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JP6135082B2 - Induction heating furnace - Google Patents
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JP6135082B2 - Induction heating furnace - Google Patents

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JP6135082B2
JP6135082B2 JP2012213353A JP2012213353A JP6135082B2 JP 6135082 B2 JP6135082 B2 JP 6135082B2 JP 2012213353 A JP2012213353 A JP 2012213353A JP 2012213353 A JP2012213353 A JP 2012213353A JP 6135082 B2 JP6135082 B2 JP 6135082B2
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slit
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JP2014067652A (en
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津田 正徳
正徳 津田
中井 泰弘
泰弘 中井
悠 米虫
悠 米虫
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Sinfonia Technology Co Ltd
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Description

本発明は、加熱室内に配置した加熱対象物を加熱する誘導加熱炉に関するものである。   The present invention relates to an induction heating furnace that heats a heating object disposed in a heating chamber.

近時、優れた物理的・化学的性質を有することからシリコン(Si)半導体を凌駕する小型・低損失の半導体デバイスの実現が可能とされるデバイスとして炭化ケイ素(SiC)半導体が注目されている。   Recently, silicon carbide (SiC) semiconductors have attracted attention as devices that can realize small and low-loss semiconductor devices that surpass silicon (Si) semiconductors due to their excellent physical and chemical properties. .

このSiC半導体デバイス(以下、「SiC半導体」と称する場合がある)の作製に用いられるエピタキシャルウェハの品質が十分でない場合には、所定面積を有するチップ、特に大面積チップの作製が困難であり、SiCの材料特性の有用性が発揮される大電流デバイスの実用化に大きな障壁となり得る。   When the quality of the epitaxial wafer used for the production of this SiC semiconductor device (hereinafter sometimes referred to as “SiC semiconductor”) is not sufficient, it is difficult to produce a chip having a predetermined area, particularly a large area chip, This can be a significant barrier to the practical application of high-current devices that demonstrate the usefulness of the material properties of SiC.

ここで、エピタキシャルウェハは、高品質なウェハの表面上に厚み及び不純物濃度を精密に制御した単結晶SiC薄膜(SiCエピ膜とも称されるものであり、以下では、「SiC薄膜」と称する場合がある)を堆積して作製されるものであり、大型(大口径)のウェハ上への高品質且つ均一なエピタキシャル成長技術が必要となる。   Here, the epitaxial wafer is a single crystal SiC thin film (also referred to as a SiC epitaxial film) whose thickness and impurity concentration are precisely controlled on the surface of a high-quality wafer. A high quality and uniform epitaxial growth technique on a large (large diameter) wafer is required.

ウェハ上にSiC薄膜を形成する方法として、作成過程で化学反応を利用するCVD(Chemical
Vapor Deposition・化学気相成長)法が採用されており、これに用いるエピキシャル装置も開発されている(例えば特許文献1)。
As a method of forming a SiC thin film on a wafer, CVD (Chemical
Vapor Deposition (Chemical Vapor Deposition) method has been adopted, and an epitaxy apparatus used for this method has been developed (for example, Patent Document 1).

特許文献1には、一定の厚さを有する石英チューブを主体としてなるエピタキシャル成長室本体と、エピタキシャル成長室本体の外壁周辺部に螺旋状に配置されるコイルと、導電性素材から構成され且つエピタキシャル成長室本体の内側に設けられた円筒状の断熱材と、断熱材よりも内側に配置される黒鉛からなる筒状の第1サセプタと、第1サセプタの内側に配置される黒鉛からなる筒状の第2サセプタとを備え、第2サセプタの内部にSiCウェハを配置可能に構成されたCVDエピタキシャル装置が開示されている。   Patent Document 1 discloses an epitaxial growth chamber main body mainly composed of a quartz tube having a constant thickness, a coil disposed in a spiral shape around the outer wall of the epitaxial growth chamber main body, and an epitaxial growth chamber main body that is made of a conductive material. A cylindrical heat insulating material provided inside the tube, a cylindrical first susceptor made of graphite arranged inside the heat insulating material, and a cylindrical second material made of graphite arranged inside the first susceptor. There has been disclosed a CVD epitaxial apparatus including a susceptor and configured to be capable of disposing a SiC wafer inside a second susceptor.

このCVDエピタキシャル装置では、コイルに電流を流して高周波を発生させることで第1サセプタが直接加熱され、この第1サセプタの加熱(第1サセプタからの熱伝導及び輻射)によって第2サセプタが間接的に加熱されることで、第2サセプタ内のウェハ上にSiC薄膜を形成するエピタキシャル成長を実現している。   In this CVD epitaxial apparatus, the first susceptor is directly heated by causing a current to flow through the coil to generate a high frequency, and the second susceptor is indirectly heated by heating the first susceptor (heat conduction and radiation from the first susceptor). By being heated, the epitaxial growth for forming the SiC thin film on the wafer in the second susceptor is realized.

すなわち、内部に収容した加熱対象物であるSiCウェハを加熱収容する第2サセプタが加熱室として機能し、発熱することで加熱室を加熱する第1サセプタが発熱体として機能している。   That is, the second susceptor that heats and accommodates the SiC wafer that is the object to be heated accommodated therein functions as a heating chamber, and the first susceptor that heats the heating chamber by generating heat functions as a heating element.

一方、本出願人は、例えば炉体の内部に金属材料を収容し、炉体の外側に巻回された誘導加熱コイルを加熱することにより、炉体内の金属材料を加熱溶解する誘導加熱炉を開発し、これまでに特許出願を行っている(例えば特許文献2)。ここで「炉体」は金属材料を加熱する加熱室として機能する。   On the other hand, the present applicant, for example, includes an induction heating furnace that heats and melts the metal material in the furnace body by housing the metal material inside the furnace body and heating the induction heating coil wound around the outside of the furnace body. It has been developed and patent applications have been filed so far (for example, Patent Document 2). Here, the “furnace body” functions as a heating chamber for heating the metal material.

本出願人は、誘導加熱炉に関する技術をエピタキシャル装置に応用して、加熱室内のウェハ上にSiC薄膜を形成させるエピタキシャル成長を実現すべく、検討を重ねてきた。   The present applicant has repeatedly studied to realize epitaxial growth in which a SiC thin film is formed on a wafer in a heating chamber by applying a technique related to an induction heating furnace to an epitaxial apparatus.

特開2005−109408号公報JP 2005-109408 A 特開2010−17749号公報JP 2010-17749 A

ところで、上述の特許文献1では、第1サセプタの外側に導電性素材から構成された断熱材を配置し、サセプタから放出される熱が装置外へ漏れないように断熱材で断熱する構成が開示されているが、断熱材自体の発熱について一切言及されていない。   By the way, in above-mentioned patent document 1, the structure which arrange | positions the heat insulating material comprised from the electroconductive raw material on the outer side of a 1st susceptor, and insulates with the heat insulating material so that the heat discharge | released from a susceptor may not leak out of an apparatus is disclosed. However, no mention is made of the heat generation of the insulation itself.

ここで、断熱材を構成する素材の選択肢は、それ自体の耐熱温度により制限がある。つまり、ウェハ上にエピタキシャル成長によってSiC薄膜を堆積させるエピタキシャル装置では、通常1800℃を越す温度で高速成長させるため、断熱材にもこのような高温下での使用に耐え得る耐熱性が要求される。このような耐熱性の条件を満たす断熱材としては、カーボン繊維製のフェルトで構成されたカーボンフェルトを挙げることができる。   Here, the choice of the material which comprises a heat insulating material has a restriction | limiting by the heat-resistant temperature of itself. That is, in an epitaxial apparatus in which a SiC thin film is deposited on a wafer by epitaxial growth, high-temperature growth is usually performed at a temperature exceeding 1800 ° C. Therefore, the heat insulating material is required to have heat resistance that can withstand use at such a high temperature. An example of a heat insulating material that satisfies such heat resistance is a carbon felt made of carbon fiber felt.

