JP6195709B2 - Probe card, inspection apparatus, and inspection method - Google Patents

Description

  The present invention relates to a probe card, an inspection apparatus, and an inspection method.

  Probe cards are used for inspection of semiconductor devices and the like (Patent Document 1). For example, when a plurality of probes provided on the probe card come into contact with the electrodes (pads) of the semiconductor device, power, signals, etc. from the tester can be supplied to the semiconductor device.

International Publication No. 2007/017956

  In the inspection using such a probe card, the number of tester channels is limited. Therefore, a probe card is created with the number of DUTs (Device Under Test) that can be measured at the same time among the number of channels of the tester. As the number of simultaneous measurements increases, the inspection time can be shortened. For example, when the number of tester channels is 2048 ch and the number of channels per measurement DUT is 16 ch, simultaneous measurement of 128 DUTs (= 2048/16) is possible. However, depending on the layout of the probe card, there is a problem in that the invalid DUT layout increases on the outer peripheral portion of the wafer, and the measurement efficiency deteriorates.

  The present invention has been made in view of the above-described problems, and an object thereof is to provide a probe card, an inspection apparatus, and an inspection method that can be efficiently inspected.

  A probe card according to an aspect of the present invention is a probe card for inspecting a wafer having a plurality of devices, and includes a substrate and a first probe group having a plurality of first probes arranged on the substrate. And a plurality of second probes whose tip positions are closer to the substrate side than the tip position of the first probe, and are arranged so as to sandwich the first probe group in plan view of the substrate And a second group of probes.

  In the probe card, in the second direction orthogonal to the first direction, the second probe group is closer to the substrate in the first direction sandwiching the first probe group. The layout of the two probe groups may be large.

  In the above probe card, even if a difference in height between the tip positions of the first probe and the second probe is larger than an overdrive amount when the first probe inspects the device. Good.

  In the above probe card, the first probe group inspects the device arranged at the center of the wafer, and the second probe group inspects the device arranged at the end of the wafer. May be.

  An inspection apparatus according to an aspect of the present invention includes a control unit that repeatedly performs touchdown by changing a relative position between the probe card, a stage on which a wafer is placed, and the probe card and the stage. And.

  An inspection method according to an aspect of the present invention is an inspection method for inspecting a wafer using the probe card described above, and repeatedly touching down a device at the center of the wafer to the first probe group. And inspecting the device at the edge of the wafer with the second probe group, and inspecting the wafer and the substrate by the inspection with the first probe group and the inspection with the second probe group. The distance is changing.

  As described above, according to the present invention, it is possible to provide a probe card, an inspection apparatus, and an inspection method that can be efficiently inspected.

It is a figure which shows the structure of the inspection apparatus which concerns on this Embodiment. It is a top view which shows typically the layout of the probe concerning this Embodiment. It is a figure which shows a mode that the edge part of a wafer is tested with a probe card. It is a figure which shows a mode that the center of a wafer is tested with a probe card. It is a figure which shows a mode that the edge part of a wafer is tested with a probe card. It is a map which shows the layout shot by a probe typically. It is a top view which shows typically the layout of the probe concerning a comparative example. It is a figure which shows a mode that the edge part of a wafer is tested with the probe card concerning a comparative example. It is a top view which shows typically the layout of the probe concerning a modification. It is a side view for demonstrating the method to manufacture the contactor from which height differs.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings. The following description shows preferred embodiments of the present invention, and the scope of the present invention is not limited to the following embodiments. In the following description, the same reference numerals indicate substantially the same contents.

  The probe card and the inspection apparatus according to the present embodiment are designed to improve efficiency when testing an inspection object such as an IC (Integrated Circuit) chip on a semiconductor wafer. For the purpose of improving the efficiency of measurement, the probe is laid out so as to reduce the number of touchdowns when simultaneously measuring a large number of inspection objects. Therefore, the present invention can be applied to all probe cards and can be applied to all inspection apparatuses in which the probe cards are used. Thus, since the present invention can be applied to various probe cards and inspection apparatuses, the following description will focus on circuit components mounted on the probe card. Further, as an inspection object, an explanation will be given by taking as an example IC chips formed in large numbers on a semiconductor wafer.

  In the following description, the touchdown is not limited to bringing the chuck top 76 up and bringing the wafer device into contact with the probe, but includes touching down the probe card and bringing the device into contact with the probe. That is, the touchdown means that the device and the probe are brought into contact with each other by changing the relative position between the probe substrate and the wafer in the vertical direction.

