JP6139731B2 - Method for manufacturing photoelectric conversion device - Google Patents

Description

The present invention relates to a method for manufacturing a heterojunction photoelectric conversion device and a photoelectric conversion device.

In recent years, photoelectric conversion devices have attracted attention as power generation means that can reduce carbon dioxide emissions. As a typical example, a solar cell using a silicon substrate such as single crystal silicon or polycrystalline silicon is known, and research and development for increasing its conversion efficiency is being actively conducted.

In solar cells using a silicon substrate, a p-type silicon substrate is often used. A p-type silicon substrate has a longer diffusion length than an n-type silicon substrate, and it is easy to efficiently collect minority carriers generated in the substrate.

In general, boron is used as an impurity imparting p-type conductivity to a silicon substrate. However, when boron and oxygen coexist in the silicon substrate, a deep level is formed and carriers are present in the level. Becomes easier to capture. For this reason, lifetime will fall. This phenomenon is also referred to as light deterioration because it occurs during intense light irradiation, and is one factor that reduces the conversion efficiency of solar cells.

As a countermeasure against the above-described photodegradation, Patent Document 1 discloses a technique in which an impurity imparting p-type conductivity is gallium and a silicon substrate having a low oxygen concentration is used for a solar cell.

In addition, the n-type silicon substrate does not contain boron as an impurity imparting conductivity, and does not cause light degradation. Further, when there is impurity contamination in the silicon substrate, the electron capture cross section is larger than the hole capture cross section, and therefore, if the amount of contamination is sufficiently small, the n-type silicon substrate in which holes are minority carriers. Can increase the lifetime. Therefore,
Recently, solar cells using an n-type silicon substrate have been developed.

JP 2002-57351 A

However, the effective lifetime of a silicon substrate is strongly influenced not only by bulk properties but also by surface defects. Therefore, in order to obtain the effect of improving the bulk characteristics, it is important to reduce surface defects.

In particular, when a surface irregularity is provided on a silicon substrate for imparting an optical effect, the surface area increases, so the absolute amount of surface defects also increases. Surface defects promote surface recombination and reduce the effective lifetime.

That is, by reducing the surface defects of the silicon substrate as much as possible, the effective lifetime can be further improved, and the electrical characteristics of the photoelectric conversion device can be improved. In particular, when an n-type silicon substrate is used, the lifetime is easily improved for the reasons described above.

Therefore, an object of one embodiment of the present invention is to provide a method for manufacturing a photoelectric conversion device provided with a passivation layer that reduces surface defects of a silicon substrate as much as possible. Another object is to provide the photoelectric conversion device.

One embodiment of the present invention disclosed in this specification relates to a method for manufacturing a heterojunction photoelectric conversion device provided with a passivation film that reduces surface defects of a silicon substrate as much as possible, and the photoelectric conversion device.

One embodiment of the present invention disclosed in this specification includes a first step of preparing a silicon substrate having an n-type conductivity type, and an i-type or n-type conductivity type on one surface of the silicon substrate. A second step of forming a first semiconductor layer having a carrier concentration lower than that of the silicon substrate; and a second step of forming an n-type conductivity type on the first semiconductor layer and having a carrier concentration higher than that of the silicon substrate. A third step of forming a semiconductor layer; a fourth step of forming a third semiconductor layer having an i-type or p-type conductivity type on the other surface of the silicon substrate; and And a fifth step of forming a fourth semiconductor layer having a p-type conductivity and a carrier concentration higher than that of the third semiconductor layer, and forming a light-transmitting conductive film on the fourth semiconductor layer. A sixth step and a seventh step of forming a first electrode on the second semiconductor layer;
And an eighth step of forming a second electrode on the translucent conductive film. The second step and the fourth step include argon and monosilane in the source gas, This is a method for manufacturing a photoelectric conversion device, which is performed by a plasma CVD method in which a flow rate ratio X (X = argon flow rate / monosilane flow rate) is set to 0 <X <0.8.

It should be noted that ordinal numbers such as “first” and “second” in this specification and the like are added to avoid confusion between components, and do not limit the order or number.

In the above method for manufacturing a photoelectric conversion device, the fourth step may be omitted and a fourth semiconductor layer may be formed on the other surface of the silicon substrate.

The concentration of oxygen contained in the silicon substrate is preferably 8 × 10 ¹⁷ atoms / cm ³ or less.

A silicon semiconductor layer can be used for the first semiconductor layer, the second semiconductor layer, the third semiconductor layer, and the fourth semiconductor layer. Alternatively, the first semiconductor layer, the second semiconductor layer, the third
The semiconductor layer may be a silicon semiconductor layer, and the fourth semiconductor layer may be an oxide semiconductor layer.

The oxide semiconductor layer is preferably formed using an oxide of a metal belonging to Group 4 to Group 8.

The oxide semiconductor layer is preferably formed using a material having a band gap of 2 eV or more.

