JP6079966B2 - Composition for forming ferroelectric thin film and method for producing the same - Google Patents

Description

The present invention obtains a thin film with high crystallinity in a composition (sol-gel solution) for forming a ferroelectric thin film such as a PZT system with almost no cracks during firing even if the coating film is thick at one time. Therefore, the present invention relates to a composition for forming a ferroelectric thin film that can increase the production efficiency of a thin film by reducing the number of coatings, and a method for producing the same.

In order to form a ferroelectric thin film used for a dielectric layer such as a thin film capacitor by a sol-gel method, a sol-gel solution for forming the thin film is applied to a substrate, and this coating film is subjected to a manufacturing process of calcining and baking. In this case, if it is attempted to obtain a thicker film by increasing the coating amount at one time, there is a problem that the tensile stress generated in the film during firing or the like increases and cracks occur in the thin film after firing.

Conventionally, the thickness of a film that can be formed by a single coating is limited to about 100 nm in the sol-gel method, because a crack is present in the formed thin film, so that the electrical characteristics and the like are reduced. In order to form the film, the application of the composition, baking, and the like are repeated a plurality of times. Therefore, the production efficiency of the thin film is low and the cost is high.

Accordingly, a raw material liquid capable of forming a thick coating film by one coating has been studied conventionally. For example, in Patent Document 1, propylene glycol is used as a raw material liquid for forming a Ti-containing metal oxide thin film. It is said that a thin film that does not generate cracks can be formed even if a thick film having a thickness of 0.2 μm or more is formed by one application. Further, in Non-Patent Document 1, a tensile stress generated during film formation is reduced by adding a polymer compound to a high-concentration sol-gel solution for forming a ferroelectric thin film, and a coating film formed by a single application. Even if the thickness is increased, a thin film can be formed without generating cracks.

Further, in the metal oxide thin film forming composition using a metal alkoxide, by adding a hydrophilic polymer such as polyvinylpyrrolidone (PVP) or polyvinylacetamide (PNVA) to a solvent containing a chelate such as acetic acid, It is known that a thin film having a thickness of 0.5 μm or more is formed by one application (Patent Documents 2 and 3).

JP 2001-261338 A JP 2002-255553 A JP 2002-274850 A

J Sol-Gel Sci Technol (2008) 47: 316-325

If a raw material liquid added with a highly viscous diol as described in Patent Document 1 or a raw material liquid added with a polymer compound described in Non-Patent Document 1, voids are easily formed during film formation. There is a problem that it is difficult to obtain a high-quality ferroelectric thin film.

In the conventional technique using PVP or PNVA, a thick film is formed by adjusting the viscosity of the liquid by using PVP or PNVA together with a chelating agent such as acetic acid. In a solvent system not containing acetic acid or the like, The effect is unknown, and the amount of PVP and PNVA used is as large as 0.2 times mol or more of the metal alkoxide, and the crystallinity is insufficient in addition to the suppression of cracks.

Specifically, even if the viscosity of the liquid is adjusted by using PVP or PNVA together with a chelating agent such as acetic acid, cracks occur in the coating unless the internal stress of the coating is sufficiently relaxed in the calcining stage of the applied coating. Cheap. Also, in the final firing stage of the film, a film with high crystallinity cannot be obtained unless the film has sufficient hardness. In this way, the conventional method forms a thick coating film by adjusting the viscosity of the raw material liquid that forms the ferroelectric thin film, but even if the viscosity of the raw material liquid is adjusted, cracks are sufficiently suppressed. Difficult to do.

In the present invention, instead of the conventional method of adjusting the viscosity of the raw material liquid, the metal component of the raw material liquid of the ferroelectric thin film takes up oxygen during firing and controls the reaction to form a ferroelectric structure (reaction Control substance) is added to the raw material solution to adjust the Young's modulus of the film formation through the calcination process and the baking process, and even if the coating film is thick, the generation of cracks is sufficiently suppressed. A ferroelectric thin film forming composition capable of obtaining a high thin film and a method for producing the same are provided.

