JP6167972B2 - Deposition equipment - Google Patents

Description

  The present invention relates to a film forming apparatus for forming a film on the surface of a workpiece to be processed such as steel using plasma.

2. Description of the Related Art Conventionally, various film forming apparatuses for forming a film on the surface of a work material having conductivity such as a steel material using plasma have been proposed.
For example, a technique for forming a diamond-like carbon (hereinafter referred to as “DLC”) film on the surface of the above-described material to be processed is known from Japanese Patent Application Laid-Open No. 2004-47207.

In the technology disclosed in Patent Document 1, plasma is supplied to a peripheral region of an inner surface of a quartz window by supplying a microwave toward a material to be processed in a processing container through a quartz window that is a microwave supply port. Generated. The material to be processed is, for example, a rod, and is disposed so as to protrude from the inner surface of the quartz window into the processing container, and a sheath layer is generated in the peripheral portion of the inner surface of the quartz window of the processed material covered with the generated plasma. . Subsequently, during the supply of the microwave, the plasma generation device applies a negative bias voltage to the workpiece material.
As a result, the thickness of the sheath layer generated on the surface of the workpiece material is increased. At the same time, the supplied microwave propagates as a surface wave of high energy density along the expanded sheath layer. At this time, plasma is also generated on the surface of the material to be processed away from the periphery of the inner surface of the quartz window by the surface wave of high energy density, and a sheath layer is also generated. The newly generated sheath layer is also expanded by the negative bias voltage, and the microwave further propagates as a surface wave of high energy density along the expanded sheath layer. As a result, the plasma extends to a portion of the workpiece material away from the periphery of the quartz window, that is, from one end of the workpiece material on the quartz window side to the other end protruding into the processing container. As a result, the source gas is plasma-excited by the surface wave and becomes high-density plasma. Thereby, the DLC film forming process is performed on the entire surface of the material to be processed.

JP 2004-47207 A

  However, the film forming apparatus described in Patent Document 1 originally arranges one processing material in a processing container and forms a film on the one processing material. There is no idea of simultaneously forming films on the material. Basically, even when a conventional film forming apparatus is used, it is possible to perform simultaneous film formation on a plurality of materials to be processed, and to significantly improve the productivity of each material processed by film formation. desirable.

  The present invention has been made in order to solve the above-described problems of the prior art, and holds a plurality of workpieces in a processing vessel and applies a microwave supplied from a microwave supply port to each workpiece. It is an object of the present invention to provide a film forming apparatus capable of performing simultaneous film formation on a plurality of workpieces evenly by devising a configuration that is dispersed.

  According to a first aspect of the present invention, there is provided a film forming apparatus including: a gas supply unit that supplies a raw material gas and an inert gas to a processing container; and a microwave for generating plasma along a processing surface of a conductive workpiece. A microwave supply unit to be supplied, a negative voltage application unit to apply a negative bias voltage for expanding a sheath layer along the processing surface of the workpiece, and a microwave supplied from the microwave supply unit have been enlarged A microwave supply port that propagates as a surface wave to the sheath layer, and a conductive propagation part that is disposed so as to protrude from the microwave supply port and that propagates the microwave from the microwave supply port as a surface wave And a plurality of holding portions for holding a plurality of workpieces, and electrically connected to the propagation portion and the workpiece, and the surface waves propagated to the propagation portions are converted into the plurality of workpieces. Characterized in that it and a dispersion unit for dispersing the.

  The film forming apparatus according to claim 2 is the film forming apparatus according to claim 1, wherein the dispersion unit includes a transmission unit that transmits microwaves between the plurality of holding units and the propagation unit. It is characterized by.

  The film forming apparatus according to claim 3 is the film forming apparatus according to claim 1 or 2, wherein the propagation unit is disposed at a center of the dispersion unit connected to the plurality of holding units, and the plurality of holding units. Is arranged at the end of the dispersion part, and the dispersion part has a shape with different widths perpendicular to the longitudinal direction from the propagation part to the holding part between the propagation part and the holding part. Features.

  The film forming apparatus according to a fourth aspect is the film forming apparatus according to the third aspect, wherein the region where the width is the minimum width is between the propagation unit and the holding unit. It is provided in the periphery.

  The film forming apparatus according to claim 5 is the film forming apparatus according to claim 2 or 4, wherein the transmission part or the region having the minimum width is symmetrical with a straight line connecting the propagation part and the holding part. It is characterized by being provided symmetrically about the axis.

  The film forming apparatus according to a sixth aspect is the film forming apparatus according to the second aspect, wherein the transmission portion is located at a position from the propagation portion to each of the plurality of holding portions, with the propagation portion as a center and from the propagation portion. Are provided at the same distance.

  A film forming apparatus according to a seventh aspect is the film forming apparatus according to any one of the first to sixth aspects, wherein the base material holding part is along a direction in which the propagation part protrudes from the microwave supply port. The dispersive part is arranged at a distance from the propagation part, and the dispersion part has a polygonal shape having a long side in a direction from the propagation part toward the base material holding part.

  A film forming apparatus according to an eighth aspect is the film forming apparatus according to any one of the first to seventh aspects, wherein the negative voltage application unit applies the plurality of workpieces disposed in the dispersion unit. An electrode having a voltage higher than the negative voltage is disposed in non-contact with the workpiece and the dispersion portion.

  In the film forming apparatus according to claim 1, a plurality of conductive propagation portions that are arranged to protrude from the microwave supply port and propagate a surface wave based on the microwave from the microwave supply port and a plurality of workpieces are held. And a dispersion unit that is commonly connected to the propagation unit and the plurality of holding units, and disperses the surface wave propagated to the propagation unit to a plurality of workpieces held by the plurality of holding units. Electrically connecting the plurality of workpieces, the dispersion portion, and the propagation portion, and applying a negative voltage to any of the plurality of workpieces, the dispersion portion, and the propagation portion by the negative voltage application portion. Thereby, the surface wave based on the microwave propagated from the microwave supply port to the propagation part can be dispersed to each workpiece to be held by the plurality of holding parts via the dispersion part. Thereby, since uniform high-density plasma can be generated around each workpiece, it is possible to apply a plurality of workpieces to the workpiece without providing a plurality of microwave supply ports corresponding to each workpiece. Film formation at the same time.

  In the film forming apparatus according to claim 2, the dispersion unit transmits the microwave between the plurality of holding units that hold the plurality of workpieces and the propagation unit that is common to the plurality of workpieces. Department. As a result, the surface wave based on the microwave propagating from the microwave supply port along the propagation part is transmitted through the transmission part, and as a result, the surface wave that travels around the dispersion part and propagates to the workpiece. In addition, the surface wave transmitted through the transmission part can be propagated to the workpiece. Therefore, it is possible to perform uniform film formation on a plurality of workpieces simultaneously by reducing unevenness of surface waves propagating through each workpiece and generating uniform plasma around each workpiece. It becomes possible.

