JP6129283B2 - シリコン中空体の製造方法 - Google Patents
シリコン中空体の製造方法 Download PDFInfo
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- 229910052710 silicon Inorganic materials 0.000 title claims description 24
- 239000010703 silicon Substances 0.000 title claims description 24
- 238000004519 manufacturing process Methods 0.000 title claims description 18
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title description 21
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 28
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 27
- 239000000203 mixture Substances 0.000 claims description 23
- 238000006243 chemical reaction Methods 0.000 claims description 22
- 239000007787 solid Substances 0.000 claims description 22
- 238000000034 method Methods 0.000 claims description 21
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 19
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical group [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 17
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 14
- 229910017604 nitric acid Inorganic materials 0.000 claims description 14
- 229910000077 silane Inorganic materials 0.000 claims description 12
- 239000000080 wetting agent Substances 0.000 claims description 9
- 239000000919 ceramic Substances 0.000 claims description 6
- 239000007772 electrode material Substances 0.000 claims description 6
- 238000000197 pyrolysis Methods 0.000 claims description 6
- 210000004027 cell Anatomy 0.000 claims description 5
- 238000004146 energy storage Methods 0.000 claims description 5
- 239000011521 glass Substances 0.000 claims description 5
- 239000000126 substance Substances 0.000 claims description 5
- 238000001035 drying Methods 0.000 claims description 4
- 229910052736 halogen Inorganic materials 0.000 claims description 4
- 238000005406 washing Methods 0.000 claims description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 3
- 238000001704 evaporation Methods 0.000 claims description 3
- 239000010439 graphite Substances 0.000 claims description 3
- 229910002804 graphite Inorganic materials 0.000 claims description 3
- 230000006698 induction Effects 0.000 claims description 3
- 229920001296 polysiloxane Polymers 0.000 claims description 3
- 210000000352 storage cell Anatomy 0.000 claims description 3
- 238000004627 transmission electron microscopy Methods 0.000 claims description 3
- 239000011224 oxide ceramic Substances 0.000 claims description 2
- 229910052574 oxide ceramic Inorganic materials 0.000 claims description 2
- 125000005843 halogen group Chemical group 0.000 claims 1
- 239000007789 gas Substances 0.000 description 21
- 239000002245 particle Substances 0.000 description 13
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- HBBGRARXTFLTSG-UHFFFAOYSA-N Lithium ion Chemical compound [Li+] HBBGRARXTFLTSG-UHFFFAOYSA-N 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 229910001416 lithium ion Inorganic materials 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 239000011856 silicon-based particle Substances 0.000 description 4
- 239000002253 acid Substances 0.000 description 3
- 239000007795 chemical reaction product Substances 0.000 description 3
- 238000004821 distillation Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 238000001914 filtration Methods 0.000 description 3
- 150000002367 halogens Chemical class 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 239000002105 nanoparticle Substances 0.000 description 3
- 239000000047 product Substances 0.000 description 3
- 230000002123 temporal effect Effects 0.000 description 3
