JP6146642B2 - Manufacturing method of substrate for semiconductor device and manufacturing method of resin-encapsulated semiconductor device - Google Patents

Description

  The present invention provides a miniaturized resin-encapsulated semiconductor device, a method for manufacturing the resin-encapsulated semiconductor device, a semiconductor device substrate for obtaining such a resin-encapsulated semiconductor device, and the semiconductor device The present invention relates to a method for manufacturing a substrate.

  A conventional resin-encapsulated semiconductor device seals a wiring portion, a semiconductor element disposed on the wiring portion, a wire connecting the wiring portion and the semiconductor element, a wiring portion, the semiconductor element, and the wire. And a resin sealing portion made of a resin member.

  Such a resin-encapsulated semiconductor device is manufactured as follows. That is, first, a substrate is prepared. Next, a resist is provided on the front side and the back side of the substrate. Thereafter, plating is performed on the surface side of the substrate using the resist on the surface side, and a wiring portion is formed by this plating. Next, the substrate is etched using the resist on the back surface side of the substrate to shape the outer shape of the substrate. Thereafter, the resist is removed from the front surface side and the back surface side of the substrate.

Next, a semiconductor element is mounted on the wiring part, and then the semiconductor element and the wiring part are electrically connected by a wire. Next, the wiring portion, the semiconductor element, and the wire are sealed with a resin sealing portion made of a resin material. Next, the substrate is removed from the semiconductor device, and the wiring portion is exposed to the outside. In this way, a resin-encapsulated semiconductor device is obtained.
JP 2009-164594 A

  Since such a resin-encapsulated semiconductor device does not have a substrate, the thickness can be reduced. However, the wiring portion of the semiconductor device is formed by first providing a plating resist on the surface side of the substrate and plating the openings in the resist. However, the metal forming the wiring portion is made of expensive noble metals such as Pd and Au, and the plating resist is formed by a complicated plate making process such as screen printing. It is difficult to improve the throughput by exchanging the plate or washing the plate.

  The present invention has been made in consideration of such points, and without undergoing a plating process using an expensive noble metal and without requiring a complicated plate making process, and a resin-encapsulated semiconductor device obtained It is an object of the present invention to provide a method for manufacturing the resin-encapsulated semiconductor device, a semiconductor device substrate for obtaining such a resin-encapsulated semiconductor device, and a method for manufacturing the semiconductor device substrate.

  The present invention includes a step of preparing a metal substrate, a step of providing a first pattern permanent resist having a first opening on the surface of the substrate, and filling the first opening of the permanent resist in the surface of the substrate, And a semiconductor device comprising: a step of providing a wiring layer formed with a desired wiring pattern on a permanent resist by an ink jet method using a metal-containing ink; and a step of firing the formed wiring pattern. It is a manufacturing method of the board | substrate.

  According to the present invention, a second pattern etching resist having a second opening is further provided on the back surface of the substrate, and etching is performed from the back surface side of the substrate using the etching resist while covering the surface of the substrate with a protective film. A method of manufacturing a substrate for a semiconductor device, wherein a hole is formed in the substrate.

  The present invention is a method for manufacturing a substrate for a semiconductor device, wherein the step of forming a wiring layer on the surface of the substrate is performed after etching and forming holes in the substrate.

  The present invention is a method for manufacturing a substrate for a semiconductor device, wherein the step of forming a wiring layer on the surface of the substrate is performed before the hole is formed in the substrate by etching.

  The present invention is a method for manufacturing a substrate for a semiconductor device, wherein a wiring layer is formed on a surface of a substrate by an inkjet method using Ag nano ink.

  The present invention includes a step of preparing a metal substrate, a step of providing a first pattern permanent resist having a first opening on the surface of the substrate, and filling the first opening of the permanent resist in the surface of the substrate, And a step of providing a wiring layer formed with a desired wiring pattern on a permanent resist by an ink jet method using a metal-containing ink, a step of firing the formed wiring layer, and a step of mounting a semiconductor element on the wiring layer And a step of sealing the permanent resist, the semiconductor element, and the wiring layer with a resin sealing portion, and a step of removing the substrate so that the wiring layer is exposed from the first opening of the permanent resist. This is a method for manufacturing a resin-encapsulated semiconductor device.