  In the film forming apparatus according to claim 3, the propagation part is disposed at the center of the dispersion part, the plurality of holding parts are disposed from the propagation part to the end part, and the dispersion part is disposed between the propagation part and the holding part. The width orthogonal to the longitudinal direction from the propagation part to the holding part is different. As a result, the surface wave based on the microwave propagating from the microwave supply port along the propagation portion enters not only the surface wave that travels around the dispersion portion and propagates to the workpiece, but also enters from a narrow region. Surface waves can also be propagated to the workpiece. Therefore, it is possible to perform uniform film formation on a plurality of workpieces simultaneously by reducing unevenness of surface waves propagating through the workpieces and generating uniform plasma around each workpiece. Is possible.

  The propagation unit is disposed so as to protrude from the microwave supply port. Furthermore, in the film forming apparatus according to a fourth aspect, the region having the minimum width is provided around the propagation unit between the propagation unit and the holding unit. Thereby, the surface wave based on the microwave propagating from the microwave supply port along the propagation part is propagated through the region having the minimum width corresponding to the microwave supply port, and as a result, around the dispersion part. It is possible to propagate not only the surface wave that wraps around and propagates to the workpiece, but also the surface wave that enters from the notch to the workpiece. Therefore, it is possible to perform uniform film formation on a plurality of workpieces simultaneously by reducing unevenness of surface waves propagating through the workpieces and generating uniform plasma around each workpiece. Is possible.

  In the film forming apparatus according to the fifth aspect, the transmission part or the region having the smallest width is provided in line symmetry with a straight line connecting the propagation part and the holding part as the axis of symmetry. As a result, the transmission portion or the region having the smallest width is uniformly arranged on both sides of the propagation portion and the holding portion, and the surface wave generated around each workpiece is made uniform to each workpiece. By generating uniform plasma around the member, uniform film formation can be performed simultaneously on each of the plurality of workpieces.

  In the film forming apparatus according to claim 6, since the transmission part is provided at a position from the propagation part to each holding part at a position where the distance from the propagation part is equal, centering on the propagation part, By making uniform the surface wave generated around the substrate and generating uniform plasma around each workpiece, uniform film formation can be performed simultaneously on each of the workpieces. .

  In the film forming apparatus according to the seventh aspect, the dispersion part has a long side in the direction from the propagation part to the base material holding part. That is, in the dispersion part, the direction from the propagation part toward the base material holding part is the longitudinal direction. Thereby, the surface wave of the microwave propagated to the propagation part is easily dispersed toward the substrate holding part along the longitudinal direction of the dispersion part, and the plasma necessary for film formation around the substrate holding part. The production efficiency of can be improved.

  In the film forming apparatus according to claim 8, an electrode having a voltage higher than the negative voltage applied by the negative voltage application unit between the plurality of workpieces arranged in the dispersion unit is formed between the workpiece and the dispersion unit. Arranged non-contact. As a result, a sufficient potential difference due to the negative voltage applied from the negative voltage application unit is ensured between the workpieces, and plasma is efficiently generated around the workpieces to provide a plurality of workpieces. It is possible to perform uniform film formation on the workpiece at the same time.

It is explanatory drawing which shows schematic structure of the film-forming apparatus which concerns on 1st Embodiment. It is a top view of the dispersion | distribution part to which the workpiece material was attached. It is explanatory drawing which shows typically the plasma formed around a dispersion | distribution part and a to-be-processed material. It is a top view which shows the 1st modification of the dispersion | distribution part in the film-forming apparatus of 1st Embodiment. It is a top view which shows the 2nd modification of the dispersion | distribution part in the film-forming apparatus which concerns on 1st Embodiment. It is a top view which shows the 3rd modification of the dispersion | distribution part in the film-forming apparatus which concerns on 1st Embodiment. It is a top view which shows the 4th modification of the dispersion | distribution part in the film-forming apparatus which concerns on 1st Embodiment. It is a top view which shows the 5th modification of the dispersion | distribution part in the film-forming apparatus which concerns on 1st Embodiment. It is a top view which shows the 6th modification of the dispersion | distribution part in the film-forming apparatus which concerns on 1st Embodiment. It is a top view which shows the 7th modification of the dispersion | distribution part in the film-forming apparatus which concerns on 1st Embodiment. It is a schematic side view which shows the 8th modification of the dispersion | distribution part in the film-forming apparatus which concerns on 1st Embodiment. It is a schematic side view which shows the 9th modification of the dispersion | distribution part in the film-forming apparatus which concerns on 1st Embodiment. It is explanatory drawing which shows schematic structure of the film-forming apparatus which concerns on 2nd Embodiment. It is explanatory drawing which shows typically the state which has arrange | positioned the ground electrode between each to-be-processed material attached to the dispersion | distribution part. It is a model perspective view which shows the other example of the dispersion | distribution part in the film-forming apparatus which concerns on 1st Embodiment. In the example shown in FIG. 15, it is explanatory drawing which shows typically the plasma formed around a dispersion part and a to-be-processed material. It is a schematic perspective view which shows the further another example of the dispersion | distribution part in the film-forming apparatus which concerns on 1st Embodiment. It is a schematic perspective view which shows the further another example of the dispersion | distribution part in the film-forming apparatus which concerns on 1st Embodiment. It is a model perspective view which shows the other example of the dispersion | distribution part in the film-forming apparatus which concerns on 2nd Embodiment.

  Hereinafter, a film forming apparatus according to the present invention will be described in detail with reference to the drawings based on a first embodiment and a second embodiment that embody the present invention. First, a schematic configuration of the film forming apparatus 1 according to the first embodiment will be described with reference to FIGS. 1 to 3.

  FIG. 1 is a schematic diagram illustrating an overall configuration of a film forming apparatus 1 according to the first embodiment. As shown in FIG. 1, the film forming apparatus 1 according to the present embodiment includes a processing container 2, a vacuum pump 3, a vacuum gauge 4, a gas supply unit 5, a control unit 6, and the like. The processing container 2 is made of metal such as stainless steel and has a hermetic structure. The vacuum pump 3 is a pump capable of evacuating the inside of the processing container 2 via a pressure adjusting valve 7 described later. A microwave supply port 22 is provided inside the processing container 2.

The gas supply unit 5 supplies a film forming source gas and an inert gas into the processing container 2. Specifically, an inert gas such as He, Ne, Ar, Kr, or Xe and a source gas such as CH ₄ , C ₂ H ₂ , or TMS (tetramethylsilane) are supplied. In the present embodiment, CH ₄ and TMS source gases are used for film formation.