- 230000007704 transition Effects 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 150000007513 acids Chemical class 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 230000004907 flux Effects 0.000 description 2
- 230000001788 irregular Effects 0.000 description 2
- 239000008204 material by function Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 239000012498 ultrapure water Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- BPKGOZPBGXJDEP-UHFFFAOYSA-N [C].[Zn] Chemical compound [C].[Zn] BPKGOZPBGXJDEP-UHFFFAOYSA-N 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 229920002678 cellulose Polymers 0.000 description 1
- 239000001913 cellulose Substances 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 125000001309 chloro group Chemical group Cl* 0.000 description 1
- 238000002485 combustion reaction Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000007872 degassing Methods 0.000 description 1
- 210000001787 dendrite Anatomy 0.000 description 1
- 238000007865 diluting Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 239000012153 distilled water Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000003792 electrolyte Substances 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 239000003701 inert diluent Substances 0.000 description 1
- 238000009830 intercalation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000013528 metallic particle Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- -1 nitrogen-containing compound Chemical class 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000005424 photoluminescence Methods 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 229910021426 porous silicon Inorganic materials 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000008213 purified water Substances 0.000 description 1
- 150000004756 silanes Chemical class 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
- H10F77/147—Shapes of bodies
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/021—Preparation
- C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/021—Preparation
- C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
- C01B33/029—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition of monosilane
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/021—Preparation
- C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
- C01B33/03—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition of silicon halides or halosilanes or reduction thereof with hydrogen as the only reducing agent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M4/00—Electrodes
- H01M4/02—Electrodes composed of, or comprising, active material
- H01M4/36—Selection of substances as active materials, active masses, active liquids
- H01M4/38—Selection of substances as active materials, active masses, active liquids of elements or alloys
- H01M4/386—Silicon or alloys based on silicon
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/12—Active materials
- H10F77/122—Active materials comprising only Group IV materials
- H10F77/1228—Active materials comprising only Group IV materials porous silicon
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/01—Particle morphology depicted by an image
- C01P2004/04—Particle morphology depicted by an image obtained by TEM, STEM, STM or AFM
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/30—Particle morphology extending in three dimensions
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/30—Particle morphology extending in three dimensions
- C01P2004/32—Spheres
- C01P2004/34—Spheres hollow
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/50—Agglomerated particles
