JP6166162B2 - Lid, electronic component storage package and electronic device - Google Patents

Description

  The present invention relates to a lid, an electronic component storage package, and an electronic device.

  As an electronic component storage package for mounting an electronic component such as a semiconductor element and a piezoelectric element, a package having an electronic component mounting portion on an insulating substrate made of a ceramic material such as an aluminum oxide sintered body is used. It has been. An electronic component is mounted on the mounting portion of the insulating substrate, a lid having a base made of silicon or the like is bonded to the upper surface of the insulating substrate so as to close the mounting portion, and the electronic component is interposed between the insulating substrate and the lid. Hermetically sealed (Patent Document 1).

  The lid and the insulating substrate are joined by a joining method such as brazing. For example, a frame-shaped metal layer is provided on the outer peripheral portion of the upper surface of the insulating substrate, and a frame-shaped metal film is provided on the outer peripheral portion of the lower surface of the lid, and the metal layer and the metal films are connected to each other via a brazing material. Be joined. Heating means such as infrared rays is used for heating the brazing material. The irradiated infrared rays are absorbed by the insulating substrate and converted into heat energy, and this heat is transmitted to the brazing material through the metal layer, and the brazing material is heated.

JP 2001-308212 A

  When heating by infrared rays is performed, in order to heat the solder disposed at the joint between the lid and the insulating substrate, it is desirable to increase the infrared absorption rate of the insulating substrate and the lid. However, a lid having an insulating substrate made of an aluminum oxide sintered body and a base made of silicon or the like has a relatively small infrared absorptivity, so that the infrared absorptivity of the insulating substrate and the lid is increased. There was a problem that was difficult. Therefore, for example, when the bonding method as described above is performed, it takes time to heat the metal layer of the insulating substrate and the metal film of the lid, so that the brazing material disposed between the metal layer and the metal film has sufficient heat. It took time until the signal was transmitted, and it was difficult to shorten the time of the heat bonding process. Further, when the conventional heating method is used, depending on the location of the brazing material, there is a location where it is difficult to reach the melting point because the heat is not sufficiently transmitted. Accordingly, since the brazing material is not melted and a portion where the metal layer and the metal film are not joined is likely to occur, the airtightness of the storage space of the electronic component surrounded by the insulating substrate and the lid is likely to be lowered. There was a problem.

  The present invention has been devised in view of the above-mentioned problems of the prior art, and its purpose is to shorten the time of the bonding process of the lid to the insulating substrate and to reduce the time required for the electronic component surrounded by the lid and the insulating substrate. An object of the present invention is to provide a lid, an electronic component storage package, and an electronic device that can suppress a decrease in airtightness of a storage space.

The lid of one aspect of the present invention includes a flat base having a lower surface and an upper surface, a metal film provided in a frame shape on the outer peripheral portion of the lower surface, and the metal film on the inner side of the metal film on the lower surface The first layer contains a first metal oxide and absorbs infrared rays, and the getter material is provided on the lower surface of the first layer .

The lid of one aspect of the present invention includes a flat base having a lower surface and an upper surface, a metal film provided in a frame shape on the outer peripheral portion of the lower surface, and the metal film on the inner side of the metal film on the lower surface The first layer contains a first metal oxide and absorbs infrared rays, and is provided on the upper surface and is positioned so as to overlap the metal film in a top view. And a second layer containing a metal oxide and absorbing infrared rays .

  The lid of one aspect of the present invention is provided on a flat base having a lower surface and an upper surface, a metal film provided in a frame shape on the outer peripheral portion of the lower surface, and provided on the upper surface. A fourth layer positioned so as to overlap with the metal film, and the fourth layer contains a first metal oxide and absorbs infrared rays.

  An electronic component storage package according to one aspect of the present invention has an upper surface including the lid and an electronic component mounting portion, and an outer peripheral portion of the upper surface is bonded to the metal film, and the upper surface is And an insulating substrate covered with the lid.

  An electronic device according to an aspect of the present invention includes the electronic component storage package and an electronic component mounted on the mounting portion.

According to the lid of one aspect of the present invention, the first layer containing the first metal oxide and absorbing infrared rays is provided along the metal film inside the metal film on the lower surface of the substrate. Therefore, when heat is generated in the first layer by irradiating infrared rays, the heat is easily transmitted to the metal film. Therefore, for example, when the brazing material disposed on the lower surface of the metal film is heated and bonded to the insulating substrate, not only the heat generated in the insulating substrate but also the heat generated in the first layer is also transmitted through the metal film. Since it is transmitted to the brazing material, the time until the brazing material reaches the melting point is shortened, and the time for the bonding step between the lid and the insulating substrate can be shortened. In addition, since the heat generated in the first layer is also transmitted to the brazing material, a portion that does not reach the melting point is hardly generated in the brazing material, and the brazing material is favorably bonded to the metal film and the insulating substrate. Therefore, it is possible to suppress a decrease in the airtightness of the storage space for the electronic component surrounded by the lid and the insulating substrate. In addition, a getter material is provided on the lower surface of the first layer.
Therefore, the first layer is irradiated with infrared rays, and the infrared rays are absorbed by the first layer and converted into thermal energy, and not only the metal film but also the getter material can be heated by the thermal energy.

