JP6131783B2 - Semiconductor device - Google Patents

Description

  The present invention relates to a semiconductor device including a sensor chip that detects a mechanical quantity based on a change in capacitance, and a circuit chip that performs signal processing on the sensor chip.

  Conventionally, a configuration of a semiconductor device including a plurality of semiconductor chips has been proposed in Patent Document 1, for example. Specifically, in Patent Document 1, each semiconductor chip has a pad for exchanging signals. And the pad formed in one semiconductor chip and the pad formed in the other semiconductor chip are electrically connected by a wire.

JP 2010-21210 A

  Here, a configuration in which a sensing unit that detects a mechanical quantity based on a change in capacitance is formed in one semiconductor chip and a circuit that performs signal processing on the sensing unit is formed in the other semiconductor chip is considered. It is done.

  In such a configuration, one wire for outputting a carrier wave signal for driving the sensing unit from one semiconductor chip to the other semiconductor chip is provided. Further, a configuration in which two wires for taking out a detection signal from the other semiconductor chip to one semiconductor chip is generally provided. Each semiconductor chip is also provided with a wire for exchanging other signals.

  In the configuration in which signals are exchanged using wires as described above, capacitance is also generated between the wires. In particular, in the above configuration, when the wire that transmits the carrier wave signal is the first wire and the two wires that transmit the detection signal are the second wire and the third wire, the second wire and the third wire sandwich the first wire. Wires are arranged. As a result, a first offset capacitor is formed by the first wire and the second wire, and a second offset capacitor is formed by the first wire and the third wire.

  When the difference between the first offset capacity and the second offset capacity is increased, an offset component based on the difference is included in the detection signal. Therefore, the absolute values of the first offset capacity and the second offset capacity are decreased. There is a need. For this reason, it is desired to ensure the pairing between a pair composed of the first wire and the second wire and a pair composed of the first wire and the third wire. Here, “pair property” refers to the length and shape of the wire, the distance from the first wire, and the like.

  On the other hand, since the capacitance decreases in inverse proportion to the distance, the first offset capacitance and the second offset capacitance can be reduced by disposing the second wire and the third wire away from the first wire. . For this reason, the offset component contained in the detection signal can be eliminated.

  However, there is a problem that the size of each semiconductor chip must be increased in order to ensure the distance between the second wire and the third wire with respect to the first wire. That is, if the second wire and the third wire are brought closer to the first wire in order to reduce the size of each semiconductor chip, the detection signal is likely to contain an offset component. Was difficult.

  In view of the above points, the present invention provides a sensor chip configured to detect a mechanical quantity based on a change in capacitance, and a circuit chip that performs signal processing on the sensor chip via a plurality of wires. An object of the present invention is to provide a semiconductor device capable of reducing the size of each chip in an electrically connected configuration.

  In order to achieve the above object, according to the first aspect of the present invention, the movable electrode (11c), the first fixed electrode (12b), and the second fixed electrode (13b) are provided. The first capacitance formed between the fixed electrode (12b) is output as a first capacitance signal, and the second capacitance formed between the movable electrode (11c) and the second fixed electrode (13b) is output as the first capacitance signal. A sensor chip (10) that outputs a two-capacity signal is provided.

  In addition, a carrier wave signal for driving the movable electrode (11c) is output to the sensor chip (10), while a first capacitance signal and a second capacitance signal are input from the sensor chip (10) to the movable electrode (11c). A circuit chip (20) is provided that acquires a mechanical quantity based on a differential capacitance change between the first capacitor and the second capacitor in accordance with the displacement of the movable electrode (11c) when the mechanical quantity is applied.

  In addition, the sensor chip (10) and the circuit chip (20) are electrically connected, and a first wire (30) for transmitting a first capacitance signal from the sensor chip (10) to the circuit chip (20), and the sensor chip (10) and the circuit chip (20) are electrically connected, and a second wire (31) for transmitting a second capacitance signal from the sensor chip (10) to the circuit chip (20), and the sensor chip (10) The circuit chip (20) is electrically connected and disposed between the first wire (30) and the second wire (31), and a carrier wave signal is transmitted from the circuit chip (20) to the movable electrode (11c). A third wire (32) for transmission.

