JP6270378B2 - Oscillating element, actuator device, and optical scanning device - Google Patents

Description

  The present invention relates to an oscillating element, an actuator device, an optical scanning device, a metal thin film body, and an optical scanning device manufacturing method.

  As a method of forming a metal thin film structure, there is a method of forming a metal thin film on a substrate, forming a resist on the metal thin film by photolithography, and then removing unnecessary portions of the metal film by etching. Also, after forming a resist pattern with an inversely tapered edge on the substrate by photolithography, a metal thin film is formed by sputtering, and the so-called lift-off method in which the photoresist and the metal thin film formed on the resist are removed. Is also known.

  On the other hand, an expensive apparatus is required to perform photolithography. Further, since the photoresist is an organic substance, a gas is generated when the metal thin film is formed by sputtering after the photoresist patterning, and this gas can adversely affect the film quality of the metal thin film. Furthermore, the photoresist is affected by temperature rise and plasma during sputter deposition, and it may be difficult to remove the metal thin film from the photoresist.

  Therefore, a method for forming a metal thin film structure without using photolithography has been developed. For example, Patent Document 1 discloses a method of forming a metal thin film structure having a shape corresponding to an opening of a metal mask by forming a metal film after placing the metal mask on a substrate. Yes. Patent Document 2 discloses a method in which a release layer is formed on a substrate on which a concavo-convex pattern is formed, a metal thin film is formed on the release layer, and the metal thin film on the convex surface is transferred to another substrate. It is disclosed.

JP 2011-61193 A JP 2010-267719 A

  However, the shape that can be formed by the method of Patent Document 1 is limited. For example, a donut-shaped structure is difficult to manufacture because a corresponding metal mask cannot be formed integrally. Further, in the method of Patent Document 2, since the adhesive force between the metal thin film and the substrate is low, for example, when a larger metal thin film or a thicker metal thin film is produced, transfer is performed due to the film formation stress of the metal thin film. Peeling may occur before. In any case, conventionally, it has been difficult to manufacture an oscillating element made of a metal thin film body in a desired shape.

  The present invention relates to an improvement in the performance of an oscillating element using a metal thin film. The present invention can also produce metal thin film structures of various shapes.

The oscillating element of the present invention has the following characteristics. That is,
A beam portion, and a swinging portion supported so as to be swingable by being connected to the fixed portion via the beam portion,
The beam portion and the swinging portion are formed of a metal thin film body having substantially the same film thickness and formed of metal glass, and are cross sections perpendicular to the metal thin film surface of the metal thin film body. And a cross section perpendicular to the metal thin film surface of the metal thin film body, and a pair of corners facing in the thickness direction at both ends of the cross section in the width direction of the beam portion, and A pair of corners facing each other in the thickness direction on the both ends of the cross section of the oscillating portion in the same direction as the width direction or in a direction perpendicular to the width direction of the beam portion has an equivalent shape. .

  The present invention is effective for improving the performance of a vibration element using a metal thin film body. Moreover, various shapes of metal thin film structures can be produced.

FIG. 3 is a schematic diagram illustrating each step in the manufacturing method according to the first embodiment. FIG. 3 is a schematic cross-sectional view of a film forming jig in the middle of the manufacturing method according to the first embodiment. FIG. 5 is a schematic diagram of a film forming jig used in Embodiment 2. FIG. 6 is an exploded view of a film forming jig used in Embodiment 2. FIG. 6 is a schematic diagram of another example of a film forming jig used in the second embodiment. FIG. 6 is a schematic diagram of another example of a film forming jig used in the second embodiment. FIG. 3 is a schematic cross-sectional view of an element manufactured in Embodiment 2. FIG. 6 is a schematic diagram of an optical scanning device according to a third embodiment. FIG. 6 is a schematic diagram illustrating a method for manufacturing an optical scanning device according to a third embodiment. FIG. 6 is a diagram illustrating a cross-sectional shape of an element used in an optical scanning device according to a third embodiment. The figure which shows the relationship between the opening part in sputter film deposition, and the shape of the film | membrane formed. The figure explaining the control method of a film thickness. FIG. 6 is a schematic diagram of an optical scanning device according to a fourth embodiment. FIG. 6 is a schematic diagram of an optical scanning device according to a fourth embodiment. FIG. 6 is a schematic diagram of a film forming jig used in Embodiment 4. FIG. 6 is a schematic diagram illustrating a method for manufacturing an optical scanning device according to a fourth embodiment. FIG. 6 is a schematic diagram illustrating a method for manufacturing an optical scanning device according to a fourth embodiment. FIG. 6 is a schematic diagram illustrating a method for manufacturing an optical scanning device according to a fourth embodiment. FIG. 6 is a schematic diagram illustrating a method for manufacturing an optical scanning device according to a fourth embodiment. FIG. 6 is a diagram for explaining a manufacturing method according to the second embodiment. The figure which shows the film-forming jig used in the Example of Embodiment 2. FIG. The figure which shows the film-forming jig in the middle of manufacture in the Example of Embodiment 2. FIG. The figure which shows the shape of the metal thin film in the middle of manufacture in the Example of Embodiment 2. The figure which shows the metal thin film body produced in the Example of Embodiment 2. FIG. FIG. 10 shows a shape of a structure manufactured in Comparative Example 1. FIG. 9 shows a shape of a structure manufactured in Comparative Example 2. The schematic diagram explaining the manufacturing method which concerns on Embodiment 2 and Comparative Examples 1 and 2. FIG.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings. However, the scope of the present invention is not limited to the following embodiments.

[Embodiment 1]
Hereinafter, the manufacturing method of the metal thin film body which concerns on Embodiment 1 is demonstrated. FIG. 1 is a schematic diagram illustrating each process of the manufacturing method according to the first embodiment.

  FIG. 1A shows a film forming jig 1 used in this embodiment. The film-forming jig 1 has a concavo-convex pattern corresponding to the shape of the metal thin film to be produced. Specifically, the film formation jig 1 is a film formation jig for producing a ring-shaped metal thin film body, and has a convex portion having a ring shape similar to the metal thin film body to be produced, and a concave portion. But you may respond | correspond to the shape of the metal thin film body which a recessed part produces.

  The material for the film forming jig 1 is not particularly limited. A material that is not damaged in the step of removing the sacrificial layer later is preferable in that the film-forming jig 1 can be reused. As a material for the film forming jig 1, any material can be selected according to the conditions used for removing the sacrificial layer. A preferred example of the material for the film forming jig when the sacrificial layer is removed using an acid is stainless steel. Specific examples of stainless steel include, but are not limited to, SUS304, SUS430, SUS420J2, and SUS630, and improved materials thereof. In the present embodiment, SUS304 is used as the material of the film forming jig 1.

  It is preferable that the material constituting the concave portion of the film-forming jig 1 and the material constituting the convex portion are the same in that a uniform thin film can be easily obtained.

  In the manufacturing method according to the present embodiment, first, a sacrificial layer 2 is formed on a film-forming jig 1 as shown in FIG. The method for forming the sacrificial layer 2 is not particularly limited, and examples thereof include a vacuum deposition method and a sputtering method.

  The material of the sacrificial layer 2 is not particularly limited as long as it is a material that can be removed in the step of removing the sacrificial layer later. When the metal thin film 3 is formed, the sacrificial layer 2 may have good adhesion to the film forming jig 1 and the metal thin film 3 from the viewpoint of preventing peeling due to film formation stress. preferable. The sacrificial layer 2 preferably does not adversely affect the properties of the metal thin film 3. From such a viewpoint, it is preferable to use a metal thin film as the sacrificial layer 2.