  FIG. 1 is a diagram illustrating a configuration of a test apparatus (inspection apparatus) in which the probe card according to the present embodiment is used. In the following description, an XYZ orthogonal coordinate system is used. The vertical direction (vertical direction) in FIG. 1 is the Z direction, the horizontal direction is the X direction, and the paper back direction is the Y direction. However, these directions differ depending on the postures of the probe board and the probe card on which a large number of contacts are arranged.

  Therefore, in the state where the probe card is attached to the test apparatus, the vertical direction as used in the present invention is actually the vertical direction, the upside down state, the diagonal direction, etc. You may use it in the state used as a direction.

  Referring to FIG. 1, a test apparatus 10 uses a disk-shaped semiconductor wafer 12 as an object to be inspected, and inspects or tests a plurality of integrated circuits formed on the wafer 12 in a plurality of times. Each integrated circuit has a plurality of electrodes (not shown) such as pad electrodes on the top surface.

  The test apparatus 10 includes a probe card 16, a test head 20, a card holder 22, a card control unit 24, a stage control unit 26, and a tester control unit 28. The probe card 16 is a plate-like electrical connection device and includes a plurality of contacts 14. The test head 20 is electrically connected to the probe card 16. The wafer 12 is placed on the inspection stage 18. The card holder 22 receives the probe card 16 at the outer peripheral edge in order to hold the probe card 16.

  The card control unit 24 controls the height or inclination of the card holder 22 with respect to the inspection stage 18. The stage control unit 26 controls the position of the inspection stage 18 with respect to the card holder 22. The tester control unit 28 transmits the test head 20 to the contactor 14 to exchange test signals (that is, electric signals such as a supply signal supplied to the integrated circuit for the test and a response signal from the integrated circuit for the supply signal). Control.

  In the illustrated example, each contactor 14 uses a plate-like probe having a crank shape. Such a contact 14 is, for example, a known one described in JP-A-2005-201844.

  However, each contact 14 is a probe made from a fine metal wire such as a tungsten wire, a plate-like probe made using a photolithography technique and a deposition technique, or one surface of an electrical insulating sheet such as polyimide. Conventionally known ones such as a probe in which a plurality of wirings are formed and a part of the wirings are used as contacts may be used.

  The probe card 16 includes a reinforcing member 34 having a flat lower surface, a circular flat wiring substrate 36 held on the lower surface of the reinforcing member 34, and a flat electric connector 38 disposed on the lower surface of the wiring substrate 36. The probe board 40 disposed on the lower surface of the electrical connector 38 and the disc-shaped cover 42 disposed on the reinforcing member 34 are included. These members 34 to 42 are firmly assembled so as to be separable by a plurality of bolts.

  The reinforcing member 34 is made of a metal material such as a stainless plate. For example, as described in Japanese Patent Application Laid-Open No. 2008-145238, the reinforcing member 34 includes an inner annular portion, an outer annular portion, a plurality of connecting portions that connect both annular portions, and an outer annular portion. A plurality of extending portions extending radially outward from the inner annular portion, and a central frame portion that continues integrally inside the inner annular portion, and a shape that acts as a space that opens between these portions in both the upper and lower directions can do.

  Further, for example, as described in Japanese Patent Application Laid-Open No. 2008-145238, an annular thermal deformation suppressing member that suppresses thermal deformation of the reinforcing member 34 is disposed on the upper side of the reinforcing member 34, and the thermal deformation suppressing member The cover 42 may be disposed on the top.

  In the illustrated example, the wiring board 36 is manufactured in a disk shape from an electrically insulating resin such as an epoxy resin with glass, and a plurality of conductive paths, that is, internal wirings (not used) for passing test signals to the contacts 14. (Shown).

  A large number of connectors 44 connected to the test head 20 are arranged on the annular peripheral edge of the upper surface of the wiring board 36. Each connector 44 has a plurality of terminals (not shown) electrically connected to the internal wiring.

  The reinforcing member 34 and the wiring board 36 are coaxially coupled by a plurality of screw members (not shown) in a state where the lower surface of the reinforcing member 34 and the upper surface of the wiring board 36 are in contact with each other.

  The electrical connector 38 is a well-known thing described in Unexamined-Japanese-Patent No. 2008-145238, for example. The electrical connector 38 includes a plurality of known connection pins 50 such as pogo pins extending vertically through an electrically insulating pin holder, and the internal wiring of the wiring board 36 is connected to the probe board 40 by the connection pins 50, respectively. Are electrically connected to a conductive path described later.