The present invention provides a composition for forming a ferroelectric thin film and a method for producing the same, which solve the above problems by the following constitution.
[1] A composition comprising a ferroelectric thin film precursor, a solvent, a reaction control substance, and water , wherein a ferroelectric thin film is formed by calcining and firing the coating, and the oxide equivalent of the precursor The content is 17 to 35% by mass, the amount of diol in the solvent is 16 to 56% by mass, and 0.001 to 0.25 mol of the reaction control substance and 0.5 to 3 mol of water with respect to 1 mol of the precursor. by, wherein the deposition of the Young's modulus at calcination stage 200 ° C. to 300 ° C. is the formation of Young's modulus in the sintering step of a by 400 ° C. to 500 ° C. or less 42GPa was set to more than 55GPa A composition for forming a ferroelectric thin film.
[2] The composition for forming a ferroelectric thin film as described in [1] above, wherein the reaction control substance is polyvinylpyrrolidone (PVP), polyacrylamide, or polyvinylacetamide.
[3] A metal component raw material for the ferroelectric thin film, a solvent diol of 16 to 56% by mass, and water in an amount of 0.5 to 3 mol with respect to 1 mol of the precursor are placed in a reaction vessel, and in an inert atmosphere. The precursor liquid of the ferroelectric thin film is formed by heating and refluxing, and the reaction control substance is added to the precursor liquid in an amount of 0.0025 to 0.25 mol of the reaction control substance with respect to 1 mol of the precursor. as Young's modulus of the film forming becomes more 55GPa in the firing stage were the Young's modulus of film formation 42GPa below 400 ° C. to 500 ° C. in the calcination stage to 300 ° C., stirred and mixed, the strength in addition to the solvent The manufacturing method of the composition for ferroelectric thin film formation characterized by adjusting the density | concentration of a dielectric thin film precursor to 17-35 mass% in conversion of an oxide.
[4] A method for producing a ferroelectric thin film using the composition for forming a ferroelectric thin film according to [ 1] or [2] .

[Specific description]
The composition for forming a ferroelectric thin film of the present invention comprises a precursor of a ferroelectric thin film, a solvent, a reaction controlling substance, and water , and the ferroelectric thin film is formed by calcining and firing the coating film. The oxide-converted content of the precursor is 17 to 35% by mass, the diol content of the solvent is 16 to 56% by mass, and the reaction control substance is 0.0025 to 0.25 mol with respect to 1 mol of the precursor. By including 0.5 to 3 moles of water, the Young's modulus of film formation in the calcination stage of 200 ° C to 300 ° C is 42 GPa or less, and the Young's modulus of film formation in the firing stage of 400 ° C to 500 ° C is 55 GPa or more. A composition for forming a ferroelectric thin film, characterized in that:

In the composition of the present invention, the ferroelectric is, for example, lead zirconate titanate (PZT). The PZT ferroelectric is a composite metal oxide having a perovskite structure represented by the general formula: Pb (Zr _x Ti _1-x ) O ₃ (0 <x <1), and has a large dielectric constant, piezoelectricity, and ferroelectricity. It has sex.
The ferroelectric of the present invention includes PMnZT in which Mn element is added to PZT, PNbZT in which Nb element is added, and PLaZT in which La element is added. Hereinafter, the present invention will be described by taking a PZT ferroelectric as an example.

The composition for forming a PZT ferroelectric is a sol-gel liquid (PZT precursor liquid) containing a PZT precursor for forming a PZT thin film. The PZT precursor liquid is applied to a substrate, and the coating film is calcined to form a metal component. Decomposition and bonding of oxygen and incorporation of oxygen proceed, followed by firing to form a crystalline PZT thin film.

The PZT precursor is obtained by blending raw materials of each metal element so that the respective metal elements such as Pb, Zr, Ti, etc. have a quantitative ratio that forms a PZT ferroelectric, and these raw materials include organic groups. A metal compound bonded through the oxygen or nitrogen atom is preferably used. For example, one kind selected from the group consisting of metal alkoxide, metal diol complex, metal triol complex, metal carboxylate, metal β-diketonate complex, metal β-diketoester complex, metal β-iminoketo complex, and metal amino complex Alternatively, two or more kinds of compounds can be used. Particularly preferred compounds are metal alkoxides, partial hydrolysates thereof, and organic acid salts.

A raw material and a solvent for each metal element such as Pb, Zr, and Ti are placed in a reaction vessel, heated under an inert atmosphere and refluxed to form a PZT precursor liquid. The raw materials for each metal element are mixed in such amounts that the ratio of the metal elements forming the PZT ferroelectric is obtained.

The concentration of the PZT precursor in the composition is preferably 17 to 35% by mass in terms of oxide, more preferably 20 to 25% by mass. If it is less than 17% by mass, a sufficient film thickness cannot be obtained. On the other hand, if it exceeds 35% by mass, cracks tend to occur.