  Next, a metal thin film 3 is formed on the sacrificial layer 2 as shown in FIG. By the step of forming the metal thin film on the sacrificial layer, a metal thin film body having a desired shape corresponding to the shape of the convex portion or the concave portion is formed on the convex portion or the concave portion constituting the concave / convex pattern of the film forming jig 1. .

  The material of the metal thin film 3 is not particularly limited as long as it is a metal material. In this embodiment, a Cu—Zr—Ti-based metal glass is used, but an amorphous metal including a metal glass having another composition or a metal including a microcrystalline metal can also be used.

Examples of the metallic glass that can be used in the present embodiment include metallic glass having the following composition. In the following composition, Ln represents a lanthanoid, and (A ¹ , A ² ,...) Represents that at least one of A ¹ , A ² ,.

  Al-containing composition: Al-Ni-Ce-Fe, Al-Ni-Y

  Au-containing composition: Au-Ag-Pd-Cu-Si, Au-Ge-Si

  Ca-containing composition: Ca-Ag, Ca-Cu-Ag-Mg, Ca-Mg-Cu, Ca-Mg-Zn

  Ce-containing composition: Ce-Al-Ni-Cu

  Co-containing composition: Co— (Al, Ga) — (P, B, Si), Co— (Zr, Hf, Nb) —B, Co—Fe—Si—B—Nb, Co—Fe—Ta—B, Co-Fe-Ta-B-Si, Co-Si-B, Co-Ta-B

  Cu-containing composition: Cu- (Zr, Hf) -Ti, Cu- (Zr, Hf) -Ti- (Fe, Co, Ni), Cu- (Zr, Hf) -Ti- (Y, Be), Cu- Hf-Ti, Cu-Pd-Zr-Ag-Al, Cu-Zr, Cu-Zr-Al, Cu-Zr-Al-Ag, Cu-Zr-Al-Nb, Cu-Zr-Ti, Cu-Zr- Ti-Co

  Fe-containing composition: (Fe, Co) -B-Si-Nb, Fe- (Al, Ga)-(P, C, B, Si, Ge), Fe- (Cr, Mo)-(C, B)- Ln, Fe- (Nb, Cr, Mo)-(C, B), Fe- (Nb, Mo)-(Al, Ga)-(P, B, Si), Fe- (Zr, Hf, Nb)- B, Fe-B-Si-Nb, Fe-Co-Ln-B, Fe-Ga- (Cr, Mo)-(P, C, B), Fe-Ga- (P, B), Fe-Si- B-Nb, Fe-Si-BP, Fe-Zr-Y-Co-Mo-Al-B

  Hf-containing composition: Hf-Al-Ni-Cu, Hf-Al-Ni-Cu-Pd, Hf-Al-Ni-Cu-Pt

  La-containing composition: La-Al-Ni-Cu, La-Al-Ni-Cu-Co, La-Al-Ni-P, La-Ni-Al

  Mg-containing composition: Mg-Cu-Gd, Mg-Cu-Y, Mg-Cu-Y-Ag-Pd

  Nd-containing composition: Nd-Al-Fe-Co

  Ni-containing composition: Ni— (Nb, Cr, Mo) — (P, B), Ni— (Nb, Ta) —Zr—Ti, Ni— (Zr, Hf, Nb) —B, Ni—Cu—Ti— Zr-Al, Ni-Nb-Ti-Zr, Ni-Nb-Ti-Zr-Co-Cu, Ni-Si-B, Ni-Ti-Zr-Al

  Pd-containing composition: Pd—Cu—Ni—P, Pd—Cu—Si, Pd—Ni—Cu—P, Pd—Ni—Fe—P, Pd—Ni—P, Pd—Pt—Cu—P, Pd— Si, Pd-Si-Cu

  Pt-containing composition: Pt—Cu—Co—P, Pt—Cu—Ni—P, Pt—Cu—P, Pt—Ni—P

  Ru-containing composition: Ru-Zr-Al, Ru-Zr-Mo

  Ti-containing composition: (Ti, Zr, Hf) -Cu-Ni-Si, Ti-Cu- (Zr, Hf)-(Co, Ni), Ti-Cu-Ni-Sn, Ti-Cu-Zr-Pd, Ti-Ni-Cu-B-Si-Sn, Ti-Ni-Cu-Sn, Ti-Zr-Hf-Cu-Ni-Si, Ti-Zr-Cu, Ti-Zr-Ni, Ti-Zr-Fe

  Zr-containing composition: Zr-Cu-Ag-Al-Pd, Zr-Cu-Ni-Al-Pd, Zr-Cu-Ni-Ag-Al, Zr-Cu-Ni-Al, Zr-Cu-Ni-Al- Ta, Zr-Nb-Cu-Ni-Al, Zr-Ni, Zr-Ti-Cu-Ni-Al, Zr-Ti-Cu-Ni-Be

  Next, the metal thin film 3 is separated from the film forming jig 1. At this time, as shown in FIG. 1 (d), the sacrificial layer is formed from the laminate including the sacrificial layer 2 and the metal thin film 3 on the film forming jig 1. 2 is at least partially removed. The metal thin film 3 can be easily separated from the film forming jig 1 by at least partially removing the sacrificial layer 2. Preferably, the entire sacrificial layer 2 is removed from the film forming jig 1 and the metal thin film 3.

  As a method for removing the sacrificial layer 2, etching conditions suitable for the material of the sacrificial layer 2 can be used. The etchant enters between the film forming jig 1 and the metal thin film 3 and removes the sacrificial layer 2. The etching conditions are not particularly limited as long as the sacrificial layer 2 can be removed without damaging the metal thin film 3. For example, the sacrificial layer 2 can be at least partially removed using a processing solution for dissolving the sacrificial layer 2, that is, a solution for dissolving the sacrificial layer 2, under wet etching conditions. Also, the sacrificial layer 2 can be at least partially removed using a reactive gas under dry etching conditions.

  In the case of using the treatment liquid, a laminated body including the sacrificial layer 2 and the metal thin film 3 on the film forming jig 1 or a part including at least the sacrifice layer 2 in the laminated body may be immersed in the treatment liquid. The treatment liquid is not particularly limited as long as the sacrificial layer 2 can be dissolved without damaging the metal thin film 3, and can be appropriately selected according to the material of the metal thin film 3 and the sacrificial layer 2. For example, in the present embodiment, stainless steel SUS304 is used as the material of the film-forming jig 1, Cu is used for the sacrificial layer 2, and Cu—Zr—Ti of metal glass is used for the metal thin film body 3 as an amorphous metal thin film. Used. In this case, as the solution for the sacrificial layer 2, nitric acid, concentrated perchloric acid, a mixture of chromium oxide and sulfuric acid, concentrated potassium hydroxide, or the like can be used.

  As another example, stainless steel SUS304 can be used as the material of the film-forming jig 1, Al can be used for the sacrificial layer 2, and Cu—Zr—Ti of metal glass can be used for the metal thin film body 3. In this case, as a solution for the sacrificial layer 2, a mixture of chromium oxide and sulfuric acid, concentrated potassium hydroxide, or the like can be used.

