JP6097489B2 - Sealing resin film for light emitting diode and light emitting diode package - Google Patents

Description

  The present invention relates to a light-emitting diode sealing resin film for sealing the entire surface of a light-emitting diode in a light-emitting diode package, and a light-emitting diode package using the same.

  2. Description of the Related Art In recent years, light-emitting diodes that are power-saving and have a long life compared with conventional incandescent bulbs and fluorescent lamps have become increasingly important as light sources for lighting equipment and the like. In particular, the development of high-intensity white light-emitting diodes that can be used in automobile headlights instead of conventional low-intensity light-emitting diodes has been rapidly spreading.

  As an example of such a light emitting diode, a light emitting diode 91 provided on a light-transmitting substrate 93 is sealed in a metal can 94 filled like a light emitting diode package 90 shown in FIG. A light emitting diode sealed with a stop resin 92 can be used. The light generated by the light emitting diode 91 is reflected by the can 94 and is emitted from the light transmissive substrate 93 side.

  Further, as an example of the light emitting diode, a wall 106 is provided around the light emitting diode 101 provided on the light-transmitting substrate 103 as shown in the light emitting diode package 100 shown in FIG. The sealing resin 104 is filled in the partition, and the sealing substrate 104 is provided on the opposite side of the light transmissive substrate 103. A reflective layer 105 is provided on the upper surface of the light emitting diode 101, and light generated by the light emitting diode 101 is reflected by the reflective layer 105 or the sealing substrate 102 and emitted from the light transmissive substrate 103 side (for example, Patent Document 1). See).

  Further, as the sealing resin, high light transmittance, weather resistance, low water permeability, and the like are required, and therefore, generally, a silicone resin or a special transparent epoxy resin is used (see, for example, Patent Document 2). ).

JP 2001-77430 A JP 2009-71264 A

However, in the light emitting diode package 90 shown in FIG. 9A, since the can 94 is used, the workability of the process of pasting the sealing resin 92 into the can 94 and bonding to the light emitting diode 91 is poor. Since it is used, it has a heavy weight and it is difficult to reduce the thickness.
In addition, the light emitting diode package 100 shown in FIG. 9B has a problem that the process of forming the wall 106 and the work when encapsulating the sealing resin 102 are complicated.
In addition, the sealing resin described in Patent Document 2 has a problem that the epoxy resin is likely to be deteriorated by light and heat in a high-intensity white diode whose demand has been increasing in recent years. A silicone resin that is excellent in resistance is employed. However, the silicone resin is expensive and has poor storage stability at room temperature, which inevitably increases the manufacturing cost of the light emitting diode package.

  In order to solve the problems of the prior art as described above, the present invention is separated from the structure of the conventional light emitting diode package 90 in which the inside of the can 94 and the wall 106 is filled with sealing resin, and is cheaper and easier to handle. It is an object of the present invention to provide an easy light emitting diode sealing method. Furthermore, another object of the present invention is to provide a light emitting diode package that can be manufactured easily and with high throughput.