カーボンフェルトの固有抵抗は、5〜20×10−3[Ω・m]であり、黒鉛からなる発熱体(サセプタ)の固有抵抗に比べて十分に大きい。このような素材からなる断熱材自体の発熱について特許文献1では言及されていないことから、同文献に開示された技術では、固有抵抗が発熱体よりも十分に大きい断熱材は導電体(発熱抵抗体)として全く考慮されていなかったと推察できる。 The specific resistance of carbon felt is 5 to 20 × 10 −3 [Ω · m], which is sufficiently larger than the specific resistance of a heating element (susceptor) made of graphite. Since the heat generation of the heat insulating material itself made of such a material is not mentioned in Patent Document 1, in the technique disclosed in the same document, the heat insulating material whose specific resistance is sufficiently larger than that of the heat generating body is a conductor (heating resistance). It can be inferred that it was not considered at all.

しかしながら、本発明者は、鋭意研究の結果、所定温度まで昇温する過程において、カーボンフェルトからなる導電性の断熱材が一時的に黒鉛製の発熱体より非常に高い温度になる局所的過熱現象が発生する適宜の実験装置を用いた温度シュミレーションにて確認した。このような断熱材の局所的過熱現象は、1800℃程度の高温の平衡状態時には顕著に表われず、このことがこれまでのエピキシャル装置において昇温過程で断熱材が局所的過熱状態になっていることに気付かれなかった理由であると考えられる。   However, as a result of intensive research, the inventor has found that the local heat-up phenomenon in which the conductive heat insulating material made of carbon felt temporarily becomes much higher than the heating element made of graphite in the process of raising the temperature to a predetermined temperature. This was confirmed by temperature simulation using an appropriate experimental apparatus. Such a local overheating phenomenon of the heat insulating material does not appear remarkably in an equilibrium state at a high temperature of about 1800 ° C., and this causes the heat insulating material to be in a local overheating state during the temperature rising process in the conventional epitaxial apparatus. It is thought that this is the reason why he did not notice that he was.

しかし、高温の平衡状態に至るためには回避できない昇温過程において、一時的にとはいえ断熱材の局所的過熱によって黒鉛製である発熱体自体の蒸発が起こる事態は防止・抑制すべきであり、断熱材の外側に配置している構成材(特許文献1であれば石英チューブを主体としてなる真空容器)の耐熱に関しても適切な措置を講じなければらならいことは言うまでもない。ここで、発熱体を形成する素材は、加熱処理時の最高温度よりも融点が高い高融点金属材料であることが要求され、黒鉛以外の高融点金属材料から発熱体を形成した態様であっても、高融点金属材料よりも固有抵抗が大きい素材で断熱材を形成している場合には、昇温過程のおいて断熱材の局所的過熱現象が生じる。   However, in the temperature rise process that cannot be avoided to reach a high temperature equilibrium state, it is necessary to prevent or suppress the occurrence of evaporation of the heating element itself made of graphite due to local overheating of the heat insulating material, albeit temporarily. In addition, it goes without saying that appropriate measures must be taken with respect to the heat resistance of the constituent material arranged outside the heat insulating material (in the case of Patent Document 1, a vacuum vessel mainly composed of a quartz tube). Here, the material forming the heating element is required to be a refractory metal material having a melting point higher than the maximum temperature during heat treatment, and the heating element is formed from a refractory metal material other than graphite. However, when the heat insulating material is formed of a material having a specific resistance higher than that of the refractory metal material, a local overheating phenomenon of the heat insulating material occurs in the temperature rising process.

なお、所定の高温にまで昇温させる速度を比較的遅く設定すれば、断熱材の局所的過熱を抑制することが可能であると考えられるが、昇温速度を所定速度以下に制限することは所定の高温にまで昇温させる昇温時間の短縮化を阻害する要因となり、生産効率の悪化を招来し得る。   It should be noted that if the rate of temperature increase to a predetermined high temperature is set relatively slow, it is considered possible to suppress local overheating of the heat insulating material, but limiting the temperature increase rate to a predetermined rate or less This may be a factor that hinders the shortening of the temperature raising time for raising the temperature to a predetermined high temperature, which may lead to deterioration in production efficiency.

本発明は、これまでに気付かれずに着目されることがなかった問題点を初めて見出すとともに、これを解決すべく、昇温過程において断熱材が発熱体よりも非常に高温になる局部過熱現象を抑制し、発熱体自体の蒸発問題や断熱材の外側に配置している構成材の耐熱問題を悉く解消するとともに、所定の高温にまで昇温させる昇温時間の短縮化及び生産効率の向上を実現可能な誘導加熱炉を提供することにある。   The present invention finds for the first time a problem that has not been noticed without being noticed so far, and in order to solve this, a local overheating phenomenon in which the heat insulating material becomes much higher than the heating element in the temperature rising process. Suppressing and solving the evaporation problem of the heating element itself and the heat resistance problem of the components arranged outside the heat insulating material, shortening the heating time to raise the temperature to a predetermined high temperature and improving the production efficiency The object is to provide a feasible induction furnace.

すなわち本発明の誘導加熱炉は、加熱対象物を内部に収容可能な加熱室と、加熱室の外側を周回するように配置され且つ加熱対象物に対する加熱処理時の最高温度よりも融点が高い黒鉛又は高融点金属材料から形成した発熱体と、発熱体の外側を周回するように配置される導電性の断熱材と、断熱材の外側を周回するように配置される真空容器と、真空容器の外側に巻回されるコイルとを備え、断熱材として、発熱体を構成する黒鉛又は高融点金属材料よりも固有抵抗が大きい素材から形成し且つスリットによって周方向に分断されたものを適用し、スリットは、所定部分を延伸方向に対して所定角度屈曲させた屈曲部と、屈曲部よりも断熱材の外周側の部分である外周側径方向延伸部分とを有するものであり、屈曲部のうち外周側径方向延伸部分側に寄った所定領域から外周側径方向延伸部分に亘る部分の一部又は全部に、絶縁体として機能する耐熱材を詰めていることを特徴としている。   That is, the induction heating furnace of the present invention includes a heating chamber in which a heating object can be accommodated, and graphite having a melting point higher than the maximum temperature at the time of heat treatment for the heating object, and arranged so as to go around the outside of the heating chamber. Or a heating element formed from a refractory metal material, a conductive heat insulating material arranged to circulate around the outside of the heating element, a vacuum container arranged to circulate around the outside of the heat insulating material, and a vacuum container A coil wound around the outside, and as a heat insulating material, a material having a specific resistance larger than that of graphite or a refractory metal material constituting the heating element and applied in a circumferential direction by a slit is applied, The slit has a bent portion obtained by bending a predetermined portion by a predetermined angle with respect to the extending direction, and an outer peripheral side radially extending portion that is a portion on the outer peripheral side of the heat insulating material with respect to the bent portion. Peripheral radial extension Some or all of the portion over the outer circumferential side radially extending portion from the predetermined area closer to the part side, characterized in that packed the heat-resistant material which acts as an insulator.

ここで、発熱体を形成する高融点材料としては、黒鉛、タングステン、タンタル、あるいはこれらの合金などを挙げることができる。
このような断熱材を備えた誘導加熱炉であれば、コイルに電流を流して発熱体を所定の高温にまで昇温させる過程において、その熱量の増加に応じて断熱材も昇温するが、断熱材全体を周回して流れようとする渦電流を、スリットが存在しない場合に比べて小さな電流にすることができ、断熱材が発熱体よりも急激に昇温する自体を防止・抑制することができることを本発明者は確認した。
Here, examples of the high melting point material forming the heating element include graphite, tungsten, tantalum, and alloys thereof.
If it is an induction heating furnace equipped with such a heat insulating material, in the process of raising the heating element to a predetermined high temperature by passing an electric current through the coil, the heat insulating material also heats up as the amount of heat increases, The eddy current that flows around the entire heat insulating material can be reduced to a smaller current than when there is no slit, preventing and suppressing the heat insulating material itself from heating up more rapidly than the heating element. The present inventor has confirmed that this is possible.