  As still another example, stainless steel SUS304 can be used as the material of the film-forming jig 1, Si can be used for the sacrificial layer 2, and metal Ni, Fe, or Cr can be used for the metal thin film body 3. In this case, potassium hydroxide or the like can be used as a solution for the sacrificial layer 2.

  As still another example, stainless steel SUS304 can be used as the material of the film-forming jig 1, Ag can be used for the sacrificial layer 2, and metal Si can be used for the metal thin film body 3. In this case, as the solution for the sacrificial layer 2, nitric acid, concentrated perchloric acid, a mixture of chromium oxide and sulfuric acid, or the like can be used.

  As described above, an appropriate metal thin film body can be obtained by dissolving the sacrificial layer by appropriately selecting a solution depending on the material to be used. Moreover, since the metal thin film adhering to the film-forming jig 1 can be removed and cleaned by appropriately selecting a solution without adversely affecting the film-forming jig 1, the film-forming jig 1 can be used repeatedly. .

  As described above, the following operations are performed to efficiently manufacture a metal thin film body having a predetermined shape. That is, the sacrificial layer 2 is formed on the film-forming jig 1 having a concavo-convex pattern corresponding to the shape of the metal thin film to be obtained. Next, a metal thin film 3 is formed on the formed sacrificial layer 2. Further, the sacrificial layer 2 is at least partially removed from the laminate including the sacrificial layer 2 and the metal thin film 3 on the film forming jig 1, and the metal thin film 3 is physically separated from the film forming jig 1. In this way, as shown in FIG. 1 (e), the metal thin film 3 is selectively separated from the film forming jig 1. Thereby, the metal thin film 3 having a predetermined shape can be efficiently mass-produced by repeatedly using the film forming jig 1.

  Hereinafter, the film forming jig 1 will be described in more detail. FIG. 2 shows a cross-sectional shape of a laminate composed of the film-forming jig 1, the sacrificial layer 2, and the metal thin film 3 in FIG. Further, h represents the level difference between the concavo-convex pattern of the film forming jig 1, that is, the height difference between the convex portion and the concave portion. Here, the step h is preferably at least twice the film thickness of the metal thin film 3. In this case, as shown in FIG. 2, the metal thin film formed on the convex portion and the metal thin film formed on the concave portion can be more reliably divided. For this reason, the metal thin film body of the desired shape formed on a convex part or a recessed part can be easily isolate | separated from the part which does not comprise a desired shape among the metal thin films 3. FIG. Further, it is preferable that the metal thin film body having a desired shape is formed on the convex portion. In this case, in the step of removing the sacrificial layer 2, the etchant enters the sacrificial layer 2 from the step of the concavo-convex pattern. Is easier to remove. For this reason, the metal thin film body can be more easily separated from the film forming jig 1. When the metal thin film body having a desired shape is formed on the recess, the recess is preferably in contact with the peripheral edge of the film forming jig 1. In this case, since the etchant enters the sacrificial layer 2 from the peripheral edge and is side-etched, the sacrificial layer 2 can be removed more easily.

  According to the manufacturing method according to the present embodiment, metal thin film bodies of various shapes can be manufactured while suppressing peeling of the metal thin film during formation. For example, the metal thin film body shown in FIG. 1 (e) has a donut shape. When a metal mask is used as in the prior art, it is necessary to use an inner mask that covers the inside of the donut shape and an outer mask that covers the outside. However, since the inner mask and the outer mask cannot be connected and the relative positions of the inner mask and the outer mask cannot be fixed, it is difficult to manufacture a thin film body having a desired shape using a metal mask. there were. On the other hand, according to the manufacturing method which concerns on this embodiment, a donut-shaped metal thin film body can be produced accurately and simply. Thus, the manufacturing method according to the present embodiment is suitable for manufacturing a donut-shaped metal thin film body or a metal thin film body having holes.

[Embodiment 2]
FIG. 3 is a schematic diagram of a film forming jig used in the method for manufacturing a metal thin film body according to the second embodiment. The film forming jig used in Embodiment 2 includes a film forming member 4, a spacer member 5, and a pedestal 6. FIG. 4 shows the structures of the film forming member 4, the spacer member 5, and the pedestal 6. A sacrificial layer and a metal thin film are formed on the film forming member 4 as in the first embodiment, and a metal thin film body is obtained by removing the sacrificial layer. The spacer member 5 is a part different from the film forming member 4 and fills the gap between the film forming members 4. The pedestal 6 supports the film forming member 4 and the spacer member 5. The film forming member 4, the spacer member 5, and the pedestal 6 may be fixed to each other or removable from each other.

  When a sacrificial layer and a metal thin film are formed on the film forming jig shown in FIG. 3 as in the first embodiment, a metal thin film having a shape corresponding to the shape of the upper surface of the film forming member 4 is obtained. For this reason, a metal thin film having a shape corresponding to the shape of the upper surface of the film forming member 4 is obtained by removing the sacrificial layer as in the first embodiment.

  With reference to FIG. 20, the manufacturing method of the metal thin film body which concerns on Embodiment 2 is further demonstrated. FIG. 20A is a schematic cross-sectional view of the film forming member 4 and the spacer member 5. By depositing the sacrificial layer 2 and the metal thin film 3 as in the first embodiment, the structure shown in FIG. 20B is obtained. Here, the sacrificial layer 2 and the metal thin film 3 are formed by sputtering film formation. The presence of the spacer member 5 can prevent a film from being formed on the side surface of the film forming member 4. Next, as shown in FIG. 20C, the spacer member 5 is removed from the film forming member 4. Furthermore, as shown in FIG. 20D, the sacrificial layer 2 is removed using a treatment liquid 37 such as an acid solution or an alkaline solution, so that the metal thin film 3 is formed as shown in FIG. To be separated. As shown in FIG. 20C, by removing the spacer member 5 from the film forming member 4 before removing the sacrificial layer 2, the processing liquid 37 can easily enter the sacrificial layer 2. As shown in FIG. 20 (e), the separated metal thin film 3 may have protrusions such as burrs at the ends. However, since this burr is usually a very small and thin film, the burr can be removed by pressing a flat plate 38 such as a glass plate against the metal thin film 3. In this way, the metal thin film 3 as shown in FIG. 20 (f) can be obtained.

  The fact that the step between the upper surface of the spacer member 5 and the upper surface of the film forming member 4 is sufficiently large, for example, that the step is twice or more the film thickness of the metal thin film means that the metal thin film formed on the film forming member 4 It is preferable because the metal thin film formed on the spacer member 5 can be more reliably divided.

  In the film forming jig shown in FIG. 3, the upper surface of the film forming member 4 is higher than the upper surface of the spacer member 5. That is, the upper surface of the spacer member 5 constitutes a concave portion of the film forming jig, and the upper surface of the film forming member 4 constitutes a convex portion of the film forming jig. Such a configuration is preferable in that a layer having a uniform thickness can be easily formed when the sacrificial layer 2 and the metal thin film 3 are formed by sputtering. However, as shown in FIG. 5, the height of the spacer member 5 may be changed so that the upper surface of the film forming member 4 is higher than the upper surface of the spacer member 5. In this case, when the metal thin film is formed by sputtering, the incident angle of the metal component on the film forming member 4 is limited by the spacer member 5, so that the upper surface of the film forming member 4 depends on the distance from the spacer member 5. The film formation speed in the case changes. In particular, by adjusting the shape of the spacer member 5 and the level difference between the film forming member 4 and the spacer member 5, the film thickness distribution of the formed metal thin film can be controlled.