  The electrical connector 38 is coupled to the lower surface of the wiring board 36 at the pin holder by a plurality of screw members and appropriate members (none of which are shown) with the upper surface of the pin holder in contact with the lower surface of the wiring board 36. ing.

  Further, the upper and lower ends of each connection pin 50 are separated by a spring, and the upper end is pressed by a terminal portion (not shown) following the lower end portion of the internal wiring of the wiring board 36, and the lower end Is pressed by another terminal portion provided on the upper surface of the probe substrate 40.

  In the illustrated example, the probe substrate 40 is a combined substrate in which a flexible multilayer sheet 54 formed of an electrically insulating resin such as a polyimide resin is provided on the lower surface of the multilayer ceramic substrate 56. The contact 14 is arranged in a cantilever manner.

  The multilayer sheet 54 has a shape and a structure having a plurality of internal wirings (not shown) inside and a plurality of probe lands (not shown) electrically connected to the internal wirings on the lower surface. Further, it is formed integrally with the ceramic substrate 56. The ceramic substrate 56 is formed with through wiring that penetrates vertically.

  Each contactor 14 has a cantilever shape on the above-described probe land by a technique such as bonding with a conductive bonding material such as solder, welding with a laser, or the like with its tip (needle tip) protruding downward. It is attached to.

  The card holder 22 is made of an electrically insulating material, and has a ring-shaped peripheral portion 22a and an upward step portion 22b extending inward from the lower end portion of the peripheral portion 22a like an inward flange. ing. The step portion 22 b has a ring shape like an inward flange and receives the lower side of the outer peripheral edge portion of the wiring board 36.

  The probe card 16 includes the extension 34d of the reinforcing member 34 and the wiring board so that the outer peripheral edge of the wiring board 36 is received by the step 22b and the probe card 16 is positioned below the casing of the test head 20. The outer peripheral edge 36 is attached to the step 22b of the card holder 22 by a plurality of screw members (not shown).

  The card holder 22 is attached to the frame or casing of the test apparatus 10 via a card support mechanism (not shown) that changes the inclination of the card holder 22 with respect to the inspection stage 18.

  The above-described card support mechanism is controlled by the card control unit 24 prior to the test, in particular, prior to the test for one lot or the test for one wafer 12, and the card holder 22 for the inspection stage 18 and thus the height of the probe card 16 are controlled. Change the height or inclination. As a result, the probe card 16 is positioned such that the virtual needle tip surface formed by the needle tip of the contactor 14 is positioned at a predetermined height with respect to the wafer 12 received by the chuck top 76.

  The card support mechanism as described above is described in, for example, Japanese Patent Laid-Open Nos. 2002-14047 and 2007-183194.

  The inspection stage 18 is a stage that vacuum-sucks the wafer 12 in a releasable manner, that is, the chuck top 76 and the chuck top 76 are moved three-dimensionally in the front-rear direction, the left-right direction, and the vertical direction with respect to the probe card 16. And a chuck top moving mechanism 78 that rotationally moves around the θ axis extending in the vertical direction.

  The inspection stage 18 is moved in the front-rear and left-right directions with respect to the probe card 16 by a stage moving mechanism (not shown). As a result, the inspection stage 18 is prevented from moving back and forth and left and right while the wafer 12 is being tested. It is moved left and right.

  In addition, during the test of one lot of wafers 12, the inspection stage 18 uses the stage moving mechanism described above to move back and forth and right and left in order to replace the wafer 12 to be tested every time the test of one wafer 12 is completed. Moved in the direction of. However, the wafer 12 to be tested may be exchanged without moving the inspection stage 1 in the front-rear and left-right directions during the test of the wafers 12 for one lot.

  Instead of providing the stage moving mechanism as described above, a function of moving the chuck top 76 in the chuck top moving mechanism 78 in the front-rear direction and the left-right direction may be used.

  Prior to the test of the wafer 12, the chuck top moving mechanism 78 is controlled by the stage control unit 26 to move the inspection stage 18 in a three-dimensional manner and rotationally move around the θ axis. Thereby, the wafer 12 received by the chuck top 76 is positioned so that the electrode of the integrated circuit provided on the wafer 12 faces the needle tip of the contact 14.