Furthermore, a lower potential than the first wire (30) and the second wire (31) is applied from the circuit chip (20), and electric lines of force generated from the first wire (30) and the second wire (31). Low potential means (60) for receiving a part of the circuit chip (20). The low potential means is a pad (60) provided on one surface (21) of the circuit chip (20) .

  According to this, the electric lines of force emitted from the first wire (30) and the second wire (31) are not only the third wire (32) but also the low potential means (33, 34, 42, 50, 60, 70). Also distributed. In particular, since the low potential means (33, 34, 42, 50, 60, 70) has a lower potential than the first wire (30) and the second wire (31), the first wire (30) and the second wire ( The electric lines of force can easily be directed from 31) to the low potential means (33, 34, 42, 50, 60, 70). Thereby, the capacitance formed by the first wire (30) and the third wire (32) and the capacitance formed by the second wire (31) and the third wire (32) are absolute. Each value can be reduced. Accordingly, the distance between the first wire (30) and the second wire (31) with respect to the third wire (32) can be reduced, and the sensor chip (10) and the circuit chip (20) can be downsized. Can do.

  In addition, the code | symbol in the bracket | parenthesis of each means described in this column and the claim shows the correspondence with the specific means as described in embodiment mentioned later.

1 is a plan view of a semiconductor device according to a first embodiment of the present invention. It is a top view of the sensing part provided in the sensor chip. It is the schematic diagram which showed the electric lines of force based on a wire. It is sectional drawing of the semiconductor device which concerns on 2nd Embodiment of this invention. It is sectional drawing of the semiconductor device which concerns on 3rd Embodiment of this invention. It is sectional drawing of the semiconductor device which concerns on 4th Embodiment of this invention. It is sectional drawing of the semiconductor device which concerns on 5th Embodiment of this invention.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings. In the following embodiments, the same or equivalent parts are denoted by the same reference numerals in the drawings.

(First embodiment)
Hereinafter, a first embodiment of the present invention will be described with reference to the drawings. The semiconductor device according to the present embodiment is a capacitive sensor device that detects a mechanical quantity such as acceleration. As shown in FIG. 1, the semiconductor device includes a sensor chip 10, a circuit chip 20, a first wire 30, a second wire 31, a third wire 32, a fourth wire 33, and a fifth wire 34. ing.

The sensor chip 10 is configured to detect a mechanical quantity such as acceleration applied to the semiconductor device. The sensor chip 10 has a plate shape, and is configured as an SOI substrate in which a sacrificial layer is sandwiched between a support substrate and a semiconductor layer, for example. The support substrate and the semiconductor layer are made of, for example, single crystal silicon, and the sacrificial layer is made of, for example, SiO ₂ . The sensor chip 10 is fixed to the one surface 21 of the circuit chip 20 with an adhesive or the like on the support substrate side.

  The sacrificial layer in the SOI substrate is for forming a certain distance between the support substrate and the semiconductor layer. Further, as shown in FIG. 2, the semiconductor layer has a movable portion 11, a first fixed portion 12, and a second fixed portion 13. The movable portion 11, the first fixed portion 12, and the second fixed portion 13 are defined and separated by an opening (not shown) penetrating the semiconductor layer.

  The movable part 11 includes an anchor part 11a, a weight part 11b, a movable electrode 11c, and a beam part 11d. Among these, the anchor part 11a is for floating and supporting the weight part 11b with respect to the support substrate. The anchor portion 11a has a block shape and is provided at two locations on the sacrificial layer.

  The weight portion 11b functions as a weight that moves the movable electrode 11c relative to each anchor portion 11a when a mechanical quantity such as acceleration is applied to the semiconductor device, and has an elongated shape. A plurality of etching holes 11e are formed in the weight portion 11b. This etching hole 11e is used as an introduction hole for an etching medium when removing the sacrificial layer between the weight portion 11b and the support substrate.

  The movable electrode 11c extends in a perpendicular direction from the elongated portion constituting the weight portion 11b, and is arranged in a comb shape by providing a plurality of movable electrodes 11c. The interval between the movable electrodes 11c is a constant interval, and the width and length of each movable electrode 11c are also constant.

  The beam portion 11d connects the anchor portion 11a and the weight portion 11b. The beam portion 11d has a rectangular frame shape in which two parallel beams are connected at both ends thereof, and has a spring function of being displaced in a direction perpendicular to the longitudinal direction of the two beams. The weight portion 11b is integrally connected to and supported by the anchor portion 11a by the beam portion 11d. In the present embodiment, the two beam portions 11d connect the anchor portion 11a and the weight portion 11b, respectively.

