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JP6208980B2 - Semiconductor module and manufacturing method thereof - Google Patents
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JP6208980B2 - Semiconductor module and manufacturing method thereof - Google Patents

Semiconductor module and manufacturing method thereof Download PDF

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JP6208980B2
JP6208980B2 JP2013105915A JP2013105915A JP6208980B2 JP 6208980 B2 JP6208980 B2 JP 6208980B2 JP 2013105915 A JP2013105915 A JP 2013105915A JP 2013105915 A JP2013105915 A JP 2013105915A JP 6208980 B2 JP6208980 B2 JP 6208980B2
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case
semiconductor module
side wall
communication
ceramic substrate
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JP2014229649A (en
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佐藤 豊
豊 佐藤
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Marelli Corp
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Calsonic Kansei Corp
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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/734Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked insulating package substrate, interposer or RDL

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  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Description

本発明は、ケース内に配置した半導体素子を樹脂でポッティングして封止した半導体モジュール及びその製造方法に関する。   The present invention relates to a semiconductor module in which a semiconductor element placed in a case is potted with a resin and sealed, and a method for manufacturing the same.

従来、放熱用のベース基板上に、半導体素子を搭載した金属層を有するセラミックス基板を配置し、ケース側壁で囲んだ内側のセラミックス基板及び半導体素子をエポキシ樹脂でポッティングして封止した半導体モジュールが知られている(下記特許文献1参照)。   Conventionally, there has been a semiconductor module in which a ceramic substrate having a metal layer on which a semiconductor element is mounted is disposed on a base board for heat dissipation, and the inner ceramic substrate and the semiconductor element surrounded by a case side wall are potted and sealed with epoxy resin. It is known (see Patent Document 1 below).

特開2006−179732号公報JP 2006-179732 A

ところで、上記ポッティング用の樹脂は粘度が比較的高く、このためケース内の下部に、樹脂によって空気が閉じ込められた状態となる気泡が発生しやすく、改善が望まれている。   By the way, the above-mentioned potting resin has a relatively high viscosity. Therefore, bubbles are easily generated in the lower part of the case in a state where air is trapped by the resin, and improvement is desired.

そこで、本発明は、半導体素子を樹脂でポッティングする際に気泡の発生を抑制することを目的としている。   Accordingly, an object of the present invention is to suppress the generation of bubbles when potting a semiconductor element with a resin.

本発明は、セラミックス基板の上下両側に金属層を備え、上部の前記金属層の上に半導体素子が実装された半導体モジュール本体を、ケース内に配置し、前記半導体モジュール本体を樹脂でポッティングして封止する構造の半導体モジュールであって、前記セラミックス基板は、周縁が前記金属層から突出する保持部を備え、前記ケースの側壁は、上下方向に延びる通気孔を複数備え、前記側壁の下部に、前記通気孔の下部と前記ケース内の底部とを連通する連通部が設けられ、前記連通部は、前記保持部に近接する位置に形成され、前記連通部は、前記複数の通気孔の下部相互を連通し、前記ケース内の底部に開口して前記側壁の全周にわたり連続して形成されていることを特徴とする。 The present invention provides a semiconductor module body having a metal layer on both upper and lower sides of a ceramic substrate, and a semiconductor element mounted on the upper metal layer in a case, and potting the semiconductor module body with a resin. a semiconductor module structure for sealing, the ceramic substrate is provided with a holding portion which periphery is projected from the metal layer, the side wall of the case includes a plurality of vent holes extending in the vertical direction, the lower portion of the side wall A communicating portion that communicates a lower portion of the vent hole and a bottom portion in the case is provided, the communicating portion is formed at a position close to the holding portion, and the communicating portion is a lower portion of the plurality of vent holes. It communicates with each other, is open at the bottom of the case, and is continuously formed over the entire circumference of the side wall .

本発明によれば、半導体素子を樹脂でポッティングする際に、注入する樹脂によって下部に押し込められる空気は、通気孔を通して外部に放出されるので、樹脂で閉じ込められた状態の気泡の発生を抑制することができる。   According to the present invention, when the semiconductor element is potted with resin, the air pushed into the lower part by the injected resin is released to the outside through the vent hole, so that the generation of bubbles confined by the resin is suppressed. be able to.

