JP6142215B2 - Back grind tape - Google Patents
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- JP6142215B2 JP6142215B2 JP2012189603A JP2012189603A JP6142215B2 JP 6142215 B2 JP6142215 B2 JP 6142215B2 JP 2012189603 A JP2012189603 A JP 2012189603A JP 2012189603 A JP2012189603 A JP 2012189603A JP 6142215 B2 JP6142215 B2 JP 6142215B2
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Description
本発明は、シリコンウエハ等の半導体ウエハを研削・研磨する際に、研削機の真空チャックテーブル（回路形成面）に半導体ウエハを固定する用途に用いられるバックグラインドテープに関する。 The present invention relates to a back grind tape used for fixing a semiconductor wafer to a vacuum chuck table (circuit formation surface) of a grinding machine when a semiconductor wafer such as a silicon wafer is ground and polished.
ＩＣチップ、ＬＳＩ等の半導体装置の製造工程において、回路パターン形成後の半導体ウエハは、通常その厚さを薄くするため、研削・研磨、エッチング等の処理が施され、研削・研磨の際には半導体ウエハ表面の回路パターンを保護したり、半導体ウエハの破損を防止する目的で、回路パターン面に粘着シート類（バックグラインドテープ）を貼り付けている。 In the manufacturing process of a semiconductor device such as an IC chip or LSI, a semiconductor wafer after forming a circuit pattern is usually subjected to processing such as grinding / polishing and etching in order to reduce its thickness. For the purpose of protecting the circuit pattern on the surface of the semiconductor wafer and preventing damage to the semiconductor wafer, an adhesive sheet (back grind tape) is attached to the circuit pattern surface.
また、近年、ＩＣチップの用途が広がるにつれて、ＩＣカード類に用いたり、積層して使用したりすることができる厚さ３０μｍ以下の極めて薄い半導体ウエハが要求されるようになってきた。しかしながら、厚さが３０μｍ以下の半導体ウエハは、従来の厚さが１００〜６００μｍ程度の半導体ウエハに比べて反りが大きく、衝撃により割れやすくなるので取扱性に劣り、また、研削・研磨後の半導体ウエハからバックグラインドテープを剥離する際には、半導体ウエハが破損する場合があった。 Further, in recent years, as the use of IC chips has expanded, there has been a demand for extremely thin semiconductor wafers having a thickness of 30 μm or less that can be used for IC cards or stacked. However, semiconductor wafers with a thickness of 30 μm or less are more warped than conventional semiconductor wafers with a thickness of about 100 to 600 μm, and are less susceptible to handling because they are easily broken by impact, and semiconductors after grinding and polishing When peeling the back grind tape from the wafer, the semiconductor wafer may be damaged.
これに対して、特許文献１では、半導体ウエハの回路パターン面と貼り合わせる密着シートとして、粘着剤を用いた粘着層の代わりに、半導体ウエハからの剥離が容易となるような特定のシリコーン材料からなる密着層が提案されている。 On the other hand, in patent document 1, instead of the adhesive layer using an adhesive as a contact sheet to be bonded to the circuit pattern surface of the semiconductor wafer, a specific silicone material that facilitates peeling from the semiconductor wafer is used. An adhesion layer has been proposed.
しかしながら、これら従来のバックグラインドテープは、３０μｍ以下の極めて薄い半導体ウエハを研削・研磨する際に、研削機の真空チャックテーブルの溝や孔による段差が半導体ウエハ表面に影響を与えて、均一な表面研削ができない。具体的には、ＴＴＶ値（ウエハ裏面を基準面として厚み方向に測定した高さのウエハ全面における最大値と最小値の差）が３μｍ以下にできないといった問題や研削・研磨後に研削機の真空チャックテーブルから半導体ウエハをバックグラインドテープとともに剥がす際に、半導体ウエハが破損するといった問題があった。
However, when these conventional back grind tapes grind and polish an extremely thin semiconductor wafer of 30 μm or less, the steps due to the grooves and holes of the vacuum chuck table of the grinding machine affect the surface of the semiconductor wafer, resulting in a uniform surface. Can't grind. Specifically, there is a problem that the TTV value (difference between the maximum value and the minimum value of the height measured in the thickness direction with the back surface of the wafer as a reference surface) cannot be 3 μm or less, and the vacuum chuck of the grinding machine after grinding / polishing. When the semiconductor wafer is peeled off together with the back grind tape from the table, the semiconductor wafer is damaged.