  According to the present invention, a second pattern etching resist having a second opening is provided on the back surface of the substrate, and etching is performed from the back surface side of the substrate using the etching resist while covering the surface of the substrate with a protective film. A method for manufacturing a resin-encapsulated semiconductor device is characterized in that a hole is formed in the substrate.

  The present invention is a method for manufacturing a resin-encapsulated semiconductor device, wherein the step of forming a wiring layer on the surface of a substrate is performed after etching to form holes in the substrate.

  The present invention is a method for manufacturing a resin-encapsulated semiconductor device, wherein the step of forming a wiring layer on the surface of a substrate is performed before etching and forming a hole in the substrate.

  The present invention is a method for manufacturing a resin-encapsulated semiconductor device, wherein a wiring layer is formed on a surface of a substrate by an ink jet method using Ag nano ink.

  The present invention relates to a metal substrate, a first pattern permanent resist having a first opening formed on the surface of the substrate, and the first resist opening of the surface of the substrate filled in the first resist. And a wiring layer formed with a desired wiring pattern, the wiring layer being formed by an ink jet method using a metal-containing ink.

  The present invention provides the substrate for a semiconductor device, wherein the wiring layer is formed on the entire surface of the substrate by an ink jet method using Ag nano ink.

  The present invention is a first pattern permanent resist disposed on a plane and having a first opening; a wiring layer filled in the first opening of the permanent resist and formed with a desired wiring pattern on the permanent resist; A semiconductor element mounted on the wiring layer; a permanent resist; and a resin sealing portion that seals the semiconductor element and the wiring layer. The wiring layer is formed by an inkjet method using a metal-containing ink. The resin-encapsulated semiconductor device is characterized in that the wiring layer is exposed outward from the first opening.

  The present invention is the resin-encapsulated semiconductor device in which the wiring layer is formed on the entire surface of the substrate by an ink jet method using Ag nano ink.

  According to the present invention, the wiring layer can be formed in the first opening of the permanent resist and on the permanent resist in the surface of the substrate by an ink jet method using a metal-containing ink. In this case, the wiring layer is formed on the permanent resist. Have a desired wiring pattern. As described above, since the wiring layer can be formed by the ink jet method without passing through a plating process using an expensive noble metal on the surface of the substrate, the throughput can be improved and the manufacturing cost can be reduced.

FIGS. 1A to 1E are flowcharts showing steps for manufacturing a semiconductor device substrate according to an embodiment of the present invention. FIGS. 2A to 2E are flowcharts showing steps of manufacturing a resin-encapsulated semiconductor device according to an embodiment of the present invention. FIG. 3 is a schematic cross-sectional view showing a semiconductor device substrate according to an embodiment of the present invention. 4A and 4B are schematic cross-sectional views showing a semiconductor device substrate according to an embodiment of the present invention. FIG. 5 is a diagram illustrating an inkjet nozzle.

Embodiment
Semiconductor Device Substrate and Resin Sealed Semiconductor Device Hereinafter, embodiments of a semiconductor device substrate and a resin sealed semiconductor device according to the present invention will be described with reference to the drawings. Here, FIG. 3 and FIG. 4 (a) (b) are figures which show embodiment of this invention.

  As shown in FIG. 3, a semiconductor device substrate 10 includes a metal substrate 1, a permanent resist 3 having a first pattern 3A having a first opening 3a formed on a surface 1a of the substrate 1, and a substrate. 1 is provided with a wiring layer 11 filled in the first opening 3a of the permanent resist 3 on the surface 1a and formed with the desired wiring pattern 11A on the permanent resist 3. Here, FIG. 3 is a schematic sectional view of the substrate 10 for a semiconductor device according to the present embodiment.

  As described above, in FIG. 3, the wiring layer 11 is filled in the first opening 3 a of the permanent resist 3 and is formed with the desired wiring pattern 11 </ b> A on the permanent resist 3. In this case, the wiring layer 11 is formed by applying metal-containing ink, for example, Ag nano ink containing Ag particles having a particle size of nm order on the substrate 1 by the ink jet method, and firing the Ag nano ink applied on the substrate 1. Can be obtained. The substrate 1 of the semiconductor device substrate 10 has a hole 1A that defines the outer shape of the substrate.

  As the metal-containing ink for forming the wiring layer 11, for example, a Cu nano ink containing Cu particles having a particle size of the order of nm can be used in addition to the Ag nano ink.