  When exchanging the wafer 12 to be tested, the inspection stage 18 moves the chuck top 76 to a position where the wafer 12 does not contact the contact 14 before being moved in the front-rear and left-right directions by the stage moving mechanism. The mechanism 78 is kept lowered.

  The test head 20 is a known one having a plurality of circuit boards in which a plurality of completed integrated circuits are arranged on a support board such as a wiring board, and a box for housing these circuit boards. Is arranged.

  In the illustrated example, the integrated circuit of each circuit board is electrically connected to the internal wiring (not shown) of the wiring board 36 via the wiring 80 and the connector 44. Thus, the integrated circuit on each circuit board is controlled by the tester control unit 28 during the actual test, and passes the test signal to the integrated circuit on the wafer 12 via the probe card 16.

  The tester control unit 28 has a predetermined number of channels. That is, the tester control unit 28 inputs and outputs test signals and power sources (hereinafter, signals and the like) for a plurality of channels. For example, the tester control unit 28 has 2016 ch. Further, an inspection is performed with a predetermined number of channels per device provided on the wafer 12. For example, an inspection is performed with 16 channels per DUT. In this case, simultaneous measurement of 126 DUT is possible. That is, 126 devices can be electrically tested with one touch-down (one shot) of the probe card. Then, the touchdown is repeatedly performed until the test on all the devices on the wafer is completed. The probe card 16 repeatedly touches down to inspect the wafer 12 having a plurality of devices.

  Next, the layout of the contact 14 in the probe card 16 will be described with reference to FIG. FIG. 2 is a diagram schematically showing a probe layout in the probe card 16. 2A is an XY plan view showing the probe layout in the probe card 16, and FIG. 2B is a side view for explaining the probe layout in the probe card 16. As shown in FIG. Note that one grid in FIG. 2A corresponds to one device 125 of the wafer 12.

  As shown in FIG. 2B, the probe substrate 40 is provided with a first probe group 141 and second probe groups 142a and 142b. Each of the first probe group 141 and the second probe groups 142 a and 142 b has a plurality of contacts 14. Here, the contact 14 of the first probe group 141 is shown as a contact 14a, and the contact 14 of the second probe group 142a, 142b is shown as a contact 14b. The contacts 14 a and 14 b protrude downward from the probe substrate 40. The contact 14b is shorter than the contact 14a. That is, the tip of the contact 14a is disposed above the tip of the contact 14b. In other words, the tip position of the contact 14a in the Z direction is arranged closer to the probe substrate 40 than the tip position of the contact 14b.

  In the X direction, second probe groups 142a and 142b are arranged on both sides of the first probe group 141. That is, the first probe group 141 is disposed between the second probe group 142a and the second probe group 142b. 2B, the second probe group 142a is arranged on the left side of the first probe group 141, and the second probe group 142b is arranged on the right side of the first probe group 141. The second probe groups 142a and 142b are arranged apart from each other in the X direction so as to sandwich the first probe group 141. Therefore, the contact 14 a is arranged at the center of the probe substrate 40, and the contact 14 b is arranged at the end of the probe substrate 40.

  The contacts 14a of the first probe group 141 are arranged as shown in the probe layout 121 of FIG. The contacts 14b of the second probe group 142a are arranged as shown in the probe layout 122a of FIG. The contacts 14b of the second probe group 142b are arranged as shown in the probe layout 122b of FIG. In the probe layouts 121, 122 a, and 122 b, one square corresponds to one device 125 on the wafer 12. Therefore, the probe layout 121 shows a device 125 that can be simultaneously measured by the first probe group 141. The probe layout 122a shows the device 125 that can be measured simultaneously by the second probe group 142a, and the probe layout 122b shows the device 125 that can be measured simultaneously by the second probe group 142b.

  The probe layout 121 of the first probe group 141 is rectangular. For example, the contacts 14a of the first probe group 141 test the devices 125 arranged in a 7 × 16 matrix. The probe layouts 122 a and 122 b of the second probe groups 142 a and 142 b are different from the probe layout 121 of the first probe group 141. That is, the probe layouts 122a and 122b are not rectangular. The probe layout 122a is symmetrical to the probe layout 122b with respect to the center line of the probe layout 121 shown by the dotted line in FIG. The center line is a straight line in the Y direction passing through the center of the probe layout 121 in the X direction.