According to the lid of one aspect of the present invention, the first layer containing the first metal oxide and absorbing infrared rays is provided along the metal film inside the metal film on the lower surface of the substrate. Therefore, when heat is generated in the first layer by irradiating infrared rays, the heat is easily transmitted to the metal film. Therefore, for example, when the brazing material disposed on the lower surface of the metal film is heated and bonded to the insulating substrate, not only the heat generated in the insulating substrate but also the heat generated in the first layer is also transmitted through the metal film. Since it is transmitted to the brazing material, the time until the brazing material reaches the melting point is shortened, and the time for the bonding step between the lid and the insulating substrate can be shortened. In addition, since the heat generated in the first layer is also transmitted to the brazing material, a portion that does not reach the melting point is hardly generated in the brazing material, and the brazing material is favorably bonded to the metal film and the insulating substrate. Therefore, it is possible to suppress a decrease in the airtightness of the storage space for the electronic component surrounded by the lid and the insulating substrate. In addition, the second layer that contains the first metal oxide and absorbs infrared rays is provided on the upper surface of the substrate, and is positioned so as to overlap the metal film when viewed from above, so that only the first layer is present. In addition, since the second layer is also irradiated with infrared rays and converted to thermal energy, the metal film located on the opposite surface across the second layer and the substrate can be heated more efficiently.

  According to the lid of one aspect of the present invention, the fourth layer that contains the first metal oxide and absorbs infrared rays is provided on the upper surface of the base, and the fourth layer is viewed from above. Since it is positioned so as to overlap with the metal film, when heat is generated in the fourth layer by irradiating infrared rays, the heat is easily transmitted to the metal film on the opposite side across the fourth layer and the substrate. Therefore, as described above, it is possible to reduce the time for the bonding step between the lid and the insulating substrate, and it is possible to suppress a decrease in the airtightness of the storage space for the electronic component surrounded by the lid and the insulating substrate.

  According to the electronic component storage package of one aspect of the present invention, the electronic component housing package has an upper surface including the lid and an electronic component mounting portion, and an outer peripheral portion of the upper surface is bonded to the metal film, Since it is covered with the lid, it is possible to suppress a decrease in the airtightness of the storage space for the electronic component surrounded by the lid and the insulating substrate.

  According to the electronic device of one aspect of the present invention, since the electronic component is hermetically sealed in the electronic component storage package having the above-described configuration, the air-tightness of the storage space for the electronic component surrounded by the lid and the insulating substrate is achieved. Deterioration can be suppressed.

(A) is a bottom view which shows a part of lid body which is an example of embodiment which is this invention, (b) is sectional drawing in the XX of (a). (A) is a bottom view which shows an example of embodiment of the cover body which is this invention, (b) is sectional drawing in the XX of (a). (A) is a top view which shows the other example of embodiment of the cover body which is this invention, (b) is sectional drawing in the XX line of (a). (A) is a bottom view which shows the reference example of a cover body , (b) is sectional drawing in the XX line of (a). (A) is a top view which shows the other example of embodiment of the cover body which is this invention, (b) is sectional drawing in the XX line of (a). (A) is a top view which shows an example of embodiment of the electronic component storage package and electronic device (except a cover body) which are this invention, (b) is in the XX line of (a). It is sectional drawing. (A) is a top view which shows the other example of embodiment of the electronic component storage package and electronic device (except a cover body) which are this invention, (b) is XX of (a). It is sectional drawing in a line.

  The lid, electronic component storage package, and electronic device of the present invention will be described with reference to the accompanying drawings. In addition, the distinction between the upper and lower sides in the following description is for convenience of explanation, and does not define the upper and lower sides when an electronic component storage package or the like is actually used. In the following description, infrared rays basically have a main range mainly in the near infrared region that is easily absorbed by metal oxides. Specifically, it is an infrared ray having a wavelength of about 0.7 to 3 μm.

  An example of an embodiment of a lid according to the present invention will be described with reference to FIG. The lid body 1 of the present invention includes a base body 10, a metal film 2, and a first layer 3.

  As in the example shown in FIG. 1, the substrate 10 has a flat plate shape. In the example shown in FIG. 1, the base body 10 has a quadrangular shape when viewed from above, but the shape is not particularly limited. For example, the substrate 10 may have a circular shape or the like when viewed from above. The material of the base 10 is copper, an iron-based alloy material such as an iron-nickel alloy, an iron-nickel-cobalt alloy, a metal material such as a copper-based alloy material, or a silicon or aluminum oxide sintered body. , A mullite sintered body, an aluminum nitride sintered body, or a ceramic such as a silicon carbide sintered body. The dimensions of the base body 10 in a top view are, for example, about 5.0 to 25.0 mm in length and width, and the thickness of the base body 10 is about 0.3 to 2.5 mm.