昇温過程における断熱材の局所的な過熱状態はこれまで気付かれなかったが、このような局所的過熱現象によって、上述した不具合、つまり、発熱体を構成する高融点材料の蒸発や断熱材の外側に配置する部材(真空容器)の過熱といった不具合を招来し得る。   Although the local overheating state of the heat insulating material in the temperature rising process has not been noticed so far, such a local overheating phenomenon causes the above-described problem, that is, evaporation of the high melting point material constituting the heating element and heat insulating material. Problems such as overheating of the member (vacuum container) arranged on the outside can be caused.

そこで、本発明の誘導加熱炉では、発熱体を構成する黒鉛又は高融点金属材料に比べて固有抵抗が十分に大きい素材から形成した導電性の断熱材を導電体として考慮し、昇温過程においてコイルに流す電流量の増加に伴って増加する断熱材全体に流れる電流が周回経路を辿らないように、スリットで断熱材を周方向に分断し、スリット自体が抵抗増大に貢献することで昇温過程における断熱材の発熱量が減少し、断熱材の局所的過熱現象を防止・抑制することができるように構成した。また、スリットで断熱材を周方向に分断することで、電磁誘導によって導電性の断熱材に発生する起電力(誘導起電力)の大きさを規定する面積(断熱材における磁束方向に垂直な断面)を分断して減らすことができ、この面積の減少によって誘導起電力を小さくして、断熱材を流れる電流量及び断熱材の発熱量を小さくすることで、断熱材の局所的過熱現象を防止・抑制することができる。 Therefore, in the induction heating furnace of the present invention, a conductive heat insulating material formed from a material having a sufficiently large specific resistance as compared with graphite or a refractory metal material constituting the heating element is considered as a conductor, In order to prevent the current flowing in the whole insulation material that increases with the amount of current flowing through the coil from following the circuit path, the insulation material is divided in the circumferential direction by the slit, and the slit itself contributes to the increase in resistance. The heat generation amount of the heat insulating material in the process is reduced, and the local overheating phenomenon of the heat insulating material can be prevented / suppressed. Also, by dividing the heat insulating material in the circumferential direction with slits, an area that defines the size of the electromotive force (induced electromotive force) generated in the conductive heat insulating material by electromagnetic induction (cross section perpendicular to the magnetic flux direction in the heat insulating material) ) Can be reduced by reducing this area, and by reducing the induced electromotive force, the amount of current flowing through the heat insulating material and the amount of heat generated by the heat insulating material are reduced, thereby preventing local overheating of the heat insulating material. -It can be suppressed.

本発明の誘導加熱炉において、スリットを介して発熱体の輻射熱が断熱材の外部へ漏れることを回避するとともに、スリットの開口幅を確保できるようにするには、スリットの所定部分に耐熱材を詰める構成を採用することが好ましい。   In the induction heating furnace of the present invention, in order to prevent the radiant heat of the heating element from leaking to the outside of the heat insulating material through the slit and to ensure the opening width of the slit, a heat resistant material is applied to a predetermined portion of the slit. It is preferable to adopt a packing configuration.

本発明におけるスリットは、断熱材を周方向に分断するものであればどのような形状であってもよく、一例として、断熱材の径方向に延伸する直線状や曲線状を挙げることができる。特に、断熱材の径方向に延伸するスリットの所定部分を延伸方向に対して所定角度屈曲させた屈曲部に設定した場合、発熱体の輻射を屈曲部で受けることによって、輻射の熱量・温度を効果的に下げることができ、輻射が断熱材の外部へ直接漏れる事態を回避することができる。   The slit in the present invention may have any shape as long as it divides the heat insulating material in the circumferential direction, and examples thereof include a linear shape and a curved shape extending in the radial direction of the heat insulating material. In particular, when a predetermined portion of the slit extending in the radial direction of the heat insulating material is set to a bent portion bent at a predetermined angle with respect to the extending direction, the heat quantity and temperature of the radiation can be reduced by receiving the radiation of the heating element at the bent portion. It can reduce effectively and the situation where radiation leaks directly to the exterior of a heat insulating material can be avoided.

このように、本発明では、黒鉛又は高融点金属材料で形成した発熱体よりも抵抗が十分に高い材料からなり且つ昇温過程において局部的に過熱状態になり得る導電性の断熱材を発熱抵抗体として考慮し、断熱材をスリットによって周方向に分割することで、平衡状態時には顕著に表れずに昇温時にのみ発生する断熱材の局部的過熱を防止・抑制することができる。そして、本発明誘導加熱炉であれば、断熱材の局部過熱を抑制することができるため、昇温速度を制限することなく、所望の温度まで短時間で昇温でき、昇温時間の短縮化、ひいては生産効率の向上を実現することが可能である。 As described above, in the present invention, a conductive heat insulating material made of a material having sufficiently higher resistance than a heating element formed of graphite or a refractory metal material and capable of being locally overheated during a temperature rising process is provided with a heating resistance. By considering the body as a body and dividing the heat insulating material in the circumferential direction by slits, local overheating of the heat insulating material that occurs only at the time of temperature rise and does not appear remarkably in an equilibrium state can be prevented and suppressed. And if it is this invention induction heating furnace, since it can suppress the local overheating of a heat insulating material, it can heat up to desired temperature in a short time, without restricting a temperature rising rate, and shortens temperature rising time. As a result, it is possible to improve the production efficiency.

本発明の一実施形態に係る誘導加熱炉の模式的な断面図。The typical sectional view of the induction heating furnace concerning one embodiment of the present invention. 同実施形態に係る誘導加熱炉に適用する発熱体及び断熱材の温度変化を検証する実験装置のうち周方向90度分(4分の1に相当する部分)を模式的に示す図。The figure which shows typically 90 degree | times (part equivalent to 1/4) of the circumferential direction among the experimental devices which verify the temperature change of the heat generating body applied to the induction heating furnace which concerns on the same embodiment, and a heat insulating material. 図2の実験装置の断面模式図。The cross-sectional schematic diagram of the experimental apparatus of FIG. 図2の実験装置を昇温させる過程及び高温の平衡状態における図3に示す各ポイントの温度変化を示す図。The figure which shows the temperature change of each point shown in FIG. 3 in the process of heating up the experimental apparatus of FIG. 2, and a high temperature equilibrium state. スリットを形成していない断熱材を用いた場合の図4対応図。FIG. 4 is a diagram corresponding to FIG. 4 in the case of using a heat insulating material in which no slit is formed. 同実施形態の断熱材に形成するスリットの一変形例を図2に対応させて示す図。The figure which shows the modification of the slit formed in the heat insulating material of the embodiment corresponding to FIG.

以下、本発明の一実施形態を、図面を参照して説明する。   Hereinafter, an embodiment of the present invention will be described with reference to the drawings.

本実施形態に係る誘導加熱炉1は、図1に示すように、内部に加熱対象物Wを収容可能な筒状の加熱室2と、加熱室2の周囲に配置した筒状の発熱体3と、発熱体3の周囲に配置した略筒状をなす導電性の断熱材4と、断熱材4の周囲に配置した真空容器5と、真空容器5の周囲に巻回されたコイル6とを備えたものである。   As shown in FIG. 1, an induction heating furnace 1 according to the present embodiment includes a cylindrical heating chamber 2 that can accommodate a heating object W therein, and a cylindrical heating element 3 disposed around the heating chamber 2. And a conductive insulating material 4 having a substantially cylindrical shape arranged around the heating element 3, a vacuum vessel 5 arranged around the insulating material 4, and a coil 6 wound around the vacuum vessel 5. It is provided.