図1は、本発明の一実施形態に係わるパワー半導体モジュールの断面図である。FIG. 1 is a cross-sectional view of a power semiconductor module according to an embodiment of the present invention. 図2は、図1のパワー半導体モジュールにおけるケースの側壁の一部を示す平面図である。FIG. 2 is a plan view showing a part of the side wall of the case in the power semiconductor module of FIG. 図3は図2のC−C断面図である。3 is a cross-sectional view taken along the line CC of FIG. 図4は、より具体化したケースの形状を示す、図2に対応する平面図である。FIG. 4 is a plan view corresponding to FIG. 2, showing a more specific shape of the case. 図5は図4のD−D断面図である。5 is a cross-sectional view taken along the line DD of FIG. 図6は図4のE−E断面図である。6 is a cross-sectional view taken along line EE in FIG. 図7(a)は図4のF−F断面図、図7(b)は図7(a)の変形例を示す断面図である。7A is a cross-sectional view taken along line FF in FIG. 4, and FIG. 7B is a cross-sectional view illustrating a modification of FIG. 7A. 図8は、図1のパワー半導体モジュールにおけるケース内の領域にエポキシ樹脂をポッティングした状態を示す断面図である。FIG. 8 is a cross-sectional view showing a state where an epoxy resin is potted in a region in the case of the power semiconductor module of FIG. 図9は図1に対する比較例を示す断面図である。FIG. 9 is a cross-sectional view showing a comparative example with respect to FIG.

以下、本発明の実施の形態を図面に基づき説明する。   Hereinafter, embodiments of the present invention will be described with reference to the drawings.

図1は、本発明の一実施形態に係わる半導体モジュールとしてのパワー半導体モジュール1の断面図で、このパワー半導体モジュール1は、アルミニウム合金などの金属で構成される放熱用のベース板3を備え、ベース板3内には冷却水が流れる冷却水通路3aを設けている。ベース板3は、平面視で矩形状であり、そのベース板3の外周側上面には、周壁5が設けられ、これらベース板3及び周壁5はケース7を構成している。   FIG. 1 is a cross-sectional view of a power semiconductor module 1 as a semiconductor module according to an embodiment of the present invention. The power semiconductor module 1 includes a base plate 3 for heat dissipation composed of a metal such as an aluminum alloy. A cooling water passage 3 a through which cooling water flows is provided in the base plate 3. The base plate 3 has a rectangular shape in plan view, and a peripheral wall 5 is provided on the outer peripheral side upper surface of the base plate 3, and the base plate 3 and the peripheral wall 5 constitute a case 7.

ベース板3上の周壁5で囲まれた内側の領域9には、セラミックス基板11の上下両側に、銅などからなる金属層13,15を設けた複合基板である台座17を、絶縁層19を介して配置している。そして、上部の金属層13上にはハンダ21を介してパワー半導体素子23を実装している。上記した台座17やその上部のパワー半導体素子23を含めて半導体モジュール本体25を構成している。   In the inner region 9 surrounded by the peripheral wall 5 on the base plate 3, a base 17, which is a composite substrate provided with metal layers 13 and 15 made of copper or the like on both upper and lower sides of the ceramic substrate 11, an insulating layer 19 is provided. Is arranged through. A power semiconductor element 23 is mounted on the upper metal layer 13 via solder 21. A semiconductor module main body 25 is configured including the pedestal 17 and the power semiconductor element 23 above the pedestal 17.

図2は、ケース7の周壁5の一部を示す平面図で、ケース7の全体の形状は図2中で上下方向に長い長方形状であり、その長手方向(図2中で上下方向)に沿って3相(U相、V相、W相)分の前記した領域9が形成される。なお、図2では、該領域9内に配置する半導体モジュール本体25を省略している。   FIG. 2 is a plan view showing a part of the peripheral wall 5 of the case 7, and the entire shape of the case 7 is a rectangular shape that is long in the vertical direction in FIG. 2, and in its longitudinal direction (vertical direction in FIG. 2). The above-described region 9 corresponding to three phases (U phase, V phase, and W phase) is formed along. In FIG. 2, the semiconductor module main body 25 disposed in the region 9 is omitted.

ケース7の周壁5は、図2中で上下方向に長い長方形状における左右一対の長辺部27と、図2中で上下両側に位置する一対の短辺部29(図2中で下部側は省略されている)と、を備えている。また、3相(U相、V相、W相)分の各領域9は、短辺部29と平行な隔壁部31によって仕切られている。上記した周壁5(長辺部27、短辺部29)及び隔壁部31は、ケース7の側壁を構成している。   The peripheral wall 5 of the case 7 includes a pair of left and right long side portions 27 in a rectangular shape that is long in the vertical direction in FIG. 2 and a pair of short side portions 29 located on both the upper and lower sides in FIG. Are omitted). Further, each region 9 for three phases (U phase, V phase, W phase) is partitioned by a partition wall portion 31 parallel to the short side portion 29. The peripheral wall 5 (long side portion 27, short side portion 29) and partition wall portion 31 described above constitute the side wall of the case 7.

