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JP6047433B2 - Deposition source crucible - Google Patents
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JP6047433B2 - Deposition source crucible - Google Patents

Deposition source crucible Download PDF

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JP6047433B2
JP6047433B2 JP2013053125A JP2013053125A JP6047433B2 JP 6047433 B2 JP6047433 B2 JP 6047433B2 JP 2013053125 A JP2013053125 A JP 2013053125A JP 2013053125 A JP2013053125 A JP 2013053125A JP 6047433 B2 JP6047433 B2 JP 6047433B2
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crucible
vapor deposition
deposition material
wall surface
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JP2014177681A (en
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圭司 福田
圭司 福田
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Choshu Industry Co Ltd
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Description

本発明は、蒸着材料を加熱して溶融、蒸発させその蒸発分子を基板表面に堆積させて薄膜を成長させるために使用される蒸着源坩堝に関する。   The present invention relates to a vapor deposition source crucible used to heat a vapor deposition material to melt and evaporate it and deposit the evaporated molecules on a substrate surface to grow a thin film.

図6は、従来の真空チャンバ内で基板表面に薄膜を形成するための薄膜形成装置に使用される分子線源セルを示す断面図である。この分子線源セルは、熱的及び化学的に安定性の高い材質から成る有底円筒状の坩堝3の中に蒸着材料aを収容しておき、この蒸着材料aを坩堝3の外側に配置された電気ヒーター5で加熱し、これにより蒸着材料を溶融、蒸発させ、発生した蒸発分子を放出口4から放出し、基板上に堆積させるものである(特許文献1参照)。なお前記坩堝3をその外側周囲から加熱する前記ヒーター5の加熱温度は、前記坩堝3の底部中央部などの一つ又は複数の位置の温度を測定する熱電対7からの出力に基づいて制御されている。   FIG. 6 is a cross-sectional view showing a molecular beam source cell used in a thin film forming apparatus for forming a thin film on a substrate surface in a conventional vacuum chamber. In this molecular beam source cell, a deposition material a is accommodated in a bottomed cylindrical crucible 3 made of a thermally and chemically highly stable material, and the deposition material a is disposed outside the crucible 3. The heated electric heater 5 is used to melt and evaporate the vapor deposition material, and the generated evaporated molecules are discharged from the discharge port 4 and deposited on the substrate (see Patent Document 1). The heating temperature of the heater 5 that heats the crucible 3 from its outer periphery is controlled based on the output from the thermocouple 7 that measures the temperature at one or a plurality of positions such as the center of the bottom of the crucible 3. ing.

特開2005−82833号公報JP 2005-82833 A

ところで、上記の図6に示すような従来の分子線源セルの坩堝3においては、前記坩堝3の外側に設置したヒーター5により坩堝3の内部を加熱するようにしているため、図6の二点鎖線で示す温度分布のように、前記ヒーター5に近い坩堝3内の周辺部分の蒸着材料は比較的短時間内に十分に昇温するのに対して前記ヒーター5から離れた坩堝3内の中央部分の蒸着材料はなかなか昇温しないなど、特に坩堝3内の周辺側と中心側との間で昇温ムラが生じてしまっていた。   By the way, in the crucible 3 of the conventional molecular beam source cell as shown in FIG. 6 described above, the inside of the crucible 3 is heated by the heater 5 installed outside the crucible 3. As in the temperature distribution indicated by the dotted line, the vapor deposition material in the peripheral portion in the crucible 3 close to the heater 5 sufficiently increases the temperature within a relatively short time, whereas in the crucible 3 away from the heater 5 The temperature of the vapor deposition material in the central portion does not readily rise, and uneven temperature rise has occurred particularly between the peripheral side and the central side in the crucible 3.