In order to achieve the above-described object, the present application provides the following inventions.
(1) In a light emitting diode package, a light emitting diode sealing resin film for sealing the entire surface of the light emitting diode, having a sealing resin layer made of a sealing resin containing at least a light reflecting substance in the resin, The sealing resin film for light emitting diodes, wherein the concentration variation of the light reflecting substance in the sealing resin layer is within ± 5%.
(2) The light reflecting material is at least one light reflecting material selected from the group consisting of titanium oxide, zinc oxide, silicon dioxide, aluminum oxide, barium sulfate, zinc sulfide, and calcium carbonate. The sealing resin film as described in (1).
(3) The light reflecting material is at least one hygroscopic light reflecting material selected from the group consisting of barium oxide, calcium oxide, magnesium oxide, molecular sieve, zeolite, and silica gel (1). ).
(4) As the light reflecting material, at least one light reflecting material selected from the group consisting of titanium oxide, zinc oxide, silicon dioxide, aluminum oxide, barium sulfate, zinc sulfide, calcium carbonate, barium oxide, oxidation The sealing resin film according to (1), which has both of at least one hygroscopic light-reflecting material selected from the group consisting of calcium, magnesium oxide, molecular sieve, zeolite, and silica gel.
(5) The encapsulating resin film according to any one of (3) to (4), wherein the hygroscopic light-reflecting material has a cumulative particle size distribution with a particle size of less than 1 μm of 90% or less.
(6) The method according to any one of (1) to (5), wherein a buffer layer containing a light reflecting substance at a concentration of 0.01% by mass or less in the resin is provided on the light emitting diode bonding surface side in the sealing resin layer. The sealing resin film in any one.
(7) The sealing resin film according to any one of (1) to (6), further including a gas barrier layer on the opposite side of the sealing resin layer to the light emitting diode bonding surface.
(8) The sealing resin film according to (7), wherein the water vapor permeability is 0.1 g / (m ² · 24 hr) or less.
(9) The sealing resin film according to any one of (1) to (8), wherein the thickness is 5 μm or more.
(10) The sealing resin film according to any one of (1) to (9), wherein the thickness variation in each layer is 3 μm or less.
(11) A light transmissive substrate, a light emitting diode formed on the light transmissive substrate, a sealing substrate disposed to face the light emitting diode side of the light transmissive substrate, and the light transmissive The sealing resin film according to any one of (1) to (10), which seals between the conductive substrate and the sealing substrate so as to cover the entire surface of the light emitting diode. Light emitting diode package.
(12) The light emitting diode package according to (11), wherein a wavelength conversion material or a color filter is provided between the light transmissive substrate and the light emitting diode.
(13) The light emitting diode package according to (12), wherein the wavelength conversion material or the color filter has an adhesive force, and fixes the light emitting diode to the light transmissive substrate.

  According to the present invention, in the manufacture of a light emitting diode package, it is possible to perform sealing with a resin more inexpensively and easily. That is, since the sealing resin film for light-emitting diodes of the present invention is in a film form, it is less wasteful compared to conventional sealing materials that perform sealing by filling with a liquid or fluid resin. Storage is also easy.

(A) It is sectional drawing which shows the one aspect | mode of the sealing resin film for light emitting diodes of this invention. (B) It is sectional drawing which shows another one aspect | mode of the sealing resin film for light emitting diodes of this invention. (C) It is sectional drawing which shows another one aspect | mode of the sealing resin film for light emitting diodes of this invention. It is sectional drawing which shows the sealing resin film which has a sealing resin layer and a buffer layer as another one aspect | mode of the sealing resin film for light emitting diodes of this invention. (A) It is sectional drawing which shows the sealing resin film which has a gas barrier layer and a sealing resin layer as one further aspect of the sealing resin film for light emitting diodes of this invention. (B) It is sectional drawing which shows the sealing resin film which has a gas barrier layer, a sealing resin layer, and a buffer layer as another one aspect | mode of the sealing resin film for light emitting diodes of this invention. It is sectional drawing which shows the sealing sheet which bonded the protective film to the sealing resin film for light emitting diodes of this invention. It is sectional drawing which shows the one aspect | mode of the light emitting diode package of this invention. It is sectional drawing which shows another one aspect | mode of the light emitting diode package of this invention. It is the schematic diagram which illustrated the method of sealing a light emitting diode and a bonding wire using the sealing resin film for light emitting diodes of this invention, and setting it as a light emitting diode package. It is the schematic diagram which illustrated another method of sealing a light emitting diode and a bonding wire using the sealing resin film for light emitting diodes of this invention, and setting it as a light emitting diode package. (A), (b) It is sectional drawing which showed the light emitting diode packages 90 and 100 which sealed the light emitting diode using the conventional sealing material.

Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.
FIG. 1 is a cross-sectional view showing an embodiment of a light-emitting diode encapsulating resin film 1 of the present invention. That is, the sealing resin film 1a for a light emitting diode of the present invention has a sealing resin layer 2a made of a sealing resin 21 containing at least a light reflecting material 221 in a resin 211, as shown in FIG. The variation in the concentration of the light reflecting material 221 in the sealing resin layer 2a is within ± 5%.

  At this time, as the light reflecting material 221, at least one selected from the group consisting of titanium oxide, zinc oxide, silicon dioxide, aluminum oxide, barium sulfate, zinc sulfide, and calcium carbonate is preferably applied. Or as shown in FIG.1 (b), the sealing resin film 1b for light emitting diodes of this invention is a light-reflective substance in the sealing resin layer 2b, barium oxide, calcium oxide, magnesium oxide, molecular sieve, zeolite, At least one hygroscopic light reflecting material 222 selected from the group consisting of silica gel may be used. Among these, chemisorption desiccants such as barium oxide, calcium oxide, and magnesium oxide are irreversibly changed to hydroxides by reaction with water and do not re-release moisture. preferable.

  Or as shown in FIG.1 (c), the sealing resin film 1c for light emitting diodes of this invention has titanium oxide, zinc oxide, silicon dioxide, aluminum oxide, barium sulfate, zinc sulfide in the sealing resin layer 2c. And at least one light reflecting material 221 selected from the group consisting of calcium carbonate, and at least one hygroscopicity selected from the group consisting of barium oxide, calcium oxide, magnesium oxide, molecular sieve, zeolite, and silica gel. Both of the light reflecting materials 222 may be included. Even in this case, both the light reflecting material 221 and the hygroscopic light reflecting material 222 are combined so that the density variation is within ± 5%. When the density variation is more than ± 5%, the light reflection from the light emitting diode 61 becomes non-uniform, and when the light emitting diode package 6 is used in a lighting fixture or a liquid crystal display, unevenness in illuminance occurs. The user may experience fatigue or discomfort, which is not preferable.

  When the hygroscopic light reflecting material 222 is used as the light reflecting material, the hygroscopic light reflecting material contained in the sealing resin may have a cumulative particle size distribution with a particle size of less than 1 μm of 90% or less. preferable. This is because if the hygroscopic light-reflecting material 222 has a large amount of small particle size components, the reaction rate of the hygroscopic reaction increases, and the hygroscopic reaction material 222 absorbs moisture during production, losing the hygroscopic ability in the sealing resin film 1, This is because moisture absorption occurs only at the end of the sealing resin layer 2 and local particle size expansion occurs, which may cause the sealing resin layer to peel off.

  In the sealing resin film 1 of the present invention, the type of the resin 211 is not particularly limited, but preferably an inexpensive acrylic resin, polyester resin, polyvinyl butyral resin, ethylene / vinyl acetate copolymer, transparent A low-priced epoxy resin mixed composition or the like is applied. Furthermore, in the sealing resin film 1 of the present invention, the sealing resin 21 constituting the sealing resin layer 2 has fluidity and viscosity other than the resin 211, the reflective material 221 and the hygroscopic light reflective material 222. Additives and the like for achieving various purposes such as adjustment, coloring, and curing may be included. Specific examples include various inorganic fillers such as glass and mica, various organic fillers such as polystyrene, PET, and silicone, coupling agents, gelling agents, oligomers, reaction catalysts, and the like.

Moreover, the sealing resin layer 2 in the sealing resin film 1 of the present invention is prepared by blending a resin component, a light reflecting material and / or a hygroscopic light reflecting material as raw materials together with or separately from a dispersion solvent and other components, Sealing resin 21 obtained by stirring, dissolving, mixing, and dispersing while performing cold heat treatment as necessary, or an organic solvent solution thereof, for example, on a protective film subjected to surface release treatment, The film can be formed into a sheet by forming the film to an appropriate thickness by a method such as casting, spin coating, roll coating, and the like, and further drying at a temperature at which the reaction of the resin does not proceed.
In the step of stirring, dissolving, mixing, dispersing and the like, a disper, a planetary mixer, a ball mill, a bead mill, three rolls, or the like may be used in combination.