図2中で右側の一方の長辺部27の上面には、図示しない外部バスバーと接続する電源用端子33,35がU、V、Wの各相毎に設けられている。図2中で左側の他方の長辺部27の上面には、図示しない他の外部バスバーと接続するU、V、W端子37が各相毎にそれぞれ設けられている。これらの各端子33,35,37に電気的に接続する図示しないインサートナットが長辺部27内に埋設されている。このインサートナットと台座17側との電気的な接続構造は省略している。   On the upper surface of one long side 27 on the right side in FIG. 2, power supply terminals 33 and 35 connected to an external bus bar (not shown) are provided for each of U, V, and W phases. 2, U, V, and W terminals 37 connected to other external bus bars (not shown) are provided for the respective phases on the upper surface of the other long side portion 27 on the left side. An insert nut (not shown) that is electrically connected to each of the terminals 33, 35, and 37 is embedded in the long side portion 27. The electrical connection structure between the insert nut and the base 17 side is omitted.

そして、本実施形態では、周壁5内に上下方向に貫通するようにして延びる通気孔39を形成している。ここでの通気孔39は、図2に示すように、U、V、Wの各1相分に対応する周壁5の一対の長辺部27にそれぞれ2箇所、周壁5の短辺部29には3箇所設けている。図2では、通気孔39を隔壁部31に設けていないが、隔壁部31に設けることもできる。なお、図1の周壁5の左右の長辺部27の断面構造は、図1中で左側が図2のA−A断面図に対応し、図1中で右側が図2のB−B断面図に対応している。   And in this embodiment, the vent hole 39 extended so that it may penetrate in the up-down direction in the surrounding wall 5 is formed. As shown in FIG. 2, the ventilation holes 39 here are provided at two locations on the pair of long side portions 27 of the peripheral wall 5 corresponding to each phase of U, V, and W, respectively, and on the short side portion 29 of the peripheral wall 5. Are provided in three places. In FIG. 2, the vent holes 39 are not provided in the partition wall 31, but can be provided in the partition wall 31. The cross-sectional structure of the left and right long side portions 27 of the peripheral wall 5 in FIG. 1 corresponds to the AA cross section in FIG. 2 on the left side in FIG. 1, and the BB cross section in FIG. Corresponds to the figure.

通気孔39は、図1に示すように、周壁5の上面に空気放出口となる開口39aを備え、下部はケース7内の領域9の底部に、連通部39bを介して連通している。連通部39bは、複数の通気孔39の下部相互を連通し、周壁5(長辺部27、短辺部29)及び隔壁部31の内周側の全周にわたり連続して形成されている。   As shown in FIG. 1, the vent hole 39 includes an opening 39 a serving as an air discharge port on the upper surface of the peripheral wall 5, and a lower portion communicates with a bottom portion of the region 9 in the case 7 via a communication portion 39 b. The communication portion 39 b communicates with the lower portions of the plurality of vent holes 39 and is continuously formed over the entire circumference on the inner peripheral side of the peripheral wall 5 (long side portion 27, short side portion 29) and the partition wall portion 31.

連通部39bは、図2のB−B線に対応する断面構造(図1の右側の長辺部27)で示すように、ケース7内の領域9に直接連通して開口する開口部39b1と、開口部39b1の領域9と反対側位置にて開口部39b1よりも上方に位置する連通路39b2とを備えている。連通路39b2は、互いに隣接する通気孔39の下部相互を連通している。このような開口部39b1及び連通路39b2は、周壁5の領域9側の部分を下方に突出させる突起39cを設けることで形成することができる。突起39cは、周壁5(長辺部27、短辺部29)及び隔壁部31の内周側の全周にわたり連続して設けてある。すなわち、突起39cをこのようにして全周にわたり設けることで、開口部39b1が全周にわたり形成される。   As shown in the cross-sectional structure corresponding to the line BB in FIG. 2 (the long side portion 27 on the right side in FIG. 1), the communication portion 39 b is directly connected to the region 9 in the case 7 and opens to the opening 39 b 1. And a communication passage 39b2 positioned above the opening 39b1 at a position opposite to the region 9 of the opening 39b1. The communication path 39b2 communicates the lower portions of the adjacent vent holes 39 with each other. Such an opening 39b1 and the communication path 39b2 can be formed by providing a projection 39c that projects a portion of the peripheral wall 5 on the region 9 side downward. The protrusion 39 c is provided continuously over the entire circumference on the inner peripheral side of the peripheral wall 5 (long side portion 27, short side portion 29) and the partition wall portion 31. That is, by providing the protrusion 39c over the entire circumference in this way, the opening 39b1 is formed over the entire circumference.