そのため、特に有機物などの熱伝導率が低い非金属材料を蒸着させる場合などにおいて、また近年の大型の坩堝を使用する場合などにおいては、坩堝内の蒸着材料全体の温度が均等になるまでに長時間の待機時間が必要となり、その待機時間が律速となって薄膜形成装置の稼働率が低下してしまうという問題があった。また、上記の長い待機時間中に蒸着材料の一部が蒸発してしまい、蒸着材料の利用効率が低下してしまうという問題もあった。さらにまた、前述のような昇温ムラが生じた坩堝3内の高温部分の蒸着材料の中には材料劣化が原因と見られる蒸発速度の低下などが発生する場合があり基板上に形成された薄膜の品質低下という問題も生じていた。   Therefore, especially when depositing non-metallic materials with low thermal conductivity, such as organic substances, and when using large crucibles in recent years, it takes a long time until the temperature of the entire deposition material in the crucible becomes uniform. There is a problem that the waiting time of the time is required, the waiting time is rate-determining, and the operating rate of the thin film forming apparatus is lowered. There is also a problem that a part of the vapor deposition material evaporates during the long waiting time described above, and the utilization efficiency of the vapor deposition material is reduced. Furthermore, in the vapor deposition material in the high temperature portion in the crucible 3 where the above-described temperature rise unevenness has occurred, the evaporation rate may be reduced due to material deterioration, and the like. There has also been a problem of deterioration of the quality of the thin film.

本発明はこのような従来技術の問題点に着目してなされたものであって、ヒーターによる加熱時に坩堝内の蒸着材料に昇温ムラが生じることがないようにして、坩堝内の蒸着材料全体が均等に昇温するまでの待機時間を短縮化し、以って薄膜形成装置の稼働率を向上させ、蒸着材料の利用効率を向上させ、さらには基板上に形成される薄膜の品質低下を防止することができる蒸着源坩堝を提供することを目的とする。   The present invention has been made paying attention to such problems of the prior art, and prevents the deposition material in the crucible from being unevenly heated so that the deposition material in the crucible does not become uneven when heated by the heater. Shortens the waiting time until the temperature rises evenly, thereby improving the operating rate of the thin film forming equipment, improving the utilization efficiency of the vapor deposition material, and preventing the deterioration of the quality of the thin film formed on the substrate An object of the present invention is to provide a vapor deposition source crucible that can be used.

このような課題を解決するための本発明による蒸着源坩堝は、外側に配置されたヒーターからの熱により内部の蒸着材料を加熱するための蒸着源坩堝であって、前記坩堝の内壁面の互いに対向する部分をそれぞれ繋ぐ複数の直線状の金属製の棒又は細線が平面視で互いに交差し且つ側面視でも互いに交差するように配置されていることを特徴とするものである。   A vapor deposition source crucible according to the present invention for solving such a problem is a vapor deposition source crucible for heating an internal vapor deposition material by heat from a heater disposed outside, and the inner wall surfaces of the crucibles are mutually connected. A plurality of linear metal rods or thin lines that connect the opposing portions are arranged so as to intersect with each other in a plan view and also intersect with each other in a side view.

また、本発明による蒸着源坩堝においては、前記坩堝の内壁面の互いに対向する部分をそれぞれ繋ぐ複数の金属製の棒、細線又は帯状体が、平面視で互いに交差するように、且つ上下方向の高さが互いに異なるように、配置されているものであってもよい。   Further, in the vapor deposition source crucible according to the present invention, a plurality of metal rods, thin wires, or strips connecting the mutually facing portions of the inner wall surface of the crucible cross each other in a plan view, and in the vertical direction. You may arrange | position so that height may mutually differ.

また、本発明による蒸着源坩堝においては、前記一つ又は複数の金属製の棒、細線又は帯状体は、坩堝内の上下方向における略中央部分から底部までの領域内においてのみ配置されるものであってもよい。   Further, in the vapor deposition source crucible according to the present invention, the one or more metal rods, thin wires or strips are arranged only in a region from a substantially central portion to a bottom portion in the vertical direction in the crucible. There may be.

また、本発明による蒸着源坩堝においては、前記一つ又は複数の金属製の棒、細線又は帯状体は、前記坩堝の内壁面に対して固定的に又は着脱自在に配置されている。   In the vapor deposition source crucible according to the present invention, the one or more metal bars, thin wires, or strips are fixedly or detachably disposed with respect to the inner wall surface of the crucible.