  Furthermore, as shown in FIG. 2, the sealing resin film 1d of the present invention has a light-reflective substance in the resin at 0.01% by mass or less on the light-emitting diode bonding surface 11 side in the sealing resin layer 2. By having the buffer layer 3 including the concentration, the adhesion between the sealing resin film 1d and the light emitting diode 61 is improved, and damage to the light emitting diode 61 by the light reflecting material 221 can be reduced.

  The sealing resin film 1e of the present invention may further have a gas barrier layer 4 on the opposite side of the sealing resin layer 2 from the bonding surface of the light emitting diode 11 as shown in FIG. As a result, the gas barrier layer 4 can prevent moisture from entering the light emitting diode 61 and suppress deterioration of the light emitting diode 61. Of course, as shown in FIG. 3B, a sealing resin film 1f having the buffer layer 3 on the light-emitting diode bonding surface 11 side in the sealing resin layer 2 and the gas barrier layer 4 on the opposite side may be used. Good. Examples of such a gas barrier layer 4 include a metal oxide or nitride thin film formed by a CVD method or the like. Further, the gas barrier layer 4 may be formed by bonding a gas barrier film to the sealing resin layer 2. Further, a gas barrier film may be prepared in advance, and the sealing resin layer 2 may be formed thereon to form the sealing resin film 1e.

Specifically, by making the water vapor permeability of the sealing resin film 1 0.1 g / (m ² · 24 hr) or less, it becomes possible to further suppress the intrusion of moisture. By sufficiently suppressing the intrusion of moisture, oxidation and deterioration of the electrode portion of the light emitting diode 61 connected by the bonding wire 7, a conductive resin having a similar function, or a metal film are prevented.

  On the other hand, the thickness of the sealing resin film 1 of the present invention is preferably 5 μm or more. As a result, moisture can be further prevented from entering, and the resin fluidity in the sealing resin layer 2 can be appropriately secured, so that the light emitting diode 61 and the bonding wire 7 are sufficiently sealed. In the sealing resin film 1, the thickness variation of each layer is desirably 3 μm or less. Thereby, the dispersion | variation in the light reflectivity by the sealing resin film 1 can be suppressed, and it is more preferable.

  Furthermore, the sealing resin film 1 for light emitting diodes of the present invention can be protected from dirt and scratches by applying protective films 5 on both sides. In addition, the protective film 5 can be wound into a roll while preventing the sealing resin layers 2 from adhering to each other or to the buffer layer 3 and the gas barrier layer 4. By making sealing resin film 1 into such a roll shape, conveyance, storage, and use of sealing resin film 1 become very easy.

  Further, in the present invention, as shown in FIGS. 5 and 6, a light transmissive substrate 82, a light emitting diode 61 formed on the light transmissive substrate 82, and the light emitting diode 61 of the light transmissive substrate 82. The sealing substrate 81 disposed so as to face the side, and the space between the light-transmitting substrate 82 and the sealing substrate 81 so as to cover the entire surface of the light emitting diode 61 of the present invention. A light emitting diode package 6 that is sealed with the sealing resin film 1 is also provided. In such a light emitting diode package 6, since it is not necessary to fill a liquid or highly fluid resin as a sealing material, the sealing operation becomes simple. In addition, there is no waste due to leakage of the sealing material, which is effective in reducing costs.

  In the light emitting diode package 6, the light transmissive substrate 82 may be made of a material that transmits visible light, and the material is not particularly limited. For example, it is appropriately selected from glass, resin, and the like. When a resin substrate is used as the light-transmitting substrate 82, it is preferable that the thickness of the substrate can be reduced if treatment for suppressing gas permeability is performed.