As the solvent, diols such as (A) propylene glycol, ethylene glycol, and 1,3-propanediol can be used. By using a diol as a solvent, the storage stability of the composition can be enhanced.

Examples of other solvents include (B) alcohols other than carboxylic acids and diols, esters, ketones (eg, acetone, methyl ethyl ketone), ethers (eg, dimethyl ether, diethyl ether), cycloalkanes (eg, cyclohexane, cyclohexanol). ), Aromatics (for example, benzene, toluene, xylene), other tetrahydrofuran, and the like.

When alcohol is used as a solvent, a linear monoalcohol having 1 to 4 carbon chains is preferable for dilution use from the viewpoints of liquid applicability and drying properties. In addition, for the purpose of densifying the film, a linear monoalcohol having 6 to 12 carbon chains may be used together with a linear monoalcohol having 1 to 4 carbon chains. This makes it possible to form a gel film that can effectively release organic substances out of the film during calcination, and a dense and high-performance PZT film can be obtained even if the coating film is thickened. If the alcohol has less than 6 carbon chains, the boiling point is not sufficiently high, so that the film is not sufficiently densified. On the other hand, if the carbon chain exceeds 12, the solubility in the sol-gel solution is low and a sufficient amount is dissolved. In addition, the viscosity of the liquid becomes so high that it cannot be applied uniformly.

The composition of the present invention may contain a polar solvent such as a formamide solvent such as formamide, N-methylformamide, N, N-dimethylformamide. By using a formamide solvent or the like together, cracks can be further suppressed and a dense film can be formed.

When using diol for a solvent, 16-56 mass% is preferable in the amount of diol in a composition. This is because if the amount of diol is less than 16% by mass, the storage stability is lowered, while if it exceeds 56% by mass, voids are easily generated in the film.

The composition of the present invention preferably contains water such as ion exchange water or ultrapure water. By containing a predetermined amount of water, the PZT precursor is moderately hydrolyzed and an effect of increasing the densification of the film is obtained. The amount of water is preferably 0.5 to 3 mol, more preferably 0.8 to 2 mol, relative to 1 mol of the PZT precursor. When the amount of water is less than 0.5 mol, hydrolysis is insufficient and the densification of the film does not proceed sufficiently. On the other hand, when the amount of water exceeds 3 mol, hydrolysis proceeds excessively to cause precipitation, and cracks are likely to occur in the film.

The composition of the present invention contains a reaction control substance together with a precursor of a ferroelectric thin film such as PZT and a solvent. The reaction control substance is a substance that controls a reaction that takes in oxygen and forms a ferroelectric structure during firing. By containing this reaction control substance, the Young's modulus of the film formation at the time of calcination and baking of the coating film is controlled. Specifically, the composition of the present invention has a Young's modulus of film formation in a calcining stage of 200 ° C. to 300 ° C. of 42 GPa or less and a Young's modulus of film formation in a baking stage of 400 ° C. to 500 ° C. It is a composition controlled to be 55 GPa or more.

As the reaction control substance, polyvinyl pyrrolidone, polyacrylamide, or polyvinyl acetamide can be used. The content of these reaction control substances is such that the Young's modulus of film formation in the calcination stage of 200 ° C. to 300 ° C. is 42 GPa or less, and the Young's modulus of film formation in the baking stage of 400 ° C. to 500 ° C. is 55 GPa or more. Amount.

Specifically, for example, the content of the reaction control substance of polyvinyl pyrrolidone, polyacrylamide, or polyvinyl acetamide is preferably 0.0025 to 0.25 mol, and 0.0025 to 0.2 mol per mol of the PZT precursor. Less than mol is more preferable. If the content of the reaction control substance is less than the appropriate amount, the Young's modulus of the film formation in the calcining stage at 200 ° C. to 300 ° C. exceeds 42 GPa, and the internal stress of the film is not sufficiently relaxed, so that cracks are likely to occur. On the other hand, when the content of the reaction control substance is larger than an appropriate amount, the Young's modulus of film formation in the main baking stage at 400 ° C. to 500 ° C. becomes less than 55 GPa, and a dense thin film with high crystallinity cannot be obtained.
In the prior art using polyvinyl pyrrolidone or polyacrylamide of Patent Documents 1 and 2, the amount of polyvinyl pyrrolidone or the like is preferably 0.2 to 15 times mol, preferably 0.3 to 1 times mol of the metal alkoxide. However, if the amount used is large, cracking of the coating is suppressed, but a coating with high crystallinity cannot be obtained.