真空容器5は、筒状をなし、底部給気口51から室内に供給され上方に流れるガス(キャリアガス、ケイ素原料ガス、炭素原料ガス等)を上部排気口52から排出可能に構成したものである。ガスは、加熱室2の内部を通過して排気口52から排気される。真空容器5の給気口51には、真空容器5内へのガスの供給量を調整して、加熱室2を通過するガス流量を調整可能なガス供給制御弁7を接続し、真空容器5の排気口52には真空容器5内の圧力を調整可能な圧力調整弁8を接続し、これら各弁(ガス供給制御弁7、圧力調整弁8)に接続した図示しない圧力調整装置により、各弁(ガス供給制御弁7、圧力調整弁8)を制御して真空容器5内の圧力を所定値に調整するように構成している。   The vacuum vessel 5 has a cylindrical shape and is configured such that gases (carrier gas, silicon source gas, carbon source gas, etc.) that are supplied into the room from the bottom inlet 51 and flow upward can be discharged from the upper outlet 52. is there. The gas passes through the inside of the heating chamber 2 and is exhausted from the exhaust port 52. A gas supply control valve 7 is connected to the air supply port 51 of the vacuum vessel 5 to adjust the gas supply amount into the vacuum vessel 5 and adjust the gas flow rate passing through the heating chamber 2. A pressure adjusting valve 8 capable of adjusting the pressure in the vacuum vessel 5 is connected to the exhaust port 52 of the gas tank, and each pressure adjusting device (not shown) connected to each of these valves (gas supply control valve 7 and pressure adjusting valve 8) The valves (the gas supply control valve 7 and the pressure adjusting valve 8) are controlled to adjust the pressure in the vacuum vessel 5 to a predetermined value.

コイル6は、真空容器5の外壁から所定距離離れた位置において真空容器5を取り巻くように螺旋状に配置した誘導加熱コイル(高周波コイル)である。このコイル6には、任意の周波数の交流電力を出力可能な図示しない電源装置が接続され、電源装置からコイル6に対して交流電力を供給することで、コイル6の周囲に交番磁場を発生させ、この交番磁場を浸透対象物に浸透させて誘導加熱する。   The coil 6 is an induction heating coil (high-frequency coil) arranged in a spiral shape so as to surround the vacuum vessel 5 at a position away from the outer wall of the vacuum vessel 5 by a predetermined distance. The coil 6 is connected to a power supply device (not shown) that can output AC power of an arbitrary frequency. By supplying AC power to the coil 6 from the power supply device, an alternating magnetic field is generated around the coil 6. Then, this alternating magnetic field is infiltrated into the permeation target and induction heating is performed.

加熱室2は、誘導加熱処理時の最高温度よりも融点が高い高融点材料である黒鉛から形成され且つ真空容器5の内部空間の中心に配置されるサセプタであり、内壁に加熱対象物Wを対面させた状態で設置可能なものである。この加熱室2は、コイル6で加熱された発熱体3から放出される熱(輻射熱)によって間接的に加熱される。図1では、加熱室2の内部に、加熱対象物Wとしてウェハを配置した状態の誘導加熱炉1(縦型ホットウォールCVDエピタキシャル装置)を示している。 The heating chamber 2 is a susceptor that is formed of graphite, which is a high melting point material having a higher melting point than the highest temperature during induction heating treatment, and is disposed at the center of the internal space of the vacuum vessel 5. It can be installed face-to-face. The heating chamber 2 is indirectly heated by heat (radiant heat) emitted from the heating element 3 heated by the coil 6. FIG. 1 shows an induction heating furnace 1 (vertical hot wall CVD epitaxial apparatus) in a state where a wafer is arranged as a heating object W inside the heating chamber 2.

発熱体3は、加熱室2と同じ素材、つまり高融点材料である黒鉛から形成される一体成形物であり、軸中心を加熱室2の中心、すなわち真空容器5の内部空間の中心に一致させた状態で加熱室2の外側に配置される。   The heating element 3 is an integrally molded product formed of the same material as the heating chamber 2, that is, graphite which is a high melting point material, and the center of the axis is aligned with the center of the heating chamber 2, that is, the center of the internal space of the vacuum vessel 5. In this state, it is disposed outside the heating chamber 2.

断熱材4は、軸中心を加熱室2の中心、すなわち真空容器5の内部空間の中心に一致させた状態で発熱体3の外側に配置され、コイル6で加熱された発熱体3から放出される熱が外部へ漏れないように遮断する機能を発揮し得るものである。断熱材4は、導電性及び耐熱性を有し且つ発熱体3を形成する高融点材料(本実施形態では黒鉛)よりも十分に大きい体積固有抵抗率(以下では「固有抵抗」と称する場合がある)を有する素材から形成されたものである。本実施形態では、カーボンフェルトで形成した断熱材4を適用している。断熱材4と発熱体3は適宜の手段によって電気的に絶縁状態にある。   The heat insulating material 4 is disposed outside the heating element 3 with its axis center aligned with the center of the heating chamber 2, that is, the center of the internal space of the vacuum vessel 5, and is released from the heating element 3 heated by the coil 6. The function of blocking the heat so that it does not leak to the outside can be exhibited. The heat insulating material 4 has conductivity and heat resistance and is sufficiently larger than the high melting point material (graphite in this embodiment) forming the heating element 3 (hereinafter referred to as “specific resistance”). It is formed from a material having In this embodiment, the heat insulating material 4 formed with carbon felt is applied. The heat insulating material 4 and the heating element 3 are electrically insulated by appropriate means.

そして、筒状をなす断熱材4には、この断熱材4を周方向に分断するスリットSを形成している。スリットSは、断熱材4の内周側縁部から外周側縁部に向かって径方向に延伸する直線状をなし、断熱材4の高さ方向全域に亘って形成されたものである。本実施形態では、断熱材4を周方向に例えば4等分する位置にそれぞれスリットSを形成している。各スリットSは、断熱材の中心から放射状に延伸する形状である。スリット数は、誘導加熱炉1による処理内容や、断熱材4の形状、素材などの諸要素を考慮した上で適宜の数に設計変更してもよい。なお、図1では、断熱材4のスリットS(具体的にはスリットS内に詰めた後述する耐熱材T)を通る断面を示している。   And the slit S which divides this heat insulating material 4 in the circumferential direction is formed in the heat insulating material 4 which makes | forms a cylinder shape. The slit S has a linear shape extending in the radial direction from the inner peripheral edge of the heat insulating material 4 toward the outer peripheral edge, and is formed over the entire height direction of the heat insulating material 4. In the present embodiment, the slits S are formed at positions that divide the heat insulating material 4 into, for example, four equal parts in the circumferential direction. Each slit S has a shape extending radially from the center of the heat insulating material. The number of slits may be changed to an appropriate number in consideration of various factors such as the contents of treatment by the induction heating furnace 1, the shape of the heat insulating material 4, and the material. In addition, in FIG. 1, the cross section which passes along the slit S of the heat insulating material 4 (specifically heat-resistant material T mentioned later packed in the slit S) is shown.

ここで、断熱材4のうちスリットSによって分断された部分(区画された部分)を「単位断熱材4」として捉えると、本実施形態の断熱材4は、スリットSを介して周方向に隣り合う4つの単位断熱材を有するものであるといえる。   Here, if the part (partitioned part) divided | segmented by the slit S among the heat insulating materials 4 is caught as the "unit heat insulating material 4", the heat insulating material 4 of this embodiment will adjoin the circumferential direction through the slit S. FIG. It can be said that it has four unit heat insulating materials.

また、本実施形態の断熱材4は、耐火性に優れた耐熱材TをスリットSに詰め、発熱体3の輻射がスリットSを通過して直接外部へ放射されて外部の構成材(真空容器5やコイル6など)を加熱することを防止・抑制している。図1では、耐熱材Tを適宜のパターンを付して示している。耐熱材Tは、絶縁体としても機能するとともに、スリットSの開口幅を確保するスリット幅保持機能を発揮する。本実施形態の断熱材4は、断熱材4の径方向に延伸するスリットSの延伸方向全域及びスリットSの高さ方向全域に耐熱材Tを詰めている。本実施形態では、耐熱材Tとして優れた耐熱性及び絶縁性を有するセラミックスを適用している。このようなセラミックスとしては、アルミナ、ジルコニア、イットリアなどを挙げることができる。   Moreover, the heat insulating material 4 of this embodiment is filled with the heat-resistant material T excellent in fire resistance in the slit S, and the radiation of the heat generating body 3 passes directly through the slit S and is directly radiated to the outside. 5 and the coil 6) are prevented / suppressed. In FIG. 1, the heat-resistant material T is shown with an appropriate pattern. The heat-resistant material T functions as an insulator and also exhibits a slit width holding function for securing the opening width of the slit S. In the heat insulating material 4 of the present embodiment, the heat resistant material T is packed in the entire extending direction of the slit S extending in the radial direction of the heat insulating material 4 and in the entire height direction of the slit S. In the present embodiment, ceramics having excellent heat resistance and insulation are applied as the heat resistant material T. Examples of such ceramics include alumina, zirconia, and yttria.