  Furthermore, as shown in FIG. 6, the height of the spacer member 5 can be changed so that the upper surface of the film forming member 4 is almost the same height as the upper surface of the spacer member 5. In this case, an organic film such as a resist can be easily formed by a spin coating method or the like. Such a configuration is advantageous when another film is laminated on the metal thin film.

  In each step of forming the metal thin film body or the structure including the metal thin film body, the positional relationship between the upper surface of the film forming member 4 and the upper surface of the spacer member 5 may be changed as described above. By replacing the spacer member 5 shown in FIGS. 4 to 6 with a different height, patterning utilizing a step between the film forming member 4 and the spacer member 5, and general photolithography and film forming are performed. It becomes easy to fuse the patterning used.

  FIG. 7 is a schematic view of a structure obtained by forming a wiring pattern on both the upper surface, the lower surface, and the upper and lower surfaces of the metal thin film body by such fusion. FIG. 7A shows the metal thin film 3 when no wiring pattern is provided. FIG. 7B shows a structure obtained by providing a wiring pattern on the upper surface of the metal thin film 3. The structure shown in FIG. 7B is obtained by forming the insulating layer 8 on the metal thin film 3 and further forming the wiring layer 7 on the insulating layer 8. Specifically, the structure shown in FIG. 7B is obtained by forming the sacrificial layer 2, the metal thin film 3, the insulating layer 8, and the wiring layer 7 on the film forming member 4 and removing the sacrificial layer 2. Can do. The method of forming the insulating layer 8 is arbitrary, but after the height of the spacer member 5 is changed so that the upper surface of the film forming member 4 is almost the same as the upper surface of the spacer member 5, the insulating layer 8 is insulated by photolithography. Formation of the layer 8 is preferable in terms of easy operation. Similarly, the wiring layer 7 can be formed by photolithography.

  FIG.7 (c) shows the structure obtained by providing a wiring pattern in the lower surface of a metal thin film. The structure shown in FIG. 7C can be manufactured by forming the sacrificial layer 2, the wiring layer 7, the insulating layer 8, and the metal thin film 3 on the film forming member 4 and removing the sacrificial layer 2. . In this case, the structure can be formed as follows. That is, the sacrificial layer 2, the wiring layer 7, and the insulating layer 8 can be formed on the film forming member 4 in a state where the upper surface of the film forming member 4 is substantially the same height as the upper surface of the spacer member 5. And after changing the height of the spacer member 5 so that a level | step difference may arise between the upper surface of the spacer member 5 and the upper surface of the film-forming member 4, the metal thin film 3 can be formed. As described above, in the present embodiment, the metal thin film 3 may be formed directly on the sacrificial layer 2, or the metal thin film 3 may be formed on the sacrificial layer 2 via other layers (for example, the wiring layer 7 and the insulating layer 8). May be formed.

  FIG. 7D shows a structure obtained by providing wiring patterns on the upper and lower surfaces of the metal thin film. The structure shown in FIG. 7D has a sacrificial layer 2, a wiring layer 7, an insulating layer 8, a metal thin film 3, an insulating layer on the film forming member 4 as in the case of FIGS. 7B and 7C. 8 and the wiring layer 7 can be formed, and the sacrificial layer 2 can be removed.

  Although FIG. 7 shows a structure obtained by providing a set of wiring layers 7 and insulating layers 8 on a metal thin film, the provided wiring layers and insulating layers are not limited to one layer, and two or more wiring layers are provided. In addition, an insulating layer may be provided. Further, other layers may be laminated on the metal thin film.

  As described in the third embodiment with reference to FIG. 8, the metal thin film 3 can be a rocking element including a rocking part that can rock. An example of an oscillating element manufactured according to the present embodiment (hereinafter referred to as an oscillating element according to the present embodiment) includes a beam portion 10 and an oscillating portion (light is supported) supported by the beam portion 10 so as to be oscillatable. A mirror unit 9) having a reflecting mirror surface is provided.

  In the oscillating element according to the present embodiment, the cross-sectional shape of the beam portion and the cross-sectional shape of the oscillating portion have common shape characteristics. Therefore, the oscillating element can be easily miniaturized, the dimensional stability can be improved, or the performance such as the stable driving performance can be improved. Here, “having a common shape feature” means that a pair of corners (edge portions) facing in the thickness direction in the cross section of the beam portion and a thickness direction in the cross section of the oscillating portion It shows that a pair of corner | angular part (edge part) to have has a substantially equivalent shape. The cross section of the beam portion and the cross section of the swinging portion refer to a cross section perpendicular to the metal thin film surface of the beam portion and the swinging portion.

  For example, the cross section perpendicular to the oscillating element surface of the beam part and the oscillating part has a rectangular shape (square or rectangular) as shown in FIG. That is, a pair of corner portions (edge portions) that face each other in the thickness direction in the cross section of the beam portion and a pair of corner portions (edge portions) that face each other in the thickness direction in the cross section of the oscillating portion are both substantially perpendicular shapes. Have The cross section of the beam part and the rocking part has a rectangular shape because the angle between the rocking element surface (the upper surface or the lower surface of the beam part or the rocking part) and the side surface (edge surface) of the beam part or the rocking part. Means substantially perpendicular. In one embodiment, an angle between 75 ° and 105 ° can be referred to as a substantially right angle.

  The cross sections of the beam portion and the oscillating portion may have the same rectangular shape, but the cross-sectional area of the beam portion is often smaller than that of the oscillating portion. Thus, even when the width dimension of the beam portion is smaller than that of the oscillating portion (for example, when the width dimension of the beam portion and the oscillating portion is different), in the oscillating element according to the present embodiment, The shape of the pair of corner portions in the beam portion and the shape of the pair of corner portions in the swinging portion are substantially the same. That is, even if the shapes of the beam portion and the swinging portion are structurally different, the beam portion and the swinging portion have a characteristic common rectangular cross-sectional shape. For this reason, for example, it is possible to perform uniform and highly accurate fine processing on the surfaces of the beam portion and the swinging portion, and it is possible to add an electric circuit or the like with high accuracy. As the structure of the beam portion and the swinging portion is made finer, this effect becomes more advantageous.

  On the other hand, when a structure is manufactured using a conventionally used sputtering film formation or lift-off method, the film thickness is not constant and the cross section is not rectangular. This will be described with reference to the schematic diagrams of FIGS. 27A and 27C showing the sputtering film formation and the lift-off method, respectively. The sputtered particles 45 are incident from various directions at the center of the opening of the mask 43 or the resist 44, while the sputtered particles 45 are incident only from a limited direction at the end of the opening of the mask 43 or the resist 44. That is, the thickness of the structure 42 formed in the opening of the mask 43 or the resist 44 is thicker in the center portion, but becomes thinner toward the end portion, so that the cross section of the structure has a curved shape. FIGS. 27B and 27D are schematic views of the structure obtained by the sputtering film formation and the lift-off method.

  This is different from the case where the structure is manufactured using a film forming jig in which the upper surface of the film forming member is higher than the upper surface of the spacer member as in this embodiment. That is, in the case of the present embodiment, as shown in the schematic diagram of FIG. 27E, the incidence of the sputtered particles 45 on the film forming member is not hindered by the film forming jig 46. Therefore, in the case of the present embodiment, a uniform film thickness and a rectangular cross-sectional shape are obtained as shown in FIG. 27 (f), which is a schematic diagram of the structure 42 obtained in the present embodiment.

