JP6018386B2 - Electron beam irradiation apparatus, multi-electron beam irradiation apparatus, electron beam exposure apparatus, and electron beam irradiation method - Google Patents

Description

  The present invention relates to an electron beam irradiation apparatus, a multi-electron beam irradiation apparatus, an electron beam exposure apparatus, and an electron beam irradiation method.

Conventionally, an electron beam exposure apparatus that generates a plurality of electron beams and irradiates a sample with the plurality of electron beams is obtained by forming an electron beam generated from an electron beam generation source into an area beam using a collimator lens or the like, and then masking the mask. A plurality of beams are generated through lenses, blanking arrays, and the like (see, for example, Patent Documents 1 and 2).
Patent Literature 1 JP 2007-329220 A Patent Literature 2 JP 9-245708 A Non Patent Literature 1 PNMinh, LTTTuyen, T. Ono, H. Mimura, K. Yokoo and M. Esashi: Carbon nanotube on a Si tip for electron field emitter, Jpn. J. Appl. Phys., 41 Part2, 12A (2002), L1409-L1411
Non-Patent Document 2 PNMinh, LTTTuyen, T. Ono, H. Miyashita, Y. Suzuki, H. Mimura and M. Esashi: Selective growth of carbon nanotubes on Si microfabricated tips and application for electron field emitters, J. Vac. Sci. Technol. B 21, 4, (2003), 1705-1709
Non-Patent Document 3 PNMinh, T. Ono, N. Sato, H. Mimura and M. Esashi: Microelectron field emitter array with focus lenses for multielectron beam lithography based on silicon on insulator wafer, J. Vac. Sci. Technol., B22 , 3 (2004) 1273-1276
Non-Patent Document 4 JHBae, PNMinh, T. Ono and M. Esashi: Schottky emitter using boron-doped diamond, J. Vac. Sci. Technol., B22, 3 (2004) 1349-1352
Non-Patent Document 5 C.-H. Tsai, T. Ono and M. Esashi: Fabrication of diamond Schottky emitter array by using electrophoresis pre-treatment and hot-filament chemical vapor deposition, diamond and related materials, 16 (2007) 1398- 1402

  However, such an electron beam exposure apparatus is large because the electron beam irradiation apparatus accommodates a complicated optical system, and the exposure apparatus itself is huge. In addition, since the electron beam irradiation apparatus is larger than the sample, it is difficult to mount a plurality of electron beam irradiation apparatuses and irradiate a plurality of drawing patterns in parallel with one sample.

  In a first aspect of the present invention, an electron beam irradiation apparatus that outputs a plurality of electron beams, has a plurality of electron emission portions, and accelerates electrons emitted from each of the plurality of electron emission portions. An electron comprising: a surface electron beam source that is focused and output as a plurality of electron beams; and an electron lens that irradiates an object with a drawing pattern by the plurality of electron beams output from the surface electron beam source at a predetermined magnification. A beam irradiation apparatus is provided.

  It should be noted that the above summary of the invention does not enumerate all the necessary features of the present invention. In addition, a sub-combination of these feature groups can also be an invention.

A configuration example of an electron beam exposure apparatus 1000 according to the present embodiment is shown together with a semiconductor wafer 10. A configuration example of an electron beam irradiation apparatus 100 according to the present embodiment is shown together with a semiconductor wafer 10. The structural example of the electron beam generation source 212 formed in the surface electron beam source 200 which concerns on this embodiment is shown. A modification of the electron beam exposure apparatus 1000 according to this embodiment is shown together with the semiconductor wafer 10.

  Hereinafter, the present invention will be described through embodiments of the invention, but the following embodiments do not limit the invention according to the claims. In addition, not all the combinations of features described in the embodiments are essential for the solving means of the invention.

  FIG. 1 shows a configuration example of an electron beam exposure apparatus 1000 according to this embodiment together with a semiconductor wafer 10. The electron beam exposure apparatus 1000 includes an electron beam irradiation apparatus 100 that irradiates a plurality of electron beams, and draws a fine pattern on the semiconductor wafer 10 using the electron beam irradiation apparatus 100.

  Here, the semiconductor wafer 10 may be a plate-like substrate formed by processing a crystal of a semiconductor material such as silicon, silicon carbide, germanium, gallium arsenide, gallium nitride, gallium phosphide, or indium phosphide. The electron beam exposure apparatus 1000 includes an electron beam irradiation apparatus 100, a stage unit 110, a storage unit 120, a control unit 130, a communication unit 140, and a computer unit 150.

  The electron beam irradiation apparatus 100 is an electron column that irradiates a plurality of electron beams. The electron beam irradiation apparatus 100 draws a predetermined drawing pattern by irradiating the surface of the semiconductor wafer 10 with a plurality of electron beams. Details of the electron beam irradiation apparatus 100 will be described later.