本発明は、上記現状に鑑み、３０μｍ以下の極めて薄い半導体ウエハの研削・研磨工程において、研削・研磨時には研削機の真空チャックテーブルの溝や孔による段差を吸収して、半導体ウエハ表面を均一に研削・研磨できるバックグラインドテープを提供することを目的とする。 In view of the above-described situation, the present invention absorbs a step due to a groove or a hole of a vacuum chuck table of a grinding machine in a grinding / polishing process of an extremely thin semiconductor wafer of 30 μm or less to make the surface of the semiconductor wafer uniform. The object is to provide a back grind tape that can be ground and polished.
第１発明は、基材フィルムの片面にシリコーン樹脂からなる吸着層が設けられ、反対面にメタクリル酸メチル（ＭＭＡ）とアクリル酸ブチル（ＢＡ）のブロック共重合体からなる段差吸収層が設けられ、前記メタクリル酸メチル（ＭＭＡ）とアクリル酸ブチル（ＢＡ）のブロック共重合体の重量比が２５：７５〜４５：５５であり、前記段差吸収層の厚みは１０μｍ以上３０μｍ以下であり、前記吸着層は半導体ウエハ表面の回路パターンと貼合され、前記段差吸収層は研削機の真空チャックテーブル面と貼合されることを特徴とするバックグラインドテープである。 In the first invention, an adsorption layer made of a silicone resin is provided on one side of a base film, and a step absorption layer made of a block copolymer of methyl methacrylate (MMA) and butyl acrylate (BA) is provided on the opposite side. The weight ratio of the block copolymer of methyl methacrylate (MMA) and butyl acrylate (BA) is 25:75 to 45:55, and the thickness of the step absorption layer is 10 μm or more and 30 μm or less. The layer is bonded to a circuit pattern on the surface of a semiconductor wafer, and the step absorption layer is bonded to a vacuum chuck table surface of a grinding machine .
第２発明は、前記吸着層の厚みが５〜５０μｍであることを特徴とする第１発明に記載のバックグラインドテープである。 The second invention, the thickness of the adsorption layer is a back grinding tape of the first shot bright in serial mounting, which is a 5 to 50 [mu] m.
本発明によれば、３０μｍ以下の極めて薄い半導体ウエハの研削・研磨工程において、研削・研磨時には研削機の真空チャックテーブルの溝や孔による段差を吸収して、半導体ウエハ表面を均一に研削・研磨できるバックグラインドテープを提供することができる。 According to the present invention, in a grinding / polishing process of an extremely thin semiconductor wafer of 30 μm or less, a level difference due to a groove or a hole of a vacuum chuck table of the grinding machine is absorbed during grinding / polishing, so that the surface of the semiconductor wafer is uniformly ground / polished. Can be provided.
本発明のバックグラインドテープは、基材フィルムの片面に吸着層、もう一方の面に段差吸収層が形成されてなるものである。吸着層は半導体ウエハ表面の回路パターンと貼合され、段差吸収層は研削機の真空チャックテーブル面と貼合される。 The back grind tape of the present invention is formed by forming an adsorption layer on one side of a base film and a step absorption layer on the other side. The adsorption layer is bonded to the circuit pattern on the surface of the semiconductor wafer, and the step absorption layer is bonded to the vacuum chuck table surface of the grinding machine.
基材フィルムとしては、ポリエチレンテレフタレート（ＰＥＴ）、ポリプロピレン、ナイロン、ウレタン、ポリ塩化ビニリデン、ポリ塩化ビニル等からなる１層または多層構造のフィルムを使用することができる。基材フィルムの厚みは、通常１２〜２００μｍであり、好ましくは２５〜１００μｍである。 As the base film, a single layer or multilayer film made of polyethylene terephthalate (PET), polypropylene, nylon, urethane, polyvinylidene chloride, polyvinyl chloride, or the like can be used. The thickness of a base film is 12-200 micrometers normally, Preferably it is 25-100 micrometers.