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/60—Particles characterised by their size
- C01P2004/61—Micrometer sized, i.e. from 1-100 micrometer
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/60—Particles characterised by their size
- C01P2004/62—Submicrometer sized, i.e. from 0.1-1 micrometer
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/60—Particles characterised by their size
- C01P2004/64—Nanometer sized, i.e. from 1-100 nanometer
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
- Y02E60/10—Energy storage using batteries
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- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Silicon Compounds (AREA)
- Sustainable Development (AREA)
- Life Sciences & Earth Sciences (AREA)
- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- General Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Engineering & Computer Science (AREA)
- Electromagnetism (AREA)
- Plasma & Fusion (AREA)
- Sustainable Energy (AREA)
Description
(a)非熱的プラズマを周波数fの交流電圧によって励起し、もしくはアークを動作させ、または前記ガス中に電磁エネルギーを、好ましくは赤外領域の電磁エネルギーを導入することで、結果生ずる相が得られ、その相を、
(b)湿潤剤中で分散させ、そして留去し、引き続き
(c)その蒸留物を、少なくとも一回、フッ酸、硝酸、水の少なくとも2種の物質からなる混合物と接触させることで、前記蒸留物と前記混合物との転化反応の消尽後にまたは終結後に、シリコンを含む外被を有する中空体を含有する固体残留物が得られる前記製造方法である。
モノシラン(SiH4)からなるガス中に、電磁的エネルギーを、約100Wの電力で、かつ当業者に公知の1150℃の温度に相当する約500nm〜4μmの波長領域において投入した。
実施例1と同様であるが、以下の点が異なっていた。
実施例1と同様であるが、以下の点で異なっていた。
実施例3と同様であるが、前記転化反応を45gの10%フッ酸の添加後に終結させずに、消尽されたという点で異なっていた。
1. シリコンを含む外被を有する中空体の製造方法であって、一般式SinH2n+2-mXm[式中、nは1〜4であり、mは0〜2n+2であり、かつXはハロゲンである]の少なくとも1種のシランを含むガス中で、
(a)非熱的プラズマを周波数fの交流電圧によって励起し、もしくはアークを動作させ、または前記ガス中に赤外領域の電磁エネルギーを導入することで、結果生ずる相が得られ、その相を、
(b)湿潤剤中で分散させ、そして留去し、引き続き
(c)その蒸留物を、少なくとも一回、フッ酸、硝酸、水の少なくとも2種の物質からなる混合物と接触させることで、前記蒸留物と前記混合物との転化反応の消尽後にまたは終結後に、シリコンを含む外被を有する中空体を含有する固体残留物が得られる前記製造方法。
2. ステップ(a)において、プラズマ反応器、誘導反応器、熱分解炉、またはアーク炉が使用され、前記反応器または炉の反応空間は、ガラス、酸化物セラミック、炭化物セラミックまたはグラファイトから作製されている、1に記載の方法。
3. ステップ(b)において、結果生ずる相は、まずガス抜きされ、引き続き水およびエタノールから選択される湿潤剤中に分散される、1に記載の方法。
4. ステップ(c)において、前記蒸留物は、まずは水と硝酸とからなる混合物と接触され、引き続きフッ酸と接触されて、転化反応が消尽された後に固体残留物が得られ、それを洗浄、濾過、および/または乾燥させる、1に記載の方法。
5. 前記固体残留物を洗浄、濾過、および/または乾燥させるか、または前記転化反応を、好ましくは水の添加によって終結させて、そして引き続き固体残留物を洗浄、濾過、および/または乾燥させる、1または4に記載の方法。
6. 1から5までのいずれかに記載の方法により得られた、シリコンを含む外被を有する中空体。
7. 前記シリコンを含む外被が、透過型電子顕微鏡法により測定されて5〜40nmの厚さを有する、6に記載の中空体。
8. 6または7に記載の中空体の、ソーラーセルの製造のための、またはエネルギー蓄積セルにおける電極材料の製造のための使用。
Claims (8)
- シリコンを含む外被を有する中空体の製造方法であって、一般式SinH2n+2-mXm[式中、nは1〜4であり、mは0〜2n+2であり、かつXはハロゲンである]の少なくとも1種のシランを含むガス中で、
(a)非熱的プラズマを周波数fの交流電圧によって励起し、もしくはアークを動作させ、または前記ガス中に赤外領域の電磁エネルギーを導入することで、結果生ずる相が得られ、その相を、
(b)湿潤剤中で分散させ、そして留去し、引き続き
(c)その蒸留物を、少なくとも一回、フッ酸、硝酸、水の少なくとも2種の物質からなる混合物と接触させることで、前記蒸留物と前記混合物との転化反応の消尽後にまたは終結後に、シリコンを含む外被を有する中空体を含有する固体残留物が得られる前記製造方法。 - ステップ(a)において、プラズマ反応器、誘導反応器、熱分解炉、またはアーク炉が使用され、前記反応器または炉の反応空間は、ガラス、酸化物セラミック、炭化物セラミックまたはグラファイトから作製されている、請求項1に記載の方法。
- ステップ(b)において、結果生ずる相は、まずガス抜きされ、引き続き水およびエタノールから選択される湿潤剤中に分散される、請求項1に記載の方法。
- ステップ(c)において、前記蒸留物は、まずは水と硝酸とからなる混合物と接触され、引き続きフッ酸と接触されて、転化反応が消尽された後に固体残留物が得られ、それを洗浄、濾過、および/または乾燥させる、請求項1に記載の方法。
- 前記固体残留物を洗浄、濾過、および/または乾燥させるか、または前記転化反応を終結させて、そして引き続き固体残留物を洗浄、濾過、および/または乾燥させる、請求項1または4に記載の方法。
- 前記転化反応を水の添加によって終結させる、請求項5に記載の方法。
- 前記シリコンを含む外被が、透過型電子顕微鏡法により測定されて5〜40nmの厚さを有する、請求項1から6までのいずれか1項に記載の方法。
- 請求項1から7までのいずれか1項に記載の方法により得られた中空体の、ソーラーセルの製造のための、またはエネルギー蓄積セルにおける電極材料の製造のための使用。
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP14195300.0 | 2014-11-28 | ||
| EP14195300.0A EP3026015A1 (de) | 2014-11-28 | 2014-11-28 | Verfahren zur herstellung von silicium hohlkörpern |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2016102057A JP2016102057A (ja) | 2016-06-02 |