また、図示しないが、本実施形態の誘導加熱炉1は、加熱室2の内部温度を計測する温度計や、温度計で計測した温度に基づいてコイル6の出力を制御する出力制御装置を備えたものである。   Moreover, although not shown in figure, the induction heating furnace 1 of this embodiment is equipped with the thermometer which measures the internal temperature of the heating chamber 2, and the output control apparatus which controls the output of the coil 6 based on the temperature measured with the thermometer. It is a thing.

次に、このような構成をなす誘導加熱炉1の動作及び作用効果について説明する。   Next, the operation and effect of the induction heating furnace 1 having such a configuration will be described.

加熱室2の所定位置にウェハWを設置した状態で、電源装置からコイル6に交流電力が供給されることによって、コイル6の周囲に交番磁場が生成され、この交番磁場は、断熱材4を介して高融点材料(本実施形態では黒鉛)からなる発熱体3に浸透し、発熱体3を誘導加熱する。その結果、発熱体3の輻射熱により加熱室2は間接的に加熱され、加熱室2内の温度が所定の目標温度(エピタキシャル成長温度、例えば1800℃)に到達した時点で、その温度を保持するようにコイル6の出力(電源装置からコイル6への交流電力供給量に応じたコイル6の出力)を制御し、高温の平衡状態を維持する。また、圧力調整装置により、真空容器5内の圧力値が所定の値となるように、ガス供給制御弁7及び圧力調整弁8を制御する。 An alternating magnetic field is generated around the coil 6 by supplying AC power from the power supply device to the coil 6 in a state where the wafer W is installed at a predetermined position in the heating chamber 2. It penetrates into the heating element 3 made of a high melting point material (graphite in this embodiment), and the heating element 3 is induction heated. As a result, the heating chamber 2 is indirectly heated by the radiant heat of the heating element 3, and when the temperature in the heating chamber 2 reaches a predetermined target temperature (epitaxial growth temperature, for example, 1800 ° C.), the temperature is maintained. The output of the coil 6 (the output of the coil 6 according to the amount of AC power supplied from the power supply device to the coil 6) is controlled to maintain a high temperature equilibrium state. Further, the gas supply control valve 7 and the pressure adjustment valve 8 are controlled by the pressure adjustment device so that the pressure value in the vacuum vessel 5 becomes a predetermined value.

このような処理により、本実施形態に係る誘導加熱炉1は、高温(1800℃程度)の平衡状態において、加熱室2内に配置したウェハWの表面に均一な膜厚のSiC薄膜を形成することができる。そして、原料ガスの供給量に比例してSiC薄膜の成長速度は増加することから、ガスを効率良く加熱して十分なガスの分解と供給を行うことでSiC薄膜の高速成長を得ることができる。つまり、本実施形態に係る誘導加熱炉1は、ウェハW上にSiC薄膜を形成するエピタキシャル成長を実現するCVDエピタキシャル装置として機能し、ウェハW上にエピタキシャル成長によってSiC薄膜を堆積させたエピタキシャルウェハを生産することができる。   By such processing, the induction heating furnace 1 according to the present embodiment forms a SiC thin film having a uniform thickness on the surface of the wafer W arranged in the heating chamber 2 in an equilibrium state of high temperature (about 1800 ° C.). be able to. Since the growth rate of the SiC thin film increases in proportion to the supply amount of the raw material gas, high-speed growth of the SiC thin film can be obtained by efficiently heating the gas and performing sufficient gas decomposition and supply. . That is, the induction heating furnace 1 according to this embodiment functions as a CVD epitaxial apparatus that realizes epitaxial growth for forming a SiC thin film on the wafer W, and produces an epitaxial wafer in which a SiC thin film is deposited on the wafer W by epitaxial growth. be able to.

本実施形態の誘導加熱炉1は、厚み及び不純物濃度を精密に制御したSiC薄膜をウェハW上に堆積させた高品質なエピタキシャルウェハを安定して供給することができ、SiC半導体デバイス実用化に多いに貢献する。   The induction heating furnace 1 of the present embodiment can stably supply a high-quality epitaxial wafer in which a SiC thin film whose thickness and impurity concentration are precisely controlled is deposited on the wafer W, and practical application of SiC semiconductor devices. Contribute to a lot.

ところで、発熱体3を所定の温度まで上昇させる昇温過程において、ある一定程度の昇温速度で加熱する場合に、断熱材4が発熱体3よりも局所的に過熱する場合がある。   By the way, in the temperature raising process in which the heating element 3 is raised to a predetermined temperature, the heat insulating material 4 may be locally heated rather than the heating element 3 when heated at a certain rate of temperature rise.

このような昇温過程における断熱材4の局所的過熱現象は、断熱材4を構成するカーボンフェルトの断熱性と低密度性(低熱容量性)に起因するものであり、高温の平衡状態では、昇温時と比較して、電源装置からコイル6への交流電力供給量が少なくなったり、交流電力供給量の急激な変化が生じないことから、導電性である断熱材4の発熱量の急激な上昇や大きな変動はない。ここで、ゆっくりと加熱した場合や発熱量が少量である加熱状態では、適宜の冷却手段による抜熱作用が有効に機能するため、断熱材4の局所的過熱現象は生じ難く、一方、急速に加熱した場合や発熱量が大量である加熱状態では、断熱材4なるがゆえに加熱作用が抜熱作用を上回り、断熱材4の局所的過熱現象が生じる。このように、高温の平衡状態では生じず、昇温過程においてのみ生じる断熱材4の局所的過熱現象はこれまで特に気付かれることもなく、問題視されることなかった。   The local overheating phenomenon of the heat insulating material 4 in such a temperature rising process is caused by the heat insulating property and low density (low heat capacity) of the carbon felt constituting the heat insulating material 4, and in a high temperature equilibrium state, Compared to when the temperature rises, the amount of AC power supplied from the power supply device to the coil 6 is not reduced, and a rapid change in the amount of AC power supply does not occur. There are no major rises or major fluctuations. Here, in the case of heating slowly or in a heating state where the calorific value is small, the heat removal action by an appropriate cooling means functions effectively, so that the local overheating phenomenon of the heat insulating material 4 hardly occurs, while rapidly When heated or in a heated state where the amount of generated heat is large, the heat action exceeds the heat removal action because of the heat insulating material 4, and a local overheating phenomenon of the heat insulating material 4 occurs. Thus, the local overheating phenomenon of the heat insulating material 4 which does not occur in a high temperature equilibrium state and occurs only in the temperature rising process has not been particularly noticed and has not been regarded as a problem.

しかしながら、このような昇温過程における断熱材4の局所的過熱現象は、発熱体3を構成する高融点材料(本実施形態では黒鉛)の蒸発を招来するとともに、断熱材4の外側に配置した真空容器5が過熱状態にならぬよう真空容器5に過度の耐熱性を要求することになり得る。 However, the local overheating phenomenon of the heat insulating material 4 in such a temperature rising process causes evaporation of the high melting point material (graphite in the present embodiment) constituting the heating element 3 and is disposed outside the heat insulating material 4. Excessive heat resistance may be required for the vacuum vessel 5 so that the vacuum vessel 5 does not overheat.

そこで、本実施形態の誘導加熱炉は、スリットSによって周方向に分断した断熱材4を適用し、スリットSの存在によって抵抗を大きくし、電源装置からコイル6への交流電力供給に応じて断熱材4に流れる渦電流がスリットSを通過せず、スリットSが存在しない場合に比べて小さい電流となるようにした。   Therefore, the induction heating furnace of the present embodiment applies the heat insulating material 4 divided in the circumferential direction by the slit S, increases the resistance due to the presence of the slit S, and insulates according to the AC power supply from the power supply device to the coil 6. The eddy current flowing in the material 4 does not pass through the slit S, so that the current is smaller than when the slit S does not exist.