本発明においては、一つ又は複数の金属(合金を含む)製の棒、細線又は帯状体を、坩堝の内壁面と坩堝内の水平方向における略中央部分とを繋ぐように配置するようにしたので、坩堝の外側からのヒーターの熱が、坩堝の内壁面に接触又は接合されている、熱伝導率の高い金属製の棒、細線又は帯状体により、坩堝内の内壁面側の蒸着材料だけでなく略中央部分側の蒸着材料にも効率的に伝えられ、坩堝内の蒸着材料の全体がムラなく均一に昇温されるようになるので、坩堝内の蒸着材料全体の温度が均等に昇温されるまでの待機時間が従来よりも大幅に削減される。よって、本発明によれば、坩堝内の蒸着材料全体の温度が均等に昇温されるまでの待機時間が大幅に短縮される結果、薄膜形成装置の稼働率を大幅に向上させることが可能になり、従来の長い待機時間中に蒸着材料が蒸発してしまうことを無くして蒸着材料の利用効率を向上させることができるようになり、さらに従来の長い待機時間中に坩堝内の高温に加熱された部分の蒸着材料に劣化が生じて基板上に形成される薄膜の品質低下が生じてしまうことも有効に防止できるようになる。   In the present invention, one or a plurality of metal (including alloy) rods, thin wires, or strips are arranged so as to connect the inner wall surface of the crucible and the substantially central portion in the horizontal direction in the crucible. Therefore, the heat of the heater from the outside of the crucible is in contact with or joined to the inner wall surface of the crucible, and only the vapor deposition material on the inner wall surface side in the crucible is made of a metal rod, thin wire or strip with high thermal conductivity. In addition, it is efficiently transmitted to the vapor deposition material on the substantially central portion side, and the entire vapor deposition material in the crucible is heated uniformly and uniformly, so that the temperature of the entire vapor deposition material in the crucible rises evenly. The waiting time until it is warmed is greatly reduced than before. Therefore, according to the present invention, the waiting time until the temperature of the entire vapor deposition material in the crucible is uniformly raised is greatly reduced, and as a result, the operating rate of the thin film forming apparatus can be greatly improved. Therefore, it is possible to improve the utilization efficiency of the vapor deposition material without evaporating the vapor deposition material during the conventional long standby time, and further, it is heated to the high temperature in the crucible during the conventional long standby time. It is also possible to effectively prevent the deterioration of the vapor deposition material in the portion and the deterioration of the quality of the thin film formed on the substrate.

また、本発明において、複数の金属製の棒、細線又は帯状体を、坩堝の内壁面の互いに対向する部分をそれぞれ繋ぐように、平面視で互いに交差するように、且つ上下方向の高さが互いに異なるように配置するようにしたときは、坩堝内に複数の金属製の棒、細線又は帯状体を言わば略格子状又は略網の目状に張り巡らさせることができるので、ヒーターからの熱により坩堝内の蒸着材料全体を確実に昇温ムラなく均等に昇温させることが可能になる。   Further, in the present invention, a plurality of metal bars, thin wires, or strips are crossed with each other in plan view so as to connect the mutually facing portions of the inner wall surface of the crucible, and the height in the vertical direction is When arranged differently from each other, a plurality of metal rods, fine wires, or strips can be stretched around the crucible in a so-called lattice pattern or mesh pattern. This makes it possible to reliably raise the temperature of the entire vapor deposition material in the crucible evenly without uneven temperature rise.