The oxide semiconductor layer is preferably formed using vanadium oxide, niobium oxide, tantalum oxide, chromium oxide, molybdenum oxide, tungsten oxide, manganese oxide, or rhenium oxide.

Another embodiment of the present invention disclosed in this specification is a silicon substrate having an n-type conductivity between a pair of electrodes, and an i-type or n-type formed on one surface of the silicon substrate. Have conductivity type,
A first semiconductor layer having a carrier concentration lower than that of the silicon substrate, and a second semiconductor formed on the first semiconductor layer and having an n-type conductivity and having a carrier concentration higher than that of the first semiconductor layer. Layers,
A third semiconductor layer having an i-type or p-type conductivity type formed on the other surface of the silicon substrate; and a p-type conductivity type formed on the third semiconductor layer; A fourth semiconductor layer having a carrier concentration higher than that of the third semiconductor layer, and a light-transmitting conductive film formed on the fourth semiconductor layer, the first semiconductor layer and the third semiconductor layer having The concentration of argon contained is 1.2 × 10
^The photoelectric conversion device is characterized by being ¹⁸ atoms / cm ³ or more and 2.2 × 10 ¹⁸ atoms / cm ³ or less.

In the structure of the photoelectric conversion device, the third semiconductor layer may be omitted, and the fourth semiconductor layer may be formed on the other surface of the silicon substrate.

The concentration of oxygen contained in the silicon substrate is preferably 8 × 10 ¹⁷ atoms / cm ³ or less.

A silicon semiconductor layer can be used for the first semiconductor layer, the second semiconductor layer, the third semiconductor layer, and the fourth semiconductor layer. Alternatively, the first semiconductor layer, the second semiconductor layer, the third
The semiconductor layer may be a silicon semiconductor layer, and the fourth semiconductor layer may be an oxide semiconductor layer.

The oxide semiconductor layer is preferably formed using an oxide of a metal belonging to Group 4 to Group 8.

The oxide semiconductor layer is preferably formed of a material having a band gap of 2 eV or more.

The oxide semiconductor layer is preferably formed using vanadium oxide, niobium oxide, tantalum oxide, chromium oxide, molybdenum oxide, tungsten oxide, manganese oxide, or rhenium oxide.

By using one embodiment of the present invention, the effective lifetime of the silicon substrate can be improved, and the electrical characteristics of the photoelectric conversion device can be improved. In addition, a photoelectric conversion device with favorable electrical characteristics can be provided.

FIG. 6 is a cross-sectional view illustrating a photoelectric conversion device. FIG. 6 is a cross-sectional view illustrating a photoelectric conversion device. FIG. 6 is a cross-sectional view illustrating a photoelectric conversion device. FIG. 6 is a cross-sectional view illustrating a photoelectric conversion device. The figure which shows the lifetime of the sample which provided the amorphous silicon layer with the source gas containing argon on both surfaces of the single crystal silicon substrate. The figure which shows the TDS measurement result of an amorphous silicon layer. The figure which shows the relationship between the argon concentration of an amorphous silicon layer, and lifetime. 10 is a cross-sectional view illustrating a method for manufacturing a photoelectric conversion device. FIG. 10 is a cross-sectional view illustrating a method for manufacturing a photoelectric conversion device. FIG. The figure which shows the IV characteristic of the element which formed the molybdenum oxide film | membrane on the silicon substrate. The figure which shows the spectral transmittance of a molybdenum oxide film and an amorphous silicon film. Comparison of IV characteristics of cells with and without argon added to the passivation layer.

Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. However, the present invention is not limited to the following description, and it will be easily understood by those skilled in the art that modes and details can be variously changed. In addition, the present invention is not construed as being limited to the description of the embodiments below. Note that the same portions or portions having similar functions are denoted by the same reference symbols throughout the drawings for describing the embodiments, and the repetitive description thereof may be omitted.

(Embodiment 1)
In this embodiment, a structure and a manufacturing method of a photoelectric conversion device according to one embodiment of the present invention will be described.

FIG. 1 is a cross-sectional view of a photoelectric conversion device according to one embodiment of the present invention. In the photoelectric conversion device, a first semiconductor layer 110, a second semiconductor layer 120, and a first electrode 170 are sequentially stacked on one surface of a silicon substrate 100, and on the other surface of the silicon substrate 100, Third semiconductor layer 130
The fourth semiconductor layer 140, the translucent conductive film 160, and the second electrode 190 are sequentially stacked. Note that the second electrode 190 is a grid electrode, and the surface side on which the second electrode 190 is formed is a light receiving surface.

Further, as shown in FIG. 2, the first electrode 170 may be a grid electrode, and both surfaces may be light receiving surfaces. In that case, a light-transmitting conductive film 180 is preferably provided between the fourth semiconductor layer 140 and the first electrode 170.

Further, as shown in FIG. 3, the fourth semiconductor layer 140 may be formed on the silicon substrate 100 without providing the third semiconductor layer 130. In the case where the passivation effect on the silicon surface by the fourth semiconductor layer 140 is high, the third semiconductor layer 130 can be omitted.