  The stage unit 110 places an object to be irradiated with an electron beam. In the figure, an example in which the object is a semiconductor wafer 10 is shown. The stage unit 110 moves the mounted semiconductor wafer 10 in the horizontal direction, and causes the electron beam irradiation apparatus 100 to draw a predetermined fine pattern on one surface of the semiconductor wafer 10 at a predetermined position.

  The stage unit 110 may have an XY stage. The stage unit 110 may have a θ stage. The stage unit 110 may further include a tilt stage that adjusts the horizontal position. The stage unit 110 may further include a Z stage that moves the semiconductor wafer 10 in the vertical direction and adjusts the distance between the semiconductor wafer 10 and the electron beam irradiation apparatus 100.

  The storage unit 120 stores drawing pattern information drawn by the electron beam irradiation apparatus 100. Here, the drawing pattern information may be position information on one surface of the semiconductor wafer 10, information on whether or not to irradiate an electron beam, and the like. The storage unit 120 may store predetermined drawing pattern information in advance.

  The control unit 130 is connected to the electron beam irradiation apparatus 100 and the storage unit 120, and transmits a control signal for causing the electron beam irradiation apparatus 100 to output a plurality of electron beams according to the drawing pattern information stored in the storage unit 120. To do. The control unit 130 may be connected to the stage unit 110 and may transmit a control signal for moving the stage unit 110 according to the drawing pattern information stored in the storage unit 120. In addition, the control unit 130 may transmit a control signal to the electron beam irradiation apparatus 100 and / or the stage unit 110 according to the instruction signal received via the communication unit 140.

  The communication unit 140 connects the control unit 130 and the computer unit 150. The communication unit 140 may have a general-purpose or dedicated interface, and the control unit 130 and the computer unit 150 may be connected to communicate with each other. The communication unit 140 may use a general-purpose high-speed serial interface or parallel interface such as Ethernet (registered trademark), USB, or Serial RapidIO. The communication unit 140 may connect the control unit 130 and the computer unit 150 wirelessly.

  The computer unit 150 transmits an instruction signal for operating the electron beam irradiation apparatus 100 and / or the stage unit 110 to the control unit 130. The computer unit 150 may execute an operation program for operating the electron beam exposure apparatus 1000 and transmit an instruction signal according to the operation program. The computer unit 150 may have an input device for inputting a user instruction, and may transmit an instruction signal according to the user instruction. The computer unit 150 may be a personal computer or a server machine.

  FIG. 2 shows a configuration example of the electron beam irradiation apparatus 100 according to this embodiment together with the semiconductor wafer 10. FIG. 2 shows a configuration example of a vertical cross section of the electron beam irradiation apparatus 100. The electron beam irradiation apparatus 100 includes a surface electron beam source 200, an acceleration electrode 230, and an electron lens 240.

  The surface electron beam source 200 generates a plurality of electron beams according to the control signal. The surface electron beam source 200 includes a substrate 210 and an electronic circuit unit 220.

  The substrate 210 is provided with a plurality of holes. The plurality of holes may be formed in a matrix on one surface of the substrate 210. In the substrate 210, a plurality of electron beam generation sources 212 are formed in the hole. Details of the electron beam generation source 212 will be described later. The substrate 210 may be a semiconductor crystal such as silicon.

  The electronic circuit unit 220 is formed on the other surface of the substrate 210 and outputs an electron beam from the plurality of electron beam generation sources 212. In the electronic circuit unit 220, a circuit for supplying a driving voltage for driving each of the plurality of electron beam generation sources 212 is formed. The electronic circuit unit 220 receives a control signal from the control unit 130 and outputs an electron beam from the plurality of electron beam generation sources 212 according to the drawing pattern information.

  One surface of the electronic circuit unit 220 is bonded to the substrate 210. The electronic circuit unit 220 may be formed of a semiconductor substrate such as silicon. The electronic circuit unit 220 is substantially the same as the thermal expansion coefficient of the substrate 210 to such an extent that the substrate 210 or the electronic circuit unit 220 does not bend or peel even when the surface electron beam source 200 is driven and the temperature rises. It may be formed of a material having a similar coefficient of thermal expansion.

  The acceleration electrode 230 is provided on the side of the surface electron beam source 200 that outputs the electron beam, and a voltage higher than that of the electrode that outputs the electron beam of the surface electron beam source 200 is applied to accelerate the electron beam. The acceleration electrode 230 is formed with a plurality of through holes respectively corresponding to the plurality of electron beam generation sources 212, and allows the plurality of electron beams to pass therethrough. The acceleration electrode 230 may have a plurality of through holes arranged in a matrix. A constant voltage is applied to the acceleration electrode 230, and as an example, approximately 0V is applied.