  Then, the sacrificial layer below the beam portion 11d, the weight portion 11b, and the movable electrode 11c is partially removed, and the beam portion 11d, the weight portion 11b, and the movable electrode 11c float on the support substrate at regular intervals. It is in a state. This constant interval is an interval between the semiconductor layer and the support substrate and corresponds to the thickness of the sacrificial layer.

  On the other hand, the first fixed part 12 and the second fixed part 13 are arranged so as to face the long sides of the elongated weight part 11 b constituting the movable part 11. Therefore, the 1st fixing | fixed part 12 and the 2nd fixing | fixed part 13 are arrange | positioned so that the weight part 11b may be pinched | interposed. The first fixing portion 12 has a first wiring portion 12a and a first fixed electrode 12b, and the second fixing portion 13 has a second wiring portion 13a and a second fixed electrode 13b.

  Each wiring part 12a, 13a is a part which functions as wiring for electrically connecting each fixed electrode 12b, 13b and the outside. A sacrificial layer is left below each wiring part 12a, 13a, and each wiring part 12a, 13a is fixed to the support substrate via the sacrificial layer.

  Each of the fixed electrodes 12b and 13b extends in a direction perpendicular to the side of the wiring portions 12a and 13a that faces the weight portion 11b, and a plurality of each of the wiring portions 12a and 13a is provided in a comb shape. Has been placed. The intervals between the first fixed electrodes 12b are constant, and the widths and lengths of the first fixed electrodes 12b are also constant. The same applies to the second fixed electrode 13b.

  Each wiring part 12a, 13a is formed on a sacrificial layer, and is fixed to the support substrate via the sacrificial layer. On the other hand, the sacrificial layer between each fixed electrode 12b, 13b and the support substrate is removed, and each fixed electrode 12b, 13b is in a floating state with respect to the support substrate.

  And each fixed electrode 12b, 13b is opposingly arranged by the movable electrode 11c, and the capacitor | condenser is formed between each fixed electrode 12b, 13b and the movable electrode 11c. That is, the movable part 11 and the fixed parts 12 and 13 constitute a sensing part 14 for detecting a mechanical quantity such as acceleration based on the capacitance formed between the movable electrode 11c and the fixed electrodes 12b and 13b. doing. Therefore, when acceleration or the like is applied in the plane direction of the support substrate and in the longitudinal direction of the weight portion 11b, the acceleration or the like can be detected based on the change in the capacitance value of the capacitor. .

  The sensor chip 10 outputs the first capacitance formed between the movable electrode 11c and the first fixed electrode 12b from the first fixed portion 12 as a first capacitance signal. Further, the sensor chip 10 outputs the second capacitance formed between the movable electrode 11c and the second fixed electrode 13b from the second fixed portion 13 as a second capacitance signal.

  The semiconductor layer has a structure (not shown) in addition to the movable part 11 and the fixed parts 12 and 13 described above. Further, as shown in FIG. 1, the sensor chip 10 has a plurality of pads 15 formed in the semiconductor layer. Each pad 15 is provided corresponding to each wire 30-34. For example, the pad 15 is formed on the anchor part 11a of the movable part 11 and the wiring parts 12a and 13a.

  The circuit chip 20 includes a control circuit unit having a function of exchanging signals with the sensor chip 10 and a function of calculating and amplifying a signal acquired from the sensor chip 10 and outputting the signal to the outside. It is a thing. The circuit chip 20 is a semiconductor chip in which, for example, a CMOS transistor or the like is formed by a semiconductor process on a silicon substrate or the like.

  The one surface 21 of the circuit chip 20 is formed in a size larger than the planar size of the sensor chip 10. Further, the circuit chip 20 has a plurality of pads 22. Each pad 22 is provided corresponding to each wire 30-34.

  The circuit chip 20 has a function of outputting a carrier wave signal for driving the movable electrode 11 c to the movable part 11 of the sensor chip 10. Thereby, the weight part 11b of the movable part 11 vibrates at a predetermined frequency. Further, the circuit chip 20 receives the first capacitance signal and the second capacitance signal from the sensor chip 10. As a result, the circuit chip 20 acquires the mechanical quantity based on the differential capacitance change between the first capacitor and the second capacitor accompanying the displacement of the movable electrode 11c when the mechanical quantity is applied to the movable electrode 11c. .