  Further, as shown in FIG. 4A, the resin-encapsulated semiconductor device 10A manufactured using the substrate 1 described above is permanently disposed including a first pattern 3A that is arranged in a planar shape and has a first opening 3a. A resist 3 and a wiring layer 11 filled in the first opening 3a of the permanent resist 3 and formed with a desired wiring pattern 11A on the permanent resist 3 are provided.

  Further, as shown in FIG. 4A, the wiring layer 11 is composed of a plurality of portions, and a semiconductor is disposed above a desired portion of the wiring layer 11 via an insulating adhesive layer (for example, a die attach film) 35. The element 50 is mounted. Further, the semiconductor element 50 and other portions of the wiring layer 11 are electrically connected by an internal connection portion (wires in FIG. 4A) 30.

  As shown in FIG. 4A, the permanent resist 3, the wiring layer 11, the semiconductor element 50, and the wire 30 are sealed by a resin sealing portion 40 made of a resin material. In addition, as a resin material, the electrically insulating thing conventionally used for the resin-sealed semiconductor device can be used, and it is not limited to a specific material.

  4A, the wiring layer 11 is filled in the first opening 3a of the permanent resist 3, and is formed on the permanent resist 3 with a desired wiring pattern 11A. In this case, the wiring layer 11 is obtained by applying a metal-containing ink, for example, Ag nanoink, onto the substrate 1 by an ink jet method and firing the Ag nanoink applied on the substrate 1.

  In addition, as a metal containing ink which forms the wiring layer 11, Cu nano ink can also be used other than Ag nano ink, for example.

  As shown in FIG. 4A, a first opening 3a is formed in the permanent resist 3 in the resin sealing portion 40, and the wiring layer 11 filled in the first opening 3a of the permanent resist 3 is Then, it is exposed from the permanent resist 3 of the resin sealing portion 40. Solder balls (external connection portions) 25 are provided on the wiring layer 11 filled in the first openings 3 a of the permanent resist 3 and exposed from the permanent resist 3.

  In the embodiment shown in FIG. 4A, a semiconductor element 50 is placed on a desired portion of the wiring layer 11 with an insulating adhesive 35 interposed therebetween. Although the example which connected between the parts by the wire 30 was shown, it is not restricted to this, The semiconductor element 50 is mounted on the predetermined part of the wiring layer 11, and is connected, Flip chip type resin-sealed semiconductor device 10A May be produced.

  Next, the operation of the present embodiment having such a configuration will be described.

Method for Manufacturing Semiconductor Device Substrate First, a method for manufacturing a semiconductor device substrate 10 will be described with reference to FIGS.

  First, the metal board | substrate 1 is prepared (refer Fig.1 (a)). The metal substrate 1 is preferably copper or a copper alloy because it is removed by etching after the package is completed. Thereafter, oil and dirt adhering to the surface of the substrate 1 are removed (degreasing).

  Next, the permanent resist 3 and the etching resist 4 are provided in a desired pattern on each of the front surface 1 a and the back surface 1 b of the substrate 1. In this case, the permanent resist 3 has a first pattern 3A having a first opening 3a, and the etching resist 4 has a second pattern 4A having a second opening 4a. Specifically, for example, a dry film resist is pasted as a photosensitive resist layer on the front surface 1a and the back surface 1b of the substrate 1 (see FIG. 1B). Thereafter, the dry film resists (DFR) 3 and 4 are exposed in a desired pattern and developed. Here, when the front and back surfaces are exposed in the same process, the relative positional accuracy between the first opening 3a of the permanent resist 3 and the pattern of the hole 1A including the jig hole of the substrate 1 formed by etching can be maintained satisfactorily. . The hole formed by etching may be formed not only with the jig hole, but also with a slit for cutting in the case of multi-sided attachment.

  In this case, an insulating dry film resist such as SR1 manufactured by Taiyo Ink is used as the permanent resist 3, and an etching resistant dry film resist such as AQ2558 manufactured by Asahi Kasei is used as the dry film resist 4. it can.

  Next, the surface 1a of the substrate 1 and the permanent resist 3 on the surface 1a side of the substrate 1 are covered with a protective film 7 (see FIG. 1C).

  Next, the substrate 1 is etched from the back surface 1b side to form holes (for example, jig holes and cutting slits) 1A at predetermined positions of the substrate 1 (see FIG. 1C). The hole 1A is used for positioning the substrate 1 and transporting the substrate 1.