  The electron lens 240 irradiates the semiconductor wafer 10 as the object with a drawing pattern by a plurality of electron beams output from the surface electron beam source 200 at a predetermined magnification. For example, the electron lens 240 reduces the drawing pattern drawn by a plurality of electron beams to 1/100 or less. The electron lens 240 has a coil part 242, a lens part 244, and a speed reducing part 246.

  The coil unit 242 controls the deflection of the plurality of electron beams in the XY directions. That is, the coil unit 242 controls the beam shape of the electron beam on the surface of the semiconductor wafer 10 where the electron beam is irradiated. The coil unit 242 may be a rotation coil that corrects the correspondence between the X axis or Y axis of the electron beam irradiation apparatus 100 and the X axis or Y axis on the surface of the semiconductor wafer 10. The coil unit 242 may correct the amplitudes of the beam diameter on the surface of the semiconductor wafer 10 in the X and Y directions.

  The lens unit 244 images a plurality of electron beams on the surface of the semiconductor wafer 10. The lens unit 244 may constitute a telecentric lens system and functions as an objective lens of the surface electron beam source 200.

  The deceleration unit 246 receives a deceleration voltage and applies a deceleration electric field corresponding to the deceleration voltage to the plurality of electron beams. The decelerating unit 246 decelerates a plurality of electron beams and irradiates the semiconductor wafer 10 as an object with an electron beam having a predetermined energy. The deceleration unit 246 sets the incident voltage to the semiconductor wafer 10 as a difference between the acceleration voltage of the acceleration electrode 230 and the deceleration voltage.

  FIG. 3 shows a configuration example of the electron beam generation source 212 formed in the surface electron beam source 200 according to the present embodiment. The surface electron beam source 200 has a plurality of electron emission portions, accelerates and focuses the electrons emitted from each of the plurality of electron emission portions, and outputs the electrons as a plurality of electron beams. As described with reference to FIG. 2, the surface electron beam source 200 includes the substrate 210 and the electronic circuit unit 220. The surface electron beam source 200 may include a voltage supply unit 202 that supplies a driving voltage to each unit.

  The voltage supply unit 202 includes a plurality of electrode units 204 and supplies drive voltages to connection destinations connected to the respective electrode units 204. The plurality of electrode portions 204 may be connected to a plurality of connection destinations by wire bonding or the like. The voltage supply unit 202 is provided on the surface of the electronic circuit unit 220 opposite to the substrate 210 side.

  Here, the electrode portion described in the present embodiment may include nickel, gold, chromium, titanium, aluminum, tungsten, palladium, rhodium, platinum, copper, ruthenium, indium, iridium, osmium, and / or molybdenum. Further, the electrode portion may be an alloy of two or more materials including these materials.

  The substrate 210 has a plurality of holes 214, an isolation part 340, and a third electrode part 350. Each bottom surface of the plurality of hole portions 214 is formed in a concave shape. Moreover, each bottom surface of the plurality of hole portions 214 may be formed in a spherical shape or a parabolic shape. Each of the plurality of holes 214 is formed in a cylindrical shape, and an electron beam generation source 212 that generates an electron beam is formed. The electron beam generation source 212 includes a polysilicon layer 216, a first insulating film 218, an electron emission unit 300, a first electrode unit 310, a second electrode unit 320, and a second insulating film 330.

  The polysilicon layer 216 is formed on the surface of the substrate 210 where the plurality of holes 214 are formed. A part of the polysilicon layer 216 formed at the bottom of the hole 214 is nano-crystallized by anodic activation to form the electron emission unit 300. The first insulating film 218 is formed on the surface of the substrate 210 where the polysilicon layer 216 is formed. The first insulating film 218 may be a SiN film formed by a CVD method or the like.

  The electron emission unit 300 is provided on the bottom surface of each of the plurality of holes 214 and emits electrons. The plurality of electron emission units 300 are arranged in a matrix and emit electrons according to the driving voltage. Moreover, the electron emission part 300 has a nanocrystal. For example, the electron emission unit 300 is formed of nanocrystalline silicon. Nanocrystalline silicon forms a surface oxide film that functions as an electron tunneling barrier, and a plurality of nanocrystalline silicons are arranged to form a column connecting the electron tunneling barriers.

  In such an array of electron tunnel barriers, a voltage is applied to the barriers, whereby electrons passing through the barriers can be controlled in a minute unit such as several units. Therefore, the electron emission part 300 can control the amount of electron emission precisely and with good reproducibility by having a nanocrystal.