Further, as the sealing substrate 81 in such a light emitting diode package 6, a glass or metal thin film, a resin film, or the like is appropriately selected. In order not to break the sealing of the light emitting diode package 6, it is preferable to select the same material as the light transmissive substrate 82 having a linear expansion coefficient as the sealing substrate 81. Furthermore, in order to reduce the weight of the light emitting diode package 6, it is preferable to select a resin film with enhanced gas barrier performance. On the other hand, when heat generation from the light emitting diode 61 becomes a problem, a metal such as copper, aluminum, or iron having a good heat dissipation property may be installed on the sealing substrate 81 as a heat dissipation plate. Further, the sealing substrate 81 has a water vapor permeability of JIS K7129-2008B, 40 ° C./90 so that moisture in the usage environment of the light emitting diode package 6 does not directly contact the sealing resin layer 2. It may be 0.01 g / m ² · 24 hr or less under the condition of% RH.
Further, in such a light emitting diode package 6, a wavelength conversion material 62 (or a color filter) may be provided between the light transmissive substrate 82 and the light emitting diode 61. Thereby, it becomes possible to irradiate a desired color in a space-saving manner. Various materials can be used as the wavelength conversion material 62. For example, a resin in which phosphor particles are dispersed is preferably used. Alternatively, a color filter formed on the light transmissive substrate 82 by vapor deposition or the like may be used.

  Further, by providing the wavelength converting material 62 and the color filter with an adhesive force, the light emitting diode 61 can be fixed to the light-transmitting substrate 82, and there is no need to use an adhesive or the like separately. The workability is improved and the cost is reduced. For example, a material obtained by dispersing the phosphor particles in a silicone-based or epoxy-based resin can be used as the wavelength conversion material 62 having adhesiveness. The wavelength converting material 62 may be added to or applied to the light transmissive substrate 82.

  In the light emitting diode package 6 of the present invention, when the light emitting diode 61 and the bonding wire 7 are sealed with the sealing resin film 1, only the buffer layer of the sealing resin film 1 is contained as shown in FIG. The light-emitting diode 61 and the bonding wire 7 are embedded in the light-transmitting substrate 82, and only the buffer layer 3 of the sealing resin film 1 may be adhered to the light-transmitting substrate 82, or as shown in FIG. The resin film 1 may be sealed so as to wrap the light emitting diode 61 and the bonding wire 7, and the sealing resin layer 2 and the buffer layer 3 may be bonded to the light transmissive substrate 82. In the form in which the buffer layer 3 covers the entire surface of the light emitting diode and the sealing resin layer 2 further covers the entire surface as shown in FIG. 6, in particular, the light diffusibility can be controlled. In addition, when the hygroscopic light reflecting material 222 is used, it is possible to completely prevent the moisture intrusion route, and the moisture resistance of the package is improved.

  The light emitting diode package 6 of the present invention is manufactured by peeling off any of the protective films 5 on the sealing sheet 10 and bonding the sealing substrate 81 or the light transmissive substrate 82 on which the light emitting diode 61 is mounted. . Specifically, as shown in FIG. 7, the protective film 5 on the sealing resin layer 2 side of the sealing sheet 10 is first peeled off, and the sealing substrate 81 is bonded to the sealing resin layer 2 side. Next, the protective film 5 on the buffer layer 3 side is also peeled off, and the light-emitting diode 61 and the light-emitting diode 61 installed on the light-transmitting substrate 82 and the bonding wires 7 connecting the respective electrode portions of the light-transmitting substrate 82 are connected to the buffer layer. The method of pasting so that it may cover with 3 is illustrated.

  Alternatively, as shown in FIG. 8, the protective film 5 on the buffer layer 3 side of the sealing sheet 10 is first peeled off, and the light emitting diode 61 and the light emitting diode 61 and the light transmissive substrate placed on the light transmissive substrate 82 are removed. The bonding wires 7 connecting the respective electrode portions 82 are bonded so as to be covered with the buffer layer 3, and then the protective film 5 on the sealing resin layer 2 side is peeled off, and the sealing substrate 81 on the sealing resin layer 2 side. You may make it stick. 7 and 8, the sealing resin film 1d having the buffer layer 3 is used. However, the sealing resin film 1a having no buffer layer may be used for sealing the light emitting diode 61 as it is.