基材フィルムの表面には吸着層、段差吸収層との密着性を向上させるため、コロナ放電処理、プラズマ処理、ブラスト処理、ケミカルエッチング処理、プライマー層塗工等を施してもよい。 The surface of the base film may be subjected to corona discharge treatment, plasma treatment, blast treatment, chemical etching treatment, primer layer coating, etc. in order to improve the adhesion with the adsorption layer and the step absorption layer.
吸着層に使用されるシリコーン樹脂としては、例えば、ラジカル重合型、縮合型、付加型、架橋型、又は開環重合型反応系シリコーン樹脂から選ばれる少なくとも１種のシリコーン樹脂を架橋させてなるものが挙げられ、特に付加型反応系シリコーン樹脂が好ましい。また、吸着層に使用されるシリコーン樹脂中には、吸着層表面の吸着性を向上させる目的で、ＭＱレジン類を含有してもよい。 Examples of the silicone resin used in the adsorption layer include those obtained by crosslinking at least one silicone resin selected from radical polymerization type, condensation type, addition type, crosslinking type, or ring-opening polymerization type reaction silicone resin. In particular, an addition-type reactive silicone resin is preferable. In addition, the silicone resin used for the adsorption layer may contain MQ resins for the purpose of improving the adsorptivity of the adsorption layer surface.
ここで架橋反応に用いる架橋剤は公知のものでよい。架橋剤の例としては、オルガノハイドロジェンポリシロキサンが挙げられる。 Here, a known crosslinking agent may be used for the crosslinking reaction. Examples of the crosslinking agent include organohydrogenpolysiloxane.
架橋反応に用いる白金系触媒は公知のものでよく、これには塩化第一白金酸、塩化第二白金酸などの塩化白金酸、塩化白金酸のアルコール化合物、アルデヒド化合物あるいは塩化白金酸と各種オレフィンとの鎖塩などが挙げられる。 The platinum-based catalyst used for the crosslinking reaction may be a known one, including chloroplatinic acid such as chloroplatinic acid and chloroplatinic acid, alcohol compounds of chloroplatinic acid, aldehyde compounds or chloroplatinic acid and various olefins. And chain salts.
吸着層の厚みは、５〜５０μｍが好ましい。さらに好ましくは、１５〜３５μｍであるとよい。吸着層の厚みが、５μｍ未満であると、半導体ウエハ表面の回路パターンに吸着しにくくなり、半導体ウエハに対するバックグラインドテープの剪断力が小さくなり、半導体ウエハの研削・研磨時にズレが発生する可能性が出てくる。吸着層の厚みが５０μｍを超えると、シリコーン樹脂の使用量が多くなりコスト上不経済となる。 The thickness of the adsorption layer is preferably 5 to 50 μm. More preferably, it is 15-35 micrometers. If the thickness of the adsorption layer is less than 5 μm, it will be difficult to adsorb to the circuit pattern on the surface of the semiconductor wafer, the shearing force of the back grind tape on the semiconductor wafer will be small, and misalignment may occur when grinding or polishing the semiconductor wafer Comes out. When the thickness of the adsorbing layer exceeds 50 μm, the amount of silicone resin used increases, which is uneconomical in terms of cost.