The flow rates and pressures of the source gas and the inert gas supplied from the gas supply unit 5 may be controlled by the control unit 6 described later, or may be controlled by an operator. The pressure is measured by the vacuum gauge 4 and the measurement result is input to the control unit 6. The source gas may be a gas containing a compound having a CH bond such as alkyne, alkene, alkane, aromatic compound, or a compound containing carbon. H ₂ may be included in the source gas.

A plurality of (three in FIG. 1) work materials 8 having conductivity are provided on the rod-shaped surface inside the processing container 2. The work material 8 is held by a conductive holder 9 made of stainless steel or the like. The work material 8 has a lower end formed in a concave shape. The holder 9 has a plurality (three in the first embodiment) of holding parts 9C corresponding to the number of propagation parts 9A, dispersion parts 9B, and the work material 8. The holding part 9C is arranged in a convex shape with respect to the dispersion part 9B. When the work material 8 is held by the jig 9, the end of the work material 8 that is formed in a concave shape is fitted into the convex portion of the holding part 9 </ b> C.
Here, the propagation portion 9A has a lower end fitted into the microwave supply port 22 so as to protrude from the microwave supply port 22, and the surface wave based on the microwave propagated from the microwave supply port 22 is directed upward. It is formed from a rod-shaped conductive metal material that propagates toward the surface.
As shown in FIG. 2, the dispersing portion 9B is formed in a rectangular shape from a conductive plate-like metal material, and has three conductive holding portions 9C on the upper surface according to the number of materials to be processed. Is erected. In the dispersion portion 9B, a transmission slit 9D that transmits microwaves is formed between the holding portions 9C.

As shown in FIG. 2, the transmission slit 9 </ b> D includes a propagation portion 9 </ b> A (provided corresponding to the central workpiece material 8, see FIG. 1) and a holding portion 9 </ b> C (corresponding to the workpiece materials 8 on both sides). And a straight line connecting the two axes of the symmetry axis L, the line is symmetrical. As a result, the transmission slits 9D are evenly arranged on both sides of the axis of symmetry L connecting the propagation part 9A and the holding part 9C.
Further, as shown in FIG. 2, the transmission slit 9D is provided at a position from the propagation part 9A to each holding part 9C at a position where the distance from the propagation part 9A is equal, centering on the propagation part 9A.
Further, as shown in FIG. 3, the transmission slit 9D is formed to be inclined in a direction extending outward from the propagation portion 9A at the dispersion portion 9B.

Further, as described above, the dispersion portion 9B transmits microwaves between the plurality of holding portions 9C that hold the plurality of workpiece materials 8 and the propagation portion 9A that is common to the plurality of workpiece materials 8. Since the transmission slit 9D to be transmitted is formed, the surface wave based on the microwave propagating from the microwave supply port 22 along the propagation portion 9A is transmitted and propagated through the transmission slit 9D. Not only the surface wave that circulates from the surroundings and propagates to the workpiece material 8, but also the surface wave that has passed through the transmission slit 9D can propagate to the workpiece material 8. Therefore, uniform film formation is simultaneously performed on each of the plurality of work materials 8 by reducing the unevenness of the surface wave propagating to each work material 8 and generating a uniform plasma around each work material 8. Can be performed.
Each of the plurality of holding portions 9C holds the workpiece 8 in an upright state.

  As described above, the propagation unit 9A, the dispersion unit 9B, and the holding unit 9C constituting the holder 9 have conductivity, and thus the propagation unit 9A, the dispersion unit 9B, and the holding unit 9C are electrically connected. It is in a connected state.

  A dielectric such as quartz is disposed between the central conductor 21A of the coaxial waveguide 21 and the lower end portion of the propagation portion 9A in the holder 9 fitted to the microwave supply port 22 in order to maintain a vacuum. Is done.

  The material of the work material 8 is not particularly limited as long as the surface has conductivity, but in this embodiment, it is low-temperature tempered steel. Here, the low temperature tempered steel is a material such as JIS G4051 (carbon steel material for mechanical structure), G4401 (carbon tool steel material), G44-4 (steel material for alloy tool), or maraging steel material. In addition to the low-temperature tempered steel, the work material 8 may be ceramic or resin in which a conductive material is coated.

  In the processing container 2, the central conductor 21 </ b> A of the coaxial waveguide 21 is extended at the center of the microwave supply port 22. The outer peripheral surface excluding the upper end surface of the microwave supply port 22, that is, the outer peripheral surface excluding the microwave introduction surface 22A, is covered with a side conductor 23 formed of a metal such as stainless steel. The side conductors 23 are fixed to the inner side surface of the processing container 2 by screws or the like, and are electrically connected to the processing container 2.

  Inside the processing container 2, plasma is generated for performing the DLC film forming process on each workpiece material 8 held by the holder 9 as described above. This plasma is generated by the microwave pulse controller 11, the microwave oscillator 12, the microwave power source 13, the negative voltage power source 15, and the negative voltage pulse generator 16. In the present embodiment, surface wave excitation plasma is generated by a method disclosed in JP 2004-47207 A (hereinafter referred to as “MVP method (Microwave shear-Voltage combination Plasma method)”). In the following description, the MVP method will be described.

  The microwave pulse control unit 11 oscillates a pulse signal in accordance with an instruction from the control unit 6. The oscillated pulse signal is transmitted to the microwave oscillator 12. The microwave oscillator 12 generates a microwave pulse according to the pulse signal from the microwave pulse controller 11. The microwave power source 13 supplies power to the microwave oscillator 12 that oscillates a microwave of 2.45 GHz with the instructed output in accordance with an instruction of the control unit 6. The microwave oscillator 12 supplies a 2.45 GHz microwave in the form of a pulse according to a pulse signal from the microwave pulse control unit 11 and supplies it to an isolator 17 described later. Note that the microwave is not limited to 2.45 GHz, but may have a frequency of 0.3 GHz to 50 GHz.

  The microwave passes from the microwave oscillator 12 to the isolator 17, the tuner 18, the waveguide 19, and the coaxial waveguide 21 protruding from the waveguide 19 via a coaxial waveguide converter (not shown). The material is supplied into the processing container 2 from the microwave introduction surface 22A of the microwave supply port 22 made of a dielectric material or the like that transmits microwaves such as quartz. The isolator 17 prevents the reflected wave of the microwave from returning to the microwave oscillator 12. The tuner 18 matches the impedances before and after the tuner 18 so that the reflected wave of the microwave is minimized.