  The first probe group 141 has a number of contacts 14a corresponding to the number of devices that can be tested with one touchdown. For example, if the tester control unit 28 is 2016 ch, 126 (= 7 × 18) devices 125 can be simultaneously measured with 16 ch for one device 125. That is, the contact 14a of the first probe group 141 performs simultaneous measurement of 126 DUTs with 16 channels per DUT.

  Similarly, each of the second probe groups 142a and 142b has the number of contacts 14b corresponding to the number of devices that can be tested by one touchdown. In one touchdown, one of the first probe group 141, the second probe group 142a, or the second probe group 142b performs measurement. Here, the number of DUTs that can be simultaneously measured by the contacts 14b of the second probe groups 142a and 142b is smaller than the number of DUTs that can be simultaneously measured by the first probe group 141. That is, the number of contacts 14b of the second probe groups 142a and 142b is smaller than the number of contacts 14a of the first probe group 141. Of course, the number of DUTs that can be simultaneously measured by the contacts 14b of the second probe groups 142a and 142b may be the same as the number of DUTs that can be simultaneously measured by the first probe group 141.

  The probe layouts 122a and 122b will be described. In the Y direction, the probe layouts 122 a and 122 b of the second probe groups 142 a and 142 b are larger than the probe layout 121 of the first probe group 141. The probe layouts 122a and 122b in the Y direction become larger as going outward in the X direction. That is, the probe layouts 122a and 122b in the Y direction are expanded toward the outside of the probe substrate 40.

  For example, in the probe layout 121, the number of devices in one column in the Y direction is 16. On the other hand, in the probe layouts 122a and 122b, the number of devices in one row is 22 on the outermost side in the X direction. The number of devices in one row is 16 on the innermost side in the X direction, that is, on the first probe group 141 side. The contacts 14b of the second probe groups 142a and 142b are laid out so that the number of devices in one row increases toward the outside in the X direction. Here, in the second probe groups 142a and 142b, the number of devices in the innermost row is the same as the number of devices in one row of the first probe group 141.

  Then, the first probe group 141 tests the device 125 at the center of the wafer 12. That is, the contact 14 a of the first probe group 141 is in contact with the pad of the device 125 at the center of the wafer 12. A second probe group 142a, 142b tests the device 125 at the end of the wafer 12. That is, the contact 14b of the second probe group 142a, 142 contacts the pad of the device 125 at the end of the wafer 12.

  The state of the electrical test of the wafer 12 is shown in FIGS. 3 and 5 show a state in which the device at the end portion of the wafer 12 is electrically tested, and FIG. 4 shows a state in which the device 125 in the center portion of the wafer 12 is electrically tested.

  As shown in FIG. 4, when an electrical test is performed on the device 125 at the center of the wafer 12, the chuck top moving mechanism 78 moves the chuck top 76 so that the DUT is directly below the first probe group 141. Then, the chuck top moving mechanism 78 raises the chuck top 76. That is, the probe card 16 is moved relative to the wafer 12 so that the wafer 12 and the probe substrate 40 are close to each other. Thereby, the tip of the contact 14a comes into contact with the pad of the device 125. And the tester control part 28 can test | inspect the device 125 of a center part by inputting / outputting a signal etc. via the contactor 14a.

  When the device 125 at the end of the wafer 12 is electrically tested, the chuck top moving mechanism 78 moves the chuck top 76 so that the DUT is directly below the second probe group 142a or the second probe group 142b. Then, the chuck top moving mechanism 78 raises the chuck top 76. That is, the probe card 16 is moved relative to the wafer 12 so that the wafer 12 and the probe substrate 40 are close to each other. Thereby, the tip of the contact 14a comes into contact with the pad of the device 125. And the tester control part 28 can test | inspect the device 125 of an edge part by inputting / outputting a signal etc. via the contactor 14a.

  Specifically, when the device 125 at the end of the wafer 12 on the −X side is subjected to an electrical test, a DUT is disposed immediately below the second probe group 142b as shown in FIG. That is, in the X direction, the chuck top moving mechanism 78 moves the chuck top 76 so that the −X side edge of the wafer 12 is between the first probe group 141 and the second probe group 142b. And an electrical test is performed by performing a touchdown in this state. On the other hand, when the device 125 at the + X side end of the wafer 12 is subjected to an electrical test, a DUT is disposed immediately below the second probe group 142a as shown in FIG. That is, in the X direction, the chuck top moving mechanism 78 moves the chuck top 76 so that the + X side edge of the wafer 12 is between the first probe group 141 and the second probe group 142a. And an electrical test is performed by performing a touchdown in this state. For example, the chuck top moving mechanism 78 moves the wafer 12 in the horizontal direction from the state shown in FIG. 3 to the state shown in FIG.