  As in the example shown in FIG. 1, the metal film 2 is provided in a frame shape on the outer peripheral portion of the lower surface of the substrate 10. The metal film 2 is formed of, for example, a metal material such as tungsten, molybdenum, manganese, copper, silver, palladium, gold, platinum, nickel, or cobalt, or an alloy or a mixture of these metal materials. The metal film 2 is provided on the substrate 10 by means such as metallization, plating, or vapor deposition.

  The width of the frame-shaped metal film 2 is, for example, about 0.5 to 1.5 mm. The thickness of the metal film 2 is, for example, about 0.5 to 5.0 μm.

As shown in the example shown in FIG. 1, the first layer 3 is provided on the inner surface of the metal film 2 on the lower surface of the substrate 10 so as to be along the metal film 2, and contains the first metal oxide. To absorb. In the example shown in FIG. 1, the first layer 3 is provided in a frame shape like the metal film 2. The first
A plurality of layers 3 may be located inside the metal film 2 and arranged along the metal film 2. The width of the frame shape of the first layer 3 is, for example, about 0.5 to 1.5 mm.

  In the example shown in FIG. 1, the first layer 3 is provided inside the metal film 2 with an interval of, for example, about 0.05 to 0.1 mm. The first layer 3 may be in contact with the metal film 2 as long as the first layer 3 is provided inside the metal film 2 along the metal film 2. The thickness of the first layer 3 is, for example, about 0.5 to 1.5 μm.

  The first metal oxide contained in the first layer 3 is selected from, for example, magnesium oxide, zirconium oxide, titanium oxide, chromium oxide, copper oxide, manganese oxide, silicon oxide, nickel oxide, tungsten oxide, and zinc oxide. Or one or more metal oxides.

  The first layer 3 may be either an insulating layer or a conductive layer as long as it contains the first metal oxide.

  When the first layer 3 is an insulating layer, the first layer 3 is, for example, only the first metal oxide or a mixture of the first metal oxide and other ceramic materials. Consists of. When the first layer 3 is an insulating layer, for example, an insulating paste prepared by kneading the first metal oxide material powder together with an organic solvent and a binder is applied to the substrate 10 and fired. The first layer 3 can be formed.

  When the first layer 3 is a conductive layer, the first layer 3 includes, for example, the same metal material as that of the metal film 2 in addition to the first metal oxide. When the first layer 3 is a conductive layer, for example, a conductive paste prepared by kneading the first metal oxide material powder and the metal powder together with an organic solvent and a binder is applied to the substrate 10 and fired. By doing so, the first layer 3 can be baked and formed as a metallized layer.

  Up to this point, paste baking has been described as an example of a method of forming the first layer 3 on the substrate 10. However, a method of depositing the material to be the first layer 3 on the substrate 10 can also be employed.

  The material of the first layer 3 described above is appropriately selected depending on the material of the base 10 and the method of forming the first layer 3 on the base 10.

  For example, in the case where the substrate 10 is made of a metal material and the paste is selected as a method for forming the first layer 3, the material of the first layer 3 is used to increase the adhesion to the substrate 10. In addition, a material containing a metal material is preferably selected.

  On the other hand, when the substrate 10 is made of a ceramic material and the paste is selected as a method of forming the first layer 3, the material of the first layer 3 includes or does not include a metal material. Any of these are preferably used.

  In addition, when vapor deposition is selected as a method for forming the first layer 3, the material of the first layer 3 includes a metal material, regardless of whether the material of the base 10 is a metal material or a ceramic material. Any of those that are not included are preferably used.

  When the first layer 3 is a conductive layer, a plating layer further containing nickel, copper, gold, or the like may be provided on the exposed surface of the first layer 3.

In addition, the volume content of the first metal oxide in the first layer 3 is, for example, 5% by volume or more and 50% by volume or less with respect to the total volume of the first layer 3. When the volume content of the first metal oxide is 5% by volume or more, the infrared absorption amount of the first layer 3 is increased, and the heat generation amount can be increased. When the volume content of the first metal oxide is 50% by volume or less, for example, the first layer 3 contains a metal material in addition to the first metal oxide, and the base 10 is a metal material. If it consists of, the adhesive force of the 1st layer 3 and the base | substrate 10 will improve.

  The volume content of the first metal oxide in the first layer 3 may be measured using methods such as qualitative and semi-quantitative analysis using fluorescent X-rays.

Next, an example of an embodiment of the lid 1 of the present invention will be described with reference to FIG. In FIG. 2, the same parts as those in FIG.