図3は、図2のC−C断面図であり、連通路39b2は、互いに隣接する通気孔39同士を直接連通している。また、図3に示すように、通気孔39は、開口39a側が狭く、連通部39b側が広くなるようなテーパ形状としている。   3 is a cross-sectional view taken along the line C-C in FIG. 2, and the communication path 39 b 2 directly communicates the adjacent vent holes 39 with each other. Further, as shown in FIG. 3, the vent hole 39 has a tapered shape such that the opening 39a side is narrow and the communicating portion 39b side is wide.

図4〜図7は、より具体化したケース7の形状を示すもので、図1、図2と同一構成部分には同一符号を付して説明する。図4は、図2に対応しているが、図2に対し紙面上で時計回り方向に90度回転した図となっている。ただし、図4と図2とでは、電源用端子33,35とU、V、W端子37とが、互いに反対側の長辺部27に設けられている点で異なる。また、図4では、隔壁部31にも通気孔39を設けている。   4 to 7 show a more specific shape of the case 7, and the same components as those in FIGS. 1 and 2 are denoted by the same reference numerals. FIG. 4 corresponds to FIG. 2, but is a view rotated 90 degrees in the clockwise direction on the paper with respect to FIG. 2. However, FIG. 4 and FIG. 2 differ in that the power supply terminals 33 and 35 and the U, V, and W terminals 37 are provided on the long side portions 27 on the opposite sides. In FIG. 4, a vent hole 39 is also provided in the partition wall 31.

図5は図4のD−D断面図、図6は図4のE−E断面図であり、周壁5(長辺部27、短辺部29)の下部には、図5、図6中で左右方向に延びる開口部39b1が形成されているのがわかる。また、図5に示すように、短辺部29及び隔壁部31の下部には、開口部39b1に連通して開口部39b1より上方に位置する連通路39b2が形成されているのがわかる。   5 is a sectional view taken along the line DD of FIG. 4, and FIG. 6 is a sectional view taken along the line EE of FIG. 4. The lower part of the peripheral wall 5 (long side portion 27, short side portion 29) is shown in FIGS. It can be seen that an opening 39b1 extending in the left-right direction is formed. Further, as shown in FIG. 5, it can be seen that a communication path 39b2 is formed below the short side portion 29 and the partition wall portion 31 so as to communicate with the opening 39b1 and to be positioned above the opening 39b1.

図7(a)は図4のF−F断面図であり、周壁5における長辺部27の下部には、上記図6の開口部39b1の奥側に図7(a)中で左右方向に延びる連通路39b2が形成されているのがわかる。この連通路39b2は、互いに隣接する通気孔39の下部同士を直接連通している。   7A is a cross-sectional view taken along the line F-F in FIG. 4. In the lower part of the long side portion 27 in the peripheral wall 5, the back side of the opening 39 b 1 in FIG. It can be seen that an extended communication path 39b2 is formed. The communication passage 39b2 directly communicates the lower portions of the adjacent vent holes 39 with each other.

図7(b)は図7(a)の変形例であり、連通路39b2内の上壁の下面に左右一対の傾斜面39b3を形成している。この一対の傾斜面39b3は、ケース7の周壁5の周方向に沿って互いに隣接する通気孔39相互間のほぼ中心位置Sに対し、通気孔39側が上方となるよう傾斜している。すなわち、通気孔39の下端開口部は、中心位置Sよりも上方に位置している。   FIG. 7B is a modification of FIG. 7A, and a pair of left and right inclined surfaces 39b3 are formed on the lower surface of the upper wall in the communication passage 39b2. The pair of inclined surfaces 39b3 are inclined so that the air hole 39 side is upward with respect to the substantially central position S between the air holes 39 adjacent to each other along the circumferential direction of the peripheral wall 5 of the case 7. That is, the lower end opening of the vent hole 39 is located above the center position S.

次に、作用を説明する。図1、図2のように、周壁5及び隔壁部31で囲まれた領域9内の半導体モジュール本体25に対し、図8のようにエポキシ樹脂41でポッティングにより封止する。このようなポッティングに使用するエポキシ樹脂41は粘土が比較的高いことから、領域9に樹脂を充填する過程で、該樹脂によって空気が内部に閉じ込められてしまい、図9のように通気孔39を設けていない比較例で示すように、ケース7の下部(底部)に大きな気泡43が発生してしまう。   Next, the operation will be described. As shown in FIGS. 1 and 2, the semiconductor module body 25 in the region 9 surrounded by the peripheral wall 5 and the partition wall 31 is sealed by potting with an epoxy resin 41 as shown in FIG. Since the epoxy resin 41 used for such potting is relatively high in clay, air is trapped inside by the resin in the process of filling the region 9 with the resin, and the vent holes 39 are formed as shown in FIG. As shown in the comparative example which is not provided, a large bubble 43 is generated in the lower part (bottom part) of the case 7.