Composition for forming a ferroelectric thin film (the oxide precursor content of the ferroelectric precursor is 17 to 35% by mass, the diol content of the solvent is 16 to 56% by mass, 0.5 mol of water relative to 1 mol of the ferroelectric precursor) About 3 moles), (b) when the reaction control substance is not included, (b) when the reaction control substance is contained in an appropriate amount, and (c) when the reaction control substance is included in excess, formed using these compositions. FIG. 1 shows a change in Young's modulus of film formation when the coated film was baked at 200 ° C. to 500 ° C.
As shown in the figure, the Young's modulus of film formation varies depending on the reaction control substance as follows.
(A) When a coating film is formed using a composition for forming a PZT ferroelectric thin film that does not contain a reaction controlling substance, the Young's modulus of film formation is approximately proportional to the firing temperature from 200 ° C. to 300 ° C. It increases almost linearly up to 55 GPa, and the Young's modulus gradually increases when the temperature reaches about 330 ° C. or higher.
(B) When a coating film is formed using a composition for forming a PZT ferroelectric thin film containing an appropriate amount of a reaction control substance, the Young's modulus of film formation is proportional to the firing temperature from 200 ° C. to about 280 ° C. Although it increases almost linearly up to about 35 GPa, the Young's modulus in the range of about 280 ° C. to about 350 ° C. is almost constant, and in the range of about 350 ° C. to about 400 ° C., the Young's modulus increases again almost linearly, When the temperature is about 450 ° C. or higher, the Young's modulus increases to about 55 GPa.
(C) When a coating film is formed using a composition for forming a PZT ferroelectric thin film containing an excessive amount of a reaction control substance, the film is formed in proportion to the firing temperature from about 250 ° C. to about 300 ° C. The rate increases almost linearly up to about 35 GPa, but when it reaches about 400 ° C. or higher, the Young's modulus does not improve and tends to decrease slightly.

The film quality of the above (a) is dense because the Young's modulus is improved to about 55 GPa, but the Young's modulus rapidly increases in the calcining stage at 250 ° C. to 300 ° C., so that cracks are likely to occur. In addition, since the film quality of (c) above has a Young's modulus of about 25 GPa, the bond between the metal and oxygen in the film is not sufficiently formed, and the crystallinity is low, and a porous and dense thin film can be obtained. Can not. When the Young's modulus of film formation is lower than about 50 GPa, the bond between the metal and oxygen in the film is not sufficiently formed, and the film has low crystallinity.

On the other hand, in the above (b), the Young's modulus is almost constant up to about 350 ° C after the Young's modulus has been improved in the calcining stage of about 200 ° C to about 250 ° C, so that sufficient elastic deformation or plastic deformation of the film occurs. Since the internal stress of the film is sufficiently relaxed, cracks are hardly generated. When the firing temperature is about 390 ° C. or higher, the Young's modulus rises almost linearly again to about 55 GPa, and a dense and highly crystalline thin film can be obtained.

Note that the change in Young's modulus of the coating film using the conventional composition for forming a ferroelectric thin film that does not contain a reaction controlling substance shows a tendency similar to that shown in FIG.
Moreover, the Young's modulus of the coating film using the composition for forming a ferroelectric thin film of Patent Documents 1 and 2 is 13 to 30 GPa in the calcining stage at 200 ° C. to 300 ° C., and the firing stage at 400 ° C. to 500 ° C. Then, it is 28 to 45 GPa, and shows a tendency similar to FIG.

As described above, the composition for forming a ferroelectric thin film of the present invention can provide a thin film with high crystallinity in which cracks are sufficiently suppressed by containing an appropriate amount of a reaction control substance. Specifically, for example, the PZT thin film forming composition preferably has the following composition.
(Ii) PZT precursor oxide content 17-35 mass%, solvent diol content 16-56 mass%, PZT precursor 1 mol, water 0.5-3 mol, and PZT precursor 1 mol A composition for forming a PZT ferroelectric thin film containing 0.0025 to 0.25 mol of polyvinyl pyrrolidone with respect to the base.
(B) PZT precursor oxide content 17-35% by mass, solvent diol content 16-56% by mass, PZT precursor 1 mol, water 0.5-3 mol, and PZT precursor 1 mol A composition for forming a PZT ferroelectric thin film containing 0.0025 to 0.25 mol of polyacrylamide with respect to the composition.
(C) PZT precursor oxide content of 17 to 35% by mass, solvent diol content of 16 to 56% by mass, water to 0.5 to 3 mol and 1 mol of PZT precursor to 1 mol of PZT precursor. A composition for forming a PZT ferroelectric thin film, containing 0.0025 to 0.25 mol of polyvinylacetamide with respect to the base.