  The film forming apparatus 1 includes a negative voltage power supply 15, a negative voltage pulse generator 16, and a negative voltage application electrode 25. The negative voltage power supply 15 is connected to the control unit 6. The negative voltage power supply 15 supplies a negative bias voltage to the negative voltage pulse generator 16 in accordance with an instruction from the controller 6. The negative voltage pulse generator 16 pulsates the negative bias voltage supplied from the negative voltage power supply 15 into a pulsed negative bias voltage. This pulsing process is a process in which the negative voltage pulse generator 16 controls the magnitude, cycle, and duty ratio of a negative bias voltage pulse in accordance with an instruction from the controller 6. The negative voltage application electrode 25 is electrically connected to the work material 8.

As described above, the propagation part 9A, the dispersion part 9B, and the holding part 9C constituting the holder 9 are electrically conductive, and the propagation part 9A, the dispersion part 9B, and the holding part 9C are electrically connected. It is in a connected state. For this reason, the negative voltage application electrode 25 may be connected to the propagation part 9A and the dispersion part 9B other than the material 8 to be processed.
In this case, since the work material 8 does not have a contact point with the negative voltage application electrode 25, a film is formed over the entire portion other than the contact point with the holder 9.

  A negative negative bias voltage is applied to the workpiece 8 by the negative voltage application electrode 25. Even when the work material 8 is a metal substrate, or a ceramic or resin is coated with a conductive material, at least the entire processing surface of the work material 8 has a pulsed negative bias voltage. Is applied. A pulsed negative bias voltage is also applied to the entire surface of the holder 9 via the workpiece 8. In addition, when the holder 9 is formed of a conductive material, the material 8 to be processed, the dispersing portion 9B, and the propagation portion 9A are electrically connected via the holder 9. At this time, the negative voltage application electrode 25 may apply a voltage to the workpiece 8 by applying a pulsed negative bias voltage to the holder 9.

  When a negative bias voltage is applied to the propagation part 9A, the dispersion part 9B, and the work material 8 by the negative voltage application electrode 25, the thickness of the sheath layer generated by supplying the microwave from the microwave introduction surface 22A Is expanded around the propagation part 9A, the dispersion part 9B, and the workpiece 8. The microwave is propagated as a surface wave to the processing surface of the propagation part 9A, the dispersion part 9B, and the workpiece material 8 along the sheath layer expanded around the propagation part 9A, the dispersion part 9B, and the work material 8. . By supplying a pulsed microwave and applying a pulsed negative bias voltage at the same time, a surface wave excited plasma 28 is generated as shown in FIG.

[Detailed explanation of surface wave excitation plasma]
Usually, when generating surface wave excitation plasma, first, a microwave is supplied along an interface between a plasma having a certain level of electron (ion) density and a dielectric in contact with the plasma. The supplied microwave is propagated as a surface wave with the energy of electromagnetic waves concentrated on this interface. As a result, the plasma in contact with the interface is excited by a high energy density surface wave and further amplified. Thereby, a high density plasma is generated and maintained. However, when this dielectric is replaced with a conductive material, the conductive material does not function as a surface wave waveguide, and preferable surface wave propagation and plasma excitation cannot occur.

  On the other hand, an essentially unipolar charged particle layer, a so-called sheath layer, is formed near the surface of an object in contact with plasma. In the case where the object is a work material 8 having conductivity to which a negative bias voltage is applied, the sheath layer is a layer having a low electron density, that is, a positive polarity, and substantially has a relative dielectric constant in the microwave frequency band. It is a layer of ε≈1. For this reason, the sheath thickness of the sheath layer can be increased by making the absolute value of the negative bias voltage to be applied larger than the absolute value of, for example, −100V. That is, the sheath layer expands. This sheath layer acts as a dielectric that propagates surface waves to the interface between the plasma and the object in contact with the plasma.

  Accordingly, the microwave is supplied from the microwave supply port 22 disposed in the vicinity of the propagation portion 9 </ b> A of the holder 9 that holds the workpiece 8, and the workpiece 8 and the holding are held via the negative voltage application electrode 25. When a negative bias voltage is applied to the tool 9, the microwave propagates as a surface wave along the interface between the sheath layer and the plasma. As a result, a high-density excitation plasma 28 based on surface waves is generated along the surfaces of the workpiece 8 and the holder 9.

Here, the process in which the plasma 28 is generated around the holder 9 and the workpiece 8 will be described with reference to FIG.
As shown in FIG. 3, the propagation part 9 </ b> A and the work material 8 are respectively disposed on opposing surfaces of the dispersion part 9 </ b> B. Specifically, in the plate-like dispersion portion 9B, the holder 9 and the work material 8 are disposed on the upper surface side, and the propagation portion 9A is disposed on the lower surface side. The surface wave based on the microwave emitted from the microwave supply port 22 is propagated upward along the propagation part 9A, and is propagated along the lower surface of the dispersion part 9B as indicated by an arrow A. Thereby, the surface wave based on the microwave is propagated to the outside of the workpiece 8 disposed on both sides of the dispersion portion 9B, and at the same time, a part of the surface wave based on the microwave propagating on the lower surface of the dispersion portion 9B is As shown by an arrow B, the light passes through each transmission slit 9D and propagates to the upper surface side of the dispersion portion 9B. Further, as indicated by an arrow C, the surface wave based on the microwave transmitted through each transmission slit 9 </ b> D propagates along the inner periphery facing each other work material 8. As a result, as shown in FIG. 3, a sufficiently high-density plasma 28 is generated around the propagation portion 9 </ b> A, the dispersion portion 9 </ b> B, and each workpiece material 8 that constitute the holder 9.

The electron density of the high-density plasma due to surface wave excitation in the vicinity of the surface of the workpiece 8 reaches 10 ¹¹ to 10 ¹² cm ⁻³ . When the DLC film formation process is performed by plasma CVD using the MVP method, the film formation speed is 3 to 30 (nanometers / second), which is one to two orders of magnitude higher than the case where the DLC film formation process is performed by normal plasma CVD. Therefore, high-speed film formation is possible.

  The negative voltage power supply 15 and the negative voltage pulse generator 16 are examples of the negative voltage application unit of the present invention. The microwave pulse control unit 11, the microwave oscillator 12, the microwave power source 13, the isolator 17, the tuner 18, the waveguide 19, and the coaxial waveguide 21 are examples of the microwave supply unit of the present invention. The film forming apparatus 1 includes the negative voltage power supply 15 and the negative voltage pulse generator 16, but may further include a positive voltage power supply and a positive voltage pulse generator, or instead of the negative voltage pulse generator 16. In addition, a negative voltage generator for applying a continuous negative bias voltage instead of a pulsed negative bias voltage may be provided.

  In the film forming apparatus 1, a radiation thermometer 29 is disposed at a position near the outside of the quartz window 27 provided on the side wall of the processing container 2. The radiation thermometer 29 continuously measures the surface temperature of an arbitrary position of the processing surface from the upper end portion to the lower end portion of the processing material 8 among the processing surface of the processing material 8. The radiation thermometer 29 is electrically connected to the control unit 6.