  Further, when the electron emission unit 300 is formed of nanowires in which a plurality of such nanocrystalline silicons are arranged, the nanowires are not formed perpendicular to the surface that outputs electrons, and the output surface depends on the crystal orientation. May be tilted with respect to the normal. In this case, the electron emission unit 300 may output electrons in a direction different from the normal direction of the output surface. In this case, the electron emission unit 300 determines the electron emission amount by multiplying the distribution of the tunnel probability in a different direction with respect to the normal of the output surface and the distribution in which the nanowire emits electrons in the direction.

  The electron emission unit 300 can output more electrons as an electron beam than the electron emission amount when the bottom surface of the hole 214 has a concave shape, compared to the case where the bottom surface is flattened. For example, in the case where the bottom surface of the electron emission unit 300 is made flat by forming the direction in which the electron emission distribution is higher and / or the direction in which the tunnel probability distribution is higher in the direction in which the electron beam is output. More electrons can be output as an electron beam than the amount of emitted electrons. As an example, the shape of the bottom surface of the hole 214 is such that the direction in which the electrons are emitted from the plurality of electron emitting units 300 and the tunnel probability of the electrons in the directions are more multiplied is the center of the first electrode unit 310. Turn to.

  The electron emission unit 300 may include an insulating film that tunnels emitted electrons instead of the nanocrystal. Since such an insulating film can be adjusted by the probability of tunneling the amount of electrons emitted, the amount of electrons emitted can be controlled by the material, film thickness, and voltage applied to the insulating film. it can.

  The first electrode unit 310 is provided corresponding to each of the plurality of electron emission units 300, accelerates electrons emitted from the corresponding electron emission unit 300, and emits an electron beam from the hole 214 provided with the electron emission unit 300. Output as. Each of the plurality of first electrode portions 310 has an opening 312, is formed in a plate shape on one surface of the substrate 210 where the plurality of holes 214 are provided, and the openings are opened by a potential difference with the corresponding hole 214. The electron beam is focused from 312 and output. The opening 312 is formed near the center of the first electrode unit 310 and / or the electron emission unit 300. The opening 312 may be a circular through hole.

  In the drawing, the first electrode part 310a is provided corresponding to the electron emission part 300a, and shows an example in which electrons emitted from the electron emission part 300a are accelerated and output as an electron beam from the opening 312a. Similarly, the 1st electrode part 310b is provided corresponding to the electron emission part 300b, and accelerates the electron which the electron emission part 300b discharge | releases.

  The first electrode unit 310 may include a connection unit that is electrically connected to an electrode or the like provided outside the substrate 210 and to which a driving voltage is applied. The connection part may be an electrode part in which a conductive material is further formed on a part of the first electrode part by plating or the like. The connecting portion may be connected to an external electrode by wire bonding or the like.

  The second electrode portion 320 is provided in each of the plurality of hole portions 214 and is formed of a conductive material that covers the bottom surface and side walls of the hole portion 214. The second electrode unit 320 causes the electrons emitted from the electron emission unit 300 to be output as an electron beam from the opening 312 due to a potential difference from the first electrode unit 310. Here, the second electrode part 320 is formed thin enough to allow the electrons emitted from the electron emission part 300 to pass through the hole 214.

  Here, the first electrode part 310 and the second electrode part 320 may be applied with a driving voltage at which the potential difference between these electrodes is several tens to several hundreds volts. Preferably, the first electrode unit 310 and the second electrode unit 320 are each applied with a driving voltage having a potential difference of several hundreds of volts. As an example, the first electrode part 310 and the second electrode part 320 are each applied with a driving voltage with a potential difference of 150V. The second electrode part 320 includes a connection part 322.

  The connection part 322 is an electrode part formed to be thicker in the second electrode part 320, and is electrically connected to an electrode or the like provided outside the substrate 210 and applied with a driving voltage. The connection part 322 may be an electrode part in which a conductive material is further formed on a part of the second electrode part by plating or the like. The connection portion 322 may be connected to an external electrode by wire bonding or the like.

  The second insulating film 330 is formed between the substrate 210 and the first electrode unit 310 and electrically insulates the first electrode unit 310 and the second electrode unit 320 while supporting the first electrode unit 310. . The second insulating film 330 may be a silicon oxide film formed by a CVD method or the like.

  The electron beam generation source 212 described above applies electrons from the opening 312 by applying an electric field generated by a driving voltage applied to each of the first electrode unit 310 and the second electrode unit 320 to electrons emitted from the electron emission unit 300. Generate a beam. Here, in the electron beam generation source 212, each bottom surface of the hole 214 is formed in a concave shape, a spherical shape, or a parabolic shape, so that the electron emission surface of the electron emission unit 300 is also concave. , Spherical or parabolic.