次に、段差吸収層に使用されるメタクリル酸メチル（以下、ＭＭＡ）とアクリル酸ブチル（以下、ＢＡ）のブロック共重合体としては、重量平均分子量（Ｍｗ）が４万〜１０万であり、ＭＭＡとＢＡの重量比が２５：７５〜４５：５５であるブロック共重合体が好ましい。重量平均分子量（Ｍｗ）が４万未満であると段差吸収層の粘性が強すぎて、研削・研磨後に研削機の真空チャックテーブルから半導体ウエハをバックグラインドテープとともに剥がしにくくなり、１０万を超えると段差吸収層の弾性が強すぎて、研削機の真空チャックテーブルの溝や孔による段差の吸収が不充分となる。又、ＭＭＡの重量比が２５：７５未満であると段差吸収層の粘性が強すぎて、段差吸収層が研削・研磨後に研削機の真空チャックテーブルから半導体ウエハをバックグラインドテープとともに剥がしにくくなり、４５：５５を超えると段差吸収層の弾性が強すぎて、研削機の真空チャックテーブルの溝や孔による段差の吸収が不充分となる。 Next, as a block copolymer of methyl methacrylate (hereinafter referred to as MMA) and butyl acrylate (hereinafter referred to as BA) used for the step absorption layer, the weight average molecular weight (Mw) is 40,000 to 100,000. A block copolymer having a weight ratio of MMA to BA of 25:75 to 45:55 is preferred. When the weight average molecular weight (Mw) is less than 40,000, the step absorption layer is too viscous, and after grinding and polishing, it becomes difficult to peel the semiconductor wafer together with the back grind tape from the vacuum chuck table of the grinding machine. The elasticity of the step absorption layer is too strong, and the step absorption by the grooves and holes of the vacuum chuck table of the grinding machine becomes insufficient. Also, if the weight ratio of MMA is less than 25:75, the viscosity of the step absorption layer is too strong, and it becomes difficult to peel the semiconductor wafer together with the back grind tape from the vacuum chuck table of the grinding machine after the step absorption layer is ground and polished. If it exceeds 45:55, the elasticity of the step absorption layer is too strong, and the step absorption by the grooves and holes of the vacuum chuck table of the grinding machine becomes insufficient.
段差吸収層の厚みは、５〜４５μｍが好ましい。さらに好ましくは、１０〜３０μｍであるとよい。段差吸収層の厚みが、５μｍ未満であると、研削機の真空チャックテーブルの溝や孔による段差の吸収が不充分となり、吸着層の厚みが４５μｍを超えると、段差吸収層が研削・研磨後に研削機の真空チャックテーブルから半導体ウエハをバックグラインドテープとともに剥がしにくくなるといった不具合を生じる。 The thickness of the step absorption layer is preferably 5 to 45 μm. More preferably, it is good in it being 10-30 micrometers. If the thickness of the step absorption layer is less than 5 μm, the step absorption by the grooves and holes of the vacuum chuck table of the grinding machine will be insufficient, and if the thickness of the adsorption layer exceeds 45 μm, the step absorption layer will be ground and polished. There arises a problem that it becomes difficult to peel the semiconductor wafer together with the back grind tape from the vacuum chuck table of the grinding machine.
以下、本発明を下記実施例によってさらに具体的に説明するが、勿論本発明の範囲はこれらによって限定されるものではない。なお、各実施例中「部」は特に断らない限り、「重量部」を示すものである。 Hereinafter, the present invention will be described more specifically with reference to the following examples. However, the scope of the present invention is of course not limited thereto. In each example, “part” means “part by weight” unless otherwise specified.
参考例１：
＜吸着層の作製＞５０μｍＰＥＴに、付加型反応系シリコーン樹脂（商品名「８５００」荒川化学工業（株）製）６０部、ＭＱレジン（商品名「ＳＱＴ−２２１」Ｇｅｌｅｓｔ社製）１０部、架橋剤（商品名「１２０３１」荒川化学工業（株）製）１．４部、白金触媒 （商品名「１２０７０」荒川化学工業（株）製）３部、トルオール３０部からなる塗工液を、グラビアコーターにて塗工後の硬化膜厚が２０μｍとなるよう塗工し、ドライヤー温度１５０℃、滞留時間１００秒で熱硬化し、吸着層を形成した。
Reference example 1 :
<Preparation of adsorption layer> To 50 μm PET, 60 parts of addition-type reactive silicone resin (trade name “8500” manufactured by Arakawa Chemical Industries, Ltd.), 10 parts of MQ resin (trade name “SQT-221” manufactured by Gelest), cross-linked A coating liquid consisting of 1.4 parts of an agent (trade name “12031” manufactured by Arakawa Chemical Industries, Ltd.), 3 parts of a platinum catalyst (trade name “12070” manufactured by Arakawa Chemical Industries, Ltd.) and 30 parts of toluol The coated film was coated with a coater so that the cured film thickness was 20 μm, and thermally cured at a dryer temperature of 150 ° C. and a residence time of 100 seconds to form an adsorption layer.