  Next, the etching resist 4 provided on the back side of the substrate 1 is stripped (see FIG. 1D). Thereafter, the protective film 7 provided on the surface 1a side of the substrate 1 is peeled off.

  In FIG. 1D, the permanent resist 3 provided on the surface 1a side of the substrate 1 remains as it is.

  Next, as shown in FIG. 1E, a wiring layer 11 is formed on the first opening 3 a of the permanent resist 3 and the permanent resist 3 in the surface 1 a of the substrate 1. In this case, Ag nano-ink is applied to the surface 1a of the substrate 1 from the ink-jet nozzle 12 by using an ink-jet method, and the Ag nano-ink is filled in the first opening 3a of the permanent resist 3, and the Ag nano-ink is applied on the permanent resist 3. Application is performed with a desired wiring pattern (FIG. 5). In this case, as the Ag nano ink, for example, an Ag nano ink such as Harima Kasei HPS-JL having a particle diameter of 5 to 12 nm can be used.

  Thereafter, the Ag nano-ink filled in the first opening 3a of the permanent resist 3 on the surface 1a of the substrate 1 and coated with the desired wiring pattern on the permanent resist 3 is baked. The firing time at this time is 15 minutes, and the firing temperature is 300 ° C.

  By firing the Ag nano ink, the wiring layer 11 filled in the first opening 3a of the permanent resist 3 and formed with the desired wiring pattern on the permanent resist 3 is obtained.

  Thus, the semiconductor device substrate 10 according to the present invention is obtained.

Method for Manufacturing Resin Sealed Semiconductor Device Next, referring to FIGS. 2A to 2F, a resin sealed semiconductor device is manufactured using the semiconductor device substrate 10 manufactured as described above. A manufacturing method will be described.

  First, the semiconductor device substrate 10 manufactured as described above is prepared (see FIG. 2A). In this case, the wiring layer 11 formed on the permanent resist 3 of the semiconductor device substrate 10 includes a plurality of portions.

  Next, the semiconductor element 50 is mounted on the upper side of a desired portion of the wiring layer 11 formed on the substrate 1 of the semiconductor device substrate 10 via the die attach film 35 (see FIG. 2B). In other words, such a configuration is a configuration in which the wiring portion 11 is disposed on the lower side (the other side) of the semiconductor element 50.

  Next, the semiconductor element 50 and the other part of the wiring layer 11 are connected by the wire (internal connection part) 30 (see FIG. 1B).

  Next, the permanent resist 3, the wiring layer 11, the semiconductor element 50, and the wire 30 are sealed with a resin sealing portion 40 made of a resin material (see FIG. 2C).

  Next, the substrate 1 is removed by etching (see FIG. 2D). By removing the substrate 1 in this way, the wiring layer 11 filled in the first opening 3a of the permanent resist 3 is exposed to the outside. When the substrate 1 is copper or a copper alloy, the wiring layer 11 made of Ag filled in the first opening 3a of the permanent resist 3 is left in the first opening 3a by using an ammonia-based etching solution as an etching solution. The substrate 1 can be removed as it is. By removing the substrate 1 by etching, a mechanical peeling force becomes unnecessary when removing the substrate 1, and the risk of peeling the permanent resist 3 and the wiring layer 11 from the sealing resin portion 40 can be avoided. As the ammonia-based etching solution, an etching solution mainly composed of ammonium chloride is used.

  Next, a solder ball (external connection portion) 25 protruding downward is connected to the wiring portion 11 filled in the first opening 3a of the permanent resist 3 and exposed outward (see FIG. 2E). Here, since the wiring layer 11 in the first opening 3a is made of Ag, the solder ball 25 can be easily connected to the wiring layer 11 in the first opening 3a.

  In addition, by providing the solder balls 25 protruding downward in this way, the wiring layer 11 filled in the first openings 3a of the permanent resist 3 is connected to the outside of the wiring of the printed wiring board via the solder balls 25. It can be easily electrically connected to a member (not shown).

  At this time, instead of providing the solder balls 25, a plating layer having a thickness protruding from the wiring layer 11 in the first opening 3a of the permanent resist 3 may be formed by electroless plating.

  Next, the plurality of semiconductor devices are separated into pieces by dicing or the like.