  The pasting process as described above is preferably performed under reduced pressure, in an inert gas, or in an inert gas under reduced pressure. Moreover, the resin 211 in the sealing resin layer 2 is reduced in viscosity by performing the bonding step in a heated state, and better bonding is achieved. However, if the sealing resin layer 2 becomes too fluid and the thickness is difficult to adjust under excessively high temperature conditions, or if the sealing resin layer contains a thermosetting resin, Problems such as deterioration of pastability are likely to occur. Therefore, when bonding is performed under heating, the temperature is preferably 40 to 150 ° C, more preferably 60 to 100 ° C.

  Next, in order to further clarify the effects of the present invention, examples and comparative examples will be described in detail, but the present invention is not limited to these examples.

[Preparation of sealing resin film]
The encapsulating resin varnish was prepared by mixing the raw materials in the following Table 1 and Table 2, adding 3 times by weight of methyl ethyl ketone (solvent) and stirring and mixing. In the comparative example, the sealing resin varnish after stirring and mixing was allowed to stand and the light reflecting material was allowed to settle, and then the light reflecting material was used in a non-uniform state to prepare a sealing resin film.

TiO ₂ (average particle size 1.0 μm) is used as the light reflecting material, and CaO (average particle size 1.3 μm), MgO (average particle size 1.5 μm), zeolite (average particle size) is used as the hygroscopic light reflecting material. A diameter of 2.0 μm) was used.
Polymer A represents an acrylate copolymer containing an epoxy group (epoxy value 0.2 eq / kg, molecular weight 800,000, Tg 10 ° C.), and polymer B is a acrylate ester copolymer containing a hydroxyl group. This represents a polymer (acid value 7 mg KOH / g, molecular weight 800,000, Tg-4 ° C.).
Furthermore, a liquid bisphenol A type epoxy resin having an epoxy equivalent of 180 to 200 and a phenol novolac resin having a hydroxyl equivalent of 110 to 140 were used as the oligomer, and imidazole was used as the reaction catalyst.

  The obtained sealing resin varnish was coated on the release sheet so that the thickness after drying was 20 μm, and dried at 110 ° C. for 3 minutes to prepare a sealing resin film. In the comparative example, as described above, the sealing resin varnish was stirred and mixed, and then allowed to stand, the light reflecting material was allowed to settle, and the light reflecting material concentration distribution was non-uniformly sealed manually. The resin varnish was sampled and a sealing resin film was produced by the same method. Furthermore, it was prepared manually using a bar coater one by one, and the thickness variation of the sealing resin layer was changed due to fluctuations in pressing pressure or the like. A protective film was bonded to both surfaces of the obtained sealing resin film to obtain a sealing sheet.

[Preparation of evaluation product]
First, the first glass plate was placed on a hot plate heated to 70 ° C. and sufficiently warmed. Next, the protective film on one side of the sealing sheet was peeled off, and the surface was fitted to a warmed glass plate and bonded while being pressed with a hard rubber roll. Furthermore, the protective film on the other surface of the sealing sheet bonded to the first glass plate is peeled off, and the second glass plate is overlaid on this surface, and a vacuum laminator (manufactured by Nichigo Morton, small pressure type) It was installed in a vacuum laminator model V130), pressure-bonded at 70 ° C., 0.2 MPa, 90 seconds, and post-cured at 120 ° C. for 2 hours to obtain a bonded product for evaluation.

[Evaluation]
1. Concentration variation of light reflecting substance About 10 mg of the sealing resin layer of the bonding product for evaluation was sampled with 10 samples, and the differential thermal-thermogravimetric simultaneous measurement device (TG-DTA200 manufactured by SII) was used up to 600 ° C to 5 ° C / The temperature was raised in min, and the variation in the amount of residue (% by weight) after the temperature was raised to 600 ° C. was measured.
2. Variation in sealing resin layer thickness Sample the cross section of the bonded product for evaluation at a sampling number of 10 and observe it with a scanning electron microscope (TM-1000, manufactured by Hitachi High-Tech) at a magnification of 4000 times. Values and minimum values were measured.