  As a result, the electron beam generation source 212 can easily focus the electron emitting unit 300 on the opening 312 by aligning the direction in which the electron emitting unit 300 emits electrons with the direction of the opening 312. That is, the electron beam generation source 212 can increase the number of electrons focused on the opening 312 and increase the density of the generated electron beam.

  The electron beam generation source 212 irradiates the semiconductor wafer 10 with the generated electron beam through the subsequent electron lens 240. Here, the electron lens 240 may have an aberration that causes blurring, distortion, or the like in the image formation of the electron beam, similar to an optical lens or the like. For example, the electron lens 240 may shorten the focal position of electrons traveling near the outside of the beam compared to electrons traveling near the center of the electron beam to be imaged.

  Therefore, the electron beam generation source 212 may correct the aberration while increasing the electron beam density by forming the electron emitting surface of the electron emitting unit 300 into a concave shape, a spherical shape, or a parabolic shape. . Here, when the electron beam generation source 212 flattens the bottom surface of the hole 214, the electrons output from the region where the normal direction of the electron emission surface of the electron emission unit 300 is in the vicinity of the opening 312 are It is easy to focus on the center.

  Therefore, the electron emission unit 300 is directed to a region near the edge side of the emission surface with a distance between the region near the center of the emission surface and the opening 312 while directing the electron emission surface toward the opening 312. A surface for shortening the distance from the opening 312 is formed. That is, by forming the emission surface so that electrons that are likely to be focused outside the electron beam reach the opening 312 more quickly, the focal length of the electrons is increased. This is equivalent to concentrating the laminar flow of electrons emitted from a portion closer to the center point of the emission surface of the electron emission unit 300 to a position closer to the center point to generate negative aberration.

  As a result, the electron beam generation source 212 can increase the focal length of electrons traveling near the outside of the electron beam as compared to electrons traveling near the center of the generated electron beam. For example, the electron beam generating source 212 increases the focal length of the electron beam as it moves away from the center of the optical axis of the electron beam, and concentrically distributes the focal length in a cross section perpendicular to the irradiation direction of the electron beam. To have. As described above, the electron beam generation source 212 can correct the aberration of the electron lens 240 by forming an emission surface corresponding to the aberration of the electron lens 240.

  Here, the region near the edge side of the emission surface of the electron emission unit 300 is closer to the outside of the electron beam generation source 212 than the region near the center, and thus is easily affected by an external electric field. That is, electrons output from the region near the edge side of the emission surface are likely to be output in a direction inclined from the normal line of the emission surface, and the focal length tends to be long. As described above, the electron beam generation source 212 forms a distribution of focal lengths in the electron beam to be output depending on the external electric field. Therefore, the shape of the emission surface of the electron emission unit 300 is adjusted according to such distribution. Then, the aberration of the electron beam imaged on the semiconductor wafer 10 may be corrected.

  Here, the second electrode part 320 forms a cylindrical electrode covering the bottom surface and the side wall of the hole part 214, and keeps the hole part 214 at the same potential. As a result, the influence of the external electric field can be reduced while the side wall portion of the second electrode unit 320 maintains the velocity of the electrons emitted from the electron emission unit 300 and focuses the electrons near the opening 312.

  The isolation part 340 is formed by being filled with an insulating material. The isolation unit 340 is formed so as to surround each of the plurality of electron beam generation sources 212 and electrically isolates the electron beam generation sources 212 from each other. As an example, the isolation part 340 is formed by filling a groove or the like formed in a lattice shape with a polymer or the like.

  The third electrode portion 350 is formed on the surface of the substrate 210 opposite to the surface on which the plurality of hole portions 214 are formed, corresponding to each of the plurality of electron emission portions 300. The third electrode unit 350 is applied with a driving voltage for emitting electrons from the plurality of electron emission units 300. The third electrode unit 350 is electrically connected to the electronic circuit unit 220.

  The electronic circuit unit 220 is formed on the other surface of the substrate 210 and individually supplies a driving voltage for emitting electrons from the plurality of electron emission units 300 to each of the plurality of electron emission units 300. The electronic circuit unit 220 may be formed on a semiconductor substrate, and one surface of the semiconductor substrate may be attached to the substrate 210.

  Here, the electronic circuit unit 220 includes a plurality of electrode units 222 corresponding to the third electrode unit 350 formed on the substrate 210, and the electrode unit 222 is electrically connected to the corresponding third electrode unit 350. A driving voltage is supplied to the substrate 210 through the electrode portion 222. For example, the electrode portions 222 are formed at the same pitch as the third electrode portions 350 so as to correspond to the third electrode portions 350 formed on the substrate 210 at a pitch of about 100 μm.