  As described above, in the film forming apparatus 1 according to the first embodiment, the conductive propagation portion 9 </ b> A that projects from the microwave supply port 22 and propagates the surface wave based on the microwave from the microwave supply port 22. The plurality of holding portions 9C that hold the plurality of workpieces 8 and the propagation waves 9A and the plurality of holding portions 9C that are connected in common and the surface waves propagated to the propagation portions 9A are connected to the plurality of holding portions 9C. A dispersion portion 9B that disperses the plurality of work materials 8 held by the plurality of work materials 8, and electrically connects the plurality of work materials 8, the dispersion portions 9B, and the propagation portions 9A, and the negative voltage application electrode 25 The surface wave based on the microwave propagated through the propagation portion 9A from the microwave supply port 22 by applying a negative voltage to any of the plurality of work materials 8, the dispersion portion 9B, and the propagation portion 9A. 9B It can be dispersed in the work piece 8 held by the holding portion 9C of. Thereby, since uniform high-density plasma can be generated around each workpiece material 8, a plurality of workpiece materials can be provided without providing a plurality of microwave supply ports or the like corresponding to each workpiece material 8. 8 can be simultaneously formed.

  In addition, a transmission slit 9D that transmits microwaves is provided in the dispersion portion 9B between a plurality of holding portions 9C that hold a plurality of workpiece materials 8 and a propagation portion 9A that is common to the plurality of workpiece materials 8. I have. Thereby, the surface wave based on the microwave propagating from the microwave supply port 22 along the propagation portion 9A is transmitted through the transmission slit 9D. As a result, not only the surface wave that travels from the periphery of the dispersion portion 9B and propagates to the workpiece material 8, but also the surface wave that has passed through the transmission slit 9D can propagate to the workpiece material 8. Therefore, uniform film formation is simultaneously performed on each of the plurality of work materials 8 by reducing the unevenness of the surface wave propagating to each work material 8 and generating a uniform plasma around each work material 8. Can be performed.

  Further, the transmission slit 9D is provided in line symmetry with a straight line connecting the propagation part 9A and the holding part 9C as the symmetry axis L. As a result, the transmission slits 9D are evenly arranged on both sides of the straight line (symmetric axis L) connecting the propagation portion 9A and the holding portion 9C, and the surface waves generated around the workpiece material 8 are made uniform. By generating uniform plasma around each workpiece material 8, uniform film formation can be performed simultaneously on each of the plurality of workpiece materials 8.

  Further, since the transmission slit 9D is provided at a position from the propagation part 9A to each holding part 9C at a position where the distance from the propagation part 9A is equal with the propagation part 9A as the center, By making uniform the surface waves generated in the process and generating a uniform plasma around each work material 8, it becomes possible to simultaneously form a uniform film on each of the work materials 8. .

Next, a first modification of the dispersion unit 9B in the film forming apparatus 1 according to the first embodiment will be described with reference to FIG.
In FIG. 4, the transmission slit 9 </ b> D in the rectangular dispersion portion 9 </ b> B constituting the holder 9 is formed so as to be in contact with the peripheral edge of the work material 8 held in the central holding portion 9 </ b> C (see FIG. 1). . Further, the transmission slit 9D is provided in line symmetry with a straight line connecting the propagation part 9A and the holding part 9C as the symmetry axis L. Accordingly, the transmission slits 9D are evenly arranged on both sides of the straight line (symmetric axis L) connecting the propagation part 9A and the holding part 9C. Further, the transmission slit 9D is provided at a position from the propagation part 9A to each holding part 9C at a position where the distance from the propagation part 9A is equal, centering on the propagation part 9A.

Next, a second modification of the dispersion unit 9B in the film forming apparatus 1 according to the first embodiment will be described with reference to FIG.
In FIG. 5, the dispersion | distribution part 9B which comprises the holder 9 has the structure connected with the two connection parts 9E narrower than the to-be-processed material 8 hold | maintained at the holding part 9C (refer FIG. 1). A transmission slit 9D is formed between the workpieces 8 and between the two connecting portions 9E. Further, the transmission slit 9D is provided in line symmetry with a straight line connecting the propagation part 9A and the holding part 9C as the symmetry axis L. Thereby, the transmissive slits 9D are evenly arranged on both sides of the straight line (symmetric axis L) connecting the propagation part 9A and the holding part 9C.

Next, a third modification of the dispersion unit 9B in the film forming apparatus 1 according to the first embodiment will be described with reference to FIG.
In FIG. 6, each of the rectangular dispersion portions 9 </ b> B constituting the holder 9 includes a plurality (six in FIG. 6) of workpiece materials 8 held by the holder 9 </ b> C (see FIG. 1). A transmission hole 9F is formed. Further, each transmission hole 9F is provided in line symmetry with a straight line connecting the propagation part 9A and the holding part 9C as a symmetry axis L. Specifically, in FIG. 6, among the two groups of transmission holes 9F existing between the work materials 8, the center of the two transmission holes 9F in the center row and the center of each work material 8 in each group. The transmission holes 9F are equally arranged on both sides of the symmetry axis L with the straight line passing through Further, each group of transmission holes 9F is provided at a position from the propagation part 9A to each holding part 9C at a position where the distance from the propagation part 9A is equal, centering on the propagation part 9A.

Next, a fourth modification of the dispersion unit 9B in the film forming apparatus 1 according to the first embodiment will be described with reference to FIG.
In FIG. 7, the disc-shaped dispersion portion 9B constituting the holder 9 is provided with five holding portions 9C (see FIG. 1) in a cross shape, and each holding portion 9C has a workpiece material, respectively. 8 is attached. The central holding portion 9C corresponds to the propagation portion 9A (see FIG. 1) existing below the center holding portion 9C. In addition, transmission slits 9D (four transmission slits 9D in total) are formed between the five work materials 8 attached to each holding portion 9C. Each transmission slit 9D is provided in line symmetry with two straight lines connecting the propagation part 9A and each holding part 9C as symmetry axes L1 and L2. Specifically, in FIG. 7, among the four transmission slits 9D existing between the workpieces 8, the two transmission slits 9D are equally arranged on both sides of the symmetry axis L1. Similarly, the remaining two transmission slits 9D are equally arranged on both sides of the symmetry axis L2. Further, each of the four transmission slits 9D is provided in a position from the propagation unit 9A to each holding unit 9C at a position where the distance from the propagation unit 9A is equal, centering on the propagation unit 9A.