そして、本発明者は、図3に示す実験装置Xを用いて、図4に示す観察点を熱電対にて温度を実測し、昇温過程において断熱材4が加熱対象である発熱体3よりも一時的に高温になることを、図5に示す測定結果にて確認した。   Then, the inventor measured the temperature at the observation point shown in FIG. 4 with a thermocouple using the experimental device X shown in FIG. 3, and the heat insulating material 4 was heated from the heating element 3 to be heated in the temperature rising process. It was confirmed by the measurement results shown in FIG.

図3には、本実施形態の誘導加熱炉1における発熱体3及び断熱材4の昇温過程時の温度変化を検証すべく、発熱体3に相当する黒鉛製又は高融点金属製(本実施装置Xでは黒鉛製)の円柱体Yの外側に、スリットSによって周方向に分断したカーボンフェルトからなる断熱材4を配置し、この断熱材4の外側に巻回したコイル6に電流を流して誘導加熱により黒鉛製又は高融点金属製の円柱体Yを加熱可能な実験装置Xの周方向90度分(周方向に4分の1に相当する部分)を模式的に示す。なお、この実施権装置Xは、カーボンフェルトからなる断熱材4がスリットSの有無によって昇温過程における温度変化が異なること実証するための装置であり、加熱処置時の最高温度として1200度程度を想定しているため、耐熱材Tとして、ガラス繊維製のテープを適用している。 In FIG. 3, in order to verify the temperature change during the heating process of the heating element 3 and the heat insulating material 4 in the induction heating furnace 1 of the present embodiment, the heating element 3 made of graphite or refractory metal (this embodiment) The heat insulating material 4 made of carbon felt divided in the circumferential direction by the slit S is arranged outside the cylindrical body Y made of graphite in the apparatus X, and a current is passed through the coil 6 wound outside the heat insulating material 4. FIG. 2 schematically shows 90 degrees in the circumferential direction (a portion corresponding to one-fourth in the circumferential direction) of an experimental apparatus X that can heat a columnar body Y made of graphite or refractory metal by induction heating. The licensed device X is a device for demonstrating that the temperature change in the heating process differs depending on the presence or absence of the slit S in the heat insulating material 4 made of carbon felt, and the maximum temperature during the heating treatment is about 1200 degrees. Since it is assumed, a glass fiber tape is applied as the heat-resistant material T.

また、図4に、実験装置Xにおける黒鉛製又は高融点金属製(本実施装置Xでは黒鉛製)円柱体Y及び断熱材4の温度変化例を示す。黒鉛製又は高融点金属製円柱体Yと断熱材4は適宜の手段で相互に絶縁している状態にある。 FIG. 4 shows an example of temperature changes of the columnar body Y and the heat insulating material 4 made of graphite or refractory metal ( made of graphite in the present embodiment apparatus X) in the experimental apparatus X. The columnar body Y made of graphite or refractory metal and the heat insulating material 4 are in a state of being insulated from each other by appropriate means.

ここで、図4に示す実線は、図3における黒鉛製又は高融点金属製円柱体Y(A点)の温度変化を示す線であり、図4に示す点線は、図3における断熱材4のうちB点の温度変化を示す線であり、図4に示す二点鎖線は、図3における断熱材4のうちC点の温度変化を示す線であり、図4に示す一点鎖線は、図3における断熱材4のうちD点の温度変化を示す線である。断熱材4のB点、C点、D点のうちコイル6に最も近い点はD点であり、コイル6から最も離れている点はB点である。なお、図3における数値は実験装置Xの各部材や地点間の寸法(単位はmm)である。 Here, the solid line shown in FIG. 4 is a line showing the temperature change of the graphite or refractory metal cylinder Y (point A) in FIG. 3, and the dotted line shown in FIG. 4 is the heat insulating material 4 in FIG. 4 is a line showing the temperature change at point B, the two-dot chain line shown in FIG. 4 is a line showing the temperature change at point C in the heat insulating material 4 in FIG. 3, and the one-dot chain line shown in FIG. It is a line which shows the temperature change of D point among the heat insulating materials 4 in FIG. Of the points B, C, and D of the heat insulating material 4, the point closest to the coil 6 is the point D, and the point farthest from the coil 6 is the point B. In addition, the numerical value in FIG. 3 is the dimension (unit is mm) between each member and the point of the experimental apparatus X.

ここで、比較例として、上述した実験装置Xに準じた構成であって、断熱材4としてスリットSが形成されておらず、リング状に連続する周知のものを適用した実験装置において、加熱した場合の黒鉛製又は高融点金属製円柱体及び断熱材の温度変化例を図5に示す。ここで、図5に示す各線は、それぞれ図4に示す各線に対応する線である。 Here, as a comparative example, heating was performed in an experimental apparatus having a configuration in accordance with the experimental apparatus X described above, in which a slit S was not formed as the heat insulating material 4 and a well-known one continuous in a ring shape was applied. FIG. 5 shows a temperature change example of the graphite or refractory metal cylinder and the heat insulating material. Here, each line shown in FIG. 5 is a line corresponding to each line shown in FIG.

図5から把握できるように、発熱体である黒鉛製又は高融点金属製円柱体を昇温させる過程で、スリットが形成されていないカーボンフェルトからなる断熱材が、昇温すべき黒鉛製又は高融点金属製円柱体よりも先に加熱され、円柱体よりも急激に昇温して局所的に過熱状態になる。 As can be understood from FIG. 5, in the process of raising the temperature of the graphite or refractory metal cylinder that is the heating element, the heat insulating material made of carbon felt without slits is made of graphite or high It is heated before the cylindrical body made of a melting point metal, and the temperature rises more rapidly than the cylindrical body, resulting in a locally overheated state.

このように、カーボンフェルトを断熱材として使用すると、加熱したい黒鉛製又は高融点金属製の発熱体よりも先に断熱体が加熱され、断熱材そのものが局所的に加熱されることに加え、断熱材に接するまたは近接する構成体(真空容器)までも過熱状態に陥ることが懸念される。 Thus, when carbon felt is used as a heat insulating material, the heat insulating body is heated prior to the heating element made of graphite or refractory metal to be heated, and the heat insulating material itself is locally heated. There is a concern that even a structural body (vacuum container) in contact with or close to the material will be in an overheated state.

一方、図4から把握できるように、断熱材4としてスリットSによって周方向に分断したものを適用した実験装置Xでは、発熱体3である黒鉛製又は高融点金属製円柱体Yを昇温させる過程で、スリットSによって周方向に分断したカーボンフェルトからなる断熱材4も昇温するが、その昇温程度は発熱体3である黒鉛製又は高融点金属製円柱体Yと同程度であり、断熱材4のみが発熱体3よりも断然高温になって局所的に過熱状態に陥る事態を回避可能であることが判明した。 On the other hand, as can be understood from FIG. 4, in the experimental apparatus X to which the insulating material 4 divided in the circumferential direction by the slit S is applied, the temperature of the graphite or refractory metal cylinder Y that is the heating element 3 is increased. In the process, the temperature of the heat insulating material 4 made of carbon felt divided in the circumferential direction by the slits S is also raised, and the degree of the temperature rise is the same as that of the graphite or refractory metal cylinder Y that is the heating element 3, It has been found that it is possible to avoid a situation in which only the heat insulating material 4 becomes much hotter than the heating element 3 and locally falls into an overheated state.

したがって、このような昇温特性を有する断熱材4を誘導加熱炉1に適用することによって、昇温過程における断熱材4の局所的な過熱状態を防止することができ、発熱体3を構成する黒鉛又は高融点金属の蒸発や断熱材4の外側に配置した真空容器5の過熱現象を防止・抑制することができる。 Therefore, by applying the heat insulating material 4 having such a temperature rising characteristic to the induction heating furnace 1, a local overheating state of the heat insulating material 4 in the temperature rising process can be prevented, and the heating element 3 is configured. It is possible to prevent / suppress the evaporation of graphite or refractory metal and the overheating phenomenon of the vacuum vessel 5 disposed outside the heat insulating material 4.