また、本発明において、前記一つ又は複数の金属製の棒、細線又は帯状体を、坩堝内の上下方向における略中央部分から底部までの領域においてのみ配置するようにしたときは、ほとんどの場合において蒸着材料が坩堝内に収容されるのは前記坩堝内の上下方向における略中央部分から底部までの領域内であることから、ほとんどの場合に坩堝内の蒸着材料の全体を均等に昇温させることが可能になると共に、坩堝内の上下方向における略中央部分から上方の放出口までの領域には金属製の棒、細線又は帯状体が配置されていないので、坩堝内の蒸着材料が加熱、蒸発されて蒸発分子が放出口の方向に移動するときに金属製の棒、細線又は帯状体がそのスムーズな移動を阻害することが無くなるという効果が得られる。   Further, in the present invention, when the one or more metal rods, thin wires or strips are arranged only in the region from the substantially central portion to the bottom in the vertical direction in the crucible, in most cases In this case, the vapor deposition material is accommodated in the crucible in the region from the substantially central portion to the bottom in the vertical direction of the crucible, so that in most cases, the entire vapor deposition material in the crucible is heated uniformly. In addition, since a metal rod, a thin wire or a strip-like body is not disposed in the region from the substantially central portion in the vertical direction in the crucible to the upper discharge port, the vapor deposition material in the crucible is heated, When evaporated and the evaporated molecules move in the direction of the discharge port, an effect is obtained that the metal rod, thin wire or strip does not hinder the smooth movement.

さらに、本発明において、前記金属製の棒、細線又は帯状体を坩堝の内壁面に対して例えば溶接などにより固定的に配置するときは、坩堝内で前記金属製の棒、細線又は帯状体が脱落するなどの心配がなく安定的に装置を作動させることができると共に内壁面からの熱を確実に坩堝内の全体に伝えることができる。他方、本発明において、前記金属製の棒、細線又は帯状体を坩堝の内壁面に対して着脱自在に配置するときは、前記金属製の棒、細線又は帯状体を容易に坩堝から取り外すことができるので坩堝のメンテナンスなどが極めて容易に行えるようになる。   Furthermore, in the present invention, when the metal rod, thin wire, or strip is fixedly disposed on the inner wall surface of the crucible, for example, by welding, the metal rod, thin wire, or strip is placed in the crucible. The apparatus can be operated stably without worrying about dropping off, and the heat from the inner wall surface can be reliably transmitted to the entire crucible. On the other hand, in the present invention, when the metal rod, thin wire or strip is detachably disposed on the inner wall surface of the crucible, the metal rod, thin wire or strip can be easily removed from the crucible. As a result, crucible maintenance can be performed very easily.

(a)及び(b)はそれぞれ本発明の一実施形態に係る蒸着源坩堝の外観を示す側面図及び正面図である。(A) And (b) is the side view and front view which respectively show the external appearance of the vapor deposition source crucible which concerns on one Embodiment of this invention. (a)及び(b)はそれぞれ図1の蒸着源坩堝の側断面図及び正面から見た断面図、(c)は図1の蒸着源坩堝の平面図である。(A) And (b) is the sectional side view and sectional drawing seen from the front of the vapor deposition source crucible of FIG. 1, respectively, (c) is the top view of the vapor deposition source crucible of FIG. 本実施形態の効果を確認するために本発明者が行った実験内容を説明するための図である。It is a figure for demonstrating the content of the experiment which this inventor performed in order to confirm the effect of this embodiment. 本実施形態の効果を確認するために本発明者が行った実験結果を説明するための図である。It is a figure for demonstrating the experimental result which this inventor performed in order to confirm the effect of this embodiment. (a)及び(b)はそれぞれ本発明の他の実施形態に係る蒸着源坩堝を説明するための図である。(A) And (b) is a figure for demonstrating the vapor deposition source crucible which concerns on other embodiment of this invention, respectively. 従来の真空チャンバ内において基板表面に薄膜を形成するための薄膜形成装置に使用される分子線源セルを示す断面図である。It is sectional drawing which shows the molecular beam source cell used for the thin film forming apparatus for forming a thin film on the substrate surface in the conventional vacuum chamber.

次に本発明の実施の形態を図面を用いて説明する。図1(a)及び(b)はそれぞれ本発明の一実施形態に係る蒸着源坩堝の外観を示す側面図及び正面図、図2(a)及び(b)はそれぞれ本実施形態の側断面図及び正面から見た断面図、(c)は本実施形態の平面図である。   Next, embodiments of the present invention will be described with reference to the drawings. 1A and 1B are a side view and a front view showing the appearance of a vapor deposition source crucible according to an embodiment of the present invention, respectively, and FIGS. 2A and 2B are side sectional views of the present embodiment, respectively. Sectional view seen from the front, (c) is a plan view of the present embodiment.