  In the first to fourth modifications of the dispersion unit 9B in the film forming apparatus according to the first embodiment described above, the dispersion unit 9B is provided with a transmission slit 9D or a transmission hole 9F. Thereby, the surface wave based on the microwave propagating along the propagation portion 9A existing below the workpiece 8 disposed in the center from the microwave supply port 22 passes through each transmission slit 9D or the transmission hole 9F. And transmitted to each workpiece material 8. As a result, not only the surface wave that travels from the periphery of the dispersion portion 9B and propagates to the work material 8, but also the surface wave that has passed through each transmission slit 9D or the transmission hole 9F can propagate to the work material 8. . Therefore, uniform film formation is simultaneously performed on each of the plurality of work materials 8 by reducing the unevenness of the surface wave propagating to each work material 8 and generating a uniform plasma around each work material 8. Can be performed.

  Further, each transmission slit 9D or each transmission hole 9F is provided in line symmetry with a straight line connecting the propagation portion 9A and the holding portion 9C as an axis of symmetry L. Thereby, the transmission slit 9D or each transmission hole 9F is equally arranged on both sides of the straight line (symmetric axis L) connecting the propagation part 9A and the holding part 9C. Further, the transmission slit 9D or each transmission hole 9F is provided at a position from the propagation unit 9A to each holding unit 9C at the same distance from the propagation unit 9A with the propagation unit 9A at the center. The transmission slits 9D or the transmission holes 9F may be evenly arranged in the region from the central propagation unit 9A to the holding unit 9C in the dispersion unit 9B. By providing the dispersion unit 9B with at least one of the configurations, the film forming apparatus 1 makes the surface wave generated around each workpiece material 8 uniform so as to be uniform around each workpiece material 8. By generating plasma, uniform film formation can be performed simultaneously on each of the plurality of workpiece materials 8.

Next, a fifth modification of the dispersion unit 9B in the film forming apparatus 1 according to the first embodiment will be described with reference to FIG.
In FIG. 8, three holding parts 9 </ b> C (see FIG. 1) are arranged in the rectangular dispersion part 9 </ b> B toward the end along the length direction of the dispersion part 9 </ b> B. A work material 8 is attached. Here, a propagation unit 9A is arranged below the holding unit 9C (in a direction perpendicular to the paper surface) at the center (central position) of the dispersion unit 9B.

  In addition, the width of the dispersion unit 9B that is orthogonal to the longitudinal direction from the propagation unit 9A to each holding unit 9C is different from the propagation unit 9A to each holding unit 9C. Is provided with a notch 9G narrower than the maximum width. The notch portion 9G is provided in line symmetry with a straight line connecting the propagation portion 9A and each holding portion 9C as a symmetry axis L. Specifically, the notches 9G are equally arranged on both sides of the workpiece 8 at the center position corresponding to the propagation portion 9A. Further, the respective notches 9G are equally arranged on both sides of the symmetry axis L. Furthermore, as shown in FIG. 8, each notch 9G is provided in the periphery of the workpiece 8 at the center position, specifically, in the periphery of the propagation portion 9A. Here, since the propagation portion 9 </ b> A is disposed so as to protrude from the microwave supply port 22, the notch portion 9 </ b> G corresponds to the microwave supply port 22.

Next, a sixth modification of the dispersion unit 9B in the film forming apparatus 1 according to the first embodiment will be described with reference to FIG.
In FIG. 9, in the dispersion portion 9B, three holding portions 9C (see FIG. 1) are arranged toward the end portions along the length direction of the dispersion portion 9B, and each holding portion 9C is covered. A work material 8 is attached. Here, a propagation part 9A (see FIG. 1) is arranged below the holding part 9C at the center (central position) of the dispersion part 9B.

  Further, the dispersion unit 9B is formed in a shape gradually inclined along the longitudinal direction from the propagation unit 9A to each holding unit 9C between the propagation unit 9A and each holding unit 9C. Two notches 9G are formed around the propagation portion 9A on both sides of the workpiece 8 at the center position corresponding to the portion 9A. The notch portion 9G is provided in line symmetry with a straight line connecting the propagation portion 9A and each holding portion 9C as a symmetry axis L. Specifically, the notches 9G are equally arranged on both sides of the workpiece 8 at the center position corresponding to the propagation portion 9A. Further, the dispersion portion 9B has a base at a position in contact with the propagation portion 9A, is inclined so that the width becomes narrower toward the workpiece material 8 at both ends, and the vertex intersects the periphery of the workpiece material 8 at both ends. It is triangular.

Next, a seventh modification of the dispersion unit 9B in the film forming apparatus 1 according to the first embodiment will be described with reference to FIG.
In FIG. 10, in the dispersion portion 9B, three holding portions 9C (see FIG. 1) are arranged toward the end along the length direction of the dispersion portion 9B, and each holding portion 9C is covered with each of the holding portions 9C. A work material 8 is attached. Here, a propagation unit 9A is arranged below the holding unit 9C (in a direction perpendicular to the paper surface) at the center (central position) of the dispersion unit 9B.

  Here, as shown in FIG. 10, the width of the dispersion portion 9 </ b> B is narrower than the diameter of each workpiece material 8. Thereby, the notch part 9G will be formed in the dispersion | distribution part 9B from the propagation part 9A to each holding | maintenance part 9C. The notch portion 9G is provided in line symmetry with a straight line connecting the propagation portion 9A and each holding portion 9C as a symmetry axis L. Specifically, the notch portions 9G are evenly arranged on both sides of the dispersion portion 9B between the workpiece material 8 at the center position corresponding to the propagation portion 9A and the workpiece material 8 at both ends. Yes. Further, the respective notches 9G are equally arranged on both sides of the symmetry axis L.

  In the fifth modification to the seventh modification of the dispersion unit 9B in the film forming apparatus according to the first embodiment described above, each of the propagation units 9A to the respective holding units 9C is connected to the dispersion unit 9B. The width perpendicular to the longitudinal direction toward the holding portion 9C is different, and a notch portion 9G having a width perpendicular to the longitudinal direction narrower than the maximum width is provided between the propagation portion 9A and each holding portion 9C. . Thereby, the surface wave based on the microwave propagating from the microwave supply port 22 along the propagation portion 9A is propagated through the notch portion 9G. As a result, not only the surface wave that travels from the periphery of the dispersion portion 9B and propagates to the workpiece material 8, but also the surface wave that has entered from the notch portion 9G can propagate to the workpiece material 8. Therefore, uniform film formation is simultaneously performed on each of the plurality of work materials 8 by reducing the unevenness of the surface wave propagating through each work material 8 and generating a uniform plasma around each work material 8. Can be performed. In particular, in the sixth modified example of the dispersing unit 9B in the film forming apparatus according to the first embodiment, the dispersing unit 9B is inclined so that the width becomes narrower toward the workpiece 8 at both ends, and the apex is covered at both ends. Since it has a triangular shape that intersects with the periphery of the processing material 8, the surface wave is propagated to the processing material 8 without going around the dispersion portion 9 </ b> B at both ends.