  The electronic circuit unit 220 may include a plurality of connection units 224 that are electrically connected to external electrodes and the like and to which a drive voltage, a power supply voltage, and the like are applied. The connection portion 224 may be connected to an external electrode by wire bonding or the like.

  The electronic circuit unit 220 may further apply a different offset bias depending on the arrangement of the plurality of electron emission units 300. The plurality of electron emission units 300 are individually applied with a driving voltage to emit electrons, and the corresponding plurality of electron beam generation sources 212 generate a plurality of electron beams. The plurality of electron beam generation sources 212 causes the generated plurality of electron beams to be imaged by the subsequent electron lens 240 to irradiate the semiconductor wafer 10 with a drawing pattern.

  Here, the optical system such as the electron lens 240 gives a slight difference in focal position between the electron beam passing near the center of the lens and the electron beam passing near the outer edge of the lens, and blurs the drawn image by a plurality of electron beams. May cause distortion and the like. For example, the electron lens 240 may shorten the focal position with respect to an electron beam passing near the outer edge of the lens as compared with an electron beam passing near the center of the lens.

  Therefore, the electronic circuit unit 220 has an electron beam generation source 212 that generates an electron beam that passes through the vicinity of the outer edge of the electron lens 240 as compared with an electron beam generation source 212 that generates an electron beam that passes through the vicinity of the center of the electron lens 240. Supply a high offset voltage. Accordingly, the electronic circuit unit 220 increases the output speed of the electron beam passing through the vicinity of the outer edge of the electronic lens 240 to increase the focal length, and cancels the focal position shortened by the electronic lens 240 for correction. Can do.

  Here, the plurality of electron emission units 300 may be distributed to a plurality of blocks according to their arrangement, and the electronic circuit unit 220 may apply an offset bias for each block. For example, among the plurality of electron emission units 300, the plurality of electron emission units 300 that are arranged in the vicinity of the center on one surface of the substrate 210 and emit an electron beam that passes through the vicinity of the center of the electron lens 240 are the same. Distributed to the blocks. Further, the other electron emission units 300 may be distributed to one or more blocks in a substantially concentric manner around the central block.

  As described above, the plurality of electron emission units 300 are divided into one or more concentric circles in the outer edge direction of the electron lens 240 with the electron emission unit 300 that outputs an electron beam passing near the center of the electron lens 240 as a central block. The electron emission unit 300 corresponding to the annular region is distributed as another block. The electronic circuit unit 220 adjusts the focal position of the electron beam for each of the regions divided concentrically around the electron beam passing near the center of the electron lens 240 by applying a different offset bias for each block. It is possible to correct the image formation of the drawing pattern efficiently.

  The electronic circuit unit 220 applies a negative voltage of several tens of kV to the first electrode unit and the second electrode unit. As an example, the electronic circuit unit 220 applies −20 kV to the second electrode unit corresponding to the electron emission unit 300 distributed in the center of the concentric circle, and −20 kV + 150 V to the corresponding first electrode unit.

  In this case, the electron beam generation source 212 generates an electron beam by applying an electric field generated by a potential difference of 150 V to electrons emitted from the electron emission unit 300, and the generated electron beam is generated with a potential difference of about 20 kV from the acceleration electrode 230. Accelerate. The electronic circuit unit 220 applies −20 kV + nV to the corresponding second electrode unit and −20 kV + 150 V + nV to the corresponding first electrode unit every time n blocks differ from the central block toward the outer edge. As described above, the electronic circuit unit 220 may finely adjust the acceleration electric field of the electron beam for each block by changing the driving voltage by about 1 V every time the block is different.

  The above-described surface electron beam source 200 according to the present embodiment has a plurality of electron beam generation sources 212 and can individually drive the plurality of electron beam generation sources 212 to output a plurality of electron beams. . Thereby, the electron beam irradiation apparatus 100 provided with the surface electron beam source 200 can irradiate the object with a predetermined drawing pattern by a plurality of electron beams.

  Here, the electron beam generation source 212 is formed in each of a plurality of holes 214 formed in the semiconductor substrate. Therefore, the plurality of electron beam generation sources 212 can be formed integrally with the substrate 210 by a semiconductor manufacturing process. That is, for example, the electron beam generation sources 212 are formed in an area of 1 cm × 1 cm of the substrate 210 and arranged in a matrix of 100 × 100. As described above, the electron beam generation source 212 is formed in a matrix shape with a pitch of about 100 μm, so that the object can be irradiated with a drawing pattern with a pitch of about 1 μm or less by the electron lens 240.

  As described above, the surface electron beam source 200 can include a plurality of electron beam generation sources 212 formed integrally with a plurality of electrode portions and formed with a small area and a high density. Therefore, the electron beam irradiation apparatus 100 can irradiate about 10,000 electron beams while reducing the size of the apparatus.