  Specifically, since the carrier wave has a phase difference of 180 °, the movable electrode 11c, which is a common electrode of the first capacitor (C1) and the second capacitor (C2), is proportional to C1-C2 and the carrier wave. A charge amount proportional to the amplitude is accumulated. That is, the differential change of C1-C2 is due to the displacement of the movable electrode 11c, and is proportional to a mechanical quantity such as acceleration. Therefore, by detecting this change in the amount of charge, it is possible to detect a change in capacitance = a change in mechanical quantity.

  The first wire 30 is a wiring component that electrically connects the first wiring portion 12 a of the sensor chip 10 and the circuit chip 20. That is, the first wire 30 plays a role of transmitting a first capacitance signal from the first wiring portion 12 a of the sensor chip 10 to the circuit chip 20.

  The second wire 31 is a wiring component that electrically connects the second wiring portion 13 a of the sensor chip 10 and the circuit chip 20. That is, the second wire 31 plays a role of transmitting a second capacitance signal from the second wiring portion 13a of the sensor chip 10 to the circuit chip 20.

  The third wire 32 is a wiring component that electrically connects the movable portion 11 of the sensor chip 10 and the circuit chip 20. The third wire 32 is disposed between the first wire 30 and the second wire 31, and plays a role of transmitting a carrier wave signal from the circuit chip 20 to the movable electrode 11c.

  The fourth wire 33 is a wiring component that electrically connects the sensor chip 10 and the circuit chip 20. The fourth wire 33 is located on the opposite side of the first wire 30 from the third wire 32. The fifth wire 34 is a wiring component that electrically connects the sensor chip 10 and the circuit chip 20. The fifth wire 34 is located on the opposite side of the second wire 31 from the third wire 32.

  The fourth wire 33 and the fifth wire 34 function as low potential means that receives a part of the lines of electric force emitted from the first wire 30 and the second wire 31. For this reason, the fourth wire 33 and the fifth wire 34 are given a lower potential than the first wire 30 and the second wire 31 from the control circuit unit of the circuit chip 20.

  Further, the five wires 30 to 34 are wire-bonded to the pads 15 and 22 of the sensor chip 10 and the circuit chip 20 so as to ensure the pair properties such as the length, shape, and distance between the adjacent wires. The above is the overall configuration of the semiconductor device according to the present embodiment.

  Next, the effect obtained by providing the fourth wire 33 and the fifth wire 34 in the semiconductor device will be described. As described above, in the present embodiment, the sensor chip 10 and the circuit chip 20 are electrically connected by the five wires 30 to 34. For this reason, as shown in FIG. 3A, the electric lines of force emitted from the first wire 30 are connected to the third wire 32. That is, the first wire 30 forms a capacitance with the third wire 32. Similarly, the second wire 31 forms a capacitance with the third wire 32.

  However, in the present embodiment, the fourth wire 33 is provided outside the first wire 30 and the fifth wire 34 is provided outside the second wire 31. According to this, as shown in FIG. 3B, the electric lines of force emitted from the first wire 30 are distributed not only to the third wire 32 but also to the fourth wire 33. Similarly, the electric lines of force generated from the second wire 31 are distributed not only to the third wire 32 but also to the fifth wire 34.

  In addition, a voltage is applied to the fourth wire 33 and the fifth wire 34 so as to be at a lower potential than the first wire 30 and the second wire 31 by the control circuit unit of the circuit chip 20. For this reason, it is possible to easily make the lines of electric force from the first wire 30 to the fourth wire 33 and to make the lines of electric force easily move from the second wire 31 to the fifth wire 34.

  Since the lines of electric force are thus dispersed, the capacitance formed by the first wire 30 and the third wire 32 and the capacitance formed by the second wire 31 and the third wire 32 are reduced. Each absolute value can be reduced. That is, the offset component included in the first capacitance signal and the second capacitance signal can be reduced. For this reason, the distance of the 1st wire 30 and the 2nd wire 31 with respect to the 3rd wire 32 can be made small. Therefore, the sensor chip 10 and the circuit chip 20 can be reduced in size.