  In addition, since the notches 9G are evenly arranged on both sides of the symmetry axis L, the surface waves generated around each workpiece material 8 are made uniform around each workpiece material 8. By generating uniform plasma, uniform film formation can be simultaneously performed on each of the plurality of workpieces 8.

Next, an eighth modification of the dispersion unit in the film forming apparatus according to the first embodiment will be described with reference to FIG.
In the eighth modification shown in FIG. 11, another dispersing portion 9B is disposed on the upper end surface of each workpiece 8 attached to each holding portion 9C (see FIG. 1) on the dispersing portion 9B of the holder 9. Has been. In such a configuration, the upper dispersion portion 9B functions as a converging portion for converging the surface wave, whereby a discontinuous portion of the sheath layer is formed at the upper end of each workpiece material 8, thereby reducing the reflection of the surface wave. be able to. A negative voltage application electrode 25 is connected to the upper dispersion portion 9B.

Next, a ninth modification of the dispersion unit in the film forming apparatus according to the first embodiment will be described with reference to FIG.
In the ninth modification shown in FIG. 12, the dispersing portion 9B is inclined so as to expand upward. In such a configuration, the surface wave can be dispersed upward along the dispersion part 9B at the branch point between the propagation part 9A and the dispersion part 9B to reduce the reflection of the surface wave.

Next, a film forming apparatus according to the second embodiment will be described with reference to FIGS.
Here, the film forming apparatus according to the second embodiment basically has the same configuration as that of the film forming apparatus 1 according to the first embodiment described above. Therefore, in the following, the structure of the first embodiment will be described. Constituent members and the like that are the same as those of the film apparatus 1 are denoted by the same reference numerals and the description of the film forming apparatus 1 of the first embodiment is referred to, and the description thereof is omitted. Further, the description will be given focusing on the configuration unique to the film forming apparatus according to the second embodiment.

  In FIG. 13 and FIG. 14, each work material 8 is connected from each negative work voltage application electrode 25 between each work material 8 attached to each holding part 9 </ b> C provided in the rectangular dispersion part 9 </ b> B of the holder 9. The ground electrodes 30A, 30B, 30C, and 30D having a voltage higher than the negative voltage applied to are disposed in contact with the workpiece 8 and the dispersion portion 9B. Each of the ground electrodes 30A, 30B, 30C, and 30D is grounded and at a voltage of 0 volt, but the voltage is higher than the voltage applied through the negative voltage application electrode 25. Each ground electrode 30A, 30B, 30C, 30D is not limited to 0 volt voltage as an auxiliary electrode, and a positive voltage from another power source or a negative voltage higher than the negative voltage applied to each workpiece 8 is applied. Also good.

  Specifically, in FIG. 13, a ground electrode 30 </ b> A is disposed on the left side from the left workpiece material 8, and the ground electrode 30 </ b> B is disposed between the left workpiece material 8 and the central workpiece material 8. The ground electrode 30C is disposed between the central workpiece material 8 and the right workpiece material 8, and the ground electrode 30D is disposed at a distance from the right workpiece material 8 on the right side.

  As described above, the ground electrodes 30 </ b> A to 30 </ b> D having a voltage higher than the negative voltage applied to the work material 8 from the negative voltage application electrode 25 are provided between the work materials 8. In addition, by disposing the contact portion 9B in a non-contact manner, a sufficient potential difference due to the negative voltage applied from the negative voltage application electrode 25 is ensured between each workpiece material 8 and the ground electrodes 30A to 30D. It is possible to efficiently generate plasma around the processing material 8 and perform uniform film formation on the plurality of processing materials 8 simultaneously.

Note that the first embodiment and the second embodiment do not limit the present invention, and various improvements and modifications can be made without departing from the gist of the present invention.
In the film forming apparatus 1 according to the first embodiment, the transmission slit 9D and the cutout portion 9G are formed in the dispersion portion 9B of the holder 9, and the surface wave based on the microwave supplied from the microwave supply port 22 is transmitted. Although it is configured so as to be transmitted through the slit 9D and the notch 9G and generate uniform plasma around each workpiece material 8, the present invention is not limited to this. For example, as shown in FIG. It may be configured.

That is, in FIG. 15, the rectangular dispersion part 9B in the holder 9 is not formed with the transmission slit 9D or the notch part 9G, and three holding parts 9C provided upright on the rectangular dispersion part 9B. A workpiece material 8 is attached to each (see FIG. 1).
Also in such a configuration, as shown in FIG. 16, the surface wave based on the microwave emitted from the microwave supply port 22 is propagated upward along the propagation part 9A, and is dispersed as shown by the arrow A. Propagated on the lower surface of the part 9B. Thereby, the surface wave based on the microwave is propagated mainly to the outside of the work material 8 disposed on both sides of the dispersion portion 9B. At this time, since the surface wave is reflected at the upper end of each workpiece material 8 and partly propagates toward the inner lower side of the workpiece material 8, the plasma 28 is generated on the inner side (opposite side) of each workpiece material 8. Although the density is low, plasma 28 is generated to such an extent that there is no problem in film formation on each work material 8.

  Accordingly, even with the configuration shown in FIG. 15, the surface wave based on the microwave propagated through the propagation portion 9A from the microwave supply port 22 is processed by each workpiece held by the plurality of holding portions 9C via the dispersion portion 9B. It can be dispersed in the material 8. Accordingly, high-density plasma can be generated around each workpiece material 8, so that a plurality of microwave supply ports and the like are not provided for each workpiece material 8, and a plurality of workpiece materials 8 are provided. On the other hand, film formation can be performed simultaneously.

  Moreover, in the 4th modification shown in FIG. 7, in the disc-shaped dispersion | distribution part 9B, between the five work materials 8 attached to each holding part 9C (refer FIG. 1), each transmission slit 9D. (A total of four transmission slits 9D) are formed. However, the present invention is not limited to this, and may be configured as shown in FIG.

  That is, in FIG. 17, the work material 8 is attached to each of the holding portions 9 </ b> C (see FIG. 1) formed at four locations of the disc-like dispersion portion 9 </ b> B. Even in such a configuration, the surface wave based on the microwave emitted from the microwave supply port 22 is propagated upward along the propagation part 9A and propagated on the lower surface of the dispersion part 9B. Thereby, the surface wave based on the microwave is propagated to the outside of the work material 8 disposed on both sides of the dispersion portion 9B. At this time, the surface wave is reflected at the upper end of each workpiece material 8 and a part of the surface wave goes inward and downward. In addition, the surface wave that has propagated through the lower surface of the dispersion portion 9B where the workpiece 8 is not disposed travels from the edge of the disk to the upper surface and is further dispersed toward the inside of the workpiece 8. Therefore, although the density of the plasma 28 is reduced on the inner side (opposite side) of each workpiece material 8, the plasma 28 is generated to the extent that there is no problem in film formation on each workpiece material 8.