図1,2において、11はその外周面に電気ヒーター(図示せず)が配置された有底円筒状の坩堝、11aは坩堝11の内壁面、11bは坩堝11の底部、12,13は前記坩堝11内に配置された例えばステンレス製の金属棒、14は前記坩堝11の上方に形成され蒸発分子を基板(図示せず)方向に放出する放出口である。   1 and 2, 11 is a bottomed cylindrical crucible having an electric heater (not shown) arranged on its outer peripheral surface, 11a is the inner wall surface of the crucible 11, 11b is the bottom of the crucible 11, and 12, 13 are the above-mentioned A metal rod 14 made of, for example, stainless steel disposed in the crucible 11 is an outlet that is formed above the crucible 11 and discharges evaporated molecules in the direction of the substrate (not shown).

本実施形態では、前記各金属棒12,13は、前記坩堝11の内壁面11aの互いに対向する部分に形成された各凹部又は孔などにそれぞれの端部が溶接され固定されている。すなわち、前記金属棒12,13の各端部は、前記各金属棒12,13が前記坩堝11の平面の半径方向に延びるように、前記内壁面11aの互いに対向する面の各凹部又は孔などにそれぞれ溶接されている。また、前記各金属棒12と前記各金属棒13とは、平面から見たとき互いに略直交するように(図2(c)参照)、且つ側面から見たとき上下方向の高さが互いに異なるように(図2(a)及び(b)参照)、配置されている。   In the present embodiment, the respective metal rods 12 and 13 are fixed by welding their respective end portions to respective recesses or holes formed in mutually opposing portions of the inner wall surface 11 a of the crucible 11. That is, the end portions of the metal rods 12 and 13 are respectively recessed portions or holes on the surfaces of the inner wall surface 11a facing each other such that the metal rods 12 and 13 extend in the radial direction of the plane of the crucible 11. Are welded to each. Further, the metal rods 12 and the metal rods 13 are substantially perpendicular to each other when viewed from the plane (see FIG. 2C), and have different vertical heights when viewed from the side. (See FIGS. 2A and 2B).

以上のように、本実施形態では、前記各金属棒12,13が、前記坩堝11の内壁面11aの互いに対向する部分をそれぞれ繋ぐように、平面視では互いに略直交するように、且つ上下方向の高さが互いに異なるように、前記坩堝11の内壁面11aに溶接、固定されている。よって、本実施形態によれば、坩堝11内に複数の金属棒12,13が言わば略格子状に張り巡らされたような状態になるので、前記坩堝11の外側に配置されたヒーター(図示せず)からの熱が坩堝11内の蒸着材料の全体に均等に伝えられるようになり、坩堝11内の蒸着材料の全体を確実にムラなく昇温させることが可能になる。   As described above, in the present embodiment, the metal rods 12 and 13 are connected to each other on the inner wall surface 11a of the crucible 11 so as to be substantially orthogonal to each other in plan view and in the vertical direction. Are welded and fixed to the inner wall surface 11a of the crucible 11 so that their heights are different from each other. Therefore, according to the present embodiment, since the plurality of metal rods 12 and 13 are stretched in a substantially lattice shape in the crucible 11, a heater (not shown) arranged outside the crucible 11 is shown. ) Can be evenly transmitted to the entire vapor deposition material in the crucible 11, and the entire vapor deposition material in the crucible 11 can be reliably heated without unevenness.

本発明者は、本実施形態に係る坩堝11を使用した場合の坩堝11内の蒸着材料の全体が所定温度まで均等に昇温するまでの待機時間などの測定実験を行った。図3はこの実験の内容を示す図である。図3に示すように、坩堝内の複数箇所に熱電対を予め設けておき、ヒーターによる加熱時における坩堝内の複数箇所の温度を測定した。   The inventor conducted measurement experiments such as a waiting time until the entire vapor deposition material in the crucible 11 was heated uniformly to a predetermined temperature when the crucible 11 according to this embodiment was used. FIG. 3 shows the contents of this experiment. As shown in FIG. 3, thermocouples were provided in advance at a plurality of locations in the crucible, and the temperatures at the plurality of locations in the crucible during heating by the heater were measured.