Further, FIG. 1 shows an example in which unevenness processing is performed on the front and back of the silicon substrate 100. The incident light undergoes multiple reflections on the uneven surface, and the light travels obliquely within the photoelectric conversion region, so that the optical path length increases. In addition, a so-called light confinement effect in which the back surface reflected light is totally reflected on the front surface can be caused.

In addition, as illustrated in FIG. 4, a configuration in which unevenness processing is performed on only one of the front and back sides of the silicon substrate 100 may be employed. While the above-mentioned optical effect can be obtained by uneven processing, the surface area of the silicon substrate increases, so that the absolute amount of surface defects increases. Therefore, in consideration of the balance between the optical effect and the amount of surface defects, the practitioner may determine the structure so as to obtain better electrical characteristics.

In addition, the structure which combined each structure of FIG.1, FIG.2, and FIG. 4 arbitrarily, or FIG.
The configurations shown in FIGS. 3 and 4 may be arbitrarily combined.

As the silicon substrate 100, a single crystal silicon substrate or a polycrystalline silicon substrate can be used. However, in one embodiment of the present invention, an n-type single crystal silicon substrate is preferably used. A single crystal silicon substrate in which impurities are reduced as much as possible contains a considerable amount of impurities, and carriers are trapped in the level formed by the impurities. In comparison between the p-type single crystal silicon substrate and the n-type single crystal silicon substrate in which the concentration of the impurity is sufficiently small and similar, the electron capture cross section is larger than the hole capture cross section. An n-type silicon substrate that is a minority carrier has a longer lifetime.

However, in a general single crystal silicon substrate, a p-type single crystal silicon substrate using electrons as minority carriers has a larger diffusion length. Therefore, when an n-type single crystal silicon substrate is used, it is preferable to reduce the substrate thickness in consideration of the diffusion length. However, if the substrate thickness is reduced, the light utilization efficiency is lowered, and there is a problem that the short-circuit current density is lowered.

In order to increase the diffusion length of the n-type single crystal silicon substrate without reducing the substrate thickness, it is necessary to reduce impurities and defects as much as possible. In one embodiment of the present invention, a low oxygen concentration n-type single crystal silicon substrate is used. For example, the oxygen concentration is 8 × 10 ¹⁷ atoms / cm ³ or less, preferably 5 × 10 ¹⁷ atoms / cm ³ or less, more preferably 3 × 10 ¹⁷ atoms / c.
An n-type single crystal silicon substrate of m ³ or less is used. Here, oxygen in single crystal silicon refers to interstitial oxygen. Such a low oxygen concentration silicon wafer is FZ (Floating).
Zone) method and MCZ (Magnetic field applied Czoch)
ralski) method or the like. The oxygen concentration can be determined by Fourier transform infrared spectroscopy (conversion factor: 4.81 × 10 ¹⁷ / cm ² ).

As the first semiconductor layer 110 and the third semiconductor layer 130, a silicon semiconductor layer containing few defects containing hydrogen can be used, and defects on the surface of the silicon substrate 100 can be terminated. For example, amorphous silicon formed by a plasma CVD method can be used for the first semiconductor layer 110 and the third semiconductor layer 130.

If the conductivity type of the silicon substrate 100 is n-type, the first semiconductor layer 110 includes an i-type or n-type silicon layer having a carrier concentration lower than that of the silicon substrate 100, and the third semiconductor layer 13.
For 0, an i-type or p-type silicon layer can be used.

Note that in this specification, an i-type semiconductor includes not only a so-called intrinsic semiconductor whose Fermi level is located in the center of a band gap but also an impurity imparting p-type and an impurity imparting n-type contained in the semiconductor. A semiconductor having a concentration of 1 × 10 ¹⁸ cm ⁻³ or less and high photoconductivity with respect to dark conductivity.

Note that in this specification, when it is necessary to distinguish materials having the same conductivity type and different carrier concentrations, the conductivity type of an n-type material or p-type material having a relatively high carrier concentration is defined as n ⁺ type or p ^+.
The conductivity type of the n-type material or p-type material having a relatively low carrier concentration is referred to as n ^- type or p ^- type.

In the case where an n ^- type silicon layer is used for the first semiconductor layer 110, it is preferable to use an n ⁻ -type silicon layer. At this time, the dark conductivity of the n ⁻ -type silicon layer is 1 × 10 ⁻⁹ S / cm.
˜1 × 10 ⁻⁴ S / cm, preferably 1 × 10 ⁻⁸ S / cm to 1 × 10 ⁻⁵ S / cm, more preferably 1 × 10 ⁻⁸ S / cm to 1 × 10 ⁻⁶ S / cm And

In the case where a p ^- type silicon layer is used for the third semiconductor layer 130, it is preferable to use a p ⁻ -type silicon layer. At this time, the dark conductivity of the p ⁻ type silicon layer is 1 × 10 ⁻¹⁰ S / c.
m to 1 × 10 ⁻⁵ S / cm, preferably 1 × 10 ⁻⁹ S / cm to 1 × 10 ⁻⁶ S / cm,
More preferably, it is 1 × 10 ⁻⁹ S / cm to 1 × 10 ⁻⁷ S / cm.