  The tip position of the contact 14a is lower than the tip position of the contact 14b. Therefore, even if the contact 14a is brought into contact with the wafer 12 in order to test the device 125 at the center of the wafer 12, the contact 14b does not come into contact with the wafer 12 (see FIG. 4). That is, even when the contact 14 a is in contact with the wafer 12, a clearance is generated between the contact 14 b and the wafer 12.

  The height difference between the tip position of the contact 14a and the tip position of the contact 14b may be designed in consideration of the amount of overdrive (OD). For example, the difference in height between the contact 14a and the contact 14b is set to about twice the OD amount. Specifically, when the OD amount is 100 μm, the tip position of the contact 14b is set to about 200 μm above the tip position of the contact 14a. Thereby, it is possible to prevent the contact 14b from coming into contact with the wafer 12 during the test of the device 125 at the center of the wafer 12.

  When the device 125 at the end of the wafer 12 is subjected to an electrical test, the chuck top moving mechanism 78 raises the chuck top 76 until the contact 14b comes into contact with the wafer 12 and reaches a predetermined overdrive amount. At this time, as shown in FIGS. 3 and 5, the first probe group 141 is outside the wafer 12 in the XY plane, so that the contact 14 a does not contact the wafer 12. That is, even if the contact 14 b having a high tip position is moved to a position where it comes into contact with the wafer 12, the contact 14 a does not contact the wafer 12. In other words, when testing with the second probe group 142a, the first probe group 141 and the second probe group 142b are arranged so as to be outside the wafer 12 in the XY plane, and touched down. Similarly, when testing with the second probe group 142b, the first probe group 141 and the second probe group 142a are arranged outside the wafer 12 in the XY plane. By doing so, only the contact 14 corresponding to the DUT comes into contact with the wafer 12 in each electrical test.

  By providing the probe card 16 with the second probe groups 142a and 142b as described above, the number of measurements can be reduced. That is, the number of touchdowns of the probe card 16 can be reduced, and the measurement time can be shortened. The reason for this will be described with reference to FIG. FIG. 6 is a layout shot map and is a plan view schematically showing the device 125 of the wafer 12.

  The circular wafer 12 is provided with a plurality of devices 125 such as IC (Integrated Circuit) chips. In FIG. 6, a small square white frame is the device 125, and a rectangular thick frame is a layout to be tested with a single touchdown. Here, the layout tested by the first probe group 141 is a layout 131, the layout tested by the second probe group 142a is a layout 132a, and the layout tested by the second probe group 142b is a layout 132b. To do. The layout 131 has a rectangular shape like the probe layout 121 of FIGS. The layout 132a spreads in the Y direction toward the −X side, like the probe layout 122a in FIGS. The layout 132b spreads in the Y direction toward the + X side, like the probe layout 122b in FIGS.

  In the central portion of the wafer 12, eight measurements are performed by the first probe group 141. That is, the touchdown is repeated by shifting the position in the X direction and the Y direction. On the other hand, at the end of the wafer 12, one measurement is performed by each of the second probe groups 142a and 142b. The device 125 near the + X side end of the wafer 12 is tested by the second probe group 142a, and the device 125 near the −X side end of the wafer 12 is tested by the second probe group 142b. Accordingly, all of the devices 125 at the + X side end of the wafer 12 are included in the layout 132a, and all of the devices 125 at the −X side end of the wafer 12 are included in the layout 132b. All the devices 125 of the wafer 12 are included in eight layouts 132a, one layout 131a, and one layout 131b. Therefore, all the devices 125 can be tested with 10 shots (touchdowns).

  On the other hand, comparative examples in the case where the second probe groups 142a and 142b are not provided are shown in FIGS. In the comparative example, as shown in FIG. 7, only the first probe group 141 is provided. That is, the tip positions of all the contacts 14a are the same height. In this case, if the device 125 at the end of the wafer 12 is to be tested, the number of devices that can be measured simultaneously is limited. As shown in FIG. 8, it is necessary to change the position in the Y direction and touch down at the edge of the wafer 12, and the number of shots increases. Here, 12 shots are required to electrically test all the devices 125.