  As in the example shown in FIG. 2, the getter material 4 is preferably provided on the lower surface of the first layer 3. According to such a configuration, the first layer 3 is irradiated with infrared rays, and the infrared rays are absorbed by the first layer and converted into thermal energy, and not only the metal film 2 but also the getter material 4 is heated by the thermal energy. can do.

  This getter material 4 has a function of adsorbing ambient gas when heated and activated. As the material of the getter material 4, a chemically active material is used. Specifically, a metal having titanium (Ti), zirconium (Zr), iron (Fe), and vanadium (V) as main components can be used.

  In order to form the getter material 4, first, a conductive paste is prepared by mixing the above metal powder with an organic solvent such as a nitrocellulose resin and an ethylcellulose resin, and this conductive paste is printed by a printing method such as a screen printing method. Printing on the surface of the first layer 3 to a desired width and thickness. Thereafter, the getter material is removed by evaporating and removing the organic solvent by heating at 250 to 500 ° C. in an inert gas atmosphere (for example, in an argon (Ar) atmosphere) or in a vacuum atmosphere. Can be placed.

As a method of disposing the getter material 4 on the surface of the first layer 3, general printing, vapor deposition, or sputtering may be used. The getter material 4 preferably has a thickness of 0.5 to 200 μm. When the thickness of the getter material is 0.5 μm or more, the gas adsorption effect can be stably obtained. In addition, when the thickness of the getter material is 1 μm or less, it is possible to prevent the heat capacity of the getter material 4 from becoming excessively large. Can be increased.

  The getter material 4 can be activated by setting its temperature to 250 to 500 ° C. This is because the effect of adsorbing gas molecules by the getter material 4 is reduced when a film such as an oxide film is formed by a compound with the gas adsorbed on the surface of the getter material 4, but the getter material 4 is heated. By doing so, the compound with the gas present on the surface of the getter material 4 can be diffused into the getter material 4. Thereby, since a new active surface can be formed on the surface of the getter material 4, the effect of adsorbing gas molecules by the getter material 4 can be improved again. In order to efficiently form a new active surface on the surface of the getter material 4, the getter material 4 is preferably heated at 250 to 500 ° C.

  The getter material 4 is used when the housing space of the electronic component surrounded by the lid 1 and other members is hermetically sealed in a vacuum atmosphere. Examples of electronic components housed in such a case include a crystal resonator, a piezoelectric element, an infrared image sensor, and the like.

  Next, another modification of the lid of the present invention will be described with reference to FIG. 3, parts similar to those in FIG. 2 are denoted by the same reference numerals.

  As shown in the example shown in FIG. 3, the second layer 5 containing the first metal oxide and absorbing infrared rays is provided on the upper surface of the base 10, and is positioned so as to overlap the metal film 2 in a top view. doing. In this case, since not only the first layer 3 but also the second layer 5 is irradiated with infrared rays and converted into thermal energy, the metal film located on the opposite surface across the second layer 5 and the substrate 10 2 can be heated more efficiently.

  Further, as in the example shown in FIG. 3, when the getter material 4 is provided on the first layer 3, the getter material 4 can be further efficiently heated by the second layer 5.

  In the example shown in FIG. 3, the first layer 3 is provided so as to match the shape of the metal film 2 in a top view, but is not limited to this configuration. For example, as long as a part of the first layer 3 overlaps the metal film 2 in the top view, the positions of the two members in the top view may be shifted.

Next, a reference example of the lid will be described with reference to FIG. 4, parts similar to those in FIG. 2 are denoted by the same reference numerals.

  In the example shown in FIG. 4, a third layer 12 containing a first metal oxide and absorbing infrared rays is provided in a frame shape on the outer peripheral portion of the lower surface of the substrate 10. The metal film 2 is provided in a frame shape on the lower surface of the third layer 12. With this structure, when heat is generated in the third layer 12 by irradiating infrared rays, the heat is easily transmitted to the metal film 2 immediately below the third layer 12. Therefore, it becomes easy to heat the brazing material disposed on the lower surface of the metal film 2.

  Next, another modification of the lid of the present invention will be described with reference to FIG. In FIG. 5, the same parts as those in FIG. 2 are denoted by the same reference numerals.

  In the example shown in FIG. 5, a fourth layer 13 containing a first metal oxide and absorbing infrared rays is provided on the upper surface of the substrate 10, and the fourth layer 13 is a metal film in a top view. 2 to overlap. According to this configuration, when heat is generated in the fourth layer 13 by irradiating infrared rays, the heat is easily transmitted to the metal film 2 on the opposite side across the fourth layer 13 and the substrate 10. Therefore, it becomes easy to heat the brazing material disposed on the lower surface of the metal film 2.