In one embodiment of the present invention, a silicon layer containing argon is used for the first semiconductor layer 110 and the third semiconductor layer 130. By forming the silicon layer as a passivation layer on the surface of the silicon substrate using a source gas containing argon, surface defects of the silicon substrate can be reduced as much as possible.

FIG. 5 is a diagram illustrating the lifetime of a sample in which amorphous silicon is formed on both surfaces of an n-type single crystal silicon substrate as a passivation layer using a source gas containing argon. The amorphous silicon is formed by plasma CVD using a source gas (argon: monosilane = 1) in a reaction chamber.
: (0-1)), the pressure in the reaction chamber is 160 Pa, the electrode spacing is 17 mm or less, the power density based on the area of the cathode electrode is 40 mW / cm ² (RF power supply 60 MHz), and the substrate temperature is 220 ° C. The film is formed to a thickness of 100 nm on an n-type single crystal silicon substrate having a resistivity of about 9 Ω · cm under the following conditions. The lifetime is μPCD (microwave d).
Measured using the detected photoconductivity decay method.

As shown in FIG. 5, the lifetime tends to change to have a maximum value by changing the argon ratio in the source gas. That is, it can be seen that the argon ratio in the source gas has an appropriate range. Based on a sample formed without adding argon, the flow rate ratio X of raw material gas (X = argon flow rate / monosilane flow rate) is preferably 0 <X <0.8 (value greater than 0 and less than 0.8), 0.1 ≦ X ≦ 0.7 (value of 0.1 or more and 0.7 or less) is more preferable, and 0.1 ≦ X ≦ 0.6 (value of 0.1 or more and 0.6 or less) is more preferable. I can say that.

In the case where a source gas containing argon is used, the film formation surface is appropriately covered with argon, and plasma damage from monosilane that has been turned into plasma can be mitigated. However, in the case of a source gas containing a large amount of argon, it is preferable to add an amount of argon in an appropriate range described above because plasma damage is caused to the film formation surface by the argon itself.

FIG. 6 shows a thermal desorption gas analysis (TDS: Thermal Destruction Sp).
It is the result of investigating the behavior of argon (m / z = 40) in a sample in which an amorphous silicon layer was formed on a glass substrate using (electrometry). For the sample to be compared, sample A formed using only monosilane as a source gas and sample B formed using a source gas having a ratio of argon / monosilane = 0.25 are used. In sample A, argon is not detected, and in sample B, it can be seen that argon is detected at a temperature rise of about 300 ° C. to 500 ° C.

FIG. 7 shows the results of TDS analysis and lifetime measurement of a plurality of samples with different amounts of argon added, and examining the relationship between the argon concentration in the amorphous silicon layer and the lifetime. Note that the argon concentration in the amorphous silicon layer is determined by TDS analysis from room temperature (25 ° C.) to 600 ° C.
And calculated from the total amount of argon (m / z = 40) released in the meantime, the sample area, and the film thickness of the sample. The lifetime is expressed as a relative value normalized with the lifetime of an n-type single crystal silicon substrate subjected to chemical passivation with iodine alcohol solution as 1.

Similar to FIG. 5, the lifetime changes to have a maximum value, and it can be seen that the argon concentration in the film has an appropriate range. Based on the sample of chemical passivation, the argon concentration in the film is 1.2 × 10 ¹⁸ atoms / cm ³ or more and 2.2 × 10 ¹⁸ atoms.
ms / cm ³ or less is preferable, 1.3 × 10 ¹⁸ atoms / cm ³ or more and 2.1 × 10 ^1
It can be said that ⁸ atoms / cm ³ or less is more preferable. Argon contained in the film does not form a bond with silicon, and when it is in an appropriate amount, it has effects such as stress relaxation of the film and acts to improve the quality of the passivation layer. However, when the amount of argon contained in the film is larger than the above value, problems such as inducing film stress, inhibiting bonding between silicon, and forming impurity levels may occur.
The quality as a passivation layer will be reduced.

In one embodiment of the present invention, it is preferable to reduce impurity elements contained in the first semiconductor layer 110 and the third semiconductor layer 130 as much as possible. In a silicon layer or the like formed by a plasma CVD method or the like, atmospheric components and cleaning gas components remaining in the deposition chamber are easily taken into the film as impurities even if the source gas is highly pure. These impurities form impurity levels in the energy gap, and have an adverse effect such as carrier trapping.

According to the results of experiments conducted by the inventors, for atmospheric components such as nitrogen and oxygen, the concentration in the film is 1 × 10.
^It has been found that the influence can be almost eliminated by setting it to ¹⁷ atoms / cm ³ or less. It has also been found that the concentration of fluorine, which is a component of the cleaning gas, in the film is preferably less than or equal to the concentration of nitrogen and / or oxygen in the film.