  In the present embodiment, the fourth wire 33 is located outside the first wire 30 and the fifth wire 34 is located outside the second wire 31. For this reason, the 4th wire 33 and the 5th wire 34 can protect the 1st wire 30 and the 2nd wire 31 from a foreign substance etc. Therefore, the robustness against foreign matter or the like in the semiconductor device can be improved.

  Regarding the correspondence between the description of the present embodiment and the description of the claims, the fourth wire 33 and the fifth wire 34 correspond to “low potential means” of the claims.

(Second Embodiment)
In the present embodiment, parts different from the first embodiment will be described. As shown in FIG. 4, in this embodiment, the semiconductor device includes a sensor chip 10, a circuit chip 20, a first wire 30, a second wire 31, a third wire 32, and a package unit 40. Yes. The configurations of the circuit chip 20, the first wire 30, the second wire 31, and the third wire 32 are the same as those in the first embodiment. In FIG. 4, the pads 15 and 22 are omitted.

  The package unit 40 is a housing component that houses the sensor chip 10 and the circuit chip 20. The package part 40 is formed, for example with resin, ceramics, etc. In addition, the package part 40 has a conductor part 42 exposed on the inner wall surface 41 of the package part 40.

  The conductor portion 42 is formed, for example, in a pad shape in a portion of the inner wall surface 41 that faces the first wire 30 and the second wire 31, and is electrically connected to the control circuit portion of the circuit chip 20 by a wiring (not shown). ing. Thereby, the conductor part 42 is given a lower potential than the first wire 30 and the second wire 31 by the control circuit part of the circuit chip 20.

  According to said structure, since the electric force line emitted from the 1st wire 30 and the 2nd wire 31 goes to the planar conductor part 42, the said electric force line can be disperse | distributed more. For the correspondence between the description of the present embodiment and the description of the claims, the conductor portion 42 corresponds to the “low potential means” of the claims.

(Third embodiment)
In the present embodiment, parts different from the first and second embodiments will be described. As shown in FIG. 5, in this embodiment, the semiconductor device includes a sensor chip 10, a circuit chip 20, a first wire 30, a second wire 31, a third wire 32, and a conductive adhesive 50. Has been.

  The sensor chip 10 is mounted on one surface 21 of the circuit chip 20 via a conductive adhesive 50. The conductive adhesive 50 is, for example, a silver paste. The conductive adhesive 50 is electrically connected to the control circuit portion of the circuit chip 20 by wiring (not shown). The conductive adhesive 50 is given a lower potential than the first wire 30 and the second wire 31 by the control circuit unit of the circuit chip 20.

  With the above configuration, the electric lines of force generated from the first wire 30 and the second wire 31 can be dispersed in the conductive adhesive 50. When the conductive adhesive 50 is formed up to a region facing the first wire 30 and the second wire 31, the electric lines of force can be further dispersed. For the correspondence between the description of the present embodiment and the description of the claims, the conductive adhesive 50 corresponds to the “low potential means” of the claims.

(Fourth embodiment)
In the present embodiment, parts different from the first to third embodiments will be described. As shown in FIG. 6, in this embodiment, the semiconductor device includes a sensor chip 10, a circuit chip 20, a first wire 30, a second wire 31, a third wire 32, and a pad 60. .

  The pad 60 is provided in a region corresponding to the first wire 30 and the second wire 31 on the one surface 21 of the circuit chip 20. The pad 60 is electrically connected to the control circuit unit of the circuit chip 20 by a wiring (not shown), and a potential lower than that of the first wire 30 and the second wire 31 is given by the control circuit unit of the circuit chip 20. .

  With the above configuration, electric lines of force generated from the first wire 30 and the second wire 31 can be dispersed in the pad 60. As for the correspondence between the description of the present embodiment and the description of the claims, the pad 60 corresponds to “low potential means” of the claims.

(Fifth embodiment)
In the present embodiment, parts different from the first to fourth embodiments will be described. As shown in FIG. 7, in this embodiment, the semiconductor device includes a sensor chip 10, a circuit chip 20, a first wire 30, a second wire 31, and a third wire 32.

  In the present embodiment, the sensor chip 10 is plate-shaped and has a side surface 18 connected to the front surface 16 and the back surface 17. Further, the sensor chip 10 is mounted with the back surface 17 side facing the one surface 21 of the circuit chip 20.