このような大きな気泡43の発生は、特にセラミックス基板11の両面に金属層13,15を設けた台座17を備える実装構造で顕著となる。この場合、台座17を製造する際にセラミックス基板11を保持した状態で金属層13,15を形成する必要があることから、セラミックス基板11の周縁を金属層13,15から突出させた保持部11aを備えている。このため、該保持部11aが庇となってその下部に気泡43が発生しやすい。   The generation of such large bubbles 43 is particularly noticeable in a mounting structure including the base 17 provided with the metal layers 13 and 15 on both surfaces of the ceramic substrate 11. In this case, since it is necessary to form the metal layers 13 and 15 while holding the ceramic substrate 11 when the pedestal 17 is manufactured, the holding portion 11a in which the periphery of the ceramic substrate 11 protrudes from the metal layers 13 and 15 is required. It has. For this reason, the holding part 11a becomes a ridge and bubbles 43 are easily generated in the lower part thereof.

これに対して本実施形態では、周壁5や隔壁部31に通気孔39及び、通気孔39の下部に連通する連通部39bを設けている。このため、エポキシ樹脂41を充填する過程で、該充填するエポキシ樹脂41により下部に空気が閉じ込められても、該空気は連通部39b及び通気孔39を経て通気孔39の上部の開口39aから外部に放出される。このため、図8に示すように、セラミックス基板11に上記した保持部11aを備える実装構造であっても、エポキシ樹脂41をより確実にケース7の底部に導くことができ、発生する気泡43を、より小さく抑えることができる。   On the other hand, in the present embodiment, the peripheral wall 5 and the partition wall 31 are provided with a vent hole 39 and a communication portion 39 b communicating with the lower portion of the vent hole 39. Therefore, even when air is trapped in the lower part by the filled epoxy resin 41 in the process of filling the epoxy resin 41, the air passes through the communication part 39 b and the vent hole 39 to the outside from the opening 39 a at the upper part of the vent hole 39. To be released. For this reason, as shown in FIG. 8, even in the mounting structure including the holding portion 11 a described above on the ceramic substrate 11, the epoxy resin 41 can be more reliably guided to the bottom portion of the case 7, and the generated bubbles 43 are generated. , Can be kept smaller.

その際、上記通気孔39の下部は、連通部39bを通してケース7の底部に連通しているので、ケース7の底部(底面)に押し込められる空気を、連通部39b及び通気孔39を通してより確実に外部に放出することができる。気泡43をより小さくすることで、充填後のエポキシ樹脂41が剥がれにくくなり、ポッティングして封止することによる、防湿や絶縁効果及び、半田寿命の向上など、信頼性の高い製品が得られる。   At that time, since the lower part of the vent hole 39 communicates with the bottom part of the case 7 through the communication part 39 b, the air pushed into the bottom part (bottom face) of the case 7 can be more reliably transmitted through the communication part 39 b and the vent hole 39. Can be released to the outside. By making the bubbles 43 smaller, the filled epoxy resin 41 is less likely to be peeled off, and a highly reliable product such as moisture-proofing, insulating effect, and improvement in solder life can be obtained by potting and sealing.

また、本実施形態では、複数の通気孔39の下部相互を連通する連通部39bが周壁5や隔壁部31の下部に設けられ、連通部39bの開口部39b1は、ケース7内の底部に開口して側壁である周壁5及び隔壁部31の全周にわたり連続して形成されている。このため、ケース7の底部に押し込められた空気は、周壁5(長辺部27、短辺部29)及び隔壁部31で囲まれた領域9内の周囲全周の広い範囲にわたり外部に放出でき、気泡43の発生をより低減することができる。   Further, in the present embodiment, a communication portion 39b that communicates with the lower portions of the plurality of vent holes 39 is provided in the lower portion of the peripheral wall 5 and the partition wall portion 31, and the opening 39b1 of the communication portion 39b opens at the bottom of the case 7. Thus, it is continuously formed over the entire circumference of the peripheral wall 5 and the partition wall 31 which are side walls. For this reason, the air pushed into the bottom of the case 7 can be discharged to the outside over a wide range of the entire circumference in the region 9 surrounded by the peripheral wall 5 (long side portion 27, short side portion 29) and the partition wall portion 31. The generation of bubbles 43 can be further reduced.