The above-described silicon layer containing argon is formed using the first semiconductor layer 110 and the third semiconductor layer 130.
As described above, the lifetime of the silicon substrate can be improved and a photoelectric conversion device with favorable electrical characteristics can be formed. In particular, when unevenness is provided on the surface of the silicon substrate, the effect becomes remarkable.

The second semiconductor layer 120 has the same conductivity type as that of the silicon substrate 100 and has a higher carrier density than the silicon substrate. For example, the second semiconductor layer 120 can be formed using amorphous silicon or microcrystalline silicon to which an n-type impurity is added.

In one embodiment of the present invention, when the silicon substrate 100 is n-type, the silicon substrate 10
An n−n ⁺ junction is formed between the zero and the second semiconductor layer 120 with the first semiconductor layer 110 interposed therebetween. That is, the second semiconductor layer 120 includes a BSF layer (Back Surface F).
iield layer). By forming the BSF layer, minority carriers are bounced back to the pn junction side, so that carrier recombination in the vicinity of the first electrode 170 can be prevented.

The fourth semiconductor layer 140 has a conductivity type opposite to that of the silicon substrate 100, and has a higher carrier density than the third semiconductor layer 130. When the silicon substrate 100 is n-type, the fourth semiconductor layer 140 is p-type (p ⁺ -type), and the third semiconductor layer 130 is interposed between the silicon substrate 100 and the fourth semiconductor layer 140. Thus, a pn junction is formed. For example, the fourth semiconductor layer 140 can be formed using amorphous silicon or microcrystalline silicon to which an impurity that becomes p-type is added.

Next, a method for manufacturing the photoelectric conversion device illustrated in FIG. 1 is described with reference to FIGS.

In this embodiment, the oxygen concentration formed on the silicon substrate 100 by the MCZ method is 8 × 10 ¹⁷ a.
An n-type single crystal silicon substrate of toms / cm ³ or less is used. Note that in the case where uneven processing is performed on the front and back surfaces, it is preferable to use a substrate having a (100) plane on the surface of a single crystal silicon substrate.

Next, uneven processing is performed on the front and back of the silicon substrate 100. In addition, the following description is (10
The present invention can be applied to the case where a single crystal silicon substrate having a (0) plane is used as the silicon substrate 100. In the case where a polycrystalline silicon substrate is used as the silicon substrate 100, the concavo-convex process may be performed by a dry etching method or the like.

When the initial silicon substrate 100 is a substrate that is only sliced, the silicon substrate 100
The damaged layer remaining at 10 to 20 μm from the surface is removed by a wet etching process. As the etching solution, a relatively high concentration alkaline solution, for example, a 10 to 50% sodium hydroxide aqueous solution or a potassium hydroxide aqueous solution having the same concentration can be used. Alternatively, a mixed acid in which hydrofluoric acid and nitric acid are mixed, or a mixed acid in which acetic acid is mixed with them may be used.

Next, the impurities adhering to the silicon substrate surface after removing the damaged layer are removed by acid cleaning.
As the acid, for example, a mixed solution (FPM) of 0.5% hydrofluoric acid and 1% hydrogen peroxide water can be used. Alternatively, RCA cleaning or the like may be performed. This acid cleaning step may be omitted.

The unevenness is formed by utilizing the difference in etching rate with respect to the plane orientation in etching with an alkaline solution of crystalline silicon. The etching solution contains a relatively low concentration alkaline solution,
For example, a 1 to 5% aqueous sodium hydroxide solution or an aqueous potassium hydroxide solution having the same concentration can be used, and preferably several percent of isopropyl alcohol is added. The temperature of the etching solution is 70 to 90 ° C., and the silicon substrate is immersed in the etching solution for 30 to 60 minutes.
By this treatment, the surface of the silicon substrate 100 can be formed with irregularities comprising a plurality of fine convex portions having a substantially quadrangular pyramid shape and concave portions formed between adjacent convex portions.

Next, in the etching process for forming the unevenness described above, since a non-uniform oxide layer is formed on the surface layer of the silicon substrate 100, the oxide layer is removed. Moreover, since the components of the alkaline solution are likely to remain in the oxide layer, there is also an object to remove them. When an alkali metal such as Na ion or K ion enters silicon, the lifetime is deteriorated, and the electrical characteristics of the photoelectric conversion device are remarkably deteriorated. In order to remove the oxide layer, 1 to 5% dilute hydrofluoric acid may be used.