  Accordingly, even with the configuration shown in FIG. 17, the surface wave based on the microwave propagated through the propagation portion 9A from the microwave supply port 22 is processed by each workpiece held by the plurality of holding portions 9C via the dispersion portion 9B. It can be dispersed in the material 8. Accordingly, high-density plasma can be generated around each workpiece material 8, so that a plurality of microwave supply ports and the like are not provided for each workpiece material 8, and a plurality of workpiece materials 8 are provided. On the other hand, film formation can be performed simultaneously.

  Furthermore, you may comprise the dispersion | distribution part 9B of the holder 9 as shown in FIG. In FIG. 18, the dispersion part 9B is configured by arranging two rectangular dispersion members in an orthogonal state, and each of the five holding parts 9C (see FIG. 1) provided in each dispersion member. A work material 8 is attached.

  Also in the configuration of FIG. 18 described above, similarly to the configuration shown in FIG. 15, the surface wave based on the microwave emitted from the microwave supply port 22 is propagated upward along the propagation portion 9A, and the bottom surface of the dispersion portion 9B. Is propagated. Thereby, the surface wave based on the microwave is propagated mainly to the outside of the work material 8 disposed on both sides of the dispersion portion 9B. At this time, since the surface wave is partially reflected at the upper end of each workpiece material 8 and propagates in the inner direction, the density of plasma 28 is reduced inside each workpiece material 8 (opposite side). Plasma 28 is generated to such an extent that there is no problem in film formation on the processing material 8.

  Accordingly, even in the configuration shown in FIG. 18, the surface wave based on the microwave propagated through the propagation portion 9A from the microwave supply port 22 is processed by each workpiece held by the plurality of holding portions 9C via the dispersion portion 9B. It can be dispersed in the material 8. Accordingly, high-density plasma can be generated around each workpiece material 8, so that a plurality of microwave supply ports and the like are not provided for each workpiece material 8, and a plurality of workpiece materials 8 are provided. On the other hand, film formation can be performed simultaneously.

  Furthermore, in the film forming apparatus 1 according to the second embodiment, the negative voltage application electrode 25 is interposed between the work materials 8 attached to the holding portions 9C provided in the rectangular dispersion portion 9B of the holder 9. The ground electrodes 30A, 30B, 30C, and 30D having a voltage higher than the negative voltage applied to each workpiece material 8 are arranged in non-contact with each workpiece material 8 and the dispersion portion 9B, but are not limited thereto. For example, it may be configured as shown in FIG.

  That is, in FIG. 19, the workpiece material 8 is attached to each of the four holding portions 9C (see FIG. 13) erected on the disk-shaped dispersion portion 9B, and a cross shape is formed between the workpiece materials 8. The ground electrode 30E formed in the above is disposed in a non-contact manner with each workpiece material 8 and the dispersion portion 9B.

  Even in such a configuration, the ground electrode 30E having a voltage higher than the negative voltage applied to the work material 8 from the negative voltage application electrode 25 is distributed between the work materials 8 and the work material 8 between the work materials 8. By arranging in a non-contact manner with the portion 9B, a sufficient potential difference due to the negative voltage applied from the negative voltage application electrode 25 is ensured between the work materials 8 and the surroundings of the work materials 8 are efficient. It is possible to generate uniform plasma on the plurality of workpieces 8 simultaneously by generating plasma.

DESCRIPTION OF SYMBOLS 1 Film-forming apparatus 2 Processing container 5 Gas supply part 6 Control part 8 Work material 9 Holder 9A Propagation part 9B Dispersion part 9C Holding part 9D Transmission slit 9F Transmission hole 9G Notch part 11 Microwave pulse control part 12 Microwave oscillator DESCRIPTION OF SYMBOLS 13 Microwave power supply 15 Negative voltage power supply 16 Negative voltage pulse generation part 17 Isolator 18 Tuner 19 Waveguide 21 Coaxial waveguide 22 Microwave supply port 25 Negative voltage application electrode 30A thru | or 30E Ground electrode

Claims (8)

A gas supply unit for supplying a raw material gas and an inert gas to the processing container;
A microwave supply unit that supplies a microwave for generating plasma along the processing surface of the workpiece to be processed;
A negative voltage application unit that applies a negative bias voltage that expands the sheath layer along the processing surface of the workpiece; and
A microwave supply port for propagating microwaves supplied from the microwave supply unit as surface waves to the expanded sheath layer;
A conductive propagation part disposed so as to protrude with respect to the microwave supply port and propagating the microwave from the microwave supply port as a surface wave;
A plurality of holding portions for holding a plurality of workpieces are provided, and the surface waves that are electrically connected to the propagation portion and the workpiece to be propagated to the propagation portions are distributed to the plurality of workpieces. A film forming apparatus comprising: a dispersing unit that performs the following steps.   The film forming apparatus according to claim 1, wherein the dispersion unit includes a transmission unit that transmits microwaves between the plurality of holding units and the propagation unit. The propagation unit is arranged at the center of the dispersion unit connected to the plurality of holding units, and the plurality of holding units are arranged at end portions of the dispersion unit,
3. The dispersion unit according to claim 1, wherein the dispersion unit has a shape having different widths orthogonal to a longitudinal direction from the propagation unit to the holding unit between the propagation unit and the holding unit. The film-forming apparatus of description.   4. The film forming apparatus according to claim 3, wherein the dispersion unit includes a region having the minimum width between the propagation unit and the holding unit around the propagation unit.   5. The transmission part or the region having the minimum width is provided in line symmetry with a straight line connecting the propagation part and the holding part as an axis of symmetry. Film forming equipment.   3. The transmission unit according to claim 2, wherein the transmission unit is provided in a position from the propagation unit to each of the plurality of holding units at a position where the distance from the propagation unit is equal, with the propagation unit as a center. Deposition device. The base material holding part is arranged at a distance from the propagation part along the direction in which the propagation part protrudes from the microwave supply port,
The film forming apparatus according to claim 1, wherein the dispersion part has a polygonal shape having long sides in a direction from the propagation part toward the base material holding part. An electrode having a voltage higher than the negative voltage applied by the negative voltage application unit is disposed between the plurality of workpieces arranged in the dispersion part in a non-contact manner with the workpiece and the dispersion part. The film forming apparatus according to claim 1, wherein the film forming apparatus is a film forming apparatus.

Images