また、本実施形態では、連通部39bは、複数の通気孔39の下部相互を直接連通する連通路39b2と、この連通路39b2より下方に位置してケース7内の底部に開口する開口部39b1と、を有している。この場合、ケース7内の底部から開口部39b1に取り込んだ空気は、その一部が通気孔39に対応する位置付近から通気孔39に直接流れ、他の一部が図3、図7に示す連通路39b2に一旦取り込まれる。   In the present embodiment, the communication portion 39b includes a communication passage 39b2 that directly communicates with the lower portions of the plurality of vent holes 39, and an opening 39b1 that is located below the communication passage 39b2 and opens at the bottom in the case 7. And have. In this case, part of the air taken into the opening 39b1 from the bottom in the case 7 flows directly from the vicinity of the position corresponding to the vent 39 to the vent 39, and the other part is shown in FIGS. Once taken into the communication path 39b2.

上記連通路39b2に一旦取り込まれた空気は、連通路39b2を周方向に流れて通気孔39に達し、通気孔39の上部の開口39aから外部に放出される。この場合、開口部39b1から、開口部39b1より上方位置にある連通路39b2に取り込んだ空気を、図1、図5に示す突起39cによって、連通路39b2から開口部39b1へ逆流するのを抑えることになり、通気孔39に効率よく導くことができる。   The air once taken into the communication path 39b2 flows in the circumferential direction through the communication path 39b2, reaches the vent hole 39, and is discharged to the outside from the opening 39a at the upper part of the vent hole 39. In this case, the air taken into the communication path 39b2 located above the opening 39b1 from the opening 39b1 is prevented from flowing back from the communication path 39b2 to the opening 39b1 by the projection 39c shown in FIGS. Thus, the air can be efficiently guided to the vent hole 39.

また、本実施形態では、連通路39b2内の上壁の下面は、図7(b)に示すように、周壁5や隔壁部31の周方向に沿って互いに隣接する通気孔39相互間の中心位置Sに対し、通気孔39側が上方となるよう傾斜している傾斜面39b3を備える構成とすることもできる。この場合、開口部39b1から連通路39b2に取り込んだ空気が、傾斜面39b3に沿って通気孔39までより効率よく円滑に流れ、空気の放出効率がより向上し、気泡43の発生をより一層低減することができる。   In the present embodiment, the lower surface of the upper wall in the communication passage 39b2 is the center between the adjacent vent holes 39 along the circumferential direction of the peripheral wall 5 and the partition wall 31 as shown in FIG. 7B. It can also be set as the structure provided with the inclined surface 39b3 inclined so that the ventilation hole 39 side may become the upper side with respect to the position S. In this case, the air taken into the communication path 39b2 from the opening 39b1 flows more efficiently and smoothly along the inclined surface 39b3 to the vent hole 39, the air discharge efficiency is further improved, and the generation of bubbles 43 is further reduced. can do.

また、本実施形態では、ケース7の内側の領域9内の空気を、通気孔39を通して外部に逃がす際に、通気孔39の外部から空気を吸引するようにすることもできる。これにより、領域9内に注入する樹脂が、例えば自重によりケース7の底部まで到達しにくい程粘度が高い場合であっても、空気を通気孔39から強制的に吸引することにより、樹脂をケース7の底部まで行き渡らせ、これによって気泡43の発生を抑えることができる。   Further, in the present embodiment, when the air in the region 9 inside the case 7 is allowed to escape to the outside through the vent hole 39, the air can be sucked from the outside of the vent hole 39. Thus, even if the resin injected into the region 9 is so viscous that it is difficult to reach the bottom of the case 7 due to its own weight, for example, the resin is forced to be sucked from the vent hole 39 to remove the resin from the case 9. 7, the generation of the bubbles 43 can be suppressed.

以上、本発明の実施形態について説明したが、これらの実施形態は本発明の理解を容易にするために記載された単なる例示に過ぎず、本発明は当該実施形態に限定されるものではない。本発明の技術的範囲は、上記実施形態で開示した具体的な技術事項に限らず、そこから容易に導きうる様々な変形、変更、代替技術なども含むものである。   As mentioned above, although embodiment of this invention was described, these embodiment is only the illustration described in order to make an understanding of this invention easy, and this invention is not limited to the said embodiment. The technical scope of the present invention is not limited to the specific technical matters disclosed in the above embodiment, but includes various modifications, changes, alternative techniques, and the like that can be easily derived therefrom.

例えば、上記した実施形態では、ポッティングで使用する樹脂をエポキシ樹脂41としているが、これに限るものではない。また、セラミックス基板11の周縁を金属層13,15から突出させた保持部11aを備えていない実装構造にも、本発明を適用できる。   For example, in the above-described embodiment, the resin used for potting is the epoxy resin 41, but is not limited thereto. Further, the present invention can also be applied to a mounting structure that does not include the holding portion 11 a in which the peripheral edge of the ceramic substrate 11 is protruded from the metal layers 13 and 15.