Next, it is preferable that the surface of the silicon substrate 100 be etched using a mixed acid obtained by mixing hydrofluoric acid and nitric acid, or a mixed acid obtained by mixing acetic acid with them to remove impurities such as metal components. By mixing acetic acid, it is possible to maintain the oxidizing power of nitric acid, stabilize the etching process, and adjust the etching rate. For example, the volume ratio of each acid is hydrofluoric acid:
Nitric acid: acetic acid = 1: (1.5-3) :( 2-4). In the present specification, a mixed acid solution of hydrofluoric acid, nitric acid and acetic acid is referred to as fluorinated acetic acid. Further, in the etching process using this fluorinated acetic acid, the angle in the cross section at the apex of the convex portion is changed in the increasing direction, so that the surface area can be reduced and the absolute amount of surface defects can be reduced. Note that in the case of performing etching using this fluorinated acetic acid, the step of removing the oxide layer using dilute hydrofluoric acid can be omitted. Through the steps so far, the cross-sectional shape of the silicon substrate 100 shown in FIG.

Next, after appropriate cleaning, the first semiconductor layer 110 is formed on one surface of the silicon substrate 100 by using a plasma CVD method. The thickness of the first semiconductor layer 110 is 3 nm or more and 100 nm.
The following is preferable. In this embodiment, the first semiconductor layer 110 is an i-type amorphous silicon layer to which argon is added and has a thickness of 5 nm.

In the first semiconductor layer 110, for example, a source gas (argon and monosilane) is introduced into the reaction chamber, the pressure in the reaction chamber is 100 Pa to 200 Pa, and the electrode interval is 10 mm to 40 m.
m or less, the power density based on the area of the cathode electrode is 8 mW / cm ² or more and 120 mW / c
m ² or less, and the substrate temperature can be set to 150 ° C. or higher and 300 ° C. or lower. As described above, the flow rate ratio X (X of argon and monosilane in the raw material gas introduced into the reaction chamber
= Argon flow rate / monosilane flow rate) is preferably 0 <X <0.8. Note that hydrogen or the like may be added to the source gas as long as the flow rate ratio is observed. In order to make the first semiconductor layer 110 an n ⁻ type silicon layer, a gas containing an n type dopant such as phosphine may be added to the source gas.

Next, the second semiconductor layer 120 is formed over the first semiconductor layer 110 (see FIG. 8B).
. The thickness of the second semiconductor layer 120 is preferably 3 nm to 100 nm. In this embodiment mode, the second semiconductor layer 120 is n-type (n ⁺ -type) amorphous silicon and has a thickness of 10 nm.

The second semiconductor layer 120 may be formed, for example, in a reaction chamber with monosilane and hydrogen-based phosphine (
0.5%) at a flow rate ratio of 1: (1-50), and the pressure in the reaction chamber is 100 Pa or more 2
And 00Pa or less, the electrode interval is 10mm or more 40mm or less, the power density relative to the area of the cathode electrode 8 mW / cm ² or more 120 mW / cm ² or less, is formed under the condition that a substrate temperature of 0.99 ° C. or higher 300 ° C. or less be able to.

Next, a third semiconductor layer 130 is formed on the other surface of the silicon substrate 100 by using a plasma CVD method. The thickness of the third semiconductor layer 130 is preferably 3 nm to 100 nm. In this embodiment, the third semiconductor layer 130 is an i-type amorphous silicon layer to which argon is added and has a thickness of 5 nm.

The third semiconductor layer 130 can be formed under conditions similar to those of the first semiconductor layer 110. In order to make the third semiconductor layer 130 into a p ⁻ type silicon layer, a gas containing a p type dopant such as diborane may be added to the source gas.

Next, the fourth semiconductor layer 140 is formed over the third semiconductor layer 130 (see FIG. 8C).
. The thickness of the fourth semiconductor layer 140 is preferably 3 nm to 100 nm. In this embodiment, the fourth semiconductor layer 140 is p-type (p ⁺ -type) amorphous silicon and has a thickness of 10 nm.

For example, the fourth semiconductor layer 140 may include monosilane and hydrogen-based diborane (0
. 1%) is introduced at a flow rate ratio of 1: (2 to 50), and the pressure in the reaction chamber is increased to 100 Pa or more and 20
And 0Pa less, the electrode interval is less than 8mm 40mm or less, the power density relative to the area of the cathode electrode 8 mW / cm ² or more 50 mW / cm ² or less, the substrate temperature 0.99 ° C. or higher 30
It can be formed under conditions of 0 ° C. or less.

Note that in this embodiment mode, an RF power source having a frequency of 60 MHz with high decomposition efficiency of the source gas is preferably used as the power source used for forming the silicon layer. By increasing the decomposition efficiency of the source gas, it becomes easier to terminate dangling bonds on the silicon surface. However, 13.56MH
An RF power source of z, 27.12 MHz, or 100 MHz may be used. Further, not only continuous discharge but also pulse discharge may be used. ON / OFF control or High /
By performing low-control pulse discharge, the film quality can be improved and particles generated in the gas phase can be reduced.

Next, the first electrode 170 is formed over the second semiconductor layer 120 (see FIG. 9A). The first electrode 170 can be formed using a low-resistance metal such as silver, aluminum, or copper, and can be formed by a sputtering method, a vacuum evaporation method, or the like. Or, using screen printing,
You may form with conductive resin, such as silver paste and copper paste.