  Further, the fourth layer 13 may be provided so as to have the same shape as the metal film 2 in a top view, like the second layer 5 shown in FIG.

  Next, the electronic component storage package 20 and the electronic device 30 according to the embodiment of the present invention will be described with reference to FIG. The electronic component storage package 20 of the present invention includes the lid 1 and the insulating substrate 6 described above. The electronic device 30 of the present invention includes an electronic component storage package 20 and an electronic component 9.

  In the example shown in FIG. 6, the lid 1 includes a flat substrate 10 having a lower surface and an upper surface, a metal film 2 provided in a frame shape on the outer periphery of the lower surface of the substrate 10, and a metal on the lower surface of the substrate 10. It is provided inside the film 2 along the metal film 2 and has a first layer 3 containing a first metal oxide and absorbing infrared rays. In the example shown in FIG. 6, the lid 1 further has a getter material 4 provided on the first layer 3.

  The lid 1 used for the electronic component storage package 20 and the electronic device 30 may not have the getter material 4.

  In addition, the lid body 1 in the example shown in FIG. 6 is a second layer 5 that contains a first metal oxide and absorbs infrared rays at a position facing the metal film 2 on the outer peripheral portion of the upper surface of the substrate 10. May be provided.

  The first metal oxide is one or more selected from, for example, magnesium oxide, zirconium oxide, titanium oxide, chromium oxide, copper oxide, manganese oxide, silicon oxide, nickel oxide, tungsten oxide, and zinc oxide. It is a kind of metal oxide.

  In the example shown in FIG. 6, the insulating substrate 6 has an upper surface including the mounting portion of the electronic component 9, the outer peripheral portion of the upper surface is bonded to the metal film 2, and the upper surface is covered with the lid 1. It is supposed to be.

  Further, in the example shown in FIG. 6, the insulating substrate 6 includes a plurality of ceramic insulating layers 66 (hereinafter referred to as insulating layers) stacked on each other. In addition, the insulating substrate 6 has a recess 6a for accommodating the electronic component 9 in the center of the upper surface.

  The shape of the insulating substrate 6 in a top view is, for example, a quadrangular shape. Further, for example, the insulating substrate 6 is produced by simultaneously firing a plurality of insulating layers 66 made of the same ceramic material.

  Each of the plurality of insulating layers 66 contains a second metal oxide having a lower infrared absorption rate than the first metal oxide as a main component. The second metal oxide is, for example, a ceramic material such as an aluminum oxide sintered body, a glass ceramic sintered body, or a mullite sintered body. As described above, in the plurality of insulating layers 66, the first metal oxide is the main component. Thus, for example, if the insulating layer 66 is made of an aluminum oxide sintered body, the first metal oxide is aluminum oxide, and the insulating layer 66 is made of a glass ceramic sintered body containing aluminum oxide and silicic acid. If so, the first metal oxide is a composition of aluminum oxide and silicon oxide. The volume content of the first metal oxide with respect to the entire volume of one insulating layer 66 is, for example, 75 to 99 volume%. The same applies to the volume content of the first metal oxide with respect to the entire volume of the insulating substrate 6.

  Such an insulating substrate 6 includes an organic binder suitable for a raw material powder such as aluminum oxide, silicon oxide, magnesium oxide, and calcium oxide if all of the plurality of insulating layers 66 are made of an aluminum oxide sintered body. Slurry prepared by adding and mixing solvents, etc., is formed into a sheet by a sheet forming method such as a doctor blade method, to form a plurality of ceramic green sheets, and after laminating them, the laminate is fired at high temperature It is manufactured by doing. In this case, if an appropriate punching process is performed on a part of the ceramic green sheets to form a frame, and this is laminated on another flat ceramic green sheet, an insulating substrate 6 having a recess 6a is manufactured. can do.

  The recessed part 6a is a part which becomes a part of the container for accommodating the electronic component 9 and hermetically sealing as described above. The bottom surface of the recess 6a has, for example, a rectangular shape such as a rectangular shape in plan view so that the electronic component 9 such as a rectangular plate shape can be efficiently accommodated.

  Further, as in the example shown in FIG. 6, the insulating substrate 6 has a stepped portion 6b on the inner surface of the recess 6a. In the example shown in FIG. 6, the connection electrode 12 is provided on the upper surface of the stepped portion 6b. The connection electrode 12 serves as a conductive path for electrically connecting the electronic component 9 accommodated in the recess 6a to an external electric circuit (not shown).

In the example shown in FIG. 6, the electronic component 9 accommodated in the recess 6 a is electrically connected to the connection electrode 12 by the bonding wire 11. The connection electrode 12 is electrically connected to the external connection terminal 7 on the lower surface of the insulating substrate 6 through a through conductor (so-called via conductor) provided inside the insulating substrate 6 or the like. The electronic component 4 is electrically connected to an external electric circuit via the connection electrode 7, a through conductor (not shown), the external connection terminal 7, and the like.