  In contrast, the probe card according to the present embodiment includes the second probe groups 142a and 142b as shown in FIGS. The probe layouts 122a and 122b of the second probe groups 142a and 142b are larger in the Y direction than the probe layout 121 of the first probe group 141. Therefore, as shown in FIG. 6, it is not necessary to change the position in the Y direction and touch down at both ends in the X direction. In other words, the second probe group 142a tests the device 125 at the right end of the wafer 12 with a single touchdown. The second probe group 142b tests the leftmost device 125 with a single touchdown. Thereby, the number of shots can be reduced, and the test time can be shortened. Inspection can be performed efficiently and productivity can be improved. In this example, since the number of shots can be reduced from 12 to 10, the measurement efficiency can be improved by a factor of 1.2.

  The order in which the test using the first probe group 141 and the test using the second probe groups 142a and 142b are performed is not particularly limited. That is, the test using the first probe group 141 may be performed before or after the test using the second probe groups 142a and 142b. Furthermore, the test using the first probe group 141 may be performed between the test using the second probe group 142a and the test using the second probe group 142b.

  In the probe card 16, the first probe group 141 may be electrically connected in parallel with the second probe groups 142a and 142b. That is, the contact 14a and the contact 14b are connected by the wiring in the probe card 16, and signals and the like are supplied in parallel. By doing so, a common signal or the like can be input / output to / from each of the first probe group 141, the second probe group 142a, and the second probe group 142b. That is, regardless of which of the first probe group 141, the second probe group 142a, and the second probe group 142b is in contact with the device 125, each device 125 can be tested with the same signal or the like.

  Further, the heights of the contact 14a and the contact 14b are different. Thereby, it can prevent that the wafer 12 and the contactor 14 contact in places other than DUT. Therefore, it is possible to prevent the contact 14 from contacting one device 12 a plurality of times. Damage to the device 125 and the contact 14 can be prevented. Further, in the probe group other than the probe group corresponding to the DUT, since the contact 14 is not in contact with the wafer 12, even when a signal or the like is supplied in parallel, the DUT can be reliably tested.

  Note that the contact 14a and the contact 14b may not be connected in parallel. That is, a wiring for supplying a signal or the like to the contact 14a and the contact 14b may be provided independently. In this case, supply of signals and the like can be controlled by a switch such as a relay. The tester control unit 28 outputs a control signal for switching the relay.

Different OD amounts may be set for the test using the first probe group 141 and the test using the second probe groups 142a and 142b. In the test using the first probe group 141 and the test using the second probe groups 142a and 142b, optimal index amounts, OD drive amounts, and the like are set, respectively. When the test using the first probe group 141 is performed, the probe card 16 or the wafer 12 is moved to an XY position corresponding to the first index amount. Then, the chuck top 76 is raised to the first height, and the contact 14 a is brought into contact with the device 125. Furthermore, an electrical test is performed with the chuck top 76 raised by the first OD amount.
Similarly, when performing a test using the second probe groups 142a and 142b, the probe card 16 or the wafer 12 is moved to the XY position corresponding to the second index amount. Then, the chuck top 76 is raised to the second height, and the contact 14 b is brought into contact with the device 125. Further, an electrical test is performed with the probe card 16 pushed in only for the second OD amount. That is, the distance between the probe substrate 40 and the wafer 12 is changed between the test using the first probe group 141 and the test using the second probe groups 142a and 142b. Further, the contactor 14 is overdriven by an individually set OD amount. By doing in this way, it can test reliably. The OD amount may be the same between the test using the first probe group 141 and the test using the second probe groups 142a and 142b.

(Modification)
Next, a modified example of the probe layout will be described with reference to FIG. FIG. 9 is a plan view showing a modification of the probe layout. In the modification shown in FIG. 9, a probe layout 122c and a probe layout 122d are added to the probe layouts of FIGS. That is, a probe layout 121 by the first probe group 141 is provided in the center of the probe card 16. In addition, probe layouts 122a to 122d by the second probe group are arranged around the periphery.

  A probe layout 122c is arranged on the + Y side of the rectangular probe layout 121, and a probe layout 122d is arranged on the -Y side. That is, the probe layout 122c and the probe layout 122d are spaced apart from each other in the Y direction so as to sandwich the probe layout 121. The size in the X direction of the probe layout 122c and the probe layout 122d increases toward the outside in the Y direction.