  As described above, according to the present embodiment, Ag nanoink is applied onto the substrate 1 using the ink jet method, and the Ag nanoink is baked, so that the first opening 3a of the permanent resist 3 is filled with the permanent resist. 3 can be provided with a wiring layer 11 formed with a desired wiring pattern. Thus, since it is not necessary to produce the wiring layer 11 through a complicated plate making process and a plating process using an expensive noble metal, it is possible to improve the throughput and reduce the manufacturing cost. In addition, the wiring layer 3 filled in the first opening 3a of the permanent resist 3 can be exposed to the outside of the permanent resist 3, and the wiring layer 11 on the permanent resist 3 can be insulated and protected by the permanent resist 3. For this reason, this permanent resist 3 can be used as an insulating protective layer for electrically insulating and protecting the wiring layer 11. In order to electrically protect the wiring layer 11, it is necessary to provide an insulating protective film separately. Absent.

  Further, the Ag nano-ink is applied in the first opening 3a of the permanent resist 3 and on the permanent resist 3 to form the wiring layer 11, and the insulating protective layer of the wiring layer 11 is removed as described above without peeling off the permanent resist 3. Therefore, the permanent resist 3 can be effectively used.

  In the above embodiment, after the hole 1A is formed in the substrate 1, Ag nano ink is applied in the first opening 3a of the permanent resist 3 on the substrate 1 and on the permanent resist 3 to form the wiring layer 11. Although an example is shown (FIGS. 1C to 1D), the present invention is not limited to this, and before the hole 1A is formed in the substrate 1, the first resist 3 in the first resist 3 on the substrate 1 and the permanent resist 3 are formed. It is possible to form the wiring layer 11 by applying Ag nano ink on the substrate, and then etching the substrate 1 to form the hole 1A. The method is better.

DESCRIPTION OF SYMBOLS 1 Substrate 1a Front surface 1b Back surface 1A Hole 3 Permanent resist 3a First opening 3A First pattern 4 Etching resist 4a Second opening 4A Second pattern 7 Protective film 10 Semiconductor device substrate 10A Resin-encapsulated semiconductor device 11 Wiring layer 11A Wiring pattern 12 Nozzle for inkjet 25 Solder ball (external connection part)
30 Wire or bump (internal connection)
35 Insulating adhesive layer (die attach film)
40 Resin sealing part 50 Semiconductor element

Claims (4)

Preparing a metal substrate;
Providing a first pattern of permanent resist having a first opening on the surface of the substrate;
Providing a wiring layer filled in the first opening of the permanent resist on the surface of the substrate and having a desired wiring pattern formed on the permanent resist by an ink jet method using a metal-containing ink;
Firing the formed wiring layer, and
A second pattern etching resist having a second opening on the back surface of the substrate;
While covering the surface of the substrate with a protective film, forming a hole in the substrate by performing etching using a resist for etching from the back side of the substrate,
A method of manufacturing a substrate for a semiconductor device, wherein the step of forming a wiring layer on the surface of the substrate is performed after etching is performed to form holes in the substrate. 2. The method of manufacturing a substrate for a semiconductor device according to claim 1 , wherein a wiring layer is formed on the surface of the substrate by an ink jet method using Ag nano ink. Preparing a metal substrate;
Providing a first pattern of permanent resist having a first opening on the surface of the substrate;
Providing a wiring layer filled in the first opening of the permanent resist on the surface of the substrate and having a desired wiring pattern formed on the permanent resist by an ink jet method using a metal-containing ink;
Firing the formed wiring layer;
Mounting a semiconductor element on the wiring layer;
Sealing the permanent resist, the semiconductor element, and the wiring layer with a resin sealing portion;
Removing the substrate, thereby exposing the wiring layer from the first opening of the permanent resist, and
Providing a second pattern etching resist having a second opening on the back surface of the substrate;
While covering the surface of the substrate with a protective film, forming a hole in the substrate by performing etching using a resist for etching from the back side of the substrate,
A method of manufacturing a resin-encapsulated semiconductor device, wherein the step of forming a wiring layer on a surface of a substrate is performed after etching is performed to form a hole in the substrate. 4. The method for manufacturing a resin-encapsulated semiconductor device according to claim 3 , wherein a wiring layer is formed on the surface of the substrate by an ink jet method using Ag nano ink.

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