3. Particle size cumulative distribution measurement The encapsulating resin layer of the evaluation bonded product was placed in a crucible and completely burned at 500 ° C or lower. The obtained residue was measured with a particle size distribution meter (LA-920, manufactured by Horiba, Ltd.) using dry ethanol as a dispersion medium, and a cumulative fraction of 1 μm or less was determined.
4). Illuminance unevenness An A4 size evaluation paste was placed on a flat plate, and the unevenness of illumination was visually evaluated under a fluorescent lamp. All the pasted products had no illuminance unevenness ◎, 1-7 pieces judged to have unevenness △, more than 8 pieces judged to have unevenness × It was.

5. IR reflow test A paste for evaluation (10 × 10 cm) was treated in a thermostatic chamber of 60 ° C./60% RH for 40 hours according to JEDEC LEVEL 3, and then heated to 260 ° C. in an IR reflow oven. Then, the presence or absence of peeling of the sealing resin film in the obtained bonded product for evaluation was observed with an optical microscope. Of the 10 samples, the ones where peeling occurred were counted. The sample with 0 peeled samples was marked with ◎, the sample with 1-7 was marked with Δ, and the sample with 8 or more peeled was marked with ×.

〔result〕
Tables 1 and 2 show the results of the above evaluations on the evaluation bonded articles produced using the respective sealing resin varnishes.

From Table 1, in the sealing resin films for light emitting diodes (Examples 1 to 14) in which the variation in the concentration of the light reflecting material in the sealing resin layer is within ± 5%, no unevenness in illuminance is seen and uniform reflection is observed. Obtained. Further, from the reflow test, it was found that when the thickness variation of the sealing resin layer is small, no peeling was observed and a sealing resin film having high sealing performance was obtained. In particular, the sealing resin films (Examples 5 to 7, 10, and 13) containing a hygroscopic light reflecting material as the light reflecting material and having a particle size cumulative distribution of less than 1 μm of 90% or less have illuminance. Since it became uniform and no peeling was observed in the reflow test, a high sealing property was confirmed.

  On the other hand, from Table 2, in the case where the concentration variation of the light reflecting material in the sealing resin layer deviates from the range of ± 5% (Comparative Examples 1 to 6), the unevenness of illuminance becomes remarkable, and the peeling from the substrate also occurs. It became clear that it was likely to occur. Therefore, the result was not suitable as a light emitting diode encapsulating resin film.

  Further, when a hygroscopic light reflecting material is used as the light reflecting material in the sealing resin layer, when the cumulative particle size distribution of less than 1 μm exceeds 90% (Comparative Examples 5 to 6), the result of the reflow test As a result, it became clear that peeling from the substrate was likely to occur during use of the sealing resin film, and sufficient sealing performance could not be obtained.

  The preferred embodiments of the present invention have been described above with reference to the accompanying drawings, but the present invention is not limited to such examples. It will be apparent to those skilled in the art that various changes and modifications can be made within the scope of the technical idea disclosed in the present application, and these are naturally within the technical scope of the present invention. Understood.

DESCRIPTION OF SYMBOLS 1 ... Sealing resin film 10 ... Sealing sheet 11 ... Light emitting diode adhesion surface 2 ... Sealing resin layer 21 ... Sealing resin 211 ... Resin 221 ... Light reflecting substance 222 ... Hygroscopic light reflecting material 3 ... Buffer layer 4 ... Gas barrier layer 5 ... Protective film 6 ... Light emitting diode package 61 ... Light emitting diode 62 ... Wavelength converting material 7 ... -Bonding wire 81 ... Sealing substrate 82 ... Light transmissive substrate 90 ... Light emitting diode package (conventional product)
91 ... Light emitting diode 92 ... Sealing resin 93 ... Light transmissive substrate 94 ... Can 100 ... Light emitting diode package (conventional product)
DESCRIPTION OF SYMBOLS 101 ... Light emitting diode 102 ... Sealing resin 103 ... Light-transmitting substrate 104 ... Sealing substrate 105 ... Reflective layer 106 ... Wall