図4は上記実験結果を示す図である。図4に示すように、本実施形態に係る坩堝(図4では「現状」と表現している)を使用した場合、16時間で坩堝内の蒸着材料全体が目標温度までほぼ均等に昇温した。他方、本発明者が従来の坩堝を使用して実験した結果によると、従来の坩堝内の蒸着材料全体が目標温度までほぼ均等に昇温するまでに約24時間の待機時間が必要であった。よって、本実施形態に係る坩堝を使用することにより、従来例と比較して約30%以上も待機時間を短縮化することが可能になった。   FIG. 4 is a diagram showing the experimental results. As shown in FIG. 4, when the crucible according to the present embodiment (represented as “current state” in FIG. 4) is used, the entire vapor deposition material in the crucible is heated up to the target temperature almost uniformly in 16 hours. . On the other hand, according to the results of experiments conducted by the present inventor using a conventional crucible, a waiting time of about 24 hours was required until the entire deposition material in the conventional crucible was heated up to the target temperature almost uniformly. . Therefore, by using the crucible according to the present embodiment, the waiting time can be shortened by about 30% or more compared to the conventional example.

次に図5は本発明の他の実施形態に係る蒸着源坩堝の例を説明するための図である。図5(a)に示す例では、金属棒22,23の各端部が坩堝21の中心軸Cを介して互いに対向する内壁面21aの各部分にそれぞれ溶接されている(このような構成は、図1,2に関して前述した実施形態と略同様である)。また、図5(a)に示す例では、坩堝21内の図示上下方向における略中央部分から底部21bまでの領域内(図5(a)の符号A参照)においてのみ、前記金属棒22,23が、互いに水平視において略直交するように且つ互いに図示上下方向において重ならないように、すなわち全体として言わば略格子状となるように、配置されている。   Next, FIG. 5 is a figure for demonstrating the example of the vapor deposition source crucible which concerns on other embodiment of this invention. In the example shown in FIG. 5 (a), the end portions of the metal rods 22 and 23 are welded to the respective portions of the inner wall surface 21a facing each other through the central axis C of the crucible 21 (this configuration is And substantially the same as the embodiment described above with reference to FIGS. In the example shown in FIG. 5A, the metal rods 22, 23 are only in the region from the substantially central portion to the bottom 21b in the vertical direction in the figure in the crucible 21 (see reference numeral A in FIG. 5A). However, they are arranged so as to be substantially orthogonal to each other in the horizontal view and so as not to overlap each other in the vertical direction in the figure, that is, so as to have a substantially lattice shape as a whole.

よって、この図5(a)の例によるときは、前記坩堝21内で蒸着材料が収容される部分は、ほとんどの場合、坩堝21内の図示上下方向における略中央部分から底部21bまでの領域内(図5(a)の符号A参照)であることから、ほとんどの場合に前記坩堝21内の蒸着材料の全体を均等に昇温させることが可能になる。また、この図5(a)の例によるときは、坩堝21の図示上下方向の略中央部分から放出口24までの領域内(図5(a)の符号B参照)には前記金属棒22,23が配置されていないので、前記坩堝21内の蒸着材料が加熱され蒸発して蒸発分子が放出口24の方向に移動するときに金属棒22,23がそのスムーズな移動を阻害することが無くなるというメリットが得られる。   Therefore, according to the example of FIG. 5A, in most cases, the portion where the vapor deposition material is accommodated in the crucible 21 is in the region from the substantially central portion in the vertical direction of the crucible 21 to the bottom portion 21b. Therefore, it is possible to raise the temperature of the entire vapor deposition material in the crucible 21 evenly in most cases. 5A, in the region from the substantially central portion of the crucible 21 in the vertical direction of the crucible 21 to the discharge port 24 (see symbol B in FIG. 5A), the metal rods 22, 23 is not disposed, the vapor deposition material in the crucible 21 is heated and evaporated to prevent the metal rods 22 and 23 from obstructing the smooth movement when the evaporated molecules move in the direction of the discharge port 24. The advantage is obtained.