  In the above embodiment, the example in which the surface electron beam source 200 and the electron beam irradiation apparatus 100 are used in the electron beam exposure apparatus 1000 has been described. Instead, the surface electron beam source 200 and the electron beam irradiation apparatus 100 may be provided in an apparatus using an electron beam, and include an electron microscope, an electron beam microanalyzer, a cathode ray tube, a transmission tube, an imaging tube, a vacuum tube, a processing device, a heating device. You may use for an apparatus or a sterilizer.

  FIG. 4 shows a modification of the electron beam exposure apparatus 1000 according to this embodiment together with the semiconductor wafer 10. In the electron beam exposure apparatus 1000 of this modification, the same reference numerals are given to the same operations as those of the electron beam exposure apparatus 1000 according to the present embodiment shown in FIG. The electron beam exposure apparatus 1000 includes a plurality of electron beam irradiation apparatuses 100 that irradiate a plurality of electron beams. The electron beam exposure apparatus 1000 irradiates a plurality of electron beams and applies a drawing pattern corresponding to the drawing pattern information to the semiconductor wafer 10 that is an object. draw.

  Two or more electron beam irradiation apparatuses 100 are provided in the electron beam exposure apparatus 1000. In the drawing, an electron beam irradiation apparatus 100 shows an example in which a horizontal sectional area is formed smaller than the surface area of the semiconductor wafer 10 and a plurality of electron beam exposure apparatuses 1000 are provided. The plurality of electron beam irradiation apparatuses 100 draw a predetermined drawing pattern by irradiating the surface of the semiconductor wafer 10 with a plurality of electron beams, respectively. The plurality of electron beam irradiation apparatuses 100 may execute each drawing in parallel. Details of the electron beam irradiation apparatus 100 have already been described with reference to FIG.

  The stage unit 110 moves the mounted semiconductor wafer 10 in the horizontal direction, and causes a plurality of electron beam irradiation apparatuses 100 to draw a predetermined fine pattern on one surface of the semiconductor wafer 10 at a predetermined position. The storage unit 120 stores drawing pattern information drawn by the plurality of electron beam irradiation apparatuses 100. The control unit 130 is connected to each of the plurality of electron beam irradiation apparatuses 100, and receives a control signal for causing each of the plurality of electron beam irradiation apparatuses to output a plurality of electron beams according to the drawing pattern information stored in the storage unit 120. Send.

  In this way, by using the surface electron beam source 200 in which the plurality of electron beam generation sources 212 are formed integrally with the substrate 210, the electron beam irradiation apparatus 100 can be reduced in size, and the electron beam exposure apparatus 1000 is used. A plurality of electron beam irradiation apparatuses 100 can be mounted. An electron beam exposure apparatus 1000 including two or more electron beam irradiation apparatuses 100 can irradiate the semiconductor wafer 10 with two or more drawing patterns in parallel, and has a throughput according to the number of electron beam irradiation apparatuses 100 to be mounted. Can be improved.

  As mentioned above, although this invention was demonstrated using embodiment, the technical scope of this invention is not limited to the range as described in the said embodiment. It will be apparent to those skilled in the art that various modifications or improvements can be added to the above-described embodiment. It is apparent from the scope of the claims that the embodiments added with such changes or improvements can be included in the technical scope of the present invention.

  The order of execution of each process such as operations, procedures, steps, and stages in the apparatus, system, program, and method shown in the claims, the description, and the drawings is particularly “before” or “prior to”. It should be noted that the output can be realized in any order unless the output of the previous process is used in the subsequent process. Regarding the operation flow in the claims, the description, and the drawings, even if it is described using “first”, “next”, etc. for convenience, it means that it is essential to carry out in this order. It is not a thing.

DESCRIPTION OF SYMBOLS 10 Semiconductor wafer, 100 Electron beam irradiation apparatus, 110 Stage part, 120 Storage part, 130 Control part, 140 Communication part, 150 Computer part, 200-plane electron beam source, 202 Voltage supply part, 204 Electrode part, 210 Substrate, 212 Electron Beam generation source, 214 hole portion, 216 polysilicon layer, 218 first insulating film, 220 electronic circuit portion, 222 electrode portion, 224 connection portion, 230 acceleration electrode, 240 electron lens, 242 coil portion, 244 lens portion, 246 deceleration Part, 300 electron emission part, 310 first electrode part, 312 opening part, 320 second electrode part, 322 connection part, 330 second insulating film, 340 isolation part, 350 third electrode part, 1000 electron beam exposure apparatus

Claims (16)