  Thus, the cross-sectional shape of the structure manufactured using the conventional sputter deposition or lift-off method depends on the shape of the opening of the mask. This is a design limitation in producing a structure having a desired shape. In addition, since the film thickness of the structure is not uniform, it is difficult to perform uniform and highly accurate microfabrication on the surface of the structure, and it is also difficult to add an electric circuit or the like with high accuracy. Become. As described above, when the conventional film formation process is used, the subsequent processing becomes more difficult as the structure becomes finer.

  Further, in the oscillating element according to the present embodiment, the beam portion and the oscillating portion are constituted by a metal thin film body having substantially the same film thickness. Such an oscillating element can be manufactured using a thin film formation process, and is advantageous in terms of miniaturization as compared with an oscillating element manufactured from a silicon substrate or the like. In addition, since the oscillating element according to the present embodiment has characteristics specific to metal, the performance as an oscillating element such as impact resistance can be improved.

  The oscillating element according to the present embodiment includes a pair of corner portions facing each other in a direction perpendicular to the thickness direction of the beam portion in the cross section of the beam portion, It is advantageous that the shape of the pair of corners opposed in the orthogonal direction has substantially the same shape. In this case, since the variation in the shape of the beam portion and the swinging portion is small, stable driveability and the like can be further improved.

  As described above, a thin film formation process can be used when the beam portion and the swinging portion of the swing element according to the present embodiment are formed of the metal thin film body. That is, the beam portion and the swinging portion can be formed by an integral metal thin film body. Thereby, it becomes unnecessary to join a beam part and a rocking | swiveling part. Moreover, high durability is realizable by integrally forming a beam part and a rocking | swiveling part.

  In the oscillating device according to the present embodiment, the beam portion and the oscillating portion are preferably formed of a metal thin film body made of metal glass. The beam part and the rocking | fluctuation part which consist of metal glass have the physical property which combined the favorable fatigue limit and the low Young's modulus. Metallic glass is an amorphous alloy that exhibits a glass transition, has a wide elastic region in which plastic-derived plastic deformation is unlikely to occur. Metallic glass has characteristics such as high strength, high fatigue characteristics, high corrosion resistance, and low Young's modulus compared to general alloys.

(Example of Embodiment 2)
According to the method for manufacturing a metal thin film body according to the second embodiment, an ultra-thick film structure of thin film metal glass was manufactured as a metal thin film body. FIG. 21A shows the film forming member 4 used in this example. FIG. 21B shows the spacer member 5 used in this example. The film forming member 4 is made of stainless steel, and the upper surface is a flat surface on which the sacrificial layer 2 and the metal thin film 3 are formed. The film forming member 4 is provided with a vertical through hole so that the shape of the flat surface corresponds to the shape of the metal thin film body to be obtained. By inserting the spacer member 5 into the through hole from the lower surface of the film forming member 4 and fixing with a screw, the film forming jig shown in FIG. 21C was obtained. FIG.21 (d) is an enlarged view of the film-forming jig shown in FIG.21 (c). The upper surface of the spacer member 5 was about 0.4 mm lower than the upper surface of the film forming member 4.

In this example, Cu—Zr—Ti metal glass, which is a Cu-based thin film metal glass, was used as the material of the metal thin film 3. Cu-Zr-Ti metallic glass has high strength, high fatigue properties, and low cost raw materials. Here, an alloy target was manufactured by arc melting using each constituent element of Cu, Zr, and Ti, and a Cu—Zr—Ti metallic glass thin film was formed by sputtering film formation using this alloy target. When Cu-Zr-Ti metallic glass formed by this method was subjected to a tensile test at room temperature using a thermomechanical testing machine (Rigaku, TA-60), the longitudinal elastic modulus E = 62.3 GPa and the tensile strength σ = 0. It was 9 GPa. Moreover, it was confirmed by EDX (Shimadzu Corporation, μEDX-1200) that the composition of the Cu—Zr—Ti metallic glass was Cu ₆₄ Zr ₂₈ Ti ₈ . Furthermore, it was confirmed by DSC (ULVAC, DSC9400) that the glass transition point Tg of this Cu—Zr—Ti metallic glass was 734 K and the crystallization temperature Tx was 768.

  A sacrificial layer 2 (Cu) is formed by sputtering on the upper surface of the film forming jig shown in FIG. A film was formed. Then, the spacer member 5 was separated from the film forming member 4. The film forming member 4 after the spacer member 5 is separated is shown in FIG.

  FIG. 23 shows a cross-sectional shape of the structure shown in FIG. 22 measured by a scanning white interferometer (New view 5032, Zygo). FIG. 23A shows a cross-sectional shape of A-A ′ in FIG. 22. FIG. 23B shows a cross-sectional shape of B-B ′ in FIG. Although each has a different width, it has a uniform film thickness and a rectangular shape. 23 (c) and 23 (d) are enlarged views of FIGS. 23 (a) and 23 (b), respectively.

  Next, the sacrificial layer 2 (Cu) was removed by immersing the film forming member 4 in nitric acid (30 wt%) for 12 hours. And the burr | flash which generate | occur | produced in the edge part of a metal thin film body was removed by pressing a glass plate. Thus, a thin film metal glass Cu—Zr—Ti ultra-thick film structure, which is a metal thin film body, was completed.

  FIG. 24 shows the obtained thin-film metallic glass Cu—Zr—Ti ultra-thick film structure. FIG. 24A shows the sputter film formation surface side (front side) of the obtained metal thin film body, and FIG. 24B shows the film formation member 4 side (back side) of the obtained metal thin film body. FIG. 24C shows an enlarged view of the region C in FIG. Furthermore, the surface shape of D-D ′ in FIG. 24C measured by a stylus type surface shape measuring instrument (ULVAC, Dektak 150) is shown in FIG. D-D ′ in FIG. 24C indicates an end portion of the metal thin film body. As shown in FIG. 24D, the obtained metal thin film has burrs having a width of 22.8 μm and a height of 7.4 μm on the back side. However, even when compared with the minimum cross section of the metal thin film (rectangular shape with a width of 0.2 mm and a thickness of 30 μm), the size of the burr is about 1.4% of the cross section, which is very slight. . Thus, the thin film metal glass Cu-Zr-Ti super-thick film structure having a uniform film thickness and a good rectangular shape was successfully manufactured.

(Comparative Example 1)
For comparison with the example of the second embodiment, as shown in FIG. 27A, a metal thin film pattern was formed using a metal mask according to the prior art. Specifically, a metal mask 43 having a thickness of 50 μm was placed on the Si substrate 41, and the substrate 41 and the metal mask 43 were fixed to the cooling plate of the sputter deposition apparatus via screws. Then, a titanium (Ti) adhesion layer with a film thickness of 100 nm, a thin metal glass Cu—Zr—Ti layer, and a gold (Au) antioxidant film with a film pressure of 200 nm were sequentially formed on the Si substrate 41 by sputtering film formation. . Thereafter, the metal mask was removed to complete the thin-film metal glass Cu—Zr—Ti thick film structure 42 formed on the Si substrate.