また、図5(b)に示す例では、坩堝31の内部において、内壁面31aの底部31bの近傍部分35と上記部分35に中心軸Cを介して対向する内壁面31aの図示上下方向の略中央部分36との間を繋ぐように、例えば2本の金属棒32,33の各端部がそれぞれ前記各部分35,36に溶接、固定されている。このように、この図5(b)に示す例においても、前記図5(a)に示す例と同様に、前記坩堝31内の図示上下方向の略中央部分36から底部21b(又は前記部分35)までの領域内(図5(b)の符号A参照)においてのみ、前記金属棒32,33が配置されている。   Further, in the example shown in FIG. 5B, in the crucible 31, in the illustrated vertical direction of the inner wall surface 31 a facing the portion 35 near the bottom portion 31 b of the inner wall surface 31 a and the portion 35 via the central axis C. For example, the ends of two metal rods 32 and 33 are welded and fixed to the portions 35 and 36, respectively, so as to connect the central portion 36. Thus, in the example shown in FIG. 5B as well, as in the example shown in FIG. 5A, the bottom 21b (or the part 35) from the substantially central portion 36 in the illustrated vertical direction in the crucible 31. The metal rods 32 and 33 are disposed only in the region up to (see the symbol A in FIG. 5B).

よって、この図5(b)の例によるときも、坩堝31内で蒸着材料が収容される部分は、ほとんどの場合、前記坩堝31内の図示上下方向の略中央部分36から底部21b(又は前記部分35)までの領域内(図5(b)の符号A参照)であることから、ほとんどの場合に前記坩堝31内の蒸着材料の全体を均等に昇温させることが可能になる。また、この図5(b)の例によるときも、前記坩堝31の図示上下方向の略中央部分36から放出口34までの領域内(図5(b)の符号B参照)には金属棒32,33が配置されていないので、前記坩堝31内の蒸着材料が加熱され蒸発して蒸発分子が放出口34の方向に移動するときに金属棒32,33がそのスムーズな移動を阻害することが無くなるというメリットも得られる。   Therefore, even in the example of FIG. 5B, in most cases, the portion in which the vapor deposition material is accommodated in the crucible 31 is from the substantially central portion 36 in the vertical direction of the illustration in the crucible 31 to the bottom 21b (or the above-described portion). Since it is in the region up to the portion 35) (see symbol A in FIG. 5B), in most cases, the entire vapor deposition material in the crucible 31 can be heated uniformly. Also in the example of FIG. 5B, a metal rod 32 is provided in the region from the substantially central portion 36 in the vertical direction of the crucible 31 to the discharge port 34 (see symbol B in FIG. 5B). , 33 are not disposed, the vapor deposition material in the crucible 31 is heated and evaporated to cause the metal rods 32, 33 to hinder the smooth movement when the evaporated molecules move in the direction of the discharge port 34. There is also a merit that it will disappear.