＜段差吸収層の作製＞
次いで吸着層と反対面に、メタクリル酸メチル（ＭＭＡ）とアクリル酸ブチル（ＢＡ）のブロック共重合体（商品名「クラリティＬＡ２２５０」（株）クラレ製）、ＭＭＡ：ＢＡ＝３２：６８（重量比）、Ｍｗ＝６．８万）３０部、メチルエチルケトン７０部からなる塗工液を、グラビアコーターにて塗工後の乾燥膜厚が５μｍとなるよう塗工し、ドライヤー温度１００℃で乾燥し、段差吸収層を形成した。
<Preparation of step absorption layer>
Next, on the surface opposite to the adsorption layer, a block copolymer of methyl methacrylate (MMA) and butyl acrylate (BA) (trade name “Clarity LA2250” manufactured by Kuraray Co., Ltd.), MMA: BA = 32: 68 (weight ratio) ), Mw = 68,000) A coating liquid consisting of 30 parts and 70 parts of methyl ethyl ketone was applied with a gravure coater so that the dry film thickness after coating was 5 μm, and dried at a dryer temperature of 100 ° C. A step absorption layer was formed.
実施例２：
参考例１で使用した吸着層の反対面に、参考例１で使用した段差吸収層塗工液をグラビアコーターにて塗工後の乾燥膜厚が１０μｍとなるよう塗工し、ドライヤー温度１００℃で乾燥し、段差吸収層を形成した。
Example 2:
On the opposite surface of the adsorption layer used in Reference Example 1 , the step-absorbing layer coating solution used in Reference Example 1 was applied with a gravure coater so that the dry film thickness after coating was 10 μm, and the dryer temperature was 100 ° C. And dried to form a step absorption layer.
実施例３：
参考例１で使用した吸着層の反対面に、参考例１で使用した段差吸収層塗工液をグラビアコーターにて塗工後の乾燥膜厚が３０μｍとなるよう塗工し、ドライヤー温度１００℃で乾燥し、段差吸収層を形成した。
Example 3:
On the opposite side of the adsorption layer used in Reference Example 1 , the step-absorbing layer coating solution used in Reference Example 1 was applied with a gravure coater so that the dry film thickness after coating was 30 μm, and the dryer temperature was 100 ° C. And dried to form a step absorption layer.
参考例２：
参考例１で使用した吸着層の反対面に、参考例１で使用した段差吸収層塗工液をグラビアコーターにて塗工後の乾燥膜厚が４５μｍとなるよう塗工し、ドライヤー温度１００℃で乾燥し、段差吸収層を形成した。
Reference example 2 :
On the opposite surface of the adsorption layer used in Reference Example 1 , the step-absorbing layer coating solution used in Reference Example 1 was applied with a gravure coater so that the dry film thickness after coating was 45 μm, and the dryer temperature was 100 ° C. And dried to form a step absorption layer.
参考例３：
参考例１で使用した吸着層の反対面に、段差吸収層としてメタクリル酸メチル（ＭＭＡ）とアクリル酸ブチル（ＢＡ）のブロック共重合体（商品名「クラリティＬＡ２１４０ｅ」（株）クラレ製）、ＭＭＡ：ＢＡ＝２２：７８（重量比）、Ｍｗ＝７．９万）３０部、メチルエチルケトン７０部からなる塗工液をグラビアコーターにて塗工後の乾燥膜厚が１０μｍとなるよう塗工し、ドライヤー温度１００℃で乾燥し、段差吸収層を形成した。
Reference Example 3 :
A block copolymer of methyl methacrylate (MMA) and butyl acrylate (BA) (trade name “Clarity LA2140e” manufactured by Kuraray Co., Ltd.), MMA as a step absorption layer on the opposite side of the adsorption layer used in Reference Example 1. : BA = 22: 78 (weight ratio), Mw = 79,000) 30 parts of a coating solution consisting of 70 parts of methyl ethyl ketone was applied with a gravure coater so that the dry film thickness after coating was 10 μm, It dried at the dryer temperature of 100 degreeC, and formed the level | step difference absorption layer.