  Although it does not specifically limit as the electronic component 9, For example, imaging elements, such as an infrared image sensor, a semiconductor element, a piezoelectric element, or a crystal oscillator etc. are used.

  In the example shown in FIG. 6, the upper metal layer 5 is provided in a frame shape on the upper surface of the uppermost insulating layer 66 among the plurality of insulating layers 66. This is a base layer for brazing or the like when the lid 1 is provided on the upper surface of the insulating substrate 6. As a more detailed example, the lid 1 and the insulating substrate 6 are joined by the metal film 2 of the lid 1 and the upper surface metal layer 5 of the insulating substrate 6 as in the example shown in FIG. It is performed by being joined via a brazing material such as solder.

  In the example shown in FIG. 6, the external connection terminal 7 is provided on the lower surface of the insulating substrate 6. The external connection terminal 7 serves as a connection terminal with an external substrate or the like. The electrical connection between the external connection terminal 7 and the external electric circuit is performed by, for example, a brazing material such as solder, a conductive adhesive, a lead terminal, or the like.

  The upper surface metal layer 5, the connection electrode 12, and the external connection terminal 7 are made of, for example, a metal material such as tungsten, molybdenum, manganese, copper, silver, palladium, gold, platinum, nickel, or cobalt, or an alloy or a mixture of these metal materials. It is made of material. Further, the upper metal layer 5, the connection electrode 12, and the external connection terminal 7 are provided on the insulating substrate 5 by means such as metallization, plating, or vapor deposition.

  When the upper surface metal layer 5, the connection electrode 12, and the external connection terminal 7 are metallized layers such as tungsten, they are formed as follows. That is, a metal paste prepared by kneading a powder of a metal material such as tungsten together with an organic solvent and a binder is applied to a ceramic green sheet serving as the insulating substrate 6 and co-fired, whereby an upper surface formed of a metallized layer of tungsten. The metal layer 5, the connection electrode 12, and the external connection terminal 7 can be formed. Further, a plating layer further containing nickel, copper, gold, or the like may be provided on the exposed surface of the metallized layer.

  The upper surface metal layer 5, the connection electrode 12, and the external connection terminal 7 are electromagnetically coupled to the electronic component 9 that is housed and sealed in the recess 6a, for example, by appropriately setting the arrangement and potential thereof. It can also function as a typical shielding conductor.

  Below, the example of the manufacturing method of the electronic device 30 of this invention which concerns on embodiment shown in FIG. 6 is shown.

  First, the electronic component storage package 20 of the present invention is prepared, and the electronic component 9 is mounted on the insulating substrate 6. In this step, the electronic component 9 is accommodated in the recess 6a of the insulating substrate 6 and bonded to the bottom surface of the recess 6a with a bonding material (not shown) such as a brazing material.

  Next, the electronic component 9 and the connection electrode 12 are electrically connected to each other by connection means such as a bonding wire 11.

Next, the lid 1 is bonded onto the upper metal layer 5 on the upper surface of the insulating substrate 6. As this joining method, for example, brazing is used. In order to perform brazing, first, a frame-shaped brazing material having a shape corresponding to the shape of the upper surface metal layer 5 is disposed on the frame-shaped upper surface metal layer 5. The frame-shaped metal film 2 is disposed on the frame-shaped brazing material and the recess 6a is closed,
The lid 1 is disposed on the insulating substrate 6. After these arrangements, the brazing material is melted by heating at a predetermined temperature, and the upper surface metal layer 5 and the metal film 2 are joined, thereby joining the insulating substrate 6 and the lid 1. The electronic device 30 of the present invention is manufactured through the above steps.

  The heating means described above can be used in various ways. For example, when it is necessary to seal the recess 6a in which the electronic component 9 is housed in a vacuum state (so-called vacuum sealing), the lid body is used in a vacuum environment. Since 1 and the insulating substrate 6 are joined, heating by infrared irradiation (heating by radiation) is performed as a heating means. In addition, not only in the case of vacuum sealing, heating by infrared rays may be performed depending on convenience such as workability and economical efficiency when the lid 1 is joined.

  When heating by infrared irradiation is performed, for example, infrared rays are irradiated to the insulating substrate 6 and the lid 1 (which are positioned and arranged as described above) from an infrared light emitting device provided outside, and the infrared rays It is absorbed by the first layer 3 and the insulating substrate 6 and converted into thermal energy, and this thermal energy is transferred to the brazing material through the base 10 and the metal film 2 and heated.