以上、本発明の実施形態について説明したが、本発明は前記実施形態として述べたものに限定されるものではなく、様々な修正及び変更が可能である。例えば、前記実施形態においては、金属棒12,13をステンレス製としたが、本発明における金属製の棒、細線又は帯状体の材料としては、これに限られるものではなく、例えば銅、銀、又は合金など様々な金属材料を使用することができる。また前記実施形態では、金属製の棒、細線又は帯状体の例として、直線状の金属棒を示したが、本発明においてはこれに限られるものではなく、複雑な形状などに湾曲された金属製の棒、細線又は帯状体を坩堝内に配置するようにしてもよい。また前記実施形態においては、複数の金属棒を坩堝内で互いに平面視で略直交させることにより全体として言わば略格子状となるように配置するようにしたが、本発明ではこれに限られるものではなく、例えば複数の金属棒を、それらが坩堝内で互いに平面視で様々な角度に交差して全体として略網の目状となるように配置するようにしてもよい。   Although the embodiment of the present invention has been described above, the present invention is not limited to the embodiment described above, and various modifications and changes can be made. For example, in the above-described embodiment, the metal rods 12 and 13 are made of stainless steel. However, the material of the metal rods, thin wires, or strips in the present invention is not limited to this, and for example, copper, silver, Alternatively, various metal materials such as alloys can be used. Moreover, in the said embodiment, although the linear metal rod was shown as an example of a metal rod, a thin wire | line, or a strip | belt-shaped body, in this invention, it is not restricted to this, The metal curved by the complicated shape etc. You may make it arrange | position a manufacturing rod, a thin wire | line, or a strip | belt shaped object in a crucible. In the above embodiment, the plurality of metal rods are arranged in a crucible so as to form a substantially lattice shape as a whole by being substantially orthogonal to each other in plan view. However, the present invention is not limited to this. Instead, for example, a plurality of metal rods may be arranged in a crucible so that they cross each other at various angles in plan view and have a substantially net-like shape as a whole.

さらに、前記実施形態では、金属棒の各端部を坩堝の内壁面に溶接し固定するようにしたが、本発明ではこれに限られるものではなく、例えば、坩堝の内壁面を押圧可能で且つ内壁面に突出する方向及び内壁面から離れる方向に弾性変形可能に形成された複数の突出部分と坩堝内の水平方向における中心側に位置する部分とを有する金属製の細線又は帯状体を坩堝内に着脱自在に挿入する(この場合、挿入中は前記突出部分が坩堝内壁面に当接、押圧する)ようにしてもよいし、あるいは、常温下では坩堝の内壁面を押圧しないが高温下では坩堝の内壁面を押圧するように変形可能に形成された複数の突出部分と坩堝の水平方向における中心側に位置する部分とを有する形状記憶合金製の細線又は帯状体を坩堝内に着脱自在に挿入する(この場合、挿入中の高温下では前記突出部分が坩堝の内壁面に当接、押圧する)ようにしてもよい。   Furthermore, in the above-described embodiment, each end of the metal rod is welded and fixed to the inner wall surface of the crucible. However, the present invention is not limited to this. For example, the inner wall surface of the crucible can be pressed and A metal thin wire or strip having a plurality of projecting portions formed so as to be elastically deformable in a direction protruding from the inner wall surface and a direction away from the inner wall surface, and a portion located on the center side in the horizontal direction in the crucible (In this case, during the insertion, the protruding portion abuts against and presses the inner wall surface of the crucible), or does not press the inner wall surface of the crucible at room temperature, but at a high temperature. A thin wire or strip made of shape memory alloy having a plurality of projecting portions formed so as to be deformable so as to press the inner wall surface of the crucible and a portion located on the center side in the horizontal direction of the crucible is detachable in the crucible. Insert (this If, contact with the inner wall surface of the projecting portion crucible in a high temperature during insertion, it may be pressed to) as.

11,21,31 坩堝
11a,21a,31a 内壁面
11b,21b,31b 底部
12,13,22,23,32,33 金属棒
14,24,34 放出口
11, 21, 31 Crucible 11a, 21a, 31a Inner wall surface 11b, 21b, 31b Bottom part 12, 13, 22, 23, 32, 33 Metal rod 14, 24, 34 Discharge port

Claims (1)

外側に配置されたヒーターからの熱により内部の蒸着材料を加熱するための蒸着源坩堝であって、前記坩堝の内壁面の互いに対向する部分をそれぞれ繋ぐ複数の直線状の金属製の棒又は細線が、平面視で互いに交差し且つ側面視でも互いに交差するように、配置されている、ことを特徴とする蒸着源坩堝。 A vapor deposition source crucible for heating an internal vapor deposition material by heat from a heater arranged on the outside, and a plurality of linear metal rods or thin wires respectively connecting mutually facing portions of the inner wall surface of the crucible The vapor deposition source crucible is arranged so as to cross each other in a plan view and also cross in a side view .
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