| JP6129283B2 true JP6129283B2 (ja) | 2017-05-17 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2015230311A Active JP6129283B2 (ja) | 2014-11-28 | 2015-11-26 | シリコン中空体の製造方法 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US9831364B2 (ja) |
| EP (1) | EP3026015A1 (ja) |
| JP (1) | JP6129283B2 (ja) |
| KR (1) | KR101818820B1 (ja) |
| CN (1) | CN105645414B (ja) |
| CA (1) | CA2913549C (ja) |
| TW (1) | TWI596061B (ja) |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111769264B (zh) * | 2020-06-18 | 2022-06-07 | 合肥国轩高科动力能源有限公司 | 一种硅碳复合材料及其制备方法和应用 |
| KR102941688B1 (ko) | 2022-10-12 | 2026-03-19 | 경북대학교 산학협력단 | 락티카제이바실러스 파라카제이 nsmj15 및 nffj04, 라티락토바실러스 커바투스 nkj96 유산균의 가금류 장내미생물군집 조절 및 면역개선 효능 및 이의 용도 |
Family Cites Families (18)
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| JPH11349321A (ja) * | 1998-06-05 | 1999-12-21 | Osaka Gas Co Ltd | 機能性珪素材料の製法 |
| US7371666B2 (en) * | 2003-03-12 | 2008-05-13 | The Research Foundation Of State University Of New York | Process for producing luminescent silicon nanoparticles |
| DE102006059318A1 (de) | 2006-12-15 | 2008-06-19 | Evonik Degussa Gmbh | Poröses Silicium |
| EA201100571A1 (ru) | 2008-09-30 | 2011-10-31 | Эвоник Дегусса Гмбх | Получение кремния для солнечных батарей из диоксида кремния |
| KR101053836B1 (ko) * | 2009-02-10 | 2011-08-03 | 한국에너지기술연구원 | Icp를 이용한 실리콘 나노입자 제조 장치 |
| EP2322476A1 (de) | 2009-11-16 | 2011-05-18 | Evonik Degussa GmbH | Neues Verfahren zur Herstellung von Silicium |
| JPWO2012057253A1 (ja) * | 2010-10-27 | 2014-05-12 | 国立大学法人 東京大学 | 蛍光シリコンナノ粒子及びその製造方法 |
| JP2012130825A (ja) * | 2010-12-20 | 2012-07-12 | Kagawa Univ | ナノ粒子の製造方法、ナノ粒子およびナノ粒子製造装置 |
| US9617155B2 (en) | 2011-12-16 | 2017-04-11 | Evonik Degussa Gmbh | Production of trisilylamine from monochlorosilane and ammonia by use of inert solvent |
| DE102011088814A1 (de) | 2011-12-16 | 2013-06-20 | Evonik Industries Ag | Verfahren zur Herstellung von Trisilylamin aus Monochlorsilan und Ammoniak unter Verwendung von inertem Lösungsmittel |
| DE102012107348A1 (de) | 2012-08-09 | 2014-02-13 | Evonik Industries Ag | Verfahren zur Begrenzung der Belastung von Stromübertragungsnetzen |
| DE102012107347A1 (de) | 2012-08-09 | 2014-02-13 | Evonik Industries Ag | Verfahren zur Erlangung von einem kohlenwasserstoffhaltigen Gas |
| US20140341794A1 (en) | 2012-08-10 | 2014-11-20 | Evonik Industries Ag | Process for the coupled preparation of polysilazanes and trisilylamine |
| DE102012214290A1 (de) | 2012-08-10 | 2014-02-13 | Evonik Industries Ag | Verfahren zur gekoppelten Herstellung von Polysilazanen und Trisilylamin |
| DE102012023832A1 (de) | 2012-12-06 | 2014-06-12 | Evonik Industries Ag | Integrierte Anlage und Verfahren zum flexiblen Einsatz von Strom |
| DE102012023833A1 (de) | 2012-12-06 | 2014-06-12 | Evonik Industries Ag | Integrierte Anlage und Verfahren zum flexiblen Einsatz von Strom |
| KR101687055B1 (ko) * | 2013-05-16 | 2016-12-15 | 주식회사 엘지화학 | 중공형 실리콘계 입자, 이의 제조 방법, 및 이를 포함하는 리튬 이차 전지용 음극 활물질 |
| DE102013209802A1 (de) | 2013-05-27 | 2014-11-27 | Evonik Industries Ag | Verfahren zur gekoppelten Herstellung von Trisilylamin und Polysilazanen mit einer Molmasse bis 500 g/mol |
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| CN105645414B (zh) | 2017-11-03 |
| US20160155871A1 (en) | 2016-06-02 |
| TW201630811A (zh) | 2016-09-01 |
| TWI596061B (zh) | 2017-08-21 |
| EP3026015A1 (de) | 2016-06-01 |
| US9831364B2 (en) | 2017-11-28 |
| CN105645414A (zh) | 2016-06-08 |
| JP2016102057A (ja) | 2016-06-02 |
| CA2913549A1 (en) | 2016-05-28 |
| KR101818820B1 (ko) | 2018-01-15 |
| CA2913549C (en) | 2019-10-15 |
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