A ferroelectric thin film is formed using the composition for forming a ferroelectric thin film of the present invention. For example, a liquid of the composition for forming a ferroelectric thin film of the present invention is dropped on the surface of a substrate, a coating film is formed by spin coating or other appropriate means, and this coating film is heated and fired to ferroelectricity. A body thin film can be formed.

The composition for forming a ferroelectric thin film of the present invention includes a precursor of a ferroelectric thin film, a solvent, and a reaction control substance, and the film formation in the calcining stage in which the content of the reaction control substance is 200 ° C. to 300 ° C. The amount of Young's modulus of the film is 42 GPa or less and the Young's modulus of the film formation in the baking stage at 400 ° C. to 500 ° C. is 55 GPa or more. Therefore, the film undergoes sufficient elastic deformation or plastic deformation in the calcination stage. Since the internal stress is sufficiently relieved, cracks are unlikely to occur, and a thin film having a high Young's modulus of about 50 GPa or more and a high density and high crystallinity can be obtained.

The graph which shows the change of the Young's modulus of film-forming when the coating film formed with the composition for PZT ferroelectric thin film formation was baked at 200 to 500 degreeC.

Less than. The Example of this invention is shown with a comparative example. The Young's modulus of film formation was measured by a nanoindentation method (model number: ENT-1100a manufactured by Elionix). The crystallinity of the film was measured by XRD measurement (model number: Empyrean, manufactured by PANalytical).

[Example 1]
Lead acetate trihydrate, titanium (iv) tetraisopropoxide, zirconium (iv) tetrabutoxide, acetylacetone and propylene glycol were weighed, put into a reaction vessel, and refluxed at 150 ° C. for 1 hour in a nitrogen atmosphere. After refluxing, unreacted substances were removed by distillation under reduced pressure. After cooling at room temperature, water was added to 0.5 to 3 mol of water with respect to 1 mol of the PZT precursor, and the mixture was refluxed at 150 ° C. for 1 hour. After cooling to room temperature, a PZT precursor liquid that forms Pb (Zr _x Ti _1-x ) O ₃ (x = 0.52) was prepared. To this PZT precursor liquid, PVP was added at 0.0025 to 0.25 mol in terms of monomer with respect to 1 mol of the PZT precursor, and stirred at room temperature for 24 hours. After stirring, ethanol, 1-butanol and 1-octanol were added, and the solution was diluted to a PZT precursor concentration of 25% by mass in terms of oxide. The obtained liquid was dropped on the surface of the Si / SiO ₂ / TiOx / Pt substrate and spin-coated at 1500 rpm for 60 seconds to form a coating film. This coating film was baked to 200 ° C. to 500 ° C. to form a PZT thin film. During the heating, the Young's modulus of the film was measured with a nanoindenter at a load of 20 mg. Moreover, the presence or absence of a crack was observed from observation with an optical microscope. Furthermore, the crystallinity of the film was evaluated by XRD measurement. The results are shown in Table 1. In the table, the crystallinity of the film indicates that the crystallinity is high, and x indicates that the crystallinity is low.

[Comparative Example 1]
A PZT thin film was formed in the same manner as in the example except that 0 mol, 0.002 mol, 0.27 mol, and 0.35 mol of PVP were added in terms of monomer with respect to 1 mol of the PZT precursor. During the heating, the Young's modulus of the film was measured with a nanoindenter at a load of 20 mg. Moreover, the presence or absence of a crack was observed from observation with an optical microscope. Furthermore, the crystallinity of the film was evaluated by XRD measurement. The results are shown in Table 1.

As shown in Table 1, the compositions (A1 to A5) of the present invention have a Young's modulus of film formation of 42 GPa or less (31 GPa to 42 GPa) in the calcination stage at 300 ° C., and film formation in the baking stage at 450 ° C. Has a Young's modulus of 55 GPa or more (54 GPa to 60 GPa), and a PZT thin film having no cracks and high crystallinity can be obtained. On the other hand, in the comparative examples (B1 to B4), the Young's modulus of film formation at the calcination stage at 300 ° C. and the Young's modulus of film formation at the baking stage at 450 ° C. are both outside the scope of the present invention. Cracks occur in the B2 film, and the B3 and B4 films have low crystallinity.