Next, a light-transmitting conductive film 160 is formed over the fourth semiconductor layer 140 by a sputtering method (FIG. 9B
)reference). The light-transmitting conductive film 160 includes, for example, indium tin oxide, indium tin oxide containing silicon, indium oxide containing zinc, zinc oxide, zinc oxide containing gallium, zinc oxide containing aluminum, tin oxide, or fluorine. Tin oxide containing, tin oxide containing antimony, graphene, or the like can be used. Further, the translucent conductive film 160 is not limited to a single layer, and may be a stack of different films. For example, a stack of zinc oxide containing indium tin oxide and aluminum,
A stack of indium tin oxide and tin oxide containing fluorine can be used. The total thickness is 10 nm or more and 1000 nm or less.

Note that the order of forming the films provided on the front and back sides of the silicon substrate 100 is not limited to the above method, and FIG.
It is sufficient if the structure shown in B) can be formed. For example, the first semiconductor layer 110 may be formed, and then the third semiconductor layer 130 may be formed.

Next, using a screen printing method, a conductive resin is supplied over the light-transmitting conductive film 160 and baked to form the second electrode 190. As the conductive resin used here, a silver paste, a copper paste, a nickel paste, a molybdenum paste, or the like can be used. The second electrode 190 may be a stack of different materials, such as a stack of silver paste and copper paste. The conductive resin may be supplied by a dispensing method or an ink jet method.

Note that in order to form the photoelectric conversion device having the structure in FIG. 2, the light-transmitting conductive film 180 is provided over the second semiconductor layer 120, and the first electrode 170 is formed in a grid shape in the shape of the light-transmitting conductive film. What is necessary is just to perform the process to form.

In addition, in order to form the photoelectric conversion device having the structure of FIG. 3, the step of forming the third semiconductor layer 130 may be omitted.

In addition, in order to form the photoelectric conversion device having the structure shown in FIG.

Through the above, the photoelectric conversion device which is one embodiment of the present invention can be manufactured.

This embodiment can be freely combined with any of the other embodiments and examples.

(Embodiment 2)
In this embodiment, a photoelectric conversion device which is different from that in Embodiment 1 and a manufacturing method thereof will be described. Details of points common to the first embodiment are omitted.

The photoelectric conversion device described in this embodiment is different in only the constituent material of the fourth semiconductor layer 140 in the configuration in FIGS. 1 to 4 described in Embodiment 1, and the other is the same.

Note that in the photoelectric conversion device described in this embodiment, the structures in FIGS. 1, 2, and 4 are arbitrarily combined, or the structures in FIGS. 2, 3, and 4 are arbitrarily combined. It is good also as a structure compounded.

The fourth semiconductor layer 140 of the photoelectric conversion device described in this embodiment has a band gap of 2 eV.
As described above, an oxide semiconductor layer mainly containing a transition metal oxide of 2.5 eV or more can be used. In particular, an oxide of a metal belonging to Groups 4 to 8 in the periodic table is preferable. The metal oxide has high translucency in a wavelength range where silicon absorbs light.

Specifically, vanadium oxide, niobium oxide, tantalum oxide, chromium oxide, molybdenum oxide, tungsten oxide, manganese oxide, rhenium oxide, or the like can be used for the oxide semiconductor layer. In particular, molybdenum oxide is stable in the air, has low hygroscopicity,
It is preferable because it is easy to handle.

The conductivity type of the oxide semiconductor layer can be changed by adding an impurity. In the oxide semiconductor, even when no impurity is intentionally added, a defect in a metal oxide or a small amount of impurities taken in during a film formation process forms a donor level or an acceptor level. Type or p-type conductivity.

For example, molybdenum trioxide powder (4N MOO03PB) manufactured by High Purity Chemical Laboratory Co., Ltd. is placed in a tungsten boat (BB-3) manufactured by Furuuchi Chemical Co., Ltd. under a vacuum of 1 × 10 ⁻⁴ Pa or less.
When resistance heating vapor deposition is performed on a silicon substrate at a deposition rate of 0.2 nm / second, elements having different IV characteristics are formed due to the difference in conductivity type of the silicon substrate. FIG. 10A shows IV characteristics of an element in which a molybdenum oxide film is formed by the above method on an n-type silicon substrate, and FIG. 10B shows a p-type silicon substrate. Since FIG. 10A shows rectification and FIG. 10B shows ohmic property, it can be said that a pn junction is formed in the element having the characteristics shown in FIG. Therefore, it can be seen that the conductivity type of the molybdenum oxide film formed by the above method is p-type.

The electric conductivity of the molybdenum oxide film formed by the above evaporation method is 2 × 10 ^{−6 to} 3
. 8 × 10 ⁻³ S / cm (dark conductivity), refractive index 1.6 to 2.2 (wavelength 550 nm), extinction coefficient 6 × 10 ^{−4 to} 3 × 10 ⁻³ (wavelength 550 nm), from Tauc plot The obtained band gap was 2.8 to 3 eV.