  Further, the sensor chip 10 has a metal film 70 provided on the side surface 18. The metal film 70 is electrically connected to a wiring or the like (not shown) provided on the one surface 21 of the circuit chip 20. Thereby, the metal film 70 is electrically connected to the control circuit unit of the circuit chip 20 and is given a lower potential than the first wire 30 and the second wire 31 by the control circuit unit of the circuit chip 20.

  With the above configuration, electric lines of force generated from the first wire 30 and the second wire 31 can be dispersed in the metal film 70. As for the correspondence between the description of the present embodiment and the description of the claims, the metal film 70 corresponds to the “low potential means” of the claims.

(Other embodiments)
The configurations of the semiconductor devices described in the above embodiments are examples, and the present invention is not limited to the configurations described above, and other configurations that can realize the present invention may be employed. For example, the sensor chip 10 may detect an angular velocity or pressure in addition to acceleration as a mechanical quantity. Moreover, the structure of the movable part 11 and each fixed part 12 and 13 shown by FIG. 2 is an example, and another structure may be sufficient as it.

  In the second embodiment, the sensor chip 10 is fixed on the circuit chip 20, but the sensor chip 10 and the circuit chip 20 may be arranged side by side. Moreover, although the package part 40 is configured to include the conductor part 42, the entire package part 40 may be the conductor part 42. Thus, the package part 40 should just have the conductor part 42 for disperse | distributing a line of electric force to the position which opposes the 1st wire 30 and the 2nd wire 31 at least. As the area of the conductor portion 42 is larger, the electric lines of force emitted from the first wire 30 and the second wire 31 can be dispersed. The configuration of the package unit 40 may be, for example, a ceramic structure or a structure having a metal lid in part. Of course, the conductor portion 42 may be provided on the entire inner wall surface 41 of the package portion 40.

  In the fifth embodiment, the metal film 70 is electrically connected to the wiring (not shown) of the circuit chip 20. However, for example, the metal film 70 is connected to the control circuit unit of the circuit chip 20 via the wiring (not shown) provided on the sensor chip 10. It may be electrically connected.

  In each of the above embodiments, the sensor chip 10 is configured based on the SOI substrate, but this is an example. Therefore, the sensor chip 10 may be configured by another substrate instead of the SOI substrate.

DESCRIPTION OF SYMBOLS 10 Sensor chip 11c Movable electrode 12b 1st fixed electrode 13b 2nd fixed electrode 20 Circuit chip 30 1st wire 31 2nd wire 32 3rd wire 33 4th wire (low electric potential means)
34 5th wire (low potential means)

Claims (1)

The movable electrode (11c), the first fixed electrode (12b), and the second fixed electrode (13b) have a first electrode formed between the movable electrode (11c) and the first fixed electrode (12b). A sensor chip (10) for outputting a capacitance as a first capacitance signal and outputting a second capacitance formed between the movable electrode (11c) and the second fixed electrode (13b) as a second capacitance signal; ,
While outputting the carrier wave signal for driving the movable electrode (11c) to the sensor chip (10), the first capacitance signal and the second capacitance signal are input from the sensor chip (10), and the movable electrode A circuit chip that acquires the mechanical quantity based on a differential capacitance change between the first capacitor and the second capacitor in accordance with the displacement of the movable electrode (11c) when the mechanical quantity is applied to (11c). 20)
A first wire (30) for electrically connecting the sensor chip (10) and the circuit chip (20) and transmitting the first capacitance signal from the sensor chip (10) to the circuit chip (20); ,
A second wire (31) for electrically connecting the sensor chip (10) and the circuit chip (20) and transmitting the second capacitance signal from the sensor chip (10) to the circuit chip (20); ,
The sensor chip (10) and the circuit chip (20) are electrically connected and disposed between the first wire (30) and the second wire (31), and the circuit chip (20 ) From the third wire (32) for transmitting the carrier signal to the movable electrode (11c);
The circuit chip (20) is applied with a lower potential than the first wire (30) and the second wire (31) and is emitted from the first wire (30) and the second wire (31). Low potential means (60) for receiving a portion of the electric field lines;
Equipped with a,
The semiconductor device according to claim 1, wherein the low potential means is a pad (60) provided on one surface (21) of the circuit chip (20) .

Images