  The second probe group corresponding to the probe layout 122 c tests the device 125 at the −Y side end of the wafer 12, and the second probe group corresponding to the probe layout 122 d is the + Y side end of the wafer 12. The device 125 is tested. With such a configuration, the number of shots can be further reduced.

  Next, a method for manufacturing the contact 14a and the contact 14b will be described with reference to FIG. FIG. 10 is a cross-sectional view for explaining a method of manufacturing the contact 14a and the contact 14b. For example, the contact 14a and the contact 14b are manufactured by laminating a plating layer and a sacrificial layer. Here, a configuration in which only 13 layers (L1 to L13) of the plating layer 422 and the sacrifice layer 421 are stacked on the substrate 420 is illustrated. That is, the plating layer 422 and the sacrificial layer 421 are stacked and formed on the substrate 420 in the order of L1 to L13. Then, by removing the sacrificial layer 421, the contacts 14a and 14b are formed.

  The contacts 14a and 14b are cantilever probes. The contact 14 a includes a distal end portion 411, an arm portion 412, and a base portion 413. The contact 14 b includes a distal end portion 401, an arm portion 402, and a base portion 403. The tip portions 401 and 411 are in contact with the pads of the device 125. The base portions 403 and 413 are fixed to the land of the probe substrate 40. The arm portions 402 and 412 connected to the distal end portions 401 and 411 and the base portions 403 and 413 have two parallel leaf spring structures. The arm portions 402 and 412 are deformed by overdrive.

  Here, the tip portion 401 and the tip portion 411 are formed to have different heights. Therefore, the thickness of the base portion 413 is thicker than that of the base portion 403. Here, the base 413 can be formed by L13 to L8, and the base 403 can be formed by L13 to L10. By doing so, the height of the contact 14a and the contact 14b can be changed. For example, when the difference in height between the tip positions of the contact 14a and the contact 14b is 200 μm, each layer can have a thickness of 100 μm.

  Further, the clearance of the arm portion 402 can be ensured by the thickness of the base portion 403. That is, even if the contact 14b is deformed by a predetermined OD amount, the clearance can be secured. Therefore, damage to the contact 14b due to overdrive can be prevented. Further, the configuration from the arm portion 402 to the tip portion 401 can be the same as the configuration from the arm portion 412 to the tip portion 401.

  Thus, when forming two contactors 14a and 14b with different heights, it is necessary to add two layers of L12 and L13. The increase in the manufacturing cost of the probe card due to the addition of two layers is only a few percent. Therefore, productivity can be improved by testing using the probe card 16 according to the present embodiment.

DESCRIPTION OF SYMBOLS 10 Test apparatus 12 Wafer 14 Contact 16 Probe card 40 Probe board 76 Chuck top 121 Probe layout 122a-122d Probe layout 125 Device 131 Layout 132a, 132b Layout 141 1st probe group 142a 2nd probe group 142b 2nd probe Group 401, 411 Tip portion 402, 412 Arm portion 403, 413 Base portion 421 Sacrificial layer 422 Plating layer

Claims (5)

A probe card for inspecting a wafer having a plurality of devices,
A substrate,
A first probe group having a plurality of first probes arranged on the substrate;
The first probe has a plurality of second probes whose tip positions are on the substrate side than the tip position of the first probes, and are arranged so as to sandwich the first probe group in plan view of the substrate. A second probe group;
The layout of the second probe group in the second direction orthogonal to the first direction is closer to the end of the substrate in the first direction sandwiching the first probe group. Is getting bigger,
The probe card, wherein a difference in height between the tip positions of the first probe and the second probe is larger than an overdrive amount when the first probe inspects the device. Inspecting the device in which the first probe group is arranged at the center of the wafer;
The probe card according to claim 1, wherein the second probe group inspects a device disposed at an end of the wafer. Inspecting the device arranged at the left end of the wafer with the second probe arranged on the right side of the first probe group,
The probe card according to claim 2, wherein a device arranged at a right end portion of the wafer is inspected by a second probe arranged on the left side of the first probe group. The probe card according to any one of claims 1 to 3,
A stage on which the wafer is placed;
An inspection apparatus comprising: a control unit that repeatedly touches down by changing a relative position between the probe card and the stage. An inspection method for inspecting a wafer using the probe card according to claim 1,
By repeatedly touching down, the device at the center of the wafer is inspected with the first probe group, the device at the edge of the wafer is inspected with the second probe group,
An inspection method in which the distance between the wafer and the substrate is changed between the inspection with the first probe group and the inspection with the second probe group.

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