実施例６：
参考例１で使用した吸着層の反対面に、段差吸収層としてメタクリル酸メチル（ＭＭＡ）とアクリル酸ブチル（ＢＡ）のブロック共重合体（商品名「クラリティＬＡ２２５０」（株）クラレ製）、ＭＭＡ：ＢＡ＝３２：６８（重量比）、Ｍｗ＝６．８万）１５部、（商品名「クラリティＬＡ２１４０ｅ」（株）クラレ製）、ＭＭＡ：ＢＡ＝２２：７８（重量比）、Ｍｗ＝７．９万）１５部、メチルエチルケトン７０部からなる塗工液をグラビアコーターにて塗工後の乾燥膜厚が１０μｍとなるよう塗工し、ドライヤー温度１００℃で乾燥し、段差吸収層を形成した。
Example 6:
A block copolymer of methyl methacrylate (MMA) and butyl acrylate (BA) (trade name “Clarity LA2250” (manufactured by Kuraray Co., Ltd.)) as a step absorption layer on the opposite surface of the adsorption layer used in Reference Example 1 , MMA : BA = 32: 68 (weight ratio), Mw = 68,000) 15 parts, (trade name “Clarity LA2140e” manufactured by Kuraray Co., Ltd.), MMA: BA = 22: 78 (weight ratio), Mw = 7 .90,000) A coating solution comprising 15 parts and 70 parts of methyl ethyl ketone was applied with a gravure coater so that the dry film thickness after coating was 10 μm, and dried at a dryer temperature of 100 ° C. to form a step absorption layer. .
実施例７：
参考例１で使用した吸着層の反対面に、段差吸収層としてメタクリル酸メチル（ＭＭＡ）とアクリル酸ブチル（ＢＡ）のブロック共重合体（商品名「クラリティＬＡ２２５０」（株）クラレ製）、ＭＭＡ：ＢＡ＝３２：６８（重量比）、Ｍｗ＝６．８万）１０部、（商品名「クラリティＬＡ４２８５」（株）クラレ製）、ＭＭＡ：ＢＡ＝５０：５０（重量比）、Ｍｗ＝６．７万）２０部、メチルエチルケトン７０部からなる塗工液をグラビアコーターにて塗工後の乾燥膜厚が１０μｍとなるよう塗工し、ドライヤー温度１００℃で乾燥し、段差吸収層を形成した。
Example 7:
A block copolymer of methyl methacrylate (MMA) and butyl acrylate (BA) (trade name “Clarity LA2250” (manufactured by Kuraray Co., Ltd.)) as a step absorption layer on the opposite surface of the adsorption layer used in Reference Example 1 , MMA : BA = 32: 68 (weight ratio), Mw = 68,000) 10 parts, (trade name “Clarity LA4285” manufactured by Kuraray Co., Ltd.), MMA: BA = 50: 50 (weight ratio), Mw = 6 .70,000) A coating solution comprising 20 parts and 70 parts of methyl ethyl ketone was applied with a gravure coater so that the dry film thickness after coating was 10 μm, and dried at a dryer temperature of 100 ° C. to form a step absorption layer. .
参考例４：
参考例１で使用した吸着層の反対面に、段差吸収層としてメタクリル酸メチル（ＭＭＡ）とアクリル酸ブチル（ＢＡ）のブロック共重合体（商品名「クラリティＬＡ４２８５」（株）クラレ製）、ＭＭＡ：ＢＡ＝５０：５０（重量比）、Ｍｗ＝６．７万）３０部、メチルエチルケトン７０部からなる塗工液をグラビアコーターにて塗工後の乾燥膜厚が１０μｍとなるよう塗工し、ドライヤー温度１００℃で乾燥し、段差吸収層を形成した。
Reference example 4 :
A block copolymer of methyl methacrylate (MMA) and butyl acrylate (BA) (trade name “Clarity LA4285” manufactured by Kuraray Co., Ltd.), MMA as a step absorption layer on the opposite surface of the adsorption layer used in Reference Example 1. : BA = 50: 50 (weight ratio), Mw = 67,000) 30 parts, coating with a gravure coater so that the dry film thickness after coating with a gravure coater is 10 μm, It dried at the dryer temperature of 100 degreeC, and formed the level | step difference absorption layer.