  In addition, it is preferable to change the direction of irradiating infrared rays depending on the material of the base 10 in the lid 1. For example, when the material of the substrate 10 is a metal material, it is preferable to irradiate infrared rays from the side or from below rather than from above the electronic device 30. Thereby, it is possible to prevent infrared rays from being blocked by the base 10 made of a metal material, and to reliably irradiate the first layer 3 and the insulating substrate 1 located below the base 10 with infrared rays. For example, when the material of the substrate 10 is a ceramic material, it is preferable to irradiate infrared rays from above the electronic device 20. Thereby, the distance from the apparatus which irradiates infrared rays to the 1st layer 3 becomes small, and the 1st layer 3 can generate heat efficiently.

  Irradiation with infrared rays is performed by, for example, an infrared lamp heater (not shown) that emits infrared rays having a wavelength in the near infrared region described above. In this case, if a plurality of insulating substrates 6 and a plurality of lids 1 (not shown) are positioned and set together as described above, and heated by irradiating infrared rays collectively, a plurality of Multiple electronic devices can be manufactured simultaneously. Also, a plurality of wiring boards and lid bodies (not shown) each having a plurality of regions each serving as an individual wiring board or lid body are prepared, and the positioning and joining steps are further performed. You may make it easy to do.

  Next, another example of the electronic component storage package 20 and the electronic device 30 according to the embodiment of the present invention will be described with reference to FIG. In FIG. 7, the same parts as those in FIG. 7 is different from the embodiment shown in FIG. 6 in that the fifth layer 8 is provided.

  In the example shown in FIG. 7, each of the plurality of insulating layers 66 contains a second metal oxide having a lower infrared absorption rate than the first metal oxide as a main component, and the fifth layer 8 includes a plurality of layers. It is provided between the insulating layers 66 and contains the first metal oxide and absorbs infrared rays. Since the fifth layer 8 contains the first metal oxide having a relatively high infrared absorptance, the fifth layer 8 is not only from the insulating substrate 1 and the first layer 3 when irradiated with infrared rays. Since heat is also generated, the area for absorbing infrared radiation increases, and the entire insulating substrate 6 is heated more uniformly. Therefore, the joint portion between the lid 1 and the insulating substrate 6 can be heated more effectively.

  The content ratio of the first metal oxide in the fifth layer 8 is, for example, 5% by mass or more and 20% by mass or less with respect to the mass of the entire fifth layer 8. When the content rate of the first metal oxide is 5% by mass or more, the infrared absorption amount of the fifth layer 8 is increased, and the amount of heat generation can be increased. In addition, when the content of the first metal oxide is 20% by mass or less, the bonding strength between the fifth layer 8 and the insulating layer 66 can be increased.

  In the fifth layer 8, components other than the first metal oxide include, for example, a ceramic material such as the second metal oxide described above, or the connection electrode 12, the external connection terminal 7, and the upper surface metal layer 5. The metal material is mentioned. In the following description, the case where the fifth layer 8 is an insulating layer containing the first metal oxide and the second metal oxide as main components will be mainly described as an example.

  Note that, as in the example shown in FIG. 7, by providing a plurality of fifth layers 8 between the plurality of insulating layers 66, it is possible to effectively heat the entire insulating substrate 6. it can. By heating the insulating substrate 6 as a whole, it is easy to maintain the temperature of the bonded portion in the bonding process of the lid body 1. Thereby, workability | operativity, reliability, etc. of airtight sealing are improved.

  In addition, the area of the fifth layer 8 in plan view (hereinafter also simply referred to as the area of the fifth layer 8) is within a range that does not hinder the adhesion between the upper and lower insulating layers 66, and the infrared rays expected between the respective layers It is appropriately set according to conditions such as the amount of absorption (heat generation amount) and the position of the first layer 3. In this case, if the area of the fifth layer 8 extends over almost the entire area between the upper and lower insulating layers 66, the adhesion between the upper and lower insulating layers 66 may be reduced. In particular, if the fifth layer 8 is provided between the layers up to the outer periphery of the insulating layer 66, the adhesion between the insulating layers 66 at the outer periphery may be reduced, which may cause poor adhesion between layers (so-called delamination). Will increase. Therefore, the area of the fifth layer 8 is preferably in the range of about 80% of the area between the layers of the insulating layer 66 in a plan view. Further, in the outer peripheral portion of the insulating layer 66, it is preferable that the fifth layer 8 is not provided between the layers.

  The fifth layer 8 is formed as follows, for example. That is, the first metal oxide powder is added to the same ceramic material powder as the insulating layer 66 (mainly containing the second metal oxide) and kneaded with an organic solvent and a binder to produce a ceramic paste. The ceramic paste is applied to a predetermined portion of the surface of the ceramic green sheet to be the insulating layer 66 by a method such as a screen printing method, and then these ceramic green sheets are laminated and fired to form the insulating layer 66. The insulating substrate 6 provided with the fifth layer 8 at a predetermined site on the surface can be manufactured.