An electron beam irradiation apparatus that outputs a plurality of electron beams,
A surface electron beam source having a substrate provided with a plurality of electron emission portions, accelerating and focusing electrons emitted from each of the plurality of electron emission portions, and outputting the electrons as a plurality of electron beams;
An electron lens that irradiates an object with a drawing pattern by the plurality of electron beams output from the surface electron beam source at a predetermined magnification;
Equipped with a,
Each of the plurality of electron emission portions is provided on a bottom surface of each of a plurality of holes provided in the substrate,
The shape of the bottom surface is such that the surface electron beam source accelerates electrons in such a direction that the multiplication of the distribution of the electrons emitted by the plurality of electron emitting portions according to the direction and the tunnel probability of the electrons in the direction becomes larger. electron beam irradiation device that directed to focus and.   2. The electron beam irradiation apparatus according to claim 1, wherein the plurality of electron emission portions are arranged in a matrix and emit electrons according to a driving voltage.   The electron beam irradiation apparatus according to claim 1, wherein each of the plurality of electron emission portions includes a nanocrystal.   The electron beam irradiation apparatus according to claim 1, wherein each of the plurality of electron emission portions includes an insulating film that tunnels emitted electrons.   5. The electronic circuit unit according to claim 1, further comprising an electronic circuit unit that is connected to the surface electron beam source and individually supplies a driving voltage for emitting electrons from the plurality of electron emission units to each of the plurality of electron emission units. The electron beam irradiation apparatus as described in any one of Claims.   The electron beam irradiation apparatus according to claim 5, wherein the electronic circuit unit applies an offset bias corresponding to each arrangement to each of the plurality of electron emission units in addition to the driving voltage. The plurality of electron emission portions are distributed to a plurality of blocks according to each arrangement,
The electron beam irradiation apparatus according to claim 6, wherein the electronic circuit unit applies an offset bias for each block. An electron beam irradiation apparatus that outputs a plurality of electron beams,
A surface electron beam source having a plurality of electron emission portions, accelerating and focusing electrons emitted from each of the plurality of electron emission portions, and outputting the electrons as a plurality of electron beams;
An electron lens that irradiates an object with a drawing pattern by the plurality of electron beams output from the surface electron beam source at a predetermined magnification;
An electronic circuit unit connected to the surface electron beam source and individually supplying a driving voltage for emitting electrons from the plurality of electron emission units to each of the plurality of electron emission units;
Equipped with a,
The plurality of electron emission portions are distributed to a plurality of blocks according to each arrangement,
The electronic circuit unit is an electron beam irradiation apparatus that applies an offset bias to each of the plurality of electron emission units for each block in addition to the driving voltage . The electron beam irradiation apparatus according to claim 7 or 8, wherein the plurality of electron emission portions are distributed into a central block disposed in the center and one or more concentric blocks centered on the central block. . The electronic circuit unit, an electron beam irradiation device according to any one of claims 5 to 9, which is formed on a semiconductor substrate. The electron lens is reduced to a predetermined scale a drawing pattern of said plurality of electron beams output from the surface electron beam source, in any one of claims 1 to 10, irradiating the object The electron beam irradiation apparatus as described. The surface electron beam source is provided on one surface of the surface electron beam source so as to correspond to each of the plurality of electron emission portions, and each of the electrons emitted from the corresponding electron emission portions is focused, electron beam irradiation device according to any one of claims 1 having a plurality of electrode portions to output as the electron beam 11. The electron beam irradiation apparatus according to claim 12 , wherein the surface electron beam source and the plurality of electrode portions are integrally formed. Multiple electron beam irradiation apparatus including plural electron beam irradiation device according to any one of claims 1 to 13. One or more electron beam irradiation apparatuses according to any one of claims 1 to 13 ,
A storage unit in which one or more of the electron beam irradiation device stores the drawing pattern data to be drawn,
A control unit that transmits a control signal for outputting one or more electron beams to one or more of the electron beam irradiation devices according to the drawing pattern information stored in the storage unit;
A stage unit for placing the object;
With
An electron beam exposure apparatus that irradiates the plurality of electron beams and draws a drawing pattern corresponding to the drawing pattern information on the object. A surface electron beam output stage for accelerating and focusing electrons emitted from each of a plurality of electron emission portions provided on the substrate and outputting the electrons as a plurality of electron beams;
An electron beam irradiation step of irradiating an object with a drawing pattern by the plurality of electron beams at a predetermined magnification;
Equipped with a,
Each of the plurality of electron emission portions is provided on a bottom surface of each of a plurality of holes provided in the substrate,
The shape of the bottom surface indicates a direction in which a multiplication of a distribution in which the plurality of electron emitting portions emit electrons according to a direction and a tunnel probability of electrons in the direction becomes larger in the surface electron beam output stage. electron beam irradiation method that a direction to focus accelerate to.

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