Claims (15)

In a light emitting diode package, a light emitting diode sealing resin film for sealing the entire surface of the light emitting diode,
Having a sealing resin layer made of a sealing resin containing at least a hygroscopic light reflecting substance in the resin;
Ri der concentration variation within 5% ± of the light reflective material in the sealing resin layer,
An encapsulating resin film for a light-emitting diode, wherein the hygroscopic light-reflecting material has a cumulative particle size distribution with a particle size of less than 1 μm of 90% or less .   The light reflecting material is at least one hygroscopic light reflecting material selected from the group consisting of barium oxide, calcium oxide, magnesium oxide, molecular sieve, zeolite, and silica gel. Sealing resin film.   The light reflecting material includes at least one light reflecting material selected from the group consisting of titanium oxide, zinc oxide, silicon dioxide, aluminum oxide, barium sulfate, zinc sulfide, and calcium carbonate, and barium oxide, calcium oxide, and oxidation. 2. The sealing resin film according to claim 1, comprising at least one hygroscopic light-reflecting material selected from the group consisting of magnesium, molecular sieve, zeolite, and silica gel. A light emitting diode bonding surface side of the sealing resin layer, a light reflecting material in a resin in any one of claims 1 to 3, characterized in that a buffer layer at a concentration of less than 0.01 wt% The sealing resin film as described. Wherein the opposite side of the light emitting diode bonding surface of the sealing resin layer, the sealing resin film according to claim 1 any one of 4, characterized in that it has a gas barrier layer. The sealing resin film according to claim 5 , wherein the water vapor permeability is 0.1 g / (m ² · 24 hr) or less. Sealing resin film according to any one of claims 1 to 6, the thickness is equal to or is 5μm or more. Sealing resin film according to any one of claims 1 to 7, the thickness variations in each layer is equal to or is 3μm or less. A light transmissive substrate;
A light emitting diode formed on the light transmissive substrate;
A sealing substrate disposed to face the light emitting diode side of the light transmissive substrate;
The sealing resin film according to any one of claims 1 to 8 , wherein the space between the light transmissive substrate and the sealing substrate is sealed so as to cover the entire surface of the light emitting diode.
A light emitting diode package comprising: The light emitting diode package according to claim 9 , wherein a wavelength conversion material or a color filter is provided between the light transmissive substrate and the light emitting diode. The light emitting diode package according to claim 10, wherein the wavelength conversion material or the color filter has an adhesive force, and fixes the light emitting diode to the light transmissive substrate. A light transmissive substrate;
A light emitting diode formed on the light transmissive substrate;
A sealing substrate disposed to face the light emitting diode side of the light transmissive substrate;
A sealing resin layer made of a sealing resin containing at least a light-reflecting substance in the resin is sealed between the light-transmitting substrate and the sealing substrate so as to cover the entire surface of the light-emitting diode. ,
The concentration variation of the light reflecting material in the sealing resin layer is within ± 5%.
A sealing resin film for a light-emitting diode ,
A light emitting diode package comprising: The light reflecting material is at least one light reflecting material selected from the group consisting of titanium oxide, zinc oxide, silicon dioxide, aluminum oxide, barium sulfate, zinc sulfide, and calcium carbonate. 13. The light emitting diode package according to 12 . The light emitting diode package according to claim 12 or 13 , wherein a wavelength conversion material or a color filter is provided between the light transmissive substrate and the light emitting diode. The light emitting diode package according to claim 12 , wherein the wavelength conversion material or the color filter has an adhesive force and fixes the light emitting diode to the light transmissive substrate.

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