  Since the fifth layer 8 also contains the second metal oxide, it becomes possible to ensure the adhesion of the fifth layer 8 to the insulating layer 66 that also contains the second metal oxide as a main component. Yes. Therefore, the second metal oxide contained in the insulating layer 66 and the second metal oxide contained in the fifth layer 8 are preferably made of the same material.

  In addition, the first metal oxide included in the fifth layer 8 may be the same as described above. In particular, the first metal oxide is magnesium oxide, zirconium oxide, titanium oxide, chromium oxide, or copper oxide. In some cases, the infrared absorption rate is high, and the efficiency of conversion into thermal energy is high. Also, in terms of mixing with the second metal oxide, the adhesion of the absorption layer to the insulating layer 66, etc., these metal oxides tend to be better than other metal oxides, so it is easier. Or good.

  The infrared absorptance can be measured using a measuring means such as spectral transmittance and reflectance at the wavelength in the near infrared region described above, for example.

  Further, the infrared lamp heater may contain infrared rays having a wavelength in the far infrared region, and the absorptance with respect to the wavelength in the far infrared region can be measured by a measuring means such as spectral emissivity measurement by FTIR. .

  For example, in the case of aluminum oxide, the infrared absorption rate of the second metal oxide is about 40% including the near infrared to far infrared region.

For example, in the case of copper oxide, the infrared absorption rate of the first metal oxide is about 85% for infrared light having a wavelength in the near infrared region, and about 80% for infrared light having a wavelength in the far infrared region. is there. In the case of chromium oxide, it is about 70% for infrared rays having a wavelength in the near infrared region, and about 85% for infrared rays having a wavelength in the far infrared region.
It is.

  The infrared absorptivity of the first layer 3, the second layer 5, the third layer 12, the fourth layer 13, and the fifth layer 8 is, for example, about 50 to 95%. About 1.2 to 2 times.

  In addition, this invention is not limited to said embodiment, A various change is possible if it is in the range of the summary of this invention.

  For example, the first metal oxide may be included in the insulating layer 66. For example, chromium oxide or the like may be included in the insulating layer 66 as a coloring pigment for the insulating layer 66. However, in this case, if the content of the first metal oxide in the insulating layer 66 is excessively increased, the adhesion between the insulating layers 66 may be lowered. Therefore, the content of the first metal oxide is It is preferable not to increase too much.

DESCRIPTION OF SYMBOLS 1 ... Lid 2 ... Metal film 3 ... 1st layer 4 ... Getter material 5 ... 2nd layer 6 ... Insulating substrate
66 ... Insulating layer 6a ... Recess 7 ... External connection terminal 8 ... Fifth layer 9 ... Electronic component
10 ... Base
11 ... Bonding wire
12 ... 3rd layer
13 ... 4th layer
20 ... Electronic component storage package
30 ・ ・ ・ Electronic device

Claims (8)

A flat substrate having a lower surface and an upper surface;
A metal film provided in a frame shape on the outer periphery of the lower surface;
A first layer that is provided inside the metal film on the lower surface along the metal film, contains a first metal oxide, and absorbs infrared rays;
A getter material provided on the lower surface of the first layer;
A lid having   A flat substrate having a lower surface and an upper surface;
  A metal film provided in a frame shape on the outer periphery of the lower surface;
  A first layer that is provided inside the metal film on the lower surface along the metal film, contains a first metal oxide, and absorbs infrared rays;
  A second layer provided on the upper surface and positioned so as to overlap the metal film in a top view, containing a first metal oxide and absorbing infrared rays;
A lid having A second layer provided on the upper surface and positioned so as to overlap the metal film when viewed from above;
The lid according to claim 1, wherein the second layer contains a first metal oxide and absorbs infrared rays.   The first metal oxide is one or more metal oxides selected from magnesium oxide, zirconium oxide, titanium oxide, chromium oxide, copper oxide, manganese oxide, silicon oxide, nickel oxide, tungsten oxide and zinc oxide. The lid according to any one of claims 1 to 3, wherein:   A flat substrate having a lower surface and an upper surface;
  A metal film provided in a frame shape on the outer periphery of the lower surface;
  A fourth layer provided on the upper surface and positioned so as to overlap the metal film in a top view;
  The fourth layer contains a first metal oxide and absorbs infrared rays.
  Lid.   An upper surface including the lid according to any one of claims 1 to 5 and a mounting portion for an electronic component.
And an insulating substrate in which an outer peripheral portion of the upper surface is bonded to the metal film and the upper surface is covered with the lid.   The insulating substrate includes a plurality of insulating layers stacked on each other, and each of the plurality of insulating layers contains, as a main component, a second metal oxide having an infrared absorption rate lower than that of the first metal oxide. The electronic component storage package according to claim 6, further comprising a fifth layer that contains the first metal oxide and absorbs infrared rays, which is provided between the plurality of insulating layers.   An electronic device comprising: the electronic component storage package according to claim 6; and an electronic component mounted on the mounting portion.

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