このように、本実施形態に係る誘導加熱炉1は、これまでに気付かれずに着目されることがなかった問題点、つまり、高温の平衡状態では発熱量が少量のため誘導加熱炉1の温度分布に殆ど影響を及ぼさないが、発熱量が多くなる昇温過程において誘導加熱炉1の温度分布に影響を及ぼす断熱材4の局所的過熱現象に着目し、断熱材4をスリットSで周方向に分断する構造を採用することで、この局所的過熱現象を防止・抑制することができる。これにより、昇温過程における発熱体3自体の蒸発や断熱材4の外側に配置している構成材(真空容器5)の耐熱問題を悉く解消することができるとともに、所定の高温にまで昇温させる昇温速度を速く設定した場合であっても、断熱材4の局所的過熱現象を防止・抑制することができ、昇温時間の短縮化、ひいてはウェハW上に高速成長するSiC膜を得る生産工程の短縮化、すなわち生産効率の向上を実現することができる。   As described above, the induction heating furnace 1 according to the present embodiment has a problem that has not been noticed until now, that is, the temperature of the induction heating furnace 1 because the calorific value is small in a high temperature equilibrium state. Paying attention to the local overheating phenomenon of the heat insulating material 4 that affects the temperature distribution of the induction heating furnace 1 in the temperature rising process in which the calorific value is increased, while hardly affecting the distribution, the heat insulating material 4 is circumferentially formed by the slits S. This local overheating phenomenon can be prevented / suppressed by adopting a structure that divides into two. As a result, evaporation of the heating element 3 itself in the temperature rising process and the heat resistance problem of the constituent material (vacuum vessel 5) arranged outside the heat insulating material 4 can be solved at a high temperature, and the temperature is raised to a predetermined high temperature. Even when the heating rate to be set is set fast, the local overheating phenomenon of the heat insulating material 4 can be prevented / suppressed, the heating time can be shortened, and as a result, a SiC film that grows at high speed on the wafer W can be obtained. The production process can be shortened, that is, the production efficiency can be improved.

特に、本実施形態では、スリットSに耐熱材Tを詰めているため、発熱体3の輻射がスリットSを介して断熱材4の周囲に漏れる事態を耐熱材Tによって防止・抑制することができるとともに、スリットSの間隔を維持することができる。さらに、この耐熱材Tが、絶縁体として機能することによって、スリットSを形成した部分の抵抗がさらに大きくなり、断熱材4全体を周回しようとする渦電流を耐熱材Tによって確実に遮ることができ、スリットSの部分における良好な絶縁状態を確保することができる。   In particular, in this embodiment, since the heat-resistant material T is packed in the slit S, the heat-resistant material T can prevent / suppress the situation where the radiation of the heating element 3 leaks around the heat insulating material 4 through the slit S. At the same time, the interval between the slits S can be maintained. Furthermore, since the heat-resistant material T functions as an insulator, the resistance of the portion where the slits S are formed is further increased, and the eddy current that attempts to circulate the entire heat-insulating material 4 can be reliably blocked by the heat-resistant material T. It is possible to secure a good insulation state in the slit S portion.

なお、本発明は上述した実施形態に限定されるものではない。例えば、上述の実施形態では、断熱材の径方向に沿って直線状(平面視直線状)に延伸するスリットによって断熱材を周方向に分断した態様を例示したが、平面視形状が曲線状やジグザグ状、或いはこれらを適宜組み合わせた形状のスリットS(例えばスリットのうち断熱材の内周側部分が直線状であり、外周側部分が曲線状など)を採用することもできる。   In addition, this invention is not limited to embodiment mentioned above. For example, in the above-described embodiment, the mode in which the heat insulating material is divided in the circumferential direction by a slit extending linearly (in a straight line in plan view) along the radial direction of the heat insulating material is illustrated. A slit S having a zigzag shape or a combination of these in a suitable manner (for example, the inner peripheral side portion of the heat insulating material in the slit is linear and the outer peripheral side portion is curved) may be employed.

また、図6に示すように、断熱材4の径方向に沿って延伸するスリットSの所定部分を、その延伸方向に対して所定角度屈曲させた屈曲部S1に設定したスリットSによって断熱材4を周方向に分断する構成であってもよい。このような屈曲部S1を有するスリットSであれば、スリットSのうち直線部分S2を通過して屈曲部S1に到達した発熱体3の輻射が屈曲部S1に当たることになる。したがって、発熱体3の輻射がダイレクトに断熱材4の外部へ漏れる事態を防止できる。つまり、屈曲部S1自体が輻射漏れを遮蔽する輻射遮蔽手段として機能する。   Further, as shown in FIG. 6, the heat insulating material 4 is formed by the slit S set at a bent portion S <b> 1 in which a predetermined portion of the slit S extending along the radial direction of the heat insulating material 4 is bent at a predetermined angle with respect to the extending direction. The structure which divides | segments in the circumferential direction may be sufficient. In the case of the slit S having such a bent portion S1, the radiation of the heating element 3 that has passed through the straight portion S2 of the slit S and reached the bent portion S1 hits the bent portion S1. Therefore, it is possible to prevent the radiation of the heating element 3 from leaking directly to the outside of the heat insulating material 4. That is, the bent portion S1 itself functions as a radiation shielding unit that shields radiation leakage.

さらに、図6に示すように、スリットSのうち屈曲部S1に耐熱材Tを詰めた構成を採用すれば、屈曲部S1におけるスリット幅を確保することができるとともに、屈曲部S1の存在と相俟って輻射漏れをより一層確実に防止することができる。   Furthermore, as shown in FIG. 6, if a configuration in which the heat-resistant material T is packed in the bent portion S1 of the slit S is adopted, the slit width in the bent portion S1 can be secured, and the presence and the presence of the bent portion S1 are compatible. As a result, radiation leakage can be prevented more reliably.

ここで、耐熱材は、上述の実施形態で示したようにスリットの全領域を詰めるように配置してもよいが、スリットの所定部分のみを詰めるように配置してもよい。   Here, the heat-resistant material may be arranged so as to fill the entire area of the slit as shown in the above-described embodiment, but may be arranged so as to pack only a predetermined portion of the slit.

特に、図6に示すように、スリットSが、屈曲部S1と、屈曲部S1よりも断熱材4の内周側の径方向延伸部分S2と、屈曲部S1よりも断熱材4の外周側の径方向延伸部分S3とを有するものである場合、内周側の径方向延伸部分S2、屈曲部S1、外周側の径方向延伸部分S3の順に通過する発熱体3の輻射は、内周側の径方向延伸部分S2から屈曲部S1に到達して当たることにより温度が低下するため、耐熱材Tを屈曲部S1のうち外周側径方向延伸部分S3側に寄った所定領域から外周側径方向延伸部分S3に亘る部分、すなわち温度が低下した輻射が当たる部分に詰めることが望ましい。さらに、この耐熱材を絶縁性の素材から構成すれば、輻射が直接外部に漏れることを防止するとともに、スリット部分の絶縁状態を確保することができる。なお、スリットのうち内周側の径方向延伸部分や、外周側の径方向延伸部分は直線状以外の形状であってもよい。   In particular, as shown in FIG. 6, the slit S includes a bent portion S1, a radially extending portion S2 on the inner peripheral side of the heat insulating material 4 with respect to the bent portion S1, and an outer peripheral side of the heat insulating material 4 with respect to the bent portion S1. In the case of having the radially extending portion S3, the radiation of the heating element 3 that passes through the radially extending portion S2 on the inner circumferential side, the bent portion S1, and the radially extending portion S3 on the outer circumferential side, Since the temperature decreases by reaching and reaching the bent portion S1 from the radially extending portion S2, the outer peripheral side radially extending portion of the heat-resistant material T from a predetermined region of the bent portion S1 that is closer to the outer radially extending portion S3 side. It is desirable to pack the portion over the portion S3, that is, the portion that is irradiated with radiation whose temperature has decreased. Furthermore, if this heat-resistant material is made of an insulating material, radiation can be prevented from leaking directly to the outside, and an insulating state of the slit portion can be secured. The radially extending portion on the inner peripheral side and the radially extending portion on the outer peripheral side of the slit may have a shape other than a linear shape.