The oxide semiconductor layer has a high passivation effect, can reduce defects on the silicon surface, and can improve carrier lifetime.

For example, the carrier lifetime when molybdenum oxide is deposited on both surfaces of an n-type single crystal silicon substrate having a resistivity of about 9 Ω · cm and used as a passivation layer is about 400 μsec. ΜPCD (microwave detected photoconductor
(ivity decay) method.

FIG. 11 is a comparison of light absorption coefficients of a molybdenum oxide film formed on a glass substrate by the above evaporation method and an amorphous silicon film formed by a plasma CVD method. It can be seen that the molybdenum oxide film has a small light absorption coefficient in a wide wavelength range.

As described above, the fourth semiconductor layer 140 is formed using an oxide semiconductor layer having a small light absorption coefficient in a wide wavelength range.
As a result, the light absorption loss in the window layer of the photoelectric conversion device is reduced, and the photoelectric conversion can be efficiently performed in the light absorption region.

As described above, the oxide semiconductor layer used for the fourth semiconductor layer 140 has a high passivation effect for reducing defects on the silicon surface. Therefore, the photoelectric conversion device in this embodiment preferably has a structure including the structure in FIG. 3 in which the third semiconductor layer 130 is not particularly necessary.

The photoelectric conversion device in this embodiment can be manufactured using the steps described in Embodiment 1 with reference to FIGS. 8 and 9 except for the fourth semiconductor layer 140.

In addition, the above-described oxide semiconductor layer can be formed as the fourth semiconductor layer 140 by a vapor phase method such as an evaporation method, a sputtering method, or an ion plating method. The film thickness is preferably 10 to 100 nm.

For example, in the case where p-type molybdenum oxide is formed as the fourth semiconductor layer 140, a vapor deposition method includes a method of vapor-depositing a molybdenum oxide material alone or a method of co-evaporating a molybdenum oxide material and an impurity imparting p-type conductivity. Use it. Co-evaporation is an evaporation method in which evaporation is simultaneously performed from a plurality of evaporation sources in one processing chamber. In the sputtering method, molybdenum oxide, molybdenum, or a material containing an impurity imparting p-type conductivity to the target is used as a target, and oxygen or a mixed gas of oxygen and a rare gas such as argon is used as a sputtering gas. May be used. In the ion plating method, a film may be formed in a plasma containing oxygen using a material similar to that of the sputtering method.

This embodiment can be freely combined with any of the other embodiments and examples.

In this embodiment, cell characteristics of a photoelectric conversion device will be described.

The photoelectric conversion device described in this example has the structure illustrated in FIG. 1 and was manufactured using the materials and methods described in the manufacturing method of Embodiment 1. The cell size is 132.25 cm ² , and the measurement is simulated sunlight (AM1.5, irradiation intensity is 1) generated by a solar simulator.
00 mW / cm ² ) was used.

FIG. 12 shows a cell A in which the argon / monosilane flow ratio is 0 and a cell B in which the argon / monosilane flow ratio is 0.25 in the manufacturing process of the passivation layers (the first semiconductor layer 110 and the third semiconductor layer 130). It is the figure which compared the IV characteristic with these.

In comparison between cell A and cell B, it can be seen that the open circuit voltage and the fill factor of cell B are particularly good. That is, it can be seen that the improvement of the lifetime due to the addition of argon to the passivation layer contributes to the improvement of the electrical characteristics of the photoelectric conversion device.

This embodiment can be freely combined with any of the other embodiments.

100 Silicon substrate 110 First semiconductor layer 120 Second semiconductor layer 130 Third semiconductor layer 140 Fourth semiconductor layer 160 Translucent conductive film 170 First electrode 180 Translucent conductive film 190 Second electrode

Claims (1)

a first step of preparing a silicon substrate having n-type conductivity;
A second step of forming a first semiconductor layer having an n-type conductivity and having a carrier concentration lower than that of the silicon substrate on one surface of the silicon substrate;
A third step of forming, on the first semiconductor layer, a second semiconductor layer having an n-type conductivity type and having a carrier concentration higher than that of the silicon substrate;
A fourth step of forming a third semiconductor layer having a p-type conductivity type on the other surface of the silicon substrate;
A fifth step of forming, on the third semiconductor layer, a fourth semiconductor layer having a p-type conductivity and having a carrier concentration higher than that of the third semiconductor layer;
A sixth step of forming a translucent conductive film on the fourth semiconductor layer;
A seventh step of forming a first electrode on the second semiconductor layer;
An eighth step of forming a second electrode on the translucent conductive film;
Have
The first semiconductor layer, the second semiconductor layer, and the third semiconductor layer have silicon,
The fourth semiconductor layer is formed of molybdenum oxide;
In the second step and the fourth step, plasma CVD under the condition that the source gas contains argon and monosilane and the flow ratio X (X = argon flow rate / monosilane flow rate) of the two is 0 <X <0.8. A method for manufacturing a photoelectric conversion device, which is performed by a method.

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