  In this comparative example, a double metal mask was used. The reason why the metal mask is doubled is that the film is deposited on the upper metal mask by sputtering film formation, and the lower metal mask is kept in close contact with the substrate even if the upper metal mask is deformed due to film stress. Because. Therefore, the film can be deposited while maintaining the cross-sectional shape of the film structure formed on the Si substrate. As a material for the metal mask, stainless steel (SUS304) was used in consideration of high rigidity, workability, and availability.

  FIG. 27B is a schematic diagram of a thick film pattern formed using a metal mask. FIG. 25A shows a cross-sectional shape of a thick film pattern having a width of 1.0 mm formed using a metal mask, which was measured using a scanning white interferometer as in the example. This width corresponds to the width of A-A 'in FIG. The left and right end portions of the flat portion visible in the center of the graph are connected to the side surface with a slightly larger radius of curvature, and the shoulder portion is bent, that is, has an oblique shape. Compared with the cross-sectional shape in the embodiment shown in FIG. 23A, the width of the flat portion is narrow, and the left and right side surfaces are not vertical but inclined.

  FIG. 25B shows a cross-sectional shape of a thick film pattern having a width of 0.2 mm formed using a metal mask, which was measured using a scanning white interferometer as in the example. This width corresponds to the width of B-B 'in FIG. As shown in FIG. 25B, there is no portion that can be called a flat portion, and the cross section has a contour that smoothly connects both side surfaces. Both side surfaces are also inclined as in the case of 1.0 mm width. Further, in the 1.0 mm width portion, the film thickness in the portion with the largest film thickness is 47 μm, while in the 0.2 mm width portion, the film thickness in the portion with the largest film thickness is 38 μm. Thus, comparing FIG. 25 (a) with FIG. 25 (b), the 1.0 mm wide portion and the 0.2 mm wide portion are formed simultaneously on the same substrate. It can be seen that the film thickness is different.

(Comparative Example 2)
For comparison with the example of the second embodiment, as shown in FIG. 27C, a metal thin film pattern was formed by lift-off using a resist according to the conventional technique. Specifically, a 100 nm chromium (Cr) film (not shown) was formed on the Si substrate 41 by sputtering to improve adhesion. Then, a photoresist 44 (KMPR1035, manufactured by Nippon Kayaku Co., Ltd.) was deposited on the chromium film by a photolithography technique so as to have a thickness of 100 μm to form an opening. Then, a titanium (Ti) adhesion layer having a thickness of 100 nm, a thin metal glass Cu—Zr—Ti layer, and a gold (Au) antioxidant film having a film pressure of 200 nm were sequentially formed by sputtering. During sputter deposition, the sample was fixed to a water-cooled cooling plate in order to suppress the temperature rise of the sample. Then, KMPR1035 and the chromium (Cr) adhesion layer were removed by using Remover PG, Remover K, and Neutralizer K (manufactured by Nippon Kayaku Co., Ltd.). In this way, lift-off was performed to complete the thin film metal glass Cu—Zr—Ti thick film structure 42. Note that a gold (Au) antioxidant film was used because the stripper (Neutralizer K) used for stripping corrodes the surface of the Cu—Zr—Ti layer.

  FIG. 27D is a schematic diagram of a thick film structure formed using lift-off. FIGS. 26 (a) and 26 (b) are cross-sectional shapes of thick film structures having a width of 1.0 mm and a width of 0.2 mm formed using lift-off, as measured using a scanning white interferometer in the same manner as in the examples. Represents. Compared to the cross-sectional shape in the embodiment shown in FIGS. 23A and 23B, the flat portion is less and the curvature connecting the flat portion and the side surface is larger. In addition, when (a) and (b) in FIG. 26 are compared, there is a difference in film thickness at the thickest part.

  As described above, the structure manufactured in accordance with the present embodiment has a substantially identical film thickness regardless of the width, and is a good outline compared to the structure manufactured using the conventional metal mask or resist lift-off. It can be seen that it has a rectangular cross section.

[Embodiment 3]
A method for manufacturing an optical scanning device using the film forming jig and the film forming method according to the second embodiment will be described below. FIG. 8 shows an optical scanning device according to the third embodiment. The optical scanning device according to the third embodiment includes a metal glass thin film including a swingable mirror portion formed by the film forming method according to the second embodiment, and a light projection unit that projects light onto the mirror portion. Prepare. 8A is a perspective view of the optical scanning device, and FIG. 8B is a perspective view from the back side of FIG. 8A. FIG. 8C is a cross-sectional view taken along line AA ′ of FIG.

  The mirror part 9, the beam part 10, and the fixing part 11 are integrally formed as a thin film of metal glass 12 (Cu—Zr—Ti). A magnet 14 is fixed to the back of the mirror portion 9 with an adhesive 13. When the magnet 14 swings in response to the alternating magnetic field from the electromagnetic coil 15, the mirror unit 9 moves. Thus, the mirror part 9, the beam part 10, the fixed part 11, the magnet 14, and the electromagnetic coil 15 function as an actuator device. A laser 16 is projected from the laser oscillator 17 onto the mirror unit 9. Since the mirror unit 9 reflects the laser 16, the object can be scanned with the reflected laser 16 according to the movement of the mirror unit 9.

  A method of manufacturing the optical scanning device shown in FIG. 8 will be specifically described with reference to FIG. First, the film forming member 4 shown in FIG. 9A is prepared. In the present embodiment, SUS304 is selected as the material of the film forming member 4 in consideration of corrosion resistance. Next, as shown in FIG. 9B, a sacrificial layer 30 is formed on the surface of the film forming member 4 by sputtering film formation. In the present embodiment, copper (Cu) is used as the material of the sacrificial layer 30.

  Next, as shown in FIG. 9C, the spacer member 5 is inserted into the film forming member 4 and the pedestal 6 is attached. The structure obtained by attachment is shown in FIG. Thereafter, as shown in FIG. 9E, a metallic glass 12 (Cu—Zr—Ti) is formed by sputtering. Then, when the sacrificial layer 30 is removed with nitric acid, a thin film of metallic glass 12 (Cu—Zr—Ti) shown in FIG. 9F is obtained. An optical scanning device shown in FIG. 8A is obtained by fixing a magnet 14 with an adhesive 13 and installing an electromagnetic coil 15 and a laser oscillator 17 at the center of the thin film mirror.

  The cross-sectional shape of the metallic glass thin film used for the optical scanning device shown in FIG. 8 will be described. FIG. 10A is a top view of the structure shown in FIG. FIG. 10B is a cross-sectional view taken along the line B-B ′ of FIG. 10A, and FIG. 10C is a cross-sectional view taken along the line C-C ′ of FIG. B-B 'is a cross section crossing the mirror part 9 of the metallic glass thin film, and C-C' is a cross section crossing the beam part 10 of the metallic glass thin film. As shown in FIGS. 10B and 10C, the metal glass thin film has curved surfaces at the mirror portion 9 and the beam portion 10. That is, the mirror part 9 and the beam part 10 have an R shape. The film thickness at the beam portion 10 is smaller than the film thickness at the mirror portion 9.

  In the present embodiment, in sputter film formation, a high voltage is applied between the film formation member 4 and the film formation target (material of the metal glass 12) while introducing an inert gas (mainly argon gas) into the vacuum. Is done. More specifically, ionized argon atoms collide with the film formation target, and the repelled target material is deposited on the film formation member 4 as neutral particles.