耐熱材として、上述の誘導加熱炉ではセラミックスを用い、上述の実験装置ではガラス繊維製テープを用いたが、誘導加熱処理時の高温に晒されても物性を維持することが可能な耐熱材であればどのような素材からなる耐熱材であっても構わない。   As the heat-resistant material, ceramics were used in the induction heating furnace described above, and glass fiber tape was used in the experimental apparatus described above. However, the heat-resistant material is capable of maintaining physical properties even when exposed to high temperatures during induction heat treatment. Any heat-resistant material may be used as long as it is present.

また、スリットの開口幅を確保可能なスリット幅保持手段を、耐熱材以外の適宜の部材や機構によって実現している態様であれば、耐熱材を省略することができる。耐熱材を省略した構成であれば、スリットを介して断熱材の外部に漏れる輻射が耐熱材を通過しない分だけその熱量が大きくなり、断熱材の外部に配置する構成材(真空容器)が不用意に加熱される事態が考えられる。この場合には、真空容器を冷却する冷媒を流通させる管路を真空容器内、或いは真空容器の内壁または外壁に設けることで、過熱状態になる事態を防止・抑制することができる。   Moreover, if the slit width holding means that can ensure the opening width of the slit is realized by an appropriate member or mechanism other than the heat resistant material, the heat resistant material can be omitted. If the heat-resistant material is omitted, radiation that leaks to the outside of the heat insulating material through the slit is increased by the amount that does not pass through the heat-resistant material, and there is no component (vacuum container) to be placed outside the heat insulating material. The situation where it is heated easily is considered. In this case, it is possible to prevent / suppress the situation of overheating by providing a conduit for circulating a coolant for cooling the vacuum vessel in the vacuum vessel or on the inner wall or outer wall of the vacuum vessel.

また、上述した実施形態では、スリットによって断熱材を周方向に4等分する態様を例示したが、スリットの数を適宜増減することで、断熱材の分割数を変更してもよい。ここで、断熱材の分割数(上述の実施形態における「単位断熱材」(スリットによって分断・区画された部分)の数)は、スリットの数と同数になる。なお、スリットを1つだけ形成した場合、断熱材の分割数はゼロになるが、この場合、分割数1と捉えれば、スリットの数と断熱材の分割数が同じになる関係は維持される。   Moreover, although the aspect which divides a heat insulating material into 4 equal to the circumferential direction by the slit was illustrated in embodiment mentioned above, you may change the division | segmentation number of a heat insulating material by increasing / decreasing the number of slits suitably. Here, the number of divisions of the heat insulating material (the number of “unit heat insulating materials” (parts divided and divided by the slits) in the above-described embodiment) is the same as the number of slits. In addition, when only one slit is formed, the number of divisions of the heat insulating material becomes zero. In this case, if the number of divisions is regarded as 1, the relationship in which the number of slits and the number of divisions of the heat insulating material are the same is maintained. .

また、誘導加熱炉は、加熱対象物に対して化学反応を利用して適宜の処置を施すものであってもよいし、加熱対象物に対して焼結又は溶解を利用して適宜の処理を施すものであってもよい。   In addition, the induction heating furnace may perform an appropriate treatment using a chemical reaction on the object to be heated, or may perform an appropriate treatment using sintering or melting on the object to be heated. It may be applied.

加熱対象物は、ウェハ以外のものであっても構わない。また、発熱体を構成する素材は、加熱対象物に対する加熱処理時の最高温度よりも融点が高い黒鉛又は高融点金属材料であればよく、黒鉛の他に、タングステン、タンタル、モリブデン,ニオブ、或いはこれらの合金を挙げることができる。断熱材もまた、発熱体を構成する黒鉛又は高融点金属材料よりも固有抵抗が大きい素材から形成したものであればよく、カーボンフェルト以外のものであっても勿論構わない。 The object to be heated may be other than a wafer. In addition, the material constituting the heating element may be graphite or a refractory metal material having a melting point higher than the maximum temperature at the time of heat treatment on the object to be heated. In addition to graphite, tungsten, tantalum, molybdenum, niobium, or These alloys can be mentioned. The heat insulating material may also be made of a material having a specific resistance larger than that of graphite or refractory metal material constituting the heating element, and may be other than carbon felt.

その他、各部の具体的構成についても上記実施形態に限られるものではなく、本発明の趣旨を逸脱しない範囲で種々変形が可能である。   In addition, the specific configuration of each part is not limited to the above embodiment, and various modifications can be made without departing from the spirit of the present invention.

1…誘導加熱炉
2…加熱室
3…発熱体
4…断熱材
5…真空容器
6…コイル
S…スリット
S1…屈曲部
T…耐熱材
W…ウェハ(加熱対象物)
DESCRIPTION OF SYMBOLS 1 ... Induction heating furnace 2 ... Heating chamber 3 ... Heat generating body 4 ... Heat insulating material 5 ... Vacuum container 6 ... Coil S ... Slit S1 ... Bending part T ... Heat-resistant material W ... Wafer (heating object)

Claims (1)

加熱対象物を内部に収容可能な加熱室と、
前記加熱室の外側を周回するように配置され且つ前記加熱対象物に対する加熱処理時の最高温度よりも融点が高い黒鉛又は高融点金属材料から形成した発熱体と、
前記発熱体の外側を周回するように配置される導電性の断熱材と、
前記断熱材の外側を周回するように配置される真空容器と、
前記真空容器の外側に巻回されるコイルとを備えた誘導加熱炉であって、
前記断熱材は、前記発熱体を構成する黒鉛又は高融点金属材料よりも固有抵抗が大きい素材から形成され且つスリットで周方向に分断されたものであり、
前記スリットは、所定部分を延伸方向に対して所定角度屈曲させた屈曲部と、当該屈曲部よりも前記断熱材の外周側の部分である外周側径方向延伸部分とを有するものであり、
前記屈曲部のうち前記外周側径方向延伸部分側に寄った所定領域から前記外周側径方向延伸部分に亘る部分の一部又は全部に、絶縁体として機能する耐熱材を詰めていることを特徴とする誘導加熱炉。
A heating chamber capable of accommodating a heating object inside;
A heating element formed from graphite or a refractory metal material, which is arranged so as to circulate around the outside of the heating chamber and has a melting point higher than the highest temperature during the heat treatment for the heating object;
A conductive heat insulating material arranged to circulate around the outside of the heating element;
A vacuum vessel arranged to circulate around the outside of the heat insulating material;
An induction heating furnace comprising a coil wound around the outside of the vacuum vessel,
The heat insulating material is formed from a material having a larger specific resistance than graphite or a refractory metal material constituting the heating element, and is divided in a circumferential direction by a slit,
The slit has a bent portion obtained by bending a predetermined portion by a predetermined angle with respect to the extending direction, and an outer peripheral radial extending portion that is a portion on the outer peripheral side of the heat insulating material with respect to the bent portion,
A heat-resistant material that functions as an insulator is packed in a part or all of a portion extending from a predetermined region of the bent portion toward the outer peripheral radial extension portion to the outer peripheral radial extension portion. Induction heating furnace.
JP2012213353A 2012-09-27 2012-09-27 Induction heating furnace Active JP6135082B2 (en)

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CN107937735A (en) * 2017-12-29 2018-04-20 山西大学 A kind of efficient magnesium reduction jar of electromagnetic induction heating
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CN118326523A (en) * 2024-04-18 2024-07-12 西安交通大学 A heat preservation device suitable for induction heating crystal growth furnace and crystal growth furnace
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JPS5828980A (en) * 1981-08-14 1983-02-21 東レ株式会社 Induction heating furnace
JPH06267652A (en) * 1993-03-12 1994-09-22 Hitachi Medical Corp Vacuum heat treatment device
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