1 パワー半導体モジュール(半導体モジュール)
5 ケースの周壁(ケースの側壁)
7 ケース
9 ケースの側壁の内側の領域
23 パワー半導体素子
31 隔壁部(ケースの側壁)
39 通気孔
39b 連通部
39b1 連通部の開口部
39b2 連通部の連通路
39b3 連通路の傾斜面(上壁の下面)
41 エポキシ樹脂(樹脂)
1 Power semiconductor module (semiconductor module)
5 Case peripheral wall (case side wall)
7 Case 9 Region inside the side wall of the case 23 Power semiconductor element 31 Partition (side wall of the case)
39 Ventilation hole 39b Communication portion 39b1 Opening portion of communication portion 39b2 Communication passage of communication portion 39b3 Inclined surface of communication passage (lower surface of upper wall)
41 Epoxy resin (resin)

Claims (7)

セラミックス基板(11)の上下両側に金属層(13,15)を備え、上部の前記金属層(13)の上に半導体素子(23)が実装された半導体モジュール本体(25)を、ケース(7)内に配置し、前記半導体モジュール本体(25)を樹脂(41)でポッティングして封止する構造の半導体モジュール(1)であって、
前記セラミックス基板(11)は、周縁が前記金属層(13,15)から突出する保持部(11a)を備え、
前記ケース(7)の側壁(5,31)は、上下方向に延びる通気孔(39)を複数備え、
前記側壁(5,31)の下部に、前記通気孔(39)の下部と前記ケース(7)内の底部とを連通する連通部(39b)が設けられ、
前記連通部(39b)は、前記保持部(11a)に近接する位置に形成され
前記連通部(39b)は、前記複数の通気孔(39)の下部相互を連通し、前記ケース(7)内の底部に開口して前記側壁(5,31)の全周にわたり連続して形成されていることを特徴とする半導体モジュール。
A semiconductor module body (25) provided with metal layers (13, 15) on both upper and lower sides of the ceramic substrate (11) and having a semiconductor element (23) mounted on the upper metal layer (13) is provided with a case (7 A semiconductor module (1) having a structure in which the semiconductor module body (25) is potted and sealed with a resin (41),
The ceramic substrate (11) includes a holding portion (11a) whose peripheral edge protrudes from the metal layer (13, 15),
The side wall (5, 31) of the case (7) includes a plurality of vent holes (39) extending in the vertical direction,
A communication part (39b) is provided at the lower part of the side wall (5, 31) to communicate the lower part of the vent hole (39) and the bottom part in the case (7),
The communication part (39b) is formed at a position close to the holding part (11a) ,
The communication portion (39b) communicates with the lower portions of the plurality of vent holes (39), and opens at the bottom of the case (7) to be continuously formed over the entire circumference of the side wall (5, 31). The semiconductor module characterized by the above-mentioned.
前記連通部(39b)は、前記保持部(11a)よりも下方に位置していることを特徴とする請求項1に記載の半導体モジュール。   The semiconductor module according to claim 1, wherein the communication part (39b) is located below the holding part (11a). 前記連通部(39b)は、複数の通気孔(39)の下部相互を連通する連通路(39b2)と、この連通路(39b2)より下方に位置して前記ケース(7)内の底部に開口する開口部(39b1)と、を有することを特徴とする請求項1または2に記載の半導体モジュール。 The communication part (39b) is located below the communication path (39b2) and communicates with the lower part of the plurality of vent holes (39), and is open at the bottom of the case (7). the semiconductor module according to claim 1 or 2, characterized in that it has openings to (39b1), the. 前記側壁(5,31)が下方に突出する突起(39c)を備えることで、前記開口部(39b1)が前記連通路(39b2)より下方に位置することを特徴とする請求項に記載の半導体モジュール。 The said side wall (5, 31) is provided with the protrusion (39c) which protrudes below, The said opening part (39b1) is located below the said communicating path (39b2), The Claim 3 characterized by the above-mentioned. Semiconductor module. 前記連通路(39b2)内の上壁の下面(39b3)は、前記側壁(5,31)の周方向に沿って互いに隣接する前記通気孔(39)相互間の位置(S)に対し、前記通気孔(39)側が上方となるよう傾斜していることを特徴とする請求項またはに記載の半導体モジュール。 The lower surface (39b3) of the upper wall in the communication passage (39b2) is located at a position (S) between the vent holes (39) adjacent to each other along the circumferential direction of the side wall (5, 31). the semiconductor module according to claim 3 or 4, characterized in that the ventilation holes (39) side is inclined so as to be upward. セラミックス基板(11)の上下両側に金属層(13,15)を備え、上部の前記金属層(13)の上に半導体素子(23)が実装された半導体モジュール本体(25)を、ケース(7)内に配置し、前記半導体モジュール本体(25)を樹脂(41)でポッティングして封止する半導体モジュール(1)の製造方法であって、