  At this time, the neutral particles collide with the film forming member 4 at various angles. Here, when the spacer member 32 shown in FIG. 11 is used, the number of neutral particles 33 that enter the opening 18 is limited (that is, the probability of entering decreases), and the entry angle of the neutral particles 33 is also limited. It is done. More specifically, while the number of neutral particles 33 deposited at the center of the opening 18 is larger, the number of neutral particles 33 deposited at the end of the opening 18 is smaller. For this reason, a thin film having an R shape is obtained on the film forming member 34.

  11B and 11C, the metal glass 12 is deposited on the film forming member 4 while the entry angle is regulated by the opening 18 formed by the spacer member 5. Therefore, the metal glass thin film formed on the film forming member 4 in the opening 18 becomes thinner as it is closer to the spacer member 5 and becomes thicker as it is closer to the center. Further, the thickness of the metal glass thin film formed on the film forming member 4 in the opening 18 depends on the width of the opening 18 and the height of the spacer member 5. Specifically, as the width of the opening 18 is narrower, the metal glass 12 is less likely to reach the film forming member 4, so that the formed metal glass thin film becomes thinner. As a result, the film thickness at the beam portion 10 is smaller than the film thickness at the mirror portion 9.

  Further, as the height 35 of the spacer member, that is, the distance between the surface of the film forming member 4 and the surface of the spacer member 5 is increased, the metal glass 12 is less likely to reach the film forming member 4. The glass film becomes thinner.

  Even if the width of the opening 18 changes, if the aspect ratio of the opening 18 (the height 35 of the spacer member / the width of the opening 18) is the same, a metal thin film having a similar thickness can be obtained. This is because when the aspect ratio is constant, the incident angle range of the metal glass 12 deposited at the center of the opening 18 is the same. Here, when the opening 18 has a stepped shape, the largest one among (the height from the film forming member 4 / the width of the opening 18) for each point of the spacer member 5 facing the opening 18. Is the aspect ratio of the opening 18.

  As described above, according to the method of this embodiment, the height of the spacer member 5 is adjusted according to the width of the thin film to be formed. Specifically, in order to form a thinner thin film, the spacer member 5 is used. By making it higher, a metal thin film having a desired thickness can be obtained. In this way, the shape of the beam part and the mirror part that determine the performance of the optical scanning device can be intentionally changed.

  An example of a method for controlling the thickness of the metal glass thin film will be described below. FIG. 12A shows a configuration of the film forming jig in which the aspect ratio of the opening of the spacer member 5 is adjusted so that the thickness of the metal glass thin film is equal between the mirror portion 9 and the beam portion 10. The difference from the film-forming jig shown in FIG. 9D is that the spacer member 5 has a step around the beam portion 10. Thus, by providing the notch in the spacer member 5, the aspect ratio of the opening 18 around the beam portion 10 can be reduced.

  When the metal glass 12 (Cu—Zr—Ti) is formed on the film forming jig shown in FIG. 12A, the state shown in FIG. 12B is obtained. A front view of the structure shown in FIG. 12B is shown in FIG. FIG. 12D is a cross-sectional view taken along the line D-D ′ in FIG. 12C, and FIG. 12E is a cross-sectional view taken along the line E-E ′ in FIG. D-D 'is a cross section that crosses the mirror part 9 of the metal glass thin film, and E-E' is a cross section that crosses the beam part 10 of the metal glass thin film.

  As shown in FIG. 12E, the spacer member 5 has a cut. For this reason, the aspect ratio of the opening 18 shown in FIG. 12 (e) is smaller than the aspect ratio of the opening 18 shown in FIG. 10 (c), and is equivalent to the aspect ratio of the opening 18 shown in FIG. 12 (d). It is. By using such a film forming jig, the film thickness of the beam portion 10 becomes equal to the film thickness of the mirror portion 9.

  However, even if the aspect ratio of the opening is the same, a slight error may occur in the film thickness due to the sputter film formation conditions or the influence from other parts of the spacer member. In this case, the height of the spacer member 5 may be adjusted to increase or decrease the film thickness.

[Embodiment 4]
A method for manufacturing an optical scanning device using the film forming jig and the film forming method according to the second embodiment will be described below. 13 and 14 show an optical scanning device according to the fourth embodiment. FIG. 13A is a perspective view of an optical scanning device, and this optical scanning device includes an element, an AC power supply 19, two magnets 14, and a laser oscillator 17. The element includes a mirror part 9, an outer beam part 20, an inner beam part 21, a fixing part 11, and a gimbal part 22. The element is fixed to a support (not shown) through a fixing portion 11, and the two magnets 14 are fixed so as to sandwich the element so that the S pole and the N pole face each other.

  A driving method of the optical scanning device according to the fourth embodiment will be described in detail. In the optical scanning device according to the fourth embodiment, the laser 16 irradiated from the laser oscillator 17 performs optical scanning in two directions by swinging the mirror unit 9 in the θ direction and the φ direction.

  FIG.13 (b) is a figure which shows the back side of the element shown by Fig.13 (a). FIG. 14C is a diagram showing a layer structure of the element shown in FIG. As shown in FIG. 14C, the element includes a base material 24, an insulating layer 23, and a coil pattern 25 in this order. The base material 24 is located on a surface close to the laser oscillator 17, and the coil pattern 25 is located on a surface far from the laser oscillator 17.

  The coil pattern 25 includes a coil formed on the gimbal portion 22 and a coil formed on the mirror portion 9. An electrode 26 is connected to one end of the circuit constituting the coil pattern 25. Further, one end of a circuit constituting the coil pattern 25 is connected to the base material 24 through a through hole 36 of the insulating layer 23 located in the mirror portion 9. That is, the electrode 26 and the base material 24 are electrically connected via the coil pattern 25.

  The electrode 26 is fixed to the fixed portion 11. An AC power source 19 is connected between the electrode 26 and the base material 24. An AC magnetic field is generated in the coil by applying an AC current to the coil pattern using the AC power source 19.

  The coil pattern 25 includes one of the outer beam portions 20 (the left outer beam portion 20 in FIG. 14C) and one of the inner beam portions 21 (the lower inner beam portion 21 in FIG. 14C). And pass through. In the present embodiment, the other of the outer beam portions 20 (the right outer beam portion 20 in FIG. 14C) and the other of the inner beam portions 21 (the upper inner beam portion 21 in FIG. 14C). Are arranged with a dummy coil pattern through which no current flows. When the coil pattern is present only on one of the beam portions, the stress generated during driving is different in each beam portion, so that unintended vibration of the mirror portion 9 may occur. By using a dummy coil pattern as in this embodiment, such unintentional vibration of the mirror unit 9 can be prevented.

  The AC power source 19 can apply an AC current having a first frequency and a second frequency. Specifically, a current obtained by superimposing a current having a first frequency at which the mirror unit 9 resonates in the θ direction and a current having a second frequency at which the mirror unit 9 resonates in the φ direction is used as an AC power source. 19 is applied. Such a frequency can be determined by examining in advance a vibration mode and a resonance frequency in which the mirror unit 9 resonates in the θ direction or the φ direction. By using such an alternating current, the Lorentz force generated in the coil pattern of the gimbal portion 22 is amplified so that the mirror portion 9 swings in the φ direction due to the resonance motion. Swing. Further, since the Lorentz force generated in the coil pattern of the mirror unit 9 is amplified so that the mirror unit 9 swings in the θ direction by the resonance motion, the mirror unit 9 swings in the θ direction. In the present embodiment, two magnets 14 are arranged as shown in FIG. 13B so that Lorentz force is generated in both the θ direction and the φ direction for the two resonance vibrations. However, an external magnetic field (a set of magnets) may be set in accordance with the driving in the θ direction and the φ direction.

