temporary bonding layer. a release solvent into contact, said method comprising the steps of desorbing the processed member from the temporary bonding layer, when contacting the release solvent and the temporary bonding layer, the frequency of the to release solvent is 35~950kHz super application of sound waves, the release solvent of the injection in the injection rate for the temporary bonding layer 5 ml / min to 100 ml / min, heating at a temperature of lower of 40 ° C. ~ boiling point or 200 ° C. of the release solvent of the release solvent , either stirring rate of the release solvent is stirred at 30Rpm～900rpm, or steps for performing a peeling enhancing treatment by a combination thereof. In the step (c), an ultrasonic wave having a frequency of 35 to 950 kHz is applied to the release solvent, an injection speed of the release solvent to the temporary bonding layer is 5 ml / min to 100 ml / min, It is a step of performing peeling promotion treatment by a combination of two or more of heating at 40 ° C. to the boiling point of the peeling solvent or the lower temperature of 200 ° C., and stirring at a peeling speed of 30 to 900 rpm. A method for manufacturing a semiconductor device according to claim 1. 3. The stripping solvent according to claim 1 or 2, wherein the stripping solvent is selected from alcohols, ketones, ethers, esters, aliphatic and aromatic hydrocarbons, halogenated hydrocarbons, amides and cellosolves. A method for manufacturing a semiconductor device. The method for manufacturing a semiconductor device according to claim 1, wherein the adhesive layer contains a binder, a polymerizable monomer, and at least one of a photopolymerization initiator and a thermal polymerization initiator. Before the step of bonding the first surface of the member to be processed and the substrate through the temporary bonding layer, actinic rays, radiation, or heat is applied to the adhesive layer (B) of the temporary bonding layer. The method for manufacturing a semiconductor device according to claim 1, further comprising an irradiating step. After the step of adhering the first surface of the member to be processed and the substrate through the temporary bonding layer, and mechanically or chemically treating the second surface of the member to be processed. subjected, before the step of obtaining a processed member, the manufacturing method of the temporary bonding layer further step of heating at a temperature of 50 ° C. to 300 ° C. with semiconductor device according to any one of claims 1 to 5 .