前記セラミックス基板(11)は、周縁が前記金属層(13,15)から突出する保持部(11a)を備え、
前記ケース(7)の側壁(5,31)に設けられた上下方向に延びる複数の通気孔(39)の下部相互を連通し、前記通気孔(39)の下部と前記ケース(7)内の底部とを連通する連通部(39b)が、前記ケース(7)内の底部の前記保持部(11a)に近接する位置の前記側壁(5,31)の下部に設けられ、前記連通部(39b)は、前記ケース(7)内の底部に開口して前記側壁(5,31)の全周にわたり連続して形成され、
前記ケース(7)の側壁(5,31)の内側の前記半導体モジュール本体(25)が配置されている領域(9)に前記樹脂(41)を注入する際に、前記連通部(39b)及び前記通気孔(39)を通して前記ケース(7)の側壁(5,31)の内側の領域(9)内の空気を外部に逃がすことを特徴とする半導体モジュールの製造方法。
A semiconductor module body (25) provided with metal layers (13, 15) on both upper and lower sides of the ceramic substrate (11) and having a semiconductor element (23) mounted on the upper metal layer (13) is provided with a case (7 ), And the semiconductor module body (25) is potted with a resin (41) and sealed to manufacture the semiconductor module (1),
The ceramic substrate (11) includes a holding portion (11a) whose peripheral edge protrudes from the metal layer (13, 15),
The lower portions of a plurality of vertically extending vent holes (39) provided on the side walls (5, 31) of the case (7) communicate with each other, and the lower portions of the vent holes (39) and the inside of the case (7) A communication part (39b) communicating with the bottom part is provided at a lower part of the side wall (5, 31) at a position close to the holding part (11a) at the bottom part in the case (7), and the communication part (39b) ) Is continuously formed over the entire circumference of the side wall (5, 31) opening to the bottom in the case (7),
Inside the when injecting the resin (41) in the region (9) of the semiconductor module main body (25) is arranged, before Killen communicating portion of the side wall (5, 31) of said case (7) (39 b) the method of manufacturing a semiconductor module, characterized in that the escape of air inside the region (9) of the side wall (5, 31) of said case (7) to the outside through及beauty before Symbol vent (39).
セラミックス基板(11)の上下両側に金属層(13,15)を備え、上部の前記金属層(13)の上に半導体素子(23)が実装された半導体モジュール本体(25)を、ケース(7)内に配置し、前記半導体モジュール本体(25)を樹脂(41)でポッティングして封止する半導体モジュール(1)の製造方法であって、
前記セラミックス基板(11)は、周縁が前記金属層(13,15)から突出する保持部(11a)を備え、
前記ケース(7)の側壁(5,31)の内側の前記半導体モジュール本体(25)が配置されている領域(9)に前記樹脂(41)を注入する際に、前記ケース(7)の側壁(5,31)に設けた通気孔(39)の外部から空気を吸引することで、前記ケース(7)内の底部の前記保持部(11a)に近接する位置の前記側壁(5,31)の下部に設けた連通部(39b)及び前記通気孔(39)を通して前記ケース(7)の側壁(5,31)の内側の領域(9)内の空気を外部に逃がすことを特徴とする半導体モジュールの製造方法。
A semiconductor module body (25) provided with metal layers (13, 15) on both upper and lower sides of the ceramic substrate (11) and having a semiconductor element (23) mounted on the upper metal layer (13) is provided with a case (7 ), And the semiconductor module body (25) is potted with a resin (41) and sealed to manufacture the semiconductor module (1),
The ceramic substrate (11) includes a holding portion (11a) whose peripheral edge protrudes from the metal layer (13, 15),
When the resin (41) is injected into the region (9) where the semiconductor module body (25) is disposed inside the side wall (5, 31) of the case (7), the side wall of the case (7) (5, 31) in by sucking air from the outside of the vents (39) which is provided, the side wall at a position adjacent to the holding portion of the bottom of the inner case (7) (11a) (5, 31) The air in the region (9) inside the side wall (5, 31) of the case (7) is released to the outside through the communication portion (39b) provided in the lower part of the case and the vent hole (39). Module manufacturing method.
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