  FIG. 14D is a cross-sectional view taken along the line F-F ′ in FIG. The film structure of the element will be described with reference to FIG. The element consists of a metal glass (Cu—Zr—Ti) 12 film as a base material 24, an adhesion layer (Cr) 27, an insulating layer (PerMX3020 (28, manufactured by DuPont MRC)) 23, a coil pattern 25, Have a laminated structure. The coil pattern 25 has a structure in which an adhesion layer (Cr) 27 and a conductive layer (Au) 29 are laminated. The surface of the metallic glass (Cu—Zr—Ti) 12 becomes a reflecting surface that reflects the laser 16.

  A method for manufacturing the element shown in FIGS. 13 and 14 according to the present embodiment will be described with reference to FIGS. FIG. 15A shows a film forming jig used for manufacturing an element. FIG. 15B shows an exploded view of the film forming jig shown in FIG. The film forming jig used in this embodiment includes a film forming member 4, a spacer member 5, and a pedestal 6. In a state where the film forming member 4, the spacer member 5, and the pedestal 6 are combined, the upper surface of the spacer member 5 is lower than the upper surface of the film forming member 4. An element is formed on the upper surface of the film forming member 4. In this embodiment, SUS304 to which corrosion resistance and specularity are imparted is used as the material for the film forming member 4, the spacer member 5, and the pedestal 6.

  With reference to FIGS. 16-19, the manufacturing method of the element which concerns on this embodiment is demonstrated. FIG. 16A is a perspective view of the film forming jig shown in FIG. 15 and a cross-sectional view taken along the line G-G ′ of the perspective view. 16 (b), 17 (c) (d), 18 (e) (f), and 19 (g) are a perspective view of a film-forming jig in each manufacturing process, and G- It is sectional drawing in G '.

  First, as shown in FIG. 16B, a film of a sacrificial layer (Cu) 30 and a metal glass (Cu—Zr—Ti) 12 as a base material 24 is formed on the film forming jigs 4, 5, and 6. And an adhesion layer (Cr) 27 are sequentially formed. Specifically, these layers can be formed by sputtering film formation.

  Next, as shown in FIG. 17C, the insulating layer 23 is formed on the adhesion layer (Cr) 27. Specifically, the insulating layer 23 can be formed by a general photolithography process (exposure, development, and baking). As a material of the insulating layer 23, a film resist (PerMX3020 (28, manufactured by DuPont MRC)) can be used. As shown in FIG. 17C, the insulating layer 23 is formed so as to have a through hole at the center of the mirror portion 9.

  Next, the coil pattern 25 is formed on the insulating layer 23. A general photolithography process can be used to form the coil pattern. That is, first, as shown in FIG. 17D, a mask pattern is formed using a photolithographic process in the same manner as the insulating layer 23 using CM125 (31, manufactured by DuPont MRC) as a mask material. Next, as shown in FIG. 18E, an adhesion layer (Cr) 27 and a conductive layer (Au) 29 are formed by sputtering or the like. Then, by removing the CM 125 (31), the coil pattern 25 is formed as shown in FIG.

  Then, the element shown in FIG. 19G is obtained by removing the sacrificial layer (Cu) 30 using 20 wt% nitric acid.

  The element fixing portion 11 is fixed to a support (not shown) with a jig, the AC power source 19 is connected to the electrode 26 and the base material 24, the magnet 14 is fixed to the support (not shown), and the laser oscillator 17 is By installing, the optical scanning device according to the present embodiment is obtained.

DESCRIPTION OF SYMBOLS 1 Film-forming jig 2 Sacrificial layer 3 Metal thin film 4 Film-forming member 5 Spacer member 6 Base 7 Wiring layer 8 Insulating layer 9 Mirror part 10 Beam part 11 Fixing part 12 Metal glass (Cu-Zr-Ti)
DESCRIPTION OF SYMBOLS 13 Adhesive 14 Magnet 15 Electromagnetic coil 16 Laser 17 Laser oscillator 18 Opening part 19 AC power supply 20 Outer beam part 21 Inner beam part 22 Gimbal part 23 Insulating layer 24 Base material 25 Coil pattern 26 Electrode 27 Adhesion layer (Cr)
28 PerMX3020
29 Conductive layer (Au)
30 Sacrificial layer (Cu)
31 CM125
32 Spacer member 33 Neutral particle 34 Film forming member 35 Spacer member height 36 Through hole 37 Treatment liquid 38 Flat plate 41 Substrate 42 Structure 43 Metal mask 44 Resist 45 Sputtered particle 46 Film forming jig

Claims (11)

A beam portion, and a swinging portion supported so as to be swingable by being connected to the fixed portion via the beam portion,
The beam portion and the swinging portion are formed of a metal thin film body having substantially the same film thickness and formed of metal glass, and are cross sections perpendicular to the metal thin film surface of the metal thin film body. And a cross section perpendicular to the metal thin film surface of the metal thin film body, and a pair of corners facing in the thickness direction at both ends of the cross section in the width direction of the beam portion, and A pair of corners facing each other in the thickness direction on the both ends of the cross section of the oscillating portion in the same direction as the width direction or in a direction perpendicular to the width direction of the beam portion has an equivalent shape. Oscillating element.   A shape of a pair of corners facing each other in a direction perpendicular to the thickness direction of the beam portion in a cross section perpendicular to the metal thin film surface of the metal thin film body and in the width direction of the beam portion, , In a cross section perpendicular to the metal thin film surface of the metal thin film body and in the same direction as the width direction of the beam portion or in a direction perpendicular to the width direction of the beam portion, 2. The oscillating device according to claim 1, wherein a shape of a pair of corner portions facing each other in a direction orthogonal to the thickness direction of the oscillating portion is an equivalent shape.   A cross section perpendicular to the metal thin film surface of the beam portion and in the width direction of the beam portion; and a cross section perpendicular to the metal thin film surface of the swing portion and in the same direction as the width direction of the beam portion or The oscillating device according to claim 1 or 2, wherein the cross section in a direction perpendicular to the width direction of the beam portion has a rectangular shape.   4. The oscillating element according to claim 1, wherein a width dimension of the beam portion is different from a width dimension of the oscillating portion. 5.   5. The oscillating device according to claim 1, wherein the beam portion and the oscillating portion are formed of an integral metal thin film body. 6.   The oscillating element according to claim 1, wherein the oscillating part is a mirror part having a mirror surface. The oscillating portion has a mirror portion having a mirror surface, and a gimbal portion provided so as to surround the mirror portion,
The beam part includes an inner beam part that connects the mirror part and the gimbal part, and an outer beam part that connects the fixed part provided on the outside of the gimbal part and the gimbal part. The oscillating device according to any one of claims 1 to 5.   The wiring pattern is provided on the back side of the mirror surface of the swinging part and the beam part from the mirror part to the gimbal part via the inner beam part. The oscillating element described.   9. The oscillating device according to claim 1, wherein projecting portions projecting in a thickness direction are provided at end portions of the beam portion and the oscillating portion. 10.   An actuator device comprising the oscillating device according to claim 1.   An optical scanning device comprising the oscillating device according to claim 1.