[Example 2]
The composition liquid (A2 in Table 1) obtained in Example 1 was dropped on the surface of a Si / SiO ₂ / TiOx / Pt / 60 nm- (100) -PZT substrate and spin-coated at 2500 rpm for 60 seconds to form a coating film. did. The substrate on which this coating film was formed was dried on a hot plate at 75 ° C. for 2 minutes and pre-baked at 300 ° C. for 5 minutes. Further, after calcining at 450 ° C. for 5 minutes, the same operation was repeated to laminate two layers of coating films. The obtained calcined film was heated to 700 ° C. by RTA at a temperature rising rate of 50 ° C./s and then held for 1 minute to crystallize the calcined film. Such an operation was repeated 5 times. When the obtained PZT thin film was measured with a spectroscopic ellipsometer (product of JAWoolum, model number M-2000), the film thickness was 2060 nm. Moreover, it was confirmed that the film was free from cracks by observation with an optical microscope. When the cross-section was observed with SEM (Hitachi, product number S-4300), it was confirmed to be a dense columnar structure.

Example 3
A PZT thin film was formed in the same manner as in Example except that 0.0025 to 0.25 mol of polyacrylamide was added in terms of monomer to 1 mol of PZT precursor. During the heating, the Young's modulus of the film was measured with a nanoindenter at a load of 20 mg. Moreover, the presence or absence of a crack was observed from observation with an optical microscope. Furthermore, the crystallinity of the film was evaluated by XRD measurement. The results are shown in Table 2.

As shown in Table 2, the composition (C1 to C5) of the present invention has a Young's modulus of film formation of 42 GPa or less (26 to 41 GPa) in the calcining stage at 300 ° C., and the composition in the firing stage at 450 ° C. A Young's modulus of the film is 55 GPa or more (55 to 61 GPa), and a PZT thin film having no cracks and high crystallinity can be obtained.

Example 4
A PZT thin film was formed in the same manner as in Example except that 0.0025 to 0.25 mol of polyvinylacetamide was added in terms of monomer to 1 mol of PZT precursor. During the heating, the Young's modulus of the film was measured with a nanoindenter at a load of 20 mg. Moreover, the presence or absence of a crack was observed from observation with an optical microscope. Furthermore, the crystallinity of the film was evaluated by XRD measurement. The results are shown in Table 3.

As shown in Table 3, the compositions (D1 to D5) of the present invention have a Young's modulus of film formation of 42 GPa or less (26 to 41 GPa) in the calcination stage at 300 ° C., and the composition in the firing stage at 450 ° C. A Young's modulus of the film is 55 GPa or more (55 to 61 GPa), and a PZT thin film having no cracks and high crystallinity can be obtained.

Claims (4)

A composition comprising a precursor of a ferroelectric thin film, a solvent, a reaction control substance, and water , wherein the ferroelectric thin film is formed by calcining and firing the coating film, and the oxide equivalent content of the precursor is 17 200 to 35% by mass, 16 to 56% by mass of diol in the solvent, and 0.0025 to 0.25 mol of the reaction control substance and 0.5 to 3 mol of water with respect to 1 mol of the precursor, ° C. ferroelectric film formation of the Young's modulus in the calcination stage to 300 ° C. is the formation of Young's modulus in the sintering step of a by 400 ° C. to 500 ° C. or less 42GPa is characterized in that set to be more than 55GPa A composition for forming a thin film. 2. The composition for forming a ferroelectric thin film according to claim 1, wherein the reaction controlling substance is polyvinyl pyrrolidone (PVP), polyacrylamide, or polyvinyl acetamide. The amount of the metal component raw material of the ferroelectric thin film, the solvent diol 16 to 56% by mass, and water, which is 0.5 to 3 mol with respect to 1 mol of the precursor, is put in a reaction vessel and heated in an inert atmosphere. The precursor liquid of the ferroelectric thin film is formed by refluxing, and the reaction control substance is added to the precursor liquid in an amount of 0.0025 to 0.25 mol of the reaction control substance with respect to 1 mol of the precursor, and 200 ° C. to 300 ° C. temporary deposition of Young's modulus at tempering step was below 42GPa to 400 ° C. to 500 ° C. deposition of Young's modulus in the sintering stage is to be equal to or greater than 55 GPa, stirred and mixed, the ferroelectric thin film by adding a solvent The manufacturing method of the composition for ferroelectric thin film formation characterized by adjusting the density | concentration of a precursor to 17-35 mass% in conversion of an oxide. A method for producing a ferroelectric thin film using the composition for forming a ferroelectric thin film according to claim 1 .

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