比較例１：
参考例１で使用した吸着層の反対面に、段差吸収層を設けていないバックグラインドテープ。
Comparative Example 1:
The back grind tape which does not provide the level | step difference absorption layer on the opposite surface of the adsorption layer used in Reference Example 1 .
比較例２：
参考例１で使用した吸着層の反対面に、同じく参考例１で使用した吸着層塗工液をグラビアコーターにて塗工後の硬化膜厚が１０μｍとなるよう塗工し、ドライヤー温度１５０℃、滞留時間１００秒で熱硬化し、段差吸収層を形成した。
Comparative Example 2:
On the opposite surface of the adsorption layer used in Reference Example 1 , the adsorption layer coating solution used in Reference Example 1 was applied with a gravure coater so that the cured film thickness was 10 μm, and the dryer temperature was 150 ° C. The resin was heat-cured with a residence time of 100 seconds to form a step absorption layer.
比較例３：
参考例１で使用した吸着層の反対面に、段差吸収層としてアクリル粘着剤（アクリル酸ブチル：アクリル酸＝９７：３，Ｍｗ＝９０万）５９部、架橋剤（トリレンジイソシアネート）１部、トルオール４０部からなる塗工液をグラビアコーターにて塗工後の硬化膜厚が１０μｍとなるよう塗工し、ドライヤー温度１００℃、滞留時間１００秒で熱硬化し、段差吸収層を形成した。
Comparative Example 3:
On the opposite side of the adsorption layer used in Reference Example 1 , 59 parts of an acrylic pressure-sensitive adhesive (butyl acrylate: acrylic acid = 97: 3, Mw = 900,000), 1 part of a crosslinking agent (tolylene diisocyanate), A coating liquid consisting of 40 parts of toluene was applied with a gravure coater so that the cured film thickness was 10 μm, and was thermally cured at a dryer temperature of 100 ° C. and a residence time of 100 seconds to form a step absorption layer.
＜評価方法＞
実施例２、３、６、７、比較例１〜３、参考例１〜４のバックグラインドテープを使用し、下記の評価方法に基づいて、評価を実施した。
段差吸収性：
ウエハ研削機に（株）岡本工作機械製作所製「バックグラインダーＧＮＸ２００」を使用し、直径２００ｍｍの半導体ウエハを粗削り用研削材と仕上げ用研削材により、３０μｍ厚みまで研削・研磨した際のウエハ表面凹凸（ＴＴＶ値）をＦＩＬＭＥＴＲＩＣＳ製「Ｆ５０」により測定した。
○：ウエハの表面凹凸（ＴＴＶ値） １．５μｍ未満
△：ウエハの表面凹凸（ＴＴＶ値） １．５〜３．０μｍ
×：ウエハの表面凹凸（ＴＴＶ値） ３．０μｍを超える。
真空チャックテーブルからの剥離性：
上記研削機による研削・研磨作業後、真空チャックテーブルの真空解除を行い、テーブル面からエアーを噴出して、真空チャックテーブルから半導体ウエハを剥がす際のウエハ破損状態を確認した。
○：ウエハの破損なし
△：ウエハの端部破損
×：ウエハの全面破損
<Evaluation method>
Evaluation was carried out based on the following evaluation method using the back grind tapes of Examples 2, 3, 6 , 7 and Comparative Examples 1 to 3 and Reference Examples 1 to 4 .
Step absorbency:
Wafer surface irregularities when using a back grinder GNX200 manufactured by Okamoto Machine Tool Co., Ltd. as a wafer grinding machine, and grinding and polishing a semiconductor wafer with a diameter of 200 mm to a thickness of 30 μm using a roughing abrasive and a finishing abrasive. (TTV value) was measured by “F50” manufactured by FILMETRICS.
○: Wafer surface unevenness (TTV value) less than 1.5 μm Δ: Wafer surface unevenness (TTV value) 1.5-3.0 μm
×: Wafer surface irregularities (TTV value) exceeding 3.0 μm.
Peelability from vacuum chuck table:
After the grinding / polishing operation by the grinding machine, the vacuum of the vacuum chuck table was released, air was blown from the table surface, and the wafer damage state when peeling the semiconductor wafer from the vacuum chuck table was confirmed.
○: No wafer breakage △: Wafer edge breakage ×: Whole wafer breakage
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